Journal articles: 'Tunable Microwave Circuits'

1

Tae-Yeoul Yun and Kai Chang. "Piezoelectric-transducer-controlled tunable microwave circuits." IEEE Transactions on Microwave Theory and Techniques 50, no. 5 (May 2002): 1303–10. http://dx.doi.org/10.1109/22.999143.

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Fu, Jia-Shiang, Xinen Alfred Zhu, Jamie D. Phillips, and Amir Mortazawi. "Improving Linearity of Ferroelectric-Based Microwave Tunable Circuits." IEEE Transactions on Microwave Theory and Techniques 55, no. 2 (February 2007): 354–60. http://dx.doi.org/10.1109/tmtt.2006.889323.

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Kanagala, Sekhar, Faruque Ahamed, Urmila Nath, Shilpa Wakade, and Guru Subramanyam. "Electrical Modeling of Ferroelectric Tunable Microwave Components and Circuits." Ferroelectrics 329, no. 1 (December 2005): 13–21. http://dx.doi.org/10.1080/00150190500314890.

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Sorrentino, Roberto, Paola Farinelli, Alessandro Cazzorla, and Luca Pelliccia. "RF-MEMS Application to RF Tuneable Circuits." Advances in Science and Technology 100 (October 2016): 100–108. http://dx.doi.org/10.4028/www.scientific.net/ast.100.100.

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The bursting wireless communication market, including 5G, advanced satellite communication systems and COTM (Communication On The Move) terminals, require ever more sophisticated functions, from multi-band and multi-function operations to electronically steerable and reconfigurable antennas, pushing technological developments towards the use of tunable microwave components and circuits. Reconfigurability allows indeed for reduced complexity and cost of the apparatuses. In this context, RF MEMS (Micro-Electro-Mechanical-Systems) technology has emerged as a very attractive solution to realize both tunable devices (e.g. variable capacitors, inductors and micro-relays), as well as complex circuits (e.g. tunable filters, reconfigurable matching networks and reconfigurable beam forming networks for phased array antennas). High linearity, low loss and high miniaturization are the typical advantages of RF MEMS over conventional technologies. Micromechanical components fabricated via IC-compatible MEMS technologies and capable of low-loss filtering, switching and frequency generation allow for miniaturized wireless front-ends via higher levels of integration. In addition, the inherent high linearity of the MEMS switches enables carrier aggregations without introducing intermodulation distortions. This paper will review the recent advances in the development of the RF MEMS to RF tunable circuits and systems.

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Li, Hai-Chao, Hai-Yang Zhang, Qing He, and Guo-Qin Ge. "Nonlinear manipulation of tunable microwave amplification and attenuation in superconducting circuits." EPL (Europhysics Letters) 115, no. 5 (September 1, 2016): 54002. http://dx.doi.org/10.1209/0295-5075/115/54002.

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MANSOUR, MOHAMED M., MOSTAFA A. ELMALA, ABDEL-AZIZ T. SHALABY, and EL-SAYED M. EL-RABAIE. "THIN FILM FERROELECTRIC TUNABLE ZEROTH-ORDER RESONATOR BASED ON CRLH METAMATERIALS." Journal of Circuits, Systems and Computers 23, no. 01 (January 2014): 1450013. http://dx.doi.org/10.1142/s0218126614500133.

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In this paper, we propose a tunable CRLH ZOR based on the latest resurgent of ferroelectric materials. It is known that for most resonant structures, attainment of optimal performance requires some level of additional tuning through either mechanical means (i.e., with tuning screws) or other coupling mechanisms. Therefore, incorporation of electronic tuning into high temperature superconductor (HTS) material components without degradation of performance is very attractive. The result will be low-loss microwave components that could be fine-tuned for optimal performance, with the additional attribute of being tunable over a broadband frequency range. The dielectric properties of the ferroelectric thin film, and the thickness of the ferroelectric film, play a fundamental role in the frequency or phase tunability and the overall insertion loss of the circuit. The main driving force toward using the ferroelectric is the potential for substantial miniaturization of microwave components and systems and the potential for integration with microelectronic circuits due to the development of thin and thick film ferroelectric technology. The ZOR is designed, and simulated by the full-wave analysis software. The response shows a variation of electromagnetic characteristics with the applied electric field, ferroelectric thickness and the operating temperature.

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Zhong, Wen-Xue, Guang-Ling Cheng, and Ai-Xi Chen. "Coherent control of tunable entanglement between two resonators in superconducting circuits." International Journal of Quantum Information 12, no. 01 (February 2014): 1450009. http://dx.doi.org/10.1142/s0219749914500099.

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We present an efficient method to generate Einstein–Podolsky–Rosen (EPR) entanglement of two microwave photons with different frequencies in two superconducting resonators. Our scheme is based on the sideband couplings of two resonators with a single gap-tunable superconducting quantum circuits driven by a controlled field. By the proper choice of the physical parameters, the nonlinear interaction of parametric down-conversion occurs between two resonators while the superconducting qubit remains in the original state, which is responsible for the entanglement generation. The present scheme would provide a promising alternative approach to scalable quantum information processing in solid-state systems.

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Kapitanova, Polina, Dmitry Kholodnyak, Stefan Humbla, Ruben Perrone, Jens Mueller, Matthias A. Hein, and Irina Vendik. "Tunable microwave devices based on left/right-handed transmission line sections in multilayer implementation." International Journal of Microwave and Wireless Technologies 1, no. 4 (June 25, 2009): 323–29. http://dx.doi.org/10.1017/s175907870999033x.

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Metamaterial transmission lines can be realized as a combination of right- and left-handed transmission line (TL) sections exhibiting positive and negative dispersion. This approach gives additional degrees of freedom for improving the performance of microwave devices. Artificial right- and left-handed sections, which are based on lumped-element unit cells consisting of inductance and capacitances (LC-cells), are used. This makes it possible to decrease dimensions of the devices drastically. Furthermore, using variable capacitors in LC-cells allows designing tunable devices. This paper presents the results of design, numerical simulation, and experimental investigation of a tunable rat-race ring and free-of-spurious response dual-band filter manufactured as integrated ceramic multilayer circuits based on low-temperature co-fired ceramics. Commercial semiconductor varactors have been used as tunable components.

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Wu, Kun, Guangling Cheng, and Aixi Chen. "Tunable asymmetric Einstein–Podolsky–Rosen steering of microwave photons in superconducting circuits." Journal of the Optical Society of America B 37, no. 2 (January 14, 2020): 337. http://dx.doi.org/10.1364/josab.382881.

