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1
Phillips, Julia M. "Substrate Selection for Thin-Film Growth." MRS Bulletin 20, no. 4 (April 1995): 35–39. http://dx.doi.org/10.1557/s0883769400044651.
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Although it is an integral part of any structure involving a film, the substrate is often taken for granted. The choice of substrate is, however, one of the most important materials issues in thin-film growth. This article focuses on substrates for thin films and will provide criteria for selecting the proper material needed to fill specific application requirements. As will become obvious, the ideal substrate for a given film often does not exist. Specific applications require different substrate materials that offer an acceptable compromise for the purpose at hand. Ideally, the substrate should give mechanical support but not interact with the film except to provide sufficient adhesion, and in many cases, the provision of a template for atomic ordering. In practice, however, the substrate exerts considerable influence on film characteristics. The search for viable substrate materials is an active area of research.
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Cong, Hailin, and Weixiao Cao. "Thin Film Interference of Colloidal Thin Films." Langmuir 20, no. 19 (September 2004): 8049–53. http://dx.doi.org/10.1021/la049118+.
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Singh, Vaibhav, and Gaurav Saxena. "Self-Rechargeable Paper Thin-Film Batteries." International Journal of Trend in Scientific Research and Development Volume-3, Issue-3 (April 30, 2019): 1213–15. http://dx.doi.org/10.31142/ijtsrd22872.
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Messier, Russell. "Thin Film Deposition Processes." MRS Bulletin 13, no. 11 (November 1988): 18–21. http://dx.doi.org/10.1557/s0883769400063879.
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Thin film materials pervade our everyday life as transparent conductors in LCD watches and computer displays and in defrosters for automobiles... antireflection coatings for camera lenses… optical fibers for communication … architectural glass coatings for both color and energy efficiency… solar cells… decorative coatings on plastics such as for toys and automobiles parts… a whole host of electronic and optoelectronic devices… hard coatings for cutting tools, drill bits, and bearings … even metallic coatings inside potato chip bags to keep the chips crisp!Without thin films our lifestyles would be drastically different. And this trend toward increased use of thin film technology will only continue.The varied reasons for using thin films and the specific deposition processes for preparing them are often complex; but usually relate to function, cost, beauty, materials and energy efficiency, and performance. In addition to technological applications, scientists are finding thin films to be an invaluable tool for investigating new physical phenomena, even at the quantum level. For instance, two of the most important new materials—high temperature ceramic superconductors and diamond coatings — are currently being made by several thin film deposition processes in order to explore both their scientific and technological potential.Just 25 years ago the variety of deposition processes for preparing thin films was quite limited. Thin film scientists and technologists had at their disposal electrodeposition, elementary chemical vapor deposition, evaporation, and dc sputtering. Commercial equipment for electron-beam evaporation, a mainstay in the optical coatings industry, was just being developed. Most of the deposition processes reviewed in this and next month's MRS BULLETIN were either not commercially available or were not even conceived of then.
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Muralt, Paul. "Piezoelectric Thin Film Devices." Advances in Science and Technology 67 (October 2010): 64–73. http://dx.doi.org/10.4028/www.scientific.net/ast.67.64.
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The field of piezoelectric thin films for micro and nano systems combines an exciting richness of potential applications with many attractive scientific topics on materials processing and physical properties. Piezoelectricity transforms a mechanical stimulus into an electrical signal, or electrical energy. Miniature thin film devices detect and measure vibrations and acoustic waves, as well as generate electrical power in the mW range by the harvesting of vibration energy. An electrical stimulus can be applied to generate acoustic waves, to damp actively vibrations detected by the same film, or to drive a micro robot. The ability to act in both directions of transfer between mechanical and electrical energy allows for high-performing filters, oscillators, and gravimetric sensors working at frequencies up to10 to 20 GHz. While rigid piezoelectric thin films like AlN excel in GHz applications such as RF filters, ferroelectric thin films like Pb(Zr,Ti)O3 are more efficient in energy conversion and include as further dimension a programmable polarity, which is useful for memory applications.
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Kumar, Vikas. "Unraveling Squeeze Film Dynamics: Illuminating Thin Film Properties and Hydrodynamic Behavior." International Journal of Science and Research (IJSR) 13, no. 5 (May 5, 2024): 1352–58. http://dx.doi.org/10.21275/sr24521113452.
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Tsuchiya, Toshiyuki, and Hirofumi Funabashi. "OS06W0384 Young's modulus measurement of polysilicon thin film using thin film tensile tester equipped with electrostatic force grip." Abstracts of ATEM : International Conference on Advanced Technology in Experimental Mechanics : Asian Conference on Experimental Mechanics 2003.2 (2003): _OS06W0384. http://dx.doi.org/10.1299/jsmeatem.2003.2._os06w0384.
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SHUR, MICHAEL S., SERGEY L. RUMYANTSEV, and REMIS GASKA. "SEMICONDUCTOR THIN FILMS AND THIN FILM DEVICES FOR ELECTROTEXTILES." International Journal of High Speed Electronics and Systems 12, no. 02 (June 2002): 371–90. http://dx.doi.org/10.1142/s0129156402001320.
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We discuss the evolution from wearable electronics and conductive textiles to electrotextiles with embedded semiconducting films and semiconductor devices and review different semiconductor technologies competing for applications in electrotextiles. We also report on fabrication, characterization, and properties of nanocrystalline semiconductor and metal films and thin-film device structures chemically deposited on fibers, cloth, and large area flexible substrates at low temperatures (close to room temperature). Our approach is based on a new process of depositing polycrystalline CdSe (1.75 eV), CdS (2.4 eV), PbS (0.4 eV), PbSe (0.24 eV) and CuxS (semiconductor/metal) films on flexible substrates from the water solutions of complex-salt compounds. We have covered areas up to 8 × 10 inches but the process can be scaled up. The film properties are strongly affected by processing. We fabricated a lateral solar cell with alternating Cu2-xS and nickel contact stripes deposited on top of a view foil. These sets of contacts represented "ohmic" and "non-ohmic" contacts, respectively. Then CdS films of approximately 0.5 μm thick were deposited on top. We also fabricated a "sandwich" type photovoltaic cell, where the CdS film was sandwiched between an In2O3 layer deposited on a view foil and a Cu2-xS layer deposited on top. Both structures exhibited transient response under light, with the characteristic response time decreasing with the illumination wavelength. This is consistent with having deeper localized states in the energy gap determining the transients for shorter wavelength radiation. (Slow transients related to trapping effects are typical for polycrystalline CdS materials.) We also report on the photovoltaic effect in CdS/CuS films deposited on trylene threads and on a field effect in these films deposited on a flexible copper wire. CdS films deposited on viewfoils exhibit unique behavior under stress and UV radiation exposure with reproducible resistance changes of several orders of magnitude with bending up to 10 mm curvature. Our results clearly demonstrate the feasibility of using this technology for photovoltaic and microelectronics applications for electrotextiles and wearable electronics applications.
