Relevant bibliographies by topics / Thin film thermal conductivity measurement

Academic literature on the topic 'Thin film thermal conductivity measurement'

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Published: 10 December 2022
Last updated: 29 January 2023

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Journal articles on the topic "Thin film thermal conductivity measurement"

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Shaw-Klein, L. J., T. K. Hatwar, S. J. Burns, S. D. Jacobs, and J. C. Lambropoulos. "Anisotropic thermal conductivity of rare earth–transition metal thin films." Journal of Materials Research 7, no. 2 (February 1992): 329–34. http://dx.doi.org/10.1557/jmr.1992.0329.

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Thermal conductivity measurements were performed on several amorphous rare earth transition metal thin films of varying microstructure. The thermal conductivity perpendicular to the plane of the film, measured by the thermal comparator method, was compared with the thermal conductivity value measured parallel to the plane of the film. The latter value was obtained by converting electrical conductivity values to thermal conductivity via the Wiedemann–Franz relationship. As expected, the columnar microstructure induced during the sputter deposition of the thin films causes an anisotropy in the thermal conductivity values, with the in-plane values consistently lower than the out-of-plane values. The effect is most pronounced for the more columnar films deposited at higher pressure, for which the in-plane thermal conductivity, 0.3 W/mK, is an order of magnitude lower than the out-of-plane thermal conductivity, 4.3 W/mK. The thermal conductivity out of the plane of the film decreased with increasing deposition pressure, due to the decreasing film density.
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Moon, Seung Jae. "Determination of Thermal Conductivity of Amorphous Silicon Thin Films via Non-Contacting Optical Probing." Key Engineering Materials 326-328 (December 2006): 689–92. http://dx.doi.org/10.4028/www.scientific.net/kem.326-328.689.

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The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.
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Alajlouni, Sami, David Alberto Lara Ramos, Kerry Maize, Nicolás Pérez, Kornelius Nielsch, Gabi Schierning, and Ali Shakouri. "Estimating thin-film thermal conductivity by optical pump thermoreflectance imaging and finite element analysis." Journal of Applied Physics 131, no. 18 (May 14, 2022): 185111. http://dx.doi.org/10.1063/5.0084566.

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We introduce a noncontact experiment method to estimate thermal conductivity of nanoscale thin films by fitting high spatial resolution thermoreflectance images of surface spot heating to a finite element simulated temperature distribution. The thin-film top surface is heated by a [Formula: see text]m diameter focused, 825 nm wavelength laser spot. The surface temperature distribution in the excited sample is imaged by thermoreflectance microscopy with submicrometer spatial resolution and up to 10 mK temperature resolution. Thin-film thermal conductivity is extracted by fitting a measured surface temperature distribution to a 3D finite element temperature model. The method is demonstrated by estimating thermal conductivity for an isotropic thin-film metal (nickel, 60–260 nm) on a glass substrate. The fitted Ni thermal conductivity was 50 ± 5 W/m K, which is in good agreement with the literature. Also, we present a detailed finite element analysis for an anisotropic thin-film semiconductor sample to show how the method could be extended to estimate thermal conductivity of anisotropic thin films. Advantages of the new method are easy sample preparation (no top surface transducer film or integrated heater required), rapid in situ measurement, and application to a broad range of thin-film materials.
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Wang, Xinwei, Hanping Hu, and Xianfan Xu. "Photo-Acoustic Measurement of Thermal Conductivity of Thin Films and Bulk Materials." Journal of Heat Transfer 123, no. 1 (June 25, 2000): 138–44. http://dx.doi.org/10.1115/1.1337652.

