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Journal articles on the topic 'Topological insulator layer'

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Author: Grafiati
Published: 10 December 2022
Last updated: 28 January 2023

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1

Darabi, Amir, Manuel Collet, and Michael J. Leamy. "Experimental realization of a reconfigurable electroacoustic topological insulator." Proceedings of the National Academy of Sciences 117, no. 28 (June 29, 2020): 16138–42. http://dx.doi.org/10.1073/pnas.1920549117.

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A substantial challenge in guiding elastic waves is the presence of reflection and scattering at sharp edges, defects, and disorder. Recently, mechanical topological insulators have sought to overcome this challenge by supporting back-scattering resistant wave transmission. In this paper, we propose and experimentally demonstrate a reconfigurable electroacoustic topological insulator exhibiting an analog to the quantum valley Hall effect (QVHE). Using programmable switches, this phononic structure allows for rapid reconfiguration of domain walls and thus the ability to control back-scattering resistant wave propagation along dynamic interfaces for phonons lying in static and finite-frequency regimes. Accordingly, a graphene-like polyactic acid (PLA) layer serves as the host medium, equipped with periodically arranged and bonded piezoelectric (PZT) patches, resulting in two Dirac cones at theKpoints. The PZT patches are then connected to negative capacitance external circuits to break inversion symmetry and create nontrivial topologically protected bandgaps. As such, topologically protected interface waves are demonstrated numerically and validated experimentally for different predefined trajectories over a broad frequency range.
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2

Deng, Yujun, Yijun Yu, Meng Zhu Shi, Zhongxun Guo, Zihan Xu, Jing Wang, Xian Hui Chen, and Yuanbo Zhang. "Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi2Te4." Science 367, no. 6480 (January 23, 2020): 895–900. http://dx.doi.org/10.1126/science.aax8156.

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In a magnetic topological insulator, nontrivial band topology combines with magnetic order to produce exotic states of matter, such as quantum anomalous Hall (QAH) insulators and axion insulators. In this work, we probe quantum transport in MnBi2Te4 thin flakes—a topological insulator with intrinsic magnetic order. In this layered van der Waals crystal, the ferromagnetic layers couple antiparallel to each other; atomically thin MnBi2Te4, however, becomes ferromagnetic when the sample has an odd number of septuple layers. We observe a zero-field QAH effect in a five–septuple-layer specimen at 1.4 kelvin, and an external magnetic field further raises the quantization temperature to 6.5 kelvin by aligning all layers ferromagnetically. The results establish MnBi2Te4 as an ideal arena for further exploring various topological phenomena with a spontaneously broken time-reversal symmetry.
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3

Lei, Chao, Shu Chen, and Allan H. MacDonald. "Magnetized topological insulator multilayers." Proceedings of the National Academy of Sciences 117, no. 44 (October 19, 2020): 27224–30. http://dx.doi.org/10.1073/pnas.2014004117.

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We discuss the magnetic and topological properties of bulk crystals and quasi–two-dimensional (quasi-2D) thin films formed by stacking intrinsic magnetized topological insulator (for example, Mn (SbxBi1−x)2X4with X = Se,Te) septuple layers and topological insulator quintuple layers in arbitrary order. Our analysis makes use of a simplified model that retains only Dirac cone degrees of freedom on both surfaces of each septuple or quintuple layer. We demonstrate the model’s applicability and estimate its parameters by comparing with ab initio density-functional theory (DFT) calculations. We then employ the coupled Dirac cone model to provide an explanation for the dependence of thin-film properties, particularly the presence or absence of the quantum anomalous Hall effect, on film thickness, magnetic configuration, and stacking arrangement, and to comment on the design of Weyl superlattices.
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4

Chang, Kai-Wei, Wei Ji, and Chao-Cheng Kaun. "Layer-separable and gap-tunable topological insulators." Physical Chemistry Chemical Physics 19, no. 5 (2017): 3932–36. http://dx.doi.org/10.1039/c6cp06932k.

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5

Jiang, Guobao, Yuan Zhou, Lulu Wang, and Ying Chen. "PMMA Sandwiched Bi2Te3 Layer as a Saturable Absorber in Mode-Locked Fiber Laser." Advances in Condensed Matter Physics 2018 (December 18, 2018): 1–5. http://dx.doi.org/10.1155/2018/7578050.

