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Journal articles on the topic 'Thin film thermal conductivity measurement'

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Author: Grafiati

Published: 10 December 2022

Last updated: 29 January 2023

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1

Shaw-Klein, L. J., T. K. Hatwar, S. J. Burns, S. D. Jacobs, and J. C. Lambropoulos. "Anisotropic thermal conductivity of rare earth–transition metal thin films." Journal of Materials Research 7, no. 2 (February 1992): 329–34. http://dx.doi.org/10.1557/jmr.1992.0329.

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Thermal conductivity measurements were performed on several amorphous rare earth transition metal thin films of varying microstructure. The thermal conductivity perpendicular to the plane of the film, measured by the thermal comparator method, was compared with the thermal conductivity value measured parallel to the plane of the film. The latter value was obtained by converting electrical conductivity values to thermal conductivity via the Wiedemann–Franz relationship. As expected, the columnar microstructure induced during the sputter deposition of the thin films causes an anisotropy in the thermal conductivity values, with the in-plane values consistently lower than the out-of-plane values. The effect is most pronounced for the more columnar films deposited at higher pressure, for which the in-plane thermal conductivity, 0.3 W/mK, is an order of magnitude lower than the out-of-plane thermal conductivity, 4.3 W/mK. The thermal conductivity out of the plane of the film decreased with increasing deposition pressure, due to the decreasing film density.

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2

Moon, Seung Jae. "Determination of Thermal Conductivity of Amorphous Silicon Thin Films via Non-Contacting Optical Probing." Key Engineering Materials 326-328 (December 2006): 689–92. http://dx.doi.org/10.4028/www.scientific.net/kem.326-328.689.

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The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.

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3

Alajlouni, Sami, David Alberto Lara Ramos, Kerry Maize, Nicolás Pérez, Kornelius Nielsch, Gabi Schierning, and Ali Shakouri. "Estimating thin-film thermal conductivity by optical pump thermoreflectance imaging and finite element analysis." Journal of Applied Physics 131, no. 18 (May 14, 2022): 185111. http://dx.doi.org/10.1063/5.0084566.

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We introduce a noncontact experiment method to estimate thermal conductivity of nanoscale thin films by fitting high spatial resolution thermoreflectance images of surface spot heating to a finite element simulated temperature distribution. The thin-film top surface is heated by a [Formula: see text]m diameter focused, 825 nm wavelength laser spot. The surface temperature distribution in the excited sample is imaged by thermoreflectance microscopy with submicrometer spatial resolution and up to 10 mK temperature resolution. Thin-film thermal conductivity is extracted by fitting a measured surface temperature distribution to a 3D finite element temperature model. The method is demonstrated by estimating thermal conductivity for an isotropic thin-film metal (nickel, 60–260 nm) on a glass substrate. The fitted Ni thermal conductivity was 50 ± 5 W/m K, which is in good agreement with the literature. Also, we present a detailed finite element analysis for an anisotropic thin-film semiconductor sample to show how the method could be extended to estimate thermal conductivity of anisotropic thin films. Advantages of the new method are easy sample preparation (no top surface transducer film or integrated heater required), rapid in situ measurement, and application to a broad range of thin-film materials.

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4

Wang, Xinwei, Hanping Hu, and Xianfan Xu. "Photo-Acoustic Measurement of Thermal Conductivity of Thin Films and Bulk Materials." Journal of Heat Transfer 123, no. 1 (June 25, 2000): 138–44. http://dx.doi.org/10.1115/1.1337652.

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The photoacoustic (PA) technique is one of many techniques for measuring thermal conductivity of thin films. Compared with other techniques for thermal conductivity measurement, the photoacoustic method is relatively simple, yet is able to provide accurate thermal conductivity data for many types of thin films and bulk materials. In this work, the PA measurement in a high frequency range is made possible by a newly developed PA apparatus, which extends the limit of the PA technique. Thermal conductivities of SiO2 with thicknesses from 0.05 to 0.5 μm on Si wafer, e-beam evaporated thin nickel film on Si wafer, and thermal barrier coatings are obtained. In addition to the commonly used phase shift fitting, which is only appropriate for thermally-thin films, an amplitude fitting method is developed and employed for measuring both thin films and bulk materials with smooth or rough surfaces. Comparing results by amplitude fitting to those obtained by other methods and reference values shows good agreements. Applications and limitations of the photoacoustic technique are discussed.

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5

Zeng, J. S. Q., P. C. Stevens, A. J. Hunt, R. Grief, and Daehee Lee. "Thin-film-heater thermal conductivity apparatus and measurement of thermal conductivity of silica aerogel." International Journal of Heat and Mass Transfer 39, no. 11 (July 1996): 2311–17. http://dx.doi.org/10.1016/0017-9310(95)00307-x.

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6

Chu, Dachen, Maxat Touzelbaev, Kenneth E. Goodson, Sergey Babin, and R. Fabian Pease. "Thermal conductivity measurements of thin-film resist." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 19, no. 6 (2001): 2874. http://dx.doi.org/10.1116/1.1421557.

