Relevant bibliographies by topics / THz spintronics

Academic literature on the topic 'THz spintronics'

Author: Grafiati
Published: 8 June 2024

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Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Journal articles on the topic "THz spintronics":

1

Wang, Maorong, Yifan Zhang, Leilei Guo, Mengqi Lv, Peng Wang, and Xia Wang. "Spintronics Based Terahertz Sources." Crystals 12, no. 11 (November 18, 2022): 1661. http://dx.doi.org/10.3390/cryst12111661.

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Terahertz (THz) sources, covering a range from about 0.1 to 10 THz, are key devices for applying terahertz technology. Spintronics-based THz sources, with the advantages of low cost, ultra-broadband, high efficiency, and tunable polarization, have attracted a great deal of attention recently. This paper reviews the emission mechanism, experimental implementation, performance optimization, manipulation, and applications of spintronic THz sources. The recent advances and existing problems in spintronic THz sources are fully present and discussed. This review is expected to be an introduction of spintronic terahertz sources for novices in this field, as well as a comprehensive reference for experienced researchers.
2

Huisman, Thomas Jarik, and Theo Rasing. "THz Emission Spectroscopy for THz Spintronics." Journal of the Physical Society of Japan 86, no. 1 (January 15, 2017): 011009. http://dx.doi.org/10.7566/jpsj.86.011009.

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3

Walowski, Jakob, and Markus Münzenberg. "Perspective: Ultrafast magnetism and THz spintronics." Journal of Applied Physics 120, no. 14 (October 14, 2016): 140901. http://dx.doi.org/10.1063/1.4958846.

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4

Buryakov, Arseniy, Pavel Avdeev, Dinar Khusyainov, Nikita Bezvikonnyy, Andreas Coclet, Alexey Klimov, Nicolas Tiercelin, Sergey Lavrov, and Vladimir Preobrazhensky. "The Role of Ferromagnetic Layer Thickness and Substrate Material in Spintronic Emitters." Nanomaterials 13, no. 11 (May 23, 2023): 1710. http://dx.doi.org/10.3390/nano13111710.

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In this article, we investigate optically induced terahertz radiation in ferromagnetic FeCo layers of varying thickness on Si and SiO2 substrates. Efforts have been made to account for the influence of the substrate on the parameters of the THz radiation generated by the ferromagnetic FeCo film. The study reveals that the thickness of the ferromagnetic layer and the material of the substrate significantly affect the generation efficiency and spectral characteristics of the THz radiation. Our results also emphasize the importance of accounting for the reflection and transmission coefficients of the THz radiation when analyzing the generation process. The observed radiation features correlate with the magneto-dipole mechanism, triggered by the ultrafast demagnetization of the ferromagnetic material. This research contributes to a better understanding of THz radiation generation mechanisms in ferromagnetic films and may be useful for the further development of THz technology applications in the field of spintronics and other related areas. A key discovery of our study is the identification of a nonmonotonic relationship between the radiation amplitude and pump intensity for thin films on semiconductor substrates. This finding is particularly significant considering that thin films are predominantly used in spintronic emitters due to the characteristic absorption of THz radiation in metals.
5

Telegin, Andrei, and Yurii Sukhorukov. "Magnetic Semiconductors as Materials for Spintronics." Magnetochemistry 8, no. 12 (November 29, 2022): 173. http://dx.doi.org/10.3390/magnetochemistry8120173.

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From the various aspects of spintronics the review highlights the area devoted to the creation of new functional materials based on magnetic semiconductors and demonstrates both the main physical phenomena involved and the technical possibilities of creating various devices: maser, p-n diode with colossal magnetoresistance, spin valve, magnetic lens, optical modulators, spin wave amplifier, etc. Particular attention is paid to promising research directions such as ultrafast spin transport and THz spectroscopy of magnetic semiconductors. Special care has been taken to include a brief theoretical background and experimental results for the new spintronics approach employing magnetostrictive semiconductors—strain-magnetooptics. Finally, it presents top-down approaches for magnetic semiconductors. The mechano-physical methods of obtaining and features of the physical properties of high-density nanoceramics based on complex magnetic oxides are considered. The potential possibility of using these nanoceramics as an absorber of solar energy, as well as in modulators of electromagnetic radiation, is shown.
6

Wang, Hang-Tian, Hai-Hui Zhao, Liang-Gong Wen, Xiao-Jun Wu, Tian-Xiao Nie, and Wei-Sheng Zhao. "High-performance THz emission: From topological insulator to topological spintronics." Acta Physica Sinica 69, no. 20 (2020): 200704. http://dx.doi.org/10.7498/aps.69.20200680.

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7

Lebrun, Romain. "Take Terahertz for a spin." EU Research Winter 2023, no. 36 (December 2023): 48–49. http://dx.doi.org/10.56181/vfzc7876.

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Despite important developments in photo-conductive switches and quantum cascade lasers for THz generation, THz technologies are used in only a few relatively niche applications. We spoke to Dr. Romain Lebrun, the project coordinator from Thales Research Center, about the work of the s-Nebula project in developing a new approach based on spintronics and exploring the potential applications of this emerging technology.
8

Agarwal, Rekha, Sandeep Kumar, Niru Chowdhury, Kacho Imtiyaz Ali Khan, Ekta Yadav, Sunil Kumar, and P. K. Muduli. "Strong impact of crystalline twins on the amplitude and azimuthal dependence of THz emission from epitaxial NiO/Pt." Applied Physics Letters 122, no. 8 (February 20, 2023): 082403. http://dx.doi.org/10.1063/5.0138949.

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Ultrafast generation of spin currents involving antiferromagnets is currently attracting tremendous interest. Here, we demonstrate broadband THz emission from a [111]-oriented NiO/Pt bilayer grown on MgO and Al2O3 substrates. The NiO films are grown by pulsed laser deposition, whereas the Pt films are grown by magnetron sputtering. While we obtained epitaxial films on both substrates, NiO films on the Al2O3 substrate showed the presence of crystalline twins. We show that the existence of crystalline twins reduces the THz amplitude by an order of magnitude while simultaneously dramatically changing the azimuthal dependency of the THz amplitude. The findings have significant implications for antiferromagnetic spintronics.
9

Tsybrii, Z. F., S. N. Danilov, J. V. Gumenjuk-Sichevska, N. N. Mikhailov, S. A. Dvoretskii, E. O. Melezhik, and F. F. Sizov. "Spintronics phenomena induced by THz radiation in narrow-gap HgCdTe thin films in an external constant electric field." Semiconductor Physics, Quantum Electronics and Optoelectronics 24, no. 02 (June 16, 2021): 185–91. http://dx.doi.org/10.15407/spqeo24.02.185.

