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Journal articles on the topic 'Thin films cobalt'

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Author: Grafiati

Published: 6 September 2023

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1

Jin, Chunming, Sudhakar Nori, Wei Wei, Ravi Aggarwal, Dhananjay Kumar, and Roger J. Narayan. "Pulsed Laser Deposition of Nanoporous Cobalt Thin Films." Journal of Nanoscience and Nanotechnology 8, no. 11 (November 1, 2008): 6043–47. http://dx.doi.org/10.1166/jnn.2008.483.

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Nanoporous cobalt thin films were deposited on anodized aluminum oxide (AAO) membranes at room temperature using pulsed laser deposition. Scanning electron microscopy demonstrated that the nanoporous cobalt thin films retained the monodisperse pore size and high porosity of the anodized aluminum oxide substrates. Temperature- and field-dependent magnetic data obtained between 10 K and 350 K showed large hysteresis behavior in these materials. The increase of coercivity values was larger for nanoporous cobalt thin films than for multilayered cobalt/alumina thin films. The average diameter of the cobalt nanograins in the nanoporous cobalt thin films was estimated to be ∼5 nm for blocking temperatures near room temperature. These results suggest that pulsed laser deposition may be used to fabricate nanoporous magnetic materials with unusual properties for biosensing, drug delivery, data storage, and other technological applications.

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2

Luo, Hongmei, Donghai Wang, Jibao He, and Yunfeng Lu. "Magnetic Cobalt Nanowire Thin Films." Journal of Physical Chemistry B 109, no. 5 (February 2005): 1919–22. http://dx.doi.org/10.1021/jp045554t.

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3

Koumoulos, Elias P., Vasiliki P. Tsikourkitoudi, Ioannis A. Kartsonakis, Vassileios E. Markakis, Nikolaos Papadopoulos, Evangelos Hristoforou, and Costas A. Charitidis. "Synthesis, structural and nanomechanical properties of cobalt based thin films." International Journal of Structural Integrity 6, no. 2 (April 13, 2015): 225–42. http://dx.doi.org/10.1108/ijsi-10-2013-0031.

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Purpose – The purpose of this paper is to produce cobalt (Co)-based thin films by metalorganic chemical vapor deposition (CVD) technique and then to evaluate structural and mechanical integrity. Design/methodology/approach – Co-based thin films were produced by metalorganic CVD technique. Boronizing, carburization and nitridation of the produced Co thin films were accomplished through a post-treatment stage of thermal diffusion into as-deposited Co thin films, in order to produce cobalt boride (Co2B), cobalt carbide and cobalt nitride thin films in the surface layer of Co. The surface topography and the crystal structure of the produced thin films were evaluated through scanning electron microscopy and X-ray diffraction, respectively. The mechanical integrity of the produced thin films was evaluated through nanoindentation technique. Findings – The obtained results indicate that Co2B thin film exhibits the highest nanomechanical properties (i.e. H and E), while Co thin film has enhanced plasticity. The cobalt oxide thin film exhibits higher resistance to wear in comparison to the cobalt thin film, a fact that is confirmed by the nanoscratch analysis showing lower coefficient of friction for the oxide. Originality/value – This work is original.

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4

Chansaengsri, Kasidid, Korakot Onlaor, Thutiyaporn Thiwawong, and Benchapol Tunhoo. "Supercapacitive Properties of Cobalt Oxide Thin Films Prepared by Electrostatic Spray Deposition Technique at Different Substrate Temperature." Key Engineering Materials 675-676 (January 2016): 261–64. http://dx.doi.org/10.4028/www.scientific.net/kem.675-676.261.

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In this work, cobalt oxide thin films were prepared by electrostatic spray deposition (ESD) technique. The influence of the substrate temperatures on properties of film was investigated. Phase transformation of cobalt oxide thin films due to the effect of different substrate temperature was also observed. Cyclic voltammetry was used to measure the performance of cobalt oxide supercapacitor. At higher substrate temperature, the cobalt oxide thin films exhibit the high specific capacitance due to the effect of phase transformation in cobalt oxide films.

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5

Soonmin, Ho. "Properties Study of SILAR Deposited Cobalt Selenide Thin Films." International Journal of Research and Review 8, no. 12 (December 9, 2021): 119–24. http://dx.doi.org/10.52403/ijrr.20211216.

