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Epitaxial BaRuO3 (BRO) and CaRuO3 (CRO) thin films were prepared on (001), (110) and (111) SrTiO3 (STO) single-crystal substrates by laser ablation, and their microstructures and anisotropy of electrical conductivity were investigated. The (205) (104), (110) and (009) oriented BRO thin films, and (001), (110) and (110) oriented CRO thin films were grown epitaxially on (001), (110) and (111) STO substrates with in-plain orientation, respectively. The (009) BRO thin film and (001) CRO thin film has a flat surface result from a good lattice matching to STO substrates. The (205) (104) BRO thin film and (111) CRO thin film exhibited orthogonal- and hexagonal-shaped texture, respectively. The (110) BRO thin film and (110) CRO thin film showed an island growth due to (110) surface feature of cubic perovskite structure. Epitaxial BRO and CRO thin films have a high electrical conductivity with a metallic conduction, the (111) CRO thin films exhibited the highest conductivity of 1.4×105 S·m-1.
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Seifert, Andreas, Fred F. Lange, and James S. Speck. "Epitaxial growth of PbTiO3 thin films on (001) SrTiO3 from solution precursors." Journal of Materials Research 10, no. 3 (March 1995): 680–91. http://dx.doi.org/10.1557/jmr.1995.0680.
A mixed alkoxide liquid precursor was used to form epitaxial PbTiO3 thin films by spin-coating on cubic (001) SrTiO3 substrates. The films were heat-treated at temperatures between 380 °C/1 h and 800 °C/1 h. X-ray diffraction, atomic force microscopy, scanning and transmission electron microscopy were used to characterize the microstructure of the films and to evaluate the epitaxial phenomena. At ∼400 °C/1 h, a polycrystalline, metastable Pb-Ti fluorite crystallizes from the pyrolyzed amorphous precursor. At slightly higher temperatures (∼420 °C/1 h), the thermodynamically stable phase with the perovskite structure epitaxially nucleates at the film/substrate interface. A small number of epitaxial grains grow through the film toward the surface and consume the nanocrystalline fluorite grains. Coarsening of the perovskite grains leads to a reduction in mosaic spread during further heating. Pores, which concurrently coarsen with grain growth, produce a pitted surface as they disappear from within the film. At 800 °C/1 ha dense epitaxial PbTiO3 film with a smooth surface is observed. Parameters governing the formation of a- and c-domains are discussed as well as the small tilts of the domain axes away from the substrate normal.
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Miyake, A., H. Kominami, T. Aoki, H. Tatsuoka, H. Kuwabara, Y. Nkanishi, and Y. Hatanaka. "Growth of epitaxial ZnO thin film by oxidation of epitaxial ZnS thin films on Si(111)." International Journal of Modern Physics B 15, no. 28n30 (December 10, 2001): 3861–64. http://dx.doi.org/10.1142/s0217979201008858.
The growth of epitaxial ZnO thin film on Si substrate by the oxidation of epitaxial ZnS film is a novel method and we are reporting this first time. The merits of the use of Si substrate are to make driving voltage in LED lower and less expensive than sapphire substrate. In this study, the epitaxial ZnO thin film could be successfully grown on the Si substrate. The epitaxial films showed a strong near ultraviolet emission peaked at around 3.32 eV at room temperature under 325 nm excitation.
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Tamaki, Jun, Gregory K. L. Goh, and Fred F. Lange. "Novel epitaxial growth of barium titanate thin films by electrodeposition." Journal of Materials Research 15, no. 12 (December 2000): 2583–86. http://dx.doi.org/10.1557/jmr.2000.0368.
Electrodeposition was used to grow epitaxially BaTiO3 thin films on SrTiO3 single-crystal substrates with La0.7Sr0.3MnO3 (LSMO) conducting buffer layers. The epitaxial films appeared to consist of very small (ø10 nm) particles. The film completely covered the substrate when the reaction was performed at temperatures between 60 and 90 °C with LSMO potentials of –0.5 to –1.0 V against a Pt counter-electrode. It appeared that an electrophoretic force, acting on BaTiO3 nuclei within the solution, facilitated the deposition of the film.
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DeNatale, J. F., and P. H. Kobrin. "Lattice distortion effects on electrical switching in epitaxial thin film NdNiO3." Journal of Materials Research 10, no. 12 (December 1995): 2992–95. http://dx.doi.org/10.1557/jmr.1995.2992.
