Academic literature on the topic 'TMDC materials'
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Journal articles on the topic "TMDC materials"
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Huang, Lujun, Alex Krasnok, Andrea Alú, Yiling Yu, Dragomir Neshev, and Andrey E. Miroshnichenko. "Enhanced light–matter interaction in two-dimensional transition metal dichalcogenides." Reports on Progress in Physics 85, no. 4 (March 8, 2022): 046401. http://dx.doi.org/10.1088/1361-6633/ac45f9.
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Abstract Two-dimensional (2D) transition metal dichalcogenide (TMDC) materials, such as MoS2, WS2, MoSe2, and WSe2, have received extensive attention in the past decade due to their extraordinary electronic, optical and thermal properties. They evolve from indirect bandgap semiconductors to direct bandgap semiconductors while their layer number is reduced from a few layers to a monolayer limit. Consequently, there is strong photoluminescence in a monolayer (1L) TMDC due to the large quantum yield. Moreover, such monolayer semiconductors have two other exciting properties: large binding energy of excitons and valley polarization. These properties make them become ideal materials for various electronic, photonic and optoelectronic devices. However, their performance is limited by the relatively weak light–matter interactions due to their atomically thin form factor. Resonant nanophotonic structures provide a viable way to address this issue and enhance light–matter interactions in 2D TMDCs. Here, we provide an overview of this research area, showcasing relevant applications, including exotic light emission, absorption and scattering features. We start by overviewing the concept of excitons in 1L-TMDC and the fundamental theory of cavity-enhanced emission, followed by a discussion on the recent progress of enhanced light emission, strong coupling and valleytronics. The atomically thin nature of 1L-TMDC enables a broad range of ways to tune its electric and optical properties. Thus, we continue by reviewing advances in TMDC-based tunable photonic devices. Next, we survey the recent progress in enhanced light absorption over narrow and broad bandwidths using 1L or few-layer TMDCs, and their applications for photovoltaics and photodetectors. We also review recent efforts of engineering light scattering, e.g., inducing Fano resonances, wavefront engineering in 1L or few-layer TMDCs by either integrating resonant structures, such as plasmonic/Mie resonant metasurfaces, or directly patterning monolayer/few layers TMDCs. We then overview the intriguing physical properties of different van der Waals heterostructures, and their applications in optoelectronic and photonic devices. Finally, we draw our opinion on potential opportunities and challenges in this rapidly developing field of research.
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Tao, Guang-Yi, Peng-Fei Qi, Yu-Chen Dai, Bei-Bei Shi, Yi-Jing Huang, Tian-Hao Zhang, and Zhe-Yu Fang. "Enhancement of photoluminescence of monolayer transition metal dichalcogenide by subwavelength TiO<sub>2</sub> grating." Acta Physica Sinica 71, no. 8 (2022): 087801. http://dx.doi.org/10.7498/aps.71.20212358.
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Monolayer transition metal dichalcogenide (TMDC) has a direct band gap and can produce strong photoluminescence(PL), thereby possessing a wide application prospect in photoelectric devices and photoelectric detection fields. However, its PL efficiency needs further improving because its monolayer is of atomic thickness only, besides, it has non-radiative recombination of excitons. In this study, a combination structure of a gold film, titanium dioxide subwavelength gratings and monolayer TMDCs is designed, which can greatly improve PL efficiency of monolayer TMDC. The spontaneous emission rate can be controlled by the Purcell effect, and the maximum enhancement of photoluminescence is as high as 3.4 times. In this paper, the PL signal of monolayer WS<sub>2</sub> and monolayer WSe<sub>2</sub> on the designed structure are studied. The feasibility of the enhancement of PL of monolayer TMDC in the coupling structure of monolayer TMDC and the subwavelength grating is verified experimentally, which provides a new idea for the application of two-dimensional materials to optoelectronic devices.
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Zhang, Yudong, Yukun Chen, Min Qian, Haifen Xie, and Haichuan Mu. "Chemical vapor deposited WS2/MoS2 heterostructure photodetector with enhanced photoresponsivity." Journal of Physics D: Applied Physics 55, no. 17 (January 31, 2022): 175101. http://dx.doi.org/10.1088/1361-6463/ac4cf7.
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Abstract Two-dimensional transition metal dichalcogenides (TMDCs) have attracted great interest due to their unique semiconductor properties. Among all TMDC materials, MoS2 and WS2 are promising for composing heterostructures. However, traditional TMDC heterostructure fabrication depends on transfer process, with drawbacks of interface impurity and small size. In this work, a two-step chemical vapor deposition (CVD) process was applied to synthesize large-scale WS2/MoS2 heterostructure. Surface morphology and crystal structure characterizations demonstrate the high-quality WS2/MoS2 heterostructure. The WS2/MoS2 heterostructure photodetector fabricated by photolithography exhibits an enhanced photoresponsivity up to 370 A W−1 in comparison with single WS2 or MoS2 devices. This study suggests a direct CVD growth of large-scale TMDC heterostructure films with clean interface. The built-in electric field at interface contributes to the separation of photo-generated electron–hole pairs, leading to enhanced photocurrent and responsivity, and showing promising potentials in photo-electric applications.
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Miller-Link, Elisa. "(Invited) Electrochemical Conversion of Nitrogen to Ammonia Using 2D Transition Metal Dichalcogenides." ECS Meeting Abstracts MA2022-02, no. 49 (October 9, 2022): 1926. http://dx.doi.org/10.1149/ma2022-02491926mtgabs.
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We use 2D transition metal dichalcogenide (TMDC) catalysts to facilitate the nitrogen (N2) reduction to ammonia (NH3) via dark electrocatalysis. TMDCs are an important class of materials because they can be reduced to 2D, where their quantum confined properties are easily manipulated for various applications. Transition metal-based catalysts offer a unique opportunity to exploit the d electrons and orbitals for N2 activation, where we specifically compare theoretically and experimentally MoS2, TiS2, and VS2. In addition, the 2D TMDC catalysts are highly tunable 2D catalysts, where the band energetics, surface functionalization, defects, and phase can be tuned to control the N2 reactivity. We use indophenol and 1H NMR with isotope labeling to identify and quantify NH3 from the catalytic reaction and not from setup/system contaminants; moreover, we use density functional theory to add insight into the 2D TMDC active site and reaction pathway. Through various attempts and iterations, we have many lessons learned about experimental and theoretical setup that will be communicated.
