Relevant bibliographies by topics / Transition metal mixed chalcogenides

Academic literature on the topic 'Transition metal mixed chalcogenides'

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Published: 6 September 2023

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Journal articles on the topic "Transition metal mixed chalcogenides"

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Vante, N. Alonso, W. Jaegermann, H. Tributsch, W. Hoenle, and K. Yvon. "Electrocatalysis of oxygen reduction by chalcogenides containing mixed transition metal clusters." Journal of the American Chemical Society 109, no. 11 (May 1987): 3251–57. http://dx.doi.org/10.1021/ja00245a013.

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Singh, Harish, Manashi Nath, and McKenzie Marley Hines. "Development of High-Performance Electrode Materials for Supercapacitor Application through Combinatorial Electrodeposition." ECS Meeting Abstracts MA2022-01, no. 3 (July 7, 2022): 492. http://dx.doi.org/10.1149/ma2022-013492mtgabs.

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Electrochemical capacitors (ECs) are promising energy storage devices that have received great attention because of their excellent electrochemical performance with high output power, short discharging time, and long-term cycle stability. Metal chalcogenides (especially selenides and tellurides) are considered to be a new class of battery-like electrode materials and have contributed to ameliorate the electrochemical performance with better electronic conductivity and chemical stability. In the current investigation, a series of mixed transition metal-based chalcogenides have been grown directly on nickel foam by electrodeposition without the addition of a binder to the electrode composite. It was observed that the supercapacitor activity was dependent on the quantity of Cu and Co in the Cu-Co-Se ternary selenide electrocatalysts. Surprisingly, Cu–Co ternary selenides exhibit superior specific capacitance in comparison to their pure parent compounds, CoSe and Cu3Se2. Among the series of Cu–Co ternary selenides, the specific capacitance achieved for Cu0.6Co0.4Se2 showed the best specific capacitance value of 2063 F/g at a current density of 1 A/g and also maintained a cyclic stability of more than 90 % at a higher current density of 10 A/g after 1000 charge-discharge cycles. Moreover, doping effects at the transition metal site are also illustrated in this work and had a positive influence on the supercapacitor activity because, it led to lattice distortion, electronic structure modification, as well as helping to tune the surface redox behavior. The observed results clearly demonstrate that the binder free metal chalcogenide-based catalysts may be used as a potential electrode material for future energy storage devices. Figure 1
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Bokova, Maria, Steven Dumortier, Christophe Poupin, Renaud Cousin, Mohammad Kassem, and Eugene Bychkov. "Potentiometric Chemical Sensors Based on Metal Halide Doped Chalcogenide Glasses for Sodium Detection." Sensors 22, no. 24 (December 18, 2022): 9986. http://dx.doi.org/10.3390/s22249986.

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Chalcogenide glasses are widely used as sensitive membranes in the chemical sensors for heavy metal ions detection. The lack of research work on sodium ion-selective electrodes (Na+-ISEs) based on chalcogenide glasses is due to the high hygroscopicity of alkali dopes chalcogenides. However, sodium halide doped Ga2S3-GeS2 glasses are more chemically stable in water and could be used as Na+-sensitive membranes for the ISEs. In this work we have studied the physico-chemical properties of mixed cation (AgI)x(NaI)30-x(Ga2S3)26(GeS2)44 chalcogenide glasses (where x = 0, 7.5, 15, 22.5 and 30 mol.% AgI) using density, DSC, and conductivity measurements. The mixed cation effect with shallow conductivity and glass transition temperature minimum was found for silver fraction r = Ag/(Na + Ag) ≈ 0.5. Silver addition decreases the moisture resistance of the glasses. Only (AgI)22.5(NaI)7.5(Ga2S3)26(GeS2)44 composition was suitable for chemical sensors application, contrary to the single cation sodium halide doped Ga2S3-GeS2 glasses, where 15 mol.% sodium-halide-containing vitreous alloys are stable in water solutions. The analytical parameters of (NaCl)15(Ga2S3)23(GeS2)62; (NaI)15(Ga2S3)23(GeS2)62 and (AgI)22.5(NaI)7.5(Ga2S3)26(GeS2)44 glass compositions as active membranes in Na+-ISEs were investigated, including detection limit, sensitivity, linearity, ionic selectivity (in the presence of K+, Mg2+, Ca2+, Ba2+, and Zn2+ interfering cations), reproducibility and optimal pH-range.
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Antonov, V. N., L. V. Bekenov, and A. N. Yaresko. "Electronic Structure of Strongly Correlated Systems." Advances in Condensed Matter Physics 2011 (2011): 1–107. http://dx.doi.org/10.1155/2011/298928.