Crystalline thin films of NdNiO3 have been epitaxially grown on the (100) face of single-crystal LaAlO3 substrates. These films exhibit the characteristic reversible change in electrical conductivity with temperature previously observed in bulk polycrystalline material. The temperature of the electrical transition in the epitaxial thin films was lower than reported for the bulk polycrystalline ceramics. This effect is attributed to lattice strains associated with the film processing and interfacial lattice matching constraints.
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Sasi, Krishnaprasad, Sebastian Mailadil, Fredy Rojas, Aldrin Antony, and Jayaraj Madambi. "Buffer Assisted Epitaxial Growth of Bi1.5Zn1Nb1.5O7 Thin Films by Pulsed Laser Deposition for Optoelectronic Applications." MRS Proceedings 1454 (2012): 183–88. http://dx.doi.org/10.1557/opl.2012.1264.
ABSTRACTBi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were prepared on Al2O3with a double ZnO buffer layer by pulsed laser deposition. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The sharp intense spots in the SAED pattern also indicates the highly crystalline nature of BZN thin film. The electrical properties of the as deposited thin films were investigated by patterning an inter digital capacitor (IDC) structure on BZN. A high tunability was observed in this epitaxially grown thin films.
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Miller, Dean J., Jeffrey D. Hettinger, Ronald P. Chiarello, and Hyung K. Kim. "Epitaxial growth of Cu2O films on MgO by sputtering." Journal of Materials Research 7, no. 10 (October 1992): 2828–32. http://dx.doi.org/10.1557/jmr.1992.2828.
The epitaxial growth of Cu2O films is of significant interest for the unique potential they offer in the development of multilayer devices and superlattices. While fundamental studies may be carried out on epitaxial films prepared by any technique, the growth of artificially layered superlattices requires that films grow epitaxially during deposition. The present study examined the growth of Cu2O on MgO substrates directly during deposition by sputtering. Although epitaxial thin films of Cu2O could be produced, a mosaic structure was observed. The structure of the film may be related to the growth mechanism in which islands coalesce to form a continuous film.
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Jiang, J. C., X. Q. Pan, Q. Gan, and C. B. Eom. "Domain Structure of Epitaxial SrRuO3 Thin Films on (001) LaA1O3." Microscopy and Microanalysis 4, S2 (July 1998): 578–79. http://dx.doi.org/10.1017/s1431927600023011.
Epitaxial thin film of SrRuO3 is very useful in device applications, due to its important electrical and magnetic properties. For example, (Pb,Zr)TiO3 ferroelectric capacitors with SrRuO3 thin film electrodes exhibit superior fatigue and leakage characteristics. Epitaxial SrRuO3 thin films grown on different substrates, such as on (001) SrTiO3 and (001) LaA1O3, have different magnetic properties, owing to the different microstructures in the film. Microstructures in epitaxial SrRuO3 thin films grown on (001) SrTiO3 have been studied in our previously work. In this paper, microstructure of epitaxial SrRu03 thin films grown on (001) LaA103 is reported.SrRuO3 thin films on (001) LaA1O3 were deposited by 90° off-axis sputtering. For cross-section TEM studies the SrRuO3/LaA1O3 heterostructural samples were cut along the [100] direction of LaA103. The cut slides were glued face-to-face by joining the SrRu03 surfaces. Plan-view and cross-section TEM specimens were prepared by mechanical grinding, polishing and dimpling, followed by Ar-ion milling.
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Wasa, Kiyotaka, Toshifumi Satoh, Kenji Tabata, Hideaki Adachi, Yasumufi Yabuuchi, and Kentaro Setune. "Effects of PLT-buffer layer on microstructures of sputtered PLZT thin films epitaxially grown on sapphire." Journal of Materials Research 9, no. 11 (November 1994): 2959–67. http://dx.doi.org/10.1557/jmr.1994.2959.
The microstructures of sputtered thin films of lead-lanthanum zirconate-titanate (PLZT) on (0001) sapphire substrate have been studied using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Thin films of polycrystalline PLZT (9/65/35), Pb0.91La0.09Zr0.65Ti0.35O3, were prepared on a (0001) sapphire substrate by reactive sputtering, using the dc-magnetron system with a multitarget, Pb, La, Zr, and Ti at the substrate temperature of 700 °C. The PLZT thin films comprised (111) oriented small crystallites of PLZT. Although the average direction of the crystal orientation corresponded to the ideal epitaxial relationship (111) PLZT ‖ (0001) sapphire, the individual crystallites showed misalignment in both the growth direction and the film plane. The thin films could not be considered epitaxially grown films. From analysis of the TEM images, there exists an interfacial region between the PLZT thin film and the substrate. The interfacial region comprises ordered clusters of (111), disordered (101), and/or (110) PLZT crystallites. The presence of the interfacial region will suppress ideal epitaxial growth with uniform crystal orientation. It is confirmed that the addition of the buffer layer of graded composition of PLT-PLZT, between the substrate and the PLZT thin film, will suppress the formation of the disordered interfacial region and will enhance the epitaxial growth of the (111) PLZT on (0001) sapphire with three-dimensional crystal orientations.
