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Journal articles on the topic 'Ultra-thin Epitaxial Films'

Author: Grafiati

Published: 7 September 2023

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1

Badoz, P. A., A. Briggs, E. Rosencher, and F. Arnaud d'Avitaya. "Superconductivity in ultra-thin CoSi2 epitaxial films." Journal de Physique Lettres 46, no. 20 (1985): 979–83. http://dx.doi.org/10.1051/jphyslet:019850046020097900.

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2

Orna, Julia, Luis Morellón, Pedro Algarabel, José M. De Teresa, Amalio Fernández-Pacheco, Gala Simón, Cesar Magen, José A. Pardo, and M. Ricardo Ibarra. "Fe₃O₄ Epitaxial Thin Films and Heterostructures: Magnetotransport and Magnetic Properties." Advances in Science and Technology 67 (October 2010): 82–91. http://dx.doi.org/10.4028/www.scientific.net/ast.67.82.

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In this article, we review our recent research on Fe3O4 epitaxial thin films and Fe3O4/MgO/Fe epitaxial heterostructures. More specifically, we report on the magnetotransport properties of Fe3O4 epitaxial films in a wide range of film thicknesses and temperatures, focusing on the anomalous, planar and ordinary Hall effects. We also summarize our insight on the origin of the enhanced magnetic moment found in ultra-thin magnetite films (thickness t < 5 nm). Finally, our work on the growth, and structural and magnetic characterization of heteroepitaxial Fe3O4/MgO/Fe trilayers is presented.

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3

Meyers, D., E. J. Moon, M. Kareev, I. C. Tung, B. A. Gray, Jian Liu, M. J. Bedzyk, J. W. Freeland, and J. Chakhalian. "Epitaxial stabilization of ultra-thin films of EuNiO3." Journal of Physics D: Applied Physics 46, no. 38 (September 4, 2013): 385303. http://dx.doi.org/10.1088/0022-3727/46/38/385303.

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4

Boni, G. A., L. Hrib, S. B. Porter, G. Atcheson, I. Pintilie, K. Rode, and L. Pintilie. "Electrical properties of NiFe2O4 epitaxial ultra-thin films." Journal of Materials Science 52, no. 2 (September 15, 2016): 793–803. http://dx.doi.org/10.1007/s10853-016-0376-8.

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5

Shen, H., M. Wraback, J. Pamulapati, S. Liang, C. Gorla, and Y. Lu. "Properties of Epitaxial Zno Thin Films for Gan and Related Applications." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 339–43. http://dx.doi.org/10.1557/s1092578300002696.

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In this paper, we present a detailed study of high quality (110) ZnO films, epitaxially grown on R-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The epitaxial relationships are (11 0 ) ZnO//( 01 2 ) Al2O3 and [0001] ZnO//[011] Al2O3 as confirmed by X-ray diffraction (θ-2θ, and ϕ-scan) and high-resolution cross-sectional transmission electron microscopy (HR-TEM). Low temperature photoluminescence (PL) indicates the ZnO thin films are almost strain free. Optical absorption and reflection measurements with linearly polarized light indicate a strong optical anisotropy. The polarization rotation towards the C-axis associated with the optical anisotropy is utilized to demonstrate an optically addressed ultra-fast, ultraviolet light modulator.

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6

Zheng, Xin Yu, Lauren J. Riddiford, Jacob J. Wisser, Satoru Emori, and Yuri Suzuki. "Ultra-low magnetic damping in epitaxial Li0.5Fe2.5O4 thin films." Applied Physics Letters 117, no. 9 (August 31, 2020): 092407. http://dx.doi.org/10.1063/5.0023077.

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7

De Luca, G. M., D. Preziosi, F. Chiarella, R. Di Capua, S. Gariglio, S. Lettieri, and M. Salluzzo. "Ferromagnetism and ferroelectricity in epitaxial BiMnO3 ultra-thin films." Applied Physics Letters 103, no. 6 (August 5, 2013): 062902. http://dx.doi.org/10.1063/1.4818136.

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8

Segmüller, Armin. "Characterization of Epitaxial Films by X-Ray Diffraction." Advances in X-ray Analysis 29 (1985): 353–66. http://dx.doi.org/10.1154/s0376030800010454.

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AbstractIn this paper, the application of recently developed x-ray diffraction techniques to the characterization of thin epitaxial films will be discussed. The double-crystal diffractometer, with high resolution in the non-dispersive arrangement, enables the materials scientist to study epitaxial systems having a very small mismatch with high precision. A key part of the characterization of an epitaxial film is the determination of the strain tensor by measuring lattice spacing! in various directions The determination of strain and composition profiles in ion-implanted films, epitaxial layers and superlattices by rocking-curve analysis will also be reviewed. Grazingincidence diffraction, an emerging new technique, can be used to obtain structural details parallel to the interface on films with thicknesses ranging down to a few atomic layers. The synchroton has now become increasingly available as a powerful source of x radiation which will facilitate the application of conventional and grazing-incidence diffraction to ultra-thin films.

