Relevant bibliographies by topics / Thin film silicon layers

Academic literature on the topic 'Thin film silicon layers'

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Published: 4 June 2021
Last updated: 31 January 2023

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Journal articles on the topic "Thin film silicon layers"

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Guo, Hang, Jun Ying Jiang, Jia Xing Liu, Zhi Hua Nie, Fang Ye, and Chong Fang Ma. "Fabrication and Calibration of Cu-Ni Thin Film Thermocouples." Advanced Materials Research 512-515 (May 2012): 2068–71. http://dx.doi.org/10.4028/www.scientific.net/amr.512-515.2068.

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Thin film thermocouples (TFTCs) have vast vistas owing to their advantages, such as thin junction, small volume, fast response rate, high sensitivity and so on. In this investigation, a transient temperature sensor of TFTCs was fabricated to measure the surface transient temperature by vacuum coating technology. Silicon dioxide was selected as insulating substrate, the overall dimension of which was 8 mm long, 8 mm wide, and 0.1 mm thick. Two different metal layers were sandwiched between silicon dioxide 2 insulating substrate and silicon dioxide protective layer: cuprum and nickel films, which were 0.08 μm thick. TFTCs consist of 13 Cu-Ni junctions, which are connected in series. The whole TFTCs area is 4.6mm × 4.6 mm. The aggregate thickness of the transient temperature sensor is 0.17 μm. To protect Cu and Ni films, a silicon dioxide layer thickness of 0.01 μm was evaporated on metal layers excluding terminal points. This research carried out static and dynamic calibration to TFTCs. The Seebeck coefficient of the thin film thermocouple is 0.83843 μV/°C. The dynamic performance of TFTCs exhibited dynamic behavior corresponding to the heat flux change on the surface of thin film thermocouple.
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Zeman, Miroslav. "Thin-Film Silicon PV Technology." Journal of Electrical Engineering 61, no. 5 (September 1, 2010): 271–76. http://dx.doi.org/10.2478/v10187-010-0039-y.

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Thin-Film Silicon PV TechnologyThin-film silicon solar cell technology is one of the promising photovoltaic technologies for delivering low-cost solar electricity. Today the thin-film silicon PV market (402MWpproduced in 2008) is dominated by amorphous silicon based modules; however it is expected that the tandem amorphous/microcrystalline silicon modules will take over in near future. Solar cell structures based on thin-film silicon for obtaining high efficiency are presented. In order to increase the absorption in thin absorber layers novel approaches for photon management are developed. Module production and application areas are described.
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Torres, Arturo, Mario Moreno, Pedro Rosales, Miguel Dominguez, Alfonso Torres, Alfredo Morales, Adrian Itzmoyotl, and Javier de la Hidalga. "Study of nanocrystalline silicon-germanium for the development of thin film transistors." European Physical Journal Applied Physics 89, no. 1 (January 2020): 10102. http://dx.doi.org/10.1051/epjap/2020190264.

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In this work, we study the effect of the deposition RF-power on the structural, optical and electrical properties of hydrogenated nanocrystalline silicon-germanium (nc-SiGe:H) thin films obtained by plasma enhanced chemical vapor deposition (PECVD) at substrate temperature of 200 °C. The objective is to produce films with high crystalline fraction in order to be used as active layers in thin film transistors (TFTs). Bottom-gate (BG) thin film transistors were fabricated with nc-SiGe:H active layers, deposited at different RF-power. Values of ON-OFF current ratio, subthreshold slope and threshold voltage of 105, 0.12 V/dec and 0.9 V, respectively, were obtained on TFTs with the nc-SiGe:H active layer deposited at 25 W.
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Balasundraprabhu, Rangasamy, E. V. Monakhov, N. Muthukumarasamy, and B. G. Svensson. "Studies on Nanostructure ITO Thin Films on Silicon Solar Cells." Advanced Materials Research 678 (March 2013): 365–68. http://dx.doi.org/10.4028/www.scientific.net/amr.678.365.