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The photoacoustic (PA) technique is one of many techniques for measuring thermal conductivity of thin films. Compared with other techniques for thermal conductivity measurement, the photoacoustic method is relatively simple, yet is able to provide accurate thermal conductivity data for many types of thin films and bulk materials. In this work, the PA measurement in a high frequency range is made possible by a newly developed PA apparatus, which extends the limit of the PA technique. Thermal conductivities of SiO2 with thicknesses from 0.05 to 0.5 μm on Si wafer, e-beam evaporated thin nickel film on Si wafer, and thermal barrier coatings are obtained. In addition to the commonly used phase shift fitting, which is only appropriate for thermally-thin films, an amplitude fitting method is developed and employed for measuring both thin films and bulk materials with smooth or rough surfaces. Comparing results by amplitude fitting to those obtained by other methods and reference values shows good agreements. Applications and limitations of the photoacoustic technique are discussed.
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Zeng, J. S. Q., P. C. Stevens, A. J. Hunt, R. Grief, and Daehee Lee. "Thin-film-heater thermal conductivity apparatus and measurement of thermal conductivity of silica aerogel." International Journal of Heat and Mass Transfer 39, no. 11 (July 1996): 2311–17. http://dx.doi.org/10.1016/0017-9310(95)00307-x.

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Chu, Dachen, Maxat Touzelbaev, Kenneth E. Goodson, Sergey Babin, and R. Fabian Pease. "Thermal conductivity measurements of thin-film resist." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 19, no. 6 (2001): 2874. http://dx.doi.org/10.1116/1.1421557.

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Chien, Heng-Chieh, Da-Jeng Yao, Mei-Jiau Huang, and Tien-Yao Chang. "Thermal conductivity measurement and interface thermal resistance estimation using SiO2 thin film." Review of Scientific Instruments 79, no. 5 (May 2008): 054902. http://dx.doi.org/10.1063/1.2927253.

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Indermuehle, S. W., and R. B. Peterson. "A Phase-Sensitive Technique for the Thermal Characterization of Dielectric Thin Films." Journal of Heat Transfer 121, no. 3 (August 1, 1999): 528–36. http://dx.doi.org/10.1115/1.2826013.

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A phase-sensitive measurement technique for determining two independent thermal properties of a thin dielectric film is presented. The technique involves measuring a specimen’s front surface temperature response to a periodic heating signal over a range of frequencies. The phase shift of the temperature response is fit to an analytical model using thermal diffusivity and effusivity as fitting parameters, from which the thermal conductivity and specific heat can be calculated. The method has been applied to 1.72-μm thick films of SiO2 thermally grown on a silicon substrate. Thermal properties were obtained through a temperature range from 25°C to 300°C. One interesting outcome stemming from analysis of the experimental data is the ability to extract both thermal conductivity and specific heat of a thin film from phase information alone. The properties obtained with this method are slightly below the bulk values for fused silica with a measured room temperature (25°C) thermal conductivity of 1.28 ± 0.12 W/m-K.
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Makarova, E. S., and A. V. Novotelnova. "Estimating the uncertainty of measurements of thermal conductivity of thin films of thermoelectrics with the 3-omega method." Journal of Physics: Conference Series 2057, no. 1 (October 1, 2021): 012108. http://dx.doi.org/10.1088/1742-6596/2057/1/012108.

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Abstract Using the method of computer simulation, the uncertainty of measurements of the thermal conductivity of silicon, which is often used as substrates, and also thin films based on bismuth, is estimated. The influence of the application of an additional dielectric layer between the thermoelectric film and the resistive heater on the measurement results is shown.
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Allmaras, J. P., A. G. Kozorezov, A. D. Beyer, F. Marsili, R. M. Briggs, and M. D. Shaw. "Thin-Film Thermal Conductivity Measurements Using Superconducting Nanowires." Journal of Low Temperature Physics 193, no. 3-4 (July 24, 2018): 380–86. http://dx.doi.org/10.1007/s10909-018-2022-0.

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Dissertations / Theses on the topic "Thin film thermal conductivity measurement"

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Shrestha, Ramesh. "High-Precision Micropipette Thermal Sensor for Measurement of Thermal Conductivity of Carbon Nanotubes Thin Film." Thesis, University of North Texas, 2011. https://digital.library.unt.edu/ark:/67531/metadc103393/.

