Journal articles: 'Three-phase SiC Inverter'

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Kranzer, Dirk, Florian Reiners, Christian Wilhelm, and Bruno Burger. "System Improvements of Photovoltaic Inverters with SiC-Transistors." Materials Science Forum 645-648 (April 2010): 1171–76. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1171.

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In this paper the system improvements of PV-inverters with SiC-transistors are demonstrated. The basic characteristics of engineering prototypes of normally-off SiC-JFETs and SiC-MOSFETs were measured and their differences in the application are considered. To demonstrate the improvement in PV-inverter performance, a 5 kW single-phase and a three-phase full bridge inverter with normally-off SiC-JFETs were developed at Fraunhofer ISE. Different switching frequencies up to 144 kHz were applied and the impact on production costs and inverter performance was rated under the aspects of an industrial product development. This means, the influences on the efficiency and power density. In this work, a world record in PV-inverter efficiency of 99 % was achieved in a single-phase inverter and for the three-pase inverter, the power density was tripled with respect to commercially available state of the art PV-inverters.

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Kim, Jaechang, Sangshin Kwak, and Seungdeog Choi. "Impacts of SiC-MOSFET Gate Oxide Degradation on Three-Phase Voltage and Current Source Inverters." Machines 10, no. 12 (December 9, 2022): 1194. http://dx.doi.org/10.3390/machines10121194.

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In this paper, the performance variations of SiC MOSFET-based voltage and current source inverters under gate oxide degradation are studied. It is confirmed that the turn-on and turn-off delays of SiC MOSFETs change significantly by high electric field stress, which accelerates the gate oxide degradation. Variations in the turn-on and turn-off delays of switching devices extend or reduce the duty error of voltage source inverters and current source inverters. The performance variations of the voltage and current source inverter due to the duty error changes caused by the gate oxide degradation are analyzed through simulations. As a result, the gate oxide degradation worsens the performance of the voltage source inverter. Furthermore, the negative gate oxide degradation, which lowers the threshold voltage, decreases the performance of the current source inverter.

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Costa, Pedro, Sónia Pinto, and José Fernando Silva. "A Novel Analytical Formulation of SiC-MOSFET Losses to Size High-Efficiency Three-Phase Inverters." Energies 16, no. 2 (January 11, 2023): 818. http://dx.doi.org/10.3390/en16020818.

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This paper presents a novel analytical loss formulation to predict the efficiency of three-phase inverters using silicon carbide (SiC) metal—oxide—semiconductor field-effect transistors (MOSFETs). The proposed analytical formulation accounts for the influence of the output current harmonic distortion on the conduction losses as well as the impact of the output parasitic capacitances and the deadtime on the switching losses. The losses are formulated in balanced conditions to select suitable SiC MOFETs for the desired target efficiency. To validate the proposed methodology, a 3-phase inverter is designed to present full load efficiency in excess of 99% when built using SiC MOSFETs antiparalleled with SiC Schottky diodes selected for the specified full load efficiency. Experimental assessment of the designed inverter efficiency is compared with the expected values from the proposed analytical formulation and shown to match or exceed the predicted results for loads ranging from 40% to 100% of full load.

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Yang and Choi. "Power Efficiency Improvement of Three-Phase Split-Output Inverter Using Magnetically Coupled Inductor Switching." Electronics 8, no. 9 (August 30, 2019): 969. http://dx.doi.org/10.3390/electronics8090969.

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The conventional three-phase split-output inverter (SOI) has been used for grid-connected applications because it does not require dead time and has no shoot-through problems. Recently, the conventional inverter uses the silicon carbide (SiC) schottky diodes for the freewheeling diodes because of its no reverse-recovery problem. Nevertheless, in a practical design, the SiC schottky diodes suffer from current overshoots and voltage oscillations. These overshoots and oscillations result in switching-power losses, decreasing the power efficiency of the inverter. To alleviate this drawback, we present a three-phase SOI using magnetically coupled inductor switching technique. The magnetically coupled inductor switching technique uses one auxiliary diode and coupled inductor for each switching leg in the three-phase SOI. By the operation of the coupled inductor, the main diode current is shifted to the auxiliary diode without the reverse-recovery process. The proposed inverter reduces switching-power losses by alleviating current overshoots and voltage oscillations of SiC schottky diodes. It achieves higher power efficiency than the conventional inverter. We discuss experimental results for a 1.0 kW prototype inverter to verify the performance of the proposed inverter.

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Abdalgader, Ibrahim A. S., Sinan Kivrak, and Tolga Özer. "Power Performance Comparison of SiC-IGBT and Si-IGBT Switches in a Three-Phase Inverter for Aircraft Applications." Micromachines 13, no. 2 (February 17, 2022): 313. http://dx.doi.org/10.3390/mi13020313.

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The converters used to integrate the ground power station of planes with the utility grid are generally created with silicon-insulated gate bipolar transistor (Si-IGBT)-based semiconductor technologies. The Si-IGBT switch-based converters are inefficient, oversized, and have trouble achieving pure sine wave voltages requirements. The efficiency of the aircraft ground power units (AGPU) can be increased by replacing existing Si-IGBT transistors with silicon carbide (SiC) IGBTs because of the physical constraints of Si-IGBT switches. The primary purpose of this research was to prove that the efficiency increase could be obtained in the case of using SiC-IGBTs in conventional AGPU systems with the realized experimental studies. In this study, three different experimental systems were discussed for this purpose. The first system was the traditional APGU system. The other two systems were single-phase test (SPT) and three-phase inverter systems, respectively. The SPT system and three-phase inverter systems were designed and implemented to compare and make analyses of Si-IGBTs and SiC-IGBTs performance. The efficiency and detailed hard switching behavior comparison were performed between the 1200-V SiC-IGBT- and 1200-V Si-IGBT-based experimental systems. The APGU system and Si-IGBT modules were examined, the switching characteristic and efficiency of the system were obtained in the first experimental study. The second experimental study was carried out on the SPT system. The single-pulse test system was created using Si-IGBTs and SiC-IGBTs switches in the second experimental system. The third experiment included a three-phase-inverter-based test system. The system was created with Si-IGBTs and SiC-IGBTs to compare the two different switch-based inverters under RL loads. The turning off and turning on processes of the IGBT switches were examined and the results were presented. The Si-IGBT efficiency was 77% experimentally in the SPT experimental system. The efficiency of the third experimental system was increased up to 95% by replacing the old Si transistor with a SiC. The efficiency of the three-phase Si-IGBT-based system was 86% for the six-switch case. The efficiencies of the SiC-IGBT-based system were increased to around 92% in the three-phase inverter system experimentally. The findings of the experimental results demonstrated that the SiC-IGBT had a faster switching speed and a smaller loss than the classical Si-IGBT. As a result of the experimental studies, the efficiency increase that could be obtained in the case of using SiC-IGBTs in conventional AGPU systems was revealed.

