Books on the topic 'Transistors HEMT'

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1

Lee, Ross R., Svensson Stefan P, and Lugli P. 1956-, eds. Pseudomorphic HEMT technology and applications. Dordrecht: Kluwer Academic, 1996.

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2

Q, Lee Richard, and United States. National Aeronautics and Space Administration., eds. Planar dielectric resonator stabilized HEMT oscillator integrated with CPW/aperture coupled patch antenna. [Washington, D.C.]: National Aeronautics and Space Administration, 1991.

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3

Freeman, Jon C. Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs). [Cleveland, Ohio]: National Aeronautics and Space Administration, Glenn Research Center, 2003.

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4

Duran, Halit C. High performance InP-based HEMTs with dry etched gate recess. Konstanz: Hartung-Gorre Verlag, 1998.

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5

Anholt, Robert. Electrical and thermal characterization of MESFETs, HEMTs, and HBTs. Boston: Artech House, 1995.

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6

Ladbrooke, Peter H. MMIC design: GaAs FETS and HEMTs. Boston: Artech House, 1989.

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7

Ju, Y. Sungtaek. Microscale Heat Conduction in Integrated Circuits and Their Constituent Films. Boston, MA: Springer US, 1999.

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8

Ju, Y. Sungtaek. Microscale heat conduction in integrated circuits and their constituent films. Boston: Kluwer Academic, 1999.

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9

Ju, Y. Sungtaek. Microscale heat conduction in integrated circuits and their constituent films. Boston: Kluwer Academic, 1999.

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10

International High Temperature Electronics Conference (4th 1998 Albuquerque, N.M.). 1998 Fourth International High Temperature Electronics Conference: HITEC, Albuquerque, New Mexico, USA, June 14-18, 1998. New York City, NY: The Institute of Electrical and Electronics Engineers, Inc., 1998.

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11

Eliason, Garth W. HEMT-compatible laser diodes. 1994.

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12

Eliason, Garth W. HEMT-compatible laser diodes. 1994.

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13

Ross, R. L., and Silvana Lombardo. Pseudomorphic HEMT Technology and Applications. Springer, 2012.

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14

Chang, Chujyh. Modeling and characterization of hemt devices. 1989.

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15

Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications. Taylor & Francis Group, 2023.

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16

Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications. CRC Press, 2021.

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17

Mohankumar, N. Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications. Taylor & Francis Group, 2021.

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18

Nirmal, D., and J. Ajayan. Handbook for III-V High Electron Mobility Transistor Technologies. Taylor & Francis Group, 2020.

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19

Nirmal, D., and J. Ajayan. Handbook for III-V High Electron Mobility Transistor Technologies. Taylor & Francis Group, 2019.

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20

Nirmal, D., and J. Ajayan. Handbook for III-V High Electron Mobility Transistor Technologies. Taylor & Francis Group, 2019.

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21

Handbook for III-V High Electron Mobility Transistor Technologies. Taylor & Francis Group, 2019.

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22

Fundamentals of III-V devices: HBTs, MESFETs, and HFETs/HEMTs. New York: Wiley, 1999.

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23

Liu, William. Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs. Wiley & Sons, Incorporated, John, 2008.

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24

Bryant, Kathleen Cooper. The analysis of a transistor cap as a heat dissipator. 1986.

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25

Chauhan, Yogesh Singh, Sheikh Aamir Ahsan, Ahtisham Ul Haq Pampori, and Raghvendra Dangi. GaN Transistor Modeling for RF and Power Electronics: Using the ASM-GaN-HEMT Model. Elsevier Science & Technology, 2023.

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26

GaN Transistor Modeling for RF and Power Electronics: Using the ASM-GaN-HEMT Model. Elsevier Science & Technology, 2023.

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27

National Aeronautics and Space Administration (NASA) Staff. Basic Equations for the Modeling of Gallium Nitride (Gan) High Electron Mobility Transistors (Hemts). Independently Published, 2018.

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28

Bergamaschi, Crispino Enrico. Herstellung, Charakterisierung und Modellierung von InAlAs/InGaAs/InP HEMT Transistoren für Anwendungen im mm-Wellenbereich. 1994.

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29

Anderson, James A. Computing Hardware. Oxford University Press, 2018. http://dx.doi.org/10.1093/acprof:oso/9780199357789.003.0003.

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Digital computers are built from hardware of great simplicity. First, they are built from devices with two states: on or off, one or zero, high voltage or low voltage, or logical TRUE or FALSE. Second, the devices are connected with extremely fine connections, currently on the order of size of a large virus. Their utility, value, and perceived extreme complexity lie in the software controlling them. Different devices have been used to build computers: relays, vacuum tubes, transistors, and integrated circuits. Theoretically, all can run the same software, only slower or faster. More exotic technologies have not proved commercially viable. Digital computer hardware has increased in power by roughly a factor of 2 every 2 years for five decades, an observation called Moore’s Law. Engineering problems with very small devices, such as quantum effects, heat, and difficulty of fabrication, are increasing and may soon end Moore’s Law.
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30

Ju, Y. Sungtaek, and Kenneth E. Goodson. Microscale Heat Conduction in Integrated Circuits and Their Constituent Films (Microsystems). Springer, 1999.

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31

Lin, Angela A. Two dimensional numerical simulation of a non-isothermal GaAs MESFET. 1992.

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32

1998 Fourth International High Temperature Electronics Conference: HITEC, Albuquerque, New Mexico, USA, June 14-18, 1998. The Institute of Electrical and Electronics Engineers, Inc, 1998.

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33

Institute Of Electrical and Electronics Engineers and International High Temperature Electronics Conference 1998 albuquerqu. High Temperature Electronics Conference, 1998 4th International. Institute of Electrical & Electronics Enginee, 1999.

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