Relevant bibliographies by topics / Titanium doped sapphire

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Titanium doped sapphire'

Author: Grafiati
Published: 4 June 2021
Last updated: 12 February 2022

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Journal articles on the topic "Titanium doped sapphire"

1

Raymond, T. D., and A. V. Smith. "Injection-seeded titanium-doped-sapphire laser." Optics Letters 16, no. 1 (January 1, 1991): 33. http://dx.doi.org/10.1364/ol.16.000033.

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Fraser, D. J., and M. H. R. Hutchinson. "A high intensity titanium-doped sapphire laser." Journal of Modern Optics 43, no. 5 (May 1996): 1055–62. http://dx.doi.org/10.1080/09500349608233265.

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Xiao, S. Q., D. A. Phillips, and A. H. Heuer. "New titanium oxide precipitates in Ti-doped sapphire." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 954–55. http://dx.doi.org/10.1017/s0424820100150605.

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When Ti-doped α-Al2O3 single crystals are annealed at 1400°C, needle-like rutile TiO2 precipitates form on the basal plane of α-Al2O3 and cause the asterism in star sapphire. Tetragonal rutile has a = 0.459 nm and c = 0.296 nm, and has the following orientation relationship with the α-Al2O3 matrix: (100)r // (0001)s and <011>r // <100>s, where the subscripts r and s refer to the rutile and sapphire, respectively. Moon and Phillips studied the precipitation in natural blue sapphire containing both Fe and Ti. They found that rutile precipitates formed after annealing at 1350°C but an orthorhombic α-TiO2 precipitate formed after annealing at 1150°C. In this study, Ti-doped α-Al2O3 single crystals were annealed at 1300°C. TEM specimens were prepared with their plane normals parallel to <110>s, <100>s and <0001>s, respectively, and ion beam thinned to electron transparency.Three different types of precipitates are present in the α-Al2O3 matrix. The first is the needlelike rutile precipitate lying on (0001)s, with the needle axes parallel to <100>s.
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Lacovara, P., L. Esterowitz, and M. Kokta. "Growth, spectroscopy, and lasing of titanium-doped sapphire." IEEE Journal of Quantum Electronics 21, no. 10 (October 1985): 1614–18. http://dx.doi.org/10.1109/jqe.1985.1072563.

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Kiriyama, Hiromitsu, Alexander S. Pirozhkov, Mamiko Nishiuchi, Yuji Fukuda, Akito Sagisaka, Akira Kon, Yasuhiro Miyasaka, et al. "Petawatt Femtosecond Laser Pulses from Titanium-Doped Sapphire Crystal." Crystals 10, no. 9 (September 3, 2020): 783. http://dx.doi.org/10.3390/cryst10090783.

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Ultra-high intensity femtosecond lasers have now become excellent scientific tools for the study of extreme material states in small-scale laboratory settings. The invention of chirped-pulse amplification (CPA) combined with titanium-doped sapphire (Ti:sapphire) crystals have enabled realization of such lasers. The pursuit of ultra-high intensity science and applications is driving worldwide development of new capabilities. A petawatt (PW = 1015 W), femtosecond (fs = 10−15 s), repetitive (0.1 Hz), high beam quality J-KAREN-P (Japan Kansai Advanced Relativistic ENgineering Petawatt) Ti:sapphire CPA laser has been recently constructed and used for accelerating charged particles (ions and electrons) and generating coherent and incoherent ultra-short-pulse, high-energy photon (X-ray) radiation. Ultra-high intensities of 1022 W/cm2 with high temporal contrast of 10−12 and a minimal number of pre-pulses on target has been demonstrated with the J-KAREN-P laser. Here, worldwide ultra-high intensity laser development is summarized, the output performance and spatiotemporal quality improvement of the J-KAREN-P laser are described, and some experimental results are briefly introduced.
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Brockman, Philip, Clayton H. Bair, James C. Barnes, Robert V. Hess, and Edward V. Browell. "Pulsed injection control of a titanium-doped sapphire laser." Optics Letters 11, no. 11 (November 1, 1986): 712. http://dx.doi.org/10.1364/ol.11.000712.

