Journal articles: 'Thin film devices'

1

Muralt, Paul. "Piezoelectric Thin Film Devices." Advances in Science and Technology 67 (October 2010): 64–73. http://dx.doi.org/10.4028/www.scientific.net/ast.67.64.

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The field of piezoelectric thin films for micro and nano systems combines an exciting richness of potential applications with many attractive scientific topics on materials processing and physical properties. Piezoelectricity transforms a mechanical stimulus into an electrical signal, or electrical energy. Miniature thin film devices detect and measure vibrations and acoustic waves, as well as generate electrical power in the mW range by the harvesting of vibration energy. An electrical stimulus can be applied to generate acoustic waves, to damp actively vibrations detected by the same film, or to drive a micro robot. The ability to act in both directions of transfer between mechanical and electrical energy allows for high-performing filters, oscillators, and gravimetric sensors working at frequencies up to10 to 20 GHz. While rigid piezoelectric thin films like AlN excel in GHz applications such as RF filters, ferroelectric thin films like Pb(Zr,Ti)O3 are more efficient in energy conversion and include as further dimension a programmable polarity, which is useful for memory applications.

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SHUR, MICHAEL S., SERGEY L. RUMYANTSEV, and REMIS GASKA. "SEMICONDUCTOR THIN FILMS AND THIN FILM DEVICES FOR ELECTROTEXTILES." International Journal of High Speed Electronics and Systems 12, no. 02 (June 2002): 371–90. http://dx.doi.org/10.1142/s0129156402001320.

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We discuss the evolution from wearable electronics and conductive textiles to electrotextiles with embedded semiconducting films and semiconductor devices and review different semiconductor technologies competing for applications in electrotextiles. We also report on fabrication, characterization, and properties of nanocrystalline semiconductor and metal films and thin-film device structures chemically deposited on fibers, cloth, and large area flexible substrates at low temperatures (close to room temperature). Our approach is based on a new process of depositing polycrystalline CdSe (1.75 eV), CdS (2.4 eV), PbS (0.4 eV), PbSe (0.24 eV) and CuxS (semiconductor/metal) films on flexible substrates from the water solutions of complex-salt compounds. We have covered areas up to 8 × 10 inches but the process can be scaled up. The film properties are strongly affected by processing. We fabricated a lateral solar cell with alternating Cu2-xS and nickel contact stripes deposited on top of a view foil. These sets of contacts represented "ohmic" and "non-ohmic" contacts, respectively. Then CdS films of approximately 0.5 μm thick were deposited on top. We also fabricated a "sandwich" type photovoltaic cell, where the CdS film was sandwiched between an In2O3 layer deposited on a view foil and a Cu2-xS layer deposited on top. Both structures exhibited transient response under light, with the characteristic response time decreasing with the illumination wavelength. This is consistent with having deeper localized states in the energy gap determining the transients for shorter wavelength radiation. (Slow transients related to trapping effects are typical for polycrystalline CdS materials.) We also report on the photovoltaic effect in CdS/CuS films deposited on trylene threads and on a field effect in these films deposited on a flexible copper wire. CdS films deposited on viewfoils exhibit unique behavior under stress and UV radiation exposure with reproducible resistance changes of several orders of magnitude with bending up to 10 mm curvature. Our results clearly demonstrate the feasibility of using this technology for photovoltaic and microelectronics applications for electrotextiles and wearable electronics applications.

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TANAKA, Koichi. "Thin film electroluminescent devices." SHINKU 30, no. 10 (1987): 765–74. http://dx.doi.org/10.3131/jvsj.30.765.

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Scott, J. F., and F. D. Morrison. "Ferroelectric Thin-Film Devices." Ferroelectrics 371, no. 1 (November 14, 2008): 3–9. http://dx.doi.org/10.1080/00150190802384500.

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5

Shuzheng, Mao. "Optical thin film devices." Vacuum 42, no. 16 (1991): 1042. http://dx.doi.org/10.1016/0042-207x(91)91272-p.

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Gau, J. S. "Magnetic thin film devices." Materials Science and Engineering: B 3, no. 4 (September 1989): 377–81. http://dx.doi.org/10.1016/0921-5107(89)90144-x.

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7

Tan, Ming, Wei-Di Liu, Xiao-Lei Shi, Qiang Sun, and Zhi-Gang Chen. "Minimization of the electrical contact resistance in thin-film thermoelectric device." Applied Physics Reviews 10, no. 2 (June 2023): 021404. http://dx.doi.org/10.1063/5.0141075.

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High electrical contact resistance refrains the performance of thin-film thermoelectric devices at the demonstrative level. Here, an additional Ti contact layer is developed to minimize the electrical contact resistance to ∼4.8 Ω in an as-assembled thin-film device with 50 pairs of p–n junctions. A detailed interface characterization demonstrates that the low electrical contact resistance should be mainly attributed to the partial epitaxial growth of Bi2Te3-based thin-film materials. Correspondingly, the superlow electrical contact resistance facilitates the applicability of the out-of-plane thin-film device and results in an ultrahigh surface output power density of ∼81 μW cm−2 at a low temperature difference of 5 K. This study illustrates the Ti contact layer that strengthens the contact between Cu electrodes and Bi2Te3-based thermoelectric thin films mainly through partial epitaxial growth and contributes to high-performance thin-film thermoelectric devices.

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BAYRAKTAROGLU, BURHAN, KEVIN LEEDY, and ROBERT NEIDHARD. "ZnO NANOCRYSTALLINE HIGH PERFORMANCE THIN FILM TRANSISTORS." International Journal of High Speed Electronics and Systems 20, no. 01 (March 2011): 171–82. http://dx.doi.org/10.1142/s0129156411006507.

