Relevant bibliographies by topics / Thin film studies

Academic literature on the topic 'Thin film studies'

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Published: 10 December 2022
Last updated: 28 January 2023

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Journal articles on the topic "Thin film studies"

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Jianqiang Gu, Jianqiang Gu, Changlei Wang Changlei Wang, Zhen Tian Zhen Tian, Feng Liu Feng Liu, Xueqian Zhang Xueqian Zhang, Jiaguang Han Jiaguang Han, Mingxia He Mingxia He, et al. "Systematic studies of terahertz metamaterials fabricated on thin Mylar film." Chinese Optics Letters 9, s1 (2011): s10404–310406. http://dx.doi.org/10.3788/col201109.s10404.

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Hwang, Young Kyu, Ajit Singh Mamman, K. R. Patil, Lee Kyung Kim, Jin Soo Hwang, and Jong San Chang. "Reflectometry Studies of Mesoporous Silica Thin Films." Solid State Phenomena 135 (February 2008): 31–34. http://dx.doi.org/10.4028/www.scientific.net/ssp.135.31.

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Reflectometry technique has been successfully applied to investigate the correlation between the porosity and optical property (refractive index) of the ordered mesoporous thin film deposited on silicon wafer substrates. The measured optical spectra were simulated by the Effective Medium approximation model. The reflectometry technique has been found to be appropriate for the measurement of thickness of thin films as well as thick layer films. The mesoporous silica films prepared from tri-block copolymer (F-127) as a surfactant and polypropylene oxide as a swelling agent were subsequently exposed to the ammonia vapors to enhance thermal stability and shrinkage minimization of the film that results in increased film thickness.
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Zhang, Yaoping, Hong Zhou, Junqi Fan, and Hong Xu. "Studies on properties of YbF3 thin film by different deposition parameters." Chinese Optics Letters 11, S1 (2013): S10215. http://dx.doi.org/10.3788/col201311.s10215.

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Balasundraprabhu, Rangasamy, E. V. Monakhov, N. Muthukumarasamy, and B. G. Svensson. "Studies on Nanostructure ITO Thin Films on Silicon Solar Cells." Advanced Materials Research 678 (March 2013): 365–68. http://dx.doi.org/10.4028/www.scientific.net/amr.678.365.

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Nanostructure ITO thin films have been deposited on well cleaned glass and silicon substrates using dc magnetron sputtering technique. The ITO films are post annealed in air using a normal heater setup in the temperature range 100 - 400 °C. The ITO film annealed at 300°C exhibited optimum transparency and resistivity values for device applications. The thickness of the ITO thin films is determined using DEKTAK stylus profilometer. The sheet resistance and resistivity of the ITO films were determined using four probe technique. Finally, the optimized nanostructure ITO layers are incorporated on silicon solar cells and the efficiency of the solar cell are found to be in the range 12-14%. Other solar cell parameters such as fill factor(FF), open circuit voltage(Voc),Short circuit current(Isc), series resistance(Rs) and shunt resistance(Rsh) have been determined. The effect of ITO film thickness on silicon solar cells is also observed.
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Subba Rao, K., R. Tamm, S. C. Wimbush, G. H. Cao, C. G. Oertel, Werner Skrotzki, and B. Holzapfel. "Texture Studies on Borocarbide Thin Films." Materials Science Forum 495-497 (September 2005): 1425–30. http://dx.doi.org/10.4028/www.scientific.net/msf.495-497.1425.

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Epitaxial thin films of the superconducting borocarbide compound YNi2B2C were grown on single crystal MgO (100) substrates without and with Y2O3 buffer layer using pulsed laser deposition (PLD). In both cases YNi2B2C grows with [001] normal to the substrate. However, the in-plane texture depends on the starting condition. For samples without buffer layer, oxygen from the substrate diffuses into the film and forms an Y2O3 reaction layer at the interface. As a consequence, a deficiency of Y is generated giving rise to the formation of secondary phases. On the other hand, using an artificial Y2O3 buffer layer secondary phases are suppressed. The texture of the Y2O3 layers determines the texture of the YNi2B2C film. The superconducting properties of the borocarbide films are discussed with respect to texture and phase purity.
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Mahalingam, T., V. Dhanasekaran, S. Rajendran, R. Chandramohan, Luis Ixtlilco, and P. J. Sebastian. "Electrosynthesis and Studies on CdZnSe Thin Films." Journal of New Materials for Electrochemical Systems 15, no. 1 (December 6, 2011): 37–42. http://dx.doi.org/10.14447/jnmes.v15i1.86.

