Relevant bibliographies by topics / Tin oxide nanowire

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Academic literature on the topic 'Tin oxide nanowire'

Author: Grafiati
Published: 6 September 2023

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Journal articles on the topic "Tin oxide nanowire"

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Koo, B. R., J. W. Bae, and H. J. Ahn. "Improved Long-Term Stability of Transparent Conducting Electrodes Based on Double-Laminated Electrosprayed Antimony Tin Oxides and Ag Nanowires." Archives of Metallurgy and Materials 62, no. 2 (June 1, 2017): 1275–79. http://dx.doi.org/10.1515/amm-2017-0192.

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AbstractWe fabricated double-laminated antimony tin oxide/Ag nanowire electrodes by spin-coating and electrospraying. Compared to pure Ag nanowire electrodes and single-laminated antimony tin oxide/Ag nanowire electrodes, the double-laminated antimony tin oxide/Ag nanowire electrodes had superior transparent conducting electrode performances with sheet resistance ~19.8 Ω/□ and optical transmittance ~81.9%; this was due to uniform distribution of the connected Ag nanowires because of double lamination of the metallic Ag nanowires without Ag aggregation despite subsequent microwave heating at 250°C. They also exhibited excellent and superior long-term chemical and thermal stabilities and adhesion to substrate because double-laminated antimony tin oxide thin films act as the protective layers between Ag nanowires, blocking Ag atoms penetration.
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Li, Jun Shou, Xiao Juan Wu, Ming Yuan Wang, and Fang Zhao. "The Preparation Technology of SnO2 Nanowires Based on the System of Al-SnO-Cu2O." Advanced Materials Research 1058 (November 2014): 20–24. http://dx.doi.org/10.4028/www.scientific.net/amr.1058.20.

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Aluminum powder, stannous oxide powder and cuprous oxide powder are used for the preparation of tin oxide nanostructure in combustion synthesis-injection method with the formula designed using combinatorial chemistry method. The composition range of tin oxide nanostructure synthesis has been studied and the best formula of tin oxide nanowires synthesis has been screened. The research shows that the effective ingredient scope of tin oxide nanostructure is Al=30%~60%, CuO2=10%~50%, SnO=20% ~50% (mol), the main form of tin oxide nanostructure is nanowire and there are also forms such as nanorod, nanoparticle and nanobelt. The formula of tin oxide nanowire which leads to high yield, high purity and high conversion is Al:SnO:Cu2O=4:2:4(mol), the diameter of the tin oxide nanowires is within the range of 10~100 nm and most of them is from 40 to 60 nm, the highest conversion rate of SnO powder to SnO2 nanowire is 25.6%(mass), the tin oxide nanostructure synthesized by combustion synthesis-injection method has high purity, good dispensability, low preparation cost and it is also suitable for mass production.
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Wang, Yong, Liqiang Lu, and Fengdan Wu. "Indium Tin Oxide@Carbon Core–Shell Nanowire and Jagged Indium Tin Oxide Nanowire." Nanoscale Research Letters 5, no. 10 (July 17, 2010): 1682–85. http://dx.doi.org/10.1007/s11671-010-9695-x.

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Seong, Baekhoon, Ilkyeong Chae, Hyungdong Lee, Vu Dat Nguyen, and Doyoung Byun. "Spontaneous self-welding of silver nanowire networks." Physical Chemistry Chemical Physics 17, no. 12 (2015): 7629–33. http://dx.doi.org/10.1039/c5cp00035a.

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Gussenhoven, Ryan J., and Rosario A. Gerhardt. "Fabrication and Characterization of Antimony Tin Oxide Nanoparticle Networks Inside Polystyrene." MRS Proceedings 1552 (2013): 95–100. http://dx.doi.org/10.1557/opl.2013.711.

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AbstractRecently, there has been much interest in the creation of 3D networks of nanowires. One possible way to do this is to encase the nanowires inside transparent polymer matrices since there is also a demand for obtaining conducting transparent composites. If the filler of the composite is made from a strongly conducting material, the degree of connectivity of the networked nanowires can be tested by measuring its conductivity. Though much work has been done with ITO (Tin-doped indium oxide), little has been done with the chemically similar, but cheaper, ATO (Antimony-doped tin oxide). In this study, ATO nanoparticles were added into a polystyrene matrix and simultaneously pressed and heated so that a 3D network of the nanoparticles would form. The effecti veness of the conducting pseudo-nanowire networks was measured as the concentration of ATO in polystyrene was varied. Another variable utilized was the temperature at which the samples were pressed. The optical transmittance of the composites was also measured in order to quantify their transparency. It was found that, once the nanowire networks had percolated at a concentration of about 1.25 PHR, the conductivity and, consequently, the coherence of the networks increased at a decreasing rate as the concentration was increased. The effect of the pressing temperature was complex and required many additional sets of specimens to understand. Samples pressed at the highest temperature had the least coherent networks, as the polystyrene became too fluid and disrupted the ATO networks while at lower temperatures the opposite occurred. The optical transmittance dropped sharply as the concentration of ATO reached and surpassed 1.0 PHR. Nanowire networks were, indeed, formed through this process using these materials, but use as a conducting transparent composite in the visible range is unlikely as the percolation threshold occurs at a concentration greater than that of the optical transmittance drop, creating a trade-off between conductivity and transparency. The resistivity did drop as much as six orders of magnitude and may be useful for other applications.
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Das, Suprem R., Sajia Sadeque, Changwook Jeong, Ruiyi Chen, Muhammad A. Alam, and David B. Janes. "Copercolating Networks: An Approach for Realizing High-Performance Transparent Conductors using Multicomponent Nanostructured Networks." Nanophotonics 5, no. 1 (June 1, 2016): 180–95. http://dx.doi.org/10.1515/nanoph-2016-0036.