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In this study, nc - ZnO films deposited in a Pulsed Laser Deposition (PLD) system at various temperatures were used to fabricate high performance transistors. As determined by Transmission Electron Microscope (TEM) images, nc - ZnO films deposited at a temperature range of 25°C to 400°C were made of closely packed nanocolums showing strong orientation. The influences of film growth temperature and post growth annealing on device performance were investigated. Various gate dielectric materials, including SiO 2, Al 2 O 3, and HfO 2 were shown to be suitable for high performance device applications. Bottom-gate FETs fabricated on high resistivity (>2000 ohm-cm) Si substrates demonstrated record DC and high speed performance of any thin film transistors. Drain current on/off ratios better than 1012 and sub-threshold voltage swing values of less than 100mV/decade could be obtained. Devices with 2μm gate lengths produced exceptionally high current densities of >750mA/mm. Shorter gate length devices (LG=1.2μm) had current and power gain cut-off frequencies, f T and f max , of 2.9GHz and 10GHz, respectively.

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9

Moberly, Warren J., John Busch, and David Johnson. "HVEM of crystallization of amorphous TiNi shape memory films." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 1 (August 1992): 30–31. http://dx.doi.org/10.1017/s0424820100120552.

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TiNi alloys, well-known for their shape memory properties that arise due to a martensitic transformation, have recently been considered for application as thin film actuators. Although various methods of thin film preparation have been considered, deposition via d.c. magnetron ion sputtering provides for reproducible film formation as well as possible integration of a TiNi film as a micromachine with a semiconductor device. When sputter deposited at room temperature, the as-deposited films have an amorphous structure. These films can be bent into a particular macroscopic shape prior to crystallization, thereby setting the parent (memory) shape. When used as thin film actuators, TiNi shape memory alloys are quite cost efficient, as compared to the prohibitive manufacturing costs typical when producing bulk shape memory devices. In addition, thin film shape memory devices may be cooled much more quickly than a bulk part, and reversible transformation cycles are achieved in only milliseconds. Applications being considered for these shape memory thin films are as microactuators in optical storage devices and as microvalves in portable gas chromatographs.

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10

Jokerst, N. M. "Integrated Optoelectronics Using Thin Film Epitaxial Liftoff Materials and Devices." Journal of Nonlinear Optical Physics & Materials 06, no. 01 (March 1997): 19–48. http://dx.doi.org/10.1142/s0218863597000034.

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The separation of single crystal thin film epitaxial compound semiconductor layers from a lattice matched growth substrate through selective etching, with subsequent bonding of the epitaxial thin film devices onto host substrates, is an emerging tool for multi-material, hybrid integration. Progress to date in this area, presented herein, includes advanced thin film devices, thin film material separation and device integration processing techniques, and thin film material and device integration with host substrates which include silicon circuitry, polymers, glass, and lithium niobate.

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11

Heutz, Sandrine, Paul Sullivan, Brett M. Sanderson, Stephan M. Schultes, and Tim S. Jones. "Molecular Thin Films for Optoelectronic Applications." Solid State Phenomena 121-123 (March 2007): 373–76. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.373.

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Organic molecular beam deposition (OMBD) is used for co-evaporation of copper phthalocyanine (CuPc) and C60 to form mixed films. Although pure single layers are crystalline, mixing leads to amorphous films in most cases, although phase segregation occurs for high concentrations of C60. An underlying CuPc single layer suppresses the segregation and leads to a homogeneous CuPc/C60 mixed film for all layer compositions. These effects are exploited in photovoltaic (PV) devices, where new architectures to improve device performance are investigated. Mixing the CuPc and C60 improves device performance, with the maximum efficiency (ηp = 1.17%) reached for devices containing 75% CuPc in the mixed layer, surrounded by pure layers at the electrode interfaces.

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Susilawati, Susilawati, Aris Doyan, Syarful Annam, and Lalu Mulyadi. "A systematic review of the trends thin film characteristics research as electronic device (2015-2024)." Jurnal Penelitian Pendidikan IPA 10, no. 4 (April 30, 2024): 198–206. http://dx.doi.org/10.29303/jppipa.v10i4.7165.

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Thin film characteristics are the properties possessed by the thin film, both physical and chemical properties. The characteristics of this thin film are influenced by several factors, namely the material that makes up the thin film, the thin film deposition method, and the conditions of the thin film deposition process. This research aims to identify and analyze research trends in the characteristics of thin films as electronic devices. This research method is descriptive and analytical. The data used in this research was obtained from documents indexed by Google Scholar from 2015-2024 using Publish or Perish and Dimension.ai. Research procedures use PRISMA guidelines. The data identified and analyzed are the type of publication, publication source, and the title of research on thin film synthesis that is widely cited. The data analysis method uses bibliometric analysis assisted by VOSviewer software. The results of the analysis show that the trend of research on the characteristics of thin films as electronic devices indexed by Google Scholar from 2015 to 2024 experienced a fluctuating increase, however, in 2023 there was a decline in the trend of research on the characteristics of thin films as electronic devices. There are many documents in the form of articles, proceedings, book chapters, preprints, and edited books that discuss research into the characteristics of thin films as electronic devices. Key words that are often used in research on the characteristics of thin films as electronic devices are thin film coating, heat transfer characteristic, film characteristic, and photovoltaic characteristic.

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13

Susilawati, Susilawati, Aris Doyan, Agus Abi Purwoko, Ibrahim Ibrahim, Sukainil Ahzan, Sifaul Gummah, Bahtiar Bahtiar, et al. "A Systematic Review of the Trends Thin Film Characteristics Research as Electronic Device (2015-2024)." Jurnal Penelitian Pendidikan IPA 10, no. 6 (June 25, 2024): 313–22. http://dx.doi.org/10.29303/jppipa.v10i6.7812.

