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Journal articles on the topic 'Thin film layer analysis'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Huang, T. C., and W. Parrish. "X-Ray Fluorescence Analysis of Multi-Layer Thin Films." Advances in X-ray Analysis 29 (1985): 395–402. http://dx.doi.org/10.1154/s0376030800010508.

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AbstractThe characterization of multi-layer thin films by X-ray fluorescence using the fundamental parameter method and the LAMA-III program is described. Analyses of a double-layer FeMn/NiFe and two triple-layer NiFe/Cu/Cr and Cr/Cu/NiFe specimens show that the complex inter-layer absorption and secondary fluorescence effects were properly corrected. The compositions and thicknesses of all layers agreed to ±2% with corresponding single-layer films, a precisian comparable with bulk and single-layer thin film analyses.

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2

Lamovec, J., V. Jovic, M. Vorkapic, B. Popovic, V. Radojevic, and R. Aleksic. "Microhardness analysis of thin metallic multilayer composite films on copper substrates." Journal of Mining and Metallurgy, Section B: Metallurgy 47, no. 1 (2011): 53–61. http://dx.doi.org/10.2298/jmmb1101053l.

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Composite systems of alternately electrodeposited nanocrystalline Ni and Cu films on cold-rolled polycrystalline copper substrates were fabricated. Highly-densified parallel interfaces which can give rise to high strength of composites are obtained by depositing layers at a very narrow spacing. The hardness properties of the composite systems were characterized using Vickers microhardness testing with loads ranging from 1.96 N down to 0.049 N. Above a certain critical penetration depth, a measured hardness value is not the hardness of the electrodeposited film, but the so-called ?composite har

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3

Kaufmann, M., M. Mantler, and F. Weber. "Analysis of Multi-Layer Thin Films by XRF." Advances in X-ray Analysis 37 (1993): 205–12. http://dx.doi.org/10.1154/s0376030800015706.

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AbstractThe characterization of multi-layer thin film properties, such as thicknesses of layers or concentrations of elements, using the fundamental parameter method is discussed. Experimental results are shown for repetitive multi-layers of up to 80 layers. Furthermore the impact of using different characteristic lines on the information depth and the resolving power is discussed for single layers and repetitive multi-layers. Finally, thin films containing light elements are presented; in this case the conventional fundamental parameter theory fails to provide accurate results, perhaps due to

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4

Sasi, Krishnaprasad, Sebastian Mailadil, Fredy Rojas, Aldrin Antony, and Jayaraj Madambi. "Buffer Assisted Epitaxial Growth of Bi1.5Zn1Nb1.5O7 Thin Films by Pulsed Laser Deposition for Optoelectronic Applications." MRS Proceedings 1454 (2012): 183–88. http://dx.doi.org/10.1557/opl.2012.1264.

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ABSTRACTBi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were prepared on Al2O3with a double ZnO buffer layer by pulsed laser deposition. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The sharp intense spots in the SAED pattern also indicates the highly crystalline nature of BZN thin film. The electrical properties of the as deposited thin films were investigated by patterning an inter digital capacitor (IDC) structure on BZN. A high tunability was observed in this epitaxially grown thin films.

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5

Kim, Ig-Hyeon, Changmo Sung, and Sang-Ro Lee. "TEM Observation of Delamination Behavior of c-BN Thin Film." Microscopy and Microanalysis 3, S2 (1997): 483–84. http://dx.doi.org/10.1017/s1431927600009302.

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Cubic boron nitride films were prepared by helicon wave plasma CVD process on (100) Si. The film deposited under the intense impact of energetic ions is usually delaminated from the substrate after deposition. The delamination behavior of c-BN film was investigated with transmission electron microscopy. It is found that moisture in the air, surface roughness of the film and substrate, as well as severe compressive stresses in the film are the primary contributors to film delamination. An aqueous oxidation was verified by EDXS analysis, which generate local stress by volume expansion at the cra

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6

Kong, G., M. O. Jones, J. S. Abell, et al. "Microstructure of laser-ablated superconducting La2CuO4Fx thin films on SrTiO3." Journal of Materials Research 16, no. 11 (2001): 3309–16. http://dx.doi.org/10.1557/jmr.2001.0455.

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Thin films of lanthanum cuprate were grown on SrTiO3 substrates by pulsed laser deposition and made superconducting (Tc ∼ 38 K) through the process of post-deposition fluorination using elemental fluorine. A microstructural analysis showed that the [110] zone of the film grows parallel to the [100] zone of the SrTiO3 substrate, reducing the lattice mismatch from 37.5% to 2.4%. At the film–substrate interface there is an intermediate layer 3–4 nm thick and twin-related grains emanate from this region. Stacking faults are present in the bulk of the film, with misoriented subgrains present at the

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7

Lee, Sang Hyuk, Bo Hyun Seo, and Jong Hyun Seo. "Micro-Scratch Analysis on Adhesion between Thin Films and PES Substrate." Advanced Materials Research 26-28 (October 2007): 1153–56. http://dx.doi.org/10.4028/www.scientific.net/amr.26-28.1153.

