Relevant bibliographies by topics / Thin film devices

Academic literature on the topic 'Thin film devices'

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Published: 4 June 2021
Last updated: 29 July 2024

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Journal articles on the topic "Thin film devices"

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Muralt, Paul. "Piezoelectric Thin Film Devices." Advances in Science and Technology 67 (October 2010): 64–73. http://dx.doi.org/10.4028/www.scientific.net/ast.67.64.

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The field of piezoelectric thin films for micro and nano systems combines an exciting richness of potential applications with many attractive scientific topics on materials processing and physical properties. Piezoelectricity transforms a mechanical stimulus into an electrical signal, or electrical energy. Miniature thin film devices detect and measure vibrations and acoustic waves, as well as generate electrical power in the mW range by the harvesting of vibration energy. An electrical stimulus can be applied to generate acoustic waves, to damp actively vibrations detected by the same film, or to drive a micro robot. The ability to act in both directions of transfer between mechanical and electrical energy allows for high-performing filters, oscillators, and gravimetric sensors working at frequencies up to10 to 20 GHz. While rigid piezoelectric thin films like AlN excel in GHz applications such as RF filters, ferroelectric thin films like Pb(Zr,Ti)O3 are more efficient in energy conversion and include as further dimension a programmable polarity, which is useful for memory applications.
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SHUR, MICHAEL S., SERGEY L. RUMYANTSEV, and REMIS GASKA. "SEMICONDUCTOR THIN FILMS AND THIN FILM DEVICES FOR ELECTROTEXTILES." International Journal of High Speed Electronics and Systems 12, no. 02 (June 2002): 371–90. http://dx.doi.org/10.1142/s0129156402001320.

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We discuss the evolution from wearable electronics and conductive textiles to electrotextiles with embedded semiconducting films and semiconductor devices and review different semiconductor technologies competing for applications in electrotextiles. We also report on fabrication, characterization, and properties of nanocrystalline semiconductor and metal films and thin-film device structures chemically deposited on fibers, cloth, and large area flexible substrates at low temperatures (close to room temperature). Our approach is based on a new process of depositing polycrystalline CdSe (1.75 eV), CdS (2.4 eV), PbS (0.4 eV), PbSe (0.24 eV) and CuxS (semiconductor/metal) films on flexible substrates from the water solutions of complex-salt compounds. We have covered areas up to 8 × 10 inches but the process can be scaled up. The film properties are strongly affected by processing. We fabricated a lateral solar cell with alternating Cu2-xS and nickel contact stripes deposited on top of a view foil. These sets of contacts represented "ohmic" and "non-ohmic" contacts, respectively. Then CdS films of approximately 0.5 μm thick were deposited on top. We also fabricated a "sandwich" type photovoltaic cell, where the CdS film was sandwiched between an In2O3 layer deposited on a view foil and a Cu2-xS layer deposited on top. Both structures exhibited transient response under light, with the characteristic response time decreasing with the illumination wavelength. This is consistent with having deeper localized states in the energy gap determining the transients for shorter wavelength radiation. (Slow transients related to trapping effects are typical for polycrystalline CdS materials.) We also report on the photovoltaic effect in CdS/CuS films deposited on trylene threads and on a field effect in these films deposited on a flexible copper wire. CdS films deposited on viewfoils exhibit unique behavior under stress and UV radiation exposure with reproducible resistance changes of several orders of magnitude with bending up to 10 mm curvature. Our results clearly demonstrate the feasibility of using this technology for photovoltaic and microelectronics applications for electrotextiles and wearable electronics applications.
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TANAKA, Koichi. "Thin film electroluminescent devices." SHINKU 30, no. 10 (1987): 765–74. http://dx.doi.org/10.3131/jvsj.30.765.

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Scott, J. F., and F. D. Morrison. "Ferroelectric Thin-Film Devices." Ferroelectrics 371, no. 1 (November 14, 2008): 3–9. http://dx.doi.org/10.1080/00150190802384500.

