Journal articles on the topic 'Transistors HEMT'
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Amar, Abdelhamid, Bouchaïb Radi, and Hami El Abdelkhalak. "Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)." Applied Sciences 11, no. 22 (November 13, 2021): 10720. http://dx.doi.org/10.3390/app112210720.
Full textMrvić, Jovan, and Vladimir Vukić. "Comparative analysis of the switching energy losses in GaN HEMT and silicon MOSFET power transistors." Zbornik radova Elektrotehnicki institut Nikola Tesla 30, no. 30 (2020): 93–109. http://dx.doi.org/10.5937/zeint30-29318.
Full textKuliev, M. V. "Influence of the Heterostructure Composition on the Long-Term Stability of a Microwave Oscillator." Nano- i Mikrosistemnaya Tehnika 24, no. 1 (February 22, 2022): 27–29. http://dx.doi.org/10.17587/nmst.24.27-29.
Full textZhelannov, Andrei V., Boris I. Seleznev, and Dmitry G. Fedorov. "Study of Characteristics of HEMT-Transistors Based on AlGaN/GaN Heterostructure." Nano Hybrids and Composites 28 (February 2020): 149–54. http://dx.doi.org/10.4028/www.scientific.net/nhc.28.149.
Full textСоловьев, А. А. "МЕТОДИКА ИЗМЕРЕНИЯ ХАРАКТЕРИСТИК И ПОСТРОЕНИЕ МОДЕЛИ СВЧ ПОЛЕВОГО ТРАНЗИСТОРА С ИСПОЛЬЗОВАНИЕМ САПР KEYSIGHT EESOF." NANOINDUSTRY Russia 96, no. 3s (June 15, 2020): 708–11. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.708.711.
Full textSleptsova, Anastasia A., Sergey V. Chernykh, Dmitry A. Podgorny, and Ilya A. Zhilnikov. "Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD." Modern Electronic Materials 6, no. 2 (July 15, 2020): 71–75. http://dx.doi.org/10.3897/j.moem.6.2.58860.
Full textSalmanogli, Ahmad. "Squeezed state generation using cryogenic InP HEMT nonlinearity." Journal of Semiconductors 44, no. 5 (May 1, 2023): 052901. http://dx.doi.org/10.1088/1674-4926/44/5/052901.
Full textRyndin, Eugeny A., Amgad A. Al-Saman, and Boris G. Konoplev. "A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics." Active and Passive Electronic Components 2019 (April 1, 2019): 1–9. http://dx.doi.org/10.1155/2019/5135637.
Full textSARKOZY, S., X. MEI, W. YOSHIDA, P. H. LIU, M. LANGE, J. LEE, Z. ZHOU, et al. "AMPLIFIER GAIN PER STAGE UP TO 0.5 THz USING 35 NM InP HEMT TRANSISTORS." International Journal of High Speed Electronics and Systems 20, no. 03 (September 2011): 399–404. http://dx.doi.org/10.1142/s0129156411006684.
Full textLi, Zijian. "Advancements in GaN HEMT structures and applications: A comprehensive overview." Journal of Physics: Conference Series 2786, no. 1 (June 1, 2024): 012003. http://dx.doi.org/10.1088/1742-6596/2786/1/012003.
Full textElwaradi, Reda, Jash Mehta, Thi Huong Ngo, Maud Nemoz, Catherine Bougerol, Farid Medjdoub, and Yvon Cordier. "Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate." Journal of Applied Physics 133, no. 14 (April 14, 2023): 145705. http://dx.doi.org/10.1063/5.0147048.
Full textWojtasiak, Wojciech, Marcin Góralczyk, Daniel Gryglewski, Marcin Zając, Robert Kucharski, Paweł Prystawko, Anna Piotrowska, et al. "AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts." Micromachines 9, no. 11 (October 25, 2018): 546. http://dx.doi.org/10.3390/mi9110546.
Full textPavlov, A. Yu, K. N. Tomosh, V. Yu Pavlov, D. N. Slapovskiy, A. V. Klekovkin, and I. A. Ivchenko. "Electron Mobility Transistors On AlGaN/GaN Heterostructure with Recess in the Barrier Layer." Nano- i Mikrosistemnaya Tehnika 24, no. 2 (February 21, 2022): 103–8. http://dx.doi.org/10.17587/nmst.24.103-108.