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Kannan, K., B. Manjunatha, T. Marimuthu, and P. Sangeetha. "Performance analysis of CdS-based thin films in photovoltaic applications." Chalcogenide Letters 22, no. 2 (March 3, 2025): 167–75. https://doi.org/10.15251/cl.2025.222.167.
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Cadmium sulfide (CdS) thin films are extensively utilized as a window layer in photovoltaic (PV) devices due to their high transmittance, suitable bandgap, and favorable electrical properties. This work presents a comprehensive performance analysis of CdS based thin films in PV applications, examining key factors such as optical, electrical, and structural properties. The bandgap (approximately 2.42 eV) allows effective photon transmission, reducing energy losses. Critical performance metrics, including film thickness, grain size, crystallinity, and interface quality with the absorber layer, are optimized to enhance charge separation and minimize recombination losses. The study highlights the balance between thin-film transparency and thickness to maximize photon absorption while ensuring film durability and stability in environmental conditions. The findings underscore the potential of CdS thin films to improve PV cell efficiency, offering insights into achieving higher fill factor (FF), short-circuit current (Jsc) and open-circuit voltage (Voc) in CdS-based PV devices.
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Chakraborty, Jay. "Phase Transformation in Ultra-Thin Films." Advanced Materials Research 996 (August 2014): 860–65. http://dx.doi.org/10.4028/www.scientific.net/amr.996.860.
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Thickness dependent structural phase transformation in thin polycrystalline metal films has been reviewed. Various effects of film thickness reduction on film microstructure have been identified. Film thickness dependent structural phase transformation has been treated thermodynamically taking polycrystalline titanium (Ti) thin film as model example.
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Judy, Jack H. "Thin Film Recording Media." MRS Bulletin 15, no. 3 (March 1990): 63–72. http://dx.doi.org/10.1557/s088376940006019x.
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The rapidly growing demand for magnetic information storage systems at lower cost and higher capacity has driven the magnetic recording industry to accelerate development of thin film magnetic recording media. The ultimate recording density depends on the bit transition lengths, as shown in Figure 1 for various media, and on signal-to-noise ratio, which is proportional to the number of particles per bit. Longitudinal thin film media bit transition lengths are limited by thickness, magnetic properties, and zig-zag magnetic domain microstructures at the transitions, whereas in perpendicular media the principal limitation is the diameter of the grains. The recent development of quasi-particulate longitudinal and perpendicular thin film media indicates that areal bit densities substantially exceeding 109 bits/inch2 will be achieved in the future.This article will review magnetic phenomena relevant to thin film recording media, describe macromagnetic and micromagnetic characterization techniques, survey the development of state-of-the-art thin film media, correlate micromagnetics with magnetic properties, media noise, and recording performance, and discuss future requirements of longitudinal and perpendicular thin film recording media.Ferromagnetic and ferrimagnetic thin films exhibit a nonlinear, multivalued, and hysteretic relationship between the magnetic dipole moments per volume or magnetization M and the magnetizing field intensity H as shown in Figure 2 for the component of M in the direction of H.
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NOBETANI, KOJI. "Thin film." Nihon Kessho Gakkaishi 31, no. 2 (1989): 98–105. http://dx.doi.org/10.5940/jcrsj.31.98.
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Malikov, Vladimir N., Alexey V. Ishkov, Alexey A. Grigorev, Denis A. Fadeev, and Mihail A. Ryasnoi. "Investigation of Ni-Al Intermetallic Thin Films." Key Engineering Materials 854 (July 2020): 140–47. http://dx.doi.org/10.4028/www.scientific.net/kem.854.140.
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The article describes the results of studies of Ni-Al ultrathin films obtained by the resistive thermal evaporation method and having the characteristic dimensions of islands of 700-1000 nm with a film thickness of about 500 nm. This paper presents a method of obtaining a film using a unit for creating high vacuum and the subsequent deposition of the film. The obtained film sample was studied using an optical microscope, a scanning probe microscope and a Fourier analyzer. The kinetic characteristics of the film, the film relief, and the characteristic dimensions of the islands were established; the search for regularities in the island structure of films was carried out and its electrical conductivity was determined.
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Zhou, Bo, and Barton C. Prorok. "A new paradigm in thin film indentation." Journal of Materials Research 25, no. 9 (September 2010): 1671–78. http://dx.doi.org/10.1557/jmr.2010.0228.
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A new method to accurately and reliably extract the actual Young's modulus of a thin film on a substrate by indentation was developed. The method involved modifying the discontinuous elastic interface transfer model to account for substrate effects that were found to influence behavior a few nanometers into a film several hundred nanometers thick. The method was shown to work exceptionally well for all 25 different combinations of five films on five substrates that encompassed a wide range of compliant films on stiff substrates to stiff films on compliant substrates. A predictive formula was determined that enables the film modulus to be calculated as long as one knows the film thickness, substrate modulus, and bulk Poisson's ratio of the film and the substrate. The calculated values of the film modulus were verified with prior results that used the membrane deflection experiment and resonance-based methods. The greatest advantages of the method are that the standard Oliver and Pharr analysis can be used, and that it does not require the continuous stiffness method, enabling any indenter to be used. The film modulus then can be accurately determined by simply averaging a handful of indents on a film/substrate composite.
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Iwamori, Satoru. "Adhesion and Friction Properties of Fluorocarbon Polymer Thin Films Coated onto Metal Substrates." Key Engineering Materials 384 (June 2008): 311–20. http://dx.doi.org/10.4028/www.scientific.net/kem.384.311.
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Poly(tetrafluoroethylene)(PTFE) thin films were coated onto metal substrates by a spin coat apparatus, vacuum evaporator and RF sputtering, and their adhesion and friction properties evaluated. PTFE thin film coated onto nickel-titanium (Ni-Ti) substrate by spin coating showed a low friction coefficient, however pull strength between the thin film and Ni-Ti substrate was low. In order to increase the pull strength, PTFE and poly(vinyl alcohol) (PVA) composite thin films were introduced between the PTFE thin film and Ni-Ti substrate by spin coating. PTFE thin film was also coated onto SUS302 substrate by a vacuum evaporator. This PTFE thin film showed poor adhesion to the SUS302 substrate. The adhesion was enhanced by heating of the substrate during the evaporation. In addition, a PTFE and ethylene vinyl alcohol (EVOH) composite thin film showed higher adhesion strength than that of the PTFE thin film. Poly(fluorocarbon) thin films were prepared by a conventional RF sputtering with PTFE target. These thin films showed a higher friction coefficient than that of the pristine PTFE. Molecular structures of the poly(fluorocarbon) thin films prepared by RF sputtering were different from the pristine PTFE. This difference may have influenced the friction coefficient. The pull strength of metal thin films such as gold, copper, nickel and aluminum deposited on the sputtered PTFE thin films by vacuum evaporation was measured. The nickel thin film adhered to the PTFE thin film most strongly of all the thin films.
