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Journal articles on the topic 'Transition metal dichalcogenide (TMD)'

Author: Grafiati

Published: 1 February 2025

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1

Chhowalla, Manish, Zhongfan Liu, and Hua Zhang. "Two-dimensional transition metal dichalcogenide (TMD) nanosheets." Chemical Society Reviews 44, no. 9 (2015): 2584–86. http://dx.doi.org/10.1039/c5cs90037a.

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2

Zhang, Xiao, Zhuangchai Lai, Qinglang Ma, and Hua Zhang. "Novel structured transition metal dichalcogenide nanosheets." Chemical Society Reviews 47, no. 9 (2018): 3301–38. http://dx.doi.org/10.1039/c8cs00094h.

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3

Cherusseri, Jayesh, Nitin Choudhary, Kowsik Sambath Kumar, Yeonwoong Jung, and Jayan Thomas. "Recent trends in transition metal dichalcogenide based supercapacitor electrodes." Nanoscale Horizons 4, no. 4 (2019): 840–58. http://dx.doi.org/10.1039/c9nh00152b.

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4

Rajabi Kouchi, Fereshteh, Tony Valayil Varghese, Josh Eixenberger, Amin Salehi-Khojin, and David Estrada. "Synthesis and Formulation of Ternary Transition Metal Dichalcogenide Alloys for Additive Electronic Manufacturing." ECS Meeting Abstracts MA2023-01, no. 16 (August 28, 2023): 1451. http://dx.doi.org/10.1149/ma2023-01161451mtgabs.

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Compared with the most investigated graphene, layered transition metal dichalcogenides (TMDs) have received significant attention due to their various chemical compositions and great potential electronic application. In order to tailor and engineer properties of TMDs and therefore enhance their efficiency toward commercial applications, several methods have been employed including reducing dimensionality, creating inter and intra-heterostructures, introducing inter stain, and alloying. Among these, alloying via chemical vapor transport (CVT) is scalable, cost- efficient, and controllable method of tuning TMD bulk crystal properties. Alloying of TMDs can be categorized into several types including metal replacement, dichalcogenide replacement, and both metal and dichalcogenide replacement. In a typical TMD CVT reaction, high-purity precursors are mixed in a desired stochiometric ratio, vacuumed, and sealed in an ampoule to form a closed system. The resulting TMD crystal can then be used for additional processes, e.g., exfoliation to yield 2D TMD nanosheets. Additive electronics manufacturing is a promising technique for the scalable fabrication of electronic devices, including sensors and energy storage devices. For an ink to be compatible for different printing modalities the ink rheology including viscosity, surface tension, and solid requires to be tuned to obtain suitable fluid dynamic parameters for jetting the ink. This work summarizes the development, synthesis, characterization, and formulation of two-dimensional ternary TMDCs ink for aerosol jet printing (AJP) technology. Ball milling assisted liquid exfoliation is utilized for synthesizing ternary TMDs nanomaterials under controlled condition. The resulting nanomaterial is developed into nanomaterial ink compatible with AJP. Detailed analysis of the material characterization and ink properties are required to optimize the fluid dynamics and properties of the ink. After printing the formulated ink using AJP on various substrates, post-printing process techniques is required to be investigated for printed nanomaterials inks to achieve bulk-like performance for the printed structures. Our results highlight the innovations in synthesis and formulation of ternary transition metal dichalcogenide nanomaterial inks for additive manufacturing of electronic devices such as sensors, solar cells, and energy storage devices.

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Yeh, Chen-Hao, Yu-Tang Chen, and Dah-Wei Hsieh. "Effects of external electric field on the sensing property of volatile organic compounds over Janus MoSSe monolayer: a first-principles investigation." RSC Advances 11, no. 53 (2021): 33276–87. http://dx.doi.org/10.1039/d1ra05764b.

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Gao, Chan, Xiaoyong Yang, Ming Jiang, Lixin Chen, Zhiwen Chen, and Chandra Veer Singh. "Machine learning-enabled band gap prediction of monolayer transition metal chalcogenide alloys." Physical Chemistry Chemical Physics 24, no. 7 (2022): 4653–65. http://dx.doi.org/10.1039/d1cp05847a.

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7

Zhang, Hanyu, Jaehoon Ji, Adalberto A. Gonzalez, and Jong Hyun Choi. "Tailoring photoelectrochemical properties of semiconducting transition metal dichalcogenide nanolayers with porphyrin functionalization." Journal of Materials Chemistry C 5, no. 43 (2017): 11233–38. http://dx.doi.org/10.1039/c7tc02861j.

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8

Zhao, Wen, Yuanchang Li, Wenhui Duan, and Feng Ding. "Ultra-stable small diameter hybrid transition metal dichalcogenide nanotubes X–M–Y (X, Y = S, Se, Te; M = Mo, W, Nb, Ta): a computational study." Nanoscale 7, no. 32 (2015): 13586–90. http://dx.doi.org/10.1039/c5nr02812d.

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9

Lee, Hyebin, Kookjin Lee, Yanghee Kim, Hyunjin Ji, Junhee Choi, Minsik Kim, Jae-Pyoung Ahn, and Gyu-Tae Kim. "Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applications." Nanoscale 11, no. 45 (2019): 22118–24. http://dx.doi.org/10.1039/c9nr05065e.

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10

Chen, Ruo-Si, Guanglong Ding, Ye Zhou, and Su-Ting Han. "Fermi-level depinning of 2D transition metal dichalcogenide transistors." Journal of Materials Chemistry C 9, no. 35 (2021): 11407–27. http://dx.doi.org/10.1039/d1tc01463c.