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7

Chien, Heng-Chieh, Da-Jeng Yao, Mei-Jiau Huang, and Tien-Yao Chang. "Thermal conductivity measurement and interface thermal resistance estimation using SiO2 thin film." Review of Scientific Instruments 79, no. 5 (May 2008): 054902. http://dx.doi.org/10.1063/1.2927253.

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8

Indermuehle, S. W., and R. B. Peterson. "A Phase-Sensitive Technique for the Thermal Characterization of Dielectric Thin Films." Journal of Heat Transfer 121, no. 3 (August 1, 1999): 528–36. http://dx.doi.org/10.1115/1.2826013.

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A phase-sensitive measurement technique for determining two independent thermal properties of a thin dielectric film is presented. The technique involves measuring a specimen’s front surface temperature response to a periodic heating signal over a range of frequencies. The phase shift of the temperature response is fit to an analytical model using thermal diffusivity and effusivity as fitting parameters, from which the thermal conductivity and specific heat can be calculated. The method has been applied to 1.72-μm thick films of SiO2 thermally grown on a silicon substrate. Thermal properties were obtained through a temperature range from 25°C to 300°C. One interesting outcome stemming from analysis of the experimental data is the ability to extract both thermal conductivity and specific heat of a thin film from phase information alone. The properties obtained with this method are slightly below the bulk values for fused silica with a measured room temperature (25°C) thermal conductivity of 1.28 ± 0.12 W/m-K.

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9

Makarova, E. S., and A. V. Novotelnova. "Estimating the uncertainty of measurements of thermal conductivity of thin films of thermoelectrics with the 3-omega method." Journal of Physics: Conference Series 2057, no. 1 (October 1, 2021): 012108. http://dx.doi.org/10.1088/1742-6596/2057/1/012108.

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Abstract Using the method of computer simulation, the uncertainty of measurements of the thermal conductivity of silicon, which is often used as substrates, and also thin films based on bismuth, is estimated. The influence of the application of an additional dielectric layer between the thermoelectric film and the resistive heater on the measurement results is shown.

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10

Allmaras, J. P., A. G. Kozorezov, A. D. Beyer, F. Marsili, R. M. Briggs, and M. D. Shaw. "Thin-Film Thermal Conductivity Measurements Using Superconducting Nanowires." Journal of Low Temperature Physics 193, no. 3-4 (July 24, 2018): 380–86. http://dx.doi.org/10.1007/s10909-018-2022-0.

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11

Bauer, M. L., C. M. Bauer, M. C. Fish, R. E. Matthews, G. T. Garner, A. W. Litchenberger, and P. M. Norris. "Thin-film aerogel thermal conductivity measurements via 3ω." Journal of Non-Crystalline Solids 357, no. 15 (July 2011): 2960–65. http://dx.doi.org/10.1016/j.jnoncrysol.2011.03.042.

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12

Forsythe, Carlos, Madeleine P. Gordon, and Jeffrey J. Urban. "3ω techniques for measurement of volumetric heat capacity and anisotropic thermal conductivity of a solution processable, hybrid organic/inorganic film, Te-PEDOT:PSS." Journal of Applied Physics 131, no. 10 (March 14, 2022): 105109. http://dx.doi.org/10.1063/5.0079328.

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Measuring the thermal properties of anisotropic films of hybrid materials poses a challenge to existing metrology techniques. We have developed a new approach for measuring the volumetric heat capacity and anisotropic thermal conductivity of these systems using the 3ω method. While there exist many avenues for measuring the thermal properties of thin films, most carry with them difficult requirements such as smooth surfaces or advanced lithography. Here, we present measurements of a film's in-plane and cross-plane conductance and its volumetric heat capacity using relatively simple sample configurations, each requiring a single heater. For the measurement of volumetric heat capacity, we present a new model fitting method, relying on a standard film-on-substrate configuration. For the measurement of in-plane thermal conductance by 3ω, we have developed the use of an embedded micro-wire heater in suspended drop cast films, allowing for a 12 μm wide heater without the need for advanced lithography. We also expose the surprisingly significant effect of thermal radiation in the suspended film measurement and its associated error. Our measurements reveal a large anisotropy in the thermal conductivity of our test material, Te-PEDOT:PSS, of kin-plane/ kcross-plane = 19, consistent with the nanoscale morphology of the material.

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13

Lee, Byeonghee, Joon Sik Lee, Sun Ung Kim, Kyeongtae Kim, Ohmyoung Kwon, Seungkoo Lee, Jong Hoon Kim, and Dae Soon Lim. "Simultaneous measurement of thermal conductivity and interface thermal conductance of diamond thin film." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 27, no. 6 (2009): 2408. http://dx.doi.org/10.1116/1.3259911.

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14

Kim, Kyeongtae, and Ohmyoung Kwon. "Thermal conductivity measurement of Ge2Sb2Te5 thin film using improved 3ω method." High Temperatures-High Pressures 48, no. 1-2 (2019): 71. http://dx.doi.org/10.32908/hthp.v48.696.

