Dissertations / Theses on the topic 'Tin oxide nanowire'

Nanobelts are a new class of semiconducting metal oxide nanowires with great potential for nanoscale devices. The present research focuses on the manipulation of SnO₂ nanobelts suspended in ethanol using microfluidics and electric fields. Dielectrophoresis (DEP) was demonstrated for the first time on semiconducting metal oxide nanobelts, which also resulted in the fabrication of a multiple nanobelt device. Detailed and direct real-time observations of the wide variety of nanobelt motions induced by DEP forces were conducted using an innovative setup and an inverted optical microscope. High AC electric fields were generated on a gold microelectrode (~ 20 µm gap) array, patterned on glass substrate, and covered by a ~ 10 µm tall PDMS (polydimethylsiloxane) channel, into which the nanobelt suspension was introduced for performing the DEP experiments. Negative DEP (repulsion) of the nanobelts was observed in the low frequency range (< 100 kHz) of the applied voltage, which caused rigid body motion as well as deformation of the nanobelts. In the high frequency range (~ 1 MHz - 10 MHz), positive DEP (attraction) of the nanobelts was observed. Using a parallel plate electrode arrangement, evidence of electrophoresis was also found for DC and low frequency (Hz) voltages. The existence of negative DEP effect is unusual considering the fact that if bulk SnO₂ conductivity and permittivity values are used in combination with ethanol properties to calculate the Clausius Mossotti factor using the simple dipole approximation theory; it predicts positive DEP for most of the frequency range experimentally studied. A fluidic nanobelt alignment technique was studied and used in the fabrication of single nanobelt devices with small electrode gaps. These devices were primarily used for conducting impedance spectroscopy measurements to obtain an estimate of the nanobelt electrical conductivity. Parametric numerical studies were conducted using COMSOL Multiphysics software package to understand the different aspects of the DEP phenomenon in nanobelts. The DEP induced forces and torques were computed using the Maxwell Stress Tensor (MST) approach. The DEP force on the nanobelt was calculated for a range of nanobelt conductivity values. The simulation results indicate that the experimentally observed behavior can be explained if the nanobelt is modeled as having two components: an electrically conductive interior and a nonconductive outer layer surrounding it. This forms the basis for an explanation of the negative DEP observed in SnO₂ nanobelts suspended in ethanol. It is thought that the nonconductive layer is due to depletion of the charge carriers from the nanobelt surface regions. This is consistent with the fact that surface depletion is a commonly observed phenomenon in SnO₂ and other semiconducting metal oxide materials. The major research contribution of this work is that, since nanostructures have large surface areas, surface dominant properties are important. Considering only bulk electrical properties can predict misleading DEP characteristics.

Transparent conducting oxides (TCOs) combine optical transparency in the visible region with a high electrical conductivity. In2O3 doped with Sn (widely, but somewhat misleadingly, known as indium tin oxide or ITO) is at present the most important TCO, with applications in liquid crystal displays, touch screen displays, organic photovoltaics and other optoelectronic devices. Surprisingly, many of its fundamental properties have been the subject of controversy or have until recently remained unknown, including even the nature and magnitude of the bandgap. The technological importance of the material and the renewed interest in its basic physics prompted the research described in this thesis. This thesis aims (i) to establish conditions for the growth of high-quality In2O3 nanostructures and thin films by oxygen plasma assisted molecular beam epitaxy and (ii) to conduct comprehensive investigations on both the surface physics of this material and its structural and electronic properties. It was demonstrated that highly ordered In2O3 nanoislands, nanorods and thin films can be grown epitaxially on (100), (110) and (111) oriented Y-stabilized ZrO2 substrates respectively. The mismatch with this substrate is -1.7%, with the epilayer under tensile strain. On the basis of ab initio density functional theory calculations, it was concluded that the striking influence of substrate orientation on the distinctive growth modes was linked to the fact that the surface energy for the (111) surface is much lower than for either polar (100) or non-polar (110) surfaces. The growth of In2O3(111) thin films was further explored on Y-ZrO2(111) substrates by optimizing the growth temperature and film thickness. Very thin In2O3 epilayers (35 nm) grew pseudomorphically under high tensile strain, caused by the 1.7% lattice mismatch with the substrate. The strain was gradually relaxed with increasing film thickness. High-quality films with a low carrier concentration (5.0  1017 cm-3) and high mobility (73 cm2V-1s-1) were obtained in the thickest films (420 nm) after strain relaxation. The bandgap of the thinnest In2O3 films was around 0.1 eV smaller than that of the bulk material, due to reduction of bonding-antibonding interactions associated with lattice expansion. The high-quality surfaces of the (111) films allowed us to investigate various aspects of the surface structural and electronic properties. The atomic structure of In2O3 (111) surface was determined using a combination of scanning tunnelling microscopy, analysis of intensity/voltage curves in low energy electron diffraction and first-principles ab initio calculations. The (111) termination has an essentially bulk terminated (1 × 1) surface structure, with minor relaxations normal to the surface. Good agreement was found between the experimental surface structure and that derived from ab initio density functional theory calculations. This work emphasises the benefits of a multi-technique approach to determination of surface structure. The electronic properties of In2O3(111) surfaces were probed by synchrotron-based photoemission spectroscopy using photons with energies ranging from the ultraviolet (6 eV) to the hard X-ray regime (6000 eV) to excite the spectra. It has been shown that In2O3 is a highly covalent material, with significant hybridization between O and In orbitals in both the valence and the conduction bands. A pronounced electron accumulation layer presents itself at the surfaces of undoped In2O3 films with very low carrier concentrations, which results from the fact the charge neutrality level of In2O3 lies well above the conduction band minimum. The pronounced electron accumulation associated with a downward band bending in the near surface region creates a confining potential well, which causes the electrons in the conduction band become quantized into two subband states, as observed by angle resolved photoemission spectra (ARPES) Fermi surface mapping. The accumulation of high density of electrons near to the surface region was found to shrink the surface band gap through many body interactions. Finally epitaxial growth of In2O3 thin films on α-Al2O3(0001) substrates was investigated. Both the stable body centred cubic phase and the metastable hexagonal corundum In2O3 phase can be stabilized as epitaxial thin films, despite large mismatches with the substrate. The growth mode involves matching small but different integral multiples of lattice planes of the In2O3 and the substrate in a domain matching epitaxial growth mode.

Self-powered sensor devices could find widespread application to monitor personal health, automobiles or buildings. One of the most ubiquitous form of energy on which these devices could rely is vibrational energy. To convert this energy into electrical energy, the research is focusing on piezoelectric materials. Examples of these materials are ZnO or Zinc Tin Oxides (ZTO). Modelled into nanowires and incorporated into an elastomer at the University of Lisbon, these materials have been demonstrated to result in macroscopically efficient energy conversion. In this work, I use Piezoelectric Force Microscopy to characterize the piezoelectric response of a single ZTO nanowire, namely, to measure the component d33 of its piezoelectric strain tensor. P(VDF-TrFE) thin film, i.e. a material with well characterized piezoelectric proprieties, is used to calibrate the instrument sensitivity. The value I obtain for the d33 of the ZTO nanowire is 23.70±0.04pm/V. In order to use it as a reference, I perform a characterization also for a ZnO nanowire. The value I obtain is 10.36±0.03pm/V. The value for the ZTO nanowire is therefore about double that of the ZnO. This result certifies ZTO nanowires as good candidates for energy conversion in future self-powered devices.

Thesis (M.S.) -- University of Maryland, College Park, 2008.
Thesis research directed by: Dept. of Materials Science and Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.

Thesis (Ph. D.)--Materials Science and Engineering, Georgia Institute of Technology, 2008.
Peter J. Hesketh, Committee Member ; Zhong Lin Wang, Committee Chair ; C.P. Wong, Committee Member ; Robert L. Snyder, Committee Member ; Christopher Summers, Committee Member.

Resistive switching in metal oxide materials has recently renewed the interest of many researchers due to the many application in non-volatile memory and neuromorphic computing. A memristor or a memristive device in general, is a device behaving as nonlinear resistor with memory which depends on the amount of charges that passes through it. A novel idea of combining the physical resistive switching phenomenon and the circuit-theoretic formalism of memristors was proposed in 2008. The physical mechanism on how resistive switching occurs is still under debate. A physical understanding of the switching phenomenon is of much importance in order to tailor specific properties for memory applications. To investigate the resistive switching in oxide materials, memristive devices were fabricated starting from materials processing: low-pressure chemical vapor deposition of ZnO nanowires (NWs), low-temperature atomic layer deposition (ALD) of TiO2 thin films and micro-pulse ALD of Fe2O3 thin films. The distinct geometry of ZnO NWs makes it possible to investigate the effect of the electrode material, surface states and compliance to the memristive properties. A simpler method of fabricating TiO2-based devices was explored using low-temperature atomic layer deposition. This approach is very promising for device application using photoresist and polymeric substrates without thermal degradation during and after device fabrication. ALD of pure phase Fe2O3 thin films was demonstrated using cyclic micro-pulses. Based on the performance of the fabricated devices, the oxide materials under this study have promising properties for the next-generation memory devices.

Many new applications are being proposed and developed for use in the terahertz (THz) frequency region. Similarly, many new materials are being characterized for possible use in this area. Nanostructured forms are of particular interest since they may yield desirable properties, but they remain especially challenging to characterize. This work focuses on the characterization of zinc oxide (ZnO) in bulk and nanowire form. A method for characterizing nanostructures at THz by use of a parallel-plate waveguide (PPWG) is presented. This method is novel in that it is simple, both in theory and practice, and does not require the use of complex measurement techniques such as differential and double modulated terahertz time-domain spectroscopy (THz-TDS). To enable easy evaluation of the quality of the result the maximum deviation in the material response measurement is presented. The dielectric properties of bulk and nanowire ZnO as determined by THz-TDS measurements are reported, and the electrical conductivity extracted from both are presented for comparison. Experimental results are compared to the well established pseudo-harmonic phonon dielectric model. Shortcomings in the pseudo-harmonic phonon model are resolved when coupled with a modified Drude model. This work will enable the determination of THz material properties from nano-scale and very-thin film materials with better reliability and practicality than what has been possible until now.