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11

Choudhury, Tanushree H., Xiaotian Zhang, Zakaria Y. Al Balushi, Mikhail Chubarov, and Joan M. Redwing. "Epitaxial Growth of Two-Dimensional Layered Transition Metal Dichalcogenides." Annual Review of Materials Research 50, no. 1 (July 1, 2020): 155–77. http://dx.doi.org/10.1146/annurev-matsci-090519-113456.

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Transition metal dichalcogenide (TMD) monolayers and heterostructures have emerged as a compelling class of materials with transformative properties that may be harnessed for novel device technologies. These materials are commonly fabricated by exfoliation of flakes from bulk crystals, but wafer-scale epitaxy of single-crystal films is required to advance the field. This article reviews the fundamental aspects of epitaxial growth of van der Waals–bonded crystals specific to TMD films. The structural and electronic properties of TMD crystals are initially described along with sources and methods used for vapor phase deposition. Issues specific to TMD epitaxy are critically reviewed, including substrate properties and film-substrate orientation and bonding. The current status of TMD epitaxy on different substrate types is discussed along with characterization techniques for large-areaepitaxial films. Future directions are proposed, including developments in substrates, in situ and full-wafer characterization techniques, and heterostructure growth.

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12

Eroglu, Zeynep Ezgi, Olivia Comegys, Leo S. Quintanar, Nurul Azam, Salah Elafandi, Masoud Mahjouri-Samani, and Abdelaziz Boulesbaa. "Ultrafast dynamics of exciton formation and decay in two-dimensional tungsten disulfide (2D-WS2) monolayers." Physical Chemistry Chemical Physics 22, no. 30 (2020): 17385–93. http://dx.doi.org/10.1039/d0cp03220d.

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13

Wang, Tao, Xiaoxing Tan, Yadong Wei, and Hao Jin. "Unveiling the layer-dependent electronic properties in transition-metal dichalcogenide heterostructures assisted by machine learning." Nanoscale 14, no. 6 (2022): 2511–20. http://dx.doi.org/10.1039/d1nr07747c.

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14

Wang, Zhendong, Hang Yang, Sihong Zhang, Jianyu Wang, Kai Cao, Yan Lu, Weiwei Hou, Shouhui Guo, Xue-Ao Zhang, and Li Wang. "An approach to high-throughput growth of submillimeter transition metal dichalcogenide single crystals." Nanoscale 11, no. 46 (2019): 22440–45. http://dx.doi.org/10.1039/c9nr07496a.

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High-throughput growth of large size transition metal dichalcogenide (TMD) single crystals is an important challenge for their applications in the next generation electronic and optoelectronic integration devices.

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15

Cao, Xuanyu, Caiping Ding, Cuiling Zhang, Wei Gu, Yinghan Yan, Xinhao Shi, and Yuezhong Xian. "Transition metal dichalcogenide quantum dots: synthesis, photoluminescence and biological applications." Journal of Materials Chemistry B 6, no. 48 (2018): 8011–36. http://dx.doi.org/10.1039/c8tb02519c.

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16

Huang, Pu, Zhuang Ma, Gui Wang, Wen Xiong, Peng Zhang, Yiling Sun, Zhengfang Qian, and Xiuwen Zhang. "Origin of the enhanced edge optical transition in transition metal dichalcogenide flakes." Journal of Materials Chemistry C 10, no. 13 (2022): 5303–10. http://dx.doi.org/10.1039/d2tc00078d.

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We reveal the enhanced optical transition at the S dimer edge of TMD flakes and provide a route to manipulate the transition eigenstates of abundant functional edge structures with applications in transition-controlled optoelectronic devices.

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17

Zhang, Yang, Trithep Devakul, and Liang Fu. "Spin-textured Chern bands in AB-stacked transition metal dichalcogenide bilayers." Proceedings of the National Academy of Sciences 118, no. 36 (September 2, 2021): e2112673118. http://dx.doi.org/10.1073/pnas.2112673118.

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While transition-metal dichalcogenide (TMD)–based moiré materials have been shown to host various correlated electronic phenomena, topological states have not been experimentally observed until now [T. Li et al., Quantum anomalous Hall effect from intertwined moiré bands. arXiv [Preprint] (2021). https://arxiv.org/abs/2107.01796 (Accessed 5 July 2021)]. In this work, using first-principle calculations and continuum modeling, we reveal the displacement field–induced topological moiré bands in AB-stacked TMD heterobilayer MoTe2/WSe2. Valley-contrasting Chern bands with nontrivial spin texture are formed from interlayer hybridization between MoTe2 and WSe2 bands of nominally opposite spins. Our study establishes a recipe for creating topological bands in AB-stacked TMD bilayers in general, which provides a highly tunable platform for realizing quantum-spin Hall and interaction-induced quantum anomalous Hall effects.

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18

Napoleonov, B., D. Petrova, P. Rafailov, V. Videva, V. Strijkova, D. Karashanova, D. Dimitrov, and V. Marinova. "Growth of 2D MoS₂ on sapphire and mica." Journal of Physics: Conference Series 2710, no. 1 (February 1, 2024): 012016. http://dx.doi.org/10.1088/1742-6596/2710/1/012016.