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Xie, Yong, Xiaohua Ma, Zhan Wang, Tang Nan, Ruixue Wu, Peng Zhang, Haolin Wang, Yabin Wang, Yongjie Zhan, and Yue Hao. "NaCl-Assisted CVD Synthesis, Transfer and Persistent Photoconductivity Properties of Two-Dimensional Transition Metal Dichalcogenides." MRS Advances 3, no. 6-7 (2018): 365–71. http://dx.doi.org/10.1557/adv.2018.156.
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AbstractTransition metal dichalcogenides (TMDC), such as MoS2, WS2 have attracted attention due to their mechanical and electronic properties in their two dimensional (2D) structures. Here, we report a facile growth of monolayer TMDC using oxide source materials with the assistant of NaCl. The addition of NaCl can enhance the lateral growth and widen the growth window of TMDC. Through carefully controlling the growth parameters, large area growth of TMDC can be achieved. Two steps E-beam lithography was utilized to fabricate electrodes of TMDC. The phototransistors made from the CVD grown TMDC show strong persistent photoconductivity (PPC). It was finally shown that TMDC device capping with h-BN could have suppressed PPC effects.
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DAVE, MEHUL. "Optical analysis for few TMDC materials." Bulletin of Materials Science 38, no. 7 (December 2015): 1791–96. http://dx.doi.org/10.1007/s12034-015-0960-6.
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Bassman, Lindsay, Aravind Krishnamoorthy, Aiichiro Nakano, Rajiv K. Kalia, Hiroyuki Kumazoe, Masaaki Misawa, Fuyuki Shimojo, and Priya Vashishta. "Picosecond Electronic and Structural Dynamics in Photo-excited Monolayer MoSe2." MRS Advances 3, no. 6-7 (2018): 391–96. http://dx.doi.org/10.1557/adv.2018.259.
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Monolayers of semiconducting transitional metal dichalcogenides (TMDC) are emerging as strong candidate materials for next generation electronic and optoelectronic devices, with applications in field-effect transistors, valleytronics, and photovoltaics. Prior studies have demonstrated strong light-matter interactions in these materials, suggesting optical control of material properties as a promising route for their functionalization. However, the electronic and structural dynamics in response to electronic excitation have not yet been fully elucidated. In this work, we use non-adiabatic quantum molecular dynamics simulations based on time-dependent density functional theory to study lattice dynamics of a model TMDC monolayer of MoSe2 after electronic excitation. The simulation results show rapid, sub-picosecond lattice response, as well as finite-size effects. Understanding the sub-picosecond atomic dynamics is important for the realization of optical control of the material properties of monolayer TMDCs, which is a hopeful, straightforward tactic for functionalizing these materials.
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Ahmed, Hasan, and Viktoriia E. Babicheva. "Nanostructured Tungsten Disulfide WS2 as Mie Scatterers and Nanoantennas." MRS Advances 5, no. 35-36 (2020): 1819–26. http://dx.doi.org/10.1557/adv.2020.173.
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ABSTRACTNanoparticles of high-refractive-index materials like semiconductors can achieve confinement of light at the subwavelength scale because of the excitation of Mie resonances. The nanostructures out of high-refractive-index materials have extensively been studied theoretically and realized in experiments exploring a wide range of photonic applications. Recently, transition metal dichalcogenides (TMDCs) from the family of van der Waals layered materials have been shown to exhibit tailorable optical properties along with high refractive index and strong anisotropy. We envision that TMDCs are a promising material platform for designing metasurfaces and ultra-thin optical elements: these van der Waals materials show a strong spectral response on light excitations in visible and near-infrared ranges, and metasurface properties can be controlled by nanoantenna dimensions and their arrangement. In this work, we investigate a periodic array of disk-shaped nanoantennas made of a TMDC material, tungsten disulfide WS2, placed on top of a silicon layer and oxide substrate. We show that the nanostructure resonance in TMDC disk-shaped nanoantenna array can be controlled by the variation in silicon layer thickness and have a dependence on the presence of index-match superstrate cover. We also report on the spectral features in absorption and reflection profiles of the same structure with different surrounding index.
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Lattyak, Colleen, Volker Steenhoff, Kai Gehrke, Martin Vehse, and Carsten Agert. "Two-Dimensional Absorbers for Solar Windows: A Simulation." Zeitschrift für Naturforschung A 74, no. 8 (August 27, 2019): 683–88. http://dx.doi.org/10.1515/zna-2019-0134.
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AbstractIn the future, many modern buildings may rely on solar windows for energy production. Large buildings often have glass facades that have the potential to convert sunlight to electrical power. The standard photovoltaic materials used today are bulky and not transparent, making them poor candidates for solar windows. Transition metal dichalcogenides (TMDCs) and other two-dimensional absorbers are a good alternative because of their unique properties and high transparency at the monolayer and few-layer regime. This work shows the potential for TMDC-based solar windows by simulating the transmission, quantum efficiency, current density, and colour appearance of different solar cell configurations. Different contacts were investigated, along with the influence of contact thickness, to demonstrate colour-neutral solar cells. In addition, four TMDC materials were compared: MoS2, MoSe2, WS2, and WSe2. Colour-neutral solar cells with transparencies of 35 % to 55 % are presented, where a current density of 8.33 mA/cm2 was calculated for a solar cell with a 5-nm absorbing layer of MoSe2. While there are still challenges to overcome in terms of production, our simulations show that it is possible to use TMDCs for colour-neutral solar windows and act as a guideline for further research.
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Tang, Shin-Yi, Teng-Yu Su, Tzu-Yi Yang, and Yu-Lun Chueh. "Novel Design of 0D Nanoparticles-2D Transition-Metal Dichalcogenides Heterostructured Devices for High-Performance Optical and Gas-Sensing Applications." ECS Meeting Abstracts MA2022-02, no. 36 (October 9, 2022): 1318. http://dx.doi.org/10.1149/ma2022-02361318mtgabs.