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In this paper, we fabricated a PMMA sandwiched Bi2Te3 self-assembly layer as a saturable absorber device, which was used as a passive mode locker for ultrafast pulse generation at the telecommunication band. Nanosheets of Bi2Te3 as a bulk topological insulator were successfully synthesized through a solvothermal treatment and self-assemble method to form a thin film at a water-air interface. In order to transfer the Bi2Te3 self-assembly layer to the optical fiber end, we design a construction of two PMMA layers sandwiched self-assembly layer. By incorporating this saturable absorber into an erbium-doped fiber laser, femtosecond mode-locking operation was experimentally demonstrated. The output pulse width is about 505 fs. Our results indicate that PMMA sandwiched topological insulator layer structure could be an improvement technology in traditional PMMA transfer method and could be used as a long-term stable saturable absorber for the passively mode locking lasers.
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6

Li, Jiaheng, Yang Li, Shiqiao Du, Zun Wang, Bing-Lin Gu, Shou-Cheng Zhang, Ke He, Wenhui Duan, and Yong Xu. "Intrinsic magnetic topological insulators in van der Waals layered MnBi2Te4-family materials." Science Advances 5, no. 6 (June 2019): eaaw5685. http://dx.doi.org/10.1126/sciadv.aaw5685.

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The interplay of magnetism and topology is a key research subject in condensed matter physics, which offers great opportunities to explore emerging new physics, such as the quantum anomalous Hall (QAH) effect, axion electrodynamics, and Majorana fermions. However, these exotic physical effects have rarely been realized experimentally because of the lack of suitable working materials. Here, we predict a series of van der Waals layered MnBi2Te4-related materials that show intralayer ferromagnetic and interlayer antiferromagnetic exchange interactions. We find extremely rich topological quantum states with outstanding characteristics in MnBi2Te4, including an antiferromagnetic topological insulator with the long-sought topological axion states on the surface, a type II magnetic Weyl semimetal with one pair of Weyl points, as well as a collection of intrinsic axion insulators and QAH insulators in even- and odd-layer films, respectively. These notable predictions, if proven experimentally, could profoundly change future research and technology of topological quantum physics.
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7

Hu, Xiangting, Ning Mao, Hao Wang, Chengwang Niu, Baibiao Huang, and Ying Dai. "Two-dimensional ferroelastic topological insulator with tunable topological edge states in single-layer ZrAsX (X = Br and Cl)." Journal of Materials Chemistry C 7, no. 31 (2019): 9743–47. http://dx.doi.org/10.1039/c9tc02713k.

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8

Zhang, Jun, Zeping Peng, Ajay Soni, Yanyuan Zhao, Yi Xiong, Bo Peng, Jianbo Wang, Mildred S. Dresselhaus, and Qihua Xiong. "Raman Spectroscopy of Few-Quintuple Layer Topological Insulator Bi2Se3Nanoplatelets." Nano Letters 11, no. 6 (June 8, 2011): 2407–14. http://dx.doi.org/10.1021/nl200773n.

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9

Zou, Yi-Chao, Zhi-Gang Chen, Enze Zhang, Fantai Kong, Yan Lu, Lihua Wang, John Drennan, et al. "Atomic disorders in layer structured topological insulator SnBi2Te4 nanoplates." Nano Research 11, no. 2 (August 17, 2017): 696–706. http://dx.doi.org/10.1007/s12274-017-1679-z.

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10

Sung, Ji Ho, Hoseok Heo, Inchan Hwang, Myungsoo Lim, Donghun Lee, Kibum Kang, Hee Cheul Choi, Jae-Hoon Park, Seung-Hoon Jhi, and Moon-Ho Jo. "Atomic Layer-by-Layer Thermoelectric Conversion in Topological Insulator Bismuth/Antimony Tellurides." Nano Letters 14, no. 7 (June 18, 2014): 4030–35. http://dx.doi.org/10.1021/nl501468k.

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11

Zhang, Ye, Qi You, Weichun Huang, Lanping Hu, Jianfeng Ju, Yanqi Ge, and Han Zhang. "Few-layer hexagonal bismuth telluride (Bi2Te3) nanoplates with high-performance UV-Vis photodetection." Nanoscale Advances 2, no. 3 (2020): 1333–39. http://dx.doi.org/10.1039/d0na00006j.

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12

Zhang, Guanhua, Huajun Qin, Jing Teng, Jiandong Guo, Qinlin Guo, Xi Dai, Zhong Fang, and Kehui Wu. "Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3." Applied Physics Letters 95, no. 5 (August 3, 2009): 053114. http://dx.doi.org/10.1063/1.3200237.