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15

Huang, Shuo, Xiaodong Ruan, Jun Zou, Xin Fu, and Huayong Yang. "Raman Scattering Characterization of Transparent Thin Film for Thermal Conductivity Measurement." Journal of Thermophysics and Heat Transfer 23, no. 3 (July 2009): 616–21. http://dx.doi.org/10.2514/1.40976.

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16

Ruoho, Mikko, Kjetil Valset, Terje Finstad, and Ilkka Tittonen. "Measurement of thin film thermal conductivity using the laser flash method." Nanotechnology 26, no. 19 (April 22, 2015): 195706. http://dx.doi.org/10.1088/0957-4484/26/19/195706.

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17

Okamoto, Yoichi, Junichi Saeki, Tetsunari Ohtsuki, and Hiroaki Takiguchi. "Thermal Conductivity Measurement of Si/(Ge+Au) Artificial Superlattice Thin Film." Applied Physics Express 1 (October 17, 2008): 117001. http://dx.doi.org/10.1143/apex.1.117001.

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18

Choi, Sun Rock, Dong Sik Kim, and Sung Hoon Choa. "Thermal Transport Properties of Various Thin Films for MEMS Applications." Key Engineering Materials 326-328 (December 2006): 293–96. http://dx.doi.org/10.4028/www.scientific.net/kem.326-328.293.

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The thermal properties of thin films, such as thermal conductivity and diffusivity, are important in design and analysis of MEMS (micro electro mechanical systems), particularly in microscale thermal systems and high-power electronic/optoelectronic devices. In the present study, the thermal conductivity and diffusivity of a variety of thin film materials, which are commonly used in MEMS applications, are measured. The samples include Au, Sn, Mo, Al/Ti alloy, AlN, and SiC. The Au sample is deposited by the e-beam evaporation technique while the rest of the metallic samples are deposited by sputtering processes. The AlN and SiC films are also prepared by sputtering processes. In the experiment, the thermal diffusivities of metallic thin films are measured by two independent methods — the AC calorimetric method and photothermal mirage technique. The thermal conductivities of dielectric thin films are measured by the 3 omega technique. The results show that the thermal transport properties of some of the films are significantly smaller than those of the same material in bulk form. Especially, the AlN and SiC thin films exhibit pronounced thermal conductivity reduction because of the size effect. The electrical conductivities of the metallic thin films are measured as well. The results for Au and Sn are consistent with the thermal conductivity, confirming the Wiedmann-Franz law. However, Al/Ti and Mo thin films show considerable deviation from the law. The results are analyzed based on the XRD (X-Ray diffraction) and AFM (Atomic Force Microscope) measurement.

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19

Latronico, Giovanna, Saurabh Singh, Paolo Mele, Abdalla Darwish, Sergey Sarkisov, Sian Wei Pan, Yukihiro Kawamura, et al. "Synthesis and Characterization of Al- and SnO2-Doped ZnO Thermoelectric Thin Films." Materials 14, no. 22 (November 16, 2021): 6929. http://dx.doi.org/10.3390/ma14226929.

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The effect of SnO2 addition (0, 1, 2, 4 wt.%) on thermoelectric properties of c-axis oriented Al-doped ZnO thin films (AZO) fabricated by pulsed laser deposition on silica and Al2O3 substrates was investigated. The best thermoelectric performance was obtained on the AZO + 2% SnO2 thin film grown on silica, with a power factor (PF) of 211.8 μW/m·K2 at 573 K and a room-temperature (300 K) thermal conductivity of 8.56 W/m·K. PF was of the same order of magnitude as the value reported for typical AZO bulk material at the same measurement conditions (340 μW/m·K2) while thermal conductivity κ was reduced about four times.

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20

Kim, Gwantaek, Moojoong Kim, and Hyunjung Kim. "Feasibility of Novel Rear-Side Mirage Deflection Method for Thermal Conductivity Measurements." Sensors 21, no. 17 (September 6, 2021): 5971. http://dx.doi.org/10.3390/s21175971.

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Among the noncontact measurement technologies used to acquire thermal property information, those that use the photothermal effect are attracting attention. However, it is difficult to perform measurements for new materials with different optical and thermal properties, owing to limitations of existing thermal conductivity measurement methods using the photothermal effect. To address this problem, this study aimed to develop a rear-side mirage deflection method capable of measuring thermal conductivity regardless of the material characteristics based on the photothermal effect. A thin copper film (of 20 µm thickness) was formed on the surfaces of the target materials so that measurements could not be affected by the characteristics of the target materials. In addition, phase delay signals were acquired from the rear sides of the target materials to exclude the influence of the pump beam, which is a problem in existing thermal conductivity measurement methods that use the photothermal effect. To verify the feasibility of the proposed measurement technique, thermal conductivity was measured for copper, aluminum, and stainless steel samples with a 250 µm thickness. The results were compared with literature values and showed good agreement with relative errors equal to or less than 0.2%.