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Thin film characteristics are the properties possessed by the thin film, both physical and chemical properties. The characteristics of this thin film are influenced by several factors, namely the material that makes up the thin film, the thin film deposition method, and the conditions of the thin film deposition process. This research aims to identify and analyze research trends in the characteristics of thin films as electronic devices. This research method is descriptive and analytical. The data used in this research was obtained from documents indexed by Google Scholar from 2015-2024 using Publish or Perish and Dimension.ai. Research procedures use PRISMA guidelines. The data identified and analyzed are the type of publication, publication source, and the title of research on thin film synthesis that is widely cited. The data analysis method uses bibliometric analysis assisted by VOSviewer software. The results of the analysis show that the trend of research on the characteristics of thin films as electronic devices indexed by Google Scholar from 2015 to 2024 experienced a fluctuating increase, however, in 2023 there was a decline in the trend of research on the characteristics of thin films as electronic devices. There are many documents in the form of articles, proceedings, book chapters, preprints, and edited books that discuss research into the characteristics of thin films as electronic devices. Key words that are often used in research on the characteristics of thin films as electronic devices are thin film coating, heat transfer characteristic, film characteristic, and photovoltaic characteristic.

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14

Webb, D. C. "Microwave magnetic thin-film devices." IEEE Transactions on Magnetics 24, no. 6 (1988): 2799–804. http://dx.doi.org/10.1109/20.92250.

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15

Dr. Klee, Mareike, Henk Boots, Biju Kumar, Wilco Keur, Marco De Wild, Peter Dirksen, Klaus Reimann, et al. "Thin Film Piezoelectric MEMs Devices." Journal of the Acoustical Society of America 123, no. 5 (May 2008): 3376. http://dx.doi.org/10.1121/1.2934005.

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16

Katz, Howard E., and Jia Huang. "Thin-Film Organic Electronic Devices." Annual Review of Materials Research 39, no. 1 (August 2009): 71–92. http://dx.doi.org/10.1146/annurev-matsci-082908-145433.

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17

Kholkin, A. L., R. Martins, H. Águas, I. Ferreira, V. Silva, O. A. Smirnova, M. E. V. Costa, P. M. Vilarinho, E. Fortunato, and J. L. Baptista. "Metal-ferroelectric thin film devices." Journal of Non-Crystalline Solids 299-302 (April 2002): 1311–15. http://dx.doi.org/10.1016/s0022-3093(01)01152-8.

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18

Akhtar, M., H. A. Weakliem, R. M. Paiste, and K. Gaughan. "Polyaniline thin film electrochromic devices." Synthetic Metals 26, no. 3 (November 1988): 203–8. http://dx.doi.org/10.1016/0379-6779(88)90237-8.

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19

Lancaster, M. J., J. Powell, and A. Porch. "Thin-film ferroelectric microwave devices." Superconductor Science and Technology 11, no. 11 (November 1, 1998): 1323–34. http://dx.doi.org/10.1088/0953-2048/11/11/021.

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20

Burgelman, Marc, Johan Verschraegen, Stefaan Degrave, and Peter Nollet. "Modeling thin-film PV devices." Progress in Photovoltaics: Research and Applications 12, no. 23 (March 2004): 143–53. http://dx.doi.org/10.1002/pip.524.

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21

Abbas, Mazhar, Linxiang Zeng, Fei Guo, Muhammad Rauf, Xiao-Cong Yuan, and Boyuan Cai. "A Critical Review on Crystal Growth Techniques for Scalable Deposition of Photovoltaic Perovskite Thin Films." Materials 13, no. 21 (October 29, 2020): 4851. http://dx.doi.org/10.3390/ma13214851.

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Although the efficiency of small-size perovskite solar cells (PSCs) has reached an incredible level of 25.25%, there is still a substantial loss in performance when switching from small size devices to large-scale solar modules. The large efficiency deficit is primarily associated with the big challenge of coating homogeneous, large-area, high-quality thin films via scalable processes. Here, we provide a comprehensive understanding of the nucleation and crystal growth kinetics, which are the key steps for perovskite film formation. Several thin-film crystallization techniques, including antisolvent, hot-casting, vacuum quenching, and gas blowing, are then summarized to distinguish their applications for scalable fabrication of perovskite thin films. In viewing the essential importance of the film morphology on device performance, several strategies including additive engineering, Lewis acid-based approach, solvent annealing, etc., which are capable of modulating the crystal morphology of perovskite film, are discussed. Finally, we summarize the recent progress in the scalable deposition of large-scale perovskite thin film for high-performance devices.

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22

Reddy, N. Koteeswara, M. Devika, K. R. Gunasekhar, and E. S. R. Gopal. "Fabrication of Photovoltaic Devices Using ZnO Nanostructures and SnS Thin Films." Nano 11, no. 07 (July 2016): 1650077. http://dx.doi.org/10.1142/s1793292016500776.

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The development of nontoxic and cost-effective solar cell devices is one of the challenging tasks even now. With this objective, solar cell devices using tin mono sulfide (SnS) thin films and zinc oxide (ZnO) nanostructures with a superstrate configuration of ITO/ZnO film/ZnO nanorods/SnS film/Zn have been fabricated and their photovoltaic properties have been investigated. Vertically aligned ZnO nanostructures were grown on indium doped tin oxide substrate by chemical solution method and then, SnS thin films were deposited by thermal evaporation method. A typical solar cell device exhibited significant light conversion efficiency with an open circuit voltage and short circuit current of 350[Formula: see text]mV and 5.14[Formula: see text]mA, respectively.