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Abstract In this work, we present a study on the epitaxial growth of MoS2 on both sapphire and mica substrates using the Chemical Vapor Deposition (CVD) method. The research focuses on optimizing the growth conditions in order to achieve reproducible results and explore the potential of conventional and Van der Waals epitaxy for synthesizing nanolayers and nanoclusters of transition metal dichalcogenides. By carefully selecting appropriately oriented substrates and performing targeted surface modification, we successfully achieved the desired epitaxial growth. The properties of the obtained structures are thoroughly investigated, with emphasis on their potential applications. This research contributes to the development of scalable and high-quality Transition Metal Dichalcogenide (TMD) growth technique, opening prospects for practical applications in various fields.

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19

Conti, Sara, David Neilson, François M. Peeters, and Andrea Perali. "Transition Metal Dichalcogenides as Strategy for High Temperature Electron-Hole Superfluidity." Condensed Matter 5, no. 1 (March 22, 2020): 22. http://dx.doi.org/10.3390/condmat5010022.

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Condensation of spatially indirect excitons, with the electrons and holes confined in two separate layers, has recently been observed in two different double layer heterostructures. High transition temperatures were reported in a double Transition Metal Dichalcogenide (TMD) monolayer system. We briefly review electron-hole double layer systems that have been proposed as candidates for this interesting phenomenon. We investigate the double TMD system WSe 2 /hBN/MoSe 2 , using a mean-field approach that includes multiband effects due to the spin-orbit coupling and self-consistent screening of the electron-hole Coulomb interaction. We demonstrate that the transition temperature observed in the double TMD monolayers, which is remarkably high relative to the other systems, is the result of (i) the large electron and hole effective masses in TMDs, (ii) the large TMD band gaps, and (iii) the presence of multiple superfluid condensates in the TMD system. The net effect is that the superfluidity is strong across a wide range of densities, which leads to high transition temperatures that extend as high as T B K T = 150 K.

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20

Kazemi, Seyedeh Alieh, Sadegh Imani Yengejeh, Vei Wang, William Wen, and Yun Wang. "Theoretical understanding of electronic and mechanical properties of 1T′ transition metal dichalcogenide crystals." Beilstein Journal of Nanotechnology 13 (February 2, 2022): 160–71. http://dx.doi.org/10.3762/bjnano.13.11.

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Transition metal dichalcogenides (TMDs) with a 1T′ layer structure have recently received intense interest due to their outstanding physical and chemical properties. While the physicochemical behaviors of 1T′ TMD monolayers have been widely investigated, the corresponding properties of layered 1T′ TMD crystals have rarely been studied. As TMD monolayers do not have interlayer interactions, their physicochemical properties will differ from those of layered TMD materials. In this study, the electronic and mechanical characteristics of a range of 1T′ TMDs are systematically examined by means of density functional theory (DFT) calculations. Our results reveal that the properties of 1T′ TMDs are mainly affected by their anions. The disulfides are stiffer and more rigid, diselenides are more brittle. In addition, the 1T′ polytype is softer than 2H TMDs. Comparison with the properties of the monolayers shows that the interlayer van der Waals forces can slightly weaken the TM–X covalent bonding strength, which can further influence the mechanical properties. These insights revealed by our theoretical studies may boost more applications of 1T′ TMD materials.

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21

Redwing, Joan M. "(Invited) Epitaxial Growth of Transition Metal Dichalcogenide Monolayers for Large Area Device Applications." ECS Meeting Abstracts MA2022-02, no. 15 (October 9, 2022): 824. http://dx.doi.org/10.1149/ma2022-0215824mtgabs.

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Wafer-scale epitaxial growth of semiconducting transition metal dichalcogenide (TMD) monolayers such as MoS2, WS2 and WSe2 is of significant interest for device applications to circumvent size limitations associated with the use of exfoliated flakes. Epitaxy is required to achieve single crystal films over large areas via coalescence of TMD domains. Our research has focused on epitaxial growth of 2D semiconducting TMDs on c-plane sapphire substrates using metalorganic chemical vapor deposition (MOCVD). Steps on the miscut sapphire surface serve as preferential sites for nucleation and can be used to induce a preferred crystallographic direction to the TMD domains which enables a reduction in twin boundaries in coalesced films. The step-directed growth is dependent on the surface termination of the sapphire which can be altered through pre-growth annealing in H2 and chalcogen-rich environments. Uniform growth of TMD monolayers with significantly reduced inversion domains is demonstrated on 2” diameter c-plane sapphire substrates enabling large area transfer of monolayers for characterization and device fabrication and testing. Applications for wafer-scale TMD monolayers in nanoelectronics, sensing and photonics will be discussed.

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22

Wei, Wei, Ying Dai, and Baibiao Huang. "In-plane interfacing effects of two-dimensional transition-metal dichalcogenide heterostructures." Physical Chemistry Chemical Physics 18, no. 23 (2016): 15632–38. http://dx.doi.org/10.1039/c6cp02741e.

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23

Lu, Ning, Hongyan Guo, Lei Li, Jun Dai, Lu Wang, Wai-Ning Mei, Xiaojun Wu, and Xiao Cheng Zeng. "MoS2/MX2 heterobilayers: bandgap engineering via tensile strain or external electrical field." Nanoscale 6, no. 5 (2014): 2879–86. http://dx.doi.org/10.1039/c3nr06072a.

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We have performed a comprehensive first-principles study of the electronic and magnetic properties of two-dimensional (2D) transition-metal dichalcogenide (TMD) heterobilayers MX₂/MoS₂ (M = Mo, Cr, W, Fe, V; X = S, Se).

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Gupta, Neelam, Saurav Sachin, Puja Kumari, Shivani Rani, and Soumya Jyoti Ray. "Twistronics in two-dimensional transition metal dichalcogenide (TMD)-based van der Waals interface." RSC Advances 14, no. 5 (2024): 2878–88. http://dx.doi.org/10.1039/d3ra06559f.

