Relevant bibliographies by topics / Two Dimensional Electron Systems (2DES)

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
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Academic literature on the topic 'Two Dimensional Electron Systems (2DES)'

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Published: 7 September 2023

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Journal articles on the topic "Two Dimensional Electron Systems (2DES)"

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Satou, Akira, and Koichi Narahara. "Numerical Characterization of Dyakonov-Shur Instability in Gated Two-Dimensional Electron Systems." International Journal of High Speed Electronics and Systems 25, no. 03n04 (September 2016): 1640024. http://dx.doi.org/10.1142/s0129156416400243.

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We numerically analyze the system based on the essentially non-oscillatory shock capturing scheme in order to characterize the Dyakonov-Shur (DS) instability in a gated two-dimensional electron gas system (2DES). The predictions of the linearized model are examined for a 2DES sandwiched by the top and back metallic gates. By solving Poisson equation self-consistently, the dispersive properties of plasma wave are properly estimated. Special attention is paid to the impact of dispersion to nonlinear dynamics of plasma-wave oscillation. A single-gated 2DES is also investigated for demonstrating the DS instability in practical devices.
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Freeman, M. L., Tzu-Ming Lu, and L. W. Engel. "Resistively loaded coplanar waveguide for microwave measurements of induced carriers." Review of Scientific Instruments 93, no. 4 (April 1, 2022): 043901. http://dx.doi.org/10.1063/5.0085112.

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We describe the use of a coplanar waveguide (CPW) whose slots are filled with a resistive film, a resistively loaded CPW (RLCPW), to measure two-dimensional electron systems (2DESs). The RLCPW applied to the sample hosting the 2DES provides a uniform metallic surface serving as a gate to control the areal charge density of the 2DES. As a demonstration of this technique, we present measurements on a Si metal–oxide–semiconductor field-effect transistor and a model that successfully converts microwave transmission coefficients into conductivity of a nearby 2DES capacitively coupled to the RLCPW. We also describe the process of fabricating the highly resistive metal film required for fabrication of the RLCPW.
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D’Antuono, M., A. Kalaboukhov, R. Caruso, S. Wissberg, S. Weitz Sobelman, B. Kalisky, G. Ausanio, M. Salluzzo, and D. Stornaiuolo. "Nanopatterning of oxide 2-dimensional electron systems using low-temperature ion milling." Nanotechnology 33, no. 8 (November 30, 2021): 085301. http://dx.doi.org/10.1088/1361-6528/ac385e.

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Abstract We present a ‘top-down’ patterning technique based on ion milling performed at low-temperature, for the realization of oxide two-dimensional electron system devices with dimensions down to 160 nm. Using electrical transport and scanning Superconducting QUantum Interference Device measurements we demonstrate that the low-temperature ion milling process does not damage the 2DES properties nor creates oxygen vacancies-related conducting paths in the STO substrate. As opposed to other procedures used to realize oxide 2DES devices, the one we propose gives lateral access to the 2DES along the in-plane directions, finally opening the way to coupling with other materials, including superconductors.
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Verseils, Marine, Alexandre Voute, Benjamin Langerome, Maxime Deutsch, Jean-Blaise Brubach, Alexei Kalaboukhov, Alessandro Nucara, Paolo Calvani, and Pascale Roy. "Grazing-angle reflectivity setup for the low-temperature infrared spectroscopy of two-dimensional systems." Journal of Synchrotron Radiation 26, no. 6 (September 11, 2019): 1945–50. http://dx.doi.org/10.1107/s1600577519010920.

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A new optical setup is described that allows the reflectivity at grazing incidence to be measured, including ultrathin films and two-dimensional electron systems (2DES) down to liquid-helium temperatures, by exploiting the Berreman effect and the high brilliance of infrared synchrotron radiation. This apparatus is well adapted to detect the absorption of a 2DES of nanometric thickness, namely that which forms spontaneously at the interface between a thin film of LaAlO3 and its SrTiO3 substrate, and to determine its Drude parameters.
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PHONG, TRAN CONG, VO THANH LAM, and LUONG VAN TUNG. "CALCULATION OF THE INTENSITY-DEPENDENT ABSORPTION SPECTRUM IN TWO-DIMENSIONAL ELECTRON SYSTEMS." Modern Physics Letters B 25, no. 11 (May 10, 2011): 863–72. http://dx.doi.org/10.1142/s0217984911026061.