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Electrodeposited CdZnSe thin films have been prepared at various bath temperatures. The thickness of the films was estimated between 850 nm and 1500 nm by stylus method. The X-ray diffraction patterns revealed that the polycrystalline nature with cubic structure of CdZnSe alloy thin films. Microstructural properties such as, crystallite size, dislocation density, microstrain and number of crystallites per unit area were calculated using predominant orientation of the films. SEM images revealed that the surface morphology could be tailored suitably by adjusting the pH value during deposition. The surface roughness of the film was estimated using topographical studies. Optical properties of the film were analyzed from absorption and transmittance studies. Optical band gap of the films increased from 1.67 to 1.72 eV with the increase of bath temperature from 30 to 90℃. The optical constants (refractive index (n) and extinction coefficient (k)) of CdZnSe thin films were evaluated using optical studies.
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Bharathi, B., S. Thanikaikarasan, P. V. Chandrasekar, Pratap Kollu, T. Mahalingam, and Luis Ixtlilco. "Studies on Electrodeposited NiS Thin Films." Journal of New Materials for Electrochemical Systems 17, no. 3 (October 3, 2014): 167–71. http://dx.doi.org/10.14447/jnmes.v17i3.417.

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Thin films of NiS have been deposited on indium doped tin oxide coated conducting glass substrates using electrodeposition technique. Structural studies revealed that the deposited films exhibit hexagonal structure with preferential orientation along (002) plane. Structural parameters such as crystallite size, strain and dislocation density are calculated for films with different thickness values obtained at various deposition time. The film composition and surface morphology have been analyzed using scanning electron microscopy and energy dispersive analysis by X-rays. Optical absorption analysis showed that the deposited films possess band gap value around 0.7 eV.
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Xie, Jian Sheng, Jin Hua Li, and Ping Luan. "Thin CuInSi Film Deposited by Magnetron Co-Sputtering." Advanced Materials Research 433-440 (January 2012): 302–5. http://dx.doi.org/10.4028/www.scientific.net/amr.433-440.302.

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Thin CuInSi films have been prepared by magnetron co-sputtering, and followed by annealing in N2 atmosphere at different temperatures. The structures of CuInSi films were detected by X-ray diffraction(XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, In2O3 and other peaks. The morphology of the film surface was studied by SEM. The band gap has been estimated from the optical absorption studies and found to be about 1.40 eV, but changes with purity of CuInSi. CuInSi thin film is a potential absorber layer material applied in solar cells and photoelectric automatic control.
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Moustakas, Theodore D. "Molecular Beam Epitaxy: Thin Film Growth and Surface Studies." MRS Bulletin 13, no. 11 (November 1988): 29–36. http://dx.doi.org/10.1557/s0883769400063892.

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Molecular Beam Epitaxy (MBE) is a thin film deposition process in which thermal beams of atoms or molecules react on the clean surface of a single-crystalline substrate, held at high temperatures under ultrahigh vacuum conditions, to form an epitaxial film. Thus, contrary to the CVD processes described in the other articles, the MBE process is a physical method of thin film deposition.The vacuum requirements for the MBE process are typically better than 10−10torr. This makes it possible to grow epitaxial films with high purity and excellent crystal quality at relatively low substrate temperatures. Additionally, the ultrahigh vacuum environment allows the study of surface, interface, and bulk properties of the growing film in real time, by employing a variety of structural and analytical probes.Although the MBE deposition process was first proposed by Günther in 1958, its implementation had to wait for the development of the ultrahigh vacuum technology. In 1968 Davey and Pankey successfully grew epitaxial GaAs films by the MBE process. At the same time Arthur's work on the kinetics of GaAs growth laid the groundwork for the growth of high quality MBE films of GaAs and other III-V compounds by Arthur and LePore and Cho.
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Malikov, Vladimir N., Alexey V. Ishkov, Alexey A. Grigorev, Denis A. Fadeev, and Mihail A. Ryasnoi. "Investigation of Ni-Al Intermetallic Thin Films." Key Engineering Materials 854 (July 2020): 140–47. http://dx.doi.org/10.4028/www.scientific.net/kem.854.140.