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Two-dimensional Transition metal dichalcogenides (TMDCs), have now attracted much attention due to their unique layered structure and physical properties. Up to date, several studies have demonstrated monolayered and few-layered TMDC-based photodetectors with good stability, photo-switching time and broadband detectivity from UV to infrared light region. However, the reported responsivity is not as high as the theoretical expectation, indicating that the light absorption is limited by the atomic thickness of 2D-TMDCs and could still be improved. To overcome the drawback of low absorption in 2D TMDC materials, previous reports have revealed several strategies to enhance the electric field and light-harvesting in these atomically thin TMDC layers by hybridizing plasmonic noble-metal nanoparticles, such as Pt, Au and Ag, to facilitate the light-matter interaction at the surface of semiconductors. In this regard, we aim to combine highly absorptive CuInS2(CIS) nanocrystals with noble metal nanoparticles as the photosensitizer to enhance the intrinsic absorptivity and promote the performance of MoS2-based photodetectors. The interests of noble nanocrystals such as platinum and gold are featured for their distinctive properties of the carrier transportation and the storage when combined with semiconductor materials. The strategy described here acts as a perspective to significantly improve the performance of MoS2-based photodetectors with outstanding detection responsivity with selectable wavelengths by further controlling the size and material of the decorated CIS nanocrystals. In addition to optical sensing, TMDCs have also been developed as a promising candidate for gas-molecule detection. Different from commercial metal oxide gas sensors, TMDCs as sensing materials can be operated at room temperature with good performance, increasing its reliability for future industrial applications. Nevertheless, the relatively low response and long response/recovery time are the main drawbacks of these promising devices. Therefore, we proposed the approach to successfully increase the surface area of TMDCs by a one-step synthesis from WO3 into three-dimensional (3D) WS2 nanowalls through a rapid heating and rapid cooling process. Moreover, the combination of CdS/ZnS or CdSe/ZnS core/shell quantum dots (QDs) with different emission wavelengths and WS2 nanowalls will further improve the performance of WS2-based photodetector devices, including 3.5~4.7 times photocurrent enhancement and shorter response time. The remarkable results of the QD-WS2 hybrid devices to the high non-radiative energy transfer (NRET) efficiency between QDs and our nanostructured material are caused by the spectral overlap between the emission of QDs as the donors and the absorption of WS2 as the acceptors. Additionally, the outstanding NO2 gas-sensing properties of QDs/WS2 devices were demonstrated with a remarkably low detection limit down to 50 ppb with a fast response time of 26.8 s, contributed by tremendous local p-n junctions generated from p-type WS2 nanowalls and n-type CdSe-ZnS QDs in this hybrid system. Our strategies to combine 0D nanoparticles or quantum dots and 2D TMDC materials can significantly enhance the optical sensing and gas molecule sensing properties compared to pristine TMDC-based devices, resulting from the efficient charge or energy transfer between the multi-dimension material system and the creation of local p-n junctions. Moreover, the scalability of these hybrid nanostructures allows our devices to exhibit much more possibilities in advanced multifunctional applications.
Dissertations / Theses on the topic "TMDC materials"
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Plumadore, Ryan. "Study of Two Dimensional Materials by Scanning Probe Microscopy." Thesis, Université d'Ottawa / University of Ottawa, 2019. http://hdl.handle.net/10393/38637.
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This thesis explores structural and electronic properties of layered materials at the nanometre scale. Room temperature and low temperature ultrahigh vacuum scanning probe microscopy (scanning tunneling microscopy, scanning tunneling spectroscopy, atomic force microscopy) is used as the primary characterization method. The main findings in this thesis are: (a) observations of the atomic lattice and imaging local lattice defects of semiconducting ReS2 by scanning tunneling microscopy, (b) measurement of the electronic band gap of ReS2 by scanning tunneling spectroscopy, and (c) scanning tunneling microscopy study of 1T-TaS2 lattice and chemically functionalizing its defects with magnetic molecules.
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Barros, Barbosa Juliana. "Matériaux 2D TMDC pour la génération d'hydrogène par photo-décomposition de l'eau." Thesis, Toulouse 3, 2020. http://www.theses.fr/2020TOU30108.
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Le stockage de l'énergie solaire en énergie chimique est une approche hautement souhaitable pour résoudre le défi énergétique. Les cellules photo-électrochimiques combinent la collecte de l'énergie solaire et la décomposition de l'eau. Les nanofeuillets semiconducteur 2D de di-chalcogenures de métaux de transition (TMDC) sont considérés comme des matériaux attrayants pour l'élaboration de photocatalyseur efficace pour la conversion de l'énergie solaire en hydrogène. Malgré les propriétés optoélectroniques uniques des TMDC, la passivation de défauts de surface présents en concentration élevée est un défi important pour le développement de cette classe de matériaux. Dans ce contexte, le présent travail a concerné l'élaboration d'un photocatalyseur 2D TMDC pour la photo-décomposition de l'eau. Le développement de photocatalyseurs de haute performance a été examiné suivant deux axes principaux. Un premier axe de recherche consiste à passiver les défauts de surface des nanofeuillets 2D p-WSe2 à l'aide de complexes Mo-S pour diminuer la recombinaison des porteurs de charge photo-générés et améliorer l'activité photocatalytique. Nous avons démontré que des couches ultra minces de complexes thio et oxo-thio-Mo moléculaires représentent une classe idéale de catalyseurs, bien adaptée pour fonctionnaliser les matériaux 2D car ils sont stables dans des environnements aqueux, bon marché, respectueux de l'environnement. Des densités de courant de -2 mA cm-2 à -0.2 V par rapport à l'électrode d'hydrogène (NHE) ont été obtenues pour la nouvelle photocathode p-WSe2/ MoxSy. En plus d'offrir une activité électro-catalytique élevée, les films complexes Mo se sont révélés capables de guérir les défauts de surface. Les contributions respectives aux effets catalytiques et cicatrisants observées expérimentalement pour les divers complexes moléculaires de Mo impliquaient la forte adsorption sur les défauts ponctuels du substrat 2D WSe2 de complexes de Mo tels que (MoS4)2-, (MoOS3)2- et (Mo2S6O2)2-. Il a été démontré que ces couches de co-catalyseur Mo-S formés à un pH bien défini présentent un comportement n-semi-conducteur et l'ingénierie des bandes formées avec p-WSe2 s'est révélée appropriée pour assurer la séparation des charges et la migration efficace des électrons photo-induits pour la RDH, représentant un exemple de couche de passivation multi-composant avec de multiples propriétés. Un deuxième axe de travail concerne l'optimisation de la nanostructure du film de WSe2 comme objectif l'obtention d'une surface spécifique élevée et des parois de pores composées de quelques monofeuillets. Des films de WSe2 nanostructurés de haute surface et à bonne collecte de porteurs de charge ont été obtenus par co-assemblage des nanofeuillets de WSe2 et des nanofeuillets d'oxyde de graphène réduit (rGO) avec un rapport de nanofeuillets rGO/WSe2 optimal.