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In flexible display, reliability of the thin film/polymer interface is an important issue because adhesion strength dissimilar materials is often inherently poor, and residual stresses arising from thermal mismatches or pressure exerted by vaporized moisture often lead to delaminations of interfaces. In the present study we deposited various thin films such as silicon nitride (SiNx), aluminum metal layer, and indium tin oxide on polyether sulphone (PES) substrate. The film adhesion was determined by micro-scratch test. The adhesion strength, presented by the critical load, Lc, when the film st

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8

Mutlu, Zafer, Yasar G. Mutlu, Mucahit Yilmaz, Oguz Dogan, Mihrimah Ozkan, and Cengiz S. Ozkan. "Fabrication and Surface Morphology of YBCO Superconducting Thin films on STO Buffered Si Substrates." MRS Proceedings 1454 (2012): 129–34. http://dx.doi.org/10.1557/opl.2012.1069.

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ABSTRACTPulsed Electron Deposition (PED) is an attractive alternative to Pulsed Laser Deposition (PLD) for growing high temperature superconductor thin films because of its relatively low cost. In this study, YBa2Cu3O7-δ(YBCO) thin film has been fabricated on silicon substrates by Pulsed Electron Deposition technique. SrTiO3 (STO) as a buffer layer has been grown between Si substrate and YBCO superconducting layer. The crystalline structures of STO/Si and YBCO/STO/Si films have been investigated by x-ray diffraction (XRD). The surface morphology and microstructure of YBCO/STO/Si thin film have

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9

Chu, H. M., R. T. Lee, S. Y. Hu, and Y. P. Chang. "Rheological Characteristics for Thin Film Elastohydrodynamic Lubrication." Journal of Mechanics 21, no. 2 (2005): 77–84. http://dx.doi.org/10.1017/s172771910000455x.

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ABSTRACTThis paper uses three lubrication models to explore the differential phenomenon in the status of thin film lubrication (TFL). According to the viscous adsorption theory, the modified Reynolds equation for thin film elastohydrodynamic lubrication (TFEHL) is derived. In this theory, the film thickness between lubricated surfaces is simplified as three fixed layers across the film, and the viscosity and density of the lubricant vary with pressure in each layer. Under certain conditions, such as a rough or concentrated contact of a nominally flat surface, films may be of nanometer scale. T

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10

Soni, Sandeep, and D. P. Vakharia. "Performance Analysis of Short Journal Bearing under Thin Film Lubrication." ISRN Mechanical Engineering 2014 (April 24, 2014): 1–8. http://dx.doi.org/10.1155/2014/281021.

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The steady state performance analysis of short circular journal bearing is conducted using the viscosity correction model under thin film lubrication conditions. The thickness of adsorbed molecular layers is the most critical factor in studying thin film lubrication, and is the most essential parameter that distinguishes thin film from thick film lubrication analysis. The interaction between the lubricant and the surface within a very narrow gap has been considered. The general Reynolds equation has been derived for calculating thin film lubrication parameters affecting the performance of shor

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11

Yu, Xin Gang, Hong Wen Ma, Yanbin Zuo, et al. "TEM and TEM-EDX Analysis of Cross-Section of Anti-Reflective Thin Film and Glass Substrate." Materials Science Forum 475-479 (January 2005): 1579–82. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1579.

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Two-layer antireflective films were prepared on Na-Mg-Ca-Si glass substrate by sol-gel process starting from metal alkoxides: Si(OC2H5)4, Ti(OC4H9)4. The transmittance of glass was increased obviously (>95%), the reflective index was reduced to 1.95 through visible light range. TEM observation showed that SiO2 film is compactly joined to TiO2 film and TiO2 film to the substrate. TEM-EDX analysis of the films, film-substrate interface and substrate revealed that with the increase of Ti content, the content of Mg，Ca and Si decreases, however, the content of Na increases. The diffuse of Na+ fr

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12

Chidambara Kumar, K. N., S. K. Khadeer Pasha, Kalim Deshmukh, K. Chidambaram, and G. Shakil Muhammad. "Optical Analysis of Iron-Doped Lead Sulfide Thin Films for Opto-Electronic Applications." International Journal of Nanoscience 17, no. 01n02 (2017): 1760004. http://dx.doi.org/10.1142/s0219581x17600043.

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Iron-doped lead sulfide thin films were deposited on glass substrates using successive ionic layer adsorption and reaction method (SILAR) at room temperature. The X-ray diffraction pattern of the film shows a well formed crystalline thin film with face-centered cubic structure along the preferential orientation (1 1 1). The lattice constant is determined using Nelson Riley plots. Using X-ray broadening, the crystallite size is determined by Scherrer formula. Morphology of the thin film was studied using a scanning electron microscope. The optical properties of the film were investigated using

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13

Eibl, O., G. Gieres, and H. Behner. "Microstructure of YBa2Cu3O7-x thin films deposited by dc sputtering." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 172–73. http://dx.doi.org/10.1017/s0424820100152835.

