Academic literature on the topic 'Titanium sapphire'

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Journal articles on the topic "Titanium sapphire"

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SARUKURA, NOBUHIKO. "Titanium sapphire laser." Review of Laser Engineering 21, no. 1 (1993): 73–76. http://dx.doi.org/10.2184/lsj.21.73.

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Rapoport, W. R., and Chandra P. Khattak. "Titanium sapphire laser characteristics." Applied Optics 27, no. 13 (July 1, 1988): 2677. http://dx.doi.org/10.1364/ao.27.002677.

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Treviño-Palacios, Carlos Gerardo, Oscar Javier Zapata-Nava, and M. David Iturbe-Castillo. "Hybrid Titanium-Sapphire: Dye laser." Journal of Physics: Conference Series 274 (January 1, 2011): 012075. http://dx.doi.org/10.1088/1742-6596/274/1/012075.

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Hickey, L. M. B., and J. S. Wilkinson. "Titanium diffused waveguides in sapphire." Electronics Letters 32, no. 24 (1996): 2238. http://dx.doi.org/10.1049/el:19961519.

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Jelínková, H., P. Vaněk, P. Valach, K. Hamal, J. Kubelka, V. Škoda, and M. Jelínek. "Pumping of titanium sapphire laser." Czechoslovak Journal of Physics 43, no. 2 (February 1993): 131–38. http://dx.doi.org/10.1007/bf01589636.

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Talyansky, V., S. Choopun, M. J. Downes, R. P. Sharma, T. Venkatesan, Y. X. Li, L. G. Salamanca-Riba, M. C. Wood, R. T. Lareau, and K. A. Jones. "Pulsed laser deposition of titanium nitride films on sapphire." Journal of Materials Research 14, no. 8 (August 1999): 3298–302. http://dx.doi.org/10.1557/jmr.1999.0446.

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We successfully deposited high-quality TiN films on c-plane sapphire by using the pulsed laser deposition technique. TiN grew on sapphire with two in-plane epitaxial relationships: (111)TiN//(0001)sapphire and [101]TiN//[1100]sapphire or (111)TiN// (0001)sapphire and [101]TiN//[1100]sapphire. The TiN unit cell showed a ±30° in-plane rotation for sapphire. The misfit between the TiN film and the sapphire substrate was calculated by using the near coincidence site lattice approach. The deposited films were analyzed by x-ray diffraction, transmission electron microscopy, atomic force microscopy, Rutherford backscattering or channeling spectrometry, electrical, and spectrophotometric measurements. The dependence of the film's crystalline quality on the deposition temperature has been investigated. The full width half-maximum of the rocking curve of the TiN 111 peak was 0.2–0.3°. The minimum ion channeling was 5%, and the room temperature resistivity was as low as 13 μω cm.
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Vu, Doan Thi Anh, Alongkot Fanka, Abhisit Salam, and Chakkaphan Sutthirat. "Variety of Iron Oxide Inclusions in Sapphire from Southern Vietnam: Indication of Environmental Change during Crystallization." Minerals 11, no. 3 (February 26, 2021): 241. http://dx.doi.org/10.3390/min11030241.

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Sapphires from alluvial deposits associated with Cenozoic basalts in Southern Vietnam were collected for investigation of mineral inclusions. In this report, primary iron oxide inclusions were focused on, with detailed mineral chemistry using a Raman spectroscope and electron probe micro-analyzer. Consequently, a variety of iron oxide inclusions were recognized as wüstite, hercynite, and ilmenite. Ilmenite falling within an ilmenite–hematite series ranged in composition between Il24-30He36-38Mt35-40 and Il49-54He34-40Mt7-10, classified as titanomagnetite and titanohematite, respectively. Wüstite with non-stoichiometry, (Fe2+0.3-0.9)(Ti3+<0.179Al3+≤0.6Cr3+<0.1Fe3+≤0.46)☐≤0.23O, was associated with hercynite inclusions, clearly indicating cogenetic sapphire formation. Wüstite and sapphire appear to have been formed from the breakdown reaction of hercynite (hercynite = sapphire+wüstite) within a reduction magma chamber. Titanohematite and titanomagnetite series might have crystallized during iron–titanium reequilibration via subsolidus exsolution under a slightly oxidized cooling process.
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Raymond, T. D., and A. V. Smith. "Injection-seeded titanium-doped-sapphire laser." Optics Letters 16, no. 1 (January 1, 1991): 33. http://dx.doi.org/10.1364/ol.16.000033.

