Journal articles: 'Thin film silicon layers'

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Guo, Hang, Jun Ying Jiang, Jia Xing Liu, Zhi Hua Nie, Fang Ye, and Chong Fang Ma. "Fabrication and Calibration of Cu-Ni Thin Film Thermocouples." Advanced Materials Research 512-515 (May 2012): 2068–71. http://dx.doi.org/10.4028/www.scientific.net/amr.512-515.2068.

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Thin film thermocouples (TFTCs) have vast vistas owing to their advantages, such as thin junction, small volume, fast response rate, high sensitivity and so on. In this investigation, a transient temperature sensor of TFTCs was fabricated to measure the surface transient temperature by vacuum coating technology. Silicon dioxide was selected as insulating substrate, the overall dimension of which was 8 mm long, 8 mm wide, and 0.1 mm thick. Two different metal layers were sandwiched between silicon dioxide 2 insulating substrate and silicon dioxide protective layer: cuprum and nickel films, which were 0.08 μm thick. TFTCs consist of 13 Cu-Ni junctions, which are connected in series. The whole TFTCs area is 4.6mm × 4.6 mm. The aggregate thickness of the transient temperature sensor is 0.17 μm. To protect Cu and Ni films, a silicon dioxide layer thickness of 0.01 μm was evaporated on metal layers excluding terminal points. This research carried out static and dynamic calibration to TFTCs. The Seebeck coefficient of the thin film thermocouple is 0.83843 μV/°C. The dynamic performance of TFTCs exhibited dynamic behavior corresponding to the heat flux change on the surface of thin film thermocouple.

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Zeman, Miroslav. "Thin-Film Silicon PV Technology." Journal of Electrical Engineering 61, no. 5 (September 1, 2010): 271–76. http://dx.doi.org/10.2478/v10187-010-0039-y.

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Thin-Film Silicon PV TechnologyThin-film silicon solar cell technology is one of the promising photovoltaic technologies for delivering low-cost solar electricity. Today the thin-film silicon PV market (402MWpproduced in 2008) is dominated by amorphous silicon based modules; however it is expected that the tandem amorphous/microcrystalline silicon modules will take over in near future. Solar cell structures based on thin-film silicon for obtaining high efficiency are presented. In order to increase the absorption in thin absorber layers novel approaches for photon management are developed. Module production and application areas are described.

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Torres, Arturo, Mario Moreno, Pedro Rosales, Miguel Dominguez, Alfonso Torres, Alfredo Morales, Adrian Itzmoyotl, and Javier de la Hidalga. "Study of nanocrystalline silicon-germanium for the development of thin film transistors." European Physical Journal Applied Physics 89, no. 1 (January 2020): 10102. http://dx.doi.org/10.1051/epjap/2020190264.

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In this work, we study the effect of the deposition RF-power on the structural, optical and electrical properties of hydrogenated nanocrystalline silicon-germanium (nc-SiGe:H) thin films obtained by plasma enhanced chemical vapor deposition (PECVD) at substrate temperature of 200 °C. The objective is to produce films with high crystalline fraction in order to be used as active layers in thin film transistors (TFTs). Bottom-gate (BG) thin film transistors were fabricated with nc-SiGe:H active layers, deposited at different RF-power. Values of ON-OFF current ratio, subthreshold slope and threshold voltage of 105, 0.12 V/dec and 0.9 V, respectively, were obtained on TFTs with the nc-SiGe:H active layer deposited at 25 W.

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Balasundraprabhu, Rangasamy, E. V. Monakhov, N. Muthukumarasamy, and B. G. Svensson. "Studies on Nanostructure ITO Thin Films on Silicon Solar Cells." Advanced Materials Research 678 (March 2013): 365–68. http://dx.doi.org/10.4028/www.scientific.net/amr.678.365.

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Nanostructure ITO thin films have been deposited on well cleaned glass and silicon substrates using dc magnetron sputtering technique. The ITO films are post annealed in air using a normal heater setup in the temperature range 100 - 400 °C. The ITO film annealed at 300°C exhibited optimum transparency and resistivity values for device applications. The thickness of the ITO thin films is determined using DEKTAK stylus profilometer. The sheet resistance and resistivity of the ITO films were determined using four probe technique. Finally, the optimized nanostructure ITO layers are incorporated on silicon solar cells and the efficiency of the solar cell are found to be in the range 12-14%. Other solar cell parameters such as fill factor(FF), open circuit voltage(Voc),Short circuit current(Isc), series resistance(Rs) and shunt resistance(Rsh) have been determined. The effect of ITO film thickness on silicon solar cells is also observed.

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Khosravi, Payam, Seyyed Ali Seyyed Seyyed Ebrahimi, Zahra Lalegani, and Bejan Hamawandi. "Anisotropic Magnetoresistance Evaluation of Electrodeposited Ni80Fe20 Thin Film on Silicon." Micromachines 13, no. 11 (October 22, 2022): 1804. http://dx.doi.org/10.3390/mi13111804.

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In this study, a simple growth of permalloy NiFe (Py) thin films on a semiconductive Si substrate using the electrochemical deposition method is presented. The electrodeposition was performed by applying a direct current of 2 mA/cm2 during different times of 120 and 150 s and thin films with different thicknesses of 56 and 70 nm were obtained, respectively. The effect of Py thickness on the magnetic properties of thin films was investigated. Field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM), ferromagnetic resonance (FMR), anisotropic magnetoresistance (AMR), and magneto-optic Kerr effect (MOKE) analyses were performed to characterize the Py thin films. It was observed that the coercivity of the Py thin film increases by increasing the thickness of the layer. Microscopic images of the layers indicated granular growth of the Py thin films with different roughness values leading to different magnetic properties. The magnetic resonance of the Py thin films was measured to fully describe the magnetic properties of the layers. The magnetoresistance ratios of deposited Py thin films at times of 120 and 150 s were obtained as 0.226% and 0.235%, respectively. Additionally, the damping constant for the deposited sample for 120 s was estimated as 1.36 × 10−2, which is comparable to expensive sputtered layers’ characteristics.

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Beaucarne, Guy. "Silicon Thin-Film Solar Cells." Advances in OptoElectronics 2007 (December 17, 2007): 1–12. http://dx.doi.org/10.1155/2007/36970.

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We review the field of thin-film silicon solar cells with an active layer thickness of a few micrometers. These technologies can potentially lead to low cost through lower material costs than conventional modules, but do not suffer from some critical drawbacks of other thin-film technologies, such as limited supply of basic materials or toxicity of the components. Amorphous Si technology is the oldest and best established thin-film silicon technology. Amorphous silicon is deposited at low temperature with plasma-enhanced chemical vapor deposition (PECVD). In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si) is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.