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13

Fang, Mingsheng, Zhengyu Wang, Honggang Gu, Mingyu Tong, Baokun Song, Xiangnan Xie, Tong Zhou, et al. "Layer-dependent dielectric permittivity of topological insulator Bi2Se3 thin films." Applied Surface Science 509 (April 2020): 144822. http://dx.doi.org/10.1016/j.apsusc.2019.144822.

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14

Yao, Xiong, Hee Taek Yi, Deepti Jain, Myung-Geun Han, and Seongshik Oh. "Spacer-Layer-Tunable Magnetism and High-Field Topological Hall Effect in Topological Insulator Heterostructures." Nano Letters 21, no. 14 (July 15, 2021): 5914–19. http://dx.doi.org/10.1021/acs.nanolett.1c00668.

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15

Yeats, Andrew L., Yu Pan, Anthony Richardella, Peter J. Mintun, Nitin Samarth, and David D. Awschalom. "Persistent optical gating of a topological insulator." Science Advances 1, no. 9 (October 2015): e1500640. http://dx.doi.org/10.1126/sciadv.1500640.

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The spin-polarized surface states of topological insulators (TIs) are attractive for applications in spintronics and quantum computing. A central challenge with these materials is to reliably tune the chemical potential of their electrons with respect to the Dirac point and the bulk bands. We demonstrate persistent, bidirectional optical control of the chemical potential of (Bi,Sb)2Te3thin films grown on SrTiO3. By optically modulating a space-charge layer in the SrTiO3substrates, we induce a persistent field effect in the TI films comparable to electrostatic gating techniques but without additional materials or processing. This enables us to optically pattern arbitrarily shapedp- andn-type regions in a TI, which we subsequently image with scanning photocurrent microscopy. The ability to optically write and erase mesoscopic electronic structures in a TI may aid in the investigation of the unique properties of the topological insulating phase. The gating effect also generalizes to other thin-film materials, suggesting that these phenomena could provide optical control of chemical potential in a wide range of ultrathin electronic systems.
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16

Li, Yaoxin, Chang Liu, Yongchao Wang, Hao Li, Yang Wu, Jinsong Zhang, and Yayu Wang. "Gate-tunable magnetoresistance in six-septuple-layer MnBi2Te4." Journal of Physics D: Applied Physics 55, no. 10 (December 1, 2021): 104001. http://dx.doi.org/10.1088/1361-6463/ac3538.

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Abstract The recently discovered antiferromagnetic topological insulator MnBi2Te4 hosts many exotic topological quantum phases such as the axion insulator and the Chern insulator. Here we report on systematic gate-voltage-dependent magneto-transport studies in six-septuple-layer MnBi2Te4. In the p-type carrier regime, we observe positive linear magnetoresistance (MR) when MnBi2Te4 is polarized in the ferromagnetic state by an out-of-plane magnetic field. Whereas in the n-type regime, distinct negative MR behaviors are observed. The behaviors of magnetoresistance in both regimes are highly robust against temperature up to the Néel temperature. Within the antiferromagnetic regime, the behavior of MR exhibits a transition from negative to positive under the control of gate voltage. The boundaries of the MR phase diagram can be explicitly marked by the gate-voltage-independent magnetic fields that characterize the processes of the spin-flop transition. The rich transport phenomena demonstrate the intricate interplay between topology, magnetism and dimensionality in MnBi2Te4.
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17

Zhu, Zhen, Michał Papaj, Xiao-Ang Nie, Hao-Ke Xu, Yi-Sheng Gu, Xu Yang, Dandan Guan, et al. "Discovery of segmented Fermi surface induced by Cooper pair momentum." Science 374, no. 6573 (December 10, 2021): 1381–85. http://dx.doi.org/10.1126/science.abf1077.

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Imaging a peculiar Fermi surface Running a current through a superconductor can cause the superconducting gap to close on a section of the Fermi surface. However, observing this segmented Fermi surface directly is tricky. To do so, Zhu et al . worked with a thin film of the topological insulator bismuth telluride placed on top of superconducting niobium diselenide. A small applied magnetic field caused a screening current, which in turn led to a segmented Fermi surface in the topological insulator layer. Using a scanning tunneling microscope, the researchers were able to map out this Fermi surface. —JS
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18

Virwani, Kumar, Sara E. Harrison, Aakash Pushp, Teya Topuria, Eugene Delenia, Philip Rice, Andrew Kellock, et al. "Controlled removal of amorphous Se capping layer from a topological insulator." Applied Physics Letters 105, no. 24 (December 15, 2014): 241605. http://dx.doi.org/10.1063/1.4904803.

