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Academic literature on the topic 'Ultra-violet (UV) photodetectors'
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Journal articles on the topic "Ultra-violet (UV) photodetectors"
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Jacob, Anju Anna, L. Balakrishnan, S. R. Meher, K. Shambavi, and Z. C. Alex. "Synthesis of Zn1−xCdxO Nanoparticles by Co-Precipitation: Structural, Optical and Photodetection Analysis." International Journal of Nanoscience 17, no. 01n02 (2017): 1760015. http://dx.doi.org/10.1142/s0219581x17600158.
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Zinc oxide (ZnO) is a wide bandgap semiconductor with excellent photoresponse in ultra-violet (UV) regime. Tuning the bandgap of ZnO by alloying with cadmium can shift its absorption cutoff wavelength from UV to visible (Vis) region. Our work aims at synthesis of Zn[Formula: see text]CdxO nanoparticles by co-precipitation method for the fabrication of photodetector. The properties of nanoparticles were analyzed using X-ray diffractometer, UV–Vis spectrometer, scanning electron microscope and energy dispersive spectrometer. The incorporation of cadmium without altering the wurtzite structure resulted in the red shift in the absorption edge of ZnO. Further, the photoresponse characteristics of Zn[Formula: see text]CdxO nanopowders were investigated by fabricating photodetectors. It has been found that with Cd alloying the photosensitivity was increased in the UVA-violet as well in the blue region.
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Ying, Haoting, Xin Li, Yutong Wu, et al. "High-performance ultra-violet phototransistors based on CVT-grown high quality SnS2flakes." Nanoscale Advances 1, no. 10 (2019): 3973–79. http://dx.doi.org/10.1039/c9na00471h.
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De Souza, Michelly, Olivier Bulteel, Denis Flandre, and Marcelo Antonio Pavanello. "Temperature and Silicon Film Thickness Influence on the Operation of Lateral SOI PIN Photodiodes for Detection of Short Wavelengths." Journal of Integrated Circuits and Systems 6, no. 2 (2011): 107–13. http://dx.doi.org/10.29292/jics.v6i2.346.
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This work presents an analysis of the temperature influence on the performance of a lateral thin-film SOI PIN photodiodes when illuminated by low wavelengths, in the range of blue and ultra-violet (UV). Experimental measurements performed from 100K to 400K showed that the optical responsitivity of SOI PIN photodetectors is affected by temperature change, being reduced at low and moderately high temperatures. Two-dimensional numerical simulations showed the same trends as in the experimental results, and were used both to investigate the physical phenomena responsible for the observed behavior as a function of the temperature as well as to predict the influence of silicon film thickness downscaling on the photodetector performance.
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Lee, Youngmin, Soo Youn Kim, Deuk Young Kim та Sejoon Lee. "Highly Sensitive UV Photodiode Composed of β-Polyfluorene/YZnO Nanorod Organic-Inorganic Hybrid Heterostructure". Nanomaterials 10, № 8 (2020): 1486. http://dx.doi.org/10.3390/nano10081486.
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The highly sensitive ultra-violet (UV) photodiode was demonstrated on the organic-inorganic hybrid heterostructure of β-phase p-type polyfluorene (PFO)/n-type yttrium-doped zinc oxide nanorods (YZO-NRs). The device was fabricated through a simple fabrication technique of β-phase PFO coating onto YZO-NRs that had been directly grown on graphene by the hydrothermal synthesis method. Under UV illumination (λ = 365 nm), the device clearly showed excellent photoresponse characteristics (e.g., high quantum efficiency ~690%, high photodetectivity ~3.34 × 1012 cm·Hz1/2·W−1, and fast response time ~0.17 s). Furthermore, the ratio of the photo current-to-dark current exceeds 103 even under UV illumination with a small optical power density of 0.6 mW/cm2. We attribute such superb photoresponse characteristics to both Y incorporation into YZO-NRs and conformation of β-phase PFO. Namely, Y dopants could effectively reduce surface states at YZO-NRs, and β-phase PFO might increase the photocarrier conductivity in PFO. The results suggest that the β-phase p-PFO/n-YZO-NR hybrid heterostructure holds promise for high-performance UV photodetectors.
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Ajmal, Hafiz Muhammad Salman, Fasihullah Khan, Noor Ul Huda, et al. "High-Performance Flexible Ultraviolet Photodetectors with Ni/Cu-Codoped ZnO Nanorods Grown on PET Substrates." Nanomaterials 9, no. 8 (2019): 1067. http://dx.doi.org/10.3390/nano9081067.