[...]Collecting and storing solar energy in chemical energy is a highly desirable approach to solve energy challenge. The great potential of a photoelectrochemical cell technology combines the harvesting of solar energy with the water splitting into a single device. 2D semiconducting nanosheets of Transition Metal Di-Chalcogenides (TMDC) are seen as an attractive material to design an efficient photocatalyst for the conversion of solar energy into hydrogen. Despite the unique optoelectronic properties of the TMDCs, the passivation of surface defects in high concentration is a remaining challenge for the development of this class of materials. In this context, the present work has aimed the elaboration of thin 2D TMDC photocatalyst for solar water splitting. The development of high performance photocatalysts was evaluated following two main axis. A first strategy consists in the surface defects passivation of 2D p-WSe2 nanosheets using Mo-S complexes to decrease the photogenerated charge carrier recombination and improve photocatalytic activity. We demonstrated these Mo thio and oxo-thio- molecular complexes films as an ideal class of catalysts, well-suited to functionalize 2D materials since they are stable in aqueous environments, cheap and environmentally benign. Current densities of -2 mA cm-2 at -0.2 V vs NHE electrode were obtained for the new p-WSe2/MoxSy photocathode. Besides developing high electro-catalytic activity, the Mo complexes films were shown to display ability to heal surface defects. The respective contributions in catalytic and healing effects observed experimentally for the various molecular Mo complexes involved strong adsorption on point defects of the 2D WSe2 substrate of Mo complexes such as (MoS4)2-, (MoOS3)2-and (Mo2S6O2)2-. The Mo complexes films spontaneously formed at well-defined pH were demonstrated to present n-semi-conducting behaviour and band engineering formed with p-WSe2 showed to be suitable for ensuring charge separation and efficient migration of the photo-induced electrons for the Hydrogen Evolution Reaction, thus representing an example of multicomponent passivation layer exhibiting multiple properties. A second strategy focus in the nanostructure optimization of WSe2 with high specific surface area and pore walls composed of few layers. Nanostructured WSe2 films of high surface area and good charge carrier collection were obtained by co-assembling WSe2 nanosheets and reduced graphene oxide (rGO) nanosheets with an optimal rGO/WSe2 nanosheet ratio. After deposition of co-catalyst thin layer, the new layered nanojunctions of rGO-WSe2/MoxSy exhibited photocurrents up to -5 mA cm-2 at -0.2V vs NHE. Incident-photon-to-current efficiency conversion of 10% were achieved for WSe2 nanoflakes of 70 nm thickness in presence of rGO and MoxSy co-catalyst.[...]
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Barrios, pérez María. "Design and computer simulations of 2D MeX2 solid-state nanopores for DNA and protein detection analysis." Thesis, Bourgogne Franche-Comté, 2020. http://www.theses.fr/2020UBFCK003.
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Les membranes nanoporeuses solides [en anglais, SSN (Solid State Nanopore)] sont devenues des dispositifs polyvalents pour l'analyse des biomolécules. L'une des applications les plus prometteuses des SSN est le séquençage de l'ADN et des protéines avec un coût réduit et une vitesse d’exécution plus rapide que les méthodes actuelles de séquençage. Le séquençage par SSN est basé sur la mesure des variations de courant ionique observées quand unebiomolécule, dans un milieu électrolytique, est forcée de traverser de manière séquentielle un nanopore sous l’action d’une différence de potentiel électrique appliquée. Lorsque la biomolécule passe au travers du nanopore, elle occupe de manière transitoire le volume du nanopore et bloque ainsi le passage des ions du milieu électrolytique. Le blocage du courant est dépendant de la nature et de l’encombrement stérique des groupements chimiques des monomères constituant la biomolécule. Donc, la détection ultra-rapide des variations de courant ionique lors du passage de celle-ci au travers du nanopore, peut fournir des informations sur sa séquence. La résolution avec laquelle la séquence peut être déterminée dépend de la taille des nanopores et de l'épaisseur de la membrane. Les matériaux à deux dimensions tels que le graphène et les matériaux dichalcogénures de métaux de transition (MoS2 , WS2, …) sont des candidats très prometteurs pour ledéveloppement des applications de séquençage par SSN. A partir de simulations de dynamique moléculaire (DM) tous atomes, nous avons étudié la faisabilité d'utiliser des SSN de type MoS2 pour le séquençage desprotéines. En premier lieu, nous avons étudié la conductance d’une membrane nanoporeuse de MoS2 de 1 à 5 couches d’épaisseur possédant un seul nanopore de diamètre compris entre 1.0 et 5.0 nm et plongée dans un électrolyte de KCl. Nous avons démontré que le modèle de conductance macroscopique des membranes nanoporeuses cessait d’être valable pour les plus petits nanopores (diamètre < 5 nm). En analysant les simulations de DM des membranes de MoS2, nous avons développé un modèle modifié qui permet d’interpréter les mesures de courant ionique quel que soit le diamètre du nanopore. En second lieu, nous avons simulé le passage de la lysine et du di-lysine, ainsi que d'une protéine modèle, au travers de nanopores de membranes de MoS2, plongées dans un électrolyte de KCl, et soumises à une différence de potentiel électrique. A partir de nos résultats, nous avons proposé que l'utilisation d'acidesaminés chargés positivement ou négativement fixés de manière covalente à une protéine pourrait s’avérer une technique efficace pour favoriser l'entrée des protéines à travers des nanopores dans des expériences de translocation. De plus, nous avons établi la relation entre la trajectoire de la protéine au travers du nanopore et les fluctuations de courant ionique simulées.En troisième lieu, nous avons examiné la conductance ionique de membranes de MoS2 dont les pores ont un diamètre inférieur au nanomètre (sub-nm). Nous avons effectué des simulations de DM de ces systèmes en utilisant le potentiel réactif ReaxFF. Ce potentiel nous a permis de caractériser les variations de la structure atomique de ces très petits pores dans le vide et de simuler la conductance ionique de ce type de membranes. En utilisant le potentiel ReaxFF, des calculs préliminaires de la réactivité des nanopores de membranes de MoS2 à des molécules d’éthanol, utilisées dans le protocole expérimental de la préparation des membranes de MoS2, ont été réalisésSolid-state nanopores (SSN) have emerged as versatile devices for biomolecule analysis. One of the most promising applications