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19

Traverso, Simone, Niccolò Traverso Ziani, and Maura Sassetti. "Effects of the Vertices on the Topological Bound States in a Quasicrystalline Topological Insulator." Symmetry 14, no. 8 (August 19, 2022): 1736. http://dx.doi.org/10.3390/sym14081736.

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The experimental realization of twisted bilayer graphene strongly pushed the inspection of bilayer systems. In this context, it was recently shown that a two layer Haldane model with a thirty degree rotation angle between the layers represents a higher order topological insulator, with zero-dimensional states isolated in energy and localized at the physical vertices of the nanostructure. We show, within a numerical tight binding approach, that the energy of the zero dimensional states strongly depends on the geometrical structure of the vertices. In the most extreme cases, once a specific band gap is considered, these bound states can even disappear just by changing the vertex structure.
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20

Holtgrewe, Kris, Conor Hogan, and Simone Sanna. "Evolution of Topological Surface States Following Sb Layer Adsorption on Bi2Se3." Materials 14, no. 7 (April 2, 2021): 1763. http://dx.doi.org/10.3390/ma14071763.

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Thin antimony layers adsorbed on bismuth selenide (Bi2Se3) present an exciting topological insulator system. Much recent effort has been made to understand the synthesis and electronic properties of the heterostructure, particularly the migration of the topological surface states under adsorption. However, the intertwinement of the topological surface states of the pristine Bi2Se3 substrate with the Sb adlayer remains unclear. In this theoretical work, we apply density functional theory (DFT) to model heterostructures of single and double atomic layers of Sb on a bismuth selenide substrate. We thereby discuss established and alternative structural models, as well as the hybridization of topological surface states with the Sb states. Concerning the geometry, we reveal the possibility of structures with inverted Sb layers which are energetically close to the established ones. The formation energy differences are below 10 meV/atom. Concerning the hybridization, we trace the band structure evolution as a function of the adlayer-substrate distance. By following changes in the connection between the Kramers pairs, we extract a series of topological phase transitions. This allows us to explain the origin of the complex band structure, and ultimately complete our knowledge about this peculiar system.
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21

Lu, Hua, Yangwu Li, Zengji Yue, Mingwen Zhang, Xuetao Gan, Dikun Li, Dong Mao, and Jianlin Zhao. "Integration of topological insulator nanogap with atomic single layer for boosting photoluminescence." Optical Materials 122 (December 2021): 111786. http://dx.doi.org/10.1016/j.optmat.2021.111786.

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22

Liu, Han, and Peide D. Ye. "Atomic-layer-deposited Al2O3 on Bi2Te3 for topological insulator field-effect transistors." Applied Physics Letters 99, no. 5 (August 2011): 052108. http://dx.doi.org/10.1063/1.3622306.

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23

Tajkov, Zoltán, Dávid Visontai, László Oroszlány, and János Koltai. "Topological Phase Diagram of BiTeX–Graphene Hybrid Structures." Applied Sciences 9, no. 20 (October 15, 2019): 4330. http://dx.doi.org/10.3390/app9204330.

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Combining graphene with other novel layered materials is a possible way for engineering the band structure of charge carriers. Strong spin-orbit coupling in BiTeX compounds and the recent fabrication of a single layer of BiTeI points towards a feasible experimental realization of a Kane–Mele phase in graphene-based heterostructures. Here, we theoretically demonstrate the tunability of the topological phase of hybrid systems built from graphene and BiTeX (X = I, Br, Cl) layers by uniaxial in-plane tensile and out-of plane compressive strain. We show that structural stress inherently present in fabricated samples could induce a topological phase transition, thus turning the sample in a novel experimental realization of a time reversal invariant topological insulator.
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24

Bake, Abdulhakim, Weiyao Zhao, David Mitchell, Xiaolin Wang, Mitchell Nancarrow, and David Cortie. "Lamellae preparation for atomic-resolution STEM imaging from ion-beam-sensitive topological insulator crystals." Journal of Vacuum Science & Technology A 40, no. 3 (May 2022): 033203. http://dx.doi.org/10.1116/6.0001771.

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Good specimen quality is a key factor in achieving successful scanning transmission electron microscope analysis. Thin and damage-free specimens are prerequisites for obtaining atomic-resolution imaging. Topological insulator single crystals and thin films in the chalcogenide family such as Sb2Te3 are sensitive to electron and ion beams. It is, therefore, challenging to prepare a lamella suitable for high-resolution imaging from these topological insulator materials using standard focused ion-beam instruments. We have developed a modified method to fabricate thin focused ion-beam (FIB) lamellae with minimal ion-beam damage and artifacts. The technique described in the current study enables the reliable preparation of high-quality transmission electron microscope (TEM) specimens necessary for studying ultra-thin surface regions. We have successfully demonstrated that the careful selection of FIB milling parameters at each stage minimizes the damage layer without the need for post-treatment.
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25

Ghasempour Ardakani, Abbas, and Zahra Zare. "Strong Faraday rotation in a topological insulator single layer using dielectric multilayered structures." Journal of the Optical Society of America B 38, no. 9 (August 16, 2021): 2562. http://dx.doi.org/10.1364/josab.431370.