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Kim, J. H., and F. F. Lange. "Seeded Epitaxial Growth of PbTiO3 Thin Films on (001) LaAlO3 using the Chemical Solution Deposition Method." Journal of Materials Research 14, no. 4 (April 1999): 1626–33. http://dx.doi.org/10.1557/jmr.1999.0218.
Epitaxial PbTiO3 (PTO) thin films were grown on (001) LaAlO3 (LAO) substrates by a preseeded, two-step process via spin coating a Pb–Ti double alkoxide precursor solution. In the first step, a substrate was preseeded with epitaxial islands of PTO by coating the substrate with a very thin layer of the precursor solution and heat treating to 800 °C for 1 h. The isolated islands had an epitaxial orientation relationship of [100] (001)PTO || [100] (001)LAO. In the second step, another PTO thin film was deposited by spin coating to produce an epitaxial film via grain growth from the seeded islands. The sequence of epitaxy during heating between 400 and 800 °C was characterized by x-ray diffraction, scanning electron microscopy, atomic force microscopy, and transmission electron microscopy (TEM). This sequence was compared to the case where the LAO substrate was not seeded. Regardless of whether the substrate was seeded or not, perovskite PTO grains nucleated and grew within the pyrolyzed, amorphous film. Films grown on the unseeded substrates were, at best, only highly textured, polycrystalline films. TEM observations showed that only a low number of epitaxial nuclei formed at the substrate/film interface due, apparently, to the large strain energy associated with the large lattice mismatch (~4%) between PTO and LAO. Other, unoriented, PTO grains that nucleated within the amorphous film were not consumed as the epitaxial grains grew larger with increasing temperature. On the other hand, good epitaxial films could be produced when the number density of epitaxial nuclei was increased by first forming a seeded substrate.
The application of the metalorganic chemical vapour deposition technique to the production of II-VI compound semiconductor electroluminescent devices is discussed. Both low field MIS minority carrier injection devices and high field impact excitation structures are considered, and comparisons are drawn with more commiercially orientated electroluminescent displays. The epitaxial growth of ZnS and ZnSe onto (100) orientated GaAs substrates, using the reactions between dimethyl zinc and the hydrides HgS and H2Se, is described. Details are given of a novel epitaxial MISi device processing technology, in which a ZnS I-layer also acts as an etch-stop, thus enabling chemical removal of the GaAs substrate. Metal electrodes deposited directly onto the ZnS and ZnSe allow the electrical and electroluminescent characteristics of these epitaxial II-VI compound layers to be investigated in the absence of any influence from the substrate material. X-ray diffraction and reflection high energy electron dififraction confirm that the structures are epitaxial and of excellent crystallinity. It is demonstrated in an electron beam induced current study that conduction in the epitaxial MIS devices is highly uniform, and this is manifested in a uniform spatial distribution of electroluminescence. A description is given of high field impact excitation electroluminescent devices, in which the ZnS layer is doped with manganese during MOCVD growth. The spatial distribution of EL in these devices is shown to be non-uniform, and thus indicative of filamentary conduction in the ZnS:Mn, in accordance with a recently proposed dielectric breakdown model of instability. It is demonstrated that the transient characteristics of the epitaxial structures correlate with those of commercial polycrystalline devices, and are also consistent with the predictions of a dynamic model of instability. As a result of filamentary conduction, both epitaxial and polycrystalline devices are prone to degradation through localised dielectric breakdown. These breakdown events generally result in a gradual erosion of the active electrode area, although, under certain operating conditions, mobile filaments can cause rapid destruction of epitaxial structures. The columnar microstructure of sputtered devices appears to prevent such filament mobility, and it is concluded that, although filamentary conduction is a result of the carrier injection mechanism and is independent of the crystallinity, the associated damage is strongly influenced by the microstructure of the device.
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Borovikov, Valery. "Multi-scale simulations of thin-film metal epitaxial growth /." Connect to full text in OhioLINK ETD Center, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1216928358.