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The microstructure of high-Tc YBa2Cu3O7-X thin films deposited by DC-sputtering on SrTiO3 substrates was analysed by TEM. Films were either (i) deposited in the amorphous state at substrate temperatures < 450°C and crystallised by a heat treatment at 900°C (process 1) or (ii) deposited at around 740°C in the crystalline state (process 2). Cross sections were prepared for TEM analyses and are especially useful for studying film substrate interdiffusion (fig.1). Films deposited in process 1 were polycristalline and the grain size was approximately 200 nm. Films were porous and the size of voi

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14

Rao, T. V. V. L. N., S. Sufian, and Norani Muti Mohamed. "Analysis of Electric Double Layer on Thin Film Lubrication with Partial Slip." Advanced Materials Research 925 (April 2014): 538–42. http://dx.doi.org/10.4028/www.scientific.net/amr.925.538.

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This paper presents a model of electro-viscosity considering effects of electric double layer on thin film lubrication with partial slip. The apparent viscosity and modified Reynolds equation are derived with consideration of electric double layer with partial slip. The apparent viscosity includes the combined effects of the electro-viscosity, the viscosity of bulk fluid and slip length. The electro-viscosity depends on the zeta potential. The effects of electric double layer with partial boundary slip on load capacity are analyzed for one-dimensional slider bearing. The electric double layer

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15

Shin, Moo Whan, and Sun Ho Jang. "Thermal analysis of active layer in organic thin-film transistors." Organic Electronics 13, no. 5 (2012): 767–70. http://dx.doi.org/10.1016/j.orgel.2012.01.032.

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16

Wong, King Leung, Hung En Chen, and Wen Lih Chen. "Study on the Buffer Layer of CIS Thin Film Solar Cell by Separate-Melting Chemical Bath Deposition Methods." Advanced Materials Research 512-515 (May 2012): 178–81. http://dx.doi.org/10.4028/www.scientific.net/amr.512-515.178.

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In this work, cadmium sulphide (CdS) buffer layer of CuInSe2 (CIS) thin film solar cell is fabricated by separate-melting Chemical Bath Deposition (CBD) methods. The reason of adopting the CdS thin film as the buffer layer of CIS thin film solar cell is that the CdS can act as energy gap buffer and reduce the band-offset between CIS absorbing layer and the Transparent Conductive Oxide layer. The CdS thin films are generated by the separate-melting CBD methods in situation of atmosphere. In order to analyze the characteristics of the CdS thin films conveniently, the CdS thin films are firstly f

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17

Lee, Jung-Kun, Hyun-Suk Jung, Dong-Wan Kim, Chang-Hoon Kim, and Kug Sun Hong. "Influence of Substrates on the Crystal Structure of Pulsed Laser Deposited Pb(Mg1/3Nb2/3)O3–29% PbTiO3 Thin Films." Journal of Materials Research 17, no. 5 (2002): 1030–34. http://dx.doi.org/10.1557/jmr.2002.0152.

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Lead magnesium niobate–lead titanate [Pb(Mg1/3Nb2/3)O3 (PMN)–PbTiO3 (PT)] films were synthesized using pulsed laser deposition, and the effect of substrates on the deposition behavior of the PMN–PT film was investigated. Phase evolution of PMN–PT thin films was found to depend significantly on the type of the substrate used during deposition. Though a mixture of pyrochlore and perovskite was observed when films were deposited on a Pt/TiO2/SiO2/Si substrate, the oxide substrates, such as (Ba0.5Sr0.5)RuO3/Si, SrTiO3, and LaAlO3, enabled the deposition of pure perovskite. Scanning Auger microprob

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18

Addonizio, Maria Luisa, and Luigi Fusco. "Adhesion and Barrier Properties Analysis of Silica-Like Thin Layer on Polyethylene Naphthalate Substrates for Thin Film Solar Cells." Advances in Science and Technology 74 (October 2010): 113–18. http://dx.doi.org/10.4028/www.scientific.net/ast.74.113.

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In this investigation the surface properties optimisation of a flexible PEN foil to use as substrate for thin film silicon solar cells is presented. The polymer surface, usually hydrophobic and inactive to chemical reactions, can give poor adhesion for films deposited on it. Furthermore, gas desorption from the polymer sometimes causes serious problems to the quality of the devices. To overcome these problems a thin film of silica-like functional material has been developed on polymer foil. Silica-like films were produced by sol-gel process starting from an organic silanes compound (APTMS) as

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19

Bonavolontà, C., C. de Lisio, M. Valentino, et al. "Influence of Fe Buffer Layer on Co-Doped BaFe2As2Superconducting Thin Films." Advances in Condensed Matter Physics 2015 (2015): 1–8. http://dx.doi.org/10.1155/2015/753108.