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Evseev, Vladimir, Mikhail Ivlev, Elena Lupanova, Sergey Nikulin, Vitaliy Petrov, and Andrey Terentyev. "Automation of S-parameters measurements of high-power microwave transistors in a contact device with tunable strip matching circuits." ITM Web of Conferences 30 (2019): 11002. http://dx.doi.org/10.1051/itmconf/20193011002.

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In the practice by microwave power transistor amplifiers developing, the variable load method is usually used to determine the impedances of matching circuits in the complex conjugate matching mode. This solution involves the use of expensive equipment - coaxial impedance tuners and contact devices for mounting transistors in low impedance strip lines. An even more complicated and expensive way is the concept of X- parameters, based on the use of unique measuring equipment - a non-linear vector network analyzer, and a simulator for non-linear circuits design. The article proposes an alternative solution adapted to the operation of the transistor in real conditions and allowing to design the output stages of microwave power amplifiers using analysis and optimization of linear electrical circuits. The essence of the proposed solution is to automate the measurement of non-linear S-parameters of high-power microwave transistors in a contact device with tunable strip matching circuits for various DC supply voltage, frequency and input power mode in case of continuous or pulse input signal. The nonlinear S-parameters of the contact device are measured using the method of spatially remote variable load in the frequency range, in which the line conditioning and the maximum output power are achieved. The minimum of the reflected wave amplitude and the maximum gain are reached using movable strip matching transformers. The S-parameters measured in the coaxial line are automatically recalculated to the physical boundaries of the transistor by registering the positions of the input and output strip transformers.

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XU, HONGTAO, NADIA K. PERVEZ, and ROBERT A. YORK. "TUNABLE MICROWAVE INTEGRATED CIRCUITS USING BST THIN FILM CAPACITORS WITH DEVICE STRUCTURE OPTIMIZATION." Integrated Ferroelectrics 77, no. 1 (December 2005): 27–35. http://dx.doi.org/10.1080/10584580500413681.

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Tao, Rui, Xiao-Tao Mo, Zheng-Yuan Xue, and Jian Zhou. "Practical one-step synthesis of multipartite entangled states on superconducting circuits." International Journal of Quantum Information 17, no. 07 (October 2019): 1950051. http://dx.doi.org/10.1142/s0219749919500515.

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Quantum entanglement is an important resource for quantum information processing tasks. However, realistic multipartite entangled state production is very difficult. In this paper, we propose an efficient single-step scheme for generating many body Greenberger–Horne–Zeilinger (GHZ) states on superconducting circuits by using a superconducting transmission-line resonator (TLR) interact with [Formula: see text] superconducting transmon qubits. The distinct merit of our proposal is that it does not require the qubit-resonator coupling strengths to be the same, which is usually impractical experimentally, and thus is one of the main reasons for entanglement generation infidelity in previous single-step schemes. The removing of the uniform interaction requirement is achieved by modulating the qubits splitting frequencies with ac microwave fields, which results in tunable individual qubit-resonator coupling strength, and thus effective uniform qubit–qubit interaction Hamiltonian can be obtained. Since microwave control is conventional nowadays, our proposal can be directly tested experimentally, which makes previous multipartite entangled states generation schemes more efficient.

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Edward, N., N. A. Shairi, Z. Zakaria, Tole Sutikno, and I. D. Saiful Bahri. "Tunable function of feeding network and SPDT switch for WIMAX application." Indonesian Journal of Electrical Engineering and Computer Science 14, no. 3 (June 1, 2019): 1574. http://dx.doi.org/10.11591/ijeecs.v14.i3.pp1574-1580.

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<p>A tunable circuit that functions as a power divider and a single pole double throw (SPDT) switch is proposed in this paper. The power divider design was based on the conventional Wilkinson power divider (WPD). Since WPD design has wideband properties, a modification was made in the design to make it narrowband so that it will only work for WiMAX applications. Two shorted stubs were introduced in the transmission line of the output ports to encounter the mismatch when the function was switched to an SPDT switch. Rogers RO4350 (er = 3.48, h = 0.508mm) was used as a substrate material and copper (thickness = 0.035 mm) related to patch of this proposed design. When the circuit functioned as a power divider, the simulated result showed S11 < -16 dB, S12 > 3.97 dB, and S23 < -14 dB for both operating frequencies of 2.5 GHz and 3.5 GHz. On the other hand, when the circuit functioned as an SPDT switch and port 2 was in the ON state, the simulated result showed S11 < -35 dB, S12 > -1.1, S13 < -16 dB, and S23 < 18 dB for both operating frequencies of 2.5 and 3.5 GHz. The proposed design showed a good performance as a power divider and an SPDT switch, thus, it can be used for multifunctional microwave circuits.</p>

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Nesimoglu, Tayfun, and Cumali Sabah. "A Tunable Metamaterial Resonator Using Varactor Diodes to Facilitate the Design of Reconfigurable Microwave Circuits." IEEE Transactions on Circuits and Systems II: Express Briefs 63, no. 1 (January 2016): 89–93. http://dx.doi.org/10.1109/tcsii.2015.2503058.

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Vorobiev, Andrei, and Spartak Gevorgian. "Enhanced tunable performance of high Q-factor BaxSr1−xTiO3 film bulk acoustic wave resonators." International Journal of Microwave and Wireless Technologies 5, no. 3 (April 15, 2013): 361–69. http://dx.doi.org/10.1017/s1759078713000317.

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Emerging intrinsically tunable film bulk acoustic wave(BAW) resonators allow the development of new generation reconfigurable and agile microwave circuits. In this paper, we demonstrate the enhancement of tunable performance of the high Q-factor BaxSr1−xTiO3 BAW – solidly mounted resonators (BAW–SMR) by varying Ba concentration. The Ba0.5Sr0.5TiO3 BAW–SMR reveal tunability of series resonance frequency up to 2.4%, electromechanical coupling coefficient up to 7.5% and rather high Q-factor, up to 250 at 5.3 GHz. Correlations between the measured electroacoustic parameters are analyzed using the theory of dc field-induced piezoelectric effect in paraelectric phase ferroelectrics. Higher coupling coefficient and tunability of resonance frequency of the Ba0.5Sr0.5TiO3 BAW–SMR are associated with higher tunability of permittivity. Strong anisotropy in field-induced piezoelectric effect is predicted with highest coupling coefficient in (001) direction of the BaxSr1−xTiO3 films. It is also shown that the tunability of series resonance frequency of Ba0.5Sr0.5TiO3 BAW–SMR is limited by relatively high and negative nonlinear electrostriction coefficient which is found to be m ≈ −4·1010 m/F. The BAW–SMR Q-factor is limited significantly by extrinsic acoustic loss associated with wave scattering at reflection from relatively rough top interface. The results of analysis show possible ways of further improvement of the performance of tunable BAW–SMR.

