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Relevant bibliographies by topics / Thin film layer analysis

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Academic literature on the topic 'Thin film layer analysis'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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Journal articles on the topic "Thin film layer analysis"

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Huang, T. C., and W. Parrish. "X-Ray Fluorescence Analysis of Multi-Layer Thin Films." Advances in X-ray Analysis 29 (1985): 395–402. http://dx.doi.org/10.1154/s0376030800010508.

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AbstractThe characterization of multi-layer thin films by X-ray fluorescence using the fundamental parameter method and the LAMA-III program is described. Analyses of a double-layer FeMn/NiFe and two triple-layer NiFe/Cu/Cr and Cr/Cu/NiFe specimens show that the complex inter-layer absorption and secondary fluorescence effects were properly corrected. The compositions and thicknesses of all layers agreed to ±2% with corresponding single-layer films, a precisian comparable with bulk and single-layer thin film analyses.

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Lamovec, J., V. Jovic, M. Vorkapic, B. Popovic, V. Radojevic, and R. Aleksic. "Microhardness analysis of thin metallic multilayer composite films on copper substrates." Journal of Mining and Metallurgy, Section B: Metallurgy 47, no. 1 (2011): 53–61. http://dx.doi.org/10.2298/jmmb1101053l.

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Composite systems of alternately electrodeposited nanocrystalline Ni and Cu films on cold-rolled polycrystalline copper substrates were fabricated. Highly-densified parallel interfaces which can give rise to high strength of composites are obtained by depositing layers at a very narrow spacing. The hardness properties of the composite systems were characterized using Vickers microhardness testing with loads ranging from 1.96 N down to 0.049 N. Above a certain critical penetration depth, a measured hardness value is not the hardness of the electrodeposited film, but the so-called ?composite hardness?, because the substrate also participates in the plastic deformations during the indentation process. Dependence of microhardness on layer thickness, Ni/Cu layer thickness ratio and total thickness of the film was investigated. Model of Korsunsky was applied to the experimental data in order to determine the composite film hardness. The microhardness increased with decreasing the layer thickness down to 30 nm and it is consistent with the Hall-Petch relation. Layer thickness and layer thickness ratio are the important parameters which are responsible for making decision of the total film thickness.

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Kaufmann, M., M. Mantler, and F. Weber. "Analysis of Multi-Layer Thin Films by XRF." Advances in X-ray Analysis 37 (1993): 205–12. http://dx.doi.org/10.1154/s0376030800015706.

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AbstractThe characterization of multi-layer thin film properties, such as thicknesses of layers or concentrations of elements, using the fundamental parameter method is discussed. Experimental results are shown for repetitive multi-layers of up to 80 layers. Furthermore the impact of using different characteristic lines on the information depth and the resolving power is discussed for single layers and repetitive multi-layers. Finally, thin films containing light elements are presented; in this case the conventional fundamental parameter theory fails to provide accurate results, perhaps due to the neglect of the impact of the secondary excitation by photoelectrons.

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Sasi, Krishnaprasad, Sebastian Mailadil, Fredy Rojas, Aldrin Antony, and Jayaraj Madambi. "Buffer Assisted Epitaxial Growth of Bi1.5Zn1Nb1.5O7 Thin Films by Pulsed Laser Deposition for Optoelectronic Applications." MRS Proceedings 1454 (2012): 183–88. http://dx.doi.org/10.1557/opl.2012.1264.

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ABSTRACTBi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were prepared on Al2O3with a double ZnO buffer layer by pulsed laser deposition. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The sharp intense spots in the SAED pattern also indicates the highly crystalline nature of BZN thin film. The electrical properties of the as deposited thin films were investigated by patterning an inter digital capacitor (IDC) structure on BZN. A high tunability was observed in this epitaxially grown thin films.

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Kim, Ig-Hyeon, Changmo Sung, and Sang-Ro Lee. "TEM Observation of Delamination Behavior of c-BN Thin Film." Microscopy and Microanalysis 3, S2 (August 1997): 483–84. http://dx.doi.org/10.1017/s1431927600009302.

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Cubic boron nitride films were prepared by helicon wave plasma CVD process on (100) Si. The film deposited under the intense impact of energetic ions is usually delaminated from the substrate after deposition. The delamination behavior of c-BN film was investigated with transmission electron microscopy. It is found that moisture in the air, surface roughness of the film and substrate, as well as severe compressive stresses in the film are the primary contributors to film delamination. An aqueous oxidation was verified by EDXS analysis, which generate local stress by volume expansion at the crack region in the c-BN layer.The cross-sectional TEM micrograph of c-BN film in Fig. 1 shows that a very thin layer of h-BN is deposited before the c-BN layer starts to grow at an early stage of film growth. A columnar structured thin h-BN layer about 20 nm thickness at the interface is clearly separated from the c-BN layer in an aspect of microstructure.

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Kong, G., M. O. Jones, J. S. Abell, P. P. Edwards, S. T. Lees, K. E. Gibbons, I. Gameson, and M. Aindow. "Microstructure of laser-ablated superconducting La2CuO4Fx thin films on SrTiO3." Journal of Materials Research 16, no. 11 (November 2001): 3309–16. http://dx.doi.org/10.1557/jmr.2001.0455.

