Journal articles: 'Thin film layer analysis'

1

Huang, T. C., and W. Parrish. "X-Ray Fluorescence Analysis of Multi-Layer Thin Films." Advances in X-ray Analysis 29 (1985): 395–402. http://dx.doi.org/10.1154/s0376030800010508.

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AbstractThe characterization of multi-layer thin films by X-ray fluorescence using the fundamental parameter method and the LAMA-III program is described. Analyses of a double-layer FeMn/NiFe and two triple-layer NiFe/Cu/Cr and Cr/Cu/NiFe specimens show that the complex inter-layer absorption and secondary fluorescence effects were properly corrected. The compositions and thicknesses of all layers agreed to ±2% with corresponding single-layer films, a precisian comparable with bulk and single-layer thin film analyses.

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Lamovec, J., V. Jovic, M. Vorkapic, B. Popovic, V. Radojevic, and R. Aleksic. "Microhardness analysis of thin metallic multilayer composite films on copper substrates." Journal of Mining and Metallurgy, Section B: Metallurgy 47, no. 1 (2011): 53–61. http://dx.doi.org/10.2298/jmmb1101053l.

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Composite systems of alternately electrodeposited nanocrystalline Ni and Cu films on cold-rolled polycrystalline copper substrates were fabricated. Highly-densified parallel interfaces which can give rise to high strength of composites are obtained by depositing layers at a very narrow spacing. The hardness properties of the composite systems were characterized using Vickers microhardness testing with loads ranging from 1.96 N down to 0.049 N. Above a certain critical penetration depth, a measured hardness value is not the hardness of the electrodeposited film, but the so-called ?composite hardness?, because the substrate also participates in the plastic deformations during the indentation process. Dependence of microhardness on layer thickness, Ni/Cu layer thickness ratio and total thickness of the film was investigated. Model of Korsunsky was applied to the experimental data in order to determine the composite film hardness. The microhardness increased with decreasing the layer thickness down to 30 nm and it is consistent with the Hall-Petch relation. Layer thickness and layer thickness ratio are the important parameters which are responsible for making decision of the total film thickness.

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Kaufmann, M., M. Mantler, and F. Weber. "Analysis of Multi-Layer Thin Films by XRF." Advances in X-ray Analysis 37 (1993): 205–12. http://dx.doi.org/10.1154/s0376030800015706.

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AbstractThe characterization of multi-layer thin film properties, such as thicknesses of layers or concentrations of elements, using the fundamental parameter method is discussed. Experimental results are shown for repetitive multi-layers of up to 80 layers. Furthermore the impact of using different characteristic lines on the information depth and the resolving power is discussed for single layers and repetitive multi-layers. Finally, thin films containing light elements are presented; in this case the conventional fundamental parameter theory fails to provide accurate results, perhaps due to the neglect of the impact of the secondary excitation by photoelectrons.

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Sasi, Krishnaprasad, Sebastian Mailadil, Fredy Rojas, Aldrin Antony, and Jayaraj Madambi. "Buffer Assisted Epitaxial Growth of Bi1.5Zn1Nb1.5O7 Thin Films by Pulsed Laser Deposition for Optoelectronic Applications." MRS Proceedings 1454 (2012): 183–88. http://dx.doi.org/10.1557/opl.2012.1264.

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ABSTRACTBi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were prepared on Al2O3with a double ZnO buffer layer by pulsed laser deposition. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The sharp intense spots in the SAED pattern also indicates the highly crystalline nature of BZN thin film. The electrical properties of the as deposited thin films were investigated by patterning an inter digital capacitor (IDC) structure on BZN. A high tunability was observed in this epitaxially grown thin films.

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Kim, Ig-Hyeon, Changmo Sung, and Sang-Ro Lee. "TEM Observation of Delamination Behavior of c-BN Thin Film." Microscopy and Microanalysis 3, S2 (August 1997): 483–84. http://dx.doi.org/10.1017/s1431927600009302.

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Cubic boron nitride films were prepared by helicon wave plasma CVD process on (100) Si. The film deposited under the intense impact of energetic ions is usually delaminated from the substrate after deposition. The delamination behavior of c-BN film was investigated with transmission electron microscopy. It is found that moisture in the air, surface roughness of the film and substrate, as well as severe compressive stresses in the film are the primary contributors to film delamination. An aqueous oxidation was verified by EDXS analysis, which generate local stress by volume expansion at the crack region in the c-BN layer.The cross-sectional TEM micrograph of c-BN film in Fig. 1 shows that a very thin layer of h-BN is deposited before the c-BN layer starts to grow at an early stage of film growth. A columnar structured thin h-BN layer about 20 nm thickness at the interface is clearly separated from the c-BN layer in an aspect of microstructure.

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Kong, G., M. O. Jones, J. S. Abell, P. P. Edwards, S. T. Lees, K. E. Gibbons, I. Gameson, and M. Aindow. "Microstructure of laser-ablated superconducting La2CuO4Fx thin films on SrTiO3." Journal of Materials Research 16, no. 11 (November 2001): 3309–16. http://dx.doi.org/10.1557/jmr.2001.0455.

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Thin films of lanthanum cuprate were grown on SrTiO3 substrates by pulsed laser deposition and made superconducting (Tc ∼ 38 K) through the process of post-deposition fluorination using elemental fluorine. A microstructural analysis showed that the [110] zone of the film grows parallel to the [100] zone of the SrTiO3 substrate, reducing the lattice mismatch from 37.5% to 2.4%. At the film–substrate interface there is an intermediate layer 3–4 nm thick and twin-related grains emanate from this region. Stacking faults are present in the bulk of the film, with misoriented subgrains present at the deposit surface.

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Lee, Sang Hyuk, Bo Hyun Seo, and Jong Hyun Seo. "Micro-Scratch Analysis on Adhesion between Thin Films and PES Substrate." Advanced Materials Research 26-28 (October 2007): 1153–56. http://dx.doi.org/10.4028/www.scientific.net/amr.26-28.1153.

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In flexible display, reliability of the thin film/polymer interface is an important issue because adhesion strength dissimilar materials is often inherently poor, and residual stresses arising from thermal mismatches or pressure exerted by vaporized moisture often lead to delaminations of interfaces. In the present study we deposited various thin films such as silicon nitride (SiNx), aluminum metal layer, and indium tin oxide on polyether sulphone (PES) substrate. The film adhesion was determined by micro-scratch test. The adhesion strength, presented by the critical load, Lc, when the film starts to delaminate, was determined as a function of plasma pretreated on PES substrate.

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Mutlu, Zafer, Yasar G. Mutlu, Mucahit Yilmaz, Oguz Dogan, Mihrimah Ozkan, and Cengiz S. Ozkan. "Fabrication and Surface Morphology of YBCO Superconducting Thin films on STO Buffered Si Substrates." MRS Proceedings 1454 (2012): 129–34. http://dx.doi.org/10.1557/opl.2012.1069.