of SSN is DNA and protein sequencing, at a low cost and faster than the current standard methods. SSN sequencing is based on the measurement of ionic current variations when a biomolecule embedded in electrolyte is driven through a nanopore under an applied electric potential. As a biomolecule translocates through the nanopore, it occupies the pore volume and blocks the passage of ions. Hence, ultrafast monitoring of ionic flow during the passage of a biomolecule yields information about its structure and chemical properties. The size of the sensing region in SSN is determined by the size and thickness of the pore membrane. Therefore, two-dimensional (2D) transition metal dichalcogenides such as molybdenum disulfide (MoS2) arise as great candidates for SSN applications as an alternative to graphene. In the present work, we investigated the feasibility of using MoS2 nanopores for protein sequencing from all-atom molecular dynamics (MD) simulations. First, we studied the ionic conductance of MoS2 nanoporous membranes by characterizing the KCl electrolyte conductivity through MoS2 nanopores with diameters ranging from 1.0 to 5.0 nm and membranes from single to five-layers. Using MD simulations, we showed the failure of the usual macroscopic model of conductance for the nanoporous membranes with the smallest diameters and developed a modified model which proves usefulness to interpret experimental data. Second, we investigated the threading and translocation of individual lysine residues and a model protein with poly-lysine tags through MoS2 nanopores under the application of an electric potential. A proof-of principle technique based on the use of positively or negatively charged amino acids for protein translocation was proposed to promote the entrance of proteins through SSN in experiments. By analyzing the current-voltage curves simulated, we established the relationship between the translocation sequence events through the nanopores observed at the atomic scale in MD simulations, and the computed current fluctuations. Finally, experimental evidence of ionic conductance measurements in sub-nanometer (sub-nm) pores made of atomic defects has been recently reported. To give a better insight of the ionic transport through atomic scale pores, we performed MD simulations of sub-nm defect MoS2 pores using the reactive potential ReaxFF. Here, we characterized the variations of the atomic structure of the pores in vacuum and then we investigated the ionic conductance performance of one of the MoS2 defect pore membranes. ReaxFF potential was also useful to investigate the possible reactivity of MoS2 defect pore membranes with ethanol molecules. In addition, these simulations might provide a better understanding of the experimental setup of DNA sequencing, in which ethanol plays an unknown role in the sample preparation of the SSN
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Zheng, Husong. "STM Study of Interfaces and Defects in 2D Materials." Diss., Virginia Tech, 2020. http://hdl.handle.net/10919/97440.
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Two-dimensional (2D) materials show novel electronic, optical and chemical properties and have great potential in devices such as field-effect transistors (FET), photodetectors and gas sensors. This thesis focuses on scanning tunneling microscopy and spectroscopy (STM/STS) investigation of interfaces and defects 2D transition metal dichalcogenides (TMDCs).
The first part of the thesis focuses on the synthesis of 2D TiSe2 with chemical vapor transport (CVT). By properly choosing the growth condition, Sub-10 nm TiSe2 flakes were successfully obtained. A 2 × 2 charge density wave (CDW) was clearly observed on these ultrathin flakes by scanning tunneling microscopy (STM). Accurate CDW phase transition temperature was measured by transport measurements. This work opens up a new approach to synthesize TMDCs.
The second part of the thesis focuses on monolayer vacancy islands growing on TiSe2 surface under electrical stressing. We have observed nonlinear area evolution and growth from triangular to hexagonal driven by STM subjected electrical stressing. Our simulations of monolayer island evolution using phase-field modeling and first-principles calculations are in good agreement with our experimental observations. The results could be potentially important for device reliability in systems containing ultrathin TMDCs and related 2D materials subject to electrical stressing.
The third part of the thesis focuses on point defects in 2D PtSe2. We observed five types of distinct defects from STM topography images and measured the local density of states (LDOS) of those defects from scanning tunneling spectroscopy (STS). We identified the types and characteristics of these defects with the first-principles calculations. Our findings would provide critical insight into tuning of carrier mobility, charge carrier relaxation, and electron-hole recombination rates by defect engineering or varying growth condition in few-layer 1T-PtSe2 and other related 2D materials.Doctor of Philosophy
Since the discovery of graphene in 2004, two-dimensional (2D) materials have attracted more and more attentions. When the thickness of a layered material thinned to one or few atoms, it shows interesting properties different from its bulk phase. Due to the reduced dimensionality, interfaces and defects in 2D materials will significantly affect the electronic property and chemical activity. However, such nanometer scale features are several orders of magnitude smaller than the wavelength of visible light, which is the limit of resolution for optical microscope. Scanning tunneling microscope (STM) is widely used in study of 2D materials not only because it can provide the topography and local electronic information at atomic scale, but also because of the possibility of directly fabricate atomic scale structure on the surface. The first part of the thesis focuses on the synthesis of 2D TiSe2 with chemical vapor transport (CVT). TiSe2 belongs to the transition metal dichalcogenides (TMDCs) family, showing a sandwiched layered structure. When the temperature goes down to 200K, a 2 × 2 superlattice called charge density wave (CDW) will show up, which is clearly observed in our STM images. The second part of the thesis focuses on monolayer vacancy islands growing on TiSe2 surface controlled by electrical stressing. During continuous STM scanning, we have observed nonlinear area growth of the vacancy islands. The shape of those islands transfers from triangular to hexagonal. We successfully simulated such growth using phase-field modeling and first-principles calculations. The results could be potentially important for device reliability in systems containing ultrathin TMDCs and related 2D materials subject to electrical stressing. The third part of the thesis focuses on defects in 2D PtSe2. We observed five types of distinct defects in our STM topography images. By comparing them with DFT-calculated simulation images, we identified the types and characteristics of these defects. Our findings would provide critical insight into tuning of carrier mobility, charge carrier relaxation, and electron-hole recombination rates by defect engineering in few-layer 1T-PtSe2 and other related 2D materials.