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9

Zhang, Haimin, Dezhi Song, Fuyang Huang, Jun Zhang, and Ye-Ping Jiang. "Critical behavior in the epitaxial growth of two-dimensional tellurium films on SrTiO₃ (001) substrates." Chinese Physics B 32, no. 6 (May 1, 2023): 066802. http://dx.doi.org/10.1088/1674-1056/acc80d9.

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Materials’ properties may differ in the thin-film form, especially for epitaxial ultra-thin films, where the substrates play an important role in their deviation from the bulk quality. Here by molecular beam epitaxy (MBE) and scanning tunneling microscopy/spectroscopy, we investigate the growth kinetics of ultra-thin tellurium (Te) films on SrTiO3 (STO) (001). The MBE growth of Te films usually exhibits Volmer–Weber (VW) island growth mode and no a-few-monolayer film with full coverage has been reported. The absence of wetting-layer formation in the VW growth mode of Te on STO (001) is resulted from its low diffusion barriers as well as its relatively higher surface energy compared with those of the substrate and the interface. Here we circumvent these limiting factors and achieve the growth of ultra-thin β-Te films with near-complete coverages by driving the growth kinetics to the extreme condition. There is a critical thickness (3 monolayer) above which the two-dimensional Te films can form on the STO (001) substrate. In addition, the scanning tunneling spectra on the ultra-thin Te film grown on STO exhibits an enormously large forbidden gap compared with that grown on the graphene substrate. Our work establishes the necessary conditions for the growth of ultra-thin materials with similar kinetics and thermodynamics.

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10

Lenshin, Aleksandr, Pavel Seredin, Dmitry Goloshchapov, Ali O. Radam, and Andrey Mizerov. "MicroRaman Study of Nanostructured Ultra-Thin AlGaN/GaN Thin Films Grown on Hybrid Compliant SiC/Por-Si Substrates." Coatings 12, no. 5 (May 3, 2022): 626. http://dx.doi.org/10.3390/coatings12050626.

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In our study, for the first time we demonstrate the advantages of using a compliant hybrid substrate of porSi/SiC to grow high-quality ultra-thin nanostructured AlxGa1−xN/GaN heterostructures using molecular beam epitaxy with plasma-activated nitrogen. Comparison of our experimental results obtained by micro-Raman spectroscopy, deconvolution, and the fitting of the experimental Raman spectra and subsequent calculations with information from already established literature sources show that the use of such a hybrid SiC/porSi substrate has a number of undeniable advantages for the growth of ultra-thin AlxGa1−xN/GaN nanoheterostructures without requiring the use of thick AIIIN buffer layers. Direct growth on a hybrid compliant substrate of SiC/porSi leads to a substantial relaxation in the elastic stresses between the epitaxial film, porous silicon, and silicon carbide, which consequently affects the structural quality of the ultra-thin AlxGa1−xN/GaN epitaxial layers. The experimental and computational data obtained in our work are important for understanding the physics and technology of AlxGa1−xN/GaN nanoheterostructures and will contribute to their potential applications in optoelectronics.

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11

Middey, S., M. Kareev, D. Meyers, X. Liu, Y. Cao, S. Tripathi, D. Yazici, et al. "Epitaxial stabilization of ultra thin films of electron doped manganites." Applied Physics Letters 104, no. 20 (May 19, 2014): 202409. http://dx.doi.org/10.1063/1.4879456.

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12

Sone, Junki, Tsuyoshi Yamagami, Yuki Aoki, Kan Nakatsuji, and Hiroyuki Hirayama. "Epitaxial growth of silicene on ultra-thin Ag(111) films." New Journal of Physics 16, no. 9 (September 17, 2014): 095004. http://dx.doi.org/10.1088/1367-2630/16/9/095004.

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13

Stanescu, S., C. Boeglin, A. Barbier, and J. P. Deville. "Epitaxial growth of ultra-thin NiO films on Cu(111)." Surface Science 549, no. 2 (January 2004): 172–82. http://dx.doi.org/10.1016/j.susc.2003.11.039.

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14

Kalinowski, R., C. Meyer, A. Wawro, and L. T. Baczewski. "Magnetic anisotropy in MBE-grown epitaxial gadolinium ultra-thin films." Thin Solid Films 367, no. 1-2 (May 2000): 189–92. http://dx.doi.org/10.1016/s0040-6090(00)00670-2.

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15

Patel, Ranjan Kumar, Shashank Kumar Ojha, Siddharth Kumar, Akash Saha, Prithwijit Mandal, J. W. Freeland, and S. Middey. "Epitaxial stabilization of ultra thin films of high entropy perovskite." Applied Physics Letters 116, no. 7 (February 18, 2020): 071601. http://dx.doi.org/10.1063/1.5133710.

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16

YANG, T. R., G. ILONCA, V. TOMA, P. BALINT, and M. BODEA. "MAGNETIC RESISTIVITY IN Bi2Sr2Ca(Cu1-xCox)2Od EPITAXIAL THIN FILMS." International Journal of Modern Physics B 21, no. 01 (January 10, 2007): 127–32. http://dx.doi.org/10.1142/s0217979207035923.

