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Journal articles on the topic 'Transistor amplifier in C class'

Author: Grafiati

Published: 28 June 2021

Last updated: 29 July 2025

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1

S, Muthukumar, and John Wiselin M.C. "Class C Power Amplifier Using GaN Hemt Transistor." Journal of Advanced Research in Dynamical and Control Systems 11, no. 0009-SPECIAL ISSUE (2019): 653–60. http://dx.doi.org/10.5373/jardcs/v11/20192618.

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Murtianta, Budihardja. "PENGUAT KELAS D DENGAN METODE SUMMING INTEGRATOR." Elektrika 11, no. 2 (2019): 12. http://dx.doi.org/10.26623/elektrika.v11i2.1693.

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A class D amplifier is one in which the output transistors are operated as switches. When a transistor is off, the current through it is zero and when it is on, the voltage across it is small, ideally zero. Thus the power dissipation is very low, so it requires a smaller heat sink for the amplifier. Class D amplifier operation is based on analog principles and there is no digital encoding of the signal. Before the emergence of class D amplifiers, the standard classes were class A, class AB, class B, and class C. The classic method for generating signals driving a transistor MOSFET is to use a

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3

Choi, Hojong. "Class-C Linearized Amplifier for Portable Ultrasound Instruments." Sensors 19, no. 4 (2019): 898. http://dx.doi.org/10.3390/s19040898.

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Transistor linearizer networks are proposed to increase the transmitted output voltage amplitudes of class-C amplifiers, thus, increasing the sensitivity of the echo signals of piezoelectric transducers, which are the main components in portable ultrasound instruments. For such instruments, class-C amplifiers could be among the most efficient amplifier schemes because, compared with a linear amplifier such as a class-A amplifier, they could critically reduce direct current (DC) power consumption, thus, increasing the battery life of the instruments. However, the reduced output voltage amplitud

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Choi, Hojong. "Class-C Pulsed Power Amplifier with Voltage Divider Integrated with High-Voltage Transistor and Switching Diodes for Handheld Ultrasound Instruments." Energies 15, no. 21 (2022): 7836. http://dx.doi.org/10.3390/en15217836.

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A novel Class-C pulsed power amplifier with a voltage divider integrated with a high-voltage transistor and switching diodes is proposed to reduce DC power consumption and increase the maximum output power for handheld ultrasound instruments. Ultrasonic transducers in ultrasound instruments are devices that convert electrical power into acoustic power or vice versa, which are triggered by power amplifiers. Efficient power conversion is also very important to avoid thermal issues in handheld ultrasound instruments owing to limited battery power and excessive heat generation caused by the enclos

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5

Petrzela, Jiri. "Generalized Single Stage Class C Amplifier: Analysis from the Viewpoint of Chaotic Behavior." Applied Sciences 10, no. 15 (2020): 5025. http://dx.doi.org/10.3390/app10155025.

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This paper briefly describes a recent discovery that occurred during the study of the simplest mathematical model of a class C amplifier with a bipolar transistor. It is proved both numerically and experimentally that chaos can be observed in this simple network structure under three conditions: (1) the transistor is considered non-unilateral, (2) bias point provides cubic polynomial feedforward and feedback transconductance, and (3) the LC tank has very high resonant frequency. Moreover, chaos is generated by an autonomous class C amplifier; i.e., an isolated system without a driving force is

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Petrzela, Jiri. "New Chaotic Oscillator Derived from Class C Single Transistor-Based Amplifier." Mathematical Problems in Engineering 2020 (November 11, 2020): 1–18. http://dx.doi.org/10.1155/2020/2640629.

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This paper describes a new autonomous deterministic chaotic dynamical system having a single unstable saddle-spiral fixed point. A mathematical model originates in the fundamental structure of the class C amplifier. Evolution of robust strange attractors is conditioned by a bilateral nature of bipolar transistor with local polynomial or piecewise linear feedforward transconductance and high frequency of operation. Numerical analysis is supported by experimental verification and both results prove that chaos is neither a numerical artifact nor a long transient behaviour. Also, good accordance b

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7

Choi, Hojong. "Development of a Class-C Power Amplifier with Diode Expander Architecture for Point-of-Care Ultrasound Systems." Micromachines 10, no. 10 (2019): 697. http://dx.doi.org/10.3390/mi10100697.