Wang, Chao-Hsiung. "The growth of thin film epitaxial oxide-metal heterostructures." Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368667.
Borovikov, Valery V. "Multi-scale Simulations of Thin-Film Metal Epitaxial Growth." University of Toledo / OhioLINK, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1216928358.
Schoofs, Frank. "Defect-induced magnetism and transport phenomena in epitaxial oxides." Thesis, University of Cambridge, 2012. https://www.repository.cam.ac.uk/handle/1810/243639.
This work focuses on the impact of defects, intrinsic or artificially introduced, on the functional properties of thin, epitaxial oxide films. In the first part, the origin of the ferromagnetic properties of Mn-doped and undoped zinc oxide is studied. The deposition conditions are found to have a significant impact on the structural, transport and magnetic properties of the thin films. Combining x-ray magnetic circular dichroism and magnetometry experiments, it is established that the transition metal dopants (i.e. Mn) have no influence on the ferromagnetic nature of the zinc oxide, but that localised magnetic moments on intrinsic defects are in fact responsible for the ferromagnetic behaviour. A relation between strain (related to defect concentration) and magnetisation is established. In the second part of this dissertation, artificially introduced defects are employed in order to discover the fundamental conduction mechanism behind the two-dimensionally conductive LaAlO3/SrTiO3 interface. All experiments, from varying deposition temperature, to oxygen pressure, to laser fluence or to the insertion of (doped) perovskite layers, point towards a structurally governed conduction mechanism, although the exact details are still unclear. Distinct transitions in the resistance versus temperature curves are observed at different values than the bulk phase transformation temperature. These transitions form the boundaries of different conduction modes, with tendencies towards non-Fermi-liquid behaviour observed in certain two-dimensionally conducting samples in limited temperature regimes. By optimising the (defect) structure at the interface, i.e. by introducing a single unit cell of (La0.5,Sr0.5)TiO3 or SnTiO3, it is shown that the sheet carrier density can be dramatically enhanced, up to an order of magnitude higher than unmodified LaAlO3/SrTiO3 interfaces with a value of 1e14 cm−2 at 200 K. Finally, attempts at functionalising the conductive heterointerface by doping and inserting (anti)ferromagnetic layers are made.
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Cao, Jing. "Growth, characterization and measurement of epitaxial Sr2RuO4 thin films." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/274542.
In this thesis, the growth of c-axis oriented Sr2RuO4 thin films using pulsed laser deposition and their electrical transport properties are systematically discussed. The deposition and optimization process involved several progressive steps. Specifically, the first focus was on the Sr2RuO4 phase optimization in films grown on lattice-matched (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 (LSAT) substrates. Film composition was found to be greatly influenced by changes in oxygen pressure, substrate temperature, target to substrate distance, and laser fluence. High oxygen pressure, low substrate temperature, large target to substrate distance, and high laser fluence increased the tendency to form the Ru-rich SrRuO3 phase in the film. The second focus was on improving the electrical transport properties of Sr2RuO4 from metal-insulating to fully metallic and eventually to superconducting behavior. It was observed that the full width at half maximum (FWHM) of the Sr2RuO4 (006) rocking curves in x-ray diffraction (XRD) scan was related to the quality of the electrical transport response. By fine tuning the deposition parameters to obtain low FWHM values, the electrical transport behavior of the Sr2RuO4 thin films was consistently improved from metal-insulating to fully metallic. In addition, localized superconductivity with enhanced superconducting transition temperature Tc onset was also observed among the fully metallic film. An in-depth study of the XRD results in fully metallic films indicated the existence of defects (intergrowths) along the c-axis direction, which caused localized c-axis tensile strain. The existence of structural defects within the film was likely to be responsible for the fact that only localized superconductivity was observed in the films. Furthermore, the enhanced superconducting transition temperature (Tc) relative to bulk single crystals is likely to be associated to localized strain in the film. Finally, Nb doped SrTiO3 substrates were used to achieve better quality growth of partial superconducting Sr2RuO4 thin films. Sr2RuO4 films grown on Nb doped SrTiO3 substrates had smaller FWHM values and lower level of c-axis tensile strain compared to those on LSAT substrates. Various partially superconducting films with different thicknesses and different superconducting Tc values are presented, and correlations between fabrication process, film crystalline quality as well as transport properties are discussed. This work provides better understanding of the importance of maximizing crystalline quality by delicate fine tuning of PLD deposition parameters to achieve high quality superconducting films.
