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Journal articles on the topic 'Tunnel junctions'

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Author: Grafiati

Published: 4 June 2021

Last updated: 30 July 2024

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1

Da Costa, Victor, and M. Romeo. "Disorder Effects on Tunneling Junctions." Advances in Science and Technology 52 (October 2006): 116–20. http://dx.doi.org/10.4028/www.scientific.net/ast.52.116.

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This paper illustrates statistical properties of tunnel currents flowing through metalinsulator- metal tunnel junctions. A direct experiment performed on a metal-oxide junction shows that the tunnel current follows broad statistical distributions extending over more than 4 orders of magnitude. A simple lognormal law is proposed to explain the properties of currents flowing through tunnel junctions.

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2

Miao, Xiujuan, Kan He, Guglielmo Minelli, Jie Zhang, Guangjun Gao, Hongliang Wei, Maosheng He, and Sinisa Krajnovic. "Aerodynamic Performance of a High-Speed Train Passing through Three Standard Tunnel Junctions under Crosswinds." Applied Sciences 10, no. 11 (May 26, 2020): 3664. http://dx.doi.org/10.3390/app10113664.

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The aerodynamic performance of a high-speed train passing through tunnel junctions under severe crosswind condition was numerically investigated using improved delayed detached-eddy simulations (IDDES). Three ground scenarios connected with entrances and exits of tunnels were considered. In particular a flat ground, an embankment, and a bridge configuration were used. The numerical method was first validated against experimental data, showing good agreement. The results show that the ground scenario has a large effect on the train’s aerodynamic performance. The bridge case resulted in generally smaller drag and lift, as well as a lower pressure coefficient on both the train body and the inner tunnel wall, as compared to the tunnel junctions with flat ground and embankment. Furthermore, the bridge configuration contributed to the smallest pressure variation in time in the tunnel. Overall, the study gives important insights on complicated tunnel junction scenarios coupled with severe flow conditions, that, to the knowledge of the authors, were not studied before. Beside this, the results can be used for further improvements in the design of tunnels where such crosswind conditions may occur.

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3

Shevchenko M. S., Filippenko L. V., Kiselev O. S., and Koshelets V. P. "Josephson tunnel junctions with integral SIN shunting." Physics of the Solid State 64, no. 9 (2022): 1217. http://dx.doi.org/10.21883/pss.2022.09.54154.38hh.

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This work is devoted to the study of tunnel Josephson superconductor-insulator-superconductor (SIS) junctions with a new type of shunting based on the usage of an additional superconductor-insulator-normal metal (NIS) junction located around the SIS junction. Numerical calculations of the parameters of such shunted junctions were carried out and modeling of their IVC (current-voltage characteristics) was performed. The designed samples were manufactured, their parameters were studied. To investigate the behavior of junctions under the influence of high-frequency signals in the sub-THz range, their IVCs were measured. Keywords: Superconducting devices, superconductor-insulator-superconductor tunnel junction, Josephson effect, shunting of Josephson junctions.

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4

Chekushkin A. M., Filippenko L. V., Fominskiy M. Yu., and Koshelets V. P. "Fabrication of High-Quality Josephson Junctions Based on Nb|Al-AlN|NbN." Physics of the Solid State 64, no. 10 (2022): 1382. http://dx.doi.org/10.21883/pss.2022.10.54222.49hh.

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A description of the fabrication technology of high-quality tunnel SIS junctions is presented, with following characteristics: energy gap in superconductors Vg=3.2-3.4 mV, tunnel current density up to J 35 kA/cm2, quality factor Rj/Rn (ratio of subgap resistance to normal-state resistance) up to 30, junction area up to 1 μm2. The SIS junctions are integrated into the NbTiN|SiO2|Al microstrip line. Keywords: superconducting devices, superconductor--insulator--superconductor tunnel junction, plasma etching.

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5

Colter, Peter, Brandon Hagar, and Salah Bedair. "Tunnel Junctions for III-V Multijunction Solar Cells Review." Crystals 8, no. 12 (November 28, 2018): 445. http://dx.doi.org/10.3390/cryst8120445.

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Tunnel Junctions, as addressed in this review, are conductive, optically transparent semiconductor layers used to join different semiconductor materials in order to increase overall device efficiency. The first monolithic multi-junction solar cell was grown in 1980 at NCSU and utilized an AlGaAs/AlGaAs tunnel junction. In the last 4 decades both the development and analysis of tunnel junction structures and their application to multi-junction solar cells has resulted in significant performance gains. In this review we will first make note of significant studies of III-V tunnel junction materials and performance, then discuss their incorporation into cells and modeling of their characteristics. A Recent study implicating thermally activated compensation of highly doped semiconductors by native defects rather than dopant diffusion in tunnel junction thermal degradation will be discussed. AlGaAs/InGaP tunnel junctions, showing both high current capability and high transparency (high bandgap), are the current standard for space applications. Of significant note is a variant of this structure containing a quantum well interface showing the best performance to date. This has been studied by several groups and will be discussed at length in order to show a path to future improvements.