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Shuzheng, Mao. "Optical thin film devices." Vacuum 42, no. 16 (1991): 1042. http://dx.doi.org/10.1016/0042-207x(91)91272-p.

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Gau, J. S. "Magnetic thin film devices." Materials Science and Engineering: B 3, no. 4 (September 1989): 377–81. http://dx.doi.org/10.1016/0921-5107(89)90144-x.

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Tan, Ming, Wei-Di Liu, Xiao-Lei Shi, Qiang Sun, and Zhi-Gang Chen. "Minimization of the electrical contact resistance in thin-film thermoelectric device." Applied Physics Reviews 10, no. 2 (June 2023): 021404. http://dx.doi.org/10.1063/5.0141075.

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High electrical contact resistance refrains the performance of thin-film thermoelectric devices at the demonstrative level. Here, an additional Ti contact layer is developed to minimize the electrical contact resistance to ∼4.8 Ω in an as-assembled thin-film device with 50 pairs of p–n junctions. A detailed interface characterization demonstrates that the low electrical contact resistance should be mainly attributed to the partial epitaxial growth of Bi2Te3-based thin-film materials. Correspondingly, the superlow electrical contact resistance facilitates the applicability of the out-of-plane thin-film device and results in an ultrahigh surface output power density of ∼81 μW cm−2 at a low temperature difference of 5 K. This study illustrates the Ti contact layer that strengthens the contact between Cu electrodes and Bi2Te3-based thermoelectric thin films mainly through partial epitaxial growth and contributes to high-performance thin-film thermoelectric devices.
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BAYRAKTAROGLU, BURHAN, KEVIN LEEDY, and ROBERT NEIDHARD. "ZnO NANOCRYSTALLINE HIGH PERFORMANCE THIN FILM TRANSISTORS." International Journal of High Speed Electronics and Systems 20, no. 01 (March 2011): 171–82. http://dx.doi.org/10.1142/s0129156411006507.

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In this study, nc - ZnO films deposited in a Pulsed Laser Deposition (PLD) system at various temperatures were used to fabricate high performance transistors. As determined by Transmission Electron Microscope (TEM) images, nc - ZnO films deposited at a temperature range of 25°C to 400°C were made of closely packed nanocolums showing strong orientation. The influences of film growth temperature and post growth annealing on device performance were investigated. Various gate dielectric materials, including SiO 2, Al 2 O 3, and HfO 2 were shown to be suitable for high performance device applications. Bottom-gate FETs fabricated on high resistivity (>2000 ohm-cm) Si substrates demonstrated record DC and high speed performance of any thin film transistors. Drain current on/off ratios better than 1012 and sub-threshold voltage swing values of less than 100mV/decade could be obtained. Devices with 2μm gate lengths produced exceptionally high current densities of >750mA/mm. Shorter gate length devices (LG=1.2μm) had current and power gain cut-off frequencies, f T and f max , of 2.9GHz and 10GHz, respectively.
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Moberly, Warren J., John Busch, and David Johnson. "HVEM of crystallization of amorphous TiNi shape memory films." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 1 (August 1992): 30–31. http://dx.doi.org/10.1017/s0424820100120552.

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TiNi alloys, well-known for their shape memory properties that arise due to a martensitic transformation, have recently been considered for application as thin film actuators. Although various methods of thin film preparation have been considered, deposition via d.c. magnetron ion sputtering provides for reproducible film formation as well as possible integration of a TiNi film as a micromachine with a semiconductor device. When sputter deposited at room temperature, the as-deposited films have an amorphous structure. These films can be bent into a particular macroscopic shape prior to crystallization, thereby setting the parent (memory) shape. When used as thin film actuators, TiNi shape memory alloys are quite cost efficient, as compared to the prohibitive manufacturing costs typical when producing bulk shape memory devices. In addition, thin film shape memory devices may be cooled much more quickly than a bulk part, and reversible transformation cycles are achieved in only milliseconds. Applications being considered for these shape memory thin films are as microactuators in optical storage devices and as microvalves in portable gas chromatographs.
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Jokerst, N. M. "Integrated Optoelectronics Using Thin Film Epitaxial Liftoff Materials and Devices." Journal of Nonlinear Optical Physics & Materials 06, no. 01 (March 1997): 19–48. http://dx.doi.org/10.1142/s0218863597000034.

