Relevant bibliographies by topics / Thin film stacking

Academic literature on the topic 'Thin film stacking'

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Published: 8 June 2024

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Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Journal articles on the topic "Thin film stacking":

1

JIANG, B., J. L. PENG, L. A. BURSILL, and H. WANG. "MICROSTRUCTURE AND PROPERTIES OF FERROELECTRIC Bi4Ti3O12 THIN FILMS." Modern Physics Letters B 13, no. 26 (November 10, 1999): 933–45. http://dx.doi.org/10.1142/s0217984999001147.

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The film morphology and defect structure of ferroelectric bismuth titanate thin films are studied by high resolution transmission electron microscopy. As-grown and RTA-processed thin films have similar defect structures, consisting of stacking faults and complex intergrowth defect structures. The as-grown specimens prepared at low temperature had smaller particle size with higher density of these defects compared to RTA-processed samples. Detailed atomic structure models for the stacking faults and intergrowth defect structures are proposed and the computer-simulated images are compared with experiment.
2

Lee, Jin Woo, Yun Hae Kim, and Chang Wook Park. "Electrical and Optical Properties of ZnO:Ag Thin-Films Depend on Lamination Formation by DC Magnetron Sputtering." Advanced Materials Research 1110 (June 2015): 211–17. http://dx.doi.org/10.4028/www.scientific.net/amr.1110.211.

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Transparent conductive oxides such as Impurity doped indium oxides, tin oxides, zinc oxide systems are widely used in the field of optoelectronics such as Photo voltaic solar cells, Flat panel displays. Recently in case of the ZnO / Ag Multilayer thin films, doping Ag films on the ZnO layer and ZnO deposited on top of it a way that has been used. However, if thin film applied to the semiconductor, because of lamination of various forms, characteristics of stacking sequence and thin film layer is a need for research. In this study, using DC magnetron sputteirng how the stacking sequence of the film and the transparent operation of various process variables, the possibility of the application to electronic devices was confirmed.
3

Arnold, Marcel, Z. L. Wang, W. Tong, B. K. Wagner, S. Schön, and C. J. Summers. "Creation of Stacking Faults at Substrate Steps in Zns Thin Films Epitaxially Grown on GaAs (001)." Microscopy and Microanalysis 3, S2 (August 1997): 633–34. http://dx.doi.org/10.1017/s1431927600010059.

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Electroluminescence (EL)-based displays are an emerging technology for next generation flat panel displays. ZnS is an important component material for light emitting devices and EL-displays. To make this material useful for high efficiency and low voltage EL applications, the density of dislocations is required to be low. High quality single crystalline ZnS thin films have recently been grown by chemical beam epitaxy [1]. This paper focuses on studying the formation mechanism of stacking faults in the film and its relation with the interface structure between the substrate and the film [2].Stacking faults are the main defects present in the film (Fig. 1). All four stacking faults (sf) are intrinsic and sf1, growing towards the left-hand side from the interface, is only of short range since after crossing sf2 the defect is terminated by a Shockley partial dislocation and the normal stacking sequence is restored. This is the mechanism that annihilates most of the stacking faults generated from the interface within the first 70 nm thickness range.
4

McIntyre, P. C., and M. J. Cima. "Microstructural inhomogeneities in chemically derived Ba2YCu3O7−x thin films: Implications for flux pinning." Journal of Materials Research 9, no. 11 (November 1994): 2778–88. http://dx.doi.org/10.1557/jmr.1994.2778.

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A gradient in the density of polytypoidal stacking faults was observed through the thickness of chemically derived epitaxial Ba2YCu3O7−x (BYC) films on (001) LaAlO3. Cross-sectional TEM studies indicated that films of less than 100 nm thickness were faulted, with a high density of polytypoidal stacking faults. A decrease in stacking fault density in thicker films (300-500 nm thick) was found with increasing distance from the most defective layer near the film/substrate interface. An abrupt transition from highly faulted material near the substrate to essentially stacking fault-free BYC in the upper part of the films was observed in several cases. The present observations are compared with the previously reported1 decrease in critical current density with increasing thickness of these films. Possible implications for flux pinning in BYC thin films are discussed.
5

Liu, Y., B. W. Robertson, and D. J. Sellmyer. "HREM study of epitaxy in Co-Sm // Cr thin films." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 488–89. http://dx.doi.org/10.1017/s0424820100138816.

