Relevant bibliographies by topics / Tunnel junctions

Academic literature on the topic 'Tunnel junctions'

Author: Grafiati
Published: 4 June 2021
Last updated: 30 July 2024

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Journal articles on the topic "Tunnel junctions"

1

Da Costa, Victor, and M. Romeo. "Disorder Effects on Tunneling Junctions." Advances in Science and Technology 52 (October 2006): 116–20. http://dx.doi.org/10.4028/www.scientific.net/ast.52.116.

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This paper illustrates statistical properties of tunnel currents flowing through metalinsulator- metal tunnel junctions. A direct experiment performed on a metal-oxide junction shows that the tunnel current follows broad statistical distributions extending over more than 4 orders of magnitude. A simple lognormal law is proposed to explain the properties of currents flowing through tunnel junctions.
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Miao, Xiujuan, Kan He, Guglielmo Minelli, Jie Zhang, Guangjun Gao, Hongliang Wei, Maosheng He, and Sinisa Krajnovic. "Aerodynamic Performance of a High-Speed Train Passing through Three Standard Tunnel Junctions under Crosswinds." Applied Sciences 10, no. 11 (May 26, 2020): 3664. http://dx.doi.org/10.3390/app10113664.

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The aerodynamic performance of a high-speed train passing through tunnel junctions under severe crosswind condition was numerically investigated using improved delayed detached-eddy simulations (IDDES). Three ground scenarios connected with entrances and exits of tunnels were considered. In particular a flat ground, an embankment, and a bridge configuration were used. The numerical method was first validated against experimental data, showing good agreement. The results show that the ground scenario has a large effect on the train’s aerodynamic performance. The bridge case resulted in generally smaller drag and lift, as well as a lower pressure coefficient on both the train body and the inner tunnel wall, as compared to the tunnel junctions with flat ground and embankment. Furthermore, the bridge configuration contributed to the smallest pressure variation in time in the tunnel. Overall, the study gives important insights on complicated tunnel junction scenarios coupled with severe flow conditions, that, to the knowledge of the authors, were not studied before. Beside this, the results can be used for further improvements in the design of tunnels where such crosswind conditions may occur.
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Shevchenko M. S., Filippenko L. V., Kiselev O. S., and Koshelets V. P. "Josephson tunnel junctions with integral SIN shunting." Physics of the Solid State 64, no. 9 (2022): 1217. http://dx.doi.org/10.21883/pss.2022.09.54154.38hh.

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This work is devoted to the study of tunnel Josephson superconductor-insulator-superconductor (SIS) junctions with a new type of shunting based on the usage of an additional superconductor-insulator-normal metal (NIS) junction located around the SIS junction. Numerical calculations of the parameters of such shunted junctions were carried out and modeling of their IVC (current-voltage characteristics) was performed. The designed samples were manufactured, their parameters were studied. To investigate the behavior of junctions under the influence of high-frequency signals in the sub-THz range, their IVCs were measured. Keywords: Superconducting devices, superconductor-insulator-superconductor tunnel junction, Josephson effect, shunting of Josephson junctions.
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Chekushkin A. M., Filippenko L. V., Fominskiy M. Yu., and Koshelets V. P. "Fabrication of High-Quality Josephson Junctions Based on Nb|Al-AlN|NbN." Physics of the Solid State 64, no. 10 (2022): 1382. http://dx.doi.org/10.21883/pss.2022.10.54222.49hh.

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A description of the fabrication technology of high-quality tunnel SIS junctions is presented, with following characteristics: energy gap in superconductors Vg=3.2-3.4 mV, tunnel current density up to J 35 kA/cm2, quality factor Rj/Rn (ratio of subgap resistance to normal-state resistance) up to 30, junction area up to 1 μm2. The SIS junctions are integrated into the NbTiN|SiO2|Al microstrip line. Keywords: superconducting devices, superconductor--insulator--superconductor tunnel junction, plasma etching.
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Colter, Peter, Brandon Hagar, and Salah Bedair. "Tunnel Junctions for III-V Multijunction Solar Cells Review." Crystals 8, no. 12 (November 28, 2018): 445. http://dx.doi.org/10.3390/cryst8120445.