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The separation of single crystal thin film epitaxial compound semiconductor layers from a lattice matched growth substrate through selective etching, with subsequent bonding of the epitaxial thin film devices onto host substrates, is an emerging tool for multi-material, hybrid integration. Progress to date in this area, presented herein, includes advanced thin film devices, thin film material separation and device integration processing techniques, and thin film material and device integration with host substrates which include silicon circuitry, polymers, glass, and lithium niobate.
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Dissertations / Theses on the topic "Thin film devices"

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Bjurström, Johan. "Advanced Thin Film Electroacoustic Devices." Doctoral thesis, Uppsala universitet, Fasta tillståndets elektronik, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-7672.

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The explosive development of the telecom industry and in particular wireless and mobile communications in recent years has lead to a rapid development of new component and fabrication technologies to continually satisfy the mutually exclusive requirements for better performance and miniaturization on the one hand and low cost on the other. A fundamental element in radio communications is time and frequency control, which in turn is achieved by high performance electro-acoustic components made on piezoelectric single crystalline substrates. The latter, however, reach their practical limits in terms of performance and cost as the frequency of operation reaches the microwave range. Thus, the thin film electro-acoustic technology, which uses thin piezoelectric films instead, has been recently developed to alleviate these deficiencies. This thesis explores and addresses a number of issues related to thin film synthesis on the one hand as well as component design and fabrication on other. Specifically, the growth of highly c-axis textured AlN thin films has been studied and optimized for achieving high device performance. Perhaps, one of the biggest achievements of the work is the development of a unique process for the deposition of AlN films with a mean c-axis tilt, which is of vital importance for the fabrication of resonators operating in contact with liquids, i.e. biochemical sensors. This opens the way for the development of a whole range of sensors and bio-analytical tools. Further, high frequency Lamb wave resonators have been designed, fabricated and evaluated. Performance enhancement of FBAR devices is also addressed, e.g. spurious mode suppression, temperature compensation, etc. It has been demonstrated, that even without temperature compensation, shear mode resonators operating in a liquid still exhibit an excellent performance in terms of Q (200) and coupling (~1.8%) at 1.2 GHz, resulting in a mass resolution better than 2 ng cm-2 in water, which excels that of today’s quartz sensors.
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Bjurström, Johan. "Advanced thin film electroacoustic devices /." Uppsala : Acta Universitatis Upsaliensis, 2007. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-7672.

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Fuentes, Iriarte Gonzalo. "AlN Thin Film Electroacoustic Devices." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Univ.-bibl. [distributör], 2003. http://publications.uu.se/theses/91-554-5557-3/.

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Mackay, Ian. "Thin film electroluminescence /." Online version of thesis, 1989. http://hdl.handle.net/1850/10551.

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Inameti, E. E. "Thermal studies of thin film fuses." Thesis, University of Nottingham, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234026.

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Neeves, Matthew Kenneth. "Thin film electrochromic materials and devices." Thesis, University of the West of Scotland, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.627902.