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The thesis describes novel glass micropipette thermal sensor fabricated in cost-effective manner and thermal conductivity measurement of carbon nanotubes (CNT) thin film using the developed sensor. Various micrometer-sized sensors, which range from 2 µm to 30 µm, were produced and tested. The capability of the sensor in measuring thermal fluctuation at micro level with an estimated resolution of ±0.002oC is demonstrated. The sensitivity of sensors was recorded from 3.34 to 8.86 µV/oC, which is independent of tip size and dependent on the coating of Nickel. The detailed experimental setup for thermal conductivity measurement of CNT film is discussed and 73.418 W/moC was determined as the thermal conductivity of the CNT film at room temperature.
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Faghani, Farshad. "Thermal conductivity Measurement of PEDOT:PSS by 3-omega Technique." Thesis, Linköpings universitet, Fysik och elektroteknik, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-63317.

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Conducting polymers (CP) have received great attention in both academic and industrial areas in recent years. They exhibit unique characteristics (electrical conductivity, solution processability, light weight and flexibility) which make them promising candidates for being used in many electronic applications. Recently, there is a renewed interest to consider those materials for thermoelectric generators that is for energy harvesting purposes. Therefore, it is of great importance to have in depth understanding of their thermal and electrical characteristics. In this diploma work, the thermal conductivity of PEDOT:PSS is investigated by applying 3-omega technique which is accounted for a transient method of measuring thermal conductivity and specific heat. To validate the measurement setup, two benchmark substrates with known properties are explored and the results for thermal conductivity are nicely in agreement with their actual values with a reasonable error percentage. All measurements are carried out inside a Cryogenic probe station with vacuum condition. Then a bulk scale of PEDOT:PSS with sufficient thickness is made and investigated. Although, it is a great challenge to make a thick layer of this polymer since it needs to be both solid state and has as smooth surface as possible for further gold deposition. The results display a thermal conductivity range between 0.20 and 0.25 (W.m-1.K-1) at room temperature which is a nice approximation of what has been reported so far. The discrepancy is mainly due to some uncertainty about the exact value of temperature coefficient of resistance (TCR) of the heater and also heat losses especially in case of heaters with larger surface area. Moreover, thermal conductivity of PEDOT:PSS is studied over a wide temperature band ranging from 223 - 373 K.
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Thuau, Damien. "Fabrication and characterisation of carbon-based devices." Thesis, University of Edinburgh, 2012. http://hdl.handle.net/1842/5879.

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Thin film material properties and measurement characterisation techniques are crucial for the development of micro-electromechanical systems (MEMS) devices. Furthermore, as the technology scales down from microtechnology towards nanotechnology, nanoscale materials such as carbon nanotubes (CNTs) are required in electronic devices to overcome the limitations encountered by conventional materials at the nanoscale. The integration of CNTs into micro-electronics and material applications is expected to provide a wide range of new applications. The work presented in this thesis has contributed to the development of thin film material characterisation through research on the thermal conductivity measurement and the control of the residual stress of thin film materials used commonly in MEMS devices. In addition, the use of CNTs in micro-electronics and as filler reinforcement in composite materials applications have been investigated, leading to low resistivity CNTs interconnects and CNTs-Polyimide (PI) composites based resistive humidity sensors. In the first part of this thesis, the thermal conductivity of conductive thin films as well as the control of the residual stress arising from fabrication process in PI micro-cantilevers have been studied. A MEMS device has been developed for the thermal conductivity characterisation of conductive thin films showing good agreement with thermal conductivity of bulk material. Low energy Ar+ ion bombardment in a plasma has been used to control the residual stress present in PI cantilevers. Appropriate ion energy and exposure time have led to stress relaxation of the beams resulting in a straight PI cantilever beam. In the second part of this thesis, low resistivity CNTs interconnects have been developed using both dielectrophoresis (DEP) and Focused Ion Beam (FIB) techniques. An investigation of the effects of CNT concentration, applied voltage and frequency on the CNTs alignment between Al and Ti electrodes has resulted in the lowering of the CNTs’ resistance. The deposition of Pt contact using FIB at the CNTs-metal electrodes interface has been found to decrease the high contact resistances of the devices by four and two orders of magnitude for Al and Ti electrodes respectively. The last part of this thesis focuses on the preparation of CNTs-PI composite materials, its characterisation and its application as resistive humidity sensor. The integration of CNTs inside the PI matrix has resulted in enhancing significantly the electrical and mechanical properties of the composites. In particular, a DEP technique employed to induce CNTs alignment inside the PI matrix during curing has been attributed to play an important role in improving the composite properties and lowering the percolation threshold. In addition, the fabrication and testing of CNTs-PI resistive humidity sensors have been carried out. The sensing performance of the devices have shown to be dependent highly on the CNT concentration. Finally, the alignment of CNTs by DEP has improved the sensing properties of CNTs-PI humidity sensors and confirmed that the change of resistance in response to humidity is governed by the change of the CNTs’ resistances due to charge transfer from the water molecules to the CNTs.
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Bogner, Manuel. "Thermal conductivity measurements of thin films using a novel 3 omega method." Thesis, Northumbria University, 2017. http://nrl.northumbria.ac.uk/36186/.