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ABSTRACTPulsed Electron Deposition (PED) is an attractive alternative to Pulsed Laser Deposition (PLD) for growing high temperature superconductor thin films because of its relatively low cost. In this study, YBa2Cu3O7-δ(YBCO) thin film has been fabricated on silicon substrates by Pulsed Electron Deposition technique. SrTiO3 (STO) as a buffer layer has been grown between Si substrate and YBCO superconducting layer. The crystalline structures of STO/Si and YBCO/STO/Si films have been investigated by x-ray diffraction (XRD). The surface morphology and microstructure of YBCO/STO/Si thin film have been characterized with atomic force microscope (AFM) and scanning electron microscope (SEM). From the θ-2θ XRD analysis of YBCO thin films, (00l) diffraction peaks are obtained indicating they have a poor c-axis oriented structure. SEM analysis shows that the surfaces of films are crack-free, but they have some particulates. On AFM images, the droplets are clearly observed leading to a roughly surface.

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Chu, H. M., R. T. Lee, S. Y. Hu, and Y. P. Chang. "Rheological Characteristics for Thin Film Elastohydrodynamic Lubrication." Journal of Mechanics 21, no. 2 (June 2005): 77–84. http://dx.doi.org/10.1017/s172771910000455x.

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ABSTRACTThis paper uses three lubrication models to explore the differential phenomenon in the status of thin film lubrication (TFL). According to the viscous adsorption theory, the modified Reynolds equation for thin film elastohydrodynamic lubrication (TFEHL) is derived. In this theory, the film thickness between lubricated surfaces is simplified as three fixed layers across the film, and the viscosity and density of the lubricant vary with pressure in each layer. Under certain conditions, such as a rough or concentrated contact of a nominally flat surface, films may be of nanometer scale. The thin film elastohydrodynamic lubrication (EHL) analysis is performed on a surface forces (SF) model which includes van der waals and solvation forces. The results show that the proposed TFEHL model can reasonably calculate the film thickness and the average relative viscosity under thin film EHL. The adsorption layer thickness and the viscosity influence significantly the lubrication characteristics of the contact conjunction. The differences in pressure distribution and film shape between surface forces model and classical EHL model were obvious, especially in the Hertzian contact area. The solvation force has the greatest influence on pressure distribution.

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Soni, Sandeep, and D. P. Vakharia. "Performance Analysis of Short Journal Bearing under Thin Film Lubrication." ISRN Mechanical Engineering 2014 (April 24, 2014): 1–8. http://dx.doi.org/10.1155/2014/281021.

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The steady state performance analysis of short circular journal bearing is conducted using the viscosity correction model under thin film lubrication conditions. The thickness of adsorbed molecular layers is the most critical factor in studying thin film lubrication, and is the most essential parameter that distinguishes thin film from thick film lubrication analysis. The interaction between the lubricant and the surface within a very narrow gap has been considered. The general Reynolds equation has been derived for calculating thin film lubrication parameters affecting the performance of short circular journal bearing. Investigation for the load carrying capacity, friction force, torque, and power loss for the short circular journal bearing under the consideration of adsorbed layer thickness (2δ) has been carried out. The analysis is carried out for the short bearing approximation (L/D=0.5) using Gumbel’s boundary condition. It has been found that the steady state performance parameters are comparatively higher for short circular journal bearing under the consideration of adsorbed layer thickness than for plain circular journal bearing. The load carrying capability of adsorbed layer thickness considered bearing is observed to be high for the specified operating conditions. This work could promote the understanding and research for the mechanism of the nanoscale thin film lubrication.

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11

Yu, Xin Gang, Hong Wen Ma, Yanbin Zuo, Hui Feng Zhao, Wu Wen Luo, Wenrue Bi, and Li Wang. "TEM and TEM-EDX Analysis of Cross-Section of Anti-Reflective Thin Film and Glass Substrate." Materials Science Forum 475-479 (January 2005): 1579–82. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1579.

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Two-layer antireflective films were prepared on Na-Mg-Ca-Si glass substrate by sol-gel process starting from metal alkoxides: Si(OC2H5)4, Ti(OC4H9)4. The transmittance of glass was increased obviously (>95%), the reflective index was reduced to 1.95 through visible light range. TEM observation showed that SiO2 film is compactly joined to TiO2 film and TiO2 film to the substrate. TEM-EDX analysis of the films, film-substrate interface and substrate revealed that with the increase of Ti content, the content of Mg，Ca and Si decreases, however, the content of Na increases. The diffuse of Na+ from the substrate to the film is negative diffusion.

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Chidambara Kumar, K. N., S. K. Khadeer Pasha, Kalim Deshmukh, K. Chidambaram, and G. Shakil Muhammad. "Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications." International Journal of Nanoscience 17, no. 01n02 (October 12, 2017): 1760004. http://dx.doi.org/10.1142/s0219581x17600043.

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Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using a UV–vis spectrophotometer. We observed an increase in the optical band gap from 2.45 to 3.03[Formula: see text]eV after doping iron in the lead sulfide thin film. The cutoff wavelength lies in the visible region, and hence the grown thin films can be used for optoelectronic and sensor applications. The results from the photoluminescence study show the emission at 500–720[Formula: see text]nm. The vibrating sample magnetometer measurements confirmed that the lead sulfide thin film becomes weakly ferromagnetic material after doping with iron.

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13

Eibl, O., G. Gieres, and H. Behner. "Microstructure of YBa2Cu3O7-x thin films deposited by dc sputtering." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 172–73. http://dx.doi.org/10.1017/s0424820100152835.

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The microstructure of high-Tc YBa2Cu3O7-X thin films deposited by DC-sputtering on SrTiO3 substrates was analysed by TEM. Films were either (i) deposited in the amorphous state at substrate temperatures < 450°C and crystallised by a heat treatment at 900°C (process 1) or (ii) deposited at around 740°C in the crystalline state (process 2). Cross sections were prepared for TEM analyses and are especially useful for studying film substrate interdiffusion (fig.1). Films deposited in process 1 were polycristalline and the grain size was approximately 200 nm. Films were porous and the size of voids was approximately 100 nm. Between the SrTiO3 substrate and the YBa2Cu3Ox film a densly grown crystalline intermediate layer approximately 150 nm thick covered the SrTiO3 substrate. EDX microanalyses showed that the layer consisted of Sr, Ba and Ti, however, did not contain Y and Cu. Crystallites of the layer were carefully tilted in the microscope and diffraction patterns were obtained in five different poles for every crystallite. These patterns were consistent with the phase (Ba1-XSrx)2TiO4. The intermediate layer was most likely formed during the annealing at 900°C. Its formation can be understood as a diffusion of Ba from the amorphously deposited film into the substrate and diffusion of Sr from the substrate into the film. Between the intermediate layer and the surface of the film the film consisted of YBa2Cu3O7-x grains. Films prepared in process 1 had Tc(R=0) close to 90 K, however, critical currents were as low as jc = 104A/cm2 at 77 K.

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Rao, T. V. V. L. N., S. Sufian, and Norani Muti Mohamed. "Analysis of Electric Double Layer on Thin Film Lubrication with Partial Slip." Advanced Materials Research 925 (April 2014): 538–42. http://dx.doi.org/10.4028/www.scientific.net/amr.925.538.