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Jung, Hyun Wook. "Special Issue on "Thin Film Processes"." Processes 8, no. 5 (May 11, 2020): 564. http://dx.doi.org/10.3390/pr8050564.
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Md Sin, N. D., Mohamad Hafiz Mamat, and Mohamad Rusop. "Optical Properties of Nanostructured Aluminum Doped Zinc Oxide (ZnO) Thin Film for Thin Film Transistor (TFT) Application." Advanced Materials Research 667 (March 2013): 511–15. http://dx.doi.org/10.4028/www.scientific.net/amr.667.511.
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The properties of nanostructured aluminum (Al) doped zinc oxide (ZnO) thin film for thin film transistors (TFT) are presented. This research has been focused on optical and structural properties of Al doped ZnO thin film. The influence of Al doping concentration at 0~5 at.% on the Al doped ZnO thin film properties have been investigated. The thin films were characterized using UV-Vis-NIR spectrophotometer for optical properties. The surface morphology has been characterized using field emission scanning electron microscope (FESEM). The absorption coefficient spectra obtained from UV-Vis-NIR spectrophotometer measurement show all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties. The calculated Urbach energy indicated the defects concentrations in the thin films increase with doping concentrations The FESEM investigations shows that the nanoparticles size becomes smaller and denser as the doping concentration increase.
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Cheng, Ching Hsuang, Wan Yu Wu, and Jyh Ming Ting. "Nanoscaled Multilayer Thin Films Based on GZO." Journal of Nano Research 2 (August 2008): 61–67. http://dx.doi.org/10.4028/www.scientific.net/jnanor.2.61.
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Nanoscaled gallium-doped ZnO (GZO) thin films, bi-layer Pt/GZO thin films, and tri-layer GZO/Pt/GZO thin films were prepared and their characteristics were investigated. These films were deposited on glass substrates using either rf or dc magnetron sputter deposition. The deposition time and the target-to-substrate distance were varied to obtain different total film thicknesses and layer thicknesses. Effects of total film and layer thicknesses on the optical properties and the electrical properties were studied. Theoretical calculations were performed to discuss effect of the thickness on the optical transmittance of the GZO film. As-deposited GZO films show high electrical resistivity, which was greatly reduced by 2 to 3 orders of magnitude due to the introduction of a surface layer of Pt film. However, the optical transmittance was also reduced. This was improved by using an addition anti-refractive GZO surface layer on the Pt/GZO. A GZO/Pt/GZO film exhibiting visible light transmittance greater than 75% and electrical resistivity in the order of 10-4 ohm-cm was obtained.
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Li, Tsai Cheng, Rwei Ching Chang, and Y. C. Li. "Characterization of Conductive Thin Films Deposited by Ink Jet Printing." Applied Mechanics and Materials 284-287 (January 2013): 57–61. http://dx.doi.org/10.4028/www.scientific.net/amm.284-287.57.
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With the advantage of simplicity and low cost, ink jet printing has the potential to replace the traditional chemical and physical deposition technology in thin film fabrication. In this work, silver conductive thin films are deposited on glass and polyimide substrates by ink jet printing, where some major characteristics of the printed thin films are investigated and compared to those deposited by sputtering. The micro texture and residual stresses of the thin films are measured with X-ray diffractometry (XRD). Using thin film scratch tester, the adhesion of thin films deposited by both ink jet printing and sputtering is studied. Further observations on electric and optical performance by using visible wavelength photospectrometry, four-point probe, and surface profiler are also discussed. The result shows that the micro texture of the printed thin film behaves as good as the sputtered thin film. Furthermore, the micro scratch result illustrates that the adhesion of the printed thin film is even better than the sputtered thin film. It emphasizes that, after certain baking process, the ink jet printing has the possibility to replace sputtering in thin film deposition, especially for the polymer substrates.
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Motai, Daiki, and Hideaki Araki. "Fabrication of (Ge0.42Sn0.58)S Thin Films via Co-Evaporation and Their Solar Cell Applications." Materials 17, no. 3 (February 1, 2024): 692. http://dx.doi.org/10.3390/ma17030692.
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In this study, as a novel approach to thin-film solar cells based on tin sulfide, an environmentally friendly material, we attempted to fabricate (Ge, Sn)S thin films for application in multi-junction solar cells. A (Ge0.42 Sn0.58)S thin film was prepared via co-evaporation. The (Ge0.42 Sn0.58)S thin film formed a (Ge, Sn)S solid solution, as confirmed by X-ray diffraction (XRD) and Raman spectroscopy analyses. The open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF), and power conversion efficiency (PCE) of (Ge0.42 Sn0.58)S thin-film solar cells were 0.29 V, 6.92 mA/cm2, 0.34, and 0.67%, respectively; moreover, the device showed a band gap of 1.42–1.52 eV. We showed that solar cells can be realized even in a composition range with a relatively higher Ge concentration than the (Ge, Sn)S solar cells reported to date. This result enhances the feasibility of multi-junction SnS-system thin-film solar cells.
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Chen, Yen-Hua, and Kuo-Jui Tu. "Thickness Dependent on Photocatalytic Activity of Hematite Thin Films." International Journal of Photoenergy 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/980595.
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Hematite (Fe2O3) thin films with different thicknesses are fabricated by the rf magnetron sputtering deposition. The effects of film thicknesses on the photocatalytic activity of hematite films have been investigated. Hematite films possess a polycrystalline hexagonal structure, and the band gap decreases with an increase of film thickness. Moreover, all hematite films exhibit good photocatalytic ability under visible-light irradiation; the photocatalytic activity of hematite films increases with the increasing film thickness. This is because the hematite film with a thicker thickness has a rougher surface, providing more reaction sites for photocatalysis. Another reason is a lower band gap of a hematite film would generate more electron-hole pairs under visible-light illumination to enhance photocatalytic efficiency. Experimental data are well fitted with Langmuir-Hinshelwood kinetic model. The photocatalytic rate constant of hematite films ranges from 0.052 to 0.068 min-1. This suggests that the hematite film is a superior photocatalyst under visible-light irradiation.