Im Laufe der Verkleinerungen integrierter Schaltungen ergab sich die Notwendigkeit der alternativen dielektrischen Materialen. Hohe Polarisierbarkeiten in diesen dielektrischen Dünnfilmen treten erst in hoch direktionalen kristallinen Phasen auf. Aufgrund der erschwerten Integrierbarkeit von epitaktischen, einkristallinen Oxidfilmen können nur poly-, beziehungsweise nanokristalle Filme eingesetzt werden. Diese sind jedoch mit hohen Leckströmen behaftet. Weil die Information in einer DRAM-Zelle als Ladung in einem Kondensator gespeichert wird ist der Verlust dieser Ladung durch Leckströme die Ursache für Informationsverluste. Die Frequenz der notwendigen Auffrischungszyklen einer DRAM-Zelle wird direkt durch die Leckströme bestimmt. Voraussetzungen für die Entwicklung neuer dielektrischer Materialien ist das Verständnis der zugrunde liegenden Ladungsträgertransportmechanismen und ein Verständnis der strukturellen Schichteigenschaften, welche zu diesen Leckströmen führen. Conductive atomic force Microscopy ist ein Rastersondenmethode mit der strukturelle Eigenschaften mit lokaler elektrischer Leitfähigkeit korreliert wird. Mit dieser Methode wurde in einer vergleichenden Studie die räumlichen Leckstromverteilungen untersucht. Und es wurde gezeigt, dass es genügt eine nicht geschlossene Zwischenschicht Aluminiumoxid in eine Zirkoniumdioxidschicht zu integrieren um die Leckströme signifikant zu reduzieren während eine ausreichend hohe Kapazität erhalten bleibt. Darüberhinaus wurde ein CAFM modifiziert und benutzt um das Schaltverhalten eines Siliziumnanodrahtschottkybarrierenfeleffektransistor in Abhängigkeit der Spitzenposition zu untersuchen. Es konnte experimentell bestätigt werden das die Schottkybarrieren den Ladungstransport in diesen Bauteilen kontrollieren. Darüber hinaus wurde ein proof-of-concept für eine umprogrammierbaren nichtflüchtigen Speicher, der auf Ladungsakkumulation und der resultierenden Bandverbiegung an den Schottkybarrieren basiert, gezeigt.
In the course of the ongoing downscaling of integrated circuits the need for alternative dielectric materials has arisen. The polarizability of these dielectric thin-films is highest in highly directional crystalline phases. Since epitaxial single crystalline oxide films are very difficult to integrate into the complex DRAM fabrication process, poly- or nanocrystalline thin-films must be used. However these films are prone to very high leakage currents. Since the information is stored as charge on a capacitor in the DRAM cell, the loss of this charge through leakage currents is the origin of information loss. The rate of the necessary refresh cycles is directly determined by these leakage currents. A fundamental understanding of the underlying charge carrier transport mechanisms and an understanding of the structural film properties leading to such leakage currents are essential to the development of new, dielectric thin-film materials. Conductive Atomic Force Microscopy (CAFM) is a scanning probe based technique which correlates structural film properties with local electrical conductivity. This method was used to examine the spatial distribution of leakage currents in a comparative study. I was shown that it is sufficient to include an unclosed interlayer of Aluminium oxide into a Zirconium dioxide film to significantly reduce leakage currents while maintaining a sufficiently high capacitance. Moreover, a CAFM was modified and used to examine the switching behavior of a silicon nanowire Schottky barrier field effect transistors in dependence of the probe position. It was proven experimentally that Schottky barriers control the charge carrier transport in these devices. In addition, a proof of concept for a reprogrammable nonvolatile memory device based on charge accumulation and band bending at the Schottky barriers was shown.

Traditional sources of electrical energy are finite and can produce significant pollution. Solar cells produce clean energy from incident sunlight, and will be an important part of our energy future. A new nanostructured extremely thin absorber solar cell with 0.98% power conversion efficiency and maximum external quantum efficiency of 61% at 650 nm has been fabricated and characterized. This solar cell is composed of a fluorine-doped tin oxide base layer, n-type aluminum doped zinc oxide nanowires, a cadmium selenide absorber layer, poly(3-hexylthiophene) as a p-type layer, and thermally evaporated gold as a back contact. Zinc oxide nanowire electrodeposition has been investigated for different electrical environments, and the role of a zinc oxide thin film layer has been established. Cadmium selenide nanoparticles have been produced and optimized in-house and compared to commercially produced nanoparticles. Argon plasma cleaning has been investigated as a method to improve electronic behavior at cadmium selenide interfaces. The thermal anneal process for cadmium selenide nanoparticles has been studied, and a laser anneal process has been investigated. It has been found that the most efficient solar cells in this study are produced with a zinc oxide thin film, zinc oxide nanowires grown under constant -1V bias between the substrate material and the anode, cadmium selenide nanoparticles purchased commercially and annealed for 24 hours in the presence of cadmium chloride, and high molecular weight poly(3-hexylthiophene) spin-coated in a nitrogen environment.

Elektrochemické metody nacházejí využití v mnoha aplikacích (např. senzorice, skladování el. energie nebo katalýze). Jejich nespornou výhodou je nízká finanční náročnost na přístrojové vybavení. Abychom lépe porozuměli procesům probíhajícím na elektrodách, je dobré znát elektronickou pásovou strukturu materiálu elektrody. Úkolem této práce je vyhodnotit výstupní práci a pozici hrany valenčního pásu nových materiálů pro elektrody, konkrétně cínem dopovaného oxidu india pokrytého nanotrubicemi sulfidu wolframičitého. Ultrafialová fotoelektronová spektroskopie a Kelvinova silová mikroskopie jsou metody použité pro tuto analýzu. Zvláštní důraz je kladen na přípravu vzorků elektrod pro měření, aby nedošlo k nesprávné interpretaci výsledků vlivem vnějších efektů jako je např. kontaminace nebo modifikace povrchu.

Les travaux présentés dans ce manuscrit traitent des mécanismes de croissance associés au dépôt de nanofils d’oxyde de zinc (ZnO) en bain chimique. Cette technique de croissance, attractive de par sa facilité de mise en œuvre et son coût limité, consiste à immerger un substrat dans une solution de précurseurs portée à basse température (typiquement 90°) pendant quelques heures. Le dépôt préalable d’une fine couche de ZnO fortement texturée est nécessaire à l’obtention de la morphologie nanofils et il est donc nécessaire de maîtriser le processus de croissance associé. Dans un souci de cohérence, la méthode sol-gel dite de trempage consistant à immerger le substrat dans une solution de précurseurs avant de recuire la couche ainsi déposée est ici adoptée. Le ZnO, sous sa morphologie nanofils, est actuellement fortement étudié du fait de son fort potentiel applicatif. Typiquement, il peut être utilisé en tant que brique de basse dans la réalisation de cellules solaires de types Grätzel ou à absorbeur extrêmement fin. Dans ce contexte, il est nécessaire que les nanostructures élaborées présentent des propriétés physiques attractives et ces dernières doivent donc être finement caractérisées. Dans un premier temps, l’influence des paramètres expérimentaux associés au processus de trempage sur les propriétés morphologiques et structurales de films minces de ZnO déposés via ce processus est quantifiée. Il est montré à cette occasion que dans des conditions extrêmes de recuits, les couches évoluent vers une morphologie de type fil. Fort des conclusions obtenues, les mécanismes régissant la croissance de nanofils de ZnO en bain chimique, et plus particulièrement l’influence de la surface de nucléation sur ces derniers, sont étudiés. La possibilité d’obtenir des nanofils localisés et parfaitement alignés à travers la réalisation de masques est démontrée. L’ensemble des nanostructures élaborées (couches et nanofils) sont caractérisées par photoluminescence afin de pouvoir estimer leur qualité structurelle et d’étudier les défauts en présence. Pour finir, une étude plus fondamentale consistant à suivre in situ l’évolution des nanofils au cours de la croissance par rayonnement synchrotron est proposée avec une attention toute particulière aux phénomènes de polarité
ZnO nanowires are of strong interest in the realization of solar cells based on type-II band alignment. They can be grown by chemical bath deposition, a technique in which the substrate is seeded with ZnO nanoparticles by dip-coating and then placed in a precursor solution heated at 90°C for a couple of hours. In this document, we will discuss the nucleation and growth mechanisms associated with this low cost technique. In particular, we will see how the seed layer morphology can drive the one of the nanowires. Also, advanced characterization by photoluminescence and synchrotron radiation will be performed on the grown nanostructures

碩士
國立清華大學
工程與系統科學系
96
Transparent conductive oxides (TCO) ,such as SnO2, In2O3, CdO, and ZnO, have become increasingly important in a large variety of applications due to demands for optically-transparent, conductive materials.[1-2] To enhance the conductivity, we usually dope suitable atoms introduce more free carriers.[3] It has been widely used as electric leads in optoelectronic devices such as flat panel displays and thin film solar energy cells. A common TCO used in research and industry is tin-doped indium oxide (ITO). However, ITO experiences a reduction of electrical conductivity when exposed to oxygen at elevated temperatures (> 300 ℃). Therefore, FTO, which is much more thermally stable, is often used as an alternative to ITO. As device size continues to decrease, the potential use of nanoscaled structures of these TCOs grows. However, very little to no work has been published regarding the fabrication of FTO nanowires.[4] The authors report the growth of F-doped SnO2 single crystalline nanowires by carrying out the thermal evaporation of solid Sn and SnF2 powders a in an Ar/O2 ambient gas. We analyzed the samples with scanning electron microscopy, X-ray diffraction, transmission electron microscopy. From the EDS spectra, we can quantify fluorine-doping in the nanowires is about 2 at%. The electrical properties of rutile-type F-doped SnO2 low-dimensional structures were analysed using a scanning tunnelling microscopy (STM) in situ holder for transmission electron microscopes (TEM).The measured I-V curve obtained typically show Ohmic-like behavior between the gold electrode and F-doped SnO2 nanowires. And the resistivity of FTO NWs is 0.0278Ω-cm, much smaller than pure SnO2 NWs(289 Ω-cm).