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General analytic expression for the intensity-dependent absorption coefficient (IDAC) of an intense electromagnetic wave (IEMW) in two-dimensional electron systems (2DES) is obtained by using the quantum kinetic equation (QKE) for electrons in the case of electron–optical phonon scattering in a doped semiconductor superlattice (DSSL). The dependence of IDAC on the amplitude E0 and the photon energy ℏΩ of an IEMW, the energy ℏωp and the temperature for a specific n-i-p-i superlattice of GaAs : Si / GaAs : Be is achieved due to a numerical method. The computational results show that not only the dependence of IDAC on ℏΩ but also the dependence of IDAC on ℏωp can be applied to optically detect the electric subbands in a DSSL.
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CHEBOTAREV, ANDREY, and GALINA CHEBOTAREVA. "CYCLOTRON RESONANCE VANISHING EFFECT AND THz DETECTION." International Journal of High Speed Electronics and Systems 18, no. 04 (December 2008): 959–69. http://dx.doi.org/10.1142/s0129156408005916.

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Experimental measurements of photoresistivity under terahertz (THz) radiation in low magnetic fields at conditions of cyclotron resonance (CR) in two-dimensional electron system (2DES) of GaAs / AlGaAs nanostructures are presented and discussed. We report the experimental discovery of "CR-vanishing effect" (CRV) in GaAs / AlGaAs heterostructures with high mobility as a well-defined gap on CR-line that is independent on incident THz power. Our analysis shows that the CRV may appear in systems with well correlated state of 2D electrons such as plasma waves and others. Fundamental nature of these correlated states of electrons in 2DES is discussed. Future THz detectors utilizing the new correlated states in 2DES may expand horizons for supersensitive detection in sub-THz and THz frequencies ranges.
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Cangas, R., and M. A. Hidalgo. "Influence of the Spin–Orbit Interaction on the Magnetotransport Properties of a Two-Dimensional Electron System." SPIN 05, no. 03 (September 2015): 1530003. http://dx.doi.org/10.1142/s2010324715300030.

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In this paper, we review the contribution of the Rashba spin–orbit coupling to the magnetoconduction of a two-dimensional electron system (2DES) confined in an inversion layer under quantum Hall regime (low temperature and low defects and impurities). The study is based on a semi-classical model for the magnetoconductivities of the 2DES. This model reproduces the measurements of the Shubnikov-de Haas (SdH) oscillations obtained in systems confined in III–V heterostructures, and also the quantum Hall magnetoconductivity (magnetoresistivity). We also discuss the Rashba and Zeeman competition and its effect on the magnetoconductivity.
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MORGENSTERN, MARKUS. "PROBING THE LOCAL DENSITY OF STATES OF DILUTE ELECTRON SYSTEMS IN DIFFERENT DIMENSIONS." Surface Review and Letters 10, no. 06 (December 2003): 933–62. http://dx.doi.org/10.1142/s0218625x0300575x.

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Scanning tunneling spectroscopy at T = 6 K is used to investigate the local density of states (LDOS) of electron systems belonging to the bulk conduction band of InAs. In particular, the three-dimensional electron system (3DES) of the n-doped material, an adsorbate-induced two-dimensional electron system (2DES) and the tip-induced quantum dot (0DES) are investigated at B = 0 T and B = 6 T. It is found that the 3DES at B = 0 T can be described by Bloch states weakly interacting with the potential disorder provided by ionized dopants. The 2DES at B = 0 T exhibits much stronger LDOS corrugations, stressing the tendency for weak localization in the potential disorder. In a magnetic field, 3DES and 2DES show drift states, which are expected in 2D, but are surprising in 3D, where they point to a new electron phase consisting of droplets of quasi-2D systems. The 0DES at B = 0 T reveals quantized states in accordance with Hartree calculations. At B = 6 T it exhibits Landau states with exchange enhanced spin splitting. These states are used to investigate the influence of potential disorder on the exchange enhancement, which visualizes the nonlocality of the exchange interaction.
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BAENNINGER, MATTHIAS, ARINDAM GHOSH, MICHAEL PEPPER, HARVEY E. BEERE, IAN FARRER, and DAVID A. RITCHIE. "MAGNETIC FIELD INDUCED INSTABILITIES IN LOCALIZED TWO-DIMENSIONAL ELECTRON SYSTEMS." International Journal of Modern Physics B 23, no. 12n13 (May 20, 2009): 2708–12. http://dx.doi.org/10.1142/s0217979209062232.