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Kim, Do Hyoung, Han Ki Yoon, Do Hoon Shin, and Riichi Murakami. "Electromagnetic Wave Shielding Properties of ITO/PET Thin Film by Film Thickness." Key Engineering Materials 345-346 (August 2007): 1585–88. http://dx.doi.org/10.4028/www.scientific.net/kem.345-346.1585.
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The thin films of indium tin oxide (ITO) are used for a variety of electronic devices such as solar cells, touch panels, liquid crystal displays (LCDs). However, these electronic devices are not strong enough against heavy impact since their ITO thin films are deposited on glass substrates. Therefore, ITO thin films were prepared by the inclination opposite target type DC magnetron sputtering equipment onto the Polyethylene Terephthalate (PET) substrate at room temperature using oxidized ITO with In2O3 and SnO2 in a weight ratio of 9:1. In this study, the transmittance, resistivity and electromagnetic wave shielding effectiveness of the ITO thin films prepared at various sputtering time (20~80min namely film thickness; 130~500nm) are measured. The results show that transmittance of the ITO thin films could show about 70% in the range of a visible ray by the variation of film thickness. It also can be seen that a minimum exists in the resistivity of ITO thin films for the variation of film thickness. Electromagnetic wave shielding effectiveness was increased as film thickness increased.
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Dohi, Takaaki, Robert M. Reeve, and Mathias Kläui. "Thin Film Skyrmionics." Annual Review of Condensed Matter Physics 13, no. 1 (March 10, 2022): 73–95. http://dx.doi.org/10.1146/annurev-conmatphys-031620-110344.
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In condensed matter physics, magnetic skyrmions, topologically stabilized magnetic solitons, have been discovered in various materials systems, which has intrigued the community in terms of not only fundamental physics but also with respect to engineering applications. In particular, skyrmions in thin films are easily manipulable by electrical means even at room temperature. Concomitantly, a variety of possible applications have been proposed and proof-of-concept devices have been demonstrated. Recently, the field of skyrmion-based electronics has been referred to as skyrmionics and this field has been rapidly growing and extended in multiple directions. This review provides recent progress for skyrmion research in thin film systems and we discuss promising new directions, which will further invigorate the field.
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Qiu, Lei, Jiaxiong Xu, and Xiao Tian. "Fabrication of Ag and Mn Co-Doped Cu2ZnSnS4 Thin Film." Nanomaterials 9, no. 11 (October 25, 2019): 1520. http://dx.doi.org/10.3390/nano9111520.
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Ag and Mn dopants were incorporated into Cu2ZnSnS4 thin film to reduce defects in thin film and improve thin film properties. Sol–gel and spin-coating techniques were employed to deposit Ag and Mn co-doped Cu2ZnSnS4 thin films. The structures, compositions, morphologies, and optical properties of the co-doped thin films were characterized. The experimental results indicate the formation of kesterite structure without Ag and Mn secondary phases. The amount of Ag in the thin films is close to that in the sols. The co-doped Cu2ZnSnS4 thin films have an absorption coefficient of larger than 1.3 × 104 cm−1, a direct optical band gap of 1.54–2.14 eV, and enhanced photoluminescence. The nonradiative recombination in Cu2ZnSnS4 thin film is reduced by Ag and Mn co-doping. The experimental results show that Ag and Mn incorporation can improve the properties of Cu2ZnSnS4 thin film.
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Ishida, Akira, and Morio Sato. "Development of Polyimide/SMA Thin-Film Actuator." Materials Science Forum 654-656 (June 2010): 2075–78. http://dx.doi.org/10.4028/www.scientific.net/msf.654-656.2075.
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Ti-Ni-Cu shape memory alloy (SMA) thin films were sputter-deposited on heated polyimide substrates. The (Ni,Cu) rich Ti-Ni-Cu films deposited at a substrate temperature of 543 K were found to possess a high martensitic transformation temperature above room temperature over a wide range of Cu content from 7 to 23 at%, which allows stable production of actuators that operate at room temperature. Additional deposition of a Cu film onto the Ti-Ni-Cu films facilitated the soldering of wires onto the actuators and also decreased the power consumption and response time of the actuator. The force of a polyimide/Ti-Ni-Cu SMA actuator could be increased merely by increasing the thickness of the polyimide film. An actuator composed of a 125 m thick polyimide film and an 8 m thick TiNiCu film was able to lift a 13.5 g weight. Furthermore, a Ti-Ni-Cu film could be pattern etched on a polyimide film to produce a circuit. The results indicate that a polyimide/SMA film actuator is a promising simple actuator that can be produced by simply cutting out an appropriately shaped piece with scissors or by punching and then connecting the two edges to a battery by soldering.
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Seo, Jong Hyun, Jae Hong Jeon, and Hee Hwan Choe. "Prevention of Thin Film Failures for PECVD Amorphous-Si on Plastic Substrate." Solid State Phenomena 124-126 (June 2007): 387–90. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.387.
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Amorphous silicon thin films were deposited below 160oC on PES plastic films using PECVD. After thin film deposition using PECVD, thin film failures such as film delamination and cracking often occurred. For successful growth of thin films (about 2000 Å) without their failures, it is necessary to solve the critical problem related to the internal compressive stress (some GPa) leading to delamination at a threshold thickness value of the films. The Griffith’s theory explains the failure process by looking at the excess of elastic energy inside the film, which overcomes the cohesive energy between film and substrate. In this work, reducing a-Si layer film thickness and optimizing a barrier SiNx layer have produced stable a-Si films at 150oC, over PES substrates.
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Sibanda, David, Sunday Temitope Oyinbo, Tien-Chien Jen, and Ayotunde Idris Ibitoye. "A Mini Review on Thin Film Superconductors." Processes 10, no. 6 (June 14, 2022): 1184. http://dx.doi.org/10.3390/pr10061184.
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Thin superconducting films have been a significant part of superconductivity research for more than six decades. They have had a significant impact on the existing consensus on the microscopic and macroscopic nature of the superconducting state. Thin-film superconductors have properties that are very different and superior to bulk material. Amongst the various classification criteria, thin-film superconductors can be classified into Fe based thin-film superconductors, layered titanium compound thin-film superconductors, intercalation compounds of layered and cage-like structures, and other thin-film superconductors that do not fall into these groups. There are various techniques of manufacturing thin films, which include atomic layer deposition (ALD), chemical vapour deposition (CVD), physical vapour deposition (PVD), molecular beam epitaxy (MBE), sputtering, electron beam evaporation, laser ablation, cathodic arc, and pulsed laser deposition (PLD). Thin film technology offers a lucrative scheme of creating engineered surfaces and opens a wide exploration of prospects to modify material properties for specific applications, such as those that depend on surfaces. This review paper reports on the different types and groups of superconductors, fabrication of thin-film superconductors by MBE, PLD, and ALD, their applications, and various challenges faced by superconductor technologies. Amongst all the thin film manufacturing techniques, more focus is put on the fabrication of thin film superconductors by atomic layer deposition because of the growing popularity the process has gained in the past decade.