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Thin films are attractive materials to be used in laser, solar cells, sensors, phosphors, light emitting diodes, IR windows and flat panel displays. Several deposition methods have been employed to deposit thin films as reported by many researchers. In this report, the cobalt selenide thin films have been deposited onto microscope glass slide via successive ionic layer adsorption and reaction method. This deposition method is a simple method owing to the inexpensive technique and can produce films at a low bath temperature. All the samples were investigated by using XRD, FESEM and UV-visible spectrophotometer. The XRD pattern confirmed that cubic phase cobalt selenide thin films. The FESEM image exhibited that the obtained sample is dense, uniform, and smooth surface. Keywords: XRD, FESEM, Thin films, Cobalt selenide, SILAR technique, Semiconductor, Band gap.

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6

Liu, Fangyang, Bo Wang, Yanqing Lai, Jie Li, Zhian Zhang, and Yexiang Liu. "Electrodeposition of Cobalt Selenide Thin Films." Journal of The Electrochemical Society 157, no. 10 (2010): D523. http://dx.doi.org/10.1149/1.3468675.

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7

Hirono, S., T. Hayashi, J. J. Delaunay, S. Umemura, and M. Tomita. "Cobalt-Carbon Nanogranular Magnetic Thin Films." Journal of the Magnetics Society of Japan 22, S_1_ISFA_97 (1998): S1_135–137. http://dx.doi.org/10.3379/jmsjmag.22.s1_135.

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8

Wei, G. "Thin films of lithium cobalt oxide." Solid State Ionics 58, no. 1-2 (November 1992): 115–22. http://dx.doi.org/10.1016/0167-2738(92)90018-k.

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9

Martens, J. W. D., and W. L. Peeters. "Anisotropy in Cobalt-Ferrite thin films." Journal of Magnetism and Magnetic Materials 61, no. 1-2 (September 1986): 21–23. http://dx.doi.org/10.1016/0304-8853(86)90062-4.

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10

Labrune, M., J. Miltat, J. P. Jakubovics, A. M. Thompson, and J. N. Chapman. "Wall structure in cobalt thin films." Journal of Magnetism and Magnetic Materials 104-107 (February 1992): 343–44. http://dx.doi.org/10.1016/0304-8853(92)90826-a.

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11

Chansaengsri, Kasidid, Korakot Onlaor, Thutiyaporn Thiwawong, and Benchapol Tunhoo. "Effect of Substrate Temperature of on Properties of Cobalt Oxide Thin Films Prepared by Electrostatic Spray Deposition Technique." Applied Mechanics and Materials 848 (July 2016): 103–6. http://dx.doi.org/10.4028/www.scientific.net/amm.848.103.

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In this work, the influence of the substrate temperature on properties of cobalt oxide thin films has been reported. Cobalt oxide thin films were prepared by electrostatic spray deposition technique on glass substrate at different temperature of the substrate. The properties of cobalt oxide films were characterized by X-Ray diffraction (XRD), scanning electron microscope, Raman spectroscopy, UV-visible spectrophotometer, respectively. In additional, the crystalline structural parameters can be performed from XRD data. Phase transformation of cobalt oxide films due to different substrate temperature was observed. Moreover, the optical properties of films were depended on the quantity of phase transition in cobalt oxide film.

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12

Kerli, S. "Boron-doped cobalt oxide thin films and its electrochemical properties." Modern Physics Letters B 30, no. 27 (October 10, 2016): 1650343. http://dx.doi.org/10.1142/s0217984916503437.

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The cobalt oxide and boron-doped cobalt oxide thin films were produced by spray deposition method. All films were obtained onto glass and fluorine-doped tin oxide (FTO) substrates at 400[Formula: see text]C and annealed at 550[Formula: see text]C. We present detailed analysis of the morphological and optical properties of films. XRD results show that boron doping disrupts the structure of the films. Morphologies of the films were investigated by using a scanning electron microscopy (SEM). Optical measurements indicate that the band gap energies of the films change with boron concentrations. The electrochemical supercapacitor performance test has been studied in aqueous 6 M KOH electrolyte and with scan rate of 5 mV/s. Measurements show that the largest capacitance is obtained for 3% boron-doped cobalt oxide film.

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13

JIAO, DONGMAO, JIANGONG LI, XIA NI, and XUDONG ZHANG. "MICROSTRUCTURES AND MAGNETIC PROPERTIES OF COBALT THIN FILMS." Modern Physics Letters B 22, no. 31 (December 20, 2008): 3079–86. http://dx.doi.org/10.1142/s021798490801759x.