Transparent electrodes (TEs) have become important components of displays, touch screens, and solar photovoltaic (PV) energy conversion devices. As electrodes, they must be electrically conductive while being transparent. Transparent materials are normally poor conductors and materials with high electrical conductivity, such as metals, are typically not transparent. From the few candidate materials, indium tin oxide (ITO) is currently the best available, but indium is an expensive material and ITO cost has risen with increasing demand. Therefore, alternative materials or methods are sought to encourage production needs of applications and help in reducing their price. This thesis presents and discusses results of experimental work for a method, field-directed chaining, to produce a TE device which is nanowire-based, with a figure of merit FoM= 2.39 x10E-4 Ohm E-1, comparable to ITO but with potential for far lower cost. Using electric field-directed chaining, multiple parallel long chains of metal nanowires are assembled on inexpensive transparent materials such as glass by field directed nanowire chaining, using methods first demonstrated in our laboratory. In this work, we have improved the fraction of functional chains, by tuning the field/voltage, a key step in increasing the FoM and lowering the cost. The effect of operating parameters on TE optical and electrical properties has been studied and identified as well. From experiments with twenty seven substrates, each with a range of electric field and nanowire concentration, the highest light transmission achieved is 78% and the lowest sheet resistance achieved is 100 Ohm/sq. Among all the operating parameters, the electric field has the most significant influence on the fraction of nanowire chains that are functional. In the operating range of electric field strength available to us, we observed a monotonic increase in the fraction of functional nanowire chains. We found a counter-intuitive change in TE properties in a sub-range of nanowire concentration, associated with a change in the structure of chained patterns.
Graduate

A variety of nanostructures of tin (IV) oxide (TO) are synthesized using two fabrication methods: a solution spin-coating method followed by post-annealing in an oxygen flow and a newly developed catalyst-assisted pulsed laser deposition (PLD) technique. The spin-coating method is used to fabricate granular TO films with monodisperse, stable, ultra-small nanocrystallites (4-5 nm in size), the size of which is found to increase exponentially with post-anneal above 500??C. These nanocrystalline films are conductive and highly transparent, and their bandgap shows broadening due to a high carrier concentration. Their resistivity behavior as a function of temperature in the 50-280 K range can be explained by a two-medium transport model, i.e. transport through the crystalline grains and across the grain boundaries, and through the charge-depletion layer, where a potential barrier is found for transport across the grain boundaries. Electronic transport in these films follows a 3D-variable range hopping model, which reveals an increase in the localization length of carriers with increasing the TAnneal above the onset of exponential growth at TAnneal= 500??C. By homogenously doping Eu3+ in these nanocrystalline films up to a high doping level of ~ 8%, optical luminescence and magnetic orderings can be introduced into these nanocrystalline TO films. Both characteristic Eu3+ emission and defect-related TO emissions are observed in the otherwise transparent TO films upon UV-excitation. In spite of the non-magnetic nature of Eu3+ ions, magnetic orderings appear in the highly doped TO films below 50 K upon the emergence of Eu2Sn2O7 phase. In the second part of this work, we employ a layer of gold nanoislands with controlled sizes (10-50 nm) as catalysts for pulsed laser deposition of TO nanostructures. Highly crystalline TO nanobricks, cuboid nanoparticles, nanowires and nanobelts are obtained for the first time through vapour-solid or vapour-liquid-solid (VLS) mechanisms. Of particular interest are the micron long one-dimensional (1D) nanowires and nanobelts, with the smallest square and rectangular cross-sections, respectively, ever reported. These single-crystalline nanostructures are obtained at relatively low temperatures of 600??C, for nanowires, and 500??C, for nanobelts, and their cross-sectional sizes can be easily controlled by the size of the gold nanoislands. The nanobelts are found to grow along the [100] and [101] axes, while the nanowires appear to grow along the [100] axis. The growth evolution of the nanobelts are also investigated in detail revealing their VLS growth mode and their single-crystalline structure throughout the growth, which opens the prospect of controlling their growth axis and consequently their side-surface planes by pinning the base to the substrate at the desired crystalline orientation. Together, the two fabrication methods developed in the present work offer facile approaches to growing two scientifically and technologically important classes of TO nanostructures, i.e., nanocrystalline film and 1D nanostructures. Thorough characterization of the resulted nanostructured materials using advanced microscopic, spectroscopic and other techniques, including Helium Ion Microscopy, has been provided. Modification of structure, morphology and physical properties of these functional nanostructured materials are also illustrated by controlling the growth parameters and by (Eu-)doping, which pave the way for introducing new properties for applications in chemical sensing, (opto)electronics and displays.

Li-ion thin film battery technology has attracted much attention in recent years due to its highest need in portable electronic devices. Development of new materials for lithium ion battery (LIB) is very crucial for enhancement of the performance. LIB can supply higher energy density because Lithium is the most electropositive (-3.04V vs. standard hydrogen electrode) and lightest metal (M=6.94 g/mole). LIBs show many advantages over other kind of batteries such as, high energy density, high power density, long cycle life, no memory effect etc. The major work presented in this thesis is on the development of nanostructured materials for anode of Li-ion battery. It involves the synthesis and analysis of grapheme nanosheet (GNS) and its performance as anode material in Li ion battery. We studied the synthesis of GNS over different substrates and performed the anode studies. The morphology of GNS has great impact on Li storage capacity. Tin and Tin oxide nanostructures have been embedded in the GNS matrix and their electrochemical performance has been studied. Chapter 1 gives the brief introduction about the Li ion batteries (LIBs), working and background. Also the relative advantages and characterization of different electrode materials used in LIBs are discussed. Chapter 2 discusses various experimental techniques that are used to synthesize the electrode materials and characterize them. Chapter3 presents the detailed synthesis of graphene nanosheet (GNS) through electron cyclotron resonance (ECR) microwave plasma enhanced chemical vapor deposition (ECR PECVD) method. Various substrates such as metallic (copper, Ni and Pt coated copper) and insulating (Si, amorphous SiC and Quartz) were used for deposition of GNS. Morphology, structure and chemical bonding were analyzed using SEM, TEM, Raman, XRD and XPS techniques. GNS is a unique allotrope of carbon, which forms highly porous and vertically aligned graphene sheets, which consist of many layers of graphene. The morphology of GNS varies with substrate. Chapter 4 deals with the electrochemical studies of GNS films. The anode studies of GNS over various substrates for Li thin film batteries provides better discharge capacity. Conventional Li-ion batteries that rely on a graphite anode have a limitation in the capacity (372 mAh/g). We could show that the morphology of GNS has great effect in the electrochemical performance and exceeds the capacity limitation of graphite. Among the electrodes PtGNS shown as high discharge capacity of ~730 mAh/g compare to CuGNS (590 mAh/g) and NiGNS (508 mAh/g) for the first cycle at a current density of 23 µA/cm2. Electrochemical impedance spectroscopy provides the various cell parameters of the electrodes. Chapter 5 gives the anodic studies of Tin (Sn) nanoparticles decorated over GNS matrix. Sn nanoparticles of 20 to 100nm in size uniformly distributed over the GNS matrix provides a discharge capacity of ~1500 mAh/g mAh/g for as deposited and ~950 mAh/g for annealed Sn@GNS composites, respectively. The cyclic voltammogram (CV) also shows the lithiation and delithiation process on GNS and Sn particles. Chapter 6 discusses the synthesis of Tinoxide@GNS composite and the details of characterization of the electrode. SnO and SnO2 phases of Tin oxide nanostructures differing in morphologies were embedded in the GNS matrix. The anode studies of the electrode shows a discharge capacity of ~1400 mAh/g for SnO phase (platelet morphology) and ~950 mAh/g for SnO2 phase (nanoparticle morphology). The SnO phase also exhibits a good coulumbic efficiency of ~95%. Chapter 7 describes the use of SnO2 nanowire attached to the side walls of the GNS matrix. A discharge capacity of ~1340 mAh/g was obtained. The one dimensional wire attached to the side walls of GNS film and increases the surface area of active material for Li diffusion. Discharge capacity obtained was about 1335 mAhg-1 and the columbic efficiency of ~86% after the 50th cycle. The research work carried out as part of this thesis, and the results have summarized in chapter 8.