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6

GOKCE, AISHA, RYAN STEARRETT, E. R. NOWAK, and C. NORDMAN. "SHOT NOISE SUPPRESSION IN INDIVIDUAL AND SERIES ARRAYS OF MAGNETIC TUNNEL JUNCTIONS." Fluctuation and Noise Letters 10, no. 04 (December 2011): 381–94. http://dx.doi.org/10.1142/s0219477511000648.

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Charge-current shot noise is investigated in single magnetic tunnel junctions and devices having multiple junctions that are connected in series. The ratio of the measured shot noise in single junctions to the expected Poisson value, namely the Fano factor, F, is observed to vary from 1 to well below 0.5. Deviations from F = 1 are attributed to localized states (defects) located in the tunnel barrier or at the interfaces with the magnetic electrodes. For series arrays of junctions, the Fano factor scales inversely with the number (1 ≤ N ≤ 30) of junctions in series, even for junctions exhibiting sub-Poissonian (F < 1) shot noise. The 1/N scaling is consistent with the incoherent tunneling of electrons across junctions and indicates that each junction behaves as an individual noise source. The advantages of incorporating series arrays of magnetic tunnel junctions into devices for magnetic field sensing are discussed.

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7

Villegier, J., L. Vieux-Rochaz, M. Goniche, P. Renard, and M. Vabre. "NbN tunnel junctions." IEEE Transactions on Magnetics 21, no. 2 (March 1985): 498–504. http://dx.doi.org/10.1109/tmag.1985.1063861.

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8

Zhu, Jian-Gang (Jimmy), and Chando Park. "Magnetic tunnel junctions." Materials Today 9, no. 11 (November 2006): 36–45. http://dx.doi.org/10.1016/s1369-7021(06)71693-5.

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9

Yin, Yue-Wei, Muralikrishna Raju, Wei-Jin Hu, Xiao-Jun Weng, Ke Zou, Jun Zhu, Xiao-Guang Li, Zhi-Dong Zhang, and Qi Li. "Multiferroic tunnel junctions." Frontiers of Physics 7, no. 4 (August 2012): 380–85. http://dx.doi.org/10.1007/s11467-012-0266-8.

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10

Apachitei, Geanina, Jonathan J. P. Peters, Ana M. Sanchez, Dong Jik Kim, and Marin Alexe. "Antiferroelectric Tunnel Junctions." Advanced Electronic Materials 3, no. 7 (May 15, 2017): 1700126. http://dx.doi.org/10.1002/aelm.201700126.

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11

Lobkova M. D., Skirdkov P. N., and Zvezdin K. A. "Magnetic tunnel junction model in Verilog-A for use in CAD environments for integrated circuits." Physics of the Solid State 65, no. 6 (2023): 911. http://dx.doi.org/10.21883/pss.2023.06.56100.06h.

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Electrical model of a magnetic tunnel junction is developed in Verilog-A language, which can use in CAD systems to design an integrated circuit of spintronics devices. In order to check the correct operation of the model verification tests were created and carried out in Cadence ADE. Each test corresponds to the operating mode of the magnetic tunnel junction: switching, generation, rectification. Thus, the developed model can be used to simulate hybrid circuits comprising CMOS elements and magnetic tunnel junctions. Keywords: magnetic tunnel junction, MTJ, spintronics, spintronics devices, magnetic tunnel junction model in Verilog-A, MTJ model development, MTJ operating modes.

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12

Dominic Merwin Xavier, Agnes Maneesha, Arnob Ghosh, Sheikh Ifatur Rahman, Andrew Allerman, Shamsul Arafin, and Siddharth Rajan. "Design and demonstration of efficient transparent 30% Al-content AlGaN interband tunnel junctions." Applied Physics Letters 122, no. 8 (February 20, 2023): 081108. http://dx.doi.org/10.1063/5.0122919.

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Ultra-violet (UV) light emitting diodes operating at 339 nm using transparent interband tunnel junctions are reported. Tunneling-based ultraviolet light emitting diodes were grown by plasma-assisted molecular beam epitaxy on 30% Al-content AlGaN layers. A low tunnel junction voltage drop is obtained through the use of compositionally graded n and p-type layers in the tunnel junction, which enhance hole density and tunneling rates. The transparent tunnel junction-based UV LED reported here show a low voltage drop of 5.55 V at 20 A/cm2 and an on-wafer external quantum efficiency of 1.02% at 80 A/cm2.

