Journal articles: 'Thin film studies'

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Jianqiang Gu, Jianqiang Gu, Changlei Wang Changlei Wang, Zhen Tian Zhen Tian, Feng Liu Feng Liu, Xueqian Zhang Xueqian Zhang, Jiaguang Han Jiaguang Han, Mingxia He Mingxia He, et al. "Systematic studies of terahertz metamaterials fabricated on thin Mylar film." Chinese Optics Letters 9, s1 (2011): s10404–310406. http://dx.doi.org/10.3788/col201109.s10404.

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Hwang, Young Kyu, Ajit Singh Mamman, K. R. Patil, Lee Kyung Kim, Jin Soo Hwang, and Jong San Chang. "Reflectometry Studies of Mesoporous Silica Thin Films." Solid State Phenomena 135 (February 2008): 31–34. http://dx.doi.org/10.4028/www.scientific.net/ssp.135.31.

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Reflectometry technique has been successfully applied to investigate the correlation between the porosity and optical property (refractive index) of the ordered mesoporous thin film deposited on silicon wafer substrates. The measured optical spectra were simulated by the Effective Medium approximation model. The reflectometry technique has been found to be appropriate for the measurement of thickness of thin films as well as thick layer films. The mesoporous silica films prepared from tri-block copolymer (F-127) as a surfactant and polypropylene oxide as a swelling agent were subsequently exposed to the ammonia vapors to enhance thermal stability and shrinkage minimization of the film that results in increased film thickness.

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Zhang, Yaoping, Hong Zhou, Junqi Fan, and Hong Xu. "Studies on properties of YbF3 thin film by different deposition parameters." Chinese Optics Letters 11, S1 (2013): S10215. http://dx.doi.org/10.3788/col201311.s10215.

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Balasundraprabhu, Rangasamy, E. V. Monakhov, N. Muthukumarasamy, and B. G. Svensson. "Studies on Nanostructure ITO Thin Films on Silicon Solar Cells." Advanced Materials Research 678 (March 2013): 365–68. http://dx.doi.org/10.4028/www.scientific.net/amr.678.365.

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Nanostructure ITO thin films have been deposited on well cleaned glass and silicon substrates using dc magnetron sputtering technique. The ITO films are post annealed in air using a normal heater setup in the temperature range 100 - 400 °C. The ITO film annealed at 300°C exhibited optimum transparency and resistivity values for device applications. The thickness of the ITO thin films is determined using DEKTAK stylus profilometer. The sheet resistance and resistivity of the ITO films were determined using four probe technique. Finally, the optimized nanostructure ITO layers are incorporated on silicon solar cells and the efficiency of the solar cell are found to be in the range 12-14%. Other solar cell parameters such as fill factor(FF), open circuit voltage(Voc),Short circuit current(Isc), series resistance(Rs) and shunt resistance(Rsh) have been determined. The effect of ITO film thickness on silicon solar cells is also observed.

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Subba Rao, K., R. Tamm, S. C. Wimbush, G. H. Cao, C. G. Oertel, Werner Skrotzki, and B. Holzapfel. "Texture Studies on Borocarbide Thin Films." Materials Science Forum 495-497 (September 2005): 1425–30. http://dx.doi.org/10.4028/www.scientific.net/msf.495-497.1425.

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Epitaxial thin films of the superconducting borocarbide compound YNi2B2C were grown on single crystal MgO (100) substrates without and with Y2O3 buffer layer using pulsed laser deposition (PLD). In both cases YNi2B2C grows with [001] normal to the substrate. However, the in-plane texture depends on the starting condition. For samples without buffer layer, oxygen from the substrate diffuses into the film and forms an Y2O3 reaction layer at the interface. As a consequence, a deficiency of Y is generated giving rise to the formation of secondary phases. On the other hand, using an artificial Y2O3 buffer layer secondary phases are suppressed. The texture of the Y2O3 layers determines the texture of the YNi2B2C film. The superconducting properties of the borocarbide films are discussed with respect to texture and phase purity.

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Mahalingam, T., V. Dhanasekaran, S. Rajendran, R. Chandramohan, Luis Ixtlilco, and P. J. Sebastian. "Electrosynthesis and Studies on CdZnSe Thin Films." Journal of New Materials for Electrochemical Systems 15, no. 1 (December 6, 2011): 37–42. http://dx.doi.org/10.14447/jnmes.v15i1.86.

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Electrodeposited CdZnSe thin films have been prepared at various bath temperatures. The thickness of the films was estimated between 850 nm and 1500 nm by stylus method. The X-ray diffraction patterns revealed that the polycrystalline nature with cubic structure of CdZnSe alloy thin films. Microstructural properties such as, crystallite size, dislocation density, microstrain and number of crystallites per unit area were calculated using predominant orientation of the films. SEM images revealed that the surface morphology could be tailored suitably by adjusting the pH value during deposition. The surface roughness of the film was estimated using topographical studies. Optical properties of the film were analyzed from absorption and transmittance studies. Optical band gap of the films increased from 1.67 to 1.72 eV with the increase of bath temperature from 30 to 90℃. The optical constants (refractive index (n) and extinction coefficient (k)) of CdZnSe thin films were evaluated using optical studies.

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Bharathi, B., S. Thanikaikarasan, P. V. Chandrasekar, Pratap Kollu, T. Mahalingam, and Luis Ixtlilco. "Studies on Electrodeposited NiS Thin Films." Journal of New Materials for Electrochemical Systems 17, no. 3 (October 3, 2014): 167–71. http://dx.doi.org/10.14447/jnmes.v17i3.417.

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Thin films of NiS have been deposited on indium doped tin oxide coated conducting glass substrates using electrodeposition technique. Structural studies revealed that the deposited films exhibit hexagonal structure with preferential orientation along (002) plane. Structural parameters such as crystallite size, strain and dislocation density are calculated for films with different thickness values obtained at various deposition time. The film composition and surface morphology have been analyzed using scanning electron microscopy and energy dispersive analysis by X-rays. Optical absorption analysis showed that the deposited films possess band gap value around 0.7 eV.

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Xie, Jian Sheng, Jin Hua Li, and Ping Luan. "Thin CuInSi Film Deposited by Magnetron Co-Sputtering." Advanced Materials Research 433-440 (January 2012): 302–5. http://dx.doi.org/10.4028/www.scientific.net/amr.433-440.302.

