Relevant bibliographies by topics / Tunable RF MEMS impedance matching

Academic literature on the topic 'Tunable RF MEMS impedance matching'

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Published: 26 August 2023

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Journal articles on the topic "Tunable RF MEMS impedance matching"

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Guo, X. L., J. Huang, Z. L. Wang, H. H. Yin, Z. J. Zhang, M. Shi, and H. Jiang. "Tunable Matching Network Using MEMS Switches." Advanced Materials Research 765-767 (September 2013): 2575–78. http://dx.doi.org/10.4028/www.scientific.net/amr.765-767.2575.

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This paper presents a novel approach in order to construct low-loss reconfigurable impedance matching networks and tuners using MEMS series-contact switches and periodic defected-ground-structures (DGSs) implemented on coplanar waveguide (CPW) transmission lines. The application of DGSs results in an improved insertion loss and power handling capability compared to the conventional RF MEMS impedance tuning networks. The proposed structure consists of 12 DGSs and RF MEMS series-contact switches. The tunable matching network was fabricated on a silicon substrate and is only 1.4×̃˾̈˰̽̽˰̹̾˰̵̹̓͊˾˰̸̵̤˰̵̵̴̱̽̓͂ͅ˰̼̿̓̓˰̶̿˰̸̵̈́˰̵͇̻̾̈́̿͂˰̸̵͇̾˰̵̴̓ͅ˰̈́̿˰̸̱̳̽̈́˰̱˰́̀˰Ω˰̴̼̱̿˰̈́̿˰̅̀˰Ω˰̶͂̿m 5GHz up to 40 GHz is only 0.8 dB. The results show that the tuner can achieve a broadband impedance match for a wide variety of loads that are either purely resistive or that have a large reactance as well.
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Iannacci, Jacopo, Giuseppe Resta, Paola Farinelli, and Roberto Sorrentino. "RF-MEMS Components and Networks for High-Performance Reconfigurable Telecommunication and Wireless Systems." Advances in Science and Technology 81 (September 2012): 65–74. http://dx.doi.org/10.4028/www.scientific.net/ast.81.65.

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MEMS (MicroElectroMechanical-Systems) technology applied to the field of Radio Frequency systems (i.e. RF-MEMS) has emerged in the last 10-15 years as a valuable and viable solution to manufacture low-cost and very high-performance passive components, like variable capacitors, inductors and micro-relays, as well as complex networks, like tunable filters, reconfigurable impedance matching networks and phase shifters, and so on. The availability of such components and their integration within RF systems (e.g. radio transceivers, radars, satellites, etc.) enables boosting the characteristics and performance of telecommunication systems, addressing for instance a significant increase of their reconfigurability. The benefits resulting from the employment of RF-MEMS technology are paramount, being some of them the reduction of hardware redundancy and power consumption, along with the operability of the same RF system according to multiple standards. After framing more in detail the whole context of RF MEMS technology, this paper will provide a brief introduction on a typical RF-MEMS technology platform. Subsequently, some relevant examples of lumped RF MEMS passive elements and complex reconfigurable networks will be reported along with their measured RF performance and characteristics.
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Figur, Sascha A., Friedbert van Raay, Rüdiger Quay, Peter Lohmiller, Larissa Vietzorreck, and Volker Ziegler. "RF-MEMS variable matching networks and switches for multi-band and multi-mode GaN power amplifiers." International Journal of Microwave and Wireless Technologies 6, no. 3-4 (March 12, 2014): 265–76. http://dx.doi.org/10.1017/s175907871400021x.

