Relevant bibliographies by topics / Thin materials

Academic literature on the topic 'Thin materials'

Author: Grafiati
Published: 10 December 2022
Last updated: 29 January 2023

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Journal articles on the topic "Thin materials"

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Horiuchi, Noriaki. "Atomically thin materials." Nature Photonics 12, no. 11 (October 26, 2018): 641. http://dx.doi.org/10.1038/s41566-018-0294-1.

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Lara-Padilla, E., Maximino Avendano-Alejo, and L. Castaneda. "Transparent Conducting Oxides: Selected Materials for Thin Film Solar Cells." International Journal of Science and Research (IJSR) 11, no. 7 (July 5, 2022): 372–80. http://dx.doi.org/10.21275/sr22628033513.

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Ishii, Hitoshi, Yohei Taguchi, Kazuo Ishii, and Hirofumi Akagi. "OS11W0239 Ultrasonic bending fatigue testing method for thin sheet materials." Abstracts of ATEM : International Conference on Advanced Technology in Experimental Mechanics : Asian Conference on Experimental Mechanics 2003.2 (2003): _OS11W0239. http://dx.doi.org/10.1299/jsmeatem.2003.2._os11w0239.

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Wellen, M. "8.1 Thin-layer Materials." Materials Science Forum 366-368 (March 2001): 549–59. http://dx.doi.org/10.4028/www.scientific.net/msf.366-368.549.

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Tsebrenko, M. V., N. M. Rezanova, and T. I. Sizevich. "Thin-fibre filtering materials." Fibre Chemistry 24, no. 1 (January 1992): 4–7. http://dx.doi.org/10.1007/bf00557167.

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Donges, Axel. "Measuring Extra-thin Materials." Optik & Photonik 9, no. 2 (May 2014): 52–54. http://dx.doi.org/10.1002/opph.201400043.

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Tang, Wen, Tao Ruan Wan, and Donjing Huang. "Interactive thin elastic materials." Computer Animation and Virtual Worlds 27, no. 2 (June 5, 2015): 141–50. http://dx.doi.org/10.1002/cav.1666.

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Noudem, Jacques G. "Superconducting materials by design: Bulk with artificial thin walls as cryo-magnets." Mechanik, no. 2 (February 2015): 124/13–124/23. http://dx.doi.org/10.17814/mechanik.2015.2.73.

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Lavine, Marc S. "A family of thin materials." Science 372, no. 6547 (June 10, 2021): 1162.10–1164. http://dx.doi.org/10.1126/science.372.6547.1162-j.

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García de Abajo, F. Javier, and Alejandro Manjavacas. "Plasmonics in atomically thin materials." Faraday Discussions 178 (2015): 87–107. http://dx.doi.org/10.1039/c4fd00216d.

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The observation and electrical manipulation of infrared surface plasmons in graphene have triggered a search for similar photonic capabilities in other atomically thin materials that enable electrical modulation of light at visible and near-infrared frequencies, as well as strong interaction with optical quantum emitters. Here, we present a simple analytical description of the optical response of such kinds of structures, which we exploit to investigate their application to light modulation and quantum optics. Specifically, we show that plasmons in one-atom-thick noble-metal layers can be used both to produce complete tunable optical absorption and to reach the strong-coupling regime in the interaction with neighboring quantum emitters. Our methods are applicable to any plasmon-supporting thin materials, and in particular, we provide parameters that allow us to readily calculate the response of silver, gold, and graphene islands. Besides their interest for nanoscale electro-optics, the present study emphasizes the great potential of these structures for the design of quantum nanophotonics devices.
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Dissertations / Theses on the topic "Thin materials"

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Hu, Jingping. "Electronic Thin Film Materials." Thesis, University of Oxford, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.491618.