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Thin CuInSi films have been prepared by magnetron co-sputtering, and followed by annealing in N2 atmosphere at different temperatures. The structures of CuInSi films were detected by X-ray diffraction(XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, In2O3 and other peaks. The morphology of the film surface was studied by SEM. The band gap has been estimated from the optical absorption studies and found to be about 1.40 eV, but changes with purity of CuInSi. CuInSi thin film is a potential absorber layer material applied in solar cells and photoelectric automatic control.

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Moustakas, Theodore D. "Molecular Beam Epitaxy: Thin Film Growth and Surface Studies." MRS Bulletin 13, no. 11 (November 1988): 29–36. http://dx.doi.org/10.1557/s0883769400063892.

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Molecular Beam Epitaxy (MBE) is a thin film deposition process in which thermal beams of atoms or molecules react on the clean surface of a single-crystalline substrate, held at high temperatures under ultrahigh vacuum conditions, to form an epitaxial film. Thus, contrary to the CVD processes described in the other articles, the MBE process is a physical method of thin film deposition.The vacuum requirements for the MBE process are typically better than 10−10torr. This makes it possible to grow epitaxial films with high purity and excellent crystal quality at relatively low substrate temperatures. Additionally, the ultrahigh vacuum environment allows the study of surface, interface, and bulk properties of the growing film in real time, by employing a variety of structural and analytical probes.Although the MBE deposition process was first proposed by Günther in 1958, its implementation had to wait for the development of the ultrahigh vacuum technology. In 1968 Davey and Pankey successfully grew epitaxial GaAs films by the MBE process. At the same time Arthur's work on the kinetics of GaAs growth laid the groundwork for the growth of high quality MBE films of GaAs and other III-V compounds by Arthur and LePore and Cho.

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Malikov, Vladimir N., Alexey V. Ishkov, Alexey A. Grigorev, Denis A. Fadeev, and Mihail A. Ryasnoi. "Investigation of Ni-Al Intermetallic Thin Films." Key Engineering Materials 854 (July 2020): 140–47. http://dx.doi.org/10.4028/www.scientific.net/kem.854.140.

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The article describes the results of studies of Ni-Al ultrathin films obtained by the resistive thermal evaporation method and having the characteristic dimensions of islands of 700-1000 nm with a film thickness of about 500 nm. This paper presents a method of obtaining a film using a unit for creating high vacuum and the subsequent deposition of the film. The obtained film sample was studied using an optical microscope, a scanning probe microscope and a Fourier analyzer. The kinetic characteristics of the film, the film relief, and the characteristic dimensions of the islands were established; the search for regularities in the island structure of films was carried out and its electrical conductivity was determined.

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Patil, M. M., K. P. Joshi, and S. B. Patil. "Studies on nanocomposites nanoplates and pervoskite nanorod thin films." YMER Digital 20, no. 12 (December 15, 2021): 303–13. http://dx.doi.org/10.37896/ymer20.12/27.

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Nano crystalline nickel oxide thin films of different film thickness were deposited onto glass substrate at 350 oC by varying volume of precursor solution using spray pyrolysis technique. This structural, morphological and microstructure properties were investigated using XRD, FE-SEM and TEM. The element composition was studied using EDAX. It is found that increase in the volume of sprayed solution leads to the increment in film thickness and amelioration of crystallinity of the film. The results are discussed and interpreted.

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Dhanasekaran, V., T. Mahalingam, S. Rajendran, Jin Koo Rhee, and D. Eapen. "Electroplated CuO Thin Films from High Alkaline Solutions." Journal of New Materials for Electrochemical Systems 15, no. 1 (December 6, 2011): 49–55. http://dx.doi.org/10.14447/jnmes.v15i1.88.

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CuO thin films were coated on ITO substrates by an electrodeposition route through potentiostatic mode. The electrodeposited CuO thin films were characterized and the role of copper sulphate concentration on the structural, morphological and optical properties of the CuO films was studied. Film thickness was measured by a stylus profilometer and found to be in the range between 800 and 1400 nm. The structural characteristics studies were carried out using X-ray diffraction and found that the films are polycrystalline in nature with a cubic structure. The preferential orientation of CuO thin films is found to be along (111) plane. The estimated microstructural parameters revealed that the crystallite size increases whereas the number of crystallites per unit area decreases with increasing film thickness. SEM studies show that the grain sizes of CuO thin films vary between 100 and 150 nm and also morphologies revealed that the electrodeposited CuO exhibits uniformity in size and shape. The surface roughness is estimated 15 nm of the CuO film were studied by atomic force microscopy. Optical properties of the films were analyzed from absorption and transmittance studies. The optical band gap energy was determined to be 1.5 eV from absorption coefficient. The variation of refractive index (n), extinction coefficient (k), with wavelength was studied and the results are discussed.

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David Theodore, N., Renu Sharma, and Juan Carrejo. "TEM/AFM correlative studies of thin-film metallization." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1414–15. http://dx.doi.org/10.1017/s042482010013170x.

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Since the invention of AFM (atomic force microscopy) applications of the technique have grown from year to year. It is expected that with time, there will be an increased use of AFM in the semiconductor industry for analysis of surface-topography and microstructure of thin films and heterostructures. However, before the technique can be used on its own for analyzing the behavior of thin films, it is necessary to establish legitimate areas of application of the technique. The present study uses AFM and TEM (transmission electron-microscopy) to study a few examples of thin-film metallizations and then looks at the extent of correlation between the two. It turns out that TEM and AFM work very well as complementary techniques. Caution is required in interpreting AFM micrographs.As examples of metallization Al(Cu), polysilicon and TiW thin films were investigated using AFM and TEM. Al(1.5%Cu) films were sputtered onto SiO2/Si substrates for ∼1 second (unbiased) at a substrate temperature of 450°C.

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Chamlek, Onanong, S. Pratontep, Teerakiat Kerdcharoen, and Tanakorn Osotchan. "Spectroscopys Studies of Iron Phthalocyanine Thin Films." Advanced Materials Research 55-57 (August 2008): 301–4. http://dx.doi.org/10.4028/www.scientific.net/amr.55-57.301.