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Nazarenko, P. N., N. V. Okladnikov, and G. A. Skripko. "Nonlinear refraction in sapphire crystals doped with trivalent titanium." Journal of Applied Spectroscopy 55, no. 1 (July 1991): 722–27. http://dx.doi.org/10.1007/bf00661730.

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Alombert-Goget, Guillaume, Yannick Guyot, Abdeldjelil Nehari, Omar Benamara, Nicholas Blanchard, Alain Brenier, Nicolas Barthalay, and Kheirreddine Lebbou. "Scattering defect in large diameter titanium-doped sapphire crystals grown by the Kyropoulos technique." CrystEngComm 20, no. 4 (2018): 412–19. http://dx.doi.org/10.1039/c7ce02004j.

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DeShazer, L. G., K. W. Kangas, and J. M. Eggleston. "Saturation of green absorption in titanium-doped sapphire laser crystals." Optics Letters 13, no. 5 (May 1, 1988): 363. http://dx.doi.org/10.1364/ol.13.000363.

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Bussière, B., O. Utéza, N. Sanner, M. Sentis, G. Riboulet, L. Vigroux, M. Commandré, F. Wagner, J. Y. Natoli, and J. P. Chambaret. "Bulk laser-induced damage threshold of titanium-doped sapphire crystals." Applied Optics 51, no. 32 (November 9, 2012): 7826. http://dx.doi.org/10.1364/ao.51.007826.

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Dissertations / Theses on the topic "Titanium doped sapphire"

1

Roth, Peter. "Directly diode-laser-pumped titanium-doped sapphire lasers." Thesis, University of Strathclyde, 2012. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=18125.

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Titanium-doped sapphire is one of the most versatile laser gain materials. Tunable between 0.7 m and 1.1 m and capable of generating femtosecond pulses, the Ti:sapphire laser has become an important tool for many applications. Its ubiquitous use across many scientific disciplines is increasingly complemented by commercial applications including imaging, spectroscopy, micro-processing of materials and the generation of terahertz radiation. However, today's Ti:sapphire lasers are complex, bulky and expensive, leaving many applications unaddressed, particularly where lower costs and smaller footprints are vital. The biggest hurdle to smaller and cheaper Ti:sapphire lasers is the pump light source - typically a frequency-doubled, multi-watt neodymium or optically pumped semiconductor laser. Ideally, such intricate and expensive pump lasers would be replaced by compact, robust and cheap diode lasers. Two factors have prevented this: first, Ti:sapphire has a broad but relati vely weak absorption in the blue-green region of the spectrum where high-power diode lasers are not currently available; and second, the very short upper laser level lifetime of Ti:sapphire and relatively large parasitic losses result in a high intrinsic laser threshold. Combined, these factors strongly favour high-brightness pump sources. The recent progress in diode lasers based on gallium nitride materials now opens the way to challenge the perceived wisdom that Ti:sapphire cannot be diode-pumped. In this work diode-laser pumping of Ti:sapphire lasers has been shown to be possible. The world's first diode-laser-pumped Ti:sapphire laser has been developed, enabling drastic reductions in cost and size over current systems. Using innovative approaches to exploit gallium nitride diode lasers as the pump source, both continuous-wave operation and generation of femtosecond pulses have been demonstrated. As a result, some of the unrivalled performance of today's high-cost, lab- bound Ti: lasers may soon be available at a fraction of the current cost and footprint.
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Sen, Gourav. "Kyropoulos Growth and Characterizations of Titanium doped Sapphire." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAI001.