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This paper presents a model of electro-viscosity considering effects of electric double layer on thin film lubrication with partial slip. The apparent viscosity and modified Reynolds equation are derived with consideration of electric double layer with partial slip. The apparent viscosity includes the combined effects of the electro-viscosity, the viscosity of bulk fluid and slip length. The electro-viscosity depends on the zeta potential. The effects of electric double layer with partial boundary slip on load capacity are analyzed for one-dimensional slider bearing. The electric double layer leads to an increase in apparent viscosity of lubricant and hence load capacity in thin film lubrication. Electric double layer with partial slip on parallel bearing surfaces increases the bearing load capacity.

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15

Shin, Moo Whan, and Sun Ho Jang. "Thermal analysis of active layer in organic thin-film transistors." Organic Electronics 13, no. 5 (May 2012): 767–70. http://dx.doi.org/10.1016/j.orgel.2012.01.032.

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Wong, King Leung, Hung En Chen, and Wen Lih Chen. "Study on the Buffer Layer of CIS Thin Film Solar Cell by Separate-Melting Chemical Bath Deposition Methods." Advanced Materials Research 512-515 (May 2012): 178–81. http://dx.doi.org/10.4028/www.scientific.net/amr.512-515.178.

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In this work, cadmium sulphide (CdS) buffer layer of CuInSe2 (CIS) thin film solar cell is fabricated by separate-melting Chemical Bath Deposition (CBD) methods. The reason of adopting the CdS thin film as the buffer layer of CIS thin film solar cell is that the CdS can act as energy gap buffer and reduce the band-offset between CIS absorbing layer and the Transparent Conductive Oxide layer. The CdS thin films are generated by the separate-melting CBD methods in situation of atmosphere. In order to analyze the characteristics of the CdS thin films conveniently, the CdS thin films are firstly fabricated on Soda-lime, and the final found optimal CdS thin film is fabricated on the CIS/Mo/Soda-lime glasses. Then the p-n diode characteristic of the CdS/CIS/Mo/Soda-lime glasses is measured by four-point probe. And the CdS thin films are fabricated by the separate-melting CBD methods through various combinations of time interval from 40 and 60 minutes and temperature range from 70,75,80 and 85°C. It is found that the combination of 85°C and 60 minutes is optimal to obtain smoother surface and more uniform thickness of CdS thin film. Additionally from optical characteristic analysis, in situation of emitted light wave length 500 nm, the transmittance of the cadmium sulphide thin film is 61%. Meanwhile, the band gap is close to theoretical value of 2.4 eV.

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Lee, Jung-Kun, Hyun-Suk Jung, Dong-Wan Kim, Chang-Hoon Kim, and Kug Sun Hong. "Influence of Substrates on the Crystal Structure of Pulsed Laser Deposited Pb(Mg1/3Nb2/3)O3–29% PbTiO3 Thin Films." Journal of Materials Research 17, no. 5 (May 2002): 1030–34. http://dx.doi.org/10.1557/jmr.2002.0152.

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Lead magnesium niobate–lead titanate [Pb(Mg1/3Nb2/3)O3 (PMN)–PbTiO3 (PT)] films were synthesized using pulsed laser deposition, and the effect of substrates on the deposition behavior of the PMN–PT film was investigated. Phase evolution of PMN–PT thin films was found to depend significantly on the type of the substrate used during deposition. Though a mixture of pyrochlore and perovskite was observed when films were deposited on a Pt/TiO2/SiO2/Si substrate, the oxide substrates, such as (Ba0.5Sr0.5)RuO3/Si, SrTiO3, and LaAlO3, enabled the deposition of pure perovskite. Scanning Auger microprobe, transmission electron microscope, and x-ray diffraction analysis showed that an interfacial layer between the substrates and the oxide film was central to the phase evolution behavior. On the Pt/TiO2/SiO2/Si substrate, an interfacial layer of lead–platinum (Pb–Pt) played a major role in the formation of the pyrochlore phase. However, on oxide substrates, there was no interfacial layer and interdiffusion of A-site cations was observed between the PMN film and the oxide electrodes.

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Addonizio, Maria Luisa, and Luigi Fusco. "Adhesion and Barrier Properties Analysis of Silica-Like Thin Layer on Polyethylene Naphthalate Substrates for Thin Film Solar Cells." Advances in Science and Technology 74 (October 2010): 113–18. http://dx.doi.org/10.4028/www.scientific.net/ast.74.113.

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In this investigation the surface properties optimisation of a flexible PEN foil to use as substrate for thin film silicon solar cells is presented. The polymer surface, usually hydrophobic and inactive to chemical reactions, can give poor adhesion for films deposited on it. Furthermore, gas desorption from the polymer sometimes causes serious problems to the quality of the devices. To overcome these problems a thin film of silica-like functional material has been developed on polymer foil. Silica-like films were produced by sol-gel process starting from an organic silanes compound (APTMS) as precursor and the solution was deposited by spin-coating. Amorphous silica-like films were obtained with a hydrophilic surface. They were smooth, dense, homogeneous, transparent and exhibited an excellent adhesion to the polymer substrate due to the chemical bond between amine groups of the APTMS with carbonyl bonds in PEN. Physical properties such as elastic modulus and hardness and the UV irradiation effect on structure and surface hydrophilicity of the silica-like coatings have been analysed. A water contact angle of 34° was obtained after UV irradiation. Nanoindentation analysis showed that the silica-like coating have an hardness and an elastic modulus up to 2.0 GPa and 13.2 GPa respectively much higher than that of pure PEN. Oxygen permeability measured on silica-like coated PEN gave a value of 5.7 x 10-9 cc m/m2 s atm showing larger barrier properties respect to pure PEN. Strong adhesion, improved mechanical properties and barrier effect of our silica-like coating make the modified PEN substrate suitable to be used in thin film solar cell technology.

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Bonavolontà, C., C. de Lisio, M. Valentino, F. Laviano, G. P. Pepe, F. Kurth, K. Iida, A. Ichinose, and I. Tsukada. "Influence of Fe Buffer Layer on Co-Doped BaFe2As2Superconducting Thin Films." Advances in Condensed Matter Physics 2015 (2015): 1–8. http://dx.doi.org/10.1155/2015/753108.

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A systematic characterization of Co-doped BaFe2As2(Ba-122) thin films has been carried out. Two samples were available, one grown on CaF2substrate and the other on MgO with an Fe buffer layer. The goal was to investigate films’ magnetic and superconducting properties, their reciprocal interplay, and the role played by the Fe buffer layer in modifying them. Morphological characterization and Energy Dispersive X-ray analyses on the Fe-buffered sample demonstrate the presence of diffused Fe close to the Co-doped Ba-122 outer surface as well as irregular holes in the overlying superconducting film. These results account for hysteresis loops obtained with magneto-optic Kerr effect measurements and observed at both room and low temperatures. The magnetic pattern was visualized by magneto-optical imaging with an indicator film. Moreover, we investigated the onset of superconductivity through a measure of the superconducting energy gap. The latter is strictly related to the decay time of the excitation produced by an ultrashort laser pulse and has been determined in a pump-probe transient reflectivity experiment. A comparison of results relative to Co-doped Ba-122 thin films with and without Fe buffer layer is finally reported.