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This work presents radio-frequency-microelectromechanical-system (RF-MEMS)-based tunable matching networks for a multi-band gallium nitride (GaN) power amplifer (PA) application. In the frequency range from 3.5–8.5 GHz return losses of 5–10 dB were measured for the input network, matching impedances close to the border of the Smith chart. For the output matching network return losses of 10–20 dB and insertion losses of 1.3–2 dB were measured. The matching networks can tune the PA to four different operating frequencies, as well as changing the transistor's mode of operation from maximum delivered-output-power to maximum power-added-efficiency (PAE), while keeping the operating frequency constant. Furthermore, different single pole double throw (SPDT)-switches are designed and characterized, to be used in frequency-agile transmit/receive-modules (T/R modules).
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Bhatia, Vinay, Sukhdeep Kaur, Kuldeep Sharma, Punam Rattan, Vishal Jagota, and Mohammed Abdella Kemal. "Design and Simulation of Capacitive MEMS Switch for Ka Band Application." Wireless Communications and Mobile Computing 2021 (July 12, 2021): 1–8. http://dx.doi.org/10.1155/2021/2021513.

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In this paper, RF MEMS switch with capacitive contact is designed and analyzed for Ka band application. A fixed-fixed beam/meander configuration has been used to design the switch for frequency band 10 GHz to 40 GHz. Electromagnetic and electromechanical analysis of three-dimensional (3D) structure/design has been analyzed in multiple finite element method (FEM) based full-wave simulator (Coventorware and high-frequency structure simulator). A comparative study has also been carried out in this work. The high resistivity silicon substrate ( tan δ = 0.010 , ρ > 8 k Ω − cm , ε r = 11.8 ) with a thickness of 675 ± 25 μ m has been taken for switch realization. The designed structure shows an actuation voltage of around 9.2 V. Impedance matching for the switch structure is well below 20 dB, loss in upstate, i.e., insertion loss >0.5 dB, and isolation of >25 dB throughout the frequency band is observed for the aforesaid structure. Furthermore, to increase the RF parameters, AIN dielectric material has been used instead of SiO2 resulting in capacitance in downstate that increases hence improved the isolation. The proposed switch can be utilized in various potential applications such as any switching/tunable networks phased-array radar, reconfigurable antenna, RF phase shifter, mixer, biomedical, filter, and any transmitter/receiver (T/R) modules.
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Sorrentino, Roberto, Paola Farinelli, Alessandro Cazzorla, and Luca Pelliccia. "RF-MEMS Application to RF Tuneable Circuits." Advances in Science and Technology 100 (October 2016): 100–108. http://dx.doi.org/10.4028/www.scientific.net/ast.100.100.

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The bursting wireless communication market, including 5G, advanced satellite communication systems and COTM (Communication On The Move) terminals, require ever more sophisticated functions, from multi-band and multi-function operations to electronically steerable and reconfigurable antennas, pushing technological developments towards the use of tunable microwave components and circuits. Reconfigurability allows indeed for reduced complexity and cost of the apparatuses. In this context, RF MEMS (Micro-Electro-Mechanical-Systems) technology has emerged as a very attractive solution to realize both tunable devices (e.g. variable capacitors, inductors and micro-relays), as well as complex circuits (e.g. tunable filters, reconfigurable matching networks and reconfigurable beam forming networks for phased array antennas). High linearity, low loss and high miniaturization are the typical advantages of RF MEMS over conventional technologies. Micromechanical components fabricated via IC-compatible MEMS technologies and capable of low-loss filtering, switching and frequency generation allow for miniaturized wireless front-ends via higher levels of integration. In addition, the inherent high linearity of the MEMS switches enables carrier aggregations without introducing intermodulation distortions. This paper will review the recent advances in the development of the RF MEMS to RF tunable circuits and systems.
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Qin Shen and N. S. Bar. "Distributed MEMS tunable matching network using minimal-contact RF-MEMS varactors." IEEE Transactions on Microwave Theory and Techniques 54, no. 6 (June 2006): 2646–58. http://dx.doi.org/10.1109/tmtt.2006.872943.

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Saha, Shimul C., Ulrik Hanke, Håkon Sagberg, Tor A. Fjeldly, and Trond Sæther. "Tunable Lowpass Filter with RF MEMS Capacitance and Transmission Line." Active and Passive Electronic Components 2012 (2012): 1–5. http://dx.doi.org/10.1155/2012/502465.