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Damaghi, Amirreza, Somayeh Ali Karami, Samuel Adesanoye, Shiljashree Vijay, Wei Cheng, and Syed Mubeen Jawahar Hussaini. "Electrochemical Synthesis and Optimization of CdSexTe1-X Thin-Films for Enhanced Solar Cell Performance." ECS Meeting Abstracts MA2024-02, no. 59 (November 22, 2024): 4000. https://doi.org/10.1149/ma2024-02594000mtgabs.
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The considerably wide light absorption spectrum and excellent chemical stability of CdSexTe1-x alloyed thin films show its significant applicability in solar cell thin film technology. In this study, a novel, economical electrodeposition technique was utilized to synthesize the CdSexTe1-x thin films, offering a simpler setup and reduced energy consumption compared to other methods of solar cell fabrication used in industrial scale. The performance of CdSexTe1-x thin film was examined with respect to several parameters, such as electrolyte composition, electrodeposition potential, treatment solution, and annealing temperature. XRD, SEM, and EDS were employed to investigate the fabricated CdSexTe1-x thin film's crystallinity, morphology, and elemental compositions. The synthesized CdSexTe1-x thin film demonstrated promising fill factor, short circuit photocurrent density (Jsc), and open-circuit voltage (Voc). The results reveal that the synthesized CdSexTe1-x thin film exhibited enhanced physical characteristics and photoelectrochemical solar cells performances as remarkable light harvesting absorber layers.
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Sun, Qi, Boyan Li, Xingye Huang, Zhihua Han, Dalong Zhong, and Ying Zhao. "A process study of high-quality Zn(O,S) thin-film fabrication for thin-film solar cells." Clean Energy 7, no. 2 (March 25, 2023): 283–92. http://dx.doi.org/10.1093/ce/zkac069.
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Abstract The Zn(O,S) thin film is considered a most promising candidate for a cadmium-free buffer layer of the Cu(In,Ga)Se2 (CIGS) thin-film solar cell due to its advantages of optical responses in the short-wavelength region and adjustable bandgap. In this paper, the thin-film growth mechanism and process optimization of Zn(O,S) films fabricated using the chemical bath deposition method are systematically investigated. The thickness and quality of Zn(O,S) films were found to be strongly affected by the concentration variation of the precursor chemicals. It was also revealed that different surface morphologies of Zn(O,S) films would appear if the reaction time were changed and, subsequently, the optimum reaction time was defined. The film-growth curve suggested that the growth rate varied linearly with the deposition temperature and some defects appeared when the temperature was too high. In addition, to further improve the film quality, an effective post-treatment approach was proposed and the experimental results showed that the microstructure of the Zn(O,S) thin film was improved by an ammonia etching process followed by an annealing process. For comparison purposes, both Zn(O,S)-based and CdS-based devices were fabricated and characterized. The device with a Zn(O,S)-CIGS solar cell after post-treatment showed near conversion efficiency comparable to that of the device with the CdS-CIGS cell.
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KIM, Su Jae, Miyeon CHEON, and Se-Young JEONG. "Making Metallic Thin Films Atomically Flat." Physics and High Technology 29, no. 7/8 (August 31, 2020): 3–12. http://dx.doi.org/10.3938/phit.29.024.
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Can we control the flatness of the surface of a thin film down to the level of individual atoms? Can we further make such an ultraflat surface on a wafer scale? For such purposes, the current deposition methods, including molecular beam epitaxy (MBE), atomic layer deposition (ALD) and conventional sputtering methods, are still not adequate. In this article, we introduce a novel thin film deposition technique developed by modifying a simple sputtering method to make atomically flat metallic surfaces and a new way to investigate the structural details of thin films grown at the atomic level. For thin film, heteroepitaxial growth of a crystalline film on a different crystalline substrate is usual, and the lattice mismatch between the crystalline film and the substrate occurring in heteroepitaxy produces many misfits at the interface, which create various defects, including dislocations and grain boundaries that eventually lead to a rough surface and the deterioration of the overall quality of the crystal. The metamorphic growth method utilizing the extended atomic distance mismatch (EADM) helps to achieve successful growth of thin films in spite of a large lattice mismatch by calculating the match for a relatively long period in advance. Having an ultraflat surface for thin films made of metals such as copper has many advantages. Several advantages and possible applications of metal thin films with ultraflat surfaces are introduced.
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Chen, Chang, Zi Liu, Gui Wang, and Xiao Feng. "Fabrication and characterization of compositionally graded Bi1−x GdxFeO3 thin films." Materials Science-Poland 32, no. 3 (September 1, 2014): 498–502. http://dx.doi.org/10.2478/s13536-014-0213-1.
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AbstractAn undoped BiFeO3 thin film, Gd doped Bi0.95Gd0.05FeO3 thin film with a constant composition, Gd up-graded doped Bi1−x GdxFeO3 and Gd down-graded doped Bi1−x GdxFeO3 thin films were successfully grown on Pt (111)/Ti/SiO2/Si (100) substrates using a sol-gel and spin coating technique. The crystal structure, ferroelectric and dielectric characteristics as well as the leakage currents of these samples were thoroughly investigated. The XRD (X-Ray Diffraction) patterns indicate that all these thin films consist of solely perovskite phase with polycrystalline structure. No other secondary phases have been detected. Clear polarization-electric field (P-E) hysteresis loops of all these thin films demonstrate that the incorporation of Gd3+ into the Bi site of BFO thin film have enhanced the ferroelectric performance of pure BiFeO3 thin film, and the Gd down-graded doped Bi1−x GdxFeO3 thin film has the best ferroelectric properties. Compared to other thin films, the optimal ferroelectric behavior of the Gd down-graded doped Bi1−x GdxFeO3 thin film results from its large dielectric constant, low dissipation factor and low leakage current.
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Tho, L. V., K. E. Lee, Cheol Gi Kim, Chong Oh Kim, and W. S. Cho. "Microstructure and Magnetic Properties of CoFeHfO Rich Nanocrystalline Thin Films Application for High Frequency." Materials Science Forum 558-559 (October 2007): 975–78. http://dx.doi.org/10.4028/www.scientific.net/msf.558-559.975.