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The responses of uncooled (T = 300 K) and cooled to T = 78 K antenna-coupled Hg1–xCdxTe-based narrow-gap thin-film photoconductors having large spin-orbit coupling and irradiated by the terahertz (THz) radiation (linearly or circularly polarized) have been investigated. Powerful THz radiation excitation causes photocurrents, which signs and magnitudes are controlled by orientation of antenna axes, an external constant electric field direction and orientation of the polarized (circular or linear) radiation electric field falling onto photoconductors. The observed effects seem to be caused by the spin currents observed in devices where spintronic effects are revealed. spintronic phenomena, photoconductors, THz radiation, HgCdTe.
10

Buryakov, Arseniy, Anastasia Gorbatova, Pavel Avdeev, Nikita Bezvikonnyi, Daniil Abdulaev, Alexey Klimov, Sergei Ovcharenko, and Elena Mishina. "Controlled Spintronic Emitter of THz Radiation on an Atomically Thin WS2/Silicon Substrate." Metals 12, no. 10 (October 6, 2022): 1676. http://dx.doi.org/10.3390/met12101676.

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The control and monitoring of the polarization of terahertz radiation are of interest for numerous applications. Here we present a simple controllable THz emitter with a small coercive magnetic field. It is based on a Co/WS2/silicon structure, in which the presence of uniaxial magnetic anisotropy caused by mechanical stress in a ferromagnetic film was found. Our results show that a ferromagnet/semiconductor emitter can become a technologically simple device for terahertz spintronics.
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Journal articles Dissertations / Theses Books

Dissertations / Theses on the topic "THz spintronics":

1

Eivarsson, Nils, Malin Bohman, Emil Grosfilley, and Axel Lundberg. "Design and Simulation of Terahertz Antenna for Spintronic Applications." Thesis, Uppsala universitet, Institutionen för materialvetenskap, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-412982.

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Spintronics is a spin-electronic field where the electron spinangular momentum, in conjunction with charge, is used to read andwrite information in magnetic sensors and logic circuits, e.g. hard disk drive (HDD), magnetic random access memory (MRAM) and broadband TeraHertz (THz) emitters. To realize the THz operations of the spin logic circuits THz manipulation of the magnetic state is pivotal. This THz manipulation of the magnetic state in anti-ferromagnetic magnetic materials can be realized by coupling the materials with THz antennas. On the other hand, these antennas enhance the THz amplitude of spin-electronic THz emitters when coupled with its output. Therefore, these THz antennas can not only be coupled with the input of magnetic logics to improve the efficiency of magnetic sate manipulation in logic devices but also with the output of the spintronic THz emitters to enhance the generated THz signal amplitude. In this project, we have examined four types of antennas: h-dipole, spiral, bow-tie, and a sub-THz antenna. All the antennas are placed on top of a MgO substrate material for simplicity. However, a bow-tie antenna is also fabricated on an antiferromagnetic substrate of TmFeO3 to check this antenna’s reliability to manipulate its magnetic state. We have studied the impact of antenna geometries on the generated electric field amplitude. We have optimized each antenna for maximum electric field norm profile, with an increase of 30% for the h-dipole and spiral antennas, and an increase of 100% for the bow-tie antenna. However, in this project we were not able to find any general conclusions about what geometrical parameters can further amplify the generated electric field. None of the antennas generated a large enough peak-to-peak electric field amplitude to manipulate the magnetic state of anti-ferromagnetic materials. However, they did successfully amplify the spintronic THz emitter output and could certainly be useful in that regard.
2

Kaushalya. "Ultrafast manipulation of magnetization using on-chip THz." Electronic Thesis or Diss., Université de Lorraine, 2021. http://www.theses.fr/2021LORR0173.