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The article reviews the rich phenomena of metal-insulator transitions, anomalous metalicity, taking as examples iron and titanium oxides. The diverse phenomena include strong spin and orbital fluctuations, incoherence of charge dynamics, and phase transitions under control of key parameters such as band filling, bandwidth, and dimensionality. Another important phenomena presented in the article is a valence fluctuation which occur often in rare-earth compounds. We consider some Ce, Sm, Eu, Tm, and Yb compounds such as Ce, Sm and Tm monochalcogenides, Sm and Yb borides, mixed-valent and charge-ordered Sm, Eu and Yb pnictides and chalcogenides R4X3and R3X4(R = Sm, Eu, Yb; X = As, Sb, Bi), intermediate-valence YbInCu4and heavy-fermion compounds YbMCu4(M = Cu, Ag, Au, Pd). Issues addressed include the nature of the electronic ground states, the metal-insulator transition, the electronic and magnetic structures. The discussion includes key experiments, such as optical and magneto-optical spectroscopic measurements, x-ray photoemission and x-ray absorption, bremsstrahlung isochromat spectroscopy measurements as well as x-ray magnetic circular dichroism.
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Boubeche, Mebrouka, Ningning Wang, Jianping Sun, Pengtao Yang, Lingyong Zeng, Shaojuan Luo, Yiyi He, et al. "Superconducting dome associated with the suppression and re-emergence of charge density wave states upon sulfur substitution in CuIr2Te4 chalcogenides." Journal of Physics: Condensed Matter 34, no. 20 (March 24, 2022): 205602. http://dx.doi.org/10.1088/1361-648x/ac594c.

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Abstract We report the path from the charge density wave (CDW)-bearing superconductor CuIr2Te4 to the metal insulator transition (MIT)-bearing compound CuIr2S4 by chemical alloying with the gradual substitution of S for Te. The evolution of structural and physical properties of the CuIr2Te4−x S x (0 ⩽ x ⩽ 4) polycrystalline system is systemically examined. The x-ray diffraction (XRD) results imply CuIr2Te4−x S x (0 ⩽ x ⩽ 0.5) crystallizes in a NiAs defected trigonal structure, whereas it adapts to the cubic spinel structure for 3.6 ⩽ x ⩽ 4 and it is a mixed phase in the doping range of 0.5 < x < 3.6. Unexpectedly, the resistivity and magnetization measurements reveal that small-concentration S substitution for Te can suppress the CDW transition, but it reappears around x = 0.2, and the CDW transition temperature enhances clearly as x augments for 0.2 ⩽ x ⩽ 0.5. Besides, the superconducting critical temperature (T c) first increases with S doping content and then decreases after reaching a maximum T c = 2.82 K for CuIr2Te3.85S0.15. MIT order has been observed in the spinel region (3.6 ⩽ x ⩽ 4) associated with T MI increasing with x increasing. Finally, the rich electronic phase diagram of temperature versus x for this CuIr2Te4−x S x system is assembled, where the superconducting dome is associated with the suppression and re-emergence of CDW as well as MIT states at the end upon sulfur substitution in the CuIr2Te4−x S x chalcogenides.
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Sedhain, Ram Prasad, and Gopi Chandra Kaphle. "STRUCTURAL AND ELECTRONIC PROPERTIES OF TRANSITION METAL DI-CHALCOGENIDES (MX2) M=(Mo, W) AND X=(S, Se) IN BULK STATE: A FIRST-PRINCIPLES STUDY." Journal of Institute of Science and Technology 22, no. 1 (July 18, 2017): 41–50. http://dx.doi.org/10.3126/jist.v22i1.17738.