Full textSong, Yu-Lin, Manoj Kumar Reddy, Luh-Maan Chang, and Gene Sheu. "Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps." Micromachines 12, no. 7 (June 26, 2021): 751. http://dx.doi.org/10.3390/mi12070751.
Full textHasan, Md Sakib, Samira Shamsir, Mst Shamim Ara Shawkat, Frances Garcia, and Syed K. Islam. "Multivariate Regression Polynomial: A Versatile and Efficient Method for DC Modeling of Different Transistors (MOSFET, MESFET, HBT, HEMT and G4FET)." International Journal of High Speed Electronics and Systems 27, no. 03n04 (September 2018): 1840016. http://dx.doi.org/10.1142/s0129156418400165.
Full textĐorđević, Vladica, Zlatica Marinković, and Olivera Pronić-Rančić. "COMPARATIVE ANALYSIS OF DIFFERENT CAD METHODS FOR EXTRACTION OF THE HEMT NOISE WAVE MODEL PARAMETERS." Facta Universitatis, Series: Automatic Control and Robotics 16, no. 2 (October 24, 2017): 117. http://dx.doi.org/10.22190/fuacr1702119d.
Full textMusznicki, Piotr, Pawel B. Derkacz, and Piotr J. Chrzan. "Wideband Modeling of DC-DC Buck Converter with GaN Transistors." Energies 14, no. 15 (July 22, 2021): 4430. http://dx.doi.org/10.3390/en14154430.
Full textArseniuk, Dmytro, and Yuri Zinkovskyi. "MINIMIZING HIGH-FREQUENCY SWITCHING LOSSES IN WIDEBAND GAN HEMTS FOR FLYBACK CONVERTERS." Information and Telecommunication Sciences, no. 2 (December 21, 2023): 53–60. http://dx.doi.org/10.20535/2411-2976.22023.53-60.
Full textGryglewski, Daniel, Wojciech Wojtasiak, Eliana Kamińska, and Anna Piotrowska. "Characterization of Self-Heating Process in GaN-Based HEMTs." Electronics 9, no. 8 (August 13, 2020): 1305. http://dx.doi.org/10.3390/electronics9081305.
Full textTorina, Elena M., Victor N. Kochemasov, and Ansar R. Safin. "Transistors for Solid-State Microwave Switches (A Review)." Journal of the Russian Universities. Radioelectronics 26, no. 3 (July 6, 2023): 6–31. http://dx.doi.org/10.32603/1993-8985-2023-26-3-6-31.
Full textLi, Fan, Ang Li, Yuhao Zhu, Chengmurong Ding, Yubo Wang, Weisheng Wang, Miao Cui, Yinchao Zhao, Huiqing Wen, and Wen Liu. "Monolithic Si-Based AlGaN/GaN MIS-HEMTs Comparator and Its High Temperature Characteristics." Applied Sciences 11, no. 24 (December 17, 2021): 12057. http://dx.doi.org/10.3390/app112412057.
Full textBouneb, I., and F. Kerrour. "Nanometric Modelisation to Characterize Dynamics Carriers in a HEMT Heterostructure (AlGaAs/GaAs) Using an Effectif Doping." Key Engineering Materials 644 (May 2015): 26–30. http://dx.doi.org/10.4028/www.scientific.net/kem.644.26.
Full textLu, Hao, Ling Yang, Bin Hou, Meng Zhang, Mei Wu, Xiao-Hua Ma, and Yue Hao. "AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade." Applied Physics Letters 120, no. 17 (April 25, 2022): 173502. http://dx.doi.org/10.1063/5.0088585.
Full textLu, Hao, Ling Yang, Bin Hou, Meng Zhang, Mei Wu, Xiao-Hua Ma, and Yue Hao. "AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade." Applied Physics Letters 120, no. 17 (April 25, 2022): 173502. http://dx.doi.org/10.1063/5.0088585.