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A systematic characterization of Co-doped BaFe2As2(Ba-122) thin films has been carried out. Two samples were available, one grown on CaF2substrate and the other on MgO with an Fe buffer layer. The goal was to investigate films’ magnetic and superconducting properties, their reciprocal interplay, and the role played by the Fe buffer layer in modifying them. Morphological characterization and Energy Dispersive X-ray analyses on the Fe-buffered sample demonstrate the presence of diffused Fe close to the Co-doped Ba-122 outer surface as well as irregular holes in the overlying superconducting film

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20

Cyza, A., Ł. Cieniek, and A. Kopia. "Perovskite La1-xSrxFeO3 Thin Films Deposited by Laser Ablation Process." Archives of Metallurgy and Materials 61, no. 2 (2016): 1063–67. http://dx.doi.org/10.1515/amm-2016-0179.

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Abstract The aim of the research was to investigate the influence of strontium on the structure of thin films La1-xSrxFeO3 (x = 0; 0,1; 0,2). The LaFeO3 and Sr-doped LaFeO3 films were produced by pulsed laser deposition (PLD) on Si (100) substrate using the Nd-YAG (λ = 266 nm) laser. SEM, AFM and XRD methods were used to characterize the structure and morphology of the thin films. X-Ray Diffraction analysis showed only the LaFeO3 phase in the undoped thin film and the La0.9Sr0.1O3 and La0.8Sr0.2O3 phases in thin films doped by Sr. The mean crystallite size, calculated by Williamson-Hall method

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21

KIYAMA, Seiichi, Yutaka HIRONO, Hiroshi HOSOKAWA, Tadahito MORIGUCHI, Shoichi NAKANO, and Masato OSUMI. "Temperature distribution analysis in multi-layer thin film structures by laser beam irradiation." Journal of the Japan Society for Precision Engineering 56, no. 8 (1990): 1500–1506. http://dx.doi.org/10.2493/jjspe.56.1500.

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22

Nordseth, Ørnulf, Raj Kumar, Kristin Bergum, et al. "Metal Oxide Thin-Film Heterojunctions for Photovoltaic Applications." Materials 11, no. 12 (2018): 2593. http://dx.doi.org/10.3390/ma11122593.

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Silicon-based tandem solar cells incorporating low-cost, abundant, and non-toxic metal oxide materials can increase the conversion efficiency of silicon solar cells beyond their conventional limitations with obvious economic and environmental benefits. In this work, the electrical characteristics of a metal oxide thin-film heterojunction solar cell based on a cuprous oxide (Cu2O) absorber layer were investigated. Highly Al-doped n-type ZnO (AZO) and undoped p-type Cu2O thin films were prepared on quartz substrates by magnetron sputter deposition. The electrical and optical properties of these

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23

Kataoka, Y., and T. Arai. "Application of Multi-Layer Thin Film Analysis by X-ray Spectrometry Using the Fundamental Parameter Method." Advances in X-ray Analysis 33 (1989): 225–35. http://dx.doi.org/10.1154/s0376030800019625.

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The fundamental parameter method for x-ray spectrometry has been used most commonly for bulk samples, because it permits an analysis utilizing a minimum number of standards, even for samples with complicated matrices. The need for the analysis of thin film materials, which includes multi-layer films, has been increasing in recent years along with the rapid progress of high technologies. However, there have been few reports that deal with the application of fundamental parameter methods to multi-layer thin films. There may be two situations in the analysis of thin films. In routine analysis of

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24

Lee, Ping-Yuan, Endrika Widyastuti, Tzu-Che Lin, et al. "The Phase Evolution and Photocatalytic Properties of a Ti-TiO2 Bilayer Thin Film Prepared Using Thermal Oxidation." Coatings 11, no. 7 (2021): 808. http://dx.doi.org/10.3390/coatings11070808.

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Ti-TiO2 bilayer thin films were successfully prepared onto a glass substrate using magnetron sputtering with different TiO2 bottom layer conditions. These represent a lack of (as-deposited) and full oxygen content (annealed). Single-layer Ti was additionally used as a control. The influence of oxygen diffusion phenomena of the bottom layer of TiO2 to the upper layer of Ti thin films at different oxidation temperatures on structural, optical, and photocatalytic performance was investigated. X-ray diffraction (XRD) results confirmed that the crystalline phases coexisting on thin-film samples oxi

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25

Chen, Dyi-Cheng, Ming-Fei Chen, and Ming-Ren Chen. "Thermal Effect on a CIGS Thin-Film Solar Cell P2 Layer by Using a UV Laser." Advances in Mechanical Engineering 6 (January 1, 2014): 723136. http://dx.doi.org/10.1155/2014/723136.