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The effects of twist on the structural, electronic and optical properties of some vertically stacked transition metal dichalcogenide heterostructures (namely MoSe2/WSe2, WS2/WSe2, MoSe2/WS2 and MoS2/WSe2) have been systematically explored.

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25

Kaviraj, Bhaskar, and Dhirendra Sahoo. "Physics of excitons and their transport in two dimensional transition metal dichalcogenide semiconductors." RSC Advances 9, no. 44 (2019): 25439–61. http://dx.doi.org/10.1039/c9ra03769a.

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Two-dimensional (2D) group-VI transition metal dichalcogenide (TMD) semiconductors, such as MoS₂, MoSe₂, WS₂ and others manifest strong light matter coupling and exhibit direct band gaps which lie in the visible and infrared spectral regimes.

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26

Li, Mingchen, Mingsheng Gao, Qing Zhang, and Yuanjie Yang. "Valley-dependent vortex emission from exciton-polariton in non-centrosymmetric transition metal dichalcogenide metasurfaces." Optics Express 31, no. 12 (May 26, 2023): 19622. http://dx.doi.org/10.1364/oe.490067.

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Transition metal dichalcogenides (TMDs) have attracted great attention in valleytronics. Owing to the giant valley coherence at room temperature, valley pseudospin of TMDs open a new degree of freedom to encode and process binary information. The valley pseudospin only exists in non-centrosymmetric TMDs (e.g., monolayer or 3R-stacked multilayer), which is prohibited in conventional centrosymmetric 2H-stacked crystals. Here, we propose a general recipe to generate valley-dependent vortex beams by using a mix-dimensional TMD metasurface composed of nanostructured 2H-stacked TMD crystals and monolayer TMDs. Such an ultrathin TMD metasurface involves a momentum-space polarization vortex around bound states in the continuum (BICs), which can simultaneously achieve strong coupling (i.e., form exciton polaritons) and valley-locked vortex emission. Moreover, we report that a full 3R-stacked TMD metasurface can also reveal the strong-coupling regime with an anti-crossing pattern and a Rabi splitting of 95 meV. The Rabi splitting can be precisely controlled by geometrically shaping the TMD metasurface. Our results provide an ultra-compact TMD platform for controlling and structuring valley exciton polariton, in which the valley information is linked with the topological charge of vortex emission, which may advance valleytronic, polaritonic, and optoelectronic applications.

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27

Maniyar, Ashraf, and Sudhanshu Choudhary. "Visible region absorption in TMDs/phosphorene heterostructures for use in solar energy conversion applications." RSC Advances 10, no. 53 (2020): 31730–39. http://dx.doi.org/10.1039/d0ra05810f.

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Heterostructures of pristine black phosphorene (P) with transition metal dichalcogenide (TMD) monolayers of MoS₂, MoSe₂, MoTe₂, WS₂, and WSe₂ are investigated using density functional theory based simulations.

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28

Chen, Zhigang, Zhengxu Tao, Shan Cong, Junyu Hou, Dengsong Zhang, Fengxia Geng, and Zhigang Zhao. "Fast preparation of ultrafine monolayered transition-metal dichalcogenide quantum dots using electrochemical shock for explosive detection." Chemical Communications 52, no. 76 (2016): 11442–45. http://dx.doi.org/10.1039/c6cc06325j.

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A simple, general and fast method called “electrochemical shock” is developed to prepare monolayered transition-metal dichalcogenide (TMD) QDs with an average size of 2–4 nm and an average thickness of 0.85 ± 0.5 nm with only about 10 min of ultrasonication.

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Hemanth, N. R., Taekyung Kim, Byeongyoon Kim, Arvind H. Jadhav, Kwangyeol Lee, and Nitin K. Chaudhari. "Transition metal dichalcogenide-decorated MXenes: promising hybrid electrodes for energy storage and conversion applications." Materials Chemistry Frontiers 5, no. 8 (2021): 3298–321. http://dx.doi.org/10.1039/d1qm00035g.

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TMD-decorated MXene hybrids have emerged as alternatives for energy storage and conversion applications. Herein, recent progress, role of the unique junctions of TMD–MXene hybrids and their challenges for further improvement has been reviewed.

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Jo, S. H., and J. H. Park. "High-Performance Photodetectors Using Transition Metal Dichalcogenide (TMD)-based Hybrid Structures." ECS Transactions 75, no. 13 (September 23, 2016): 73–77. http://dx.doi.org/10.1149/07513.0073ecst.

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31

Mukherjee, Santanu, Jonathan Turnley, Elisabeth Mansfield, Jason Holm, Davi Soares, Lamuel David, and Gurpreet Singh. "Exfoliated transition metal dichalcogenide nanosheets for supercapacitor and sodium ion battery applications." Royal Society Open Science 6, no. 8 (August 2019): 190437. http://dx.doi.org/10.1098/rsos.190437.