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Cobalt thin films deposited by radio frequency sputtering were investigated. Microstructures of the Co films were analyzed by XRD and TEM. The results show that films microstructure varies with the variation of the sputter gas pressure P Ar . Magnetic properties measured by VSM show that all the films possess relatively high saturation magnetization 4πMs, and strong in-plane uniaxial magnetic anisotropy field Hk. Co films deposited below 0.3 Pa show soft magnetic properties and its microwave permeability was measured by vector network analyzer in the 0.1–5 GHz range.

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14

Gonçalves, Sofia, Vivian Andrade, Célia T. Sousa, João P. Araújo, João H. Belo, and Arlete Apolinário. "Tunable Iron–Cobalt Thin Films Grown by Electrodeposition." Magnetochemistry 9, no. 7 (June 21, 2023): 161. http://dx.doi.org/10.3390/magnetochemistry9070161.

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Iron–cobalt (FeCo) alloys are highly desirable for their exceptional and adjustable physicochemical properties, particularly in the form of thin films. This study focuses on the growth of iron–cobalt (FeCo) alloy thin films using potentiostatic electrodeposition. The effects of applied voltage and FeCo stoichiometry on the morphology, structure, and magnetic properties of the films are investigated. The results indicate that the electrodeposition potential does not affect the overall stoichiometry or the structural and magnetic properties. However, it does impact film thickness and grain sizes. Higher applied potentials lead to thicker films with faster growth rates, as well as smoother and more homogeneous films with smaller grains. Films with different Fe:Co ratios (Fe90Co10, Fe50Co50, and Fe10Co90) are obtained, and their compositions have a direct impact on morphology, with the amount of Fe influencing film thickness, growth rates, and grain sizes. Increasing Fe content (50, 90%) leads to thicker films and smaller grains. Films with low Fe content (10%) exhibit a face-centered cubic (fcc) structural phase instead of the typical body-centered cubic (bcc) structure. All FeCo alloys display soft magnetic properties with characteristic coercivities, and the low Fe (10%) sample with the fcc structure exhibits the highest coercivity among all the samples. The nucleation and growth mechanisms are investigated using electrodeposition curves and the Scharifker and Hills model. Increasing the applied potential leads to thicker films and higher growth rates, with the nucleation mechanism identified as instantaneous nucleation in the diffusion-controlled regime.

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15

Jia, X. L., Y. Wang, R. S. Xin, Quan Li Jia, and Hai Jun Zhang. "Preparation of Rare-Earth Element Doped Titanium Oxide Thin Films and Photocatalysis Properties." Key Engineering Materials 336-338 (April 2007): 1946–48. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.1946.

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Rare-earth doped porous nanocrystalline TiO2 films were prepared via sol-gel method. The effect of preparation conditions on the properties of the resulting thin films, such as structure, surface topography and photocatalysis properties was analyzed. It indicated that appropriate doping of rare-earth element improves the photocatalysis ability of the thin titanium oxide films. The thin titanium oxide films have good photocatalysis properties in visible light region because of the red shift of energy level. It also revealed that uni-doped of cobalt is better than that of cobalt and lanthanum, while co-doping of cerium, cobalt and lanthanum may cause the best photocatalysis properties.

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16

Chansaengsri, Kasidid, Korakot Onlaor, Thutiyaporn Thiwawong, and Benchapol Tunhoo. "Effect of Annealing Temperature on Structural and Optical Properties of Cobalt Oxide Thin Films Prepared by Electrostatic Spray Deposition Technique." Key Engineering Materials 675-676 (January 2016): 229–32. http://dx.doi.org/10.4028/www.scientific.net/kem.675-676.229.

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In this work, cobalt oxide thin films were prepared by electrostatic spray deposition (ESD) technique on glass substrate. The influence of the annealing temperature on properties of cobalt oxide film was investigated. The structural, optical and morphology of cobalt oxide thin films were characterized by X-ray diffraction (XRD), Raman spectroscopy, UV-Visible spectrophotometer, scanning electron microscope, respectively. The crystalline parameters such as crystalline size of films can be obtained from XRD spectra. Phase transformation due to the different annealing temperature in cobalt oxide film has been observed. Moreover, at the higher annealing temperature, the optical band gap in cobalt oxide films were shifted to lower value due to the change in crystalline size and the defect sites in films.