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We have presented an RF MEMS tuneable lowpass filter. Both distributed transmission lines and RF MEMS capacitances were used to replace the lumped elements. The use of RF MEMS capacitances gives the flexibility of tuning the cutoff frequency of the lowpass filter. We have designed a low-pass filter at 9–12 GHz cutoff frequency using the theory of stepped impedance transmission lines. A prototype of the filter has been fabricated using parallel plate capacitances. The variable shunt capacitances are formed by a combination of a number of parallel plate RF MEMS capacitances. The cutoff frequency is tuned from C to X band by actuating different combinations of parallel capacitive bridges. The measurement results agree well with the simulation result.
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Palson, C. L., D. D. Krishna, B. R. Jose, J. Mathew, and M. Ottavi. "Memristor Based Planar Tunable RF Circuits." Journal of Circuits, Systems and Computers 28, no. 13 (February 11, 2019): 1950225. http://dx.doi.org/10.1142/s0218126619502256.

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Memristors have been recently proposed as an alternative to incorporate switching along with traditional CMOS circuits. Adaptive impedance and frequency tuning are an essential and challenging aspect in communication system design. To enable both, a matching network based on switchable capacitors with fixed inductors is proposed in this paper where the switching is done by memristive switches. This paper analyzes the operation of memristors as a switch and a matching network based on memristors which adaptively tunes with impedance and frequency. With three capacitor banks of each 0.5 pF resolution and two fixed inductors, matching for antenna impedance ranging from 20 to 200[Formula: see text]Ohms and for frequencies ranging from 0.9 to 3.2[Formula: see text]GHz is reported. Thereafter, an adaptive planar band-pass filter is implemented on CMOS technology with two metal layers. This adaptive frequency tunable band-pass filter uses a [Formula: see text] network with resonator tanks in both arms that operates at 2.45 GHz. It is tunable from 2.8[Formula: see text]GHz to 7.625[Formula: see text]GHz range. This tunability is achieved using tunable spiral inductor based on memristive switches. The proposed filter layout is implemented and simulated in ANSYS Designer. The initialization and the programming circuitry to enable adaptive switching of the memristive devices has to be addressed. Since RF memristive devices are not commercially available, circuit level simulations are done as a proof of concept to validate the expected results.
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Iannacci, J. "Reconfigurable RF-MEMS-based impedance matching networks for a hybrid RF-MEMS/CMOS class-E power amplifier." Microsystem Technologies 25, no. 12 (June 8, 2019): 4709–19. http://dx.doi.org/10.1007/s00542-019-04510-3.

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Gholamian, Sholeh, and Ebrahim Abbaspour-Sani. "Design and Simulation of RF MEMS Tunable Spiral Inductor." Advanced Materials Research 403-408 (November 2011): 4148–51. http://dx.doi.org/10.4028/www.scientific.net/amr.403-408.4148.

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This paper presents a tunable inductor using MEMS technology .This tunable spiral inductor is designed in order to be used in RF circuits such as : controlled oscillators with voltage (VCO) , matching networks ,amplifiers etc . The electrostatic method is employed for tuning the inductor by the movement of cantilever beam downward and changing the value of magnetic flux. Value of inductance varies fram 1.15nh to 0.561 nh .therefore ,tunablity of 66.21% was achieved .Maximum quality factor in the above inductor was achieved az 13.88 in the frequency 0f 12 GHz and the value of resonance frequency was achieved as 19.5 GHz
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Dissertations / Theses on the topic "Tunable RF MEMS impedance matching"

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Laouini, Mariem. "Conception, simulation et mesures de différents circuits reconfigurables utilisant des commutateurs MEMS RF et des commutateurs à matériaux à changement de phase (PCM)." Electronic Thesis or Diss., Limoges, 2023. https://aurore.unilim.fr/theses/nxfile/default/15037a69-5484-4258-a2c0-9a2beb9183c1/blobholder:0/2023LIMO0020.pdf.