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Tunnel Junctions, as addressed in this review, are conductive, optically transparent semiconductor layers used to join different semiconductor materials in order to increase overall device efficiency. The first monolithic multi-junction solar cell was grown in 1980 at NCSU and utilized an AlGaAs/AlGaAs tunnel junction. In the last 4 decades both the development and analysis of tunnel junction structures and their application to multi-junction solar cells has resulted in significant performance gains. In this review we will first make note of significant studies of III-V tunnel junction materials and performance, then discuss their incorporation into cells and modeling of their characteristics. A Recent study implicating thermally activated compensation of highly doped semiconductors by native defects rather than dopant diffusion in tunnel junction thermal degradation will be discussed. AlGaAs/InGaP tunnel junctions, showing both high current capability and high transparency (high bandgap), are the current standard for space applications. Of significant note is a variant of this structure containing a quantum well interface showing the best performance to date. This has been studied by several groups and will be discussed at length in order to show a path to future improvements.
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GOKCE, AISHA, RYAN STEARRETT, E. R. NOWAK, and C. NORDMAN. "SHOT NOISE SUPPRESSION IN INDIVIDUAL AND SERIES ARRAYS OF MAGNETIC TUNNEL JUNCTIONS." Fluctuation and Noise Letters 10, no. 04 (December 2011): 381–94. http://dx.doi.org/10.1142/s0219477511000648.

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Charge-current shot noise is investigated in single magnetic tunnel junctions and devices having multiple junctions that are connected in series. The ratio of the measured shot noise in single junctions to the expected Poisson value, namely the Fano factor, F, is observed to vary from 1 to well below 0.5. Deviations from F = 1 are attributed to localized states (defects) located in the tunnel barrier or at the interfaces with the magnetic electrodes. For series arrays of junctions, the Fano factor scales inversely with the number (1 ≤ N ≤ 30) of junctions in series, even for junctions exhibiting sub-Poissonian (F < 1) shot noise. The 1/N scaling is consistent with the incoherent tunneling of electrons across junctions and indicates that each junction behaves as an individual noise source. The advantages of incorporating series arrays of magnetic tunnel junctions into devices for magnetic field sensing are discussed.
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Villegier, J., L. Vieux-Rochaz, M. Goniche, P. Renard, and M. Vabre. "NbN tunnel junctions." IEEE Transactions on Magnetics 21, no. 2 (March 1985): 498–504. http://dx.doi.org/10.1109/tmag.1985.1063861.

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Zhu, Jian-Gang (Jimmy), and Chando Park. "Magnetic tunnel junctions." Materials Today 9, no. 11 (November 2006): 36–45. http://dx.doi.org/10.1016/s1369-7021(06)71693-5.

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Yin, Yue-Wei, Muralikrishna Raju, Wei-Jin Hu, Xiao-Jun Weng, Ke Zou, Jun Zhu, Xiao-Guang Li, Zhi-Dong Zhang, and Qi Li. "Multiferroic tunnel junctions." Frontiers of Physics 7, no. 4 (August 2012): 380–85. http://dx.doi.org/10.1007/s11467-012-0266-8.

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Apachitei, Geanina, Jonathan J. P. Peters, Ana M. Sanchez, Dong Jik Kim, and Marin Alexe. "Antiferroelectric Tunnel Junctions." Advanced Electronic Materials 3, no. 7 (May 15, 2017): 1700126. http://dx.doi.org/10.1002/aelm.201700126.

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Dissertations / Theses on the topic "Tunnel junctions"

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Wong, Pak Kin. "Magnetic tunnel junctions." Thesis, University of Cambridge, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.624388.

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Pal, Avradeep. "Spin filter tunnel junctions." Thesis, University of Cambridge, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708243.

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Almasi, Hamid, and Hamid Almasi. "Perpendicular Magnetic Tunnel Junctions with MgO Tunnel Barrier." Diss., The University of Arizona, 2017. http://hdl.handle.net/10150/626332.

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Spintronics discusses about fundamental physics and material science in mostly nanometer size structures. Spintronics also delivers many promising technologies for now and the future. One of the interesting spintronic structures is called “Magnetic Tunnel junction” (MTJ). A typical MTJ consists of a thin (1-3nm) insulator layer sandwiched between two ferromagnetic layers. In this work, I present MTJ with perpendicular magnetic anisotropy (PMA) using an MgO tunnel barrier. The effect of different heavy metals (HMs) adjacent to the ferromagnets (FMs) on tunneling magnetoresistance (TMR) and PMA of the junctions are discussed. Namely, Ta, Mo, Ta/Mo, W, Ir, and Hf have been utilized in HM/FM/MgO structures, and magneto-transport properties are explored. It is shown that when Ta/Mo is employed, TMR values as high as 208%, and highly thermally stable PMA can be obtained. Some physical explanation based on electronic band structure and thermochemical effects are discussed. In the last part of this work, the newly discovered tunneling anisotropic magnetoresistance (TAMR) effect in antiferromagnets is studied, and clear TAMR is demonstrated for NiFe/IrMn/MgO/Ta structures.
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Malec, Christopher Evan. "Transport in graphene tunnel junctions." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/41140.