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17

Prabhakaran, Kuniyil, and Toshio Ogino. "Oxidation behavior of cobalt silicide and cobalt germanide thin films." Applied Surface Science 121-122 (November 1997): 213–17. http://dx.doi.org/10.1016/s0169-4332(97)00291-2.

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18

Gulino, Antonino, and Ignazio Fragalà. "Cobalt hexafluoroacetylacetonate polyether adducts for thin films of cobalt oxides." Inorganica Chimica Acta 358, no. 15 (December 2005): 4466–72. http://dx.doi.org/10.1016/j.ica.2005.07.031.

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19

Seo, Min, Min Kyung Cho, Un Hyeon Kang, Sin Young Jeon, Sang-Ho Lim, and Seung Hee Han. "Low-Resistivity Cobalt and Ruthenium Ultra-Thin Film Deposition Using Bipolar HiPIMS Technique." ECS Journal of Solid State Science and Technology 11, no. 3 (March 1, 2022): 033006. http://dx.doi.org/10.1149/2162-8777/ac5805.

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Owing to the rapid growth of very large-scale integration technology at nanometer scales, cobalt and ruthenium interconnects are being used to solve the high-resistivity copper problem. However, with such interconnects, carbon contamination can occur during chemical vapor deposition and atomic layer deposition. Bipolar (BP) high-power impulse magnetron sputtering (HiPIMS) with a high ionization rate is an excellent vacuum process for depositing low-resistivity thin films. In this study, low-resistivity cobalt, ruthenium, and copper thin films were deposited using BP-HiPIMS, HiPIMS, and direct-current magnetron sputtering (DCMS). The resistivities of the cobalt, ruthenium, and copper thin films (<10 nm) deposited via BP-HiPIMS were 91.5, 75, and 35%, respectively, lower than the resistivities of the same film materials deposited using direct-current MS. To solve the low pass-through flux of cobalt, the target temperature was raised to the Curie temperature (approximately 1100 °C) using a thermal insulation backplate (Ti-6Al-4V), resulting in a resistivity reduction of about 73%. The study provides a novel method for the vacuum deposition of cobalt and ruthenium thin films.

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20

Okoli, Nonso Livinus, Laz Nnadozie Ezenwaka, Ngozi Agatha Okereke, Ifeyinwa Amaka Ezenwa, and Nwode Augustine Nwori. "Investigation of Optical, Structural, Morphological and Electrical Properties of Electrodeposited Cobalt Doped Copper Selenide (Cu_(1-x) Co_x Se) Thin Films." Trends in Sciences 19, no. 16 (August 15, 2022): 5686. http://dx.doi.org/10.48048/tis.2022.5686.

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Undoped and cobalt doped copper selenide thin films have been successfully prepared unto fluorine tin oxide (FTO) substrates by electrodeposition method using copper acetate, cobalt nitrate and selenium (IV) oxide as precursors for copper, cobalt and selenium ions respectively. Deposited thin films were subjected to optical, structural, morphological, compositional and electrical analysis using spectrophotometer, x-ray diffractometer, scanning electron microscope (SEM), energy dispersive x-ray spectroscopy (EDS) and 4-point probe. Optical results observed between the wavelength range of 300 nm and 1,000 nm showed that the films have good optical responses. Absorbance values ranged between 0.1 and 0.81 while transmittance lies between 15.59 and 78.68 %. Energy band gap of the films was found to vary from 2.10 to 2.28 eV. These results showed that cobalt as a dopant could be used to modify properties of copper selenide thin films. Structural analysis showed that the deposited films are polycrystalline in nature with hexagonal structural phase. Crystallite sizes of range 27.56 to 34.27 nm were obtained while dislocation density lied between and . Microstrain ranged between and . Micrograph images showed flake-like particles that increased in size as percentage of cobalt increased. Energy dispersive spectroscope (EDS) results confirmed the incorporation of cobalt on the deposited copper selenide films. Electrical resistivity of the films increased from to while conductivity decreased from to as a result of variation in cobalt ion concentration. These properties of the deposited thin films positioned them for solar cell and optoelectronics device applications. HIGHLIGHTS Energy band gap of electrosynthesized cobalt doped copper selenide ranged from 2.10 to 2.28 eV Film thickness values ranged from 48.41 and 176.79 nm. Thickness values of the films were found to increase as concentration of cobalt increase Increase in dopant concentration resulted to shift in diffraction peaks towards larger angles Increase in crystallite size from 27.56 - 34.27 nm was observed as dopant concentration increases SEM images of the films revealed flake - like particles of different sizes GRAPHICAL ABSTRACT