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Transition metal di-chalcogenides (MX2) M=(Mo, W) and X=(S, Se) in bulk state are of great interest due to their diverse applications in the field of modern technology as well as to understand the fundamental aspect of Physics. We performed structural and electronic properties of selected systems using density functional theory implemented in Tight Binding Linear Muffin- tin Orbital (TBLMTO) approach with subsequent refinement. The structural optimization is performed through energy minimization process and lattice parameters of optimized structures for MoS2, MoSe2, WS2 and WSe2 are found to be 3.20Å, 3.34Å, 3.27Å and 3.34Å respectively, which are within the error bar less than 5% with experimental values. The band gaps for all TMDCs are found to be of indirect types with semiconducting behaviours. The values of band gap of MoS2, MoSe2, WS2 and WSe2 in bulk state are found to be 1.16eV, 108eV, 1.50eV and 1.29eV respectively which are comparable with experimental and previously calculated data. Due to the symmetric nature of up spin and down spin channels of Density of States (DOS) all the systems selected are found to be non magnetic. However it fully supports the results obtained from band structure calculations. The potential and charge distributions plots support the results. The charge density plots reveals the covalent nature of bond in (100) plane. However (110) plane shows mixed types of bonding.Journal of Institute of Science and TechnologyVolume 22, Issue 1, July 2017, page: 41-50
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Patil, S. M., S. R. Mane, R. M. Mane, S. S. Mali, P. S. Patil, and P. N. Bhosale. "Synthesis and X-ray photoelectron spectroscopy (XPS) and thermoelectric studies of ternary Bi2(Te0.5Se0.5)3 mixed-metal chalcogenide thin films by the arrested precipitation technique." Canadian Journal of Chemistry 89, no. 11 (November 2011): 1375–81. http://dx.doi.org/10.1139/v11-107.

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Arrested precipitation technique (APT) has been successfully employed for the deposition of Bi2(Te0.5Se0.5)3 thin films. Analytical grade bismuth nitrate complexes with triethanolamine (TEA), sodium tellurosulfite, and sodium selenosulfite were used as precursor materials. The film was obtained at 55 ± 0.5 °C in an aqueous alkaline medium (pH = 10.5 ± 0.2). As-deposited film was characterized by chemical compositional, optical, and electrical analyses. The optical absorption spectrum for the sample was recorded in the wavelength region 400–900 nm. It shows a high coefficient of absorption (α = 105 cm–1) with an allowed direct type of transition. X-ray diffraction (XRD) study of the film shows a nanocrystalline and rhombohedral structure. From scanning electron microscopy (SEM), atomic force microscopy (AFM), and energy dispersive X-ray analysis (EDAX) studies, the deposited film shows uniform morphology and good stoichiometry. X-ray photoelectron spectroscopy (XPS) was used to study the binding energy and surface oxidation of the material. Electrical conduction study shows that material is an n-type semiconductor and shows good thermoelectric figure of merit.
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Mitchell, Kwasi, and James A. Ibers. "Rare-Earth Transition-Metal Chalcogenides." Chemical Reviews 102, no. 6 (June 2002): 1929–52. http://dx.doi.org/10.1021/cr010319h.

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Varadwaj, Pradeep, Helder Marques, Arpita Varadwaj, and Koichi Yamashita. "Chalcogen···Chalcogen Bonding in Molybdenum Disulfide, Molybdenum Diselenide and Molybdenum Ditelluride Dimers as Prototypes for a Basic Understanding of the Local Interfacial Chemical Bonding Environment in 2D Layered Transition Metal Dichalcogenides." Inorganics 10, no. 1 (January 12, 2022): 11. http://dx.doi.org/10.3390/inorganics10010011.