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Colmenares, Juan, Diane-Perle Sadik, Patrik Hilber, and Hans-Peter Nee. "Reliability Analysis of a High-Efficiency SiC Three-Phase Inverter." IEEE Journal of Emerging and Selected Topics in Power Electronics 4, no. 3 (September 2016): 996–1006. http://dx.doi.org/10.1109/jestpe.2016.2551980.

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Lee, Heng, Chun Kai Liu, and Tao Chih Chang. "The Study of Comparative Characterization between SiC MOSFET and Si- IGBT for Power Module and Three-Phase SPWM Inverter." Materials Science Forum 1004 (July 2020): 1045–53. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1045.

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This paper focuses on how to define and integrate the system level and power module level with optimal conditions in SiC and Si-IGBT. To investigate the above situation, we compare the performance of SiC and Si-IGBT in power module and system level at different ambient temperatures. At the same maximum junction temperature 150°C and ambient temperature at 25°C and 80°C, it found that SiC type electrical resistance, maximum endurable current, and voltage could be better than the IGBT type power module above 20%. On the other hand, the simulation of three-phase inverter at different switching frequency such as 10kHz, 15kHz, 20kHz, 30kHz and it had been observed that the power loss of SiC inverter are 78% less for 10kHz switching frequency; 82% less for switching frequency at 15kHz; 85% less for 20kHz of switching frequency; 89% less for switching frequency at 30kHz in the Si-IGBT three-phase SPWM inverter at ambient temperature 80°C.

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Sasaki, Kensuke, Shinji Sato, Kohei Matsui, Yoshinori Murakami, Satoshi Tanimoto, and Hidekazu Tanisawa. "40 kW/L High Switching Frequency Three-Phase AC 400 V All-SiC Inverter." Materials Science Forum 740-742 (January 2013): 1081–84. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1081.

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We, the R&D Partnership for Future Power Electronics Technology (FUPET), have reported a forced-air-cooled DC 600 V three-phase AC 400 V inverter built with SiC-JFETs and SiC-SBDs and designed to attain an output power density (OPD) of 40 kW/L with a switching frequency (fSW) of 50 kHz. This paper reports the test results of this inverter attaining an OPD of 40 kW/L in operating a 3-phase motor with fSW = 50 kHz, and an OPD of more than 60 kW/L in operating an equivalent circuit with fSW = 20 kHz by adopting specialized high speed drive circuit boards.

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di Benedetto, Marco, Luca Bigarelli, Alessandro Lidozzi, and Luca Solero. "Efficiency Comparison of 2-Level SiC Inverter and Soft Switching-Snubber SiC Inverter for Electric Motor Drives." Energies 14, no. 6 (March 18, 2021): 1690. http://dx.doi.org/10.3390/en14061690.

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This paper focuses on the investigation and implementation of a high-performance power conversion system to reduce the overvoltage phenomenon in variable speed electric drive applications. Particularly, the pros and cons of using Silicon Carbide power MOSFETs in the power converter when a long power cable is employed in electric motor drive systems has been addressed. The three-phase two level inverter with the addition of snubber circuits that consist of capacitors and diodes has been investigated, designed and tested in order to mitigate the overvoltage problems without sacrificing the conversion efficiency. Given that the snubber circuit added to the switches can increase losses, an additional circuit is used to recover the energy from the snubber circuit. The proposed analysis has been then validated through an experimental campaign performed on the converter prototype. The experimental results show that the proposed converter can reduce the overvoltage at the electric motor terminals with excellent conversion efficiency compared to the classical solution like the three-phase two level inverter.

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Cougo, Bernardo, Lenin Morais, Gilles Segond, Raphael Riva, and Hoan Tran Duc. "Influence of PWM Methods on Semiconductor Losses and Thermal Cycling of 15-kVA Three-Phase SiC Inverter for Aircraft Applications." Electronics 9, no. 4 (April 7, 2020): 620. http://dx.doi.org/10.3390/electronics9040620.

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This paper presents the influence of different pulse width modulation (PWM) methods on losses and thermal stresses in SiC power modules used in a three-phase inverter. The variation of PWM methods directly impacts instantaneous losses on these semiconductors, consequently resulting in junction temperature swing at the fundamental frequency of the converter’s output current. This thermal cycling can significantly reduce the lifetime of these components. In order to determine semiconductor losses, one needs to characterize SiC devices to calculate the instantaneous power. The characterization methodology of the devices, the calculation of instantaneous power and temperature of SiC dies, and the influence of the different PWM methods are presented. A 15-kVA inverter is built in order to obtain experimental results to confirm the characterization and loss calculation, and we show the best PWM methods to increase efficiency and reliability of the three-phase inverter for specific aircraft applications.

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Chinthavali, Madhu Sudhan, and Zhi Qiang Wang. "30-kW All-SiC Inverter with 3D-Printed Air-Cooled Heatsinks for Plug-In and Full Electric Vehicle Applications." Materials Science Forum 924 (June 2018): 845–48. http://dx.doi.org/10.4028/www.scientific.net/msf.924.845.