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For most micro- and nanoelectronic devices based on thin films applied for effective heat dissipation and thermoelectric devices for energy harvesting, thermal management is a critical subject for their device performance and reliability. This thesis focuses on the investigation of the cross- and in-plane thermal conductivities of both high- and low-thermal conductive thin film materials. Aluminum nitride (AlN), with its high thermal conductivity, has been studied, as it is a promising candidate for effective heat conductors in microelectronic devices. Copper iodide (CuI) has also been investigated in this thesis, because of its great interest in novel energy harvesting applications with low thermal conductivity and outstanding thermoelectric properties. Thermal conductivities of thin films tend to be substantially different from those of their bulk counterparts, which is generally caused by oxygen impurities, dislocations, and grain boundary scattering, all of which can reduce the thermal conductivity of the films. These effects also influence cross- and in-plane heat conduction differently, so that the thermal conductivities of the thin films are generally anisotropic in these two directions. Therefore, experimental work and theoretical analysis have been conducted to understand the effects of crystallinity, grain sizes, and interfacial structures of AlN and CuI films on their thermal conductivities as a function of film thickness. An improved differential multi-heater 3ω method was established and used to study the thickness-dependency of cross- and in-plane thermal conductivities of CuI and AlN thin films sputtered on p-type doped silicon substrates with film thicknesses varied between 70 - 400 nm and 100 – 1000 nm, respectively. Furthermore, our newly proposed 3ω Microscopy method, which combines the advantages of both the conventional 3ω method and atomic force microscopy (AFM) technology, was applied to quantitatively measure the local thermal conductivities of CuI and AlN thin films, with a spatial resolution in sub-micrometer range. Results revealed that both the cross- and in-plane thermal conductivities of the CuI and AlN thin films were significantly smaller than those of their bulk counterparts. The cross- and in-plane thermal conductivities were strongly dependent on the film thickness. Both the X-ray diffraction and 3ω Microscopy results indicated that the grain size of thin films significantly affected their thermal conductivity due to the scattering effects from the grain boundaries. Finally, the 3ω Microscopy has been proven to provide additional experimental findings, which cannot be identified or detected using conventional thermal characterization methods such as the standard 3ω technique. Its good spatially-resolved resolution for quantitative local thermal characterization, its nondestructive characteristic and without a need for sample preparation, make the 3ω Microscopy a promising thermal characterization method.
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Zink, Barry Lee. "Specific heat and thermal conductivity of thin film amorphous magnetic semiconductors /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2002. http://wwwlib.umi.com/cr/ucsd/fullcit?p3070996.

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Munro, Troy Robert. "Thermal Property Measurement of Thin Fibers by Complementary Methods." DigitalCommons@USU, 2016. https://digitalcommons.usu.edu/etd/4702.

