Relevant bibliographies by topics / Ultra-violet (UV) photodetectors

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Academic literature on the topic 'Ultra-violet (UV) photodetectors'

Author: Grafiati
Published: 6 September 2023
Last updated: 31 July 2025

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Journal articles on the topic "Ultra-violet (UV) photodetectors"

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Jacob, Anju Anna, L. Balakrishnan, S. R. Meher, K. Shambavi, and Z. C. Alex. "Synthesis of Zn1−xCdxO Nanoparticles by Co-Precipitation: Structural, Optical and Photodetection Analysis." International Journal of Nanoscience 17, no. 01n02 (2017): 1760015. http://dx.doi.org/10.1142/s0219581x17600158.

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Zinc oxide (ZnO) is a wide bandgap semiconductor with excellent photoresponse in ultra-violet (UV) regime. Tuning the bandgap of ZnO by alloying with cadmium can shift its absorption cutoff wavelength from UV to visible (Vis) region. Our work aims at synthesis of Zn[Formula: see text]CdxO nanoparticles by co-precipitation method for the fabrication of photodetector. The properties of nanoparticles were analyzed using X-ray diffractometer, UV–Vis spectrometer, scanning electron microscope and energy dispersive spectrometer. The incorporation of cadmium without altering the wurtzite structure re
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Sharaf, Afsal, Shantikumar Nair, and Laxman Raju Thoutam. "Engineered ultra-wide bandgap Sm2O3/MWCNT nanocomposites for deep-ultra violet photodetectors." Nanotechnology 36, no. 13 (2025): 135706. https://doi.org/10.1088/1361-6528/adab7d.

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Abstract The current work focuses on the synthesis and control of cubic vs monoclinic phase structures of Sm2O3 via., cost-effective solution-based sol–gel technique. The structural analysis of the as-synthesized Sm2O3 powder reveals the phase-change from initial mixture of cubic and monoclinic phases (82:18) to almost cubic phase (96:4), with increase of polyethylene glycol 600 additive from 2% to 25% respectively. The dark-current of the films made from as-synthesized Sm2O3 powder revealed no measurable current, indicates its high defect tolerance against growth conditions. The multi-walled
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Ying, Haoting, Xin Li, Yutong Wu, et al. "High-performance ultra-violet phototransistors based on CVT-grown high quality SnS2flakes." Nanoscale Advances 1, no. 10 (2019): 3973–79. http://dx.doi.org/10.1039/c9na00471h.

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De Souza, Michelly, Olivier Bulteel, Denis Flandre, and Marcelo Antonio Pavanello. "Temperature and Silicon Film Thickness Influence on the Operation of Lateral SOI PIN Photodiodes for Detection of Short Wavelengths." Journal of Integrated Circuits and Systems 6, no. 2 (2011): 107–13. http://dx.doi.org/10.29292/jics.v6i2.346.

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This work presents an analysis of the temperature influence on the performance of a lateral thin-film SOI PIN photodiodes when illuminated by low wavelengths, in the range of blue and ultra-violet (UV). Experimental measurements performed from 100K to 400K showed that the optical responsitivity of SOI PIN photodetectors is affected by temperature change, being reduced at low and moderately high temperatures. Two-dimensional numerical simulations showed the same trends as in the experimental results, and were used both to investigate the physical phenomena responsible for the observed behavior
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Lee, Youngmin, Soo Youn Kim, Deuk Young Kim та Sejoon Lee. "Highly Sensitive UV Photodiode Composed of β-Polyfluorene/YZnO Nanorod Organic-Inorganic Hybrid Heterostructure". Nanomaterials 10, № 8 (2020): 1486. http://dx.doi.org/10.3390/nano10081486.

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The highly sensitive ultra-violet (UV) photodiode was demonstrated on the organic-inorganic hybrid heterostructure of β-phase p-type polyfluorene (PFO)/n-type yttrium-doped zinc oxide nanorods (YZO-NRs). The device was fabricated through a simple fabrication technique of β-phase PFO coating onto YZO-NRs that had been directly grown on graphene by the hydrothermal synthesis method. Under UV illumination (λ = 365 nm), the device clearly showed excellent photoresponse characteristics (e.g., high quantum efficiency ~690%, high photodetectivity ~3.34 × 1012 cm·Hz1/2·W−1, and fast response time ~0.1
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Ajmal, Hafiz Muhammad Salman, Fasihullah Khan, Noor Ul Huda, et al. "High-Performance Flexible Ultraviolet Photodetectors with Ni/Cu-Codoped ZnO Nanorods Grown on PET Substrates." Nanomaterials 9, no. 8 (2019): 1067. http://dx.doi.org/10.3390/nano9081067.