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Fraser, D. J., and M. H. R. Hutchinson. "A high intensity titanium-doped sapphire laser." Journal of Modern Optics 43, no. 5 (May 1996): 1055–62. http://dx.doi.org/10.1080/09500349608233265.

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Bogdanov, B. I., I. G. Markovska, Y. Hristov, and D. P. Georgiev. "Titanium Containing Monocrystals of Ruby and Sapphire." Chemical Engineering & Technology 34, no. 4 (March 2, 2011): 542–44. http://dx.doi.org/10.1002/ceat.201000508.

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Dissertations / Theses on the topic "Titanium sapphire"

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Roth, Peter. "Directly diode-laser-pumped titanium-doped sapphire lasers." Thesis, University of Strathclyde, 2012. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=18125.

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Titanium-doped sapphire is one of the most versatile laser gain materials. Tunable between 0.7 m and 1.1 m and capable of generating femtosecond pulses, the Ti:sapphire laser has become an important tool for many applications. Its ubiquitous use across many scientific disciplines is increasingly complemented by commercial applications including imaging, spectroscopy, micro-processing of materials and the generation of terahertz radiation. However, today's Ti:sapphire lasers are complex, bulky and expensive, leaving many applications unaddressed, particularly where lower costs and smaller footprints are vital. The biggest hurdle to smaller and cheaper Ti:sapphire lasers is the pump light source - typically a frequency-doubled, multi-watt neodymium or optically pumped semiconductor laser. Ideally, such intricate and expensive pump lasers would be replaced by compact, robust and cheap diode lasers. Two factors have prevented this: first, Ti:sapphire has a broad but relati vely weak absorption in the blue-green region of the spectrum where high-power diode lasers are not currently available; and second, the very short upper laser level lifetime of Ti:sapphire and relatively large parasitic losses result in a high intrinsic laser threshold. Combined, these factors strongly favour high-brightness pump sources. The recent progress in diode lasers based on gallium nitride materials now opens the way to challenge the perceived wisdom that Ti:sapphire cannot be diode-pumped. In this work diode-laser pumping of Ti:sapphire lasers has been shown to be possible. The world's first diode-laser-pumped Ti:sapphire laser has been developed, enabling drastic reductions in cost and size over current systems. Using innovative approaches to exploit gallium nitride diode lasers as the pump source, both continuous-wave operation and generation of femtosecond pulses have been demonstrated. As a result, some of the unrivalled performance of today's high-cost, lab- bound Ti: lasers may soon be available at a fraction of the current cost and footprint.
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Russom, Jeffrey Nary. "Optimization of sub-10 femtosecond titanium sapphire lasers." Thesis, Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/77480.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Physics, 2012.
Cataloged from PDF version of thesis.
Includes bibliographical references (p. 105-107).
Kerr-lens mode locked Ti:sapphire lasers are the backbone of most ultrafast and attosecond pulse generation systems. As such when building such systems the experimentalist desires an easy to use and robust system to produce femtosecond pulses for use in experiments. Towards this end I will discuss the issues involved in perfecting Kerr-lens mode locked Ti:sapphire laser technology and present experimental results on a new type of output coupler designed using chirped mirror technology. This new type of output coupler promises improved stability and improved spatial and spectral pulse qualities. In addition I will also discuss the phenomenon of Ince-Gaussian modes, which constitute a more general solution to the paraxial wave equation than the regular Hermite and Laguerre Gaussian solutions. By studying these modes, we hope to discover a relationship between the observed Ince-Gaussian mode patterns in the continuous wave beam of the laser and use this to determine the correct operating alignment for the laser cavity.
by Jeffrey Nary Russom.
S.M.
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Sen, Gourav. "Kyropoulos Growth and Characterizations of Titanium doped Sapphire." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAI001.