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13

Chigarev, S. G., E. M. Epshtein, I. V. Malikov, G. M. Mikhailov, and P. E. Zilberman. "Tunnel Magnetoresistance of Fe3O4/MgO/Fe Nanostructures." ISRN Condensed Matter Physics 2011 (October 15, 2011): 1–3. http://dx.doi.org/10.5402/2011/826941.

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A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel magnetoresistance is calculated as a function of the external magnetic field. In contrast with junctions with unidirectional anisotropy, a substantially lower magnetic field is required for the junction switching.

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14

Jamal-Eddine, Zane, Yuewei Zhang, and Siddharth Rajan. "Recent Progress in III-Nitride Tunnel Junction-Based Optoelectronics." International Journal of High Speed Electronics and Systems 28, no. 01n02 (March 2019): 1940012. http://dx.doi.org/10.1142/s0129156419400123.

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Tunnel junctions have garnered much interest from the III-Nitride optoelectronic research community within recent years. Tunnel junctions have seen applications in several material systems with relatively narrow bandgaps as compared to the III-Nitrides. Although they were initially dismissed as ineffective for commercial device applications due to high voltage penalty and on resistance owed to the wide bandgap nature of the III-Nitride material systems, recent development in the field has warranted further study of such tunnel junction enabled devices. They are of particular interest for applications in III-Nitride optoelectronic devices in which they can be used to enable novel device designs which could potentially address some of the most challenging physical obstacles presented with this unique material system. In this work we review the recent progress made on the study of III-Nitride tunnel junction-based optoelectronic devices and the challenges which are still faced in the field of study today.

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15

Ju, Yongho “Sungtaek.” "Nanoscale Thermal Phenomena in Tunnel Junctions for Spintronics Applications." Journal of Electronic Packaging 128, no. 2 (December 5, 2005): 109–14. http://dx.doi.org/10.1115/1.2165215.

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The nascent field of spintronics has great potential to enable new types of information processing and storage devices and supplement conventional semiconductor electronics. An overview of nanoscale thermal phenomena in a tunnel junctions is provided, which is one of the key building blocks of spintronic devices. Experiments showed that the thermal resistance of nanoscale AlOx tunnel barriers increases linearly with thickness, which is consistent with the theory of energy transport in highly disordered materials. Heat conduction across a tunnel junction is impeded by significant additional resistance at interfaces between the barrier layer and electrodes due to mismatch in atomic vibrational properties and nonequilibrium between electrons and phonons. The quantum-mechanical tunneling probability depends strongly on electron energy, which leads to asymmetry in heat-generation rate along the two opposing electrodes of a tunnel junction.

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16

Лобкова, М. Д., П. Н. Скирдков, and К. А. Звездин. "Модель магнитного туннельного перехода на Verilog-A для использования в средах автоматизированного проектирования интегральных схем." Физика твердого тела 65, no. 6 (2023): 951. http://dx.doi.org/10.21883/ftt.2023.06.55649.06h.

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Electrical model of a magnetic tunnel junction is developed in Verilog-A language, which can use in CAD systems to design an integrated circuit of spintronics devices. In order to check the correct operation of the model verification tests were created and carried out in Cadence ADE. Each test corresponds to the operating mode of the magnetic tunnel junction: switching, generation, rectification. Thus, the developed model can be used to simulate hybrid circuits comprising CMOS elements and magnetic tunnel junctions.

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17

ANSARINO, MASOUD, BAHRAM ABEDI RAVAN, and YADOLLAH AHMADIZADEH. "CALCULATION OF ELECTRICAL SWITCHING AND MAGNETORESISTIVE PROPERTIES OF MOLECULAR TUNNEL JUNCTIONS." Modern Physics Letters B 26, no. 31 (November 2, 2012): 1250206. http://dx.doi.org/10.1142/s0217984912502065.

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Switching properties of metal/polymer/metal junctions is studied under application of twist using a combination of the tight-binding and nonequilibrium Green function calculations. The junction is taken to be composed of a short chain of cis-polyacetylene sandwiched between two ferromagnetic electrodes. It is shown that the current flow across the polymer can effectively be controlled by torsion applied through rotating the the electrodes about the junction's axis. It is found out that twisting the polymer leads to widening of its HUMO–LOMO energy gap which, in consequence, hinders the electron tunneling. The ferromagnetic electrodes are assumed to be single-band and their tight-binding parameters are chosen so as to simulate the ab initio density functional calculations of the band structure of Fe along its [001] crystallographic direction. According to our calculations it is also possible to adjust tunneling magnetoresistance of the junction by applying specific amounts of torsion.