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Point-of-care ultrasound systems are widely used in ambulances and emergency rooms. However, the excessive heat generated from ultrasound transmitters has an impact on the implementation of piezoelectric transducer elements and on battery consumption, thereby affecting the system’s sensitivity and resolution. Non-linear power amplifiers, such as class-C amplifiers, could substitute linear power amplifiers, such as class-A amplifiers, which are currently used in point-of-care ultrasound systems. However, class-C power amplifiers generate less output power, resulting in a reduction of system sen

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Petrzela, Jiri. "Evidence of Strange Attractors in Class C Amplifier with Single Bipolar Transistor: Polynomial and Piecewise-Linear Case." Entropy 23, no. 2 (2021): 175. http://dx.doi.org/10.3390/e23020175.

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This paper presents and briefly discusses recent observations of dynamics associated with isolated generalized bipolar transistor cells. A mathematical model of this simple system is considered on the highest level of abstraction such that it comprises many different network topologies. The key property of the analyzed structure is its bias point since the transistor is modeled via two-port admittance parameters. A necessary but not sufficient condition for the evolution of autonomous complex behavior is the nonlinear bilateral nature of the transistor with arbitrary reason that causes this ef

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Modzelewski, Juliusz, та Katarzyna Kulma. "An improved calculation method of inductance and capacitances in π1 circuits for resonant power amplifiers". Archives of Electrical Engineering 61, № 2 (2012): 221–37. http://dx.doi.org/10.2478/v10171-012-0019-x.

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An improved calculation method of inductance and capacitances in π1 circuits for resonant power amplifiers In the paper an improved method of calculation of the inductance and capacitances in the π1 circuit for Class A, AB, B, and C resonant power amplifiers is presented. This method is based on an assumption that the quality factor of the inductor is finite and the capacitors are lossless. The input parameters for calculations are the amplifier load resistance, the transistor load resistance, the quality factor of the inductor, the loaded quality factor of the designed circuit, and the operat

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10

Montesinos, Ronald, Corinne Berland, Mazen Abi Hussein, Olivier Venard, and Philippe Descamps. "Analysis of RF power amplifiers in LINC systems." International Journal of Microwave and Wireless Technologies 4, no. 1 (2012): 81–91. http://dx.doi.org/10.1017/s1759078711001085.

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LInear amplification using Non-linear Components (LINC) is an architecture that achieves linear power amplification for radio-frequency (RF) transmitters. This paper describes the impact of RF power amplifiers (PAs) class on the overall system performances. The linearity and efficiency of the LINC transmitter with different PA classes (AB, B, C, D, E, F, F−1, and J) are evaluated and compared, in terms of error vector magnitude (EVM), adjacent channel leakage ratio (ACLR), and power added efficiency (PAE), for a 16QAM modulation having 5.6 dB peak to average power ratio. Simulations are perfor

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11

Abdulaziz, Abdulrazaq, A. A. Adamu, A. S. Yaro, F. A. Jibrin, S. Babani, and M. H. Dankulu. "BANDWIDTH ENHANCEMENT IN DOHERTY POWER AMPLIFIERS: A COMPARISON OF CONVENTIONAL AND INVERTED ARCHITECTURES." FUDMA JOURNAL OF SCIENCES 9, no. 3 (2025): 55–65. https://doi.org/10.33003/fjs-2025-0903-3255.

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Conventional Doherty power amplifiers (DPAs) face bandwidth issues due to poor impedance matching and input phase design. This paper explores ways to enhance DPA performance in frequency response. The study focuses on optimizing output matching network parameters and the input phase slope between main and auxiliary amplifiers to improve bandwidth efficiency, especially for mobile wireless applications.We calculate the voltage standing wave ratio (VSWR) for each DPA amplification stage at different power levels using MATLAB. We examine conventional and inverted DPA configurations at 2.5 GHz wit

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Díez-Acereda, Victoria, Sunil Lalchand Khemchandani, Javier del Pino, and Ayoze Diaz-Carballo. "A Comparative Analysis of Doherty and Outphasing MMIC GaN Power Amplifiers for 5G Applications." Micromachines 14, no. 6 (2023): 1205. http://dx.doi.org/10.3390/mi14061205.