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As a developing technology for flexible electronic device fabrication, ultra-violet (UV) photodetectors (PDs) based on a ZnO nanostructure are an effective approach for large-area integration of sensors on nonconventional substrates, such as plastic or paper. However, photoconductive ZnO nanorods grown on flexible substrates have slow responses or recovery as well as low spectral responsivity R because of the native defects and inferior crystallinity of hydrothermally grown ZnO nanorods at low temperatures. In this study, ZnO nanorod crystallites are doped with Cu or Ni/Cu when grown on polyethylene terephthalate (PET) substrates in an attempt to improve the performance of flexible PDs. The doping with Ni/Cu or Cu not only improves the crystalline quality but also significantly suppresses the density of deep-level emission defects in as-grown ZnO nanorods, as demonstrated by X-ray diffraction and photoluminescence. Furthermore, the X-ray photoelectron spectroscopy analysis shows that doping with the transition metals significantly increases the oxygen bonding with metal ions with enhanced O/Zn stoichiometry in as-grown nanorods. The fabricated flexible PD devices based on an interdigitated electrode structure demonstrates a very high R of ~123 A/W, a high on-off current ratio of ~130, and a significant improvement in transient response speed exhibiting rise and fall time of ~8 and ~3 s, respectively, by using the ZnO nanorods codoped by Ni/Cu.
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Fu, Houqiang. "(Invited) III-Oxide/III-Nitride Heterostructures for Power Electronics and Optoelectronics Applications." ECS Meeting Abstracts MA2022-02, no. 34 (2022): 1243. http://dx.doi.org/10.1149/ma2022-02341243mtgabs.
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Due to their large bandgap, high critical electric field, and availability of high-quality large-size melt-grown bulk substrates, III-oxides including Ga2O3, Al2O3, In2O3, and their alloys have been extensively investigated for a myriad of electronic and optoelectronic applications. Recently, β-Ga2O3 based power electronics, RF transistors, and ultraviolet (UV) photodetectors have been demonstrated with promising performance. However, p-type β-Ga2O3 is still elusive due to high dopant activation energy (>1 eV), large hole effective mass, and hole trapping. This significantly limits the design freedom for β-Ga2O3 devices. Other p-type semiconductors have been proposed to form heterostructures with β-Ga2O3 such as p-NiO, p-Cu2O, and p-type III-nitrides. As popular wide bandgap semiconductors, III-nitrides are promising candidates to form III-oxide/III-nitride heterostructures to enable advanced device structures and new functionalities. Furthermore, III-oxides and III-nitrides can be epitaxially grown on each other with small lattice mismatch (< 5% for GaN and β-Ga2O3) by the industrial standard epitaxial method MOCVD. For example, vertical GaN violet LEDs grown on n-type β-Ga2O3 substrates have been reported. This talk will present our recent work on III-oxide/III-nitride heterostructures in power electronics and optoelectronics. For power electronics, β-Ga2O3/GaN p-n heterojunctions will first be discussed. The heterojunction via mechanical exfoliation shows decent forward rectifying behaviors and thermal stability up to 200 °C but relatively low breakdown voltages (BV). To improve the breakdown capability, we carried out a comprehensive TCAD simulation study to design mesa edge termination for kV-class β-Ga2O3/GaN p-n heterojunctions. It was found that the electric field crowding effect is the main reason for the low BV. Several mesa edge termination structures were investigated such as deeply-etched mesa, step mesa, and p-GaN guard ring. Second, normally-off AlN/β-Ga2O3 field-effect transistors using polarization-induced doping will be discussed. A large two-dimensional electron gas is formed at the AlN/β-Ga2O3 interface due to polarization effects, and p-GaN gate is used to realize tunable positive threshold voltage. The device transfer and output characteristics with different device structures are also studied. For optoelectronics applications, self-powered spectrally distinctive Ga2O3/GaN heterojunction UV photodetectors grown by MOCVD will be discussed. Opposite current polarities are observed under different illumination wavelengths due to different carrier transports, which can be utilized to distinguish different spectra. These results indicate that (ultra)wide bandgap III-oxide/III-nitride heterostructures are a promising platform to enable new device structures and functionalities.
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Biondo, Stéphane, Mihai Lazar, Laurent Ottaviani, et al. "Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour." Materials Science Forum 711 (January 2012): 114–17. http://dx.doi.org/10.4028/www.scientific.net/msf.711.114.
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In this paper, we deal with the study of Ultra Violet (UV) photodetector device based on SiC material undergoing a p-i-n structure process. Current density-voltage (J-V) measurements in reverse and forward bias, are performed on the UV photodetector device. Due to a very thin p+-type doping layer, a high reactivation annealing and the metallic contact deposit, experimental measurements point out Junction Barrier Schottky (JBS) device behaviour in spite of the p-i-n structure device process. To understand this involuntary phenomenon, these experimental characteristics are accompanied with an experimental study by the SIMS analysis.