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The scaling behavior of the effective activation energy of high-quality epitaxial c-oriented Bi 2 Sr 2 Ca ( Cu 1-x Co x)2 O d thin films with 0≤x ≤0.025 has been studied as a function of temperature and magnetic field. For all samples, the effective activation energy scales as U(T, μoH)=Uo(1-T/T c )mHn with exponent m=1.25±0.03, n=-1/2 and the field scaling 1/μoH and -UμoH for thick films and ultra thin films, respectively. The results are discussed taking into account of the influence of the Co substitution with a model in which U(T, H) arises from plastic deformations of the viscous flux liquid above the vortex-glass transition temperature.

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17

Tanabe, Iori, Haseeb Kazi, Yuan Cao, Jack L. Rodenburg, Takashi Komesu, Bin Dong, Frank L. Pasquale, M. Sky Driver, Jeffry A. Kelber, and Peter A. Dowben. "Strain induced super-paramagnetism in Cr2O3 in the ultra thin film limit." MRS Proceedings 1729 (2015): 79–83. http://dx.doi.org/10.1557/opl.2015.5.

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ABSTRACTUltra thin films of chromia (Cr2O3), less than 3 nm thick, grown epitaxial on α-Al2O3 (sapphire), and are thus compressively strained in-plane. The resulting films show evidence of some magnetic ordering above the Néel temperature of chromia (307 K). The observed higher temperature hysteresis effect observed are very likely a strain effect, and not associated with the typical antiferromagnetic ordering expected of chromia.

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18

Baburin, Aleksandr S., Anton I. Ivanov, Evgeniy S. Lotkov, Olga S. Sorokina, Irina A. Boginskaya, Evgeniy V. Sergeev, Kirill A. Buzaverov, et al. "Epitaxial Silver Films Morphology and Optical Properties Evolution over Two Years." Coatings 10, no. 10 (September 23, 2020): 911. http://dx.doi.org/10.3390/coatings10100911.

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Silver and gold are the most commonly used materials in optics and plasmonics. Silver has the lowest optical losses in the visible and near-infrared wavelength range, but it faces a serious problem—degradation over time. It has been repeatedly reported that the optical properties of silver thin films rapidly degrade when exposed to the atmosphere. This phenomenon was described by various mechanisms: rapid silver oxidation, sorption of sulfur or oxygen, formation of silver compounds with chlorine, sulfur, and oxygen. In this work, we systematically studied single-crystalline silver films from 25 to 70 nm thicknesses for almost two years. The surface morphology, crystalline structure and optical characteristics of the silver films were measured using spectroscopic ellipsometry, ultra-high-resolution scanning electron microscopy, and stylus profilometry under standard laboratory conditions. After 19 months, bulk structures appeared on the surface of thin films. These structures are associated with relaxation of internal stresses combined with dewetting. Single-crystalline silver films deposited using the single-crystalline continuous ultra-smooth, low-loss, low-cost (SCULL) technology with a thickness of 35–50 nm demonstrated the best stability in terms of degradation. We have shown that the number of defects (grain boundaries and joints of terraces) is one of the key factors that influence the degradation intensity of silver films.

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19

Plaza, M., M. Abuín, A. Mascaraque, M. A. González-Barrio, and L. Pérez. "Epitaxial growth of Bi ultra-thin films on GaAs by electrodeposition." Materials Chemistry and Physics 134, no. 1 (May 2012): 523–30. http://dx.doi.org/10.1016/j.matchemphys.2012.03.027.

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20

Li, X., L. Yang, C. F. Li, M. F. Liu, Z. Fan, Y. L. Xie, C. L. Lu, et al. "Ultra-low coercive field of improper ferroelectric Ca3Ti2O7 epitaxial thin films." Applied Physics Letters 110, no. 4 (January 23, 2017): 042901. http://dx.doi.org/10.1063/1.4974217.

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21

Dziwoki, Adam, Bohdana Blyzniuk, Kinga Freindl, Ewa Madej, Ewa Młyńczak, Dorota Wilgocka-Ślęzak, Józef Korecki, and Nika Spiridis. "Magnetic-Field-Assisted Molecular Beam Epitaxy: Engineering of Fe3O4 Ultrathin Films on MgO(111)." Materials 16, no. 4 (February 10, 2023): 1485. http://dx.doi.org/10.3390/ma16041485.

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Molecular beam epitaxy is widely used for engineering low-dimensional materials. Here, we present a novel extension of the capabilities of this method by assisting epitaxial growth with the presence of an external magnetic field (MF). MF-assisted epitaxial growth was implemented under ultra-high vacuum conditions thanks to specialized sample holders for generating in-plane or out-of-plane MF and dedicated manipulator stations with heating and cooling options. The significant impact of MF on the magnetic properties was shown for ultra-thin epitaxial magnetite films grown on MgO(111). Using in situ and ex situ characterization methods, scanning tunneling microscopy, conversion electron Mössbauer spectroscopy, and the magneto-optic Kerr effect, we showed that the in-plane MF applied during the reactive deposition of 10 nm Fe3O4(111)/MgO(111) heterostructures influenced the growth morphology of the magnetite films, which affects both in-plane and out-of-plane characteristics of the magnetization process. The observed changes are explained in terms of modification of the effective magnetic anisotropy.