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Nanocrystalline CoFeHfO thin films have been fabricated by RF sputtering method. Co52Fe23Hf10O15 thin film is observed, exhibit good magnetic properties with magnetic coercivity (Hc) of 0.18 Oe; anisotropy fild (Hk) of 49 Oe; saturation magnetization (4лMs) of 21 kG, and electrical resistivity (ρ) of 300 01cm. The frequency response of permeability of the film is excellent. The effect of microstructure on the electrical and magnetic properties of thin film was studied using X-ray diffraction (XRD) analysis and conventional transmission electron microscopy (TEM). The results showed that excellent soft magnetic properties were associated with granular nannoscale grains of α-CoFe and α-Co(Fe) phases.
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Sakthinathan, Subramanian, Ganesh Abinaya Meenakshi, Sivaramakrishnan Vinothini, Chung-Lun Yu, Ching-Lung Chen, Te-Wei Chiu, and Naratip Vittayakorn. "A Review of Thin-Film Growth, Properties, Applications, and Future Prospects." Processes 13, no. 2 (February 19, 2025): 587. https://doi.org/10.3390/pr13020587.
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This review article’s primary aim is to discuss different thin-film deposition technique methods and their important uses. The histories of thin-film technology, thin-film growth, thin-film classification, and thin-film preparation techniques are also covered in this review article. The preparation and characterization of functional thin films and nanostructured materials, as well as various devices based on these materials and recent developments are also focused on in this review. The properties of the materials and several thin-film deposition techniques are also covered in this article. This review article also discusses the classification and application of thin-film sensors. Furthermore, the formation of thin films and their physical properties are impacted by deposition conditions such as pH, temperature, deposition time, and deposition parameters, which are analyzed. This article discusses how a wide range of potential uses in structural, mechanical, and protective coatings; sensing; energy storage systems; catalysis; optoelectronics; and biomedicine are made possible by the special qualities of thin films and nanostructured materials, including their high surface area to volume ratio, structure, surface charge, anisotropic nature, and tunable functionalities.
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Hu, Dong Ping, and Xiao Long Wang. "Study of Thin Film Pressure Sensor by Magnetron Sputtering." Key Engineering Materials 645-646 (May 2015): 566–71. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.566.
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The use of sensors made of thin films has several advantages over wire or foil sensors. Thin film pressure sensors can be used in high temperature, vibration and other special environment with small volume, high sensitivity and stability. Thin film pressure sensors can be made by magnetron sputtering. In this paper the thin film pressure sensors are prepared by elastic Element polishing, growth of dielectric film, NiCr alloy and Ni films with magnetron sputtering, the process and results are analyzed.
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Wang, Xiao, Zhihua Shen, Jie Li, and Shengli Wu. "Preparation and Properties of Crystalline IGZO Thin Films." Membranes 11, no. 2 (February 14, 2021): 134. http://dx.doi.org/10.3390/membranes11020134.
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IGZO thin films can be used as active layers of thin-film transistors and have been widely studied. However, amorphous indium gallium zinc oxide (IGZO) fabricated at room temperature is vulnerable in subsequent manufacturing processes, such as etching and sputtering; this limits IGZO thin film transistors’ (TFTs) use in commercial products. In this paper, we prepared a c-axis crystallized IGZO thin film by Radio Frequency (RF) sputtering at 180 °C, with a 50% O2 ratio and 110 W power. XRD images show that the crystallized film has an obvious diffraction peak near 31°, and the spacing between the crystal surfaces was calculated to be ≈0.29 nm. The HRTEM map confirmed the above results. The stability of IGZO thin films was investigated by etching them with an acid solution. The crystalline IGZO films exhibited better acid corrosion resistance, and their anticorrosion performance was 74% higher than that of amorphous IGZO (a-IGZO) films, indicating the crystalline IGZO film can provide more stable performance in applications.
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Saurdi, I., M. H. Mamat, M. F. Malek, and M. Rusop. "Preparation of Aligned ZnO Nanorod Arrays on Sn-Doped ZnO Thin Films by Sonicated Sol-Gel Immersion Fabricated for Dye-Sensitized Solar Cell." Advances in Materials Science and Engineering 2014 (2014): 1–8. http://dx.doi.org/10.1155/2014/636725.
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Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (~20 nm), high average transmittance (96%) in visible region, and good resistivity7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtained for 2 at.% Sn-doped ZnO thin film. They were grown on sol-gel derived Sn-doped ZnO thin film, which acts as a seed layer, via sonicated sol-gel immersion method. The grown aligned ZnO nanorod arrays show high transmittance at visible region. The fabricated dye-sensitised solar cell based on the 2.0 at.% Sn-doped ZnO thin film with aligned ZnO nanorod arrays exhibits improved current density, open-circuit voltage, fill factor, and conversion efficiency compared with the undoped ZnO and 1 at.% Sn-doped ZnO thin films.
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Mehmet zkan, Mehmet zkan, and Sercen Sadik Erdem Sercen Sadik Erdem. "Silver Doped Zinc Oxide Thin Film Production by Thermionic Vacuum Arc (TVA) Technique." Journal of the chemical society of pakistan 43, no. 3 (2021): 253. http://dx.doi.org/10.52568/000581/jcsp/43.03.2021.
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In this paper, silver (Ag)doped Zinc Oxide(ZnO) thin films were prepared on glass and silicon substrate by using a thermionic vacuum arc technique. The surface, structural, optical characteristics of silver doped thin films have been examined by X-Ray diffractometer (XRD), field emission scanning emission electron microscopy (FESEM), atomic force microscopy (AFM), and UV-Visible spectrophotometer. As a result of these measurements, Ag, Zn and ZnO reflection planes were determined for thin films formed on Si and glass substrate. Nano crystallites have emerged in FESEM and AFM images. The produced films have low transparency. The optical band gap values were measured by photoluminescence devices at room temperature for thin films produced on silicon and glass substrate. The band gap values are very close to 3.10 eV for Ag doped ZnO thin films. The band gap of un-doped ZnO thin film is approximately 3.3 eV. It was identified that Ag doped changes the properties of the ZnO thin film.
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Mehmet zkan, Mehmet zkan, and Sercen Sadik Erdem Sercen Sadik Erdem. "Silver Doped Zinc Oxide Thin Film Production by Thermionic Vacuum Arc (TVA) Technique." Journal of the chemical society of pakistan 43, no. 3 (2021): 253. http://dx.doi.org/10.52568/000581.