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This paper presents the design and development of a 30-kW 3D printed based air-cooled silicon carbide (SiC) inverter for electric vehicle application. Specifically, an all-SiC air-cooled power module is designed, aiming at reduced thermal resistance for high temperature and high power density operation. The module assembly incorporates three major parts: an optimized 3D printed heat sink, a SiC MOSFET phase leg module, and a two-channel gate driver. The electrical and thermal performance of the power module is evaluated through double pulse test and continuous operation. Based on the air-cooled power module, a three-phase half-bridge voltage source inverter with 3D-printed air duct is built and tested to further verify the performance of the power module.

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Rąbkowski, Jacek, and Rafał Kopacz. "Extended T-type Inverter." Power Electronics and Drives 3, no. 1 (December 1, 2018): 55–64. http://dx.doi.org/10.2478/pead-2018-0015.

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Abstract This paper presents a new concept for a power electronic converter - the extended T-type (eT) inverter, which is a combination of a three-phase inverter and a three-level direct current (dc)/dc converter. The novel converter shows better performance than a comparable system composed of two converters: a T-type inverter and a boost converter. At first, the three-level dc/dc converter is able to boost the input voltage but also affects the neutral point potential. The operation principles of the eT inverter are explained and a simulation study of the SiC-based 6 kVA system is presented in this paper. Presented results show a serious reduction of the DC-link capacitors and the input inductor. Furthermore, suitable SiC power semiconductor devices are selected and power losses are estimated using Saber software in reference to a comparative T-type inverter. According to the simulations, the 50 kHz/6 kVA inverter feed from the low voltage (250 V) shows <2.5% of power losses in the suggested SiC metal oxide-semiconductor field-effect transistors (MOSFETs) and Schottky diodes. Finally, a 6 kVA laboratory model was designed, built and tested. Conducted measurements show that despite low capacitance (2 × 30 μF/450 V), the neutral point potential is balanced, and the observed efficiency of the inverter is around 96%.

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Stella, Fausto, Gianmario Pellegrino, and Eric Armando. "Three-phase SiC inverter with active limitation of all MOSFETs junction temperature." Microelectronics Reliability 110 (July 2020): 113659. http://dx.doi.org/10.1016/j.microrel.2020.113659.

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Aguilar Vega, F., N. Mukherjee, R. Carter, J. Fuerst, and F. Diepold. "Three-level GaN inverter with SiC diodes for a possible three-phase high power solution." Journal of Engineering 2019, no. 17 (June 1, 2019): 4461–65. http://dx.doi.org/10.1049/joe.2018.8096.

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Sato, Shinji, Kohei Matsui, Yusuke Zushi, Yoshinori Murakami, Satoshi Tanimoto, Hiroshi Sato, and Hiroshi Yamaguchi. "Forced-Air-Cooled 10 kW Three-Phase SiC Inverter with Output Power Density of More than 20 kW/L." Materials Science Forum 679-680 (March 2011): 738–41. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.738.

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A forced-air-cooled three-phase inverter built with SiC-JFETs and -SBDs as power semi-conductor devices was designed and fabricated. The inverter can operate steadily at a rated power of 10 kW in a junction temperature range up to 200°C. Output power density of more than 20 kW/L was achieved. The design specifications, the power module fabrication process, the results of a high-temperature operating test and a continuous switching test are described in turn.

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Ozpineci, Burak, Madhu Sudhan Chinthavali, Leon M. Tolbert, Avinash S. Kashyap, and H. Alan Mantooth. "A 55-kW Three-Phase Inverter With Si IGBTs and SiC Schottky Diodes." IEEE Transactions on Industry Applications 45, no. 1 (2009): 278–85. http://dx.doi.org/10.1109/tia.2008.2009501.

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Jegal, Jun-Hyeok, Minho Kwon, Chang-Yeol Oh, Kiryong Kim, and Jong-Pil Lee. "Implementation of three-phase four-leg inverter using SiC MOSFET for UPS applications." Journal of Power Electronics 21, no. 1 (November 19, 2020): 103–12. http://dx.doi.org/10.1007/s43236-020-00173-w.

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Rąbkowski, Jacek, Hubert Skoneczny, Rafał Kopacz, Przemysław Trochimiuk, and Grzegorz Wrona. "A Simple Method to Validate Power Loss in Medium Voltage SiC MOSFETs and Schottky Diodes Operating in a Three-Phase Inverter." Energies 13, no. 18 (September 12, 2020): 4773. http://dx.doi.org/10.3390/en13184773.

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This paper presents an original method of power loss validation in medium-voltage SiC MOSFET (metal–oxide–semiconductor field-effect transistor) modules of a three-phase inverter. The base of this method is a correct description of the on-state performance of the diodes and the transistors in a PWM (pulse width modulation)-controlled inverter phase leg. Combined electro-thermal calculations are applied to precisely estimate the losses in the power devices and then, to find the suitable circuit parameters of a test circuit to emulate these conditions. A simple square-wave-controlled half-bridge with an inductive load enables the electrical and thermal stresses comparable to these in the inverter, and moreover, provided equations that confirmed the possibility of balancing the load between the diodes and the transistors. The circuit with 3.3 kV SiC MOSFETs was tested to verify the impact of selected parameters on power losses with the main focus on duty ratio. The same module was applied, in addition to an inductive load (3 × 112 μH) and two sets of DC-link capacitors (750 μF), to validate a phase leg of a 220 kVA inverter. In spite of a significantly apparent power, the active power delivered from the DC supply settled around 1 kW, which was enough to emulate 390 W of losses in two transistors and diodes.

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Colussi, Jacopo, Alessandro La Ganga, Roberto Re, Paolo Guglielmi, and Eric Armando. "100 kW Three-Phase Wireless Charger for EV: Experimental Validation Adopting Opposition Method." Energies 14, no. 8 (April 10, 2021): 2113. http://dx.doi.org/10.3390/en14082113.