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The article describes the results of studies of Ni-Al ultrathin films obtained by the resistive thermal evaporation method and having the characteristic dimensions of islands of 700-1000 nm with a film thickness of about 500 nm. This paper presents a method of obtaining a film using a unit for creating high vacuum and the subsequent deposition of the film. The obtained film sample was studied using an optical microscope, a scanning probe microscope and a Fourier analyzer. The kinetic characteristics of the film, the film relief, and the characteristic dimensions of the islands were established; the search for regularities in the island structure of films was carried out and its electrical conductivity was determined.
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Dissertations / Theses on the topic "Thin film studies"

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McKinley, Iain Stewart. "Studies in thin film flows." Thesis, University of Strathclyde, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.366911.

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Boff, Arthur. "Electrochemical studies of thin-film diamond." Thesis, University of Oxford, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.496830.

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Inameti, E. E. "Thermal studies of thin film fuses." Thesis, University of Nottingham, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234026.

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Ullah, Hanif. "Simulation studies of photovoltaic thin film devices." Doctoral thesis, Universitat Politècnica de València, 2015. http://hdl.handle.net/10251/48800.

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To cope with energy requirements the utilization of renewable energies, particularly the Sun supplies the biggest and abundant energy source in Earth. Photo-voltaic and solar cell are the well advance and burning technology and a field of hot research. Majority of research centers and universities are working in this field. 1G, 2G, 3G and next generation of photo-voltaic cells have been developed and still to improve its efficiency and to decrease it 0.2 $/W cost. Our work mainly based on the theoretical and physical analysis of thin-film Photovoltaic devices. We will explore different software used for the analysis of PV cells, and will analyse different simulation related to solar cells like open circuit voltage VOC, Short circuit current JSC, Fill Factor FF (%) and external Quantum efficiency (%) for thin film solar cell including CIGS, CIS, CGS, CdTe, SnS/CdS/ZnO etc. To have different analysis for different combination and different replacement for materials used in the solar cell fabrication. To cope with the PV cost and environmental hazards we have to find alternate solutions.
Ullah, H. (2015). Simulation studies of photovoltaic thin film devices [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/48800
TESIS
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Yoshiikawa, Osamu. "Studies on organic thin film solar cells." Kyoto University, 2009. http://hdl.handle.net/2433/123895.

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Kyoto University (京都大学)
0048
新制・課程博士
博士(エネルギー科学)
甲第14742号
エネ博第195号
新制||エネ||44(附属図書館)
UT51-2009-D454
京都大学大学院エネルギー科学研究科エネルギー基礎科学専攻
(主査)教授 八尾 健, 教授 石原 慶一, 教授 辻井 敬亘
学位規則第4条第1項該当
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Gu, Erdan. "Studies in thin film systems and X-ray multilayer film design." Thesis, University of Aberdeen, 1992. http://digitool.abdn.ac.uk/R?func=search-advanced-go&find_code1=WSN&request1=AAIU547604.

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The design and optimization of soft X-ray multilayer film mirrors have been studied using optical theory. Our investigations show that the reflectivity of multilayer films is sensitive to their modulation wavelength and that their reflectivity can be improved by structural optimization. A new design method has been developed which can be used to increase the bandwidth and to change the shape of the reflectivity curves of multilayer film mirrors. Detailed studies of the formation and structure of practical vacuum deposited erbium(Er) thin film systems are presented. It was found that the phase and structure of these deposited films are strongly influenced by deposition conditions and film thickness. On the basis of these studies, very high purity low thicknesss erbium films (&'60 300 AA) with h.c.p. structure have be grown for the first time. The preferred orientation of crystallites and its dependence on deposition conditions in these erbium films are also investigated in detail. We have prepared Er/C multilayer films using the ultra high vacuum electron beam evaporation technique. The compositional periodic structure and intra-layer structure of these multilayer films have been studied using X-ray diffraction. The diffusion and short-range order formation occurring at the interfaces and within layers of C-Er thin-film systems and Er/C multilayer films were investigated by extended X-ray absorption fine structure technique (EXAFS).
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Newson, Pamela Lynn. "Studies of diamond film formation." Diss., Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/30529.