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26

Liao, Liyang, Peng Chen, Xufeng Kou, Feng Pan, and Cheng Song. "Tuning the magnetotransport behavior of topological insulator with a transition-metal oxide layer." Journal of Physics: Condensed Matter 31, no. 40 (July 12, 2019): 405001. http://dx.doi.org/10.1088/1361-648x/ab2f53.

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27

Talantsev, E. F., W. P. Crump, and J. L. Tallon. "Two-band induced superconductivity in single-layer graphene and topological insulator bismuth selenide." Superconductor Science and Technology 31, no. 1 (November 29, 2017): 015011. http://dx.doi.org/10.1088/1361-6668/aa9800.

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28

Gong, Qi, and Guiling Zhang. "Spin-Orbit Coupling Electronic Structures of Organic-Group Functionalized Sb and Bi Topological Monolayers." Nanomaterials 12, no. 12 (June 14, 2022): 2041. http://dx.doi.org/10.3390/nano12122041.

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Electronic band-gap is a key factor in applying two-dimensional (2D) topological insulators into room-temperature quantum spin Hall effect (QSH) spintronic devices. Employing pseudopotential plane-wave first-principles calculations, we investigate spin-orbit coupling (SOC) electronic structures of the novel 2D topological insulator series of antimony (Sb) and bismuth (Bi) monolayers (isolated double atomic layers) functionalized by organic-groups (methyl, amino and hydroxyl). Cohesive energies and phonon frequency dispersion spectra indicate that these organic-group decorated Sb and Bi monolayers possess structural stability in both energetic statics and lattice dynamics. The giant electronic band-gaps adequate for room-temperature applications are attributed to the effective SOC enhancement of group functionalization. The nontrivial topology of these novel 2D monolayer materials is verified by the Z2 invariant derived from wave-function parity and edge-states of their nanoribbons, which is prospective for QSH spintronic devices. The chemical functional group changes the p-orbital component of Fermi level electrons, leading to strong intra-layer spin-orbit coupling, opening a large band-gap of approaching 1.4 eV at Dirac-cone point and resulting in a global indirect band-gap of 0.75 eV, which, even underestimated, is adequate for room-temperature operations. Sb and Bi monolayers functionalized by organic groups are also predicted to maintain stable nontrivial topology under in-layer biaxial strain, which is suitable for epitaxy technology to realize QSH spintronic devices.
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29

Tung, Jen-Chuan, Chi-Hsuan Lee, Po-Liang Liu, and Yin-Kuo Wang. "Electronic Band Structures of the Possible Topological Insulator Pb2BiBrO6 and Pb2SeTeO6 Double Perovskite: An Ab Initio Study." Applied Sciences 12, no. 12 (June 10, 2022): 5913. http://dx.doi.org/10.3390/app12125913.

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Using the frameworks of density functional theory, we found a new class of three-dimensional (3D) topological insulators (TIs) in Pb2BiBrO6 and Pb2SeTeO6 double perovskites. Our ab initio theoretical calculations show that Pb2BiBrO6 and Pb2SeTeO6 are Z2 nontrivial, and their bandgaps are 0.390 eV and 0.181 eV, respectively. The topology comes from two mechanisms. Firstly, the band inversion occurs at Γ point in the absence of spin-orbit interactions and secondly, the bandgap is induced by the SOC. This results in a larger bandgap for this new class of topological insulators than conventional TI. In Pb2BiBrO6 double perovskites, our slab calculations confirm that the topology-protected surface metallic bands come from the BiBrO4 surface which means that one can build a transport device using Pb2BiBrO6 double perovskites with a PbO layer as an outmost protection layer. The mechanical stabilities such as bulk, shear, Young’s moduli, Poisson’s and Pugh’s ratio, longitudinal, transverse, and average sound velocity, together with Debye temperature are also studied. Our results show that these Pb2AA’O6 (A = Sb and Bi; A’ = Br and I) and Pb2SeTeO6 are mechanically stable.
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30

Liu, Tingmin, Linyi Zhou, and Y. C. Tao. "Anomalous Josephson effect modulated by magnetic misorientation in a topological unconventional superconductor hybrid structure." Europhysics Letters 136, no. 1 (October 1, 2021): 17004. http://dx.doi.org/10.1209/0295-5075/ac2f0e.