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Thin films of lanthanum cuprate were grown on SrTiO3 substrates by pulsed laser deposition and made superconducting (Tc ∼ 38 K) through the process of post-deposition fluorination using elemental fluorine. A microstructural analysis showed that the [110] zone of the film grows parallel to the [100] zone of the SrTiO3 substrate, reducing the lattice mismatch from 37.5% to 2.4%. At the film–substrate interface there is an intermediate layer 3–4 nm thick and twin-related grains emanate from this region. Stacking faults are present in the bulk of the film, with misoriented subgrains present at the deposit surface.

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Lee, Sang Hyuk, Bo Hyun Seo, and Jong Hyun Seo. "Micro-Scratch Analysis on Adhesion between Thin Films and PES Substrate." Advanced Materials Research 26-28 (October 2007): 1153–56. http://dx.doi.org/10.4028/www.scientific.net/amr.26-28.1153.

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In flexible display, reliability of the thin film/polymer interface is an important issue because adhesion strength dissimilar materials is often inherently poor, and residual stresses arising from thermal mismatches or pressure exerted by vaporized moisture often lead to delaminations of interfaces. In the present study we deposited various thin films such as silicon nitride (SiNx), aluminum metal layer, and indium tin oxide on polyether sulphone (PES) substrate. The film adhesion was determined by micro-scratch test. The adhesion strength, presented by the critical load, Lc, when the film starts to delaminate, was determined as a function of plasma pretreated on PES substrate.

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Mutlu, Zafer, Yasar G. Mutlu, Mucahit Yilmaz, Oguz Dogan, Mihrimah Ozkan, and Cengiz S. Ozkan. "Fabrication and Surface Morphology of YBCO Superconducting Thin films on STO Buffered Si Substrates." MRS Proceedings 1454 (2012): 129–34. http://dx.doi.org/10.1557/opl.2012.1069.

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ABSTRACTPulsed Electron Deposition (PED) is an attractive alternative to Pulsed Laser Deposition (PLD) for growing high temperature superconductor thin films because of its relatively low cost. In this study, YBa2Cu3O7-δ(YBCO) thin film has been fabricated on silicon substrates by Pulsed Electron Deposition technique. SrTiO3 (STO) as a buffer layer has been grown between Si substrate and YBCO superconducting layer. The crystalline structures of STO/Si and YBCO/STO/Si films have been investigated by x-ray diffraction (XRD). The surface morphology and microstructure of YBCO/STO/Si thin film have been characterized with atomic force microscope (AFM) and scanning electron microscope (SEM). From the θ-2θ XRD analysis of YBCO thin films, (00l) diffraction peaks are obtained indicating they have a poor c-axis oriented structure. SEM analysis shows that the surfaces of films are crack-free, but they have some particulates. On AFM images, the droplets are clearly observed leading to a roughly surface.

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Chu, H. M., R. T. Lee, S. Y. Hu, and Y. P. Chang. "Rheological Characteristics for Thin Film Elastohydrodynamic Lubrication." Journal of Mechanics 21, no. 2 (June 2005): 77–84. http://dx.doi.org/10.1017/s172771910000455x.

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ABSTRACTThis paper uses three lubrication models to explore the differential phenomenon in the status of thin film lubrication (TFL). According to the viscous adsorption theory, the modified Reynolds equation for thin film elastohydrodynamic lubrication (TFEHL) is derived. In this theory, the film thickness between lubricated surfaces is simplified as three fixed layers across the film, and the viscosity and density of the lubricant vary with pressure in each layer. Under certain conditions, such as a rough or concentrated contact of a nominally flat surface, films may be of nanometer scale. The thin film elastohydrodynamic lubrication (EHL) analysis is performed on a surface forces (SF) model which includes van der waals and solvation forces. The results show that the proposed TFEHL model can reasonably calculate the film thickness and the average relative viscosity under thin film EHL. The adsorption layer thickness and the viscosity influence significantly the lubrication characteristics of the contact conjunction. The differences in pressure distribution and film shape between surface forces model and classical EHL model were obvious, especially in the Hertzian contact area. The solvation force has the greatest influence on pressure distribution.

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Soni, Sandeep, and D. P. Vakharia. "Performance Analysis of Short Journal Bearing under Thin Film Lubrication." ISRN Mechanical Engineering 2014 (April 24, 2014): 1–8. http://dx.doi.org/10.1155/2014/281021.

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The steady state performance analysis of short circular journal bearing is conducted using the viscosity correction model under thin film lubrication conditions. The thickness of adsorbed molecular layers is the most critical factor in studying thin film lubrication, and is the most essential parameter that distinguishes thin film from thick film lubrication analysis. The interaction between the lubricant and the surface within a very narrow gap has been considered. The general Reynolds equation has been derived for calculating thin film lubrication parameters affecting the performance of short circular journal bearing. Investigation for the load carrying capacity, friction force, torque, and power loss for the short circular journal bearing under the consideration of adsorbed layer thickness (2δ) has been carried out. The analysis is carried out for the short bearing approximation (L/D=0.5) using Gumbel’s boundary condition. It has been found that the steady state performance parameters are comparatively higher for short circular journal bearing under the consideration of adsorbed layer thickness than for plain circular journal bearing. The load carrying capability of adsorbed layer thickness considered bearing is observed to be high for the specified operating conditions. This work could promote the understanding and research for the mechanism of the nanoscale thin film lubrication.

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Dissertations / Theses on the topic "Thin film layer analysis"

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Paus, K. "The electron microscopy of silicon of sapphire materials." Thesis, University of Oxford, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.382598.

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Ullah, Hanif. "Simulation studies of photovoltaic thin film devices." Doctoral thesis, Universitat Politècnica de València, 2015. http://hdl.handle.net/10251/48800.