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21

Yamaguchi, Shingi, Takuma Shiga, Shun Ishioka, Tsuguyuki Saito, Takashi Kodama, and Junichiro Shiomi. "Anisotropic thermal conductivity measurement of organic thin film with bidirectional 3ω method." Review of Scientific Instruments 92, no. 3 (March 1, 2021): 034902. http://dx.doi.org/10.1063/5.0030982.

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22

Yang, Liangliang, Jiangtao Wei, Yuanhao Qin, Lei Wei, Peishuai Song, Mingliang Zhang, Fuhua Yang, and Xiaodong Wang. "Thermoelectric Properties of Cu2Se Nano-Thin Film by Magnetron Sputtering." Materials 14, no. 8 (April 20, 2021): 2075. http://dx.doi.org/10.3390/ma14082075.

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Thermoelectric technology can achieve mutual conversion between thermoelectricity and has the unique advantages of quiet operation, zero emissions and long life, all of which can help overcome the energy crisis. However, the large-scale application of thermoelectric technology is limited by its lower thermoelectric performance factor (ZT). The thermoelectric performance factor is a function of the Seebeck coefficient, electrical conductivity, thermal conductivity and absolute temperature. Since these parameters are interdependent, increasing the ZT value has always been a challenge. Here, we report the growth of Cu2Se thin films with a thickness of around 100 nm by magnetron sputtering. XRD and TEM analysis shows that the film is low-temperature α-Cu2Se, XPS analysis shows that about 10% of the film’s surface is oxidized, and the ratio of copper to selenium is 2.26:1. In the range of 300–400 K, the maximum conductivity of the film is 4.55 × 105 S m−1, which is the maximum value reached by the current Cu2Se film. The corresponding Seebeck coefficient is between 15 and 30 µV K−1, and the maximum ZT value is 0.073. This work systematically studies the characterization of thin films and the measurement of thermoelectric properties and lays the foundation for further research on nano-thin-film thermoelectrics.

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23

Chen, Qiyu, Fabian Javier Medina, Sien Wang, and Qing Hao. "In-plane thermal conductivity measurements of Si thin films under a uniaxial tensile strain." Journal of Applied Physics 133, no. 3 (January 21, 2023): 035103. http://dx.doi.org/10.1063/5.0125422.

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At the atomic level, heat is viewed as energy for lattice vibrational waves, i.e., a mechanical wave. Correspondingly, the strain as atomic displacement can have a profound impact on the thermal transport. Despite numerous atomistic simulations, fewer experimental efforts can be found for strain-dependent thermal properties of individual nanostructures and thin films. In this work, suspended 2 μm-thick Si films were stretched to reveal the influence of the uniaxial tensile strain on in-plane thermal conductivity along the stretching direction. In a high vacuum, the room-temperature thermal conductivity of a 2 μm-thick Si film decreased from 135.5 ± 6.9 to 127.2 ± 6.5 W/m K under a ∼0.44% tensile strain. This thermal conductivity decrease followed the predicted trend for Si films. In addition, the heat transfer coefficient of representative thin films in the air was also measured to reveal the impact of the heat loss along the sample sidewall on previous in-air thermal measurements.

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24

Islam, Mohammad Aminul, Yasmin Abdu Wahab, Mayeen Uddin Khandaker, Abdullah Alsubaie, Abdulraheem S. A. Almalki, David A. Bradley, and Nowshad Amin. "High Mobility Reactive Sputtered CuxO Thin Film for Highly Efficient and Stable Perovskite Solar Cells." Crystals 11, no. 4 (April 7, 2021): 389. http://dx.doi.org/10.3390/cryst11040389.

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Copper oxide (CuxO) films are considered to be an attractive hole-transporting material (HTM) in the inverted planar heterojunction perovskite solar cells due to their unique optoelectronic properties, including intrinsic p-type conductivity, high mobility, low-thermal emittance, and energy band level matching with the perovskite (PS) material. In this study, the potential of reactive sputtered CuxO thin films with a thickness of around 100 nm has been extensively investigated as a promising HTM for effective and stable perovskite solar cells. The as-deposited and annealed films have been characterized by using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Photoluminescence (PL), UV-Vis spectroscopy, and Hall-effect measurement techniques. The significant change in structural and optoelectronic properties has been observed as an impact of the thermal annealing process. The phase conversion from Cu2O to CuO, including grain size increment, was observed upon thermal annealing. The transmittance and optical bandgap were found to vary with the films’ crystallographic transformation. The predominant p-type conductivity and optimum annealing time for higher mobility have been confirmed from the Hall measurement. Films’ optoelectrical properties were implemented in the complete perovskite solar cell for numerical analysis. The simulation results show that a 40 min annealed CuxO film yields the highest efficiency of 22.56% with a maximum open-circuit voltage of 1.06 V.

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25

Wang, Haitao, Yibin Xu, Masahiro Goto, Yoshihisa Tanaka, Masayoshi Yamazaki, Akira Kasahara, and Masahiro Tosa. "Thermal Conductivity Measurement of Tungsten Oxide Nanoscale Thin Films." MATERIALS TRANSACTIONS 47, no. 8 (2006): 1894–97. http://dx.doi.org/10.2320/matertrans.47.1894.