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21

Goeller, Peter T., Boyan I. Boyanov, Dale E. Sayers, Robert J. Nemanich, Alline F. Myers, and Eric B. Steel. "Germanium segregation in the Co/SiGe/Si(001) thin film system." Journal of Materials Research 14, no. 11 (November 1999): 4372–84. http://dx.doi.org/10.1557/jmr.1999.0592.

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Cobalt disilicide contacts to silicon–germanium alloys were formed by direct deposition of pure cobalt metal onto silicon–germanium films on Si(001) substrates. Segregation of germanium was observed during the reaction of the cobalt with the silicon–germanium alloy. The nature of the Ge segregation was studied by transmission electron microscopy, energy dispersive spectroscopy, and x-ray diffraction. In the case of cobalt films deposited onto strained silicon–germanium films, the Ge segregation was discovered to be in the form of Ge-enriched Si1−xGex regions found at the surface of the film surrounding CoSi and CoSi2 grains. In the case of cobalt films deposited onto relaxed silicon–germanium films, the Ge segregation was dependent on formation of CoSi2. In samples annealed below 800 °C, where CoSi was the dominant silicide phase, the Ge segregation was similar in form to the strained Si1−xGex case. In samples annealed above 800 °C, where CoSi2 was the dominant silicide phase, the Ge segregation was also in the form of tetrahedron-shaped, Ge-enriched, silicon–germanium precipitates, which formed at the substrate/silicon– germanium film interface and grew into the Si substrate. A possible mechanism for the formation of these precipitates is presented based on vacancy generation during the silicidation reaction coupled with an increased driving force for Ge diffusion due to silicon depletion in the alloy layer.

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22

Matsuoka, Morito, Ken’ichi Ono, and Takashi Inukai. "Magnetic properties of cobalt nitride thin films." Applied Physics Letters 49, no. 15 (October 13, 1986): 977–79. http://dx.doi.org/10.1063/1.97501.

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23

Badera, Nitu, Bhavana Godbole, S. B. Srivastava, P. N. Vishwakarma, Deepti Jain, L. S. Sharath Chandra, and V. Ganesan. "Photoconductivity of Cobalt Doped CdS Thin Films." Physics Procedia 49 (2013): 190–98. http://dx.doi.org/10.1016/j.phpro.2013.10.026.

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24

Linder, Clara, Smita Gangaprasad Rao, Arnaud le Febvrier, Grzegorz Greczynski, Rune Sjövall, Sara Munktell, Per Eklund, and Emma M. Björk. "Cobalt thin films as water-recombination electrocatalysts." Surface and Coatings Technology 404 (December 2020): 126643. http://dx.doi.org/10.1016/j.surfcoat.2020.126643.

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25

Barrera, E. "Synthesis of cobalt–silicon oxide thin films." Solar Energy Materials and Solar Cells 76, no. 3 (March 31, 2003): 387–98. http://dx.doi.org/10.1016/s0927-0248(02)00290-8.

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26

Ansell, Michael A., Astrid C. Zeppenfeld, Kenichi Yoshimoto, Elizabeth B. Cogan, and Catherine J. Page. "Self-Assembled Cobalt−Diisocyanobenzene Multilayer Thin Films." Chemistry of Materials 8, no. 3 (January 1996): 591–94. http://dx.doi.org/10.1021/cm950346m.

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27

Chioncel, M. F., H. S. Nagaraja, F. Rossignol, and P. W. Haycock. "Domain structures of MOCVD cobalt thin films." Journal of Magnetism and Magnetic Materials 313, no. 1 (June 2007): 135–41. http://dx.doi.org/10.1016/j.jmmm.2006.12.028.

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28

Viret, M., I. Auneau, and J. M. D. Coey. "Anisotropic magnetotransport properties of cobalt thin films." Journal of Magnetism and Magnetic Materials 140-144 (February 1995): 683–84. http://dx.doi.org/10.1016/0304-8853(94)01564-3.