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Il y a un énorme intérêt dans la construction de lasers à l'état solide capables d'atteindre les niveaux de petawatt (PW) et au-delà. Afin d'atteindre ce niveau de puissance, des amplificateurs Ti: Al2O3 d'un diamètre maximum de 20 cm ou plus sont nécessaires et il est donc nécessaire de développer des boules de cristaux Ti:Al2O3 de grand diamètre. Le procédé de croissance de Kyropoulos a été identifié par la société RSA le Rubis SA comme la technique la plus productive car elle permet de croître des cristaux massifs sous un faible gradient de température et donc de bonne qualité.La croissance de cristaux pesant environ 30 kg s'accompagne de complications qui affectent gravement la morphologie cristalline et donc sa qualité cristalline. Pour étudier les problèmes de morphologie, une étude détaillée de l'effet des paramètres de croissance a été réalisée en analysant le processus des cristaux cultivés dans l'installation industrielle. Les facteurs pour les problèmes critiques d'une formation de plaque plate et les zones refondues dans le cristal ont été identifiés et un ensemble idéal de paramètre pour le taux de tirage et le taux de croissance de masse a été proposé. Ceux-ci ont conduit à des améliorations marquées dans le volume productif du cristal et ont permis la croissance de cristaux avec des morphologies prévisibles.Pour aller plus loin, un système de croissance cristalline totalement autonome a été envisagé qui permettrait à l'opérateur de surveiller en temps réel la forme du cristal et de contrôler ses paramètres de croissance radiale. Ceci est basé sur la mesure in situ simultanée du poids cristallin et du niveau de liquide restant. Une étude mathématique est présentée pour expliquer la relation entre toutes les forces de pesage agissant sur le cristal en croissance et pour étudier la faisabilité de ce système de contrôle. On montre qu'il pourrait être utile pour la régulation du diamètre pendant la croissance de Kyropoulos.Les cristaux ont été caractérisés et contrôlés pour détecter les défauts qui affecteraient leurs propriétés optiques. Un tel défaut était la présence d'une bande translucide dans le cristal autrement transparent, appelé "défaut laiteux". La qualité cristalline en termes de densité de dislocation due à la déformation induite a été analysée en utilisant des techniques de diffraction des rayons X, ainsi que des caractérisations optiques et des analyses chimiques. Aidé du transfert de chaleur et des simulations numériques thermomécaniques du système de croissance, une explication de l'origine de ce défaut en termes de contrainte thermique agissant et de dynamique de croissance cristalline associée est proposée.Le dopage du titane dans le cristal de saphir est nécessaire pour l'application Laser, mais il y a ségrégation du dopant au cours de la croissance, ce qui conduit à une distribution inhomogène des cristaux développés, comme le montre la caractérisation optique de la distribution du titane dans ses états Ti3 + et Ti4 + . Des idées pour améliorer l'homogénéité des échantillons laser sont proposées
There is a huge interest in construction of solid state lasers capable of reaching petawatt (PW) levels and beyond. In order to achieve this level of power, Ti:Al2O3 amplifiers up to 20 cm in diameter or larger are required and hence there is the need for the growth of large diameter Ti:Al2O3 crystal boules. The Kyropoulos growth process has been identified by the company RSA le Rubis SA as the most productive technique because it allows growing massive crystals under a low temperature gradient and hence of good quality.Growing crystals weighing about 30 kg comes with its share of complications which gravely affect the crystal morphology and hence its crystalline quality. To address the issues of morphology, a detailed study of the growth parameters effect was carried out by analysing the process of crystals grown in the industrial setup. The factors for the critical issues of a flat plate formation and re-melted zones in the crystal were identified and an ideal set of parameter for the pulling rate and mass growth rate was proposed. These led to marked improvements in the productive volume of the crystal and enabled growth of crystals with predictable morphologies.To take a step further, a completely autonomous crystal growth system was envisioned which would allow the operator live monitoring of the crystal shape and give control over its radial growth parameters. This is based on the simultaneous in situ measurement of crystal weight and remaining liquid level. A mathematical study is presented to explain the relationship between all the weighing forces acting on the growing crystal and to study the feasibility of this control system. It is shown that it could be useful for the diameter regulation during the Kyropoulos growth.Crystals were characterised and checked for defects which would affect its optical properties. One such defect was the presence of a translucent band in the otherwise transparent crystal, called “milky defect”. The crystalline quality in terms of dislocation density due to induced strain was analysed using X-ray diffraction techniques, along with optical characterisation and chemical analyses. Aided with heat transfer and thermo-mechanical numerical simulations of the growth system, an explanation for the origin of this defect in terms of acting thermal stress and associated crystal growth dynamics is proposed.Titanium doping in the sapphire crystal is needed for the Laser application, but there is segregation of the dopant during growth and this leads to an inhomogeneous distribution in the grown crystals, as shown by optical characterisation of the distribution of titanium in its Ti3+ and Ti4+ states. Ideas in order to improve the laser samples homogeneity are proposed
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Apostolopoulos, Vasilis. "Gallium and titanium diffused optical waveguide devices in sapphire." Thesis, University of Southampton, 2003. https://eprints.soton.ac.uk/46107/.