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22

Gao, H.-J., X. D. Fan, D. Kumar, K. G. Cho, R. K. Singh, and S. J. Pennycook. "Atomic Structure of Y2O3:Eu/LaA1O3 Interfaces." Microscopy and Microanalysis 6, S2 (August 2000): 1058–59. http://dx.doi.org/10.1017/s1431927600037788.

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There has been intense interest in preparing single crystalline yttrium oxide (Y2O3) thin films for applications in ultra-large scale integration (ULSI) gate insulators, ULSI capacitors, and, by addition of suitable dopant species, for electroluminescent devices. Y2O3 has a C-type rare-earth sesquioxide structure, closely related to the fluorite structure with a cell parameter a= 1.060 nm and space group Th (Ia3). LaAIO3 (LAO) is a rhombohedral structure with lattice parameters a = 0.378 nm, θ ≤ 90.5°. The lattice mismatch with the <110> direction of the YO is therefore less than 0.8%, and so we would anticipate epitaxial growth of single crystalline YO thin films on the LAO (001) substrate to be feasible. Eu activated YO thin films were deposited by laser ablation on (001) LAO substrates. TEM bright field images and electron diffraction patterns were recorded in a Philips EM-400 electron microscope operated at lOOkV. Z-contrast imaging was conducted in a VG HB603 STEM at 300kV. In this presentation, we will report the epitaxial growth of YO thin films doped with ∼ wt 4% Eu on a LaAlO3 substrate, and the atomic structure of the interface.

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23

Claude, J. M., J. F. Thiot, V. Oderno, and C. Dufour. "Rare Earth - Fe2 Thin Films Study With Strata™." Microscopy Today 4, no. 6 (August 1996): 22–23. http://dx.doi.org/10.1017/s1551929500060867.

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The Rare-Earth Laves phases RE-Fe2 (RE represent the Rare-Earth) show large magnetostrictive properties, especially at room temperature. These materials are well characterized when in bulk form, but they have rarely been studied as thin films and one can expect some important effects due to epitaxial growth.A few single crystal layers of RE-Fe2 have been studied (YFe2, TbFe2, DyFe2, ErFe2: and Dy0.7Tb0.3Fe2 known as Terfenol-D). The thickness of these different layers are between 5 and 20 nm and with [110] as a growth direction have been epitaxied. They have been deposited with a Molecular Beam Epitaxy (MBE) in an ultra high vacuum chamber. A [1120] sapphire substrate is recovered by a [110] niobium buffer. The RE and the iron are then co-deposited on the substrate which is maintained at 500°C. Lastly, an Yttrium layer is deposited on the Rare Earth material at a temperature close to ambient.

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24

Goswami, Ramasis, Syed Qadri, Neeraj Nepal, and Charles Eddy. "Microstructure and Interfaces of Ultra-Thin Epitaxial AlN Films Grown by Plasma-Enhanced Atomic Layer Deposition at Relatively Low Temperatures." Coatings 11, no. 4 (April 20, 2021): 482. http://dx.doi.org/10.3390/coatings11040482.

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We demonstrate the growth of ultra-thin AlN films on Si (111) and on a GaN/sapphire (0001) substrate using atomic layer epitaxy in the temperature range of 360 to 420 °C. Transmission electron microscopy and X-ray diffraction were used to characterize the interfaces, fine scale microstructure, and the crystalline quality of thin films. Films were deposited epitaxily on Si (111) with a hexagonal structure, while on the GaN/sapphire (0001) substrate, the AlN film is epitaxial and has been deposited in a metastable zinc-blende cubic phase. Transmission electron microscopy reveals that the interface is not sharp, containing an intermixing layer with cubic AlN. We show that the substrate, particularly the strain, plays a major role in dictating the crystal structure of AlN. The strain, estimated in the observed orientation relation, is significantly lower for cubic AlN on hexagonal GaN as compared to the hexagonal AlN on hexagonal GaN. On the Si (111) substrate, on the other hand, the strain in the observed orientation relation is 0.8% for hexagonal AlN, which is substantially lower than the strain estimated for the cubic AlN on Si(111).

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25

Chen, Xuan, Siyu Fang, Ping Xue, Jiming Huang, Mi Tang, and Zhengbang Wang. "Reversible Regulation of Polar Gas Molecules by Azobenzene-Based Photoswitchable Metal–Organic Framework Thin Films." Molecules 28, no. 2 (January 15, 2023): 877. http://dx.doi.org/10.3390/molecules28020877.