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A comparison between a fully integrated Doherty power amplifier (DPA) and outphasing power amplifier (OPA) for fifth Generation (5G) wireless communications is presented in this paper. Both amplifiers are integrated using pHEMT transistors from the OMMIC’s 100 nm GaN-on-Si technology (D01GH). After a theoretical analysis, the design and layout of both circuits are presented. The DPA uses an asymmetric configuration where the main amplifier is biased in class AB and the auxiliary amplifier is biased in class C, while the OPA uses two amplifiers biased in class B. In the comparative analysis, it

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13

WANG, YEN-CHU. "Invited paper. Comparisons of MESFET bipolar transistor and static induction transistor class C amplifiers." International Journal of Electronics 59, no. 1 (1985): 1–17. http://dx.doi.org/10.1080/00207218508920674.

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14

Azam, Sher, C. Svensson, and Q. Wahab. "Pulse input Class-C power amplifier response of SiC MESFET using physical transistor structure in TCAD." Solid-State Electronics 52, no. 5 (2008): 740–44. http://dx.doi.org/10.1016/j.sse.2007.09.022.

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15

Petrzela, Jiri. "Hyperchaotic Self-Oscillations of Two-Stage Class C Amplifier With Generalized Transistors." IEEE Access 9 (2021): 62182–94. http://dx.doi.org/10.1109/access.2021.3074367.

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16

Yang, Fei, Jun Li, Hongxi Yu, et al. "Asymmetric Doherty Power Amplifier with Input Phase/Power Adjustment and Envelope Tracking." Electronics 10, no. 19 (2021): 2327. http://dx.doi.org/10.3390/electronics10192327.

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In this paper, the design and implementation of a Doherty power amplifier (DPA) are proposed using gallium nitride high electron mobility transistors (GaN HEMTs). Class-F and Class-C modes are combined to obtain an asymmetric DPA. The precise active load-pull controlling of fundamental and harmonic terminations of the DPA is simulated and analyzed, including the parasitics of the transistors. The measurements of the DPA with the phase difference, input power ratio adjustment, and envelope tracking of the auxiliary PA are discussed in detail in order to achieve a competitive performance. A grea

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17

Petrzela, Jiri, and Miroslav Rujzl. "Chaotic Oscillations in Cascoded and Darlington-Type Amplifier Having Generalized Transistors." Mathematics 10, no. 3 (2022): 532. http://dx.doi.org/10.3390/math10030532.

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This paper describes, based on both numerical and experimental bases, the evolution of chaotic and, in some cases, hyperchaotic attractors within mathematical models of two two-port analog functional blocks commonly used inside radio-frequency systems. The first investigated electronic circuit is known as the cascoded class C amplifier and the second network represents a resonant amplifier with Darlington’s active part. For the analysis of each mentioned block, fundamental configurations that contain coupled generalized bipolar transistors are considered; without driving force or interactions

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18

Konstantinov, Andrey O., J. O. Svedberg, I. C. Ray, Chris I. Harris, Christer Hallin, and B. O. Larsson. "High Power High Efficiency Lateral Epitaxy MESFETs in Silicon Carbide." Materials Science Forum 527-529 (October 2006): 1231–34. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1231.

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High power high efficiency silicon carbide RF MESFETs are fabricated using a novel structure utilizing lateral epitaxy. The MESFET employs buried p-type depletion stoppers grown by lateral epitaxy with subsequent planarization. The depletion stopper is epitaxially overgrown by the channel layer. The depletion stopper suppresses short channel effects and increases the operation voltage and the RF signal gain at high voltage operation. High breakdown voltages of over 200 Volts are achieved for single-cell components, however large-area transistors are limited to around 150 Volts. Single-cell com

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19

Jefferies, D. J., G. G. Johnstone, and J. H. B. Deane. "An experimental search for the conditions for the existence of chaotic states in Class C bipolar transistor RF amplifiers." International Journal of Electronics 71, no. 4 (1991): 661–73. http://dx.doi.org/10.1080/00207219108925509.

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20

Minnebaev, Vadim M. "Thermal and mechanical degradation mechanisms in heterostructural field-effect transistors based on gallium nitride." Russian Technological Journal 13, no. 2 (2025): 57–73. https://doi.org/10.32362/2500-316x-2025-13-2-57-73.

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Objectives. Gallium nitride heterostructural field-effect transistors (GaN HFET) are among the most promising semiconductor devices for power and microwave electronics. Over the past 10–15 years, GaN HFETs have firmly established their position in radio-electronic equipment for transmitting, receiving, and processing information, as well as in power electronics products, due to their significant advantages in terms of energy and thermal parameters. At the same time, issues associated with ensuring their reliability are no less acute than for devices based on other semiconductor materials. The

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21

Siri, Mattison S., and David S. Cochran. "Development of a Design Procedure for Class E Amplifiers." MATEC Web of Conferences 223 (2018): 01016. http://dx.doi.org/10.1051/matecconf/201822301016.