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This thesis investigates in detail the thin film materials required for the construction of a thin film electrochromic device, their production by vacuum deposition and other techniques, and their characterisation by SEM, XRD, and optical and electrochemical methods, leading to a greater understanding of the materials and considerations required in the design of electrochromic layers and devices constructed with said layers. Working devices consisting of electrochromes, electrolytes and transparent conducting electrodes are constructed by methods and upon a scale that are amenable to commercial-scale production. The hardware and software components of a unique real-time spectroscopic electrochemical characterisation cell are described, which have enabled the novel synchronous collection of wideband optical transmittance and electrochemical information at intervals as small as 20ms. Optimal process conditions for the production of electrochromic transition metal oxides of nickel, titanium, tungsten and the novel nickel-chromium oxide by advanced sputtering and electron-beam evaporation techniques are investigated and described in-depth. For comparison, devices are also constructed using the well-known electrochromic material iron hexacyanoferrate, or 'Prussian Blue'. It is essential for devices intended for eyewear applications that materials are eye-safe and that traffic light recognition is not unduly impaired. The electrochromic performance of individual materials and working devices is reported for all materials and spectroscopic data is used to calculate tristimulus co-ordinates and thus characterise the colour performance of the various materials and devices. Working devices also require transparent conductive electrodes. The transparent conductive oxide indium tin oxide (ITO), as prepared by two different sputtering methods is investigated. The sheet resistance of the ITO is shown to have a significant quantifiable effect upon the switching speed of working devices and this is reported in detail.
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Hamblin, Mark Noble. "Thin Film Microfluidic and Nanofluidic Devices." BYU ScholarsArchive, 2010. https://scholarsarchive.byu.edu/etd/2281.

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Lab-on-a-chip devices, also known as micro total analysis systems (μTAS), are implementations of chemical analysis systems on microchips. These systems can be fabricated using standard thin film processing techniques. Microfluidic and nanofluidic channels are fabricated in this work through sacrificial etching. Microchannels are fabricated utilizing cores made from AZ3330 and SU8 photoresist. Multi-channel electroosmotic (EO) pumps are evaluated and the accompanying channel zeta potentials are calculated. Capillary flow is studied as an effective filling mechanism for nanochannels. Experimental departure from the Washburn model is considered, where capillary flow rates lie within 10% to 70% of theoretical values. Nanochannels are fabricated utilizing cores made from aluminum, germanium, and chromium. Nanochannels are made with 5 μm thick top layers of oxide to prevent dynamic channel deformation. Nanochannel separation schemes are considered, including Ogston sieving, entropic trapping, reptation, electrostatic sieving, and immutable trapping. Immutable trapping is studied through dual-segment nanochannels that capture analytes that are too large to pass from one channel into a second, smaller channel. Polymer nanoparticles, Herpes simplex virus type 1 capsids, and hepatitis B virus capsids are trapped and detected. The signal-to-noise ratio of the fluorescently-detected signal is shown to be greater than 3 for all analyte concentrations considered.
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Qian, Feng. "Thin film transistors in polysilicon /." Full text open access at:, 1988. http://content.ohsu.edu/u?/etd,162.

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Geddis, Demetris Lemarcus. "Single fiber bi-directional OE links using 3D stacked thin film emitters and detectors." Diss., Available online, Georgia Institute of Technology, 2004:, 2003. http://etd.gatech.edu/theses/available/etd-04082004-180141/unrestricted/geddis%5Fdemetris%5Fl%5F200312%5Fphd.pdf.

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Yilmaz, Koray. "Investigation Of Inse Thin Film Based Devices." Phd thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/3/12605431/index.pdf.