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Cyza, A., Ł. Cieniek, and A. Kopia. "Perovskite La1-xSrxFeO3 Thin Films Deposited by Laser Ablation Process." Archives of Metallurgy and Materials 61, no. 2 (June 1, 2016): 1063–67. http://dx.doi.org/10.1515/amm-2016-0179.

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Abstract The aim of the research was to investigate the influence of strontium on the structure of thin films La1-xSrxFeO3 (x = 0; 0,1; 0,2). The LaFeO3 and Sr-doped LaFeO3 films were produced by pulsed laser deposition (PLD) on Si (100) substrate using the Nd-YAG (λ = 266 nm) laser. SEM, AFM and XRD methods were used to characterize the structure and morphology of the thin films. X-Ray Diffraction analysis showed only the LaFeO3 phase in the undoped thin film and the La0.9Sr0.1O3 and La0.8Sr0.2O3 phases in thin films doped by Sr. The mean crystallite size, calculated by Williamson-Hall method, was smaller (of the order of 18 nm) in films doped by Sr. SEM analysis showed small droplets in thin films doped by Sr. Highly developed surface layer was observed using the AFM microscope for thin films doped by Sr.

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KIYAMA, Seiichi, Yutaka HIRONO, Hiroshi HOSOKAWA, Tadahito MORIGUCHI, Shoichi NAKANO, and Masato OSUMI. "Temperature distribution analysis in multi-layer thin film structures by laser beam irradiation." Journal of the Japan Society for Precision Engineering 56, no. 8 (1990): 1500–1506. http://dx.doi.org/10.2493/jjspe.56.1500.

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Nordseth, Ørnulf, Raj Kumar, Kristin Bergum, Laurentiu Fara, Constantin Dumitru, Dan Craciunescu, Florin Dragan, et al. "Metal Oxide Thin-Film Heterojunctions for Photovoltaic Applications." Materials 11, no. 12 (December 19, 2018): 2593. http://dx.doi.org/10.3390/ma11122593.

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Silicon-based tandem solar cells incorporating low-cost, abundant, and non-toxic metal oxide materials can increase the conversion efficiency of silicon solar cells beyond their conventional limitations with obvious economic and environmental benefits. In this work, the electrical characteristics of a metal oxide thin-film heterojunction solar cell based on a cuprous oxide (Cu2O) absorber layer were investigated. Highly Al-doped n-type ZnO (AZO) and undoped p-type Cu2O thin films were prepared on quartz substrates by magnetron sputter deposition. The electrical and optical properties of these thin films were determined from Hall effect measurements and spectroscopic ellipsometry. After annealing the Cu2O film at 900 °C, the majority carrier (hole) mobility and the resistivity were measured at 50 cm2/V·s and 200 Ω·cm, respectively. Numerical modeling was carried out to investigate the effect of band alignment and interface defects on the electrical characteristics of the AZO/Cu2O heterojunction. The analysis suggests that the incorporation of a buffer layer can enhance the performance of the heterojunction solar cell as a result of reduced conduction band offset.

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Kataoka, Y., and T. Arai. "Application of Multi-Layer Thin Film Analysis by X-ray Spectrometry Using the Fundamental Parameter Method." Advances in X-ray Analysis 33 (1989): 225–35. http://dx.doi.org/10.1154/s0376030800019625.

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The fundamental parameter method for x-ray spectrometry has been used most commonly for bulk samples, because it permits an analysis utilizing a minimum number of standards, even for samples with complicated matrices. The need for the analysis of thin film materials, which includes multi-layer films, has been increasing in recent years along with the rapid progress of high technologies. However, there have been few reports that deal with the application of fundamental parameter methods to multi-layer thin films. There may be two situations in the analysis of thin films. In routine analysis of quality control applications, they usually require precise analysis. Fortunately, it is possible to prepare well characterized standards similar to the unknowns.

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Lee, Ping-Yuan, Endrika Widyastuti, Tzu-Che Lin, Chen-Tien Chiu, Fu-Yang Xu, Yaw-Teng Tseng, and Ying-Chieh Lee. "The Phase Evolution and Photocatalytic Properties of a Ti-TiO2 Bilayer Thin Film Prepared Using Thermal Oxidation." Coatings 11, no. 7 (July 3, 2021): 808. http://dx.doi.org/10.3390/coatings11070808.

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Ti-TiO2 bilayer thin films were successfully prepared onto a glass substrate using magnetron sputtering with different TiO2 bottom layer conditions. These represent a lack of (as-deposited) and full oxygen content (annealed). Single-layer Ti was additionally used as a control. The influence of oxygen diffusion phenomena of the bottom layer of TiO2 to the upper layer of Ti thin films at different oxidation temperatures on structural, optical, and photocatalytic performance was investigated. X-ray diffraction (XRD) results confirmed that the crystalline phases coexisting on thin-film samples oxidized at 450 °C were TiO, TiO1.4, (bilayer, as-deposited TiO2), anatase (bilayer, annealed TiO2), and rutile (single and bilayer). This finding showed that the film’s phase structure evolution is significantly affected by oxygen diffusion from the bottom layer. Further increasing the thermal oxidation temperature caused a notable decline in the amorphous zone in bilayer thin films based on TEM analysis. Bilayer thin films lead to higher degradation of methylene blue under UV light radiation (63%) than single-layer films (45%) oxidized at 450 °C. High photocatalytic activity performance was found in the bilayer annealed TiO2-Ti thin-film sample. This study demonstrates that the bilayer modification strategy promotes the oxygen-induced bottom layer of TiO2 bilayer thin films.

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Chen, Dyi-Cheng, Ming-Fei Chen, and Ming-Ren Chen. "Thermal Effect on a CIGS Thin-Film Solar Cell P2 Layer by Using a UV Laser." Advances in Mechanical Engineering 6 (January 1, 2014): 723136. http://dx.doi.org/10.1155/2014/723136.

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This study used ANSYS simulation software for analyzing an ultraviolet (UV) (355 nm) laser processing system. The laser apparatus was used in a stainless steel CIGS solar cell P2 layer for simulation analysis. CIGS films process order according to S iO2 layer, molybdenum electrode, CIGS absorbed layer, CdS buffered layer, i-ZnO penetrate light layer, TCO front electrode, MgF resist reflected materials, andelectrode materials. The simulation and experimental results were compared to obtain a laser-delineated P2 laser with a low melting and vaporization temperature. According to the simulation results, the laser function time was 135 μs, the UV laser was 0.5 W, and the P2 layer thin films were removed. The experimental results indicated that the electrode pattern of the experiment was similar to that of the simulation result, and the laser process did not damage the base plate. The analysis results confirm that the laser apparatus is effective when applied to a stainless steel CIGS solar cell P2 layer.

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Kotula, Paul G., and C. Barry Carter. "The measurement of thin-film reaction layers with high-resolution FESEM." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 330–31. http://dx.doi.org/10.1017/s0424820100138026.