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An attempt was made, using computational methods, to understand whether the intermolecular interactions in the dimers of molybdenum dichalcogenides MoCh2 (Ch = chalcogen, element of group 16, especially S, Se and Te) and similar mixed-chalcogenide derivatives resemble the room temperature experimentally observed interactions in the interfacial regions of molybdenites and their other mixed-chalcogen derivatives. To this end, MP2(Full)/def2-TVZPPD level electronic structure calculations on nine dimer systems, including (MoCh2)2 and (MoChCh′2)2 (Ch, Ch′ = S, Se and Te), were carried out not only to demonstrate the energetic stability of these systems in the gas phase, but also to reproduce the intermolecular geometrical properties that resemble the interfacial geometries of 2D layered MoCh2 systems reported in the crystalline phase. Among the six DFT functionals (single and double hybrids) benchmarked against MP2(full), it was found that the double hybrid functional B2PLYPD3 has some ability to reproduce the intermolecular geometries and binding energies. The intermolecular geometries and binding energies of all nine dimers are discussed, together with the charge density topological aspects of the chemical bonding interactions that emerge from the application of the quantum theory of atoms in molecules (QTAIM), the isosurface topology of the reduced density gradient noncovalent index, interaction region indicator and independent gradient model (IGM) approaches. While the electrostatic surface potential model fails to explain the origin of the S···S interaction in the (MoS2)2 dimer, we show that the intermolecular bonding interactions in all nine dimers examined are a result of hyperconjugative charge transfer delocalizations between the lone-pair on (Ch/Ch′) and/or the π-orbitals of a Mo–Ch/Ch′ bond of one monomer and the dπ* anti-bonding orbitals of the same Mo–Ch/Ch′ bond in the second monomer during dimer formation, and vice versa. The HOMO–LUMO gaps calculated with the MN12-L functional were 0.9, 1.0, and 1.1 eV for MoTe2, MoSe2 and MoS2, respectively, which match very well with the solid-state theoretical (SCAN-rVV10)/experimental band gaps of 0.75/0.88, 0.90/1.09 and 0.93/1.23 eV of the corresponding systems, respectively. We observed that the gas phase dimers examined are perhaps prototypical for a basic understanding of the interfacial/inter-layer interactions in molybdenum-based dichalcogenides and their derivatives.
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Huang, Yu Li, Wei Chen, and Andrew T. S. Wee. "Two‐dimensional magnetic transition metal chalcogenides." SmartMat 2, no. 2 (May 4, 2021): 139–53. http://dx.doi.org/10.1002/smm2.1031.

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Dissertations / Theses on the topic "Transition metal mixed chalcogenides"

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MONDOLONI, CHRISTIAN. "Contribution a l'etude de la valence anormale de l'ytterbium et du thulium dans yb : :(1-x)tm::(x)se et yb::(1-y)tm::(y)s." Paris 7, 1988. http://www.theses.fr/1988PA077122.

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Etude experimentale de l'instabilite de la valence des atomes de tm en fonction de la concentration dans les composes du titre. On mesure la valence des atomes de tm par susceptibilite magnetique et absorption rx, et on met en evidence une divergence de resultats par ces deux methodes. On met en evidence une transition metal-semiconducteur pour x=0,84, un ordre antiferromagnetique a 1,5 k, une magnetoresistivite negative. L'etude des sulfures amene a interpreter les proprietes de transport dans le domaine y >ou= 0,08 pour t>15 k par l'effet kondo
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Shaw, Graham Andrew. "Solvent mediated synthesis of metal chalcogenides." Thesis, University College London (University of London), 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.326065.

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Nahai-Williamson, Paul. "Tuning ordered states in transition metal chalcogenide systems." Thesis, University of Cambridge, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609901.

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Pickup, David M. "The structure and characterisation of amorphous transition-metal chalcogenides." Thesis, University of Reading, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308039.

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Berretil, Slimane. "Proprietes electroniques des semi-conducteurs magnetiques gamo : :(4)s::(8), gamo::(4)se::(8), gamo::(4)se::(4)te::(4) et ganb::(4)s::(8)." Paris 6, 1987. http://www.theses.fr/1987PA066262.