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Li, Bin, Jin Wei Liu, Hao Luo, Chao Yu Feng, and Xiao Xiao Duan. "The Warning Measurement System of Erythema Time with Ultra Violet Photodevice and Properties of Biological Filtration Materials." Advanced Materials Research 643 (January 2013): 9–12. http://dx.doi.org/10.4028/www.scientific.net/amr.643.9.
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This proposal is directed toward the development of innovative high-efficiency UV photodevice based on the wide bandgap III-nitride (GaN-based) semiconductors for reliable operation at the solar radiation action spectrum for human. This paper uses the UVM-30 photodetector to measure the UVI and the max exposure time (Erythema Time) in sun real time with a simple linear function relationship circuit, and introduces the function, performance, system configuration as well as the partial flow chart of the flowmeter.
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Ali, A. M., A. S. Mohammed, and S. M. Hanfoosh. "The spectral responsivity enhancement for gallium-doped CdO/PS heterojunction for UV detector." Journal of Ovonic Research 17, no. 3 (2021): 239–45. http://dx.doi.org/10.15251/jor.2021.173.239.
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Despite the large number of studies on CdO, it was until very recently the system properties Ga-doped CdO/PS was not recognize well. In this paper, photodetector of Gadoped CdO/Si and Ga-doped CdO/PS nanocrystalline with different Ga ratios (0, 3, and 7%) have been prepare by spray pyrolysis deposition (SPD). The structural properties of un doped CdO and doped films were characterized by X-ray diffraction, which refer to that the CdO thin films have cubic structure. The energy gap of un doped film and doped with Ga increased from 2.5 to 3.56 eV with increasing Ga ratios. I-V characteristics of Gadoped CdO/PS photodiodes without illumination exhibit good rectification behavior compared with Si substrate, and the value of photocurrent increased with Ga ratios increased. The spectral responsivity curves (A/W) of all devices prepared allow acceptable sensitivity response in the visible wavelength region, and shifted toward ultra-violet region with increase Ga ratios.
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Alqanoo, Anas A. M., Naser M. Ahmed, Md R. Hashim, et al. "Synthesis and Deposition of Silver Nanowires on Porous Silicon as an Ultraviolet Light Photodetector." Nanomaterials 13, no. 2 (2023): 353. http://dx.doi.org/10.3390/nano13020353.
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The applications of silver nanowires (AgNWs) are clearly relevant to their purity and morphology. Therefore, the synthesis parameters should be precisely adjusted in order to obtain AgNWs with a high aspect ratio. Consequently, controlling the reaction time versus the reaction temperature of the AgNWs is crucial to synthesize AgNWs with a high crystallinity and is important in fabricating optoelectronic devices. In this work, we tracked the morphological alterations of AgNWs during the growth process in order to determine the optimal reaction time and temperature. Thus, here, the UV–Vis absorption spectra were used to investigate how the reaction time varies with the temperature. The reaction was conducted at five different temperatures, 140–180 °C. As a result, an equation was developed to describe the relationship between them and to calculate the reaction time at any given reaction temperature. It was observed that the average diameter of the NWs was temperature-dependent and had a minimum value of 23 nm at a reaction temperature of 150 °C. A significant purification technique was conducted for the final product at a reaction temperature of 150 °C with two different speeds in the centrifuge to remove the heavy and light by-products. Based on these qualities, a AgNWs-based porous Si (AgNWs/P-Si) device was fabricated, and current-time pulsing was achieved using an ultra-violet (UV) irradiation of a 375 nm wavelength at four bias voltages of 1 V, 2 V, 3 V, and 4 V. We obtained a high level of sensitivity and detectivity with the values of 2247.49% and 2.89 × 1012 Jones, respectively. The photocurrent increased from the μA range in the P-Si to the mA range in the AgNWs/P-Si photodetector due to the featured surface plasmon resonance of the AgNWs compared to the other metals.
Dissertations / Theses on the topic "Ultra-violet (UV) photodetectors"
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Biondo, Stéphane. "Simulation, réalisation et caractérisation de jonction p+n en SiC-4H, pour la photodétection de rayonnement UV." Thesis, Aix-Marseille, 2012. http://www.theses.fr/2012AIXM4340.