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Abstract Although transparent conductive oxides such as indium tin oxide (ITO) are widely employed as transparent conducting electrodes (TCEs) for applications such as touch screens and displays, new nanostructured TCEs are of interest for future applications, including emerging transparent and flexible electronics. A number of twodimensional networks of nanostructured elements have been reported, including metallic nanowire networks consisting of silver nanowires, metallic carbon nanotubes (m-CNTs), copper nanowires or gold nanowires, and metallic mesh structures. In these single-component systems, it has generally been difficult to achieve sheet resistances that are comparable to ITO at a given broadband optical transparency. A relatively new third category of TCEs consisting of networks of 1D-1D and 1D-2D nanocomposites (such as silver nanowires and CNTs, silver nanowires and polycrystalline graphene, silver nanowires and reduced graphene oxide) have demonstrated TCE performance comparable to, or better than, ITO. In such hybrid networks, copercolation between the two components can lead to relatively low sheet resistances at nanowire densities corresponding to high optical transmittance. This review provides an overview of reported hybrid networks, including a comparison of the performance regimes achievable with those of ITO and single-component nanostructured networks. The performance is compared to that expected from bulk thin films and analyzed in terms of the copercolation model. In addition, performance characteristics relevant for flexible and transparent applications are discussed. The new TCEs are promising, but significant work must be done to ensure earth abundance, stability, and reliability so that they can eventually replace traditional ITO-based transparent conductors.
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LIU, JUN, ZHEN LIU, KANGBAO LIN, and AIXIANG WEI. "SYNTHESIS OF SUB-10 NM TiO2 NANOWIRES FOR THE APPLICATION OF DYE-SENSITIZED SOLAR CELLS." Functional Materials Letters 06, no. 02 (April 2013): 1350017. http://dx.doi.org/10.1142/s1793604713500173.

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Highly oriented single-crystalline rutile TiO2 nanowires on transparent conductive fluorine-doped tin oxide (FTO) substrates are prepared by low-temperature hydrothermal method. The small lattice mismatch between FTO substrate and rutile TiO2 promote the epitaxial nucleation and growth of rutile TiO2 nanowires on FTO, with the diameter of 4–6 nm. Due to Van der waals force, the ultrafine nanowires tend to gather together, forming nanowire bundles. Using the ultrafine nanowire bundle array as the photoanode and ruthenium complex (N719) as the sensitizer, dye-sensitized solar cells (DSSCs) are assembled. The effect of the TiO2 nanowire gathering on the power conversion of the DSSCs has been investigated. Experimental result shows that the light-to-electricity conversion efficiency is increased by reducing the gathering of the nanowires through introducing toluene into reactant precursors. The DSSCs based on the bundles with smallest average width (i.e., least nanowire gathering) show the highest power conversion efficiency of 3.70%. The relatively high energy conversion efficiency is contributed to the large surface area, which enhances the adsorption of dye molecules.
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Son, Seung-Rak, and Jun Hyup Lee. "Vertical Alignment of Nematic Liquid Crystals Based on Spontaneous Alignment Layer Formation between Silver Nanowire Networks and Nonionic Amphiphiles." Crystals 10, no. 10 (October 9, 2020): 913. http://dx.doi.org/10.3390/cryst10100913.

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The vertical arrangement of nematic liquid crystals (LCs) in displays can be generally achieved by introducing a polyimide material onto indium tin oxide electrodes. However, this method requires multiple coating and deposition processes as well as high curing temperature, restricting the potential applicability to flexible displays. Thus, we herein propose the facile approach for homeotropic alignment of nematic LCs based on spontaneous alignment layer formation between silver nanowire networks and nonionic amphiphiles. The silver nanowires as transparent electrode materials were spin-coated on glass substrate and 4-(4-heptylphenyl)benzoic acids as nonionic amphiphiles were doped into the LC medium. The nonionic amphiphiles were spontaneously bonded to the polyvinylpyrrolidone capping layer of silver nanowire networks through polar interactions, creating the self-assembled alignment layer of nonionic amphiphiles on silver nanowire electrodes. In addition, the alkyl chains of the amphiphiles interacted with the LC molecules, leading to stable directional LC alignment along vertical direction. The electro-optical characteristics of the manufactured LC cell were comparable to those of conventional device including polyimide layer and indium tin oxide electrode. Overall, the combination of silver nanowire electrode and nonionic amphiphiles presents a new way to achieve the vertical alignment of nematic LCs without polyimide layer.
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Cui, Yang, Songqing Zhao, Xuan Xie, Jun Liu, and Hongjie Shi. "Preparation of Indium Tin Oxide Nanowires by Using physical-vapor-transport method." Journal of Physics: Conference Series 2254, no. 1 (April 1, 2022): 012023. http://dx.doi.org/10.1088/1742-6596/2254/1/012023.

