Academic literature on the topic 'Thin materials'
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Journal articles on the topic "Thin materials"
Horiuchi, Noriaki. "Atomically thin materials." Nature Photonics 12, no. 11 (October 26, 2018): 641. http://dx.doi.org/10.1038/s41566-018-0294-1.
Full textLara-Padilla, E., Maximino Avendano-Alejo, and L. Castaneda. "Transparent Conducting Oxides: Selected Materials for Thin Film Solar Cells." International Journal of Science and Research (IJSR) 11, no. 7 (July 5, 2022): 372–80. http://dx.doi.org/10.21275/sr22628033513.
Full textIshii, Hitoshi, Yohei Taguchi, Kazuo Ishii, and Hirofumi Akagi. "OS11W0239 Ultrasonic bending fatigue testing method for thin sheet materials." Abstracts of ATEM : International Conference on Advanced Technology in Experimental Mechanics : Asian Conference on Experimental Mechanics 2003.2 (2003): _OS11W0239. http://dx.doi.org/10.1299/jsmeatem.2003.2._os11w0239.
Full textWellen, M. "8.1 Thin-layer Materials." Materials Science Forum 366-368 (March 2001): 549–59. http://dx.doi.org/10.4028/www.scientific.net/msf.366-368.549.
Full textTsebrenko, M. V., N. M. Rezanova, and T. I. Sizevich. "Thin-fibre filtering materials." Fibre Chemistry 24, no. 1 (January 1992): 4–7. http://dx.doi.org/10.1007/bf00557167.
Full textDonges, Axel. "Measuring Extra-thin Materials." Optik & Photonik 9, no. 2 (May 2014): 52–54. http://dx.doi.org/10.1002/opph.201400043.
Full textTang, Wen, Tao Ruan Wan, and Donjing Huang. "Interactive thin elastic materials." Computer Animation and Virtual Worlds 27, no. 2 (June 5, 2015): 141–50. http://dx.doi.org/10.1002/cav.1666.
Full textNoudem, Jacques G. "Superconducting materials by design: Bulk with artificial thin walls as cryo-magnets." Mechanik, no. 2 (February 2015): 124/13–124/23. http://dx.doi.org/10.17814/mechanik.2015.2.73.
Full textLavine, Marc S. "A family of thin materials." Science 372, no. 6547 (June 10, 2021): 1162.10–1164. http://dx.doi.org/10.1126/science.372.6547.1162-j.
Full textGarcía de Abajo, F. Javier, and Alejandro Manjavacas. "Plasmonics in atomically thin materials." Faraday Discussions 178 (2015): 87–107. http://dx.doi.org/10.1039/c4fd00216d.
Full textDissertations / Theses on the topic "Thin materials"
Hu, Jingping. "Electronic Thin Film Materials." Thesis, University of Oxford, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.491618.
Full textMurphy, Craig E. "Pyroelectric thin film composite materials." Thesis, University of Oxford, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.260162.
Full textNeeves, Matthew Kenneth. "Thin film electrochromic materials and devices." Thesis, University of the West of Scotland, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627902.
Full textPearce, Alexander James. "Electromechanical properties of atomically thin materials." Thesis, University of Exeter, 2014. http://hdl.handle.net/10871/15294.
Full textKillian, Tyler Norton Rao S. M. "Numerical modeling of very thin dielectric materials." Auburn, Ala, 2008. http://repo.lib.auburn.edu/EtdRoot/2008/SUMMER/Electrical_and_Computer_Engineering/Thesis/Killian_Tyler_16.pdf.
Full textAlexiou, I. "Hole transport materials for organic thin films." Thesis, University of Cambridge, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.595437.
Full textBaugher, Britton William Herbert. "Electronic transport in atomically thin layered materials." Thesis, Massachusetts Institute of Technology, 2014. http://hdl.handle.net/1721.1/91393.
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Cataloged from PDF version of thesis.
