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Journal articles on the topic 'Thin film stacking'

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Author: Grafiati
Published: 8 June 2024

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1

JIANG, B., J. L. PENG, L. A. BURSILL, and H. WANG. "MICROSTRUCTURE AND PROPERTIES OF FERROELECTRIC Bi4Ti3O12 THIN FILMS." Modern Physics Letters B 13, no. 26 (November 10, 1999): 933–45. http://dx.doi.org/10.1142/s0217984999001147.

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The film morphology and defect structure of ferroelectric bismuth titanate thin films are studied by high resolution transmission electron microscopy. As-grown and RTA-processed thin films have similar defect structures, consisting of stacking faults and complex intergrowth defect structures. The as-grown specimens prepared at low temperature had smaller particle size with higher density of these defects compared to RTA-processed samples. Detailed atomic structure models for the stacking faults and intergrowth defect structures are proposed and the computer-simulated images are compared with experiment.
2

Lee, Jin Woo, Yun Hae Kim, and Chang Wook Park. "Electrical and Optical Properties of ZnO:Ag Thin-Films Depend on Lamination Formation by DC Magnetron Sputtering." Advanced Materials Research 1110 (June 2015): 211–17. http://dx.doi.org/10.4028/www.scientific.net/amr.1110.211.

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Transparent conductive oxides such as Impurity doped indium oxides, tin oxides, zinc oxide systems are widely used in the field of optoelectronics such as Photo voltaic solar cells, Flat panel displays. Recently in case of the ZnO / Ag Multilayer thin films, doping Ag films on the ZnO layer and ZnO deposited on top of it a way that has been used. However, if thin film applied to the semiconductor, because of lamination of various forms, characteristics of stacking sequence and thin film layer is a need for research. In this study, using DC magnetron sputteirng how the stacking sequence of the film and the transparent operation of various process variables, the possibility of the application to electronic devices was confirmed.
3

Arnold, Marcel, Z. L. Wang, W. Tong, B. K. Wagner, S. Schön, and C. J. Summers. "Creation of Stacking Faults at Substrate Steps in Zns Thin Films Epitaxially Grown on GaAs (001)." Microscopy and Microanalysis 3, S2 (August 1997): 633–34. http://dx.doi.org/10.1017/s1431927600010059.

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Electroluminescence (EL)-based displays are an emerging technology for next generation flat panel displays. ZnS is an important component material for light emitting devices and EL-displays. To make this material useful for high efficiency and low voltage EL applications, the density of dislocations is required to be low. High quality single crystalline ZnS thin films have recently been grown by chemical beam epitaxy [1]. This paper focuses on studying the formation mechanism of stacking faults in the film and its relation with the interface structure between the substrate and the film [2].Stacking faults are the main defects present in the film (Fig. 1). All four stacking faults (sf) are intrinsic and sf1, growing towards the left-hand side from the interface, is only of short range since after crossing sf2 the defect is terminated by a Shockley partial dislocation and the normal stacking sequence is restored. This is the mechanism that annihilates most of the stacking faults generated from the interface within the first 70 nm thickness range.
4

McIntyre, P. C., and M. J. Cima. "Microstructural inhomogeneities in chemically derived Ba2YCu3O7−x thin films: Implications for flux pinning." Journal of Materials Research 9, no. 11 (November 1994): 2778–88. http://dx.doi.org/10.1557/jmr.1994.2778.

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A gradient in the density of polytypoidal stacking faults was observed through the thickness of chemically derived epitaxial Ba2YCu3O7−x (BYC) films on (001) LaAlO3. Cross-sectional TEM studies indicated that films of less than 100 nm thickness were faulted, with a high density of polytypoidal stacking faults. A decrease in stacking fault density in thicker films (300-500 nm thick) was found with increasing distance from the most defective layer near the film/substrate interface. An abrupt transition from highly faulted material near the substrate to essentially stacking fault-free BYC in the upper part of the films was observed in several cases. The present observations are compared with the previously reported1 decrease in critical current density with increasing thickness of these films. Possible implications for flux pinning in BYC thin films are discussed.
5

Liu, Y., B. W. Robertson, and D. J. Sellmyer. "HREM study of epitaxy in Co-Sm // Cr thin films." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 488–89. http://dx.doi.org/10.1017/s0424820100138816.

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In developing Co-based magnetic thin films for high density recording, it is well known that the Cr underlayer plays a critical role in generating large in-plane coercivity. Recently it has been shown that Co-Sm films with a nominal composition from Co4Sm to Co7Sm2 exhibit high coercivity and inplane anisotropy. Transmission electron microscopy studies of Co-Sm films have shown that the microstructure of a Co-Sm thin film is composed of the amorphous matrix and crystallites with a grain size of about 5 nm. The crystallites in the as-deposited Co-Sm films have a close-packed structure . Each crystallite has a particular stacking mode which consists of local random stacking, occasionally a few unit cells of two layer stacking AB, three layer stacking ABC, and four layer stacking ABAC. However, the epitaxy relation between the Co-Sm crystallites and the Cr, if any, remains a mystery. In this paper we report our discovery of a new epitaxial relation between the Co- Sm crystallites and the Cr underlayer.
6

Nguyen, Thang, Walter Varhue, Edward Adams, Mark Lavoie, and Stephen Mongeon. "Growth of heteroepitaxial GaSb thin films on Si(100) substrates." Journal of Materials Research 19, no. 8 (August 2004): 2315–21. http://dx.doi.org/10.1557/jmr.2004.0307.

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The heteroepitaxial growth of GaSb thin films on Si(100) and GaAs(100) substrates is presented. The growth technique involves the use of atomic Ga and Sb species, which are provided by thermal effusion and radio frequency sputtering, respectively. The crystalline quality of the heteroepitaxial GaSb film on the Si substrate is high despite the larger lattice mismatch. Epitaxial quality is determined by high-resolution x-ray diffraction and Rutherford backscatter spectrometry channeling. Atomic-force microscopy is used to monitor the evolution of surface morphology with increasing film thickness. Transmission electron microscopy shows the formation of stacking faults at the Si/GaSb interface and their eventual annihilation with increasing GaSb film thickness. Annihilation of stacking faults occurs when two next-neighbor mounds meet during the overgrowth of a common adjacent mound.
7

Wang, Xintai, Sara Sangtarash, Angelo Lamantia, Hervé Dekkiche, Leonardo Forcieri, Oleg V. Kolosov, Samuel P. Jarvis, et al. "Thermoelectric properties of organic thin films enhanced by π–π stacking." Journal of Physics: Energy 4, no. 2 (March 23, 2022): 024002. http://dx.doi.org/10.1088/2515-7655/ac55a3.