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Hu, Ziyang, Baochen Jiao, Jianjun Zhang, Xiaodan Zhang, and Ying Zhao. "Indium-Doped Zinc Oxide Thin Films as Effective Anodes of Organic Photovoltaic Devices." International Journal of Photoenergy 2011 (2011): 1–5. http://dx.doi.org/10.1155/2011/158065.

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Indium-doped zinc oxide (IZO) thin films were prepared by low-cost ultrasonic spray pyrolysis (USP). Both a low resistivity (3.13×10−3 Ω cm) and an average direct transmittance (400∼1500 nm) about 80% of the IZO films were achieved. The IZO films were investigated as anodes in bulk-heterojunction organic photovoltaic (OPV) devices based on poly(3-hexylthiophene) and [6,6]-phenyl C61-butyric acid methyl ester. The device fabricated on IZO film-coated glass substrate showed an open circuit voltage of 0.56 V, a short circuit current of 8.49 mA cm-2, a fill factor of 0.40, and a power conversion efficiency of 1.91%, demonstrating that the IZO films prepared by USP technique are promising low In content and transparent electrode candidates of low-cost OPV devices.

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He, Ziyan, Xu Zhang, Xiaoqin Wei, Dongxiang Luo, Honglong Ning, Qiannan Ye, Renxu Wu, Yao Guo, Rihui Yao, and Junbiao Peng. "Solution-Processed Silicon Doped Tin Oxide Thin Films and Thin-Film Transistors Based on Tetraethyl Orthosilicate." Membranes 12, no. 6 (June 1, 2022): 590. http://dx.doi.org/10.3390/membranes12060590.

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Recently, tin oxide (SnO2) has been the preferred thin film material for semiconductor devices such as thin-film transistors (TFTs) due to its low cost, non-toxicity, and superior electrical performance. However, the high oxygen vacancy (VO) concentration leads to poor performance of SnO2 thin films and devices. In this paper, with tetraethyl orthosilicate (TEOS) as the Si source, which can decompose to release heat and supply energy when annealing, Si doped SnO2 (STO) films and inverted staggered STO TFTs were successfully fabricated by a solution method. An XPS analysis showed that Si doping can effectively inhibit the formation of VO, thus reducing the carrier concentration and improving the quality of SnO2 films. In addition, the heat released from TEOS can modestly lower the preparation temperature of STO films. By optimizing the annealing temperature and Si doping content, 350 °C annealed STO TFTs with 5 at.% Si exhibited the best device performance: Ioff was as low as 10−10 A, Ion/Ioff reached a magnitude of 104, and Von was 1.51 V. Utilizing TEOS as an Si source has a certain reference significance for solution-processed metal oxide thin films in the future.

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Puah, A. Y. P., Sharipah Nadzirah, Mohd Khairuddin Md Arshad, R. M. Ayub, A. Rahim Ruslinda, and Uda Hashim. "pH Measurement Using Titanium Dioxide Nanoparticles Thin Film Based Sensors." Applied Mechanics and Materials 754-755 (April 2015): 1120–25. http://dx.doi.org/10.4028/www.scientific.net/amm.754-755.1120.

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Optimization gap size and integration of TiO2nanoparticles thin film produce a sensitive sensor device. Sol-gel spin coated TiO2nanoparticles thin film is coated on a conventional fabricated IDEs with gap sizes of 7 μm, 10 μm, 14 μm and 17 μm which is then validated through electrical characterization. I-V characteristics of without and with TiO2thin film of various gap sizes are subjected to pH test are then plotted to describe the resistance of the devices and correlate with the sensitivity measurement. Sensing devices show that devices with larger spacing and greater pH values have higher current. On the other hand, integration of TiO2thin film reduced the resistance of devices. Among the four gap sizes, 7 μm gap sized device is the most sensitive one due to the tremendous difference after small amount of pH dropped on surface, thus lowering the detection limit.

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Sun, Qi, Boyan Li, Xingye Huang, Zhihua Han, Dalong Zhong, and Ying Zhao. "A process study of high-quality Zn(O,S) thin-film fabrication for thin-film solar cells." Clean Energy 7, no. 2 (March 25, 2023): 283–92. http://dx.doi.org/10.1093/ce/zkac069.

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Abstract The Zn(O,S) thin film is considered a most promising candidate for a cadmium-free buffer layer of the Cu(In,Ga)Se2 (CIGS) thin-film solar cell due to its advantages of optical responses in the short-wavelength region and adjustable bandgap. In this paper, the thin-film growth mechanism and process optimization of Zn(O,S) films fabricated using the chemical bath deposition method are systematically investigated. The thickness and quality of Zn(O,S) films were found to be strongly affected by the concentration variation of the precursor chemicals. It was also revealed that different surface morphologies of Zn(O,S) films would appear if the reaction time were changed and, subsequently, the optimum reaction time was defined. The film-growth curve suggested that the growth rate varied linearly with the deposition temperature and some defects appeared when the temperature was too high. In addition, to further improve the film quality, an effective post-treatment approach was proposed and the experimental results showed that the microstructure of the Zn(O,S) thin film was improved by an ammonia etching process followed by an annealing process. For comparison purposes, both Zn(O,S)-based and CdS-based devices were fabricated and characterized. The device with a Zn(O,S)-CIGS solar cell after post-treatment showed near conversion efficiency comparable to that of the device with the CdS-CIGS cell.