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The results of extensive transport studies in localized regime of mesoscopic two-dimensional electron systems (2DES) with varying disorder are presented. A quick overview of previously achieved result is given. The main focus is on the observation of density dependent instabilities manifested by strong resistance oscillations induced by high perpendicular magnetic fields B⊥. While the amplitude of the oscillations is strongly enhanced with increasing B⊥, their position in electron density remains unaffected. The temperature dependence of resistivity shows a transition from an activated behaviour at high temperature to a saturated behaviour at low T. In the positions of resistance minima, the T dependence can even become metal-like (dρ/dT > 0). The activation energies obtained from the high T behaviour exhibit a formation of plateaux in connection with the resistance oscillations when analyzed as a function of electron density. We suggest the interplay between a strongly interacting electron phase and the background disorder as a possible explanation for our observation.
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DOHI, M., R. YONAMINE, K. OTO, and K. MURO. "POTENTIAL IMAGING IN QUANTUM HALL DEVICES BY OPTICAL FIBER BASED POCKELS MEASUREMENT." International Journal of Modern Physics B 21, no. 08n09 (April 10, 2007): 1414–18. http://dx.doi.org/10.1142/s0217979207042926.

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We have developed an optical-fiber-based Hall potential imaging system using the Pockels effect in GaAs/AlGaAs two dimensional electron systems (2DES) in the quantum Hall regime to investigate current distributions. The mapping of the Hall potential shows the current concentration at the bulk region of 2DES samples, where the critical current depends on the channel width sub-linearly. We report in detail the experimental techniques of the imaging system operating in high magnetic fields.
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Dissertations / Theses on the topic "Two Dimensional Electron Systems (2DES)"

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Rödel, Tobias. "Two-dimensional electron systems in functional oxides studied by photoemission spectroscopy." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLS197/document.