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De Avillez, R. R., L. A. Clevenger, C. V. Thompson, and K. N. Tu. "Quantitative investigation of titanium/amorphous-silicon multilayer thin film reactions." Journal of Materials Research 5, no. 3 (March 1990): 593–600. http://dx.doi.org/10.1557/jmr.1990.0593.

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Growth of amorphous-titanium-silicidc and crystalline C49 TiSi2 in titanium/amorphous-silicon multilayer films was investigated using a combination of differential scanning calorimetry (DSC), thin film x-ray diffraction, Auger depth profiling, and cross-sectional transmission electron microscopy. The multilayer films had an atomic concentration ratio of 1Ti to 2Si and a modulation period of 30 nm. In the as-deposited condition, a thin amorphous-titanium-silicide layer was found to exist between the titanium and silicon layers. Heating the multilayer film from room temperature to 700 K caused the release of an exothermic heat over a broad temperature range and an endothermic heat over a narrow range. The exothermic hump was attributed to thickening of the amorphous-titanium silicide layer, and the endothermic step was attributed to the homogenization and/or densification of the amorphous-silicon and amorphous-titanium-silicide layers. An interpretation of previously reported data for growth of amorphous-titanium-silicide indicates an activation energy of 1.0 ± 0.1 eV and a pre-exponential coefficient of 1.9 × 10−7 cm2/s. Annealing at high temperatures caused formation of C49 TiSi2 at the amorphous-titanium-silicide/amorphous-silicon interfaces with an activation energy of 3.1 ± 0.1 eV. This activation energy was attributed to both the nucleation and the early stages of growth of C49 TiSi2. The heat of formation of C49 TiSi2 from a reaction of amorphous-titanium-silicide and crystalline titanium was found to be –25.8 ± 8.8 kJ/mol and the heat of formation of amorphous-titanium-silicide was estimated to be –130.6 kJ/mol.

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Dore, Jonathon, Rhett Evans, Bonne D. Eggleston, Sergey Varlamov, and Martin A. Green. "Intermediate Layers for Thin-Film Polycrystalline Silicon Solar Cells on Glass Formed by Diode Laser Crystallization." MRS Proceedings 1426 (2012): 63–68. http://dx.doi.org/10.1557/opl.2012.866.

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ABSTRACTIntermediate layers between silicon and borosilicate glass are investigated for compatibility with a diode laser crystallization technique for fabrication of thin-film polycrystalline silicon solar cells. SiCx, SiNx and SiOx layers or multilayer stacks of these materials have allowed silicon films of 10μm thickness to be successfully crystallized by diode laser irradiation without dewetting, with each option offering different advantages. SiCx allows the most robust crystallization process, while SiOx is the best barrier to contamination and the most stable layer. SiNx offers the best anti-reflection coating for superstrate configured solar cells. Presently, best device performance is achieved with a SiOxintermediate layer with cells achieving up to ∼540 mV open-circuit voltage.

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Ait-Hamouda, Kahina, A. Ababou, and N. Gabouze. "Optimization of DLC/PS Antireflection Coating Properties for Multicrystalline Silicon Solar Cells." Materials Science Forum 609 (January 2009): 179–82. http://dx.doi.org/10.4028/www.scientific.net/msf.609.179.

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In this work, we report on the results of using a Diamond-Like Carbon / Porous Silicon (DLC/PS) double layer as antireflection coating to enhance the performance of multicrystalline silicon photovoltaic cells. DLC layers were obtained by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The properties of these layers were investigated in order to establish the optimum preparation conditions for solar cell applications. Then, thin films of combined porous silicon-DLC structure were fabricated for antireflection coating use. The spectral response of a solar cell based on multicrystalline silicon (mc-Si) coated with a PS layer, formed by electrochemical process was enhanced compared to a cell without porous silicon layer as emitter. Further improvements are obtained by a deposition of a thin DLC film. The results of the solar cell parameters before and after porous silicon formation and DLC coating are discussed.

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Wang, Chao-Chun, Dong-Sing Wuu, Shui-Yang Lien, Yang-Shih Lin, Chueh-Yang Liu, Chia-Hsum Hsu, and Chia-Fu Chen. "Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer." International Journal of Photoenergy 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/890284.

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The nanocrystalline silicon-germanium (nc-SiGe) thin films were deposited by high-frequency (27.12 MHz) plasma-enhanced chemical vapor deposition (HF-PECVD). The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.

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Li, Ying Ge, and Dong Xing Du. "Influence of Hydrogen Dilution on Electrical Properties of Amorphous Silicon Thin Films Deposited on Glass Substrates." Advanced Materials Research 221 (March 2011): 117–22. http://dx.doi.org/10.4028/www.scientific.net/amr.221.117.

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Thin film Amorphous Silicon materials have found wide application in photovoltaic industry. In this paper, thin layers (around 300nm) of intrinsic hydrogenated amorphous silicon (a-Si:H) are fabricated on glass (Corning Eagle2000TM) substrates by employing plasma enhanced chemical vapor deposition (PECVD) system with gas sources of silane and hydrogen. The deposited thin films are proven to be material of amorphous silicon by Raman spectroscopy measurement and their electronic transport properties are thoroughly characterized in terms of photoconductivity, dark conductivity and photo response. The effect of Hydrogen dilution on electrical properties are investigated for a-Si:H thin films deposited in the temperatures range of 150~200°C. Results indicate that a-Si:H thin films on glass substrate owns device-quality electrical properties and could be applied on fabricating thin film solar cells as the absorber layer material and on other photovoltaic or photo electronic devices.

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Hüger, Erwin, Chao Jin, Daniel Uxa, and Harald Schmidt. "C-Rate Capability of Ion-Beam Sputter Deposited Silicon, Carbon and Silicon/Carbon Multilayer Thin Films for Li-Ion Batteries." Journal of The Electrochemical Society 169, no. 8 (August 1, 2022): 080525. http://dx.doi.org/10.1149/1945-7111/ac8a79.

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Silicon is highly desired as high-energy density active Li storage material in Li-ion batteries, but usually does not withstand extended cycling. This work examines the C-rate capability up to Li plating and the long term cycling for ion-beam sputter-deposited amorphous (Si/C) × 10 multilayers (MLs) (with individual layer thicknesses between 5 and 27 nm), as well as for amorphous silicon and carbon single layers (with film thicknesses between 14 and 230 nm). Differential capacity plots were analyzed to examine the lithiation and delithiation mechanism. The silicon single-layers are stable for the first five cycles only, with a behavior of thinner films similar to supercapacitors. The carbon single layers show good cycling stability but also low capacities similar to graphite. The combination of silicon and carbon within Si/C MLs improved capacity and cycling behavior. The Li+ insertion and extraction process from the Si/C MLs is reversible and dominated by silicon. It coincides even at high currents (10C) and after hundreds of cycles with that of the thicker silicon film at its initial cycles. The MLs combine the positive property of carbon (reversible cycling) and of silicon (high capacity). Thinner carbon layers in the ML increase the silicon capacity for all cycles. The topic of irreversible Li-losses is discussed.