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Zhang, Shihai, Bret Neese, Kailiang Ren, Baojin Chu, Feng Xia, T. Xu, Srinivas Tadigadapa, Qing Wang, Q. M. Zhang, and F. Bauer. "Relaxor Ferroelectric Polymers, Thin Film Devices, and Ink-Jet Microprinting for Thin Film Device Fabrication." Ferroelectrics 342, no. 1 (October 2006): 43–56. http://dx.doi.org/10.1080/00150190600946146.

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Kim, Do Hyoung, Han Ki Yoon, Do Hoon Shin, and Riichi Murakami. "Electromagnetic Wave Shielding Properties of ITO/PET Thin Film by Film Thickness." Key Engineering Materials 345-346 (August 2007): 1585–88. http://dx.doi.org/10.4028/www.scientific.net/kem.345-346.1585.

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The thin films of indium tin oxide (ITO) are used for a variety of electronic devices such as solar cells, touch panels, liquid crystal displays (LCDs). However, these electronic devices are not strong enough against heavy impact since their ITO thin films are deposited on glass substrates. Therefore, ITO thin films were prepared by the inclination opposite target type DC magnetron sputtering equipment onto the Polyethylene Terephthalate (PET) substrate at room temperature using oxidized ITO with In2O3 and SnO2 in a weight ratio of 9:1. In this study, the transmittance, resistivity and electromagnetic wave shielding effectiveness of the ITO thin films prepared at various sputtering time (20~80min namely film thickness; 130~500nm) are measured. The results show that transmittance of the ITO thin films could show about 70% in the range of a visible ray by the variation of film thickness. It also can be seen that a minimum exists in the resistivity of ITO thin films for the variation of film thickness. Electromagnetic wave shielding effectiveness was increased as film thickness increased.

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Horii, Tatsuhiro, Toshinori Fujie, and Kenjiro Fukuda. "Flexible Thin-Film Device for Powering Soft Robots." Journal of Robotics and Mechatronics 34, no. 2 (April 20, 2022): 227–30. http://dx.doi.org/10.20965/jrm.2022.p0227.

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The emergence of soft robots with “flexible motion” is expected to be improved by incorporating flexible energy harvesting technology and electronic devices with excellent biocompatibility. Therefore, it is important to improve the design and performance of the device itself, according to the soft adherend to which the device is applied. In this study, we outline the design of flexible devices from a mechanical viewpoint and introduce our recent achievements.

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Yang, Yang, Liping Ma, and Jianhua Wu. "Organic Thin-Film Memory." MRS Bulletin 29, no. 11 (November 2004): 833–37. http://dx.doi.org/10.1557/mrs2004.237.

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AbstractRecently, organic nonvolatile memory devices have attracted considerable attention due to their low cost and high performance. This article reviews recent developments in organic nonvolatile memory and describes in detail an organic electrical bistable device (OBD) that has potential for applications. The OBD consists of a tri-layer of organics/metal nanoclusters/organics sandwiched between top and bottom electrodes. A sufficiently high applied bias causes the metal nanoparticle layer to become polarized, resulting in charge storage near the two metal/organic interfaces. This stored charge lowers the resistance of the device and leads to an electrical switching behavior. The ON and OFF states of an OBD differ in their conductivity by several orders of magnitude and show remarkable bistability—once either state is reached, the device tends to remain in that state for a prolonged period of time. More important, the conductivity states of an OBD can be precisely controlled by the application of a positive voltage pulse (to write) or a negative voltage pulse (to erase). Device performance tests show that the OBD is a promising candidate for high-density, low-cost electrically addressable data storage applications.

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Fork, David K., Florence Armani-Leplingard, and John J. Kingston. "Application of Electroceramic Thin Films to Optical Waveguide Devices." MRS Bulletin 21, no. 7 (July 1996): 53–58. http://dx.doi.org/10.1557/s0883769400035922.

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Electro-optic devices such as fast (>20 GHz) modulators are one application of ferroelectric-oxide thin-film waveguides. A compact, blue laser source of a few milliwatts power capable of lasting thousands of hours is of great interest as applied to optical data storage and xerography. Ferroelectric-oxide thin films offer several potential advantages over bulk materials for optical waveguides, though no electroceramic thin-film devices have replaced bulk devices yet. Bulk waveguides are defined by ion exchange, which produces only a small index difference. Thin films therefore permit higher intensity per unit power in the guide, and hence larger nonlinear effects and shorter interaction lengths.

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Chen, Ying-Chung, Wei-Tsai Chang, Kuo-Sheng Kao, Chun-Hung Yang, and Chien-Chuan Cheng. "The Liquid Sensor Using Thin Film Bulk Acoustic Resonator with C-Axis Tilted AlN Films." Journal of Nanomaterials 2013 (2013): 1–8. http://dx.doi.org/10.1155/2013/245095.

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Dual-mode thin film bulk acoustic resonator (TFBAR) devices are fabricated with c-axis tilted AlN films. To fabricate dual-mode TFBAR devices, the off-axis RF magnetron sputtering method for the growth of tilted piezoelectric AlN thin films is adopted. In this report, the AlN thin films are deposited with tilting angles of 15° and 23°. The frequency response of the TFBAR device with 23° tilted AlN thin film is measured to reveal its ability to provide dual-mode resonance. The sensitivities of the longitudinal and shear modes to mass loading are calculated to be 2295 Hz cm2/ng and 1363 Hz cm2/ng with the mechanical quality factors of 480 and 287, respectively. The sensitivities of the longitudinal and shear modes are calculated to be 0 and 15 Hz cm2/μg for liquid loading.

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Shi, Weikai, Luyao Wang, and Nan Yang. "Investigation of Grain Boundary Effects in Sm0.2Ce0.8O2−x Thin Film Memristors." Materials 17, no. 13 (July 8, 2024): 3360. http://dx.doi.org/10.3390/ma17133360.