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To cope with energy requirements the utilization of renewable energies, particularly the Sun supplies the biggest and abundant energy source in Earth. Photo-voltaic and solar cell are the well advance and burning technology and a field of hot research. Majority of research centers and universities are working in this field. 1G, 2G, 3G and next generation of photo-voltaic cells have been developed and still to improve its efficiency and to decrease it 0.2 $/W cost. Our work mainly based on the theoretical and physical analysis of thin-film Photovoltaic devices. We will explore different software used for the analysis of PV cells, and will analyse different simulation related to solar cells like open circuit voltage VOC, Short circuit current JSC, Fill Factor FF (%) and external Quantum efficiency (%) for thin film solar cell including CIGS, CIS, CGS, CdTe, SnS/CdS/ZnO etc. To have different analysis for different combination and different replacement for materials used in the solar cell fabrication. To cope with the PV cost and environmental hazards we have to find alternate solutions.
Ullah, H. (2015). Simulation studies of photovoltaic thin film devices [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/48800
TESIS

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Bittau, Francesco. "Analysis and optimisation of window layers for thin film CDTE solar cells." Thesis, Loughborough University, 2017. https://dspace.lboro.ac.uk/2134/32642.

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The work presented in this thesis focuses on the investigation and improvement of the window stack of layers for thin film CdTe solar cells fabricated in the Center for Renewable Energy Systems Technology (CREST) laboratories. In particular the aim was to change the standard structure including TCO, high resistive transparent (HRT)layer and CdS which is limited by the low transparency of the CdS layer, to a better performing one. The first result chapter of the thesis describes the study of ZnO HRT layers. ZnO thin films were deposited by radio frequency (RF) magnetron sputtering with different structural, optical and electrical properties which were characterized by X-ray diffraction, electron microscopy, spectrophotometry, Hall Effect method and 4-point probe. ZnO films were then incorporated in CdTe solar cells with the structure: FTO/ZnO/CdS/CdTe/Au back contact and the performance of these devices were compared with the film properties to single out trends and identify optimal film characteristics. By varying the deposition pressure of ZnO films, it was possible to increase their transparency and significantly increase their resistivity. While better transparency positively affected the solar cell current density output and efficiency, the resistivity of ZnO films did not show any clear impact on device efficiency. By increasing the deposition temperature the ZnO film grain size was increased. Increased FF was observed in devices incorporating ZnO layers with bigger grains, although this gain was partially counterbalanced by the Voc degradation, leading to a limited efficiency improvement. Finally the addition of oxygen had the main effect of increasing the resistivity of ZnO films, similarly to what happened with the increase of the sputtering pressure. In this case however, an improvement of FF, Jsc and efficiency was observed, especially at an O2/Ar ratio of 1%. By simulating the solar cells behavior with SCAPS-1D, it was found that these performance change can be explained by the variation of interface properties, precisely the amount of interface defects, rather than by bulk properties. The study presented in the second result chapter focuses on magnesium-doped zinc oxide (MZO) and the variation of its energy band structure. MZO was initially used as the HRT layer within a solar cell structure: FTO/MZO/CdS/CdTe/Au back contact. Sputtering MZO films with a target containing MgO 11 weight% and ZnO 89 weight% allowed for and increased band gap from 3.3 eV of intrinsic ZnO to 3.65 eV for MZO deposited at room temperature. Increasing the superstrate deposition temperature allowed for a further band gap increase up to 3.95 eV at 400 °C due mainly to an conduction band minimum upward shift. It was highlighted the importance to create a positive conduction band offset with the MZO layer conduction band slightly above the CdS conduction band, with an optimum found in this case to be 0.3 eV (efficiency 10.6 %). By creating a positive conduction band offset all the performance parameters (Voc, FF, Jsc, efficiency) significantly increased. One of the reasons for this improvement was found to be a diminished interface recombination due to a more ideal MZO/CdS band alignment. In the second part of this investigation the MZO was used as a replacement for the CdS in a simplified structure: FTO/MZO/CdTe/Au back contact. The concepts used to optimise the performance of these devices also involved tuning the conduction band alignment between MZO/CdTe and efficiencies of 12.5 % were achieved with a at conduction band offset. The efficiency increase was achieved mainly thanks to a better transparency of the MZO layer and a higher Jsc output, compared to devices using a CdS buffer layer. The MZO buffers have been tested in combination with different TCOs. Results are presented in the third result chapter and showed that AZO is a good alternative to FTO working effectively in combination with MZO. AZO/MZO efficiency thin film CdTe solar cells (12.6%, compared to 12.5% with FTO). It was found that increasing the IR transparency of the TCOs leads to a potentially higher Jsc. Achieving a better transparency was obtained by using TCOs with high mobility and lower carrier concentration (AZO and ITiO) and also by using a boro-aluminosilicate glass with low iron content. ITiO yielded the best opto-electrical properties among all the TCO materials. Devices incorporating ITiO however, showed lower performance then those using FTO and AZO. ITO/MZO windows also yielded poor performance. In addition, the ITO films deposited had a high carrier concentration leading to a high NIR absorption by plasma resonance and resulted not ideal for application in thin film CdTe PV.

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Krupa, Katarzyna. "Opto-numerical analysis of AIN piezoelectric thin film operating as an actuation layer in MEMS cantilevers." Phd thesis, Université de Franche-Comté, 2009. http://tel.archives-ouvertes.fr/tel-00544852.