Includes bibliographical references (pages 101-110).
Electronic transport in atomically thin layered materials has been a burgeoning field of study since the discovery of isolated single layer graphene in 2004. Graphene, a semi-metal, has a unique gapless Dirac-like band structure at low electronic energies, giving rise to novel physical phenomena and applications based on them. Graphene is also light, strong, transparent, highly conductive, and flexible, making it a promising candidate for next-generation electronics. Graphene's success has led to a rapid expansion of the world of 2D electronics, as researchers search for corollary materials that will also support stable, atomically thin, crystalline structures. The family of transition metal diclialcogenides represent some of the most exciting advances in that effort. Crucially, transition metal dichalcogenides add semiconducting elements to the world of 2D materials, enabling digital electronics and optoelectronics. Moreover, the single layer variants of these materials can posses a direct band gap, which greatly enhances their optical properties. This thesis is comprised of work performed on graphene and the dichalcogenides MoS 2 and WSe2. Initially, we expand on the family of exciting graphene devices with new work in the fabrication and characterization of suspended graphene nanoelectromnechanical resonators. Here we will demonstrate novel suspension techniques for graphene devices, the ion beam etching of nanoscale patterns into suspended graphene systems, and characterization studies of high frequency graphene nanoelectromechanical resonators that approach the GHz regime. We will then describe pioneering work on the characterization of atomically thin transition metal dichalcogenides and the development of electronics and optoelectronics based on those materials. We will describe the intrinsic electronic transport properties of high quality monolayer and bilayer MoS 2 , performing Hall measurements and demonstrating the temperature dependence of the material's resistivity, mobility, and contact resistance. And we will present data on optoelectronic devices based on electrically tunable p-n diodes in monolayer WSe2 , demonstrating a photodiode, solar cell, and light emitting diode.
by Britton William Herbert Baugher.
Ph. D.
Kobese, Pakamisa. "Preparation and characterization of metal titanate materials." Thesis, Stellenbosch : Stellenbosch University, 2002. http://hdl.handle.net/10019.1/53016.
Full textENGLISH ABSTRACT: Thin films and powders of Ni.Tiï), and CoxTi03 (where x = 0.005 - 0.9) with different stiochiometric ratios were prepared using sol gel techniques. These metal oxides were prepared by spin coating on silicon and titanium substrates followed, by annealing at 400°C and 800°C respectively under a temperature program. A range of films with MxTiOy (where x = 0.005 - 0.9) were prepared and then characterized by optical methods such as Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and Rutherford Backscattering Spectroscopy (RBS). X-ray powder diffraction was also used to determine the structural properties of these metal oxides. XRD pattern peaks showed that the powder forms of these metal oxides were well crystallized. Thin films could be amorphous because strong peaks were not present. For nickel titanates preparation, the best trend is at the low concentration of Ni that is 0.3:1 Ni:Ti. It is pure with no impurities of NiO and Ti02. High concentration of Co ranging from 0.7-1:1 Co:Ti forms a C02Ti04 structure with cubic phase. The best route for the CoTi03 preparation is at the low cobalt concentration that is 0.5:1 Co:Ti. Scanning Electron Microscopy (SEM) shows that a film deposited on silicon or a titanium substrate is smooth, uniform and crack-free. It also shows that a cobalt titanate film deposited on a Si substrate is rough, with cracks, whereas on the Ti substrate, it is smooth, uniform and crack-free. AFM studies show that as the concentration of Ni:Ti is reduced and the roughness of the thin film is increased. SEM, FTIR, XRD and RBS suggest that the 0.3:1 and 0.5:1Ni:Ti films with 10nm and 11nm thickness, respectively, iii Stellenbosch University http://scholar.sun.ac.za iv have the same structure. RBS suggests that the 1:1 and 0.5:1 Co:Ti have C0I.39Ti02.29and CoTi04.2 structures with 13nm and 16nm respectively. XRD reveals that NiTi03 and CoTi03 have rhombohedral crystal structure.
