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Relevant bibliographies by topics / Titanium Carbide Thin Films

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Academic literature on the topic 'Titanium Carbide Thin Films'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 September 2023

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Journal articles on the topic "Titanium Carbide Thin Films"

1

Kadlec, Jaromir, Z. Joska, Z. Pokorny, M. Jelinek, and T. Kocourek. "Hybrid Deposition of Titanium Carbide Thin Films." ECS Transactions 32, no. 1 (December 17, 2019): 73–77. http://dx.doi.org/10.1149/1.3641842.

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Georgiev, G., N. Feschiev, D. Popov, and Z. Uzunov. "Titanium carbide thin films obtained by reactive magnetron sputtering." Vacuum 36, no. 10 (October 1986): 595–97. http://dx.doi.org/10.1016/0042-207x(86)90327-1.

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Dev, Vishnu. "Lithium intercalation studies in cubic titanium carbide thin films." Applied Surface Science 449 (August 2018): 537–41. http://dx.doi.org/10.1016/j.apsusc.2018.01.284.

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Halim, Joseph, Maria R. Lukatskaya, Kevin M. Cook, Jun Lu, Cole R. Smith, Lars-Åke Näslund, Steven J. May, et al. "Transparent Conductive Two-Dimensional Titanium Carbide Epitaxial Thin Films." Chemistry of Materials 26, no. 7 (March 19, 2014): 2374–81. http://dx.doi.org/10.1021/cm500641a.

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Gheriani, R., and Rachid Halimi. "Effect of Heat Treatments on the Structural and Mechanical Properties of Ti Thin Films Deposited on Steel Substrates by PVD Method." Defect and Diffusion Forum 297-301 (April 2010): 88–92. http://dx.doi.org/10.4028/www.scientific.net/ddf.297-301.88.

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Titanium carbides are well known materials with great scientific and technological interest. The applications of these materials take advantage of the fact that they are very hard, refractory and that they have metallic properties. In this work, we have studied the influence of the heat treatment temperatures (400-1000°C) on the interaction between the titanium thin films and steel substrates. Steel substrates, 100C6 type (AFNOR norms) containing approximately 1 wt % of carbon were coated at 200°C with titanium thin films by magnetron sputtering. The samples were characterized by X-ray diffraction (XRD) and Auger electron spectroscopy (AES). Vikers micro-hardness measurements carried out on the annealed samples showed that the micro-hardness increases with annealing temperature, reaches a maximum (3500 kg/mm2), then decreases progressively. The growth of micro-hardness is due to the diffusion of the carbon, and to the formation of titanium carbide. However, the decrease of micro-hardness is associated with the diffusion of iron and the formation of iron oxide (Fe2O3). At higher temperatures, we note the formation of titanium dioxide (TiO2).

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Adams, P. M., and G. Radhakrishnan. "Microstructure of Pulsed-Laser Deposited Titanium Carbide Thin Films Grown for Tribological Applications." Microscopy and Microanalysis 7, S2 (August 2001): 1238–39. http://dx.doi.org/10.1017/s1431927600032268.

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The carbides and nitrides of transition metals, are excellent candidates for hard coatings for tribological applications. Recently a novel pulsed laser deposition (PLD) technique has been developed for the room temperature growth of particulate free titanium carbide (TiC) coatings on bearing steels. On a completely different scale from ball bearing applications, moving microelectricalmechanical systems (MEMS) face issues of limited lifetime as a result of rapid wear of the silicon components. The integration of hard tribological coatings into moving MEMS structures should greatly increase the functional lifetime of these devices. The same PLD technique has been used to deposit TiC thin film onto MEMS test structures consisting of multilayer coatings on Si substrates, and patterned 3-D Si substrates. This procedure for growing TiC appears to be compatible with conventional MEMS fabrication procedures.

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Fonseca, Alexandre F., Tao Liang, Difan Zhang, Kamal Choudhary, Simon R. Phillpot, and Susan B. Sinnott. "Titanium-Carbide Formation at Defective Curved Graphene-Titanium Interfaces." MRS Advances 3, no. 8-9 (2018): 457–62. http://dx.doi.org/10.1557/adv.2018.115.