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Cerium-based materials (CeO2−x) are of significant interest in the development of vacancy-modulated resistive switching (RS) memory devices. However, the influence of grain boundaries on the performance of memristors is very limited. To fill this gap, this study explores the influence of grain boundaries in cerium-based thin film resistive random-access memory (RRAM) devices. Sm0.2Ce0.8O2−x (SDC20) thin films were deposited on (100)-oriented Nb-doped SrTiO3 (NSTO) and (110)-oriented NSTO substrates using pulsed laser deposition (PLD). Devices constructed with a Pt/SDC20/NSTO structure exhibited reversible and stable bipolar resistive switching (RS) behavior. The differences in conduction mechanisms between single-crystal and polycrystalline devices were confirmed, with single-crystal devices displaying a larger resistance window and higher stability. Combining the results of XPS and I–V curve fitting, it was confirmed that defects near the grain boundaries in the SDC-based memristors capture electrons, thereby affecting the overall performance of the RRAM devices.

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Promnimit, Sujira, and Joydeep Dutta. "Synthesis and Electrical Characterization of Multilayer Thin Films Designed by Layer-by-Layer Self Assembly of Nanoparticles." Journal of Nano Research 11 (May 2010): 1–6. http://dx.doi.org/10.4028/www.scientific.net/jnanor.11.1.

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In this work, we report the directed self organization of multilayer thin film devices with colloidal nanoparticles through Layer-by-Layer (LbL) technique [1]. Self-organization of nanoparticles into assemblies to create novel nanostructures is getting increasing research attention in microelectronics, medical, energy and environmental applications. Directed self-organization of nanoparticles [2] into multilayer thin films were achieved by LbL growth through the interaction of oppositely charged of colloidal nanoparticles on substrates of any kind and shapes. Multilayer thin film devices were fabricated using multilayers of gold (conducting) nanoparticles separated by a dielectric nanoparticulate layer of zinc sulphide. The thin films obtained have been studied extensively and the changes in surface morphology, the optical absorption characteristics, thickness, uniformity, adhesion, and conduction behavior are reported. Current voltage (I-V) characteristics of multilayer devices with an increasing number of deposition cycles show an initial current blockade until an onset voltage value, which increases linearly upon the additional layers stacked in devices [3]. A conductive behavior of the device was observed upon exceeding the onset voltage. Moreover, I-V behavior showed that the conduction onset voltage increases linearly depending on the numbers of layers in the final device controlled by the deposition cycles. Systematic I-V characteristics in the forward and reverse biased conditions demonstrated rectifying behaviors in the onset of conduction voltage which makes these films attractive for future electronic device applications.

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35

Melchor-Robles, J. A., K. E. Nieto-Zepeda, N. E. Vázquez-Barragán, M. Arreguín-Campos, K. Rodríguez-Rosales, J. Cruz-Gómez, A. Guillén-Cervantes, et al. "Characterization of CdS/CdTe Ultrathin-Film Solar Cells with Different CdS Thin-Film Thicknesses Obtained by RF Sputtering." Coatings 14, no. 4 (April 9, 2024): 452. http://dx.doi.org/10.3390/coatings14040452.

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The development of semitransparent CdS/CdTe ultrathin solar cells has been delayed as a result of the activation annealing to which the device must be subjected, which may involve problems such as the sublimation of ultrathin films and the diffusion of Cd and S at the interface. In this work, CdS/CdTe ultrathin devices on soda-lime glass/SnO2:F/ZnO substrates were obtained by RF magnetron sputtering. CdS/CdTe ultrathin heterostructures were obtained with the following thicknesses for the CdS thin film: 70, 110, and 135 nm. The CdTe thickness film was kept constant at 620 nm. Subsequently, activation annealing with CdCl2 was carried out at 400 °C. Surface characterization was performed by scanning electron microscopy, which indicated that the CdCl2 annealing tripled the CdTe thin films’ grain size. Raman characterization showed that CdS thin films deposited by RF sputtering present the first, the second, and the third longitudinal optical modes, indicating the good crystallinity of the CdS thin films. The study showed that the photovoltaic properties of the CdS/CdTe ultrathin devices improved as the CdS thicknesses decreased.

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Vaartstra, Geoffrey, Lenan Zhang, Zhengmao Lu, Carlos D. Díaz-Marín, Jeffrey C. Grossman, and Evelyn N. Wang. "Capillary-fed, thin film evaporation devices." Journal of Applied Physics 128, no. 13 (October 7, 2020): 130901. http://dx.doi.org/10.1063/5.0021674.

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37

Simmons-Potter, K., B. G. Potter Jr, D. C. Meister, and M. B. Sinclair. "Photosensitive thin film materials and devices." Journal of Non-Crystalline Solids 239, no. 1-3 (October 1998): 96–103. http://dx.doi.org/10.1016/s0022-3093(98)00724-8.

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Murtaza, Imran, Ibrahim Qazi, and Khasan S. Karimov. "CuPc/C60heterojunction thin film optoelectronic devices." Journal of Semiconductors 31, no. 6 (June 2010): 064005. http://dx.doi.org/10.1088/1674-4926/31/6/064005.

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39

Colinge, J. P. "Thin-film SOI devices: A perspective." Microelectronic Engineering 8, no. 3-4 (December 1988): 127–47. http://dx.doi.org/10.1016/0167-9317(88)90013-5.

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40

Müller, G. O. "Measuring on thin film electroluminescent devices." Physica Status Solidi (a) 139, no. 1 (September 16, 1993): 271–78. http://dx.doi.org/10.1002/pssa.2211390125.