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Iron phthalocyanine (FePc) thin films prepared by thermally evaporated from as received and purified powders were studied. The molecular interaction between FePc thin films and acetone vapor was studies by X-ray photoemission spectroscopy (XPS) and optical absorption spectrometer. The core level XPS spectra and optical absorption spectra showed slightly different between the spectra before and after acetone exposure. For FePc film evaporated with purified powder, only the Fe 2p3/2 spectra at about 712 eV appeared and the height of peak dramatically decreased. Iron K-edge X-ray absorption near edge structure (XANES) spectra was used to investigate iron atom in as received and purified powders and also study the interaction between FePc molecule and methanol vapor. The X-ray diffraction pattern of as received, annealed and purified FePc powder were investigated to study the crystal reformation and Raman spectroscopy was used to investigate iron atom vibration in as received FePc film.

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No, Kwangsoo, Dae Sung Yoon, and Jae Myung Kim. "SEM and Auger studies of a PLZT thin film." Journal of Materials Research 8, no. 2 (February 1993): 245–48. http://dx.doi.org/10.1557/jmr.1993.0245.

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The microstructure and the composition profile of lead lanthanum zirconate titanate thin film fabricated using the sol-gel method were analyzed using the scanning electron microscope and scanning Auger microscope. The PLZT thin film consists of micron-scale spheroidal perovskite grains and nano-scale pyrochlore grains. The perovskite grain has a higher lead and lower oxygen and zirconium contents than the pyrochlore grain. The Auger spectra of the two phases were similar except for energy shift and extra fine structure of oxygen peaks. The Auger depth profile and SEM observation of the cross-sectional fracture surface showed higher perovskite content near the interface between PLZT and ITO films than the surface of the PLZT film.

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Studenyak, I. P., M. Kranjčec, V. Yu Izai, V. I. Studenyak, M. M. Pop, and L. M. Suslikov. "Ellipsometric and Spectrometric Studies of (Ga0.2In0.8)2Se3 Thin Film." Ukrainian Journal of Physics 65, no. 3 (March 26, 2020): 231. http://dx.doi.org/10.15407/ujpe65.3.231.

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Thermal evaporation technique is used to deposite (Ga0,2In0,8)2Se3 thin films. The refractive index and extinction coefficient dispersions are obtained from the spectral ellipsometry measurements. The dispersion of the refractive index is described in the framework of the Wemple–Di Domenico model. The optical transmission spectra of a (Ga0,2In0,8)2Se3 thin film are studied in the temperature range 77–300 K. The temperature behavior of the Urbach absorption edge, as well as the temperature dependences of the energy pseudogap and Urbach energy, are investigated. The influence of different types of disordering on the optical absorption edge of a (Ga0,2In0,8)2Se3 thin film is discussed. Optical parameters of a (Ga0,2In0,8)2Se3 thin film and a single crystal are compared.

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Mäntymäki, Miia, Kenichiro Mizohata, Mikko J. Heikkilä, Jyrki Räisänen, Mikko Ritala, and Markku Leskelä. "Studies on Li3AlF6 thin film deposition utilizing conversion reactions of thin films." Thin Solid Films 636 (August 2017): 26–33. http://dx.doi.org/10.1016/j.tsf.2017.05.026.

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Arasu, P. Adal, and R. Victor Williams. "The dielectric studies on sol–gel routed molybdenum oxide thin film." Journal of Advanced Dielectrics 07, no. 02 (April 2017): 1750011. http://dx.doi.org/10.1142/s2010135x17500114.

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The influence of temperature on the dielectric properties of sol-gel routed spin-coated molybdenum trioxide (MoO[Formula: see text] thin film has been investigated. Prepared films were annealed at temperatures 250[Formula: see text]C, 350[Formula: see text]C and 400[Formula: see text]C. The phase transformation from amorphous to [Formula: see text]-orthorhombic phase with preferential orientation (0 2 2) has been found by XRD for the film annealed above 250[Formula: see text]C. The vibration modes of [Formula: see text]-orthorhombic MoO3 have been examined by Raman spectrum. The predominant Raman’s band of [Formula: see text]-orthorhombic MoO3 thin film has been found at the frequency range 1000–600[Formula: see text]cm[Formula: see text]. Using the UV–Vis spectrum, the band gap of the film is found to be 3.3–3.8[Formula: see text]eV. The surface morphology of the MoO3 films has been examined by scanning electron microscope. The AC conductivity measurement of the MoO3 film has been carried out in the frequency range 10–106 Hz. The frequency dependence of the impedance has been plotted in the complex plane. The variation of the capacitance and dielectric constant of MoO3 film with respect to temperature and frequency has been analyzed. Tunability of capacitance and figure of merit of the film are also determined.

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Lee, J. L., C. A. Weiss, R. A. Buhrman, and J. Silcox. "Electron Microscopy Studies of The Chemistry And Microstructure of BaF2 / YBa2Cu3O7-x Thin Films." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 796–97. http://dx.doi.org/10.1017/s0424820100171717.

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BaF2 thin films are being investigated as candidates for use in YBa2Cu3O7-x (YBCO) / BaF2 thin film multilayer systems, given the favorable dielectric properties of BaF2. In this study, the microstructural and chemical compatibility of BaF2 thin films with YBCO thin films is examined using transmission electron microscopy and microanalysis. The specimen was prepared by using laser ablation to first deposit an approximately 2500 Å thick (0 0 1) YBCO thin film onto a (0 0 1) MgO substrate. An approximately 7500 Å thick (0 0 1) BaF2 thin film was subsequendy thermally evaporated onto the YBCO film.Images from a VG HB501A UHV scanning transmission electron microscope (STEM) operating at 100 kV show that the thickness of the BaF2 film is rather uniform, with the BaF2/YBCO interface being quite flat. Relatively few intrinsic defects, such as hillocks and depressions, were evident in the BaF2 film. Moreover, the hillocks and depressions appear to be faceted along {111} planes, suggesting that the surface is smooth and well-ordered on an atomic scale and that an island growth mechanism is involved in the evolution of the BaF2 film.

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Čížek, Jakub, Marián Vlček, František Lukáč, Martin Vlach, I. Procházka, Gerhard Brauer, Wolfgang Anwand, et al. "Structural Studies of Nanocrystalline Thin Pd Films Electrochemically Doped with Hydrogen." Defect and Diffusion Forum 331 (September 2012): 137–47. http://dx.doi.org/10.4028/www.scientific.net/ddf.331.137.