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In developing Co-based magnetic thin films for high density recording, it is well known that the Cr underlayer plays a critical role in generating large in-plane coercivity. Recently it has been shown that Co-Sm films with a nominal composition from Co4Sm to Co7Sm2 exhibit high coercivity and inplane anisotropy. Transmission electron microscopy studies of Co-Sm films have shown that the microstructure of a Co-Sm thin film is composed of the amorphous matrix and crystallites with a grain size of about 5 nm. The crystallites in the as-deposited Co-Sm films have a close-packed structure . Each crystallite has a particular stacking mode which consists of local random stacking, occasionally a few unit cells of two layer stacking AB, three layer stacking ABC, and four layer stacking ABAC. However, the epitaxy relation between the Co-Sm crystallites and the Cr, if any, remains a mystery. In this paper we report our discovery of a new epitaxial relation between the Co- Sm crystallites and the Cr underlayer.
6

Nguyen, Thang, Walter Varhue, Edward Adams, Mark Lavoie, and Stephen Mongeon. "Growth of heteroepitaxial GaSb thin films on Si(100) substrates." Journal of Materials Research 19, no. 8 (August 2004): 2315–21. http://dx.doi.org/10.1557/jmr.2004.0307.

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The heteroepitaxial growth of GaSb thin films on Si(100) and GaAs(100) substrates is presented. The growth technique involves the use of atomic Ga and Sb species, which are provided by thermal effusion and radio frequency sputtering, respectively. The crystalline quality of the heteroepitaxial GaSb film on the Si substrate is high despite the larger lattice mismatch. Epitaxial quality is determined by high-resolution x-ray diffraction and Rutherford backscatter spectrometry channeling. Atomic-force microscopy is used to monitor the evolution of surface morphology with increasing film thickness. Transmission electron microscopy shows the formation of stacking faults at the Si/GaSb interface and their eventual annihilation with increasing GaSb film thickness. Annihilation of stacking faults occurs when two next-neighbor mounds meet during the overgrowth of a common adjacent mound.
7

Wang, Xintai, Sara Sangtarash, Angelo Lamantia, Hervé Dekkiche, Leonardo Forcieri, Oleg V. Kolosov, Samuel P. Jarvis, et al. "Thermoelectric properties of organic thin films enhanced by π–π stacking." Journal of Physics: Energy 4, no. 2 (March 23, 2022): 024002. http://dx.doi.org/10.1088/2515-7655/ac55a3.

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Abstract Thin films comprising synthetically robust, scalable molecules have been shown to have major potential for thermoelectric energy harvesting. Previous studies of molecular thin-films have tended to focus on massively parallel arrays of discrete but identical conjugated molecular wires assembled as a monolayer perpendicular to the electrode surface and anchored via a covalent bond, know as self-assembled monolayers. In these studies, to optimise the thermoelectric properties of the thin-film there has been a trade-off between synthetic complexity of the molecular components and the film performance, limiting the opportunities for materials integration into practical thermoelectric devices. In this work, we demonstrate an alternative strategy for enhancing the thermoelectric performance of molecular thin-films. We have built up a series of films, of controlled thickness, where the basic units—here zinc tetraphenylporphyrin—lie parallel to the electrodes and are linked via π–π stacking. We have compared three commonly used fabrications routes and characterised the resulting films with scanning probe and computational techniques. Using a Langmuir-Blodgett fabrication technique, we successfully enhanced the thermopower perpendicular to the plane of the ZnTPP multilayer film by a factor of 10, relative to the monolayer, achieving a Seebeck coefficient of −65 μV K−1. Furthermore, the electronic transport of the system, perpendicular to the plane of the films, was observed to follow the tunnelling regime for multi-layered films, and the transport efficiency was comparable with most conjugated systems. Furthermore, scanning thermal microscopy characterisation shows a factor of 7 decrease in thermal conductance with increasing film thickness from monolayer to multilayer, indicating enhanced thermoelectric performance in a π–π stacked junction.
8

Tajari Mofrad, Mohammad Reza, Jaber Derakhshandeh, Ryoichi Ishihara, Alessandro Baiano, Johan van der Cingel, and Kees Beenakker. "Stacking of Single-Grain Thin-Film Transistors." Japanese Journal of Applied Physics 48, no. 3 (March 23, 2009): 03B015. http://dx.doi.org/10.1143/jjap.48.03b015.

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Wada, Takahiro, Takayuki Negami, and Mikihiko Nishitani. "Growth defects in CuInSe2 thin films." Journal of Materials Research 9, no. 3 (March 1994): 658–62. http://dx.doi.org/10.1557/jmr.1994.0658.

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CuInSe2 thin film solar cells with an efficiency of about 10% were studied with a cross-sectional high resolution transmission electron microscope (HRTEM). The growth defects such as twins, stacking faults, and intergrowth phase in the CuInSe2 thin films were studied in detail. Polycrystalline CuInSe2 films were deposited on a Mo-coated glass substrate by using the three source evaporation system. The CuInSe2 film contains fivefold multiply twinned crystallites as well as a high density of twins in the {112} plane. The CuInSe2 film also contains intergrowth phase with a long range of periodicities of 10 Å parallel to the [112] direction of the chalcopyrite structure. The intergrowth phase composition is similar to the chalcopyrite phase. The structural model of the intergrowth phase is proposed on the basis of the high resolution electron micrograph.
10

Hua, Zhong, Xiangcheng Meng, Yaming Sun, Wanqiu Yu, and Dong Long. "Properties of Cu2ZnSnS4 thin films prepared by magnetron sputtering and sulfurizing the precursors with different stacking sequences." Modern Physics Letters B 28, no. 26 (October 10, 2014): 1450210. http://dx.doi.org/10.1142/s0217984914502108.