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Thin-film reactions in ceramic systems are of increasing importance as materials such as oxide superconductors and ferroelectrics are applied in thin-film form. In fact, reactions have been found to occur during the growth of YBa2Cu3O6+x on ZrO2. Additionally, thin-film reactions have also been intentionally initiated for the production of buffer layers for the subsequent growth of high-Tc superconductor thin films. The problem is that the kinetics of ceramic thin-film reactions are not well understood when the reaction layer is very thin; that is, when the rate-limiting step is a phase-boundary reaction as opposed to diffusion of the reactants through the product layer. In this case, the reaction layer is likely to be laterally non-uniform. In the present study, the measurement of thin reaction-product layers is accomplished by first digitally acquiring backscattered-electron images in a high-resolution field-emission scanning electron microscope (FESEM) followed by image analysis. Furthermore, the problem of measuring such small thicknesses (e.g., 20-500nm) over lengths of interfaces longer than 3mm is addressed.

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Larson, D. J., B. D. Wissman, R. L. Martens, R. J. Viellieux, T. F. Kelly, T. T. Gribb, H. F. Erskine, and N. Tabat. "Advances in Atom Probe Specimen Fabrication from Planar Multilayer Thin Film Structures." Microscopy and Microanalysis 7, no. 1 (January 2001): 24–31. http://dx.doi.org/10.1007/s100050010058.

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AbstractA sample preparation method has been developed whereby sharp needle-shaped specimens for atom probe analysis are fabricated from multilayer thin films deposited onto silicon substrates. The specimens are fabricated in an orientation such that atom probe composition profiles across the layer interfaces can be determined with atomic-layer spatial resolution, i.e., the layer normals are parallel to the needle axis. The method uses standard silicon etching techniques and focused ion-beam milling. The feasibility and utility of this technique are shown through its application to a NiFe/CoFe/Cu/CoFe-based thin film structure.

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Kumar, Manoj, Raghunandan Seelaboyina, Kshitij Taneja, Alekhya Venkata Madiraju, Anup Kumar Keshri, Sarang Mahajan, and Kulvir Singh. "Synthesis of CIS Nanoink and Its Absorber Layer without Selenization." Conference Papers in Energy 2013 (May 23, 2013): 1–3. http://dx.doi.org/10.1155/2013/739532.

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Highly crystalline CIS nanoink was synthesized using highly efficient microwave route. Thin films of CIS were fabricated using the developed ink by drop casting method. XRD pattern of CIS thin films indicates that a chalcopyrite phase with good crystallinity can be obtained using developed ink and that the composition of precursor ink can be transferred directly to the thin film without change in the stoichiometry. The developed ink alleviates the need of organic binders/dispersant and high temperature selenization using highly toxic H2Se gas (or Na2Se as a Se source) after deposition of thin film absorber layer. UV-VIS-NIR absorption analysis indicates that CIS thin film has a band gap of around 1.18 eV.

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ZHAO, B. R., X. J. ZHOU, J. LI, P. XU, S. L. JIA, F. WU, C. DONG, et al. "GROWTH AND PROPERTIES OF Sr1−xNdxCuO2 INFINITE-LAYER PHASE THIN FILMS." Modern Physics Letters B 07, no. 24n25 (October 30, 1993): 1585–92. http://dx.doi.org/10.1142/s0217984993001600.

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Thins films of Sr 1−x Nd x CuO 2 (infinite CuO 2 layer) compounds with x=0.10–0.15 have been prepared by the rf-magnetron sputtering method. X-ray diffraction analysis showed that for the parent compound of SrCuO 2, there is a solubility limit x~0.11 for Nd. Corresponding to this limit, a single infinite- CuO 2-layer phase (Nd, Sr)CuO 2 thin film with smallest c-axis length was obtained. Exceeding this limit, infinite-layer phases with longer c-axis and long c-axis tetragonal phase (the second phase) coexisted. Further, the superconducting indication presented by both resistive transition (at ~28 K) and Meissner effect was also found for a thin-film sample with x~0.11.

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Adachi, Y., S. Abe, K. Matsuda, and M. Nose. "The Analysis Of Structure For The Multi-Layered Of Ge/TiO2 Films Prepared By The Differential Prressure Co-Sputtering." Archives of Metallurgy and Materials 60, no. 2 (June 1, 2015): 963–64. http://dx.doi.org/10.1515/amm-2015-0239.

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Abstract We tried to fabricate the Ge/TiO2 composite films with the differential pressure (pumping) co-sputtering (DPCS) apparatus in order to improve the optical properties. In the study, the micro structure of these thin films has been evaluated. TEM image revealed that the thin film was alternately layered with TiO2 and Ge, lattice fringes were observed both of Ge layer and TiO2 layer. There were portions that lattice fringe of Ge was disturbed near the interface of Ge and TiO2. X-ray photoelectron spectroscopy elucidated that there were few germanium oxides and a part with the thin film after annealed.

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Volkov, Serhii, Maros Gregor, Tomas Roch, Leonid Satrapinskyy, Branislav Grančič, Tomas Fiantok, and Andrej Plecenik. "Superconducting properties of very high quality NbN thin films grown by pulsed laser deposition." Journal of Electrical Engineering 70, no. 7 (December 1, 2019): 89–94. http://dx.doi.org/10.2478/jee-2019-0047.

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Abstract In this work, we study the effect of the various substrates on the growth and superconducting properties of NbN thin films grown by using pulsed laser ablation in a N2 + 1%H2 atmosphere on MgO, Al2O3 and Si substrates. Structural and superconducting analyses of the films demonstrate that using MgO and Al2O3 substrates can significantly improve the film properties compared to Si substrate. The X-ray diffraction data indicate that MgO and Al2O3 substrates produce highly oriented superconducting NbN films with large coherent domain size in the out-of plane direction on the order of layer thickness and with a superconducting transition temperature of 13.1 K and 15.2 K, respectively. On the other hand, the NbN film grown on the Si substrate exhibits random polycrystalline orientation. Together with the smallest coherent domain size it leads to the lower critical temperature of 8.3 K. Finally, by using a passivation surface layer we are able to improve superconducting properties of NbN thin film and we observe superconducting transition temperature 16.6 K, the one of the highest value reported so far for 50 nm thick NbN film on sapphire.

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Chang, Zue Chin, Yi Chen Lin, Chih Yuan Chen, and Chien Chon Chen. "Fabrication of ZnS Thin Film Buffer Layer in Solar Cell by Radio Frequency Sputtering Method." Advanced Materials Research 894 (February 2014): 386–90. http://dx.doi.org/10.4028/www.scientific.net/amr.894.386.

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The present study aims to investigate the influence of Coring glass substrate temperature on the topography, deposition rate, crystal structure, optical, and electrical properties of ZnS thin films produced by magnetic radio frequency sputtering method. From plain view SEM micrographs, the pebble structure has shown in all ZnS thin films deposited at various substrate temperatures. Through higher substrate temperature, smaller ZnS grains can be obtained in the present study. From XRD analysis, ZnS thin film exhibits hexagonal Wurtzite structure. When thickness of ZnS thin film arrive 300nm, optical transmission rate can be above 85% regardless of substrate temperature and gets optical energy barrier of 3.9 eV. From electrical measurement, the variation of resistivity with temperature exhibits a linear relationship for ZnS thin film.

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Lee, Myeong-Hoon, Yeon-Won Kim, Seul-Gee Lee, Jae-Wook Kang, Jun-Mu Park, Kyung-Man Moon, and Yun-Hae Kim. "Influence of annealing temperatures on corrosion resistance of magnesium thin film-coated electro-galvanized steel." Modern Physics Letters B 29, no. 06n07 (March 20, 2015): 1540015. http://dx.doi.org/10.1142/s0217984915400151.