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The development of tunable molecule separation membranes requires materials with remote controllability and ultra-high separation capability. In this paper, a novel photoswitchable metal organic framework (MOF) thin film (Cu2(AzoBPDC)2) was prepared by liquid phase epitaxial layer-by-layer assembly to realize the reversible remote-controlled switching. The azobenzene side groups in the Cu2(AzoBPDC)2 thin film showed excellent reversible photoswitching performance under UV (365 nm) and Vis (450 nm) irradiation, achieving the remote-controlled mode of the diffusion flux of polar gas molecules in the MOF thin film.

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26

Krause, S., D. Meledin, V. Desmaris, A. Pavolotsky, V. Belitsky, M. Rudziński, and E. Pippel. "Epitaxial growth of ultra-thin NbN films on AlxGa1−xN buffer-layers." Superconductor Science and Technology 27, no. 6 (April 8, 2014): 065009. http://dx.doi.org/10.1088/0953-2048/27/6/065009.

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27

Alagoz, H. S., J. Jeon, R. Boos, R. H. Ahangharnejhad, K. H. Chow, and J. Jung. "Ultra-sharp oscillatory magneto-resistance in spatially confined La0.3Pr0.4Ca0.3MnO3 epitaxial thin films." Applied Physics Letters 105, no. 16 (October 20, 2014): 162409. http://dx.doi.org/10.1063/1.4900491.

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28

Šutara, F., M. Cabala, L. Sedláček, T. Skála, M. Škoda, V. Matolín, K. C. Prince, and V. Cháb. "Epitaxial growth of continuous CeO2(111) ultra-thin films on Cu(111)." Thin Solid Films 516, no. 18 (July 2008): 6120–24. http://dx.doi.org/10.1016/j.tsf.2007.11.013.

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29

Linker, G., R. Smithey, J. Geerk, F. Ratzel, R. Schneider, and A. Zaitsev. "The growth of ultra-thin epitaxial CeO2 films on r-plane sapphire." Thin Solid Films 471, no. 1-2 (January 2005): 320–27. http://dx.doi.org/10.1016/j.tsf.2004.05.126.

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30

Luo, Yumei, Xing Xu, Yudong Xia, Shengli Pang, Fen Xu, Myung-Hwan Whangbo, Lixian Sun, and Chonglin Chen. "Anomaly Negative Resistance Phenomena in Highly Epitaxial PrBa0.7Ca0.3Co2O5+δ Thin Films Induced from Superfast Redox Reactions." Catalysts 11, no. 12 (November 26, 2021): 1441. http://dx.doi.org/10.3390/catal11121441.

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Thin films of Ca-doped double perovskite, PrBa0.7Ca0.3Co2O5+δ (PBCC), were epitaxially grown on (001) SrTiO3, and their redox reactions under a switching flow of H2 and O2 gases were examined at various temperatures by measuring the resistance R(t) of the films as a function of the gas flow time t. In the temperature range between 350 and 725 °C, these thin films are reduced and oxidized in an ultrafast manner under the flow of H2 and O2 gases, respectively, suggesting that PBCC thin films are promising candidates for developing ultra-sensitive oxygen sensors or SOFC cathodes at intermediate or high temperatures. When the gas flow is switched to O2, the reduced PBCC thin films exhibit a negative resistance at temperatures above 600 °C but a positive resistance at temperatures below 600 °C. The probable cause for these anomalous transport properties is the diffusion of the H atoms from the cathode to the anode in the PBCC film, which provides a current opposite to that resulting from the external voltage.

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31

Schlepuetz, Christian, Yongsoo Yang, Nancy Senabulya, Carolina Adamo, Christianne Beekman, Wolter Siemons, Hans Christen, Darrell Schlom, and Roy Clarke. "Strain And Symmetry-induced Structural Transitions in Ultra-thin BiFeO3 Films." Acta Crystallographica Section A Foundations and Advances 70, a1 (August 5, 2014): C1610. http://dx.doi.org/10.1107/s2053273314083892.

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As one of very few room temperature multiferroic materials, bismuth ferrite (BiFeO3: BFO) has been studied extensively in recent years. The bulk form of BFO is known to have a rhombohedrally distorted quasi-cubic perovskite structure with an (a–,a–,a–) octahedral tilt pattern, exhibiting both anti-ferrodistortive displacements and a spontaneous polarization along the <111> axes. Investigating epitaxial thin films under compressive strain, several studies have reported that the polarization direction is tilted towards the [001] out-of-plane direction, while maintaining a significant in-plane component. This effect is accompanied by a significant enhancement of the spontaneous polarization and a series of phase transitions from rhombohedral (R) for small strains to R-like monoclinic (MA) to T-like monoclinic (MC) and to tetragonal (T) for larger strains [1]. Through synchrotron-based 3-dimensional reciprocal space mapping (RSM), facilitated by using X-ray area detectors (Pilatus 100K pixel detector), we have investigated the structure of ultra-thin BFO films grown on SrTiO3 (STO), LaAlO3 (LAO), and TbScO3 (TSO) substrates with thicknesses of only several unit cells. In this thickness regime, the influence of the substrate atomic structure on the properties of the ultra-thin films is very pronounced, and the films exhibit perfect heteroepitaxy up to a critical thickness when the build up of strain energy forces the films into a relaxed structure. Both on STO [2] and LAO, the ultra-thin BFO undergoes a monoclinic to tetragonal phase transition, but with very different c/a axis ratios. On TSO, a very pronounced and well-ordered stripe domainstructure evolves where the domain sizes are strongly thickness- dependent. Argonne National Laboratory's work was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under contract DE-AC02-06CH11357.