Li-ion thin film battery technology has attracted much attention in recent years due to its highest need in portable electronic devices. Development of new materials for lithium ion battery (LIB) is very crucial for enhancement of the performance. LIB can supply higher energy density because Lithium is the most electropositive (-3.04V vs. standard hydrogen electrode) and lightest metal (M=6.94 g/mole). LIBs show many advantages over other kind of batteries such as, high energy density, high power density, long cycle life, no memory effect etc. The major work presented in this thesis is on the development of nanostructured materials for anode of Li-ion battery. It involves the synthesis and analysis of grapheme nanosheet (GNS) and its performance as anode material in Li ion battery. We studied the synthesis of GNS over different substrates and performed the anode studies. The morphology of GNS has great impact on Li storage capacity. Tin and Tin oxide nanostructures have been embedded in the GNS matrix and their electrochemical performance has been studied. Chapter 1 gives the brief introduction about the Li ion batteries (LIBs), working and background. Also the relative advantages and characterization of different electrode materials used in LIBs are discussed. Chapter 2 discusses various experimental techniques that are used to synthesize the electrode materials and characterize them. Chapter3 presents the detailed synthesis of graphene nanosheet (GNS) through electron cyclotron resonance (ECR) microwave plasma enhanced chemical vapor deposition (ECR PECVD) method. Various substrates such as metallic (copper, Ni and Pt coated copper) and insulating (Si, amorphous SiC and Quartz) were used for deposition of GNS. Morphology, structure and chemical bonding were analyzed using SEM, TEM, Raman, XRD and XPS techniques. GNS is a unique allotrope of carbon, which forms highly porous and vertically aligned graphene sheets, which consist of many layers of graphene. The morphology of GNS varies with substrate. Chapter 4 deals with the electrochemical studies of GNS films. The anode studies of GNS over various substrates for Li thin film batteries provides better discharge capacity. Conventional Li-ion batteries that rely on a graphite anode have a limitation in the capacity (372 mAh/g). We could show that the morphology of GNS has great effect in the electrochemical performance and exceeds the capacity limitation of graphite. Among the electrodes PtGNS shown as high discharge capacity of ~730 mAh/g compare to CuGNS (590 mAh/g) and NiGNS (508 mAh/g) for the first cycle at a current density of 23 µA/cm2. Electrochemical impedance spectroscopy provides the various cell parameters of the electrodes. Chapter 5 gives the anodic studies of Tin (Sn) nanoparticles decorated over GNS matrix. Sn nanoparticles of 20 to 100nm in size uniformly distributed over the GNS matrix provides a discharge capacity of ~1500 mAh/g mAh/g for as deposited and ~950 mAh/g for annealed Sn@GNS composites, respectively. The cyclic voltammogram (CV) also shows the lithiation and delithiation process on GNS and Sn particles. Chapter 6 discusses the synthesis of Tinoxide@GNS composite and the details of characterization of the electrode. SnO and SnO2 phases of Tin oxide nanostructures differing in morphologies were embedded in the GNS matrix. The anode studies of the electrode shows a discharge capacity of ~1400 mAh/g for SnO phase (platelet morphology) and ~950 mAh/g for SnO2 phase (nanoparticle morphology). The SnO phase also exhibits a good coulumbic efficiency of ~95%. Chapter 7 describes the use of SnO2 nanowire attached to the side walls of the GNS matrix. A discharge capacity of ~1340 mAh/g was obtained. The one dimensional wire attached to the side walls of GNS film and increases the surface area of active material for Li diffusion. Discharge capacity obtained was about 1335 mAhg-1 and the columbic efficiency of ~86% after the 50th cycle. The research work carried out as part of this thesis, and the results have summarized in chapter 8.

碩士
國立交通大學
物理研究所
98
Due to its high optical transparency and low resistivity, ITO has been widely used in LCDs, touch panels and solar cells in the recent years. Because of its huge contribution to human’s technology, the conduction mechanisms and electrical properties of ITO deserve more in-depth studies. We have measured a series of ITO nanowires with different levels of disorder. The electron dephasing lengths, which decrease with increasing temperature, are extracted from weak-localization magnetoresistance measurements. When the dephasing length is close to the nanowire diameter, the weak-localization effect will cross over from being one-dimensional to being three-dimensional. In one low- resistivity (200 cm ?{ ? ? at 300 K) nanowire, a long dephasing length was observed, which varied from about 500 nm at 0.25 K to 150 nm at 40K. Therefore, the nanowire revealed one-dimensional behavior over the whole measurement temperature range. In one high-resistivity (1000 ?? ?{cm at 300 K) sample, we got a dephasing length of 200 nm at 0.26 K. When the temperature increased, ? L became smaller than the diameter of the sample, and hence a crossover from one-dimensional to iii three-dimensional weak-localization effect was observed. In particular, we found disorder-induced spin-orbit interaction in the high-resistivity sample. In this case, weak anti-localization occurred in the low temperature region. This result demonstrates that the dephasing length and the strength of spin-orbit interaction can be tuned by varying the level of disorder in ITO nanowires.

碩士
國立交通大學
物理研究所
100
ITO is a good conductor with high optical transparency, and widely used in display panels. We measured the magnetoresistance of ITO nanowires and found that at low temperature conditions, ITO nanowires have a significant weak-localization effect. We use the weak localization theory to fitting dephasing length at different temperature, and to be very reasonable and accurate results. From the magnetoresistance, we also observed another interesting quantum interference effect: Universal Conductance Fluctuations. We found that the magnetoresistance data have some aperiodic resistance fluctuations at low temperatures, and these fluctuations increase as temperature decrease. The size of the conductance fluctuations is in the order of e2 /h. And the fluctuation pattern is Reproducible at low temperature, which is the important feature of UCF. Fluctuation pattern reflects the composition of impurities and defects of sample. We put the sample back to room temperature and cool down again, we found that the fluctuation pattern changes under low-temperature measurements, indicating that the heat of room temperature could changes the position of the ITONWs’ impurities and defects. We know that weak-localization effect is a very mature theory, the results of fitting is very accurate, so we use weak-localization effect to fitting out of the dephasing length, and compare with the dephasing length which calculated from UCF theory. Roughly speaking, we got a consistent result,and some results of two theoretical are not contradictory. But no way to calculate the universal conductance fluctuations in a more accurate result, which requires further discussion.

碩士
國立中正大學
化學工程研究所
99
This research was devoted to synthesize tin dioxide nanowires on the Si wafer by a thermal evaporation method and estimation of the field emission properties. The research was divided into two parts. The first part of the research was production. We used Au metal particles and silicon wafer as the catalyst and substrate , respectively , and use SnO powder as the evaporation source for the experiments. The result found that the diameter of SnO2 nanowires was changed by experiment parameters . SnO2 nanowires’ diameter were about 50~65 nm with the synthesis temperature of 1000℃. In addition , we found that the diameter decreased by increasing the amount of oxygen gas. The SnO2 nanowires were about 15~35 nm. In the second part of the research was the study of field emission properties. As-synthesized SnO2 nanowires was used as the cathod. The lowest turn-on field value was 1V/μm using 10~15nmSnO2 nanoemitters. We found that the turn-on field value was increased by increasing the diameter of SnO2 nanowires. The highest field enhancement factor value was 9650 usingt 15~20 nm SnO2 nanoemitters , The field enhancement factor value was decreased by increasing the diameter of SnO2 nanowires.

博士
南臺科技大學
電子工程系
107
In this research, a vertically aligned P-type silicon nanowire (SiNW) array was fabricated through metal-assisted chemical etching (MACE) of silicon wafers. Thin films of zinc oxide (ZnO) were deposited using vertically aligned SiNW arrays so as to investigate the formation of ZnO/SiNWs nanostructured hetero diodes. In the experiment, silicon wafers were used as the substrate in the manufacture of nanowires of different lengths under varying etching time parameters. Subsequently, RF magnetron sputtering was employed to deposit thin films of ZnO on the SiNWs to form a ZnO/SiNW heterostructure. The measurement results made by the field emission scanning electron microscope (FE-SEM) revealed that the 10- and 30-minute nano-etching on the SiNWs produced etch-depths of about 3.5 μm and 6.8 μm respectively. Previously, to make basic electronic components of the ZnO/SiNW heterostructures, nanowires had to be chemically doped first before p-type and n-type diodes could be formed on them. In this dissertation, the nonlinear rectification (I-V) characteristics were obtained by directly measuring the current-voltage (I-V) properties of the ZnO/SiNW heterostructure. Experiments show that the ZnO/SiNW structure is naturally capable of forming a hetero diode. The nanostructured ZnO/SiNW hetero diode exhibits a low turn-on voltage (0.5 to 0.7 V) in the forward-bias range and a small leakage current in the reverse-bias range. The rectification ratio of the ZnO/SiNW heterogeneous junction diode can be as high as 97.6 at 0.5 V. The data measured in experiments I to V show that the nanostructured ZnO/SiNW hetero diodes have rectification ratios of 19.7 and 97.6 at 0.7 V and 0.5 V, respectively. It is evident that these ZnO/SiNW hetero nanostructures to integrate components and application for photoelectric industry, such as solar battery, light checking machines and so on.

碩士
國立成功大學
材料科學及工程學系碩博士班
101
This study is to investigate gas sensing properties of individual ZnO and SnO nanowires grown by chemical vapor deposition (CVD). To measure NH3 gas sensing properties in room temperature, as-grown single nanowires were placed on a chip to fabricate the device with the e-beam lithography technology. The morphology and microstructure of the ZnO and SnO nanostructures were characterized by scanning electron microscopy and transmission electron microscopy. With X-ray photoelectron spectroscopy, we can investigate the surface properties and bonding of the nanowires. From the results, the ZnO nanowires form more OH- bonding than SnO nanowires. The percentage of OH- bonding of ZnO and SnO are 79 % and 22 %, respectively. It means that water adsorption on ZnO nanowires is easier than that on SnO nanowires. By time dependence measurement, the sensing mechanism has been analyzed. The adsorption rate constants and desorption rate constants have also been calculated. The conductance of ZnO increases but that of SnO decreases when NH3 injection into the chamber. We can find that the response time of ZnO nanowires is shorter than that of SnO nanowires (about 14 seconds shorter in 70 ppm NH3) which means that ZnO nanowires have a larger adsorption rate constant and can detect NH3 fast.