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41

Müller, G. O., R. Mach, B. Selle, and G. Schulz. "Measuring on thin film electroluminescent devices." Physica Status Solidi (a) 110, no. 2 (December 16, 1988): 657–69. http://dx.doi.org/10.1002/pssa.2211100239.

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42

Sico, Giuliano, Maria Montanino, Fausta Loffredo, Carmela Borriello, and Riccardo Miscioscia. "Gravure Printing for PVDF Thin-Film Pyroelectric Device Manufacture." Coatings 12, no. 7 (July 19, 2022): 1020. http://dx.doi.org/10.3390/coatings12071020.

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Pyroelectric energy harvesting is one of the more recent and promising solid-state approaches for directly converting time-dependent temperature fluctuations into electric energy. Conventional printing technologies can offer many advantages for the production of pyroelectric thin-film-based devices, such as low cost, low temperature, the use of flexible substrates and shaping at the same time as deposition. Nevertheless, some issues related to low printed thickness and film-forming microstructure control need to be addressed. In this exploratory study, the possibility of exploiting the highly attractive gravure printing process for the potential industrial manufacture of flexible polyvinylidene fluoride (PVDF) thin-film pyroelectric devices was investigated. By the use of corona pre-treatment of the printing substrate and low-temperature polar solvent evaporation, multilayer gravure-printed PVDF pyroelectric devices were successfully manufactured for the first time, achieving a maximum generated current of 0.1 nA at 2.5 K/s from a device with an active area of 1 cm2. Considering the very low thermal inertia and performance scaling by the area expected for pyroelectric thin-film-based devices, combined with the upscaling potential of roll-to-roll gravure printing, our results provide new opportunities for on-demand, low-cost pyroelectric device manufacture and their integration in hybrid harvesters.

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43

Xi, Jun Hua, Xue Ping Chen, Hong Xia Li, Jun Zhang, and Zhen Guo Ji. "Effects of Film Thickness on Resistive Switching Characteristics of ZnO Based ReRAM." Advanced Materials Research 721 (July 2013): 194–98. http://dx.doi.org/10.4028/www.scientific.net/amr.721.194.

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ZnO thin films were deposited on heavily doped silicon wafer by DC magnetron sputtering and the Cu electrodes were evaporated on ZnO/ n+-Si by electric beam evaporation to get Cu/ZnO/n+-Si resistive random access memory (ReRAM). The forming, reset and set processes of the devices were investigated using filamentary model. The effects of film thickness on the crystalline structure of the ZnO thin films and the resistive switching characteristics of the fabricated devices were investigated. The diffraction peak intensity and crystal size increased with increasing film thickness, which shows better crystallization. Cu/ZnO/n+-Si structured device exhibits reversible and steady unipolar resistive switching behaviors. The film thickness had great effect on the forming process of the prepared devices, while the values of Vset increased and Vreset varied little with increasing the film thickness.

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Ikenoue, Takumi, Satoshi Yoneya, Masao Miyake, and Tetsuji Hirato. "Epitaxial Growth and Bandgap Control of Ni1-xMgxO Thin Film Grown by Mist Chemical Vapor Deposition Method." MRS Advances 5, no. 31-32 (2020): 1705–12. http://dx.doi.org/10.1557/adv.2020.219.

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ABSTRACTWide-bandgap oxide semiconductors have received significant attention as they can produce devices with high output and breakdown voltage. p-Type conductivity control is essential to realize bipolar devices. Therefore, as a rare wide-bandgap p-type oxide semiconductor, NiO (3.7 eV) has garnered considerable attention. In view of the heterojunction device with Ga2O3 (4.5–5.0 eV), a p-type material with a large bandgap is desired. Herein, we report the growth of a Ni1-xMgxO thin film, which has a larger bandgap than NiO, on α-Al2O3 (0001) substrates that was developed using the mist chemical vapor deposition method. The Ni1-xMgxO thin films epitaxially grown on α-Al2O3 substrates showed crystallographic orientation relationships identical to those of NiO thin films. The Mg composition of Ni1-xMgxO was easily controlled by the Mg concentration of the precursor solution. The Ni1-xMgxO thin film with a higher Mg composition had a larger bandgap, and the bandgap reached 3.9 eV with a Ni1-xMgxO thin film with x = 0.28. In contrast to an undoped Ni1-xMgxO thin film showing insulating properties, the Li-doped Ni1-xMgxO thin film had resistivities of 101–105 Ω∙cm depending on the Li precursor concentration, suggesting that Li effectively acts as an acceptor.

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Hwang, Hui Ung, Jiyoung Yoon, Youn-Seoung Lee, Jangwon Lee, Jonghee Lee, Kyung-Geun Lim, and Jeong Won Kim. "Enhanced hole injection and transport property of thermally deposited copper thiocyanate (CuSCN) for organic light-emitting diodes." APL Materials 10, no. 5 (May 1, 2022): 051109. http://dx.doi.org/10.1063/5.0091055.

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Due to its high conductivity, broad bandgap, and low manufacturing cost, copper thiocyanate (CuSCN) thin film has been considered a good hole injection layer (HIL)/transport layer in many opto/electronic devices. However, the CuSCN thin films made by the conventional wet process have limitations in terms of interfacial deterioration due to solvent incorporation and charge trap formation due to impurities. We produce a CuSCN film for HIL in organic light-emitting diode (OLED) devices using vacuum deposition and compare it to a solution-processed film. In comparison to the control device, the CuSCN HIL insertion lowers the driving voltage of fabricated OLEDs by 1.0–1.5 V. The low-voltage operation corresponds to better hole transport in hole-only devices. The vacuum-deposited CuSCN, in particular, has an impurity-free composition and a high density of band-tail states, according to chemical and electronic structural studies. Because of their outstanding quality, vacuum-deposited CuSCN films show clear advantages over solution-based films in device performance and manufacture.