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Deák, András, Erzsébet Hild, Attila L. Kovács, and Zoltán Hórvölgyi. "Characterisation of Solid Supported Nanostructured Thin Films by Scanning Angle Reflectometry and UV-Vis Spectrometry." Materials Science Forum 537-538 (February 2007): 329–36. http://dx.doi.org/10.4028/www.scientific.net/msf.537-538.329.

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Nanostructured Langmuir-Blodgett (LB) films of Stöber-silica nanoparticles have been prepared on silicon and quartz glass substrates. The deposited layers were investigated using scanning angle reflectometry and UV-Vis spectroscopy. The reflectivity and the transmittance spectra of the LB films were evaluated using a model based on thin layer optics. Film thickness and effective refractive index of the films were determined. From the refractive index values the volume fraction of the particles in the film was estimated by effective medium approach.

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Wang, Dashan, James J. Tunney, Xiaomei Du, Michael L. Post, and Raynald Gauvin. "Transmission electron microscopy investigation of interfacial reactions between SrFeO3 thin films and silicon substrates." Journal of Materials Research 22, no. 1 (January 2007): 76–88. http://dx.doi.org/10.1557/jmr.2007.0005.

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The SrFeO3/SiO2/Si thin film system has been studied using transmission electron microscopy (TEM). The thin films of SrFeO3 were grown by pulsed laser deposition onto silicon substrates with a SiO2 buffer layer at room temperature (RT) and 700 °C and subjected to annealing for various periods of time at temperature T = 700 °C. Transmission electron microscopy characterization showed that the microstructure of the film deposited at room temperature contained crystalline and amorphous layers. Silicon diffusion into SrFeO3 films occurred at the SiO2 interface for the samples deposited at 700 °C and for those films annealed at 700 °C. The silicon diffusion-induced interfacial reactions resulted in the phase transformations and the growth of complex crystalline and amorphous phases. The principal compositions of these phases were Sr(Fe,Si)12O19, SrOx and amorphous [Sr-Fe-O-Si].

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Sriram, S., M. Bhaskaran, D. R. G. Mitchell, K. T. Short, A. S. Holland, and A. Mitchell. "Microstructural and Compositional Analysis of Strontium-Doped Lead Zirconate Titanate Thin Films on Gold-Coated Silicon Substrates." Microscopy and Microanalysis 15, no. 1 (January 15, 2009): 30–35. http://dx.doi.org/10.1017/s1431927609090072.

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AbstractThis article discusses the results of transmission electron microscopy (TEM)-based characterization of strontium-doped lead zirconate titanate (PSZT) thin films. The thin films were deposited by radio frequency magnetron sputtering at 300°C on gold-coated silicon substrates, which used a 15 nm titanium adhesion layer between the 150 nm thick gold film and (100) silicon. The TEM analysis was carried out using a combination of high-resolution imaging, energy filtered imaging, energy dispersive X-ray (EDX) analysis, and hollow cone illumination. At the interface between the PSZT films and gold, an amorphous silicon-rich layer (about 4 nm thick) was observed, with the film composition remaining uniform otherwise. The films were found to be polycrystalline with a columnar structure perpendicular to the substrate. Interdiffusion between the bottom metal layers and silicon was observed and was confirmed using secondary ion mass spectrometry. This occurs due to the temperature of deposition (300°C) being close to the eutectic point of gold and silicon (363°C). The diffused regions in silicon were composed primarily of gold (analyzed by EDX) and were bounded by (111) silicon planes, highlighted by the triangular diffused regions observed in the two-dimensional TEM image.

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Zhao, Xiao Feng, Dian Zhong Wen, Cui Cui Zhuang, Bing Han, Yue Li, Jing Ya Cao, and Lei Li. "Fabrication and Characteristics of the Nano-Polysilicon Thin Film Transistors." Key Engineering Materials 562-565 (July 2013): 13–17. http://dx.doi.org/10.4028/www.scientific.net/kem.562-565.13.

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In this paper, we report the fabrication and characteristics of the top-gated thin film transistors (TFTs) with nanopolysilicon as active layers. The nanopolysilicon thin films were deposited on SiO2 layers by LPCVD and the SiO2 layers were grown on the single silicon substrates. Then the nanopolysilicon thin film transistors with different thin film thicknesses and different channel width length radios were fabricated by CMOS technology, in which the thicknesses of channel layers were 90nm and 120nm, and the channel width length radios were 160μm/160μm, 320μm/160μm and 640μm/160μm, respectively. The experiment results show that drain current is in proportion to channel width length radio. In addition, when the thickness of the nanopolysilicon thin film is 90nm and the channel width length radio is 640μm/160μm, the on/off current radio reaches 106.

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Zeman, M., and J. Krc. "Optical and electrical modeling of thin-film silicon solar cells." Journal of Materials Research 23, no. 4 (April 2008): 889–98. http://dx.doi.org/10.1557/jmr.2008.0125.

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This article focuses on the modeling and simulation of thin-film silicon solar cells to obtain increased efficiency. Computer simulations were used to study the performance limits of tandem and triple-junction, silicon-based solar cells. For the analysis, the optical simulator SunShine, which was developed at Ljubljana University, and the optoelectrical simulator ASA, which was developed at Delft University of Technology, were used. After calibration with realistic optical and electrical parameters, we used these simulators to study the scattering properties required, the absorption in nonactive layers, antireflective coatings, and the crucial role of the wavelength-selective intermediate reflector on the performance of the solar cells. Careful current matching was carried out to explore whether a high photocurrent [i.e., more than 15 mA/cm2 for a tandem hydrogenated amorphous silicon (a-Si:H)/hydrogenated microcrystalline silicon (μc-Si:H) solar cell and 11 mA/cm2 for a triple-junction a-Si:H/amorphous silicon germanium (a-SiGe:H)/μc-Si:H solar cell] could be obtained. In simulations, the extraction of the charge carriers, the open-circuit voltage, and the fill factor of these solar cells were improved by optimizing the electrical properties of the layers and the interfaces: a p-doped, a-SiC layer with a larger band gap (EG > 2 eV) and buffer layers at p/i interfaces were used. Simulations demonstrated that a-Si:H/μc-Si:H solar cells could be obtained with a conversion efficiency of 15% or higher, and triple-junction a-Si:H/a-SiGe:H/μc-Si:H solar cells with an efficiency of 17%.

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Limmanee, Amornrat, Patipan Krudtad, Sasiwimon Songtrai, Suttinan Jaroensathainchok, Taweewat Krajangsang, Jaran Sritharathikhun, and Kobsak Sriprapha. "MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application." International Journal of Photoenergy 2014 (2014): 1–7. http://dx.doi.org/10.1155/2014/939040.