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18

Fukushima, Akio, Kay Yakushiji, Hitoshi Kubota, Hiroshi Imamura, and Shinji Yuasa. "Development of “spin dice” — A Scalable Random Number Generator Based on Spin-Torque Switching." SPIN 09, no. 03 (May 20, 2019): 1940009. http://dx.doi.org/10.1142/s2010324719400095.

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We have developed a random-number-generator (RNG) named “spin dice,” which employs the stochastic nature of spin-torque switching (STS) in a magnetic tunnel junction. The principle of the idea is that the switching probability first tuned around 0.5 is varied linearly with the applied current. After that, the switching results are converted into binary random numbers. We fabricated several types of “spin dice” by combining magnetic tunnel junctions and single-board microcomputer, and achieved generation speed of random numbers up to several hundred kbit/sec. Because STS is scalable and magnetic tunnel junctions have compatibility to semiconductor fabrication process, “spin dice” can be considered as a promising candidate for truly random-number-generator (TRNG) for security applications.

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19

Inomata, Koichiro. "Hybrid Type Tunnel Junctions." Materia Japan 37, no. 9 (1998): 741–44. http://dx.doi.org/10.2320/materia.37.741.

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20

Monaco, Roberto. "Superelliptic Josephson Tunnel Junctions." Journal of Low Temperature Physics 188, no. 1-2 (April 6, 2017): 49–63. http://dx.doi.org/10.1007/s10909-017-1776-0.

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21

Bai, Haili, and Enyong Jiang. "Magnetic tunnel junctions (MTJs)." Chinese Science Bulletin 46, no. 9 (May 2001): 709–16. http://dx.doi.org/10.1007/bf03187205.

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22

Cucolo, A. M., M. Cuoco, and C. Noce. "d-Wave Tunnel Junctions." International Journal of Modern Physics B 13, no. 09n10 (April 20, 1999): 1295–99. http://dx.doi.org/10.1142/s0217979299001338.

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We study the tunneling spectra for superconductor-insulator-normal metal (S-I-N) tunnel junctions with an s -wave or a d -wave superconductor within the weak-coupling model. We deduce the temperature behavior of tunneling conductance and their peak positions as well as of the zero-bias conductance. The results obtained allow us to discriminate among the two singlet spin states.

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23

Francis, Jaismon, S. A. Bassam, and C. S. Suchand Sangeeth. "Importance of impedance spectroscopy in self-assembled monolayer-based large-area tunnel junctions." Journal of Physics D: Applied Physics 55, no. 7 (November 9, 2021): 075301. http://dx.doi.org/10.1088/1361-6463/ac30fc.

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Abstract Two-terminal direct current (DC) measurements are generally used for the electrical characterization of self-assembled monolayer (SAM)-based large-area tunnel junctions. In DC measurements, the total current through the molecular junction is measured and it is thus impossible to separate molecular effects from interface effects. The charge transport parameters are derived indirectly from the current–voltage relationship. For instance, contact resistance at the interface between the electrode and SAMs is estimated by extrapolating the resistance versus chain length curve. On the other hand, through impedance spectroscopy along with equivalent circuit modelling, each component of the junction can be determined. This paper compares the contact resistance values estimated using both DC and impedance spectroscopic data of alkanethiolate SAM-based molecular junctions reported previously. We show that in the case of molecular tunnel junctions with a resistive protective layer (PL), the widely used DC measurements alone fail to show the actual molecular behaviour of the junction as the charge transport through the junction is dominated by the PL itself. We also show that contact resistance estimated from the DC measurements on defective SAM junctions can be wrong and leads to the incorrect transport mechanism, while the impedance measurements estimate the actual values of contact resistance and identify the bottlenecks in charge transport through such a defective molecular junction.

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24

DAS, MOUSUMI. "ELECTRON TRANSFER THROUGH NON-HYDROGEN AND HYDROGEN BONDED INTERMOLECULAR TUNNEL JUNCTIONS: A COMPUTATIONAL STUDY." Journal of Theoretical and Computational Chemistry 11, no. 05 (October 2012): 997–1004. http://dx.doi.org/10.1142/s0219633612500666.

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The nature of electron transfer through intermolecular tunnel junctions has been studied. Intermolecular junctions feature non-hydrogen and hydrogen bonded interactions and are defined by the end groups of pairs of functionalized conjugated alkenes. We compared the distant dependent electron transfer from donor to acceptor group attached to the other sides of those functionalized conjugated alkenes. Study shows electron transfer coupling matrix element for these intermolecular junctions decays exponentially as a function of junction separation and quite substantial in energetically favourable hydrogen bonded intermolecular junctions.