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Growing concerns regarding the safety, flammability and hazards posed by Li-ion systems have led to research on alternative rechargeable metal-ion electrochemical storage technologies. Among the most notable of these are Na-ion supercapacitors and batteries, motivated, in part, by the similar electrochemistry of Li and Na ions. However, sodium ion batteries (SIBs) come with their own set of issues, especially the large size of the Na + ion, its relatively sluggish kinetics and low energy densities. This makes the development of novel materials and appropriate electrode architecture of absolute significance. Transition metal dichalcogenides (TMDs) have attracted a lot of attention in this regard due to their relative ease of exfoliation, diverse morphologies and architectures with superior electronic properties. Here, we study the electrochemical performance of Mo-based two-dimensional (2D) layered TMDs (e.g. MoS 2 , MoSe 2 and MoTe 2 ), exfoliated in a superacid, for battery and supercapacitor applications. The exfoliated TMD flakes were interfaced with reduced graphene oxide (rGO) to be used as composite electrodes. Electron microscopy, elemental mapping and Raman spectra were used to analyse the exfoliated material and confirm the formation of 2D TMD/rGO layer morphology. For supercapacitor applications in aqueous electrolyte, the sulfide-based TMD (MoS 2 ) exhibited the best performance, providing an areal capacitance of 60.25 mF cm −2 . For SIB applications, TMD electrodes exhibited significantly higher charge capacities than the neat rGO electrode. The initial desodiation capacities for the composite electrodes are 468.84 mAh g −1 (1687.82 C g −1 ), 399.10 mAh g −1 (1436.76 C g −1 ) and 387.36 mAh g −1 (1394.49 C g −1 ) for MoS 2 , MoSe 2 and MoTe 2 , respectively. Also, the MoS 2 and MoSe 2 composite electrodes provided a coulombic efficiency of near 100 % after a few initial cycles.

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Chen, Hang, Tianjiao Liu, Zhiqiang Su, Li Shang, and Gang Wei. "2D transition metal dichalcogenide nanosheets for photo/thermo-based tumor imaging and therapy." Nanoscale Horizons 3, no. 2 (2018): 74–89. http://dx.doi.org/10.1039/c7nh00158d.

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Shim, Jaewoo, Sung woon Jang, Ji-Hye Lim, Hyeongjun Kim, Dong-Ho Kang, Kwan-Ho Kim, Seunghwan Seo, et al. "Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits." Nanoscale 11, no. 27 (2019): 12871–77. http://dx.doi.org/10.1039/c9nr03441b.

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We report a polarity controllable TMD transistor that can operate as both an n- and a p-channel transistor. We then demonstrate a complementary inverter circuit on a single TMD material and its expandability toward a three-stage ring oscillator.

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Wang, Zhen-Hua, Fuming Xu, Lin Li, Dong-Hui Xu, Wei-Qiang Chen, Bin Wang, and Hong Guo. "Spin–orbit proximity effect and topological superconductivity in graphene/transition-metal dichalcogenide nanoribbons." New Journal of Physics 23, no. 12 (December 1, 2021): 123002. http://dx.doi.org/10.1088/1367-2630/ac33f5.

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Abstract Spin–orbit coupling (SOC) plays a determinate role in spintronics and topological physics. Previous studies indicate that the SOC in graphene nanoribbon (GNR) can be enhanced by the proximity effect from two-dimensional transition-metal dichalcogenide (2D-TMD). However, the bulk inversion symmetry of GNR/2D-TMD restricts further increase of the proximity-induced SOC in GNR. In this view, we introduce a TMD nanoribbon (TMDNR) with finite width, and propose three methods to break the bulk inversion symmetry, i.e. defects in TMDNR, spatial interlayer edge coupling, and twist between GNR and TMDNR, which can further enhance the SOC in the GNR by roughly 30 times, 20 times and 150 times, respectively, depending on the relative energy between the Dirac point of GNR and the states of TMDNR. Furthermore, the significantly enhanced SOC can drive the GNR into a topological superconducting phase. By introducing the Zeeman splitting and s-wave superconductivity in the GNR, quasi one-dimensional topological superconductivity and Majorana zero modes (MZMs) can be achieved in the GNR. At last we propose a feasible experimental method to realize and manipulate MZMs in the GNR/TMDNR system.

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Goswami, P., and U. P. Tyagi. "Graphene-TMD Van der Waals Heterostucture Plasmonics." Journal of Scientific Research 12, no. 2 (February 1, 2020): 169–74. http://dx.doi.org/10.3329/jsr.v12i2.43685.

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The collective excitations of electrons in the bulk or at the surface, viz. plasmons, play an important role in the properties of materials, and have generated the field of “plasmonics”. We report the observation of a highly unusual plasmon mode on the surface of Van der Waals heterostructures (vdWHs) of graphene monolayer on 2D transition metal dichalcogenide (Gr-TMD) substrate. Since the exponentially decaying fields of surface plasmon wave propagating along interface is highly sensitive to the ambient refractive index variations, such heterostructures are useful for ultra-sensitive bio-sensing.

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Zhou, Hongzhi, Yuzhong Chen, and Haiming Zhu. "Deciphering asymmetric charge transfer at transition metal dichalcogenide–graphene interface by helicity-resolved ultrafast spectroscopy." Science Advances 7, no. 34 (August 2021): eabg2999. http://dx.doi.org/10.1126/sciadv.abg2999.

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Transition metal dichalcogenide (TMD)/graphene (Gr) heterostructures constitute a key component for two-dimensional devices. The operation of TMD/Gr devices relies on interfacial charge/energy transfer processes, which remains unclear and challenging to unravel. Fortunately, the coupled spin and valley index in TMDs adds a new degree of freedom to the charges and, thus, another dimension to spectroscopy. Here, by helicity-resolved ultrafast spectroscopy, we find that photoexcitation in TMDs transfers to graphene by asynchronous charge transfer, with one type of charge transferring in the order of femtoseconds and the other in picoseconds. The rate correlates well with energy offset between TMD and graphene, regardless of compositions and charge species. Spin-polarized hole injection or long-lived polarized hole can be achieved with deliberately designed heterostructures. This study shows helicity-resolved ultrafast spectroscopy as a powerful and facile approach to reveal the fundamental and complex charge/spin dynamics in TMD-based heterostructures, paving the way toward valleytronic and optoelectronic applications.