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We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc) and low fill factor (FF); however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H) film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% withVoc=0.86 V,Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2). The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.

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Nisar, Talha, Torsten Balster, and Veit Wagner. "Mechanical transfer of electrochemically grown molybdenum sulfide layers to silicon wafer." Journal of Applied Electrochemistry 51, no. 9 (May 13, 2021): 1279–86. http://dx.doi.org/10.1007/s10800-021-01570-0.

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Abstract Large area MoS2 ultra-thin film deposition is one of the big challenges in the recent years. Electrodeposition provides an opportunity to grow such ultra-thin films on large scale. However, the transfer of the electrochemically grown film is challenging. Standard transfer of those thin films is done by wet etching in which the underlying substrate is etched. In this work, the polymer coated electrodeposited MoS2 films on Au are separated mechanically from the underlying substrate by using ultra-sonication. Collapse of micron-sized bubbles produced by ultra-sonication at the interface of Au and silicon substrate provides enough energy for separation due to their weak adhesion. The Au layer is then removed by standard Au-etchant (K/KI) and the polymer coated film is transferred to a desired substrate. Ammonium tetrathiomolybdate (ATTM) has been used as precursor material for the electrodeposition of the films. Initial electrochemically grown films consist of MoS3 which is reduced to MoS2 by a post-annealing step at 450–900 °C. Obtained films are investigated by AFM, Raman, UV–Vis and XPS. Crystal quality improves by increasing the post-annealing temperature. The thickness of the thinnest film was found to be equivalent to 2 monolayers of MoS2, which is desirable for future electronics. Graphic abstract

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Tsui, Ting Y., Andrew J. McKerrow, and Joost J. Vlassak. "Constraint Effects on Thin Film Channel Cracking Behavior." Journal of Materials Research 20, no. 9 (September 2005): 2266–73. http://dx.doi.org/10.1557/jmr.2005.0317.

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One of the most common forms of cohesive failure observed in brittle thin film subjected to a tensile residual stress is channel cracking, a fracture mode in which through-film cracks propagate in the film. The crack growth rate depends on intrinsic film properties, residual stress, the presence of reactive species in the environments, and the precise film stack. In this paper, we investigate the effect of various buffer layers sandwiched between a brittle carbon-doped-silicate (CDS) film and a silicon substrate on channel cracking of the CDS film. The results show that channel cracking is enhanced if the buffer layer is more compliant than the silicon substrate. Crack velocity increases with increasing buffer layer thickness and decreasing buffer layer stiffness. This is caused by a reduction of the constraint imposed by the substrate on the film and a commensurate increase in energy release rate. The degree of constraint is characterized experimentally as a function of buffer layer thickness and stiffness, and compared to the results of a simple shear lag model that was proposed previously. The results show that the shear lag model does not accurately predict the effect of the buffer layer.

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Ahmed, Nafis, Arokiyadoss Rayerfrancis, Balaji Bhargav P., Balaji C, and Ramasamy P. "Tuning the optoelectronic properties of AZO thin films for silicon thin film solar cell applications." European Physical Journal Applied Physics 96, no. 3 (December 2021): 30105. http://dx.doi.org/10.1051/epjap/2021210186.

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Al-doped ZnO (AZO) thin films are deposited using dc magnetron sputtering and the process conditions are optimized to obtain transparent conducting electrode (TCE) with desirable properties suitable for photovoltaic applications. In the course, the effects of deposition parameters such as growth temperature, deposition time and plasma power density on the structural and optoelectronic properties were investigated using suitable characterization techniques. XRD analysis of the deposited films at different process conditions showed a strong c-axis preferred orientation. The surface roughness of the deposited films was examined using AFM analysis. Elemental analysis was carried out using XPS. The resistivity and sheet resistance of the thin films decreased with increase in temperature, deposition time and power density. The optimized films deposited at 250 °C resulted in electrical resistivity of 6.23 × 10−4 Ωcm, sheet resistance of 9.2 Ω/□ and exhibited an optical transmittance of >85% in the visible range. Figure of merit (FOM) calculations were carried out to analyze the suitability of deposited thin films for thin film amorphous silicon solar cell applications. The photogain of optimized intrinsic a-Si:H layer was in the range of 104, whereas no photogain was observed in doped a-Si:H layers. The thin film solar cell fabricated using the optimized AZO film as TCE exhibited power conversion efficiency of 6.24% when measured at AM 1.5 condition.

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ZHU, Y., and P. P. ONG. "THIN FILMS OF SILICON NANOPARTICLES EMBEDDED IN Al2O3 MATRICES." Surface Review and Letters 08, no. 05 (October 2001): 559–64. http://dx.doi.org/10.1142/s0218625x01001440.

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Silicon nanoparticles embedded in a host matrix of Al 2 O 3 thin film about 260 nm thick were prepared by using the pulsed laser deposition method. The laser target consisted of a small silicon wafer glued onto the surface of a circular Al 2 O 3 plate, which was set to rotate uniformly when laser-ablating. TEM and EDS results showed that the films consisted of silicon nanoparticles in the form of nanocrystals with diameters of less than 6 nm dispersed in the amorphous Al 2 O 3 matrices. Strong PL from the as-prepared and the annealed samples was observed. The SIMS depth profile of the silicon content of the film indicated that the silicon nanoparticles in the Al 2 O 3 matrices were arranged in fairly well demarcated thin layers sandwiched between layers of the host material. FTIR results evidently suggested that the encapsulating amorphous Al 2 O 3 material forms a good host for the prevention of atmospheric oxidation of the silicon nanoparticles. However, prolonged annealing can cause the silicon nanoparticle surface interfacing the host material to be oxidized by the oxygen mostly from the Al 2 O 3 molecules and be bonded to the Al or O–Al bonds.

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Chen, T., Y. Huang, A. Dasgupta, M. Luysberg, L. Houben, D. Yang, R. Carius, and F. Finger. "Microcrystalline silicon carbide window layers in thin film silicon solar cells." Solar Energy Materials and Solar Cells 98 (March 2012): 370–78. http://dx.doi.org/10.1016/j.solmat.2011.11.039.

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Tan, Xueshi, Bingxue Mao, Feng Zhang, and Jingjing Yang. "The Development and Application of High-Efficiency Low-Cost Silicon Thin Film Solar Cell." MRS Proceedings 1771 (2015): 97–107. http://dx.doi.org/10.1557/opl.2015.353.

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ABSTRACTFor the industrial application of silicon thin film solar cells, the current focus is on how to realize high-efficiency low-cost production process and minimize light-induced degradation effect, thus effectively reducing the balance-of-system (BOS) costs of system integration. In this paper, a brief introduction based on our development and application in this area is presented, highlighting in the achievement of some layers in a-Si:H/μc-Si:H tandem solar cell by optimizing the property of single layers, such as amorphous intrinsic layer, intermediate reflective layer and microcrystalline intrinsic layer. After transferring the process achievement to the industrial production line, we obtained the low-cost thin-film silicon solar cells with high photovoltaic conversion efficiency of 10.2%.