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Here, the step-by-step design procedure for a Class E amplifier is presented. An existing Class E amplifier system is described using a systems architecture approach. The design decomposition for the case study is written so that Physical Solutions (PSs; equivalent to Design Parameters) are in terms of component parameters (such as frequency or capacitance). Coupling issues are found to arise given constraints on transistor use. The design decomposition is altered to reflect the case where an amplifier is required to power a specific load. A discussion of transistor failure enables a design pr

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22

Sapawi, Rohana. "Review of Efficiency CMOS Class AB Power Amplifier Topology in Gigahertz Frequencies." ASM Science Journal 17 (May 17, 2022): 1–11. http://dx.doi.org/10.32802/asmscj.2022.1224.

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This paper reviewed the efficiency of CMOS class AB power amplifier topology especially in gigahertz frequencies. CMOS class AB power amplifier is a compromise between class A and class B in terms of linearity and efficiency between 50% to 78.5%. However, CMOS class AB power amplifier cannot have good linearity and efficiency simultaneously due to the breakdown in gate-oxide voltage and effects from hot carrier. The breakdown of oxide prevents optimum drain signal and the effect from hot carrier will reduce the quality of the overall PA design. Several works from year 1999 to 2019 with differe

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23

Modzelewski, Juliusz, and Mirosław Mikołajewski. "High-Frequency Power Amplitude Modulators with Class-E Tuned Amplifiers." Journal of Telecommunications and Information Technology, no. 4 (June 26, 2023): 79–86. http://dx.doi.org/10.26636/jtit.2008.4.903.

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A high-frequency power amplifier used in a drain amplitude modulator must have linear dependence of output HF voltage Vo versus its supply voltage VDD. This condition essential for obtaining low-level envelope distortions is met by a theoretical class-E amplifier with a linear shunt capacitance of the switch. In this paper the influence of non-linear output capacitance of the transistor in the class-E amplifier on its Vo(VDD) characteristic is analyzed using PSPICE simulations of the amplifiers operating at frequencies 0.5 MHz, 5 MHz and 7 MHz. These simulations have proven that distortions of

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Choi, Hojong. "Stacked Transistor Bias Circuit of Class-B Amplifier for Portable Ultrasound Systems." Sensors 19, no. 23 (2019): 5252. http://dx.doi.org/10.3390/s19235252.

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The performance of portable ultrasound systems is affected by the excessive heat generated by amplifiers, thereby reducing the sensitivity and resolution of the transducer devices used in ultrasound systems. Therefore, the amplifier needs to generate low amounts of heat to stabilize portable ultrasound systems. To properly control the amplifier, the related bias circuit must provide proper DC bias voltages for long time periods in ultrasound systems. To this end, a stacked transistor bias circuit was proposed to achieve a relatively constant amplifier performance irrespective of temperature va

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25

Santoso, Budi, and Zainal Abidin. "KARAKTERISTIK AMPLIFIER CLASS D MENGGUNAKAN FIELD EFFECT TRANSISTOR (FET) TYPE IRF9530 DAN IRF630." Jurnal Teknika 12, no. 2 (2020): 71. http://dx.doi.org/10.30736/jt.v13i2.470.

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In the development of power amplifiers, MOSFETs are widely used in the composition of the manufacture. As is known, MOSFETs have a longer on-off time loss compared to IGBT. The loss on the on-off time has an impact on the heat generated by the MOSFET. Class D Audio Amplifier is basically a Switching-Amplifier or Pulse Width Modulation-Amplifier. High efficiency means that it will produce low power dissipation, thus the power wasted is relatively lower when compared to class A, B or AB amplifiers. Because the class D audio amplifier can be said to be more economical because it does not require

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Vuong, Dat, Tran The Son, Anh Phan Thi Lan, Hien Dang Quang, and Trang Nguyen. "Analysis and design of class-E power amplifier considering MOSFET nonlinear capacitance." International Journal of Power Electronics and Drive Systems (IJPEDS) 13, no. 1 (2022): 23. http://dx.doi.org/10.11591/ijpeds.v13.i1.pp23-29.