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25

Шевченко, М. С., Л. В. Филиппенко, О. С. Киселев, and В. П. Кошелец. "Джозефсоновские туннельные переходы с интегральным СИН-шунтированием." Физика твердого тела 64, no. 9 (2022): 1223. http://dx.doi.org/10.21883/ftt.2022.09.52809.38hh.

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This work is devoted to the study of tunnel Josephson superconductor-insulator-superconductor (SIS) junctions with a new type of shunting based on the usage of an additional superconductor-insulator-normal metal (NIS) junction located around the SIS junction. Numerical calculations of the parameters of such shunted junctions were carried out and modeling of their IVC (current-voltage characteristics) was performed. The designed samples were manufactured, their parameters were studied. To investigate the behavior of junctions under the influence of high-frequency signals in the sub-THz range, their IVCs were measured.

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26

Ventura, João, A. Pereira, José M. Teixeira, João P. Araújo, Francisco Carpinteiro, João Bessa Sousa, Y. Liu, Z. Zhang, and Paulo Freitas. "Heat Generation in Tunnel Junctions for Current-Written Pinned Layer Switching." Materials Science Forum 514-516 (May 2006): 323–27. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.323.

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To commute between the different resistance states of a magnetic tunnel junction (TJ) one can use a thermally-induced pinned layer switching mechanism. When a sufficiently high electrical current flows through the insulating barrier, local temperatures inside the tunnel junction can increase above the blocking temperature of the antiferromagnetic layer used to pin the magnetization of the adjacent ferromagnet. Then, it is possible to switch the magnetization of the pinned layer with a small magnetic field H and thus revert the magnetic state of the TJ. Here we demonstrate thermally-induced pinned layer switching in thin magnetic tunnel junctions. We further present numerical results that suggest that heating is small when one takes into consideration the uniform current density flowing through the tunnel junction and that one must conclude that nanoconstrictions concentrate most of the current, increasing local current densities and temperature. Simulation of heating and cooling times demonstrates that current-induced pinned layer switching is a competitive mechanism for actual technological applications.

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27

Gou, Yudan, Jun Wang, Yang Cheng, Yintao Guo, Xiao Xiao, Heng Liu, Shaoyang Tan, et al. "Experimental and Modeling Study on the High-Performance p++-GaAs/n++-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted." Crystals 10, no. 12 (November 28, 2020): 1092. http://dx.doi.org/10.3390/cryst10121092.

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The development of high-performance tunnel junctions is critical for achieving high efficiency in multi-junction solar cells (MJSC) that can operate at high concentrations. We investigate silicon and tellurium co-doping of InGaAs quantum well inserts in p++-GaAs/n++-GaAs tunnel junctions and report a peak current density as high as 5839 A cm−2 with a series resistance of 5.86 × 10−5 Ω cm2. In addition, we discuss how device performance is affected by the growth temperature, thickness, and V/III ratio in the InGaAs layer. A simulation model indicates that the contribution of trap-assisted tunneling enhances carrier tunneling.

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28

Dawidowski, Wojciech, Beata Šciana, Iwona Zborowska-Lindert, Miroslav Mikolášek, Magdalena Latkowska, Damian Radziewicz, Damian Pucicki, et al. "AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell." International Journal of Electronics and Telecommunications 60, no. 2 (June 1, 2014): 151–56. http://dx.doi.org/10.2478/eletel-2014-0018.

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Abstract Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most effective photovoltaic devices. Record efficiency of the MJSCs exceeds 44% under concentrated sunlight. Individual subcells connected in series by tunnel junctions are crucial components of these devices. In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) of InGaAsN based subcell for InGaAsN/GaAs tandem solar cell. The parameters of epitaxial structure (optical and electrical), fabrication process of the test solar cell devices and current-voltage (J-V) characteristics are presented and discussed.

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29

Chen, Lan Li, Ming Ji Shi, and Jia Hui Yu. "Good Quality N (a-Si)-P+(Na-Si)-P (μC-Si) Tunnel Junction for Tandem Solar Cells." Solid State Phenomena 181-182 (November 2011): 336–39. http://dx.doi.org/10.4028/www.scientific.net/ssp.181-182.336.

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A new tunnel-recombination junction model was proposed to increase the recombination of n/p junctions in tandem solar cells. According to the model, we fabricated a new tunnel junction with a nanostructured amorphous silicon p+(na-Si p+) layer inserted between the n layer and the p layer. To compare with the conventional method, we fabricated another tunnel junction with an amorphous p+(a-Si p+) insertion layer. Both devices were characterized by their dark current-voltage behavior (I-V), activation energy (Ea) and quantum efficiency (QE). The result shows that the tunnel junction with a na-Si p+insertion layer has higher recombination rates with higher density of defect states of about 2.7×1019cm-3, lower resistance with activation energy of 22meV. The tunnel junction with a na-Si p+insertion layer could be easily integrated into the tandem solar cell deposition process.