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This paper presents the experimental validation, using the opposition method, of a high-power three-phase Wireless-Power-Transfer (WPT) system for automotive applications. The system under test consists of three coils with circular sector shape overlapped to minimize the mutual cross-coupling, a three-phase inverter at primary side and a three-phase rectifier at receiver side. In fact thanks to the delta configuration used to connect the coils of the electromagnetic structure, a three-phase Silicon Carbide (SiC) inverter is driving the transmitter side. The resonance tank capacitors are placed outside of the delta configuration reducing in this way their voltage sizing. This WPT system is used as a 100 kW–85 kHz ultrafast battery charger for light delivery vehicle directly supplied by the power grid of tramways. The adopted test-bench for the WPT charger consists of adding circulating boost converter to the system under test to perform the opposition method technique. The experimental results prove the effectiveness of the proposed structure together with the validation of fully exploited simulation analysis. This is demonstrated by transferring 100 kW with more than 94% DC-to-DC efficiency over 50 mm air gap in aligned conditions. Furthermore, testing of Zero-Current and Zero-Voltage commutations are performed to test the performance of SiC technology employed.

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Concari, Luca, Davide Barater, Andrea Toscani, Carlo Concari, Giovanni Franceschini, Giampaolo Buticchi, Marco Liserre, and He Zhang. "Assessment of Efficiency and Reliability of Wide Band-Gap Based H8 Inverter in Electric Vehicle Applications." Energies 12, no. 10 (May 20, 2019): 1922. http://dx.doi.org/10.3390/en12101922.

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This paper analyzes the performance of a three-phase converter architecture with a reduced common mode voltage to be used in electric motor drives. Starting from the classical three-phase bridge architecture, two additional switches are inserted in the DC link, in order to decouple the source from the load during the freewheeling intervals. Ad-hoc modulation strategies are introduced and evaluated against the classical three-phase space vector modulation. Three main parameters are analyzed: common mode voltage, efficiency and reliability. Experimental measurements on a converter prototype are used to evaluate the common mode performance. The efficiency in the case of Si-IGBT and SiC-MOSFETs is experimentally evaluated. Reliability analysis performed with a Coffin-Mason model showed that the higher efficiency offered by the SiC devices allows for a marked extension of the lifetime.

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Dubois, Fabien, Dominique Bergogne, Damien Risaletto, Rémi Robutel, Hervé Morel, Régis Meuret, and Sonia Dhokkar. "High Temperature Inverter for Airborne Application." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000222–27. http://dx.doi.org/10.4071/hitec-fdubois-wa23.

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This paper reports the design, fabrication and experimental performance of a 2kW, 20kHz, High Temperature, three-phase, all-SiC JFET Voltage Source Inverter (VSI). The inverter includes a specific JFET driver and a DC-link capacitor. All these elements have been validated over a wide temperature range, between 25°C and 200°C. The power device used, a 1200V, 15A, JFET from SiCED has been characterized up to 200°C. An innovative reliable protection circuit for normally-on devices is also presented and validated.

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Ali, Ahmed Ismail M., Cao Anh Tuan, Takaharu Takeshita, Mahmoud A. Sayed, and Zuhair Muhammed Alaas. "Modular Single-Stage Three-Phase Flyback Differential Inverter for Medium/High-Power Grid Integrated Applications." Sensors 22, no. 5 (March 7, 2022): 2064. http://dx.doi.org/10.3390/s22052064.

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This paper proposes a single-stage three-phase modular flyback differential inverter (MFBDI) for medium/high power solar PV grid-integrated applications. The proposed inverter structure consists of parallel modules of flyback DC-DC converters based on the required power level. The MFBDI offers many features for renewable energy applications, such as reduced components, single-stage power processing, high-power density, voltage-boosting property, improved footprint, flexibility with modular extension capability, and galvanic isolation. The proposed inverter has been modelled, designed, and scaled up to the required application rating. A new mathematical model of the proposed MFBDI is presented and analyzed with a time-varying duty-cycle, wide-range of frequency variation, and power balancing in order to display its grid current harmonic orders for grid-tied applications. In addition, an LPF-based harmonic compensation strategy is used for second-order harmonic component (SOHC) compensation. With the help of the compensation technique, the grid current THD is reduced from 36% to 4.6% by diminishing the SOHC from 51% to 0.8%. Moreover, the SOHC compensation technique eliminates third-order harmonic components from the DC input current. In addition, a 15% parameters mismatch has been applied between the flyback parallel modules to confirm the modular operation of the proposed MFBDI under modules divergence. In addition, SiC MOSFETs are used for inverter switches implementation, which decrease the inverter switching losses at high-switching frequency. The proposed MFBDI is verified by using three flyback parallel modules/phase using PSIM/Simulink software, with a rating of 5 kW, 200 V, and 50 kHz switching frequency, as well as experimental environments.

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Bernacki, Krzysztof, and Zbigniew Rymarski. "The Experimentally Measured Influence of the Si-MOSFET Replacement Switches to WBG Transistors in the Voltage Source Inverters as the Source of Radiation Noise." Energies 16, no. 2 (January 12, 2023): 870. http://dx.doi.org/10.3390/en16020870.

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The aim of the paper is to present the change in the radiation noise of the single-phase voltage source inverter (VSI) when the Si-MOSFET transistors are replaced by the wide-band-gap (WBG) SiC-MOSFET and GaN transistors. The power spectral density of the near-field interference is used to visualise the change of the radiation noise of the VSI. The conclusions concern the results of the experimental replacement of the switches to the WBG technology in the existing inverters. Three switching frequencies and two gate circuits were used to show the change in the radiation noise. The measurements of the experimental VSI are presented.

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Skibinski, G., D. Braun, D. Kirschnik, and R. Lukaszewski. "Developments in Hybrid Si – SiC Power Modules." Materials Science Forum 527-529 (October 2006): 1141–47. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1141.

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This paper investigates utilization of silicon carbide (SiC) Schottky power diodes as inverter Free Wheel Diodes (FWD) in a commercially available standard Econopak module also packaged with latest generation low-loss IGBT silicon. Static and switching characteristics of SiC diodes over standard module operating temperature 25 0C to 125 0C (298 0K - 398 0K) are measured. Module Turn-on, Turn-off and conduction losses vs. frequency are calculated and measured for three phase motor drive operation. Measurements are compared to standard modules using all Silicon (Si) IGBT- diode. System benefits justifying the increased SiC diode cost, such as EMI reduction, increased efficiency, reduced magnetic filter volume and reduced cooling requirements at higher allowable switching frequencies is investigated.