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29

Benitez, G., J. L. Carelli, J. M. Heras, and L. Viscido. "Interaction of Oxygen with Thin Cobalt Films†." Langmuir 12, no. 1 (January 1996): 57–60. http://dx.doi.org/10.1021/la940743w.

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30

Kelly, P. E., K. O'Grady, P. I. Mayo, and R. W. Chantrell. "Switching mechanisms in cobalt-phosphorus thin films." IEEE Transactions on Magnetics 25, no. 5 (1989): 3881–83. http://dx.doi.org/10.1109/20.42466.

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31

Banu, Nasrin, Surendra Singh, Saibal Basu, Anupam Roy, Hema C. P. Movva, V. Lauter, B. Satpati, and B. N. Dev. "High density nonmagnetic cobalt in thin films." Nanotechnology 29, no. 19 (March 15, 2018): 195703. http://dx.doi.org/10.1088/1361-6528/aab0e9.

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32

Prasad, J. J. B., and K. V. Reddy. "Self diffusion studies on cobalt thin films." Bulletin of Materials Science 7, no. 1 (March 1985): 15–20. http://dx.doi.org/10.1007/bf02744253.

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33

Szmaja, W., W. Kozłowski, J. Balcerski, P. J. Kowalczyk, J. Grobelny, and M. Cichomski. "Study of obliquely deposited thin cobalt films." Journal of Alloys and Compounds 506, no. 2 (September 2010): 526–29. http://dx.doi.org/10.1016/j.jallcom.2010.07.096.

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34

Fujioka, Yukari, Johannes Frantti, Christopher Rouleau, Alexander Puretzky, and Harry M. Meyer. "Vacancy filled nickel-cobalt-titanate thin films." physica status solidi (b) 254, no. 7 (March 20, 2017): 1600799. http://dx.doi.org/10.1002/pssb.201600799.

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35

Abza, Tizazu, Dereje Gelanu Dadi, Fekadu Gashaw Hone, Tesfaye Chebelew Meharu, Gebremeskel Tekle, Eyobe Belew Abebe, and Kalid Seid Ahmed. "Characterization of Cobalt Sulfide Thin Films Synthesized from Acidic Chemical Baths." Advances in Materials Science and Engineering 2020 (April 30, 2020): 1–9. http://dx.doi.org/10.1155/2020/2628706.

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Cobalt sulfide thin films were synthesized from acidic chemical baths by varying the deposition time. The powder X-ray diffraction studies indicated that there are hexagonal CoS, face-centered cubic Co3S4, and cubic Co9S8 phases of cobalt sulfide. The crystallite size of the hexagonal CoS phase decreased from 52.8 nm to 22.5 nm and that of the cubic Co9S8 phase increased from 11 nm to 60 nm as the deposition time increased from 2 hrs to 3.5 hrs. The scanning electron microscopic images revealed crack and pinhole free thin films with uniform and smooth background and few large polygonal grains on the surface. The band gap of the cobalt sulfide thin films decreased from 1.75 eV to 1.3 eV as the deposition time increased from 2 hrs to 3.5 hrs. The photoluminescence (PL) spectra of the films confirmed the emission of ultraviolet, violet, and blue lights. The intense PL emission of violet light at 384 nm had red shifted with increasing deposition time that could be resulted from the increase in the average crystallite size. The FTIR spectra of the films indicated the presence of OH, C-O-H, C-O, double sulfide, and Co-S groups. As the deposition time increased, the electrical resistivity of the cobalt sulfide thin films decreased due to the increase in both the crystallite size and the films’ thickness.

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36

Mohammed, Alaa J. "Effect of Cobalt Chloride Additive on the Optical Properties of (PEO/PVA) Composites Thin Films." International Journal of Psychosocial Rehabilitation 24, no. 4 (April 30, 2020): 6893–99. http://dx.doi.org/10.37200/ijpr/v24i4/pr2020503.

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37

Kaufmann, M., M. Mantler, and F. Weber. "Analysis of Thin Films and Multi-Layer Thin Films containing Light Elements by XRF." Advances in X-ray Analysis 39 (1995): 701–6. http://dx.doi.org/10.1154/s0376030800023144.

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Analysis of multi-layer thin films by XRF, using the fundamental parameter method, is a common and accurate method to determine thicknesses and chemical structure, as long as the films contain no hght elements. As an attempt to further extend the method, we present experimental results from single layer films made of carbon and silicon nitride with thicknesses ranging from 100 Å to 1000 Å, from single layer films of cobalt and oxygen matrices with varying oxygen concentration, and from complex multi-layer structures made of a combination of palladium, copper and carbon. The experimental data show a significant deviation from the results computed by the standard fundamental parameter method.