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This thesis describes new methods to realise an integrated Ti:Sapphire laser using thermal ionic diffusion. Passive and active waveguides were fabricated by thermal diffusion of gallium and titanium ions in sapphire. and the mode sizes of the waveguides were as small as 1μm at 488nm. A fabrication procedure based on SU-8 photolithography and ion beam milling was developed for micromachining the surface of sapphire. Using this fabrication technique Ga:Sapphire ridge waveguides were fabricated by diffusion of gallium and exhibited mode sizes as small as 2μm at 633nm. Using the same fabrication technique the realisation of the first Ti-diffused sapphire ridge waveguide lasers is reported. Finally, the fabrication of sapphire optical circuits using titanium and gallium co-doping is described and fluorescence characterisation of these waveguides is given.
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Wadsworth, W. J. "Copper vapour laser pumped TI:sapphire lasers." Thesis, University of Oxford, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.389029.

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Pellow-Jarman, Martin Vincent. "Further developments in Fourier transform vibrational spectroscopy." Thesis, University of Southampton, 1994. https://eprints.soton.ac.uk/406870/.

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Mason, Michael Brett. "A sub-50 fs titanium-sapphire chirped pulse amplification laser system." Thesis, Imperial College London, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.326264.

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Shepherd, Sara. "Use and development of a CW titanium sapphire laser for nonlinear optics." Thesis, University of St Andrews, 1994. http://hdl.handle.net/10023/9931.

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A cw titanium sapphire laser pumped by an argon ion laser was used for experiments both in second harmonic generation using a non-linear crystal and for sum-frequency generation in an atomic vapour. In addition the laser was stabilised to sub-MHz levels. Using a crystal of potassium niobate (KNbO₃), the Ti:sapphire laser was frequency doubled over the range 860nm-905nm using an intracavity scheme. The crystal was temperature tuned to achieve near non-critical phase-matching and powers of up to 50mW were obtained, with a constant conversion efficiency per Watt over the doubling range. The thermal properties of potassium niobate in frequency doubling were examined and the effect of the crystal on the ring cavity during temperature tuning was investigated. The laser cavity was frequency stabilised using a 'side of fringe' locking scheme with a confocal Fabry-Perot etalon as the reference discriminator. The cavity length control elements were two Brewster-angled tilt plates and a piezo mounted mirror. Using this scheme the frequency noise was reduced from tens of MHz to 550kHz. Methods of obtaining a 30GHz frequency scan were also evaluated and an experimental 10GHz scan achieved. It was concluded that only dither and lock schemes are good enough to achieve reliable 30GHz scans. Using both a Ti:sapphire laser and a dye laser, two contrasting schemes for sum-frequency generation in sodium vapour were investigated, in which a magnetic field was used to break the symmetry of the medium. Using one of these resonantly enhanced routes, powers of 17μW in the UV were obtained from a classically 'forbidden' quadrupole transition. The effects of phase-matching on each of the transitions was examined in detail, and it was found that in general there are at least six factors which affect the phase-matching behaviour of the frequency mixing scheme. It was also found that on the route which had two sources of dispersion there was a significant distortion of the output line profiles at high temperatures due to a variation in phase-matching across the line profile itself.
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Abend, Stefan. "Ultrafast dynamics of chlorins and porphyrins in proteins and solution investigated by time resolved three pulse photon echo spectroscopy." Thesis, Imperial College London, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.249371.