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Yasir, Muhammad, Pietro Zaccagnini, Gianluca Palmara, Francesca Frascella, Niccolò Paccotti, and Patrizia Savi. "Morphological Characterization and Lumped Element Model of Graphene and Biochar Thick Films." C 7, no. 2 (March 27, 2021): 36. http://dx.doi.org/10.3390/c7020036.

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Carbon based materials exhibit interesting mechanical, thermal and electrical properties which make them excellent contenders for use as fillers in composites as film. Graphene has been vastly used among the carbon-based materials. More recently eco-friendly carbon-based materials like biochar have emerged. The deployment of carbon-based materials in films needs to be studied since films are more versatile and permit the exploitation of electrical properties of such materials over circuits and systems. Typical circuits and systems exploiting electrical properties of novel materials perform a number of applications including sensing, detection, tunable devices and energy harvesting. In this paper, films composed of 9:1 graphene or biochar are deployed on a microstrip line. The morphological properties of graphene and biochar and their respective films are studied with Raman spectra and Field Emission Scanning Electron Microscope (FESEM). The electrical properties (four-point probe measurements and scattering parameter measurements) of the films. Low frequency measurements are used as starting point for circuit models estimating the lumped impedance of the films. From the morphological characterization it is shown that biochar films appear as granulates carbonaceous materials whereas graphene films contains several flakes forming a network. From the low frequency measurements and microwave characterization it is seen that graphene films are more conductive as compared to biochar films. In many applications, it is useful to know the surface impedance of the film since it varies on interaction with any external stimulus (variation of pressure, humidity, gas, etc.).

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Bisharat, Dia’aaldin J., and Daniel F. Sievenpiper. "Manipulating line waves in flat graphene for agile terahertz applications." Nanophotonics 7, no. 5 (May 24, 2018): 893–903. http://dx.doi.org/10.1515/nanoph-2017-0133.

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AbstractReducing open waveguides enabled by surface waves, such as surface plasmon polaritons, to a one-dimensional line is attractive due to the potentially enhanced control over light confinement and transport. This was recently shown to be possible by simply interfacing two co-planar surfaces with complementary surface impedances, which support transverse-magnetic and transverse-electric modes, respectively. Attractively, the resultant “line wave” at the interface line features singular field enhancement and robust direction-dependent polarizations. Current implementations, however, are limited to microwave frequencies and have fixed functionality due to the lack of dynamic control. In this article, we examine the potential of using gate-tunable graphene sheets for supporting line waves in the terahertz regime and propose an adequate graphene-metasurface configuration for operation at room temperature and low voltage conditions. In addition, we show the occurrence of quasi-line wave under certain conditions of non-complementary boundaries and qualify the degradation in line wave confinement due to dissipation losses. Furthermore, we show the possibility to alter the orientation of the line wave’s spin angular momentum on demand unlike conventional surface waves. Our results on active manipulation of electromagnetic line waves in graphene could be useful for various applications including reconfigurable integrated circuits, modulation, sensing and signal processes.

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Yasir, Muhammad, and Patrizia Savi. "Dynamically Tunable Phase Shifter with Commercial Graphene Nanoplatelets." Micromachines 11, no. 6 (June 20, 2020): 600. http://dx.doi.org/10.3390/mi11060600.

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In microwave frequency band the conductivity of graphene can be varied to design a number of tunable components. A tunable phase shifter based on commercial graphene nanoplatelets is introduced. The proposed configuration consists of a microstrip line with two stubs connected with a taper. On each side of the stubs there is a gap, short circuited through a via, where the commercial graphene nanoplatelets are drop casted. By applying a DC bias voltage that alters the graphene resistance the phase of the transmitted signal through the microstrip line can be varied. In order to maximize the phase shift of the transmitted signal and minimize the insertion loss, the length of the taper and the stubs are optimized by the help of circuit model and full-wave simulations. A prototype working at 4GHz is fabricated and measured. A phase variation of 33 degrees is acquired with an amplitude variation of less than 0.4 dB.

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Spiegel, Judith, and Isabelle Huynen. "Microwave Properties of Ferromagnetic Nanowires and Applications to Tunable Devices." Solid State Phenomena 152-153 (April 2009): 389–93. http://dx.doi.org/10.4028/www.scientific.net/ssp.152-153.389.

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Microwave devices as circulators or tunable filters demand nowadays small size and broad bandwidth. Ferromagnetic nanowired membranes are ideal candidates for this purpose. This paper focuses on the dielectric properties of such substrates, as influenced by the ferromagnetic nature of nanowires and their filling factor. Two particular cases are considered: a membrane filled up to its top with nanowires, forming a one-layer substrate, and a membrane filled up to a certain percentage of its height with nanowires, forming a two-layer substrate. The models proposed in this paper for each case take the inductive and gyromagnetic effects in the wires into account. They predict for the one-layer case a magnetodielectric behavior which is tunable by applying an external magnetic field. The effect is no longer visible for the two-layer topology corresponding to microwave circuit applications.

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PANTOLI, LEONARDO, VINCENZO STORNELLI, and GIORGIO LEUZZI. "TUNABLE ACTIVE FILTERS FOR RF AND MICROWAVE APPLICATIONS." Journal of Circuits, Systems and Computers 23, no. 06 (May 14, 2014): 1450088. http://dx.doi.org/10.1142/s0218126614500881.

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In this paper, we present a low-voltage tunable active filter for microwave applications. The proposed filter is based on a single-transistor active inductor (AI), that allows the reduction of circuit area and power consumption. The three active-cell bandpass filter has a 1950 MHz center frequency with a -1 dB flat bandwidth of 10 MHz (Q ≈ 200), a shape factor (30–3 dB) of 2.5, and can be tuned in the range 1800–2050 MHz, with constant insertion loss. A dynamic range of about 75 dB is obtained, with a P1dB compression point of -5 dBm. The prototype board, fabricated on a TLX-8 substrate, has a 4 mW power consumption with a 1.2 V power supply voltage.

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A. Elwi, Taha. "Nano-Scale Vee Yagi-UDA Antenna Based Nano Shell-Silver Coated Silica for Tunable Solid –State Laser Applications." DJES 12, no. 1 (March 1, 2019): 1–6. http://dx.doi.org/10.24237/djes.2019.12101.