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De nombreux oxydes de métaux de transition (TMOs) possèdent des propriétés physiques complexes (ferroélectricité, magnétisme, supraconductivité à haute Tc ou magnétorésistance colossale). Les différents degrés de liberté (le réseau, la charge, le spin ou l'ordre orbitalaire) interagissent pour donner des phases différentes, très proches en énergie, qui vont former une grande variété d'états fondamentaux accessibles. La possibilité de fabriquer des hétérostructures de TMOs a encore accru la complexité de ces systèmes, de nouveaux phénomènes apparaissant aux interfaces. Un exemple typique est le gaz d'électrons bidimensionnel (2DEG) créé à l'interface entre deux oxydes isolants, LaAlO3 et SrTiO3, qui montre une transition métal-isolant, du magnétisme ou de la supraconductivité (contrôlée par une tension de grille). Le point de départ de cette thèse a été la découverte d'un 2DEG similaire à la surface nue de SrTiO3 fracturée sous vide, rendant possible l'étude de sa structure électronique par photoémission angulaire.Dans cette thèse, l'étude de surfaces préparées, plutôt que de petites facettes fracturées, a permis l'obtention de données spectroscopiques possédant des largeurs de raie proches des valeurs intrinsèques. Il est alors possible d'étudier les effets à N corps comme la renormalisation de la self-énergie due à l'interaction électron-phonon.Ces recherches sur la structure électronique du 2DEG à la surface de SrTiO3 ont pris un tour nouveau lorsqu'une texture de spin complexe y a été mesurée par photoémission résolue en spin. Nous présentons des résultats qui contredisent ces conclusions et nous discutons des raisons pouvant expliquer ce désaccord.Une des motivations de cette thèse était de savoir si la structure électronique et les propriétés du 2DEG pouvaient être contrôlées. L'étude du 2DEG sur des surfaces (110) et (111) de SrTiO3 révèle que sa structure de bandes (ordre orbitalaire, symétrie de la surface de Fermi, masses effectives) peut être ajustée en confinant les électrons sur des surfaces de différentes orientations du même matériau.Un succès majeure est la mise en évidence de 2DEGs à la surface de nombreux autres TMOs (TiO2-anatase, CaTiO3, BaTiO3) ou d'oxydes plus simples utilisés dans les applications (ZnO). Dans tous ces oxydes, nous avons identifié les lacunes en oxygène comme étant à l'origine de la création des 2DEGs.Dans l'anatase, ou d'autres TMOs en configuration électronique initiale d0, les lacunes en oxygène produisent à la fois des électrons localisés ou itinérants (le 2DEG). Il peut être subtile de prévoir quel est le cas est le plus favorable énergétiquement comme le démontre l'étude de deux polymorphes de TiO2, anatase et rutile. Dans CaTiO3, l’octaèdre formé par les atomes d'oxygène autour du Ti est incliné. Cette rupture de symétrie provoque un mélange des orbitales d et modifie le 2DEG. Dans BaTiO3, la création d'un 2DEG entraîne la coexistence de deux phénomènes normalement incompatibles, la ferroélectricité et la métallicité, dans deux zones spatialement distinctes du même matériau. Ce travail démontre qu'un 2DEG existe aussi à la surface de ZnO qui est, contrairement aux oxydes à base de Ti, plutôt un semiconducteur conventionnel, le caractère des orbitales pour les électrons itinérants étant alors de type s et non de type d.Le principal résultat est la mise au point d'une méthode simple et versatile pour la création de 2DEGs en évaporant de l'aluminium sur des surfaces d'oxydes. Une réaction d'oxydo-réduction entre le métal et l'oxyde permet de créer un 2DEG à l'interface entre le métal oxydé et l'oxyde réduit. Dans cette thèse, les 2DEGs ont été étudiés uniquement par photoémission sous ultra-vide. Cette méthode ouvre la possibilité d'étudier ces 2DEGs dans des conditions de pression ambiante en utilisant, par exemple, des techniques de transport, un pas important vers la production de masse et à bas coûts de 2DEGs dans les oxydes pour de futures applications
Many transition metal oxides (TMOs) show complex physics, ranging from ferroelectricity to magnetism, high-Tc superconductivity and colossal magnetoresistance. The existence of a variety of ground states often occurs as different degrees of freedom (e.g. lattice, charge, spin, orbital) interact to form different competing phases which are quite similar in energy. The capability to epitaxially grow heterostructures of TMOs increased the complexity even more as new phenomena can emerge at the interface. One typical example is the two-dimensional electron system (2DES) at the interface of two insulating oxides, namely LaAlO3/SrTiO3, which shows metal-to-insulator transitions, magnetism or gate-tunable superconductivity. The origin of this thesis was the discovery of a similar 2DES at the bare surface of SrTiO3 fractured in vacuum, making it possible to study its electronic structure by angle-resolved photoemission spectroscopy (ARPES).In this thesis, the study of well-prepared surfaces, instead of small fractured facets, results in spectroscopic data showing line widths approaching the intrinsic value. This approach allows a detailed analysis of many-body phenomena like the renormalization of the self-energy due to electron-phonon interaction.Additionally, the understanding of the electronic structure of the 2DES at the surface of SrTiO3(001) was given an additional turn by the surprising discovery of a complex spin texture measured by spin-ARPES. In this thesis data is presented which contradicts these conclusions and discusses possible reasons for the discrepancy.One major motivation of this thesis was the question if and how the electronic structure and the properties of the 2DES can be changed or controlled. In this context, the study of 2DESs at (110) and (111) surface revealed that the electronic band structure of the 2DES (orbital ordering, symmetry of the Fermi surface, effective masses) can be tuned by confining the electrons at different surface orientations of the same material, namely SrTiO3.A major achievement of this thesis is the generalization of the existence of a 2DES in SrTiO3 to many other surfaces and interfaces of TMOs (TiO2 anatase, CaTiO3, BaTiO3) and even simpler oxides already used in modern applications (ZnO). In all these oxides, we identify oxygen vacancies as the origin for the creation of the 2DESs.In anatase and other doped d0 TMOs, both localized and itinerant electrons (2DES) can exist due to oxygen vacancies. Which of the two cases is energetically favorable depends on subtle differences as demonstrated by studying two polymorphs of the same material (anatase and rutile).In CaTiO3, the oxygen octahedron around the Ti ion is slightly tilted. This symmetry breaking results in the mixing of different d-orbitals demonstrating again why and how the electronic structure of the 2DES can be altered.In BaTiO3, the creation of a 2DES results in the coexistence of the two, usually mutual exclusive, phenomena of ferroelectricity and metallicity in the same material by spatially separating the two.Moreover, this work demonstrates that the 2DES also exists in ZnO which is - compared to the Ti-based oxides - rather a conventional semiconductor as the orbital character of the itinerant electrons is of s and not d-type.The main result of this thesis is the demonstration of a simple and versatile technique for the creation of 2DESs by evaporating Al on oxide surfaces. A redox reaction between metal and oxide results in a 2DES at the interface of the oxidized metal and the reduced oxide. In this thesis the study of such interfacial 2DESs was limited to photoemission studies in ultra high vacuum. However, this technique opens up the possibility to study 2DESs in functional oxides in ambient conditions by e.g. transport techniques, and might be an important step towards cost-efficient mass production of 2DESs in oxides for future applications
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Yoon, Hosang. "Two-Dimensional Plasmonics in Massive and Massless Electron Gases." Thesis, Harvard University, 2014. http://nrs.harvard.edu/urn-3:HUL.InstRepos:13070026.