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McGonigle, A. J. S. "Tunable UV lasers." Thesis, University of Oxford, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343230.

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Books on the topic "Titanium sapphire"

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Moulton, Peter F. Titanium-doped sapphire laser research and design study. Hampton, Va: Langley Research Center, 1987.

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Rines, Glen A. Development of lasers optimized for pumping Ti:A12O3 lasers. Hampton, Va: Langley Research Center, 1994.

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Zhan, Xiaowei. High resolution photoacoustic titanium: Sapphire/dye ring laser spectrometer and its application to acetylene overtone spectrum. Helsinki: Suomalainen Tiedeakatemia, 1993.

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United States. National Aeronautics and Space Administration. Scientific and Technical Information Office., ed. Titanium-doped sapphire laser research and design study. [Washington, DC]: National Aeronautics and Space Administration, Scientific and Technical Information Office, 1987.

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United States. National Aeronautics and Space Administration. Scientific and Technical Information Office., ed. Titanium-doped sapphire laser research and design study. [Washington, DC]: National Aeronautics and Space Administration, Scientific and Technical Information Office, 1987.

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United States. National Aeronautics and Space Administration., ed. Development of a Ti:Al₂O₃ laser for remote sensing of the atmosphere: Final report. [Washington, DC: National Aeronautics and Space Administration, 1998.

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Book chapters on the topic "Titanium sapphire"

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Renk, Karl F. "Titanium–Sapphire Laser." In Basics of Laser Physics, 75–80. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-23565-8_5.

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Renk, Karl F. "Titanium–Sapphire Laser." In Basics of Laser Physics, 77–82. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-50651-7_5.

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Yao, Jianquan, and Yuye Wang. "Tunable Titanium Doped Sapphire (Ti:Sapphire) Laser." In Springer Series in Optical Sciences, 545–642. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22789-9_9.

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Lacovara, P., and L. Esterowitz. "Flashlamp-Pumped Titanium-Doped Sapphire Laser." In Springer Series in Optical Sciences, 240–41. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-540-47433-3_32.

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Kafka, J. D., A. J. Alfrey, and T. Baer. "Mode-Locked Continuous Wave Titanium Sapphire Laser." In Ultrafast Phenomena VI, 64–66. Berlin, Heidelberg: Springer Berlin Heidelberg, 1988. http://dx.doi.org/10.1007/978-3-642-83644-2_19.

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Gremillard, Laurent, Eduardo Saiz, and Antoni P. Tomsia. "Wetting in the Tin-Silver-Titanium/Sapphire System." In Ceramic Transactions Series, 121–28. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2012. http://dx.doi.org/10.1002/9781118406038.ch15.

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Alfrey, Anthony J., Mark S. Keirstead, and Timothy H. Gray. "Realization of a Practical CW Titanium Sapphire Laser." In Laser/Optoelektronik in der Technik / Laser/Optoelectronics in Engineering, 145–48. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-48372-1_27.

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Macfarlane, R. M., and W. Lenth. "Spectral Holeburning in Titanium-Doped Sapphire and YAG." In Springer Series in Optical Sciences, 14–18. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-540-47433-3_3.

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French, P. M. W., J. A. R. Williams, and J. R. Taylor. "Femtosecond Pulse Generation from a Titanium-Doped Sapphire Laser." In Springer Proceedings in Physics, 47–51. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-75826-3_8.

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Nakagawa, Tsubasa, Isao Sakaguchi, Naoya Shibata, K. Matsunaga, Teruyasu Mizoguchi, Takahisa Yamamoto, Hajime Haneda, and Yuichi Ikuhara. "Direct Measurement of Titanium Pipe Diffusion Coefficients in Sapphire." In Materials Science Forum, 939–42. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-443-x.939.