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Abstract We study the anomalous Josephson effect induced by magnetic misorientation of asymmetric s-wave superconductor (SC)/ferromagnet insulator (FI)/normal layer/FI/d-wave SC junctions on a surface of topological insulator (TI). For the out-of-plane case, the magnetic misorientation not only leads to anomalous Josephson effects, but also realizes state transitions. However, for the in-plane case, the state transitions do not turn up any more. In particular, the plateaus phenomenon for d xy -wave SC junction emerges all the time. In addition, in the context of the in-plane case, the supercurrent rectification can be modulated by the magnetic misorientation. These unique phenomena can be employed to identify different d-wave superconductivities of three-dimensional TI and manufacture the supercurrent devices with such functions as phase storing, rectification, and quantum computation.
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31

Luo, Zhengqian, Yizhong Huang, Jian Weng, Huihui Cheng, Zhiqing Lin, Bin Xu, Zhiping Cai, and Huiying Xu. "106μm Q-switched ytterbium-doped fiber laser using few-layer topological insulator Bi_2Se_3 as a saturable absorber." Optics Express 21, no. 24 (November 21, 2013): 29516. http://dx.doi.org/10.1364/oe.21.029516.

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32

Song, Can-Li, Yi-Lin Wang, Ye-Ping Jiang, Yi Zhang, Cui-Zu Chang, Lili Wang, Ke He, et al. "Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy." Applied Physics Letters 97, no. 14 (October 4, 2010): 143118. http://dx.doi.org/10.1063/1.3494595.

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33

Eddrief, Mahmoud, Paola Atkinson, Victor Etgens, and Bernard Jusserand. "Low-temperature Raman fingerprints for few-quintuple layer topological insulator Bi2Se3films epitaxied on GaAs." Nanotechnology 25, no. 24 (May 23, 2014): 245701. http://dx.doi.org/10.1088/0957-4484/25/24/245701.

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34

Liang, Jinghua, Long Cheng, Jie Zhang, Huijun Liu, and Zhenyu Zhang. "Maximizing the thermoelectric performance of topological insulator Bi2Te3films in the few-quintuple layer regime." Nanoscale 8, no. 16 (2016): 8855–62. http://dx.doi.org/10.1039/c6nr00724d.

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35

Hao, Guolin, Xiang Qi, Yundan Liu, Zongyu Huang, Hongxing Li, Kai Huang, Jun Li, Liwen Yang, and Jianxin Zhong. "Ambipolar charge injection and transport of few-layer topological insulator Bi2Te3 and Bi2Se3 nanoplates." Journal of Applied Physics 111, no. 11 (June 2012): 114312. http://dx.doi.org/10.1063/1.4729011.

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36

Pedramrazi, Zahra, Charlotte Herbig, Artem Pulkin, Shujie Tang, Madeleine Phillips, Dillon Wong, Hyejin Ryu, et al. "Manipulating Topological Domain Boundaries in the Single-Layer Quantum Spin Hall Insulator 1T′–WSe2." Nano Letters 19, no. 8 (July 22, 2019): 5634–39. http://dx.doi.org/10.1021/acs.nanolett.9b02157.

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37

Chen, Shuqing, Lili Miao, Xing Chen, Yu Chen, Chujun Zhao, Subhadeep Datta, Ying Li, et al. "Few-Layer Topological Insulator for All-Optical Signal Processing Using the Nonlinear Kerr Effect." Advanced Optical Materials 3, no. 12 (September 16, 2015): 1769–78. http://dx.doi.org/10.1002/adom.201500347.

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38

Zheng, L., T. T. Li, R. Jin, M. Lei, Y. J. Xu, X. S. Yang, K. Zhao, B. Sun, Y. Zhang, and Y. Zhao. "The interface superconductivity of Bi2Se3/Fe–Se heterostructure." International Journal of Modern Physics B 32, no. 32 (December 30, 2018): 1850355. http://dx.doi.org/10.1142/s0217979218503551.