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30

Khachaturova, T. A. "Volt-Ampere Characteristics of Tunnel Junctions from Ferromagnetic Materials." Advanced Materials & Technologies, no. 3 (2017): 047–50. http://dx.doi.org/10.17277/amt.2017.03.pp.047-050.

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31

Feng Yuanjia, 冯源佳, 郑钧升 Zheng Junsheng, 杨若雪 Yang Ruoxue, and 王攀 Wang Pan. "等离激元隧道结（特邀）." Laser & Optoelectronics Progress 61, no. 3 (2024): 0324001. http://dx.doi.org/10.3788/lop232668.

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32

Shen, Xiaomi, Caihong Jia, and Weifeng Zhang. "Fast Bienenstock–Cooper–Munro rule with tunable threshold realized in ferroelectric tunnel junction for neuromorphic computing." Applied Physics Letters 122, no. 5 (January 30, 2023): 053501. http://dx.doi.org/10.1063/5.0137339.

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Ferroelectric tunnel junctions remain great prospects for neuromorphic computing due to their significant nondestructive readout and ultra-low-energy consumption. In this work, versatile synaptic functions including paired-pulse facilitation, paired-pulse depression, spike-rate-dependent plasticity, and Bienenstock–Cooper–Munro learning rules have been simulated by electrical stimulation in ferroelectric tunnel junctions of the Au/La0.1Bi0.9FeO3/Nb:SrTiO3/In system. A potentiation at high frequency and a depression at low frequency are found under positive bias, while an opposite behavior is observed at negative bias. Furthermore, a fast Bienenstock–Cooper–Munro learning rule in nanosecond order with the sliding threshold rate and enhanced depression effect is demonstrated by only applying a series of presynaptic pulse trains. These findings provide a method for simulating fast Bienenstock–Cooper–Munro learning rules based on ferroelectric tunnel junction.

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33

Khan, Muhammad Farooq, Hakseong Kim, Ghazanfar Nazir, Suyong Jung, and Jonghwa Eom. "Layer dependent magnetoresistance of vertical MoS2 magnetic tunnel junctions." Nanoscale 10, no. 35 (2018): 16703–10. http://dx.doi.org/10.1039/c8nr04518f.

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Vertical spin valve junctions consisting of MoS₂ layers have been fabricated by ultraclean fabrication method. The magnetoresistance of the spin valve junction increases as the thickness of MoS₂ layer is increased.

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34

Mehrparvar, Dariush, Nader Ghobadi, and Reza Daqiq. "Effect of spin-orbit coupling within the spin-filter layer on the tunnel magneto-resistance in spin-filter magnetic tunnel junctions." Physica Scripta 98, no. 9 (August 14, 2023): 095924. http://dx.doi.org/10.1088/1402-4896/acecba.

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Abstract The tunnel magneto-resistance ratio is investigated for spin-filter magnetic tunnel junctions in the presence of spin–orbit coupling within a spin-filter layer. The non-equilibrium Green’s function formalism is utilized to calculate the transmission function in the linear-response limit. The results show that a larger tunnel magneto-resistance is achieved for spin-filter magnetic tunnel junctions compared to that for conventional magnetic tunnel junctions due to the existence of a spin-filter layer. Therefore, the current findings can be introduced new routes to improve the field of spintronics.

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35

Malisa, Anayesu B. "Josephson Effect in MgB2/Pd/Nb Trilayer Josephson Junctions." Tanzania Journal of Science 47, no. 3 (August 14, 2021): 1062–72. http://dx.doi.org/10.4314/tjs.v47i3.17.

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This paper reports fabrication techniques and results of MgB2/Pd/Nb trilayer Josephson junctions. The MgB2 bottom electrode was co-evaporated by molecular beam epitaxy (MBE) technique from both magnesium and boron sources at a low substrate temperature ~ 300 °C, while the interlayer and the top niobium electrode (Pd/Nb bilayer) were deposited ex-situ using RF sputtering. The junctions exhibited and Josephson effect as well as a modulation of the critical current in a magnetic field applied in a direction normal to the junction plane. Fractional and integer Shapiro steps were observed at voltages corresponding to the frequency of the applied microwave radiation field. The products of the junctions compare well with the previously reported values. The results suggest that it should be possible to fabricate all-MgB2 and MgB2 as one of the electrodes Superconductor/Normal/Superconductor (SNS), Superconductor/Insulator/Superconductor (SIS) or even Superconductor/Ferromagnet/Superconductor (SFS) tunnel junctions with interesting characteristics and for various applications. Keywords: MgB2; all-MgB2; Josephson Tunnel junctions; trilayer devices; Niobium