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Abstract Thin films comprising synthetically robust, scalable molecules have been shown to have major potential for thermoelectric energy harvesting. Previous studies of molecular thin-films have tended to focus on massively parallel arrays of discrete but identical conjugated molecular wires assembled as a monolayer perpendicular to the electrode surface and anchored via a covalent bond, know as self-assembled monolayers. In these studies, to optimise the thermoelectric properties of the thin-film there has been a trade-off between synthetic complexity of the molecular components and the film performance, limiting the opportunities for materials integration into practical thermoelectric devices. In this work, we demonstrate an alternative strategy for enhancing the thermoelectric performance of molecular thin-films. We have built up a series of films, of controlled thickness, where the basic units—here zinc tetraphenylporphyrin—lie parallel to the electrodes and are linked via π–π stacking. We have compared three commonly used fabrications routes and characterised the resulting films with scanning probe and computational techniques. Using a Langmuir-Blodgett fabrication technique, we successfully enhanced the thermopower perpendicular to the plane of the ZnTPP multilayer film by a factor of 10, relative to the monolayer, achieving a Seebeck coefficient of −65 μV K−1. Furthermore, the electronic transport of the system, perpendicular to the plane of the films, was observed to follow the tunnelling regime for multi-layered films, and the transport efficiency was comparable with most conjugated systems. Furthermore, scanning thermal microscopy characterisation shows a factor of 7 decrease in thermal conductance with increasing film thickness from monolayer to multilayer, indicating enhanced thermoelectric performance in a π–π stacked junction.
8

Tajari Mofrad, Mohammad Reza, Jaber Derakhshandeh, Ryoichi Ishihara, Alessandro Baiano, Johan van der Cingel, and Kees Beenakker. "Stacking of Single-Grain Thin-Film Transistors." Japanese Journal of Applied Physics 48, no. 3 (March 23, 2009): 03B015. http://dx.doi.org/10.1143/jjap.48.03b015.

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9

Wada, Takahiro, Takayuki Negami, and Mikihiko Nishitani. "Growth defects in CuInSe2 thin films." Journal of Materials Research 9, no. 3 (March 1994): 658–62. http://dx.doi.org/10.1557/jmr.1994.0658.

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CuInSe2 thin film solar cells with an efficiency of about 10% were studied with a cross-sectional high resolution transmission electron microscope (HRTEM). The growth defects such as twins, stacking faults, and intergrowth phase in the CuInSe2 thin films were studied in detail. Polycrystalline CuInSe2 films were deposited on a Mo-coated glass substrate by using the three source evaporation system. The CuInSe2 film contains fivefold multiply twinned crystallites as well as a high density of twins in the {112} plane. The CuInSe2 film also contains intergrowth phase with a long range of periodicities of 10 Å parallel to the [112] direction of the chalcopyrite structure. The intergrowth phase composition is similar to the chalcopyrite phase. The structural model of the intergrowth phase is proposed on the basis of the high resolution electron micrograph.
10

Hua, Zhong, Xiangcheng Meng, Yaming Sun, Wanqiu Yu, and Dong Long. "Properties of Cu2ZnSnS4 thin films prepared by magnetron sputtering and sulfurizing the precursors with different stacking sequences." Modern Physics Letters B 28, no. 26 (October 10, 2014): 1450210. http://dx.doi.org/10.1142/s0217984914502108.

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The stacked precursors were deposited on glass substrates from Cu , Sn and ZnS targets by magnetron sputtering with six kinds of stacking sequences. The precursors were sulfurized at 500°C for 2 h in an atmosphere of sulfur. The properties of thin films such as microstructure, morphology, chemical composition, electrical and optical properties of the films were investigated by X-ray diffraction (XRD), scanning election microscopy (SEM), energy dispersive spectroscopy (EDS), Hall effect measurements and UV-visible spectrophotometer (UV-VIS). The results show that the thin film after sulfurizing at 500°C using the stacking order of Cu / Sn / ZnS /glass is the best absorber layer for Cu 2 ZnSnS 4 thin films solar cell among the six kinds of stacking sequences.
11

Seo, Soon-Min, Changhoon Baek, and Hong H. Lee. "Stacking of Organic Thin Film Transistors: Vertical Integration." Advanced Materials 20, no. 10 (May 19, 2008): 1994–97. http://dx.doi.org/10.1002/adma.200701770.

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12

WANG, Y. R., J. A. KUBBY, and W. J. GREENE. "THIN FILM ELECTRON INTERFEROMETRY." Modern Physics Letters B 05, no. 21 (September 10, 1991): 1387–405. http://dx.doi.org/10.1142/s0217984991001696.

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Electron transport through thin overlayers of tin grown on a silicon substrate, and stacking-fault contrast in topographic and conductivity images of Si (111) – 7 × 7 are investigated. Resonances that depend on structural integrity of the overlayer are observed in the conductivity images, and are interpreted as consequences of electron standing-wave formation within the overlayer. The experimental spectra are analyzed using a one-dimensional model which has scattering potentials located at the sample surface and at the overlayer-substrate interface. The agreement between experiment and theory demonstrates that electron-standing wave spectra, in conjunction with bias-dependent topographic and conductivity images, are useful for probing details of buried interfaces formed by surface reconstruction and in heteroepitaxial growth.
13

Kong, G., M. O. Jones, J. S. Abell, P. P. Edwards, S. T. Lees, K. E. Gibbons, I. Gameson, and M. Aindow. "Microstructure of laser-ablated superconducting La2CuO4Fx thin films on SrTiO3." Journal of Materials Research 16, no. 11 (November 2001): 3309–16. http://dx.doi.org/10.1557/jmr.2001.0455.