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Wright, W., J. Carter, P. Alexandrov, M. Pan, M. Weiner, and J. H. Zhao. "Comparison of Si and SiC diodes during operation in three-phase inverter driving ac induction motor." Electronics Letters 37, no. 12 (2001): 787. http://dx.doi.org/10.1049/el:20010535.

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Chen, Jianliang, Deshang Sha, Jiankun Zhang, and Xiaozhong Liao. "An SiC MOSFET Based Three-Phase ZVS Inverter Employing Variable Switching Frequency Space Vector PWM Control." IEEE Transactions on Power Electronics 34, no. 7 (July 2019): 6320–31. http://dx.doi.org/10.1109/tpel.2018.2874036.

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Mecke, R. "Multilevel inverter with active clamping diodes for energy efficiency improvement." Renewable Energy and Power Quality Journal 20 (September 2022): 138–42. http://dx.doi.org/10.24084/repqj20.245.

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Multilevel inverters can replace commonly used two-level inverters for three-phase electrical drives. In this lowvoltage range new wide-bandgap power switches (SiC MOSFET, GaN FET) are available. In the four-, five- and sevenlevel inverters, the majority of the power losses are caused by the threshold voltage of the clamping diodes. The new idea is the replacement of the clamping diodes by active switches, since they only have low on-resistance in the forward direction. In this case freewheeling paths of the clamping diodes would have to be actively switched. However, the control signals for the clamping switches can be generated by logic operations from the control signals for the main switches. The use of active clamping switches has significant potential to reduce semiconductor losses, but requires the development of wide-bandgap power semiconductors with reverse blocking capability. At nominal motor operation point of the 5.5 kW induction motor a loss reduction of 56 % between active clamping switches and clamping diodes is possible. With a higher number of inverter levels, the size of the motor filter can be reduced by about 70 % and also the losses can be reduced by 73 %.

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Ma, Chao-Tsung, and Zhi-Yuan Zheng. "Design and Implementation of a SiC-Based Multifunctional Back-to-Back Three-Phase Inverter for Advanced Microgrid Operation." Micromachines 14, no. 1 (January 3, 2023): 134. http://dx.doi.org/10.3390/mi14010134.

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Because of the worldwide trend of microgrid (MG) and renewable energy (RE)-based distributed power generation (DG), advanced power flow control schemes with wide bandgap (WBG) semiconductor technologies to ensure high-level performance of grid-connected MGs is one of the crucial research topics. In grid-connected MGs, a static switch (SS) is commonly used at the point of common coupling (PCC) of two systems. In this paper, the role of SS is replaced by a SiC-based three-phase back-to-back (BTB) inverter system for seamless switching between grid-connected and standalone modes through advanced power flow control schemes. According to scenarios of different grid/load conditions and available DG capacities in an MG, various advanced control functions can be developed for both MG operating modes: bidirectional control of active and reactive power flows, seamless switching between operating modes, improvement of grid power quality (PQ), and voltage stabilization. In this paper, mathematical models of the BTB inverter in a synchronous reference frame (SRF) is first derived, and the required controllers are then designed. For functional testing, two typical cases are simulated and analyzed in a MATLAB/Simulink environment and then verified through 1kVA small-scale hardware implementation with Texas Instruments (TI) digital signal processor (DSP) TMS320LF2812 as the control core. Results show satisfactory performances of power flow control and PQ improvement of MG.

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Barbagallo, Carmelo, Santi Agatino Rizzo, Giacomo Scelba, Giuseppe Scarcella, and Mario Cacciato. "On the Lifetime Estimation of SiC Power MOSFETs for Motor Drive Applications." Electronics 10, no. 3 (January 30, 2021): 324. http://dx.doi.org/10.3390/electronics10030324.

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This work presents a step-by-step procedure to estimate the lifetime of discrete SiC power MOSFETs equipping three-phase inverters of electric drives. The stress of each power device when it is subjected to thermal jumps from a few degrees up to about 80 °C was analyzed, starting from the computation of the average power losses and the commitment of the electric drive. A customizable mission profile was considered where, by accounting the working conditions of the drive, the corresponding average power losses and junction temperatures of the SiC MOSFETs composing the inverter can be computed. The tool exploits the Coffin–Manson theory, rainflow counting, and Miner’s rule for the lifetime estimation of the semiconductor power devices. Different operating scenarios were investigated, underlying their impact on the lifetime of SiC MOSFETs devices. The lifetime estimation procedure was realized with the main goal of keeping limited computational efforts, while providing an effective evaluation of the thermal effects. The method enables us to set up any generic mission profile from the electric drive model. This gives us the possibility to compare several operating scenario of the drive and predict the worse operating conditions for power devices. Finally, although the lifetime estimation tool was applied to SiC power MOSFET devices for a general-purpose application, it can be extended to any type of power switch technology.

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Qi, Feng, Miao Wang, and Longya Xu. "Investigation and Review of Challenges in a High-Temperature 30-kVA Three-Phase Inverter Using SiC MOSFETs." IEEE Transactions on Industry Applications 54, no. 3 (May 2018): 2483–91. http://dx.doi.org/10.1109/tia.2018.2796059.

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Ahmed, Mohammed Hassan, Mingyu Wang, Muhammad Arshad Shehzad Hassan, and Irfan Ullah. "Power Loss Model and Efficiency Analysis of Three-Phase Inverter Based on SiC MOSFETs for PV Applications." IEEE Access 7 (2019): 75768–81. http://dx.doi.org/10.1109/access.2019.2922741.

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Zhao, Jian Hui, Petre Alexandrov, Yu Zhu Li, Larry X. Li, Kuang Sheng, and Ramon Lebron-Velilla. "Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs." Materials Science Forum 527-529 (October 2006): 1191–94. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1191.