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Ivanova, Tatiana V., Dmitry Permyakov, and Ekaterina Khestanova. "Mechanical deformation of atomically thin layers during stamp transfer." Journal of Physics: Conference Series 2015, no. 1 (November 1, 2021): 012058. http://dx.doi.org/10.1088/1742-6596/2015/1/012058.

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Abstract The way transition metal dichalcogenide (TMD) strains during its transfer from one substrate to another is very interesting and holds a special place in the creation of heterostructures. In our work we observe the spectrum of photoluminescence in TMD during the transfer. For this we use a specially designed transfer system with inverted geometry. During transfer we observe a modification of exciton photoluminescence linewidth and resonance shift in atomically thin layers of TMD. We believe that our results lay grounds for the future work on the assessment of the atomically thin layer inhomogeneity introduced by the typical mechanical transfer.

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38

Su, Yuyu, Dan Liu, Guoliang Yang, Qi Han, Yijun Qian, Yuchen Liu, Lifeng Wang, Joselito M. Razal, and Weiwei Lei. "Transition Metal Dichalcogenide (TMD) Membranes with Ultrasmall Nanosheets for Ultrafast Molecule Separation." ACS Applied Materials & Interfaces 12, no. 40 (September 15, 2020): 45453–59. http://dx.doi.org/10.1021/acsami.0c10653.

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39

XIE, MAOHAI, and JINGLEI CHEN. "A SCANNING TUNNELING MICROSCOPY STUDY OF MONOLAYER AND BILAYER TRANSITION-METAL DICHALCOGENIDES GROWN BY MOLECULAR-BEAM EPITAXY." Surface Review and Letters 25, Supp01 (December 2018): 1841002. http://dx.doi.org/10.1142/s0218625x18410020.

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This review presents an account of some recent scanning tunneling microscopy and spectroscopy (STM/S) studies of monolayer and bilayer transition-metal dichalcogenide (TMD) films grown by molecular-beam epitaxy (MBE). In addition to some intrinsic properties revealed by STM/S, defects such as inversion domain boundaries and point defects, their properties and induced effects, are presented. More specifically, the quantum confinement and moiré potential effects, charge state transition, quasi-particle interference and structural phase transition as revealed by STM/S are described.

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40

Schmidt, Hennrik, Francesco Giustiniano, and Goki Eda. "Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects." Chemical Society Reviews 44, no. 21 (2015): 7715–36. http://dx.doi.org/10.1039/c5cs00275c.

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41

Sushko, Andrey, Kristiaan De Greve, Madeleine Phillips, Bernhard Urbaszek, Andrew Y. Joe, Kenji Watanabe, Takashi Taniguchi, et al. "Asymmetric photoelectric effect: Auger-assisted hot hole photocurrents in transition metal dichalcogenides." Nanophotonics 10, no. 1 (September 25, 2020): 105–13. http://dx.doi.org/10.1515/nanoph-2020-0397.

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AbstractTransition metal dichalcogenide (TMD) semiconductor heterostructures are actively explored as a new platform for quantum optoelectronic systems. Most state of the art devices make use of insulating hexagonal boron nitride (hBN) that acts as a wide-bandgap dielectric encapsulating layer that also provides an atomically smooth and clean interface that is paramount for proper device operation. We report the observation of large, through-hBN photocurrents that are generated upon optical excitation of hBN encapsulated MoSe2 and WSe2 monolayer devices. We attribute these effects to Auger recombination in the TMDs, in combination with an asymmetric band offset between the TMD and the hBN. We present experimental investigation of these effects and compare our observations with detailed, ab-initio modeling. Our observations have important implications for the design of optoelectronic devices based on encapsulated TMD devices. In systems where precise charge-state control is desired, the out-of-plane current path presents both a challenge and an opportunity for optical doping control. Since the current directly depends on Auger recombination, it can act as a local, direct probe of both the efficiency of the Auger process as well as its dependence on the local density of states in integrated devices.

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42

Bendavid, Leah Isseroff, Yilin Zhong, Ziyi Che, and Yagmur Konuk. "Strain-engineering in two-dimensional transition metal dichalcogenide alloys." Journal of Applied Physics 132, no. 22 (December 14, 2022): 225303. http://dx.doi.org/10.1063/5.0120484.

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Two-dimensional (2D) transition metal dichalcogenides (TMDs) are attractive semiconductors for use in electronic, optoelectronic, and spintronic devices. This study examines how the electronic properties of 2D TMDs can be tuned for specific applications through a combination of alloying and applying strain. Group VIB TMDs (MoS2, MoSe2, WS2, and WSe2) are alloyed by mixing in the metal or chalcogen sublattices. Density functional theory is used to model the structures of the alloys at varying compositions and examine the electronic structure of the alloys under biaxial tensile and compressive strain. Alloying results in the continuous monotonic tuning of the direct bandgap between the limits of the pure components, with low bowing coefficients for all alloys. Applying strain results in a transition of the bandgap from direct to indirect at low values of tensile strain and higher values of compressive strain. Strain can also be used to increase or decrease the bandgap with low compressive strain or tensile strain, respectively. The shift rate, or the rate at which the bandgap changes with applied strain, changes monotonically with alloy composition. MoS2 is identified as the 2D TMD with the highest shift rate.