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ABSTRACTPhysical and chemical properties of graphene-metal interfaces have been largely examined with the objective of producing nanostructured carbon-based electronic devices. Although electronic properties are key to such devices, appropriate structural, thermal and mechanical properties are important for device performance as well. One of the most studied is the graphene-titanium (G-Ti) interface. Titanium is a low density, high strength versatile metal that can form alloys with desirable properties for applications ranging from aerospace to medicine. Small clusters and thin films of titanium deposited on graphene have also been examined. However, while some experiments show that thin films of titanium on graphene can be removed without damaging graphene hexagonal structure, others reported the formation of titanium-carbide (TiC) at G-Ti interfaces. In a previous work [ACS Appl. Mater. Interfaces, 2017, 9 (38), pp 33288-33297], we have shown that pristine G-Ti interfaces are resilient to large thermal fluctuations even when G-Ti structures lie on curved or kinked substrates. Here, using classical molecular dynamics with the third-generation Charge Optimized Many Body (COMB3) potential, we show that di-interstitial defective G-Ti structures on a copper substrate with a relatively large curvature kink, present signs of TiC formation. This result might help explain the different experimental results mentioned above.

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Chaddha, A. K., J. D. Parsons, J. Wu, H‐S Chen, D. A. Roberts, and H. Hockenhull. "Chemical vapor deposition of silicon carbide thin films on titanium carbide, using 1,3 disilacyclobutane." Applied Physics Letters 62, no. 24 (June 14, 1993): 3097–98. http://dx.doi.org/10.1063/1.109147.

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9

Scandurra, Roberto, Anna Scotto d’Abusco, and Giovanni Longo. "A Review of the Effect of a Nanostructured Thin Film Formed by Titanium Carbide and Titanium Oxides Clustered around Carbon in Graphitic Form on Osseointegration." Nanomaterials 10, no. 6 (June 24, 2020): 1233. http://dx.doi.org/10.3390/nano10061233.

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Improving the biocompatibility of implants is an extremely important step towards improving their quality. In this review, we recount the technological and biological process for coating implants with thin films enriched in titanium carbide (TiC), which provide improved cell growth and osseointegration. At first, we discuss the use of a Pulsed Laser Ablation Deposition, which produced films with a good biocompatibility, cellular stimulation and osseointegration. We then describe how Ion Plating Plasma Assisted technology could be used to produce a nanostructured layer composed by graphitic carbon, whose biocompatibility is enhanced by titanium oxides and titanium carbide. In both cases, the nanostructured coating was compact and strongly bound to the bulk titanium, thus particularly useful to protect implants from the harsh oxidizing environment of biological tissues. The morphology and chemistry of the nanostructured coating were particularly desirable for osteoblasts, resulting in improved proliferation and differentiation. The cellular adhesion to the TiC-coated substrates was much stronger than to uncoated surfaces, and the number of philopodia and lamellipodia developed by the cells grown on the TiC-coated samples was higher. Finally, tests performed on rabbits confirmed in vivo that the osseointegration process of the TiC-coated implants is more efficient than that of uncoated titanium implants.

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Gheriani, R., and Raouf Mechiakh. "Effect of Manganese on Titanium Thin Films Adhesion Deposited on Steel Substrates." Defect and Diffusion Forum 326-328 (April 2012): 583–86. http://dx.doi.org/10.4028/www.scientific.net/ddf.326-328.583.

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The mainly property of thin solid films technologies is their adhesion to the substrates. Because of its good wear resistance and its low coefficient of friction against steel, TiC is an attractive coating material for wear applications such as bearing components. The adhesion of TiC coatings, however suffers from insufficient reproducibility, which is probably due to uncontrolled process parameters. In our work pure titanium thin films of approximately 0.6 µm in thickness were prepared on 100C6 stainless steel substrates by cathodic sputtering. The samples were subjected to secondary vacuum annealing at a temperature between 400 and 1000°C for 30 min. The reaction between substrates and thin films was characterized using an x-ray diffractometer (XRD). Surface morphology and elements diffusion evaluations were carried out by scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS). The interaction substrates-thin films is accompanied by nucleation and growth of titanium carbide as a function of annealing temperature. By the SEM and EDS results, it appears clearly that the diffusion of manganese to the external layers leads to the destruction of adhesion especially at high temperatures.

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Dissertations / Theses on the topic "Titanium Carbide Thin Films"

1

Dedigamuwa, Gayan S. "Formation of nanocoatings by laser-assisted spray pyrolysis and laser ablation on 2d gold nanotemplates." [Tampa, Fla.] : University of South Florida, 2005. http://purl.fcla.edu/fcla/etd/SFE0001205.

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Guest, Andrew John. "Precursors for doped boron carbide thin films." Thesis, University of Salford, 2010. http://usir.salford.ac.uk/26700/.