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Barnes, Jean-Paul L. P. Barnes. "TEM studies of thin film oxide/metal nanocomposites." Thesis, University of Oxford, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.398136.

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Whyte, Alex. "Thin film studies of planar transition metal complexes." Thesis, University of Edinburgh, 2013. http://hdl.handle.net/1842/7966.

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At present the field of molecular electronics - also known as molecular semiconductors, organic semiconductors, plastic electronics or organic electronics - is dominated by organic materials, both polymeric and molecular, with much less attention being focused on transition metal based complexes despite the advantages they can offer. Such advantages include tuneable frontier orbitals through the ligand/metal interaction and the ability to generate stable paramagnetic species. Devices containing radical materials are particularly interesting in order to examine the interplay between conduction and spin - an effect which is not yet properly understood but can give rise to exotic behaviour. A series of homoleptic, bis-ligand Ni(II) and Cu(II) complexes were prepared using three structurally related phenolic oxime ligands, 2-hydroxy-5-t-octylacetophenone oxime (t-OctsaoH), 2-hydroxy-5-n-propylacetophenone oxime (n-PrsaoH) and 2- hydroxyacetophenone oxime (HsaoH). The complexes were characterised by single-crystal X-ray diffraction, cyclic voltammetry, UV/Vis spectroscopy, field-effect-transistor measurements, DFT/TD-DFT calculations and in the case of the paramagnetic species, EPR and magnetic susceptibility. Variation of the substituent on the ligand from t-octyl to n-propyl to H enabled electronic isolation of the complexes in the crystal structures of M(t-OctsaoH)2, which contrasted with π-stacking interactions observed in the crystal packing of M(n-PrsaoH)2 and of M(HsaoH) (M = Ni, Cu). This was further evidenced by comparing the antiferromagnetic interactions observed in samples of Cu(n-PrsaoH)2 and Cu(HsaoH)2 with the ideal paramagnetic behaviour for Cu(t-OctsaoH)2 down to 1.8 K. Despite isostructural single crystal structures for M(n-PrsaoH)2, thin-film X-ray diffraction and SEM revealed different morphologies depending on the metal and the deposition method employed. However, the complexes of M(n-PrsaoH)2 and M(HsaoH) failed to demonstrate significant charge transport in an FET device despite displaying the ability to form π- stacking structures. A series of planar Ni(II), Cu(II) and Co(II) dibenzotetraaza[14]annulenes (dbtaa) and dinapthotetraaza[14]annulenes (dntaa) were synthesised and studied crystallographically, optically, electrochemically and magnetically. Thin films of each of these complexes have been prepared by vacuum deposition to evaluate the field-effect transistor (FET) performance as well as the morphology and crystallinity of the film formed. Single crystal data revealed that Ni(dbtaa) and Cu(dbtaa) are isomorphous to each other, with Co(dbtaa) displaying a different crystallographic packing. The electrochemistry and UV/Vis absorption studies indicate the materials are redox active and highly coloured, with molar extinction coefficients as large as 80,000 M-1cm-1 in the visible region. The paramagnetic Cu(II) and Co(II) complexes display weak 1-dimensional antiferromagnetic interactions and were fit to the Bonner-Fisher chain model. The data revealed that the Co(II) species possesses much stronger magnetic exchange interactions compared with the Cu(II) complex. Each of the materials formed polycrystalline films when vacuum deposited and all showed ptype field-effect transistor behaviour, with modest charge carrier mobilities in the range of 10-5 to 10-9 cm2 V-1 s-1 . SEM imaging of the substrates indicates that the central metal ion, and its sublimation temperature, has a crucial role in defining the morphology of the resulting film. Structurally related Cu(II) and Ni(II) dithiadiazoletetraaza[14]annulene (dttaa) macrocycles were synthesised and studied in the context of their thin film electrochemical, conducting and morphological properties. Both the Ni(II) and Cu(II) complexes were found to be volatile under reduced pressure, which allowed crystals of both materials to be grown and the single crystal structures solved. Interestingly, the crystal packing of these heterocyclic macrocycles varies depending on whether the central metal ion is Cu(II) or Ni(II), which is in contrast to the analogous dibenzotetrazaannulenes complexes. Soluble Ni(II) analogues containing benzoyl groups on the meso- positions of the macrocycle (dttaaBzOR) were also prepared and contrasted with the insoluble Ni(dttaa) complexes in terms of their solution optical and electrochemical properties. Thin film electrochemical studies of Cu(dttaa) and Ni(dttaa) showed chemically reversible oxidative processes but on scanning to reductive potentials the films disintegrated almost immediately as the bulky counter tetrabutylammonium cation entered the thin film. FET studies undertaken on polycrystalline films of both complexes, using various device configurations and surface treatments, failed to realise any gate effect. Thin film XRD measurements indicate that films of both complexes formed by vacuum deposition are crystalline and contain a mixture of molecular alignments, with molecules aligning “edge on” and “face down” to the substrate. SEM imaging failed to effectively resolve the morphology of the films implying the sizes of the crystallites are small, which may help to explain the lack of FET effect. A series of bis-ligand diimine Ni, Cu and Pd complexes have been synthesised from the ligand 4,5-bis(dodecyloxy)benzene-1,2-diamine (dbdaH2). The same ligand was also used to prepare a series of soluble Cu(II) and Ni(II) tetraaza[14]annulene macrocycles. All the bis-ligand diimine complexes were found to suffer from instability in air due to the ease at which the complexes are oxidised. The Ni complex, Ni(dbda)2, was found to display a NIR transition in the region of 971 to 1024 nm depending on the polarity of the solvent that the molecule is dissolved in. Solution electrochemistry studies of Ni(dbda)2 reaffirmed the facile nature of the first oxidative process, with the HOMO energy calculated at -4 eV by hybrid-DFT. This compound failed to yield semiconducting behaviour in an FET device despite the use of surface treatments aimed at promoting suitable molecular alignment across the conducting channel.
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Sethu, Murugesan. "Performance studies of thin film electroluminescent (TFEL) devices." Thesis, Nottingham Trent University, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.250453.