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Omura, Yasuhisa. "Theoretical Estimation of Power Generation Performance of Nano-Sheet Planar Lateral P-N Junction under Illumination." Jordan Journal of Electrical Engineering 9, no. 3 (2023): 272. http://dx.doi.org/10.5455/jjee.204-1677985772.

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This paper proposes covalent-semiconductor-based lateral p-n junction film solar devices based on a theoretical model, and examines their power generation performance under illumination. The proposed theoretical model is implemented and tested in simulations. The results demonstrate that while Ge film devices have much lower performance at room temperature than Si film devices, this order is significantly reversed at temperatures below 250 K, which is very interesting. The obtained simulation results also reveal that the carrier generation characteristic of Ge film devices is very stable in terms of temperature variation in comparison to Si film devices. The simulation results suggest that thin-Si-film lateral p-n junction solar devices - implemented as multi-stacked solar devices formed on a transparent panel - are applicable to field sensor devices on the ground at temperatures lower than 300 K. However, thin-Ge-film lateral p-n junction solar devices are applicable to field sensor devices on satellites in space because the ambient temperature is lower than 250 K; again as a multi-stacked solar device formed on a transparent panel.

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Feeney, Thomas, Gabriel Aygur, Tony Nguyen, Sidra Farooq, Joao Mendes, Hayden Tuohey, Daniel E. Gómez, Enrico Della Gaspera, and Joel van Embden. "Solution processed bismuth oxyiodide (BiOI) thin films and solar cells." Nanotechnology 34, no. 30 (May 12, 2023): 305404. http://dx.doi.org/10.1088/1361-6528/acc1df.

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Abstract Post transition metal chalcohalides are an emerging class of semiconductor materials for optoelectronic applications. Within this class, bismuth oxyiodide (BiOI) is of particular interest due to its high environmental stability, low toxicity, and defect tolerance considered typical of ‘ns2’ materials. Here we fabricate BiOI thin films using a solution-processed method that affords pin-hole free highly pure films without any residual carbon or other contaminant species. Based on these films, solution processed all-inorganic solar cells with an architecture ITO/NiO x /BiOI/ZnO/Al are fabricated for the first time. Additional device improvements are realised by templating BiOI thin film growth to attain efficiencies that rival some of the best vacuum deposited devices. The BiOI thin films and devices outlined here are an excellent platform for the further development of solution processed bismuth chalcohalide optoelectronic devices.

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Jeon, Buil, and Giwan Yoon. "Water-driven energy harvesting characteristics of MoSi thin film devices." AIP Advances 12, no. 3 (March 1, 2022): 035105. http://dx.doi.org/10.1063/5.0084648.

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In this article, we experimentally examine, for the first time, the water-driven energy harvesting characteristics of molybdenum silicide (MoSi) thin film devices. The water-driven energy harvesting characteristics of MoSi devices originate from the direct contact between water and the surface of the device. The magnitude of the generated voltage varies from about 0.1 to 7 mV depending on the conditions of the devices being in contact with water. Voltage continues to be generated between the wet and dry sides of the MoSi device as long as water persists on its surfaces, even though it does not stream or flow on the surface of the device. The influence of the size of the electrodes and their area of contact with water on the water-driven energy harvesting characteristics of MoSi devices is also investigated.

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Lee, Won-Yong, Hyunjae Lee, Seunghyun Ha, Changmin Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, and Jaewon Jang. "Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO2 Thin-Film Transistor." Electronics 9, no. 3 (March 22, 2020): 523. http://dx.doi.org/10.3390/electronics9030523.

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Sol-gel-processed Mg-doped SnO2 thin-film transistors (TFTs) were successfully fabricated. The effect of Mg concentration on the structural, chemical, and optical properties of thin films and the corresponding TFT devices was investigated. The results indicated that an optimal Mg concentration yielded an improved negative bias stability and increased optical band gap, resulting in transparent devices. Furthermore, the optimal device performance was obtained with 0.5 wt% Mg. The fabricated 0.5 wt% Mg-doped SnO2 TFT was characterized by a field effect mobility, a subthreshold swing, and Ion/Ioff ratio of 4.23 cm2/Vs, 1.37 V/decade, and ~1 × 107, respectively. The added Mg suppressed oxygen-vacancy formation, thereby improving the bias stability. This work may pave the way for the development of alkaline-earth-metal-doped SnO2-based thin-film devices.

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Baker, MV, and J. Landau. "Self Assembled Alkanethiolate Monolayers as Thin Insulating Films." Australian Journal of Chemistry 48, no. 6 (1995): 1201. http://dx.doi.org/10.1071/ch9951201.

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Simple devices that contain alkanethiolate monolayers sandwiched between conducting films were prepared by fixing a gold film to the surface of an alkanethiolate monolayer (on a gold substrate) with silver paint. These devices, and similar devices that did not contain alkanethiolate monolayers, were tested as resistors in d.c . circuits. The devices that contained octadecanethiolate monolayers had resistances of approximately 1012 Ω, 10 orders of magnitude higher than the resistance of devices that contained no monolayers. Sulfur- terminated alkanethiolate monolayers were prepared by treatment of carboxylic acid-terminated monolayers with vapours of thionyl chloride followed by vapours of hexane-1,6-dithiol. Attempts to use the sulfur-containing groups at the surface of this monolayer as 'molecular glue' to attach a flexible gold film to the surface of the monolayer were unsuccessful.

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Journal articles on the topic 'Thin film devices'

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