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A numerical study on the performance of the nano-scale antenna based on VeeYagi-Uda geometry that is constructed from Nano Shell-Silver Coated Silica (NSSCS) chains is investigated for tunable solid-state laser applications. In this study, a Finite Integral Technique (FIT) based on the formulations of Computer Simulator Technology-MicroWave Studio (CST MWS) software package is invoked to evaluate the antenna parameters such as: Reflection coefficient (S11), gain/ directivity, and directivity. Before conducting the simulation study, the refractive index properties of the NSSCS are evaluated according to Lorentz distribution function of a hetero-structure junction. The proposed antenna shows three resonance modes at 75 THz, and 175 THz, and 266 THz. It is found the best antenna matching, S11<-10dB, at 75 THz and 175 THz about -23 dB and -15 dB, respectively. However, at 266 THz, it is found -3 dB in max. The antenna shows acceptable gain values at the three considered frequencies about 2.5 dBi, 3.5 dBi, and 2 dBi, consistently. Therefore, the antenna exhibits a high directivity at 175 THz and 266 THz in comparison to the first mode at 75 THz. Next, a matching circuit is coupled to a nano-circuitry to tune antenna around 175 THz. The maximum emitted electric field is found to be around 175 THz. Finally, it is found that the introduction of the matching circuit has a significant tuning ability on the second mode at 175 THz; however, at the other two modes the tuning does not show a significant change

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Al-Yasir, Yasir I. A., Naser Ojaroudi Parchin, Yuxiang Tu, Ahmed M. Abdulkhaleq, Issa T. E. Elfergani, Jonathan Rodriguez, and Raed A. Abd-Alhameed. "A Varactor-Based Very Compact Tunable Filter with Wide Tuning Range for 4G and Sub-6 GHz 5G Communications." Sensors 20, no. 16 (August 13, 2020): 4538. http://dx.doi.org/10.3390/s20164538.

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A very compact microstrip reconfigurable filter for fourth-generation (4G) and sub-6 GHz fifth-generation (5G) systems using a new hybrid co-simulation method is presented in this manuscript. The basic microstrip design uses three coupled line resonators with λ/4 open-circuited stubs. The coupling coefficients between the adjacent and non-adjacent resonators are used to tune the filter at the required center frequency to cover the frequency range from 2.5 to 3.8 GHz. The coupling coefficient factors between the adjacent resonators are adjusted to control and achieve the required bandwidth, while the input and output external quality factors are adjusted to ensure maximum power transfer between the input and output ports. Two varactor diodes and biasing circuit components are selected and designed to meet the targeted performance for the tunable filter. The impedance bandwidth is maintained between 95 and 115 MHz with measured return losses of more than 17 dB and measured insertion loss of less than 1 dB. Computer simulation technology (CST) is utilized to design and optimize the presented reconfigurable filter, with hybrid co-simulation technique, using both CST microwave studio (MWS) and CST design studio (DS), is applied to build the model by considering the SPICE representation for the varactor switches and all electronic elements of the biasing circuit. The introduced reconfigurable microstrip filter is also fabricated using a Rogers RO3010 material with a relative dielectric constant of 10.1 and it is printed on a very compact size of 13 × 8 × 0.81 mm3. An excellent agreement is obtained between the simulation and measurement performance.

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Zhou, Hao-Miao, Jing Lian, and Feng-Jie Zhu. "The lumped equivalent circuit model of the multi-passband tunable microwave magnetoelectric filters." Journal of Applied Physics 116, no. 6 (August 14, 2014): 063904. http://dx.doi.org/10.1063/1.4892938.

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Zhou, Hao-Miao, Qiu-Shi Zhang, Jing Lian, and Xiao-Hong Li. "A Lumped Equivalent Circuit Model for Symmetrical T-Shaped Microstrip Magnetoelectric Tunable Microwave Filters." IEEE Transactions on Magnetics 52, no. 10 (October 2016): 1–9. http://dx.doi.org/10.1109/tmag.2016.2577550.

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Krival’, I. I., A. I. Skripnyuk, A. V. Rudkovskiy, V. A. Protsenko, and O. A. Prisyazhnyuk. "Aspects of modernization of UA Ч3-101 frequency meter." Технология и конструирование в электронной аппаратуре, no. 1-2 (2020): 3–7. http://dx.doi.org/10.15222/tkea2020.1-2.03.

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JSC «Meridian» n. a. S. P. Korolyov at one point developed and mass-produced a wide-range microwave frequency meter of the 8-mm wavelength range UA Ч3-101. Over time, however, the device has become obsolete for a number of reasons, and the question arose of the need to replace it. Since the cost of foreign models of frequency meters with similar parameters available on the market is quite high, the enterprise’s capabilities in solving this issue were considered. The analysis showed that the development of a new similar frequency meter will also be quite expensive, but the modernization of the existing one might be much cheaper, since the enterprise has all the infrastructure for serial production of the upgraded frequency meter. This article describes technical solutions for the replacement of labor-consuming microwave components of the UA Ч3-101 frequency meter, such as microstrip and waveguide input microwave converters, as well as optimization of the frequency measuring process of the input signal, which allowed us to upgrade the device according to the requirements. The use of the developed broadband small-sized frequency converter in the modernized UA Ч3-101A frequency meter made it possible to simplify the circuit and the frequency measurement process as much as possible, to use only one input microwave converter, to significantly reduce the weight and size of the device, to abandon the labor-consuming and expensive waveguide components of the device, and to double the sensitivity upgraded frequency meter. The proposed technical solution allowed simplifying the production process of the frequency meter, making the device more convenient to use. In addition, due to the optimization of circuit and design solutions in the upgraded frequency meter, it was possible to combine the counter and the gate driver on the same board, combine the reference frequency block with a 100 MHz tunable generator, abandon the switch, which allowed reducing power consumption and increasing the reliability of the device.

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Herrmann, Johannes, Marc A. Appleton, Kento Sasaki, Yasuaki Monnai, Tokuyuki Teraji, Kohei M. Itoh, and Eisuke Abe. "Polarization- and frequency-tunable microwave circuit for selective excitation of nitrogen-vacancy spins in diamond." Applied Physics Letters 109, no. 18 (October 31, 2016): 183111. http://dx.doi.org/10.1063/1.4967378.

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Zhou, Hao-Miao, and Jing Lian. "A generalized lumped-element equivalent circuit for tunable magnetoelectric microwave devices with multi-magnetoelectric laminates." Journal of Applied Physics 115, no. 19 (May 21, 2014): 193908. http://dx.doi.org/10.1063/1.4878160.

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Arnedo, Israel, Iván Arregui, Magdalena Chudzik, Fernando Teberio, Aintzane Lujambio, David Benito, Txema Lopetegi, and Miguel A. G. Laso. "Passive Microwave Component Design Using Inverse Scattering: Theory and Applications." International Journal of Antennas and Propagation 2013 (2013): 1–10. http://dx.doi.org/10.1155/2013/761278.