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Etudes effectuees en vue de preciser la nature des electrons qui participent ala conduction et au magnetisme de ces composes. Les composes, caracterises par la presence d'amas tetraedriques des ions metalliques mo et nb dans les bas etats d'oxydation, revelent des proprietes de magnetisme itinerant repondant au modele de stoner-wohlfarth avec les densites d'etats les plus elevees observees dans des composes intermetalliques 3d ou 4d. La rpe a confirme que les raies observees correspondant aux ions metalliques dans un etat s = 3/2 (ions mo**(3+) et nb**(3+)); leur elargissement est d'origine dipolaire retrecie par echange et les valeurs des integrales d'echange obtenues sont en bon accord avec celles obtenues a partir des temperatures de curie
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Nakanishi, Makoto. "Study of magnetic ordering of vanadium in layered transition metal chalcogenides." 京都大学 (Kyoto University), 2007. http://hdl.handle.net/2433/136959.

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Zhu, Bairen, and 朱柏仁. "Optical study on two dimensional transition metal dichalcogenides." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2014. http://hdl.handle.net/10722/208045.

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Atomically thin group-VI transition metal dichalcogenides (TMDC) has been emerging as a family of intrinsic 2-dimensional (2D) crystals with a sizeable bandgap in the visible and near infrared range, satisfying numerous requirements for ultimate electronics and optoelectronics. This intrinsic 2D crystal also provides a perfect platform for physics study in 2D semiconductors. The characteristic inversion symmetry breaking presented in monolayer TMDCs leads to non-zero but contrasting Berry curvatures and orbital magnetic moments at K/K’ valleys located at the corners of the first Brillouin zone. These features provide an opportunity to manipulate electrons’ additional internal degrees of freedom, namely the valley degree of freedom, making monolayer TMDC a promising candidate for the conceptual valleytronics. Besides, the strong spin-orbit interactions and the subsequent spin-valley coupling demonstrated in 2D TMDCs open potential new routes towards quantum manipulation. In this thesis, I give a brief review on the background and our progress of the physics study in 2D TMDCs (MoS2, WS2) via optical spectroscopy. Particularly, our experimental approach on the excitonic effect, valley dependent circular dichroism, and the spin-valley coupling in monolayer and bilayer TMDCs are elaborated in individual chapters.
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Physics
Doctoral
Doctor of Philosophy
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Tsang, Ka-yi, and 曾家懿. "Two dimensional transition metal dichalcogenides grown by chemical vapor deposition." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2014. http://hdl.handle.net/10722/212604.

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An atomically thin film of semiconducting transition metal dichalcogenides (TMDCs) is emerging as a class of key materials in chemistry and physics due to their remarkable chemical and electronic properties. The TMDCs are layered materials with weak out-of-plane van der Waals (vdW) interaction and strong in-plane covalent bonding enabling scalable exfoliation into two-dimensional (2D) layers of atomic thickness. The growth techniques to prepare these 2D TMDC materials in high yield and large scale with high crystallinity have attracted intensive attention recently because of the new properties and potentials in nano-elctronic, optoelectronic, spintronic and valleytronic applications. In this thesis, I develop methods for the chemical synthesis of 2D TMDCs films. The relevant growth mechanism and material characteristics of these films are also investigated. Molybdenum disulfide (MoS2) is synthesized by using molybdenum trioxide (MoO3) and sulfur (S) powder as the precursor. The films are formed on substrate pre-treated with reduced graphene oxide as the catalyst. However, this method cannot be extended to other TMDC materials such as molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2) because reduced graphene oxide (rGO) reacts with selenium to form alloy materials rather than TMDC films. At the same time, the conversion of MoO3 to MoSe2 or that of tungsten trioxide (WO3) to WSe2 without the assistance of hydrogen in the chemical reaction is not thermodynamically feasible because the oxygen in the metal oxide cannot be replaced by selenium due to lower reactivity of the latter. On the other hand, I demonstrate that MoSe2 film can be synthesized directly by using MoSe2 and Se powder. Furthermore, the method of sulfurization or selenization of pre-deposited metal film can be promising due to precise thickness/size controls. Finally, some perspectives on the engineering challenges and fabrication methods of this family of materials will be given.
published_or_final_version
Physics
Master
Master of Philosophy
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Walton, Richard I. "The characterisation and structure of amorphous and poorly crystalline transition-metal chalcogenides." Thesis, University of Reading, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.388467.