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Hydrogen absorption in Pd causes a significant volume expansion. In free-standing bulk Pd, the hydrogen-induced volume expansion is isotropic. However, the situation becomes more complicated in thin Pd films. Contrary to bulk samples, thin films are clamped to an elastically stiff substrate, which prevents in-plane expansion. Hence, the volume expansion of a thin film is strongly anisotropic because it expands in the out-of-plane direction only. Internal stresses introduced by absorbed hydrogen may become so high that detachment of a film from the substrate is energetically favorable and buckles of various morphologies are formed. In the present work, we studied hydrogen-induced buckling in a nanocrystalline thin Pd film deposited on a sapphire substrate. Slow positron implantation spectroscopy (SPIS) was employed as a principal tool for the characterization of defects and investigation of defect interactions with hydrogen. SPIS studies were combined with X-ray diffraction and direct observations of buckling by light microscopy. It was found that buckling of thin Pd film occurs at hydrogen concentrations xH > 0.1 and is accompanied by a strong increase of dislocation density.

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Ryu, Donghyeon, and Alfred Mongare. "Corrugated Photoactive Thin Films for Flexible Strain Sensor." Materials 11, no. 10 (October 13, 2018): 1970. http://dx.doi.org/10.3390/ma11101970.

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In this study, a flexible strain sensor is devised using corrugated bilayer thin films consisting of poly(3-hexylthiophene) (P3HT) and poly(3,4-ethylenedioxythiophene)-polystyrene(sulfonate) (PEDOT:PSS). In previous studies, the P3HT-based photoactive non-corrugated thin film was shown to generate direct current (DC) under broadband light, and the generated DC voltage varied with applied tensile strain. Yet, the mechanical resiliency and strain sensing range of the P3HT-based thin film strain sensor were limited due to brittle non-corrugated thin film constituents. To address this issue, it is aimed to design a mechanically resilient strain sensor using corrugated thin film constituents. Buckling is induced to form corrugation in the thin films by applying pre-strain to the substrate, where the thin films are deposited, and releasing the pre-strain afterwards. It is known that corrugated thin film constituents exhibit different optical and electronic properties from non-corrugated ones. Therefore, to design the flexible strain sensor, it was studied to understand how the applied pre-strain and thickness of the PEDOT:PSS conductive thin film affects the optical and electrical properties. In addition, strain effect was investigated on the optical and electrical properties of the corrugated thin film constituents. Finally, flexible strain sensors are fabricated by following the design guideline, which is suggested from the studies on the corrugated thin film constituents, and the DC voltage strain sensing capability of the flexible strain sensors was validated. As a result, the flexible strain sensor exhibited a tensile strain sensing range up to 5% at a frequency up to 15 Hz with a maximum gauge factor ~7.

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Fujisawa, N., M. V. Swain, N. L. James, R. N. Tarrant, J. C. Woodard, and D. R. McKenzie. "Nanoindentation studies of brittle thin films on a titanium alloy substrate." Journal of Materials Research 17, no. 4 (April 2002): 861–70. http://dx.doi.org/10.1557/jmr.2002.0125.

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The mechanical properties of a range of tribological mitigating and biocompatible films deposited on a titanium alloy substrate have been investigated using nanoindentation. For a range of carbon films investigated, the ratio of hardness to modulus was almost constant at around 0.1. The onset of film–substrate interactions of a coated system upon progressive loading could be determined as the depth of penetration at which the slope of the force versus depth curve deviated from that of an analytically derived “bulk film” system that incorporated the indenter tip effect on the contact area. For the carbon-coated systems investigated, the corresponding force, or the critical load-carrying capacity of a localized contact event by a sharp indenter, appears to scale with the elastic modulus mismatch between film and substrate.

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Kraft, O., L. B. Freund, R. Phillips, and E. Arzt. "Dislocation Plasticity in Thin Metal Films." MRS Bulletin 27, no. 1 (January 2002): 30–37. http://dx.doi.org/10.1557/mrs2002.17.

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AbstractThis article describes the current level of understanding of dislocation plasticity in thin films and small structures in which the film or structure dimension plays an important role. Experimental observations of the deformation behavior of thin films, including mechanical testing as well as electron microscopy studies, will be discussed in light of theoretical models and dislocation simulations. In particular, the potential of applying strain-gradient plasticity theory to thin-film deformation is discussed. Although the results of all studies presented follow a “smaller is stronger” trend, a clear functional dependence has not yet been established.

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Song, Myeong-Ho, Woon-San Ko, Geun-Ho Kim, Dong-Hyeuk Choi, and Ga-Won Lee. "Studies on Oxygen Permeation Resistance of SiCN Thin Film and RRAM Applications." Nanomaterials 12, no. 23 (December 6, 2022): 4342. http://dx.doi.org/10.3390/nano12234342.

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In this study, a silicon carbon nitride (SiCN) thin film was grown with a thickness of 5~70 nm by the plasma-enhanced chemical vapor deposition (PECVD) method, and the oxygen permeation characteristics were analyzed according to the partial pressure ratio (PPR) of tetramethylsilane (4MS) to the total gas amount during the film deposition. X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR), and X-ray reflectivity (XRR) were used to investigate the composition and bonding structures of the SiCN film. An atomic force microscope (AFM) was used to examine the surface morphology of the SiCN films to see the porosity. The analysis indicated that Si–N bonds were dominant in the SiCN films, and a higher carbon concentration made the film more porous. To evaluate the oxygen permeation, a highly accelerated temperature and humidity stress test (HAST) evaluation was performed. The films grown at a high 4MS PPR were more susceptible to oxygen penetration, which changed Si–N bonds to Si–N–O bonds during the HAST. These results indicate that increasing the 4MS PPR made the SiCN film more porous and containable for oxygen. As an application, for the first time, SiCN dielectric film is suggested to be applied to resistive random access memory (RRAM) as an oxygen reservoir to store oxygen and prevent a reaction between metal electrodes and oxygen. The endurance characteristics of RRAM are found to be enhanced by applying the SiCN.

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Kassim, A., Z. Zainal, N. Saravanan, R. Vikneshwari, and S. Malathi. "Preparation and Studies of Electrodeposited CuSe Thin Films." Eurasian Chemico-Technological Journal 6, no. 2 (July 12, 2017): 107. http://dx.doi.org/10.18321/ectj598.