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It has been predicted that gold, aluminum, and copper do not fundamentally change the graphene band structure when they are in close proximity to graphene, but merely increase the doping. My data confirms this prediction, as well as explores other consequences of the metal/graphene interface. First, I present a technique to fabricate thin oxide barriers between graphene and aluminum and copper to create tunnel junctions and directly probe graphene in close proximity to a metal. I map the differential conductance of the junctions versus tunnel probe and back gate voltage, and observe mesoscopic fluctuations in the conductance that are directly related to the graphene density of states. I develop a simple theory of tunneling into graphene to extract experimental numbers, such as the doping level of the graphene, and take into account the electrostatic gating of graphene by the tunneling probe. Next, results of measurements in magnetic fields will also be discussed, including evidence for incompressible states in the Quantum Hall regime wherein an electron is forced to tunnel between a localized state and an extended state that is connected to the lead. The physics of this system is similar to that encountered in Single Electron Transistors, and some work in this area will be reviewed. Finally, another possible method of understanding the interface between a metal and graphene through transport is presented. By depositing disconnected gold islands on graphene, I am able to measure resonances in the bias dependent differential resistance, that I connect to interactions between the graphene and gold islands.
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Tanner, Shawn. "Tunnel junctions, cantilevers, and potentials." Connect to online resource, 2007. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3256388.

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Kolhatkar, Gitanjali. "Characterisation of high-efficiency multi-junction solar cells and tunnel junctions." Thesis, University of Ottawa (Canada), 2011. http://hdl.handle.net/10393/28939.

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Tunnel junctions for use in solar cells and monolithic multi junction solar cells are studied experimentally. The current density-voltage characteristic of an AlGaAs/AlGaAs tunnel junction having a mesa resistance of 0.11 mO·cm2 is determined using time-averaged measurements. A tunneling peak higher than the operating point of a solar cell is recorded by this method, with a value of ∼950 A/cm2. Due to the unstable nature of the negative differential resistance region of the current density-voltage curve, measurements of the tunneling peak and valley current densities are obscured. A time-dependent analysis is performed on this sample, from which a tunneling peak of a value larger than 1100 A/cm 2 is determined. An A1GaAs/InGaP tunnel junction having a tunneling peak of 80 A/cm2 is presented. Multi junction solar cells fabricated using indium tin-oxide as transparent top electrodes are measured. These cells have a maximal efficiency of 25.1% at 3 suns illumination and 26.1% at 20 suns, ∼40% lower efficiency than the standard multi junction solar cell.
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Weides, Martin P. "Josephson tunnel junctions with ferromagnetic interlayer." Jülich : Forschungszentrum, Zentralbibliothek, 2007. http://d-nb.info/98785433X/34.

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Weides, Martin P. "Josephson tunnel junctions with ferromagnetic interlayer." [S.l.] : [s.n.], 2006. http://deposit.ddb.de/cgi-bin/dokserv?idn=982866550.

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Kaiser, Christian. "Novel materials for magnetic tunnel junctions." kostenfrei, 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=97561388X.

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Stokes, Michael Keith. "Phonon absorption in superconducting tunnel junctions." Thesis, Lancaster University, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.497770.

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Books on the topic "Tunnel junctions"

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Contreras, Julio Rodriquez. Ferroelectric tunnel junctions. Jülich: Forschungszentrum Jülich, Institut für Festkörperforschung, 2004.

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Weides, Martin. Josephson tunnel junctions with ferromagnetic interlayer. Jülich: Forschungszentrum Jülich, Zentralbibliothek, 2007.

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L, Ash Robert, and Langley Research Center, eds. Thermal sensing of cryogenic wind tunnel model surfaces: Final report for the period May 15, 1984 to February 28, 1985. Hampton, Va: National Aeronautics and Space Administration, Langley Research Center, 1986.

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Matters, Marco. Single-electron and Cooper pair transport in circuits of small tunnel junctions. Delft: Delft University Press, 1996.

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R, Jacobson Brian, Hu Chʻing, and United States. National Aeronautics and Space Administration., eds. A low-noise micromachined millimeter-wave heterodyne mixer using Nb superconducting tunnel junctions. [Washington, DC: National Aeronautics and Space Administration, 1996.