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Il y a un énorme intérêt dans la construction de lasers à l'état solide capables d'atteindre les niveaux de petawatt (PW) et au-delà. Afin d'atteindre ce niveau de puissance, des amplificateurs Ti: Al2O3 d'un diamètre maximum de 20 cm ou plus sont nécessaires et il est donc nécessaire de développer des boules de cristaux Ti:Al2O3 de grand diamètre. Le procédé de croissance de Kyropoulos a été identifié par la société RSA le Rubis SA comme la technique la plus productive car elle permet de croître des cristaux massifs sous un faible gradient de température et donc de bonne qualité.La croissance de cristaux pesant environ 30 kg s'accompagne de complications qui affectent gravement la morphologie cristalline et donc sa qualité cristalline. Pour étudier les problèmes de morphologie, une étude détaillée de l'effet des paramètres de croissance a été réalisée en analysant le processus des cristaux cultivés dans l'installation industrielle. Les facteurs pour les problèmes critiques d'une formation de plaque plate et les zones refondues dans le cristal ont été identifiés et un ensemble idéal de paramètre pour le taux de tirage et le taux de croissance de masse a été proposé. Ceux-ci ont conduit à des améliorations marquées dans le volume productif du cristal et ont permis la croissance de cristaux avec des morphologies prévisibles.Pour aller plus loin, un système de croissance cristalline totalement autonome a été envisagé qui permettrait à l'opérateur de surveiller en temps réel la forme du cristal et de contrôler ses paramètres de croissance radiale. Ceci est basé sur la mesure in situ simultanée du poids cristallin et du niveau de liquide restant. Une étude mathématique est présentée pour expliquer la relation entre toutes les forces de pesage agissant sur le cristal en croissance et pour étudier la faisabilité de ce système de contrôle. On montre qu'il pourrait être utile pour la régulation du diamètre pendant la croissance de Kyropoulos.Les cristaux ont été caractérisés et contrôlés pour détecter les défauts qui affecteraient leurs propriétés optiques. Un tel défaut était la présence d'une bande translucide dans le cristal autrement transparent, appelé "défaut laiteux". La qualité cristalline en termes de densité de dislocation due à la déformation induite a été analysée en utilisant des techniques de diffraction des rayons X, ainsi que des caractérisations optiques et des analyses chimiques. Aidé du transfert de chaleur et des simulations numériques thermomécaniques du système de croissance, une explication de l'origine de ce défaut en termes de contrainte thermique agissant et de dynamique de croissance cristalline associée est proposée.Le dopage du titane dans le cristal de saphir est nécessaire pour l'application Laser, mais il y a ségrégation du dopant au cours de la croissance, ce qui conduit à une distribution inhomogène des cristaux développés, comme le montre la caractérisation optique de la distribution du titane dans ses états Ti3 + et Ti4 + . Des idées pour améliorer l'homogénéité des échantillons laser sont proposées
There is a huge interest in construction of solid state lasers capable of reaching petawatt (PW) levels and beyond. In order to achieve this level of power, Ti:Al2O3 amplifiers up to 20 cm in diameter or larger are required and hence there is the need for the growth of large diameter Ti:Al2O3 crystal boules. The Kyropoulos growth process has been identified by the company RSA le Rubis SA as the most productive technique because it allows growing massive crystals under a low temperature gradient and hence of good quality.Growing crystals weighing about 30 kg comes with its share of complications which gravely affect the crystal morphology and hence its crystalline quality. To address the issues of morphology, a detailed study of the growth parameters effect was carried out by analysing the process of crystals grown in the industrial setup. The factors for the critical issues of a flat plate formation and re-melted zones in the crystal were identified and an ideal set of parameter for the pulling rate and mass growth rate was proposed. These led to marked improvements in the productive volume of the crystal and enabled growth of crystals with predictable morphologies.To take a step further, a completely autonomous crystal growth system was envisioned which would allow the operator live monitoring of the crystal shape and give control over its radial growth parameters. This is based on the simultaneous in situ measurement of crystal weight and remaining liquid level. A mathematical study is presented to explain the relationship between all the weighing forces acting on the growing crystal and to study the feasibility of this control system. It is shown that it could be useful for the diameter regulation during the Kyropoulos growth.Crystals were characterised and checked for defects which would affect its optical properties. One such defect was the presence of a translucent band in the otherwise transparent crystal, called “milky defect”. The crystalline quality in terms of dislocation density due to induced strain was analysed using X-ray diffraction techniques, along with optical characterisation and chemical analyses. Aided with heat transfer and thermo-mechanical numerical simulations of the growth system, an explanation for the origin of this defect in terms of acting thermal stress and associated crystal growth dynamics is proposed.Titanium doping in the sapphire crystal is needed for the Laser application, but there is segregation of the dopant during growth and this leads to an inhomogeneous distribution in the grown crystals, as shown by optical characterisation of the distribution of titanium in its Ti3+ and Ti4+ states. Ideas in order to improve the laser samples homogeneity are proposed
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Wadsworth, W. J. "Copper vapour laser pumped TI:sapphire lasers." Thesis, University of Oxford, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.389029.