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Class-E power amplifiers are integrated into many applications because their simple design and high performance. The efficiency of the power amplifier is significantly impacted by the nonlinear characteristic of the switching device, which is not analyzed clearly in theory. The nonlinear drain-to-source parasitic capacitance of the power transistor and the linear external capacitance are both contributed to the optimum conditions for obtaining the exact shunt capacitance. In this paper, a high-efficiency class-E power amplifier with shunt capacitance is designed with the consideration of both

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Dat, Vuong, The Son Tran, Phan Thi Lan Anh, Dang Quang Hien, and Nguyen Trang. "Analysis and design of class-E power amplifier considering MOSFET nonlinear capacitance." International Journal of Power Electronics and Drive Systems (IJPEDS) 13, no. 1 (2022): 23–29. https://doi.org/10.11591/ijpeds.v13.i1.pp23-29.

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Class-E power amplifiers are integrated into many applications because their simple design and high performance. The efficiency of the power amplifier is significantly impacted by the nonlinear characteristic of the switching device, which is not analyzed clearly in theory. The nonlinear drain-to-source parasitic capacitance of the power transistor and the linear external capacitance are both contributed to the optimum conditions for obtaining the exact shunt capacitance. In this paper, a high-efficiency class-E power amplifier with shunt capacitance is designed with the consideration of both

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Wongtanarak, Charinrat, and Suramate Chalermwisutkul. "Addition of an ECTI 2011 Conference Paper: “Design and Implementation of a 1 GHz Ga HEMT Class-F Power Amplifier for Transistor Model Evaluation”." ECTI Transactions on Electrical Engineering, Electronics, and Communications 10, no. 1 (2019): 138. http://dx.doi.org/10.37936/ecti-eec.2012101.170487.

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Elkhaldi, Said, Moustapha El Bakkali, Naima Amar Touhami, Taj-eddin Elhamadi, and Hmamou Abdelmounim. "Linearization, EM Simulation, and Realization of a 40 DBM Class-AB Gan Power Amplifier." International Journal of Electrical and Electronics Research 12, no. 4 (2024): 1418–26. https://doi.org/10.37391/ijeer.120436.

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This research article presents the comprehensive design and analysis of a 2.45 GHz RF power amplifier operating at 40 dBm using GaN technology. The amplifier is built around the CGH40010F transistor and employs a Linearization with Nonlinear Components Method (LINC) for enhanced linearity. The study outlines the design methodology, including the selection of the CGH40010F transistor and the application of the LINC technique. It investigates the amplifier's performance characteristics, including power output, linearity, and efficiency at the 2.45 GHz frequency. The findings reveal a robust Clas

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Akwuruoha, Charles Nwakanma. "31W Linear broadband 3.4 to 4.4 GHZ high power class-j GaN HEMT amplifier." LAUTECH Journal of Engineering and Technology 18, no. 4 (2024): 41–46. https://doi.org/10.36108/laujet/4202.81.0450.

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The recent upsurge in wireless communication systems requiring high-power transmitters for numerous applications such as electronic warfare (EW), RADAR, Satellite and optical communications has further underscored the importance of linear broadband high-power Class-J power amplifiers. This paper proposes a 31W linear broadband 3.4 to 4.4 GHz high-power Class-J GaN HEMT(gallium nitride high electron mobility transistor)amplifier. The power amplifier was designed based on Cree's commercially available 10WGaN HEMT power transistor device (CGHV40010F) using Keysight Advanced Design System (ADS) so

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Yusop, Yusmarnita, Mohd Shakir Md Saat, Siti Huzaimah Husin, Sing Kiong Nguang, and Imran Hindustan. "Design and Analysis of 1MHz Class-E Power Amplifier for Load and Duty Cycle Variations." International Journal of Power Electronics and Drive Systems (IJPEDS) 7, no. 2 (2016): 358. http://dx.doi.org/10.11591/ijpeds.v7.i2.pp358-368.

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<p>This paper presents the simulation and experimental of Class-E power amplifier which consists of a load network and a single transistor. The transistor is operated as a switch at the carrier frequency of the output signal. In general, Class-E power amplifier is often used in designing a high frequency ac power source because of its ability to satisfy the zero voltage switching (ZVS) conditions efficiently even when working at high frequencies with significant reduction in switching losses. In this paper, a 10W Class-E power amplifier is designed, constructed, and tested in the laborat

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32

Pirasteh, Ali, Saeed Roshani, and Sobhan Roshani. "Design of a Miniaturized Class F Power Amplifier Using Capacitor Loaded Transmission Lines." Frequenz 74, no. 3-4 (2020): 145–52. http://dx.doi.org/10.1515/freq-2019-0180.