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Cathodic electrodeposition in the presence of sodium dodecyl-sulphate in aqueous solution was used to prepare CuSe thin film deposited on titanium substrates. The effect of deposition potential, concentration<br />and deposition time were studied to determine the optimum condition for the electrodeposition process. The films were characterized by X-ray diffractrometry. Scanning electron microscopy was used to study<br />the morphology of the deposits. The photoresponse of the films prepared was analysed using linear sweep voltammetry in the presence of sodium thiosulphate.

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Gao, Fei, Xiao Yan Liu, Li Yun Zheng, Mei Xia Li, and Rui Jiao Jiang. "Studies on the Microstructure and Properties of TiO₂/(Ag) Thin Films." Advanced Materials Research 503-504 (April 2012): 378–81. http://dx.doi.org/10.4028/www.scientific.net/amr.503-504.378.

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TiO2/(Ag) thin films were prepared by DC magnetron sputtering. The effects of Ag-doping on the microstructure and properties were compared studied by atomic force microscopy (AFM), X-ray diffraction (XRD), UV-Vis spectra and photocatalysis tesing, respectively. The results show that when doped with Ag, the surface of TiO2 thin film was improved and the growth of anatase phase was promoted. The absoption properties of Ag-doped TiO2 thin film was enhanced dramatically compared with that of TiO2 thin film. And the photocatalysis properties of Ag-doped TiO2 thin film was increased twice as well.

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Helan, P. Prathiba Jeya, K. Mohanraj, and G. Sivakumar. "Studies on structural, optical and electrical properties of electron beam evaporated Cu2SnSe3 thin films." Materials Science-Poland 34, no. 4 (December 1, 2016): 703–7. http://dx.doi.org/10.1515/msp-2016-0106.

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AbstractThe present work describes the deposition of semiconducting Cu2SnSe3 thin films by electron beam evaporation method. The structure of the deposited films was characterized by XRD and Raman analysis. X-ray diffraction study revealed that the Cu2SnSe3 thin films had a cubic sphalerite-like structure with crystallite size of 12 nm. Raman spectrum of the thin films confirmed the phase purity. FESEM analysis showed a continuous film with polydispersed grains of a diameter less than 1 цш and the elemental composition was confirmed by EDS spectrum. The UV-Vis spectrum revealed that the sample had high absorption in the visible region and the band gap was found to be 1.15 eV. The I-V graph exhibited the electrical resistivity and conductivity of the film as 2.13 Ω-cm and 0.468 S/cm, respectively. Thus, the electron beam evaporated Cu2SnSe3 thin films showed high purity of structure and good morphological, optical and electrical properties comparable with other methods of thin film deposition.

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Ma, Qing. "X-ray Scattering Studies of amorphous thin film materials." Acta Crystallographica Section A Foundations and Advances 70, a1 (August 5, 2014): C859. http://dx.doi.org/10.1107/s2053273314091402.

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In light of advances in detector technology, we revisit wide angle x-ray scattering techniques and their application to amorphous thin films that are of technological importance. For thin film materials the asymmetrical reflection geometry is employed to avoid the substrate signals. Incident x-ray angles are typically set close to the critical angles. There are various complications related to this geometry, in particular, raw scattering patterns being distorted. In addition, because these materials are typically weak scatterers due to disorder, increased data collection efficiency is always desired. Here, we report our activities using a 4-element vortex Si-drift detector for wide angle x-ray scattering experiments and present some experimental data collected on amorphous transparent conducting oxides.

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Xie, Jian Sheng, Ping Luan, and Jin Hua Li. "Optical Properties of Nano-CuInSi Thin Films Prepared by Multilayer Synthesized Method." Advanced Materials Research 403-408 (November 2011): 1094–98. http://dx.doi.org/10.4028/www.scientific.net/amr.403-408.1094.

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Thin Nano-CuInSi films have been prepared by multilayer synthesized method using magnetron sputtering technology, and followed by annealing in N2 atmosphere at different temperatures. The structures of CuInSi films were detected by X-ray diffraction(XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, the peak of main crystal phase is at 2θ=42.450°; the morphology of the film surface was studied by SEM. The SEM images show that the crystalline of the film prepared by multilayer synthesized method was granulated. The transmittance (T) spectra of the films were measured by Shimadzu UV-2450 double beam spectrophotometer. The calculated absorption coefficient is larger than 105 cm−1 when the wavelength is shorter than 750 nm. The band gap has been estimated from the optical absorption studies and found to be about 1.47 eV, but changes with purity of CuInSi. CuInSi thin film is a potential absorber layer material applied in solar cells and photoelectric automatic control.

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Dhanisha, K. M., M. Manoj Christopher, M. Abinaya, P. Deepak Raj, and M. Sridharan. "Studies on Magnetron-Sputtered NiO/Si3N4 Thin Films." International Journal of Nanoscience 17, no. 03 (May 21, 2018): 1760039. http://dx.doi.org/10.1142/s0219581x17600390.

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The present work deals with NiO/Si3N4 layers formed by depositing nickel oxide (NiO) thin films over silicon nitrate (Si3N[Formula: see text] thin films. NiO films were coated on Si3N4-coated Si substrate using magnetron sputtering method by changing duration of coating time and were analyzed using X-ray diffractometer, field emission-scanning electron microscopy, UV–Vis spectrophotometer and four-point probe method to study the influence of thickness on physical properties. Crystallinity of the deposited films increases with increase in thickness. All films exhibited spherical-like structure, and with increase in deposition time, grains are coalesced to form smooth surface morphology. The optical bandgap of NiO films was found to decrease from 3.31[Formula: see text]eV to 3.22[Formula: see text]eV with upsurge in the thickness. The film deposited for 30[Formula: see text]min exhibits temperature coefficient resistance of [Formula: see text]1.77%/[Formula: see text]C as measured at 80[Formula: see text]C.

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31

Wakiwaka, H., K. Tashiro, K. Ohtake, N. Itoh, T. Kiyomiya, and M. Makimura. "Kerr Microscopy Studies of SmFe Thin Film." Sensor Letters 7, no. 3 (June 1, 2009): 240–43. http://dx.doi.org/10.1166/sl.2009.1066.