碩士
國立臺灣師範大學
機電工程學系
103
In this study, the ZnO nanowires are prepared on glass substrate by using hydrothermal method, and deposited BiFeO thin film on the ZnO nanowires by sputtering; later, comparing the sensitivity of the pure ZnO nanowires and the ZnO nanowires with BiFeO. Different thickness of ZnO seed layer can be obtained by changing the sputtering deposition power, so with the increase of the thickness of seed layer, the surface roughness is reduced, and its nanowires diameter and length will be reduced. Using a hydrothermal method prepares ZnO nanowires of three kind of thickness 27, 35 and, 45 nm, and conducts gas sensing experiment of acetone and ammonia at 100, 150 and 200 °C, respectively. The seed layer thickness of 35 nm grown ZnO nanowires have the best sensing sensitivity (S = 7.2 for acetone, S = 3.72 for ammonia). After that we adopt the surface modification process to deposit the bismuth ferrites thin film coated on ZnO nanowires to increase gas sensitivity, and we find that the BiFeO thin film on ZnO nanowires of sensing sensitivity has been improved (S = 7.41 for acetone, S = 4.61 for ammonia), and ammonia sensing sensitivity are increased when operating temperature increases. Finally, conduct gas sensing experiment of high-temperature (300 °C) and room temperature (25 °C) ammonia, and the response speed is proportional to the concentrations of ammonia, especially BiFeO thin film coated on ZnO nanowires, With the concentrations increase, the response is also increase, even at low concentrations (1 ppm) also have the same result.

Recently, there has been a growing interest in semiconductor and semiconducting oxide nanowires for applications in electronics, energy conversion, energy storage and optoelectronic devices such as field effect transistors, solar cells, Li- ion batteries, gas sensors, light emitting diodes, field emission displays etc. Semiconductor and semiconducting oxide nanowires have been synthesized widely by different vapor transport methods. However, conditions like high growth temperature, low vacuum, carrier gases for the growth of nanowires, limit the applicability of the processes for the growth of nanowires on a large scale for different applications. In this thesis work, studies have been made on the growth of semiconductor and semiconducting oxide nanowires at a relatively lower substrate temperature (< 500 °C), in a high vacuum (1× 10-5 mbar), without employing any carrier gas, by electron beam and resistive thermal evaporation processes. The morphology, microstructure, and composition of the nanowires have been investigated using analytical techniques such as SEM, EDX, XRD, XPS, and TEM. The optical properties of the films such as reflectance, transmittance in the UV-visible and near IR region were studied using a spectrophotometer. Germanium nanowires were grown at a relatively lower substrate temperature of 380-450 °C on Si substrates by electron beam evaporation (EBE) process using a Au-assisted Vapor-Liquid-Solid mechanism. High purity Ge was evaporated in a high vacuum of 1× 10-5 mbar, and gold catalyst coated substrates maintained at a temperature of 380-450 °C resulted in the growth of germanium nanowires via Au-catalyzed VLS growth. The influence of deposition parameters such as the growth temperature, Ge evaporation rate, growth duration, and gold catalyst layer thickness has been investigated. The structural, morphological and compositional studies have shown that the grown nanowires were single-crystalline in nature and free from impurities. The growth mechanism of Germanium nanowires by EBE has been discussed. Studies were also made on Silicon nanowire growth with Indium and Bismuth as catalysts by electron beam evaporation. For the first time, silicon nanowires were grown with alternative catalysts by the e-beam evaporation method. The use of alternative catalysts such as Indium and Bismuth results in the decrease of nanowire growth temperature compared to Au catalyzed Si nanowire growth. The doping of the silicon nanowires is possible with an alternative catalyst. The second part of the thesis concerns the growth of oxide semiconductors such as SnO2, Sn doped Indium oxide (ITO) nanowires by the electron beam evaporation method. For the first time, SnO2 nanowires were grown with a Au-assisted VLS mechanism by the electron beam evaporation method at a low substrate temperature of 450 °C. SEM, XRD, XPS, TEM, EDS studies on the grown nanowires showed that they were single crystalline in nature and free of impurities. The influence of deposition parameters such as the growth temperature, oxygen partial pressure, evaporation rate of Sn, and the growth duration has been investigated. Studies were also done on the application of SnO2 nanowire films for UV light detection. ITO nanowires were grown via a self-catalytic VLS growth mechanism by electron beam evaporation without the use of any catalyst at a low substrate temperature of 250-400 °C. The influence of deposition parameters such as the growth temperature, oxygen partial pressure, evaporation rate of ITO, and growth duration has been investigated. Preliminary studies have been done on the application of ITO nanowire films for transparent conducting coatings as well as for antireflection coatings. The final part of the work is on the Au-assisted and self catalytic growth of SnO2 and In2O3 nanowires on Si substrates by resistive thermal evaporation. For the first time, SnO2 nanowires were grown with a Au-assisted VLS mechanism by the resistive thermal evaporation method at a low substrate temperature of 450 °C. SEM, XRD, XPS, TEM, and EDS studies on the grown nanowires showed that they were single crystalline in nature and free of impurities. Studies were also made on the application of SnO2 nanowire films for methanol sensing. The self-catalytic growth of SnO2 and In2O3 nanowires were deposited in high vacuum (5×10-5 mbar) by thermal evaporation using a modified evaporation source and a substrate arrangement. With this arrangement, branched SnO2 and In2O3 nanowires were grown on a Si substrate. The influence of deposition parameters such as the applied current to the evaporation boat, and oxygen partial pressure has been investigated. The growth mechanism behind the formation of the branched nanowires as well as nanowires has been explained on the basis of a self-catalytic vapor-liquid-solid growth mechanism. The highlight of this thesis work is employing e-beam evaporation and resistive thermal evaporation methods for nanowire growth at low substrate temperatures of ~ 300-500 °C. The grown nanowires were tested for applications such as gas sensing, transparent conducting coatings, UV light detection and antireflection coating etc. The thesis is divided into nine chapters and each of its content is briefly described below. Chapter 1 In this chapter, a brief introduction is given on nanomaterials and their applications. This chapter also gives an overview of the different techniques and different growth mechanisms used for nanowires growth. A brief overview of the applications of semiconductors and semiconductor oxide nanowires synthesized is also presented. Chapter 2 Different experimental techniques employed for the growth of Si, Ge, SnO2, In2O3, ITO nanowires have been described in detail in this chapter. Further, the details of the different techniques employed for the characterization of the grown nanowires were also presented. Chapter 3 In this chapter, studies on the growth of Germanium nanowires by electron beam evaporation (EBE) are given. The influence of deposition parameters such as growth temperature, evaporation rate of germanium, growth duration, and catalyst layer thickness was investigated. The morphology, structure, and composition of the nanowires were investigated by XRD, SEM, and TEM. The VLS growth mechanism has been discussed for the formation of the germanium nanowires by EBE using Au as a catalyst. Chapter 4 This chapter discusses the growth of Si nanowires with Indium and Bismuth as an alternate to Au-catalyst by electron beam evaporation. The influence of deposition parameters such as growth temperature, Si evaporation rate, growth duration, and catalyst layer thickness has been investigated. The grown nanowires were characterized using XRD, SEM, TEM and HRTEM. The Silicon nanowires growth mechanism has been discussed. Chapter 5 This chapter discusses the Au-catalyzed VLS growth of SnO2 nanowires by the electron beam evaporation method as well as Antimony doped SnO2 nanowires by co-evaporation method at a low substrate temperature of 450 °C. The grown nanowires were characterized using XRD, SEM, TEM, STEM, Elemental mapping, HRTEM, and XPS. The effect of deposition parameters such as oxygen partial pressure, growth temperature, catalyst layer thickness, evaporation rate of Sn, and the growth duration of nanowires were investigated. The SnO2 nanowires growth mechanism has been explained. Preliminary studies were made on the possible use of pure SnO2 and doped SnO2 nanowire films for UV light detection. SnO2 nanowire growth on different substrates such as stainless steel foil (SS), carbon nanosheets films, and graphene oxide films were studied. SnO2 nanowire growth on different substrates, especially SS foil will be useful for Li-ion battery applications. Chapter 6 This chapter discusses the self catalyzed VLS growth of Sn doped Indium oxide (ITO) nanowires by the electron beam evaporation method at a low temperature of 250-400 °C. The grown nanowires were characterized using XRD, SEM, TEM, STEM, HRTEM, and XPS. The effect of deposition parameters such as oxygen partial pressure, growth temperature, evaporation rate of ITO, and the growth duration of the nanowires were investigated. Preliminary studies were also made on the possible use of self-catalyzed ITO nanowire films for transparent conducting oxides and antireflection coatings. ITO nanowire growth on different and large area substrates such as stainless steel foil (SS), and Glass was done successfully. ITO nanowire growth on different substrates, especially large area glass substrates will be useful for optoelectronic devices. Chapter 7 In this chapter, studies on the growth of SnO2 nanowires by a cost-effective resistive thermal evaporation method at a relatively lower substrate temperature of 450 °C are presented. The grown nanowires were characterized using XRD, SEM, TEM, HRTEM, and XPS. Preliminary studies were done on the possible use of SnO2 nanowire films for methanol sensing. Chapter 8 This chapter discusses the self-catalytic growth of SnO2 and In2O3 nanowires by resistive thermal evaporation. The nanowires of SnO2 and In2O3 were grown at low temperatures by resistive thermal evaporation using a modified source and substrate arrangement. In this arrangement, branched SnO2 nanowires, and In2O3 nanowires growth was observed. The grown nanowires were characterized using XRD, SEM, TEM, HRTEM, and XPS. The possible growth mechanism for branched nanowires growth has been explained. Chapter 9 The significant results obtained in the present thesis work have been summarized in this chapter.