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Plasmonic waves in solid-state are caused by collective oscillation of mobile charges inside or at the surface of conductors. In particular, surface plasmonic waves propagating at the skin of metals have recently attracted interest, as they reduce the wavelength of electromagnetic waves coupled to them by up to ~10 times, allowing one to create miniaturized wave devices at optical frequencies. In contrast, plasmonic waves on two-dimensional (2D) conductors appear at much lower infrared and THz-GHz frequencies, near or in the electronics regime, and can achieve far stronger wavelength reduction factor reaching well above 100. In this thesis, we study the unique machinery of 2D plasmonic waves behind this ultra-subwavelength confinement and explore how it can be used to create various interesting devices. To this end, we first develop a physically intuitive theoretical formulation of 2D plasmonic waves, whose two main components---the Coulomb restoration force and inertia of the collectively oscillating charges---are combined into a transmission-line-like model. We then use this formulation to create various ultra-subwavelength 2D plasmonic devices. For the 2D conductor, we first choose GaAs/AlGaAs heterostructure---a 2D electron gas consisting of massive (m*>0) electrons---demonstrating plasmonic bandgap crystals, interferometers, and negatively refracting metamaterials. We then examine a 2D plasmonic device based on graphene, a 2D electron gas consisting of effectively massless (m*=0) electrons. We theoretically show and experimentally demonstrate that the massless electrons in graphene can surprisingly exhibit a collective mass when subjected to a collective excitation, providing the inertia that is essential for the propagation of 2D plasmonic waves. Lastly, we theoretically investigate the thermal current fluctuation behaviors in massive and massless electron gases. While seemingly unrelated on first sight, we show that the thermal current fluctuation is actually intimately linked to the collective mass of the massive or massless electron gas. Thus, we show that the thermal current fluctuation behaviors can also be described by the same theoretical framework introduced earlier, suggesting a possibility to design new concept devices and experiments based on this linkage.
Engineering and Applied Sciences
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Nahm, In Hyun. "Two dimensional disordered electron systems." Thesis, University of Southampton, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.330179.

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Madhavi, S. "Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures." Thesis, Indian Institute of Science, 2000. https://etd.iisc.ac.in/handle/2005/294.

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Modulation doped heterostructures have revolutionized the operation of field effect devices by increasing the speed of operation. One of the factors that affects the speed of operation of these devices is the mobility of the carriers, which is intrinsic to the material used. Mobility of electrons in silicon based devices has improved drastically over the years, reaching as high as 50.000cm2/Vs at 4.2K and 2600cm2/Vs at room temperature. However, the mobility of holes in p-type silicon devices still remains comparatively lesser than the electron mobility because of large effective masses and complicated valence band structure involved. Germanium is known to have the largest hole mobility of all the known semiconductors and is considered most suitable to fabricate high speed p-type devices. Moreover, it is also possible to integrate germanium and its alloy (Si1_zGex ) into the existing silicon technology. With the use of sophisticated growth techniques it has been possible to grow epitaxial layers of silicon and germanium on Si1_zGex alloy layers grown on silicon substrates. In tills thesis we investigate in detail the electrical properties of p-type germanium and n-type silicon thin films grown by these techniques. It is important to do a comparative study of transport in these two systems not only to understand the physics involved but also to study their compatibility in complementary field effect devices (cMODFET). The studies reported in this thesis lay emphasis both on the low and high field transport properties of these systems. We report experimental data for the maximum room temperature mobility of holes achieved m germanium thin films grown on Si1_zGex layers that is comparable to the mobility of electrons in silicon films. We also report experiments performed to study the high field degradation of carrier mobility due to "carrier heating" in these systems. We also report studies on the effect of lattice heating on mobility of carriers as a function of applied electric field. To understand the physics behind the observed phenomenon, we model our data based on the existing theories for low and high field transport. We report complete numerical calculations based on these theories to explain the observed qualitative difference in the transport properties of p-type germanium and ii-type silicon systems. The consistency between the experimental data and theoretical modeling reported in this work is very satisfactory.
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Madhavi, S. "Carrier Mobility And High Field Transport in Modulation Doped p-Type Ge/Si1-xGex And n-Type Si/Si1-xGex Heterostructures." Thesis, Indian Institute of Science, 2000. http://hdl.handle.net/2005/294.