AFRIKAANSE OPSOMMING: Dunlagies en poeiers van NixTi03 en CoxTi03 (waar x = 0.005 - 0.9) met verskillende stoigiometriese verhoudings was voorberei deur gebruik te maak van sol gel tegnieke. Hierdie metaaloksiedes was voorberei deur gebruik te maak van "spin coating" op substrate van silikon en titaan gevolg deur konstante verhitting by 'n 400°C en 800°C temperatuur program onderskeidelik. 'n Reeks van lagies met MxTiOy (waar x = 0.005 - 0.9) was voorberei en gekarakteriseer met optiese metodes soos Skandeer Elektron Mikroskopie (SEM), Atoom Interaksie Mikroskopie (AFM) en "Rutherford Backscattering Spectroscopy (RBS)." X-straal Poeier Diffraksie was ook gebruik om die strukturele eienskappe van hierdie metaaloksiedes te bepaal. XRD patroon pieke wys dat die poeier vorms van hierdie metaaloksiedes goed gekristalliseer was. Dunlagies mag ook amorf wees aangesien sterk pieke nie teenwoordig was nie. Vir nikkel titaniete is hierdie die algemene roete vir die NiTi03 voorbereiding. Die beste tendens is by lae konsentrasies van Ni naamlik 0.3:1 Ni:Ti. Dit is suiwer en het geen onsuiwerhede van NiO en Ti02 nie. Hoë konsentrasies van Co vanaf 0.7 - 1:1 Co:Ti vorm 'n Co2Ti04 struktuur met 'n kubiese fase. Die beste roete vir die CoTi03 voorbereiding is by lae kobalt konsentrasie naamlik 0.5 -1:1 Co:Ti. Skandeer Elektron Mikroskopie (SEM) wys dat 'n NiTi03 laag gedeponeer op silikon en titaan substrate gelyk was, eenvorming en sonder krake. Dit wys ook dat die kobalt titaan laag oppervlakte gedeponeer op 'n silikon substraat grof was en het krake getoon. Vir die Ti substraat het dit gewys dat die oppervlaktes gladwas, univormig en sonder krake. AFM studies wys dat as die konsentrasie Ni:Ti verminder word die grofheid van die dunlaag verminder. SEM, FTIR, XRD en RBS dui aan dat die 0.3:1 en 0.5:1 Ni:Ti dunlaag dieselfde struktuur het met 10nm en 11nm dikte onderskeidelik. RBS dui aan dat die 1:1 en 0.5:1 Co:Ti het C01.39Ti02.29en CoTi04.2 strukture onderskeidelik met 13nm en 16nm diktes. XRD toon aan dat NiTi03 en CoTi03 rhombohedrale kristal strukture het.
Zhang, Xuefei. "Synthesis and Characterization of Zr1-xSixN Thin Film Materials." Fogler Library, University of Maine, 2007. http://www.library.umaine.edu/theses/pdf/ZhangX2007.pdf.
Full textMilne, Stuart Brian. "Thin-film silicon based MEMS actuators and materials." Thesis, University of Cambridge, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609898.
Full textBooks on the topic "Thin materials"
Yue, Kuo, ed. Thin film transistors: Materials and processes. Boston: Kluwer Academic Publishers, 2004.
Find full textThe materials science of thin films. Boston: Academic Press, 1992.
Find full textMaterials science in microelectronics. Croton-on-Hudson, N.Y: GiRo Press, 1995.
Find full textMaterials science in microelectronics. 2nd ed. Amsterdam: Elsevier, 2005.
Find full textMachlin, E. S. Materials science in microelectronics. 2nd ed. Amsterdam: Elsevier, 2006.
Find full textW, Göpel, and Ziegler Ch, eds. Nanostructures based on molecular materials. Weinheim: VCH, 1992.