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Le besoin de dispositifs de stockage de mémoire a explosé au cours des dernières décennies, en particulier après le développement d'Internet. Ce besoin a atteint des sommets énormes au cours des deux dernières années, peu après la pandémie due au COVID-19. Les disques durs (HDD) sont connus pour avoir le potentiel de répondre aux demandes de stockage de données haute densité. Cette thèse traite de l'un des défis majeurs rencontrés au sein de la communauté spintronique pour améliorer la vitesse et la consommation d'énergie des dispositifs de mémoire. La vitesse de fonctionnement lors de l'écriture d'un bit magnétique dépend du mécanisme de commutation de magnétisation utilisé. Le mécanisme de commutation est lui-même dépendant des propriétés magnétiques intrinsèques de l'échantillon et de l'excitation induite de l'extérieur qui entraîne l'inversion du trépan magnétique 1. Dans cette thèse, nous nous concentrerons sur l'utilisation des excitations du couple spin-orbite (SOT) pour entraîner l'inversion, qui sont une approche relativement nouvelle mais rapide et économe en énergie par rapport à d'autres méthodes de pointe. La vitesse typique d'inversion de magnétisation à l'aide des SOT est de l'ordre de quelques nanosecondes, bien plus lente que la commutation longue de la picoseconde qui est possible avec les dispositifs de mémoire basés sur la charge 2. En fait, une vitesse d'inversion record avec des impulsions électriques aussi courtes que ~ 200 ps a été signalée par Garello et. al., 3 en 2011 en utilisant des SOT. Cette thèse rapporte des efforts supplémentaires pour accélérer l'inversion de l'aimantation de près de 2 ordres de grandeur en exploitant de tels SOT. Dans ce but, des impulsions électriques THz ont été générées via l'utilisation de commutateurs photoconducteurs Auston. Nous démontrons qu'une seule impulsion électrique de 6ps de large peut induire un SOT sur une couche ferromagnétique de Co d'une épaisseur de 1 nm et entraîner une inversion complète de l'aimantation. Une étude systématique pour comprendre les SOT dans le régime temporel picoseconde est également entreprise via l'utilisation de différentes nanostructures magnétiques. Dans les dispositifs à mémoire magnétique, une "tête de lecture" est utilisée pour lire les informations stockées dans le dispositif. Typiquement, dans les dispositifs spintroniques, des têtes de lecture à magnétorésistance géante (GMR) ou à magnétorésistance tunnel (TMR) sont utilisées pour de telles opérations. Dans cette thèse, nous rapportons également les tentatives de développement d'un capteur GMR fonctionnant en régime THz. Pour entreprendre les études susmentionnées, un montage expérimental optique et optoélectrique pompe-sonde a également été construit et un rapport détaillé de celui-ci est également fourni dans la thèse
The need for memory storage devices has skyrocketed over the last few decades especially after the development of the internet. This need has reached enormous heights in the past two years, soon after the pandemic due to COVID-19. Hard disk drives (HDDs) are known to have the potential to meet up with the high-density data storage demands. This thesis deals with one of the major challenges faced within the spintronic community to improve the speed and the energy consumption of memory devices.The speed of operation during the writing of a magnetic bit depends on the magnetization switching mechanism employed. The switching mechanism is itself dependent on the intrinsic magnetic properties of the sample and the externally induced excitation that drives the reversal of the magnetic bit 1. In this thesis, we will focus on the use of spin-orbit torque (SOT) excitations to drive the reversal, which is a relatively new but fast and energy-efficient approach in comparison with other state-of-the-art methods.The typical speed of magnetization reversal using SOTs is in the range of few nanoseconds, far slower than the picosecond-long switching that is possible with charge-based memory devices2. In fact, a record reversal speed with electrical pulses as short as ~200ps was reported by Garello et. al., 3 in 2011 using SOTs. This thesis reports further efforts to speed up the magnetization reversal by almost 2 orders of magnitude by exploiting such SOTs. To this aim, THz electrical pulses were generated via the use Auston photoconductive switches. We demonstrate that a single 6ps wide electrical pulse can induce a SOT to a 1nm thin Co ferromagnetic layer and result in a full magnetization reversal. A systematic study to understand SOTs in the picosecond time regime is also undertaken via using different magnetic nanostructures.In magnetic memory devices, a “read-head” is used to read the stored information in the device. Typically, in spintronic devices, giant magnetoresistance (GMR) or tunnel magnetoresistance (TMR) based read heads are used for such operations. In this thesis, we also report on the attempts of developing a GMR sensor working in the THz regime.To undertake the aforementioned studies, a pump-probe optical and optoelectrical experimental setup has also been built and a detailed report of the same is also provided in the thesis
3

Hawecker, Jacques. "Terahertz time resolved spectroscopy of Intersubband Polaritons and Spintronic Emitters." Electronic Thesis or Diss., Sorbonne université, 2021. http://www.theses.fr/2021SORUS101.

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Le domaine térahertz (THz) inclut une riche variété d’applications pratiques et fondamentales où la basse énergie des photons permettent l’investigation de nouveaux phénomènes d’interaction lumière-matière. Ces travaux se focalisent sur deux thématiques émergentes où la spectroscopie THz ultra-rapide représente un outil particulièrement adapté à l’étude de phénomènes fondamentaux ainsi qu’à la conception de nouvelles sources THz. La première thématique concerne la spintronique THz capable de générer des ondes THz équivalentes à celles obtenues au sein des cristaux non-linéaires. Cette technologie est basée sur des hétérostructures constituées de matériaux ferromagnétiques – métaux de transitions possédant des épaisseurs nanométriques permettant une émission THz par excitation ultrarapide de la structure, induisant un courant de spin et via l’effet Hall de spin, une conversion de courant de spin en courant de charge. Au-delà de ces structures métalliques, des matériaux « quantiques » faisant intervenir des phénomènes tel que l’effet inverse Edelstein au sein des isolants topologiques sont également étudiés. La seconde thématique abordée est celle des polaritons intersous-bandes dans le domaine THz. Les polaritons sont des quasi-particules résultant d’un couplage lumière-matière fort provenant d’un mode de cavité couplé à une transition intersous-bande. Leur nature bosonique représente une perspective pertinente à long terme pour développer de nouvelles sources THz lasers basées sur le principe de condensat de Bose-Einstein. Dans ces travaux, nous étudions le pompage optique monofréquence et résonant d’une branche polaritonique par une sonde large bande constituée d’impulsions THz. Cette investigation révèle de fortes indications d’effets non-linéaires et potentiellement des signatures de diffusions polaritoniques. Enfin, nous présentons également des optimisations technologiques de sources THz existantes utiles à l’études des deux thématiques abordées. Notamment de sources THz de type antennes photoconductrices haute puissance en cavités, qui ont permis la première démonstration d’imagerie THz en temps réel obtenue avec de tel dispositifs
The terahertz (THz) domain provides a rich playground for many practical and fundamental applications, where the low energy of THz photons permits to probe novel light-matter interactions. This work investigates two recent and emerging scientific areas where ultrafast THz spectroscopy can be used as a probe of fundamental phenomena, as well as potentially enabling the conception of new THz sources. In the first case, ultrafast THz spintronics are studied where ultrafast excitations of spintronic heterojunctions result in efficient pulse generation. These structures consist of nanometer thick ferromagnetic - heavy metal junctions, where an optically generated spin-charge in the former is converted to a charge-current in the latter via the Inverse Spin Hall Effect. Beyond these metal-based junctions, ultrafast THz spintronics based on “quantum” materials is also investigated, where THz pulses are generated using quantum phenomena such as the Inverse Edelstein Effect in Topological Insulators, shown to be a promising research direction. The second subject area is focused on THz intersubband polaritons, quasi-particles that emerge from the strong light-matter coupling of a THz photonic cavity and an intersubband transition. Here we are interested in the bosonic nature of the intersubband polaritons, as a long-term aim of realizing a novel THz laser based on Bose-Einstein condensation. In this work, we investigate resonant narrowband pumping of a polariton branch and probe using spectrally broad THz pulses. This shows strong indications of nonlinear effects and potential signatures of scattering processes that could eventually lead to the demonstration of THz polaritonic gain. Finally, to support our work in the above subject areas, technological developments were made in existing THz sources. This included high power THz photoconductive switches using cavities, which permitted the first demonstrations of real time THz imaging with such devices, and high power THz quantum cascade lasers as narrowband laser pumps
4

LONGO, EMANUELE MARIA. "HETEROSTRUCTURES BASED ON THE LARGE-AREA Sb2Te3 TOPOLOGICAL INSULATOR FOR SPIN-CHARGE CONVERSION." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2021. http://hdl.handle.net/10281/311358.