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To improve the corrosion resistance of an electro-galvanized steel sheet, we deposited magnesium film on it using a vacuum evaporation method and annealed the films at 250–330°C. The zinc–magnesium alloy is consequently formed by diffusion of magnesium into the zinc coating. From the anodic polarization test in 3% NaCl solution, the films annealed at 270–290°C showed better corrosion resistance than others. In X-ray diffraction analysis, ZnMg 2 was detected throughout the temperature range, whereas Mg 2 Zn 11 and FeZn 13 were detected only in the film annealed at 310°C. The depth composition profile showed that the compositions of Mg at 270–290°C are evenly and deeply distributed in the film surface layer. These results demonstrate that 270–290°C is a proper temperature range to produce a layer of MgZn 2 intermetallic compound to act as a homogenous passive layer.

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Zhang, Lei, Man Li, Hai Jian Li, and Xin Song. "Measurement of Multilayer Film Thickness Using X-Ray Fluorescence Spectrometer." Key Engineering Materials 726 (January 2017): 85–89. http://dx.doi.org/10.4028/www.scientific.net/kem.726.85.

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Energy dispersive X-ray fluorescence spectrometry (EDXRF) allows a rapid determination of the concentration of elemental constituents or the thickness of thin film, it has been widely used in the industry of thin film thickness. But for multilayer film, especially the middle layer, with the absorption and enhance effect of other layers, the thickness and intensity of the middle layer is not a linear relationship. This paper reports a quantitative analysis of multilayer film thicknesses based on the use of EDXRF and fundamental parameters method. The thickness of multilayer film can be easily determined with the CTCFP software because it requires a minimum number of pure elementals only. Analysis of double-layer thin films using the CTCFP software shows that the inter-element and inter-layer X-ray absorptions and enhancements in a specimen have been determined properly. Results obtained on the standards confirmed the accuracy of the method.

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Patel, T. H. "Low Temperature Chemical Synthesis of p-Type SnS Thin Films Suitable for Photovoltaic Structures." Solid State Phenomena 209 (November 2013): 82–85. http://dx.doi.org/10.4028/www.scientific.net/ssp.209.82.

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SnS thin film has been deposited on glass substrate at room temperature using low cost, environmental friendly chemical bath deposition (CBD) technique. The structural parameters of the deposited film have been investigated through X- ray diffraction measurements. The deposited SnS film found almost crystalline with preferred orientations along (111) planes revealing an orthorhombic phase of herzenbergite SnS structure. The lattice parameters and dislocation density were determined. The average grain size estimated to be ~ 25 nm. The surface morphology of the film examined using scanning electron microscopy (SEM) show uniform granular and any crack or pinhole free deposition of the film. The chemical compositions of the film examined using energy dispersive analysis of x-rays (EDAX) confirmed stoichiometric deposition. The analysis of the optical absorption spectra of the deposited film in the wavelength range of 200-1200 nm indicate that direct allowed transitions are dominant in the film. The direct band gap of the film determined to be ~ 1.92 eV which is higher than those reported earlier for bulk or single crystal SnS, exhibiting quantum size effect at the observed grain size in the film. This value of band gap is promising for possible use of the deposited film as absorption layer in photovoltaic structures like solar cells. The thermoelectric power measurements indicate p-type electrical conductivity of the deposited films. A systematic study on room temperature chemical deposition and characterization of SnS thin films suitable for absorber layer in photovoltaic structures has been reported.

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Willis, James E. "Simultaneous Determination of the Thickness and Composition of Thin Film Samples Using Fundamental Parameters." Advances in X-ray Analysis 31 (1987): 175–80. http://dx.doi.org/10.1154/s0376030800021972.

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The use of empirical analysis techniques for the simultaneous determination of the thickness and composition of thin film samples usually requires a suite of well characterized similar type standards. While this may be adequate for a quality control application, this requirement severely limits the utility of X-ray fluorescence in the analysis of thin films in a service lab or research environment.The use of fundamental parameters in the analysis of thin films allows the simultaneous determination of the thickness and composition of single and multiple layer thin film unknown samples without the use of similar type standards.

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Lee, Chong Mu, Anna Park, Young Joon Cho, Hyoun Woo Kim, and Jae Gab Lee. "Crystallinity and Photoluminescence Properties of ZnO Films on Zn Buffer Layers Deposited by rf Magnetron Sputtering." Key Engineering Materials 336-338 (April 2007): 567–70. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.567.

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It is very desirable to grow ZnO epitaxial films on Si substrates since Si wafers with a high quality is available and their prices are quite low. Nevertheless, it is not easy to grow ZnO films epitaxially on Si substrates directly because of formation of an amorphous SiO2 layer at the interface of ZnO and Si. A Zn film and an undoped ZnO film were deposited sequentially on an (100) Si substrate by rf magnetron sputtering. The sample was annealed at 700°C in a nitrogen atmosphere. X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) analyses were performed to investigate the cristallinity and surface morphology of the ZnO film. According to the analysis results the crystallinity of a ZnO thin film deposited by rf magnetron sputtering is substantially improved by using a Zn buffer layer. The highest ZnO film quality is obtained with a 110nm thick Zn buffer layer. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.

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38

Renken, K. J., and M. Aboye. "Analysis of film condensation within inclined thin porous-layer coated surfaces." International Journal of Heat and Fluid Flow 14, no. 1 (March 1993): 48–53. http://dx.doi.org/10.1016/0142-727x(93)90039-p.

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39

Horiuchi, Toshihisa, Kenji Ishida, Kouichi Hayashi, Kazumi Matsushige, and Atsushi Shibata. "Novel GIX2 Apparatus for Thin Film Analysis Using Color Laue Method." Advances in X-ray Analysis 39 (1995): 171–80. http://dx.doi.org/10.1154/s0376030800022588.

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In modern technology, thin-layered materials with layer thickness in nanometer ranges have been utilized for various advanced components such as integrated circuits, magnetic heads and disks, X-ray mirrors and coated window glasses. For the analysis of such materials, powerful probes, fluorescence(TXRF)1), diffraction(TXRD) 2-4) and reflectivity(GIXR) 5-7), formed by X-rays in conjunction with total reflection phenomena can provide important information on element composition, crystalline structure, layer thickness, electron density and interfacial roughness.

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Yue, An Na, Kun Peng, Ling Ping Zhou, Jia Jun Zhu, and De Yi Li. "Influence of Ti Layer on the Structure and Properties of Al/Cu Thin Film." Advanced Materials Research 750-752 (August 2013): 1879–82. http://dx.doi.org/10.4028/www.scientific.net/amr.750-752.1879.

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Titanium and aluminum films were deposited on oxygen-free copper substrates by electron beam evaporation method to obtain Al/Cu and Al/Ti/Cu layer composites. Evolution of microstructure and properties of Al/Cu and Al/Ti/Cu thin film during heat treatment processes were investigated by XRD, SEM and electrical properties analysis. The introduce of Ti layer can prevent the formation of Cu-Al intermetallic compounds, and has no obvious influence on the electrical resistivity of Al/Cu thin film, which can be used as a pad in microelectronic package and devices.