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We briefly review different synthesis techniques for the design of passive microwave components with arbitrary frequency response, developed by our group during the last decade. We provide the theoretical foundations based on inverse scattering and coupled-mode theory as well as several applications where the devices designed following those techniques have been successfully tested. The main characteristics of these synthesis methods are as follows. (a) They are direct, because it is not necessary to use lumped-element circuit models; just the target frequency response is the starting point. (b) They are exact, as there is neither spurious bands nor degradation in the frequency response; hence, there is no bandwidth limitation. (c) They are flexible, because they are valid for any causal, stable, and passive transfer function; only inviolable physical principles must be guaranteed. A myriad of examples has been presented by our group in many different technologies for very relevant applications such as harmonic control of amplifiers, directional coupler with enhanced directivity and coupling, transmission-type dispersive delay lines for phase engineering, compact design of high-power spurious free low-pass waveguide filters for satellite payloads, pulse shapers for advanced UWB radar and communications and for novel breast cancer detection systems, transmission-typeNth-order differentiators for tunable pulse generation, and a robust filter design tool.

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Cenac, A., L. Nenert, L. Billonnet, B. Jarry, and P. Guillon. "MMIC broadband analog phase shifter and gain circuit for frequency-tunable microwave planar multipole active filter categories." Microwave and Optical Technology Letters 25, no. 5 (June 5, 2000): 311–18. http://dx.doi.org/10.1002/(sici)1098-2760(20000605)25:5<311::aid-mop7>3.0.co;2-f.

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Harz, Thomas, Thomas Kleine-Ostmann, and Thorsten Schrader. "Design of a continuously tunable reflectarray element for 5G metrology in the k-band." Advances in Radio Science 18 (December 10, 2020): 1–5. http://dx.doi.org/10.5194/ars-18-1-2020.

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Abstract. We introduce a new tunable reflectarray element for an operation frequency of 26 GHz in the k-band. It is shown that a 340∘ continuous tunning range of the reflected wave can be accomplished by using an aperture-coupled patch antenna with only one single varactor diode. The simplified design and the small needed space make it usable for k-band reflectarrays with many elements. The functionality of the reflectarray element is explained and the crucial parts are analyzed. The approach to get a full phase shift is discussed in detail. A bias-T is developed to provide the control voltage to the varactor diode without interfering with the high frequency path. The high frequency path and the DC-path are decoupled by 39 dB using a bias-T. A commercial off-the-shelf varactor diode is selected and its functionality at 26 GHz is verified. Therefore, a test printed circuit board with through, reflect, line standards is developed to de-embed the varactor diode and to evaluate it with a vector network analyzer. The reflectarray is simulated in a unit cell with plane wave excitation and periodic boundary condition using the simulation software package CST Microwave Studio™.

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Skuratovskiy, I., O. Khazov, and A. Shakhova. "A resonant short-circuit plunger as part of tunable waveguide-dielectric and waveguide-coaxial resonators built around cylindrical evanescent waveguides." RADIOFIZIKA I ELEKTRONIKA 26, no. 2 (2021): 46–53. http://dx.doi.org/10.15407/rej2021.02.046.

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Subject and Purpose. Tunable resonant structures make numerous microwave devices, among which are waveguide-dielectric and waveguide-coaxial resonators (WDR and WCR) built around cylindrical evanescent waveguides and involving a resonant short-circuit (RSC) plunger for tuning purposes. The present paper seeks to study specific features of the RSC-plunger operation in the evanescent waveguide and estimate the RSC-plunger efficiency. Method and Methodology. The RSC-plunger efficiency is approximately estimated in terms of the transmission line theory. Comparative experimental verification of the Q-factor increase is provided by an example of a 3 cm WDR resonator equipped with a RSC-plunger. Results. It has been shown that relevant formulae of the transmission line theory can be extended for the RSC-plunger efficiency estimation on the TEM and H11 oscillations. A possibility has been studied of the TEM type transformation to the H11 oscillation and back when the spurious resonance of the RSC-plunger falls within the WDR (WCR) tuning range. Conclusion. Insignificance of the effect that small deviations from the numerically predicted dimensions of the RSC-plunger exert on the RSC-plunger operation efficiency has been demonstrated. The RSC-plunger efficiency and a possibility to remove the spurious resonances from the resonator tuning range have been experimentally confirmed.

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32

Bernigaud, J. F., P. Laurent, N. Martin, C. Quendo, G. Tanne, B. Della, F. Huret, and Ph Gelin. "Implementation of tunable microwave planar circuits based on liquid crystal." Frequenz 61, no. 9-10 (January 1, 2007). http://dx.doi.org/10.1515/freq.2007.61.9-10.224.

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33

Chapman, Benjamin J., Eric I. Rosenthal, Joseph Kerckhoff, Bradley A. Moores, Leila R. Vale, J. A. B. Mates, Gene C. Hilton, Kevin Lalumière, Alexandre Blais, and K. W. Lehnert. "Widely Tunable On-Chip Microwave Circulator for Superconducting Quantum Circuits." Physical Review X 7, no. 4 (November 22, 2017). http://dx.doi.org/10.1103/physrevx.7.041043.

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34

Dionne, Gerald F., and Daniel E. Oates. "Ferrite Properties and Technology Issues for Improved Microwave Systems." MRS Proceedings 833 (2004). http://dx.doi.org/10.1557/proc-833-g4.6.

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ABSTRACTMicrowave device engineers continually seek materials advances to improve performance of magnetic components at reduced size and cost. Wherever possible, microstrip or stripline device configurations are adopted in preference to bulky waveguide structures. In radar and communications applications, the nonreciprocal propagation properties of ferrites are essential for realizing phase shifters, circulators, isolators, and power limiters. The introduction of superconductor circuits has led to the development of very low-loss phase shifters and circulators. Recent demonstrations of tuning reciprocal rf permeability by varying the state of magnetization at very low magnetic fields has led to the development of high-speed, high-Q tunable filters. In this paper, design issues of four classes of microwave device are reviewed from the standpoint of their ferrite material requirements: (1) low-loss microstrip phase shifters (2) microstrip tunable resonators, (3) self-biased microstrip circulators with normal or in-plane uniaxial anisotropy, and (4) high-power quasi-optical circulators.

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35

Alzahrani, S., and T. S. Kalkur. "A Tunable Bandstop Filter Using Thin Film Barium-Strontium-Titanate Varactors." MRS Proceedings 1691 (2014). http://dx.doi.org/10.1557/opl.2014.745.