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L'objectif de ce mémoire de thèse consiste à étudier et caractériser les propriétés de couche mince piézoélectrique de nitrure d'aluminium (AlN) utilisées comme une couche d'actionnement de micropoutres multimorphes actionnées piézoélectriquement et à évaluer leurs performances micromécaniques. Ce travail a été effectué en utilisant une méthodologie hybride basée sur l'interaction entre le modèle physique et mathématique des objets étudiés. Ces recherches ont été faites dans le cadre d'une thèse de doctorat effectuée en cotutelle entre l'Université de Franche-Comté et l'Université Technologique de Varsovie. Les deux laboratoires qui ont porté ce projet sont le Département d'Optique P.M. Duffieux de l'Institut FEMTO-ST et l'Institut de Micromécanique et Photonique. Une méthodologie hybride opto-numérique a été proposée pour étudier des microstructures. Cette méthodologie permet la caractérisation complèxe de ces échantillons en identifiant les divergences entre leur modèle physique et mathématique. Cette approche hybride, combinant les données expérimentales obtenues par l'interféromètrie optique et les techniques de nanoindentation avec les résultats de traitements numériques et les équations analytiques, a été appliquée pour étudier les micropoutres silicium où un film mince piézoélectrique d'AlN a été déposé entre les deux électrodes métalliques. Grâce à ces interractions, les propriétés de films AlN ainsi que les comportements micromécaniques de transducteurs piézoélectriques et leur fiabilité ont été déterminés. Nous avons bati un modèle physique de ces dispositifs multimorphes en utilisant la plateforme de métrologie basée sur l'interféromètre de Twyman-Green, offrant les avantages de mesure non-destructive et la haute résolution de techniques optiques. Ainsi, nous avons obtenu des données caractérisant les comportements statiques et dynamiques de micropoutres AlN, ainsi que les différentes propriétés physiques des éléments étudiés. Enfin, quelques mesures de fiabilité de nos microobjets ont permis l'évaluation de l'impact de certains paramètres géométriques et fonctionnels sur les comportements des échantillons et leur durée de vie. Le modèle mathématique proposé s'appuie à la fois sur l'utilisation d'équations analytiques et le calcul par la Méthode des Éléments Finis faisant appel au logiciel ANSYS. Ces calculs ont tenu compte de l'aspect multicouche des éléments étudiés. Ce travail de modélisation a permis d'identifier les paramètres critiques de ces microactionneurs piézoélectriques à la fois du point de vue dimensionel que matériau et de mieux comprendre leurs mécanismes de vieillisement. Par ailleurs, une étude de fiabilité a aussi été réalisée, en incluant des tests accélérés du vieillissement et de la fatigue, ainsi que une étude de la stabilité opérationnelle. Les résultats obtenus nous ont permis de mieux cerner quels sont les paramètres critiques de dommagement le plus probables de ces microobjets et estimer leur temps de vie. Enfin, l'approche opto-numérique proposée a permis d'identifier les étapes de fabrication critiques des micropoutres d'AlN afin d'optimiser leur fabrication. La méthodologie hybride proposée au cours de la thèse de doctorat a étendu la capacité métrologique des techniques d'interférométrie laser. Elle permet de développer les méthodes pour la caractérisation des microstructures, la détermination de leur fiabilité et l'assistance de leur technologie dans la réalisation des dispositifs fiables des paramètres requis. L'application de cette méthodologie a permis de bien comprendre les propriétés de films d'AlN aussi bien que les performances des micropoutres piézoélectriques. Cela peut effectuer en une augmentation de nombre des applications possibles de ces microstructures d'AlN, en améliorant leur qualité et contrôle.

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Li, Han. "Analysis and Applications of Novel Optical Single - and Multi - Layer Structures." University of Dayton / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1450393885.

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Liyanage, Chinthaka. "Specific property analysis of thin-film semiconductors for effective optical logical operations." Connect to full text in OhioLINK ETD Center, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1217089206.

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Ibrahim, Kamarulazizi. "Analysis of amorphous thin-film tandem solar cells and their component layers." Thesis, Heriot-Watt University, 1989. http://hdl.handle.net/10399/923.

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Sharma, Varun. "Evaluation of novel metalorganic precursors for atomic layer deposition of Nickel-based thin films." Master's thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-166627.