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26

Kim, In-Goo, Eun-Ji Oh, Yong-Soo Kim, Sok-Won Kim, In-Sung Park, and Won-Kyu Lee. "Thermal Conductivity Measurement of High-k Oxide Thin Films." Journal of the Korean Vacuum Society 19, no. 2 (March 30, 2010): 141–47. http://dx.doi.org/10.5757/jkvs.2010.19.2.141.

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27

Gubler, Ulrich, Matthias Raunhardt, and Andrin Stump. "Measurement technique for thermal conductivity of thin polymer films." Thin Solid Films 515, no. 4 (December 2006): 1737–40. http://dx.doi.org/10.1016/j.tsf.2006.06.019.

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28

Chen, Zhen, Juekuan Yang, Ping Zhuang, Minhua Chen, Jian Zhu, and Yunfei Chen. "Thermal conductivity measurement of InGaAs/InGaAsP superlattice thin films." Chinese Science Bulletin 51, no. 23 (December 2006): 2931–36. http://dx.doi.org/10.1007/s11434-006-2208-8.

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29

Meinders, Erwin R. "Measurement of the thermal conductivity of thin layers using a scanning thermal microscope." Journal of Materials Research 16, no. 9 (September 2001): 2530–43. http://dx.doi.org/10.1557/jmr.2001.0347.

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A scanning thermal microscope (SThM) was used to measure the thermal conductivity of thin sputter-deposited films in the thickness range of 10 nm–10 μm. The SThM method is based on a heated tip that is scanned across the surface of a sample. The heat flowing into the sample is correlated to the local thermal conductivity of the sample. Issues like the contact force, the surface roughness of the sample, and tip degradation, which determine to a great extent the contact area between tip and surface, and thus the heat flow to the sample, are addressed in the paper. A calibration curve was measured from known reference materials to quantify the sample heat flow. This calibration was used to determine the effective thermal conductivity of samples. Further, the heat diffusion through a layered sample due to a surface heat source was analyzed with an analytical and numerical model. Measurements were performed with films of aluminum, ZnS–SiO2, and GeSbTe phase change material of variable thickness and sputter-deposited on substrates of glass, silicon, or polycarbonate. It is shown in the paper that the SThM is a suitable tool to visualize relative differences in thermal structure of nanometer resolution. Determination of the thermal conductivity of thin layers is possible for layers in the micrometer range. It is concluded that the SThM is not sensitive enough to measure accurately the thermal conductivity of thin films in the nanometer range. Suggestions for improvement of the SThM method are given.

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30

J. L. Hostetler, A. N. Smith, and P. "THIN-FILM THERMAL CONDUCTIVITY AND THICKNESS MEASUREMENTS USING PICOSECOND ULTRASONICS." Microscale Thermophysical Engineering 1, no. 3 (July 1997): 237–44. http://dx.doi.org/10.1080/108939597200250.

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31

Miyake, Shugo, Genzou Matsui, Hiromichi Ohta, Kimihito Hatori, Kohei Taguchi, and Suguru Yamamoto. "Wide-range measurement of thermal effusivity using molybdenum thin film with low thermal conductivity for thermal microscopes." Measurement Science and Technology 28, no. 7 (June 19, 2017): 075006. http://dx.doi.org/10.1088/1361-6501/aa72d0.

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32

HAGINO, Harutoshi, Yosuke KAWAHARA, Aimi GOTO, Toru HIWADA, and Koji Miyazaki. "411 In-Plane Thermal Conductivity and Electrical Conductivity Measurements of Silicon Thin Film." Proceedings of Conference of Kyushu Branch 2012.65 (2012): 139–40. http://dx.doi.org/10.1299/jsmekyushu.2012.65.139.

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33

Aleksandrova, Mariya, Ivailo Pandiev, and Ajaya Kumar Singh. "Implementation of 3ω Method for Studying the Thermal Conductivity of Perovskite Thin Films." Crystals 12, no. 10 (September 20, 2022): 1326. http://dx.doi.org/10.3390/cryst12101326.

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In this paper, an approach for precise determination of the thermal conductivity of novel lead-free perovskite thin films by 3ω method, realized with a field programmable analog array circuit, is presented. The objective of the work is to study the relation between the thermal conductivity of the photoelectric perovskites and the thermal stability of the solar cells, in which they are incorporated. It is found that the solar cells’ long-term stability under different exploitation conditions, such as continuous illumination and elevated temperatures, is affected to a different extent, according to the thermal conductivity. The developed setup for implementation of the 3ω method is adapted for thin-film samples and can be applied to all layers involved in the solar cell, thus defining their individual contribution to the overall device thermal degradation. According to the conducted measurements, the coefficients of thermal conductivity for the novel materials are as follows: for the iodine-based perovskite film, it is 0.14 W/mK and for the chlorine-based perovskite film, it is 0.084 W/mK. As a result, the thermal instability and degradation rate at continuous illumination are, respectively, 10.6% and 200 nV/min for the iodine-based perovskite solar cell, and 6.5% and 20 nV/min for the chlorine-based cell. At elevated temperatures up to 54 °C, the corresponding instability values are 15 µV/°C with a degradation rate of an average of 2.2 µV/min for the cell with iodine-containing perovskite and 300 nV/°C with a degradation rate of 66 nV/min for the cell with chlorine-containing perovskite.