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Thin films of lanthanum cuprate were grown on SrTiO3 substrates by pulsed laser deposition and made superconducting (Tc ∼ 38 K) through the process of post-deposition fluorination using elemental fluorine. A microstructural analysis showed that the [110] zone of the film grows parallel to the [100] zone of the SrTiO3 substrate, reducing the lattice mismatch from 37.5% to 2.4%. At the film–substrate interface there is an intermediate layer 3–4 nm thick and twin-related grains emanate from this region. Stacking faults are present in the bulk of the film, with misoriented subgrains present at the deposit surface.
14

Zeng, Shuang, Jing Yang, Qingqing Liu, Jiawei Bai, Wei Bai, Yuanyuan Zhang, and Xiaodong Tang. "Dielectric Spectroscopy of Non-Stoichiometric SrMnO3 Thin Films." Inorganics 12, no. 3 (February 27, 2024): 71. http://dx.doi.org/10.3390/inorganics12030071.

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The dielectric properties of non-stoichiometric SrMnO3 (SMO) thin films grown by molecular beam epitaxy were systematically investigated. Especially, the effects of cation stoichiometry-induced diverse types and densities of defects on the dielectric properties of SMO films were revealed. Two anomalous dielectric relaxation behaviors were observed at different temperatures in both Sr-rich and Mn-rich samples. High-temperature dielectric relaxation, resulting from a short-range Mn-related Jahn–Teller (JT) polaron hopping motion, was reinforced by an enhancement of JT polaron density in the Sr-rich film, which contained abundant SrO Ruddlesden–Popper (R-P) stacking faults. However, an excessive number of disordered Sr vacancy clusters in Mn-rich thin film suppressed the hopping path of JT polarons and enormously weakened this dielectric relaxation. Thus, The Sr-rich film demonstrated a higher dielectric constant and dielectric loss than the Mn-rich film. In addition, low-temperature dielectric relaxation may be attributed to the polarization/charge glass state.
15

Yan, Y., K. M. Jones, and M. M. Al-Jassim. "Transmission Electron Microscopy Study of Planar Defects in Polycrystalline CdTe Thin Films." Microscopy and Microanalysis 7, S2 (August 2001): 556–57. http://dx.doi.org/10.1017/s1431927600028853.

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CdTe is a promising photovoltaic material due to its near optimum band gap and high absorption coefficient. Polycrystalline, thin-film CdTe/CdS solar cells have demonstrated an efficiency of 15.8%. High density of extended defects is often found in polycrystalline CdTe films grown by close-spaced sublimation (CSS). So far, most investigations of defects in CdTe have focused on epitaxially grown films, and the reported extended defects are mainly lamellar twins. However, epitaxially grown films generally have a different microstructure compared to CSS grown polycrystalline CdTe thin films. in this paper, we report our study of extended defects in CSSgrown polycrystalline CdTe thin films by high-resolution transmission electron microscopy (HRTEM). We found that the extended defects are mostly lamellar twins and stacking faults. The stacking faults always propagate across the grains, without ending at a partial dislocation inside the grains.
16

Thanikaikarasan, S., T. Mahalingam, S. R. Srikumar, Tae Kyu Kim, Yong Deak Kim, Subramaniam Velumani, and Rene Asomoza. "Microstructural Characterization of Electro-Deposited CdSe Thin Films." Advanced Materials Research 68 (April 2009): 44–51. http://dx.doi.org/10.4028/www.scientific.net/amr.68.44.

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Thin films of CdSe were electrodeposited on tin oxide coated conducting glass substrates at various bath temperatures. The deposited films were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). X-ray diffraction studies revealed that the deposited films are found to be hexagonal structure with preferential orientation along (002) plane. The microstructural parameters such as crystallite size, R.M.S strain, dislocation density, stacking fault probability were calculated using x-ray line profile analysis technique. The variation of microstructural parameters with bath temperature and film thickness were studied and discussed.
17

Hee, Kwon Ahn, Young Ho Kim, Keun Gil Sang, Soo Paik Dong, and Dong Heon Kang. "Characteristics of Lead Free Ferroelectric Thin Films Consisted of (Na0.5Bi0.5)TiO3 and Bi4Ti3O12." Advanced Materials Research 684 (April 2013): 307–11. http://dx.doi.org/10.4028/www.scientific.net/amr.684.307.

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Ferroelectric thin films containing the same volume fraction of the perovskite structure (Na0.5Bi0.5)TiO3 (NBT) and layered structure Bi4Ti3O12 (BIT) were prepared with different stacking sequence. Na0.5Bi4.5Ti4O15 thin film, solid solution of NBT and BIT, was also synthesized to compare with the alternative layered films. Their crystal structure, microstructure and electrical properties were investigated as a function of number of interface. It was found that the interface area as well as each material property is critical to the electrical properties. The alternative layer thin films between NBT and BIT showed positive effect on the dielectric behavior than the single NBIT compound film.
18

Chakraborty, Jay, Tias Maity, Kishor Kumar, and S. Mukherjee. "Microstructure, Stress and Texture in Sputter Deposited TiN Thin Films: Effect of Substrate Bias." Advanced Materials Research 996 (August 2014): 855–59. http://dx.doi.org/10.4028/www.scientific.net/amr.996.855.

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Titanium nitride thin films deposited by reactive dc magnetron sputtering under various substrate bias voltages have been investigated by X-ray diffraction. TiN thin films exhibits lattice parameter anisotropy for all bias voltages. Preferential entrapment of argon atoms in TiN lattice has been identified as the major cause of lattice parameter anisotropy. Bombardment of argon ions during film growth has produced stacking faults on {111} planes of TiN crystal. Stacking fault probability increases with increasing substrate bias voltages. X-ray diffraction line profile analysis indicates strain anisotropy in TiN thin films. Diffraction stress analysis by d-sin2ψ method reveals pronounced curvature in the plot of inter-planar spacing (d) (or corresponding lattice parameter (a)) versus sin2ψ. Direction dependent elastic grain interaction has been considered as possible source of the observed anisotropic line broadening.
19

Huang, T. C., A. Segmuller, W. Lee, V. Lee, D. Bullock, and R. Karimi. "X-ray Diffraction Analysis of High Tc Superconducting Thin Films." Advances in X-ray Analysis 32 (1988): 269–78. http://dx.doi.org/10.1154/s0376030800020577.