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This study used ANSYS simulation software for analyzing an ultraviolet (UV) (355 nm) laser processing system. The laser apparatus was used in a stainless steel CIGS solar cell P2 layer for simulation analysis. CIGS films process order according to S iO2 layer, molybdenum electrode, CIGS absorbed layer, CdS buffered layer, i-ZnO penetrate light layer, TCO front electrode, MgF resist reflected materials, andelectrode materials. The simulation and experimental results were compared to obtain a laser-delineated P2 laser with a low melting and vaporization temperature. According to the simulation r

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26

Kotula, Paul G., and C. Barry Carter. "The measurement of thin-film reaction layers with high-resolution FESEM." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 330–31. http://dx.doi.org/10.1017/s0424820100138026.

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Thin-film reactions in ceramic systems are of increasing importance as materials such as oxide superconductors and ferroelectrics are applied in thin-film form. In fact, reactions have been found to occur during the growth of YBa2Cu3O6+x on ZrO2. Additionally, thin-film reactions have also been intentionally initiated for the production of buffer layers for the subsequent growth of high-Tc superconductor thin films. The problem is that the kinetics of ceramic thin-film reactions are not well understood when the reaction layer is very thin; that is, when the rate-limiting step is a phase-bounda

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27

Larson, D. J., B. D. Wissman, R. L. Martens, et al. "Advances in Atom Probe Specimen Fabrication from Planar Multilayer Thin Film Structures." Microscopy and Microanalysis 7, no. 1 (2001): 24–31. http://dx.doi.org/10.1007/s100050010058.

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AbstractA sample preparation method has been developed whereby sharp needle-shaped specimens for atom probe analysis are fabricated from multilayer thin films deposited onto silicon substrates. The specimens are fabricated in an orientation such that atom probe composition profiles across the layer interfaces can be determined with atomic-layer spatial resolution, i.e., the layer normals are parallel to the needle axis. The method uses standard silicon etching techniques and focused ion-beam milling. The feasibility and utility of this technique are shown through its application to a NiFe/CoFe

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28

Kumar, Manoj, Raghunandan Seelaboyina, Kshitij Taneja, et al. "Synthesis of CIS Nanoink and Its Absorber Layer without Selenization." Conference Papers in Energy 2013 (May 23, 2013): 1–3. http://dx.doi.org/10.1155/2013/739532.

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Highly crystalline CIS nanoink was synthesized using highly efficient microwave route. Thin films of CIS were fabricated using the developed ink by drop casting method. XRD pattern of CIS thin films indicates that a chalcopyrite phase with good crystallinity can be obtained using developed ink and that the composition of precursor ink can be transferred directly to the thin film without change in the stoichiometry. The developed ink alleviates the need of organic binders/dispersant and high temperature selenization using highly toxic H2Se gas (or Na2Se as a Se source) after deposition of thin

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29

ZHAO, B. R., X. J. ZHOU, J. LI, et al. "GROWTH AND PROPERTIES OF Sr1−xNdxCuO2 INFINITE-LAYER PHASE THIN FILMS." Modern Physics Letters B 07, no. 24n25 (1993): 1585–92. http://dx.doi.org/10.1142/s0217984993001600.

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Thins films of Sr 1−x Nd x CuO 2 (infinite CuO 2 layer) compounds with x=0.10–0.15 have been prepared by the rf-magnetron sputtering method. X-ray diffraction analysis showed that for the parent compound of SrCuO 2, there is a solubility limit x~0.11 for Nd. Corresponding to this limit, a single infinite- CuO 2-layer phase (Nd, Sr)CuO 2 thin film with smallest c-axis length was obtained. Exceeding this limit, infinite-layer phases with longer c-axis and long c-axis tetragonal phase (the second phase) coexisted. Further, the superconducting indication presented by both resistive transition (at

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Adachi, Y., S. Abe, K. Matsuda, and M. Nose. "The Analysis Of Structure For The Multi-Layered Of Ge/TiO2 Films Prepared By The Differential Prressure Co-Sputtering." Archives of Metallurgy and Materials 60, no. 2 (2015): 963–64. http://dx.doi.org/10.1515/amm-2015-0239.

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Abstract We tried to fabricate the Ge/TiO2 composite films with the differential pressure (pumping) co-sputtering (DPCS) apparatus in order to improve the optical properties. In the study, the micro structure of these thin films has been evaluated. TEM image revealed that the thin film was alternately layered with TiO2 and Ge, lattice fringes were observed both of Ge layer and TiO2 layer. There were portions that lattice fringe of Ge was disturbed near the interface of Ge and TiO2. X-ray photoelectron spectroscopy elucidated that there were few germanium oxides and a part with the thin film af

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Volkov, Serhii, Maros Gregor, Tomas Roch, et al. "Superconducting properties of very high quality NbN thin films grown by pulsed laser deposition." Journal of Electrical Engineering 70, no. 7 (2019): 89–94. http://dx.doi.org/10.2478/jee-2019-0047.