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Ce manuscrit représente les travaux de thèse qui traitent principalement la conception des commutateurs MEMS RF pour des circuits reconfigurables. Une solution qui résout le problème du phénomène de piégeage dans le diélectrique des commutateurs a été proposée en utilisant le diélectrique Ta/Ta2O5. Ce commutateur MEMS RF, fonctionnant à une fréquence de 20 GHz, a bien démontré un fonctionnement fiable sans l’apparition du phénomène de chargement du diélectrique. Il a également donné une grande valeur de capacité de 350 fF et un contraste capacitif élevé de 7. Ces composants ont été ensuite intégré dans la conception d’un déphaseur en réflexion qui utilise le coupleur hybride de Lange. Le déphaseur a garanti un déphasage de 180°, des faibles pertes d’insertion ainsi qu’une bonne isolation inférieure à -23 dB. D’autres commutateurs MEMS RF en Au/SiN ont également été employés dans la conception d’un déphaseur à 2 bits et un autre à 3 bits. Le déphaseur à 2 bits a démontré la possibilité d’avoir un déphasage régulier de 0°,96° et 186° avec un pas approximatif de 90°. Les commutateurs à matériaux à changement de phase PCM, conçus au sein de notre laboratoire XLIM, ont également été testés pour la conception d’un déphaseur. Ce dernier a pu atteindre les 180° déphasage avec un problème de pertes d’insertions assez conséquents. Un dernier projet qui portait sur la conception d’un Tuner d’impédance reconfigurable LC a été détaillé. Cet adaptateur d’impédance a été testé sur le transistor WolfSpeed CGH40010F et a démontré une bonne adaptation en sortie du transistor à la fréquence de travail de 5 GHz. La conception du Tuner ainsi que son intégration dans une carte PCB avec un substrat FR4 restent, cependant, des perspectives
This manuscript represents the thesis work that mainly deals with the design of RF MEMS switches for reconfigurable circuits. A solution that solves the problem of trapping phenomenon in the dielectric of the switch has been proposed using Ta/Ta2O5 dielectric. This RF MEMS switch, operating at a frequency of 20 GHz, has showed reliable operation without the occurrence of the dielectric-trapping phenomenon. It also gave a high capacitance value of 350 fF and a high capacitive contrast of seven. These components are then integrated into the design of a reflective type phase shifter using the Lange hybrid coupler. The phase shifter guaranteed a 180° phase shift, low insertion losses as well as good isolation below -23 dB.Other RF MEMS switches, using Au/SiN actuation electrode, are used in the design of a 2-bit and a 3-bit phase shifter. The 2-bit phase shifter demonstrated the ability to have a smooth phase shift of 0°, 96° and 186° with an approximate step size of 90°. The PCM phase change materials switches, designed in our XLIM laboratory, were also tested for the design of a phase shifter. The conceived circuit was able to reach the 180° phase shift with, however, high insertion losses. In the last project, we detailed a design of an LC reconfigurable impedance tuner. This impedance adapter is tested on the WolfSpeed CGH40010F transistor and demonstrated a good matching at the output of the transistor at 5 GH. The design of the tuner and its integration into a PCB card on a FR4 substrate are still, however, a matter of concern
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Unlu, Mehmet. "An Adjustable Impedance Matching Network Using Rf Mems Technology." Master's thesis, METU, 2003. http://etd.lib.metu.edu.tr/upload/1124676/index.pdf.