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I dispositivi elettronici che sfruttano proprietà legate allo spin elettronico costituiscono un settore molto promettente per lo sviluppo della nanoelettronica del futuro. Recentemente, gli isolanti topologici tridimensionali (IT-3D), quando posti a contatto con materiali ferromagnetici (FM), giocano un ruolo centrale nel contesto del miglioramento dell’efficienza di conversione tra spin e carica elettronici in eterostrutture di tipo FM/TI. L’oggetto principale di questa tesi è lo studio delle interazioni chimico-fisiche tra l’IT-3D Sb2Te3, nelle sue forme granulare ed epitassiale, con film di Fe e Co attraverso l’uso di tecniche di Diffrazione/Riflettività di raggi-X, spettroscopia di risonanza ferromagnetica (FMR) e pompaggio di spin in risonanza ferromagnetica (SP-FMR). In concomitanza con l’ottimizzazione delle proprietà dei materiali, un particolare interesse è stato rivolto verso l’impatto industriale della ricerca presentata. Per questo motivo, per la produzione di Sb2Te3 e di alcuni dei FM impiegati, sono state impiegate tecniche di deposizione di materiali su larga scala ( 4 pollici), quali la Metal Organic Chemical Vapor Deposition (MOCVD) e l’Atomic Layer Deposition (ALD) rispettivamente. Una approfondita caratterizzazione chimica, strutturale e magnetica dell’interfaccia Fe/ Sb2Te3-granulare ha evidenziato un marcato intermixing tra i materiali e una generale tendenza degli atomi di Fe nel legare con l’elemento calcogenuro quando presente in un IT. Attraverso trattamenti termici rapidi e a bassa temperatura sottoposti sui film di Sb2Te3 granulare prima della crescita del Fe, l’interfaccia Fe/Sb2Te3-granulare è risultata morfologicamente più netta e chimicamente stabile. Lo studio di film sottili di Co cresciuti attraverso ALD su Sb2Te3 granulare ha permesso la produzione di interfacce Co/Sb2Te3-granulare di alta qualità, con la possibilità inoltre di modificare le proprietà magneto-strutturali dei film di Co attraverso una selezione appropriata di substrati. Con l’obbiettivo di migliorare le proprietà dei film di Sb2Te3, dei trattamenti termici specifici sono stati condotti su Sb2Te3 granulare appena cresciuto, ottenendo film di Sb2Te3 altamente orientati con una qualità cristallina vicina al cristallo singolo di tipo epitassiale. Questi substrati di Sb2Te3 sono stati utilizzati per produrre eterostrutture di Au/Co/Sb2Te3-epitassiale e Au/Co/Au/Sb2Te3-epitassiale per studiare la loro risposta di FMR. I dati di FMR per il campione Au/Co/Sb2Te3-epitassiale sono stati interpretati considerando un contributo di Two Magnon Scattering (TMS) dominante, verosimilmente a causa della presenza di rugosità magnetica all’interfaccia Co/Sb2Te3-epitassiale. L’introduzione di un interlayer di Au per evitare il contatto diretto tra Co e Sb2Te3 si è dimostrato vantaggioso per la totale eliminazione del contributo di TMS. Misure di SP-FMR sono state condotte sulla struttura ottimizzata Au/Co/Au/Sb2Te3-epitassiale, sottolineando il ruolo giocato dallo strato di Sb2Te3-epitassiale nel processo di SP. I segnali di SP ricavati da campioni di Au/Co/Au/Si(111) e Co/Au/Si(111) sono stati utilizzati per determinare l’efficienza di conversione spin-carica ottenuta dall’introduzione dello strato di Sb2Te3. L’efficienza estratta è stata calcolata interpretando i dati di SP-FMR attraverso i modelli di effetto Edelstein inverso ed effetto di Spin-Hall inverso, i quali hanno dimostrato che l’IT-3D Sb2Te3 è un candidato promettente per essere impiegato nella prossima generazione di dispositivi spintronici.
Spin-based electronic devices constitute an intriguing area in the development of the future nanoelectronics. Recently, 3D topological insulators (TI), when in contact with ferromagnets (FM), play a central role in the context of enhancing the spin-to-charge conversion efficiency in FM/TI heterostructures. The main subject of this thesis is the study of the chemical-physical interactions between the granular and epitaxial Sb2Te3 3D-TI with Fe and Co thin films by means of X-ray Diffraction/Reflectivity, Ferromagnetic Resonance spectroscopy (FMR) and Spin Pumping-FMR. Beside the optimization of the materials properties, particular care was taken on the industrial impact of the presented results, thus large-scale deposition processes such as Metal Organic Chemical Vapor Deposition (MOCVD) and Atomic Layer Deposition (ALD) were adopted for the growth of the Sb2Te3 3D-TI and part of the FM thin films respectively. A thorough chemical, structural and magnetic characterization of the Fe/granular Sb2Te3 interface evidenced a marked intermixing between the materials and a general bonding mechanism between Fe atoms and the chalcogen element in chalcogenide-based TIs. Through rapid and mild thermal treatments performed on the granular Sb2Te3 substrate prior to Fe deposition, the Fe/granular-Sb2Te3 interface turned out to be sharper and chemically stable. The study of ALD-grown Co thin films deposited on top of the granular-Sb2Te3 allowed the production of high-quality Co/granular-Sb2Te3interfaces, with also the possibility to tune the magneto-structural properties of the Co layer through a proper substrate selection. In order to improve the structural properties of the Sb2Te3, specific thermal treatments were performed on the as deposited granular Sb2Te3, achieving highly oriented films with a nearly epitaxial fashion. The latter substrates were used to produce Au/Co/epitaxial-Sb2Te3 and Au/Co/Au/epitaxial-Sb2Te3 and the dynamic of the magnetization in these structures was investigated studying their FMR response. The FMR data for the Au/Co/Sb2Te3 samples were interpreted considering the presence of a dominant contribution attributed to the Two Magnon Scattering (TMS), likely due to the presence of an unwanted magnetic roughness at the Co/epitaxial-Sb2Te3 interface. The introduction of a Au interlayer to avoid the direct contact between Co and Sb2Te3 layers was shown to be beneficial for the total suppression of the TMS effect. SP-FMR measurements were conducted on the optimized Au/Co/Au/epitaxial-Sb2Te3 structure, highlighting the role played by the epitaxial Sb2Te3substrate in the SP process. The SP signals for the Au/Co/Au/Si(111) and Co/Au/Si(111) reference samples were measured and used to determine the effective spin-to-charge conversion efficiency achieved with the introduction of the epitaxial Sb2Te3 layer. The extracted SCC efficiency was calculated interpreting the SP-FMR data using the Inverse Edelstein effect and Inverse Spin-Hall effect models, which demonstrated that the Sb2Te3 3D-TI is a promising candidate to be employed in the next generation of spintronic devices.
5

Kane, Matthew Hartmann. "Investigaton of the Suitability of Wide Bandgap Dilute Magnetic Semiconductors for Spintronics." Diss., Georgia Institute of Technology, 2007. http://hdl.handle.net/1853/16166.