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Nanostructure ITO thin films have been deposited on well cleaned glass and silicon substrates using dc magnetron sputtering technique. The ITO films are post annealed in air using a normal heater setup in the temperature range 100 - 400 °C. The ITO film annealed at 300°C exhibited optimum transparency and resistivity values for device applications. The thickness of the ITO thin films is determined using DEKTAK stylus profilometer. The sheet resistance and resistivity of the ITO films were determined using four probe technique. Finally, the optimized nanostructure ITO layers are incorporated on silicon solar cells and the efficiency of the solar cell are found to be in the range 12-14%. Other solar cell parameters such as fill factor(FF), open circuit voltage(Voc),Short circuit current(Isc), series resistance(Rs) and shunt resistance(Rsh) have been determined. The effect of ITO film thickness on silicon solar cells is also observed.
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Khosravi, Payam, Seyyed Ali Seyyed Seyyed Ebrahimi, Zahra Lalegani, and Bejan Hamawandi. "Anisotropic Magnetoresistance Evaluation of Electrodeposited Ni80Fe20 Thin Film on Silicon." Micromachines 13, no. 11 (October 22, 2022): 1804. http://dx.doi.org/10.3390/mi13111804.

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In this study, a simple growth of permalloy NiFe (Py) thin films on a semiconductive Si substrate using the electrochemical deposition method is presented. The electrodeposition was performed by applying a direct current of 2 mA/cm2 during different times of 120 and 150 s and thin films with different thicknesses of 56 and 70 nm were obtained, respectively. The effect of Py thickness on the magnetic properties of thin films was investigated. Field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM), ferromagnetic resonance (FMR), anisotropic magnetoresistance (AMR), and magneto-optic Kerr effect (MOKE) analyses were performed to characterize the Py thin films. It was observed that the coercivity of the Py thin film increases by increasing the thickness of the layer. Microscopic images of the layers indicated granular growth of the Py thin films with different roughness values leading to different magnetic properties. The magnetic resonance of the Py thin films was measured to fully describe the magnetic properties of the layers. The magnetoresistance ratios of deposited Py thin films at times of 120 and 150 s were obtained as 0.226% and 0.235%, respectively. Additionally, the damping constant for the deposited sample for 120 s was estimated as 1.36 × 10−2, which is comparable to expensive sputtered layers’ characteristics.
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Beaucarne, Guy. "Silicon Thin-Film Solar Cells." Advances in OptoElectronics 2007 (December 17, 2007): 1–12. http://dx.doi.org/10.1155/2007/36970.

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We review the field of thin-film silicon solar cells with an active layer thickness of a few micrometers. These technologies can potentially lead to low cost through lower material costs than conventional modules, but do not suffer from some critical drawbacks of other thin-film technologies, such as limited supply of basic materials or toxicity of the components. Amorphous Si technology is the oldest and best established thin-film silicon technology. Amorphous silicon is deposited at low temperature with plasma-enhanced chemical vapor deposition (PECVD). In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si (also called nanocrystalline Si) is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices. The combination of an amorphous silicon top cell and a microcrystalline bottom cell has yielded promising results, but much work is needed to implement it on large-area and to limit light-induced degradation. Finally thin-film polysilicon solar cells, with grain size in the micrometer range, has recently emerged as an alternative photovoltaic technology. The layers have a grain size ranging from 1 μm to several tens of microns, and are formed at a temperature ranging from 600 to more than 1000∘C. Solid Phase Crystallization has yielded the best results so far but there has recently been fast progress with seed layer approaches, particularly those using the aluminum-induced crystallization technique.
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De Avillez, R. R., L. A. Clevenger, C. V. Thompson, and K. N. Tu. "Quantitative investigation of titanium/amorphous-silicon multilayer thin film reactions." Journal of Materials Research 5, no. 3 (March 1990): 593–600. http://dx.doi.org/10.1557/jmr.1990.0593.