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In this study, InSe and CdS thin films were deposited by thermal evaporation method onto glass substrates. Schottky and heterojunction devices were fabricated by deposition of InSe and CdS thin films onto SnO2 coated glass substrates with various top metal contacts such as Ag, Au, In, Al and C. The structural, electrical and optical properties of the films were investigated prior to characterization of the fabricated devices. The structural properties of the deposited InSe and CdS thin films were examined through SEM and EDXA analysis. XRD and electrical measurements have indicated that undoped InSe thin films deposited on cold substrates were amorphous with p-type conductivity lying in the range of 10-4-10-5 (&
#61527
.cm)-1 at room temperature. Cd doping and post-depositional annealing effect on the samples were investigated and it was observed that annealing at 100 oC did not show any significant effect on the film properties, whereas the conductivity of the samples increased as the Cd content increases. Temperature dependent I-V and Hall effect measurements have shown that conductivity and carrier concentration increases with increasing absolute temperature while mobility is almost temperature independent in the studied temperature range of 100-430 K. The structural and electrical analysis on the as-grown CdS thin films have shown that the films were polycrystalline with n-type conductivity. Temperature dependent conductivity and Hall effect measurements have indicated that conductivity, mobility and carrier concentrations increases with increasing temperature. Transmission measurements on the as-grown InSe and CdS films revealed optical band gaps around 1.74 and 2.36 eV, respectively. Schottky diode structures in the form of TO/p-InSe/Metal were fabricated with a contact area of around 8x10-3 cm2 and characterized. The best rectifying devices obtained with Ag contacts while diodes with Au contacts have shown slight rectification. The ideality factor and barrier height of the best rectifying structure were determined to be 2.0 and 0.7 eV, respectively. Illuminated I-V measurements revealed open-circuit voltages around 300 mV with short circuit current 3.2x10-7 A. High series resistance effect was observed for the structure which was found to be around 588 &
#61527
. Validity of SCLC mechanism for Schottky structures was also investigated and it was found that the mechanism was related with the bulk of InSe itself. Heterostructures were obtained in the form of TO/n-CdS/p-InSe/Metal and the devices with Au and C contacts have shown the best photovoltaic response with open circuit voltage around 400 mV and short circuit current 4.9x10-8 A. The ideality factor of the cells was found to be around 2.5. High series resistance effect was also observed for the heterojunction devices and the fill factors were determined to be around 0.4 which explains low efficiencies observed for the devices.
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Books on the topic "Thin film devices"

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Douglas, Adam J., ed. Magnetic thin film devices. San Diego: Academic Press, 2000.

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H, Francombe Maurice, ed. Frontiers of thin film technology. San Diego: Academic Press, 2001.

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Jaworek, Anatol. Electrospray technology for thin-film devices deposition. Hauppauge, N.Y: Nova Science, 2010.

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O, Mueller Gerd, and Hewlett-Packard Laboratories, eds. Microcavity effects in thin film electroluminescence. Palo Alto, CA: Hewlett-Packard Laboratories, Technical Publications Department, 1996.

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Shields, James Alexander. Thin film field effect devices. [s.l: The author], 1986.

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H, Francombe Maurice, ed. Handbook of thin film devices. San Diego, CA: Academic, 2000.

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S, Ginley D., Materials Research Society Meeting, and Symposium on Critical Interfacial Issues In Thin-Film Optoelectronic and Energy Conversion Devices (2003 : Boston, Mass.), eds. Critical interfacial issues in thin-film optoelectronic and energy conversion devices: Symposium held December 1-3, 2003, Boston, Massachusetts, U.S.A. Warrendale, Pa: Materials Research Society, 2004.

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Mueller, Mach Regina, and Hewlett-Packard Laboratories, eds. High luminance from thin film electroluminescence devices. Palo Alto, CA: Hewlett-Packard Laboratories, Technical Publications Department, 1996.

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1945-, Auciello Orlando, Engemann Jürgen, North Atlantic Treaty Organization. Scientific Affairs Division., and NATO Advanced Study Institute on Multicomponent and Multilayered Thin Films for Advanced Microtechnologies (1992 : Bad Windsheim, Germany), eds. Multicomponent and multilayered thin films for advanced microtechnologies: Techniques, fundamentals, and devices. Dordrecht: Kluwer Academic, 1993.

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International Workshop on Physics and Technology of Thin Films (2003 Tehran, Iran). Proceedings of the International Workshop on Physics and Technology of Thin Films: IWTF 2003, Tehran, Iran, 22 February-6 March 2003. Edited by Moshfegh Alireza Zaker. River Edge, NJ: World Scientific Pub., 2004.

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Book chapters on the topic "Thin film devices"

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Bisquert, Juan. "Thin Film Transistors." In Nanostructured Energy Devices, 93–115. Title: Nanostructured energy devices : foundations of carrier transport / Juan Bisquert. Description: Boca Raton : CRC Press, 2017.: CRC Press, 2017. http://dx.doi.org/10.1201/9781315117805-5.

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Wang, Xizu, Ady Suwardi, Qiang Zhu, and Jianwei Xu. "Thin-Film Thermoelectrics." In Materials for Devices, 169–98. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003141358-7.