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The stacked precursors were deposited on glass substrates from Cu , Sn and ZnS targets by magnetron sputtering with six kinds of stacking sequences. The precursors were sulfurized at 500°C for 2 h in an atmosphere of sulfur. The properties of thin films such as microstructure, morphology, chemical composition, electrical and optical properties of the films were investigated by X-ray diffraction (XRD), scanning election microscopy (SEM), energy dispersive spectroscopy (EDS), Hall effect measurements and UV-visible spectrophotometer (UV-VIS). The results show that the thin film after sulfurizing at 500°C using the stacking order of Cu / Sn / ZnS /glass is the best absorber layer for Cu 2 ZnSnS 4 thin films solar cell among the six kinds of stacking sequences.
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Journal articles

Dissertations / Theses on the topic "Thin film stacking":

1

Abbas, Ali. "The microstructure of thin film cadmium telluride photovoltaic materials." Thesis, Loughborough University, 2014. https://dspace.lboro.ac.uk/2134/16389.

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In this work cadmium telluride thin film photovoltaic devices have successfully been produced using a novel closed-field magnetron sputtering technique. This technique offers the possibility of producing cells in an all-in-one vacuum process with the potential to provide a new lower cost production route. The sputtered cadmium telluride layers were characterised in detail using a range of advanced microscopy based techniques both in the as deposited and after the cadmium chloride treated state, a treatment that is necessary to produce a working cell. In the as deposited condition the cadmium telluride layer was seen to have a fine-grained columnar structure containing a high density of stacking faults. After the cadmium chloride treatment these grains recrystallized and the new grains were equiaxed with a much lower density of intragranular defects. Similar effects were also observed in samples prepared using close space sublimation. To understand this recrystallization behaviour during the cadmium chloride treatment, the key treatment parameters were systematically varied. Chemical analysis in Scanning Transmission Electron Microscopy (STEM) showed that chlorine travelled down the cadmium telluride grain boundaries and accumulated adjacent to the cadmium telluride/cadmium sulphide interface. This interface is where the cadmium telluride grains were found to recrystallise first during interrupted cadmium chloride treatments. The nature of the stacking faults was examined using High Resolution Transmission Electron Microscopy (HR-TEM). This showed that in localised regions up to one plane of atoms per sequence was missing based on the expected zinc blende structure. This changed the packing of the atoms such that a local change in crystal structure occurred. This local change in phase was successfully mapped using Electron Backscatter Diffraction in planar section produced using Focused Ion Beam milling. This was subsequently studied in more detail using Transmission Electron Backscatter Diffraction in the Scanning Electron Microscope, where the intra-granular arrangement of the phases was observed. HR-TEM was used to quantitatively measure the linear defects in the cadmium telluride layer after thermal annealing with and without the cadmium chloride present. This showed that annealing alone resulted in only a modest reduction in the density of linear defects and grain recrysallisation only occurred in the presence of cadmium chloride. Cadmium magnesium telluride (CMT) was successfully grown epitaxially onto the cadmium telluride as an electron reflector layer to improve cell performance. During deposition the cell experienced high temperatures and this caused the stacking faults to return in a cell that had been previously cadmium chloride treated. This resulted in a reduction in cell efficiency, providing another link between linear defects and a degradation in cell performance.
2

Zhang, Shengli. "Study the growth process and interface properties of Cu2ZnSnS4 solar cells fabricated by magnetron sputtering." Thesis, Queensland University of Technology, 2018. https://eprints.qut.edu.au/123667/1/Shengli_Zhang_Thesis.pdf.

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In this project, solar cells made from earth abundant materials, Copper-Zinc-Tin-Sulfide were fabricated. Several new strategies were developed to boost the energy conversion efficiency, including a high conductive and transparent ITO window layer prepared at low temperature for CZTS solar cells, a novel precursor stacking and optimised sulphurisation process, and interface engineering by introducing ultra-violet generated ozone treatment. With all these efforts, efficiency of above 5.5% for pure CZTS was achieved.
3

Doumit, Nicole. "Etude de l’empilement de couches minces de cuivre sur alumine : applications à la réalisation de composants passifs haute température." Thesis, Saint-Etienne, 2015. http://www.theses.fr/2015STET4004/document.