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Li, Hui. "Bubbles propagation in undoped and Titanium (Ti3+)-doped sapphire crystals grown by Czochralski (Cz) technique." Thesis, Lyon 1, 2014. http://www.theses.fr/2014LYO10327/document.

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En dépit de leurs simplicités chimiques, de leurs fusion congruente, de leurs performances mécaniques et de leurs propriétés optiques, les monocristaux de saphir contiennent comme défauts des bulles aussi connus sous le nom de micro-vides. Quelle que soit la technologie de croissance, les cristaux obtenus sont caractérisés par la présence de micro-et macro-bulles qui affectent leurs qualités optiques et mécaniques limitant ainsi leurs applications. Ces bulles dégradent les propriétés optiques et l'efficacité des lasers produits par une réduction de la transparence des saphirs; elles induisent également des défauts de surface pendant le processus de polissage. Afin d'améliorer la qualité des cristaux, il est important d'éliminer les bulles, de connaître la raison de leurs formations, les causes de leurs propagations, de leurs constitutions, et de leurs diffusions dans le cristal. Nous avons étudié la distribution des bulles et leurs tailles dans les cristaux de saphir non dopés et dopés titane obtenus par la technique Czochralski (Cz). Les données expérimentales recueillies ont permis de connaître l'effet de différents paramètres de croissance sur la distribution, la densité et la taille des bulles. La propagation des bulles et leurs distributions dans les cristaux ne sont pas influencées par le type de germe. Si les vitesses de tirages augmentent, le diamètre des bulles diminuent et leurs densités augmentent. Les bulles formées dans le cristal de saphir sont influencées par la matière formant la charge de départ. L’utilisation de saphirs craquelés comme charge de départ pourrait être une bonne façon de minimiser la création de bulles et de limiter leurs propagations. Les résultats obtenus dans le cadre de cette thèse décrivent l'ensemble des phénomènes impliqués lors de l'incorporation de bulles dans les cristaux de saphir non dopés et dopés titane
In spite of the chemical simplicity, the congruent melt behaviour and it’s performed mechanical and optical properties sapphire single crystals contain bubbles defects also known as micro-voids. Whatever the growth technology, the grown crystals are characterized by the presence of micro and macro bubbles which affect the optical and mechanical quality of the crystal limiting their application. They degrade the optical properties and the laser efficiency by reduction of the transparency; they also induce surface defects during substrate polishing process. In order to improve the crystal quality, it is important to eliminate bubbles defects and know the reason of their formation, the causes of their propagation, their incorporation and their distribution in the crystal. We have studied bubbles distribution and their size in undoped and Ti-doped sapphire crystals grown by Czochralski (Cz) technique. The collected experimental data made it possible to know the effect of several growth parameters on the distribution, the density and the size of the bubbles. The bubbles propagation and distribution in the crystal are not influenced by the seed type. If the pulling rate increases, the diameter of bubbles decreases and their density increases. The bubbles formed in sapphire crystal are influenced by the starting charge material. Using sapphire crackle as starting charge could be a good way to minimise bubbles creation and limited their propagation. The obtained results in the frame of this thesis describe the whole phenomena involved during bubbles incorporation in undoped and Ti-doped sapphire crystals
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Da, silva Antonio. "Theoretical determination of optical properties for sapphire doped with titanium from its microscopy and analysis of its capabilities for laser without population inversion." Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLX075/document.