Full textAbolduev, I. M., N. V. Alkeev, V. S. Belyaev, E. V. Kaevitser, and I. D. Kashlakov. "CURRENT COLLAPSE MEASUREMENTS IN PULSED GAN TRANSISTORS." Electronic engineering Series 2 Semiconductor devices 259, no. 4 (2020): 12–18. http://dx.doi.org/10.36845/2073-8250-2020-259-4-12-18.
Full textJardel, Olivier, Jean-Claude Jacquet, Lény Baczkowski, Dominique Carisetti, Didier Lancereau, Maxime Olivier, Raphaël Aubry, et al. "InAlN/GaN HEMTs based L-band high-power packaged amplifiers." International Journal of Microwave and Wireless Technologies 6, no. 6 (February 25, 2014): 565–72. http://dx.doi.org/10.1017/s175907871400004x.
Full textJang, Kyu-Won, In-Tae Hwang, Hyun-Jung Kim, Sang-Heung Lee, Jong-Won Lim, and Hyun-Seok Kim. "Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study." Micromachines 11, no. 1 (December 31, 2019): 53. http://dx.doi.org/10.3390/mi11010053.
Full textGramatikov, Pavlin. "GALLIUM NITRIDE POWER ELECTRONICS FOR AEROSPACE - MODELLING AND SIMULATION." Journal Scientific and Applied Research 15, no. 1 (March 3, 2019): 11–21. http://dx.doi.org/10.46687/jsar.v15i1.250.
Full textQin, Zhen-Wei, Wen-Hsuan Tsai, Wei-Chia Chen, Hao-Hsuan Lo, and Yue-Ming Hsin. "I–V Characteristics of E-mode GaN-based transistors under gate floating." Semiconductor Science and Technology 37, no. 4 (February 14, 2022): 045002. http://dx.doi.org/10.1088/1361-6641/ac5105.
Full textWang, Jinye, Jun Liu, and Zhenxin Zhao. "A novel small-signal equivalent circuit model for GaN HEMTs incorporating a dual-field-plate." Journal of Semiconductors 45, no. 5 (May 1, 2024): 052302. http://dx.doi.org/10.1088/1674-4926/45/5/052302.
Full textWang, Chih Hao, Liang Yu Su, Finella Lee, and Jian Jang Huang. "Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices." Applied Mechanics and Materials 764-765 (May 2015): 486–90. http://dx.doi.org/10.4028/www.scientific.net/amm.764-765.486.
Full textMaset, Enrique, Juan Bta Ejea, Agustín Ferreres, José Luis Lizán, Jose Manuel Blanes, Esteban Sanchis-Kilders, and Ausias Garrigós. "Optimized Design of 1 MHz Intermediate Bus Converter Using GaN HEMT for Aerospace Applications." Energies 13, no. 24 (December 14, 2020): 6583. http://dx.doi.org/10.3390/en13246583.
Full textНедошивина, А. Д., И. В. Макарцев, and С. В. Оболенский. "Модель для многопараметрического анализа параметров короткоканальных транзисторов типа НЕМТ." Физика и техника полупроводников 56, no. 7 (2022): 618. http://dx.doi.org/10.21883/ftp.2022.07.52747.02.
Full textМихайлович, С. В., А. Ю. Павлов, К. Н. Томош, and Ю. В. Федоров. "Низкоэнергетическое бездефектное сухое травление барьерного слоя HEMT AlGaN/AlN/GaN." Письма в журнал технической физики 44, no. 10 (2018): 61. http://dx.doi.org/10.21883/pjtf.2018.10.46100.17227.
Full textYan, Dong, Lijun Hang, Yuanbin He, Zhen He, and Pingliang Zeng. "An Accurate Switching Transient Analytical Model for GaN HEMT under the Influence of Nonlinear Parameters." Energies 15, no. 8 (April 18, 2022): 2966. http://dx.doi.org/10.3390/en15082966.
Full textKlochkov, A. N. "InP HEMT Transistors and Monolithic Integrated Circuits: Review." Nano- i Mikrosistemnaya Tehnika 22, no. 2 (February 24, 2020): 79–97. http://dx.doi.org/10.17587/nmst.22.79-97.
Full textWang, Ding, Ping Wang, Minming He, Jiangnan Liu, Shubham Mondal, Mingtao Hu, Danhao Wang, Yuanpeng Wu, Tao Ma, and Zetian Mi. "Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT." Applied Physics Letters 122, no. 9 (February 27, 2023): 090601. http://dx.doi.org/10.1063/5.0143645.