Recently, there has been a growing interest in semiconductor and semiconducting oxide nanowires for applications in electronics, energy conversion, energy storage and optoelectronic devices such as field effect transistors, solar cells, Li- ion batteries, gas sensors, light emitting diodes, field emission displays etc. Semiconductor and semiconducting oxide nanowires have been synthesized widely by different vapor transport methods. However, conditions like high growth temperature, low vacuum, carrier gases for the growth of nanowires, limit the applicability of the processes for the growth of nanowires on a large scale for different applications. In this thesis work, studies have been made on the growth of semiconductor and semiconducting oxide nanowires at a relatively lower substrate temperature (< 500 °C), in a high vacuum (1× 10-5 mbar), without employing any carrier gas, by electron beam and resistive thermal evaporation processes. The morphology, microstructure, and composition of the nanowires have been investigated using analytical techniques such as SEM, EDX, XRD, XPS, and TEM. The optical properties of the films such as reflectance, transmittance in the UV-visible and near IR region were studied using a spectrophotometer. Germanium nanowires were grown at a relatively lower substrate temperature of 380-450 °C on Si substrates by electron beam evaporation (EBE) process using a Au-assisted Vapor-Liquid-Solid mechanism. High purity Ge was evaporated in a high vacuum of 1× 10-5 mbar, and gold catalyst coated substrates maintained at a temperature of 380-450 °C resulted in the growth of germanium nanowires via Au-catalyzed VLS growth. The influence of deposition parameters such as the growth temperature, Ge evaporation rate, growth duration, and gold catalyst layer thickness has been investigated. The structural, morphological and compositional studies have shown that the grown nanowires were single-crystalline in nature and free from impurities. The growth mechanism of Germanium nanowires by EBE has been discussed. Studies were also made on Silicon nanowire growth with Indium and Bismuth as catalysts by electron beam evaporation. For the first time, silicon nanowires were grown with alternative catalysts by the e-beam evaporation method. The use of alternative catalysts such as Indium and Bismuth results in the decrease of nanowire growth temperature compared to Au catalyzed Si nanowire growth. The doping of the silicon nanowires is possible with an alternative catalyst. The second part of the thesis concerns the growth of oxide semiconductors such as SnO2, Sn doped Indium oxide (ITO) nanowires by the electron beam evaporation method. For the first time, SnO2 nanowires were grown with a Au-assisted VLS mechanism by the electron beam evaporation method at a low substrate temperature of 450 °C. SEM, XRD, XPS, TEM, EDS studies on the grown nanowires showed that they were single crystalline in nature and free of impurities. The influence of deposition parameters such as the growth temperature, oxygen partial pressure, evaporation rate of Sn, and the growth duration has been investigated. Studies were also done on the application of SnO2 nanowire films for UV light detection. ITO nanowires were grown via a self-catalytic VLS growth mechanism by electron beam evaporation without the use of any catalyst at a low substrate temperature of 250-400 °C. The influence of deposition parameters such as the growth temperature, oxygen partial pressure, evaporation rate of ITO, and growth duration has been investigated. Preliminary studies have been done on the application of ITO nanowire films for transparent conducting coatings as well as for antireflection coatings. The final part of the work is on the Au-assisted and self catalytic growth of SnO2 and In2O3 nanowires on Si substrates by resistive thermal evaporation. For the first time, SnO2 nanowires were grown with a Au-assisted VLS mechanism by the resistive thermal evaporation method at a low substrate temperature of 450 °C. SEM, XRD, XPS, TEM, and EDS studies on the grown nanowires showed that they were single crystalline in nature and free of impurities. Studies were also made on the application of SnO2 nanowire films for methanol sensing. The self-catalytic growth of SnO2 and In2O3 nanowires were deposited in high vacuum (5×10-5 mbar) by thermal evaporation using a modified evaporation source and a substrate arrangement. With this arrangement, branched SnO2 and In2O3 nanowires were grown on a Si substrate. The influence of deposition parameters such as the applied current to the evaporation boat, and oxygen partial pressure has been investigated. The growth mechanism behind the formation of the branched nanowires as well as nanowires has been explained on the basis of a self-catalytic vapor-liquid-solid growth mechanism. The highlight of this thesis work is employing e-beam evaporation and resistive thermal evaporation methods for nanowire growth at low substrate temperatures of ~ 300-500 °C. The grown nanowires were tested for applications such as gas sensing, transparent conducting coatings, UV light detection and antireflection coating etc. The thesis is divided into nine chapters and each of its content is briefly described below. Chapter 1 In this chapter, a brief introduction is given on nanomaterials and their applications. This chapter also gives an overview of the different techniques and different growth mechanisms used for nanowires growth. A brief overview of the applications of semiconductors and semiconductor oxide nanowires synthesized is also presented. Chapter 2 Different experimental techniques employed for the growth of Si, Ge, SnO2, In2O3, ITO nanowires have been described in detail in this chapter. Further, the details of the different techniques employed for the characterization of the grown nanowires were also presented. Chapter 3 In this chapter, studies on the growth of Germanium nanowires by electron beam evaporation (EBE) are given. The influence of deposition parameters such as growth temperature, evaporation rate of germanium, growth duration, and catalyst layer thickness was investigated. The morphology, structure, and composition of the nanowires were investigated by XRD, SEM, and TEM. The VLS growth mechanism has been discussed for the formation of the germanium nanowires by EBE using Au as a catalyst. Chapter 4 This chapter discusses the growth of Si nanowires with Indium and Bismuth as an alternate to Au-catalyst by electron beam evaporation. The influence of deposition parameters such as growth temperature, Si evaporation rate, growth duration, and catalyst layer thickness has been investigated. The grown nanowires were characterized using XRD, SEM, TEM and HRTEM. The Silicon nanowires growth mechanism has been discussed. Chapter 5 This chapter discusses the Au-catalyzed VLS growth of SnO2 nanowires by the electron beam evaporation method as well as Antimony doped SnO2 nanowires by co-evaporation method at a low substrate temperature of 450 °C. The grown nanowires were characterized using XRD, SEM, TEM, STEM, Elemental mapping, HRTEM, and XPS. The effect of deposition parameters such as oxygen partial pressure, growth temperature, catalyst layer thickness, evaporation rate of Sn, and the growth duration of nanowires were investigated. The SnO2 nanowires growth mechanism has been explained. Preliminary studies were made on the possible use of pure SnO2 and doped SnO2 nanowire films for UV light detection. SnO2 nanowire growth on different substrates such as stainless steel foil (SS), carbon nanosheets films, and graphene oxide films were studied. SnO2 nanowire growth on different substrates, especially SS foil will be useful for Li-ion battery applications. Chapter 6 This chapter discusses the self catalyzed VLS growth of Sn doped Indium oxide (ITO) nanowires by the electron beam evaporation method at a low temperature of 250-400 °C. The grown nanowires were characterized using XRD, SEM, TEM, STEM, HRTEM, and XPS. The effect of deposition parameters such as oxygen partial pressure, growth temperature, evaporation rate of ITO, and the growth duration of the nanowires were investigated. Preliminary studies were also made on the possible use of self-catalyzed ITO nanowire films for transparent conducting oxides and antireflection coatings. ITO nanowire growth on different and large area substrates such as stainless steel foil (SS), and Glass was done successfully. ITO nanowire growth on different substrates, especially large area glass substrates will be useful for optoelectronic devices. Chapter 7 In this chapter, studies on the growth of SnO2 nanowires by a cost-effective resistive thermal evaporation method at a relatively lower substrate temperature of 450 °C are presented. The grown nanowires were characterized using XRD, SEM, TEM, HRTEM, and XPS. Preliminary studies were done on the possible use of SnO2 nanowire films for methanol sensing. Chapter 8 This chapter discusses the self-catalytic growth of SnO2 and In2O3 nanowires by resistive thermal evaporation. The nanowires of SnO2 and In2O3 were grown at low temperatures by resistive thermal evaporation using a modified source and substrate arrangement. In this arrangement, branched SnO2 nanowires, and In2O3 nanowires growth was observed. The grown nanowires were characterized using XRD, SEM, TEM, HRTEM, and XPS. The possible growth mechanism for branched nanowires growth has been explained. Chapter 9 The significant results obtained in the present thesis work have been summarized in this chapter.

碩士
國立臺灣科技大學
光電工程研究所
100
Tungsten oxide, has many interesting optical, electrical, structural, and chemical properties, are an ideal choice material for electrochromic smart windows devices. In this study, tungsten oxide thin films were prepared by the thermal oxidization on Tungsten/ITO/glass substrates at different heat-treatment temperatures. The optimum heat-treatment temperature, corresponding to the maximum electrochromic performance, was achieved by 550 oC. X-ray diffraction (XRD) analysis indicates that a tetragonal WO3 phase formed at temperatures below 550 oC and the phase transformed to monoclinic W18O49 after the temperature was raised to 650 oC. The electrical properties analysis confirmed that the highest electrical conductivity show the superior electrochromic performance, with the maximum coloration efficiency value of 60.4 cm2/C. The tetragonal WO3 films, with heat-treatment temperature 550 oC and 450 oC, exhibit good electrochromic properties such as a high diffusion coefficient (1.7x10-11), fast electrochromic response time (coloration time 1.6 s, bleaching time 1.2 s), and high coloration efficiency (60.4 cm2/C). Furthermore, tungsten oxide nanowires were prepared on a tungsten film (W)/ITO-glass substrate at 500 oC for electrochromic devices using the heat-treatment technique. The electrical properties analysis confirmed that the highest electrical conductivity achieve the superior electrochromic performance with the maximum coloration efficiency value. The tungsten oxide nanowires shows excellent electrochromic properties such as a higher diffusion coefficient (2x10-9), faster electrochromic response time (coloration time 1.7 s, bleaching time 1.1 s), and higher coloration efficiency (67.41 cm2/C) than other tungsten oxide films without nanowires. Therefore, the tungsten oxides nanowire prepared by heat-treatment technique, corresponding to the maximum electrochromic performance, would be further adopted in the commercial application of smart windows.