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Books on the topic "Thin film studies"

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Peng, Zhilong. Bio-inspired Studies on Adhesion of a Thin Film on a Rigid Substrate. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-46955-2.

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International Conference on Surface and Thin Film Studies Using Glancing-incidence X-ray and Neutron Scattering (1989 Marseille, France). X-ray and neutron scattering from surfaces and thin films: Proceedings of the International Conference on Surface and Thin Film Studies Using Glancing-incidence X-ray and Neutron Scattering : Marseille, France, May 31, June 1-2, 1989. Les Ulis, France: Editions de physique, 1989.

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Hussain, T. Magnetic anisotropy studies of TbFe thin films. Salford: University of Salford, 1990.

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Fernandez-Pacheco, Amalio. Studies of Nanoconstrictions, Nanowires and Fe₃O₄ Thin Films: Electrical Conduction and Magnetic Properties. Fabrication by Focused Electron/Ion Beam. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg, 2011.

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Li, Jian Ping. Studies of electrical properties of Cu/SiO thin films. Uxbridge: Brunel University, 1989.

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Edwards, Jacqueline Ann. Orientation studies of thin films of high temperature superconductors. Birmingham: University of Birmingham, 1994.

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Fernandez-Pacheco, Amalio. Studies of Nanoconstrictions, Nanowires and Fe₃O₄ Thin Films. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-15801-8.

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Feygenson, Mikhail. Magnetic and structural properties of thin films and nanoparticles studied by scattering methods. Jülich: Forschungszentrum Jülich, Zentralbibliothek, 2007.