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This thesis is concerned with investigations of the features of two types of electronic thin film materials: chemical vapour deposition (CVD) diamond and copper oxide based materials. CVD Diamond possesses excellent electrochemical properties. This thesis was concerned with investigating the fabrication and electrochemical properties of certain such diamond electrodes. The fabrication of diamond Ultramicroelectrodes (UMEs) was explored by coating tungsten needles with CVD diamond film under optimised. conditions, followed by selective insulation with different media. It was found that small grain diamond made the best electrode; large grain diamond coatings suffered from electrolyte leakage whereas nanodiamond had poor electrochemical properties. A range of tip insulation methods were examined, with most defined tips being produced by insulation with electrophoretic paint, followed by milling using Focused Ion Beam (FIB) methods. The utility of the tips prepared in this way in the SECM was demonstrated by imaging in biological media. The use of electrical conductive diamond as optically transparent electrode (OTE) opens novel applications for spectroelectrochemical studies due to the superior properties of diamond. The HFCVD diamond growth on fused silica quartz, ITO and AZO substrates was explored. The diamond membrane/ ITO structure was proposed and fabricated, exhibiting the best combination of optical transparency and electrical conductivity. Finally the changes in electrode properties as the diamond varied from macrocrystalline to nanocrystalline morphologies were studied. The second material investigated is copper oxide, specifically, cuprite (CU20) and SrCu202, a ternary Cu(I) oxide with a direct bandgap that arouses widespread interest as a p-type TCO. Their electronic structure and the nature of the hole charge carriers are topics of major current interest. The valence band and conduction band of both materials were studied by XPS in Daresbury, and XAS and XES measurements in ALS. The spectra are in good agreement with the PDOS from B3LYP calculations, showing strong hybridisation between Cu 3d and 0 2p states. Resonant Inelastic X-ray Scattering (RIXS) due to interband excitation close to Cu L3 edge threshold was first observed, conforming selection rule .6.L=O. This is the first observation of RIXS in close shell compound (dIO ). The UPS spectra of SrCu202 were measured with synchrotron radiation, and the changes in intensities of spectral features with varying photon energy were used to distinguish the contribution of 0 2p and Cu 3d states. Spectra showed that states at top of valance band are of dominant Cu 3d character and there is strong hybridisation between 0 2p and Cu 3d states which accounts for the hole mobility.
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Murphy, Craig E. "Pyroelectric thin film composite materials." Thesis, University of Oxford, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.260162.

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Neeves, Matthew Kenneth. "Thin film electrochromic materials and devices." Thesis, University of the West of Scotland, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627902.

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This thesis investigates in detail the thin film materials required for the construction of a thin film electrochromic device, their production by vacuum deposition and other techniques, and their characterisation by SEM, XRD, and optical and electrochemical methods, leading to a greater understanding of the materials and considerations required in the design of electrochromic layers and devices constructed with said layers. Working devices consisting of electrochromes, electrolytes and transparent conducting electrodes are constructed by methods and upon a scale that are amenable to commercial-scale production. The hardware and software components of a unique real-time spectroscopic electrochemical characterisation cell are described, which have enabled the novel synchronous collection of wideband optical transmittance and electrochemical information at intervals as small as 20ms. Optimal process conditions for the production of electrochromic transition metal oxides of nickel, titanium, tungsten and the novel nickel-chromium oxide by advanced sputtering and electron-beam evaporation techniques are investigated and described in-depth. For comparison, devices are also constructed using the well-known electrochromic material iron hexacyanoferrate, or 'Prussian Blue'. It is essential for devices intended for eyewear applications that materials are eye-safe and that traffic light recognition is not unduly impaired. The electrochromic performance of individual materials and working devices is reported for all materials and spectroscopic data is used to calculate tristimulus co-ordinates and thus characterise the colour performance of the various materials and devices. Working devices also require transparent conductive electrodes. The transparent conductive oxide indium tin oxide (ITO), as prepared by two different sputtering methods is investigated. The sheet resistance of the ITO is shown to have a significant quantifiable effect upon the switching speed of working devices and this is reported in detail.
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Pearce, Alexander James. "Electromechanical properties of atomically thin materials." Thesis, University of Exeter, 2014. http://hdl.handle.net/10871/15294.

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We discuss the effect of elastic deformations on the electronic properties of atomically thin materials, with a focus on bilayer graphene and MoS2 membranes. In these materials distortions of the lattice translate into fictitious gauge fields in the electronic Dirac Hamiltonian that are explicitly derived here for arbitrary elastic deformations, including in-plane as well as flexural (out-of-plane) distortions. We consider bilayer graphene, where a constant fictitious gauge field causes a dramatic reconstruction of the low energy trigonally warped electronic spectrum inducing topological transitions in the Fermi surface. We then present results of ballistic transport in trigonally warped bilayer graphene with and without strain, with particular focus on noise and the Fano factor. With the inclusion of trigonal warping the Fano factor at the Dirac point is still F = 1/3, but the range of energies which show pseudo diffusive transport increases by orders of magnitude compared to the results stemming out of a parabolic spectrum and the applied strain acts to increase this energy range further. We also consider arbitrary deformations of another two-dimensional membrane, MoS2. Distortions of this lattice also lead to a fictitious gauge field arising within the Dirac Hamiltonian, but with a distinct structure than seen in graphene. We present the full form of the fictitious gauge fields that arise in MoS2. Using the fictitious gauge fields we study the coupling between electronic and mechanical degrees of freedom, in particular the coupling between electrons and excited vibrational modes, or vibrons. To understand whether these effects may have a strong influence on electronic transport in MoS2 we calculate the dimensionless electron-vibron coupling constant for all vibron modes relevant for electronic transport. We find that electron-vibron coupling constant is highly sample specific and that the longitudinal stretching mode is the vibron with the dominant coupling. This however reaches maximum values which are lower than those observed in carbon nanostructures.
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Killian, Tyler Norton Rao S. M. "Numerical modeling of very thin dielectric materials." Auburn, Ala, 2008. http://repo.lib.auburn.edu/EtdRoot/2008/SUMMER/Electrical_and_Computer_Engineering/Thesis/Killian_Tyler_16.pdf.