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Abstract This paper presents a physical-vapor-transport method for the growth of Indium Tin Oxide (ITO) nanowires. ITO nanowires were successfully fabricated by physical vapor transport method using gold nanoparticles as catalyst prepared by two methods. The effects of holding temperature and catalyst on the growth of ITO nanowires were investigated. The experimental results show that the longer ITO nanowires can be grown by increasing the holding temperature at 850 °C, increasing the proportion of carbon powder, and using gold nanoparticles catalyst with smaller particle size. The longest ITO nanowire we fabricated is as long as 45 μm. Our experiments show that the density and diameter of ITO nanowires can be controlled by controlling the density and diameter of gold nanoparticle catalysts. The smaller the nanoparticle diameter is, the easier it is to grow long ITO nanowires.
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Cui, Yang, Songqing Zhao, Xuan Xie, Jun Liu, and Hongjie Shi. "Preparation of Indium Tin Oxide Nanowires by Using physical-vapor-transport method." Journal of Physics: Conference Series 2254, no. 1 (April 1, 2022): 012023. http://dx.doi.org/10.1088/1742-6596/2254/1/012023.

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Abstract This paper presents a physical-vapor-transport method for the growth of Indium Tin Oxide (ITO) nanowires. ITO nanowires were successfully fabricated by physical vapor transport method using gold nanoparticles as catalyst prepared by two methods. The effects of holding temperature and catalyst on the growth of ITO nanowires were investigated. The experimental results show that the longer ITO nanowires can be grown by increasing the holding temperature at 850 °C, increasing the proportion of carbon powder, and using gold nanoparticles catalyst with smaller particle size. The longest ITO nanowire we fabricated is as long as 45 μm. Our experiments show that the density and diameter of ITO nanowires can be controlled by controlling the density and diameter of gold nanoparticle catalysts. The smaller the nanoparticle diameter is, the easier it is to grow long ITO nanowires.
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Dissertations / Theses on the topic "Tin oxide nanowire"

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Shukla, Gyanendra Prakash. "Effect of symthesis parameters on the structural properties of thermally grown tin oxide nanowire." Thesis, IIT Delhi, 2015. http://localhost:8080/iit/handle/2074/6929.

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Kumar, Surajit. "Fluidic and dielectrophoretic manipulation of tin oxide nanobelts." Diss., Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/34851.

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Nanobelts are a new class of semiconducting metal oxide nanowires with great potential for nanoscale devices. The present research focuses on the manipulation of SnO₂ nanobelts suspended in ethanol using microfluidics and electric fields. Dielectrophoresis (DEP) was demonstrated for the first time on semiconducting metal oxide nanobelts, which also resulted in the fabrication of a multiple nanobelt device. Detailed and direct real-time observations of the wide variety of nanobelt motions induced by DEP forces were conducted using an innovative setup and an inverted optical microscope. High AC electric fields were generated on a gold microelectrode (~ 20 µm gap) array, patterned on glass substrate, and covered by a ~ 10 µm tall PDMS (polydimethylsiloxane) channel, into which the nanobelt suspension was introduced for performing the DEP experiments. Negative DEP (repulsion) of the nanobelts was observed in the low frequency range (< 100 kHz) of the applied voltage, which caused rigid body motion as well as deformation of the nanobelts. In the high frequency range (~ 1 MHz - 10 MHz), positive DEP (attraction) of the nanobelts was observed. Using a parallel plate electrode arrangement, evidence of electrophoresis was also found for DC and low frequency (Hz) voltages. The existence of negative DEP effect is unusual considering the fact that if bulk SnO₂ conductivity and permittivity values are used in combination with ethanol properties to calculate the Clausius Mossotti factor using the simple dipole approximation theory; it predicts positive DEP for most of the frequency range experimentally studied. A fluidic nanobelt alignment technique was studied and used in the fabrication of single nanobelt devices with small electrode gaps. These devices were primarily used for conducting impedance spectroscopy measurements to obtain an estimate of the nanobelt electrical conductivity. Parametric numerical studies were conducted using COMSOL Multiphysics software package to understand the different aspects of the DEP phenomenon in nanobelts. The DEP induced forces and torques were computed using the Maxwell Stress Tensor (MST) approach. The DEP force on the nanobelt was calculated for a range of nanobelt conductivity values. The simulation results indicate that the experimentally observed behavior can be explained if the nanobelt is modeled as having two components: an electrically conductive interior and a nonconductive outer layer surrounding it. This forms the basis for an explanation of the negative DEP observed in SnO₂ nanobelts suspended in ethanol. It is thought that the nonconductive layer is due to depletion of the charge carriers from the nanobelt surface regions. This is consistent with the fact that surface depletion is a commonly observed phenomenon in SnO₂ and other semiconducting metal oxide materials. The major research contribution of this work is that, since nanostructures have large surface areas, surface dominant properties are important. Considering only bulk electrical properties can predict misleading DEP characteristics.
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Zhang, Kelvin Hongliang. "Structural and electronic investigations of In₂O₃ nanostructures and thin films grown by molecular beam epitaxy." Thesis, University of Oxford, 2011. http://ora.ox.ac.uk/objects/uuid:de125918-b36f-47cc-b72d-2f3a27a96488.