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Modulation doped heterostructures have revolutionized the operation of field effect devices by increasing the speed of operation. One of the factors that affects the speed of operation of these devices is the mobility of the carriers, which is intrinsic to the material used. Mobility of electrons in silicon based devices has improved drastically over the years, reaching as high as 50.000cm2/Vs at 4.2K and 2600cm2/Vs at room temperature. However, the mobility of holes in p-type silicon devices still remains comparatively lesser than the electron mobility because of large effective masses and complicated valence band structure involved. Germanium is known to have the largest hole mobility of all the known semiconductors and is considered most suitable to fabricate high speed p-type devices. Moreover, it is also possible to integrate germanium and its alloy (Si1_zGex ) into the existing silicon technology. With the use of sophisticated growth techniques it has been possible to grow epitaxial layers of silicon and germanium on Si1_zGex alloy layers grown on silicon substrates. In tills thesis we investigate in detail the electrical properties of p-type germanium and n-type silicon thin films grown by these techniques. It is important to do a comparative study of transport in these two systems not only to understand the physics involved but also to study their compatibility in complementary field effect devices (cMODFET). The studies reported in this thesis lay emphasis both on the low and high field transport properties of these systems. We report experimental data for the maximum room temperature mobility of holes achieved m germanium thin films grown on Si1_zGex layers that is comparable to the mobility of electrons in silicon films. We also report experiments performed to study the high field degradation of carrier mobility due to "carrier heating" in these systems. We also report studies on the effect of lattice heating on mobility of carriers as a function of applied electric field. To understand the physics behind the observed phenomenon, we model our data based on the existing theories for low and high field transport. We report complete numerical calculations based on these theories to explain the observed qualitative difference in the transport properties of p-type germanium and ii-type silicon systems. The consistency between the experimental data and theoretical modeling reported in this work is very satisfactory.
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Oxley, John Paul. "Thermopower in two dimensional electron systems." Thesis, University of Nottingham, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.293657.

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Siegert, Christoph. "Disorder effects in two dimensional electron systems." Thesis, University of Cambridge, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.612312.

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Peck, Andrew John. "Lateral tunnelling in two-dimensional electron systems." Thesis, University of Bath, 1994. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.385345.

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Yeung, Yan Mui Kitty. "Engineering Plasmonic Waves in Two-Dimensional Electron Systems." Thesis, Harvard University, 2015. http://nrs.harvard.edu/urn-3:HUL.InstRepos:17467363.

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Plasmonic waves are waves of mobile charge carriers caused by their collective oscillations. They can be excited in solid-state conducting materials and behave distinctively in different numbers of dimensions. With fabrication technologies available for solid-state materials, one can functionalize the dimensional properties by engineering the boundaries and interfaces of the plasmonic wave medium. For instance, plasmonic waves in two-dimensional (2D) conductors, such as semiconductor heterojunction and graphene, exhibit strong subwavelength confinement – with a wavelength about a factor of 100 below the electromagnetic wavelength at the same frequency. Hence, 2D plasmonic devices can be constructed below the diffraction limit of light. To utilize this ultra-subwavelength confinement is the main motivation of this thesis. This thesis establishes the machinery behind the unique behaviors of 2D plasmons, and compares them to plasmons in higher dimensions, namely plasma oscillations in bulk materials and surface plasmons on conducting-insulating interfaces. The Coulomb restoring force and mobile charge carrier inertia causing the collective oscillations are formulated into a transmission-line model. This formulation is used to engineer ultra-subwavelength plasmonic circuits in gigahertz integrated electronics and terahertz metamaterials. As one of the demonstration platforms, we use GaAs/AlGaAs 2D electron gas. Amongst a variety of devices, the thesis focuses on an on-chip solid-state 2D plasmonic Mach-Zehnder interferometer operating at microwave frequencies. The gated 2D plasmonic waves achieve a velocity of ~c/300 (c: free-space speed of light). Due to this ultra-subwavelength confinement, the resolution of the 2D plasmonic interferometer is two orders of magnitude higher than that of its electromagnetic counterpart at a given frequency. Another material we use, which hosts mobile charge carriers in 2D, is graphene. We fabricate metamaterials in the form of graphene plasmonic crystals in a continuous graphene sheet with periodic structural perturbations. Plasmonic bands in the far-infrared are formed and excited via symmetry-based selection rules, in a manner akin to photonic crystals. The plasmonic bands can be engineered by manipulating the charge carrier concentration, the dimensions of the periodic lattice, the shape of the perturbation and the lattice symmetry. These demonstrations may generate new avenues for a wealth of subwavelength graphene plasmonic devices, such as band gap filters, modulators and switches.
Engineering and Applied Sciences - Applied Physics
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Li, Hongtao. "Electron-electron correlations and lattice frustration in quasi-two-dimensional systems." Diss., The University of Arizona, 2011. http://hdl.handle.net/10150/202769.