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Abstract In this work, we study the effect of the various substrates on the growth and superconducting properties of NbN thin films grown by using pulsed laser ablation in a N2 + 1%H2 atmosphere on MgO, Al2O3 and Si substrates. Structural and superconducting analyses of the films demonstrate that using MgO and Al2O3 substrates can significantly improve the film properties compared to Si substrate. The X-ray diffraction data indicate that MgO and Al2O3 substrates produce highly oriented superconducting NbN films with large coherent domain size in the out-of plane direction on the order of layer

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Chang, Zue Chin, Yi Chen Lin, Chih Yuan Chen, and Chien Chon Chen. "Fabrication of ZnS Thin Film Buffer Layer in Solar Cell by Radio Frequency Sputtering Method." Advanced Materials Research 894 (February 2014): 386–90. http://dx.doi.org/10.4028/www.scientific.net/amr.894.386.

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The present study aims to investigate the influence of Coring glass substrate temperature on the topography, deposition rate, crystal structure, optical, and electrical properties of ZnS thin films produced by magnetic radio frequency sputtering method. From plain view SEM micrographs, the pebble structure has shown in all ZnS thin films deposited at various substrate temperatures. Through higher substrate temperature, smaller ZnS grains can be obtained in the present study. From XRD analysis, ZnS thin film exhibits hexagonal Wurtzite structure. When thickness of ZnS thin film arrive 300nm, op

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Lee, Myeong-Hoon, Yeon-Won Kim, Seul-Gee Lee, et al. "Influence of annealing temperatures on corrosion resistance of magnesium thin film-coated electro-galvanized steel." Modern Physics Letters B 29, no. 06n07 (2015): 1540015. http://dx.doi.org/10.1142/s0217984915400151.

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To improve the corrosion resistance of an electro-galvanized steel sheet, we deposited magnesium film on it using a vacuum evaporation method and annealed the films at 250–330°C. The zinc–magnesium alloy is consequently formed by diffusion of magnesium into the zinc coating. From the anodic polarization test in 3% NaCl solution, the films annealed at 270–290°C showed better corrosion resistance than others. In X-ray diffraction analysis, ZnMg 2 was detected throughout the temperature range, whereas Mg 2 Zn 11 and FeZn 13 were detected only in the film annealed at 310°C. The depth composition p

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Zhang, Lei, Man Li, Hai Jian Li, and Xin Song. "Measurement of Multilayer Film Thickness Using X-Ray Fluorescence Spectrometer." Key Engineering Materials 726 (January 2017): 85–89. http://dx.doi.org/10.4028/www.scientific.net/kem.726.85.

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Energy dispersive X-ray fluorescence spectrometry (EDXRF) allows a rapid determination of the concentration of elemental constituents or the thickness of thin film, it has been widely used in the industry of thin film thickness. But for multilayer film, especially the middle layer, with the absorption and enhance effect of other layers, the thickness and intensity of the middle layer is not a linear relationship. This paper reports a quantitative analysis of multilayer film thicknesses based on the use of EDXRF and fundamental parameters method. The thickness of multilayer film can be easily d

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Patel, T. H. "Low Temperature Chemical Synthesis of p-Type SnS Thin Films Suitable for Photovoltaic Structures." Solid State Phenomena 209 (November 2013): 82–85. http://dx.doi.org/10.4028/www.scientific.net/ssp.209.82.

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SnS thin film has been deposited on glass substrate at room temperature using low cost, environmental friendly chemical bath deposition (CBD) technique. The structural parameters of the deposited film have been investigated through X- ray diffraction measurements. The deposited SnS film found almost crystalline with preferred orientations along (111) planes revealing an orthorhombic phase of herzenbergite SnS structure. The lattice parameters and dislocation density were determined. The average grain size estimated to be ~ 25 nm. The surface morphology of the film examined using scanning elect

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Willis, James E. "Simultaneous Determination of the Thickness and Composition of Thin Film Samples Using Fundamental Parameters." Advances in X-ray Analysis 31 (1987): 175–80. http://dx.doi.org/10.1154/s0376030800021972.

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The use of empirical analysis techniques for the simultaneous determination of the thickness and composition of thin film samples usually requires a suite of well characterized similar type standards. While this may be adequate for a quality control application, this requirement severely limits the utility of X-ray fluorescence in the analysis of thin films in a service lab or research environment.The use of fundamental parameters in the analysis of thin films allows the simultaneous determination of the thickness and composition of single and multiple layer thin film unknown samples without t

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Lee, Chong Mu, Anna Park, Young Joon Cho, Hyoun Woo Kim, and Jae Gab Lee. "Crystallinity and Photoluminescence Properties of ZnO Films on Zn Buffer Layers Deposited by rf Magnetron Sputtering." Key Engineering Materials 336-338 (April 2007): 567–70. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.567.

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It is very desirable to grow ZnO epitaxial films on Si substrates since Si wafers with a high quality is available and their prices are quite low. Nevertheless, it is not easy to grow ZnO films epitaxially on Si substrates directly because of formation of an amorphous SiO2 layer at the interface of ZnO and Si. A Zn film and an undoped ZnO film were deposited sequentially on an (100) Si substrate by rf magnetron sputtering. The sample was annealed at 700°C in a nitrogen atmosphere. X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) analyses were performed to inves

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Renken, K. J., and M. Aboye. "Analysis of film condensation within inclined thin porous-layer coated surfaces." International Journal of Heat and Fluid Flow 14, no. 1 (1993): 48–53. http://dx.doi.org/10.1016/0142-727x(93)90039-p.