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Transparent conducting oxides (TCOs) combine optical transparency in the visible region with a high electrical conductivity. In2O3 doped with Sn (widely, but somewhat misleadingly, known as indium tin oxide or ITO) is at present the most important TCO, with applications in liquid crystal displays, touch screen displays, organic photovoltaics and other optoelectronic devices. Surprisingly, many of its fundamental properties have been the subject of controversy or have until recently remained unknown, including even the nature and magnitude of the bandgap. The technological importance of the material and the renewed interest in its basic physics prompted the research described in this thesis. This thesis aims (i) to establish conditions for the growth of high-quality In2O3 nanostructures and thin films by oxygen plasma assisted molecular beam epitaxy and (ii) to conduct comprehensive investigations on both the surface physics of this material and its structural and electronic properties. It was demonstrated that highly ordered In2O3 nanoislands, nanorods and thin films can be grown epitaxially on (100), (110) and (111) oriented Y-stabilized ZrO2 substrates respectively. The mismatch with this substrate is -1.7%, with the epilayer under tensile strain. On the basis of ab initio density functional theory calculations, it was concluded that the striking influence of substrate orientation on the distinctive growth modes was linked to the fact that the surface energy for the (111) surface is much lower than for either polar (100) or non-polar (110) surfaces. The growth of In2O3(111) thin films was further explored on Y-ZrO2(111) substrates by optimizing the growth temperature and film thickness. Very thin In2O3 epilayers (35 nm) grew pseudomorphically under high tensile strain, caused by the 1.7% lattice mismatch with the substrate. The strain was gradually relaxed with increasing film thickness. High-quality films with a low carrier concentration (5.0  1017 cm-3) and high mobility (73 cm2V-1s-1) were obtained in the thickest films (420 nm) after strain relaxation. The bandgap of the thinnest In2O3 films was around 0.1 eV smaller than that of the bulk material, due to reduction of bonding-antibonding interactions associated with lattice expansion. The high-quality surfaces of the (111) films allowed us to investigate various aspects of the surface structural and electronic properties. The atomic structure of In2O3 (111) surface was determined using a combination of scanning tunnelling microscopy, analysis of intensity/voltage curves in low energy electron diffraction and first-principles ab initio calculations. The (111) termination has an essentially bulk terminated (1 × 1) surface structure, with minor relaxations normal to the surface. Good agreement was found between the experimental surface structure and that derived from ab initio density functional theory calculations. This work emphasises the benefits of a multi-technique approach to determination of surface structure. The electronic properties of In2O3(111) surfaces were probed by synchrotron-based photoemission spectroscopy using photons with energies ranging from the ultraviolet (6 eV) to the hard X-ray regime (6000 eV) to excite the spectra. It has been shown that In2O3 is a highly covalent material, with significant hybridization between O and In orbitals in both the valence and the conduction bands. A pronounced electron accumulation layer presents itself at the surfaces of undoped In2O3 films with very low carrier concentrations, which results from the fact the charge neutrality level of In2O3 lies well above the conduction band minimum. The pronounced electron accumulation associated with a downward band bending in the near surface region creates a confining potential well, which causes the electrons in the conduction band become quantized into two subband states, as observed by angle resolved photoemission spectra (ARPES) Fermi surface mapping. The accumulation of high density of electrons near to the surface region was found to shrink the surface band gap through many body interactions. Finally epitaxial growth of In2O3 thin films on α-Al2O3(0001) substrates was investigated. Both the stable body centred cubic phase and the metastable hexagonal corundum In2O3 phase can be stabilized as epitaxial thin films, despite large mismatches with the substrate. The growth mode involves matching small but different integral multiples of lattice planes of the In2O3 and the substrate in a domain matching epitaxial growth mode.
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Tahiraj, Klein. "Piezoelectric force microscopy study on zinc tin oxide nanowires." Bachelor's thesis, Alma Mater Studiorum - Università di Bologna, 2019. http://amslaurea.unibo.it/19405/.

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Self-powered sensor devices could find widespread application to monitor personal health, automobiles or buildings. One of the most ubiquitous form of energy on which these devices could rely is vibrational energy. To convert this energy into electrical energy, the research is focusing on piezoelectric materials. Examples of these materials are ZnO or Zinc Tin Oxides (ZTO). Modelled into nanowires and incorporated into an elastomer at the University of Lisbon, these materials have been demonstrated to result in macroscopically efficient energy conversion. In this work, I use Piezoelectric Force Microscopy to characterize the piezoelectric response of a single ZTO nanowire, namely, to measure the component d33 of its piezoelectric strain tensor. P(VDF-TrFE) thin film, i.e. a material with well characterized piezoelectric proprieties, is used to calibrate the instrument sensitivity. The value I obtain for the d33 of the ZTO nanowire is 23.70±0.04pm/V. In order to use it as a reference, I perform a characterization also for a ZnO nanowire. The value I obtain is 10.36±0.03pm/V. The value for the ZTO nanowire is therefore about double that of the ZnO. This result certifies ZTO nanowires as good candidates for energy conversion in future self-powered devices.
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Young, Sheng-Yu. "DLC thin film assisted zinc oxide nanowires growth." College Park, Md.: University of Maryland, 2008. http://hdl.handle.net/1903/8613.