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This Thesis is concerned with the development of high yield synthetic strategies to phosphaboranes and phosphacarboranes. These compounds have attracted attention due to their potential as single-source precursors for the deposition of thin films of doped boron carbide via plasma enhanced chemical vapour deposition. It has shown that suitable doping of the boron carbide can lead to wide band gap semiconductors and incorporation of phosphorus into the cage structure of the solid-state material is one way of achieving this aim. Chapter one discusses the chemical vapour deposition of boron carbide and goes on to describe its uses as neutron detectors and semiconductors. Chapter two presents the existing methods used for the synthesis of aminophosphines and highlights the importance of two such species, PH(NBus2)2 and PCl2N(CJln)2 . The remaining chapters cover the experimental work used for the preparation of phosphaboranes and phosphacarboranes that contain the phosphorus atom as a vertex. Chapter three focuses on the reaction of bis(dialkylamino)phosphines with decaborane and describes the synthesis of the nido-[l-nido-?^\o\\\2\ anion in high yield. In Chapter four, the use of the nido-[l-PB}oH\2\ anion to prepare a range of cluster complexes via reaction with a variety of electrophiles is discussed. Chapter five focuses on the reaction of bis(dialkylamino)phosphines with nido-5,6- dicarbadecaborane(12) and describes the synthesis of novel compounds of the formulae 6,9-R2NHP-5,6-C2 Bs Hn, (R = Pr', Bu1 ). This is considered as an intermediate product which subsequently gives a mixture of the nit/<>-7,8,\ 1- PC2B8Hn, mWo-[7,8,9-PC;>BxHio]~ and /m/o-[7,8,l 1-PC:B8 H IO ] species whose ratio is dependant on the R group. Each chapter contains a brief introduction, discusses the results obtained including multinuclear NMR spectroscopy and crystal structure data and concludes with an experimental section.

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Wilhelmsson, Ola. "Synthesis and Characterization of Ternary Carbide Thin Films." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis Acta Universitatis Upsaliensis, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-8265.

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Tengstrand, Olof. "Transition metal carbide nanocomposite and amorphous thin films." Doctoral thesis, Linköpings universitet, Tunnfilmsfysik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-104929.

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This thesis explores thin films of binary and ternary transition metal carbides, in the Nb-C, Ti-Si-C, Nb-Si-C, Zr-Si-C, and Nb-Ge-C systems. The electrical and mechanical properties of these systems are affected by their structure and here both nanocomposite and amorphous thin films are thus investigated. By appropriate choice of transition metal and composition the films can be designed to be multifunctional with a combination of properties, such as low electric resistivity, low contact resistance and high mechanical strength. Electrical contacts are one example of application that has been of special interest in this thesis. Since some industrially important substrates used in electrical contacts soften at higher temperature, all films were deposited with dc magnetron sputtering at a low substrate temperature (200-350 °C). I show that the electrical resistivity and mechanical properties of composites consisting of nanocrystalline NbC grains (nc-NbC) in a matrix of amorphous C (a-C) depend strongly on the amount of amorphous C. The best combination of hardness (23 GPa) and electrical resistivity (260 μΩ*cm) are found in films with ~15 at.% a-C phase. This is a higher hardness and lower resistivity than measured for the more well studied Ti-C system if deposited under similar conditions. The better results can be explained by a thinner matrix of amorphous C phase in the case of NbC. The nc-NbC/a-C is therefore interesting as a material in electrical contacts. Si can be added to further control the structure and thereby the properties of binary Me-C systems. There are however, different opinions in the literature of whether Si is incorporated on the Ti or C site in the cubic NaCl (B1) structure of TiC. In order to understand how Si is incorporated in a Me-Si-C material I use a model system of epitaxial TiCx (x ~0.7). In this model system a few atomic percent of Si can be incorporated in the cubic TiC structure. The experimental results together with theoretical stability calculations suggest that the Si is positioned at the C sites forming Ti(Si,C)x. The calculation further shows a strong tendency for Si segregation, which is seen at higher Si contents in the experiments, where Si starts segregate out from the TiCx to the grain boundaries causing a loss of epitaxy. If Si is added to an Nb-C nanocomposite, it hinders the grain growth and thus a reduced size of the NbC grains is observed. The Si segregates to the amorphous matrix forming a-SiC. At the same time the resistivity increases and the hardness is reduced. With even higher amounts of Si (>25 at.%) into the Nb-Si-C material, grain growth is no longer possible and the material becomes amorphous. In order to separate between effects from the addition of Si and the choice of transition metal I compare the Nb-Si-C system to already published results for the Zr-Si-C system. I find that the hardness of the material depends on the amount of strong Si-C bonds rather than the type of transition metal. The reduced elastic modulus is, however, dependent on the choice of transition metal. I therefore suggest that it is possible to make Me-Si-C films with high wear resistance by an appropriate choice of transition metal and composition. Electron microscopy was of importance for determining amorphous structures of Nb-Si-C and Zr-Si-C at high Si contents. However, the investigations were obstructed by electron beam induced crystallization. Further investigations show that the energy transferred from the beam electrons to C and Si atoms in the material is enough to cause atomic displacements. The displacements cause volume fluctuations and thereby enhance the mobility of all the atoms in the material. The result is formation of MeC grains, which are stable to further irradiation. Finally, I have studied substitution of Ge for Si in a ternary system looking at Nb-Ge-C thin films. I show that the films consist of nc-NbC/a-C/a-Ge and that Ge in a similar way to Si decreases the size of the crystalline NbC grains. However, a transition to a completely amorphous material is not seen even at high Ge contents (~30 at.%). Another dissimilarity is that while Si bonds to C and forms a matrix of a-SiC, Ge tends to bond to Ge.