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New semiconductor materials may enable next-generation â spintronicâ devices which exploit both the spin and charge of an electron for data processing, storage, and transfer. The realization of such devices would benefit greatly from room temperature ferromagnetic dilute magnetic semiconductors. Theoretical predictions have suggested that room temperature ferromagnetism may be possible in the wide bandgap semiconductors GaMnN and ZnMnO, though the existing models require input from the growth of high-quality materials. This work focuses on an experimental effort to develop high-quality materials in both of these wide bandgap materials systems. ZnMnO and ZnCoO single crystals have been grown by a modified melt growth technique. X-ray diffraction was used to examine the structural quality and demonstrate the single crystal character of these devices. Substitutional transition metal incorporation has been verified by optical transmission and electron paramagnetic resonance measurements. No indications of ferromagnetic hysteresis are observed from the bulk single crystal samples, and temperature dependent magnetization studies demonstrate a dominant antiferromagnetic exchange interaction. Efforts to introduce ferromagnetic ordering were only successful through processing techniques which significantly degraded the material quality. GaMnN thin films were grown by metalorganic chemical vapor deposition. Good crystalline quality and a consistent growth mode with Mn incorporation were verified by several independent characterization techniques. Substitutional incorporation of Mn on the Ga lattice site was confirmed by electron paramagnetic resonance. Mn acted as a deep acceptor in GaN. Nevertheless, ferromagnetic hysteresis was observed in the GaMnN films. The apparent strength of the magnetization correlated with the relative ratio of trivalent to divalent Mn. Valence state control through codoping with additional donors such as silicon was observed. Additional studies on GaFeN also showed a magnetic hysteresis. A comparison with implanted samples showed that the common origin to the apparent strong ferromagnetic hysteresis related to contribution from Mn substitutional ions. The observed magnetic hysteresis is due to the formation of Mn-rich regions during the growth process. This work demonstrated that the original intrinsic models for room temperature ferromagnetism in the wide bandgap semiconductors do not hold and the room temperature ferromagnetism in these materials results from extrinsic contributions.
6

Davesne, Vincent. "Organic spintronics : an investigation on spin-crossover complexes from isolated molecules to the device." Phd thesis, Université de Strasbourg, 2013. http://tel.archives-ouvertes.fr/tel-01062266.

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We have studied by STM, SQUID, X-ray reflectivity, X-ray diffraction, optical absorption and XAS Fe(phen)2(NCS)2 and Fe{[3,5-dimethylpyrazolyl]3BH}2 samples deposited by thermal evaporation on Cu(100), Co(100) and SiO2 substrates, and compared with results on powder samples. We have confirmed the existence of the soft X-ray induced excited spin state trapping (SOXIESST), and investigated its properties, in particular dynamic aspects. The effect is sensitive to the intensity and the structure of the applied X-ray beam, and is non-resonant. We suggest that its efficiency is also governed by metal-ligand charge transfer states (MLCT). The study of single molecules has revealed that they could be switched by voltage pulses, and by this way building memristive devices, but only if the influence of the substrate is sufficiently reduced. We have then investigated thin films with the help from a simple thermodynamic model, and evidenced that the cooperativity was reduced and the transition temperature is modified (higher for Fe-phen, and lower for Fe-pyrz). Finally, we use these results to build multilayer vertical devices Au/Fe-phen/Au, and its electrical properties depends, according to our preliminary results, on the external stimuli (temperature, magnetic field). Notably, they present a "diode" effect at the spin transition.
7

Tseng, Hsiang-Han. "Towards controlling the coercivity in molecular thin films for spintronic applications." Thesis, Imperial College London, 2015. http://hdl.handle.net/10044/1/33845.

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Organic semiconductors have attracted worldwide interest for the past two decades. The properties of these molecules can be easily manipulated and exploited, and furthermore benefit from chemical versatility, mechanical flexibility and low cost. This has led to a remarkable success in the field of plastic electronics and molecules have found numerous device applications such as photovoltaic cells (PV), organic light emitting diode (OLED), organic field effect transistor (OFET) and sensors. Organic semiconductors have recently become of considerable interest for spintronic applications, due to the long spin relaxation times and magneto-resistive effects observed in these systems. In order to fully exploit the advantages of these molecules for spintronic applications, it is essential to explore molecular routes towards all organic spin valves and search for molecule-based magnets as alternatives to conventional spin injector/detector such as La0.67Sr0.33 MnO3 (LMSO) and Co. The scope of this thesis is to investigate the way to control the functional properties and in particular the magnetic interactions and coercivities in molecular thin films, with an emphasis on the charge-transfer salt, [MnTPP][TCNQ], and a ferromagnetic system, FePc (including mixed H2Pc:FePc), respectively, fabricated by organic molecular beam deposition (OMBD). Although the magnetic couplings are currently limited to cryogenic temperature, it is shown that it is possible to engineer exotic physical properties in these mixed films, where the magnetism seen as an intrinsic property to the functional molecules shows a strong dependence on the local chemical structure and spatial displacement for the magnetic ions, which can be manipulated by addition of electron acceptor and non-magnetic substituent. Compared to conventional magnetic semiconductors, this approach is a molecular route towards tuneable magnetic properties, allowing one to directly control the magnetic interactions by varying the film composition via co-deposition, a desirable property that is obtained in the film form and readily exploited in all organic spintronic applications.
8

Bruneel, Pierre. "Electronic and spintronic properties of the interfaces between transition metal oxides." Thesis, université Paris-Saclay, 2020. http://www.theses.fr/2020UPASP047.