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Thesis (M.S.) -- University of Maryland, College Park, 2008.
Thesis research directed by: Dept. of Materials Science and Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.
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Yang, Rusen. "Oxide nanomaterials synthesis, structure, properties and novel devices /." Diss., Available online, Georgia Institute of Technology, 2007, 2007. http://etd.gatech.edu/theses/available/etd-06212007-161309/.

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Thesis (Ph. D.)--Materials Science and Engineering, Georgia Institute of Technology, 2008.
Peter J. Hesketh, Committee Member ; Zhong Lin Wang, Committee Chair ; C.P. Wong, Committee Member ; Robert L. Snyder, Committee Member ; Christopher Summers, Committee Member.
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Brown, Richard A. "Interaction of mammalian cells with ZnO nanowire arrays : towards a piconewton force sensor." Thesis, Swansea University, 2014. https://cronfa.swan.ac.uk/Record/cronfa43177.

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JASMIN, ALLADIN. "Oxide Memristive Devices." Doctoral thesis, Politecnico di Torino, 2016. http://hdl.handle.net/11583/2639136.

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Resistive switching in metal oxide materials has recently renewed the interest of many researchers due to the many application in non-volatile memory and neuromorphic computing. A memristor or a memristive device in general, is a device behaving as nonlinear resistor with memory which depends on the amount of charges that passes through it. A novel idea of combining the physical resistive switching phenomenon and the circuit-theoretic formalism of memristors was proposed in 2008. The physical mechanism on how resistive switching occurs is still under debate. A physical understanding of the switching phenomenon is of much importance in order to tailor specific properties for memory applications. To investigate the resistive switching in oxide materials, memristive devices were fabricated starting from materials processing: low-pressure chemical vapor deposition of ZnO nanowires (NWs), low-temperature atomic layer deposition (ALD) of TiO2 thin films and micro-pulse ALD of Fe2O3 thin films. The distinct geometry of ZnO NWs makes it possible to investigate the effect of the electrode material, surface states and compliance to the memristive properties. A simpler method of fabricating TiO2-based devices was explored using low-temperature atomic layer deposition. This approach is very promising for device application using photoresist and polymeric substrates without thermal degradation during and after device fabrication. ALD of pure phase Fe2O3 thin films was demonstrated using cyclic micro-pulses. Based on the performance of the fabricated devices, the oxide materials under this study have promising properties for the next-generation memory devices.
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Kernan, Forest Emerson. "Material Characterization of Zinc Oxide in Bulk and Nanowire Form at Terahertz Frequencies." PDXScholar, 2012. https://pdxscholar.library.pdx.edu/open_access_etds/510.

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Many new applications are being proposed and developed for use in the terahertz (THz) frequency region. Similarly, many new materials are being characterized for possible use in this area. Nanostructured forms are of particular interest since they may yield desirable properties, but they remain especially challenging to characterize. This work focuses on the characterization of zinc oxide (ZnO) in bulk and nanowire form. A method for characterizing nanostructures at THz by use of a parallel-plate waveguide (PPWG) is presented. This method is novel in that it is simple, both in theory and practice, and does not require the use of complex measurement techniques such as differential and double modulated terahertz time-domain spectroscopy (THz-TDS). To enable easy evaluation of the quality of the result the maximum deviation in the material response measurement is presented. The dielectric properties of bulk and nanowire ZnO as determined by THz-TDS measurements are reported, and the electrical conductivity extracted from both are presented for comparison. Experimental results are compared to the well established pseudo-harmonic phonon dielectric model. Shortcomings in the pseudo-harmonic phonon model are resolved when coupled with a modified Drude model. This work will enable the determination of THz material properties from nano-scale and very-thin film materials with better reliability and practicality than what has been possible until now.
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Martin, Christian Dominik. "Spatially resolved studies of the leakage current behavior of oxide thin-films." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2013. http://dx.doi.org/10.18452/16746.