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Ce travail de thèse consiste à étudier l’empilement de couche mince de cuivre sur un substrat d’alumine afin de réaliser des composants passifs fonctionnant à haute température. Une étude des couches minces de cuivre a été tout d’abord menée par simulation à l’aide du logiciel COMSOL Multiphysics et expérimentalement à l’aide de bancs de caractérisation spécifiques. Cette étude a permis de mettre en évidence une augmentation des contraintes équivalentes de Von Mises stress avec la température et avec l'épaisseur de cuivre. Les simulations montrent également une relaxation des contraintes résiduelles après un recuit d’une heure de la couche de cuivre. Les résultats expérimentaux montrent une augmentation de l’adhérence avec la température et l’absence de tout indice de fissures. D’autre part, des études électriques sur des composants intégrés ont été effectuées: soit après recuit des composants soit en cyclage thermique (25-200°C). Ces mesures ont permis de mettre en évidence une stabilité de la valeur de l’inductance quel que soit le type de traitement thermique effectué. La résistance augmente avec la température et retrouve sa valeur initiale après un cyclage thermique. Ce qui n’est pas le cas après un recuit ; la résistance augmente mais ne retrouve plus sa valeur initiale après refroidissement. Ainsi, ce travail a permis de conclure que les composants testés restent fonctionnels à haute température sans aucune détérioration
This thesis is a study of copper thin film on an alumina substrate in order to realize passive components operating at high temperature. A study of copper thin films was made by simulation using COMSOL Multiphysics software and experimentally using specific characterization benches. This study highlighted an increase of Von Mises equivalent stresses with temperature and with copper thickness. Simulations also show a relaxation of residual stresses after one hour of annealing. Experimental results show an increase of adhesion in function of temperature and an absence of cracks. On the other hand, electrical studies for integrated components were performed either after annealing or in thermal cycling (25-200°C). These measures highlighted inductance stability regardless of heat treatment type. The resistance increases with temperature and returns, after thermal cycling, to its initial value. This is not the case after annealing; the resistance increases but cannot return to its initial value after cooling. Thus, this work has concluded that tested components remain functional at high temperature without any deterioration
4

Thompson, John O. "The importance of elemental stacking order and layer thickness in controlling the formation kinetics of copper indium diselenide /." Connect to title online (Scholars' Bank) Connect to title online (ProQuest), 2007. http://hdl.handle.net/1794/6197.

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Thesis (Ph. D.)--University of Oregon, 2007.
Typescript. Includes vita and abstract. Includes bibliographical references (leaves 81-84). Also available online in Scholars' Bank; and in ProQuest, free to University of Oregon users.
5

Ruano, Merchán Catalina. "Synthesis and characterization of 2D complex oxide films in the SrTiO₃/Pt(111)/Al₂O₃(0001) system." Electronic Thesis or Diss., Université de Lorraine, 2022. http://www.theses.fr/2022LORR0039.

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La formation d’oxydes quasicristallins dodécagonaux 2D (OQC), ainsi que celle de phases approximantes associées ont été récemment rapportées dans des films minces dérivés des pérovskites BaTiO₃ ou SrTiO₃, déposés sur des monocristaux de Pt orientés (111). Ces structures 2D ajoutent de nouvelles fonctionnalités aux films ultra-minces d’oxydes ternaires supportés sur des métaux à l’approche de la limite 2D. Ici, nous utilisons une approche d’empilement de couches minces dans laquelle le monocristal est remplacé par une couche tampon de Pt(111), déposée par MBE sur un substrat d’Al₂O₃(0001). Un film ultra-mince de SrTiO₃ a ensuite été déposé par PLD. L’empilement de films est entièrement caractérisé par des techniques de diffraction (LEED, RHEED, XRD), de microscopie (STM, Nano-SAM,TEM) et de spectroscopie (XPS, AES). Nous rapportons la découverte de trois nouveaux approximants obtenus par réduction de ce système par recuit à haute température dans des conditions de vide poussé. Ces phases peuvent être décrites par trois pavages différents construits avec des éléments du pavage NGT. Un modèle atomique déterminé par DFT, en accord avec les observations expérimentales, est proposé pour chaque approximant. Cette approche en couche mince peut être utile pour explorer la formation de phases d’oxyde 2D complexes dans d’autres combinaisons métal-oxyde
The formation of 2D dodecagonal quasicrystalline oxides (OQC), as related approximant phases were recently reported in thin films derived from BaTiO₃ or SrTiO₃ perovskites deposited on (111)-oriented Pt single crystal. These 2D structures add novel functionalities to the ultra-thin films of ternary oxides supported on metals when approaching the 2D limit. Here, we use a thin film stacking approach in which the single crystal is replaced by a Pt (111) buffer layer, deposited by MBE on an Al₂O₃(0001) substrate. An ultra-thin film of SrTiO₃ was subsequently deposited by PLD. The film stacking is fully characterized by diffraction (LEED, RHEED, XRD),microscopy (STM, TEM, Nano-SAM) and spectroscopy (XPS, AES) techniques. We report the discovery of three OQC approximants obtained by reducing this system by annealing at high temperature under vacuum conditions. These phases can be described by three different tilings constructed with NGT elements. An atomic model determined by DFT, in agreement with the experimental observations, is proposed for each approximant. This thin-film approach can be useful for exploring the formation of complex 2D oxide phases in other metal-oxide combinations
6

Prilliman, Gerald Stephen. "Synchrotron X-ray diffraction studies of phase transitions and mechanical properties of nanocrystalline materials at high pressure." Berkeley, Calif. : Oak Ridge, Tenn. : Lawrence Berkeley National Laboratory ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2003. http://www.osti.gov/servlets/purl/825137-DcNEaM/native/.