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This paper reports recent progress in the development of a vertical JFET, the purely vertical JFET based on trenched-and-implanted vertical JFET (TI-VJFET) approach that eliminates the need of epitaxial regrowth at middle of device fabrication and the need of a merged lateral JFET to control the vertical JFET. Different structures have been designed to target breakdown voltages ranging from 600V to 1.2kV. Vertical channel width uniformity has been studied, showing the feasibility of achieving below 0.1um variation for reasonably flat wafers of good thickness uniformity. Pitch size of the designs has been reduced compared to early report. Gate trench width has been reduced from 3.8um to 2.3um, aimed at increasing the device current capability. Fabricated device cells have been tested and packaged into multi-cell 30A TI-VJFETs which have been characterized of DC and switching characteristics at room and elevated temperatures. Very fast current rise/fall times of <10ns were observed from RT to 200°C. PSpice model for TI-VJFET has been developed and applied to the performance prediction of 3-phase SiC power inverter, suggesting a high efficiency 97.7% at 200°C junction temperature without using soft-switching scheme. Preliminary experimental demonstration of a PWM-controlled three-phase inverter based on SiC TI-VJFET power board is reported.

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Colussi, Jacopo, Roberto Re, and Paolo Guglielmi. "Modelling and Design of a Coils Structure for 100 kW Three-Phase Inductive Power Transfer System." Energies 15, no. 14 (July 12, 2022): 5079. http://dx.doi.org/10.3390/en15145079.

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This paper presents the modeling, the design and verification of a three-phase coil structure for high-power Wireless-Power-Transfer (WPT) in automotive applications. The system, a Three-Polar-Pad (TPP), with complex mechanical geometry, is analytically modeled with an equivalent simplified structure. Thanks to this simplification, a numerical design is performed to minimize cross-coupling effects among different phases of the same side (receiver or transmitter) maximizing the linkage flux receiver-to-transmitter and then the power transferred. The analytical model is then verified in a Finite-Element-Analysis (FEA) environment. A final design, comprehensive of the shielding, is proposed matching the preliminary design constraints. Hence, the preliminary model is verified by testing a prototype using a three-phase Silicon Carbide (SiC) inverter at the transmitter side. The capability of the system is demonstrated by transferring 100 kW with more than 94% DC-to-DC efficiency over a 50 mm air gap in perfectly aligned conditions.

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Acosta-Cambranis, Fernando, Jordi Zaragoza, Luis Romeral, and Néstor Berbel. "Comparative Analysis of SVM Techniques for a Five-Phase VSI Based on SiC Devices." Energies 13, no. 24 (December 14, 2020): 6581. http://dx.doi.org/10.3390/en13246581.

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Multiphase systems provides benefits compared to three-phase systems, such as improved torque per ampere, high power density, better fault tolerance, lower current per phase (due to power-splitting among a higher number of phases), and lower torque ripple, among others. Depending on the application, the system must meet determined requirements, such as the presence of harmonic content, power losses, and common-mode voltage (CMV) generation. This paper presents a comparative analysis of space vector modulation (SVM) techniques applied to a five-phase voltage source inverter with SiC switches to provide an overview of their performance. The performance of five-phase 2L SVPWM (space vector pulse width modulation), 2L+2M SVPWM, 4L SVPWM techniques, and their discontinuous versions, are analyzed by focusing on harmonic content, power losses, and CMV generation using SiC semiconductor devices. Matlab/Simulink and PLECS simulations are performed to achieve the above mentioned goal. The use of different techniques allows (1) reducing the harmonic distortion when 2L+2M SVPWM and 4L SVPWM are applied, and (2) the switching sequence of the modulation techniques can influence the switching losses. Therefore, the use of SiC switches reduces the switching losses. (3) However, CMV dv/dt increases. Therefore, it is possible to minimize the effects of the CMV dv/dt and amplitude by choosing the adequate technique.

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Haider, Michael, Simon Fuchs, Grayson Zulauf, Dominik Bortis, Johann W. Kolar, and Yasuo Ono. "Analytical Loss Model for Three-Phase 1200V SiC MOSFET Inverter Drive System Utilizing Miller Capacitor-Based dv/dt-Limitation." IEEE Open Journal of Power Electronics 3 (2022): 93–104. http://dx.doi.org/10.1109/ojpel.2022.3143995.

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Mhiesan, Haider, Janviere Umuhoza, Kenneth Mordi, Chris Farnell, and H. Alan Mantooth. "Evaluation of 1.2 kV SiC MOSFETs in multilevel cascaded H-bridge three-phase inverter for medium-voltage grid applications." Chinese Journal of Electrical Engineering 5, no. 2 (June 2019): 1–13. http://dx.doi.org/10.23919/cjee.2019.000007.

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Liu, Yitao, Shiqi Jiang, Dianheng Jin, and Jianchun Peng. "Performance comparison of Si IGBT and SiC MOSFET power devices based LCL three‐phase inverter with double closed‐loop control." IET Power Electronics 12, no. 2 (January 14, 2019): 322–29. http://dx.doi.org/10.1049/iet-pel.2018.5702.

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Ma, Chao-Tsung, and Zhen-Huang Gu. "Investigation on GaN HEMTs Based Three-Phase STATCOM with Hybrid Control Scheme." Micromachines 12, no. 4 (April 20, 2021): 464. http://dx.doi.org/10.3390/mi12040464.

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The modern trend of decarbonization has encouraged intensive research on renewable energy (RE)-based distributed power generation (DG) and smart grid, where advanced electronic power interfaces are necessary for connecting the generator with power grids and various electrical systems. On the other hand, modern technologies such as Industry 4.0 and electrical vehicles (EV) have higher requirements for power converters than that of conventional applications. Consequently, the enhancement of power interfaces will play an important role in the future power generation and distribution systems as well as various industrial applications. It has been discovered that wide-bandgap (WBG) switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) offer considerable potential for outperforming conventional silicon (Si) switching devices in terms of breakdown voltage, high temperature capability, switching speed, and conduction losses. This paper investigates the performance of a 2kVA three-phase static synchronous compensator (STATCOM) based on a GaN HEMTs-based voltage-source inverter (VSI) and a neural network-based hybrid control scheme. The proportional-integral (PI) controllers along with a radial basis function neural network (RBFNN) controller for fast reactive power control are designed in synchronous reference frame (SRF). Both simulation and hardware implementation are conducted. Results confirm that the proposed RBFNN assisted hybrid control scheme yields excellent dynamic performance in terms of various reactive power tracking control of the GaN HEMTs-based three-phase STATCOM system.