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Growth of amorphous-titanium-silicidc and crystalline C49 TiSi2 in titanium/amorphous-silicon multilayer films was investigated using a combination of differential scanning calorimetry (DSC), thin film x-ray diffraction, Auger depth profiling, and cross-sectional transmission electron microscopy. The multilayer films had an atomic concentration ratio of 1Ti to 2Si and a modulation period of 30 nm. In the as-deposited condition, a thin amorphous-titanium-silicide layer was found to exist between the titanium and silicon layers. Heating the multilayer film from room temperature to 700 K caused the release of an exothermic heat over a broad temperature range and an endothermic heat over a narrow range. The exothermic hump was attributed to thickening of the amorphous-titanium silicide layer, and the endothermic step was attributed to the homogenization and/or densification of the amorphous-silicon and amorphous-titanium-silicide layers. An interpretation of previously reported data for growth of amorphous-titanium-silicide indicates an activation energy of 1.0 ± 0.1 eV and a pre-exponential coefficient of 1.9 × 10−7 cm2/s. Annealing at high temperatures caused formation of C49 TiSi2 at the amorphous-titanium-silicide/amorphous-silicon interfaces with an activation energy of 3.1 ± 0.1 eV. This activation energy was attributed to both the nucleation and the early stages of growth of C49 TiSi2. The heat of formation of C49 TiSi2 from a reaction of amorphous-titanium-silicide and crystalline titanium was found to be –25.8 ± 8.8 kJ/mol and the heat of formation of amorphous-titanium-silicide was estimated to be –130.6 kJ/mol.
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Dore, Jonathon, Rhett Evans, Bonne D. Eggleston, Sergey Varlamov, and Martin A. Green. "Intermediate Layers for Thin-Film Polycrystalline Silicon Solar Cells on Glass Formed by Diode Laser Crystallization." MRS Proceedings 1426 (2012): 63–68. http://dx.doi.org/10.1557/opl.2012.866.

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ABSTRACTIntermediate layers between silicon and borosilicate glass are investigated for compatibility with a diode laser crystallization technique for fabrication of thin-film polycrystalline silicon solar cells. SiCx, SiNx and SiOx layers or multilayer stacks of these materials have allowed silicon films of 10μm thickness to be successfully crystallized by diode laser irradiation without dewetting, with each option offering different advantages. SiCx allows the most robust crystallization process, while SiOx is the best barrier to contamination and the most stable layer. SiNx offers the best anti-reflection coating for superstrate configured solar cells. Presently, best device performance is achieved with a SiOxintermediate layer with cells achieving up to ∼540 mV open-circuit voltage.
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Ait-Hamouda, Kahina, A. Ababou, and N. Gabouze. "Optimization of DLC/PS Antireflection Coating Properties for Multicrystalline Silicon Solar Cells." Materials Science Forum 609 (January 2009): 179–82. http://dx.doi.org/10.4028/www.scientific.net/msf.609.179.

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In this work, we report on the results of using a Diamond-Like Carbon / Porous Silicon (DLC/PS) double layer as antireflection coating to enhance the performance of multicrystalline silicon photovoltaic cells. DLC layers were obtained by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The properties of these layers were investigated in order to establish the optimum preparation conditions for solar cell applications. Then, thin films of combined porous silicon-DLC structure were fabricated for antireflection coating use. The spectral response of a solar cell based on multicrystalline silicon (mc-Si) coated with a PS layer, formed by electrochemical process was enhanced compared to a cell without porous silicon layer as emitter. Further improvements are obtained by a deposition of a thin DLC film. The results of the solar cell parameters before and after porous silicon formation and DLC coating are discussed.
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Wang, Chao-Chun, Dong-Sing Wuu, Shui-Yang Lien, Yang-Shih Lin, Chueh-Yang Liu, Chia-Hsum Hsu, and Chia-Fu Chen. "Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer." International Journal of Photoenergy 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/890284.

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The nanocrystalline silicon-germanium (nc-SiGe) thin films were deposited by high-frequency (27.12 MHz) plasma-enhanced chemical vapor deposition (HF-PECVD). The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.
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Dissertations / Theses on the topic "Thin film silicon layers"

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McCann, Michelle Jane, and michelle mccann@uni-konstanz de. "Aspects of Silicon Solar Cells: Thin-Film Cells and LPCVD Silicon Nitride." The Australian National University. Faculty of Engineering and Information Technology, 2002. http://thesis.anu.edu.au./public/adt-ANU20040903.100315.