Magnetoelectricity (ME) is a physical property that results from an exchange between polar (electric dipole) and spin (magnetic dipole) subsystem: i.e., a change in polarization (P) with application of magnetic field (H), or a change in magnetization (M) with applied electric field (E). Magnetoelectricity can be found both in single phase and composite materials. Compared with single phase multiferroic materials, composite multiferroics have higher ME effects. Through a strictive interaction between the piezoelectricity of the ferroelectric phase and the magnetostriction of the ferromagnetic phase, said multiferroic composites are capable of producing relatively large ME coefficients.
This Dissertation focused on the deposition and characterization of two-phase composite magnetoelectric thin films. First, single phase ferroelectric thin films were studied to improve the multiferroic properties of the composite thin films. Then structural, ferroelectric, ferromagnetic, and magnetoelectric properties of composite thin films were researched. Finally, regular nano-array composite films were deposited and characterized.
First, for single phase ferroelectric thin films, the phase stability was controlled by epitaxial engineering. Because ferroelectric properties are strongly related to their crystal structure, it is necessary to study the crystal structures in single phase ferroelectric thin films. Through constraint of the substrates, the phase stability of the ferroelectric thin films were able to be altered. Epitaxial thin-layers of Pb(Fe1/2Nb1/2)O3 (or PFN) grown on (001), (110), and (111) SrTiO3 substrates are tetragonal, orthorhombic, and rhombohedral respectively. The larger constraint stress induces higher piezoelectric constants in tetragonal PFN thin film. Epitaxial thin-layers of Pb(Zr0.52Ti0.48)O3 (or PZT) grown on (001), (110), and (111) SrTiO3 substrates are tetragonal, monoclinic C, and rhombohedral respectively. Enhanced ferroelectric properties were found in the low symmetry monoclinic phase. A triclinic phase in BFO was observed when it was deposited on tilted (001) STO substrates by selecting low symmetry (or interim) orientations of single crystal substrates.
Then, in two phase composite magnetoelectric thin films, the morphology stability was controlled by epitaxial engineering. Because multiferroic properties are strongly related to the nano-structures of the composite thin films, it is necessary to research the nano-structures in composite thin films. Nano-belt structures were observed in both BaTiO3-CoFe2O4 and BiFeO3-CoFe2O4 systems: by changing the orientation of substrates or annealing condition, the nano-pillar structure could be changed into nano-belts structure. By doing so, the anisotropy of ferromagnetic properties changes accordingly. The multi-ferroic properties and magnetoelectric properties or (001), (110) and (111) self-assembled BiFeO3-CoFe2O4 nano-composite thin film were also measured.
Finally, the regular CoFe2O4-BiFeO3 nano-array composite was deposited by pulsed laser deposition patterned using a focused ion beam. Top and cross-section views of the composite thin film showed an ordered CoFe2O4 nano-array embedded in a BiFeO3 matrix. Multiferroic and magnetoelectric properties were measured by piezoresponse force microscopy and magnetic force microscopy. Results show (i) switching of the magnetization in ferromagnetic CoFe2O4 and of the polarization in ferroelectric BiFeO3 phases under external magnetic and electric field respectively, and (ii) changes of the magnetization of CoFe2O4 by applying an electric field to the BiFeO3 phase. Ph. D.
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Nutariya, Jeerapat. "Epitaxial thin film growth of Pt assisted by underpotential deposition phenomena." Thesis, University of Bristol, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.616569.