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32

Abhyankar, N. M., R. N. Karekar, R. N. Prasad, T. S. Rao, and S. D. Phadke. "Studies of PbCl2 thin film galvanic cells." Thin Solid Films 151, no. 3 (August 1987): 325–32. http://dx.doi.org/10.1016/0040-6090(87)90131-3.

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33

Whitehead, Andrew J., and Trevor F. Page. "Nanoindentation studies of thin film coated systems." Thin Solid Films 220, no. 1-2 (November 1992): 277–83. http://dx.doi.org/10.1016/0040-6090(92)90585-y.

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34

Chen, Tze-Chiun, Tingkai Li, Xubai Zhang, and Seshu B. Desu. "Structure Development Studies of SrBi2(Ta1−xNbx)2O9 Thin Films." Journal of Materials Research 12, no. 8 (August 1997): 2165–74. http://dx.doi.org/10.1557/jmr.1997.0290.

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In this research, two tasks were pursued: (1) determination of the onset temperature of ferroelectric hysteresis properties of SrBi2Ta2O9 thin films by structure development study, and (2) low temperature processing for thin film fabrication. For task (1), a nondestructive optical method using spectroscopic ellipsometry was utilized for characterizing the structure development of SrBi2Ta2O9 thin films. The optical constants and film thickness were measured as a function of annealing temperature by spectroscopic ellipsometry. By observing the changes in refractive indices and film thickness, the temperatures of phase transformation and grain growth were determined. Consistent results were obtained from x-ray diffraction measurements. By comparing the results of the structure development study and ferroelectric hysteresis properties investigation, the onset temperature of the hysteresis curve of SrBi2Ta2O9 with 50% excess Bi was determined to be about 700 °C. The critical factor for the compound to exhibit a well-defined hysteresis curve was found to be the grain size. For task (2), the effects of excess Bi content and Nb/Ta ratio of SrBi2(Ta1−xNbx)2O9 on the ferroelectric hysteresisproperties were studied. It was found that the onset temperature for obtaining well-defined hysteresis properties can be reduced by adding excess Bi or increasing Nb/Ta ratio. By choosing SrBi2Nb2O9 with 50% excess Bi, the onset temperature of the hysteresis curve was reduced to about 650 °C.

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35

Larson, David J., Alfred Cerezo, Jean Juraszek, Kazuhiro Hono, and Guido Schmitz. "Atom-Probe Tomographic Studies of Thin Films and Multilayers." MRS Bulletin 34, no. 10 (October 2009): 732–37. http://dx.doi.org/10.1557/mrs2009.247.

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AbstractThis article reviews investigations of the growth and reactions within thin metal and oxide films using atom-probe tomography. Included in this review are (1) studies of interfacial and growth reactions in magnetoresistive metallic, metal/oxide, and magnetic magnetostrictive multilayers; (2) comparison of selected portions of these results to simulated film growth using molecular dynamics; and (3) study of the origin of room-temperature ferromagnetism in dilute magnetic semiconductors. Information of this type is useful in order to understand the formation and thermal evolution of thin films (and to compare to theory and modeling) and, ultimately, to permit further optimization of devices based on thin films.

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Xie, Jian Sheng, Jin Hua Li, and Ping Luan. "Copper Indium Silicon Nanocomposite Thin Film Deposited by Magnetron Co-Sputtering." Applied Mechanics and Materials 110-116 (October 2011): 3289–92. http://dx.doi.org/10.4028/www.scientific.net/amm.110-116.3289.

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Thin CuInSi nanocomposite films were prepared by magnetron co-sputtering. The structures of CuInSi nanocomposite films were detected by X-ray diffraction (XRD); XRD studies of the annealed films indicate the presence of CuInSi, a peak at about 2θ=42.400°. The morphology of the film surface was studied by SEM. The nanocrystallization with needle shape of CuInSi could be seen clearly. The grain size is a few hundred angstroms.

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37

Teodorescu, Valentin S., and Marie-Genevieve Blanchin. "Fast and Simple Specimen Preparation for TEM Studies of Oxide Films Deposited on Silicon Wafers." Microscopy and Microanalysis 15, no. 1 (January 15, 2009): 15–19. http://dx.doi.org/10.1017/s1431927609090011.

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AbstractWe present a fast and simple method to prepare specimens for transmission electron microscopy studies of oxide thin films deposited on silicon substrates. The method consists of scratching the film surface using a pointed diamond tip, in a special manner. Small and thin fragments are then detached from the film and its substrate. Depending on the scratching direction, the fragments can be used for plan-view or cross-section imaging. High-resolution images can be also obtained from thin edges of the film fragments. The method is demonstrated in the case of HfO2 sol-gel films deposited on [100] Si wafer substrates.

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Jiang, J. C., X. Q. Pan, Q. Gan, and C. B. Eom. "Domain Structure of Epitaxial SrRuO3 Thin Films on (001) LaA1O3." Microscopy and Microanalysis 4, S2 (July 1998): 578–79. http://dx.doi.org/10.1017/s1431927600023011.

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Epitaxial thin film of SrRuO3 is very useful in device applications, due to its important electrical and magnetic properties. For example, (Pb,Zr)TiO3 ferroelectric capacitors with SrRuO3 thin film electrodes exhibit superior fatigue and leakage characteristics. Epitaxial SrRuO3 thin films grown on different substrates, such as on (001) SrTiO3 and (001) LaA1O3, have different magnetic properties, owing to the different microstructures in the film. Microstructures in epitaxial SrRuO3 thin films grown on (001) SrTiO3 have been studied in our previously work. In this paper, microstructure of epitaxial SrRu03 thin films grown on (001) LaA103 is reported.SrRuO3 thin films on (001) LaA1O3 were deposited by 90° off-axis sputtering. For cross-section TEM studies the SrRuO3/LaA1O3 heterostructural samples were cut along the [100] direction of LaA103. The cut slides were glued face-to-face by joining the SrRu03 surfaces. Plan-view and cross-section TEM specimens were prepared by mechanical grinding, polishing and dimpling, followed by Ar-ion milling.

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Lee, Harold O., Muhammed Hasib, and Sam-Shajing Sun. "Proton Radiation Studies on Conjugated Polymer Thin Films." MRS Advances 2, no. 51 (2017): 2967–72. http://dx.doi.org/10.1557/adv.2017.389.