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AbstractIn this paper, a new method to decrease the dimensions of the microstrip structures and reducing the overall size of the class F amplifiers is presented. First, by using the PHEMT transistor with a conventional harmonic control circuit (HCC), a low-voltage class F amplifier in the L band frequency at the operating frequency of 1.75 GHz is introduced, which named primitive class F power amplifier. Then, this amplifier is optimized by using capacitor loaded transmission lines (CLTLs). The measurement results of the amplifier show that by using the CLTL structure, the overall size has bee

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Yang, Jie, John Fraley, Bryon Western, Marcelo Schupbach, and Alexander B. Lostetter. "A 450°C High Voltage Gain AC Coupled Differential Amplifier." Materials Science Forum 717-720 (May 2012): 1253–56. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1253.

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APEI, Inc. designed, fabricated and tested a high gain AC coupled differential amplifier based on a custom-built silicon carbide (SiC) vertical junction field effect transistor (VJFET). This SiC differential amplifier is capable of high temperature operation up to 450 °C, at which a high differential voltage gain of more than 47 dB is maintained. This high gain AC coupled differential amplifier can be integrated with harsh environment sensors that deliver weak AC output signals to improve signal quality and noise immunity.

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Schmid, Ulf, Rolf Reber, Sébastien Chartier, et al. "GaN devices for communication applications: evolution of amplifier architectures." International Journal of Microwave and Wireless Technologies 2, no. 1 (2010): 85–93. http://dx.doi.org/10.1017/s1759078710000218.

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This paper presents the design and implementation of power amplifiers using high-power gallium nitride (GaN) high electronic mobility transistor (HEMT) powerbars and monolithic microwave integrated circuits (MMICs). The first amplifier is a class AB implementation for worldwide interoperability for microwave access (WiMAX) applications with emphasis on a low temperature cofired ceramics (LTCC) packaging solution. The second amplifier is a class S power amplifier using a high power GaN HEMT MMIC. For a 450 MHz continuous wave (CW) signal, the measured output power is 5.8 W and drain efficiency

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Sung, Ha-Wuk, Seong-Hee Han, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim, and Dong-Wook Kim. "C-Band GaN Dual-Feedback Low-Noise Amplifier MMIC with High-Input Power Robustness." Journal of Electromagnetic Engineering and Science 22, no. 6 (2022): 678–85. http://dx.doi.org/10.26866/jees.2022.6.r.137.

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In this paper, using the 0.2 μm ETRI GaN HEMT process, we developed a C-band GaN dual-feedback low-noise amplifier MMIC for an RF receiver module that requires high-input power robustness. By applying a feedback microstrip line at the source of the transistor and series resistor-capacitor (RC) feedback between the gate and the drain of the transistor, we obtained stable amplifier operation and a compromised impedance trace for both input impedance matching and noise matching while suppressing performance degradation of the maximum available gain and minimum noise figure. The developed low-nois

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Eccleston, K. W., K. J. I. Smith, and P. T. Gough. "A compact class-F/class-C Doherty amplifier." Microwave and Optical Technology Letters 53, no. 7 (2011): 1606–10. http://dx.doi.org/10.1002/mop.26035.

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Mbonane, Sandile H., and Viranjay M. Srivastava. "Comparative Parametric Analysis of Class-B Power Amplifier Using BJT, Single-Gate MOSFET, and Double-Gate MOSFET." Materials Science Forum 1053 (February 17, 2022): 137–42. http://dx.doi.org/10.4028/p-57edxh.

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This paper presents system performance indices for a class-B power amplifier using Double-Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It also presents a comparative analysis of three power amplifiers using different switching devices, i.e. Bipolar Junction Transistor (BJT), MOSFET, and DG MOSFET. The MOSFET used in this research work is based on Silicon for n-MOSFET and SiO2 has been used as oxide layer. These power amplifiers are also being designed and simulated to test the speed and time (taken for each of these power amplifiers) to get the output signal when an in

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Sabaghi, Masoud, Seyed Reza Hadianamrei, Mehdi Rahnama, and Maziyar Niyakan Lahiji. "Using LDMOS Transistor in Class-F Power Amplifier For WCDMA Applications." International Journal of Communications, Network and System Sciences 04, no. 10 (2011): 662–66. http://dx.doi.org/10.4236/ijcns.2011.410081.