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Conference papers on the topic "Titanium sapphire"

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DeShazer, L. G., G. F. Albrecht, and J. F. Seamans. "Tunable Titanium Sapphire Lasers." In O-E/LASE'86 Symp (January 1986, Los Angeles), edited by William W. Simmons. SPIE, 1986. http://dx.doi.org/10.1117/12.961175.

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Hickey, L. M. B. "Titanium Diffused Waveguides in Sapphire." In Proceedings of European Meeting on Lasers and Electro-Optics. IEEE, 1996. http://dx.doi.org/10.1109/cleoe.1996.562607.

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Kokta, M. "Growth of Titanium Doped Sapphire." In Advanced Solid State Lasers. Washington, D.C.: OSA, 1985. http://dx.doi.org/10.1364/assl.1985.thb4.

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DeShazer, L. G., K. W. Kangas, R. Route, and R. S. Feigelson. "Tunable Titanium Doped Sapphire Fiber Laser." In O-E/Fibers '87, edited by Paul Klocek. SPIE, 1987. http://dx.doi.org/10.1117/12.968223.

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Craig, Bruce B. "Techniques for mode-locking titanium sapphire." In Recent Advances in the Uses of Light in Physics, Chemistry, Engineering, and Medicine. SPIE, 1992. http://dx.doi.org/10.1117/12.2322286.

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Lacovara, P., and L. Eaterowitz. "Flashlamp-Pgmped Titanium-Doped Sapphire Laser." In Advanced Solid State Lasers. Washington, D.C.: OSA, 1986. http://dx.doi.org/10.1364/assl.1986.tha12.

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Kersale, Y., N. Boubekeur, J. G. Hartnett, M. E. Tobar, N. Bazin, and V. Giordano. "Titanium doped cryogenic sapphire resonator oscillators." In 2005 IEEE International Frequency Control Symposium and Exhibition. IEEE, 2005. http://dx.doi.org/10.1109/freq.2005.1573960.

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Bidin, Noriah, Faizani Mohd Noor, Abd Rahman Tamuri, Abdul Manaf Hashim, and Vijay K. Arora. "Characteristic of Femtosecond Titanium Sapphire Oscillator." In ENABLING SCIENCE AND NANOTECHNOLOGY: 2010 International Conference On Enabling Science And Nanotechnology Escinano2010. AIP, 2011. http://dx.doi.org/10.1063/1.3586998.

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Craig, Bruce B. "Techniques for mode-locking titanium sapphire." In New York - DL tentative, edited by Daniel L. Akins and Robert R. Alfano. SPIE, 1992. http://dx.doi.org/10.1117/12.56697.

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LACOVARA, PHILIP, LEON ESTEROWITZ, and ROGER ALLEN. "High-efficiency flashlamp-pumped titanium: sapphire laser." In Conference on Lasers and Electro-Optics. Washington, D.C.: OSA, 1985. http://dx.doi.org/10.1364/cleo.1985.the3.

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Reports on the topic "Titanium sapphire"

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Lacovara, Philip, Leon Esterowitz, and Roger Allen. High Efficiency Flashlamp-Pumped Titanium: Sapphire Laser. Fort Belvoir, VA: Defense Technical Information Center, January 1989. http://dx.doi.org/10.21236/ada217598.

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McDuff, Odis P. Development of a Tunable Mode-Locked Titanium Sapphire Laser. Fort Belvoir, VA: Defense Technical Information Center, November 1995. http://dx.doi.org/10.21236/ada303043.

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Taylor, Seth Thomas. Grain boundary structure and solute segregation in titanium-doped sapphire bicrystals. Office of Scientific and Technical Information (OSTI), January 2002. http://dx.doi.org/10.2172/799622.

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Schenck, Craig C. Final Report: Ultra Fast Regeneratively Amplified Titanium Sapphire Laser System, April 1, 1995 - March 31, 1997. Office of Scientific and Technical Information (OSTI), March 1997. http://dx.doi.org/10.2172/765652.

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