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Alexiou, I. "Hole transport materials for organic thin films." Thesis, University of Cambridge, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.595437.

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The aim of this project is to prepare and characterise novel triarylamine-based hole transport materials for xerographic applications that exhibit favourable electrochemical properties and amorphous nature. As an introduction, the six steps of the xerographic process and the common classes of hole transporting materials are described. The basic theories that have been developed for charge transport are discussed and an overview of the palladium-mediated amination and Suzuki reactions is given. In the following chapters, the synthesis and characterisation of a number of hole transporting triarylamines is reported. A series of linear trimeric arylamines is synthesised using the palladium-catalysed Suzuki protocol and their properties were determined using cyclic voltammetry, thermal gravimetric analysis and differential scanning calorimetry. Similar characterisation is carried out for a number of relatively unsubstituted phenyl and thiophene-based triarylamines. The synthesis of a series of oligomeric materials based on MPPD (Bis-methoxyphenyl-diphenyl-biphenyl-diamine) is reported and their electrochemical and thermal properties are investigated. Thiophene and dioctyl-fluorene-substituted MPPD-derivatives are studied as hole transport materials. Star-shaped and dendritic triarylamines with biphenyl and bithiophene-core molecules are also prepared using palladium-mediated chemistry and characterised. Finally, the attempts to synthesise macrocyclic triarylamine hole transporting materials are described in detail. The charge carrier properties for some of the synthesised materials are measured using the time-of-flight technique of using field-effect-transistors. Each set-up is described in detail and the hole mobility of the materials is calculated. A correlation between structural characteristics and charge-transporting properties is attempted.
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Baugher, Britton William Herbert. "Electronic transport in atomically thin layered materials." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/91393.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Physics, 2014.
125
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 101-110).
Electronic transport in atomically thin layered materials has been a burgeoning field of study since the discovery of isolated single layer graphene in 2004. Graphene, a semi-metal, has a unique gapless Dirac-like band structure at low electronic energies, giving rise to novel physical phenomena and applications based on them. Graphene is also light, strong, transparent, highly conductive, and flexible, making it a promising candidate for next-generation electronics. Graphene's success has led to a rapid expansion of the world of 2D electronics, as researchers search for corollary materials that will also support stable, atomically thin, crystalline structures. The family of transition metal diclialcogenides represent some of the most exciting advances in that effort. Crucially, transition metal dichalcogenides add semiconducting elements to the world of 2D materials, enabling digital electronics and optoelectronics. Moreover, the single layer variants of these materials can posses a direct band gap, which greatly enhances their optical properties. This thesis is comprised of work performed on graphene and the dichalcogenides MoS 2 and WSe2. Initially, we expand on the family of exciting graphene devices with new work in the fabrication and characterization of suspended graphene nanoelectromnechanical resonators. Here we will demonstrate novel suspension techniques for graphene devices, the ion beam etching of nanoscale patterns into suspended graphene systems, and characterization studies of high frequency graphene nanoelectromechanical resonators that approach the GHz regime. We will then describe pioneering work on the characterization of atomically thin transition metal dichalcogenides and the development of electronics and optoelectronics based on those materials. We will describe the intrinsic electronic transport properties of high quality monolayer and bilayer MoS 2 , performing Hall measurements and demonstrating the temperature dependence of the material's resistivity, mobility, and contact resistance. And we will present data on optoelectronic devices based on electrically tunable p-n diodes in monolayer WSe2 , demonstrating a photodiode, solar cell, and light emitting diode.
by Britton William Herbert Baugher.
Ph. D.
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Kobese, Pakamisa. "Preparation and characterization of metal titanate materials." Thesis, Stellenbosch : Stellenbosch University, 2002. http://hdl.handle.net/10019.1/53016.