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Eaglesham, D. J. "Charge density waves and their phase transitions in the transition metal chalcogenides." Thesis, University of Bristol, 1985. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.375017.

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Books on the topic "Transition metal mixed chalcogenides"

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Jaegermann, W. Interfacial properties of semiconducting transition metal chalcogenides. Oxford: Pergamon, 1988.

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Highland, Ronald G. Spectroscopic properties of mixed-ligand chelates of closed-shell transition metal complexes. 1985.

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Book chapters on the topic "Transition metal mixed chalcogenides"

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Fitzpatrick, Brian J. "Transition Metal Chalcogenides." In Inorganic Reactions and Methods, 237–38. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470145333.ch165.

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Wold, Aaron, and Kirby Dwight. "Ternary Transition Metal Chalcogenides AB2X4." In Solid State Chemistry, 222–35. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1476-9_12.

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Kolobov, Alexander V., and Junji Tominaga. "Chalcogenides Nanoelectronics: Hype and Hope." In Two-Dimensional Transition-Metal Dichalcogenides, 529–31. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-31450-1_16.

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Kolobov, Alexander V., and Junji Tominaga. "Chemistry of Chalcogenides and Transition Metals." In Two-Dimensional Transition-Metal Dichalcogenides, 7–27. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-31450-1_2.

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Kaldis, E. "4f -Transition Metal (Rare Earth) Chalcogenides." In Inorganic Reactions and Methods, 253–55. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470145203.ch157.

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Alonso-Vante, Nicolas. "Transition Metal Chalcogenides for Oxygen Reduction." In Lecture Notes in Energy, 417–36. London: Springer London, 2013. http://dx.doi.org/10.1007/978-1-4471-4911-8_14.

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Page, E. M., and D. A. Rice. "From Transition-Metal Halides with Main-Group Chalcogenides." In Inorganic Reactions and Methods, 242–43. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2007. http://dx.doi.org/10.1002/9780470145180.ch158.

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Whangbo, M. H., D. K. Seo, and E. Canadell. "Structural and Electronic Instabilities of Transition Metal Chalcogenides." In Physics and Chemistry of Low-Dimensional Inorganic Conductors, 285–302. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-1149-2_17.

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Malterre, D., M. Grioni, and Y. Baer. "Photoemission Studies in Transition Metal Oxides and Chalcogenides." In Physics and Chemistry of Low-Dimensional Inorganic Conductors, 303–11. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-1149-2_18.

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González-Moraga, Guillermo. "Main Group-Transition Metal Mixed Clusters." In Cluster Chemistry, 177–201. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-642-85926-7_3.

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Conference papers on the topic "Transition metal mixed chalcogenides"

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Sharma, Ankit, Rutuparna Samal, C. S. Rout, and K. V. Adarsh. "Spin-Orbit Induced Crossover in Nonlinear Optical Response in Mixed Transition Metal Chalcogenides." In Frontiers in Optics. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/fio.2022.jtu4b.29.

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We demonstrated ultrafast nonlinear optical response in mixed-transition-metal chalcogenides. Our unprecedented results epitome the additional excitonic bands induced by the spin-orbit effect crossover the nonlinear response which can be used in optics and photonics applications.
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Giuffredi, Giorgio, Fabio Di Fonzo, Andrea Perego, Piero Mazzolini, Greta Tirelli, Mirko Prato, Francesco Fumagalli, et al. "Nanocrystalline, Mixed-Phase Transition Metal Oxide/Oxy-Chalcogenide Nanostructures for Efficient Hydrogen Evolution Electrocatalysis." In nanoGe Fall Meeting 2019. València: Fundació Scito, 2019. http://dx.doi.org/10.29363/nanoge.ngfm.2019.250.