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AbstractFerroelectric barium-strontium-titanate (BST) varactors are becoming extremely important particularly for frequency-agile RF and microwave circuits. Tunable bandstop filters are desired to eliminate unwanted signals for several communication systems. In this paper, a compact tunable bandstop filter (BSF) based on a single hairpin resonator, using ferroelectric BST varactors, is also presented. The frequency response of proposed BSF can be adjusted by increasing or decreasing the length, width, and space for the coupled line hairpin resonator. One pair of variable capacitors has been incorporated to the filter for tuning and miniaturization purposes. The notch frequency of BSF can be tuned from 705 MHz to 1.035 GHz with a tuning voltage of 6 Volts utilizing BST varactors.

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36

McKnight, Stephen W., Steven A. Oliver, Hoton How, and Carmine Vittoria. "Planar Ferrite Materials for Millimeter-Wave Applications." MRS Proceedings 631 (2000). http://dx.doi.org/10.1557/proc-631-aa2.4.

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ABSTRACTTransferred-film technology provides a path to the integration of self-biased hexaferrite film devices into MMIC circuits. While progress is being made on the growth of thick oriented films of barium hexaferrite doped with aluminum and scandium by pulsed laser deposition or liquidphase epitaxy, we have demonstrated prototype devices using available yttrium-iron-garnet films and thinned bulk hexaferrites. Insertion losses less than 2dB and isolation greater than 20dB have been demonstrated, and theoretical modeling indicates that insertion losses less than 0.5 dB are accessible with optimized materials and through matching the active circuit components to the ferrite device. The prospects of accessing ferrite non-reciprocal, non-linear, and tunable functions at frequencies up to and exceeding 100 GHz through devices integrated onto microwave IC substrates without the use of DC biasing magnets are the driving force of this research.

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37

Oates, D. E., A. C. Anderson, and G. F. Dionne. "Magnetically Tuned Superconducting Filters." MRS Proceedings 603 (1999). http://dx.doi.org/10.1557/proc-603-113.

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AbstractWe have demonstrated magnetically tunable superconducting filters consisting of microwave circuits coupled to ferrite substrates in monolithic structures using both niobium at 4 K and YBCO at 77 K. A three-pole 1% bandwidth filter with 10-GHz center frequency, 1-dB insertion loss, and greater than 10% tunability has been demonstrated. Operation of the ferrite in the partially magnetized state prevents degradation of the surface resistance of the superconductor. This technology has the potential for compact, light weight, multipole filters with very low insertion loss, <0.5 dB, and very rapid tunability, <1 µs, due to the low inductance of the magnetic circuits. We also discuss the use of lightly coupled ferroelectric films to introduce trimming of the individual resonators in the magnetically tuned filters. The materials issues that limit performance and means to improve present performance are discussed.

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38

Horwitz, J. S., J. M. Pond, B. Tadayan, R. C. Y. Auyeung, P. C. Dorsey, D. B. Chrisey, S. B. Qadri, and C. Muller. "SrxBa(1−x)TiO3 Thin Films for Active Microwave Applications." MRS Proceedings 361 (1994). http://dx.doi.org/10.1557/proc-361-515.

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ABSTRACTThe dielectric constant, loss tangent and Curie temperature for SrxBa(1−x)TiO3 (SBT) thin films with x = 0.2 – 0.8 have been investigated at microwave frequencies. SBT films (0.5 -3 μm thick) were grown on (100) MgO and LaAlO3 substrates by pulsed laser deposition at substrate temperatures from 850 – 900 °C in 0.35 Torr of oxygen. Deposited ferroelectric films were single phase, highly oriented, and characterized by x-ray rocking curve widths of < 0.5°. Highly oriented SBT films with x-ray rocking curve widths of 72 arc seconds were observed. In general, the thin film dielectric constant at microwave frequencies is low (200–950) compared to the reported bulk value, but strongly dependent on the Sr/Ba ratio. Biasing of a ferroelectric interdigital capacitor (< 200 kV/cm) produces a change in the dielectric constant which resulted in a phase shift in the reflected signal (S11) measured as a function of frequency from 100 MHz to 10 GHz. The dielectric loss tangent measurement, as measured at room temperature and 9.2 GHz, ranges from 0.1 to 1.2 × 10−3 and depends on the Sr/Ba ratio. These data show that SBT thin films are suitable for the development of frequency tunable microwave circuits and components.

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39

Chang, W., J. S. Horwitz, J. M. Pond, S. W. Kirchoefer, and D. B. Chrisey. "Pulsed Laser Deposition of BaxSr1-xTiO3 Thin Films for Frequency Agile Microwave Electronics." MRS Proceedings 526 (1998). http://dx.doi.org/10.1557/proc-526-205.

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AbstractOriented, single phase thin films (~5000Å thick) of BaxSr1-xTiO3 (BST) have been deposited on to (100) MgO and LaAlO3 (LAO) single crystal substrates using pulsed laser deposition (PLD). A strong correlation is observed between the microstructure of the deposited film and the dielectric tuning and loss at microwave frequencies. Microstructural defects observed in as deposited films include strain, due to film substrate lattice mismatch and oxygen and cation vacancies. Compensation of the ablation target with excess Ba and Sr is observed to increase the dielectric constant and to reduce the dielectric loss. Post-deposition, bomb annealing of films at high temperatures (1250°C) is observed to fill oxygen vacancies and increase grain size. The difference in the dielectric behavior for as-deposited and low temperature annealed BST films on MgO and BST films on LAO is observed and may be attributed to the differences in film stress. A further improvement in the dielectric behavior is observed by the addition of donor/acceptor dopants such as Mn. The data shows that ferroelectric thin films can be used to build tunable microwave circuits that offer significant performance advantages over devices made from conventional semiconducting materials.

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40

Marson, Ryan, Bijoy K. Kuanr, Sanjay R. Mishra, Robert E. Camley, and Zbigniew Celinski. "Novel Planer Microwave Circuit Applications and Characterization of Ni Nanowires." MRS Proceedings 1058 (2007). http://dx.doi.org/10.1557/proc-1058-jj03-06.

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ABSTRACTArrays of Ni nanorods were electrodeposited into alumina oxide templates with various lengths (11-50 micro meter) and fixed pore diameter (150 nm). The magnetization behavior of these rods were investigated with ferromagnetic resonance (FMR) techniques; fixed frequency (conventional FMR) and swept frequency (Network Analyzer FMR). Both resonance spectra indicate the presence of strong dipolar interaction between the nanorods. The fundamental magnetic parameters like spontaneous magnetization, gyromagnetic ratio, and magnetic anisotropies of the nanorods were derived from the angular variation of resonance field data. Further, the use of nanorods as a tunable stop-band notch-filter in a coplanar waveguide geometry has been assessed. The stop-band frequency (fr) is observed to be tunable up to 24 GHz with an applied field (H) of up to 6 kOe. The theoretical fitting of fr(H)data to resonance relation yield values of effective field (Heff) and gyromagnetic ratio, which are a little higher than the conventional FMR results.