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Thesis (MSc)--Stellenbosch University, 2002.
ENGLISH ABSTRACT: Thin films and powders of Ni.Tiï), and CoxTi03 (where x = 0.005 - 0.9) with different stiochiometric ratios were prepared using sol gel techniques. These metal oxides were prepared by spin coating on silicon and titanium substrates followed, by annealing at 400°C and 800°C respectively under a temperature program. A range of films with MxTiOy (where x = 0.005 - 0.9) were prepared and then characterized by optical methods such as Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and Rutherford Backscattering Spectroscopy (RBS). X-ray powder diffraction was also used to determine the structural properties of these metal oxides. XRD pattern peaks showed that the powder forms of these metal oxides were well crystallized. Thin films could be amorphous because strong peaks were not present. For nickel titanates preparation, the best trend is at the low concentration of Ni that is 0.3:1 Ni:Ti. It is pure with no impurities of NiO and Ti02. High concentration of Co ranging from 0.7-1:1 Co:Ti forms a C02Ti04 structure with cubic phase. The best route for the CoTi03 preparation is at the low cobalt concentration that is 0.5:1 Co:Ti. Scanning Electron Microscopy (SEM) shows that a film deposited on silicon or a titanium substrate is smooth, uniform and crack-free. It also shows that a cobalt titanate film deposited on a Si substrate is rough, with cracks, whereas on the Ti substrate, it is smooth, uniform and crack-free. AFM studies show that as the concentration of Ni:Ti is reduced and the roughness of the thin film is increased. SEM, FTIR, XRD and RBS suggest that the 0.3:1 and 0.5:1Ni:Ti films with 10nm and 11nm thickness, respectively, iii Stellenbosch University http://scholar.sun.ac.za iv have the same structure. RBS suggests that the 1:1 and 0.5:1 Co:Ti have C0I.39Ti02.29and CoTi04.2 structures with 13nm and 16nm respectively. XRD reveals that NiTi03 and CoTi03 have rhombohedral crystal structure.
AFRIKAANSE OPSOMMING: Dunlagies en poeiers van NixTi03 en CoxTi03 (waar x = 0.005 - 0.9) met verskillende stoigiometriese verhoudings was voorberei deur gebruik te maak van sol gel tegnieke. Hierdie metaaloksiedes was voorberei deur gebruik te maak van "spin coating" op substrate van silikon en titaan gevolg deur konstante verhitting by 'n 400°C en 800°C temperatuur program onderskeidelik. 'n Reeks van lagies met MxTiOy (waar x = 0.005 - 0.9) was voorberei en gekarakteriseer met optiese metodes soos Skandeer Elektron Mikroskopie (SEM), Atoom Interaksie Mikroskopie (AFM) en "Rutherford Backscattering Spectroscopy (RBS)." X-straal Poeier Diffraksie was ook gebruik om die strukturele eienskappe van hierdie metaaloksiedes te bepaal. XRD patroon pieke wys dat die poeier vorms van hierdie metaaloksiedes goed gekristalliseer was. Dunlagies mag ook amorf wees aangesien sterk pieke nie teenwoordig was nie. Vir nikkel titaniete is hierdie die algemene roete vir die NiTi03 voorbereiding. Die beste tendens is by lae konsentrasies van Ni naamlik 0.3:1 Ni:Ti. Dit is suiwer en het geen onsuiwerhede van NiO en Ti02 nie. Hoë konsentrasies van Co vanaf 0.7 - 1:1 Co:Ti vorm 'n Co2Ti04 struktuur met 'n kubiese fase. Die beste roete vir die CoTi03 voorbereiding is by lae kobalt konsentrasie naamlik 0.5 -1:1 Co:Ti. Skandeer Elektron Mikroskopie (SEM) wys dat 'n NiTi03 laag gedeponeer op silikon en titaan substrate gelyk was, eenvorming en sonder krake. Dit wys ook dat die kobalt titaan laag oppervlakte gedeponeer op 'n silikon substraat grof was en het krake getoon. Vir die Ti substraat het dit gewys dat die oppervlaktes gladwas, univormig en sonder krake. AFM studies wys dat as die konsentrasie Ni:Ti verminder word die grofheid van die dunlaag verminder. SEM, FTIR, XRD en RBS dui aan dat die 0.3:1 en 0.5:1 Ni:Ti dunlaag dieselfde struktuur het met 10nm en 11nm dikte onderskeidelik. RBS dui aan dat die 1:1 en 0.5:1 Co:Ti het C01.39Ti02.29en CoTi04.2 strukture onderskeidelik met 13nm en 16nm diktes. XRD toon aan dat NiTi03 en CoTi03 rhombohedrale kristal strukture het.
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Zhang, Xuefei. "Synthesis and Characterization of Zr1-xSixN Thin Film Materials." Fogler Library, University of Maine, 2007. http://www.library.umaine.edu/theses/pdf/ZhangX2007.pdf.