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Abed Ali, Fatme, Yvan Avenas, Pierre Lefranc, Pierre Olivier Jeannin, Hadi Alawieh, Toni Youssef, and Hassan Moussa. "Design of an Integrated Power Module for Silicon Carbide MOSFET with Self-Compensation of the Magnetic Field." Materials Science Forum 1062 (May 31, 2022): 637–41. http://dx.doi.org/10.4028/p-gvcp58.

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Compactness, efficiency, and light weight are the key topics in the design of power conversion systems for transportation applications. This demand is achievable by using wide band gap devices such as SiC devices, characterized by the high switching speed and low on-resistance. However, this trend imposes new challenges and the effect of parasitic elements of power package during switching transient becomes significant. Hence, new packaging solutions should be investigated for addressing this concern. This paper presents a new multichip power module architecture, where its design considering capacitive and inductive stray elements is carried out. Using Ansys Q3D Extractor, electromagnetic simulations are achieved to extract the inductive and capacitive parasitic element of one leg of a three-phase inverter.

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Elsayad, Nour, Hadi Moradisizkoohi, and Osama Mohammed. "A New Three-Level Flying-Capacitor Boost Converter with an Integrated LC2D Output Network for Fuel-Cell Vehicles: Analysis and Design." Inventions 3, no. 3 (August 28, 2018): 61. http://dx.doi.org/10.3390/inventions3030061.

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In this paper, a new three-level boost converter with continuous input current, common ground, reduced voltage stress on the power switches, and wide voltage gain range is proposed. The proposed converter is composed of a three-level flying-capacitor switching cell and an integrated LC2D output network. The LC2D output network enhances the voltage gain of the converter and reduces the voltage stress on the power switches. The proposed converter is a good candidate to interface fuel cells to the dc-link bus of the three-phase inverter of an electric vehicle (EV). A full steady-state analysis of the proposed converter in the continuous conduction mode (CCM) is given in this paper. A 1.2 kW scaled-down laboratory setup was built using gallium nitride (GaN) transistors and silicon carbide (SiC) diodes to verify the feasibility of the proposed converter.

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Perrin, Rémi, Dominique Bergogne, Christian Martin, and Bruno Allard. "GaN Power Module with High Temperature Gate Driver and Insulated Power Supply." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (January 1, 2014): 000198–205. http://dx.doi.org/10.4071/hitec-wp11.

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Emerging GaN power switches show advantages for integration in power modules at high temperature and/or high efficiency. These modules are good candidates for embedded power converters in harsh environment such as three phase inverters for Electro-Mechanical Actuators (EMA) in the vicinity of internal combustion engines. The power range is usually within 1 to 5 kW, extending sometimes up to 50 kW, using a high voltage DC bus (HVDC) that is usually comprised between 200 V and 600 V. For aeronautical applications, GaN power switches could challenge SiC transistors for their high switching speed, hence reduced switching losses, therefore lower embarked mass. For automotive applications, it is the relative promise for lower cost per Amp that is pushing this technology up. This is why a project joining GaN device conception, power module development and gate driver optimization using high temperature technologies was set-up. This paper presents the first practical results: a functional GaN power inverter-leg driven by a specific high temperature gate driver with signal and power insulation. This building block requires an auxiliary DC supply with a input voltage of 14 V or 28 V and an external PWM control signal. Current rating is 20 A and breakdown voltage is 200 V.

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Ma, Chao-Tsung, and Yi-Hung Tian. "Design and Implementation of a SiC-Based VRFB Power Conditioning System." Micromachines 11, no. 12 (December 12, 2020): 1099. http://dx.doi.org/10.3390/mi11121099.

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An energy storage system using secondary batteries combined with advanced power control schemes is considered the key technology for the sustainable development of renewable energy-based power generation and smart micro-grids. The performance of energy storage systems in practical application mainly depends on their power conditioning systems. This paper proposes a silicon carbide-based multifunctional power conditioning system for the vanadium redox flow battery. The proposed system is a two-stage circuit topology, including a three-phase grid-tie inverter that can perform four-quadrant control of active and reactive power and a bi-directional multi-channel direct current converter that is responsible for the fast charging and discharging control of the battery. To achieve the design objectives, i.e., high reliability, high efficiency, and high operational flexibility, silicon carbide-based switching devices, and advanced digital control schemes are used in the construction of a power conditioning system for the vanadium redox flow battery. This paper first describes the proposed system topologies and controller configurations and the design methods of controllers for each converter in detail, and then results from both simulation analyses and experimental tests on a 5 kVA hardware prototype are presented to verify the feasibility and effectiveness of the proposed system and the designed controllers.

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Sun, Shaojie, and Bubo Zhu. "Main Circuit Topology and Electromagnetic Interference of Electric Vehicle Bidirectional Charger." Journal of Control Science and Engineering 2022 (October 3, 2022): 1–7. http://dx.doi.org/10.1155/2022/9507377.

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In order to improve the electromagnetic compatibility performance of electric vehicle bidirectional chargers, the authors propose a main circuit topology and electromagnetic interference of the electric vehicle bidirectional charger. The design adopts the parallel connection of silicon carbide (SiC) MOSFETs and completes the bidirectional charging system based on the cascade connection of dual active bridge (DAB) and three-phase four-wire inverter. This paper mainly analyzes the influence of parasitic inductance on the drive and power loop of the T0-247 packaged switch in actual use, and according to the operating characteristics of the system, different gate resistors are used to reduce switching losses and improve system efficiency. And, we explore on how to reduce the overshoot voltage through the RC absorption circuit, thereby reducing the conducted interference. The result shows the following: the primary side absorption circuit resistance is 470 Ω and the capacitor is 47 nf, the secondary side absorption circuit resistance is 40 Ω and the capacitance is 4.7 nf, and the circuit power is 5000 W. Under the same conditions, without adding the RC absorption circuit, the conducted interference on the AC side does not meet the standard, and the amount of disturbance is large. After adding a suitable RC absorption circuit, the conducted interference on the AC side reaches the required value. Conclusion. This research provides a systematic design scheme and optimization method for designing power electronic devices using SiC.