Fuel cells as green and sustainable energy sources are at the heart of future Hydrogen Economy. Current research is focused on creating highly active, stable and low content Pt catalysts to improve fuel cell performance up to standards suitable for commercialization. The development of bimetallic Pt structures is the most promising route for achieving this goal. Besides the lower-noble metal content, combination of Pt with other metal at the nano-scale .can result in enhancement of catalytic activity due to the combination of geometric and electronic effects. The main aim of this work is the development of a surface limited redox replacement (SLRR) protocol for the design of epitaxial Pt-films with atomic scale control of the structure. SLRR exploits underpotentially deposited (UPD) layer as sacrificial layer that is replaced by more-noble Pt through a surface-controlled limited red-ox (galvanic) reaction. Different from previously developed SLRR protocols this work explores the one-cell configuration setup as an alternative to improve the efficiency and quality of the growth. The conditions for growth have been optimized and monitored with automated control of the SLRR cycles. The successful growth of Pt films on Au has been demonstrated for SLRR growth via Pb UPD. The electrochemical characterisation showed that using Pb UPD as sacrificial layer produces epitaxial Pt films of high quality with no significant roughness evolution up to 10 layers. Scanning tunnelling microscopy (STM) examination of the morphology has shown that Pt was deposited in clusters of 5-10 nm size, homogeneously and uniformly distributed over the surface. Electrochemical quartz crystal microbalance (EQCM) showed high deposition , yield and the Pt(II):Pb replacement stoichiomentric ratio higher than expected 1 : 1, suggesting an extra reduction power present in the system. The compositional analysis of Pt layers grown by SLRR suggests incorporation of minimum 4 at% of Pb. The SLRR protocol for the homoepitaxial growth of Pt thin films using adsorbed H i.e. under potentially deposited H (H-UPD) has been developed. This work presents first application of the SLRR protocol using a nonmetal UPD system. EQCM experiments demonstrated steady displacement kinetics and a yield equal to the expected stoichiometric Pt(II):H exchange ratio (1 :2). Electrochemical and STM characterization of Pt films showed that the growth via SLRR of H-UPD results in increase of the surface roughness with the number of replacement steps. The roughness of SLRR deposited Pt films has been compared with films grown in the same solution at two constant overpotentials: with and without adsorbed H floating on the surface. The results showed clear advantages of using . the SLRR of H-UPD approach which generated films with two times lower roughness and better quality then the ones grown potentiostatically. The generality of the SLRR approach using H-UPD is validated by growth of Pt films on Pd ultrathin films on Au. The Pt films of well-defined thickness and structure grown by SLRR of Pb UPD have been used in a fundamental study of Pt dissolution during formic acid oxidation (FAO). A quantitative analysis of long term durability tests of Pt films has been conducted by potential cycling over an extended potential range. Direct proportionality between overall life and thickness of the catalyst has been observed. The characteristic stages of the activity decay were correlated with the characteristic electrochemical behaviour during FAO and the surface morphology examined by the atomic force microscopy. An average Pt dissolution rate of 1.90±O.33 ng.cm-2.cycle-1 has been determined during FAO which . was almost four times faster than the rate under the same conditions in the background solution. This study suggests that Pt dissolution mechanism during FAO is influenced in by reaction intermediates and processes on the surface.
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Kadhim, N. J. "Morphological imperfections associated with molecular beam epitaxial growth of GaAs layers." Thesis, University of Hertfordshire, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.377702.
Amiri-Hezaveh, A. "Photelectron spectroscopy of ultra-thin epitaxial f.c.c. magnetic films of iron and cobalt." Thesis, University of Cambridge, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233668.
Symposium B on Epitaxial Thin Film Growth and Nanostructures (1997 Strasbourg, France). Recent developments in thin film research: Epitaxial growth and nanostructures, electron microscopy, and x-ray diffraction : proceedings of Symposium B on Epitaxial Thin Film Growth and Nanostructures and proceedings of Symposium C on Recent Developments in Electron Microscopy and X-Ray Diffraction of Thin Film Structures of the 1997 ICAM/E-MRS Spring Conference, Strasbourg, France, June 16-20, 1997. Edited by Ritter G and Symposium C on Recent Developments in Electron Microscopy and X-Ray Diffraction of Thin Film Structures (1997 : Strasbourg, France). Amsterdam: Elsevier, 1997.
Fla.) Epitaxial Growth of Functional Oxides Symposium (2003 Orlando. Epitaxial growth of functional oxides: Proceedings of the international symposium. Edited by Goyal A. (Amit), Electrochemical Society Electronics Division, Electrochemical Society. Dielectric Science and Technology Division, and Electrochemical Society Meeting. Pennington, N.J: Electrochemical Society, 2005.
T, Wille Luc, ed. Mechanisms and principles of epitaxial growth in metallic systems: Symposium held April 13-14, 1998, San Francisco, California, U.S.A. Warrendale, Pa: Materials Research Society, 1998.
Albert-Laszló, Barabási, and Krishnamurthy Mohan, eds. Epitaxial growth: Principles and applications symposium held April 5-8, 1999, San Francisco, California, U.S.A. Warrendale, PA: Materials Research Society, 1999.
G, Schlom Darrell, ed. Epitaxial oxide thin films III: Symposium held March 31-April 2, 1997, San Francisco, California, U.S.A. Pittsburgh, Pa: Materials Research Society, 1997.
K, Fork David, ed. Epitaxial oxide thin films and heterostructures: Symposium held April 5-7, 1994, San Francisco, California, USA. Pittsburgh, PA: Materials Research Society, 1994.