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41

Miranda, F. A., C. H. Mueller, F. W. Van Keuls, and R. R. Romanofsky. "Evaluation of Ferroelectric BaxSr1−xTiO3 Thin Films Driven by Phase Shifters for Reflectarray Applications." MRS Proceedings 656 (2000). http://dx.doi.org/10.1557/proc-656-dd1.3.

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ABSTRACTThe application of ferroelectric thin films for the development of frequency and phase agile microwave components has been the reason behind very encouraging demonstrations of tunable microwave devices in recent years. Thus, one could conclude with basically a general consensus, that the question of the suitability of thin film ferroelectric technology for the fabrication of superior tunable microwave components has been already answered in a favorable way. However, what is still pending in regards to the validation of this technology is the development of evaluation methodologies to set forth the standards for the material quality and subsequent performance criteria of specific components and devices based on this technology. In this paper we discuss the evaluation methodology under implementation at NASA Glenn Research Center aimed at identifying and optimizing the most relevant parameters of BaxSr1−xTiO3 (BSTO) ferroelectric thin films (i.e., tunability, losses, thickness, crystalline quality, etc.) as defined by a specific microwave application (in our case, phase shifters for reflectarray antennas). Results of our material analysis based on X-ray diffraction and ellipsometry, and how these properties correlate with RF performance for a targeted circuit, will be presented.

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42

Dionne, Gerald F. "Ferrites for Tunable RF and Microwave Devices." MRS Proceedings 603 (1999). http://dx.doi.org/10.1557/proc-603-71.

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AbstractMicrowave systems for communications and radar require control of propagation of the rf signal. Devices that accomplish this function include phase shifters, isolators and circulators, and tunable filters. In many instances, these devices are magnetic and are based on the variable permeability of electrically insulating ferrimagnetic oxides (ferrites). Recent advances in microwave ferrite devices have featured superconductor circuitry that promises to virtually eliminate insertion losses due to rf surface resistance. Lower conduction losses allow the use of small lightweight microstrip configurations in place of traditional bulky waveguide structures. For operation at cryogenic temperatures ferrimagnetic spinels and garnets will require chemical alteration to realize the full potential of these devices. Challenges include the reduction of magnetocrystalline anisotropy to optimize switching energies and speeds, and the elimination of fast-relaxing impurities in the magnetic garnets that can increase magnetic losses and degrade resonator Q factors at low temperatures.

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43

Tilmans, Harrie A. C. "RF-MEMS: Materials and technology, integration and packaging." MRS Proceedings 783 (2003). http://dx.doi.org/10.1557/proc-783-b6.6.

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ABSTRACTMEMS technology is rapidly emerging as an enabling technology to yield a new generation of highperformance RF-MEMS passives, like switches, tunable capacitors, high-Q resonators and tunable filters. This paper presents the progress in RF-MEMS device and package development with focus on relevant technology and material issues. The importance of wafer-level or 0-level packaging of the RF-MEMS devices is elucidated. Examples of 1-level packaging, e.g., chip-on-board or plastic molded 1-level package, are briefly described. The paper concludes in stipulating how integration of RF-MEMS passives with other passives (as inductors, LC filters, SAW devices) and active circuitry (RFICs) can lead to so-called “RF-MEMS system-in-a-package (RF-MEMS-SiP)” modules. The evolution of the RF-MEMS-SiP technology is illustrated using IMEC's microwave multi-layer thin film MCM-D technology.

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44

Zeytinoğlu, S., M. Pechal, S. Berger, A. A. Abdumalikov, A. Wallraff, and S. Filipp. "Microwave-induced amplitude- and phase-tunable qubit-resonator coupling in circuit quantum electrodynamics." Physical Review A 91, no. 4 (April 30, 2015). http://dx.doi.org/10.1103/physreva.91.043846.

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45

Xiao, Zhicheng, and Andrea Alù. "Tailoring exceptional points in a hybrid PT-symmetric and anti-PT-symmetric scattering system." Nanophotonics, July 26, 2021. http://dx.doi.org/10.1515/nanoph-2021-0245.

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Abstract Fano resonances feature an asymmetric lineshape with controllable linewidth, stemming from the interplay between bright and dark resonances. They provide efficient opportunities to shape the scattering lineshape, but they usually lack flexibility and tunability and are hindered by loss in passive systems. Here, we explore a hybrid parity-time (PT) and anti-parity-time (APT) symmetric system supporting unitary scattering features with highly tunable Fano resonances. The PT-APT-symmetric system can be envisioned in nanophotonic and microwave circuit implementations, allowing for real-time control of the scattering lineshape and its underlying singularities. Our study shows the opportunities enabled by non-Hermitian platforms to control scattering lineshapes for a plethora of photonic, electronic, and quantum systems, with potential for high-resolution imaging, switching, sensing, and multiplexing.

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46

Mahmud, Ali, T. S. Kalkur, and N. Cramer. "RF Magnetron Sputtered Ba0.96Ca0.04Ti0.84Zr0.16O3 Thin Films for High Frequency Applications." MRS Proceedings 833 (2004). http://dx.doi.org/10.1557/proc-833-g1.2.

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ABSTRACTPerovskite ferroelectric thin films in the paraelectric state exhibit outstanding dielectric properties, even at high frequencies (>1 GHz). The tunable dielectric constant of ferroelectric thin films can be used to design frequency and phase agile components. High dielectric constant thin film ferroelectric materials in the paraelectric state have received enormous attention due to their feasibility in applications such as decoupling capacitors and tunable microwave capacitors; the latter application has been fueled by the recent explosion in wireless and satellite communications. This paper reportsBa0.96Ca 0.04Ti0.84Zr0.16O3 (BCTZ) thin films that were deposited on Pt electrodes using radio frequency magnetron sputtering at a low (450 °C) substrate temperature. Sputtered thin film BCTZ at low substrate temperature is compatible with conventional integrated circuit technology. The structural characterization of the deposited films was performed by x-ray diffraction. The electrical characterization of the films was achieved by capacitance-voltage, current-voltage, and S-parameter (via vector network analyzer) measurements. In addition, the effect of post annealing on the deposited films was investigated. A detailed understanding of both their processing and material properties is discussed for successful implementation in high frequency applications.

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47

Ahrenkiel, Richard K., and B. Lojek. "Analysis of Ion Implantation Damage in Silicon Wafers by a Contactless Microwave Diagnostic." MRS Proceedings 699 (2001). http://dx.doi.org/10.1557/proc-699-r4.2.