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In this paper, silver (Ag)doped Zinc Oxide(ZnO) thin films were prepared on glass and silicon substrate by using a thermionic vacuum arc technique. The surface, structural, optical characteristics of silver doped thin films have been examined by X-Ray diffractometer (XRD), field emission scanning emission electron microscopy (FESEM), atomic force microscopy (AFM), and UV-Visible spectrophotometer. As a result of these measurements, Ag, Zn and ZnO reflection planes were determined for thin films formed on Si and glass substrate. Nano crystallites have emerged in FESEM and AFM images. The produced films have low transparency. The optical band gap values were measured by photoluminescence devices at room temperature for thin films produced on silicon and glass substrate. The band gap values are very close to 3.10 eV for Ag doped ZnO thin films. The band gap of un-doped ZnO thin film is approximately 3.3 eV. It was identified that Ag doped changes the properties of the ZnO thin film.
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Tsujimoto, H., H. Toratani, and Y. Deguti. "High Sensitive Thin Film Wattmeter Using Magnetic Thin Film." IEEE Transactions on Magnetics 44, no. 11 (November 2008): 3999–4002. http://dx.doi.org/10.1109/tmag.2008.2004618.
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Shao, Hong Yang, Kan Zhang, Yi Dan Zhang, Mao Wen, and Wei Tao Zheng. "NbN Thin Film of Alternating Textures." Materials Science Forum 898 (June 2017): 1431–37. http://dx.doi.org/10.4028/www.scientific.net/msf.898.1431.
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The δ-NbN thin films with different thickness have been prepared by reactive magnetron sputtering at different deposition time and exhibited alternating textures between (111) and (200) orientations as a function of thickness. In addition, the grain size, peak position, morphology, residual stress and orientation distributions of the deposited films were explored by X-ray diffraction, low-angel X-ray reflectivity, scanning electron microscopy and surface profiler. The film deposited at 300 s showed a (111) preferred orientation, changing to (200) preferred orientation at 600 s, and exhibited alternating textures between (111) and (200) preferred orientations. With further increasing deposition time, in which (200) peak position and the full width at half maximum of (111) peak also displayed a trend of alternating variation with varying deposition time. The intrinsic stress for δ-NbN films calculated by Stoney equation alternately changed with alternating textures, in which (111) orientation always takes place at relatively high intrinsic stress state and vice versa. Meanwhile, the film with (111) preferred orientation showed higher density than (200) preferred orientation. The film deposited at 4800 s owned a mixed texture of (111) and (200), showing an anisotropy distribution of (111)-oriented and (200)-oriented grains, while film deposited at 7200 s owned a strong (200) texture, displaying an isotropy distribution of (200)-oriented grains. The competitive growth between (111)-oriented and (200)-oriented grains was responsibility for alternating texture.
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Ishii, Tatsuya, Hideyuki Homma, and Shigeo Yamaguchi. "Fabrication of a Peltier Device Based on InSb and SbTe Thin Films." Advanced Materials Research 254 (May 2011): 50–53. http://dx.doi.org/10.4028/www.scientific.net/amr.254.50.
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We fabricated a thin film Peltier device based on an InSb film and a SbTe film. N-type InSb thin films were grown on sapphire (0001) substrate with InAsSb buffer layer by metalorganic vapor phase epitaxy, and P-type SbTe thin films were deposited on the substrate by electron beam evaporation. N-type and P-type films were separated on the substrate, and between them, a Au thin film was deposited by direct-current sputtering. We observed partial Peltier effect in the device.
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Tian, Caijuan, Jingjing Gao, Wei Li, Lianghuan Feng, Jingquan Zhang, and Lili Wu. "Thin Films with Low Zn Content Prepared by Chemical Bath Deposition." International Journal of Photoenergy 2012 (2012): 1–5. http://dx.doi.org/10.1155/2012/549382.
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Chemical bath deposition (CBD) was used for the growth of thin films with low Zn content. The influence of preparation conditions, such as pH, temperature, and concentration, on film properties was investigated. The chemical growth mechanism of thin films was analyzed, and optimized growth conditions for the thin films were established. The fill factor and short-circuit current were improved while was used to replace CdS as the window layer in CdTe solar cells.
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Lin, Qijing, Fuzheng Zhang, Na Zhao, and Ping Yang. "Influence of Annealing Temperature on Optical Properties of Sandwiched ZnO/Metal/ZnO Transparent Conductive Thin Films." Micromachines 13, no. 2 (February 13, 2022): 296. http://dx.doi.org/10.3390/mi13020296.
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Two sandwiched ZnO/Metal/ZnO transparent conductive thin films, 50nm ZnO/Cu/50nm ZnO (abbreviated as ZnO(Cu)) and 50nm ZnO/Ti/Cu/Ti/50nm ZnO (abbreviated as ZnO(Ti/Cu)) were deposited by magnetron sputtering technology. The comparative analysis of experiment results shows that the introduction of the Ti layer is beneficial to the overall properties of ZnO(Ti/Cu) thin film compared to ZnO(Cu) thin film with the same metal layer thickness. The effect of the annealing temperature on the performance of the two film systems was studied. Although the carrier concentration did not always increase with annealing temperature, the sheet resistances did decrease due to the obvious increase of mobility. The transmittance of ZnO(Cu) thin films increases with annealing temperature, while that of ZnO(Ti/Cu) films increases at first and then decreases. The optical band gap of ZnO(Cu) thin films increases with temperature, but is lower than that of ZnO(Ti/Cu) thin films, whose bandgap first increases with temperature and then decreases. The figure of merit of the ZnO(Ti/Cu) film is better than that of ZnO(Cu), which shows that the overall performance of ZnO(Ti/Cu) films is better, and annealing can improve the performance of the film systems.
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Baljon, Arlette R. C., and Mark O. Robbins. "Adhesion and Friction of Thin Films." MRS Bulletin 22, no. 1 (January 1997): 22–26. http://dx.doi.org/10.1557/s0883769400032292.
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Polymers are routinely placed between solid walls to provide lubrication or adhesion. Their function in these roles depends critically on the degree of dissipation within the polymer film and at the film/wall interface as the film shears or ruptures. Good lubrication is achieved by minimizing frictional dissipation while dissipation increases the strength of adhesive bonds.Gent and Schultz suggested a direct link between frictional losses and the adhesive performance of polymers. This correspondence has been supported by recent experiments and by some of the molecular-dynamics simulations to be described. However we find that the correspondence breaks down when the molecular motion producing dissipation occurs at different locations during shear and rupture. In the following sections, we discuss the types of rate-dependent dissipation observed in thin films and the different factors that control whether dissipation occurs within the polymer or at the wall/film interface. The results suggest an origin for interesting memory effects observed in surface-force-apparatus (SFA) experiments on thin films and expose the atomic-scale processes that produce dissipation during internal rupture of a thin film.