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As a developing technology for flexible electronic device fabrication, ultra-violet (UV) photodetectors (PDs) based on a ZnO nanostructure are an effective approach for large-area integration of sensors on nonconventional substrates, such as plastic or paper. However, photoconductive ZnO nanorods grown on flexible substrates have slow responses or recovery as well as low spectral responsivity R because of the native defects and inferior crystallinity of hydrothermally grown ZnO nanorods at low temperatures. In this study, ZnO nanorod crystallites are doped with Cu or Ni/Cu when grown on polyet
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Kang, Seong Jae, Jun Hyung Jeong, Jin Hyun Ma, et al. "Enhancement of the Visible Light Photodetection of Inorganic Photodiodes via Additional Quantum Dots Layers." Micromachines 15, no. 3 (2024): 318. http://dx.doi.org/10.3390/mi15030318.

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Visible light photodetectors are extensively researched with transparent metal oxide holes/electron layers for various applications. Among the metal oxide transporting layers, nickel oxide (NiO) and zinc oxide (ZnO) are commonly adopted due to their wide band gap and high transparency. The objective of this study was to improve the visible light detection of NiO/ZnO photodiodes by introducing an additional quantum dot (QD) layer between the NiO and ZnO layers. Utilizing the unique property of QDs, we could select different sizes of QDs and responsive light wavelength ranges. The resulting red
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Fu, Houqiang. "(Invited) III-Oxide/III-Nitride Heterostructures for Power Electronics and Optoelectronics Applications." ECS Meeting Abstracts MA2022-02, no. 34 (2022): 1243. http://dx.doi.org/10.1149/ma2022-02341243mtgabs.

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Due to their large bandgap, high critical electric field, and availability of high-quality large-size melt-grown bulk substrates, III-oxides including Ga2O3, Al2O3, In2O3, and their alloys have been extensively investigated for a myriad of electronic and optoelectronic applications. Recently, β-Ga2O3 based power electronics, RF transistors, and ultraviolet (UV) photodetectors have been demonstrated with promising performance. However, p-type β-Ga2O3 is still elusive due to high dopant activation energy (>1 eV), large hole effective mass, and hole trapping. This significantly limits the desi
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Biondo, Stéphane, Mihai Lazar, Laurent Ottaviani, et al. "Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour." Materials Science Forum 711 (January 2012): 114–17. http://dx.doi.org/10.4028/www.scientific.net/msf.711.114.

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In this paper, we deal with the study of Ultra Violet (UV) photodetector device based on SiC material undergoing a p-i-n structure process. Current density-voltage (J-V) measurements in reverse and forward bias, are performed on the UV photodetector device. Due to a very thin p+-type doping layer, a high reactivation annealing and the metallic contact deposit, experimental measurements point out Junction Barrier Schottky (JBS) device behaviour in spite of the p-i-n structure device process. To understand this involuntary phenomenon, these experimental characteristics are accompanied with an ex
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Rahman, Shafaque, Rana Tabassum, and Aurangzeb Khurram Hafiz. "Role of MoS2/GNR heterostructures in the performance engineering of ultra-violet (UV) photodetector." Optics & Laser Technology 172 (May 2024): 110494. http://dx.doi.org/10.1016/j.optlastec.2023.110494.

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Dissertations / Theses on the topic "Ultra-violet (UV) photodetectors"

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Biondo, Stéphane. "Simulation, réalisation et caractérisation de jonction p+n en SiC-4H, pour la photodétection de rayonnement UV." Thesis, Aix-Marseille, 2012. http://www.theses.fr/2012AIXM4340.

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Le SiC est un matériau semi-conducteur à large bande d'énergie interdite dont les très bonnes caractéristiques électriques et thermiques en font un candidat idéal pour la fabrication de composants dans le domaine de la puissance et des détecteurs de rayonnement. En particulier, la réalisation de détecteurs UV est très attendue dans les domaines suivants : détection d'incendies, imagerie de surface, astronomie, médecine, militaire… Les photodétecteurs à base de semiconducteurs à large bande interdite permettent d'obtenir une très bonne sélectivité dans l'UV, sans avoir à utiliser de filtres opt
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Kalra, Anisha. "Ultra-wide Band-gap Semiconductor Heterostructures for UV Opto-electronics." Thesis, 2021. https://etd.iisc.ac.in/handle/2005/5585.

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A plethora of strategic, astronomical, commercial, and biological applications necessitate development of high-performance ultra-violet (UV) photodetectors to enable sensitive detection of low intensity UV signals. While a well-established manufacturing process line, easy circuit integration and cost-effectiveness make silicon (Si)-based photodetectors, the choice for most of the applications today; its narrow band-gap and consequently, a relatively high intrinsic carrier concentration, limit its use for applications that require sensitive room and high temperature UV detection. Photodetectors
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