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Cette thèse porte sur les propriétés de transport anormal des oxydes de métaux de transition, en particulier de la surface de SrTiO₃ ou de l’interface entre SrTiO₃ et LaAlO₃. Dans ces systèmes on observe l’apparition de gaz d’électrons bidimensionnels. Des mesures d’Effet Hall non linéaire indiquent que ces gaz sont constitués de plusieurs sortes de porteurs de charge, et que leurs populations varient de manière non monotone sous l’effet du dopage électrostatique. L’effet des propriétés électrostatiques et des corrélations électroniques sur ces variations sont discutées. Celles-ci sont à l’origine de réponses remarquables en ce qui concerne la conversion du spin en charge dans ces systèmes à l’aide d’un modèle de liaisons fortes et de la théorie de la réponse linéaire. Les effets conjoints du spin-orbite atomique et de la brisure de symétrie d’inversion à l’interface verrouille les nombres quantiques de spin, de caractère orbital et d’impulsion des électrons, et induit des textures de spin complexe dans l’espace réciproque. Ces textures sont responsables de l’apparition des effets Edelstein et Hall de spin dans ces hétérostructures et sont caractéristiques de la nature multi-orbitale de ces systèmes électroniques. Enfin nous conduirons une étude ab initio des hétérostructures STO/LAO/STO pour expliquer les observations expérimentales de nouvelles manières de former un gaz d’électrons à ces interfaces d’oxydes. Nous discuterons des rôles respectifs de la chimie, de l’électrostatique et des défauts dans l’apparition de ce gaz
The anomalous transport properties of transition metal oxides, in particular the surface of SrTiO₃ or at the interface between SrTiO₃ and LaAlO₃ is investigated in this thesis. These systems host two-dimensional electron gases. Nonlinear Hall Effect measurements suggest that several species of carriers are present in these systems, and that their population is varying on a nontrivial manner upon electrostatic doping. The role of the electrostatics properties of the electron gas and of the electronic correlations are discussed in this light. Next we discuss the spin to charge conversion of these systems thanks to tight-binding modeling and linear response theory. The complex interplay between atomic spin-orbit coupling and the inversion symmetry breaking at the interface leads to a complex spin-orbital-momentum locking of the electrons, inducing spin textures. These spin textures are responsible for the appearance of the Edelstein and Spin Hall Effect in these heterostructures and are characteristic of the multi-orbital character of these electronic systems. Finally an ab initio study of STO/LAO/STO heterostructures is performed to explain experimental evidence of new ways to produce an electron gas at this interface. The respective roles of the chemistry, electrostatics and defects are discussed
9

Chaluvadi, Sandeep kumar. "Influence of the epitaxial strain on magnetic anisotropy in LSMO thin films for spintronics applications." Thesis, Normandie, 2017. http://www.theses.fr/2017NORMC248/document.

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Nous présentons une étude des effets de contrainte induits par l’épitaxie dans des couches minces La1-xSrxMnO3 (LSMO) (001) (x = 0.33) pour 3 épaisseurs de films (50, 25 et 12 nm) déposés par Ablation Laser Pulsée (PLD) sur différents substrats tels que SrTiO3 (STO) (001), STO buffered MgO (001), NdGaO3 (NGO) (110) et (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) (001). L’étude est complétée par l’effet de la composition sur les propriétés magnétiques de couches minces de La1-xSrxMnO3 avec x=0,33 et 0,38 déposées par Epitaxie à Jets Moléculaires (MBE). Des caractérisations par diffraction de rayons X (XRD), et microscopie à force atomique (AFM), des mesures de résistivité électrique en quatre points en fonction de la température, d’aimantation par magnetometrie à SQUID (Superconducting Quantum Interference Device) et d’anisotropie magnétique par magnétométrie magnéto-optique Kerr vectorielle (MOKE) sont présentées. Les évolutions angulaires de l’anisotropie magnétique, de l’aimantation à rémanence, du champ coercitif et du champ de renversement d’aimantation ont ainsi pu être analysées pour des films épitaxiés LSMO de différentes épaisseurs. Des études en fonction de la température complètent les données. L’origine de l’anisotropie (magnétique, magnétocristalline, magnétostrictive ou liée aux effets de marches et d’angle de désorientation du substrat) est finalement discutée
We report a quantitative analysis of thickness dependent epitaxial strain-induced effects in La1-xSrxMnO3 (LSMO) (001) (x = 0.33) thin films of thicknesses (50, 25 and 12 nm) grown on various single crystal substrates such as SrTiO3 (STO) (001), STO buffered MgO (001), NdGaO3 (NGO) (110) and (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) (001) by Pulsed Laser Deposition (PLD) technique. We also report the composition dependent magnetic properties of LSMO thin films with x = 0.33 and 0.38 in particular grown onto LSAT (001) substrate by Molecular Beam Epitaxy (MBE). The study mainly includes measurements such as X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), temperature dependent four-probe resistivity, magnetization properties by Superconducting Quantum Interference Device (SQUID), magnetic anisotropy by Magneto-Optical Kerr Magnetometry (MOKE). Our results highlight the detailed study of angular evolution and thickness dependent magnetic anisotropy, remanence, coercivity and switching field in epitaxial LSMO thin films. Temperature-dependent studies are also performed on few selected films. We will also discuss the cause of magnetic anisotropy in LSMO films i.e., magneto-crystalline and magnetostriction anisotropy and the effects of steps or substrate mis-cut induced anisotropy
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Owen, Man Hon Samuel. "Electrical gating effects on the magnetic properties of (Ga,Mn)As diluted magnetic semiconductors." Thesis, University of Cambridge, 2010. https://www.repository.cam.ac.uk/handle/1810/228705.