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Le SiC est un matériau semi-conducteur à large bande d'énergie interdite dont les très bonnes caractéristiques électriques et thermiques en font un candidat idéal pour la fabrication de composants dans le domaine de la puissance et des détecteurs de rayonnement. En particulier, la réalisation de détecteurs UV est très attendue dans les domaines suivants : détection d'incendies, imagerie de surface, astronomie, médecine, militaire… Les photodétecteurs à base de semiconducteurs à large bande interdite permettent d'obtenir une très bonne sélectivité dans l'UV, sans avoir à utiliser de filtres optiques. Le SiC semble être le matériau le plus prometteur, grâce à sa bonne stabilité chimique, mécanique et thermique, ce qui représente un avantage pour opérer en environnement extrême. Cependant le dopage du SiC nécessite un savoir-faire très particulier (implantation à chaud, recuit à haute température, forte dynamique de chauffe…). Nous nous sommes proposés dans un premier temps de réaliser par implantation (ionique et plasma) des composants tests, permettant d'accéder aux caractéristiques des jonctions. Le cas des jonctions implantées n+p et p+n a été étudié. Après l'optimisation des paramètres technologiques de l'implantation et du recuit associé, la fabrication de détecteurs de rayonnement basés sur la diode Schottky ou la diode p.n a été mise en œuvre. Une étape de simulation de ces composants a été effectuée sur le logiciel Sentaurus Device (Synopsys). Les caractérisations de ces détecteurs ont montré une meilleure sensibilité pour les diodes implantées Bore par plasma<br>Silicon carbide is a wide band-gap semiconductor with electrical and thermal characteristics particularly suitable for high power devices and radiation sensors. The realisation of UV detectors is mainly useful in the following sectors: fire detection, surface imagery, astronomy, medicine, military... The photodetectors based on wide band-gap semiconductors allow to get a very good selectivity, without using optical filters. Silicon carbide seems to be the most promising material, due to its chemical, mechanical and thermal stability, inducing a reliable behaviour in extreme environment. However SiC doping requires a distinct know-how (hot ion implantation, high temperature annealing, rapid heating-rate…). Test devices have been firstly processed by using ion implantation and plasma, allowing evaluating p+n or n+p junction characteristics. After the optimisation of the technological parameters of implantation and related annealing, the realisation of radiation detectors based on Schottky or p.n diodes has been carried out. The electrical simulations of such devices were performed with Sentaurus Devices program (Synopsys). The characteristics of the devices proved an improvement with the Boron-plasma implantation
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Kalra, Anisha. "Ultra-wide Band-gap Semiconductor Heterostructures for UV Opto-electronics." Thesis, 2021. https://etd.iisc.ac.in/handle/2005/5585.
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A plethora of strategic, astronomical, commercial, and biological applications necessitate development of high-performance ultra-violet (UV) photodetectors to enable sensitive detection of low intensity UV signals. While a well-established manufacturing process line, easy circuit integration and cost-effectiveness make silicon (Si)-based photodetectors, the choice for most of the applications today; its narrow band-gap and consequently, a relatively high intrinsic carrier concentration, limit its use for applications that require sensitive room and high temperature UV detection. Photodetectors utilizing wide bandgap (WBG) semiconducting absorber layers such as Aluminium Gallium Nitride (AlGaN) and Gallium Oxide (Ga2O3) offer multiple advantages such as intrinsic solar-blindness, room temperature operation, improved external quantum efficiency (EQE), and radiation hardness. Vertical device architectures such as p-i-n and Schottky detectors are especially interesting since they benefit from an intrinsic field in the absorber region that allows UV sensing without the application of an external bias and a vertical topology that enables integration into focal plane arrays. This circumvents the need of an added voltage supply and a cooling assembly, thereby reducing the system complexity, cost, footprint, and weight significantly. Finally, epitaxial heterojunctions of these WBG semiconductors hold promise towards enabling next-generation multi-spectral/broad-band detectors whose response can be tuned to suit specific applications. The first part of the thesis focuses on development of high efficiency, low noise, vertical, deep-UV (sub-290 nm) AlGaN detectors on sapphire substrates. The presence of a high density of defects in the hetero-epitaxially grown AlGaN epi-layers and the inability to realize low resistance contacts impedes the performance of these detectors. This is especially challenging for Al-rich AlGaN epilayers required for sub-290 nm detection as an increase in the Al-mole fraction leads to an increased bond strength, making the diffusive mechanisms that aid dislocation density (DD) reduction difficult. Also, the dopant activation energies increase in going from GaN to AlN, thus posing difficulties in growth of low resistive Al-rich AlGaN epi-layers. The presented work therefore aims to develop growth strategies to address these challenges, establish a microstructure-defect-detector performance correlation and utilize this understanding for the development of record performance Schottky and p-i-n ultraviolet photodetectors on c-plane sapphire substrates. The second part of the thesis aims at exploring device designs for the realization of broadband UV detectors, whose response can be tuned in any application-specific wavelength range. Such a multi-spectral/broadband response cannot be achieved using a single absorber layer since the response of any detector peaks at a given wavelength and falls on either side of the peak. Energy band engineering at epitaxial heterojunctions of AlGaN and β-Ga2O3 has been explored as a novel, scalable approach for demonstration of UV-A/C and UV-C broadband detectors.