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Attaran-Kakhki, Ebrahim. Magnetic, magnetic-optic and structural studies of PtMnSb thin films. Salford: University of Salford, 1989.

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Khatamian, Djamshid. Crystal structure of thin oxide films grown on Zr-Nb alloys studied by RHEED. Chalk River, Ont: Reactor Materials Research Branch, Chalk River Laboratories, 1996.

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Book chapters on the topic "Thin film studies"

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Haindl, Silvia. "Thin Film Studies Under Focus." In Iron-Based Superconducting Thin Films, 253–379. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-75132-6_6.

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Gibson, P. Neil. "Grazing Incidence X-Ray Methods for Near-Surface Structural Studies." In Surface and Thin Film Analysis, 311–27. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527636921.ch19.

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Dvoynenko, O. K., I. A. Kozlova, and V. M. Statsenko. "Thin Film Metal Matrixes for Biocorrosion Studies." In Nanostructured Materials and Coatings for Biomedical and Sensor Applications, 181–85. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-010-0157-1_19.

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Chusuei, Charles C., Xiaofeng Lai, Kai Luo, Qinlin Guo, and D. Wayne Goodman. "Preparation of Thin-Film Alumina for Catalytic Activity Studies." In Thin Films: Preparation, Characterization, Applications, 253–64. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0775-8_18.

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Ramaekers, P. P. J., D. Klepper, and A. Mackor. "Substrate-HTcS Thin Film Interaction Studies by (S)TEM." In Science and Technology of Thin Film Superconductors, 371–75. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5658-5_44.

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Tanner, D. B., N. Tache, S. L. Herr, K. Kamarás, C. D. Porter, D. B. Romero, S. Etemad, et al. "Infrared studies of laser-deposited high-Tc films." In Science and Technology of Thin Film Superconductors 2, 415. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-1345-8_60.

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Cohen, P. I., P. R. Pukite, and S. Batra. "Diffraction Studies of Epitaxy: Elastic, Inelastic and Dynamic Contributions to RHEED." In Thin Film Growth Techniques for Low-Dimensional Structures, 69–94. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4684-9145-6_5.

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Ramar, M., S. S. Rawat, R. Srivastava, and C. K. Suman. "AC Impedance Spectroscopy Studies of PtPc Doped Alq3 Thin Film." In Springer Proceedings in Physics, 383–90. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-44890-9_35.

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Baudenbacher, F., H. Karl, P. Berberich, and H. Kinder. "In-Situ Rheed Studies of Initial Growth Stages of YBCO-Films by Thermal Co-Evaporation." In Science and Technology of Thin Film Superconductors 2, 351–57. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-1345-8_51.

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Eesley, Gary L. "Picosecond Transient Thermoreflectance: Time-Resolved Studies of Thin Film Thermal Transport." In Review of Progress in Quantitative Nondestructive Evaluation, 253–62. Boston, MA: Springer US, 1987. http://dx.doi.org/10.1007/978-1-4613-1893-4_29.

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Conference papers on the topic "Thin film studies"

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He, Yihua, Guang Yang, Huanzhang Fan, Chun F. Xu, and Xuewen Wu. "1H NMR studies of PETEOS SiO2." In Thin Film Physics and Applications: Second International Conference, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1994. http://dx.doi.org/10.1117/12.190800.

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Wei, Shiqiang, Liwen Wu, Jie Bai, Chen Gao, and Wenhan Liu. "Structural studies of Mo/Si multilayers by EXAFS." In Thin Film Physics and Applications: Second International Conference, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1994. http://dx.doi.org/10.1117/12.190781.

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Rahman, Talat S., Chandana Gosh, Oleg Trushin, Abdelkader Kara, and Altaf Karim. "Atomistic studies of thin film growth." In Optical Science and Technology, the SPIE 49th Annual Meeting, edited by Akhlesh Lakhtakia and Sergey A. Maksimenko. SPIE, 2004. http://dx.doi.org/10.1117/12.560016.

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Chen, Z. H., T. Saitou, K. Shibata, Takashi Sato, Nobuhiro Takahashi, and Yasuo Oka. "Magneto-optical studies of ZnSe/Zn1-xMnxSe quantum wires." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408431.