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This thesis discusses the growth of thin-film silicon layers suitable for solar cells using liquid phase epitaxy and the behaviour of oxide LPCVD silicon nitride stacks on silicon in a high temperature ambient.¶ The work on thin film cells is focussed on the characteristics of layers grown using liquid phase epitaxy. The morphology resulting from different seeding patterns, the transfer of dislocations to the epitaxial layer and the lifetime of layers grown using oxide compared with carbonised photoresist barrier layers are discussed. The second half of this work discusses boron doping of epitaxial layers. Simultaneous layer growth and boron doping is demonstrated, and shown to produce a 35um thick layer with a back surface field approximately 3.5um thick.¶ If an oxide/nitride stack is formed in the early stages of cell processing, then characteristics of the nitride may enable increased processing flexibility and hence the realisation of novel cell structures. An oxide/nitride stack on silicon also behaves as a good anti- reflection coating. The effects of a nitride deposited using low pressure chemical vapour deposition on the underlying wafer are discussed. With a thin oxide layer between the silicon and the silicon nitride, deposition is shown not to significantly alter effective life-times.¶ Heating an oxide/nitride stack on silicon is shown to result in a large drop in effective Lifetimes. As long as at least a thin oxide is present, it is shown that a high temperature nitrogen anneal results in a reduction in surface passivation, but does not significantly affect bulk lifetime. The reduction in surface passivation is shown to be due to a loss of hydrogen from the silicon/silicon oxide interface and is characterised by an increase in Joe. Higher temperatures, thinner oxides, thinner nitrides and longer anneal times are all shown to result in high Joe values. A hydrogen loss model is introduced to explain the observations.¶ Various methods of hydrogen re-introduction and hence Joe recovery are then discussed with an emphasis on high temperature forming gas anneals. The time necessary for successful Joe recovery is shown to be primarily dependent on the nitride thickness and on the temperature of the nitrogen anneal. With a high temperature forming gas anneal, Joe recovery after nitrogen anneals at both 900 and 1000oC and with an optimised anti-reflection coating is demonstrated for chemically polished wafers.¶ Finally the effects of oxide/nitride stacks and high temperature anneals in both nitrogen and forming gas are discussed for a variety of wafers. The optimal emitter sheet resistance is shown to be independent of nitrogen anneal temperature. With textured wafers, recovery of Joe values after a high temperature nitrogen anneal is demonstrated for wafers with a thick oxide, but not for wafers with a thin oxide. This is shown to be due to a lack of surface passivation at the silicon/oxide interface.
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Zhang, Wendi [Verfasser]. "Ion beam treatment of functional layers in thin-film silicon solar cells / Wendi Zhang." Aachen : Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen, 2013. http://d-nb.info/1038570891/34.

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Schillinger, Kai [Verfasser], and Harald [Akademischer Betreuer] Hillebrecht. "Crystalline silicon carbide intermediate layers for silicon thin-film solar cells = Kristalline Siliciumkarbid Zwischenschichten für Silicium Dünnschicht Solarzellen." Freiburg : Universität, 2014. http://d-nb.info/1123480354/34.

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Fu, Engang. "Study of epitaxial thin films of YBa2Cu3O7-[delta] on silicon with different buffer layers." Click to view the E-thesis via HKUTO, 2005. http://sunzi.lib.hku.hk/hkuto/record/B3637488X.

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Fu, Engang, and 付恩剛. "Study of epitaxial thin films of YBa2Cu3O7-[delta] on silicon with different buffer layers." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2005. http://hub.hku.hk/bib/B3637488X.

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Paus, K. "The electron microscopy of silicon of sapphire materials." Thesis, University of Oxford, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.382598.

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Rodriguez, Jose Virgilio Anguita. "Thin film coatings for new generation infrared thermal picture synthesising devices." Thesis, University of Surrey, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.341383.

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Zhang, Chao [Verfasser], Uwe [Akademischer Betreuer] Rau, and Miroslav [Akademischer Betreuer] Zeman. "Interface and Topography Optimization for Thin-Film Silicon Solar Cells with Doped Microcrystalline Silicon Oxide Layers / Chao Zhang ; Uwe Rau, Miroslav Zeman." Aachen : Universitätsbibliothek der RWTH Aachen, 2017. http://nbn-resolving.de/urn:nbn:de:101:1-2018071608023066276027.

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Zhang, Chao Verfasser], Uwe [Akademischer Betreuer] [Rau, and Miroslav [Akademischer Betreuer] Zeman. "Interface and Topography Optimization for Thin-Film Silicon Solar Cells with Doped Microcrystalline Silicon Oxide Layers / Chao Zhang ; Uwe Rau, Miroslav Zeman." Aachen : Universitätsbibliothek der RWTH Aachen, 2017. http://d-nb.info/1162845945/34.

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Mogilatenko, Anna. "Electron Microscopy Characterization of Manganese Silicide Layers on Silicon." Doctoral thesis, Universitätsbibliothek Chemnitz, 2003. http://nbn-resolving.de/urn:nbn:de:swb:ch1-200300523.