Find full textInternational, Conference on Wear of Materials (14th 2003 Washington D. C. ). Wear of materials. Amsterdam: Elsevier, 2003.
Find full textDonglu, Shi, ed. Functional thin films and functional materials: New concepts and technologies. Berlin: Springer, 2003.
Find full textMaterials science of thin films: Deposition and structure. 2nd ed. San Diego, CA: Academic Press, 2002.
Find full textThin film growth: Physics, materials science and applications. Oxford: Woodhead Pub Ltd, 2011.
Find full textBook chapters on the topic "Thin materials"
Lakhtakia, Akhlesh, and Joseph B. Geddes. "Thin-Film Metamaterials Called Sculptured Thin Films." In Engineering Materials, 59–71. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-12070-1_3.
Full textKasirga, T. Serkan. "Atomically Thin Materials." In Thermal Conductivity Measurements in Atomically Thin Materials and Devices, 1–10. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5348-6_1.
Full textHolowka, Eric P., and Sujata K. Bhatia. "Thin-Film Materials." In Drug Delivery, 63–116. New York, NY: Springer New York, 2014. http://dx.doi.org/10.1007/978-1-4939-1998-7_3.
Full textShivashankar, S. A., J. J. Cuomo, J. E. Yehoda, and S. J. Whitehair. "Diamond Thin Films." In New Materials, 195–214. Berlin, Heidelberg: Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-662-08970-5_9.
Full textWang, Xizu, Ady Suwardi, Qiang Zhu, and Jianwei Xu. "Thin-Film Thermoelectrics." In Materials for Devices, 169–98. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003141358-7.
Full textMwema, Fredrick Madaraka, Tien-Chien Jen, and Lin Zhu. "Thin Film Materials for Energy Applications." In Thin Film Coatings, 195–220. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003202615-10.
Full textDauscher, Anne, and Bertrand Lenoir. "Thermoelectric Materials." In Pulsed Laser Deposition of Thin Films, 461–85. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2006. http://dx.doi.org/10.1002/9780470052129.ch19.
Full textHorng, Ray-Hua. "Thin-GaN LED Materials." In Handbook of Advanced Lighting Technology, 149–79. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-00176-0_13.
Full textHorng, Ray-Hua. "Thin-GaN LED Materials." In Handbook of Advanced Lighting Technology, 1–25. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-00295-8_13-1.
Full textShen, Y. L. "Thin Continuous Films." In Constrained Deformation of Materials, 35–76. Boston, MA: Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-6312-3_3.
Full textConference papers on the topic "Thin materials"
Perry, Joseph, Sundaravel Ananthavel, Kevin Cammack, Stephen M. Kuebler, Seth R. Marder, Mariacristina Rumi, and Brian H. Cumpston. "Materials for two-photon 3D lithography." In Organic Thin Films. Washington, D.C.: OSA, 1999. http://dx.doi.org/10.1364/otf.1999.sub1.
Full textHerman, Warren N., and L. Michael Hayden. "Maker fringes revisited: second-harmonic generation from birefringent or absorbing materials." In Organic Thin Films. Washington, D.C.: OSA, 2002. http://dx.doi.org/10.1364/otf.2001.otud5.
Full textOstroverkhov, Victor, Kenneth D. Singer, and Rolfe G. Petschek. "Second-harmonic generation in nonpolar chiral materials: relationship between molecular and macroscopic properties." In Organic Thin Films. Washington, D.C.: OSA, 2002. http://dx.doi.org/10.1364/otf.2001.owa2.
Full textJayaraj, M. K. "Preface: Optoelectronic Materials and Thin Films." In OPTOELECTRONIC MATERIALS AND THIN FILMS: OMTAT 2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4861967.
Full textCabrini, Stefano, Carlos Pina-Hernandez, Alexander Koshelev, Keiko Munechika, Michela Sainato, and Scott D. Dhuey. "High-refractive index materials for fabrication of photonic nanostructures (Conference Presentation)." In Nanostructured Thin Films XI, edited by Tom G. Mackay and Akhlesh Lakhtakia. SPIE, 2018. http://dx.doi.org/10.1117/12.2322890.