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R, Jacobson Brian, Hu Chʻing, and United States. National Aeronautics and Space Administration., eds. A low-noise micromachined millimeter-wave heterodyne mixer using Nb superconducting tunnel junctions. [Washington, DC: National Aeronautics and Space Administration, 1996.

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R, Jacobson Brian, Hu Qing, and United States. National Aeronautics and Space Administration., eds. A low-noise micromachined millimeter-wave heterodyne mixer using Nb superconducting tunnel junctions. [Washington, DC: National Aeronautics and Space Administration, 1996.

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1939-, Barone Antonio, Cristiano Roberto, Pagano Sergio 1959-, Istituto di cibernetica, and International Workshop on "Superconducting Tunnel Junctions for X-Ray Detection (1991 : Naples, Italy), eds. X-ray detection by superconducting tunnel junctions: Proceedings of the workshop, Naples, Italy, 12-14 December 1990. Singapore: World Scientific, 1991.

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Winter, W. C. Dewstow: Impressions and recollections of childhood and the Severn Tunnel junction marshalling yards 1886-October 12th 1987. Newport: W. C. Winter, 1989.

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Canada. Parliament. House of Commons. Bill: An act respecting the Pontiac Pacific Junction Railway Company. Ottawa: S.E. Dawson, 2003.

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Book chapters on the topic "Tunnel junctions"

1

Martin, Didier D. E., and Peter Verhoeve. "Superconducting tunnel junctions." In Observing Photons in Space, 479–96. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-7804-1_27.

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Reiss, Günter, Jan Schmalhorst, Andre Thomas, Andreas Hütten, and Shinji Yuasa. "Magnetic Tunnel Junctions." In Springer Tracts in Modern Physics, 291–333. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-73462-8_6.

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Parzefall, Markus, Palash Bharadwaj, and Lukas Novotny. "Antenna-Coupled Tunnel Junctions." In Springer Series in Solid-State Sciences, 211–36. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-45820-5_10.

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Chanthbouala, A., V. Garcia, K. Bouzehouane, S. Fusil, X. Moya, S. Xavier, H. Yamada, et al. "Giant Tunnel Electroresistance in Ferroelectric Tunnel Junctions." In Frontiers in Electronic Materials, 50. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527667703.ch16.

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Reiss, Günter, Hubert Brückl, Jan Schmalhorst, and Andy Thomas. "Stability of Magnetic Tunnel Junctions." In Nanostructured Magnetic Materials and Their Applications, 91–110. Berlin, Heidelberg: Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/3-540-36872-8_6.

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Okabe, Y. "Towards Real HTS Tunnel Junctions." In Superconducting Devices and Their Applications, 28–31. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-77457-7_3.

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Sobolewski, R., D. R. Dykaar, T. Y. Hsiang, and G. A. Mourou. "Picosecond Switching in Josephson Tunnel Junctions." In Picosecond Electronics and Optoelectronics II, 177–80. Berlin, Heidelberg: Springer Berlin Heidelberg, 1987. http://dx.doi.org/10.1007/978-3-642-72970-6_37.

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Brückl, Hubert, Andy Thomas, Jörg Schotter, Jan Bornemeier, and Günter Reiss. "New Developments with Magnetic Tunnel Junctions." In Advances in Solid State Physics, 397–412. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-540-44838-9_28.

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Gundlach, K. H. "Superconducting Tunnel Junctions for Radioastronomical Receivers." In Superconducting Quantum Electronics, 175–204. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-95592-1_7.

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Mitani, Seiji. "Magnetic Tunnel Junctions Using Heusler Alloys." In Heusler Alloys, 401–12. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-21449-8_17.

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Conference papers on the topic "Tunnel junctions"

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Barone, A., R. Cristiano, and S. Pagano. "X-Ray Detection by Superconducting Tunnel Junctions." In Workshop on X-ray Detection by Superconducting Tunnel Junctions. WORLD SCIENTIFIC, 1991. http://dx.doi.org/10.1142/9789814538930.

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Moeller, C., J. Boettcher, and Harald Kuenzel. "GaAs-based tunnel junctions." In SPIE Proceedings, edited by Zhores I. Alferov and Leo Esaki. SPIE, 2002. http://dx.doi.org/10.1117/12.514616.

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Blamire, M. G., A. Pal, Z. H. Barber, and Kartik Senapati. "Spin filter superconducting tunnel junctions." In SPIE NanoScience + Engineering, edited by Henri-Jean Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2012. http://dx.doi.org/10.1117/12.928403.