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Thesis (Ph.D.); Submitted to The University of California at Berkeley, Berkeley, CA (US); 1 Sep 2003.
Published through the Information Bridge: DOE Scientific and Technical Information. "LBNL--55022" Prilliman, Gerald Stephen. USDOE Director. Office of Science. Office of Basic Energy Sciences (US) 09/01/2003. Report is also available in paper and microfiche from NTIS.
7

Lai, Yi-Ming, and 賴奕名. "Study of Stacking ZnO Active Layer of Thin Film Transistor." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/27698785732609826334.

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8

Chen, Huay-Zhong, and 陳慧中. "Influence of Self-Assembled Monolayers on the Stacking Orientation of Organic Semiconductor Thin Film." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/76062121532334033403.

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Abstract:
碩士
國立臺灣大學
化學研究所
92
In this thesis, we mainly studied the stacking orientation of two kinds of organic semiconductor thin films: ?sexithiophene and copper phthalocyanine (CuPc), by thermal evaporation on gold and modified gold surface such as self-assembled monolayer (SAM) and poly-methylene film. We determined the organic semiconductor thin films orientation by using reflection absorption IR (RAIR), Atomic Force Microscopy (AFM) image, Near Edge X-Ray Absorption Fine Structure (NEXAFS) spectra as well as Powder X-Ray Diffraction (XRD) spectra. On the gold surface, all of the molecules were stacking parallel to the surface, but on self-assembled monolayer, they were stacking near perpendicular to the surface. As we deposit the ?sexithiophene on rubbed poly-methylene surfaces, the RAIR showed that the molecules were oriented parallel to the poly-methylene surface. Moreover, the AFM images showed that the crystals of ?sexithiophene were aligning perpendicular to the rubbing direction. The different molecular stacking orientation of the thin films also gave a distinction of the optical properities. For ?sexithiophene, when the molecules were parallel to the surface, a much stronger fluorescence intensity was obtained. As for CuPc, a red shift in UV-vis spectra was observed when the molecules were perpendicular to the surface.
9

Su, Zhe-Min, and 蘇哲民. "Prepartion of Cu2ZnSnS4 (CZTS) Photon Absorption Layer for Thin-film Solar Cells by Stacking Layer Sputtering Method." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/4z7n8n.

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碩士
國立交通大學
材料科學與工程學系所
103
This study prepares the precursors comprised of Cu2S, ZnS and SnS2 stacking layers to form the Cu2ZnSnS4 (CZTS) photon absorption layer for thin-film solar cell via a sulfurization at 570°C. The influence of stacking-layer struture, sulfurization temperature and time duration as well as the thickness of SnS2 on the microstructure and composition of CZTS thin film was investigated. For the samples subjected to the sulfurization, the scanning electron microscopy found that the ZnS/SnS2/Cu2S (4-ZTC) may form single-layer CZTS thin film whereas the rest of stacking layer structures are inappropriate for CZTS formation due to the delamination from substarte or incomplete alloy reactions. The sulfurization at 570°C for 60 min was identified as the best heat-treatment condition since it provides good crystallinity and is able to avoid severe Sn loss in CZTS layer. As to the influence of thickness of SnS2, x-ray diffraction and Raman spectroscopy analyses found that single-phase CZTS with the grain size of 1 micro meter may form in the 4-ZTC stacking layer containing 0.45-micro meter thick SnS2. Energy dispersive spectroscopy revealed the composition of such a CZTS film is Cu-poor/Zn-rich with the stoichiometry of Cu24.46Zn14.52Sn11.53S49.7. UV-visible spectroscopy indicated the bandgap of CZTS film is 1.49 eV. Hall effect measurement found that the CZTS layer is a p-type semiconductor with major carrier concentration of 7.37x10^15 cm^-3 and carrier mobility of 4.47 cm2V^-1sec^-1.
10

Hsiao, Ching Hung, and 蕭景鴻. "The effect of strain relaxation induced stacking fault in (001) epitaxial FePd thin film on magnetization reversal." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/47855958965869764866.