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De, Sanctis Adolfo. "Manipulating light in two-dimensional layered materials." Thesis, University of Exeter, 2016. http://hdl.handle.net/10871/27414.
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Graphene and layered two-dimensional (2D) materials have set a new paradigm in modern solid-state physics and technology. In particular their exceptional optical and electronic properties have shown great promise for novel applications in light detection. However, several challenges remain to fully exploit such properties in commercial devices. Such challenges include the limited linear dynamic range (LDR) of graphene-based photodetectors (PDs), the efficient extraction of photoexcited charges and ultimately the environmental stability of such atomically-thin materials. In order to overcome the aforementioned limits, novel approaches to tune the properties of graphene and semiconducting \ce{HfS2} are explored in this work, using chemical functionalisation and laser-irradiation. Intercalation of graphene with \ce{FeCl3} is shown to lead to a highly tunable material, with unprecedented stability in ambient conditions. This material is used to define photo-active junctions with an unprecedented LDR via laser-irradiation. Intercalation with \ce{FeCl3} is also used to demonstrate the first all-graphene position-sensitive photodetector (PSD) promising for novel sensing applications. Finally, laser-irradiation is employed, to perform controlled oxidation of ultra-thin \ce{HfS2}, which leads to induced strain in the material and a consequent spatially-varying bandgap. Such structure is used to demonstrate, for the first time, efficient extraction of photogenerated carriers trough the so-called ``charge-funnel'' effect, paving the way to the development of ultra-thin straintronic devices.
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Choukroun, Jean. "Theoretical sStudy of In-plane Heterojunctions of Transition-metal Dichalcogenides and their Applications for Low-power Transistors." Thesis, Université Paris-Saclay (ComUE), 2018. http://www.theses.fr/2018SACLS557/document.
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La miniaturisation des MOSFET a permis une forte diminution des transistors et des puces, ainsi qu’une augmentation exponentielle des capacités de calcul. Cette miniaturisation ne peut néanmoins continuer ainsi: de nos jours, un microprocesseur peut contenir des dizaines de milliards de transistors et la chaleur dégagée par ces composants peut fortement détériorer ses performances. De plus, du fait de leur principe même de fonctionnement, la tension d’alimentation des MOSFET ne peut être réduite sans en impacter les performances. De nouvelles architectures telles que le TFET -basé sur l’effet tunnel bande-à-bande et pouvant fonctionner à des tensions d’alimentation très basses- ainsi que de nouveaux matériaux pourraient donc apporter une alternative au MOSFET silicium. Les monocouches de dichalcogènures de métaux de transitions (TMDs) -des semiconducteurs à bande interdite directe d’environ 1 à 2 eV- possèdent un fort potentiel pour l’électronique et la photonique. De plus, dans le cas de contraintes appropriées, ils peuvent conduire un alignement de bandes présentant un broken-gap; cette configuration permet de surpasser les limites habituelles du TFETs, à savoir de faibles courants dus à l’effet tunnel sur lequel ces dispositifs reposent. Dans ce travail de thèse, des hétérojonctions planaires de TMD sont modélisées via une approche atomistique de liaisons fortes, et une configuration broken-gap est observée dans deux d’entre elles (MoTe2/MoS2 et WTe2/MoS2). Leur potentiel dans le cadre de transistors à effet tunnel (TFETs) est évalué au moyen de simulations de transport quantique basées sur un modèle TB atomistique ainsi que la théorie des fonctions de Green hors-équilibre. Des TFETs type-p et type-n basés sur ces hétérojonctions sont simulés et présentent des courants ON élevés (ION > 103 µA/µm) ainsi que des pentes sous-seuil extrêmement raides (SS < 5 mV/dec) à des tensions d’alimentation très faibles (VDD = 0.3 V). Plusieurs architectures novatrices basées sur ces TFETs et découlant de la nature 2D des matériaux utilisés sont également présentées, et permettent d’atteindre des performances encore plus élevéesNowadays, microprocessors can contain tens of billions of transistors and as a result, heat dissipation and its impact on device performance has increasingly become a hindrance to further scaling. Due to their working mechanism, the power supply of MOSFETs cannot be reduced without deteriorating overall performance, and Si-MOSFETs scaling therefore seems to be reaching its end. New architectures such as the TFET, which can perform at low supply voltages thanks to its reliance on band-to-band tunneling, and new materials could solve this issue. Transition metal dichalcogenide monolayers (TMDs) are 2D semiconductors with direct band gaps ranging from 1 to 2 eV, and therefore hold potential in electronics and photonics. Moreover, when under appropriate strains, their band alignment can result in broken-gap configurations which can circumvent the traditionally low currents observed in TFETs due to the tunneling mechanism they rely upon. In this work, in-plane TMD heterojunctions are investigated using an atomistic tight-binding approach, two of which lead to a broken-gap configuration (MoTe2/MoS2 and WTe2/MoS2). The potential of these heterojunctions for use in tunnel field-effect transistors (TFETs) is evaluated via quantum transport computations based on an atomistic tight-binding model and the non-equilibrium Green’s function theory. Both p-type and n-type TFETs based on these in-plane TMD heterojunctions are shownto yield high ON currents (ION > 103 µA/µm) and extremely low subthreshold swings (SS < 5 mV/dec) at low supply voltages (VDD = 0.3 V). Innovative device architectures allowed by the 2D nature of these materials are also proposed, and shown to enhance performance even further
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Young, Justin R. "Synthesis and Characterization of Novel Two-Dimensional Materials." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1468925594.
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Ma, Yujing. "Two Dimensional Layered Materials and Heterostructures, a Surface Science Investigation and Characterization." Scholar Commons, 2017. http://scholarcommons.usf.edu/etd/7057.
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The isolation of single layers of van der Waals materials has shown that their properties can be significantly different compared to their bulk counterparts. These observations, illustrates the importance of interface interactions for determining the materials properties even in weakly interacting materials and raise the question if materials properties of single layer van der Waals materials can be controlled by appropriate hetero-interfaces. To study interface effects in monolayer systems, surface science techniques, such as photoemission spectroscopy and scanning probe microscopy/spectroscopy, are ideally suited. However, before these characterization methods can be employed, approaches for the synthesis of hetero-van der Waals systems must be developed, preferably in-situ with the characterization methods, i.e. in ultra-high vacuum. Therefore, in this thesis, we explored novel approaches for creating van der Waals heterostructures and characterized fundamental structural and electronic properties of such systems. Specifically, we developed an approach to decouple graphene from a Ir(111) growth substrate by intercalation growth of a 2D-FeO layer, and we investigate van der Waals epitaxy of MoSe2 on graphite and other transition metal dichalcogenide substrates.