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The aim of the research project presented in this thesis is to investigate the effects of electrostatic gating on the magnetic properties of carrier-mediated ferromagnetic Ga1-xMnxAs diluted magnetic semiconductors. (Ga,Mn)As can be regarded as a prototype material because of its strong spin-orbit coupling and its crystalline properties which can be described within a simple band structure model. Compressively strained (Ga,Mn)As epilayer with more complex in-plane competing cubic and uniaxial magnetic anisotropies is of particular interest since a small variation of these competing anisotropy fields provide a means for the manipulation of its magnetization via external electric field. An all-semiconductor epitaxial p-n junction field-effect transistor (FET) based on low-doped Ga0.975Mn0.025As was fabricated. It has an in-built n-GaAs back-gate, which, in addition to being a normal gate, enhances the gating effects, especially in the depletion of the epilayer, by decreasing the effective channel thickness by means of a depletion region. A shift in the Curie temperature of ~2 K and enhanced anisotropic magnetoresistance (AMR) (which at saturation reaches ~30%) is achieved with a depletion of a few volts. Persistent magnetization switchings with short electric field pulses are also observed. The magnitude of the switching field is found to decrease with increasing depletion of the (Ga,Mn)As layer. By employing the k . p semiconductor theory approach (performed by our collaborators in Institute of Physics, ASCR, Prague), including strong spin-orbit coupling effects in the host semiconductor valence band, a change in sign of Kc at hole density of approximately 1.5x1020 cm-3 is observed. Below this density, the [110]/[1⁻10] magnetization directions are favoured, consistent with experimental data. A double-gated FET, with an ionic-gel top-gate coupled with a p-n junction back-gate based on the same material, was also employed in an attempt to achieve larger effects through gating. It reaffirms the results obtained and demonstrates enhanced gating effects on the magnetic properties of (Ga,Mn)As.
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Books on the topic "THz spintronics":

1

International Symposium on Mesoscopic Superconductivity and Spintronics (4th 2006 Atsugi-shi, Japan). Controllable quantum states: Mesoscopic Superconductivity and Spintronics : proceedings of the International Symposium. Edited by Takayanagi H. (Hideaki), Nitta Junsaku, and Nakano Hayato. New Jersey: World Scientific Publishing Co., 2008.

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International Symposium on Mesoscopic Superconductivity and Spintronics (2002 Atsugi-shi, Japan). Towards the controllable quantum states: Mesoscopic superconductivity and spintronics : Atsugi, Kanagawa, Japan, 4-6 March 2002. Edited by Takayanagi H and Nitta Junsaku. River Edge, N.J: World Scientific, 2003.

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International Symposium on Mesoscopic Superconductivity and Spintronics (2004 Atsugi, Kanagawa, Japan). Realizing controllable quantum states: Mesoscopic superconductivity and spintronics ın the light of quantum computation : Atsugi, Kanagawa, Japan, 1-4 March 2004. Edited by Takayanagi H and Nitta Junsaku. Singapore: World Scientific, 2005.

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Truesdell, C. The elements of continuum mechanics. 2nd ed. New York: Springer-Verlag, 1985.

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IFF-Ferienkurs (34th 2003 Forschungszentrum Jülich). Fundamentals of nanoelectronics: Lecture manuscripts of the 34th Spring School of the Department of Solid State Research : this spring school was organized on March 10-21, 2003 in the Forschungszentrum Jülich GmbH by the Institut für Festkörperforschung in collaboration with universities, research institutes and the industry. Jülich: Forschungszentrum Jülich, Institut für Festkörperforschung, 2003.

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International Winter School on New Developments in Solid State Physics (13th 2004 Mauterndorf, Austria). Proceedings of the Thirteenth International Winterschool on New Developments in Solid State Physics: Low-dimensional systems : held in Mauterndorf, Austria, 15-20 February 2004. Edited by Bauer G. 1942-, Jantsch W. 1946-, and Kuchar F. 1941-. Amsterdam, The Netherlands: Elsevier, 2004.

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International Winter School on New Developments in Solid State Physics (13th 2004 Mauterndorf, Austria). Proceedings of the Thirteenth International Winterschool on New Developments in Solid State Physics: Low-dimensional systems : held in Mauterndorf, Austria, 15-20 February 2004. Edited by Bauer G. 1942-, Jantsch W. 1946-, and Kuchar F. 1941-. Amsterdam, The Netherlands: Elsevier, 2004.

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Brandt, Siegmund. The Picture Book of Quantum Mechanics. 4th ed. New York, NY: Springer New York, 2012.

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Joachim, Christian. Atomic Scale Interconnection Machines: Proceedings of the 1st AtMol European Workshop Singapore 28th-29th June 2011. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012.

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Lorente, Nicolas. Architecture and Design of Molecule Logic Gates and Atom Circuits: Proceedings of the 2nd AtMol European Workshop. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013.

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Book chapters on the topic "THz spintronics":

1

Mattana, Richard, Nicolas Locatelli, and Vincent Cros. "Spintronics and Synchrotron Radiation." In Springer Proceedings in Physics, 131–63. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-64623-3_5.

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AbstractHaving access to the electronic and magnetic properties of spintronic systems is of crucial importance in view of their future technological developments. Our purpose in this chapter is to elaborate how a variety of synchrotron radiation-based measurements provides powerful and often unique techniques to probe them. We first introduce general concepts in spintronics and present some of the important scientific advances achieved in the last 30 years. Then we will describe some of the key investigations using synchrotron radiation concerning voltage control of magnetism, spin-charge conversion and current-driven magnetization dynamics.
2

Gao, Haitao, Alexandra Jung, Irene Bonn, Vadim Ksenofontov, Sergey Reiman, Claudia Felser, Martin Panthöfer, and Wolfgang Tremel. "Substitution Effects in Double Perovskites: How the Crystal Structure Influences the Electronic Properties." In Spintronics, 61–70. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-90-481-3832-6_4.

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Fecher, Gerhard H., Stanislav Chadov, and Claudia Felser. "Theory of the Half-Metallic Heusler Compounds." In Spintronics, 115–65. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-90-481-3832-6_7.

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Wüstenberg, Jan-Peter, Martin Aeschlimann, and Mirko Cinchetti. "Characterization of the Surface Electronic Properties of Co2Cr1−xFexAl." In Spintronics, 271–84. Dordrecht: Springer Netherlands, 2013. http://dx.doi.org/10.1007/978-90-481-3832-6_12.

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Galbiati, Marta. "State of the Art in Organic and Molecular Spintronics." In Molecular Spintronics, 29–42. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-22611-8_3.

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Galbiati, Marta. "State of the Art in Alq3-Based Spintronic Devices." In Molecular Spintronics, 139–51. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-22611-8_7.