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Milne, Stuart Brian. "Thin-film silicon based MEMS actuators and materials." Thesis, University of Cambridge, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609898.

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Books on the topic "Thin materials"

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Yue, Kuo, ed. Thin film transistors: Materials and processes. Boston: Kluwer Academic Publishers, 2004.

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The materials science of thin films. Boston: Academic Press, 1992.

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Materials science in microelectronics. Croton-on-Hudson, N.Y: GiRo Press, 1995.

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Materials science in microelectronics. 2nd ed. Amsterdam: Elsevier, 2005.

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Machlin, E. S. Materials science in microelectronics. 2nd ed. Amsterdam: Elsevier, 2006.

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W, Göpel, and Ziegler Ch, eds. Nanostructures based on molecular materials. Weinheim: VCH, 1992.

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International, Conference on Wear of Materials (14th 2003 Washington D. C. ). Wear of materials. Amsterdam: Elsevier, 2003.

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Donglu, Shi, ed. Functional thin films and functional materials: New concepts and technologies. Berlin: Springer, 2003.

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Materials science of thin films: Deposition and structure. 2nd ed. San Diego, CA: Academic Press, 2002.

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Thin film growth: Physics, materials science and applications. Oxford: Woodhead Pub Ltd, 2011.

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Book chapters on the topic "Thin materials"

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Lakhtakia, Akhlesh, and Joseph B. Geddes. "Thin-Film Metamaterials Called Sculptured Thin Films." In Engineering Materials, 59–71. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-12070-1_3.

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Kasirga, T. Serkan. "Atomically Thin Materials." In Thermal Conductivity Measurements in Atomically Thin Materials and Devices, 1–10. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5348-6_1.

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Holowka, Eric P., and Sujata K. Bhatia. "Thin-Film Materials." In Drug Delivery, 63–116. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4939-1998-7_3.

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Shivashankar, S. A., J. J. Cuomo, J. E. Yehoda, and S. J. Whitehair. "Diamond Thin Films." In New Materials, 195–214. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-662-08970-5_9.

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Wang, Xizu, Ady Suwardi, Qiang Zhu, and Jianwei Xu. "Thin-Film Thermoelectrics." In Materials for Devices, 169–98. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003141358-7.

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Mwema, Fredrick Madaraka, Tien-Chien Jen, and Lin Zhu. "Thin Film Materials for Energy Applications." In Thin Film Coatings, 195–220. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003202615-10.

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Dauscher, Anne, and Bertrand Lenoir. "Thermoelectric Materials." In Pulsed Laser Deposition of Thin Films, 461–85. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2006. http://dx.doi.org/10.1002/9780470052129.ch19.

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Horng, Ray-Hua. "Thin-GaN LED Materials." In Handbook of Advanced Lighting Technology, 149–79. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-00176-0_13.

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Horng, Ray-Hua. "Thin-GaN LED Materials." In Handbook of Advanced Lighting Technology, 1–25. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-00295-8_13-1.

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Shen, Y. L. "Thin Continuous Films." In Constrained Deformation of Materials, 35–76. Boston, MA: Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-6312-3_3.

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Conference papers on the topic "Thin materials"

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Perry, Joseph, Sundaravel Ananthavel, Kevin Cammack, Stephen M. Kuebler, Seth R. Marder, Mariacristina Rumi, and Brian H. Cumpston. "Materials for two-photon 3D lithography." In Organic Thin Films. Washington, D.C.: OSA, 1999. http://dx.doi.org/10.1364/otf.1999.sub1.

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Herman, Warren N., and L. Michael Hayden. "Maker fringes revisited: second-harmonic generation from birefringent or absorbing materials." In Organic Thin Films. Washington, D.C.: OSA, 2002. http://dx.doi.org/10.1364/otf.2001.otud5.