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41

Fang, Jianfeng, Jing Huo, Jinyuan Zhang, and Yi Zheng. "Study of a chemical-vapor-deposited diamond thin film on a molybdenum substrate by glancing incidence X-ray diffraction." Powder Diffraction 22, no. 4 (December 2007): 319–23. http://dx.doi.org/10.1154/1.2790933.

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The structure of a chemical-vapor-deposited (CVD) diamond thin film on a Mo substrate was studied using quasi-parallel X-ray and glancing incidence techniques. Conventional X-ray diffraction analysis revealed that the sample consists of a diamond thin film, a Mo2C transition layer, and Mo substrate. The Mo2C transition layer was formed by a chemical reaction between the diamond film and the Mo substrate during the CVD process. A method for layer-thickness determination of the thin film and the transition layer was developed. This method was based on a relationship between X-ray diffraction intensities from the transition layer or its substrate and a function of grazing incidence angles. Results of glancing incidence X-ray diffraction analysis showed that thicknesses of the diamond thin film and the Mo2C transition layer were determined successfully with high precision.

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42

Huang, Rong, Teruyasu Mizoguchi, Kenji Sugiura, Shin-ichi Nakagawa, Hiromichi Ohta, Tomohiro Saito, Kunihito Koumoto, Tsukasa Hirayama, and Yuichi Ikuhara. "Microstructure evolution of Ca0.33CoO2 thin films investigated by high-angle annular dark-field scanning transmissionelectron microscopy." Journal of Materials Research 24, no. 1 (January 2009): 279–87. http://dx.doi.org/10.1557/jmr.2009.0020.

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Microstructures of epitaxial Ca0.33CoO2 thin films, which were grown on m plane and c(0001) plane of α–Al2O3 by the reactive solid-phase epitaxy (R-SPE) method and the subsequent ion-exchange treatment, were investigated in detail by using selected-area electron diffraction, high-resolution transmission electron microcopy, spherical-aberration-corrected high-angle annular dark-field scanning transmission electron microscopy (Cs-corrected HAADF-STEM), and electron energy-loss spectroscopy (EELS). Detailed electron diffraction analyses reveal that the orientation relationships between Ca0.33CoO2 thin film and substrate are and , having an angle of about 43° with for the film deposited on m plane, and and for the film deposited on c(0001) plane though a Ca–Al–O amorphous layer formed between them. CoO seed layer near the interface and residual Co3O4 phase inside the films were observed and identified by HAADF-STEM and EELS in both samples. Such microstructural configuration indicates that the processes of film growth during R-SPE are (i) oxidation of CoO into Co3O4 with residual CoO layer near the interface and (ii) intercalation of Na+ layer into Co3O4 to achieve the layered NaxCoO2 film while forming Na–Al–O amorphous layer at the interface.

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Ruschak, Kenneth J., and Steven J. Weinstein. "Thin-Film Flow at Moderate Reynolds Number." Journal of Fluids Engineering 122, no. 4 (July 5, 2000): 774–78. http://dx.doi.org/10.1115/1.1319499.

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Viscous, laminar, gravitationally-driven flow of a thin film over a round-crested weir is analyzed for moderate Reynolds numbers. A previous analysis of this flow utilized a momentum integral approach with a semiparabolic velocity profile to obtain an equation for the film thickness (Ruschak, K. J., and Weinstein, S. J., 1999, “Viscous Thin-Film Flow Over a Round-Crested Weir,” ASME J. Fluids Eng., 121, pp. 673–677). In this work, a viscous boundary layer is introduced in the manner of Haugen (Haugen, R., 1968, “Laminar Flow Around a Vertical Wall,” ASME J. Appl. Mech. 35, pp. 631–633). As in the previous analysis of Ruschak and Weinstein, the approximate equations have a critical point that provides an internal boundary condition for a bounded solution. The complication of a boundary layer is found to have little effect on the thickness profile while introducing a weak singularity at its beginning. The thickness of the boundary layer grows rapidly, and there is little cumulative effect of the increased wall friction. Regardless of whether a boundary layer is incorporated, the approximate free-surface profiles are close to profiles from finite-element solutions of the Navier-Stokes equation. Similar results are obtained for the related problem of developing flow on a vertical wall (Cerro, R. L., and Whitaker, S., 1971, “Entrance Region Flows With a Free Surface: the Falling Liquid Film,” Chem. Eng. Sci., 26, pp. 785–798). Less accurate results are obtained for decelerating flow on a horizontal wall (Watson, E. J., 1964, “The Radial Spread of a Liquid Jet Over a Horizontal Plane,” J. Fluid Mech. 20, pp. 481–499) where the flow is not gravitationally driven. [S0098-2202(00)01904-0]

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Kim, G., and M. Libera. "Cross-sectional tem analysis of solvent-cast SBS thin films." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 186–87. http://dx.doi.org/10.1017/s0424820100163393.

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Block copolymers can assume a range of microphase-separated morphologies, and the dependence of morphology on temperature and composition is an area of active research. Our work has been studying the morphology of solvent-cast thin films of polystyrene-polybutadiene-polystyrene (SBS) as a function of solvent evaporation rate and post-specimen annealing. This paper describes the analysis of thin film cross-sections to distinguish between possible morphologies. ∼50 nm-0.5 μm thick films were cast from a 0.1 wt% solution of SBS (30 wt%, Mw=105) in toluene. GPC analysis indicates PS/PB diblock and PS homopolymer is present (<5wt% total). 50 μl of solution was deposited on water-polished salt. The solvent evaporation rate was roughly controlled between 200 nl/sec and 0.2 nl/sec. After evaporation, the film was cut, floated from the salt, collected on grids, and exposed to OsO4 vapor (20 min) to stain the PB. After plan view study, some specimens were cross-sectioned. A carbon layer was evaporated on both sides prior to embedding in epoxy and ultramicrotomy(−130°C). Microscopy used a Philips CM3 0ST TEM.

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Kataoka, Y., and T. Arai. "Basic Studies of Multi-Layer Thin Film Analysis Using Fundamental Parameter Method." Advances in X-ray Analysis 33 (1989): 213–23. http://dx.doi.org/10.1154/s0376030800019613.

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X-ray fluorescence analysis is the most suitable method, for the characterization of the thickness and the chemical composition of thin film samples. It is non-destructive, rapid, precise, and accurate for both metal and oxide samples.

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46

Blanton, T. N., and L. S. Hung. "An X-ray diffraction study of Tm-doped BaYYbF8 thin films." Powder Diffraction 11, no. 3 (September 1996): 204–8. http://dx.doi.org/10.1017/s0885715600009131.

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Thulium (Tm) doped barium yttrium ytterbium fluoride (BaYYbF8:Tm) thin films have been deposited on (100) silicon (Si) or (100) and (111) gallium arsenide (GaAs) substrates. When deposited on (100) Si, with an intermediate amorphous silicon dioxide (SiO2) layer, the BaYYbF8:Tm film was found to be polycrystalline, crystallizing in a previously unobserved cubic phase with a lattice constant a = 11.4208 (9) Å . Films deposited on GaAs, with an intermediate calcium fluoride (CaF2) layer, showed a high degree of planar orientation. Pole figure analysis revealed that the BaYYbF8:Tm films deposited on CaF2/GaAs are in-plane aligned dependent upon the substrate orientation.