Book chapters on the topic "Thin film, epitaxial":
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Sato, Y., H. Fujita, T. Ando, T. Tanaka, and M. Kamo. "Local epitaxial growth of diamond on nickel from the vapour phase." In Thin Film Diamond, 55–61. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-0725-9_4.
Fichthorn, Kristen A., Michael L. Merrick, Rossitza Pentcheva, and Matthias Scheffler. "Island Nucleation in Metal Thin-Film Growth." In Atomistic Aspects of Epitaxial Growth, 87–97. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0391-9_8.
Roytburd, Alexander L. "Elastic Domains in Ferroelectric Epitaxial Films." In Thin Film Ferroelectric Materials and Devices, 71–90. Boston, MA: Springer US, 1997. http://dx.doi.org/10.1007/978-1-4615-6185-9_3.
Poortmans, Jef. "Epitaxial Thin Film Crystalline Silicon Solar Cells on Low Cost Silicon Carriers." In Thin Film Solar Cells, 1–38. Chichester, UK: John Wiley & Sons, Ltd, 2006. http://dx.doi.org/10.1002/0470091282.ch1.
Mele, A., A. Giardini, and R. Teghil. "Thin Film Epitaxial Growth by Laser Ablation." In Frontiers in Nanoscale Science of Micron/Submicron Devices, 67–83. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-1778-1_7.
Akiyama, Toru. "Novel Behaviors Related to III-Nitride Thin Film Growth." In Epitaxial Growth of III-Nitride Compounds, 185–218. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-76641-6_10.
Kotomin, E. A., Yu Zhukovskii, S. Dorfman, and D. Fuks. "Atomistic Theory of the Growth Mode for a Thin Metallic Film on an Isulating Substrate." In Atomistic Aspects of Epitaxial Growth, 525–34. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0391-9_41.
Soltner, H., B. Kabius, C. L. Jia, P. Prieto, U. Poppe, J. Schubert, and Ch Buchal. "Properties of Epitaxial YBa2Cu3O7/PrBa2Cu3O7 Heterostructures Sputtered at High Oxygen Pressures." In Science and Technology of Thin Film Superconductors 2, 11. Boston, MA: Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-1345-8_2.
Matsuura, Takashi, and Hideo Itozaki. "Jc Derived from Pinning Potential on Epitaxial YBCO Thin Film." In Advances in Superconductivity IV, 365–68. Tokyo: Springer Japan, 1992. http://dx.doi.org/10.1007/978-4-431-68195-3_76.
Bauhuis, G. J., P. Mulder, and J. J. Schermer. "Thin-Film III–V Solar Cells Using Epitaxial Lift-Off." In High-Efficiency Solar Cells, 623–43. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-01988-8_21.
Conference papers on the topic "Thin film, epitaxial":
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Falco, Charles M., James Eickmann, Judith A. Ruffner, and Jon M. Slaughter. "Growth and surface structure of epitaxial Be thin films." In Thin Film Physics and Applications: Second International Conference, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1994. http://dx.doi.org/10.1117/12.190777.
Yang, Guozhen, Huibin Lu, T. Zhao, Fan Chen, and Zhenghao Chen. "Epitaxial growth and characterization of oxide thin films." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408479.
Miyake, A., H. Kominami, T. Aoki, H. Tatsuoka, H. Kuwabara, Y. Nkanishi, and Y. Hatanaka. "Growth of epitaxial ZnO thin film by oxidation of epitaxial ZnS thin film on Si(111)." In Proceedings of 2000 International Conference. WORLD SCIENTIFIC, 2001. http://dx.doi.org/10.1142/9789812811387_0069.
Gower, M. C., and N. Vainos. "Thin Epitaxial Films of Photorefractive Materials." In Photorefractive Materials, Effects, and Devices II. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/pmed.1990.f3.
Provided they can be satisfactorily fabricated, the use of thin films of photorefractive material as four wave mixing media for real time holographic application is an extremely attractive alternative to the use of the bulk crystal. For example, because guided wave intensities in the film can be very high-even when using lowered cw laser sources, the response time for holographic recording can be very fast. For example, ~100 mW of power coupled in a ~1 cm wide 1µm thick stripe of BaTiO3 film should reduce the response time from ~1 sec at 100 mW/cm2 in the bulk crystal to ~100 µsec in the film. Furthermore, with thin photorefractive films large area real time phase conjugate mirror operation with low powered laser sources can be contemplated.
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Jia, Renxu, Yimen Zhang, Yuming Zhang, and Yuehu Wang. "Nitrogen incorporation characteristics of 4H-SiC epitaxial layer." In Sixth International Conference on Thin Film Physics and Applications. SPIE, 2008. http://dx.doi.org/10.1117/12.792363.