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36

Калиновский, В. С., Е. В. Контрош, Г. В. Климко, С. В. Иванов, В. С. Юферев, Б. Я. Бер, Д. Ю. Казанцев, and В. М. Андреев. "Разработка и исследование туннельных p-i-n-диодов GaAs/AlGaAs для многопереходных преобразователей мощного лазерного излучения." Физика и техника полупроводников 54, no. 3 (2020): 285. http://dx.doi.org/10.21883/ftp.2020.03.49034.9298.

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Fabrication of connecting tunnel diodes with high peak tunnel current density exceeding the short-circuit current density of photoactive p−n junctions is an important task in development of multi-junction III−V photovoltaic converters of high-power optical radiation. Based on the results of a numerical simulation of tunnel diode current−voltage characteristics, a method is suggested for raising the peak tunnel current density by connecting a thin undoped i-type layer with thickness of several nanometers between the degenerate layers of a tunnel diode. The method of molecular-beam epitaxy was used to grow p−i−n GaAs/Al0.2Ga0.8As structures of connecting tunnel diodes with peak tunnel current density of up to 200A/cm2 .

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37

Das, J., R. Degraeve, H. Boeve, P. Duchamps, L. Lagae, G. Groeseneken, G. Borghs, and J. De Boeck. "Tunnel barrier properties of stressed ferromagnetic tunnel junctions." Electronics Letters 37, no. 6 (2001): 356. http://dx.doi.org/10.1049/el:20010262.

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38

Tiusan, C., T. Dimopoulos, K. Ounadjela, M. Hehn, H. A. M. van den Berg, V. da Costa, and Y. Henry. "Tunnel magnetoresistance versus micromagnetism in magnetic tunnel junctions." Journal of Applied Physics 87, no. 9 (May 2000): 4676–78. http://dx.doi.org/10.1063/1.373127.

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39

Massarotti, D., H. G. Ahmad, R. Satariano, R. Ferraiuolo, L. Di Palma, P. Mastrovito, G. Serpico, et al. "A feasible path for the use of ferromagnetic josephson junctions in quantum circuits: The ferro-transmon." Low Temperature Physics 49, no. 7 (July 1, 2023): 794–802. http://dx.doi.org/10.1063/10.0019690.

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We discuss the capabilities of ferromagnetic (F) Josephson junctions (JJs) in a variety of layouts and configurations. The main goal is to demonstrate the potential of these hybrid JJs to disclose new physics and the possibility to integrate them in superconducting classical and quantum electronics for various applications. The feasible path towards the use of ferromagnetic Josephson junctions in quantum circuits starts from experiments demonstrating macroscopic quantum tunneling in NbN/GdN/NbN junctions with ferro-insulator barriers and with triplet components of the supercurrent, supported by a self-consistent electrodynamic characterization as a function of the barrier thickness. This has inspired further studies on tunnel ferromagnetic junctions with a different layout and promoted the first generation of ferromagnetic Al-based JJs, specifically Al/AlOx/Al/Py/Al. This layout takes advantage of the capability to integrate the ferromagnetic layer in the junction without affecting the quality of the superconducting electrodes and of the tunnel barrier. The high quality of the devices paves the way for the possible implementation of Al tunnel-ferromagnetic JJs in superconducting quantum circuits. These achievements have promoted the notion of a novel type of qubit incorporating ferromagnetic JJs. This qubit is based on a transmon design featuring a tunnel JJ in parallel with a ferromagnetic JJ inside a SQUID loop capacitively coupled to a superconducting readout resonator. The effect of an external RF field on the magnetic switching processes of ferromagnetic JJs has been also investigated.

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40

Arena, G., M. G. Castellano, R. Leoni, G. Torrioli, and P. Carelli. "Sub-Micron Normal-Insulator-Superconductor Tunnel Junctions for Sensitive Thermometry and Micro-Refrigerators." International Journal of Modern Physics B 13, no. 09n10 (April 20, 1999): 1241–46. http://dx.doi.org/10.1142/s0217979299001247.

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We report on measurements of normal-insulator-superconductor tunnel junctions at temperatures below 1K. The junctions have been fabricated by shadow mask technique and e-beam lithography and have submicron dimensions. The measurements on our junctions show that their characteristics are very sensitive to temperature changes making them suitable to be used as a sensitive secondary thermometer. To demonstrate this we use this tunnel structure for sensing the electron temperature drop in a copper strip of an electronic micro-refrigerator, that was made by arrays of tunnel junctions, as well.