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To improve measurement reliability and repeatability and resolve the orders of magnitude discrepancy between the two different measurements (via reduced model transient electrothermal and lock-in IR thermography), this dissertation details the development of three complementary methods to accurately measure the thermal properties of the natural and synthetic Nephila (N.) clavipes spider dragline fibers. The thermal conductivity and diffusivity of the dragline silk of the N. clavipes spider has been characterized by one research group to be 151-416 W m−1 K −1 and 6.4-12.3 ×10−5 m2 s −1 , respectively, for samples with low to high strains (zero to 19.7%). Thermal diffusivity of the dragline silk of a different spider species, Araneus diadematus, has been determined by another research group as 2 ×10−7 m2 s −1 for un-stretched silk. This dissertation seeks to resolve this discrepancy by three complementary methods. The methods detailed are the transient electrothermal technique (in both reduced and full model versions), the 3ω method (for both current and voltage sources), and the non-contact, photothermal, quantum-dot spectral shape-based fluorescence thermometry method. These methods were also validated with electrically conductive and non-conductive fibers. The resulting thermal conductivity of the dragline silk is 1.2 W m−1 K −1 , the thermal diffusivity is 6 ×10−7 m2 s −1 , and the volumetric heat capacity is 2000 kJ m−3 K −1 , with an uncertainty of about 12% for each property
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Harris, Kurt E. "Characterization of Carbon Nanostructured Composite Film Using Photothermal Measurement Technique." DigitalCommons@USU, 2018. https://digitalcommons.usu.edu/etd/6931.

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Graphene is a form of carbon with unique thermal and structural properties, giving it high potential in many applications, from electronics to driveway heating. Advanced fabrication techniques putting small, graphene-like structures in a polymer matrix could allow for incorporation of some of the benefits of graphene into very lightweight materials, and allow for broader commercialization. Measuring the thermal properties of these thin-film samples is a technical capability in need of development for use with the specific specimens used in this study. Relating those thermal properties to the microstructural composition was the focus of this work. Several conclusions could be drawn from this study which will help guide future development efforts. Among these findings, it was found that increasing carbon content only improves thermal and electrical conductivity if the samples were of low porosity. Samples of approximately identical overall carbon content and void content had higher thermal conductivity if some carbon nanotubes were added in place of graphite. Nanotubes also appeared to reduce variability in thermal conductivity between pressed and unpressed samples, allowing for more predictable properties in fabrication.
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Kim, Ick Chan. "Experimental investigation of size effect on thermal conductivity for ultra-thin amorphous poly(methyl methacrylate) (PMMA) films." [College Station, Tex. : Texas A&M University, 2007. http://hdl.handle.net/1969.1/ETD-TAMU-1348.

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Lankford, Maggie E. "Measurement of Thermo-Mechanical Properties of Co-Sputtered SiO2-Ta2O5 Thin Films." University of Dayton / OhioLINK, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1627653071556618.

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Osborne, Daniel Josiah. "A Nanoengineering Approach to Oxide Thermoelectrics For Energy Harvesting Applications." Thesis, Virginia Tech, 2010. http://hdl.handle.net/10919/36133.

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The ability of uniquely functional thermoelectric materials to convert waste heat directly into electricity is critical considering the global energy economy. Profitable, energy-efficient thermoelectrics possess thermoelectric figures of merit ZT â ¥ 1. We examined the effect of metal nanoparticle â oxide film interfaces on the thermal conductivity κ and Seebeck coefficient α in bilayer and multilayer thin film oxide thermoelectrics in an effort to improve the dimensionless figure of merit ZT. Since a thermoelectricâ s figure of merit ZT is inversely proportional to κ and directly proportional to α, reducing κ and increasing α are key strategies to optimize ZT. We aim to reduce κ by phonon scattering due to the inclusion of metal nanoparticles in the bulk of thermoelectric thin films deposited by Pulsed Laser Deposition. XRD, AFM, XPS, and TEM analyses were carried out for structural and compositional characterization. The electrical conductivities of the samples were measured by a four-point probe apparatus. The Seebeck coefficients were measured in-plane, varying the temperature from 100K to 310K. The thermal conductivities were measured at room temperature using Time Domain Thermoreflectance.
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Books on the topic "Thin film thermal conductivity measurement"

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Standardization, International Organization for, and Versailles Project on Advanced Materials and Standards., eds. Measurement of thermal conductivity of thin films on silicon substrates =: Mesurage de la conductivit́́́́́e thermique des films minces sur substrat de silicium. Geneva, Switzerland: International Organization for Standardization, 2002.

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Book chapters on the topic "Thin film thermal conductivity measurement"

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Yu, X. Y., L. Zhang, and G. Chen. "Laser-Assisted AC Measurement of Thin-Film Thermal Diffusivity with Different Laser Beam Configurations." In Thermal Conductivity 23, 195–206. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9781003210719-22.