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Im Laufe der Verkleinerungen integrierter Schaltungen ergab sich die Notwendigkeit der alternativen dielektrischen Materialen. Hohe Polarisierbarkeiten in diesen dielektrischen Dünnfilmen treten erst in hoch direktionalen kristallinen Phasen auf. Aufgrund der erschwerten Integrierbarkeit von epitaktischen, einkristallinen Oxidfilmen können nur poly-, beziehungsweise nanokristalle Filme eingesetzt werden. Diese sind jedoch mit hohen Leckströmen behaftet. Weil die Information in einer DRAM-Zelle als Ladung in einem Kondensator gespeichert wird ist der Verlust dieser Ladung durch Leckströme die Ursache für Informationsverluste. Die Frequenz der notwendigen Auffrischungszyklen einer DRAM-Zelle wird direkt durch die Leckströme bestimmt. Voraussetzungen für die Entwicklung neuer dielektrischer Materialien ist das Verständnis der zugrunde liegenden Ladungsträgertransportmechanismen und ein Verständnis der strukturellen Schichteigenschaften, welche zu diesen Leckströmen führen. Conductive atomic force Microscopy ist ein Rastersondenmethode mit der strukturelle Eigenschaften mit lokaler elektrischer Leitfähigkeit korreliert wird. Mit dieser Methode wurde in einer vergleichenden Studie die räumlichen Leckstromverteilungen untersucht. Und es wurde gezeigt, dass es genügt eine nicht geschlossene Zwischenschicht Aluminiumoxid in eine Zirkoniumdioxidschicht zu integrieren um die Leckströme signifikant zu reduzieren während eine ausreichend hohe Kapazität erhalten bleibt. Darüberhinaus wurde ein CAFM modifiziert und benutzt um das Schaltverhalten eines Siliziumnanodrahtschottkybarrierenfeleffektransistor in Abhängigkeit der Spitzenposition zu untersuchen. Es konnte experimentell bestätigt werden das die Schottkybarrieren den Ladungstransport in diesen Bauteilen kontrollieren. Darüber hinaus wurde ein proof-of-concept für eine umprogrammierbaren nichtflüchtigen Speicher, der auf Ladungsakkumulation und der resultierenden Bandverbiegung an den Schottkybarrieren basiert, gezeigt.
In the course of the ongoing downscaling of integrated circuits the need for alternative dielectric materials has arisen. The polarizability of these dielectric thin-films is highest in highly directional crystalline phases. Since epitaxial single crystalline oxide films are very difficult to integrate into the complex DRAM fabrication process, poly- or nanocrystalline thin-films must be used. However these films are prone to very high leakage currents. Since the information is stored as charge on a capacitor in the DRAM cell, the loss of this charge through leakage currents is the origin of information loss. The rate of the necessary refresh cycles is directly determined by these leakage currents. A fundamental understanding of the underlying charge carrier transport mechanisms and an understanding of the structural film properties leading to such leakage currents are essential to the development of new, dielectric thin-film materials. Conductive Atomic Force Microscopy (CAFM) is a scanning probe based technique which correlates structural film properties with local electrical conductivity. This method was used to examine the spatial distribution of leakage currents in a comparative study. I was shown that it is sufficient to include an unclosed interlayer of Aluminium oxide into a Zirconium dioxide film to significantly reduce leakage currents while maintaining a sufficiently high capacitance. Moreover, a CAFM was modified and used to examine the switching behavior of a silicon nanowire Schottky barrier field effect transistors in dependence of the probe position. It was proven experimentally that Schottky barriers control the charge carrier transport in these devices. In addition, a proof of concept for a reprogrammable nonvolatile memory device based on charge accumulation and band bending at the Schottky barriers was shown.
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Books on the topic "Tin oxide nanowire"

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Synthesis and characterization of oriented nanowires: Electrocrystallization of tetrathiafulvalene bromide at polymer-modified indium tin oxide surfaces. Ottawa: National Library of Canada, 2002.

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Book chapters on the topic "Tin oxide nanowire"

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Costas, Andreea, Nicoleta Preda, Camelia Florica, and Ionut Enculescu. "Metal Oxide Nanowires as Building Blocks for Optoelectronic Devices." In Nanowires - Recent Progress [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.94011.

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Metal oxide nanowires have become the new building blocks for the next generation optoelectronic devices due to their specific features such as quantum confinement and high aspect ratio. Thus, they can be integrated as active components in diodes, field effect transistors, photodetectors, sensors, solar cells and so on. ZnO, a n-type semiconductor with a direct wide band gap (3.3 eV) and CuO, a p-type semiconductor with a narrow band gap (1.2–1.5 eV), are two metal oxides which were recently in the spotlight of the researchers for applications in the optoelectronic devices area. Therefore, in this chapter we focused on ZnO and CuO nanowires, the metal oxides nanowire arrays being prepared by straightforward wet and dry methods. Further, in order to emphasize their intrinsic transport properties, lithographic and thin films deposition techniques were used to integrate single ZnO and CuO nanowires into diodes and field effect transistors.
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Bellet, Daniel, Dorina T. Papanastasiou, Joao Resende, Viet Huong Nguyen, Carmen Jiménez, Ngoc Duy Nguyen, and David Muñoz-Rojas. "Metallic Nanowire Percolating Network: From Main Properties to Applications." In Smart Nanosystems for Biomedicine, Optoelectronics and Catalysis. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.89281.