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Neudeck, Philip G., David J. Spry, Liang Yu Chen, et al. "SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 °C." Materials Science Forum 556-557 (September 2007): 831–34. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.831.

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While there have been numerous reports of short-term transistor operation at 500 °C or above, these devices have previously not demonstrated sufficient long-term operational durability at 500 °C to be considered viable for most envisioned applications. This paper reports the development of SiC field effect transistors capable of long-term electrical operation at 500 °C. A 6H-SiC MESFET was packaged and subjected to continuous electrical operation while residing in a 500 °C oven in oxidizing air atmosphere for over 2400 hours. The transistor gain, saturation current (IDSS), and on-resistance (R

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Yang, Jie, John Fraley, Bryon Western, Marcelo Schupbach, and Alexander B. Lostetter. "An All Silicon Carbide High Temperature (450+ °C) High Voltage Gain AC Coupled Differential Amplifier." Materials Science Forum 679-680 (March 2011): 746–49. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.746.

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APEI, Inc. designed, fabricated and tested a high gain AC coupled differential amplifier based on a custom-built silicon carbide (SiC) vertical junction field effect transistor (VJFET). This SiC differential amplifier is capable of extreme temperature operation up to 450 °C, at which a high differential voltage gain of more than 47 dB is maintained. This high gain AC coupled differential amplifier can be integrated with high temperature sensors that deliver weak AC output signals to improve signal quality and noise immunity.

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Na, Jongyun, Sang-Hwa Yi, Jaekyung Shin, et al. "2.4 GHz GaN HEMT Class-F Synchronous Rectifier Using an Independent Second Harmonic Tuning Circuit." Sensors 21, no. 5 (2021): 1608. http://dx.doi.org/10.3390/s21051608.

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This paper proposes a class-F synchronous rectifier using an independent second harmonic tuning circuit for the power receiver of 2.4 GHz wireless power transmission systems. The synchronous rectifier can be designed by inverting the RF output port to the RF input port of the pre-designed class-F power amplifier based on time reversal duality. The design of the class-F power amplifier deploys an independent second harmonic tuning circuit in the matching networks to individually optimize the impedances of the fundamental and the second harmonic. The synchronous rectifier at the 2.4 GHz frequenc

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Mabrok, Mussa, Zahriladha Zakaria, Tole Sutikno, and Ammar Alhegazi. "Wideband power amplifier based on Wilkinson power divider for s-band satellite communications." Bulletin of Electrical Engineering and Informatics 8, no. 4 (2019): 1531–36. http://dx.doi.org/10.11591/eei.v8i4.1552.

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This paper presents design and simulation of wideband power amplifier based on multi-section Wilkinson power divider. Class-A topology and ATF-511P8 transistor have been used. Advanced Design System (ADS) software used to simulate the designed power amplifier. The simulation results show an input return loss (S11)-10dB, gain (S21)10 dB over the entire bandwidth, and an output power around 28dBm at the Centre frequency of 3GHz. The designed amplifier is stable over the entire bandwidth (K1). Inter-modulation distortion is -65.187dBc which is less than -50dBc. The designed amplifier can be used

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Akila, I. S., B. Anitha, N. M. Indhumeena, and D. NithiyaShri. "Design of Class F Power Amplifier for Sub 6 GHz." March 2023 5, no. 1 (2023): 15–34. http://dx.doi.org/10.36548/jei.2023.1.002.

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Class F power amplifiers increasingly have widespread use cases in the modern portable mobile communications and higher efficiency operation due to base station. This paper focuses on the design of sub 6 GHz class-F Power Amplifiers (PA) to ensure maximum output power and gain using Gallium nitride– High Electron Mobility Transistor (GaN HEMT). The work also aims to analyze stability and Power Added Efficiency (PAE) using Advanced Design System (ADS) software. Simulations for DC characteristics of the GaN HEMT transistor are performed, stability circles are simulated, and stability factor valu

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Mussa, Mabrok, Zakaria Zahriladha, Sutikno Tole, and Alhegazi Ammar. "Wideband power amplifier based on Wilkinson power divider for s-band satellite communications." Bulletin of Electrical Engineering and Informatics 8, no. 4 (2019): 1531–36. https://doi.org/10.11591/eei.v8i4.1552.