The ability to detect and quantify presence and concentration of unknown gasses is sought for applications ranging from environmental monitoring to medical analysis. Metal oxide based chemical sensing technology currently exists but the ability to provide a compositional gas breakdown reliably within a short time frame is not readily available. A very small sensor that can differentially identify the type and concentration of a gas is required. Novel methods of creating low cost and easily tuned one and two-dimensional gas sensing elements are explored. Tungsten trioxide has been thoroughly documented as an electrochromic coating, but highly sensitive WO3 elements with beam and nanowire structures have yet to be explored. Research of WO3 as a gas sensor encompasses three major components: A suitable sensing chamber with accurate analyte gas flow control and temperature control, a reliable method for WO3 deposition, and a high yield fabrication process. This thesis explores all three of these technologies. Chapter two starts with a summary of existing tungsten trioxide fabrication methods. An overview of WO3 processing follows. A comprehensive setup was designed and created to test the gas sensing response of a series of metal oxide based resistive elements through conductimetric analysis. Chapter three provides an in depth account of gas sensor test chamber design and testing. Critical test chamber aspects such as temperature control, precise gas flow control, highly efficient analyte gas switching and ease of use are presented. Chapter four outlines WO3 electrodeposition and the fabrication of beam structures for testing, while chapter five explores the templated electrodeposition of WO3 segments intercalated between gold nanowire segments. Finally, chapter six provides a summary of the research presented in this thesis as well as future directions and options available for further exploration of WO3 gas sensing elements.
Micro-Electro-Mechanical Systems (MEMS) and Nanosystems

碩士
建國科技大學
電子工程系暨研究所
99
This paper is a combination of titanium dioxide and zinc oxide nanowire thin films, synthesis of titanium dioxide / zinc oxide nanowire composite structure. Method for the first hydrothermal method (Hydrothermal method) growth of ZnO nanowires, and then by the sol - gel method (Sol-Gel method) of titanium dioxide films prepared by spin coating (Spin Coater) to the solution of titanium dioxide coating on the oxidation Zinc nanowire, so that a layer of zinc oxide nanoparticles coated with titanium dioxide material online, the formation of titanium dioxide / zinc oxide nanowires core-shell nanostructures. For titanium dioxide sol solution by use of thinner methods to experiment; observed from the measurement results, whether the shell of titanium dioxide with the parameters, the shell morphology of the trend and luminescent properties of the material. Measurement method, mainly in the FE-SEM observation of sample surface morphology observed by AFM the sample surface roughness and average grain size, crystal structure analysis by XRD and the lattice direction, and measured sample spectrum of light transmittance and reflectivity, TEM observation of core-shell structure to form and style of the observed fluorescence, photoluminescence for sample characteristics, EDS elemental composition measured sample composition. Finally, this thesis will be the process and process parameters, to do systematic research, while the synthesis of new nano-composite materials from products that do different physical properties, characteristics, optical analysis, the research results not only contribute to nuclear academic understanding of shell nanostructures, and each stage of the process of research from a variety of products manufactured nanomaterials can be used as research and explore the nature of the object. Keywords: sol - gel method、titanium dioxide thin film、hydrothermal method、ZnO nanowires、spin coating、core-shell structure.

Materials for studies related to nanoscience and nanotechnology have gained tremendous attention owing to their unique physical, chemical and electronic properties. Among various anisotropic nanostructures, one dimensional (1D) materials have received immense interest in numerous fields ranging from catalysis to electronics. Imparting multi-functionality to nanostructures is one of the major areas of research in materials science. In this direction, use of nanosized materials in energy systems such as fuel cells has been the subject of focus to achieve improved performance. Tuning the morphology of nanostructures, alloying of catalysts, dispersing catalytic particles onto various supports (carbon nanotubes, carbon nanofibers, graphene, etc.) are some of the ways to address issues related to electrochemical energy systems. It is worth mentioning that highly stable and corrosion resistant electrodes are mandatory as electrochemical cells operate under aggressive environments. Additionally, carbon, which is often used as a support for catalysts, is prone to corrosion and is subsequently implicated in reduced performance due to poor adherence of catalyst particles and loss in electrochemically active area. Hence, there is a quest for the development of stable and durable electrocatalysts / supports for various studies including fuel cells. The present thesis is structured in exploring the multi-functional aspects of titanium carbide (TiC), an early transition metal carbide. TiC, a fascinating material, possesses many favorable properties such as extreme hardness, high melting point, good thermal and electrical conductivity. Its metal-like conductivity and extreme corrosion resistance prompted us to use this material for various electrical and electrochemical studies. The current study explores the versatility of TiC in bulk as well as nanostructured forms, in electrical and electrochemical studies towards sensing, electrocatalytic reactions and active supports. 1D TiC nanowires (TiC-NW) are prepared by simple solvothermal method without use of any template and are characterized using various physico-chemical techniques. The TiC-NW comprise of 1D nanostructures with several µm length and 40 ± 15 nm diameter (figure 1). Electrical properties of individual TiC-NW are probed by fabricating devices using focused ion beam deposition (FIB) technique. The results depict the metallic nature of TiC-NW (figure 2). Figure 1. (a) SEM, (b) TEM and (c) HRTEM images of TiC-NW prepared by solvothermal method. Figure 2. (a) SEM image and (b) I-V characteristics of TiC-NW - based device as a function of temperature. The contact pads are made of Pt. Subsequently, oxidized TiC nanowires are prepared by thermal annealing of TiC-NW, leading to carbon - doped TiO2 nanowires (C-TiO2-NW) (figure 3). Photodetectors are fabricated with isolated C-TiO2-NW and the device is found to respond to visible light (figure 3) radiation with very good responsivity (20.5 A/W) and external quantum efficiency (2.7 X 104). The characteristics are quite comparable with several reported visible light photodetectors based on chalcogenide semiconductors. Figure 3. (a) HRTEM, (b) EDAX, (c) Scanning TEM-DF images of C-TiO2-NW along with (d) Ti (e) O and (f) C mapping. (g) Current – voltage curves of single C-TiO2-NW recorded in dark (black) and in presence of visible light radiation (red) of intensity 57.7 mW/cm2 at 25oC. Inset of (g) shows the SEM image of the device (top) and schematic illustration of fabricated photodetector (bottom). The next chapter deals with the electrochemical performance of TiC demonstrated for studies involving oxygen reduction and borohydride oxidation reactions. Electrochemical oxygen reduction reaction (ORR) reveal that TiC-NW possess high activity for ORR and involves four electron process while it is a two electron reduction for bulk TiC particles (figure 4). The data has been substantiated by density functional theory (DFT) calculations that reveal different modes of adsorption of oxygen on bulk and nanowire morphologies. Stable performance is observed for several hundreds of cycles that confirm the robustness of TiC. The study also demonstrates excellent selectivity of TiC for ORR in presence of methanol and thus cross-over issue can be effectively addressed in direct methanol fuel cells. In the chapter on borohydride oxidation, bare TiC electrode is explored as a catalyst for the oxidation of borohydride. One of the major issues in direct borohydride fuel cells (DBFC) is the hydrolysis of borohydride that happens on almost all electrode materials leading to low efficiency. The present study reveals that TiC is a very good catalyst for borohydride oxidation with little or no hydrolysis of borohydride [figure 5 (a)] under the experimental conditions studied. Further, shape dependant activity of TiC has been studied and fuel cell performance is followed [figure 5 (b)]. Polarization data suggests that the performance of TiC is quite stable under fuel cell experimental conditions. Figure 4. (a) Linear sweep voltammograms for ORR recorded using (i) bulk TiC particles and (ii) TiC-NW in O2-saturated 0.5 M KOH at 1000 rpm. Scan rate used is 0.005 Vs-1. (b) Variation of number of electrons with DC bias. Black dots correspond to TiC bulk particles while red ones represent nanowires. Figure 5. (a) Cyclic voltammograms of borohydride oxidation on TiC coated GC electrode in 1 M NaOH containing 0.1 M NaBH4. Scan rate used is 0.05 Vs-1. (b) Fuel cell polarization data at 70oC for DBFC assembled with (i) bulk TiC particles and (ii) TiC-NW as anode catalysts and 40 wt% Pt/C as cathode. Anolyte is 2.1 M NaBH4 in 2.5 M NaOH, and catholyte is 2.2 M H2O2 in 1.5 M H2SO4. Anode loading is 1.5 mg cm-2 and cathode loading is 2 mg cm-2. The corrosion resistance nature of TiC lends itself amenable to be used as an active support for catalytic particles (Pt and Pd) for small molecules oxidation reactions. In the present study, electro-oxidation of methanol, ethanol and formic acid have been studied. As shown in figure 6 (a), the performance of Pd loaded TiC (Pd-TiC) is found to be higher than that of Pd loaded carbon (Pd-C) suggesting the active role of TiC. The catalytic activities of TiC-based supports are further improved by tuning their morphologies. Figure 6 (c) reveals that the activities are higher in case of Pd-TiC-NW than that of Pd-TiC. Figure 6. (a) Cyclic voltammograms of Pd-TiC and Pd-C for ethanol oxidation, (b) T EM image of Pd-TiC-NW and (c) voltammograms of Pd-TiC-NW in N2-saturated 1 M ethanol in 1 M KOH medium, scan rate used is 0.05 Vs-1. The next aspect explored, is based on the preparation of C-TiO2 and its use as a substrate for surface enhanced Raman spectroscopy (SERS). Carbon doped titanium dioxide is prepared by thermal annealing of TiC. It is observed that the amount of dopant (carbon content) is dependent on the experimental conditions used. SERS studies using 4¬mercaptobenzoic acid (4-MBA) as the analyte, indicates that C-TiO2 [figure 7 (a)] enhances Raman signals based on chemical interactions between the analyte and the substrate. Raman signal intensities can be tuned with the amount of carbon content in C¬TiO2. Enhancement factors are calculated to be (7.7 ± 1.2) x 103 (for 4-MBA) and (1.7 ± 1.2) x 103 (for 4-nitrothiophenol). The SERS substrates are found to be surface renewable using visible light, a simple strategy to re-use the substrate [figure 7 (b)]. The regeneration of SERS substrates is based on self cleaning action of TiO2 that produces highly reactive oxygen containing radicals known to degrade the molecules adsorbed on TiO2. Thus, the versatility of TiC has been demonstrated with various studies. In addition to using TiC-based materials, nanoparticles of Rh, Ir and Rh-Ir alloy structures have also been used for borohydride oxidation reaction. This is explained in the last section. In Appendix-I, preliminary studies on the preparation of TiC-polyaniline (PANI) composites using liquid-liquid interfacial polymerization is explained. Raman spectroscopy results suggest that the presence of TiC-NW makes PANI to assume preferential orientation in the polaronic (conducting) form. Appendix-II discusses the role of TiC-NW as a fluorescence quencher for CdS semiconductor nanoparticles.