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34

Le Thi, Hao, Shambel Abate Marye, and Niall Tumilty. "AC conductivity of hBN thin film on Si(111): A high temperature study." Journal of Applied Physics 132, no. 19 (November 21, 2022): 195101. http://dx.doi.org/10.1063/5.0121443.

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Boron nitride (BN) is a layered two-dimensional insulator with excellent chemical, thermal, mechanical, and optical properties. We present a comprehensive characterization of hBN as a dielectric thin film using a high impedance measurement system (100 T Ω ) to reveal the AC conductivity and dielectric properties of reactively RF sputtered 200 nm thick films to 480 °C. The experimental results are analyzed with reference to various theoretical models proposed for electrical conduction in disordered or amorphous semiconductors. Electrical measurements indicate that the mechanism behind hBN AC conductivity is via correlated barrier hopping (CBH) and is assigned to localized states at the Fermi level, where N(EF) ∼ 1018 eV−1 cm−3. Our measurements also reveal a [Formula: see text] component, with resistance reducing from ∼1010 Ω (50 °C) to 3 × 108 Ω (480 °C). Single RC parallel circuit fits to Cole–Cole plots are achieved signifying a sole conduction path with capacitance values of ∼8 × 10−11 F. These findings may be of interest to material and device scientists and could open new pathways for hBN both as a dielectric material encapsulant and for semiconductor device applications including high-temperature operation.

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35

Kim, Hojun, Daeyoon Kim, Nagyeong Lee, Yurim Lee, Kwangbae Kim, and Ohsung Song. "Measurement of the Thermal Conductivity of a Polycrystalline Diamond Thin Film via Light Source Thermal Analysis." Korean Journal of Materials Research 31, no. 12 (December 30, 2021): 665–71. http://dx.doi.org/10.3740/mrsk.2021.31.12.665.

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36

FUTSUTA, Akihiro, and Hajime NAKAMURA. "GS0608 Measurement of Thermal Conductivity of Low Thermal Resistance Thin Film by Guarded Hot Plate Method." Proceedings of Conference of Kanto Branch 2016.22 (2016): _GS0608–1_—_GS0608–2_. http://dx.doi.org/10.1299/jsmekanto.2016.22._gs0608-1_.

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Thuau, D., I. Koymen, and R. Cheung. "A microstructure for thermal conductivity measurement of conductive thin films." Microelectronic Engineering 88, no. 8 (August 2011): 2408–12. http://dx.doi.org/10.1016/j.mee.2010.12.119.

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Yang, Junyou, Jiansheng Zhang, Hui Zhang, and Yunfeng Zhu. "Thermal conductivity measurement of thin films by a dc method." Review of Scientific Instruments 81, no. 11 (November 2010): 114902. http://dx.doi.org/10.1063/1.3481787.

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Kühnel, Fabian, Christoph Metzke, Jonas Weber, Josef Schätz, Georg S. Duesberg, and Günther Benstetter. "Investigation of Heater Structures for Thermal Conductivity Measurements of SiO2 and Al2O3 Thin Films Using the 3-Omega Method." Nanomaterials 12, no. 11 (June 4, 2022): 1928. http://dx.doi.org/10.3390/nano12111928.

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A well-known method for measuring thermal conductivity is the 3-Omega (3ω) method. A prerequisite for it is the deposition of a metal heater on top of the sample surface. The known design rules for the heater geometry, however, are not yet sufficient. In this work, heaters with different lengths and widths within the known restrictions were investigated. The measurements were carried out on SiO2 thin films with different film thicknesses as a reference. There was a significant difference between theoretical deposited heater width and real heater width, which could lead to errors of up to 50% for the determined thermal conductivity. Heaters with lengths between 11 and 13 mm and widths of 6.5 µm or more proved to deliver the most trustworthy results. To verify the performance of these newfound heaters, additional investigations on Al2O3 thin films were carried out, proving our conclusions to be correct and delivering thermal conductivity values of 0.81 Wm−1 K−1 and 0.93 Wm−1 K−1 for unannealed and annealed samples, respectively. Furthermore, the effect of annealing on Al2O3 was studied, revealing a significant shrinking in film thickness of approximately 11% and an increase in thermal conductivity of 15%. The presented results on well-defined geometries will help to produce optimized heater structures for the 3ω method.

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Rausch, S., D. Rauh, C. Deibel, S. Vidi, and H. P. Ebert. "Thin-Film Thermal-Conductivity Measurement on Semi-Conducting Polymer Material Using the 3ω Technique." International Journal of Thermophysics 34, no. 5 (March 7, 2012): 820–30. http://dx.doi.org/10.1007/s10765-012-1174-4.