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32

Shusterman, Y. V., N. L. Yakovlev, and L. J. Schowalter. "Ultra-thin epitaxial Al and Cu films on CaF2/Si(1 1 1)." Applied Surface Science 175-176 (May 2001): 27–32. http://dx.doi.org/10.1016/s0169-4332(01)00033-2.

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33

Oshima, Chuhei, and Ayato Nagashima. "Ultra-thin epitaxial films of graphite and hexagonal boron nitride on solid surfaces." Journal of Physics: Condensed Matter 9, no. 1 (January 6, 1997): 1–20. http://dx.doi.org/10.1088/0953-8984/9/1/004.

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34

Zając, M., K. Freindl, T. Ślęzak, M. Ślęzak, N. Spiridis, D. Wilgocka-Ślęzak, and J. Korecki. "Electronic and magnetic properties of ultra-thin epitaxial magnetite films on MgO(001)." Thin Solid Films 519, no. 16 (June 2011): 5588–95. http://dx.doi.org/10.1016/j.tsf.2011.03.037.

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35

Gubbiotti, G., L. Albini, G. Carlotti, G. Socino, S. Fusari, and M. De Crescenzi. "Double magnetization reorientation in epitaxial Cu/Ni/Cu/Si(111) ultra-thin films." Surface Science 433-435 (August 1999): 685–89. http://dx.doi.org/10.1016/s0039-6028(99)00156-9.

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36

He, Jian-Wei, and PrebenJ Møller. "Epitaxial and electronic structures of ultra-thin copper films on MgO crystal surfaces." Surface Science Letters 178, no. 1-3 (December 1986): A681. http://dx.doi.org/10.1016/0167-2584(86)90218-5.

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He, Jian-Wei, and Preben J. Møller. "Epitaxial and electronic structures of ultra-thin copper films on MgO crystal surfaces." Surface Science 178, no. 1-3 (December 1986): 934–42. http://dx.doi.org/10.1016/0039-6028(86)90370-5.

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Moog, E., and S. Bader. "Magneto-optical studies of ultra-thin epitaxial films of fcc Fe on Cu." IEEE Transactions on Magnetics 23, no. 5 (September 1987): 3202–4. http://dx.doi.org/10.1109/tmag.1987.1065250.

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LEE, WOO-SUNG, KYOUNG-CHAN AHN, SOON-GIL YOON, HYUN-JUNG SHIN, YUN-SEOK KIM, and KWANG-SOO NO. "FERROELECTRIC PROPERTIES OF ULTRA-THIN EPITAXIAL Pb(Zr0.2Ti0.8)O3 THIN FILMS GROWN ON SrRuO3/SrTiO3 SUBSTRATES." Integrated Ferroelectrics 73, no. 1 (September 2005): 125–32. http://dx.doi.org/10.1080/10584580500413954.

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Wessler, B., A. Steinecker, and W. Mader. "Exit Wave Reconstruction of Interfaces Between Zno Films and ScalmgO4 Substrates." Microscopy and Microanalysis 7, S2 (August 2001): 252–53. http://dx.doi.org/10.1017/s1431927600027331.

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Epitaxial ZnO thin films were produced on basal plane ScAlMgO4 (SAM) by chemical solution deposition (CSD) (fig. 1). ZnO crystallizes in the wurtzite structure and ScAlMgO4 is isostructural to YbFe2O4, a layered structure shown in fig. 2. The crystallographic orientation relationship was observed by XRD using θ-2θ scans and off-axis φ scans to be (0001)zno ∥ (0001)SAM and zno ∥ SAM. The lattice mismatch between film and substrate is 0,09%.For TEM observations in cross-sectional geometry two substrates were glued together with the epitaxial film surfaces. Electron transparent specimens were produced by standard methods of mechanical thinning and ion beam etching. The HRTEM investigations were performed on a Philips CM300 FEG electron microscope with Ultra-Twin lens operated at 300 kV. After correction of axial coma and two-fold astigmatism images were recorded on a slow-scan lk × lk CCD camera with a sampling of 0.0193 nm/pixel.

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de Melo, C., C. Guillemard, A. M. Friedel, V. Palin, J. C. Rojas-Sánchez, S. Petit-Watelot, and S. Andrieu. "Unveiling transport properties of Co2MnSi Heusler epitaxial thin films with ultra-low magnetic damping." Applied Materials Today 25 (December 2021): 101174. http://dx.doi.org/10.1016/j.apmt.2021.101174.

