Academic literature on the topic 'Ultra-violet (UV) photodetectors'
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Journal articles on the topic "Ultra-violet (UV) photodetectors"
Jacob, Anju Anna, L. Balakrishnan, S. R. Meher, K. Shambavi, and Z. C. Alex. "Synthesis of Zn1−xCdxO Nanoparticles by Co-Precipitation: Structural, Optical and Photodetection Analysis." International Journal of Nanoscience 17, no. 01n02 (October 12, 2017): 1760015. http://dx.doi.org/10.1142/s0219581x17600158.
Full textYing, Haoting, Xin Li, Yutong Wu, Yi Yao, Junhua Xi, Weitao Su, Chengchao Jin, Minxuan Xu, Zhiwei He, and Qi Zhang. "High-performance ultra-violet phototransistors based on CVT-grown high quality SnS2flakes." Nanoscale Advances 1, no. 10 (2019): 3973–79. http://dx.doi.org/10.1039/c9na00471h.
Full textDe Souza, Michelly, Olivier Bulteel, Denis Flandre, and Marcelo Antonio Pavanello. "Temperature and Silicon Film Thickness Influence on the Operation of Lateral SOI PIN Photodiodes for Detection of Short Wavelengths." Journal of Integrated Circuits and Systems 6, no. 2 (December 27, 2011): 107–13. http://dx.doi.org/10.29292/jics.v6i2.346.
Full textLee, Youngmin, Soo Youn Kim, Deuk Young Kim, and Sejoon Lee. "Highly Sensitive UV Photodiode Composed of β-Polyfluorene/YZnO Nanorod Organic-Inorganic Hybrid Heterostructure." Nanomaterials 10, no. 8 (July 29, 2020): 1486. http://dx.doi.org/10.3390/nano10081486.
Full textAjmal, Hafiz Muhammad Salman, Fasihullah Khan, Noor Ul Huda, Sunjung Lee, Kiyun Nam, Hae Young Kim, Tae-Hyong Eom, and Sam Dong Kim. "High-Performance Flexible Ultraviolet Photodetectors with Ni/Cu-Codoped ZnO Nanorods Grown on PET Substrates." Nanomaterials 9, no. 8 (July 25, 2019): 1067. http://dx.doi.org/10.3390/nano9081067.
Full textFu, Houqiang. "(Invited) III-Oxide/III-Nitride Heterostructures for Power Electronics and Optoelectronics Applications." ECS Meeting Abstracts MA2022-02, no. 34 (October 9, 2022): 1243. http://dx.doi.org/10.1149/ma2022-02341243mtgabs.
Full textBiondo, Stéphane, Mihai Lazar, Laurent Ottaviani, Wilfried Vervisch, Olivier Palais, R. Daineche, Dominique Planson, F. Milesi, J. Duchaine, and Franck Torregrosa. "Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour." Materials Science Forum 711 (January 2012): 114–17. http://dx.doi.org/10.4028/www.scientific.net/msf.711.114.
Full textLi, Bin, Jin Wei Liu, Hao Luo, Chao Yu Feng, and Xiao Xiao Duan. "The Warning Measurement System of Erythema Time with Ultra Violet Photodevice and Properties of Biological Filtration Materials." Advanced Materials Research 643 (January 2013): 9–12. http://dx.doi.org/10.4028/www.scientific.net/amr.643.9.
Full textAli, A. M., A. S. Mohammed, and S. M. Hanfoosh. "The spectral responsivity enhancement for gallium-doped CdO/PS heterojunction for UV detector." Journal of Ovonic Research 17, no. 3 (May 2021): 239–45. http://dx.doi.org/10.15251/jor.2021.173.239.
Full textAlqanoo, Anas A. M., Naser M. Ahmed, Md R. Hashim, Munirah A. Almessiere, Sofyan A. Taya, Ahmed Alsadig, Osamah A. Aldaghri, and Khalid Hassan Ibnaouf. "Synthesis and Deposition of Silver Nanowires on Porous Silicon as an Ultraviolet Light Photodetector." Nanomaterials 13, no. 2 (January 15, 2023): 353. http://dx.doi.org/10.3390/nano13020353.
Full textDissertations / Theses on the topic "Ultra-violet (UV) photodetectors"
Biondo, Stéphane. "Simulation, réalisation et caractérisation de jonction p+n en SiC-4H, pour la photodétection de rayonnement UV." Thesis, Aix-Marseille, 2012. http://www.theses.fr/2012AIXM4340.
Full textSilicon carbide is a wide band-gap semiconductor with electrical and thermal characteristics particularly suitable for high power devices and radiation sensors. The realisation of UV detectors is mainly useful in the following sectors: fire detection, surface imagery, astronomy, medicine, military... The photodetectors based on wide band-gap semiconductors allow to get a very good selectivity, without using optical filters. Silicon carbide seems to be the most promising material, due to its chemical, mechanical and thermal stability, inducing a reliable behaviour in extreme environment. However SiC doping requires a distinct know-how (hot ion implantation, high temperature annealing, rapid heating-rate…). Test devices have been firstly processed by using ion implantation and plasma, allowing evaluating p+n or n+p junction characteristics. After the optimisation of the technological parameters of implantation and related annealing, the realisation of radiation detectors based on Schottky or p.n diodes has been carried out. The electrical simulations of such devices were performed with Sentaurus Devices program (Synopsys). The characteristics of the devices proved an improvement with the Boron-plasma implantation
Kalra, Anisha. "Ultra-wide Band-gap Semiconductor Heterostructures for UV Opto-electronics." Thesis, 2021. https://etd.iisc.ac.in/handle/2005/5585.
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