Kaminaga, K., R. Sei, T. Fukumura, and T. Hasegawa. "Epitaxial Growth of Yttrium Monoxide Thin Film." In 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.ps-8-23.
Hsin, C., and S. Lee. "Reliability of Epitaxial Nickel Disilicide Thin Film." In 2016 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2016. http://dx.doi.org/10.7567/ssdm.2016.ps-8-04.
Journigan, Troie, Yangyang Liu, Christian Cabello, S. Novia Berriel, Parag Banerjee, and Michael Chini. "High Harmonic Generation from Thin Film ZnO in Transmission Geometry." In CLEO: Applications and Technology. Washington, D.C.: Optica Publishing Group, 2023. http://dx.doi.org/10.1364/cleo_at.2023.jw2a.58.
Liu, Junming, Zhiguo Liu, Shining Zhu, Zhuangchun Wu, Ming-Sheng Zhang, and Duan Feng. "Epitaxial growth of optical LiTaO 3 and LiNbO 3 waveguide film by pulsed-laser deposition." In Thin Film Physics and Applications: Second International Conference, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1994. http://dx.doi.org/10.1117/12.190783.
"Trajectory morphing applied to epitaxial thin film growth." In Proceedings of the 1999 American Control Conference. IEEE, 1999. http://dx.doi.org/10.1109/acc.1999.782435.
Kordesch, Martin E. The In Situ Observation of Epitaxial Diamond Thin Film Nucleation and Growth using Emission Electron Microscopy. Fort Belvoir, VA: Defense Technical Information Center, June 1995. http://dx.doi.org/10.21236/ada296639.
Morton, S., J. Tobin, M. Spangenberg, J. Neal, T. Shen, G. Waddill, J. Matthew, et al. Magnetic properties of ultra thin epitaxial Fe films on GaAs(001). Office of Scientific and Technical Information (OSTI), October 2003. http://dx.doi.org/10.2172/15009722.
Haven, Victor E., and Jr. Epitaxial (100) GaAs Thin Films on Sapphire for Surface Acoustic Wave/Electronic Devices. Fort Belvoir, VA: Defense Technical Information Center, December 1985. http://dx.doi.org/10.21236/ada164252.
Norton, David P. Synthesis and Characterization of BaFeO3, (Ba,Bi)FeO3, and Related Epitaxial Thin Films and Nanostructures. Fort Belvoir, VA: Defense Technical Information Center, January 2009. http://dx.doi.org/10.21236/ada510215.
Yu, N., H. Kung, M. Nastasi, and D. Li. Incorporation of iron cations into epitaxial sapphire thin films by co-evaporation and subsequent thermal annealing. Office of Scientific and Technical Information (OSTI), May 1994. http://dx.doi.org/10.2172/10150117.
Taga, N., M. Maekawa, Y. Shigesato, I. Yasui, and T. E. Haynes. Deposition of hetero-epitaxial In{sub 2}O{sub 3} thin films by molecular beam epitaxy. Office of Scientific and Technical Information (OSTI), May 1996. http://dx.doi.org/10.2172/257414.
Davis, R. F., H. H. Lamb, I. S. Tsong, E. Bauer, and E. Chen. Selected Energy Epitaxial Deposition and Low Energy Electron Microscopy of AlN, GaN, and SiC Thin Films. Fort Belvoir, VA: Defense Technical Information Center, December 1997. http://dx.doi.org/10.21236/ada338206.
Davis, R. F., H. H. Lamb, and S. T. Tsong. Selected Energy Epitaxial Deposition and Low Energy Electron Microscopy of AIN, GaN and SiC Thin Films. Fort Belvoir, VA: Defense Technical Information Center, June 1998. http://dx.doi.org/10.21236/ada353949.
Barmak, K. On the Relationship of Magnetocrystalline Anisotropy and Stoichiometry in Epitaxial L1{sub 0} CoPt(001) and FePt(001) Thin Films. Office of Scientific and Technical Information (OSTI), August 2004. http://dx.doi.org/10.2172/829753.
Ruebush, Scott Daniel. The Growth of Thin Epitaxial Copper Films on Ruthenium (0001)and Oxygen-Precovered Ruthenium (0001) as studied by x-rayphotoelectron diffraction. University of California, Davis, Department of Physics, Ph.D. Thesis. Office of Scientific and Technical Information (OSTI), June 1997. http://dx.doi.org/10.2172/6432.