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Scott, J. F., C. A. Araujo, and L. D. McMillan. "Ferroelectric Thin Films and Thin Film Devices." In Ferroelectric Ceramics, 185–211. Basel: Birkhäuser Basel, 1993. http://dx.doi.org/10.1007/978-3-0348-7551-6_7.

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Mach, R. "Thin film electroluminescence devices." In Solid State Luminescence, 229–62. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1522-3_7.

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Fukuda, Kenjiro, and Shizuo Tokito. "Printed Organic Thin-Film Transistors." In Organic Electronics Materials and Devices, 139–54. Tokyo: Springer Japan, 2015. http://dx.doi.org/10.1007/978-4-431-55654-1_6.

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Shimoda, Tatsuya. "Thin Film Formation by Coating." In Nanoliquid Processes for Electronic Devices, 35–51. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-2953-1_4.

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Rani, Varsha, Akanksha Sharma, Harish Chandr Chauhan, and Subhasis Ghosh. "Surface Morphology of Pentacene Thin Film." In Physics of Semiconductor Devices, 911–12. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_235.

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Shimoda, Tatsuya. "Thin-Film Oxide Transistor by Liquid Process (1): FGT (Ferroelectric Gate Thin-Film Transistor)." In Nanoliquid Processes for Electronic Devices, 417–39. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-2953-1_16.

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Schorr, Susan, Christiane Stephan, and Christian A. Kaufmann. "Chalcopyrite Thin-Film Solar-Cell Devices." In Neutron Scattering Applications and Techniques, 83–107. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-06656-1_5.

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Venkatasubramanian, Rama, Edward Siivola, Brooks O'Quinn, Kip Coonley, Thomas Colpitts, Pratima Addepalli, Mary Napier, and Michael Mantini. "Nanostructured Superlattice Thin-Film Thermoelectric Devices." In Nanotechnology and the Environment, 347–52. Washington, DC: American Chemical Society, 2004. http://dx.doi.org/10.1021/bk-2005-0890.ch047.

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Conference papers on the topic "Thin film devices"

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"Thin film devices." In 2009 67th Annual Device Research Conference (DRC). IEEE, 2009. http://dx.doi.org/10.1109/drc.2009.5354969.

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"Thin-film devices." In 2011 69th Annual Device Research Conference (DRC). IEEE, 2011. http://dx.doi.org/10.1109/drc.2011.5994519.

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"Thin-film devices." In 2015 73rd Annual Device Research Conference (DRC). IEEE, 2015. http://dx.doi.org/10.1109/drc.2015.7175629.

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"Thin film devices." In 2017 75th Device Research Conference (DRC). IEEE, 2017. http://dx.doi.org/10.1109/drc.2017.7999507.

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Schroeder, Raoul, and Bruno Ullrich. "Optoelectronic properties of thin film organic/inorganic hybrid devices." In Organic Thin Films. Washington, D.C.: OSA, 2002. http://dx.doi.org/10.1364/otf.2001.omb6.

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SHUR, MICHAEL S., SERGEY L. RUMYANTSEV, and REMIS GASKA. "SEMICONDUCTOR THIN FILMS AND THIN FILM DEVICES FOR ELECTROTEXTILES." In Proceedings of the 2002 Workshop on Frontiers in Electronics (WOFE-02). WORLD SCIENTIFIC, 2003. http://dx.doi.org/10.1142/9789812796912_0013.

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Mao, Shuzheng. "Optical thin film devices." In Shanghai - DL tentative, edited by Shixun Zhou and Yongling Wang. SPIE, 1991. http://dx.doi.org/10.1117/12.47201.

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Lee, S. G., J. P. Sokoloff, and H. Sasabe. "Polymer Thin Film Overlays for Passive Side Polished Fiber Devices." In Organic Thin Films for Photonic Applications. Washington, D.C.: Optica Publishing Group, 1997. http://dx.doi.org/10.1364/otfa.1997.thb.3.