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Zhang, Ruyi, Ming Liu, Lu Lu, Shao-Bo Mi, and Hong Wang. "Ultra-low temperature epitaxial growth of lithium ferrite thin films by high-pressure sputtering." CrystEngComm 17, no. 43 (2015): 8256–63. http://dx.doi.org/10.1039/c5ce01477h.

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Yang, Anli, Osami Sakata, Ryosuke Yamauchi, L. S. R. Kumara, Chulho Song, Yoshio Katsuya, Akifumi Matsuda, and Mamoru Yoshimoto. "Atomic disorder of Li0.5Ni0.5O thin films caused by Li doping: estimation from X-ray Debye–Waller factors." Journal of Applied Crystallography 48, no. 6 (November 19, 2015): 1896–900. http://dx.doi.org/10.1107/s1600576715020002.

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Cubic type room-temperature (RT) epitaxial Li0.5Ni0.5O and NiO thin films with [111] orientation grown on ultra-smooth sapphire (0001) substrates were examined using synchrotron-based thin-film X-ray diffraction. The 1\overline{1}1 and 2\overline{2}2 rocking curves including six respective equivalent reflections of the Li0.5Ni0.5O and NiO thin films were recorded. The RTB1factor, which appears in the Debye–Waller factor, of a cubic Li0.5Ni0.5O thin film was estimated to be 1.8 (4) Å2from its 1\overline{1}1 and 2\overline{2}2 reflections, even though the Debye model was originally derived on the basis of one cubic element. The corresponding Debye temperature is 281 (39) K. Furthermore, theB2factor in the pseudo-Debye–Waller factor is proposed. This parameter, which is evaluated using one reflection, was also determined for the Li0.5Ni0.5O thin film by treating Li0.5Ni0.5O and NiO as ideal NaCl crystal structures. A structural parameter for the atomic disorder is introduced and evaluated. This parameter includes the combined effects of thermal vibration, interstitial atoms and defects caused by Li doping using the two Debye–Waller factors.

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Guptasarma, Prasenjit, S. T. Bendre, S. B. Ogale, M. S. Multani, and R. Vijayaraghavan. "Thin and ultra-thin epitaxial films of YBa2Cu3O7−δ deposited on LiNbO3 substrates by pulsed excimer laser ablation." Physica C: Superconductivity 203, no. 1-2 (December 1992): 129–38. http://dx.doi.org/10.1016/0921-4534(92)90518-h.

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Brankovic, Stanko. "Electrochemical Epitaxy: Perspective and Applications." ECS Meeting Abstracts MA2022-02, no. 24 (October 9, 2022): 1008. http://dx.doi.org/10.1149/ma2022-02241008mtgabs.

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Properties of heteroepitaxial thin films are often dependent on the method and conditions for deposition[1]. In that respect, the electrochemical growth represents energetically different approach as compared to conventional vacuum deposition methods. It offers unique advantages, which can be exploited to get high quality ultra-thin films. The obvious one is that process occurs at an ambient temperature, which allows growth of heteroepitaxial metal overlayers while preserving the integrity of the interface. In recent years, significant progress has been made in controlling the thin film growth modes[2],[3],[4]. Various approaches to manipulate growth kinetics and enhance the evolution of atomically flat epitaxial overlayers were discovered[5],[6],[7]. Some of these findings were successfully implemented in electrochemical epitaxial growth resulting in development of deposition protocols such as Defect Mediated Growth (DMG)[8],[9], Surfactant Mediated Growth (SMG)[10] and growth via Surface Limited Redox Replacement (SLRR)[11],[12] with its sub-derivatives such as SEBALD, ECALD, ECALE, E-less ALD. These methods are used extensively by practitioners in different areas to synthesize monolayer or nanocluster catalysts and ultra-thin films with different compositions and applications. In this talk, we will review current perspective and progress on electrochemical epitaxial growth. Discussion will focus on fundamental and practical details of the relevant phenomena about UPD, SMG, DMG, SLRR and E-less ALD using examples and challenges that are facing researchers in these areas. If time allowed, some out of the box idea will be posted opening podium for discussion. References [1]. D. L. Smith, Thin-Film Deposition, McGraw-Hill, New York (1997). [2]. Z. Zhang and M.G. Lagally, Science, 276, 377 (1997). [3]. J. A. Venables, G. D. Spiller, M. Hanbucken, Rep. Prog. Phys., 47, 339 (1984). [4]. A. Pimpinelli and J. Villain, Physics of Crystal Growth, p. 181, Cambridge University Press, NY (2007). [5]. G. Rosenfeld, R. Servaty, C. Teichert, B. Poeselma and G. Comsa, Phys. Rev. Lett., 71, 895 (1993). [6]. J. Camarero, J. Ferron, V. Cros, L.Gomez, A.L. Vazquez de Parga, J.M. Gallego, J.E. Prieto, J.J. de Miguel and R. Miranda, Phys. Rev. Lett., 81, 850 (1998). [7]. Z. Zhang and M. G. Lagally, Phys. Rev. Lett., 72, 693 (1994). [8]. K. Sieradzki, S.R. Brankovic and N. Dimitrov, Science, 284, 138 (1999). [9]. S. Hwang, I. Oh and J. Kwak, J. Amer. Chem. Soc., 123, 7176 (2001). [10]. S.R. Brankovic, N. Dimitrov and K. Sieradzki, Electrochem. Solid-State Lett., 2, 443 (1999). [11]. S.R. Brankovic, J.X. Wang and R. R. Adzic, Surf. Sci., 474, L173 (2001). [12]. Nikolay Dimitrov, Electrochim. Acta, 209, 599 (2016).