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41

Mao, H. J., C. Song, L. R. Xiao, S. Gao, B. Cui, J. J. Peng, F. Li, and F. Pan. "Unconventional resistive switching behavior in ferroelectric tunnel junctions." Physical Chemistry Chemical Physics 17, no. 15 (2015): 10146–50. http://dx.doi.org/10.1039/c5cp00421g.

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42

Sheldon, Forrest, Sebastiano Peotta, and Massimiliano Di Ventra. "Phase-dependent noise in Josephson junctions." European Physical Journal Applied Physics 81, no. 1 (January 2018): 10601. http://dx.doi.org/10.1051/epjap/2017170297.

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In addition to the usual superconducting current, Josephson junctions (JJs) support a phase-dependent conductance related to the retardation effect of tunneling quasi-particles. This introduces a dissipative current with a memory-resistive (memristive) character that should also affect the current noise. By means of the microscopic theory of tunnel junctions we compute the complete current autocorrelation function of a Josephson tunnel junction and show that this memristive component gives rise to both a previously noted phase-dependent thermal noise, and an undescribed non-stationary, phase-dependent dynamic noise. As experiments are approaching ranges in which these effects may be observed, we examine the form and magnitude of these processes. Their phase dependence can be realized experimentally as a hysteresis effect and may be used to probe defects present in JJ based qubits and in other superconducting electronics applications.

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43

DAI, C. J., X. H. YAN, Y. XIAO, J. R. YUAN, M. X. BI, and J. S. LIU. "EFFECTS OF THE MIXED Cu/O LAYER ON THE TRANSPORT PROPERTIES OF Cu/EuO-BASED TUNNEL JUNCTIONS." Surface Review and Letters 24, no. 08 (December 2017): 1750120. http://dx.doi.org/10.1142/s0218625x17501207.

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The spin-dependent transport properties of Cu/EuO-based tunnel junctions are investigated by means of the first-principle calculations combined with the non-equilibrium Green’s function (NEGF) method. It is found that the Cu/EuO-based junctions exhibit excellent spin-filtering effect. Furthermore, the mixed Cu/O layer enhances the tunneling of the majority spin through the EuO barrier for the junctions with Cu/O layers due to the fact that the valance-band maximum of the Eu-4[Formula: see text] states shifts to high energies with respect to the Fermi level for these junctions. These results permit the existence of the mixed Cu/O layer in Cu/EuO-based tunnel junctions and promote future applications of these tunnel junctions in spintronic devices.

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44

Xu, Huifen, Minhua Fan, Senzu Yang, and Peiheng Wu. "Chaos in superconducting tunnel junctions." Journal of Applied Physics 78, no. 11 (December 1995): 6664–69. http://dx.doi.org/10.1063/1.360487.

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45

Tsymbal, E. Y., A. Gruverman, V. Garcia, M. Bibes, and A. Barthélémy. "Ferroelectric and multiferroic tunnel junctions." MRS Bulletin 37, no. 2 (February 2012): 138–43. http://dx.doi.org/10.1557/mrs.2011.358.

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46

Chapline, Michael G., and Shan X. Wang. "Spin filter based tunnel junctions." Journal of Applied Physics 100, no. 12 (December 15, 2006): 123909. http://dx.doi.org/10.1063/1.2382720.

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47

Ueda, K., S. Saito, K. Semba, T. Makimoto, and M. Naito. "All-MgB2 Josephson tunnel junctions." Applied Physics Letters 86, no. 17 (April 25, 2005): 172502. http://dx.doi.org/10.1063/1.1920411.

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48

Koski, J. V., J. T. Peltonen, M. Meschke, and J. P. Pekola. "Laterally proximized aluminum tunnel junctions." Applied Physics Letters 98, no. 20 (May 16, 2011): 203501. http://dx.doi.org/10.1063/1.3590922.

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49

Li, X. W., Yu Lu, G. Q. Gong, Gang Xiao, A. Gupta, P. Lecoeur, J. Z. Sun, Y. Y. Wang, and V. P. Dravid. "Epitaxial La0.67Sr0.33MnO3 magnetic tunnel junctions." Journal of Applied Physics 81, no. 8 (April 15, 1997): 5509–11. http://dx.doi.org/10.1063/1.364585.

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50

Gallagher, W. J., S. S. P. Parkin, Yu Lu, X. P. Bian, A. Marley, K. P. Roche, R. A. Altman, et al. "Microstructured magnetic tunnel junctions (invited)." Journal of Applied Physics 81, no. 8 (April 15, 1997): 3741–46. http://dx.doi.org/10.1063/1.364744.

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