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Deva, Reddy Jayadeep. "Mechanical properties of Silicon Carbide (SiC) thin films." [Tampa, Fla] : University of South Florida, 2008. http://purl.fcla.edu/usf/dc/et/SFE0002615.

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6

Scabarozi, Theodore H. Jr Barsoum M. W. "Combinatorial investigation of nanolaminate ternary carbide thin films /." Philadelphia, Pa. : Drexel University, 2009. http://hdl.handle.net/1860/3189.

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Deva, Reddy Jayadeep. "Mechanical Properties of Silicon Carbide (SiC) Thin Films." Scholar Commons, 2007. https://scholarcommons.usf.edu/etd/210.

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There is a technological need for hard thin films with high elastic modulus. Silicon Carbide (SiC) fulfills such requirements with a variety of applications in high temperature and MEMS devices. A detailed study of SiC thin films mechanical properties was performed by means of nanoindentation. The report is on the comparative studies of the mechanical properties of epitaxially grown cubic (3C) single crystalline and polycrystalline SiC thin films on Si substrates. The thickness of both the Single and polycrystalline SiC samples were around 1-2 µm. Under indentation loads below 500 µ-Newton both films exhibit Elastic contact without plastic deformation. Based on the nanoindentation results polycrystalline SiC thin films have an elastic modulus and hardness of 422 plus or minus 16 GPa and 32.69 plus or minus 3.218 GPa respectively, while single crystalline SiC films elastic modulus and hardness of 410 plus or minus 3.18 Gpa and 30 plus or minus 2.8 Gpa respectively. Fracture toughness experiments were also carried out using the nanoindentation technique and values were measured to be 1.48 plus or minus 0.6 GPa for polycrystalline SiC and 1.58 plus or minus 0.5 GPa for single crystal SiC, respectively. These results show that both polycrystalline SiC thin films and single crystal SiC more or less have similar properties. Hence both single crystal and polycrystalline SiC thin films have the capability of becoming strong contenders for MEMS applications, as well as hard and protective coatings for cutting tools and coatings for MEMS devices.

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8

Tan, Keng Ean. "Quantum mechanical modelling of refractory transition metal carbide films." Thesis, University of Oxford, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.294188.

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Folkenant, Matilda. "Synthesis and Characterization of Amorphous Carbide-based Thin Films." Doctoral thesis, Uppsala universitet, Oorganisk kemi, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-247282.

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In this thesis, research on synthesis, structure and characterization of amorphous carbide-based thin films is presented. Crystalline and nanocomposite carbide films can exhibit properties such as high electrical conductivity, high hardness and low friction and wear. These properties are in many cases structure-related, and thus, within this thesis a special focus is put on how the amorphous structure influences the material properties. Thin films within the Zr-Si-C and Cr-C-based systems have been synthesized by magnetron sputtering from elemental targets. For the Zr-Si-C system, completely amorphous films were obtained for silicon contents of 20 at.% or higher. Modeling of these films, as well as experimental results suggest that the films exhibit a network-type structure where the bond types influence the material properties. Higher hardness and resistivity were observed with high amounts of covalent Si-C bonds. Several studies were performed in the Cr-C-based systems. Cr-C films deposited in a wide composition range and with substrate temperatures of up to 500 °C were found to be amorphous nanocomposites, consisting of amorphous chromium carbide (a-CrCx) and amorphous carbon (a-C) phases. The carbon content in the carbidic phase was determined to about 30-35 at.% for most films. The properties of the Cr-C films were very dependent of the amount of a-C phase, and both hardness and electrical resistivity decreased with increasing a-C contents. However, electrochemical analysis showed that Cr-C films deposited at higher substrate temperature and with high carbon content exhibited very high oxidation resistance. In addition, nanocomposite films containing Ag nanoparticles within an amorphous Cr-C matrix were studied in an attempt to improve the tribological properties. No such improvements were observed but the films exhibited a better contact resistance than the corresponding binary Cr-C films. Furthermore, electrochemical analyses showed that Ag nanoparticles on the surface affected the formation of a stable passive film, which would make the Cr-C/Ag films less resilient to oxidation than the pure Cr-C films.