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ABSTRACTPolymeric thin film based electronic and optoelectronic materials and devices are attractive for potential space and certain radiation related applications due to their inherent features such as being light weight, flexible, biocompatible and environmental friendly, etc. Proton radiation is a major form of ionizing radiation in space, yet very few literature and data are available on proton radiation effects on conjugated polymer systems. In this study, UV-Vis absorption spectra of several conjugated polymers and/or their composite thin films were measured and compared right before and after a 200 MeV proton beam irradiation at different dosages, and the results revealed that proton radiation has very little or negligible impact up to 800 Rads on the optoelectronic properties of several polymers and their composite thin films.

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40

WURMEHL, SABINE, and JÜRGEN T. KOHLHEPP. "NMR SPECTROSCOPY ON HEUSLER THIN FILMS — A REVIEW." SPIN 04, no. 04 (December 2014): 1440019. http://dx.doi.org/10.1142/s2010324714400190.

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Heusler compounds exhibit different electronic ground states and functionalities, making them attractive materials for studies of their fundamental properties and for their technological exploitation. The high spin polarization, predicted in particular for Co 2-based Heusler compounds, renders them prime candidates for electrode materials in spintronic devices such as giant magnetoresistance (GMR) elements or magnetic tunnel junctions and requires their implementation in thin film stacks. The growth of high quality Heusler films, however, demands their careful characterization. Typical issues in Heusler thin films are, besides the type and degree of structural order, the control of the film composition and the conservation of smooth interfaces between different layers in the film, e.g., between the Heusler layer and the tunneling barrier, while at the same time enabling high structural order. This review illustrates how nuclear magnetic resonance spectroscopy contributes to those issues by discussing recent examples of nuclear magnetic resonance studies of Heusler thin films.

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41

Samuel, V., and V. J. Rao. "Optical and valence band studies of ZnP2 thin films." Journal of Materials Research 4, no. 1 (February 1989): 185–88. http://dx.doi.org/10.1557/jmr.1989.0185.

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Conditions have been developed for the preparation of ZnP2 and deposition of its stoichiometric thin films, using the flash evaporation technique. Structural properties of the ZnP2 obtained have been studied using x-ray diffraction, and chemical composition has been established by the polarography technique. Optical absorption of thin films of β–ZnP2 has been investigated over the range 1.2–3.2 eV. Analysis of thin film data showed that β–ZnP2 is a direct band gap material. The XPS and UPS of β–ZnP2 show a shift in binding energy (BE), which is due to transfer of electrons from zinc to phosphorus.

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42

Shu, Yuanjie, Liaoliang Ke, Jie Su, and Fei Shen. "Experimental Studies on Fretting Wear Behavior of PVDF Piezoelectric Thin Films." Materials 14, no. 4 (February 4, 2021): 734. http://dx.doi.org/10.3390/ma14040734.

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This paper discusses an in-depth experimental study on the fretting wear behavior of PVDF (polyvinylidene fluoride) piezoelectric thin film against a Si3N4 ceramic sphere under air conditions. A fretting wear device with a ball-on-plate contact configuration was applied. The changes of displacement amplitude, normal force, and applied voltage were taken into account. The friction logs were used to determine the contact state of the PVDF thin film during the fretting test. The 3D topography instrument and scanning electron microscope (SEM) were used to measure the details of the surface morphology and wear volume. The test results of PVDF thin films under different normal force, displacement amplitude, and applied voltage are summarized through the collection and analysis of experimental data. It is shown that the creep and plastic deformation lead to obvious winkles at the contact surface, which may decrease the specific wear rate of PVDF thin films.

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43

Wayne Goodman, D. "Surface spectroscopic studies of model supported-metal catalysts." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 394–95. http://dx.doi.org/10.1017/s0424820100138348.

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A new surface science approach to the study of supported-metal catalysts will be described. Thin oxide films (~100 Å) of SiO2, Al2O3, or MgO supported on a refractory metal substrate (e.g., Mo or W) have been prepared by depositing the oxide metal precursor in a background of oxygen (ca. l×l0-5 Torr) [1]. The thin-film catalysts facilitate investigation by an array of surface techniques, many of which are precluded when applied to the corresponding bulk oxide [1,2]. In particular, the oxide films have been characterized by AES, ELS, HREELS, XPS, UPS, ISS, IRAS, and TD spectroscopies and shown to have essentially identical electronic and vibrational properties of the corresponding bulk oxides. These studies indicate then that these films can serve as convenient models for oxide catalysts or metal supports. Metal thin films (e.g., Cu, Pd, Ni) have subsequently been deposited onto the oxide films and the properties of the metal/oxide system then studied with the above array of surface techniques [3]. By properly defining the metal thin film thickness, metal particles of varying sizes can be synthesized with dispersions from a few nanometers to tens of nanometers.

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44

Shajudheen, V. P. Muhamed, K. Anitha Rani, V. Senthil Kumar, A. Uma Maheswari, M. Sivakumar, and S. Saravana Kumar. "Optical and Corrosion Studies of Spray Pyrolysis Coated Titanium Dioxide Thin Films." Advanced Science Letters 24, no. 8 (August 1, 2018): 5836–42. http://dx.doi.org/10.1166/asl.2018.12206.

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In the present work, nanostructured thin films of titanium dioxide (TiO2) have been coated on the stainless steel (SS 304L) substrate by spray pyrolysis coating technique. The surface morphology and chemical constituents of the thin film have recorded using Field Effect Scanning Electron Microscopy (FESEM) and Energy Dispersive Analysis of X-rays (EDAX) respectively. The structural and optical properties of the films of as deposited were examined by Micro Raman, Photoluminescence Spectroscopy (PL) and UV-Vis absorption method. The FESEM micrograph showed the microporous nature of the film. EDAX spectrum illustrated the presence of Ti and O on the coated surface of the steel substrate. The peaks in the micro Raman spectrum indicated that the TiO2 samples of present study are in rutile phase of titanium dioxide. A strong emission peak around 350 nm was observed in the Photoluminescence spectrum of the samples. The anti-corrosion properties of the TiO2 coated samples were investigated by neutral salt spray test for 390 h. Electrochemical Impedance Spectroscopy (EIS) analysis and Tafel analysis were performed before and after salt spray test and the results suggested an increase of corrosion resistance of the titanium dioxide thin film in a corrosive environment. The positive shift of equilibrium corrosion potential (Ecorr) of bare stainless steel to thin film coated stainless steel (from −0.96 V to −0.38 V) in the electrochemical Tafel analysis implied the significant increase of corrosion resistance.