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Ostroverkhov, Victor, Kenneth D. Singer, and Rolfe G. Petschek. "Second-harmonic generation in nonpolar chiral materials: relationship between molecular and macroscopic properties." In Organic Thin Films. Washington, D.C.: OSA, 2002. http://dx.doi.org/10.1364/otf.2001.owa2.

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Jayaraj, M. K. "Preface: Optoelectronic Materials and Thin Films." In OPTOELECTRONIC MATERIALS AND THIN FILMS: OMTAT 2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4861967.

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Cabrini, Stefano, Carlos Pina-Hernandez, Alexander Koshelev, Keiko Munechika, Michela Sainato, and Scott D. Dhuey. "High-refractive index materials for fabrication of photonic nanostructures (Conference Presentation)." In Nanostructured Thin Films XI, edited by Tom G. Mackay and Akhlesh Lakhtakia. SPIE, 2018. http://dx.doi.org/10.1117/12.2322890.

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Flores, F., R. Saiz-Pardo, and R. Rincon. "Interfaces in crystalline materials." In Thin Film Physics and Applications: Second International Conference, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1994. http://dx.doi.org/10.1117/12.190787.

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Dalton, Larry R., and Bruce H. Robinson. "Comparison of simple theory and experiment on the electro-optic coefficient of high dipole moment materials." In Organic Thin Films. Washington, D.C.: OSA, 1999. http://dx.doi.org/10.1364/otf.1999.fa1.

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Gillet, P. A., J. L. Fourquet, and Odile Bohnke. "New electrochromic thin-film materials." In Optical Materials Technology for Energy Efficiency and Solar Energy, edited by Anne Hugot-Le Goff, Claes-Goeran Granqvist, and Carl M. Lampert. SPIE, 1992. http://dx.doi.org/10.1117/12.130535.

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Yi, Yong, Han-Don Sun, Hui-Bie F. Xu, Guang Huang, and Xinjian Yi. "Multiphoton upconversion thin film materials." In Optoelectronics and High-Power Lasers & Applications, edited by Seppo Honkanen and Shibin Jiang. SPIE, 1998. http://dx.doi.org/10.1117/12.305398.

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de Abajo, F. Javier Garcia. "Plasmonics with atomically thin materials." In 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE, 2017. http://dx.doi.org/10.1109/cleoe-eqec.2017.8087632.

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Reports on the topic "Thin materials"

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Belzer, Barbara J., and David L. Blackburn. Thin film reference materials development. Gaithersburg, MD: National Institute of Standards and Technology, 1998. http://dx.doi.org/10.6028/nist.sp.400-100.

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Ghamaty, Saeid. Ultra Thin Quantum Well Materials. Office of Scientific and Technical Information (OSTI), August 2012. http://dx.doi.org/10.2172/1047577.

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Schwartzberg, Adam. New thin materials for electronics. Office of Scientific and Technical Information (OSTI), February 2012. http://dx.doi.org/10.2172/1039011.

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Chittenden, David H. Thin Film Composite Materials, Phase 2. Fort Belvoir, VA: Defense Technical Information Center, January 1987. http://dx.doi.org/10.21236/ada222882.

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Potter, Jr, and Barrett G. Optoelectronic Nanocomposite Materials for Thin Film Photovoltaics. Fort Belvoir, VA: Defense Technical Information Center, June 2012. http://dx.doi.org/10.21236/ada562250.

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Baron, B. N., R. W. Birkmire, J. E. Phillips, W. N. Shafarman, S. S. Hegedus, and B. E. McCandless. Fundamentals of polycrystalline thin film materials and devices. Office of Scientific and Technical Information (OSTI), January 1991. http://dx.doi.org/10.2172/6343732.

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Spears, R., R. Parsons, and P. Tretina. Thin film materials research for low-cost solar collectors. Office of Scientific and Technical Information (OSTI), November 1985. http://dx.doi.org/10.2172/5122748.

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Taylor, P. C., D. Chen, and S. L. Chen. Electronic processes in thin-film PV materials. Final report. Office of Scientific and Technical Information (OSTI), July 1998. http://dx.doi.org/10.2172/656705.

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Qiao, Yu. Understanding Size Effect in Cleavage Cracking in Thin Materials. Office of Scientific and Technical Information (OSTI), February 2013. http://dx.doi.org/10.2172/1063785.

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Weaver, John H. High Temperature Superconducting Materials: Thin Films, Surfaces, and Interfaces. Fort Belvoir, VA: Defense Technical Information Center, June 1991. http://dx.doi.org/10.21236/ada237359.

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