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Lai, Chung-Chuan. "Phase Formation of Nanolaminated Transition Metal Carbide Thin Films." Doctoral thesis, Linköpings universitet, Tunnfilmsfysik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-137367.

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Research on inherently nanolaminated transition metal carbides is inspired by their unique properties combining metals and ceramics, such as higher damage tolerance, better machinability and lower brittleness compared to the binary counterparts, yet retaining the metallic conductivity. The interesting properties are related to their laminated structure, composed of transition-metalcarbide layers interleaved by non-transition-metal (carbide) layers. These materials in thin-film form are particularly interesting for potential applications such as protective coatings and electrical contacts. The goal of this work is to explore nanolaminated transition metal carbides from the aspects of phase formation and crystal growth during thin-film synthesis. This was realized by studying phases in select material systems synthesized from two major approaches, namely, fromdirect-deposition and post-deposition treatment. The first approach was used in studies on the Mo-Ga-C and Zr-Al-C systems. In the former system, intriguing properties have been predicted for the 3D phases and their 2D derivatives (socalled MXenes), while in the latter system, the phases are interesting for nuclear applications. In this work, the discovery of a new Mo-based nanolaminated ternary carbide, Mo2Ga2C, is evidenced from thin-film and bulk processes. Its structure was determined using theoretical and experimental techniques, showing that Mo2Ga2C has Ga double-layers in simple hexagonal stacking between adjacent Mo2C layers, and therefore is structurally very similar to Mo2GaC, except for the additional Ga layers. For the Zr-Al-C system, the optimization of phase composition and structure of Zr2Al3C4 in a thin-film deposition process was studied by evaluating the effect of deposition parameters. I concluded that the formation of Zr2Al3C4 is favored with a plasma flux overstoichiometric in Al, and with a minimum lattice-mismatch to the substrates. Consequently, epitaxial Zr2Al3C4 thin film of high quality were deposited on 4H-SiC(001) substrates at 800 °C. With the approach of post-deposition treatment, the studies were focused on a new method of thermally-induced selective substitution reaction of Au for the non-transition-metal layers in nanolaminated carbides. Here, the reaction mechanism has been explored in Al-containing (Ti2AlC and Ti3AlC2) and Ga-containing (Mo2GaC and Mo2Ga2C) phases. The Al and Ga in these phases were selectively replaced by Au while the carbide layers remained intact, resulting in the formation of new layered phases, Ti2Au2C, Ti3Au2C2, Mo2AuC, and Mo2(Au1-xGax)2C, respectively. The substitution reaction was explained by fast outward diffusion of the Al or Ga being attracted to the surface Au, in combination with back-filling of Au, which is chemically inert to the carbide layers,to the vacancies. The substitution reaction was further applied to Ga-containing nanolaminated carbides, (Cr0.5Mn0.5)2GaC and Mo2GaC, motivated by development of novel magnetic nanolaminates. The former experiment resulted in the formation of (Cr0.5Mn0.5)2AuC, where the retained (Cr0.5Mn0.5)2C layers allowed a comparative study on the magnetic properties under the exchange of Ga for Au. After Au substitution, reduction in the Curie temperature and the saturation magnetization were observed, showing a weakened magnetic exchange interaction of the magnetic (Cr0.5Mn0.5)2 Clayers across the Au. In the Mo2GaC case, an Fe-containing MAX phase, Mo2AC with 50 at.% of Fe on the A site, was synthesized through selective substitution of Au-Fe alloy for the Ga layers, showing the first direct evidence for Fe in the MAX-phase structure. The substitution of Fe did not take place on another Mo2GaC sample tested for Fe exchange only, indicating the essential role of Au in catalyzing the Fe-substitution reaction. The knowledge gained from this thesis work contributes to improved approaches for attaining thin films of nanolaminated transition metal carbides with desired phase composition and crystal quality. The reports on the new nanolaminated phases through exchange interactions are likely to expand the family of nanolaminated carbides and advance their properties, and trigger more studies on related (quasi-) 2D materials.