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Strong electron-electron correlations and lattice frustration are two physical interactions that pose serious challenges to condensed matter physics. A variety of exotic physical phenomena, for example, charge ordering, spin liquid, and unconventional superconductivity, are believed to arise from the interplay of the two interactions. In this dissertation, I examine two families of systems which exhibit both electron-electron correlations and lattice frustration – charge transfer solids and layered cobaltates. The half-filled band Hubbard model on the triangular lattice has been proposed by mean-field theories as the minimal model for the superconductivity in the charge transfer solids. In the first part of this dissertation, by using exact calculations, I prove the absence of superconductivity in this model. This result calls for a new theoretical approach to describe the rich physics in charge transfer solids. In the second part of this dissertation, I study charge transfer solids by focusing on its real bandfilling ¼. I show that a new kind of insulating phase, paired electron crystal, emerges from antiferromagnetism as the frustration is increased. The paired electron crystal state can explain the various insulating states adjacent to the superconducting state, thus provides a new avenue towards the understanding of the unconventional superconductivity in charge transfer solids and other ¼ filled systems. In the third part of this dissertation, I investigate the carrier concentration-dependent electronic behavior in layered cobaltates. I provide a natural yet simple explanation for this behavior. I show that it can be described within correlated-electron Hamiltonians with finite on-site and significant nearest neighbor hole-hole Coulomb repulsions. I also point out the similarities between organic charge transfer solids and layered cobaltates, which may involve superconductivity.
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Books on the topic "Two Dimensional Electron Systems (2DES)"

1

Andrei, Eva Y., ed. Two-Dimensional Electron Systems. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-015-1286-2.

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Scheuzger, Peter Daniel. Unconventional magnetoresistance of two-dimensional and three-dimensional electron systems. Konstanz: Hartung-Gorre, 1995.

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Andrei, Eva Y. Two-Dimensional Electron Systems: On Helium and other Cryogenic Substrates. Dordrecht: Springer Netherlands, 1997.

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Y, Andrei Eva, ed. Two-dimensional electron systems on helium and other cryogenic substrates. Dordrecht: Kluwer Academic Publishers, 1997.

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Winkler, Roland. Spin--Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/b13586.

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Winkler, Roland. Spin-orbit coupling effects in two-dimensional electron and hole systems. Berlin: Springer, 2003.

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Two-Dimensional Electron Systems of Dielectric Materials. World Scientific Pub Co Inc, 1994.

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Two-Dimensional Electron Systems: On Helium and other Cryogenic Substrates. Springer, 2012.

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Andrei, E. Y. Two-Dimensional Electron Systems: On Helium And Other Cryogenic Substrates. Springer, 2011.

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Winkler, Roland. Spin-Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems. Springer, 2003.

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Book chapters on the topic "Two Dimensional Electron Systems (2DES)"

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Baer, Stephan, and Klaus Ensslin. "Two-Dimensional Electron Gases." In Transport Spectroscopy of Confined Fractional Quantum Hall Systems, 9–20. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-21051-3_2.

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Monarkha, Yuriy, and Kimitoshi Kono. "Two-Dimensional Interface Electron Systems." In Springer Series in Solid-State Sciences, 1–63. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-10639-6_1.

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Dietsche, W. "Electron-Phonon Interaction in Two-Dimensional Electron Gases." In Condensed Systems of Low Dimensionality, 327–34. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4684-1348-9_25.

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Eisenstein, J. P. "Compressibility of the Interacting Two-Dimensional Electron Gas." In Low-Dimensional Electronic Systems, 167–76. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84857-5_15.

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Lassnig, Rudolf. "k.p Theory for Two – Dimensional Systems." In The Physics of the Two-Dimensional Electron Gas, 259–91. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1907-8_8.

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Kent, A. J. "Phonon Imaging in Two-Dimensional Electron Systems." In Springer Series in Solid-State Sciences, 351–56. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-84888-9_138.

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Green, M., and M. Pollak. "Electrode Screening of Two Dimensional Disordered Systems." In New Horizons in Low-Dimensional Electron Systems, 155–67. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-3190-2_10.

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Aoki, Hideo. "Two-Band Models for Superconductivity." In New Horizons in Low-Dimensional Electron Systems, 261–80. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-3190-2_18.