Materials for studies related to nanoscience and nanotechnology have gained tremendous attention owing to their unique physical, chemical and electronic properties. Among various anisotropic nanostructures, one dimensional (1D) materials have received immense interest in numerous fields ranging from catalysis to electronics. Imparting multi-functionality to nanostructures is one of the major areas of research in materials science. In this direction, use of nanosized materials in energy systems such as fuel cells has been the subject of focus to achieve improved performance. Tuning the morphology of nanostructures, alloying of catalysts, dispersing catalytic particles onto various supports (carbon nanotubes, carbon nanofibers, graphene, etc.) are some of the ways to address issues related to electrochemical energy systems. It is worth mentioning that highly stable and corrosion resistant electrodes are mandatory as electrochemical cells operate under aggressive environments. Additionally, carbon, which is often used as a support for catalysts, is prone to corrosion and is subsequently implicated in reduced performance due to poor adherence of catalyst particles and loss in electrochemically active area. Hence, there is a quest for the development of stable and durable electrocatalysts / supports for various studies including fuel cells. The present thesis is structured in exploring the multi-functional aspects of titanium carbide (TiC), an early transition metal carbide. TiC, a fascinating material, possesses many favorable properties such as extreme hardness, high melting point, good thermal and electrical conductivity. Its metal-like conductivity and extreme corrosion resistance prompted us to use this material for various electrical and electrochemical studies. The current study explores the versatility of TiC in bulk as well as nanostructured forms, in electrical and electrochemical studies towards sensing, electrocatalytic reactions and active supports. 1D TiC nanowires (TiC-NW) are prepared by simple solvothermal method without use of any template and are characterized using various physico-chemical techniques. The TiC-NW comprise of 1D nanostructures with several µm length and 40 ± 15 nm diameter (figure 1). Electrical properties of individual TiC-NW are probed by fabricating devices using focused ion beam deposition (FIB) technique. The results depict the metallic nature of TiC-NW (figure 2). Figure 1. (a) SEM, (b) TEM and (c) HRTEM images of TiC-NW prepared by solvothermal method. Figure 2. (a) SEM image and (b) I-V characteristics of TiC-NW - based device as a function of temperature. The contact pads are made of Pt. Subsequently, oxidized TiC nanowires are prepared by thermal annealing of TiC-NW, leading to carbon - doped TiO2 nanowires (C-TiO2-NW) (figure 3). Photodetectors are fabricated with isolated C-TiO2-NW and the device is found to respond to visible light (figure 3) radiation with very good responsivity (20.5 A/W) and external quantum efficiency (2.7 X 104). The characteristics are quite comparable with several reported visible light photodetectors based on chalcogenide semiconductors. Figure 3. (a) HRTEM, (b) EDAX, (c) Scanning TEM-DF images of C-TiO2-NW along with (d) Ti (e) O and (f) C mapping. (g) Current – voltage curves of single C-TiO2-NW recorded in dark (black) and in presence of visible light radiation (red) of intensity 57.7 mW/cm2 at 25oC. Inset of (g) shows the SEM image of the device (top) and schematic illustration of fabricated photodetector (bottom). The next chapter deals with the electrochemical performance of TiC demonstrated for studies involving oxygen reduction and borohydride oxidation reactions. Electrochemical oxygen reduction reaction (ORR) reveal that TiC-NW possess high activity for ORR and involves four electron process while it is a two electron reduction for bulk TiC particles (figure 4). The data has been substantiated by density functional theory (DFT) calculations that reveal different modes of adsorption of oxygen on bulk and nanowire morphologies. Stable performance is observed for several hundreds of cycles that confirm the robustness of TiC. The study also demonstrates excellent selectivity of TiC for ORR in presence of methanol and thus cross-over issue can be effectively addressed in direct methanol fuel cells. In the chapter on borohydride oxidation, bare TiC electrode is explored as a catalyst for the oxidation of borohydride. One of the major issues in direct borohydride fuel cells (DBFC) is the hydrolysis of borohydride that happens on almost all electrode materials leading to low efficiency. The present study reveals that TiC is a very good catalyst for borohydride oxidation with little or no hydrolysis of borohydride [figure 5 (a)] under the experimental conditions studied. Further, shape dependant activity of TiC has been studied and fuel cell performance is followed [figure 5 (b)]. Polarization data suggests that the performance of TiC is quite stable under fuel cell experimental conditions. Figure 4. (a) Linear sweep voltammograms for ORR recorded using (i) bulk TiC particles and (ii) TiC-NW in O2-saturated 0.5 M KOH at 1000 rpm. Scan rate used is 0.005 Vs-1. (b) Variation of number of electrons with DC bias. Black dots correspond to TiC bulk particles while red ones represent nanowires. Figure 5. (a) Cyclic voltammograms of borohydride oxidation on TiC coated GC electrode in 1 M NaOH containing 0.1 M NaBH4. Scan rate used is 0.05 Vs-1. (b) Fuel cell polarization data at 70oC for DBFC assembled with (i) bulk TiC particles and (ii) TiC-NW as anode catalysts and 40 wt% Pt/C as cathode. Anolyte is 2.1 M NaBH4 in 2.5 M NaOH, and catholyte is 2.2 M H2O2 in 1.5 M H2SO4. Anode loading is 1.5 mg cm-2 and cathode loading is 2 mg cm-2. The corrosion resistance nature of TiC lends itself amenable to be used as an active support for catalytic particles (Pt and Pd) for small molecules oxidation reactions. In the present study, electro-oxidation of methanol, ethanol and formic acid have been studied. As shown in figure 6 (a), the performance of Pd loaded TiC (Pd-TiC) is found to be higher than that of Pd loaded carbon (Pd-C) suggesting the active role of TiC. The catalytic activities of TiC-based supports are further improved by tuning their morphologies. Figure 6 (c) reveals that the activities are higher in case of Pd-TiC-NW than that of Pd-TiC. Figure 6. (a) Cyclic voltammograms of Pd-TiC and Pd-C for ethanol oxidation, (b) T EM image of Pd-TiC-NW and (c) voltammograms of Pd-TiC-NW in N2-saturated 1 M ethanol in 1 M KOH medium, scan rate used is 0.05 Vs-1. The next aspect explored, is based on the preparation of C-TiO2 and its use as a substrate for surface enhanced Raman spectroscopy (SERS). Carbon doped titanium dioxide is prepared by thermal annealing of TiC. It is observed that the amount of dopant (carbon content) is dependent on the experimental conditions used. SERS studies using 4¬mercaptobenzoic acid (4-MBA) as the analyte, indicates that C-TiO2 [figure 7 (a)] enhances Raman signals based on chemical interactions between the analyte and the substrate. Raman signal intensities can be tuned with the amount of carbon content in C¬TiO2. Enhancement factors are calculated to be (7.7 ± 1.2) x 103 (for 4-MBA) and (1.7 ± 1.2) x 103 (for 4-nitrothiophenol). The SERS substrates are found to be surface renewable using visible light, a simple strategy to re-use the substrate [figure 7 (b)]. The regeneration of SERS substrates is based on self cleaning action of TiO2 that produces highly reactive oxygen containing radicals known to degrade the molecules adsorbed on TiO2. Thus, the versatility of TiC has been demonstrated with various studies. In addition to using TiC-based materials, nanoparticles of Rh, Ir and Rh-Ir alloy structures have also been used for borohydride oxidation reaction. This is explained in the last section. In Appendix-I, preliminary studies on the preparation of TiC-polyaniline (PANI) composites using liquid-liquid interfacial polymerization is explained. Raman spectroscopy results suggest that the presence of TiC-NW makes PANI to assume preferential orientation in the polaronic (conducting) form. Appendix-II discusses the role of TiC-NW as a fluorescence quencher for CdS semiconductor nanoparticles.