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Abstract:
博士
國立清華大學
材料科學工程學系
104
In this study, [Fe 14 Å /Pd19 Å]5 and [Fe 3 Å /Pd 4 Å]5 thin films were grown at elevated temperatures by an ultra-high vacuum electron beam deposition on MgO (100) substrates. When [Fe14 Å /Pd19 Å]5 was prepared at 400 oC, the upper part of thin film remains layer structure indicating the intermixing phenomenon is not uniform through the elemental mapping analysis, and [Fe14 Å /Pd19 Å]5 film exhibits magnetic perpendicular anisotropy until the grown temperature is 600 oC. As [Fe 3 Å /Pd 4 Å]5 was prepared at 400 oC, [001] L10 FePd with perpendicular anisotropy and out-of-plane coercivity (Hc,) of 17504.7 Oe is obtained implying the intermixing phenomenon is improved. As, the prepared temperatures of [Fe 3 Å /Pd 4 Å]5 are 600 oC and 700 oC, the Hc, are 34007.0 and 600015.5Oe, respectively. One of the FePd films prepared at 700 oC was then post annealed at 700 oC for 5 hs, but Hc, drops apparently to 110011.9 Oe. As [Fe 3 Å /Pd 4 Å]5 prepared at 700 oC with and without post annealed, the L10 ratio are 0.94 and 0.71, respectively. In addition, Ku have less relevance to Hc, in FePd films. This results indicate both L10 ratio and Ku have less dependence on Hc, of FePd film here. FePd thin films are island structure and the grain boundary is composed of MgO (substrate), and average grain sizes were about 15-17 nm indicating similar grain sizes as prepared at 400 and 700 oC with or without post-annealing, respectively. Therefore, the effects of grain size and grain boundary can be rule out. Defects such as dislocation and stacking fault will be generated to reduce the mismatch strain during the growth process as thickness is about ~22 Å. According to the defect density analyzed by transimission electron microscopy, the stacking fault densities (ρS.F.) are closely related to Hc,, in addition Hc, and ρS.F. are increased as growth temperature raising. And, the ρS.F. are 1.050.04 nm-2 and 0.510.06 nm-2 as prepared at 700 oC treated without or with post annealing, respectively. Hc, is proportional to 〖ρ 〗_(S.F.)^1.5, indicating the strong pinning effect, therefore, stacking faults act as domain wall strong pinning sites and it will increase the resistance of magnetic domain wall motion during magnetization reversal, resulting in higher Hc,. By high angle annular dark field analysis, an intrinsic stacking fault was found and its bounded is composed of a pair of 1/2 <110> partial dislocations as FePd film prepared at 700 oC, showing total dislocation can be dissociated into stacking fault via climbing dissociation mechanism. Therefore, ρS.F. increase as growth temperature rising. As a FePd film was treated with post annealing, ρS.F. significantly decreases by 1/6 [112 ̅] and 1/3 [111] partial dislocations reacting with each other, leading to less strong pinning sites and lower Hc,. Because stacking faults acting as strong pinning sites, ρS.F. and Hc,can be manipulated via adjusting growth rate of [Fe 3 Å/Pd 4 Å]5 films. At lower growth rate (0.005 Å/s), the opportunity of partial dislocation interaction in FePd flm was raised, which is similar to FePd film treated post annealing, leading to lower Hc, (1400±12.0 Oe). Besides, it takes some time for dislocation dissociation by climbing, therefore, higher growth rate (0.03 Å/s) reduces climbing dissociation and ρS.F., causing lower Hc, (1920±7.3 Oe). (Therefore, an optimum value of Hc,exists at the moderate growth rate) To reducing ordering temperature, adding Cu3N layer or N2 in FePd film and then treated with post annealing are also studied. When adding thermal dissociated Cu3N layer to FePd film, which was prepared by electron beam deposition([Fe 3 Å/Pd 4 Å]4/Cu3N (15 Å)/ [Fe 3 Å/Pd 4 Å]) and treated post annealing for 20 min, L10 FePdCu phase is obtained. By high angle annular dark field analysis, Cu atom tends to occupy the Fe lattice site, therefore, the spin-orbital coupling between Fe and Pd is reduced, leading to soft magnetic behavior. [Fe 8 Å /Pd 4 Å]8 films with some nitrogen were prepared via sputtering and then treated with post annealing at 400 oC for 1 h. And, (111) oriented fcc FePd film with larger grain size is obtained as adding N2 or raising N2 ratio, indicating the addition of nitrogen can promote atomic inter-diffusion. But, FePd films with grain size about 3-8 nm are similar to the smallest thermal stable size (~5 nm) of L10 FePd, resulting in soft magnetic behavior.

Book chapters on the topic "Thin film stacking":

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Ruan, Jeng, and Kao-Shuo Chang. "Mutually Influenced Stacking and Evolution of Inorganic/Organic Crystals for Piezo-Related Applications." In Functional Thin Films Technology, 127–49. New York: CRC Press, 2021. http://dx.doi.org/10.1201/9781003088080-5.