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Abstract:

This paper presents design and simulation of wideband power amplifier based on multi-section Wilkinson power divider. Class-A topology and ATF-511P8 transistor have been used. Advanced Design System (ADS) software used to simulate the designed power amplifier. The simulation results show an input return loss (S11)<-10dB, gain (S21)>10 dB over the entire bandwidth, and an output power around 28dBm at the Centre frequency of 3GHz. The designed amplifier is stable over the entire bandwidth (K>1). Inter-modulation distortion is -65.187dBc which is less than -50dBc. The designed amplifier

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Wen, Feng, and Rui Li. "Parameter Analysis and Optimization of Class-E Power Amplifier Used in Wireless Power Transfer System." Energies 12, no. 17 (2019): 3240. http://dx.doi.org/10.3390/en12173240.

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In this paper, a steady-state matrix analysis method is introduced to analyze the output characteristics of the class-E power amplifier used in a wireless power transfer (WPT) system, which takes the inductance resistance, on-resistance and leakage current of metal-oxide-semiconductor field effect transistor (MOSFET) into account so that the results can be closer to the actual value. On this basis, the parameters of the class-E power amplifier are optimized, and the output power is improved under the premise of keeping the efficiency unchanged. Finally, the output characteristics of the amplif

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Mei, Shangming, Yihua Hu, Hui Xu, and Huiqing Wen. "The Class D Audio Power Amplifier: A Review." Electronics 11, no. 19 (2022): 3244. http://dx.doi.org/10.3390/electronics11193244.

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Class D power amplifiers, one of the most critical devices for application in sound systems, face severe challenges due to the increasing requirement of smartphones, digital television, digital sound, and other terminals. The audio power amplifier has developed from a transistor amplifier to a field-effect tube amplifier, and digital amplifiers have made significant progress in circuit technology, components, and ideological understanding. The stumbling blocks for a successful power amplifier are low power efficiency and a high distortion rate. Therefore, Class D audio amplifiers are becoming

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Abdulhamid, Mohanad, and James Karugu. "On the design of class-J microwave power amplifier." International Review of Applied Sciences and Engineering 10, no. 3 (2019): 225–32. http://dx.doi.org/10.1556/1848.2019.0026.

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Due to the ISM band being unlicensed for communication applications, a lot of applications have been developed in this band and a good example is WiFi IEEE 802.11a, b, g, n of Bluetooth. This numeracy of applications motivated this paper. The paper is concerned with the design of a low distortion 20 dBm 2.4 GHz class-J power amplifier (PA) since PAs are indispensable in radio communications. The design is based on the AVAGO ATF-52189 transistor with a transition frequency of 6 GHz. The design is done as a hybrid circuit network realized using microstrip elements and surface mount device (SMD)

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Abdulhamid, Mohanad, Karugu James, and Muaayed Farhan. "On the Design of Class-J Microwave Power Amplifier." Scientific Bulletin of Electrical Engineering Faculty 19, no. 1 (2019): 6–12. http://dx.doi.org/10.1515/sbeef-2019-0002.

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AbstractDue to the ISM band being unlicensed for communication applications, a lot of applications have been developed in this band and a good example is WiFi IEEE802.11a, b, g, n of Bluetooth. This numeracy of applications motivated this paper. The paper is concerned with the design of a low distortion 20dBm 2.4GHz class-J power amplifier (PA) since PAs are indispensable in radio communications. The design is based on the AVAGO ATF-52189 transistor with a transition frequency of 6GHz. The design is done as a hybrid circuit network realized using microstrip elements and surface mount device (S

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Raicevic, Andjelija. "Amplitude modulator in class e with the current mirror in emitter circuits of the switching transistor." Facta universitatis - series: Electronics and Energetics 21, no. 2 (2008): 243–49. http://dx.doi.org/10.2298/fuee0802243r.

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Starting from the fact that the amplitude of the basic harmonics of the current, flowing through load resistor of the class E power amplifier, is proportional to direct current flowing through the collector battery of the switching transistor, an introduction of a current mirror in emitter circuit of the transistor in whose reference branch is situated a generator of modulating voltage is proposed. It can be easily proven that the total current of this mirror, which is also the direct current of the collector battery, has the waveform of the amplitude modulated signal. This amplitude modulator

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Song, Ki-Jae, Jong-Chul Lee, Byungje Lee, Jong-Heon Kim, and Nam-Young Kim. "High-efficiency class-C power-amplifier module." Microwave and Optical Technology Letters 40, no. 2 (2003): 164–67. http://dx.doi.org/10.1002/mop.11317.

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