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Ahn, Junsung, Ho Il Ji, Hyoungchul Kim, Ji-Won Son, Ho Won Jang, and Jong-Ho Lee. "Verification of Strain-Induced Fast Ionic Conduction in Thin-Film Electrolyte Via Experimental and Computational Study." ECS Meeting Abstracts MA2018-01, no. 32 (April 13, 2018): 1937. http://dx.doi.org/10.1149/ma2018-01/32/1937.

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Epitaxial strain engineering in nanostructured oxides has attracted great attention to various energy storage and conversion devices requiring fast ionic conduction, such as solid-oxide fuel cells (SOFCs), catalytic membranes, and electrochemical sensors. Recently, remarkable enhancement of ionic conductivity has been achieved by the epitaxial strain in ultra-thin epitaxial and multi-layered films.1-3 However, the strain engineering still has some lack of understanding of how much enhancement can be achieved by strain, and how to maximize the strain in nanostructured oxides. Herein, for the reliable and effective strain engineering for fast ionic conduction, strain effect on oxygen ion conductivity of thin films (Gd0.2Ce0.8O1.9-δ (100) : GDC) was investigated through both experimental study and density functional theory (DFT) calculations. We measured the oxygen ion conductivity of GDC films grown in island growth mode on Nb-doped SrTiO3 (STO) substrate. According to the conductivity measurement via electrochemical impedance spectroscopy (EIS), the activation energy for oxygen ion migration in out-of-plane direction was reduced with increase of film thickness. Furthermore, through careful strain analysis using high-resolution X-ray diffraction (HR-XRD) and strain mapping in transmission electron microscopy (TEM), the intrinsic tensile strain along column boundaries (CB) was found to be more predominant than the epitaxial strain formed at the film-substrate interface, thereby more strong tensile strain was observed in a thicker film having higher CB density. This general tendency of the activation energy change with respect to tensile strain was also verified by atomic-scale simulation in a highly doped CeO2 structure. To the best of our knowledge, this is the first experimental and theoretical verification to show the critical role of intrinsic strain on fast ion conduction in thin film electrolyte. From this presentation, you will get a great inspiration to the strain-induced fast ionic conduction in oxide thin films to improve the availability of various energy devices. References S. Schweiger, M. Kubicek, F. Messerschmitt, C. Murer, and J. L. M. Rupp, ACS Nano 8, 5032 (2014). S. Sanna, V. Esposito, J. W. Andreasen, J. Hjelm, W. Zhang, T. Kasama, S. B. Simonsen, M. Christensen, S. Linderoth, and N. Pryds, Nat. Mater. 14, 500 (2015) A. Fluri, D. Pergolesi, V. Roddatis, A. Wokaun, and T. Lippert, Nat. Commun. 7, 10692 (2016)

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Udhardt, Christian, Roman Forker, Marco Gruenewald, Yu Watanabe, Takashi Yamada, Takahiro Ueba, Toshiaki Munakata, and Torsten Fritz. "Optical observation of different conformational isomers in rubrene ultra-thin molecular films on epitaxial graphene." Thin Solid Films 598 (January 2016): 271–75. http://dx.doi.org/10.1016/j.tsf.2015.12.023.

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48

Jaren, S., E. du Trémolet de Lacheisserie, D. Givord, and C. Meyer. "Pulsed laser deposition epitaxial growth and magnetic properties of TbCo2 and TbFe2 ultra-thin films." Journal of Magnetism and Magnetic Materials 165, no. 1-3 (January 1997): 172–75. http://dx.doi.org/10.1016/s0304-8853(96)00498-2.

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49

Ueda, Koji, Mamoru Kumano, Taizoh Sadoh, and Masanobu Miyao. "Low temperature epitaxial growth of Fe3Si on Si(111) substrate through ultra-thin SiO2 films." Thin Solid Films 517, no. 1 (November 2008): 425–27. http://dx.doi.org/10.1016/j.tsf.2008.08.121.

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50

Bendounan, A., H. Cercellier, Y. Fagot-Revurat, B. Kierren, V. Yu Yurov, and D. Malterre. "Interplay between surface and electronic structures in epitaxial Ag ultra thin films on Cu(111)." Applied Surface Science 212-213 (May 2003): 33–37. http://dx.doi.org/10.1016/s0169-4332(03)00014-x.

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