For the Ir(111)/2D-FeO/graphene heterostructure system, we first demonstrated the growth of 2D-FeO on Ir(111). The FeO monolayer on Ir(111) exhibits a long range moiré structure indicating the locally varying change of the coordination of the Fe atoms with respect to the substrate Ir atoms. This variation also gives rise to modulations in the Fe2+-O2- separation, and thus in the monolayer dipole. We demonstrated that this structure can be intercalated underneath of graphene grown on Ir(111) by chemical vapor deposition. The modulation of the dipole in the 2D-FeO moiré structure consequently gives rise to a modulated charge doping in the graphene. This effect has been studied by C-1s core level broadening. In general, this study demonstrates that modulated substrates can be used to periodically modify 2D materials.
Growth of transition metal dichalcogenides (TMDCs) by molecular beam epitaxy (MBE) is a very versatile approach for growing TMDC heterostructures. However, there may be unforeseen challenges in the synthesis of some of these materials. Here we show that in MBE growth of MoSe2, the formation of twin grain boundaries is very abundant. While this is detrimental in our efforts for characterizing interface properties of TMDC heterostructures, however the twin grain boundaries have exciting properties. Since the twin grain boundaries are aligned in an epitaxial film we were able to characterize their properties by angle resolved photoemission spectroscopy (ARPES), which may be the first time a material’s line defects could be studied by this method. We demonstrate that the line defects are metallic and exhibit a parabolic dispersing band. Because of the 1D nature of the metallic lines, embedded in a semiconducting matrix, the electronic structure follows a Tomonaga Luttinger formalism and our studies showed strong evidence of the predicted so-called spin charge separation in such 1D electron systems. Moreover, a metal-to-insulator Peierls transition has been observed in this system by scanning tunneling microscopy as well as in transport measurements. Finally, we have shown that the defect network that forms at the surface also lends itself for decoration with metal clusters. Although unexpected, the formation of grain boundary networks in MoSe2 marks the discovery of a new material with exciting quantum properties.
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Zheng, Shan. "Two-dimensional electronics : from material synthesis to device applications." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/284930.
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Two-dimensional (2D) materials have attracted extensive research interest in recent years. Among them, graphene and the semiconducting transition metal dichalcogenides (TMDs) are considered as promising candidates for future device applications due to their unique atomic thickness and outstanding properties. The study on graphene and TMDs has demonstrated great potential to further push the scaling of devices into the sub-10 nanometer regime and enable endless opportunities of novel device architectures for the next generation. In this thesis, crucial challenges facing 2D materials are investigated from material synthesis to electronic applications. A comprehensive review of the direct synthesis of graphene on arbitrary substrates with an emphasis on the metal-catalyst-free synthesis is given, followed by a detailed study of the contact engineering in TMDs with a focus on the strategies to lower the contact resistance. Effective approaches have been demonstrated to solve these issues. These include: (1) metal-catalyst-free synthesis of graphene on various insulating substrates; (2) Fermi level pinning observed in TMDs and integration of graphene contact to lower the contact resistance; and (3) application of metal-insulator-semiconductor (MIS) contact in TMD field-effect transistors (FETs). First, a direct low-temperature synthesis of graphene on insulators without any metal catalysts has been realized. The effects of carbon sources, NH3/H2 concentrations, and insulating substrates on the material synthesis have been systematically investigated. Graphene transistors based on the as-grown material have been fabricated to study the electronic properties, which can further confirm the nitrogen-doped graphene has been synthesized from the electrical characterizations. Then electronic devices focusing on the semiconducting TMDs has been studied. The Fermi level pinning has been observed and studied in WS2 FETs with four metal materials. A novel method of using graphene as an insertion layer between the metal and TMDs has been proven to effectively reduce the contact resistance. Owing to the benefit of tuning the graphene work function via the electric field, the contact resistance can further be reduced. Finally, the effectiveness of MIS contacts in WS2 FETs has been demonstrated. A thickness dependence research has been conducted to find the optimal thickness of the inserted insulator. Moreover, the possible physical mechanism of how this MIS contact reduces the contact resistance in 2D materials has been discussed.
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Hagerty, Phillip. "Physical Vapor Deposition of Materials for Flexible Two Dimensional Electronic Devices." University of Dayton / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1460739765.
Full textBook chapters on the topic "TMDC materials"
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Yadu, Nath V. K., Raghvendra Kumar Mishra, M. S. Neelakandan, Bilahari Aryat, Parvathy Prasad, and Sabu Thomas. "Ultrafast Characterization 2D Semiconducting TMDC for Nanoelectronics Application." In Advanced Polymeric Materials, 263–93. New York: River Publishers, 2022. http://dx.doi.org/10.1201/9781003337041-11.
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Raghuwanshi, Sanjeev Kumar, Santosh Kumar, and Yadvendra Singh. "Recent Trends of Transition-Metal Dichalcogenides (TMDC) Material for SPR Sensors." In 2D Materials for Surface Plasmon Resonance-based Sensors, 209–42. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9781003190738-7.
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Tyagi, Shrestha, Kavita Sharma, Ashwani Kumar, Yogendra K. Gautam, Anil Kumar Malik, and Beer Pal Singh. "Transition Metal Dichalcogenides (TMDs) Nanocomposites-Based Supercapacitors." In Materials Horizons: From Nature to Nanomaterials, 77–101. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-0553-7_3.
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Madkour, Loutfy H. "Carbon Nanomaterials and Two-Dimensional Transition Metal Dichalcogenides (2D TMDCs)." In Advanced Structured Materials, 165–245. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-21621-4_7.
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Naz, Raheela, Tahir Rasheed, Suleman Khan, and Muhammad Bilal. "Nanostructured 2D Transition Metal Dichalcogenides (TMDs) as Electrodes for Supercapacitor." In Nanostructured Materials for Supercapacitors, 319–39. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-99302-3_15.