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AbstractX-ray diffraction techniques have been used for the structure characterization of Y-Ba-Cu-O and Tl-Ca-Ba-Cu-O thin films. A powder diffraction analysis of Y-Ba-Cu-O films showed that the films deposited at 650°C on Si are polycrystalline and have an orthorhambic structure similar to that of the YBa2Cu3O7 bulk superconductors. In addition to the conventional powder diffraction technique, both the rocking curve and the grazing incidence diffraction methods were used to characterize a YBa2Cu3O7 film on (110) SrTiO3 substrate. Results showed that the film was epitaxially grown and aligned with its substrate in a true epitaxy. Phase identification and line broadening analyses of Tl-Ca-Ba-Cu-O films showed that the films are comprised of one or more superconducting phases and probably contain stacking faults.
20

Wen, J. G., C. Traeholt, and H. W. Zandbergen. "Stacking sequence of YBa2Cu3O7 thin film on SrTiO3 substrate." Physica C: Superconductivity 205, no. 3-4 (February 1993): 354–62. http://dx.doi.org/10.1016/0921-4534(93)90402-c.

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21

Lei, Chao, Shu Chen, and Allan H. MacDonald. "Magnetized topological insulator multilayers." Proceedings of the National Academy of Sciences 117, no. 44 (October 19, 2020): 27224–30. http://dx.doi.org/10.1073/pnas.2014004117.

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We discuss the magnetic and topological properties of bulk crystals and quasi–two-dimensional (quasi-2D) thin films formed by stacking intrinsic magnetized topological insulator (for example, Mn (SbxBi1−x)2X4with X = Se,Te) septuple layers and topological insulator quintuple layers in arbitrary order. Our analysis makes use of a simplified model that retains only Dirac cone degrees of freedom on both surfaces of each septuple or quintuple layer. We demonstrate the model’s applicability and estimate its parameters by comparing with ab initio density-functional theory (DFT) calculations. We then employ the coupled Dirac cone model to provide an explanation for the dependence of thin-film properties, particularly the presence or absence of the quantum anomalous Hall effect, on film thickness, magnetic configuration, and stacking arrangement, and to comment on the design of Weyl superlattices.
22

Zhou, Jing, Jie Zhu, Wen Chen, Jie Shen, Qiong Lei, and Hui Min He. "Effect of Stacking Layers on the Structure and Properties of Ca(Mg1/3Nb2/3)O3 / CaTiO3 Thin Films." Key Engineering Materials 421-422 (December 2009): 115–18. http://dx.doi.org/10.4028/www.scientific.net/kem.421-422.115.

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Effect of stacking layers on the structure and properties of Ca(Mg1/3Nb2/3)O3/CaTiO3 (CMN/CT) microwave dielectric heterogeneous thin films prepared was investigated. Precursor solutions for CMN and CT synthesis were obtained by Pechini method. The arrangement pattern has affected structure and properties of heterogeneous thin film. The CMN-CT arrangement heterostructure thin film has second phase from the CMN films layer. The CT-CMN heterostructure film which has a smooth and dense microstructure was composed of pure perovskite phase without any second phase, this result was attributed to the CT film layer which is a buffer layer between substrate and CMN film layer. At 1MHz frequency, CT-CMN exhibits the dielectric properties of εr=47.5, tanδ=0.020.
23

Robertson, B. W., and Y. Liu. "Stacking sequences of the crystallites in Co-Sm films." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 714–15. http://dx.doi.org/10.1017/s0424820100166038.

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Magnetic thin films sputtered from the Co-Sm system have been shown to be promising as recording media. High coercivities of up to 4.0 kOe have been obtained from Co-Sm films. Recent microstructure characterization of Co-Sm films deposited by the DC magnetron sputtering has shown that the microstructure is composed of the amorphous matrix and crystallites with a grain size of about 5nm . As different sputtering processes have different dynamics for the formation of the nanostructure, phases formed could be different from those predicted by the equilibrium phase diagram. Crystal structure determination is important for understanding the high anisotropy and epitaxy growth of the Co-Sm films. The crystal structure of the crystallites was identified to be a close-packed structure. However, the stacking sequence changes from crystallite to crystallite. This paper describes the detailed high resolution electron microscopy (HREM) study of the stacking sequence of the crystallites in Co-Sm films. It is found that the stacking near the Cr underlayer tends to be hexagonal (ABAB) stacking. As the film grows, the stacking sequence is disturbed and three layer stacking, four layer stacking and random stacking are formed.
24

Yoneya, Makoto, Satoshi Matsuoka, Jun’ya Tsutsumi, and Tatsuo Hasegawa. "Self-assembly of donor–acceptor semiconducting polymers in solution thin films: a molecular dynamics simulation study." Journal of Materials Chemistry C 5, no. 37 (2017): 9602–10. http://dx.doi.org/10.1039/c7tc01014a.

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25

Nordin, Norfaizul Izwan, Rosminazuin Ab Rahim, and Aliza Aini Md Ralib. "Flexible PVDF thin film as piezoelectric energy harvester." Bulletin of Electrical Engineering and Informatics 8, no. 2 (June 1, 2019): 443–49. http://dx.doi.org/10.11591/eei.v8i2.1423.

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This aim of this paper is to study the potential of Polyvinylidene Fluoride (PVDF) polymeric piezoelectric film as an energy harvester for daily application use. PVDF offers several advantages over other piezoelectric materials such as high chemical strength and stability, high piezoelectric properties and biocompatible. Several investigations were carried out in this project which comprises of simulation, functionality test and application test. For functionality test, the highest voltage produced for a single film PVDF is 0.368 V which charges up a capacitor to 0.219 V in one minute. The highest voltage produced by multiple PVDF films is 1.238 V by stacking 10 films of PVDF in parallel which charges up to 0.688 V in one minute. For application test, 5 pieces of PVDF films were attached to a glove to generate some voltage during fingers bending activity. The highest output voltage recorded is 0.184 V which stores 0.101 V in a capacitor after 200 times of hand bending and releasing. As a conclusion, PVDF has a good potential as an alternative energy for daily application use. Combination of PVDF energy harvester system with proper power optimization circuit will open up rooms of research opportunities in energy harvester system with promising prospect in self-powered wireless electronics devices for Internet of Things application.
26

Hsu, Chih-Chieh, Po-Tsun Liu, Kai-Jhih Gan, Dun-Bao Ruan, and Simon M. Sze. "Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film." Nanomaterials 11, no. 9 (August 27, 2021): 2204. http://dx.doi.org/10.3390/nano11092204.