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45

Patel, K. J., M. S. Desai, and C. J. Panchal. "Studies of ZrO2 electrolyte thin-film thickness on the all-solid thin-film electrochromic devices." Journal of Solid State Electrochemistry 19, no. 1 (August 8, 2014): 275–79. http://dx.doi.org/10.1007/s10008-014-2600-2.

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46

Sheng, K. C., S. J. Lee, Y. H. Shen, X. K. Wang, E. D. Rippert, R. P. Van Duyne, J. B. Ketterson, and R. P. H. Chang. "Raman studies of reactive DC-magnetron sputtered thin films of YBaCuO on MgO." Journal of Materials Research 4, no. 6 (December 1989): 1312–19. http://dx.doi.org/10.1557/jmr.1989.1312.

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Raman spectroscopy was employed to study Y–Ba–Cu–O films prepared by multilayer, reactive sputtering from separate Y, Cu, and Ba0.5Cu0.5 targets. A set of films having the composition YxBa2CuyOz with 0.7 < x < 1.8 and 2.8 < y < 3.5 and critical temperature with zero resistance, Tc(R = 0), ranging from 25 to 90 K was studied with the Raman technique. The correlation between Raman data and critical temperature, Tc, was investigated. This technique provides important information concerning the film crystallinity, homogencity, and impurity content (including other phases) which is useful in judging the quality of high Tc superconducting films. We also found that the rapid thermal annealing process is a very efficient way to reduce chemical reactions between the film and the substrate.

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47

Niesen, T. P., M. R. De Guire, J. Bill, F. Aldinger, M. Rühle, A. Fischer, F. C. Jentoft, and R. Schlögl. "Atomic force microscopic studies of oxide thin films on organic self-assembled monolayers." Journal of Materials Research 14, no. 6 (June 1999): 2464–75. http://dx.doi.org/10.1557/jmr.1999.0331.

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The surface morphology of TiO2- and ZrO2-based thin films, deposited from aqueous solution at 70–80 °C onto functionalized organic self-assembled monolayers (SAMs) on silicon has been examined using atomic force microscopy (AFM). The films have been previously shown to consist, respectively, of nanocrystalline TiO2 (anatase) and of nanocrystalline tetragonal ZrO2 with amorphous basic zirconium sulfate. The films exhibit characteristic surface roughnesses on two length scales. Roughness on the nanometer scale appears to be dictated by the size of the crystallites in the film. Roughness on the micron scale is postulated to be related to several factors, including the topography of the SAM and the effects of larger, physisorbed particles or agglomerates. The topographies of the oxide thin films, on both the nanometer and micron scales, are consistent with a particle-attachment mechanism of film growth.

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48

Rodzi, A. S. M., Mohamad Hafiz Mamat, M. N. Berhan, and Mohamad Rusop Mahmood. "Stability Studies on Optical and Structure Properties of Zinc Oxide Thin Films Exposed to Different Environment." Advanced Materials Research 667 (March 2013): 549–52. http://dx.doi.org/10.4028/www.scientific.net/amr.667.549.

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The properties of zinc oxide thin films were prepared by sol-gel spin-coating method have been presented. This study based on optical and electrical properties of ZnO thin film. The effects of annealing temperatures that exposed with two environments properties have been investigated. Environments exposed in room (27°C) and hot (80°C) temperatures which are stored by various days. Solution preparation, thin film deposition and characterization process were involved in this project. The ZnO films were characterized using UV-Vis-NIR spectrophotometer for optical properties. From that equipment, the percentage of transmittance (%) and absorption coefficient spectra were obtained. With two environments showed have different absorption coefficient are reveal and all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties. From SEM investigations the surface morphology of ZnO thin film shows the particles size become smaller and denser in hot temperatures while in room temperatures have porosity between particles.

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49

Demczyk, B. G. "Domains and domain nucleation in magnetron-sputtered CoCr thin films." Proceedings, annual meeting, Electron Microscopy Society of America 51 (August 1, 1993): 1046–47. http://dx.doi.org/10.1017/s0424820100151064.

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CoCr thin films have been of interest for a number of years due to their strong perpendicular anisotropy, favoring magnetization normal to the film plane. The microstructure and magnetic properties of CoCr films prepared by both rf and magnetron sputtering have been examined in detail. By comparison, however, relatively few systematic studies of the magnetic domain structure and its relation to the observed film microstructure have been reported. In addition, questions still remain as to the operative magnetization reversal mechanism in different film thickness regimes. In this work, the magnetic domain structure in magnetron sputtered Co-22 at.%Cr thin films of known microstructure were examined by Lorentz transmission electron microscopy. Additionally, domain nucleation studies were undertaken via in-situ heating experiments.It was found that the 50 nm thick films, which are comprised of columnar grains, display a “dot” type domain configuration (Figure 1d), characteristic of a perpendicular magnetization. The domain size was found to be on the order of a few structural columns in diameter.

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Pantelić, N., A. Piruska, and Carl J. Seliskar. "Studies of the Dynamics of Thin Ion Exchange Films by Spectroscopic Ellipsometry and Attenuated Total Reflectance Spectroscopy." Materials Science Forum 518 (July 2006): 431–38. http://dx.doi.org/10.4028/www.scientific.net/msf.518.431.

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A chemically selective film, usually of optical quality, is a key component of optical and electrochemical sensors. We have examined the dynamics of various thin selective films by spectroscopic ellipsometry and attenuated total reflectance (ATR) spectroscopy. Spectroscopic ellipsometry provided a non-invasive method for measurement of optical constants (n(λ), refractive index; k(λ), extinction coefficient) and thicknesses of thin selective films which were conditioned in time by solvent and penetrant mass transport. The methods we have developed allowed us to characterize film dynamic response, stability, and chemically specific mass transport even to the point of quantitatively modeling both transport and structural changes. The ATR spectra of thin, highly absorbing films are distorted both by reflectance and interference phenomena. Enhanced absorbance was observed under film leaky mode conditions.

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Journal articles on the topic 'Thin film studies'

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