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AbstractRapid thermal annealing (RTA) of lattice damage created by heavy ion implantation damage is required to maintain the integrity of semiconductor material used for submicron-integrated circuit devices. A quick, efficient, and contactless diagnostic of the implantation damage is highly desirable in both research and production environments. A contactless measurement technique has been recently applied to this problem that uses a deeply penetrating low-frequency microwave probe frequency operating at 420 MHz. Here, we will demonstrate the use of this high frequency resonance-coupled photoconductive decay (RCPCD) technique, which, when combined with a tunable optical excitation source, enables us to map the radiation damage in boron and arsenic-implanted silicon wafers. We quantify the damage by mapping the minority-carrier lifetime as a function of optical penetration depth. In this work, we quickly and efficiently compared the effectiveness of various RTA processes by the RCPCD diagnostic.

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48

Grishin, Alexander M., Jang-Yong Kim, and Sergey I. Khartsev. "Processing and On-Wafer Measurements of Ferroelectric Interdigitated Tunable Microwave Capacitors." MRS Proceedings 811 (2004). http://dx.doi.org/10.1557/proc-811-d10.1.

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ABSTRACTNa0.5K0.5NbO3 (NKN) and Pb(Zr0.53Ti0.47)O3 (PZT) films have been grown by rf-magnetron sputtering and pulsed laser deposition techniques, correspondingly, on sapphire (Al2O3-0112, rcut), YAlO3 + 1% Nd (Nd:YAlO3-001), and quartz (Y+36°-cut) single crystal substrates. Interdigital capacitor (IDC) of coplanar waveguide (CPW) structures were defined by a standard lift off technique in a Au(0.5μm)/Cr(10nm) electrode electron beam evaporated on ferroelectric film surface. IDCs consisted of five pairs of fingers separated by 2 and 4 μm gap. On-wafer microwave characterization was performed using a workbench equipped with a coplanar probe station (Cascade Microtech) with G-S-G (Ground-Signal-Ground) Picoprobe, a network analyzer (Agilent Technologies E8364A) operating in 45 MHz to 40 GHz range and programmable power supply for dc DUT (Device Under Test) biasing. Assumed equivalent circuit for the IDC/CPW structure contains planar capacitor under test C, the coplanar line with a complex impedance ς and a parasitic capacitance Cp between the signal and ground lines. The de-embedding technique has been employed to determine all six complex parameters C, ς and Cp from S-parameter measurements performed for three different device structures: device, open and thru. NKN film interdigital capacitors on sapphire show superior performance in this microwave range: the frequency dispersion was as low as 18%, voltage tunability = 1 – C(40V)/C(0) (40 V, 200 kV/cm) about 14%, loss tangent ∼ 0.11, K-factor = tunability/tanδ from 131% @ 10 GHz to 56% @ 40 GHz. The reliability of the de-embedding procedure is clearly proved by analysis of the frequency dependences of the parasitic capacitance and loss tangent as well as impedance of the coplanar line. Within the accuracy of experimental data and de-embedding calculations these values appear to be voltage independent: Cp ∼ 70 fF, tan δp changes from 0.07@10 GHz to 0.15@40 GHz; real and imaginary part of interconnect impedance increases with frequency from 0.16Ω@10 GHz to 0.36Ω@40 GHz and from 1.6Ω@10 GHz to 5.84Ω@40 GHz respectively.

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49

Kim, Dongsu, Yoonsu Choi, Mark G. Allen, J. Stevenson Kenney, David W. Stollberg, and David Kiesling. "An S-Band Reflection-Type Phase Shifter - A Design Example Using Ferroelectrics." MRS Proceedings 720 (2002). http://dx.doi.org/10.1557/proc-720-h5.3.

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AbstractOne of the challenges faced in using ferroelectrics in high frequency devices is how to effectively use the material in a circuit design. A compact reflection-type phase shifter fabricated on sapphire substrates coated with ferroelectric barium strontium titanate (BST) thin-films has been built which shows the promise of using BST thin films in the design of tunable microwave devices. The phase shifter, fabricated as one monolithic assembly, consists of a 3dB coupler, meandered line inductors and tunable interdigital capacitors. A continuously variable phase shift range of more than 100° using the branch-line coupler was obtained at a center frequency of 2.95 GHz, and more than 90° phase shift over 200 MHz bandwidth with a bias voltage range from 0 V to 175 V. The phase shifter using the Lange coupler has over 700 MHz bandwidth centered at 2.2 GHz with a phase shift of more than 90° and an insertion loss less than 2 dB and return loss of greater than 14 dB, over a bias voltage range from 0 V to 160 V. The loss of the BST phase shifter presented in this work is on the order of other commercially available RF front-end components, such as bandpass filters and RF switches. This holds promise for the practical realization of smart antenna systems in cellular handsets and wireless LAN cards.

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50

Noda, Minoru, Daniel Popovici, Masanori Okuyama, Yoshinobu Sasaki, and Makio Komaru. "An Application of a Low-Loss MOD-Made BST Film Developed Especially with PLD Initial Nucleation Layer to a 20 GHz Tunable Phase Shifter." MRS Proceedings 833 (2004). http://dx.doi.org/10.1557/proc-833-g1.5.

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ABSTRACTBarium Strontium Titanate (BST) thin films have been deposited on (100)-oriented MgO substrate by combining preparation of initial layer by Pulsed Laser Deposition and main layer by Metal-Organic-Decomposition method. Films with an initial layer of 20, 30 and 40 nm thickness and final thickness of 400, 650 and 800 nm have been obtained. Physical and dielectric properties of the BST thin films have been characterized from the viewpoint of frequency-agile micro and millimeter wave circuit applications. The results reveal that Ba0.6Sr0.4TiO3 thin films have a good crystallinity with characteristic orientation that is affected by the deposition conditions of the initial layer. Interdigital capacitor with a gap of 10 μm has been characterized and the dielectric loss and tunability are as low as 0.002 to 0.004 and 12%, respectively, at frequency of 1 MHz for the applied voltage from -/+40V to +/-40V. At microwave frequencies, classical coplanar waveguide lines formed on BST/(100)MgO were investigated. A differential phase shift of 18 degree was obtained at 20 GHz with insertion loss of about −2 dB at 60 V for Au/Cr interconnection. Finally, a 3-stage LC-ladder-type phase shifter with variable capacitors of BST thin film has been fabricated considering the experimental results obtained for the coplanar waveguide lines and a maximum phase shift of 40 degrees is obtained at 20 GHz at 60 V.

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Journal articles on the topic 'Tunable Microwave Circuits'

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