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Ashraf, Forsberg, Mattsson, and Thungström. "Thermoelectric Properties of n-Type Molybdenum Disulfide (MoS2) Thin Film by Using a Simple Measurement Method." Materials 12, no. 21 (October 26, 2019): 3521. http://dx.doi.org/10.3390/ma12213521.

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In this paper, a micrometre thin film of molybdenum disulfide (MoS2) is characterized for thermoelectric properties. The sample was prepared through mechanical exfoliation of a molybdenite crystal. The Seebeck coefficient measurement was performed by generating a temperature gradient across the sample and recording the induced electrical voltage, and for this purpose a simple measurement setup was developed. In the measurement, platinum was utilized as reference material in the electrodes. The Seebeck value of MoS2 was estimated to be approximately −600 µV/K at a temperature difference of 40 °C. The negative sign indicates that the polarity of the material is n-type. For measurement of the thermal conductivity, the sample was sandwiched between the heat source and the heat sink, and a steady-state power of 1.42 W was provided while monitoring the temperature difference across the sample. Based on Fourier’s law of conduction, the thermal conductivity of the sample was estimated to be approximately 0.26 Wm-1 K-1. The electrical resistivity was estimated to be 29 Ω cm. The figure of merit of MoS2 was estimated to be 1.99 × 10-4.

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Yang, Seunggen, Kyoungah Cho, and Sangsig Kim. "Enhanced Thermoelectric Characteristics of Ag2Se Nanoparticle Thin Films by Embedding Silicon Nanowires." Energies 13, no. 12 (June 13, 2020): 3072. http://dx.doi.org/10.3390/en13123072.

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A solution-processable Ag2Se nanoparticle thin film (NPTF) is a prospective thermoelectric material for plastic-based thermoelectric generators, but its low electrical conductivity hinders the fabrication of high performance plastic-based thermoelectric generators. In this study, we design Ag2Se NPTFs embedded with silicon nanowires (SiNWs) to improve their thermoelectric characteristics. The Seebeck coefficients are −233 and −240 µV/K, respectively, for a Ag2Se NPTF alone and a Ag2Se NPTF embedded with SiNWs. For the Ag2Se NPTF embedded with SiNWs, the electrical conductivity is improved from 0.15 to 18.5 S/m with the embedment of SiNWs. The thermal conductivities are determined by a lateral thermal conductivity measurement for nanomaterials and the thermal conductivities are 0.62 and 0.84 W/(m·K) for a Ag2Se NPTF alone and a Ag2Se NPTF embedded with SiNWs, respectively. Due to the significant increase in the electrical conductivity and the insignificant increase in its thermal conductivity, the output power of the Ag2Se NPTF embedded with SiNWs is 120 times greater than that of the Ag2Se NPTF alone. Our results demonstrate that the Ag2Se NPTF embedded with SiNWs is a prospective thermoelectric material for high performance plastic-based thermoelectric generators.

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Król, Danuta, Przemysław Motyl, Joanna Piotrowska-Woroniak, Mirosław Patej, and Sławomir Poskrobko. "Heat Reflective Thin-Film Polymer Insulation with Polymer Nanospheres—Determination of Thermal Conductivity Coefficient." Energies 15, no. 17 (August 29, 2022): 6286. http://dx.doi.org/10.3390/en15176286.

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In this paper, a method to determine the thermal conductivity coefficient λ in a 200 μm thick heat reflective paint layer, filled with polymer nanospheres with a Total Solar Reflectance (TSR) of 86.95%, is proposed and presented. For this purpose, a “hot box”-type (cube-shaped) test rig was built to carry out experimental tests to measure the temperature distribution on the surface of a double-layer wall containing the material under investigation. Together with the experimental studies, a CFD numerical model was prepared to understand the nature of flow and heat transfer inside the cube—the test chamber. Based on the proposed measurement and analysis method, the thermal conductivity coefficient of the heat reflective coating layer was λ = 0.0007941 W/m∙K.

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ZHANG, Xing, Huaqing XIE, Motoo FUJII, Koji TAKAHASHI, Hiroki AGO, Tetsuo SHIMIZU, and Hidekazu ABE. "Measurements of In-Plane Thermal Conductivity and Electrical Conductivity of Suspended Platinum Thin Film." Netsu Bussei 19, no. 1 (2005): 9–14. http://dx.doi.org/10.2963/jjtp.19.9.

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Journal, Baghdad Science. "Study the effect of thickness and annealing temperature on the Electrical Properties of CdTe thin Films." Baghdad Science Journal 5, no. 3 (September 7, 2008): 449–53. http://dx.doi.org/10.21123/bsj.5.3.449-453.

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The electrical properties of polycrystalline cadmium telluride thin films of different thickness (200,300,400)nm deposited by thermal evaporation onto glass substrates at room temperature and treated at different annealing temperature (373, 423, 473) K are reported. Conductivity measurements have been showed that the conductivity increases from 5.69X10-5 to 0.0011, 0.0001 (?.cm)-1 when the film thickness and annealing temperature increase respectively. This increasing in ?d.c due to increasing the carrier concentration which result from the excess free Te in these films.