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Parzuchowski, Halina M., Mark K. Reighard, Kyle W. Hollman, Scott M. Handley, James G. Miller, and Mark R. Holland. "Nondestructive Characterization of TMC Materials: A Correlation Between Advanced Ultrasonic Measurements and Internal Material Conditions." In Review of Progress in Quantitative Nondestructive Evaluation, 1313–20. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-2848-7_168.
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Knochenmuss, R., and H. U. Güdel. "One Dimensional Excitation Energy Transfer in TMMC and Related Compounds." In Organic and Inorganic Low-Dimensional Crystalline Materials, 445–48. New York, NY: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4899-2091-1_57.
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Ao, Zhi Min, and Qing Jiang. "Size Effects on Miscibility and Glass Transition Temperature of PS/TMPC Blend Films: a Simulation and Thermodynamic Approach." In Advances in Composite Materials and Structures, 105–8. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-427-8.105.
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Sridevi, R., and J. Charles Pravin. "Two-Dimensional Transition Metal Dichalcogenide (TMD) Materials in Field-Effect Transistor (FET) Devices for Low Power Applications." In Semiconductor Devices and Technologies for Future Ultra Low Power Electronics, 253–88. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9781003200987-11.
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Mathew, Minu, Sithara Radhakrishnan, and Chandra Sekhar Rout. "Recent Developments in All-Solid-State Micro-Supercapacitors Based on Two-Dimensional Materials." In Nanofibers [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.94535.
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Owing to their unique features such as high surface area, rich electroactive sites, ultrathin thickness, excellent flexibility and mechanical stability and multiple surface functionalities enables outstanding electrochemical response which provides high energy and power density supercapacitors based on them. Also, the Van der Waals gap between layered 2D materials encourages the fast ion transport with shorter ion diffusion path. 2D materials such as MXenes, graphene, TMDs, and 2D metal–organic frame work, TMOs/TMHs materials, have been described with regard to their electrochemical properties for MSCs. We have summarized the recent progress in MSC based on well-developed 2D materials-based electrodes and its potential outcomes with different architectures including interdigitated pattern, stacked MSC and 3D geometries for on-chip electronics. This chapter provides a brief overview of the recent developments in the field of 2D material based all-solid-state microsupercapacitors (MSCs). A brief note on the MSC device configuration and microfabrication methods for the microelectrodes have been discussed. Taking advantage of certain 2D materials such as 2D MXenes, TMDs, TMOs/TMHs that provide good surface chemistry, tunable chemical and physical properties, intercalation, surface modification (functionalization), heterostructures, phase transformations, defect engineering etc. are beneficial for enhancement in pseudocapacitance as it promotes the redox activity.
Conference papers on the topic "TMDC materials"
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Kumar, Vydha Pradeep, and Deepak Kumar Panda. "Simulation Analysis of Different TMDC Materials and their Performances." In 2022 2nd International Conference on Artificial Intelligence and Signal Processing (AISP). IEEE, 2022. http://dx.doi.org/10.1109/aisp53593.2022.9760597.
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Kumar, Vydha Pradeep, and Deepak Kumar Panda. "Simulation Analysis of Different TMDC Materials and their Performances." In 2022 2nd International Conference on Artificial Intelligence and Signal Processing (AISP). IEEE, 2022. http://dx.doi.org/10.1109/aisp53593.2022.9760597.
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Linyou Cao. "Extreme manipulation of light-matter interactions in 2D TMDC materials." In 2016 Progress in Electromagnetic Research Symposium (PIERS). IEEE, 2016. http://dx.doi.org/10.1109/piers.2016.7735444.
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Malko, Anton V. "Energy transfer interactions between semiconductor nanocrystals and TMDC materials (Conference Presentation)." In Synthesis and Photonics of Nanoscale Materials XV, edited by Andrei V. Kabashin, Jan J. Dubowski, David B. Geohegan, and Linyou Cao. SPIE, 2018. http://dx.doi.org/10.1117/12.2295027.
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Indukuri, S. R. K. Chaitanya, Christian Frydendahl, Jonathan Bar-David, Noa Mazurski, and Uriel Levy. "Ultra-small mode volume hyperbolic metamaterial cavity enhanced emission from 2D TMDC materials." In CLEO: QELS_Fundamental Science. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/cleo_qels.2020.ff1b.4.
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Knopf, Heiko, Gia Quyet Ngo, Fatemeh Alsadat Abtahi, Simon Bernet, Antony George, Emad Najafidehaghani, Ziyang Gan, et al. "Enhanced Light-Matter Interaction in TMDC-Materials by Integration in Resonant Layer Architectures." In Frontiers in Optics. Washington, D.C.: OSA, 2021. http://dx.doi.org/10.1364/fio.2021.fm1b.7.
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Indukuri, S. R. K. Chaitanya, Christian Frydendahl, Shahar Edelstein, Noa Mazurski, and Uriel Levy. "Hyperbolic metamaterial nanocavity enhanced photodetector based on 2D TMDC material." In CLEO: QELS_Fundamental Science. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_qels.2022.fth5d.6.
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We design and demonstrate experimentally nanoscale hyperbolic metamaterial cavities for enhancing the optical absorption in photodetector structures made from 2D TMDC materials. This demonstration paves the way for integrating such materials in optoelectronic applications.
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Gundogdu, Kenan. "Carrier dynamics in optically excited Fermi degenerate states in atomically thin TMDC semiconductors (Conference Presentation)." In Physical Chemistry of Semiconductor Materials and Interfaces XVII, edited by Hugo A. Bronstein and Felix Deschler. SPIE, 2018. http://dx.doi.org/10.1117/12.2321206.
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Islam, Arnob, Xia Liu, Bradley Odhner, Mary Anne Tupta, and Philip X. L. Feng. "Investigation of Electrostatic Gating in Two-Dimensional Transitional Metal Dichalcogenide (TMDC) Field Effect Transistors (FETs)." In 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC). IEEE, 2018. http://dx.doi.org/10.1109/nmdc.2018.8605859.
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Chen, C. Y., C. A. Lin, C. L. Yu, H. T. Lin, C. Y. Chang, H. C. Kuo, and M. H. Shih. "Planar Hyperbolic Metamaterials Enhanced Spontaneous Emission of Two-Dimensional Transition Metal Dichalcogenide (TMDC) Atomic Layer." In 2018 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2018. http://dx.doi.org/10.7567/ssdm.2018.ps-5-05.
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