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There has been lately a growing interest into flexible, efficient and low-cost transparent electrodes which can be integrated for many applications. This includes several applications related to energy technologies (photovoltaics, lighting, supercapacitor, electrochromism, etc.) or displays (touch screens, transparent heaters, etc.) as well as Internet of Things (IoT) linked with renewable energy and autonomous devices. This associated industrial demand for low-cost and flexible industrial devices is rapidly increasing, creating a need for a new generation of transparent electrodes (TEs). Indium tin oxide has so far dominated the field of TE, but indium’s scarcity and brittleness have prompted a search into alternatives. Metallic nanowire (MNW) networks appear to be one of the most promising emerging TEs. Randomly deposited MNW networks, for instance, can present sheet resistance values below 10 Ω/sq., optical transparency of 90% and high mechanical stability under bending tests. AgNW or CuNW networks are destined to address a large variety of emerging applications. The main properties of MNW networks, their stability and their integration in energy devices are discussed in this contribution.
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Isabel Bento Rovisco, Ana, Rita Branquinho, Joana Vaz Pinto, Rodrigo Martins, Elvira Fortunato, and Pedro Barquinha. "Hydrothermal Synthesis of Zinc Tin Oxide Nanostructures for Photocatalysis, Energy Harvesting and Electronics." In Novel Nanomaterials [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.94294.

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The massification of Internet of Things (IoT) and Smart Surfaces has increased the demand for nanomaterials excelling at specific properties required for their target application, but also offering multifunctionality, conformal integration in multiple surfaces and sustainability, in line with the European Green Deal goals. Metal oxides have been key materials for this end, finding applications from flexible electronics to photocatalysis and energy harvesting, with multicomponent materials as zinc tin oxide (ZTO) emerging as some of the most promising possibilities. This chapter is dedicated to the hydrothermal synthesis of ZTO nanostructures, expanding the already wide potential of ZnO. A literature review on the latest progress on the synthesis of a multitude of ZTO nanostructures is provided (e.g., nanowires, nanoparticles, nanosheets), emphasizing the relevance of advanced nanoscale techniques for proper characterization of such materials. The multifunctionality of ZTO will also be covered, with special attention being given to their potential for photocatalysis, electronic devices and energy harvesters.
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Raghavan, Srinivasa. "TiO2 Nanostructures by Sol–Gel Processing." In Sol-Gel Method - Recent Advances [Working Title]. IntechOpen, 2023. http://dx.doi.org/10.5772/intechopen.111440.

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This book chapter discusses the versatile sol–gel processing technique that has been used to synthesize the nanostructures of titanium dioxide (TiO2) and their different morphologies. The sol–gel syntheses of different nanostructures of TiO2, namely TiO2 nanoparticles, nanocrystalline thin film, nanorods, nanofibers, nanowires, nanotubes, aerogels, and opals are described. These nanostructures have been characterized by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) whose images clearly depict the formation of the nanostructures. Some of the morphologies of nano-TiO2 such as nanorods, nanotubes, nanofibers, nanowires, have been synthesized by sol–gel process in combination with spin-coating, dip-coating, template, surfactant, diblock polymer, micelles, polystyrene. In comparison to the bulk TiO2, presence of porous and nanocrystalline morphologies has played a role in enhancing the performance in applications such as photovoltaics, photocatalysis, photocatalytic water-splitting, H2 storage, gas sensors, photochromic, opto-electronic, and electrochromic devices. The chapter concludes with challenges and practical concerns in using the sol–gel process to produce thin films of complex oxides, porous nanostructures, solid nanorods, nanotubes, which need to be addressed in future research efforts.
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"New Generation Transparent Conducting Electrode Materials for Solar Cell Technologies." In Materials for Solar Cell Technologies I, 86–128. Materials Research Forum LLC, 2021. http://dx.doi.org/10.21741/9781644901090-4.

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Transparent conducting electrodes (TCEs) play a vital role for the fabrication of solar cells and pivoted almost 50% of the total cost. Recently several materials have been identified as TCEs in solar cell applications. Still, indium tin oxide (ITO) based TCEs have dominated the market due to their outstanding optical transparency and electrical conductivity. However, inadequate availability of indium has increased the price of ITO based TCEs, which attracts the researchers to find alternative materials to make solar technology economical. In this regard, various kinds of conducting materials are available and synthesized worldwide with high electrical conductivity and optical transparency in order to find alternative to ITO based electrodes. Especially, new generation nanomaterials have opened a new window for the fabrication of cost effective TCEs. Carbon nanomaterials such as graphene, carbon nanotubes (CNTs), metal nanowires (MNWs) and metal mesh (MMs) based electrodes especially attracted the scientific community for fabrication of low cost photovoltaic devices. In addition to it, various conducting polymers such as poly (3, 4-ethylene dioxythiophene): poly (styrenesulfonate) (PEDOT:PSS) based TCEs have also showed their candidacy as an alternative to ITO based TCEs. Thus, the present chapter gives an overview on materials available for the TCEs and their possible use in the field of solar cell technology
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Tran, Hoang A., and Shankar B. Rananavare. "Synthesis and Characterization of n- and p-Doped Tin Oxide Nanowires for Gas Sensing Applications." In Nanoelectronic Device Applications Handbook, 615–26. CRC Press, 2017. http://dx.doi.org/10.1201/b15035-48.

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Conference papers on the topic "Tin oxide nanowire"

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Zielke, Mark A., Andrew Morrill, Barry Demartini, Martin Moskovits, and Kimberly Turner. "Polymer Coated Tin Oxide Nanowires for Improved Sensitivity of MEMS Chemical Sensors Based on Microbeams." In ASME 2008 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2008. http://dx.doi.org/10.1115/detc2008-49843.