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Nickel und Nickel (II) -oxid werden in großem Umfang in fortgeschrittenen elektronischen Geräten verwendet. In der Mikroelektronik-Industrie wird Nickel verwendet werden, um Nickelsilizid bilden. Die Nickelmono Silizid (NiSi) wurde als ausgezeichnetes Material für Source-Drain-Kontaktanwendungen unter 45 nm-CMOS-Technologie entwickelt. Im Vergleich zu anderen Siliziden für die Kontaktanwendungen verwendet wird NiSi wegen seines niedrigen spezifischen Widerstand, niedrigen Kontaktwiderstand, relativ niedrigen Bildungstemperatur und niedrigem Siliziumverbrauchs bevorzugt. Nickel in Nickelbasis-Akkus und ferromagnetischen Direktzugriffsspeicher (RAMs) verwendet. Nickel (II) oxid wird als Transistor-Gate-Oxid und Oxid in resistive RAM genutzt wird. Atomic Layer Deposition (ALD) ist eine spezielle Art der Chemical Vapor Deposition (CVD), das verwendet wird, um sehr glatte sowie homogene Dünnfilme mit hervorragenden Treue auch bei hohen Seitenverhältnissen abzuscheiden. Es basiert auf selbstabschließenden sequentielle Gas-Feststoff-Reaktionen, die eine präzise Steuerung der Filmdicke auf wenige Angström lassen sich auf der Basis. Zur Herstellung der heutigen 3D-elektronische Geräte, sind Technologien wie ALD erforderlich. Trotz der Vielzahl von praktischen Anwendungen von Nickel und Nickel (II) -oxid, sind einige Nickelvorstufen zur thermischen basierend ALD erhältlich. Darüber hinaus haben diese Vorstufen bei schlechten Filmeigenschaften führte und die Prozesseigenschaften wurden ebenfalls begrenzt. Daher in dieser Masterarbeit mussten die Eigenschaften verschiedener neuartiger Nickelvorstufen zu bewerten. Alle neuen Vorstufen heteroleptische (verschiedene Arten von Liganden) und Komplexe wurden vom Hersteller speziell zur thermischen basierend ALD aus reinem Nickel mit H 2 als ein Co-Reaktionsmittel gestaltet. Um die neuartige Vorläufer zu untersuchen, wurde eine neue Methode entwickelt, um kleine Mengen in einer sehr zeitsparend (bis zu 2 g) von Ausgangsstoffen zu testen. Diese Methodologie beinhaltet: TGA / DTA-Kurve analysiert der Vorstufen, thermische Stabilitätstests in dem die Vorläufer (<0,1 g) wurden bei erhöhter Temperatur in einer abgedichteten Umgebung für mehrere Stunden wurde die Abscheidung Experimenten und Film Charakterisierungen erhitzt. Die Abscheidungen wurden mit Hilfe der in situ Quarzmikrowaage überwacht, während die anwendungsbezogenen Filmeigenschaften, wie chemische Zusammensetzung, physikalische Phase, Dicke, Dichte, Härte und Schichtwiderstand wurden mit Hilfe von ex situ Messverfahren untersucht. Vor der Evaluierung neuartiger Nickelvorstufen ein Benchmark ALD-Prozess war vom Referenznickelvorläufer (Ni (AMD)) und Luft als Reaktionspartner entwickelt. Das Hauptziel der Entwicklung und Optimierung von solchen Benchmark-ALD-Prozess war es, Standard-Prozessparameter wie zweite Reaktionspartner Belichtungszeiten, Argonspülung Zeiten, gesamtprozessdruck, beginnend Abscheidungstemperatur und Gasströme zu extrahieren. Diese Standard-Prozessparameter mussten verwendet, um die Prozessentwicklung Aufgabe (das spart Vorläufer Verbrauch) zu verkürzen und die Sublimationstemperatur Optimierung für jede neuartige Vorstufe werden. Die ALD Verhalten wurde in Bezug auf die Wachstumsrate durch Variation des Nickelvorläuferbelichtungszeit, Vorläufer Temperatur und Niederschlagstemperatur überprüft
Nickel and nickel(II) oxide are widely used in advanced electronic devices . In microelectronic industry, nickel is used to form nickel silicide. The nickel mono-silicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node CMOS technology. As compared to other silicides used for the contact applications, NiSi is preferred because of its low resistivity, low contact resistance, relatively low formation temperature and low silicon consumption. Nickel is used in nickel-based rechargeable batteries and ferromagnetic random access memories (RAMs). Nickel(II) oxide is utilized as transistor gate-oxide and oxide in resistive RAMs. Atomic Layer Deposition (ALD) is a special type of Chemical Vapor Deposition (CVD) technique, that is used to deposit very smooth as well as homogeneous thin films with excellent conformality even at high aspect ratios. It is based on self-terminating sequential gas-solid reactions that allow a precise control of film thickness down to few Angstroms. In order to fabricate todays 3D electronic devices, technologies like ALD are required. In spite of huge number of practical applications of nickel and nickel(II) oxide, a few nickel precursors are available for thermal based ALD. Moreover, these precursors have resulted in poor film qualities and the process properties were also limited. Therefore in this master thesis, the properties of various novel nickel precursors had to be evaluated. All novel precursors are heteroleptic (different types of ligands) complexes and were specially designed by the manufacturer for thermal based ALD of pure nickel with H 2 as a co-reactant. In order to evaluate the novel precursors, a new methodology was designed to test small amounts (down to 2 g) of precursors in a very time efficient way. This methodology includes: TGA/DTA curve analyses of the precursors, thermal stability tests in which the precursors (< 0.1 g) were heated at elevated temperatures in a sealed environment for several hours, deposition experiments, and film characterizations. The depositions were monitored with the help of in situ quartz crystal microbalance, while application related film properties like chemical composition, physical phase, thickness, density, roughness and sheet resistance were investigated with the help of ex situ measurement techniques. Prior to the evaluation of novel nickel precursors, a benchmark ALD process was developed from the reference nickel precursor (Ni(amd)) and air as a co-reactant. The main goal of developing and optimizing such benchmark ALD process was to extract standard process parameters like second-reactant exposure times, Argon purge times, total process pressure, starting deposition temperature and gas flows. These standard process parameters had to be utilized to shorten the process development task (thus saving precursor consumption) and optimize the sublimation temperature for each novel precursor. The ALD behaviour was checked in terms of growth rate by varying the nickel precursor exposure time, precursor temperature and deposition temperature

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Ahmed, Mustafa M. Abdalla. "Alternating-Current Thin-Film Electroluminescent Device Characterization." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2008. http://www.nusl.cz/ntk/nusl-233432.