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Ahmadi, Mojtaba, Omid Zabihi, Seokwoo Jeon, Mitra Yoonessi, Aravind Dasari, Seeram Ramakrishna, and Minoo Naebe. "2D transition metal dichalcogenide nanomaterials: advances, opportunities, and challenges in multi-functional polymer nanocomposites." Journal of Materials Chemistry A 8, no. 3 (2020): 845–83. http://dx.doi.org/10.1039/c9ta10130f.

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The functionalized TMD nanolayers have the potential to introduce multi-functionalities into polymer matrices, thus leading to the development of high-performance multi-functional composites/nanocomposites.

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Li, Dehui, Yingying Chen, Wendian Yao, Zeyi Liu, and Dong Yang. "(Invited) Interlayer Excitons in Two-Dimensional Perovskite/Monolayer Transition Metal Dichalcogenide Heterostructures." ECS Meeting Abstracts MA2023-02, no. 34 (December 22, 2023): 1639. http://dx.doi.org/10.1149/ma2023-02341639mtgabs.

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The emergence of two-dimensional (2D) materials has intrigued a great deal of research on novel physical phenomena and various functional applications due to their particular crystal structures and reduced dimensionality. Unlike 3D materials, bulks of 2D materials can be easily thinned to atomic thickness by mechanical exfoliation and atomically thin 2D materials can be arbitrarily stacked to form vertical van der Waals (vdW) heterostructures, which could inherit the unique characteristics of the constituent layers and even exhibit new properties not possessed by them. Particularly, when type-Ⅱ vdW heterostructures are excited, the positive and the negative charges would reside in the different layers after the charge transfer but be limited within a short distance due to the strong quantum confinement effect of 2D materials, leading to strong Coulomb interaction and the formation of interlayer excitons (IXs). IXs are generally equipped with orientated dipole moment and long lifetime, making them ideal media for the future interconnects between optical transmission and electronic computation. Currently, studies on IXs are mainly focused on the vdW heterostructures formed by monolayers of transition-metal dichalcogenides (TMDs). Here, I will first talk about vdW heterostructures formed by 2D perovskites and TMDs for studying IXs. Stacking different kinds of 2D perovskites and TMDs, formation of IXs is confirmed by excitation-power-, temperature-, electric-field-dependent and time-resolved photoluminescence (PL) studies. Notably, robust IX emission can be observed regardless of the stacking sequence and geometric alignment of the constituent layers, showing great advantages over the TMD/TMD vdW heterostructures, which require special twist-angle and thermal annealing. Then, I would like to give a brief introduction on widely tuning the IX emission energy by changing the layer number of the 2D perovskite or the TMD, which shed light on the application of 2D perovskite/TMD vdW heterostructures in broad-spectrum optoelectronics. Furthermore, I would like to next talk about how the selection of organic chains in 2D perovskites influences the properties of the IXs. By using chiral 2D perovskites, the IX emission shows substantial circular polarization and the polarization direction is only related to the chirality of the molecules regardless of the excitation scheme or any other external field, which could open up new passages for controlling valley- or spin-polarization of IXs. By introducing molecules with different dielectric constants, the dielectric screening strength in the vdW heterostructure is changed and hence the binding energy of the IXs is also modified, which offers great opportunities for exploiting tunable excitonic devices and studying exciton condensation. Finally, I will also introduce IX as a non-destructive tool for probing the local phase transition at the surface of the 2D perovskite (BA)2PbI4 flakes. By spatially PL mapping of the (BA)2PbI4/WSe2 heterostructure, two different IX species can be observed to distinguish the low-temperature and the high-temperature phase respectively.

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Lee, Jaeho, Jaehwan Lee, Seokwon Shin, Youngdoo Son, and Young-Kyu Han. "Machine Learning for the Expedited Screening of Hydrogen Evolution Catalysts for Transition Metal-Doped Transition Metal Dichalcogenides." International Journal of Energy Research 2023 (September 8, 2023): 1–11. http://dx.doi.org/10.1155/2023/6612054.

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Two-dimensional transition metal dichalcogenides (TMDs) have gained attention as potent catalysts for the hydrogen evolution reaction (HER). The traditional trial-and-error methodology for catalyst development has proven inefficient due to its costly and time-intensive nature. To accelerate the catalyst development process, the Gibbs free energy of hydrogen adsorption ( Δ G H ∗ ), computed using the density functional theory (DFT), is widely used as the paramount descriptor for evaluating and predicting HER catalyst performance. However, DFT calculations for Δ G H ∗ are time-consuming and thus pose a challenge for high-throughput screening. Herein, we devise a predictive model for Δ G H ∗ within transition metal-doped TMD systems using a machine learning (ML) framework. We calculate DFT Δ G H ∗ values for 150 TM-doped MX2 (CrS2, MoS2, WS2, MoSe2, and MoTe2) and apply various ML algorithms. We validate the universality of our model by constructing 15 new external test sets. The prediction results show a high correlation coefficient of R 2 = 0.92 . Based on feature analysis, the three most important parameters are the number of valence electrons of the doped transition metal, the distance of the valence electrons of the doped transition metal, and the electronegativity of the doped transition metal. Our DFT-based ML model provides a useful guideline for the material development process through Δ G H ∗ prediction and facilitates the efficient design of transition metal dichalcogenide catalysts that exhibit superior HER activity.

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Jiang, Dongting, Zhiyuan Liu, Zhe Xiao, Zhengfang Qian, Yiling Sun, Zhiyuan Zeng, and Renheng Wang. "Flexible electronics based on 2D transition metal dichalcogenides." Journal of Materials Chemistry A 10, no. 1 (2022): 89–121. http://dx.doi.org/10.1039/d1ta06741a.