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Bi2Se3/Fe–Se heterostructures on Si(100) substrates have been prepared by radio frequency magnetron sputtering technique. The thickness of FeSe2 film is an important factor for the properties of Bi2Se3/Fe–Se heterostructures. Our Bi2Se3/Fe–Se heterostructural samples showed ferromagnetism, which increase with increasing thickness of FeSe2 layer. However, when the FeSe2 layer is as thin as 20 nm, superconductivity could be observed through magnetization measurements, due to the existence of superconducting Fe–Se. Thus the Bi2Se3/Fe–Se heterostructure provides an approach to achieve both ferromagnetism and superconductivity simultaneously in interface, as well as to realize the interplay between a superconductor and a topological insulator.
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39

Yeats, Andrew L., Peter J. Mintun, Yu Pan, Anthony Richardella, Bob B. Buckley, Nitin Samarth, and David D. Awschalom. "Local optical control of ferromagnetism and chemical potential in a topological insulator." Proceedings of the National Academy of Sciences 114, no. 39 (September 12, 2017): 10379–83. http://dx.doi.org/10.1073/pnas.1713458114.

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Many proposed experiments involving topological insulators (TIs) require spatial control over time-reversal symmetry and chemical potential. We demonstrate reconfigurable micron-scale optical control of both magnetization (which breaks time-reversal symmetry) and chemical potential in ferromagnetic thin films of Cr-(Bi,Sb)2Te3 grown on SrTiO3. By optically modulating the coercivity of the films, we write and erase arbitrary patterns in their remanent magnetization, which we then image with Kerr microscopy. Additionally, by optically manipulating a space charge layer in the underlying SrTiO3 substrates, we control the local chemical potential of the films. This optical gating effect allows us to write and erase p-n junctions in the films, which we study with photocurrent microscopy. Both effects are persistent and may be patterned and imaged independently on a few-micron scale. Dynamic optical control over both magnetization and chemical potential of a TI may be useful in efforts to understand and control the edge states predicted at magnetic domain walls in quantum anomalous Hall insulators.
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40

Кавеев, А. К., and О. Е. Терещенко. "Оптимизация буферного диэлектрического слоя для создания малодефектных эпитаксиальных пленок топологического изолятора Pb-=SUB=-1-x-=/SUB=-Sn-=SUB=-x-=/SUB=-Te c x≥0.4." Физика и техника полупроводников 56, no. 7 (2022): 642. http://dx.doi.org/10.21883/ftp.2022.07.52753.08.

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We have optimized the growth conditions of the buffer layer for further deposition of Pb1−x SnxTe (x ≥ 0.4), which has the properties of a crystalline topological insulator. To this end, a three-component heterostructure consisting of CaF2, BaF2, and Pb0.7Sn0.3Te : In layers was formed and optimized on the Si(111) surface. The surface morphology of this structure was studied depending on the temperature growth regimes and the optimal combination of growth parameters was selected from the point of view of smoothness and crystalline quality.
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41

Xu, Jin. "Cloaking magnetic field and generating electric field with topological insulator and superconductor bi-layer sphere." AIP Advances 7, no. 12 (December 2017): 125220. http://dx.doi.org/10.1063/1.5010205.

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42

Aparimita, Adyasha, C. Sripan, R. Ganesan, and R. Naik. "Photo and thermal induced Bi2Se3 formation from Bi/GeSe2 hetero junction layer for topological insulator." Optical Materials 89 (March 2019): 157–63. http://dx.doi.org/10.1016/j.optmat.2019.01.043.

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43

Sapkota, Yub Raj, Asma Alkabsh, Aaron Walber, Hassana Samassekou, and Dipanjan Mazumdar. "Optical evidence for blue shift in topological insulator bismuth selenide in the few-layer limit." Applied Physics Letters 110, no. 18 (May 2017): 181901. http://dx.doi.org/10.1063/1.4982631.

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44

Chen, Jihan, Jaehyun Kim, Nirakar Poudel, Bingya Hou, Lang Shen, Haotian Shi, Li Shi, and Stephen Cronin. "Enhanced thermoelectric efficiency in topological insulator Bi2Te3 nanoplates via atomic layer deposition-based surface passivation." Applied Physics Letters 113, no. 8 (August 20, 2018): 083904. http://dx.doi.org/10.1063/1.5030674.

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45

Men’shov, V. N., V. V. Tugushev, and E. V. Chulkov. "Bound states induced by a ferromagnetic delta-layer inserted into a three-dimensional topological insulator." JETP Letters 96, no. 7 (December 2012): 445–51. http://dx.doi.org/10.1134/s0021364012190113.

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46

Liang, Jing, Yu Jun Zhang, Xiong Yao, Hui Li, Zi-Xiang Li, Jiannong Wang, Yuanzhen Chen, and Iam Keong Sou. "Studies on the origin of the interfacial superconductivity of Sb2Te3/Fe1+yTe heterostructures." Proceedings of the National Academy of Sciences 117, no. 1 (December 19, 2019): 221–27. http://dx.doi.org/10.1073/pnas.1914534117.