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Side polished fibers (SPF) are interesting devices because they represent a method of altering a light wave's amplitude or phase as it travels in an optical fiber. This eliminates many of the practical problems associated with fiber-optic devices made up of components, such as the optical mode-mismatches and losses resulting from "pigtailing" an optical fiber to a non-fiber device component. In SPFs a portion (~1 mm in length) of the fiber clad is polished away permitting the light wave to interact with an overlay material placed on the polished area. A variety of overlays have been used with SPFs to make both passive and active SPF devices.1
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Domash, Lawrence H., Eugene Y. Ma, Mark T. Lourie, Wayne F. Sharfin, and Matthias Wagner. "Broadly tunable thin-film intereference coatings: active thin films for telecom applications." In Integrated Optoelectronics Devices, edited by Michel J. F. Digonnet. SPIE, 2003. http://dx.doi.org/10.1117/12.479819.

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Badano, Aldo, and Jerzy Kanicki. "Monte carlo modeling method for light transport in organic thin film light-emitting devices." In Organic Thin Films. Washington, D.C.: OSA, 1999. http://dx.doi.org/10.1364/otf.1999.sud2.

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Reports on the topic "Thin film devices"

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Wu, X. D., A. Finokoglu, M. Hawley, Q. Jia, T. Mitchell, F. Mueller, D. Reagor, and J. Tesmer. High-temperature superconducting thin-film-based electronic devices. Office of Scientific and Technical Information (OSTI), September 1996. http://dx.doi.org/10.2172/378956.

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Martin U. Pralle and James E. Carey. Black Silicon Enhanced Thin Film Silicon Photovoltaic Devices. Office of Scientific and Technical Information (OSTI), July 2010. http://dx.doi.org/10.2172/984305.

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Wagner, A. V., R. J. Foreman, L. J. Summers, T. W. Jr Barbee, and J. C. Farmer. Fabrication and testing of thermoelectric thin film devices. Office of Scientific and Technical Information (OSTI), March 1996. http://dx.doi.org/10.2172/212542.

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Baron, B. N., R. W. Birkmire, J. E. Phillips, W. N. Shafarman, S. S. Hegedus, and B. E. McCandless. Fundamentals of polycrystalline thin film materials and devices. Office of Scientific and Technical Information (OSTI), January 1991. http://dx.doi.org/10.2172/6343732.

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Bates, J. B., and T. Sein. Development of Thin-Film Battery Powered Transdermal Medical Devices. Office of Scientific and Technical Information (OSTI), July 1999. http://dx.doi.org/10.2172/10434.

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Wager, J. F., and S. M. Goodnick. Hot Electron Physics of Alternating-Current Thin-Film Electroluminescent Devices. Fort Belvoir, VA: Defense Technical Information Center, September 1994. http://dx.doi.org/10.21236/ada290528.

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Birkmire, R. W., and J. E. Phillips. Processing and modeling issues for thin-film solar cell devices. Final report. Office of Scientific and Technical Information (OSTI), November 1997. http://dx.doi.org/10.2172/560776.

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Bates, J., and C. Schmidt. Development of thin-film batteries for implantation of medical devices. CRADA final report. Office of Scientific and Technical Information (OSTI), December 1997. http://dx.doi.org/10.2172/10115648.

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Baron, B. N., R. W. Birkmire, J. E. Phillips, W. N. Shafarman, S. S. Hegedus, and B. E. McCandless. Polycrystalline thin film materials and devices. Annual subcontract report, 16 January 1990--15 January 1991. Office of Scientific and Technical Information (OSTI), November 1991. http://dx.doi.org/10.2172/10106021.

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Birkmire, R. W., J. E. Phillips, W. N. Shafarman, S. S. Hegedus, B. E. McCandless, and T. A. Yokimcus. Polycrystalline Thin Film Materials and Devices, Final Subcontract Report, 16 January 1990 - 15 January 1993. Office of Scientific and Technical Information (OSTI), August 1993. http://dx.doi.org/10.2172/10189352.

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