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Books on the topic "Titanium Carbide Thin Films"

1

Sloof, Willem Gerrit. Internal stresses and microstructure of layer/substrate assemblies: Analysis of TiC and TiN coatings chemically vapour deposited on various substrates. Delft, Netherlands: Delft University Press, 1996.

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B, Bergmann Ralf, and Research Signpost (Trivandrum India), eds. Growth, characterization, and electronic applications of si-based thin films. Trivandrum: Research Signpost, 2002.

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Symposium C on Properties and Applications of SiC, Natural and Synthetic Diamond and Related Materials (1990 Strasbourg, France). SiC, natural and synthetic diamond and related materials: Proceedings of Symposium C on Properties and Applications of SiC, Natural and Synthetic Diamond and Related Materials of the 1990 E-MRS Fall conference, Strasbourg, France, November 27-30, 1990. Amsterdam: North-Holland, 1992.

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Kandasamy, Ispran S. Metalorganic chemical vapour deposited titanium dioxide thin films. Uxbridge: Brunel University, 1988.

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United States. National Aeronautics and Space Administration., ed. Properties of thin films for high temperature flow sensors: Final report for the period ended August 20, 1990. [Washington, DC: National Aeronautics and Space Administration, 1991.

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United States. National Aeronautics and Space Administration., ed. Properties of thin films for high temperature flow sensors: Final report for the period ended August 20, 1990. [Washington, DC: National Aeronautics and Space Administration, 1991.

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Amorphous silicon carbide thin films: Deposition, characterization, etching, and piezoresistive sensors applications. Hauppauge, N.Y: Nova Science Publishers, 2011.

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Zakrzewska, Katarzyna. Titanium dioxide thin films for gas sensors and photonic applications. Kraków: AGH, Uczelniane Wydawnictwa Nauk.-Dydaktyczne, 2003.

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Kaczmarek, Danuta. Modyfikacja wybranych właściwości cienkich warstw TiO₂. Wrocław: Oficyna Wydawnicza Politechniki Wrocławskiej, 2008.

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Kaczmarek, Danuta. Modyfikacja wybranych właściwości cienkich warstw TiO₂. Wrocław: Oficyna Wydawnicza Politechniki Wrocławskiej, 2008.

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Book chapters on the topic "Titanium Carbide Thin Films"

1

De Maria, G., D. Ferro, S. Barinov, L. D. Alessio, and R. Teghil. "Hardness of Titanium Carbide Thin Films Deposited on Silicon by Laser Ablation." In Fracture Mechanics of Ceramics, 457–67. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4757-4019-6_35.

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Salles, Pol, David Pinto, Kanit Hantanasirisakul, Kathleen Maleski, Christopher E. Shuck, and Yury Gogotsi. "Electrochromic Effect in Titanium Carbide MXene Thin Films Produced by Dip-Coating." In MXenes, 281–302. New York: Jenny Stanford Publishing, 2023. http://dx.doi.org/10.1201/9781003306511-14.

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Williams, Wendell S. "Short Range Order in “Amorphous” Thin Films of Titanium Diboride." In The Physics and Chemistry of Carbides, Nitrides and Borides, 671–76. Dordrecht: Springer Netherlands, 1990. http://dx.doi.org/10.1007/978-94-009-2101-6_38.

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Lindner, J. K. N. "Formation of SiC Thin Films by Ion Beam Synthesis." In Silicon Carbide, 251–77. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-642-18870-1_11.

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Bosi, Matteo, Marco Negri, and Giovanni Attolini. "Cubic Silicon Carbide Thin Films Deposition." In New Frontiers in Nanochemistry, 149–54. Includes bibliographical references and indexes. | Contents: Volume 1. Structural nanochemistry – Volume 2. Topological nanochemistry – Volume 3. Sustainable nanochemistry.: Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429022944-11.

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Conde, O., J. C. Oliveira, P. Paiva, and M. N. Oliveira. "Boron Carbide Thin Films Prepared by CO2 Laser Assisted Chemical Vapour Deposition." In Protective Coatings and Thin Films, 99–109. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5644-8_9.

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Vaz, F., L. Rebouta, M. F. Silva, and J. C. Soares. "Thermal Oxidation of Ternary and Quaternary Nitrides of Titanium, Aluminium and Silicon." In Protective Coatings and Thin Films, 501–10. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5644-8_40.