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Jádrem této disertační práce bylo studovat optické a elektrické charakteristiky tenkovrstvých elektroluminiscenčních součástek řízených střídavým proudem (ACTFEL) a zejména vliv procesu stárnutí luminiforů na jejich optické a elektrické vlastnosti. Cílem této studie měl být příspěvek ke zvýšení celkové účinnosti luminoforů, vyjádřené pomocí jasu, účinnosti a stability. Vzhledem k tomu, že současnou dominantní technologií plochých obrazovek je LCD, musí se další alternativní technologie plošných displejů porovnávat s LCD. Výhodou ACTFEL displejů proti LCD je lepší rozlišení, větší teplotní rozsah činnosti, větší čtecí úhel, či možnost čtení při mnohem vyšší intenzitě pozadí. Na druhou stranu je jejich nevýhodou vyšší energetická náročnost, problém s odpovídající barevností tří základních barev a podstatně vyšší napětí nutné pro činnost displeje. K dosažení tohoto cíle jsme provedli optická, elektrická a optoelektrická měření ACTFEL struktur a ZnS:Mn luminoforů. Navíc jsme studovali vliv dotování vrstvy pomocí KCl na chování mikrostruktury a na elektroluminiscenční vlastnosti (zejména na jas a světelnou účinnost) ZnS:Mn luminoforů. Provedli jsme i některá, ne zcela obvyklá, měření ACTFEL součástek. Vypočítali jsme i rozptylový poměr nabitých barevných center a simulovali transportní charakteristiky v ACTFEL součástkách. Studovali jsme vliv stárnutí dvou typů ZnS:Mn luminoforů (s vrstvou napařenou či získanou pomocí epitaxe atomových vrstev) monitorováním závislostí svítivost-napětí (L-V), velikost vnitřního náboje - elektrické pole luminoforu (Q-Fp) a kapacitance-napětí (C-V) ve zvolených časových intervalech v průběhu stárnutí. Provedli jsme krátkodobá i dlouhodobá měření a pokusili jsme se i o vizualizaci struktury luminoforu se subvlnovým rozlišením pomocí optického rastrovacího mikroskopu pracujícího v blízkém poli (SNOM). Na praktickém případu zeleného Zn2GeO4:Mn (2% Mn) ACTFEL displeje, pracujícího při 50 Hz, jsme také studovali stabilitu svítivosti pomocí měření závislosti svítivosti na napětí (L-V) a světelné účinnosti na napětí (eta-V). Přitom byl zhodnocen význam těchto charakteristik. Nezanedbatelnou a neoddělitelnou součástí této práce je i její pedagogický aspekt. Předložený text by mohl být využit i jako učebnice pro studenty na mé univerzitě v Lybii.

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Snyder, Ryan Daniel. "Combinatorial Analysis of Thermoelectric Materials using Pulsed Laser Deposition." University of Dayton / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1460037906.

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Books on the topic "Thin film layer analysis"

1

Bliznakovska, Blagica. Analysis methods and techniques for hard thin layer-coatings characterization: In particular on titanium nitride. Jülich: Forschungszentrum Jülich, 1993.

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Sloof, Willem Gerrit. Internal stresses and microstructure of layer/substrate assemblies: Analysis of TiC and TiN coatings chemically vapour deposited on various substrates. Delft, Netherlands: Delft University Press, 1996.

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Lessard, Victor R. Low speed analysis of mission adaptive flaps on a high speed civil transport configuration. Hampton, Va: National Aeronautics and Space Administration, Langley Research Center, 1999.

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Lessard, Victor R. Low speed analysis of mission adaptive flaps on a high speed civil transport configuration. Hampton, Va: National Aeronautics and Space Administration, Langley Research Center, 1999.

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Friedbacher, Gernot, and Henning Bubert, eds. Surface and Thin Film Analysis. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527636921.

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1957-, Hill Jo, ed. Thin-layer chromatography for binding media analysis. Los Angeles: Getty Conservation Institute, 1996.

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1945-, Bladt S., ed. Plant drug analysis: A thin layer chromatography atlas. 2nd ed. Berlin: Springer, 1996.

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Wagner, Hildebert. Plant drug analysis: A thin layer chromatography atlas. 2nd ed. Dordrecht: Springer, 2009.

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Wagner, Hildebert. Plant drug analysis: A thin layer chromatography atlas. 2nd ed. Dordrecht: Springer, 2009.

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Wagner, Hildebert. Plant drug analysis: A thin layer chromatography atlas. 2nd ed. Dordrecht: Springer, 2009.

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Book chapters on the topic "Thin film layer analysis"

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Arlinghaus, Heinrich F. "Laser Secondary Neutral Mass Spectrometry (Laser-SNMS)." In Surface and Thin Film Analysis, 179–89. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527636921.ch10.

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Hergenröder, Roland, and Michail Bolshov. "Surface Analysis by Laser Ablation." In Surface and Thin Film Analysis, 345–55. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2011. http://dx.doi.org/10.1002/9783527636921.ch21.

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Kataoka, Y., and T. Arai. "Basic Studies of Multi-Layer Thin Film Analysis using Fundamental Parameter Method." In Advances in X-Ray Analysis, 213–23. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4613-9996-4_24.

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Kaufmann, M., M. Mantler, and F. Weber. "Analysis of Multi-Layer Thin Films by XRF." In Advances in X-Ray Analysis, 205–12. Boston, MA: Springer US, 1994. http://dx.doi.org/10.1007/978-1-4615-2528-8_27.

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Kaufmann, M., M. Mantler, and F. Weber. "Analysis of Thin Films and Multi-Layer Thin Films containing Light Elements by XRF." In Advances in X-Ray Analysis, 701–6. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4615-5377-9_77.