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Relyea, H. M., F. Breidenich, J. V. Beck, and J. J. McGrath. "Measurement of Thermal Properties of Thin Films Using Infrared Thermography." In Thermal Conductivity 23, 183–94. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9781003210719-21.

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Anthony, T. R. "The thermal conductivity of cvd diamond films." In Thin Film Diamond, 75–81. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-0725-9_6.

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Schmidt, R., Th Franke, and P. Häussler. "An Improved Dynamical Method for Thermal Conductivity and Specific Heat Measurements of Thin Films in the 100 nm-Range." In Thermal Conductivity 23, 162–71. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9781003210719-19.

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Rosencwaig, Allan. "Thermal-Wave Measurement of Thin-Film Thickness." In ACS Symposium Series, 181–91. Washington, DC: American Chemical Society, 1986. http://dx.doi.org/10.1021/bk-1986-0295.ch010.

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Fahsold, Gerhard, and Annemarie Pucci. "Non-contact Measurement of Thin-Film Conductivity by IR Spectroscopy." In Advances in Solid State Physics, 833–48. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-540-44838-9_59.

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Habib, Khaled. "Measurement of Thermal Expansion Coefficients of Thin Film of Different Organic Coatings by Shearography." In Advanced Nondestructive Evaluation I, 67–70. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-412-x.67.

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Habib, Khaled. "Measurement of Thermal Expansion Coefficients of a Thin Film of Different Ceramic Coatings by Shearography." In Advances in Composite Materials and Structures, 529–32. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-427-8.529.

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Volklein, F. "Measurement of the Thermal Conductivity of Thin Films." In Thermoelectrics Handbook, 24–1. CRC Press, 2005. http://dx.doi.org/10.1201/9781420038903.ch24.

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Katsura, Takao. "Transparent Vacuum Insulation Panels." In Advances and Technologies in Building Construction and Structural Analysis. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.92422.

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New, low-cost transparent vacuum insulation panels (TVIPs) using structured cores for the windows of existing buildings are proposed. The TVIP is produced by inserting the structured core, the low-emissivity film, and the adsorbent into the transparent gas barrier envelopes. In this chapter, the authors introduce the outlines, the design and thermal analysis method, the performance evaluation (test) method. Firstly, five spacers, namely peek, modified peek, mesh, silica aerogel, and frame, are selected as the structured core. The effective thermal conductivity of TVIPs with five different spacers is evaluated at different pressure levels by applying numerical calculation. The result indicated that TVIPs with frame and mesh spacers accomplish better insulation performance, with a center-of-panel apparent thermal conductivity of 7.0 × 10−3 W/m K at a pressure of 1 Pa. The apparent thermal conductivity is the same as the value obtained by the simultaneous evacuation thermal conductivity measurement applying the heat flux meter method. Furthermore, using a frame-type TVIP with a total thickness of 3 mm attached to an existing window as a curtain decreases the space heat loss by approximately 69.5%, whereas the light transparency decreases to 75%.
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Conference papers on the topic "Thin film thermal conductivity measurement"

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Jan, Antony, Ramez Cheaito, Kenneth E. Goodson, and Bruce M. Clemens. "Thermal Conductivity Measurement of In0.10Ga0.90As0.96N0.04 Thin Film." In ASME 2017 Heat Transfer Summer Conference. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/ht2017-5089.

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Dilute indium gallium arsenide nitrides (InxGa1-xAs1-yNy) are valuable in photonic applications as long wavelength emitters and for pairing with silica optical fibers for low attenuation optical fiber communications. The reliable operation of these devices is tied to a precise temperature control and the knowledge of the thermal properties of their components. However, the thermal conductivity of bulk or thin film InGaAsN of any composition are, to the best of our knowledge, not available in literature. In response, we use time-domain thermoreflectance (TDTR) to measure the thermal conductivity of a 78 nm In0.10Ga0.90As0.96N0.04 film grown by metalorganic chemical vapor deposition (MOCVD) on GaAs substrate. The thermal conductivity of In0.10Ga0.90As0.96N0.04 is found to be 6 +/− 0.5 Wm−1K−1, a factor of two lower than that of bulk In0.10Ga0.90As. To our knowledge this is the first reported thermal conductivity measurement on InGaAsN. We also present an analytical model for predicting the thermal conductivity of InGaAsN for any composition. Using this model, we find that the reduction in thermal conductivity can be attributed to the scattering of phonons by nitrogen impurities and boundary scattering of long mean free path phonons from the film thickness.
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Feldman, Albert, Naira M. Balzaretti, and Arthur H. Guenther. "Workshop on thin film thermal conductivity measurements." In Laser-Induced Damage in Optical Materials: 1997, edited by Gregory J. Exarhos, Arthur H. Guenther, Mark R. Kozlowski, and M. J. Soileau. SPIE, 1998. http://dx.doi.org/10.1117/12.307001.