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Pa, P. S. "Design of Thin Films Removal on Solar-Cells Silicon-Wafers Surface." Applied Mechanics and Materials 121-126 (October 2011): 805–9. http://dx.doi.org/10.4028/www.scientific.net/amm.121-126.805.

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In this study, the design of the mechanism of a recycling system using composite electrochemical and chemical machining for removing the surface layers from silicon wafers of solar cells is studied. The reason for constructing a new engineering technology and developing a clean production approach to perform the removal of surface thin film layers from silicon wafers is to develop a mass production system for recycling defective or discarded silicon wafers of solar cells that can reduce pollution. The goal of the development is to replace the current approach, which uses strong acid and grinding and may cause damage to the physical structure of silicon wafers and cause pollution to the environment, to efficiently meet the requirements of industry for low cost. It can not only perform highly efficient recycling of silicon wafers from discarded solar cells to facilitate the following remelting and crystal pulling process, but can also recycle defective silicon wafers during the fabrication process of solar cells for rework. A small gap width between cathode and workpiece, higher temperature, higher concentration, or higher flow rate of machining fluid corresponds to a higher removal rate for Si3N4 layer and epoxy film. Pulsed direct current can improve the effect of dregs discharge and is advantageous to associate with the fast feed rate of workpiece, but raises the current rating. A higher feed rate of silicon wafers of solar cells combine with enough electric power produces fast machining performance. The electrochemical and chemical machining just needs quite short time to make the Si3N4 layer and epoxy film remove easily and cleanly. An effective and low-cost recycle process for silicon wafers of solar cells is presented.

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Kuo, Yue. "Thin‐film transistors with multistep deposited amorphous silicon layers." Applied Physics Letters 67, no. 15 (October 9, 1995): 2173–75. http://dx.doi.org/10.1063/1.115093.

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Hebling, C., S. W. Glunz, C. Schetter, J. Knobloch, and A. Räuber. "Silicon thin-film solar cells on insulating intermediate layers." Solar Energy Materials and Solar Cells 48, no. 1-4 (November 1997): 335–42. http://dx.doi.org/10.1016/s0927-0248(97)00145-1.

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Cheng, I.-Chun, Steven Allen, and Sigurd Wagner. "Evolution of nanocrystalline silicon thin film transistor channel layers." Journal of Non-Crystalline Solids 338-340 (June 2004): 720–24. http://dx.doi.org/10.1016/j.jnoncrysol.2004.03.076.

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Ivey, Douglas G., and Dashan Wang. "Phase formation in Fe–Si thin-film diffusion couples." Canadian Journal of Physics 70, no. 10-11 (October 1, 1992): 860–65. http://dx.doi.org/10.1139/p92-136.

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The formation of FeSi2, as well as other iron silicides, from solid-state reactions of Fe thin films on Si substrates has been investigated. Iron layers, approximately 50 nm thick, were deposited by electron beam evaporation on <100> oriented Si substrates. Silicon (≈35 nm) and SiO2 (≈170 nm) layers were deposited on top of the Fe layer in the same evaporator without breaking the chamber vacuum. SiO2 acted as a protective layer during subsequent annealing in a nitrogen ambient. All annealed samples were examined using X-ray diffraction and transmission electron microscopy (TEM). Both plan view and cross section specimens were prepared for TEM. Detailed phase analysis was accomplished through the various electron diffraction and X-ray microanalysis techniques available with the TEM. Silicon dissolved readily in Fe, at temperatures lower than 300 °C, up to the solubility limit of ≈26 at%Si. FeSi formation followed (350 °C), with semiconducting FeSi2 forming at 500 °C. The Fe–amorphous Si interface was more reactive, with silicide formation occurring at lower annealing temperatures (300 °C). There was also evidence that FeSi2 formed directly from α-Fe and amorphous Si.

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LEI, Q. S., H. X. XU, and J. P. XU. "DEVELOPMENT OF HIGHLY CONDUCTIVE P-TYPE MICROCRYSTALLINE SILICON FILMS FOR N–I–P FLEXIBLE SOLAR CELLS APPLICATION." International Journal of Modern Physics B 24, no. 28 (November 10, 2010): 5527–38. http://dx.doi.org/10.1142/s0217979210056931.

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In this paper, we reported highly conductive p-type microcrystalline silicon (μc- Si:H ) films deposited on amorphous silicon (a- Si:H ) surface by very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) technique. Hydrogen plasma treatment of amorphous silicon surface and nucleation layers were introduced prior to μc- Si:H films deposition. The film properties were investigated by using Raman spectra, scanning electron microscope (SEM), optical transmission and reflection, as well as dark conductivity measurements. The influence of plasma treatment and nucleation layer on the growth and properties of the thin p-type μc- Si:H films was studied. It is demonstrated that the hydrogen plasma treatment of a- Si:H films gives rise to the deposition of μc- Si:H on the a- Si:H surface. Also, the growth and properties of the μc- Si:H films are strongly dependent on the nucleation layer. The dark conductivity (σd) and crystalline fraction increase with the plasma treatment time and attain high values at about 600 s. A p-type μc- Si:H film with conductivity of 0.0875 Scm-1 at a thickness of 30 nm was obtained. The film was introduced as window layers for flexible solar cells. An efficiency of about 7.15% was obtained.

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31

HOU, Q. R., B. F. GU, Y. B. CHEN, and Y. J. HE. "INFLUENCE OF SILICON ADDITION ON SEEBECK COEFFICIENT OF MnSi1.7 FILMS." International Journal of Modern Physics B 25, no. 18 (July 20, 2011): 2393–402. http://dx.doi.org/10.1142/s0217979211101594.

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MnSi 1.7 films with different thicknesses (16–242 nm) are prepared by magnetron sputtering and electron beam evaporation. When the MnSi 1.7 film thickness is about 40 nm or above, MnSi 1.7 films are p-type in the whole temperature range (300–700 K) in agreement with reports in literature. By co-sputtering of MnSi 1.85 and silicon targets or deposition of Si / Mn multi-layers with a larger thickness ratio, silicon is added to the films and the Seebeck coefficients transform from positive to negative with increasing temperature. The Seebeck coefficients at room temperature and 633 K are +0.098 mV/K and -0.358 mV/K, respectively. By reducing the MnSi 1.7 film thickness to 27 nm, the transition of Seebeck coefficient from positive to negative is also observed although silicon is not added intentionally. When an ultra-thin aluminum layer is deposited between MnSi x(x < 1.7) and Si layers to enhance silicon diffusion, the p- to n-type transition temperature decreases about 100 K. The silicon-added MnSi 1.7 films usually have higher electrical resistivity.