Full textAmar, Abdelhamid, Bouchaïb Radi, and Abdelkhalak El Hami. "Optimization based on electro-thermo-mechanical modeling of the high electron mobility transistor (HEMT)." International Journal for Simulation and Multidisciplinary Design Optimization 13 (2022): 2. http://dx.doi.org/10.1051/smdo/2021035.
Full textБеляков, В. А., И. В. Макарцев, А. Г. Фефелов, С. В. Оболенский, А. П. Васильев, А. Г. Кузьменков, М. М. Кулагина, and Н. А. Малеев. "Влияние технологии двойного травления под затвор на параметры HEMT транзисторов на подложках GaAs и InP." Физика и техника полупроводников 55, no. 10 (2021): 890. http://dx.doi.org/10.21883/ftp.2021.10.51439.38.
Full textCho, Seong-Kun, and Won-Ju Cho. "High-Sensitivity pH Sensor Based on Coplanar Gate AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor." Chemosensors 9, no. 3 (February 25, 2021): 42. http://dx.doi.org/10.3390/chemosensors9030042.
Full textYang, Jie, Ye Ting Jia, Ning Ye, Zhen Yu Yuan, Hong Yuan Shen, and Jia Di. "An Improved I-V Model of GaN HEMT for High Temperature Applications." Materials Science Forum 924 (June 2018): 980–83. http://dx.doi.org/10.4028/www.scientific.net/msf.924.980.
Full textWang, Baochao, Shili Dong, Shanlin Jiang, Chun He, Jianhui Hu, Hui Ye, and Xuezhen Ding. "A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs." Energies 12, no. 6 (March 25, 2019): 1146. http://dx.doi.org/10.3390/en12061146.
Full textWeis, Gerald. "Performance Comparison Between Surface-mount and Embedded Power Modules." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (January 1, 2019): 000647–70. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_tp3_052.
Full textSun, Haifeng, Diego Marti, Stefano Tirelli, Andreas R. Alt, Hansruedi Benedickter, and C. R. Bolognesi. "Millimeter-wave GaN-based HEMT development at ETH-Zürich." International Journal of Microwave and Wireless Technologies 2, no. 1 (February 2010): 33–38. http://dx.doi.org/10.1017/s1759078710000164.
Full textSANO, EIICHI, and TAIICHI OTSUJI. "HEMT-BASED NANOMETER DEVICES TOWARD TERAHERTZ ERA." International Journal of High Speed Electronics and Systems 17, no. 03 (September 2007): 509–20. http://dx.doi.org/10.1142/s0129156407004709.
Full textMaati, Wafa, and Abdelkader Hamdoune. "Aluminium Gallium Nitride (AlGaN)/Gallium Nitride (GaN)/Boron Gallium Nitride (BGaN) High Electron Mobility Transistors (HEMT): From Normally-On to Normally-Off Transistor." Sensor Letters 18, no. 5 (May 1, 2020): 366–70. http://dx.doi.org/10.1166/sl.2020.4226.
Full textFatma M. Mahmoud. "GaN-HEMT Performance Enhancement." Journal of Electrical Systems 20, no. 2 (April 4, 2024): 1426–35. http://dx.doi.org/10.52783/jes.1442.
Full textTsai, Jung-Hui, Jing-Shiuan Niu, Xin-Yi Huang, and Wen-Chau Liu. "Comparative Investigation of AlGaN/AlN/GaN High Electron Mobility Transistors with Pd/GaN and Pd/Al2O3/GaN Gate Structures." Science of Advanced Materials 13, no. 2 (February 1, 2021): 289–93. http://dx.doi.org/10.1166/sam.2021.3856.
Full textDai, Pengfei, Shaowei Wang, and Hongliang Lu. "Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors." Micromachines 15, no. 3 (February 25, 2024): 321. http://dx.doi.org/10.3390/mi15030321.
Full textGuan, Wuxiao. "Advancements and trends in GaN HEMT." Applied and Computational Engineering 23, no. 1 (November 7, 2023): 245–51. http://dx.doi.org/10.54254/2755-2721/23/20230662.
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