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The present thesis reports on the transmission electron microscopy structure characterization of semiconducting thin films of higher manganese silicides (HMS or MnSi1.7) grown on (001)Si by different UHV deposition methods (the template method, reactive deposition and surfactant mediated reactive deposition). In this work electron diffraction technique was applied for the fist time to reveal the HMS phase growing in thin MnSi1.7 films. The obtained results suggest the presence of the shortest in c-axis length HMS phase, namely Mn4Si7, within our experiments. It has been shown that growth of epitaxial Mn4Si7 grains can be achieved by the template technique. In particular, the influence of the template thickness on the silicide layer quality has been investigated. It has been found that deposition of a thin Mn layer of 0.8 nm nominal thickness at room temperature prior to the Mn/Si codeposition at 550°C causes the formation of a silicide template that leads to the preferred epitaxial Mn4Si7 growth with (110)[4-41]Mn4Si7 || (001)[110]Si. Silicide crystallites of two additional orientation relations, (3-38)[-443]Mn4Si7 || (001)[110]Si and (001)[110] Mn4Si7 || (001)[110]Si, were present at the same template thickness to a lesser extent. Due to the crystal symmetry of Mn4Si7 and Si the epitaxial Mn4Si7 growth on (001)Si leads to the formation of a number of Mn4Si7 domains for each observed orientation. Additional experiments were carried out using the reactive deposition process. It has been shown that the deposition of Mn onto (001)Si at substrate temperatures higher then 600°C leads to the formation of large silicide islands growing with the major part of their elongated grains parallel to <110>Si. XRD investigations show the observed silicide grains to exhibit the following texture: (110)Mn4Si7 || (001)Si. The found island morphology of Mn4Si7 films can be modified by the deposition of about one monolayer of Sb (surfactant) onto (001)Si prior to the Mn-deposition. This process results in an increase of the silicide island density by about two orders of magnitude and decrease of the silicide grain dimensions to nanometer range. Furthermore, in the presence of Sb the silicide layers grow with the preferential orientation: (100)[010]Mn4Si7 || (001)[100]Si. The observed changes in the morphology and orientation of the Mn4Si7 layers can be explained by the reduced diffusion of Mn and Si atoms in the presence of the Sb overlayer
In der vorliegenden Arbeit wird die Struktur von dünnen MnSi1.7-Schichten, die mit verschiedenen UHV-Herstellungsmethoden (template-Verfahren, reaktive Abscheidung und surfactant gesteuerte Abscheidung) auf (001)Si hergestellt wurden, mittels Elektronenmikroskopie charakterisiert. Die Ergebnisse der Elektronenbeugung an dünnen Mangansilicid-Schichten können vollständig interpretiert werden, wenn von den bekannten höheren Mangansiliciden (HMS) das Mn4Si7 als einzige vorliegende Phase angenommen wird. Der Hauptteil der Arbeit beschäftigt sich mit den mittels template-Verfahren abgeschiedenen Mn4Si7-Schichten. In diesen Experimenten wurde der Einfluss der template-Dicke auf die Morphologie und Orientierung der hergestellten Schichten untersucht. Es wird gezeigt, dass bei der Abscheidung von einer dünnen Mn-Schicht mit einer nominalen Dicke von 0,8 nm bei Raumtemperatur und weiterer Mn/Si-Koabscheidung bei einer Substrattemperatur von 550°C nahezu geschlossene Silicidschichten mit der bevorzugten Orientierungsbeziehung (110)[4-41]Mn4Si7 || (001)[110]Si entstehen. Weiterhin wachsen bei dieser template-Dicke Mn4Si7-Kristallite mit den Orientierungsbeziehungen: (3-38)[-443]Mn4Si7 || (001)[110]Si und (001)[110] Mn4Si7 || (001)[110]Si. Bei jeder gefundenen Orientierungsbeziehung treten beim Wachstum von Mn4Si7 auf (001)Si mehrere Domäne auf. Zusätzliche Experimente wurden unter Verwendung der reaktiven Schichtabscheidung durchgeführt. Sie verdeutlichen, dass bei reaktiver Abscheidung von Mn auf (001)Si ab einer Substrattemperatur von 600°C ein Wachstum von Mn4Si7-Inseln entlang den [110]-Richtungen des Siliciums erfolgt. XRD-Untersuchungen zeigen, dass diese Inseln die folgende Textur haben: (110)Mn4Si7 || (001)Si. Durch eine Modifizierung der Si-Oberfläche mit einer bis zu einer Monolage dicken Sb-Schicht (surfactant) kann das Mn4Si7-Inselwachstum beeinflusst werden. Die dabei gefundene Erhöhung der Mn4Si7-Inseldichte wird hier auf die reduzierte Mn- und Si-Diffusion zurükgeführt. Weiterhin wurde gefunden, dass dieser Abscheidungsprozess Mn4Si7-Kristallite der bevorzugten Orientierung (100)[010]Mn4Si7 || (001)[110]Si liefert
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Books on the topic "Thin film silicon layers"