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This thesis presents design, modeling, and fabrication of an RF MEMS adjustable impedance matching network. The device employs the basic triple stub matching technique for impedance matching. It has three adjustable length stubs which are implemented using capacitively loaded coplanar waveguides. The capacitive loading of the stubs are realized using the MEMS switches which are evenly distributed over the stubs. There are 40 MEMS bridges on each stub whichare separated with &
#955
/40 spacing making a total of 120 MEMS switches in the structure. The variability of the stub length is accomplished by closing the MEMS switch nearest to the required stub length, and making a virtual short circuit to ground. The device is theoretically capable of doing matching to every point on the Smith chart. The device is built on coplanar waveguide transmission lines. It has a center operating frequency of 10GHz, but because of its adjustability property it is expected to work in 1-40GHz range. It has dimensions of 8950 ×
5720µ
m2. This work is the continuation of the first national work on fabrication of RF MEMS devices. The device in this work is fabricated using the surface micromachining technology in the microelectronic facilities of Middle East Technical University.
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Nicolas, Dominique. "Conception de circuits RF en CMOS SOI pour modules d'antenne reconfigurables." Thesis, Toulouse 3, 2017. http://www.theses.fr/2017TOU30088/document.

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Dans le contexte des applications mobiles, les contraintes de conception des chaînes d'émission toujours plus performantes et de taille réduite demandent de compenser la forte sensibilité des caractéristiques des antennes à leur environnement. En particulier, il est nécessaire de maîtriser l'impédance de l'antenne pour optimiser l'efficacité énergétique de la chaîne de transmission. Or, les solutions actuelles se montrent encombrantes. Dans cette thèse, plusieurs pistes basées sur l'implémentation de condensateurs variables ont été étudiées et ont conduit à la réalisation et la caractérisation de nouveaux dispositifs RF intégrés à même de participer à cet effort. Après une présentation du contexte et de l'état de l'art, nous proposons une étude de condensateurs variables basés sur la technique des capacités commutées. L'étude a permis la réalisation de deux condensateurs variables en technologie CMOS SOI 130 nm pour des applications d'adaptation d'impédance et d'antenne agile en fréquence. Un premier démonstrateur d'antenne fente agile en fréquence visant les bandes LTE situées entre 500 MHz et 1 GHz et utilisant ce type de condensateur a ensuite été réalisé puis validé. Un système d'accord permettant de corriger les désadaptations d'antenne a ensuite été étudié et a donné lieu à la réalisation de deux circuits intégrés en technologie CMOS SOI 130 nm. Le premier circuit est un détecteur d'impédance capable de fonctionner sur une gamme de puissance étendue de 0-40 dBm pour une plage de fréquences de 600 MHz-2,4 GHz. Le deuxième circuit intègre une version améliorée du détecteur avec un circuit d'adaptation variable autorisant la réalisation d'un système d'accord d'antenne autonome et compact représentant une avancée importante par rapport à l'état de l'art
In the context of mobile applications, design constraints on always more performant and size-constrained emitting front-ends ask to compensate for strong sensitiveness of antennas characteristics to their environment. In particular, it is necessary to control the antenna impedance in order to optimize the energy efficiency of the transmitting front-end. Yet, current solutions are bulky. I this thesis, several ways based on the implementation of variable capacitors have been studied and have led to the design and characterization of new integrated RF devices that can participate to this effort. After a presentation of the context and the state-of-the-art, we propose a study of switched-capacitor-based variable capacitors. This study allowed the design of two variable capacitors in 130 nm CMOS SOI technology for impedance matching and frequency-agile antenna applications. Then, a first demonstrator module of a frequency-agile antenna aiming for 500 MHz-1 GHz LTE bands and using this type of capacitor has been designed and validated. A tunable system allowing the correction of antenna mismatch has then been studied and has led to the design of two 130 nm CMOS SOI integrated circuits. The first circuit is an impedance detector that is able to work on a 0-40 dBm power range and a 600 MHz-2.5 GHz frequency range. The second integrated circuit includes an improved version of the detector with a tunable matching network which both allow the fabrication of an autonomous, compact antenna tunable system showing significant progress relative to the state-of-the-art
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Fouladi, Azarnaminy Siamak. "Reconfigurable Impedance Matching Networks Based on RF-MEMS and CMOS-MEMS Technologies." Thesis, 2010. http://hdl.handle.net/10012/5171.