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38

Kariper, İ. A., and T. Özpozan. "Cobalt Xanthate Thin Film with Chemical Bath Deposition." Journal of Nanomaterials 2013 (2013): 1–9. http://dx.doi.org/10.1155/2013/139864.

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Cobalt xanthate thin films (CXTFs) were successfully deposited by chemical bath deposition, onto amorphous glass substrates, as well as on p- and n-silicon, indium tin oxide, and poly(methyl methacrylate). The structure of the films was analyzed by far-infrared spectrum (FIR), mid-infrared (MIR) spectrum, nuclear magnetic resonance (NMR), and scanning electron microscopy (SEM). These films were investigated from their structural, optical, and electrical properties point of view. Electrical properties were measured using four-point method, whereas optical properties were investigated via UV-VIS spectroscopic technique. Uniform distribution of grains was clearly observed from the photographs taken by scanning electron microscope (SEM). The transmittance was about 70–80% (4 hours, 50°C). The optical band gap of the CXTF was graphically estimated to be 3.99–4.02 eV. The resistivity of the films was calculated as 22.47–75.91 Ω·cm on commercial glass depending on film thickness and 44.90–73.10Ω ·cm on the other substrates. It has been observed that the relative resistivity changed with film thickness. The MIR and FIR spectra of the films were in agreement with the literature analogues. The expected peaks of cobalt xanthate were observed in NMR analysis on glass. The films were dipped in chloroform as organic solvent and were analyzed by NMR.

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39

Yeom, Won Gyun, Chang Hoon Song, Chul Hee Cho, Shin Jae You, and Geun Young Yeom. "Characteristics of Cobalt Thin Films Deposited by Very High Frequency Plasma Enhanced Atomic Layer Deposition (60 and 100 MHz) Using Cobaltocene (Co(Cp)2)/NH3." Journal of Nanoscience and Nanotechnology 21, no. 3 (March 1, 2021): 1826–32. http://dx.doi.org/10.1166/jnn.2021.18950.

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In this study, cobalt films were deposited by plasma enhanced atomic layer deposition (PEALD) with cobaltocene (Co(Cp)2) using two different very high frequency (VHF) NH3 plasmas (60 MHz, 100 MHz), and the effect of different frequencies of VHF on the characteristics of NH3 plasmas and the properties of cobalt films were investigated. It is found that the higher frequency showed the higher plasma density at the same input power and, the NH radicals, which are required to remove the ligands of the cobalt precursor during the plasma exposure step in the ALD cycle, were higher at 100 MHz than those at 60 MHz. The RMS surface roughness and carbon impurity percentage of the deposited cobalt films were lower at the higher frequency possibly indicating denser films due to more active surface reactions at the higher frequency. As a result, it is expected that the cobalt thin films deposited by the higher VHF PEALD will improve the characteristics of deposited thin films.

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40

Fan, Shi-Bin, Guan-Fu Pan, Jing Liang, and Zhen-Yu Tian. "Tailored synthesis of CoOX thin films for catalytic application." RSC Advances 5, no. 118 (2015): 97272–78. http://dx.doi.org/10.1039/c5ra20013j.

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41

Pacheco, F., R. Palomino, G. Martínez, A. Mendoza-Galván, R. Rodriguez, and V. M. Castaño. "Optical Properties of Titania-Cobalt Nitrate Composite Thin Films." Advanced Composites Letters 5, no. 6 (November 1996): 096369359600500. http://dx.doi.org/10.1177/096369359600500603.

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Optical properties of titania thin films supported on silica plates and compounded with varying amounts of Co(II) from cobalt nitrate are reported. The ellipsometric characterization allows to model the spatial micro-structure of these thin film composites. The titania films were produced by the sol-gel method at room temperature and their thicknesses can be controlled by modifying the experimental conditions. The refractive index of the doped titania films was also determined by using ellipsometry.

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42

Chen, Sen, Xiangyu Zhang, Bowen Liu, and Zhongwei Liu. "Pulsed chemical vapor deposition of cobalt and cobalt carbide thin films." Journal of Vacuum Science & Technology A 40, no. 2 (March 2022): 023401. http://dx.doi.org/10.1116/6.0001578.