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Temple, Matthew Paul. Erbium-doped silicon thin film devices. Birmingham: University of Birmingham, 2001.

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Schuster, Christian Stefano. Diffractive Optics for Thin-Film Silicon Solar Cells. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-44278-5.

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(Society), SPIE, ed. Thin film solar technology III. Bellingham: SPIE, 2011.

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Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics (9th 2007 Chicago, Ill.). Silicon nitride, silicon dioxide, and emerging dielectrics 9. Edited by Sah R. E, Electrochemical Society. Dielectric Science and Technology Division., and Electrochemical Society Meeting. Pennington, N.J: Electrochemical Society, 2007.

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Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics (9th 2007 Chicago, Ill.). Silicon nitride, silicon dioxide, and emerging dielectrics 9. Edited by Sah R. E, Electrochemical Society. Dielectric Science and Technology Division., and Electrochemical Society Meeting. Pennington, N.J: Electrochemical Society, 2007.

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Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films (7th 2003 Paris, France). Silicon nitride and silicon dioxide thin insulating films VII: Proceedings of the international symposium. Edited by Sah R. E, Electrochemical Society. Dielectric Science and Technology Division., Electrochemical Society Electronics Division, and Electrochemical Society Meeting. Pennington, NJ: Electrochemical Society, 2003.

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Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films (5th 1999 Seattle, Wash.). Silicon nitride and silicon dioxide thin insulating films: Proceedings of the fifth international symposium. Pennington, NJ (10 S. Main St., Pennington 08534-2696: Electrochemical Society), 1999.

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Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films (1988 Chicago, Ill.). Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films. Pennington, NJ: Electrochemical Society, 1989.

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Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films (2nd 1986 San Diego, Calif.). Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films. Pennington, NJ (10 S. Main St., Pennington 08534-2696: Electrochemical Society), 1987.

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Belzer, Barbara J. The results of an interlaboratory study of ellipsometric measurements of thin film silicon dioxide on silicon. Gaithersburg, MD: U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1997.

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Book chapters on the topic "Thin film silicon layers"

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Fork, D. K., G. A. N. Connell, D. B. Fenner, J. B. Boyce, Julia M. Phillips, and T. H. Geballe. "YBCO Films and YSZ Buffer Layers Grown in Situ on Silicon by Pulsed Laser Deposition." In Science and Technology of Thin Film Superconductors 2, 187–96. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-1345-8_28.

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Schwanitz, Konrad, and Stefan Klein. "Anti-reflective Silicon Oxide p-Layer for Thin-Film Silicon Solar Cells." In High-Efficiency Solar Cells, 475–96. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-01988-8_15.

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Qu, C., P. Li, J. Fan, D. Edwards, W. Schulze, G. Wynick, R. E. Miller, et al. "Aluminum Oxide and Silicon Nitride Thin Films as Anti-Corrosion Layers." In Advanced Ceramic Coatings and Interfaces V, 123–34. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2010. http://dx.doi.org/10.1002/9780470943960.ch10.

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McNeill, D. W., F. H. Ruddell, S. J. N. Mitchell, B. M. Armstrong, and H. S. Gamble. "Limited Reaction Processing of Silicon Layers for Thin Film Transistors and Polysilicon Emitter Bipolar Transistors." In Springer Proceedings in Physics, 306–11. Berlin, Heidelberg: Springer Berlin Heidelberg, 1991. http://dx.doi.org/10.1007/978-3-642-76385-4_43.

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Kondo, Masao, and Kazuaki Kurihara. "Orientation Control of Perovskite Epitaxial Thin Film on Silicon Substrate with Yttria-Stabilized Zirconia Buffer Layers." In Electroceramics in Japan IX, 69–72. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-411-1.69.