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In this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen flow during the sputtering process, the IWZO film can be fabricated with different oxygen concentrations and different oxygen vacancy distribution. In addition, the electrical characteristics of CBRAM device with different oxygen concentration are compared and further analyzed with an atomic force microscope and X-ray photoelectron spectrum. Furthermore, a stacking structure with different bilayer switching is also systematically discussed. Compared with an interchange stacking layer and other single layer memory, the CBRAM with specific stacking sequence of bilayer oxygen-poor/-rich IWZO (IWZOx/IWZOy, x < y) exhibits more stable distribution of a resistance state and also better endurance (more than 3 × 104 cycles). Meanwhile, the memory window of IWZOx/IWZOy can even be maintained over 104 s at 85 °C. Those improvements can be attributed to the oxygen vacancy distribution in switching layers, which may create a suitable environment for the conductive filament formation or rupture. Therefore, it is believed that the specific stacking bilayer IWZO CBRAM might further pave the way for emerging memory applications.
27

Jo, Yongjin, Jonghan Lee, Chaewon Kim, Junhyeok Jang, Inchan Hwang, John Hong, and Mi Jung Lee. "Engineered molecular stacking crystallinity of bar-coated TIPS-pentacene/polystyrene films for organic thin-film transistors." RSC Advances 13, no. 4 (2023): 2700–2706. http://dx.doi.org/10.1039/d2ra05924j.

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In this study, polymer blended organic thin-film transistors were fabricated using the bar-coating method. The improvement is attributed to the morphology and molecular stacking of TIPS-pentacene, inducing favorable charge transfer condition.
28

Marshall, A. F., K. Char, R. W. Barton, A. Kapitulnik, and S. S. Laderman. "Microstructural interaction of Y2Ba4Cu8O16 stacking faults within YBa2Cu3O7−x." Journal of Materials Research 5, no. 10 (October 1990): 2049–55. http://dx.doi.org/10.1557/jmr.1990.2049.

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A transmission electron microscopy study of a post-annealed YBa2Cu3O7−x thin film shows that extra Cu–O planes within the structure can aggregate as stacking faults to form a defect microstructure rather than forming the well-ordered Y2Ba4Cu8O16 phase. Interaction of the stacking faults with the surrounding matrix results in strain effects and microstructural variations which may hinder ordering as well as influencing superconducting properties if occurring in higher concentration. When viewed normal to the plane of the film, the boundaries of the stacking faults can be imaged as dislocation-like defects, indicating the size and shape of the stacking faults and their relationship to other defects such as twins and second phase precipitates.
29

Yuk, J. M., J. Y. Lee, T. W. Kim, D. I. Son, and W. K. Choi. "Effects of thermal annealing on the microstructural properties of the lower region in ZnO thin films grown on n-Si (001) substrates." Journal of Materials Research 23, no. 4 (April 2008): 1082–86. http://dx.doi.org/10.1557/jmr.2008.0141.

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Transmission electron microscopy (TEM) images, selected-area electron-diffraction patterns, high-resolution TEM images, and x-ray energy dispersive spectroscopy line scans for the ZnO/n-Si (001) heterostructures annealed at 900 °C showed that stacking faults and amorphous layers were formed in the lower region of the ZnO films. The stacking faults existing in the lower region of the ZnO columnar grains originated from the formation of zinc vacancy layers caused by the thermal treatment, resulting in the existence of a tensile strain. The formation of the amorphous layer in the ZnO film was attributed to the accumulation of zinc vacancy layers.
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Harada, T., T. Nagai, M. Oishi, and Y. Masahiro. "Sputter-grown c-axis-oriented PdCoO2 thin films." Journal of Applied Physics 133, no. 8 (February 28, 2023): 085302. http://dx.doi.org/10.1063/5.0136749.

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Metallic delafossites, ABO2 ( A = Pd or Pt), are layered oxides that are as conductive as elemental metals. The high conductivity and surface polarity make metallic delafossites fascinating electrode materials for heterostructure devices. Here, we report the successful growth of c-axis-oriented PdCoO2 thin films on Al2O3 (001) substrates by magnetron sputtering that is widely used in industries. The observation of the PdCoO2 thin films through scanning transmission electron microscopy revealed layered crystal structures. A sharp interface exhibiting a layer stacking sequence of Pd/CoO2/Al2O3 was observed clearly, similar to the interfaces obtained with other growth methods such as pulsed laser deposition and molecular beam epitaxy. This layer stacking is particularly interesting because it can induce a high work function at the interface. The in-plane resistivity of the as-grown PdCoO2 thin film was 73 μΩ cm at room temperature, which decreased to 11 μΩ cm after post-annealing. The residual resistivity ratio of the annealed thin films was approximately 2.9. The impurity phases of PdO x were observed using x-ray diffraction and scanning transmission electron microscopy. The sputtering deposition of c-axis-oriented thin films could lead to the practical application of the polar surface of PdCoO2 in semiconductor devices.
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Hatton, Peter, Ali Abbas, Piotr Kaminski, Sibel Yilmaz, Michael Watts, Michael Walls, Pooja Goddard, and Roger Smith. "Inert gas bubble formation in magnetron sputtered thin-film CdTe solar cells." Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences 476, no. 2239 (July 2020): 20200056. http://dx.doi.org/10.1098/rspa.2020.0056.

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Cadmium telluride (CdTe) solar cells are deposited in current production using evaporation-based tech- niques. Fabricating CdTe solar cells using magnetron sputtering would have the advantage of being more cost-efficient. Here, we show that such deposition results in the incorporation of the magnetron working gas Ar, within the films. Post deposition processing with CdCl 2 improves cell efficiency and during which stacking faults are removed. The Ar then accumulates into clusters leading to the creation of voids and blisters on the surface. Using molecular dynamics, the penetration threshold energies are determined for both Ar and Xe, with CdTe in both zinc-blende and wurtzite phases. These calculations show that more Ar than Xe can penetrate into the growing film with most penetration across the (111) surface. The mechanisms and energy barriers for interstitial Ar and Xe diffusion in zinc-blende are determined. Barriers are reduced near existing clusters, increasing the probability of capture-based cluster growth. Barriers in wurtzite are higher with non-Arrhenius behaviour observed. This provides an explanation for the increase in the size of voids observed after stacking fault removal. Blister exfoliation was also modelled, showing the formation of shallow craters with a raised rim.
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Walls, J. M., A. Abbas, G. D. West, J. W. Bowers, P. J. M. Isherwood, P. M. Kaminski, B. Maniscalco, W. S. Sampath, and K. L. Barth. "The Effect of Annealing Treatments on Close Spaced Sublimated Cadmium Telluride Thin Film Solar Cells." MRS Proceedings 1493 (2013): 147–52. http://dx.doi.org/10.1557/opl.2012.1704.