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Zhang, Weiguang, Jijun Li, Yongming Xing, Xiaomeng Nie, Fengchao Lang, Shiting Yang, Xiaohu Hou, and Chunwang Zhao. "Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation." Coatings 11, no. 1 (December 27, 2020): 23. http://dx.doi.org/10.3390/coatings11010023.
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SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.
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Balasundraprabhu, Rangasamy, E. V. Monakhov, N. Muthukumarasamy, and B. G. Svensson. "Studies on Nanostructure ITO Thin Films on Silicon Solar Cells." Advanced Materials Research 678 (March 2013): 365–68. http://dx.doi.org/10.4028/www.scientific.net/amr.678.365.
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Nanostructure ITO thin films have been deposited on well cleaned glass and silicon substrates using dc magnetron sputtering technique. The ITO films are post annealed in air using a normal heater setup in the temperature range 100 - 400 °C. The ITO film annealed at 300°C exhibited optimum transparency and resistivity values for device applications. The thickness of the ITO thin films is determined using DEKTAK stylus profilometer. The sheet resistance and resistivity of the ITO films were determined using four probe technique. Finally, the optimized nanostructure ITO layers are incorporated on silicon solar cells and the efficiency of the solar cell are found to be in the range 12-14%. Other solar cell parameters such as fill factor(FF), open circuit voltage(Voc),Short circuit current(Isc), series resistance(Rs) and shunt resistance(Rsh) have been determined. The effect of ITO film thickness on silicon solar cells is also observed.
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Takao, Hanabusa, Kazuya Kusaka, Kenta Kaneko, Osamu Sakata, and Nishida Masayuki. "Stress-Assisted Atomic Migration in Thin Copper Films." Key Engineering Materials 353-358 (September 2007): 671–74. http://dx.doi.org/10.4028/www.scientific.net/kem.353-358.671.
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Stress-assisted atomic migration occurs in thin films due to thermal stress development, followed by hillock and void formation on a film surface. Relation between thermal stresses and hillock formation was investigated on copper films with and without passivation layer. Copper films with a thickness of 10, 50 and 100 nm on oxidized silicon wafer were prepared for investigating thermal stress and hillock formation. In-situ thermal stress observation by X-ray measurement revealed that compressive stresses develop in an early stage of heating followed by a sudden decrease in the temperature region between 100 and 200 deg. In a cooling stage, stresses in a film linearly changed with decreasing temperature to form a tensile residual stress state. Surface morphology is observed by optical microscope and SEM after the heat cycle as well as at elevated temperatures in a vacuum chamber. Dome-like swells were formed on an AlN passivation layer. Almost of all of the swells on 100 nm thick film collapsed after the heat treatment up to 350 deg whereas the swells on 10 nm thick film had no collapse excepting a few case. Comparing with the film without passivation, the swell is considered to be the result of atomic migration of copper film to form hillocks in the interface between copper film and AlN passivation film during heating. Atoms are considered to migrate reversibly into the copper film in the cooling stage, resulting to make vacant hall in the swell of AlN film and then collapse due to tensile stress development.
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Geremew, Temesgen. "Thin Film Deposition and Characterization Techniques." Journal of 3D Printing and Applications 1, no. 2 (April 7, 2022): 1–24. http://dx.doi.org/10.14302/issn.2831-8846.j3dpa-22-4066.
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Thin films are everywhere in the modern world, with many of the technologies we depend upon in daily life being, in turn, dependent upon thin film technology. Chemical bath deposition includes principles of chemical bath deposition (CBD) and concept of solubility product, nucleation and film growth, thin film deposition mechanism in chemical bath deposition. The non-metallic ion source (anions) and metal ion source (cations) then react to form the compound. The nucleation process plays an important role in determining the crystallinity and microstructure of the resultant film. From the discussion of deposition techniques which are physical and chemical deposition methods. Physical deposition techniques contains sputtering deposition, electron beam evaporation and physical vapour deposition (PVD) process have been known for over 100 years and also fabrication films on the substrate, as well as the increasement of the pressure in the chamber due to operation of the sources indicates directly that gases or vapors are desorbed. Chemical deposition process is economically effective and has been industrially exploited to large scale. It can be summarized that thin film characterization techniques include X-ray diffraction (XRD), UV-Vis spectrophotometer, scanning electron microscopy, energy dispersive x-ray diffraction, transmission electron microscopy (TEM). X-rays diffraction (XRD) is a rapid and a powerful technique used to study the phase of a crystalline material, information on unit cell lattice parameters, crystal structure, crystal orientation and crystalline size.
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Jimeénez, R., A. Gonzaález, M. L. Calzada, and J. Mendiola. "Study of electrolytic laminated ferroelectric thin films from electroded substrates." Journal of Materials Research 15, no. 5 (May 2000): 1041–44. http://dx.doi.org/10.1557/jmr.2000.0148.
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An electrolytic process is described to peel off ferroelectric thin films from electroded substrates. This procedure was used to study the evolution of stress in ferroelectric calcium-modified lead titanate thin films. Stresses developed during the different steps of the preparation of the film on the substrate were calculated from curvature radii of the deposited films after each step. During the film preparation, the substrate was permanently deformed by the generated stresses. This was shown by curvature of the substrate after the electrolytic separation of the film. The laminated film liberated a large amount of stresses, as deduced from the lattice parameters of the deposited and laminated film, obtained by x-ray diffraction. The moderate residual stress that the laminated film maintained could be associated with intrinsic defects of the film.
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Hwang, Young Kyu, Ajit Singh Mamman, K. R. Patil, Lee Kyung Kim, Jin Soo Hwang, and Jong San Chang. "Reflectometry Studies of Mesoporous Silica Thin Films." Solid State Phenomena 135 (February 2008): 31–34. http://dx.doi.org/10.4028/www.scientific.net/ssp.135.31.
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Reflectometry technique has been successfully applied to investigate the correlation between the porosity and optical property (refractive index) of the ordered mesoporous thin film deposited on silicon wafer substrates. The measured optical spectra were simulated by the Effective Medium approximation model. The reflectometry technique has been found to be appropriate for the measurement of thickness of thin films as well as thick layer films. The mesoporous silica films prepared from tri-block copolymer (F-127) as a surfactant and polypropylene oxide as a swelling agent were subsequently exposed to the ammonia vapors to enhance thermal stability and shrinkage minimization of the film that results in increased film thickness.