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Sega, R., R. Lawconnell, R. Motes, T. Grycewicz, T. McNeil, and J. McNally. "Laser Ablation Analysis of 1-2-3 Material." In Science and Technology of Thin Film Superconductors, 53–59. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5658-5_7.

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Kataoka, Y., and T. Arai. "Application of Multi-Layer Thin Film Analysis by X-Ray Spectrometry using the Fundamental Parameter Method." In Advances in X-Ray Analysis, 225–35. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4613-9996-4_25.

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Chung, D. W., T. L. Peterson, R. Fletcher, P. M. Hemenger, I. Maartense, and P. T. Murray. "Electrical and Magnetic Analysis of YBa2Cu3O7−x Superconducting Films Grown by Laser Ablation." In Science and Technology of Thin Film Superconductors 2, 177–85. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-1345-8_27.

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Chaudhuri, J., and F. Hashmi. "Determination of Thickness of Multiple Layer Thin Films by X-ray Diffraction Technique." In Advances in X-Ray Analysis, 637–43. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4615-5377-9_69.

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Lee, Sang Soon, and Mi Hie Yi. "Analysis of Residual Stress in Thin Film Using Laser Scanning Method." In Advanced Nondestructive Evaluation I, 1377–80. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-412-x.1377.

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Conference papers on the topic "Thin film layer analysis"

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Kong, Weijin, Cuichun Ling, Maojin Yun, Xin Sun, Jianda Shao, and Zhengxiu Fan. "Rigorous coupled-wave analysis for the optical character of multi-layer dielectric thin film." In Sixth International Conference on Thin Film Physics and Applications. SPIE, 2008. http://dx.doi.org/10.1117/12.792248.

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Park, Jong-Jin, and Minoru Taya. "Design of Micro-Arrayed Thin Film Thermocouples (TFTC)." In ASME 2003 International Electronic Packaging Technical Conference and Exhibition. ASMEDC, 2003. http://dx.doi.org/10.1115/ipack2003-35040.

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We designed the thin film thermocouples (TFTC) made by T-type (Copper-Constantan) thermocouple arrays in order to measure temperature distribution at higher spatial resolutions. This sensor consists of a few different layers; silicon wafer, thin aluminum nitride (AlN) layer, and thin film thermocouple layers. The thickness of the thin aluminum nitride (AlN) layer is 100nm and the layer is located between silicon wafer and thin film thermocouples to construct an electrical insulator and thermal conductor. T-type (Copper-Constantan) thermocouples are deposited on the aluminum nitride (AlN) layer over the silicon wafer and the copper thickness and constantan thickness are 50nm, repectively. The sensor area is 10mm × 10mm, and has 10 × 10 junction arrays, and each junction has 100μm × 100μm surface area. According to the measured data, electrical resistivitives of thin films are almost 5 times greater than those of bulk materials. This is based on the comparison of thermal simulation and measured data of 1-D heat conduction in steady state. Seebeck coefficients between copper bulk material and constantan thin film are calculated and the weight factor is defined due to Seebeck coefficient mismatches of bulk materials and thin films. Thermal simulation of 2-dimensional heat conduction in steady state calculated by finite element analysis and compared with the measured data, resulting in a good agreement between simulations and measured data.

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Yung, Lai Chin, Kunjupant Mugunan, and Cheong Choke Fei. "FIB with EDX analysis use for thin film contamination layer inspection." In 2013 IEEE Regional Symposium on Micro and Nanoelectronics (RSM). IEEE, 2013. http://dx.doi.org/10.1109/rsm.2013.6706554.

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Faisal, Sakib, Sheikh Ifatur Rahman, Sarwar Ahmed, and Tanvir Islam Dhrubo. "Numerical analysis of MoTe2 thin film solar cell with Cu2Te BSF layer." In TENCON 2017 - 2017 IEEE Region 10 Conference. IEEE, 2017. http://dx.doi.org/10.1109/tencon.2017.8228252.

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Rahman, Mohammad Wahidur, Shafayat Naznoor Ahmed, Sheikh Ifatur Rahman, and Md Ashraful Hoque. "Numerical analysis of CdTe thin film solar cells with CdS:O window layer and ZnO buffer layer." In 2016 International Conference on Advances in Electrical, Electronic and Systems Engineering (ICAEES). IEEE, 2016. http://dx.doi.org/10.1109/icaees.2016.7888079.

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Rahman, Mohammad Wahidur, Sheikh Ifatur Rahman, Shafayat Naznoor Ahmed, and Md Ashraful Hoque. "Numerical analysis of CdS:O/CdTe thin film solar cell using Cu2Te BSF layer." In 2016 9th International Conference on Electrical and Computer Engineering (ICECE). IEEE, 2016. http://dx.doi.org/10.1109/icece.2016.7853910.

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Teh, Y. C., N. R. Ong, Z. Sauli, J. B. Alcain, and V. Retnasamy. "Barium strontium titanate (BST) thin film analysis on different layer and annealing temperature." In 3RD ELECTRONIC AND GREEN MATERIALS INTERNATIONAL CONFERENCE 2017 (EGM 2017). Author(s), 2017. http://dx.doi.org/10.1063/1.5002484.

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Shao, Yuchen, Yuan'an Zhao, Hao Ma, Cheng Li, Dawei Li, and Jianda Shao. "Efficient method for determination of laser conditions adopted in laser-induced micro-lithology based on laser polymerization size analysis." In Tenth International Conference on Thin Film Physics and Applications (TFPA 2019), edited by Junhao Chu and Jianda Shao. SPIE, 2019. http://dx.doi.org/10.1117/12.2539750.