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Ali, Ahmed Ismail M., Takaharu Takeshita, and Mahmoud A. Sayed. "In depth mathematical-analysis and experimentation of high-power SiC-FET based single-stage three-phase differential-based flyback inverter with practical design issues for grid-tied applications." International Journal of Electrical Power & Energy Systems 140 (September 2022): 108041. http://dx.doi.org/10.1016/j.ijepes.2022.108041.

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Duan, Zhuolin, Tao Fan, Dong Zhang, and Xuhui Wen. "Differential Mode Conducted EMI Prediction in Three Phase SiC Inverters." IOP Conference Series: Materials Science and Engineering 199 (May 2017): 012126. http://dx.doi.org/10.1088/1757-899x/199/1/012126.

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Matsui, Kohei, Yusuke Zushi, Yoshinori Murakami, Satoshi Tanimoto, and Shinji Sato. "A Compact 5-nH One-Phase-Leg SiC Power Module for a 600V-60A-40W/cc Inverter." Materials Science Forum 717-720 (May 2012): 1233–36. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1233.

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We have developed a small-volume, high-power-output inverter with a high output power density using SiC power devices. To fully utilize the advantages of SiC power devices, it is necessary to reduce the inductance of the power module. This is done by using a double-layer ceramic substrate, attaining a low inductance of 5 nH. A double pulse test was carried out up to 60 A under a DC voltage of 600 V. The low inductance greatly reduced the surge voltage and the oscillation at the switching transient. The SiC inverter with a volume of 250 cc was assembled using three of the power modules. The cooling performance of the inverter was evaluated at a loss equivalent to an output power of 10 kW, and it was found that the inverter can output 10 kW at a junction temperature (Tj) of about 200°C.

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Mohamed Ali, Jagabar Sathik Mohamed, and Dhafer Almakhles. "A Compact Five-Level Single-Stage Boost Inverter." Energies 16, no. 3 (January 20, 2023): 1181. http://dx.doi.org/10.3390/en16031181.

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This article presents a single-stage five-level boost inverter (5L-SBI) topology with reduced power components. The proposed topology falls under the self-balanced switch-capacitors (SCs) type and combines both a DC/DC boost converter and inverter with a switched-capacitor cell. The advantages of proposed topologies include the following: the number of switch counts is reduced, the maximum voltage gain is two times higher than the input voltage, and the capacitor’s charging current is suppressed. Further, the proposed topology cascaded, and three-phase extensions are presented. To attest, the advantages of the proposed topology are thoroughly compared with other recent SCI topologies. The proposed topology is verified under dynamic loading conditions, and the results are presented, considering a 600 W laboratory prototype model.

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Rasyid, Ramly, Miftah Muhammad, and Rahman R. Rasyid. "Pengaturan Kecepatan Motor Induksi Tiga Fasa Menggunakan Spwm Inverter dan Kontrol Pid dengan Metode Hibrid Volt/Herzt Konstan-Sensor Arus." PROtek : Jurnal Ilmiah Teknik Elektro 9, no. 1 (May 20, 2022): 57. http://dx.doi.org/10.33387/protk.v9i1.4201.

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Three-phase induction motors are often used in every industry because three-phase induction motors are relatively cheap. On the three-phase induction motor in order to get a varied speed, one of the methods is the Three-Phase Induction Motor Speed Setting Using SPWM Inverter And Hybrid Volt/Herzt Constant-Sensor Current-Density PID Control in order to maintain the speed of the motor. This simulation was carried out with Matlab 2007 software. Induction motor speed performance set with a set point of 100 rad/detm 140 rad/sec, and 200 rad.det is a consecutive rise time of 0.002 seconds, 0.00116 seconds, and 0.006 seconds, a maximum overshoot of 5.4%, 1.25%, and 0.875% respectively and 0.1518 seconds, 0.1464 seconds, and 0.15 seconds respectively. The response torkanya values between 75 Nm, 90 Nm, and 100 Nm respectively, while the performance of the insulated current is very small

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Zhang, Lei, Xibo Yuan, Jiahang Zhang, Xiaojie Wu, Yonglei Zhang, and Chen Wei. "Modeling and Implementation of Optimal Asymmetric Variable Dead-Time Setting for SiC MOSFET-Based Three-Phase Two-Level Inverters." IEEE Transactions on Power Electronics 34, no. 12 (December 2019): 11645–60. http://dx.doi.org/10.1109/tpel.2019.2905882.

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Bergogne, Dominique, Fabien Dubois, Christian Martin, Khalil El Falahi, Luong Viet Phung, Cyril Buttay, Sonia Dhokkar, Bruno Allard, Régis Meuret, and Hervé Morel. "An Airborne High Temperature SiC Power Converter for Medium Power Smart Electro Mechanical Actuators." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, HITEC (January 1, 2012): 000388–93. http://dx.doi.org/10.4071/hitec-thp14.

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Normally-On Silicon Carbide (SiC) JFETs are good candidates for power switches in high temperature applications, in Three-Phase Voltage-Fed Inverters used to drive Electro-Mechanical Actuators (EMA) for the more electrical aircraft where the ambient varies from −55 °C to 200 °C. The power of the EMA is in the 1 to 5 kW range, the DC bus voltage is 540 V. It is also necessary to implement passive subsystems such as Electro-Magnetic-Interference (EMI) filters, power inductors, transformers, packaging and interconnection solution that withstand the wide temperature range. The gate driver for normally-On devices must include a safe solution against short-circuit in the event of a power supply failure. The experimental converter is built using engineering samples such as SiC JFETs, SOI drivers and laboratory made components such as inductive wire wound, nano-crystalline core components, SOI integrated driver, assembled with a high temperature package and technology. Finally, the Smart EMA test bench is presented.

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Journal articles on the topic 'Three-phase SiC Inverter'

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