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Horiuchi, Toshihisa, Kenji Ishida, Kouichi Hayashi, Kazumi Matsushige, and Atsushi Shibata. "Novel GIX2 Apparatus for Thin Film Analysis Using Color Laue Method." Advances in X-ray Analysis 39 (1995): 171–80. http://dx.doi.org/10.1154/s0376030800022588.

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In modern technology, thin-layered materials with layer thickness in nanometer ranges have been utilized for various advanced components such as integrated circuits, magnetic heads and disks, X-ray mirrors and coated window glasses. For the analysis of such materials, powerful probes, fluorescence(TXRF)1), diffraction(TXRD) 2-4) and reflectivity(GIXR) 5-7), formed by X-rays in conjunction with total reflection phenomena can provide important information on element composition, crystalline structure, layer thickness, electron density and interfacial roughness.

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Yue, An Na, Kun Peng, Ling Ping Zhou, Jia Jun Zhu, and De Yi Li. "Influence of Ti Layer on the Structure and Properties of Al/Cu Thin Film." Advanced Materials Research 750-752 (August 2013): 1879–82. http://dx.doi.org/10.4028/www.scientific.net/amr.750-752.1879.

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Titanium and aluminum films were deposited on oxygen-free copper substrates by electron beam evaporation method to obtain Al/Cu and Al/Ti/Cu layer composites. Evolution of microstructure and properties of Al/Cu and Al/Ti/Cu thin film during heat treatment processes were investigated by XRD, SEM and electrical properties analysis. The introduce of Ti layer can prevent the formation of Cu-Al intermetallic compounds, and has no obvious influence on the electrical resistivity of Al/Cu thin film, which can be used as a pad in microelectronic package and devices.

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Fang, Jianfeng, Jing Huo, Jinyuan Zhang, and Yi Zheng. "Study of a chemical-vapor-deposited diamond thin film on a molybdenum substrate by glancing incidence X-ray diffraction." Powder Diffraction 22, no. 4 (2007): 319–23. http://dx.doi.org/10.1154/1.2790933.

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The structure of a chemical-vapor-deposited (CVD) diamond thin film on a Mo substrate was studied using quasi-parallel X-ray and glancing incidence techniques. Conventional X-ray diffraction analysis revealed that the sample consists of a diamond thin film, a Mo2C transition layer, and Mo substrate. The Mo2C transition layer was formed by a chemical reaction between the diamond film and the Mo substrate during the CVD process. A method for layer-thickness determination of the thin film and the transition layer was developed. This method was based on a relationship between X-ray diffraction int

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Huang, Rong, Teruyasu Mizoguchi, Kenji Sugiura, et al. "Microstructure evolution of Ca0.33CoO2 thin films investigated by high-angle annular dark-field scanning transmissionelectron microscopy." Journal of Materials Research 24, no. 1 (2009): 279–87. http://dx.doi.org/10.1557/jmr.2009.0020.

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Microstructures of epitaxial Ca0.33CoO2 thin films, which were grown on m plane and c(0001) plane of α–Al2O3 by the reactive solid-phase epitaxy (R-SPE) method and the subsequent ion-exchange treatment, were investigated in detail by using selected-area electron diffraction, high-resolution transmission electron microcopy, spherical-aberration-corrected high-angle annular dark-field scanning transmission electron microscopy (Cs-corrected HAADF-STEM), and electron energy-loss spectroscopy (EELS). Detailed electron diffraction analyses reveal that the orientation relationships between Ca0.33CoO2

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Ruschak, Kenneth J., and Steven J. Weinstein. "Thin-Film Flow at Moderate Reynolds Number." Journal of Fluids Engineering 122, no. 4 (2000): 774–78. http://dx.doi.org/10.1115/1.1319499.

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Viscous, laminar, gravitationally-driven flow of a thin film over a round-crested weir is analyzed for moderate Reynolds numbers. A previous analysis of this flow utilized a momentum integral approach with a semiparabolic velocity profile to obtain an equation for the film thickness (Ruschak, K. J., and Weinstein, S. J., 1999, “Viscous Thin-Film Flow Over a Round-Crested Weir,” ASME J. Fluids Eng., 121, pp. 673–677). In this work, a viscous boundary layer is introduced in the manner of Haugen (Haugen, R., 1968, “Laminar Flow Around a Vertical Wall,” ASME J. Appl. Mech. 35, pp. 631–633). As in

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Kim, G., and M. Libera. "Cross-sectional tem analysis of solvent-cast SBS thin films." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 186–87. http://dx.doi.org/10.1017/s0424820100163393.