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The recent discovery of the interfacial superconductivity (SC) of the Bi2Te3/Fe1+yTe heterostructure has attracted extensive studies due to its potential as a novel platform for trapping and controlling Majorana fermions. Here we present studies of another topological insulator (TI)/Fe1+yTe heterostructure, Sb2Te3/Fe1+yTe, which also has an interfacial 2-dimensional SC. The results of transport measurements support that reduction of the excess Fe concentration of the Fe1+yTe layer not only increases the fluctuation of its antiferromagnetic (AFM) order but also enhances the quality of the SC of this heterostructure system. On the other hand, the interfacial SC of this heterostructure was found to have a wider-ranging TI-layer thickness dependence than that of the Bi2Te3/Fe1+yTe heterostructure, which is believed to be attributed to the much higher bulk conductivity of Sb2Te3that enhances indirect coupling between its top and bottom topological surface states (TSSs). Our results provide evidence of the interplay among the AFM order, itinerant carries from the TSSs, and the induced interfacial SC of the TI/Fe1+yTe heterostructure system.
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Yang, Jingnan, Yuhang Li, Kan Tian, Fenfen Liu, Xiaodan Dou, Yanjun Ma, Wenjuan Han, Honghao Xu, and Junhai Liu. "Passive Q-switching of an Yb:GdCa4O(BO3)3 laser induced by a few-layer Bi2Te3 topological insulator saturable absorber." Laser Physics Letters 15, no. 12 (October 23, 2018): 125802. http://dx.doi.org/10.1088/1612-202x/aae5b0.

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48

Kaveev, A. K., D. N. Bondarenko, and O. E. Tereshchenko. "The dependence of surface morphology on the growth temperature of the Pb0.7Sn0.3Te/Si(111) topological insulator thin films." Journal of Physics: Conference Series 2103, no. 1 (November 1, 2021): 012086. http://dx.doi.org/10.1088/1742-6596/2103/1/012086.

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Abstract The possibility of epitaxial growth of Pb0.7Sn0.3Te crystalline topological insulator films on the Si(111) surface was shown and epitaxial relations were found. It was shown that, depending on the growth temperature, it is possible to control not only the character of the morphology, but also, to a significant extent, the smoothness of the epitaxial layer surface, which is extremely important for further transport measurements of the films. Analysis of the grown films surface morphology made it possible to establish the average value of the height and lateral size of the terraces and islands forming Pb0.7Sn0.3Te surface.
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Longo, Emanuele, Claudia Wiemer, Matteo Belli, Raimondo Cecchini, Massimo Longo, Matteo Cantoni, Christian Rinaldi, et al. "Ferromagnetic resonance of Co thin films grown by atomic layer deposition on the Sb2Te3 topological insulator." Journal of Magnetism and Magnetic Materials 509 (September 2020): 166885. http://dx.doi.org/10.1016/j.jmmm.2020.166885.

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50

Xie, Hangkai, Fucong Fei, Fenzhen Fang, Bo Chen, Jingwen Guo, Yu Du, Wuyi Qi, et al. "Charge carrier mediation and ferromagnetism induced in MnBi6Te10 magnetic topological insulators by antimony doping." Journal of Physics D: Applied Physics 55, no. 10 (December 6, 2021): 104002. http://dx.doi.org/10.1088/1361-6463/ac3790.

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Abstract A new kind of intrinsic magnetic topological insulator (MTI) MnBi2Te4 family has shed light on the observation of novel topological quantum effects such as the quantum anomalous Hall effect (QAHE). However, strong anti-ferromagnetic (AFM) coupling and high carrier concentration in the bulk hinder practical applications. In closely related materials MnBi4Te7 and MnBi6Te10, the interlayer magnetic coupling is greatly suppressed by Bi2Te3 layer intercalation. However, AFM is still the ground state in these compounds. Here, by magnetic and transport measurements, we demonstrate that a Sb substitutional dopant plays a dual role in MnBi6Te10, which can not only adjust the charge carrier type and concentration, but also induces the solid into a ferromagnetic (FM) ground state. The AFM ground state region, which is also close to the charge neutral point, can be found in the phase diagram of Mn(Sb x Bi1−x )6Te10 when x ∼ 0.25. An intrinsic FM-MTI candidate is thus demonstrated, which may take us a step closer to realizing a high-quality and high-temperature QAHE and related topological quantum effects in the future.
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