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Zhu, Jie, Dawei Tang, Wei Wang, Jun Liu, and Ronggui Yang. "Frequency-Domain Thermoreflectance Technique for Measuring Thermal Conductivity and Interface Thermal Conductance of Thin Films." In 2010 14th International Heat Transfer Conference. ASMEDC, 2010. http://dx.doi.org/10.1115/ihtc14-22522.

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The thermal conductivity of thin films and interface thermal conductance of dissimilar materials play a critical role in the functionality and the reliability of micro/nano-materials and devices. The transient thermoreflectance methods, including the time-domain thermoreflectance (TDTR) and the frequency-domain thermoreflectance (FDTR) techniques are excellent approaches for the challenging measurements of interface thermal conductance of dissimilar materials. A theoretical model is introduced to analyze the TDTR and FDTR signals in a tri-layer structure which consists of metal transducer, thin film, and substrate. Such a tri-layer structure represents typical sample geometry in the thermoreflectance measurements for the thermal conductivity and interface thermal conductance of thin films. The sensitivity of TDTR signals to the thermal conductivity of thin films is analyzed to show that the modulation frequency needs to be selected carefully for a high accuracy TDTR measurement. However, such a frequency selection is closely related to the unknown thermal properties and consequently hard to make before the measurement. Fortunately this limitation can be avoided in FDTR. Depending on the modulation frequency, the heat transport in such a tri-layer could be divided into three regimes based on the thickness of the film and the thermal penetration depth, the thermal conductivity of thin films and interface thermal conductance can be subsequently obtained by fitting different frequency regions of one FDTR measurement curve. FDTR measurements are then conducted along with the aforementioned analysis to obtain the thermal conductivity of SiO2 thin films and interface thermal conductance SiO2 and Si. FDTR measurement results agree well with the TDTR measurements, but promises to be a much easier implementation than TDTR measurements.
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Maize, K., Y. Ezzahri, X. Wang, S. Singer, A. Majumdar, and A. Shakouri. "Measurement of Thin Film Isotropic and Anisotropic Thermal Conductivity Using 3ω and Thermoreflectance Imaging." In SEMI-THERM '08. 2008 24th Annual IEEE Semiconductor Thermal Measurement and Management Symposium. IEEE, 2008. http://dx.doi.org/10.1109/stherm.2008.4509388.

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Jeong, Taehee, and Jian-Gang Zhu. "Thermal Conductivity Measurement of Cobalt-Iron Thin Films Using the Time-Resolved Thermoreflectance Technique." In ASME 2009 Heat Transfer Summer Conference collocated with the InterPACK09 and 3rd Energy Sustainability Conferences. ASMEDC, 2009. http://dx.doi.org/10.1115/ht2009-88330.

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Using the time–resolved thermoreflectance technique, the thermal conductivity of CoFe films are measured with various thicknesses and the results show a thickness-dependent thermal conductivity. In order to overcome the obstacle for the high thermal conductivity metal film measurement, a thermal barrier (SiNx) is added between the metal film and Si substrate.
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Stojanovic, Nenad, Jongsin Yun, Jordan M. Berg, Mark Holtz, and Henryk Temkin. "Model-Based Data Analysis for Thin-Film Thermal Conductivity Measurement Using Microelectrothermal Test Structures." In ASME 2007 International Mechanical Engineering Congress and Exposition. ASMEDC, 2007. http://dx.doi.org/10.1115/imece2007-42750.