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Cet exposé est scindé en deux grandes parties. Dans la première, nous estimons des constantes photo-physiques du saphir dopé au titane à partir d'un modèle analytique simple exploitant une théorie de Huang-Rhys pour la détermination du profil spectral des bandes simples et une hypothèse réaliste de superposition de ces dernières. Nous déterminons une formule pour l'indice de réfraction total du Ti:saphir en fonction de la concentration de dopant. Dans une seconde partie, nous évaluons, selon la vérification d'un concept, la capacité de laser sana inversion de populations pour un cristal dopé possédant une basse symétrie. Nous appuyons notre démonstration en établissant une condition de seuil généralisée d'effet laser. Ce concept pourrait être une rupture technologique dans le domaine des grands cristaux dopés et n'a pas encore été investigué par la communauté
This presentation is split into two main parts. In the first, we estimate photo-physical constants of titanium doped sapphire from a simple analytical model using a Huang-Rhys theory for the determination of the spectral profile of simple bands and from a realistic hypothesis of superposition of the latter. We define a formula for the total refractive index of Ti:sapphire as a function of dopant concentration. In a second part, we evaluate, according to the verification of a concept, the laser capability without population inversion for a doped crystal with low symmetry. We support our demonstration by establishing a generalized laser threshold condition. This concept would be a technological breakthrough in the field of large doped crystals and has not yet been investigated by the community
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Books on the topic "Titanium doped sapphire"

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Moulton, Peter F. Titanium-doped sapphire laser research and design study. Hampton, Va: Langley Research Center, 1987.

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United States. National Aeronautics and Space Administration. Scientific and Technical Information Office., ed. Titanium-doped sapphire laser research and design study. [Washington, DC]: National Aeronautics and Space Administration, Scientific and Technical Information Office, 1987.

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United States. National Aeronautics and Space Administration. Scientific and Technical Information Office., ed. Titanium-doped sapphire laser research and design study. [Washington, DC]: National Aeronautics and Space Administration, Scientific and Technical Information Office, 1987.

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Book chapters on the topic "Titanium doped sapphire"

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Yao, Jianquan, and Yuye Wang. "Tunable Titanium Doped Sapphire (Ti:Sapphire) Laser." In Springer Series in Optical Sciences, 545–642. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22789-9_9.

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Lacovara, P., and L. Esterowitz. "Flashlamp-Pumped Titanium-Doped Sapphire Laser." In Springer Series in Optical Sciences, 240–41. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-540-47433-3_32.

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Macfarlane, R. M., and W. Lenth. "Spectral Holeburning in Titanium-Doped Sapphire and YAG." In Springer Series in Optical Sciences, 14–18. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-540-47433-3_3.

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French, P. M. W., J. A. R. Williams, and J. R. Taylor. "Femtosecond Pulse Generation from a Titanium-Doped Sapphire Laser." In Springer Proceedings in Physics, 47–51. Berlin, Heidelberg: Springer Berlin Heidelberg, 1990. http://dx.doi.org/10.1007/978-3-642-75826-3_8.

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Byvik, C. E., A. M. Buoncristiani, S. J. McMurray, and M. Kokta. "Optical and Mass Spectroscopic Analyses of Titanium-Doped Sapphire Crystals." In Springer Series in Optical Sciences, 242–46. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-540-47433-3_33.

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Bair, C. H., P. Brockman, J. C. Barnes, R. V. Hess, and E. V. Browell. "Injection-Controlled Titanium-Doped Sapphire Laser Using a Pulsed Dye Laser." In Springer Series in Optical Sciences, 247–50. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-540-47433-3_34.

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Buoncristiani, M., C. E. Byvik, and J. C. Barnes. "Temperature Dependence of the Fluorescence Lineshape and Lifetime of Titanium-Doped Sapphire." In Spectroscopy of Solid-State Laser-Type Materials, 572. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-0899-7_39.