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Hapenciuc, C. L., I. Negut, A. Visan, T. Borca-Tasciuc, and I. N. Mihailescu. "The effect of the contact point asymmetry on the accuracy of thin films thermal conductivity measurement by scanning thermal microscopy using Wollaston probes." Journal of Applied Physics 131, no. 9 (March 7, 2022): 094902. http://dx.doi.org/10.1063/5.0069273.

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Scanning thermal microscopy is a widely recognized technique nowadays for thermal conductivity measurement of bulk and nanostructured materials. Wollaston probes are presently used in contact or noncontact mode for thermal conductivity measurement. They can be batch or laboratory fabricated and offer an appropriate spatial resolution from a few micrometers to hundreds of nanometers. A study is reported herewith on the errors that can affect the average temperature rise and related probe thermal resistance with a direct impact on thermal conductivity measurement, as a consequence of a contact point asymmetry. The new proposed theoretical model and its results can be used or adapted to any kind and size of probe. The study is based on the fin diffusive heat conduction equation applied on three regions of the probe: left, middle, and right, with respect to the contact point. The thermal conductivity measurement for a thin film on a substrate is simulated and the errors that arise from using an asymmetric contact point are inferred for the three values of the asymmetry. They are next compared to simulations obtained using a simplified model of heat transfer inside the probe and from the probe to the sample. The accuracy of the two models is comparatively analyzed in order to select the optimum one. A primary validation of the asymmetric model is performed using the experimental data from the literature. This analysis can serve as a criterion for the experimental accuracy of the method and improvement possibilities.

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Khoerunnisa, Fitri, Esti Septiani, Hendrawan Hendrawan, and Yaya Sonjaya. "Effect of SWCNT Filler on Mechanical Properties and Electrical Conductivity of PVA/CS/GA/SWCNT Nanocomposite Thin Film." Key Engineering Materials 840 (April 2020): 441–47. http://dx.doi.org/10.4028/www.scientific.net/kem.840.441.

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This study aims to investigate the effect of SWCNT nanofiller on mechanical properties and electrical conductivity of PVA/CS/GA nanocomposite film. Polyvinyl alcohol (PVA) and chitosan (CS) are used as polymer matrix that crosslinked by glutaraldehyde (GA). Nanofiller SWCNT was inserted in a polymer composite matrix at different composition. The thin films were characterized using FTIR (Fourier Transform Infrared Spectroscopy), XRD (X-ray diffraction), SEM (Scanning Electron Microscopy), TG/DTA (Thermal Gravimetric/Differential Thermal Analysis), sheet resistance, and tensile strength measurements. The results revealed that the addition of SWCNT notably increased the electrical conductivity of composite film from 1.2 x 10‒4 S.cm‒1 to 9 x10‒3 S cm‒1 as well as tensile strength and elongation 43 MPa to 62 MPa, 68% to 84%, respectively. The cross-sectional SEM images indicated that the conductive thin films have a layered structure where the insertion of SWCNT did not change their morphological structure significantly. Additionally, SWCNT improved the thermal stability of PVA/CS/GA nanocomposites thin film. These finding can be promising for the development of optoelectronic devices i.e. photovoltaic, emitting diodes, etc.

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Zhou, Yuanyuan, Chunhua Li, David Broido, and Li Shi. "A differential thin film resistance thermometry method for peak thermal conductivity measurements of high thermal conductivity crystals." Review of Scientific Instruments 92, no. 9 (September 1, 2021): 094901. http://dx.doi.org/10.1063/5.0061049.

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Shyju, T. S., S. Anandhi, R. Sivakumar, and R. Gopalakrishnan. "Studies on Lead Sulfide (PbS) Semiconducting Thin Films Deposited from Nanoparticles and Its NLO Application." International Journal of Nanoscience 13, no. 01 (February 2014): 1450001. http://dx.doi.org/10.1142/s0219581x1450001x.

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Nanoparticle Lead sulfide was synthesized via simple chemical method and deposited on glass substrates at different substrate temperatures by thermal evaporation technique. The synthesized nanoparticle PbS was analyzed and confirmed by X-ray diffraction (XRD), Scanning electron microscopy SEM with EDX and thermogravimetry. The structural, optical, morphological and electrical properties of the deposited films were studied using XRD, UV-Vis, Raman, SEM with EDX, atomicforce microscopy AFM and Hall Effect measurements. The thickness of the deposited samples was measured using thickness profilometer. The Raman shift in the peak occurs toward lower energy with increasing substrate temperature deposited lead sulfide. The Z-scan study with open aperture was carried out at 532 nm using 5 ns laser pulse on the deposited films which shows that nonlinear absorption arises from saturable absorption process. The deposited PbS film exhibits p-type conductivity in Hall measurement.

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M. Ali, Sarmad M., Alia A. A. Shehab, and Samir A. Maki. "Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation." Ibn AL- Haitham Journal For Pure and Applied Science 31, no. 3 (November 25, 2018): 20. http://dx.doi.org/10.30526/31.3.2023.

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In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but decreases by increasing Cu concentration.

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