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ABSTRACTIt is well known that the cadmium chloride annealing treatment is an essential step in the manufacture of efficient thin film cadmium telluride solar cells. It has been recognized that the combination of annealing at ∼4000C together with the addition of cadmium chloride at the surface induces re-crystallisation of the cadmium telluride layer and also affects the n-type cadmium sulfide. We have applied advanced micro-structural characterization techniques to distinguish the effect of the annealing and the cadmium chloride treatments on the properties of the cadmium telluride deposited via close space sublimation (CSS) and relate these observations to device performance. Transmission electron microscopy (TEM) has shown a variation in stacking fault density with annealing temperature and annealing time. Stacking faults observed within the cadmium telluride grains in TEM were partially removed post annealing; these findings show that temperature alone has a role in the reduction of stacking faults. However, since we have previously observed almost complete removal of stacking faults with annealing in combination with cadmium chloride, the cadmium chloride is essential to defect removal and high efficiency cells.
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Lee, Junho, Jaeyong Kim, and Myeongkyu Lee. "High-purity reflective color filters based on thin film cavities embedded with an ultrathin Ge2Sb2Te5 absorption layer." Nanoscale Advances 2, no. 10 (2020): 4930–37. http://dx.doi.org/10.1039/d0na00626b.

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Huo, Xiaoye, Zhenhai Wang, Mengqi Fu, Jiye Xia, and Shengyong Xu. "A sub-200 nanometer wide 3D stacking thin-film temperature sensor." RSC Advances 6, no. 46 (2016): 40185–91. http://dx.doi.org/10.1039/c6ra06353e.

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We presented a 3D stacking thin-film temperature sensor with a total width down to 140 nm, a temperature resolution of 40–100 mK, and repeatable sensitivities of 9.6 ± 0.7 μV K−1 and 3.6 ± 0.1 μV K−1 for Cr/Pd and Au/Pd sensors with varied junction size.
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Del Caño, T., J. Duff, and R. Aroca. "Molecular Spectra and Molecular Organization in Thin Solid Films of Bis(Neopentylimido) Perylene." Applied Spectroscopy 56, no. 6 (June 2002): 744–50. http://dx.doi.org/10.1366/000370202760077478.

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The synthesis, molecular spectra, and thin solid film properties of a perylene dye, bis(neopentylimido) perylene (BNPTCD),§ are reported. Absorption and emission molecular spectra are used to probe the structure of vacuum-evaporated thin films and Langmuir–Blodgett monolayers of BNPTCD. The experimental assignment of electronic, infrared, and Raman spectra are aided with calculated molecular structure and spectra using density functional theory (DFT) and Hartree–Fock (HF) computational methods at 6–31G level of theory. Characteristic vibrational modes and local symmetry of the planar perylene tetracarboxylic chromophore (PTCD) are used to extract molecular organization and film packing properties from spectral data collected using transmission and reflection-absorption (RAIRS) infrared spectroscopy. From the infrared spectra, using surface selection rules and polarization properties, it was extracted that the PTCD plane in BNPTCD is organized in the evaporated film with the plane head-on tilted over the substrate. After the molecular organization was identified, the effect of thermal annealing and solvent vapors on the film structure was examined. It is found that the PTCD plane turns to a flat-on orientation when the film is thermal annealed or solvent treated. The aggregation and molecular stacking in films was also inspected using the electronic absorption and fluorescence of monomers and aggregates.
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Raineri, Vito, Corrado Bongiorno, Salvatore di Franco, Raffaella Lo Nigro, Emanuele Rimini, and Filippo Giannazzo. "Surface Corrugation and Stacking Misorientation in Multilayers of Graphene on Nickel." Solid State Phenomena 178-179 (August 2011): 125–29. http://dx.doi.org/10.4028/www.scientific.net/ssp.178-179.125.

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Graphene films were grown on thin polycrystalline Ni using a buried amorphous carbon (a-C) layer as C source. Rapid thermal processes (RTP) at temperatures from 600 to 800°C were used to promote C diffusion into Ni and its subsequent segregation on Ni surface, during the sample cool down. RTP at 800°C was the optimal condition for graphene film formation. Micro-Raman spectroscopy showed that the grown film is mostly composed by multilayers of graphene. Atomic force microscopy showed that the film presents peculiar corrugations (wrinkles), isotropically oriented and with heights ranging from from ~1 to ~15 nm. Selected area diffraction by transmission electron microscopy on the MLG membranes shows a rotational disorder between the stacked graphene layers.
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Chen, Jihua, David C. Martin, and John E. Anthony. "Morphology and molecular orientation of thin-film bis(triisopropylsilylethynyl) pentacene." Journal of Materials Research 22, no. 6 (June 2007): 1701–9. http://dx.doi.org/10.1557/jmr.2007.0220.

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As a modification to the insoluble and herringbone-structured pentacene, bis(triisopropylsilylethynyl) (TIPS) pentacene has two bulky side groups, leading to good solubility in common organic solvents and regular π–π stacking arrangements in the crystalline state. Solution processing of TIPS–pentacene thin films was investigated as a function of various process parameters in this work. Electron diffraction results suggested that TIPS–pentacene molecules tended to align with the acene unit edge on to the substrate, touching down with their bulky side groups. In a TIPS–pentacene polycrystalline film, the long axis of individual crystallite is [2 1 0], while the shorter axis is [1 ¯20]. High-resolution electron microscopy was used to study the local crystal structure and characteristic defects of TIPS–pentacene thin films. Due to the nonaromatic side groups, TIPS–pentacene was found to be significantly more sensitive to the electron beam (critical dose Jc= 0.05 C/cm2at 300 kV) than pentacene itself (Jc= 0.2 C/cm2at 100 kV).
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Roy, I., and S. Hazra. "Solvent dependent ordering of poly(3-dodecylthiophene) in thin films." Soft Matter 11, no. 18 (2015): 3724–32. http://dx.doi.org/10.1039/c5sm00595g.