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Kokta, M. R. "Effects of Growth Conditions and Post-Growth Thermal Treatment on the Quality of Titanium-Doped Sapphire." In Springer Series in Optical Sciences, 89–93. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-540-47433-3_11.

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Azoui, Hanane, Abdellah Laidoune, Djamel Haddad, and Derradji Bahloul. "Heat and Mass Transfer in the Growth of Titanium Doped Sapphire Material with the μ-PD Technique." In Lecture Notes in Mechanical Engineering, 523–33. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-41468-3_44.

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Conference papers on the topic "Titanium doped sapphire"

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Kokta, M. "Growth of Titanium Doped Sapphire." In Advanced Solid State Lasers. Washington, D.C.: OSA, 1985. http://dx.doi.org/10.1364/assl.1985.thb4.

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DeShazer, L. G., K. W. Kangas, R. Route, and R. S. Feigelson. "Tunable Titanium Doped Sapphire Fiber Laser." In O-E/Fibers '87, edited by Paul Klocek. SPIE, 1987. http://dx.doi.org/10.1117/12.968223.

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Lacovara, P., and L. Eaterowitz. "Flashlamp-Pgmped Titanium-Doped Sapphire Laser." In Advanced Solid State Lasers. Washington, D.C.: OSA, 1986. http://dx.doi.org/10.1364/assl.1986.tha12.

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Kersale, Y., N. Boubekeur, J. G. Hartnett, M. E. Tobar, N. Bazin, and V. Giordano. "Titanium doped cryogenic sapphire resonator oscillators." In 2005 IEEE International Frequency Control Symposium and Exhibition. IEEE, 2005. http://dx.doi.org/10.1109/freq.2005.1573960.

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Macfarlane, R. M., and W. Lenth. "SPECTRAL HOLE BURNING IN TITANIUM DOPED SAPPHIRE AND YAG." In Advanced Solid State Lasers. Washington, D.C.: OSA, 1986. http://dx.doi.org/10.1364/assl.1986.wa4.

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Lacovara, Philip, and Leon Esterowitz. "High-average-power operation of flashlamp-pumped titanium-doped sapphire." In Conference on Lasers and Electro-Optics. Washington, D.C.: OSA, 1986. http://dx.doi.org/10.1364/cleo.1986.tuk27.

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Byvik, C. E., A. M. Buoncristiani, and M. Kokta. "Optical and Mass Spectroscopic Analysis of Titanium doped Sapphire Crystals." In Advanced Solid State Lasers. Washington, D.C.: OSA, 1986. http://dx.doi.org/10.1364/assl.1986.tha13.

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Bair, Clayton H., Philip Brockman, James C. Barnes, Robert V. Hess, and Edward V. Browell. "Injection Controlled Titanium Doped Sapphire Laser Using a Pulsed Dye Laser." In Advanced Solid State Lasers. Washington, D.C.: OSA, 1986. http://dx.doi.org/10.1364/assl.1986.tha14.

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Roberts, L. F., J. J. Swetits, and A. M. Buoncristiani. "A mathematical model of the dynamics of titanium doped Sapphire lasers." In ADVANCES IN LASER SCIENCE−IV. AIP, 1989. http://dx.doi.org/10.1063/1.38570.

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Bussière, B., O. Utéza, N. Sanner, M. Sentis, G. Riboulet, L. Vigroux, M. Commandré, F. Wagner, J. Y. Natoli, and J. P. Chambaret. "Laser induced damage of sapphire and titanium doped sapphire crystals under femtosecond to nanosecond laser irradiation." In Laser Damage Symposium XLI: Annual Symposium on Optical Materials for High Power Lasers, edited by Gregory J. Exarhos, Vitaly E. Gruzdev, Detlev Ristau, M. J. Soileau, and Christopher J. Stolz. SPIE, 2009. http://dx.doi.org/10.1117/12.836191.

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Reports on the topic "Titanium doped sapphire"

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Taylor, Seth Thomas. Grain boundary structure and solute segregation in titanium-doped sapphire bicrystals. Office of Scientific and Technical Information (OSTI), January 2002. http://dx.doi.org/10.2172/799622.

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