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Vassilevski, Konstantin V., I. Nikitina, A. B. Horsfall, Nicolas G. Wright, C. Mark Johnson, Rajesh Kumar Malhan, and Tetsuya Yamamoto. "Structural Properties of Titanium-Nickel Films on Silicon Carbide Following High Temperature Annealing." In Silicon Carbide and Related Materials 2005, 871–74. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.871.

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Miyauchi, Masahiro, and Hiromasa Tokudome. "Synthesis and Applications of Titanium Oxide Nanotube Thin Films." In Topics in Applied Physics, 45–57. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-03622-4_4.

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Pan, W. S., and A. J. Steckl. "Mechanisms in Reactive Ion Etching of Silicon Carbide Thin Films." In Springer Proceedings in Physics, 217–23. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-75048-9_43.

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Conference papers on the topic "Titanium Carbide Thin Films"

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LUPU, A., S. ORLANDUCCI, M. L. TERRANOVA, G. PALLESCHI, and D. COMPAGNONE. "TITANIUM CARBIDE THIN-FILMS AS A NEW ELECTRODE MATERIAL FOR ELECTROCHEMICAL SENSORS." In Proceedings of the 8th Italian Conference. WORLD SCIENTIFIC, 2004. http://dx.doi.org/10.1142/9789812702944_0040.

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Sonoda, T., A. Watazu, J. Zhu, W. Shi, A. Kamiya, K. Kato, and T. Asahina. "Enhanced Industrial Applicability of Aluminum Alloy by Coating Technique With Titanium/Carbon Compositionally Gradient Film Using Magnetron Co-Sputtering." In ASME 2002 International Mechanical Engineering Congress and Exposition. ASMEDC, 2002. http://dx.doi.org/10.1115/imece2002-39382.

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Coating of Aluminium alloy substrates with Ti/C compositionally gradient films was examined by magnetron sputtering, in order to improve not only the abrasion resistance of the alloy but also the adhesion between the deposited film and the alloy substrate with preserving the high hardness of such ceramic coatings. The Ti/C compositionally gradient films were deposited by co-sputtering of 2 sputter cathodes which had a pure titanium target and a titanium carbide target respectively, and their compositionally gradient was realized by varying continuously the electric power supplied to each sputter cathode. Under visual observation, the obtained Ti/C compositionally gradient films appeared to be uniform and adhesive. According to AES in-depth profiles, the carbon (C) concentration in the film gradually decreased in depth direction from trhe surface toward the substrate, confirming that a Ti/C compositionally gradient film had formed on the alloy substrate. On the basis of XRD, it was found that titanium carbide and α-titanium phases were formed in the gradient film. Furthermore the Vickers hardness of the film reached over Hv=2600. Therefore the abrasion resistance of the alloy and the adhesion of the hard coatings were expected to be improved by this method.

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Hanada, Yoshiyuki, Yuji Yamamoto, Hidemi Nakai, and Katsuhisa Enjouji. "New software for evaluating optical constants of absorbing films." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1988. http://dx.doi.org/10.1364/oam.1988.waa5.

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The optical constant evaluation technique for absorbing films has been newly developed. This technique can handle absorbing films, which are used for solar controlling films, with sufficient accuracy. In this technique, we assumed that the absorbing film has a double-layer structure. For example, a stainless steel film is assumed that consists of a metal layer and a surface oxidized layer, and this is supported by the surface analysis using SIMS. The advantage of this technique is that it can evaluate not only complex refractive indices but also thicknesses of metal (nitride) and surface oxidized layers. Another advantage is that only spectrophotometer and monochromatic ellipsometer measurements are necessary to calculate the optical constants in a wide range of wavelength. The optical constants of various film materials such as stainless steel, chromium, titanium nitride, silicon carbide, and so on were obtained using this technique. The errors are small enough so that optical properties of the multilayers for solar controlling films can be predicted with sufficient accuracy. For example, the spectral reflectance of a two-layer system (air/titanium nitride/stainless steel/glass) which was evaluated from those optical constants agreed well with measured values within a 3% error.

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Polychronopoulou, Kyriaki, Claus Rebholz, Nicholaos G. Demas, Andreas A. Polycarpou, Lefki Theodorou, and Klaus Bo¨bel. "Microstructure, Mechanical and Tribological Properties of Reactive Magnetron Sputtered Titanium Carbide Coatings." In ASME/STLE 2007 International Joint Tribology Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ijtc2007-44457.