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Lys, R., B. Pavlyk, D. Slobodzyan, J. Cebulski, and M. Kushlyk. "The Role of a Thin Aluminum Film in the Reconstruction of Silicon’s Near-Surface Layers." In Lecture Notes in Mechanical Engineering, 189–96. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-6133-3_19.

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Hadj Kouider, Wafa, Abbas Belfar, Mohammed Belmekki, and Hocine Ait-Kaci. "N Type Microcrystalline Silicon Oxide Layer Effect in P-I-N Ultra-Thin Film Solar Cell." In ICREEC 2019, 343–48. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5444-5_43.

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Campedelli, Roberto, Luca Lamagna, Silvia Nicoli, and Andrea Nomellini. "Thin Film Deposition." In Silicon Sensors and Actuators, 75–103. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-80135-9_3.

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Liu, Fengzhen, and Yurong Zhou. "Polycrystalline Silicon Thin Film." In Handbook of Photovoltaic Silicon, 1–34. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-52735-1_29-1.

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Liu, Fengzhen, and Yurong Zhou. "Polycrystalline Silicon Thin Film." In Handbook of Photovoltaic Silicon, 757–90. Berlin, Heidelberg: Springer Berlin Heidelberg, 2019. http://dx.doi.org/10.1007/978-3-662-56472-1_29.

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Conference papers on the topic "Thin film silicon layers"

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Kirby, P. B. "Thin film piezoelectric layers for sensing and actuation in microstructures." In IEE Colloquium on Silicon Fabricated Inertial Instruments. IEE, 1996. http://dx.doi.org/10.1049/ic:19961220.

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Park, Jong-Jin, and Minoru Taya. "Design of Micro-Arrayed Thin Film Thermocouples (TFTC)." In ASME 2003 International Electronic Packaging Technical Conference and Exhibition. ASMEDC, 2003. http://dx.doi.org/10.1115/ipack2003-35040.

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We designed the thin film thermocouples (TFTC) made by T-type (Copper-Constantan) thermocouple arrays in order to measure temperature distribution at higher spatial resolutions. This sensor consists of a few different layers; silicon wafer, thin aluminum nitride (AlN) layer, and thin film thermocouple layers. The thickness of the thin aluminum nitride (AlN) layer is 100nm and the layer is located between silicon wafer and thin film thermocouples to construct an electrical insulator and thermal conductor. T-type (Copper-Constantan) thermocouples are deposited on the aluminum nitride (AlN) layer over the silicon wafer and the copper thickness and constantan thickness are 50nm, repectively. The sensor area is 10mm × 10mm, and has 10 × 10 junction arrays, and each junction has 100μm × 100μm surface area. According to the measured data, electrical resistivitives of thin films are almost 5 times greater than those of bulk materials. This is based on the comparison of thermal simulation and measured data of 1-D heat conduction in steady state. Seebeck coefficients between copper bulk material and constantan thin film are calculated and the weight factor is defined due to Seebeck coefficient mismatches of bulk materials and thin films. Thermal simulation of 2-dimensional heat conduction in steady state calculated by finite element analysis and compared with the measured data, resulting in a good agreement between simulations and measured data.
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Buehlmann, Peter, Julien Bailat, Andrea Feltrin, and Christophe Ballif. "Conducting Two-phase Silicon Oxide Layers for Thin-film Silicon Solar Cells." In 2008 MRS Fall Meetin. Materials Research Society, 2008. http://dx.doi.org/10.1557/proc-1123-p03-09.

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Wei, Guang-Pu, Jingwei Feng, Yiming Zheng, and Yu Li. "Structure and characteristic of porous silicon layer." In Thin Film Physics and Applications: Second International Conference, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1994. http://dx.doi.org/10.1117/12.190741.

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Haug, Franz-Josef, Mathieu Boccard, Remi Biron, Bjorn Niesen, Matthieu Despeisse, and Christophe Ballif. "Advanced intermediate reflector layers for thin film silicon tandem solar cells." In 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6744292.

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Ernst, Marco, and Rolf Brendel. "Large area macroporous silicon layers for monocrystalline thin-film solar cells." In 2010 35th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2010. http://dx.doi.org/10.1109/pvsc.2010.5614496.

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Lindekugel, S., M. Künle, S. Janz, and S. Reber. "Highly reflective intermediate layers in crystalline silicon thin film solar cell." In SPIE Photonics Europe, edited by Ralf B. Wehrspohn and Andreas Gombert. SPIE, 2010. http://dx.doi.org/10.1117/12.854675.