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Åkervall, Lisa. "Post-Cinematic Unframing." In Theorizing Film Through Contemporary Art. Nieuwe Prinsengracht 89 1018 VR Amsterdam Nederland: Amsterdam University Press, 2020. http://dx.doi.org/10.5117/9789462989467_ch12.

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Abstract:
What becomes of the frame in an era of post-cinema? This chapter explores that question and possible answers as suggested by two exemplary post-cinematic moving-image works, Camille Henrot’s single-channel video installation Grosse Fatigue (2013) and Kevin B. Lee’s video essay Transformers: The Premake (2014). The proliferation of frames in these works enacts an itinerary of the aesthetic strategy I call ‘post-cinematic unframing’ that particularly comes to the fore when framing is explicitly thematised – as it is, for example, when pop-up bubbles are superimposed on a scene to display characters’ text messaging, or by superimposing, stacking, juxtaposing, and collaging images.
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"Mechanical Behavior of High-Entropy Alloys—Questions and Answers." In Mechanical Behavior of High-Entropy Alloys: Key Topics in Materials Science and Engineering, 21–47. ASM International, 2022. http://dx.doi.org/10.31399/asm.tb.mbheaktmse.t56030021.

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Abstract This chapter, presented in a question-and-answer format, covers many practical aspects of high-entropy alloys (HEAs). It provides clear and concise answers to more than 50 questions, imparting knowledge on alloying elements, heat treatments, diffusion mechanisms, phase formation, lattice distortion, crystal and grain structures, structure-property relationships, microstructure control, and characterization methods. It likewise explains how to calculate the effect of strengthening processes on the mechanical properties of HEAs and offers insights on how to balance strength, ductility, and density for specific applications. It also provides information on twinning behaviors, stacking faults, elastic properties, coating and film deposition methods, manufacturing challenges, and the use of computational techniques for alloy design.
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Jahid Akhtar, Abu. "Graphene-Based Materials for Supercapacitor." In Supercapacitors [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.98011.

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Graphene, a one-atomic-thick film of two-dimensional nanostructure, has piqued the attention of researchers due to its superior electrical conductivity, large surface area, good chemical stability, and excellent mechanical behaviour. These extraordinary properties make graphene an appropriate contender for energy storage applications. However, the agglomeration and re-stacking of graphene layers due to the enormous interlayer van der Waals attractions have severely hampered the performance of supercapacitors. Several strategies have been introduced to overcome the limitations and established graphene as an ideal candidate for supercapacitor. The combination of conducting polymer (CP) or metal oxide (MO) with graphene as electrode material is expected to boost the performance of supercapacitors. Recent reports on various CP/graphene composites and MO/graphene composites as supercapacitor electrode materials are summarised in this chapter, with a focus on the two basic supercapacitor mechanisms (EDLCs and pseudocapacitors).
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Bohacs, K. M., and G. J. Grabowski. "14 Green River Formation, Laney Member, Eocene, Wyoming, USA—A Balanced-Fill Lake System with Microbial Carbonate and Oil Shale, an Analog for Part of the South Atlantic Pre-Salt." In Sequence Stratigraphy: Applications to Fine-Grained Rocks, 505–36. The American Association of Petroleum Geologists and Brazilpetrostudies, 2022. http://dx.doi.org/10.1306/137123091283.

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ABSTRACT The Green River Formation illustrates the expression of sequence-stratigraphic surfaces and units in lacustrine and alluvial strata. These settings are distinctly different from those of most of the mudstone units considered in this book. Our study shows how applying the sequence-stratigraphic method and approach from first principles in continental settings can provide insights into the accumulation of mudstones enriched in organic matter and biogenic material. These settings also have substantial hydrocarbon source, reservoir, and seal potential. Indeed, lacustrine settings host many of the largest oil discoveries of this century. This setting offers an opportunity to examine the expression of parasequences, depositional sequences, and key surfaces in a setting that is significantly different from the more commonly studied marine settings. Although lakes may seem completely different from oceans, they have enough similarities with oceans that their differences tell us much about what is really essential about sequence stratigraphy—and what is an accident of the depositional setting. The sequence-stratigraphic approach of recognizing a hierarchy of rock packages bounded by various surfaces works very well in lake strata. In studying lacustrine strata, we recognize the same types of sequence-stratigraphic surfaces as in marine settings along with similar stratal stacking patterns. The expressions of parasequences and sequences differ between marine and lacustrine settings, however, because of significant differences among the dynamics and responses of these systems. Despite these differences, we see that the sequence-stratigraphic approach works well for lakes. Separate models, however, are needed for each of three lake-basin types to summarize the lacustrine sequence expression—just as shallow-marine carbonate sequences look different from shallow-marine siliciclastic sequences and require separate models. Contrasts among lake and marine systems make it inappropriate to directly apply one unmodified marine sequence-stratigraphic model to all lake systems. Indeed, one lacustrine model is not applicable to all lake-basin types.