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The strong influence of solvents on the ordering of poly(3-dodecylthiophene) (P3DDT) due to edge-on oriented stacking, in the spin-coated thin film on the Si substrate, both near the substrate and away from it, depending upon the substrate surface nature, is observed from the X-ray reflectivity study.
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Chen, H. J. H., B. B. L. Yeh, H. C. Pan, and J. S. Chen. "ZnO transparent thin-film transistors with HfO2/Ta2O5 stacking gate dielectrics." Electronics Letters 44, no. 3 (2008): 186. http://dx.doi.org/10.1049/el:20083215.

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Yoo, Su-Hyun, Keith T. Butler, Aloysius Soon, Ali Abbas, John M. Walls, and Aron Walsh. "Identification of critical stacking faults in thin-film CdTe solar cells." Applied Physics Letters 105, no. 6 (August 11, 2014): 062104. http://dx.doi.org/10.1063/1.4892844.

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41

Ding, Q., W. Tian, M. K. Lee, E. B. Eom, and X. Q. Pan. "Interfacial Structure of Metastable 4H-BaRuO3 Thin Film on (111) SrTiO3 Substrate." Microscopy and Microanalysis 6, S2 (August 2000): 1066–67. http://dx.doi.org/10.1017/s143192760003782x.

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BaRuO3 chemically belongs to ARuO3 family. It has unique hexagonal structure rather than an orthorhombic GdFeO3-type structure of other members, such as SrRuO3 and CaRuO3. The structure of ARuO3 compounds can be described on the basis of the close-packed stacking of AO3 layers in which the center of oxygen octahedra is occupied by ruthenium. A number of polymorph structures exist by mixing the cubic and hexagonal close-packed stacking of AO3 layers.Up to date, only three polymorph structures have been observed in BaRuO3 bulk materials, which are denoted by 4H, 6H and 9R structure. The 9R structure (Fig. 1 (a)) is most stable at 1100 °C at atmosphere pressure. As pressure is increased, the 9R structure will transform through metastable 4H structure (Fig. 1(b)) to metastable 6H structure. The physical properties of BaRu03 polymorphs differ significantly with the variation of the structure. Hence, it is desirable to form phase pure polymorphs of BaRuO3 to examine the structure-property relationship.
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Mamidi, Narsimha, Ramiro Velasco Delgadillo, Aldo Gonzáles Ortiz, and Enrique Barrera. "Carbon Nano-Onions Reinforced Multilayered Thin Film System for Stimuli-Responsive Drug Release." Pharmaceutics 12, no. 12 (December 13, 2020): 1208. http://dx.doi.org/10.3390/pharmaceutics12121208.

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Herein, poly (N-(4-aminophenyl) methacrylamide))-carbon nano-onions (PAPMA-CNOs = f-CNOs) and anilinated-poly (ether ether ketone) (AN-PEEK) have synthesized, and AN-PEEK/f-CNOs composite thin films were primed via layer-by-layer (LbL) self-assembly for stimuli-responsive drug release. The obtained thin films exhibited pH-responsive drug release in a controlled manner; pH 4.5 = 99.2% and pH 6.5 = 59.3% of doxorubicin (DOX) release was observed over 15 days. Supramolecular π-π stacking interactions between f-CNOs and DOX played a critical role in controlling drug release from thin films. Cell viability was studied with human osteoblast cells and augmented viability was perceived. Moreover, the thin films presented 891.4 ± 8.2 MPa of the tensile strength (σult), 43.2 ± 1.1 GPa of Young’s modulus (E), and 164.5 ± 1.7 Jg−1 of toughness (K). Quantitative scrutiny revealed that the well-ordered aligned nanofibers provide critical interphase, and this could be responsible for augmented tensile properties. Nonetheless, a pH-responsive and mechanically robust biocompatible thin-film system may show potential applications in the biomedical field.
43

Gwaydi, January S., Hezekiah B. Sawa, Egidius R. Rwenyagila, Nathanael R. Komba, Talam E. Kibona, Nuru R. Mlyuka, Margaret E. Samiji, and Lwitiko P. Mwakyusa. "Influence of Stacking Order on the Structural and Optical Properties of Cu2ZnSnS4 Absorber Layer Prepared from DC-Sputtered Oxygenated Precursors." Tanzania Journal of Science 50, no. 1 (April 30, 2024): 115–25. http://dx.doi.org/10.4314/tjs.v50i1.9.

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Several studies have attempted to overcome the sudden volume expansion of the precursor during sulfurization by the use of oxygen-containing precursors when growing the CZTS absorber. This work demonstrates the influence of precursor stacking orders on the properties of the CZTS thin film absorber layer from DC-sputtered oxygenated precursors for solar cell applications. CZTS absorber layers were prepared from three types of DC-sputtered stacks, namely, Zn-O/Sn/Cu, Sn/Zn-O/Cu, and Sn/Cu/Zn-O. The precursors were sequentially deposited on a soda lime glass (SLG) using DC-magnetron sputtering and annealed in a sulfur and nitrogen ambient. X-ray diffractometry (XRD) and Raman spectroscopy analyses reveal the formation of crystalline kesterite CZTS structure regardless of the precursor stacking order. Atomic force microscope (AFM) analysis showed that CZTS thin films grown from precursor stacks SLG/Zn-O/Sn/Cu and SLG/Sn/Zn-O/Cu had improved morphological properties with densely packed large grains compared to that with stack SLG/Sn/Cu/Zn-O. SLG/Zn-O/Sn/Cu is the best stack among the studied stacking orders since it exhibits large grains in the absorber layer, which is preferential for high-efficiency thin film solar cells. The use of oxygenated precursor with order Sn/Zn-O/Cu promises improved CZTS absorber properties as it exhibits better morphological properties.
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Qin, Houyun, Chang Liu, Chong Peng, Mingxin Lu, Yiming Liu, Song Wei, Hongbo Wang, Nailin Yue, Wei Zhang, and Yi Zhao. "Rapid-deposited high-performance submicron encapsulation film with in situ plasma oxidized Al layer inserted." Applied Physics Express 15, no. 4 (March 22, 2022): 046503. http://dx.doi.org/10.35848/1882-0786/ac44cc.