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32

Znajdek, Katarzyna, Natalia Szczecińska, Maciej Sibiński, Przemysław Czarnecki, Gabriela Wiosna-Sałyga, Aleksandra Apostoluk, Fabien Mandrolo, Szymon Rogowski, and Zbigniew Lisik. "Energy converting layers for thin-film flexible photovoltaic structures." Open Physics 16, no. 1 (December 26, 2018): 820–25. http://dx.doi.org/10.1515/phys-2018-0102.

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Abstract The paper presents research focused on the efficiency improvement of inorganic flexible thin-film solar cells, using energy converting layers. The light capture enhancement was achieved through the introduction of layers based on rare-earth elements, as top coatings on the amorphous silicon photovoltaic structures. Such luminescent layers are converting high-energy photons into low-energy ones, which are more efficient in photovoltaic conversion of the investigated solar cells. Towards this goal, powders consisting rare-earth elements were applied as active particles in polymer layer. For practical experiments, the screen-printing method, as a cheap, reliable and industrially-ready technology was used for layers deposition. For the experiments two compositions were selected: Sr4Al14O25: Eu,Dy (BGL-300M) and SrAl2O4: Eu,Dy (G-300M). These materials are characterized by excellent thermal and optical stability and interesting luminescent properties (they absorb ultraviolet and emit in the visible range). For the verification of investigated materials and methods, various compositions of powders and proportions were tested and analyzed.

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Pereira, Luís, Pedro Barquinha, Elvira Fortunato, and Rodrigo Martins. "Poly-Si Thin Film Transistors: Effect of Metal Thickness on Silicon Crystallization." Materials Science Forum 514-516 (May 2006): 28–32. http://dx.doi.org/10.4028/www.scientific.net/msf.514-516.28.

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In this work metal induced crystallization (MIC) using nickel (Ni) was employed to obtain poly-Si by crystallization of amorphous films for application as active layer in TFTs. Ni layers with thicknesses of 0.5 nm, 1 nm and 2 nm were used to crystallize the silicon. The TFTs were produced with a bottom gate configuration using a multi-layer Al2O3/TiO2 insulator produced by atomic layer deposition (ALD) as gate dielectric. The best performances of the TFT produced were obtained when using very thin Ni layers for the crystallization. This is attributed to a lower metal contamination and to the enhancement of grain size, as a result of the lower nucleation density achieved, when using the thinnest Ni layer. Devices that exhibit effective mobility of 45.5 cm2V-1s-1 and an on/off ratio of 5.55×104 were produced using a 0.5 nm Ni layer to crystallize the active channel area.

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Li, Zeyu, Rusli E, Chenjin Lu, Ari Prakoso, Martin Foldyna, Rasha Khoury, Pavel Bulkin, et al. "Optical Study and Experimental Realization of Nanostructured Back Reflectors with Reduced Parasitic Losses for Silicon Thin Film Solar Cells." Nanomaterials 8, no. 8 (August 18, 2018): 626. http://dx.doi.org/10.3390/nano8080626.

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We study light trapping and parasitic losses in hydrogenated amorphous silicon thin film solar cells fabricated by plasma-enhanced chemical vapor deposition on nanostructured back reflectors. The back reflectors are patterned using polystyrene assisted lithography. By using O2 plasma etching of the polystyrene spheres, we managed to fabricate hexagonal nanostructured back reflectors. With the help of rigorous modeling, we study the parasitic losses in different back reflectors, non-active layers, and last but not least the light enhancement effect in the silicon absorber layer. Moreover, simulation results have been checked against experimental data. We have demonstrated hexagonal nanostructured amorphous silicon thin film solar cells with a power conversion efficiency of 7.7% and around 34.7% enhancement of the short-circuit current density, compared with planar amorphous silicon thin film solar cells.

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MATSUMOTO, YASUHIRO, MASAO TAMURA, RENE ASOMOZA, and ZHENRUI YU. "POLY-SILICON THIN FILMS PREPARED BY LOW TEMPERATURE ALUMINUM-INDUCED CRYSTALLIZATION." Modern Physics Letters B 15, no. 17n19 (August 20, 2001): 716–21. http://dx.doi.org/10.1142/s0217984901002373.

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P-type poly-Si thin films prepared by low temperature Aluminum-induced crystallization and doping are reported. The starting material was boron-doped a-Si:H prepared by PECVD on glass substrates. Aluminum layers with different thicknessess were evaporated on a-Si:H surface and conventional thermal annealing was performed at temperatures ranging from 300 to 550°C. XRD, SIMS, TEM and Hall effect measurements were carried out to characterize the annealed films. Results show that a-Si:H contacted with adequate Al could be crystallized at temperature as low as 300°C after annealing for 60 minutes. This material has high carrier concentration as well as high Hall mobility can be used as a p-layer or seed layer for thin film poly-Si solar cells. The technique reported here is compatible with PECVD process.

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36

Van Hoeymissen, Jan, Valerie Depauw, Izabela Kuzma-Filipek, Kris Van Nieuwenhuysen, Maria Recaman Payo, Yu Qiu, Ivan Gordon, and Jef Poortmans. "The use of porous silicon layers in thin-film silicon solar cells." physica status solidi (a) 208, no. 6 (December 17, 2010): 1433–39. http://dx.doi.org/10.1002/pssa.201000103.

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37

Kim, Taekyun, Peter J. Gress, and Sergey Varlamov. "Metallisation and Interconnection of e-Beam Evaporated Polycrystalline Silicon Thin-Film Solar Cells on Glass." International Journal of Photoenergy 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/271738.

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One inherent advantage of thin-film technology is the possibility of using monolithic integration for series interconnection of individual cells within large-area modules. Polycrystalline silicon thin-film solar cells do not rely on transparent conducting oxide layers as the high sheet conductivity of the emitter and BSF layers enables the lateral flow of current from the film to the metal contacts. This paper presents a new method for the fabrication of e-beam evaporated polycrystalline thin-film photovoltaic minimodules on glass. The method involves electrically isolating minicells, by laser scribing, and then forming an isolation layer on each laser scribe. The main advantage of this metallisation is to have a single aluminium evaporation step for the formation of finger and busbar features, as well as for series interconnection.

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38

Chen, Bitao, Yingke Zhang, Qiuping Ouyang, Fei Chen, Xinghua Zhan, and Wei Gao. "The SiNx films process research by plasma-enhanced chemical vapor deposition in crystalline silicon solar cells." International Journal of Modern Physics B 31, no. 16-19 (July 26, 2017): 1744101. http://dx.doi.org/10.1142/s021797921744101x.