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Reconfigurable impedance matching networks are an integral part of multiband radio-frequency (RF) transceivers. They are used to compensate for the input/output impedance variations between the different blocks caused by switching the frequency band of operation or by adjusting the output power level. Various tuning techniques have been developed to construct tunable impedance matching networks employing solid-state p-i-n diodes and varactors. At millimeter-wave frequencies, the increased loss due to the low quality factor of the solid-state devices becomes an important issue. Another drawback of the solid-state tuning elements is the increased nonlinearity and noise at higher RF power levels. The objective of the research described in this thesis is to investigate the feasibility of using RF microelectromechanical systems (RF-MEMS) technology to develop reconfigurable impedance matching networks. Different types of tunable impedance matching networks with improved impedance tuning range, power handling capability, and lower insertion loss have been developed. Another objective is to investigate the realization of a fully integrated one-chip solution by integrating MEMS devices in standard processes used for RF integrated circuits (RFICs). A new CMOS-MEMS post-processing technique has been developed that allows the integration of tunable RF MEMS devices with vertical actuation within a CMOS chip. Various types of CMOS-MEMS components used as tuning elements in reconfigurable RF transceivers have been developed. These include tunable parallel-plate capacitors that outperform the available CMOS solid-state varactors in terms of quality factor and linearity. A tunable microwave band-pass filter has been demonstrated by employing the proposed RF MEMS tunable capacitors. For the first time, CMOS-MEMS capacitive type switches for microwave and millimeter-wave applications have been developed using TSMC 0.35-µm CMOS process employing the proposed CMOS-MEMS integration technique. The switch demonstrates an excellent RF performance from 10-20 GHz. Novel MEMS-based reconfigurable impedance matching networks integrated in standard CMOS technologies are also presented. An 8-bit reconfigurable impedance matching network based on the distributed MEMS transmission line (DMTL) concept operating at 13-24 GHz is presented. The network is implemented using standard 0.35-µm CMOS technology and employs a novel suspended slow-wave structure on a silicon substrate. To our knowledge, this is the first implementation of a DMTL tunable MEMS impedance matching network using a standard CMOS technology. A reconfigurable amplifier chip for WLAN applications operating at 5.2 GHz is also designed and implemented. The amplifier achieves maximum power gain under variable load and source impedance conditions by using the integrated RF-MEMS impedance matching networks. This is the first single-chip implementation of a reconfigurable amplifier using high-Q MEMS impedance matching networks. The monolithic CMOS implementation of the proposed RF MEMS impedance matching networks enables the development of future low-cost single-chip RF multiband transceivers with improved performance and functionality.
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Shen, Qin. "8-50 GHz distributed MEMS tunable matching network using minimal contact RF-MEMS varactors /." 2005. http://wwwlib.umi.com/dissertations/fullcit/3189317.

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Cheng, Chih-Wen, and 鄭智文. "Improved Characteristics of RF Front-end Circuitry Using Tunable MEMS Matching Network." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/nb7x28.

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碩士
國立臺灣科技大學
電子工程系
106
In this thesis, we present a method which shunts a digital tunable capacitor arrays in the matching network at the antenna switch module output port. This digital tunable capacitor arrays has the advantage of low insertion loss, high quality factor and high linearity. It is suitable to be a RF front-end component. Nowadays the LTE frequency bands are more than 3G frequency bands but we still use only one matching network at the antenna switch output. The impedance in this matching network is close to 50ohm, so we put a digital tunable capacitor arrays into this matching network and make it to be a tunable matching network. We can optimize the impedance matching network on each operation frequency bands. We can improve the power-added efficiency and linearity. We get 2.08% ~ 5.64% improvements on the current consumption on each operation frequency bands. In the linearity, we got 0.97dB ~ 3.6dB improvements on the adjacent channel leakage ratio on each operation frequency bands. Referring to the test results, this tunable matching network is a workable solution for improving the current consumption and linearity in each operation frequency bands.
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Book chapters on the topic "Tunable RF MEMS impedance matching"

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Makwana, Dhruv, Arun Mohan, and Saroj Mondal. "A Fully On-Chip Tunable Impedance Matching Strategy for Maximum Power Transfer in RF Energy Harvesting Systems." In Lecture Notes in Electrical Engineering, 101–12. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-6780-1_9.