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We have reviewed recently reported TMD-based flexible devices with their merits and future challenges, which may provide innovative ideas for the enhancements of both device efficiency and flexibility of the TMD-based flexible electronics.

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47

Danilyuk, Alexander L., Denis A. Podryabinkin, Victor L. Shaposhnikov, and Serghej L. Prischepa. "Charge Critical Phenomena in a Field Heterostructure with Two-Dimensional Crystal." Solids 5, no. 2 (April 6, 2024): 193–207. http://dx.doi.org/10.3390/solids5020013.

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The charge properties and regularities of mutual influence of the electro-physical parameters in a metal (M)/insulator (I)/two-dimensional crystal heterostructure were studied. In one case, the transition metal dichalcogenide (TMD) MoS2 was considered as a two-dimensional crystal, and in another the Weyl semi-metal (WSM) ZrTe5, representative of a quasi-two-dimensional crystal was chosen for this purpose. By self-consistently solving the electrostatic equations of the heterostructures under consideration and the Fermi–Dirac distribution, the relationship between such parameters as the concentration of charge carriers, chemical potential, and quantum capacitance of the TMD (WSM), as well as the capacitance of the I layer and the interface capacitance I–TMD (WSM), and their dependence on the field electrode potential, have been derived. The conditions for the emergence of charge instability and the critical phenomena caused by it are also determined.

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48

Vogl, Michael, Swati Chaudhary, and Gregory A. Fiete. "Light driven magnetic transitions in transition metal dichalcogenide heterobilayers." Journal of Physics: Condensed Matter, December 13, 2022. http://dx.doi.org/10.1088/1361-648x/acab49.

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Abstract Motivated by the recent excitement around the physics of twisted transition metal dichalcogenide (TMD) multilayer systems, we study strongly correlated phases of TMD heterobilayers under the influence of light. We consider both waveguide light and circularly polarized light. The former allows for longitudinally polarized light, which in the high frequency limit can be used to selectively modify interlayer hoppings in a tight binding model. We argue based on quasi-degenerate perturbation theory that changes to the interlayer hoppings can be captured as a modulation to the strength of the moir ́e potential in a continuum model. As a consequence, waveguide light can be used to drive transitions between a myriad of different magnetic phases, including a transition from a 120◦ Neel phase to a stripe ordered magnetic phase, or from a spin density wave phase to a paramagnetic phase, among others. When the system is subjected to circularly polarized light we find that the effective mass of the active TMD layer is modified by an applied electromagnetic field. By simultaneously applying waveguide light and circularly polarized light to a system, one has a high level of control in moving through the phase diagram in-situ. Lastly, we comment on the experimental feasibility of Floquet state preparation and argue that it is within reach of available techniques when the system is coupled to a judiciously chosen bath.

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Nassiri Nazif, Koosha, Frederick U. Nitta, Alwin Daus, Krishna C. Saraswat, and Eric Pop. "Efficiency limit of transition metal dichalcogenide solar cells." Communications Physics 6, no. 1 (December 20, 2023). http://dx.doi.org/10.1038/s42005-023-01447-y.

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AbstractUltrathin transition metal dichalcogenide (TMD) films show great promise as absorber materials in high-specific-power (i.e., high-power-per-weight) solar cells, due to their high optical absorption, desirable band gaps, and self-passivated surfaces. However, the ultimate performance limits of TMD solar cells remain unknown today. Here, we establish the efficiency limits of multilayer (≥5 nm-thick) MoS2, MoSe2, WS2, and WSe2 solar cells under AM 1.5 G illumination as a function of TMD film thickness and material quality. We use an extended version of the detailed balance method which includes Auger and defect-assisted Shockley-Read-Hall recombination mechanisms in addition to radiative losses, calculated from measured optical absorption spectra. We demonstrate that single-junction solar cells with TMD films as thin as 50 nm could in practice achieve up to 25% power conversion efficiency with the currently available material quality, making them an excellent choice for high-specific-power photovoltaics.

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50

Munkhbat, Battulga, Andrew B. Yankovich, Denis G. Baranov, Ruggero Verre, Eva Olsson, and Timur O. Shegai. "Transition metal dichalcogenide metamaterials with atomic precision." Nature Communications 11, no. 1 (September 14, 2020). http://dx.doi.org/10.1038/s41467-020-18428-2.

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Abstract The ability to extract materials just a few atoms thick has led to the discoveries of graphene, monolayer transition metal dichalcogenides (TMDs), and other important two-dimensional materials. The next step in promoting the understanding and utility of flatland physics is to study the one-dimensional edges of these two-dimensional materials as well as to control the edge-plane ratio. Edges typically exhibit properties that are unique and distinctly different from those of planes and bulk. Thus, controlling the edges would allow the design of materials with combined edge-plane-bulk characteristics and tailored properties, that is, TMD metamaterials. However, the enabling technology to explore such metamaterials with high precision has not yet been developed. Here we report a facile and controllable anisotropic wet etching method that allows scalable fabrication of TMD metamaterials with atomic precision. We show that TMDs can be etched along certain crystallographic axes, such that the obtained edges are nearly atomically sharp and exclusively zigzag-terminated. This results in hexagonal nanostructures of predefined order and complexity, including few-nanometer-thin nanoribbons and nanojunctions. Thus, this method enables future studies of a broad range of TMD metamaterials through atomically precise control of the structure.

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