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SiNx thin film has been widely used in crystalline silicon solar cell production because of the good anti-reflection and passivation effect. We can effectively optimize the cells performance by plasma-enhanced chemical vapor deposition (PECVD) method to change deposition conditions such as temperature, gas flow ratio, etc. In this paper, we deposit a new layer of SiNx thin film on the basis of double-layers process. By changing the process parameters, the compactness of thin films is improved effectively. The NH3passivation technology is augmented in a creative way, which improves the minority carrier lifetime. In sight of this, a significant increase is generated in the photoelectric performance of crystalline silicon solar cell.

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39

Ishikawa, Ryousuke, Hidetoshi Wada, Yasuyoshi Kurokawa, Porponth Sichanugrist, and Makoto Konagai. "Laser Scribing of W-textured ZnO Substrates Using Green Laser." MRS Proceedings 1493 (2013): 207–12. http://dx.doi.org/10.1557/opl.2013.233.

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ABSTRACTThin-film silicon solar cells have been attracted a lot of intention as low-cost solar cells. One of the most important technologies for improving their performances is light trapping. We have demonstrated the high potential of double-textured zinc oxide (ZnO) thin films used as front transparent conductive oxide (TCO) films due to further enhancement of their light-trapping effects. Although the laser scribing method has already been well established for low-cost thin-film silicon solar cell module manufacturing, laser scribing technique on double-textured ZnO is new and still a challenging issue. In this study, we firstly demonstrated the availability of laser scribing for amorphous silicon (a-Si) solar cells fabricated on double-textured ZnO substrates. It is general to utilize lasers with wavelength of 1.06 μm and 532 nm for scribing of TCO and silicon layer, respectively. Here we attempted to scribe both of TCO and silicon layers using a 532 nm wavelength laser (green laser) for process simplifying.

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40

Dubbelday, W. B., D. M. Szaflarskf, R. L. Shimabukuro, and S. D. Russell. "Study of Photoluminescent thin film Porous Silicon on Sapphire." MRS Proceedings 283 (1992). http://dx.doi.org/10.1557/proc-283-161.

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ABSTRACTPhotoluminescence in porous silicon on sapphire (SOS) prepared through chemical staining and photo-initiated chemical etch is demonstrated. SOS consists of single crystal quality material on a transparent substrate through which photoluminescence can be excited and observed. Porous silicon films as thin as 270 nm are shown to photoluminesce. This study explores the effect of varying film thickness and crystal quality on the photoluminescent emission from porous silicon. Introduction of crystal defects by ion implantation is used to create controlled damaged layers prior to fabricating porous silicon. No photoluminescence is observed from chemically stained or electrochemically etched amorphized layers. Corroborative results are obtained using LPCVD deposited amorphous silicon layers.

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41

Cuony, Peter, Duncan T. L. Alexander, Linus Löfgren, Michael Krumrey, Michael Marending, Mathieu Despeisse, and Christophe Ballif. "Mixed phase silicon oxide layers for thin-film silicon solar cells." MRS Proceedings 1321 (2011). http://dx.doi.org/10.1557/opl.2011.813.

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ABSTRACTLower absorption, lower refractive index and tunable resistance are three advantages of doped silicon oxide containing nanocrystalline silicon grains (nc-SiOx) compared to doped microcrystalline silicon, for the use as p- and n-type layers in thin-film silicon solar cells. In this study we show how optical, electrical and microstructural properties of nc-SiOx layers depend on precursor gas ratios and we propose a growth model to explain the phase separation in such films into Si-rich and O-rich regions as visualized by energy-filtered transmission electron microscopy.

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42

Tas, G., R. J. Stoner, H. J. Maris, G. W. Rubloff, G. S. Oehrlein, and J. M. Halbout. "Detection of Thin Interfacial Layers by Picosecond Ultrasonics." MRS Proceedings 259 (1992). http://dx.doi.org/10.1557/proc-259-231.

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ABSTRACTWe report on experiments in which the picosecond ultrasonics technique is used to detect the existence of thin layers of CFx at the interface between a metal film (Al) and a silicon substrate. Acoustic vibrations are excited in the metal film when a picosecond light pulse is absorbed. The thickness of the CFx can be estimated from the rate at which these vibrations are damped out via transmission of sound into the silicon substrate through the CFx layer. We show that thin CFx layers can also be detected via their effect on the rate at which heat flows from the metal to the silicon.

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43

Kamiyama, Eiji, and Koji Sueoka. "First Principles Analysis of Ultra-Thin Silicon Films with Dimer Structures." MRS Proceedings 1370 (2011). http://dx.doi.org/10.1557/opl.2011.1090.

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ABSTRACTThe impact of dimer formations at the surfaces of the internal atoms of silicon (Si) thin film was evaluated by examining silicon-on-insulator (SOI) and plate models. In the SOI models, a dimer formation was modeled at one side of the Si thin film. The plate models had two dimers at each surface, which had been considered as a Si bulk model in previous studies. First principles calculation showed that the deviations of Si atoms from the first to fourth layers of the SOI models did not differ remarkably from those of the plate models. The internal atoms deeper than the fifth layer showed near-zero deviation in some of the SOI models and had evident non-zero deviation in the other SOI models. All the SOI and plate models showed lower Si atom self-energy than in the Si bulk. The layer-to-layer distance of internal atoms in the films became longer than that of atoms in Si bulk. These results indicated that (i) Si films with dimer surfaces are relaxed by deviations in the whole film, and (ii) even the thick plate model with 32 layers dose not reveal the nature of Si bulk.

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44

Zang, Ming, Dennis L. Polla, Shayne M. Zurn, and Tianhong Cui. "Stress and Deformation of Pzt Thin Film on Silicon Wafer Due to Thermal Expansion." MRS Proceedings 574 (1999). http://dx.doi.org/10.1557/proc-574-107.

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AbstractStress and deformation of PZT thin films deposited on silicon wafers due to thermal expansion during the annealing process are modeled using a 3-D shell element of ANSYS. Two different designs of PZT thin films on the wafer are modeled. The first design is a PZT/Pt/Ti/silicon dioxide/silicon wafer, which is used for making acoustic emission sensors. The second design is a PZT/Pt/Ti/silicon dioxide/silicon nitride/silicon dioxide/silicon wafer, commonly used in fabrication of cantilever beams. For the design without the silicon nitride layer, the thermal stress of the PZT film is 298MPa, Pt 1280MPa, Ti 647MPa, the silicon dioxide layer is 228MPa, and the silicon wafer is 0.41–1.67MPa. For the design with silicon nitride, the thermal stresses are: PZT 301MPa, Pt 1280MPa, Ti 651MPa, silicon dioxide 226MPa, silicon nitride 416MPa, silicon dioxide 226MPa, and silicon wafer 1.05–4.23MPa. The residual stress of the PZT film is measured at 200–25OMPa for the design without silicon nitride, and 336MPa for the design with silicon nitride. Comparisons of the thermal stress with the tensile or proof stress of material for each layer indicate that thermal stress of the PZT film is slightly greater than its bulk tensile stress, that of Pt film is five times greater than its bulk tensile stress, and that of Ti film is approximately equal to its bulk tensile stress. The thermal stresses of silicon dioxide, silicon nitride, and silicon wafer layers are far smaller than their proof stresses.