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Imbert, B., A. Reinhardt, T. Ricart, C. Billard, E. Defay, H. Virieux, T. Jouanneau, et al. "Thin film quartz layer reported on silicon." In 2011 Joint Conference of the IEEE International Frequency Control and the European Frequency and Time Forum (FCS). IEEE, 2011. http://dx.doi.org/10.1109/fcs.2011.5977829.

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Schade, Christoph, Alex Phan, Kevin Joslin, Phuong Truong, and Frank Talke. "Dissolution Behavior of Silicon Nitride Thin Films in a Simulated Ocular Environment." In ASME 2020 29th Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/isps2020-1946.

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Abstract The time dependent dissolution of silicon nitride is studied in a simulated eye environment (controlled saline solution) as a function of temperature and pressure. Silicon nitride films manufactured by plasma-enhanced chemical vapor deposition (PECVD) and low-pressure chemical vapor deposition (LPCVD), respectively, were tested. The results revealed that both film types showed evidence of dissolution i.e., the films dissolved in the saline solution over time. At 37°C, PECVD and LPCVD silicon nitride membranes dissolved at a rate of 1.3 nm/day and 0.3 nm/day, respectively. It was found that at 23°C, the dissolution rate of the PECVD samples reduced to just 0.2 nm/day. Dissolution was not observed in samples tested in deionized water at 37°C. Titanium oxide layers (TiO2) were tested as protective layers to stop the dissolution. The results are important for implantable MEMS devices where silicon nitride is used as a functional membrane or as a protective layer.
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Hebling, C., R. Gaffke, P. Lanyi, H. Lautenschlager, C. Schetter, B. Wagner, and F. Lutz. "Recrystallized silicon on SiO/sub 2/-layers for thin film solar cells." In Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996. IEEE, 1996. http://dx.doi.org/10.1109/pvsc.1996.564212.

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Reports on the topic "Thin film silicon layers"

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Martin U. Pralle and James E. Carey. Black Silicon Enhanced Thin Film Silicon Photovoltaic Devices. Office of Scientific and Technical Information (OSTI), July 2010. http://dx.doi.org/10.2172/984305.

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Irene, Eugene A. Silicon Oxidation Studies on Thin Film Silicon Oxidation Formation. Fort Belvoir, VA: Defense Technical Information Center, March 1989. http://dx.doi.org/10.21236/ada206835.

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Gordon, R. G., R. Broomhall-Dillard, X. Liu, D. Pang, and J. Barton. Transparent Conductors and Barrier Layers for Thin Film Solar Cells:. Office of Scientific and Technical Information (OSTI), December 2001. http://dx.doi.org/10.2172/15000095.

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Benziger, Jay B. Surface Intermediates in Thin Film Deposition on Silicon. Fort Belvoir, VA: Defense Technical Information Center, August 1989. http://dx.doi.org/10.21236/ada216662.

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Morel, J. R. Charged particle detectors made from thin layers of amorphous silicon. Office of Scientific and Technical Information (OSTI), May 1986. http://dx.doi.org/10.2172/5339614.

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Ekerdt, John G. Silicon and Germanium Thin Film Chemical Vapor Deposition, Modeling and Control. Fort Belvoir, VA: Defense Technical Information Center, April 2002. http://dx.doi.org/10.21236/ada417307.

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Sachs, Emanuel, and Tonio Buonassisi. Thin, High Lifetime Silicon Wafers with No Sawing; Re-crystallization in a Thin Film Capsule. Office of Scientific and Technical Information (OSTI), January 2013. http://dx.doi.org/10.2172/1060193.

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Weber, M. Improvement of small-area, amorphous-silicon thin-film photovoltaics on polymer substrate. Office of Scientific and Technical Information (OSTI), February 1990. http://dx.doi.org/10.2172/7202806.

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Carlson, D., R. Ayra, M. Bennett, J. Brewer, A. Catalano, R. D'Aiello, C. Dickson, et al. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells. Office of Scientific and Technical Information (OSTI), September 1989. http://dx.doi.org/10.2172/5434340.

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Catalano, A., D. Carlson, R. Ayra, M. Bennett, R. D'Aiello, C. Dickson, C. Fortmann, et al. Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells. Office of Scientific and Technical Information (OSTI), October 1989. http://dx.doi.org/10.2172/5496057.

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