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We present a new method for measuring thermal conductivities of films with nanoscale thickness. The method combines a microelectrothermal test structure with a finite-element-based data analysis procedure. The test device consists of two serpentine nickel structures, which serve as resistive heaters and resistance temperature detectors, on top of the sample. The sample is supported by a silicon nitride membrane. Analytical solution of the heat flow is infeasible, making interpretation of the data difficult. To address this, we use a finite-element model of the test structure, and apply nonlinear least-squares estimation to extract the desired material parameter values. The approach permits simultaneous extraction of multiple parameters. We demonstrate our technique by simultaneously obtaining the thermal conductivity of a 280 μm by 80 μm by 140 nm thick aluminum sample and the 360 μm by 160 μm by 180 nm thick silicon nitride support membrane. The thermal conductivity measured for the silicon nitride thin film is 2.1 W/mK, in agreement with reported values for films of this thickness. The thermal conductivity of the Al thin film is found to be 94 W/mK—significantly lower than reported bulk values, and consistent both with reported trends for thin metallic films and with values obtained using electrical resistivity measurements and the Wiedemann-Franz law.
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Yao, Da-Jeng, Heng-Chieh Chien, and Ming-Hsi Tseng. "A Rapid Method to Measure Thermal Conductivity of Dielectric Thin Films: Thermal Resistance Method." In ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/ipack2005-73350.

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A new and relatively simple method, described for thermal conductivity measurement of dielectric thin films, is presented in this paper. This new technique, the thermal resistance method, can be applied to determine cross-plane thermal conductivity of thin film by electrical heating and sensing techniques without traditional free standing structure design. A slender metal line, deposited on top of dielectric film, is used to measure and extract thermal resistance (Rc) of composite structure, including substrate and dielectric film. A 2-D analytical solution is derived to get thermal resistance (Rs) of substrate. Therefore, the thermal resistance of thin film (Rf) is calculated by subtracting Rs form Rc and thermal conductivity of thin film can also be extracted from thermal resistance. The measurement data of silicon dioxide with difference thickness are verified by using previous scientific literatures. In addition, the measuring results also show good agreement with those measured by 3 omega method. According to advantages of rather rapid and accuracy, this new technique has potential to develop to be an in-line test key for MEMS and IC relative industries.
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Roncaglia, A., F. Mancarella, M. Sanmartin, I. Elmi, G. C. Cardinali, and M. Severi. "Wafer-Level Measurement of Thermal Conductivity on Thin Films." In 2006 5th IEEE Conference on Sensors. IEEE, 2006. http://dx.doi.org/10.1109/icsens.2007.355852.

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Shin, S. W., H. N. Cho, and H. H. Cho. "MEASUREMENT OF THERMAL CONDUCTIVITY OF SILICON NITRIDE THIN FILMS." In Annals of the Assembly for International Heat Transfer Conference 13. Begell House Inc., 2006. http://dx.doi.org/10.1615/ihtc13.p2.50.

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Hur, Soojung C., Laurent Pilon, Adam Christensen, and Samuel Graham. "Thermal Conductivity of Cubic Mesoporous Silica Thin Films." In ASME 2007 International Mechanical Engineering Congress and Exposition. ASMEDC, 2007. http://dx.doi.org/10.1115/imece2007-43016.

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This paper reports, for the first time, the cross-plane thermal conductivity of highly ordered cubic mesoporous silica thin films with porosity of 31% and thickness ranging between 200 and 500 nm. The mesoporous thin films are synthesized based on evaporation induced self-assembly process. The pores are spherical with average inter-pore spacing and pore diameter equal to 5.95 nm and 5 nm, respectively. The thermal conductivity is measured at room temperature using the 3ω method. The experimental setup and the associated analysis are validated by comparing the thermal conductivity measurements for the silicon substrate and for high quality thermal oxide thin films with data reported in the literature. The cross-plane thermal conductivity of the synthesized mesoporous silica thin films does not strongly depend on film thickness due to the reduction in phonon mean free path caused by the presence of nanopores. The average thermal conductivity is 0.61 ± 0.011 W/mK, which is 56% lower than that of bulk fused silica at room temperature.
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