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Tsymbal, Evgeny Y. "Antiferromagnetic Tunnel Junctions for Spintronics." In 2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers). IEEE, 2023. http://dx.doi.org/10.1109/intermagshortpapers58606.2023.10305006.

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Useinov, A., N. Useinov, L. Ye, T. Wu, and C. Lai. "Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles." In 2015 IEEE International Magnetics Conference (INTERMAG). IEEE, 2015. http://dx.doi.org/10.1109/intmag.2015.7157345.

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Olsson, H. K., and T. Claeson. "Parametric Amplification Using Superconducting Tunnel Junctions." In 13 Intl Conf on Infrared and Millimeter Waves, edited by Richard J. Temkin. SPIE, 1988. http://dx.doi.org/10.1117/12.978330.

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Stobiecki, Tomasz. "Magnetic tunnel junctions and their applications." In SPIE Proceedings, edited by Tadeusz Pisarkiewicz. SPIE, 2006. http://dx.doi.org/10.1117/12.721113.

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Reiss, G., J. Schmalhorst, H. Bruckl, A. Hutten, and S. Kammerer. "Heusler materials in magnetic tunnel junctions." In INTERMAG Asia 2005: Digest of the IEEE International Magnetics Conference. IEEE, 2005. http://dx.doi.org/10.1109/intmag.2005.1464367.

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Md Nor, A. F., Y. Ando, N. Mochizuki, and T. Miyazaki. "Noise properties of magnetic tunnel junctions." In INTERMAG Asia 2005: Digest of the IEEE International Magnetics Conference. IEEE, 2005. http://dx.doi.org/10.1109/intmag.2005.1464436.

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Popovic, R. S. "Thermal noise in ultrasmall tunnel junctions." In Noise in physical systems and 1/. AIP, 1993. http://dx.doi.org/10.1063/1.44555.

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Reports on the topic "Tunnel junctions"

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Cleland, A. N. Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions. Office of Scientific and Technical Information (OSTI), April 1991. http://dx.doi.org/10.2172/5511727.

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Baker, Bryan John. A Model for the Behavior of Magnetic Tunnel Junctions. Office of Scientific and Technical Information (OSTI), January 2003. http://dx.doi.org/10.2172/816449.

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Mears, Carl Atherton. Quantum-limited detection of millimeter waves using superconducting tunnel junctions. Office of Scientific and Technical Information (OSTI), September 1991. http://dx.doi.org/10.2172/10103908.

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Mears, C. A. Quantum-limited detection of millimeter waves using superconducting tunnel junctions. Office of Scientific and Technical Information (OSTI), September 1991. http://dx.doi.org/10.2172/5989456.

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Tondra, Mark, James M. Daughton, Catherine Nordman, Dexin Wang, and John Taylor. Micromagnetic Design of Spin Dependent Tunnel Junctions for Optimized Sensing Performance. Fort Belvoir, VA: Defense Technical Information Center, December 1999. http://dx.doi.org/10.21236/ada451667.

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Sutton, Edmund C. Construction of a 345 Gigahertz Receiver Based on Superconducting Tunnel Junctions. Fort Belvoir, VA: Defense Technical Information Center, February 1990. http://dx.doi.org/10.21236/ada218781.

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Johnson, Jr, and Alan T. Effect of Leads and Quantum Fluctuations in Small Superconducting Tunnel Junctions. Fort Belvoir, VA: Defense Technical Information Center, August 1990. http://dx.doi.org/10.21236/ada227311.

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Chen, J., J. F. Zasadzinski, K. E. Gray, J. L. Wagner, D. G. Hinks, K. Kouznetsov, and L. Coffey. BCS-like gap structure of HgBa{sub 2}CuO{sub 4+{delta}} tunnel junctions. Office of Scientific and Technical Information (OSTI), December 1994. http://dx.doi.org/10.2172/10104581.

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Wang, Dexin, Cathy Nordman, Zhenghong Qian, James M. Daughton, and John Myers. Magnetostriction Effect of Amorphous CoFeB Thin Films and Application in Spin Dependent Tunnel Junctions. Fort Belvoir, VA: Defense Technical Information Center, January 2004. http://dx.doi.org/10.21236/ada452116.

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Verghese, S. Infrared detection with high-[Tc] bolometers and response of Nb tunnel junctions to picosecond voltage pulses. Office of Scientific and Technical Information (OSTI), May 1993. http://dx.doi.org/10.2172/6120573.

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