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Conference papers on the topic "Tunable RF MEMS impedance matching"

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Ziraksaz, Fazel, and Alireza Hassanzadeh. "A 23.4-31.9 GHz Tunable RF-MEMS Impedance Matching Network for 5G Power Amplifier." In 2021 29th Iranian Conference on Electrical Engineering (ICEE). IEEE, 2021. http://dx.doi.org/10.1109/icee52715.2021.9544293.

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Ziraksaz, Fazel, and Alireza Hassanzadeh. "A 23.4-31.9 GHz Tunable RF-MEMS Impedance Matching Network for 5G Power Amplifier." In 2021 29th Iranian Conference on Electrical Engineering (ICEE). IEEE, 2021. http://dx.doi.org/10.1109/icee52715.2021.9544293.

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Malmqvist, R., P. Rantakari, C. Samuelsson, M. Lahti, S. Cheng, J. Saijets, T. Vaha-Heikkila, A. Rydberg, and J. Varis. "RF MEMS based impedance matching networks for tunable multi-band microwave low noise amplifiers." In 2009 International Semiconductor Conference (CAS 2009). IEEE, 2009. http://dx.doi.org/10.1109/smicnd.2009.5336539.

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Unlu, M., K. Topalli, H. Atasoy, E. Temocin, I. Istanbulluoglu, O. Bayraktar, S. Demir, O. Civi, S. Koc, and T. Akin. "A Reconfigurable RF MEMS Triple Stub Impedance Matching Network." In 2006 European Microwave Conference. IEEE, 2006. http://dx.doi.org/10.1109/eumc.2006.281272.

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Sharma, Ashish Kumar, and Navneet Gupta. "Impedance matching for RF-MEMS based microstrip patch antenna." In 2014 11th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON). IEEE, 2014. http://dx.doi.org/10.1109/ecticon.2014.6839775.

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Maune, Holger, Mohsen Sazegar, and Rolf Jakoby. "Tunable impedance matching networks for agile RF power amplifiers." In 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011. IEEE, 2011. http://dx.doi.org/10.1109/mwsym.2011.5972681.

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Maune, H., M. Sazegar, and R. Jakoby. "Tunable impedance matching networks for agile RF power amplifiers." In 2011 IEEE/MTT-S International Microwave Symposium - MTT 2011. IEEE, 2011. http://dx.doi.org/10.1109/mwsym.2011.5973541.

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Domingue, Frederic, Ammar B. Kouki, and Raafat R. Mansour. "Tunable microwave amplifier using a compact MEMS impedance matching network." In 2009 European Microwave Conference (EuMC). IEEE, 2009. http://dx.doi.org/10.23919/eumc.2009.5296314.

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Iannacci, J., D. Masotti, T. Kuenzig, and M. Niessner. "A reconfigurable impedance matching network entirely manufactured in RF-MEMS technology." In SPIE Microtechnologies, edited by Ulrich Schmid, José Luis Sánchez-Rojas, and Monika Leester-Schaedel. SPIE, 2011. http://dx.doi.org/10.1117/12.886186.

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Wiens, Alex, Olof Bengtsson, Christian Kohler, Daniel Kienemund, Mohammad Nikfalazar, Holger Maune, Andreas Friederich, Joachim R. Binder, Wolfgang Heinrich, and Rolf Jakoby. "Tunable impedance matching networks on printed ceramics for output matching of RF-power transistors." In 2014 44th European Microwave Conference (EuMC). IEEE, 2014. http://dx.doi.org/10.1109/eumc.2014.6986479.

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Reports on the topic "Tunable RF MEMS impedance matching"

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Barker, Scott N. RF-MEMS Based Tunable Matching Network. Fort Belvoir, VA: Defense Technical Information Center, October 2003. http://dx.doi.org/10.21236/ada418038.

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