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Abstract High-performance submicron thin-film encapsulation deposited rapidly under low temperature plays an important role in Si-based organic micro-displays. In this letter, the formation mechanism of high-performance encapsulation films consisting of SiO2/in situ plasma oxidized Al at 77 °C is explained. We think that the reason why the performance of encapsulation films deposited by this method behave better than the simple stacking of SiO2/Al2O3 is the formation of Al–O–Si bonds. By further optimizing the process parameters, the water vapor transmission rate and the transmittance in the visible region have been improved, which reached 10−6 g∙m−2∙d−1 and 90%, respectively.
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Taoka, Yuki, Terumichi Hayashi, Pasomphone Hemthavy, Kunio Takahashi, and Shigeki Saito. "Development of a bipolar electrostatic chuck with a compliant beam-array assembly having four 3D-printed layers for large film handling." Engineering Research Express 4, no. 1 (January 21, 2022): 015010. http://dx.doi.org/10.1088/2631-8695/ac4a49.

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Abstract This study proposes and verifies bipolar electrostatic grippers stacking 3D-printed-layered modules consisting of arrays of elastically deformable bipolar beams. The influence of the mechanical compliance of grippers on the attractive force that it generates is clarified by comparing two types of modules having either high or low mechanical compliances. Experiments measured the attractive force of the gripper and demonstrated the pick-and-place performance of a thin film. The results show that mechanical compliance plays an important role in mitigating the attractive force decrease in stacking modules. The grippers’ ability for thin film handling is demonstrated by observing pick-and-place behaviours of the proposed bipolar electrostatic grippers.
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Cho, Hae Seok, Min Hong Kim, and Hyeong Joon Kim. "Preferred orientation and microstructure of Ni-Zn-Cu ferrite thin films deposited by rf magnetron sputtering." Journal of Materials Research 9, no. 9 (September 1994): 2425–33. http://dx.doi.org/10.1557/jmr.1994.2425.

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We have investigated the effects of process parameters such as rf power, substrate, and gas pressure PAr on preferred orientation, microstructure, and magnetic properties of Ni-Zn-Cu ferrite thin films deposited by conventional rf magnetron sputtering. The texture structure was developed in the ferrite films deposited on the SiO2/Si(100) substrate at low rf power conditions. The ferrite film on the Si(111) substrate always had (111) texture irrespective of process parameters due to lattice matching, but the texture of the ferrite film on SiO2/Si(100) changed from (111) to (100) and finally returned to (111) orientation again with decreasing PAr. Such behavior would occur presumably due to the characteristic atomic stacking sequence corresponding to a given condition of the ion bombardment. The ferrite films deposited at low PAr had a denser microstructure consisting of tightly packed columnar grains with a smoother surface, better adhesion to the substrate, and better crystallinity than those at high PAr. Hc‖ of ferrite film deposited at low PAr was larger than that at high PAr and also larger than Hc⊥ of that deposited at the same PAr because larger compressive stress was induced at low PAr than at high PAr.
47

Williams, B. E., and J. T. Glass. "Characterization of diamond thin films: Diamond phase identification, surface morphology, and defect structures." Journal of Materials Research 4, no. 2 (April 1989): 373–84. http://dx.doi.org/10.1557/jmr.1989.0373.

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Thin carbon films grown from a low pressure methane-hydrogen gas mixture by microwave plasma enhanced CVD have been examined by Auger electron spectroscopy, secondary ion mass spectrometry, electron and x-ray diffraction, electron energy loss spectroscopy, and electron microscopy. They were determined to be similar to natural diamond in terms of composition, structure, and bonding. The surface morphology of the diamond films was a function of position on the sample surface and the methane concentration in the feedgas. Well-faceted diamond crystals were observed near the center of the sample whereas a less faceted, cauliflower texture was observed near the edge of the sample, presumably due to variations in temperature across the surface of the sample. Regarding methane concentration effects, threefold {111} faceted diamond crystals were predominant on a film grown at 0.3% CH4 in H2 while fourfold {100} facets were observed on films grown in 1.0% and 2.0% CH4 in H2. Transmission electron microscopy of the diamond films has shown that the majority of diamond crystals have a very high defect density comprised of {111} twins, {111} stacking faults, and dislocations. In addition, cross-sectional TEM has revealed a 50 Å epitaxial layer of β3–SiC at the diamond-silicon interface of a film grown with 0.3% CH4 in H2 while no such layer was observed on a diamond film grown in 2.0% CH4 in H2.
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Nam, Sung Pill, Sung Gap Lee, Seong Gi Bae, and Young Hie Lee. "Electrical Properties BaTiO3 Thick Films with an Interlayer SrTiO3 Thin Films." Solid State Phenomena 124-126 (June 2007): 659–62. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.659.

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The BaTiO3/SrTiO3 heterolayered thick films were fabricated by two different methods – thick films of BaTiO3 by screen printing method on alumina substrates electrodes with Pt, thin films of SrTiO3 by the spin-coating method on BaTiO3 thick films and once more thick films of BaTiO3 by the screen printing method on SrTiO3 layer. The leakage current and the dielectric properties were investigated for effect of various stacking sequence of sol-gel-prepared SrTiO3 layer at interface of BaTiO3 thick films. The insertion of SrTiO3 interlayer yielded BaTiO3 thick films with homogeneous and dense grain structure with the number of SrTiO3 layers. The leakage current density of the BaTiO3/SrTiO3-7 film is less that 1.5 10-9 A/cm2 at 5 V.
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Jana, Santanu, Rodrigo Martins, and Elvira Fortunato. "Stacking-Dependent Electrical Transport in a Colloidal CdSe Nanoplatelet Thin-Film Transistor." Nano Letters 22, no. 7 (March 28, 2022): 2780–85. http://dx.doi.org/10.1021/acs.nanolett.1c04822.

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Xiao, Yiqun, Jun Yuan, Guodong Zhou, Ka Chak Ngan, Xinxin Xia, Jingshuai Zhu, Yingping Zou, Ni Zhao, Xiaowei Zhan, and Xinhui Lu. "Unveiling the crystalline packing of Y6 in thin films by thermally induced “backbone-on” orientation." Journal of Materials Chemistry A 9, no. 31 (2021): 17030–38. http://dx.doi.org/10.1039/d1ta05268c.

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The annealed Y6 film exhibits well-defined Bragg peaks in grazing-incidence wide-angle X-ray scattering patterns for clear crystal indexing. The Y6 packing in its backbone results from its “L” shaped core-group and the biaxial backbone order due to end-group π–π stacking.

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