Conference papers on the topic "Thin film stacking":

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Cheng-Ta Ko, Ying-Ching Shih, Jing-Yao Chang, Tzu-Ying Kuo, Yu-Hua Chen, A. Ostmann, and D. Manessis. "Stacking of ultra-thin film packages." In 2008 2nd Electronics Systemintegration Technology Conference. IEEE, 2008. http://dx.doi.org/10.1109/estc.2008.4684337.

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Shih, Ying-Ching, Tzu-Ying Kuo, Yin-Po Hung, Jing-Yao Chang, Chih-Yuan Cheng, Kuo-Chyuan Chen, Ching-Kuan Lee, et al. "Manufacturing and stacking of ultra-thin film packages." In 2009 IEEE 59th Electronic Components and Technology Conference (ECTC 2009). IEEE, 2009. http://dx.doi.org/10.1109/ectc.2009.5074201.

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Hsiao, Ching Hung, and Chuenhou Hao Ouyang. "Stacking Faults Induced Domain Wall Pinning in (001) FePd Thin Film." In 2016 International Conference of Asian Union of Magnetics Societies (ICAUMS). IEEE, 2016. http://dx.doi.org/10.1109/icaums.2016.8479688.

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Shibuya, A., A. Ohuchi, and K. Takemura. "3D-Stacking Process for Si Interposer with Integrated Thin-film Capacitors." In 2008 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2008. http://dx.doi.org/10.7567/ssdm.2008.c-1-2.

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Stoilov, Vesselin. "Ferromagnetic Shape Memory Thin Film In-Plane Actuators: Assessment of Mechanical Output." In ASME 2007 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/detc2007-35467.

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Ferromagnetic shape memory alloy micro actuators and motors are promising for applications in various servo control systems, with the potential to provide ultra(sub-nano)-precision positioning and compensation. This article shows that in an in-plane configuration, thin film ferromagnetic shape memory actuators open the possibility to reach more powerful actuators keeping the same geometric dimensions by simply stacking these films. The assessment of mechanical output for the FSMA thin film actuators have been done with a multiscale model, which allowed for concurrent simulation of the phenomena at atomic and mesoscale.
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Gutkin, Mikhail Y., Kristina N. Mikaelyan, and Ilya A. Ovid'ko. "Misfit defect configurations associated with stacking faults in thin crystalline film/substrate systems." In International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, edited by Alexander I. Melker. SPIE, 1999. http://dx.doi.org/10.1117/12.347456.

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Yarmolenko, Sergey, Kevin Galdamez, Sudheer Neralla, Zhigang Xu, Devdas Pai, and Jagannathan Sankar. "Study of the Formation of Long Period Stacking Ordered Phases in Sputtered Thin Film Mg-Gd-Zn Alloys." In ASME 2017 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2017. http://dx.doi.org/10.1115/imece2017-71987.

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Formation of long-period stacking ordered (LPSO) phases can significantly improve mechanical and corrosion properties of Mg-alloys. Typically LPSO phases can be formed by quick solidification of Mg-alloys having at least two alloying elements with atomic radii higher and lower than that of Mg. Stability of LPSO phases greatly depend on amounts and ratio of alloying elements. We report formation of thin film LPSO structures produced by co-sputtering of magnesium with zinc and gadolinium having less than 10% of alloying elements. This method allows controlling the ratio of the elements in composition, deposition temperature and orientation of thin films. Pure Mg, Zn and Gd films and their alloys deposited at temperatures below 200°C have HCP Mg-based crystallographic structure with exclusively basal orientation. LPSO phases and their stacking period were detected by observation of laminar structure patterns in low-angle x-ray reflectometry scans. The study of effects of elemental composition, deposition temperature and post-annealing of room temperature-deposited films on the formation of LPSO phase showed that the co-sputtering method can be very useful and efficient for the screening of new LPSO phases without the considerable expense preparation of bulk alloy preparation.
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Murayama, Takahide, Akiyoshi Suzuki, Toshiyuki Sakuishi, and Yasuhiro Morikawa. "Micro thin-film li-ion battery stacking challenge by backside via last TSV technology." In 2017 12th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT). IEEE, 2017. http://dx.doi.org/10.1109/impact.2017.8255910.

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Watts, Michael J., Stephen R. Yeandel, Roger Smith, J. Michael Walls, and Pooja M. Panchmatia. "Atomistic Insights of Multiple Stacking Faults in CdTe Thin-Film Photovoltaics: A DFT Study." In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018. http://dx.doi.org/10.1109/pvsc.2018.8547934.

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Song, Young Min, Gil Ju Lee, Yeong Jae Kim, and Young Jin Yoo. "Reflective Color Filters with Enlarged Color Gamut Enabled by Stacking Silicon Nanowires on Thin-film Coatings." In 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring). IEEE, 2019. http://dx.doi.org/10.1109/piers-spring46901.2019.9017454.

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To the bibliography