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This study describes the correlation between the microstructure, mechanical and tribological properties of Ti1−xCx coatings (with x being in the range of 0–0.5), deposited by reactive magnetron sputtering from a Ti target in Ar/C2H2 mixtures at ∼200 °C. The mechanical and tribological properties were found to strongly depend on the chemical composition and the microstructure present. Very dense structures and highest hardness and elastic modulus, combined with low wear rates, were observed for films with chemical composition close to TiC. X-ray diffraction (XRD) studies showed that the coating deposited at high C2H2 flow rates composed of randomly oriented TiC crystallites. Morphological investigations by scanning electron microscopy (SEM) indicate that the morphology is strongly dependent on the carbon content of the coating. Coatings composition and bonding environment was investigated using X-ray photoelectron spectroscopy (XPS). Both the mechanical properties and tribological performance of the coatings were found to be dependent on carbon content.

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Podob, Mark. "Chemical Vapor Deposition (CVD) Coatings for Protection of Jet Engine Components." In ASME 1993 International Gas Turbine and Aeroengine Congress and Exposition. American Society of Mechanical Engineers, 1993. http://dx.doi.org/10.1115/93-gt-375.

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CVD coatings are thin films resulting from the chemical reaction between a gaseous phase and the heated surface of a substrate. Among the industries using CVD coating technology are electronics, tooling, fuel cogeneration, and aerospace. The electronics industry uses CVD to deposit semiconductor materials onto different substrates. For the tooling industry, titanium nitride (TiN), titanium carbide (TiC), or aluminum oxide (Al2O3) is deposited onto cutting or metal forming tools. These hardcoatings act as chemical and thermal barriers between the tool and workpiece. In the aerospace industry, CVD is used to deposit aluminide or chromide coatings onto jet engine blades and other hot section components. The coatings improve the corrosion and oxidation resistance of the base metal. CVD is replacing older established methods for protecting these same components. While the use of CVD coatings in the aerospace industry is relatively new, it is gaining increasing acceptance. In addition to producing aluminides and chromides, CVD reactions can form coatings containing silicon, yttrium, hafnium and other rare earth elements. Since the coatings are the result of the chemical reaction between high purity gases and solids, coatings can be free of porosity and inclusions.

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D'Anna, Emilia, Gilberto Leggieri, Armando Luches, Maurizio Martino, Alessio Perrone, Guiseppe Majni, Paolo Mengucci, and Ion N. Mihailescu. "Laser reactive ablation deposition of titanium nitride and titanium carbide films." In Optics for Productivity in Manufacturing, edited by Rolf-Juergen Ahlers, Peter Hoffmann, Hermann Lindl, and Ruediger Rothe. SPIE, 1994. http://dx.doi.org/10.1117/12.193108.

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Fan, Rui-Ying, Yue M. Lu, and Xiangyun Song. "Microstructure of titanium oxide thin films." In Shanghai - DL tentative, edited by Shixun Zhou and Yongling Wang. SPIE, 1991. http://dx.doi.org/10.1117/12.47278.

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SOUKIASSIAN, P. G. "1D-NANOSTRUCTURES ON SILICON CARBIDE THIN FILMS." In Proceedings of the International Workshop. WORLD SCIENTIFIC, 2004. http://dx.doi.org/10.1142/9789812702876_0016.

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Ostling, Mikael, Sang-Mo Koo, Sang-Kwon Lee, Carl-Mikael Zetterling, and Alexander Grishin. "Thin films in silicon carbide semiconductor devices." In SPIE Proceedings, edited by Junhao Chu, Zongsheng Lai, Lianwei Wang, and Shaohui Xu. SPIE, 2004. http://dx.doi.org/10.1117/12.607264.

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Ciupina, Victor, Rodica Vladoiu, Cristian P. Lungu, Corneliu Porosnicu, Madalina Prodan, Aurelia Mandes, Virginia Dinca, et al. "Nanostructured carbon-titanium multilayer films obtained by thermionic vacuum arc method." In Nanostructured Thin Films XI, edited by Tom G. Mackay and Akhlesh Lakhtakia. SPIE, 2018. http://dx.doi.org/10.1117/12.2320474.

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Reports on the topic "Titanium Carbide Thin Films"

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Snow, G. Characterization of dc magnetron sputtering systems for the deposition of tantalum nitride, titanium, and palladium thin films for HMC (hybrid microcircuit) applications. Office of Scientific and Technical Information (OSTI), July 1989. http://dx.doi.org/10.2172/5884585.

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