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Block copolymers can assume a range of microphase-separated morphologies, and the dependence of morphology on temperature and composition is an area of active research. Our work has been studying the morphology of solvent-cast thin films of polystyrene-polybutadiene-polystyrene (SBS) as a function of solvent evaporation rate and post-specimen annealing. This paper describes the analysis of thin film cross-sections to distinguish between possible morphologies. ∼50 nm-0.5 μm thick films were cast from a 0.1 wt% solution of SBS (30 wt%, Mw=105) in toluene. GPC analysis indicates PS/PB diblock and

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Kataoka, Y., and T. Arai. "Basic Studies of Multi-Layer Thin Film Analysis Using Fundamental Parameter Method." Advances in X-ray Analysis 33 (1989): 213–23. http://dx.doi.org/10.1154/s0376030800019613.

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X-ray fluorescence analysis is the most suitable method, for the characterization of the thickness and the chemical composition of thin film samples. It is non-destructive, rapid, precise, and accurate for both metal and oxide samples.

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Blanton, T. N., and L. S. Hung. "An X-ray diffraction study of Tm-doped BaYYbF8 thin films." Powder Diffraction 11, no. 3 (1996): 204–8. http://dx.doi.org/10.1017/s0885715600009131.

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Thulium (Tm) doped barium yttrium ytterbium fluoride (BaYYbF8:Tm) thin films have been deposited on (100) silicon (Si) or (100) and (111) gallium arsenide (GaAs) substrates. When deposited on (100) Si, with an intermediate amorphous silicon dioxide (SiO2) layer, the BaYYbF8:Tm film was found to be polycrystalline, crystallizing in a previously unobserved cubic phase with a lattice constant a = 11.4208 (9) Å . Films deposited on GaAs, with an intermediate calcium fluoride (CaF2) layer, showed a high degree of planar orientation. Pole figure analysis revealed that the BaYYbF8:Tm films deposited

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Lee, Chong Mu, Yeon Kyu Park, Anna Park, and Choong Mo Kim. "Effects of Annealing Atmosphere on the Optoelectrical Properties of ZnO Thin Films Grown by Atomic Layer Deposition." Materials Science Forum 510-511 (March 2006): 670–73. http://dx.doi.org/10.4028/www.scientific.net/msf.510-511.670.

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This paper investigated the effects of annealing atmosphere on the carrier concentration, carrier mobility, electrical resistivity, and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD) and photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results, the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than th

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Cocean, Alexandru, Iuliana Cocean, Nicanor Cimpoesu, et al. "Laser Induced Method to Produce Curcuminoid-Silanol Thin Films for Transdermal Patches Using Irradiation of Turmeric Target." Applied Sciences 11, no. 9 (2021): 4030. http://dx.doi.org/10.3390/app11094030.

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A new possible method to produce a transdermal patch is proposed in this paper. The study refers to the pulsed laser deposition method (PLD) applied on turmeric target in order to obtain thin layers. Under high power laser irradiation of 532 nm wavelength, thin films containing curcuminoids were obtained on different substrates such as glass and quartz (laboratory investigation) and hemp fabric (practical application). Compared FTIR, SEM-EDS and LIF analyses proved that the obtained thin film chemical composition is mainly demethoxycurcumin and bisdemethoxycurcumin which is evidence that most

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Szindler, M., L. A. Dobrzański, M. M. Szindler, M. Pawlyta, and T. Jung. "Comparison of surface morphology and structure of Al2O3 thin films deposited by sol-gel and ALD methods." Journal of Achievements in Materials and Manufacturing Engineering 2, no. 82 (2017): 49–57. http://dx.doi.org/10.5604/01.3001.0010.2354.

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Purpose: of this research was examination Al2O3 thin film obtained with two different method, by sol-gel and ALD, and comparison the surface morphology and structure of deposited thin films. The films deposited on the monocrystalline silicon were tested for their suitability for use in silicon solar cells. Design/methodology/approach: Trimethylaluminum (TMA) was used as a precursor of Al2O3 which is reacted with water enabled the deposition of thin films by ALD method. By the sol-gel method the aluminium tri-sec butoxide (TBA) was used as a precursor to obtain Al2O3 thin films. The aluminium o

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Koumoulos, Elias P., Vasiliki P. Tsikourkitoudi, Ioannis A. Kartsonakis, et al. "Synthesis, structural and nanomechanical properties of cobalt based thin films." International Journal of Structural Integrity 6, no. 2 (2015): 225–42. http://dx.doi.org/10.1108/ijsi-10-2013-0031.

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Purpose – The purpose of this paper is to produce cobalt (Co)-based thin films by metalorganic chemical vapor deposition (CVD) technique and then to evaluate structural and mechanical integrity. Design/methodology/approach – Co-based thin films were produced by metalorganic CVD technique. Boronizing, carburization and nitridation of the produced Co thin films were accomplished through a post-treatment stage of thermal diffusion into as-deposited Co thin films, in order to produce cobalt boride (Co2B), cobalt carbide and cobalt nitride thin films in the surface layer of Co. The surface topograp

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