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Di Fonzo, Fabio, Giorgio Giuffredi, Andrea Perego, Piero Mazzolini, Greta Tirelli, Mirko Prato, Francesco Fumagalli, et al. "Nanocrystalline, Mixed-Phase Transition Metal Oxide/Oxy-Chalcogenide Nanostructures for Efficient Hydrogen Evolution Electrocatalysis." In nanoGe Fall Meeting 2019. València: Fundació Scito, 2019. http://dx.doi.org/10.29363/nanoge.nfm.2019.250.

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Sutou, Y., S. Shindo, S. Hatayama, Y. Saito, and J. Koike. "Transition Metal-Ge-Te Chalcogenides for PCRAM Material." In 2017 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2017. http://dx.doi.org/10.7567/ssdm.2017.a-8-01.

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Khare, Ruchita T., Mahendra A. More, and Dattatray J. Late. "Transition metal di-chalcogenides and their nanocomposite prospective field emitters." In 2015 28th International Vacuum Nanoelectronics Conference (IVNC). IEEE, 2015. http://dx.doi.org/10.1109/ivnc.2015.7225545.

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Mirov, S. B., V. V. Fedorov, D. V. Martyshkin, I. S. Moskalev, M. S. Mirov, O. Gafarov, A. Martinez, et al. "Mid-IR gain media based on transition metal-doped II-VI chalcogenides." In SPIE OPTO, edited by Shibin Jiang and Michel J. F. Digonnet. SPIE, 2016. http://dx.doi.org/10.1117/12.2212822.

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Miyata, Kentaro, Masaki Yumoto, Yasushi Kawata, Satoshi Wada, and Shinichi Imai. "Noncritically phase-matched self-difference frequency generation using transition-metal doped chalcogenides." In Nonlinear Frequency Generation and Conversion: Materials and Devices XXII, edited by Peter G. Schunemann. SPIE, 2023. http://dx.doi.org/10.1117/12.2653039.

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Shimizu, Hiroshi, Jiang Pu, Zheng Liu, Hong En Lim, Yusuke Nakanishi, Takahiko Endo, Kazuhiro Yanagi, Taishi Takenobu, and Yasumitsu Miyata. "High mobility and 2D electron gas in aggregates of 1D transition metal chalcogenide atomic wires." In JSAP-OSA Joint Symposia. Washington, D.C.: Optica Publishing Group, 2021. http://dx.doi.org/10.1364/jsap.2021.10a_n305_8.

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Roy, Sayan, Zixuan Hu, Sabre Kais, and Peter Bermel. "Tailoring Donor-Acceptor Pairs of Tungsten-based Transition Metal Di-Chalcogenides (TMDCs) for Improved Photovoltaic Current Generation." In 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC). IEEE, 2019. http://dx.doi.org/10.1109/pvsc40753.2019.8981337.

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Doeff, Marca M., Thomas Conry, and James Wilcox. "Improved layered mixed transition metal oxides for Li-ion batteries." In SPIE Defense, Security, and Sensing, edited by Nibir K. Dhar, Priyalal S. Wijewarnasuriya, and Achyut K. Dutta. SPIE, 2010. http://dx.doi.org/10.1117/12.851228.

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Reports on the topic "Transition metal mixed chalcogenides"

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Ibers, James A. Final Report for Grant BES ER-15522. Actinide Transition-Metal Chalcogenides and Pnictides. Office of Scientific and Technical Information (OSTI), September 2013. http://dx.doi.org/10.2172/1093586.

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Marking, Gregory Allen. Studies of high temperature ternary phases in mixed-metal-rich early transition metal sulfide and phosphide systems. Office of Scientific and Technical Information (OSTI), January 1994. http://dx.doi.org/10.2172/10119308.

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