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45

Winz, K., B. Rech, T. H. Eickhoff, C. Beneking, C. M. Fortmann, P. Hapke, and H. Wagner. "Optoelectronic Properties of Thin Amorphous and Micro-Crystalline p-Type Films Developed for Amorphous Silicon-Based Solar Cells." MRS Proceedings 420 (1996). http://dx.doi.org/10.1557/proc-420-819.

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AbstractVIIF-PECVD at 110 MI-z was used to deposit micro-crystalline p-layers on glass substrates for detailed analysis and onto ZnO coated substrates for incorporation into p-i-n solar cell structures. Solar cell and film analysis confirmed that the films incorporated into the solar cells contained significant crystalline silicon volume fractions despite being only 30 nm thick. The p-i-n solar cells employing a micro-crystalline silicon p-layer deposited on ZnO coated substrates had series resistances, fill factors and Voc similar to those of the reference solar cells deposited onto SnO2 coated substrates and having optimized amorphous silicon-carbon p-layers. The short circuit current of the micro-crystalline p-layer case was 10 percent lower than that of the reference cell indicating that further optimization is required.

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46

Evtukh, Anatoli A., Volodimir G. Litovchenko, Yurii M. Litvin, Dmitrii V. Fedin, Yurii V. Rassamakin, Andrey V. Sarikov, Andrei G. Chakhovskoi, Charles E. Hunt, and Thomas E. Felter. "Porous Silicon Coated with Ultra-Thin Diamond-Like Carbon Film Cathodes." MRS Proceedings 685 (2001). http://dx.doi.org/10.1557/proc-685-d15.4.1.

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AbstractThe main requirements to electron field emission cathodes are their efficiency, stability and uniformity. In this work we combined the properties of porous silicon layers and diamond-like carbon (DLC) film to obtain emission cathodes with improved parameters. The layered structures of porous silicon and DLC film were formed both on flat n-Si surface and silicon tips created by chemical etching. The conditions of the anodic and stain etching of silicon in HF containing solution under the illumination have been widely changed. The influence of thin (≤10nm) DLC film coating of the porous silicon layer on electron emission has been investigated. The parameters of emission efficiency such as field enhancement coefficient, effective emission areas and threshold voltages have been estimated from current-voltage dependencies to compare and characterize different layered structures. The improvement of the emission efficiency of silicon tip arrays with porous layers coated with thin DLC film has been observed. These silicon-based structures are promising for flat panel display applications.

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47

Conde, J. P., P. Alpuim, and V. Chu. "Thin-Film Transistors on PET at 100°C." MRS Proceedings 715 (2002). http://dx.doi.org/10.1557/proc-715-a3.1.

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AbstractBottom-gate amorphous silicon thin-film transistors were fabricated on a polyethylene terephthalate substrate. The maximum processing temperature was 100°C. The transistor characteristics are comparable, although still inferior, to those of standard amorphous silicon transistors fabricated on glass substrates. To obtain these characteristics, an extended anneal the processing temperature was required. The devices were fabricated using separately optimized low-temperature active layer, contact layer and gate dielectric layer. To achieve good electronic properties for these layers, hydrogen dilution was required.

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48

Chan, Kevin K., Young H. Lee, and Carol L. Stanis. "Electrical Characteristics of Ultra-Thin Multi-Layers of Poly-Si and Silicon Dioxide." MRS Proceedings 358 (1994). http://dx.doi.org/10.1557/proc-358-845.

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ABSTRACTRough-surface polycrystalline silicon films have been used for fabrication of electrically erasable-programmable read-only-memories (EEPROM). Silicon-Rich Oxides (SRO), also known as semi-insulating polycrystalline silicon (SIPOS), have been recommended for use as electron injectors. The advantage of SRO as injectors is that both the bottom and top surfaces of the film can be used to obtain high field enhancement. An ultra-thin multi-layer structure of silicon and silicon dioxide has been fabricated by low pressure chemical vapor deposition (LPCVD). High resolution TEM shows alternating layers of 50 A thick SiO2 and polycrystalline Si (grain size ∼ 80 A) films were deposited and MOS capacitors using this multilayer dielectric were studied to understand their electrical characteristics. Both I-V and C-V measurements show that the Fowler-Nordheim tunneling current is proportional to the number of polycrystalline layers. The “turn-on” voltage of the tunneling current is determined by the thickness of first SiO2 layer, and the effective dielectric constant varies from 3.9 to 9.1, proportional to the number of poly-Si layers within the multi-layer structure (MLS). For a 350 Å stack (7 layers), the interface trap density, Dit, was 3×1010 traps/cm2, and the effective dielectric constant was roughly 9.

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Tseng, Wei-Tsu, Li-Wen Chen, and G. C. Tu. "Thermal Stresses, Interfacial Reactions and Microstructures of Al/Ti and Al/TiN Thin Films Encapsulated by SiOF." MRS Proceedings 476 (1997). http://dx.doi.org/10.1557/proc-476-267.

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AbstractVariations in stress and grain size of Ti- and TiN- capped Al thin films passivated by fluorinated silicon dioxide (SiOF) during repetitive thermal cycling are investigated. The amount of stress relaxation, elastic and plastic behavior of these thin film structures are compared. Ti and TiN cap layers strengthen the single Al film significantly while the presence of SiOF induces plastic deformation of metal layers. Less grain growth is associated with a dielectric passivated Al film. The penetration of fluorine into Al upon annealing can be reduced by a TiN barrier layer.

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Chason, E., T. R. Guilinger, M. J. Kelly, T. J. Headley, and A. J. Howard. "Non-Destructive Characterization of Porous Silicon Using X-Ray Reflectivity." MRS Proceedings 358 (1994). http://dx.doi.org/10.1557/proc-358-321.

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ABSTRACTUnderstanding the evolution of porous silicon (PS) layers at the early stages of growth is important for determining the mechanism of PS film growth and controlling the film properties. We have used X-ray reflectivity (XRR) to determine the evolution of layer thickness and interfacial roughness during the growth of thin PS layers (< 200 nm) prepared by electrochemical anodization. The porous layer grows at a constant rate for films as thin as 15 nm indicating a very short incubation period during which the surface may be electropolished before the PS structure begins to form. Interface roughness measurements indicate that the top surface of the film remains relatively smooth during growth while the roughness of the PS/silicon interface increases only slightly with film thickness. The XRR results are compared with results obtained from the same films by cross-sectional transmission electron microscopy (XTEM), atomic force microscopy (AFM) and gravimetry.

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Journal articles on the topic 'Thin film silicon layers'

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