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Papaioannou, Evangelos, Garik Torosyan, and Rene Beigang. "Spintronic THz Emitters." In Advances in Terahertz Source Technologies, 143–79. New York: Jenny Stanford Publishing, 2024. http://dx.doi.org/10.1201/9781003459675-7.

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Jin, Hanmin, and Terunobu Miyazaki. "Technology that Accompanies the Development of Spintronics Devices." In The Physics of Ferromagnetism, 447–76. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-25583-0_14.

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Lunghi, Alessandro. "Spin-Phonon Relaxation in Magnetic Molecules: Theory, Predictions and Insights." In Challenges and Advances in Computational Chemistry and Physics, 219–89. Cham: Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-31038-6_6.

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AbstractMagnetic molecules have played a central role in the development of magnetism and coordination chemistry, and their study keeps leading innovation in cutting-edge scientific fields such as magnetic resonance, magnetism, spintronics, and quantum technologies. Crucially, a long spin lifetime well above cryogenic temperature is a stringent requirement for all these applications. In this chapter, we review the foundations of spin relaxation theory and provide a detailed overview of first-principles strategies applied to the problem of spin-phonon relaxation in magnetic molecules. Firstly, we present a rigorous formalism of spin-phonon relaxation based on open-quantum systems theory. These results are then used to derive classical phenomenological relations based on the Debye model. Finally, we provide a prescription of how to map the relaxation formalism onto existing electronic structure methods to obtain a quantitative picture of spin-phonon relaxation. Examples from the literature, including both transition metals and lanthanides compounds, will be discussed in order to illustrate how Direct, Orbach, and Raman relaxation mechanisms can affect spin dynamics for this class of compounds.
10

Pershin, I., A. Knizhnik, V. Levchenko, A. Ivanov, and B. Potapkin. "The Fouriest: High-Performance Micromagnetic Simulation of Spintronic Materials and Devices." In Advances in Intelligent Systems and Computing, 209–31. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-22871-2_16.

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Conference papers on the topic "THz spintronics":

1

Huisman, Thomas. "THz spectroscopy for THz spintronics (Conference Presentation)." In Spintronics IX, edited by Henri-Jean Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2016. http://dx.doi.org/10.1117/12.2235682.

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Bratschitsch, Rudolf. "Ultrafast spintronic THz emitters (Conference Presentation)." In Spintronics XV, edited by Henri-Jean M. Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2022. http://dx.doi.org/10.1117/12.2633298.

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Bonetti, Stefano. "THz probing and manipulation of magnetism (Conference Presentation)." In Spintronics XI, edited by Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2018. http://dx.doi.org/10.1117/12.2322364.

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Bocklage, Lars. "Transient THz spin dynamics by spin pumping (Conference Presentation)." In Spintronics X, edited by Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2017. http://dx.doi.org/10.1117/12.2278014.

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Tiercelin, Nicolas, Geoffrey Lezier, Pierre Koleják, Jean-François Lampin, Kamil Postava, and Mathias Vanwolleghem. "THz spintronic emitters with magnetoelectric control of the polarization and applications to polarimetry." In Spintronics XIV, edited by Henri-Jean M. Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2021. http://dx.doi.org/10.1117/12.2597306.

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Qi, Jingbo. "Broadband THz radiation via the inverse spin Hall and Rashba-Edelstein effects (Conference Presentation)." In Spintronics XI, edited by Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2018. http://dx.doi.org/10.1117/12.2322834.

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Klarskov, Pernille. "Probing carrier dynamics with THz time-domain and emission microscopy (Conference Presentation)." In Spintronics XII, edited by Henri-Jean M. Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2019. http://dx.doi.org/10.1117/12.2529938.

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Medapalli, Rajasekhar, Guanqiao Li, Rostislav Mikhaylovskiy, Fred Spada, Tom Silva, Theo Rasing, Alexey Kimel, and Eric E. Fullerton. "Helicity-dependent THz-emission in thin film Co/Pt bilayers: role of the interface (Conference Presentation)." In Spintronics XI, edited by Henri Jaffrès, Henri-Jean Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2018. http://dx.doi.org/10.1117/12.2321641.

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Hawecker, Jacques, Thi-Huong Dang, Enzo Faycal Rongione, Giovanni Baez Flores, Juan-Carlos Rojas-Sánchez, Hanond Nong, Diogo Vaz, et al. "Ultrafast spin-charge interconversion in Rashba states probed by time-domain THz spectroscopy." In Spintronics XIII, edited by Henri-Jean M. Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2020. http://dx.doi.org/10.1117/12.2568583.

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Hawecker, Jacques, Enzo Rongione, Laëtitia Baringthon, Thi-Huong Dang, Giovanni G. Baez Flores, Duy-Quang TO, Juan-Carlos Rojas-Sánchez, et al. "Ultrafast spin-charge interconversion in Rashba states probed by time-domain THz spectroscopy." In Spintronics XIV, edited by Henri-Jean M. Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2021. http://dx.doi.org/10.1117/12.2594133.

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Reports on the topic "THz spintronics":

1

Guha, Supratik, H. S. Philip Wong, Jean Anne Incorvia, and Srabanti Chowdhury. Future Directions Workshop: Materials, Processes, and R&D Challenges in Microelectronics. Defense Technical Information Center, June 2022. http://dx.doi.org/10.21236/ad1188476.

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Microelectronics is a complex field with ever-evolving technologies and business needs, fueled by decades of continued fundamental materials science and engineering advancement. Decades of dimensional scaling have led to the point where even the name microelectronics inadequately describes the field, as most modern devices operate on the nanometer scale. As we reach physical limits and seek more efficient ways for computing, research in new materials may offer alternative design approaches that involve much more than electron transport e.g. photonics, spintronics, topological materials, and a variety of exotic quasi-particles. New engineering processes and capabilities offer the means to take advantage of new materials designs e.g. 3D integration, atomic scale fabrication processes and metrologies, digital twins for semiconductor processes and microarchitectures. The wide range of potential technological approaches provides both opportunities and challenges. The Materials, Processes, and R and D Challenges in Microelectronics Future Directions workshop was held June 23-24, 2022, at the Basic Research Innovation Collaboration Center in Arlington, VA, to examine these opportunities and challenges. Sponsored by the Basic Research Directorate of the Office of the Under Secretary of Defense for Research and Engineering, it is intended as a resource for the S and T community including the broader federal funding community, federal laboratories, domestic industrial base, and academia.

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