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43

Han, Seong Ho, Sheby Mary George, Ga Yeon Lee, Jeong Hwan Han, Bo Keun Park, Chang Gyoun Kim, Seung Uk Son, Myoung Soo Lah, and Taek-Mo Chung. "New Heteroleptic Cobalt Precursors for Deposition of Cobalt-Based Thin Films." ACS Omega 2, no. 9 (September 6, 2017): 5486–93. http://dx.doi.org/10.1021/acsomega.7b00800.

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44

Maruyama, Toshiro. "Cobalt Thin Films Prepared by Chemical Vapor Deposition from Cobalt Acetylacetonates." Japanese Journal of Applied Physics 36, Part 2, No. 6A (June 1, 1997): L705—L707. http://dx.doi.org/10.1143/jjap.36.l705.

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45

Lane, Penelope A., Peter E.Oliver, Peter J. Wright, Christopher L. Reeves, Anthony D. Pitt, and Brian Cockayne. "Metal Organic CVD of Cobalt Thin Films Using Cobalt Tricarbonyl Nitrosyl." Chemical Vapor Deposition 04, no. 05 (October 1998): 183–86. http://dx.doi.org/10.1002/(sici)1521-3862(199810)04:05<183::aid-cvde183>3.0.co;2-m.

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46

Ehsan, Muhammad Ali, Muhammad Adil Mansoor, Muhammad Mazhar, Asif Ali Tahir, Mazhar Hamid, and K. G. Upul Wijayantha. "Cobalt titanate-cobalt oxide composite thin films deposited from heterobimetallic precursor." Applied Organometallic Chemistry 26, no. 9 (July 5, 2012): 493–98. http://dx.doi.org/10.1002/aoc.2893.

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47

Melzer, Marcel, Charan K. Nichenametla, Colin Georgi, Heinrich Lang, and Stefan E. Schulz. "Low-temperature chemical vapor deposition of cobalt oxide thin films from a dicobaltatetrahedrane precursor." RSC Adv. 7, no. 79 (2017): 50269–78. http://dx.doi.org/10.1039/c7ra08810h.

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48

A. Hamdan, Suhad, Iftikhar M. Ali, and Isam M.Ibrahim. "Toxic Gas Response for Nanostructured Cobalt Oxide Thin Films." Iraqi Journal of Physics (IJP) 19, no. 50 (September 1, 2021): 20–30. http://dx.doi.org/10.30723/ijp.v19i50.629.

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The gas sensing properties of undoped Co3O4 and doped with Y2O3 nanostructures were investigated. The films were synthesized using the hydrothermal method on a seeded layer. The XRD, SEM analysis and gas sensing properties were investigated for the prepared thin films. XRD analysis showed that all films were polycrystalline, of a cubic structure with crystallite size of (12.6) nm for cobalt oxide and (12.3) nm for the Co3O4:6% Y2O3. The SEM analysis of thin films indicated that all films undoped Co3O4 and doped possessed a nanosphere-like structure. The sensitivity, response time and recovery time to H2S reducing and NO2 oxidizing gases were tested at different operating temperatures. The resistance changed with exposure to the test gas. The results revealed that the Co3O4:6%Y2O3 possessed the highest sensitivity around 90% (at room temperature) and 62.5% (at 150 oC) when exposed to the reducing gas H2S and oxidizing gas NO2, respectively with 0.8sec for both recovery and response times.

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Yuan, Bing, Riyue Ge, Shi-Zhao Kang, Lixia Qin, Guodong Li, and Xiangqing Li. "Self-directedly assembled porphyrin thin films with high photoactivity." RSC Advances 5, no. 114 (2015): 94046–52. http://dx.doi.org/10.1039/c5ra17015j.

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Nikam, S. M., A. Sharma, M. Rahaman, A. M. Teli, S. H. Mujawar, D. R. T. Zahn, P. S. Patil, S. C. Sahoo, G. Salvan, and P. B. Patil. "Pulsed laser deposited CoFe2O4 thin films as supercapacitor electrodes." RSC Advances 10, no. 33 (2020): 19353–59. http://dx.doi.org/10.1039/d0ra02564j.

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Cobalt ferrite thin films were grown by PLD at different temperatures as an electrode material for supercapacitors. The films deposited at room temperature exhibited the best power density (3277 W kg⁻¹) and energy density (17 W h kg⁻¹) values.

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