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47

Lee, Chong Mu, Yeon Kyu Park, Anna Park, and Choong Mo Kim. "Effects of Annealing Atmosphere on the Optoelectrical Properties of ZnO Thin Films Grown by Atomic Layer Deposition." Materials Science Forum 510-511 (March 2006): 670–73. http://dx.doi.org/10.4028/www.scientific.net/msf.510-511.670.

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This paper investigated the effects of annealing atmosphere on the carrier concentration, carrier mobility, electrical resistivity, and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD) and photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results, the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. It was found that annealing undoped ZnO films grown by ALD at a high temperature above 600°C improves the crystallinity and enhances UV emission.

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Cocean, Alexandru, Iuliana Cocean, Nicanor Cimpoesu, Georgiana Cocean, Ramona Cimpoesu, Cristina Postolachi, Vasilica Popescu, and Silviu Gurlui. "Laser Induced Method to Produce Curcuminoid-Silanol Thin Films for Transdermal Patches Using Irradiation of Turmeric Target." Applied Sciences 11, no. 9 (April 28, 2021): 4030. http://dx.doi.org/10.3390/app11094030.

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A new possible method to produce a transdermal patch is proposed in this paper. The study refers to the pulsed laser deposition method (PLD) applied on turmeric target in order to obtain thin layers. Under high power laser irradiation of 532 nm wavelength, thin films containing curcuminoids were obtained on different substrates such as glass and quartz (laboratory investigation) and hemp fabric (practical application). Compared FTIR, SEM-EDS and LIF analyses proved that the obtained thin film chemical composition is mainly demethoxycurcumin and bisdemethoxycurcumin which is evidence that most of the curcumin from turmeric has been demethixylated during laser ablation. Silanol groups with known role into dermal reconstruction are evidenced in both turmeric target and curcuminoid thin films. UV–VIS reflection spectra show the same characteristics for all the curcuminoid thin films, indicating that the method is reproducible. The method proves to be successful for producing a composite material, namely curcuminoid transdermal patch with silanol groups, using directly turmeric as target in the thin film deposited by pulsed laser technique. Double layered patch curcuminoid—silver was produced under this study, proving compatibility between the two deposited layers. The silver layer added on curcuminoid-silanol layer aimed to increase antiseptic properties to the transdermal patch.

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Szindler, M., L. A. Dobrzański, M. M. Szindler, M. Pawlyta, and T. Jung. "Comparison of surface morphology and structure of Al2O3 thin films deposited by sol-gel and ALD methods." Journal of Achievements in Materials and Manufacturing Engineering 2, no. 82 (June 1, 2017): 49–57. http://dx.doi.org/10.5604/01.3001.0010.2354.

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Purpose: of this research was examination Al2O3 thin film obtained with two different method, by sol-gel and ALD, and comparison the surface morphology and structure of deposited thin films. The films deposited on the monocrystalline silicon were tested for their suitability for use in silicon solar cells. Design/methodology/approach: Trimethylaluminum (TMA) was used as a precursor of Al2O3 which is reacted with water enabled the deposition of thin films by ALD method. By the sol-gel method the aluminium tri-sec butoxide (TBA) was used as a precursor to obtain Al2O3 thin films. The aluminium oxide solutions prepared by sol-gel method were deposited by spin coating technique. Examination of the structure and morphology of the surface of the Al2O3 thin films deposited by sol gel and ALD method were performed using atomic force microscope and transmission electron microscope. For the analysis of surface topography deposited thin films atomic force microscope XE-100 from Park Systems was used. Qualitative analysis of the chemical composition was carried out using an energy dispersion spectrometer (EDS). The detailed structural studies were conducted using a Titan 80-300 scanning-transmission electron microscope S/TEM from the FEI Company. Detailed research on the structure of the deposited Al2O3 thin films were performed. The HRTEM images and diffraction SAED were recorded. Findings: The small atoms clusters of a width less than 20 nm were documented. The thin film deposited by spin-coating technique on silicon substrate with 3000 rpm is characterized by RMS and Ra values of, respectively, 0.26 and 0.2 nm. RMS was defined as rough mean square parameter and Ra was defined as the arithmetic mean deviation of the profile from the mean line. An analysis of the frequency histograms of irregularities of the thin film obtained by the spin coating on a silicon substrate at 3000 rpm shows that a large part of them does not exceed 0.5 nm, and the single irregularities reach up to 2.2 nm. When comparing the AFM pictures with the thin films deposited by ALD technique and spin-coating it has been found that the thin films obtained on polished silicon substrates are similar in morphology. The EDS spectra shows the characteristic for oxygen (0.525 keV) and aluminum (1.486 keV) reflections derived from the thin film. In Al2O3 thin film obtained by ALD method the occurrence of α phase of aluminum oxide with a hexagonal structure was identified, just like in the case of thin film deposited by sol-gel. Practical implications: Known aluminium oxide properties and the possibility of obtaining a uniform thin layer show that it can be good material for different application. Precise description of the properties of Al2O3 is very important, since this material is one of the most frequently used in catalyst industry, in medicine, electronics and photovoltaics, as well as a protective layer. The Al2O3 thin film can act as passive and anti-reflective layer simultaneously in silicon solar cell. Using this thin film can simplify the technology of manufacturing silicon solar cells Originality/value: The paper presents researches of aluminium oxide thin films deposited by sol-gel and atomic layer deposition method on monocrystalline silicon.

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Koumoulos, Elias P., Vasiliki P. Tsikourkitoudi, Ioannis A. Kartsonakis, Vassileios E. Markakis, Nikolaos Papadopoulos, Evangelos Hristoforou, and Costas A. Charitidis. "Synthesis, structural and nanomechanical properties of cobalt based thin films." International Journal of Structural Integrity 6, no. 2 (April 13, 2015): 225–42. http://dx.doi.org/10.1108/ijsi-10-2013-0031.

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Purpose – The purpose of this paper is to produce cobalt (Co)-based thin films by metalorganic chemical vapor deposition (CVD) technique and then to evaluate structural and mechanical integrity. Design/methodology/approach – Co-based thin films were produced by metalorganic CVD technique. Boronizing, carburization and nitridation of the produced Co thin films were accomplished through a post-treatment stage of thermal diffusion into as-deposited Co thin films, in order to produce cobalt boride (Co2B), cobalt carbide and cobalt nitride thin films in the surface layer of Co. The surface topography and the crystal structure of the produced thin films were evaluated through scanning electron microscopy and X-ray diffraction, respectively. The mechanical integrity of the produced thin films was evaluated through nanoindentation technique. Findings – The obtained results indicate that Co2B thin film exhibits the highest nanomechanical properties (i.e. H and E), while Co thin film has enhanced plasticity. The cobalt oxide thin film exhibits higher resistance to wear in comparison to the cobalt thin film, a fact that is confirmed by the nanoscratch analysis showing lower coefficient of friction for the oxide. Originality/value – This work is original.

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Journal articles on the topic 'Thin film layer analysis'

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