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Troyer, Matthias. "Universality in Two-Dimensional Quantum Heisenberg Antiferromagnets." In Open Problems in Strongly Correlated Electron Systems, 193–202. Dordrecht: Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-010-0771-9_20.

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Platzman, Philip M. "Interactions in 2–D Electron Systems." In The Physics of the Two-Dimensional Electron Gas, 97–130. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1907-8_4.

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Conference papers on the topic "Two Dimensional Electron Systems (2DES)"

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Bar-Ad, S., I. Bar-Joseph, Y. Levinson, and H. Shtrikman. "Coherent Optical Spectroscopy of Electron Scattering in a Two Dimensional Electron Gas in High Magnetic Fields." In International Conference on Ultrafast Phenomena. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/up.1994.tue.4.

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Coherent optical spectroscopy has emerged as an important experimental tool in the study of carrier dynamics in semiconductor quantum wells (QWs). Numerous studies of exciton dynamics have shown that the coherent nonlinear interaction in intrinsic QWs could be described in most cases by a simple two level system model. A more complex behavior is expected in modulation doped (MD) structures, where the interaction between the photo-excited electron-hole pairs and the two-dimensional electron gas (2DEG) is important.
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Klitzing, K. v., J. Smet, I. Kukuchkin, S. A. Mikhailov, and C. Jiang. "Two-dimensional electron systems under microwave radiation." In >2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics. IEEE, 2006. http://dx.doi.org/10.1109/icimw.2006.368211.

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Yamaguchi, H. "InAs-based Micromechanical Two-dimensional Electron Systems." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994566.

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Yamaguchi, H., H. Okamoto, Y. Maruta, S. Ishihara, S. Miyashita, and Y. Hirayama. "Mechanically detected electron energy dissipation in two-dimensional electron systems." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2729999.

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Yar, Abdullah, and Kashif Sabeeh. "Radiation Effects on Electron Dynamics in Two-Dimensional Electron Systems." In 14th Regional Conference on Mathematical Physics. WORLD SCIENTIFIC, 2018. http://dx.doi.org/10.1142/9789813224971_0032.

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Zarezin, A. M., P. A. Gusikhin, V. M. Muravev, and I. V. Kukushkin. "Relativistic plasma excitations in two-dimensional electron systems." In 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz). IEEE, 2021. http://dx.doi.org/10.1109/irmmw-thz50926.2021.9567491.

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Beletskii, N. N., and S. A. Borisenko. "Electromagnetic polaritons in double two-dimensional electron systems." In 1999 9th International Crimean Microwave Conference 'Microwave and Telecommunication Technology'. Conference Proceedings. IEEE, 1999. http://dx.doi.org/10.1109/crmico.1999.815247.

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Lei, X. L. "Radiation-induced magnetoresistance oscillations in two-dimensional electron systems." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730002.

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Lei, X. L. "Radiation-induced magnetoresistance oscillations in two-dimensional electron systems." In >2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics. IEEE, 2006. http://dx.doi.org/10.1109/icimw.2006.368735.

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KISHINE, JUN-ICHIRO, NOBUO FURUKAWA, and KENJI YONEMITSU. "TWO-LOOP RENORMALIZATION OF THE QUASIPARTICLE WEIGHT IN TWO-DIMENSIONAL ELECTRON SYSTEMS." In Proceedings of the 10th International Conference. WORLD SCIENTIFIC, 2000. http://dx.doi.org/10.1142/9789812792754_0013.

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Reports on the topic "Two Dimensional Electron Systems (2DES)"

1

MacDonald, Allan, and Qian Niu. Manipulating magnetism and excitonic states in quasi-two-dimensional electron systems. Office of Scientific and Technical Information (OSTI), May 2021. http://dx.doi.org/10.2172/1782866.

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Rezayi, Edward. Numerical Studies of Collective Phenomena in Two-Dimensional Electron and Cold Atom Systems. Office of Scientific and Technical Information (OSTI), July 2013. http://dx.doi.org/10.2172/1088513.

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Quinn, John. Final Report - Composite Fermion Approach to Strongly Interacting Quasi Two Dimensional Electron Gas Systems. Office of Scientific and Technical Information (OSTI), November 2009. http://dx.doi.org/10.2172/1054786.

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Report on DOE Proposal ''Electronic Transport in Disordered Two Dimensional Electron Systems''. Office of Scientific and Technical Information (OSTI), March 2004. http://dx.doi.org/10.2172/825011.

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