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MEMS mass sensors are an important field of study for chemical and biological sensing. We utilize the massive surface area to volume ratio of tin oxide nanowires to improve the sensing characteristics of resonant cantilever gas sensors. The nanowires are grown onto released silicon cantilevers via the vapor liquid solid method, a type of chemical vapor deposition. Through intelligent catalyst placement the nanowires are grown selectively onto predefined surfaces of the cantilever. The increased surface area of our nanowire coatings provides greatly increased active binding area for analytes, while high quality factors are still achieved with this method. Our experiments actively monitor the removal of a silane self assembled monolayer from the sensor surface. Current nanowire coated sensors show a tenfold increase in sensitivity when compared to the bare sensors. We have functionalized the nanowires with a variety of polymer coatings. These functionalized sensors also show a substantial increase in sensitivity to the analytes. By varying the polymer coating applied to the nanowires, a sensor array can be generated that achieves gas recognition while having incorporated the increased sensitivity of the nanowire coatings.
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Johari, Anima, M. C. Bhatnagar, and V. Rana. "Low temperature tin oxide (SnO2) nanowire gas sensor." In 16th International Workshop on Physics of Semiconductor Devices, edited by Monica Katiyar, B. Mazhari, and Y. N. Mohapatra. SPIE, 2012. http://dx.doi.org/10.1117/12.924698.

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Koeck, A., T. Maier, A. Tischner, C. Edtmaier, C. Gspan, and G. Kothleitner. "Supersensitive Si-integrated tin oxide nanowire-sensors for gas detection." In ESSDERC 2008 - 38th European Solid-State Device Research Conference. IEEE, 2008. http://dx.doi.org/10.1109/essderc.2008.4681757.

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Köck, A., E. Brunet, G. C. Mutinati, T. Maier, and S. Steinhauer. "Tin oxide nanowire sensors for highly sensitive detection of the toxic gas H 2 S." In SPIE Defense, Security, and Sensing, edited by Tuan Vo-Dinh, Robert A. Lieberman, and Günter Gauglitz. SPIE, 2011. http://dx.doi.org/10.1117/12.883899.

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Aggarwal, Shruti, Maikel F. A. M. van Hest, John D. Perkins, and David S. Ginley. "Improving mechanical stability and electrical properties of silver nanowire films with a zinc tin oxide overcoat." In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925087.

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Prabaswara, Aditya, Jung-Wook Min, Malleswararao Tangi, Ram Chandra Subedi, Davide Priante, Tien Khee Ng, and Boon S. Ooi. "Growth of GaN nanowire on indium-tin-oxide coated fused silica for simultaneous transparency and conductivity (Conference Presentation)." In Gallium Nitride Materials and Devices XIV, edited by Hadis Morkoç, Hiroshi Fujioka, and Ulrich T. Schwarz. SPIE, 2019. http://dx.doi.org/10.1117/12.2508386.

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Kweon, Kyoungchun, and Seungchan Hong. "A Study on Flexible Transparent Electrode Materials for Touch Sensor." In WCX SAE World Congress Experience. 400 Commonwealth Drive, Warrendale, PA, United States: SAE International, 2023. http://dx.doi.org/10.4271/2023-01-0074.

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<div class="section abstract"><div class="htmlview paragraph">As the AVN display in the car interior becomes larger and located above the center fascia, the driver's visual visibility is becoming important. In addition, since an expensive touch sensor is installed, a transparent electrode cost reduction technology for a display touch sensor that can replace an indium material, which is an expensive rare metal, is required. In this paper, we developed new transparent electrode materials and manufacturing methods for the touch sensor film which light reflectance is low and flexible without a separate low-reflection multi-layer, so that the design freedom is high and the material cost is low. By optimizing the amount of fluorine doping ratio in tin oxide, excellent electrical conductivity and high optical transmittance are secured, and the surface reflectance is reduced by adjusting the diameter and length of the silver nanowire. As a result, it was shown that the AVN display image and font readability was improved. In addition, we verified that the material has probability to adoption to a curved and flexible display applications for future mobility based on autonomous driving.</div></div>
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Wong, K. K., M. K. Fung, Y. C. Sun, X. Y. Chen, Alan M. C. Ng, A. B. Djurišic, and W. K. Chan. "Synthesis of tin oxide, indium oxide and tin-doped indium oxide nanowires by chemical vapor deposition." In SPIE NanoScience + Engineering. SPIE, 2011. http://dx.doi.org/10.1117/12.892436.

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Afshar, M., D. Feili, H. Voellm, M. Straub, K. Koenig, and H. Seidel. "Nanoscale laser writing of Indium-Tin-Oxide nanowires." In 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS). IEEE, 2012. http://dx.doi.org/10.1109/nems.2012.6196813.

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Roos, N. "Self-organized growth of Indium-Tin-Oxide nanowires." In The 14th international winterschool on electronic properties of novel materials - molecular nanostructures. AIP, 2000. http://dx.doi.org/10.1063/1.1342546.

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