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Kwok, T. K. "Photoluminescence studies of carbon- and oxygen-related radiation damage point defects in crystalline silicon." In Thin Film Physics and Applications: Second International Conference, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1994. http://dx.doi.org/10.1117/12.190745.

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Sangeetha, B. G., C. M. Joseph, and K. Suresh. "Performance studies on Ge1Sb2Te4 thin film devices." In TENCON 2015 - 2015 IEEE Region 10 Conference. IEEE, 2015. http://dx.doi.org/10.1109/tencon.2015.7373039.

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Nishio, Mitsuhiro, Kazuki Hayashida, Hiroki Harada, Yoshiaki Mitsuishi, Qixin Guo, and Hiroshi Ogawa. "Recent studies on ZnTe homoepitaxial films deposited by synchrotron-radiation-excited growth." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408420.

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Ritley, K. A., F. Schreiber, K. P. Just, Helmut Dosch, T. P. Niesen, and F. Aldinger. "Annealing studies of solution-deposited ZrO 2 thin films on self-assembled monolayers." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408486.

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Zeng, Qingkai, Linjun Wang, Jian Huang, Ke Tang, and Yiben Xia. "Studies on a novel structure of ZnO/AlN/ diamond for SAW device applications." In Seventh International Conference on Thin Film Physics and Applications, edited by Junhao Chu and Zhanshan Wang. SPIE, 2010. http://dx.doi.org/10.1117/12.888220.

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Smith, Bradley K., Craig D. Brown, Glen LaVigne, and Jeffry J. Sniegowski. "Thin Teflon-like films for MEMS: film properties and reliability studies." In Micromachining and Microfabrication, edited by James H. Smith. SPIE, 1998. http://dx.doi.org/10.1117/12.324289.

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Reports on the topic "Thin film studies"

1

Shannon, Robert R. Center for Thin Film Studies. Fort Belvoir, VA: Defense Technical Information Center, October 1988. http://dx.doi.org/10.21236/ada202742.

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Buhrman, R. A. High Resolution Studies of Thin Film Interfaces. Fort Belvoir, VA: Defense Technical Information Center, February 1998. http://dx.doi.org/10.21236/ada337921.

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Buhrman, R. A. High Resolution Studies of Thin Film Interfaces. Fort Belvoir, VA: Defense Technical Information Center, March 1998. http://dx.doi.org/10.21236/ada338838.

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Smith, B. K., G. LaVigne, J. J. Sniegowski, and C. D. Brown. Thin teflon-like films for MEMS: Film properties and reliability studies. Office of Scientific and Technical Information (OSTI), July 1998. http://dx.doi.org/10.2172/656699.

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Ast, D. G. Defect studies in thin film III-V thin film semiconductors. Progress report, September 1986--May 1987. Office of Scientific and Technical Information (OSTI), May 1987. http://dx.doi.org/10.2172/82405.

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Irene, Eugene A. Silicon Oxidation Studies on Thin Film Silicon Oxidation Formation. Fort Belvoir, VA: Defense Technical Information Center, March 1989. http://dx.doi.org/10.21236/ada206835.

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Dr. Wayne Huebner and Dr. Harlan U. Anderson. ANODE, CATHODE AND THIN FILM STUDIES FOR LOW TEMPERATURE SOFC'S. Office of Scientific and Technical Information (OSTI), November 1999. http://dx.doi.org/10.2172/772380.

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Ludwig, Karl. Real-Time X-ray Studies of Surface and Thin Film Processes. Office of Scientific and Technical Information (OSTI), April 2016. http://dx.doi.org/10.2172/1248336.

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Mamun, Md Abdullah. Thin film studies toward improving the performance of accelerator electron sources. Office of Scientific and Technical Information (OSTI), May 2016. http://dx.doi.org/10.2172/1411408.

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Nix, William D. Fundamental Studies of the Mechanical Behavior of Microelectronic Thin Film Materials. Fort Belvoir, VA: Defense Technical Information Center, March 1987. http://dx.doi.org/10.21236/ada179699.

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