Full textFlores, F., R. Saiz-Pardo, and R. Rincon. "Interfaces in crystalline materials." In Thin Film Physics and Applications: Second International Conference, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1994. http://dx.doi.org/10.1117/12.190787.
Full textDalton, Larry R., and Bruce H. Robinson. "Comparison of simple theory and experiment on the electro-optic coefficient of high dipole moment materials." In Organic Thin Films. Washington, D.C.: OSA, 1999. http://dx.doi.org/10.1364/otf.1999.fa1.
Full textGillet, P. A., J. L. Fourquet, and Odile Bohnke. "New electrochromic thin-film materials." In Optical Materials Technology for Energy Efficiency and Solar Energy, edited by Anne Hugot-Le Goff, Claes-Goeran Granqvist, and Carl M. Lampert. SPIE, 1992. http://dx.doi.org/10.1117/12.130535.
Full textYi, Yong, Han-Don Sun, Hui-Bie F. Xu, Guang Huang, and Xinjian Yi. "Multiphoton upconversion thin film materials." In Optoelectronics and High-Power Lasers & Applications, edited by Seppo Honkanen and Shibin Jiang. SPIE, 1998. http://dx.doi.org/10.1117/12.305398.
Full textde Abajo, F. Javier Garcia. "Plasmonics with atomically thin materials." In 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE, 2017. http://dx.doi.org/10.1109/cleoe-eqec.2017.8087632.
Full textReports on the topic "Thin materials"
Belzer, Barbara J., and David L. Blackburn. Thin film reference materials development. Gaithersburg, MD: National Institute of Standards and Technology, 1998. http://dx.doi.org/10.6028/nist.sp.400-100.
Full textGhamaty, Saeid. Ultra Thin Quantum Well Materials. Office of Scientific and Technical Information (OSTI), August 2012. http://dx.doi.org/10.2172/1047577.
Full textSchwartzberg, Adam. New thin materials for electronics. Office of Scientific and Technical Information (OSTI), February 2012. http://dx.doi.org/10.2172/1039011.
Full textChittenden, David H. Thin Film Composite Materials, Phase 2. Fort Belvoir, VA: Defense Technical Information Center, January 1987. http://dx.doi.org/10.21236/ada222882.
Full textPotter, Jr, and Barrett G. Optoelectronic Nanocomposite Materials for Thin Film Photovoltaics. Fort Belvoir, VA: Defense Technical Information Center, June 2012. http://dx.doi.org/10.21236/ada562250.
Full textBaron, B. N., R. W. Birkmire, J. E. Phillips, W. N. Shafarman, S. S. Hegedus, and B. E. McCandless. Fundamentals of polycrystalline thin film materials and devices. Office of Scientific and Technical Information (OSTI), January 1991. http://dx.doi.org/10.2172/6343732.
Full textSpears, R., R. Parsons, and P. Tretina. Thin film materials research for low-cost solar collectors. Office of Scientific and Technical Information (OSTI), November 1985. http://dx.doi.org/10.2172/5122748.
Full textTaylor, P. C., D. Chen, and S. L. Chen. Electronic processes in thin-film PV materials. Final report. Office of Scientific and Technical Information (OSTI), July 1998. http://dx.doi.org/10.2172/656705.
Full textQiao, Yu. Understanding Size Effect in Cleavage Cracking in Thin Materials. Office of Scientific and Technical Information (OSTI), February 2013. http://dx.doi.org/10.2172/1063785.
Full textWeaver, John H. High Temperature Superconducting Materials: Thin Films, Surfaces, and Interfaces. Fort Belvoir, VA: Defense Technical Information Center, June 1991. http://dx.doi.org/10.21236/ada237359.
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