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Imatani, Shoji, Ek-u. Thammakornbunjut, Theodore E. Simos, George Psihoyios, and Ch Tsitouras. "Thermo-mechanical Response and Onset of Instability of Thin Film Layer Due to Thermal Loading." In ICNAAM 2010: International Conference of Numerical Analysis and Applied Mathematics 2010. AIP, 2010. http://dx.doi.org/10.1063/1.3498476.

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Walter, J., W. Mack, C. Y. Lee, and C. Gspan. "Correlation of Thin Film Measurement Techniques for Device Packaging Processes." In ISTFA 2014. ASM International, 2014. http://dx.doi.org/10.31399/asm.cp.istfa2014p0172.

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Abstract The analysis of thin layers in semiconductor components represents a central point in the quality control of semiconductor companies. Not only to control production processes, but to successfully operate also reverse engineering, reliable thin-film measurement methods are essential. In this work, non-destructive thin film EDX (energy dispersive X-ray micro analysis) software and μXRF (micro x-ray fluorescence analysis) were compared with TEM analysis. These methods ensure a high lateral resolution which is essential in the analysis of semiconductor structures. As an example, four different, for the semiconductor industry interesting, very thin coating systems in the nanometer range have been tested. In the individual cases best TEM detector contrast settings could be found, as well as optimum fluorescence lines settings on the EDX to minimize the errors. The TEM measurements, in thickness and composition, were compared to the thin film EDX software and the μXRF method results to determine their accuracy. It turns out that depending on the layer system recalibration with multilayer standards or at least with elemental standards is recommended. It could be shown that with μXRF and thin film EDX a reliable, rapid and non-destructive layer analysis is possible.

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Reports on the topic "Thin film layer analysis"

1

Pike, Christopher. Building a Better Capacitor with Thin-Film Atomic Layer Deposition Processing. Office of Scientific and Technical Information (OSTI), August 2015. http://dx.doi.org/10.2172/1213126.

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Stoffer, James, George D. Weddill, Thomas O'Keefe, Richard Brow, and Matt O'Keefe. Acquisition of Surface/Thin Film Analysis System. Fort Belvoir, VA: Defense Technical Information Center, January 2002. http://dx.doi.org/10.21236/ada402919.

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Collins, W. E., and B. Rambabu. Experimental thin film deposition and surface analysis techniques. Office of Scientific and Technical Information (OSTI), January 1986. http://dx.doi.org/10.2172/5705694.

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Nastasi, M. Ion beam analysis and modification of thin-film, high-temperature superconductors. Office of Scientific and Technical Information (OSTI), October 1989. http://dx.doi.org/10.2172/5658129.

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Jones, L. Ruthenium-Platinum Thin Film Analysis Using Grazing Incidence X-ray Diffraction. Office of Scientific and Technical Information (OSTI), September 2004. http://dx.doi.org/10.2172/833117.

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MacAlpine, Sara, Michael Deceglie, Sarah Kurtz, Birinchi Bora, O. S. Sastry, Yogesh Kumar Singh, Rashmi Singh, and Supriya Rai. Analysis of a Single Year of Performance Data for Thin Film Modules Deployed at NREL and NISE. Office of Scientific and Technical Information (OSTI), August 2016. http://dx.doi.org/10.2172/1313608.

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Zhu, Jianzhong. New development of laser-based techniques in applications of thin-layer chromatography, microprobe elemental analysis and gas phase pyrolysis. Office of Scientific and Technical Information (OSTI), January 1990. http://dx.doi.org/10.2172/7121607.

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Whipple, R. Field Analysis of Propellant Stabilizers and their Daughter Products in any Propellant Formulation by Thin-Layer Chromatography Year End Report 2003. Office of Scientific and Technical Information (OSTI), December 2003. http://dx.doi.org/10.2172/15009754.

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Toney, Michael F., and Maikel F. A. M. van Hest. In-situ X-Ray Analysis of Rapid Thermal Processing for Thin-Film Solar Cells: Closing the Gap between Production and Laboratory Efficiency. Office of Scientific and Technical Information (OSTI), February 2017. http://dx.doi.org/10.2172/1395583.

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Berney, Ernest, Andrew Ward, and Naveen Ganesh. First generation automated assessment of airfield damage using LiDAR point clouds. Engineer Research and Development Center (U.S.), March 2021. http://dx.doi.org/10.21079/11681/40042.

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This research developed an automated software technique for identifying type, size, and location of man-made airfield damage including craters, spalls, and camouflets from a digitized three-dimensional point cloud of the airfield surface. Point clouds were initially generated from Light Detection and Ranging (LiDAR) sensors mounted on elevated lifts to simulate aerial data collection and, later, an actual unmanned aerial system. LiDAR data provided a high-resolution, globally positioned, and dimensionally scaled point cloud exported in a LAS file format that was automatically retrieved and processed using volumetric detection algorithms developed in the MATLAB software environment. Developed MATLAB algorithms used a three-stage filling technique to identify the boundaries of craters first, then spalls, then camouflets, and scaled their sizes based on the greatest pointwise extents. All pavement damages and their locations were saved as shapefiles and uploaded into the GeoExPT processing environment for visualization and quality control. This technique requires no user input between data collection and GeoExPT visualization, allowing for a completely automated software analysis with all filters and data processing hidden from the user.

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