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Journal articles on the topic 'Thermally assisted switching'

Author: Grafiati

Published: 4 May 2024

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1

Strukov, Dmitri B., and R. Stanley Williams. "Intrinsic constrains on thermally-assisted memristive switching." Applied Physics A 102, no. 4 (2011): 851–55. http://dx.doi.org/10.1007/s00339-011-6269-4.

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2

Taniguchi, Tomohiro, and Hiroshi Imamura. "Spin torque assisted magnetization switching in thermally activated region." Journal of the Korean Physical Society 62, no. 12 (2013): 1773–77. http://dx.doi.org/10.3938/jkps.62.1773.

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3

Iskandarova, I. M., A. V. Ivanov, A. A. Knizhnik, et al. "Simulation of switching maps for thermally assisted MRAM nanodevices." Nanotechnologies in Russia 11, no. 3-4 (2016): 208–14. http://dx.doi.org/10.1134/s1995078016020063.

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4

Guillemenet, Y., L. Torres, G. Sassatelli, and N. Bruchon. "On the Use of Magnetic RAMs in Field-Programmable Gate Arrays." International Journal of Reconfigurable Computing 2008 (2008): 1–9. http://dx.doi.org/10.1155/2008/723950.

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This paper describes the integration of field-induced magnetic switching (FIMS) and thermally assisted switching (TAS) magnetic random access memories in FPGA design. The nonvolatility of the latter is achieved through the use of magnetic tunneling junctions (MTJs) in the MRAM cell. A thermally assisted switching scheme helps to reduce power consumption during write operation in comparison to the writing scheme in the FIMS-MTJ device. Moreover, the nonvolatility of such a design based on either an FIMS or a TAS writing scheme should reduce both power consumption and configuration time required at each power up of the circuit in comparison to classical SRAM-based FPGAs. A real-time reconfigurable (RTR) micro-FPGA using FIMS-MRAM or TAS-MRAM allows dynamic reconfiguration mechanisms, while featuring simple design architecture.

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5

Prejbeanu, Ioan Lucian, Sebastien Bandiera, Ricardo Sousa, and Bernard Dieny. "MRAM Concepts for Sub-Nanosecond Switching and Ultimate Scalability." Advances in Science and Technology 95 (October 2014): 126–35. http://dx.doi.org/10.4028/www.scientific.net/ast.95.126.

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This work reports on advances in MRAM cells aiming at sub-nanosecond switching and for sub-20nm technology nodes. Ultrafast precessional spin-transfer switching in elliptical magnetic tunnel junction nanopillars is possible to obtain in samples integrating a perpendicular polarizer and a tunnel junction with in-plane magnetized electrodes. We show that spin transfer torque (STT) switching in less than 500ps can be achieved in these structures with corresponding write energy less than 100fJ. For high density integration and possibly sub-20nm diameter cells the use of a thermally assisted concept for perpendicular anisotropy cells, where the intrinsic heating is used to simultaneously achieve high thermal stability and low current switching.

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6

El Baraji, M., V. Javerliac, W. Guo, G. Prenat, and B. Dieny. "Dynamic compact model of thermally assisted switching magnetic tunnel junctions." Journal of Applied Physics 106, no. 12 (2009): 123906. http://dx.doi.org/10.1063/1.3259373.

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7

Akagi, F., T. Matsumoto, and K. Nakamura. "Effect of switching field gradient for thermally assisted magnetic recording." Journal of Applied Physics 101, no. 9 (2007): 09H501. http://dx.doi.org/10.1063/1.2710546.

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8

Khalili Amiri, P., P. Upadhyaya, J. G. Alzate, and K. L. Wang. "Electric-field-induced thermally assisted switching of monodomain magnetic bits." Journal of Applied Physics 113, no. 1 (2013): 013912. http://dx.doi.org/10.1063/1.4773342.

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9

Prejbeanu, I. L., W. Kula, K. Ounadjela, et al. "Thermally Assisted Switching in Exchange-Biased Storage Layer Magnetic Tunnel Junctions." IEEE Transactions on Magnetics 40, no. 4 (2004): 2625–27. http://dx.doi.org/10.1109/tmag.2004.830395.

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10

Azevedo, Joao, Arnaud Virazel, Alberto Bosio, et al. "A Complete Resistive-Open Defect Analysis for Thermally Assisted Switching MRAMs." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 22, no. 11 (2014): 2326–35. http://dx.doi.org/10.1109/tvlsi.2013.2294080.

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11

Ralph, D. C., Y. T. Cui, L. Q. Liu, T. Moriyama, C. Wang, and R. A. Buhrman. "Spin-transfer torque in nanoscale magnetic devices." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 369, no. 1951 (2011): 3617–30. http://dx.doi.org/10.1098/rsta.2011.0169.

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We discuss recent highlights from research at Cornell University, Ithaca, New York, regarding the use of spin-transfer torques to control magnetic moments in nanoscale ferromagnetic devices. We highlight progress on reducing the critical currents necessary to produce spin-torque-driven magnetic switching, quantitative measurements of the magnitude and direction of the spin torque in magnetic tunnel junctions, and single-shot measurements of the magnetic dynamics generated during thermally assisted spin-torque switching.

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12

Taniguchi, Tomohiro, and Hiroshi Imamura. "Minimization of the Switching Time of a Synthetic Free Layer in Thermally Assisted Spin Torque Switching." Applied Physics Express 4, no. 10 (2011): 103001. http://dx.doi.org/10.1143/apex.4.103001.

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13

Ren, Yi, Tianle Zhou, Chun Jiang, and Bin Tang. "Thermally switching between perfect absorber and asymmetric transmission in vanadium dioxide-assisted metamaterials." Optics Express 29, no. 5 (2021): 7666. http://dx.doi.org/10.1364/oe.418273.

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14

Yoshikawa, D., Y. Fujisawa, T. Kato, S. Iwata, and S. Tsunashima. "Thermally Assisted Magnetization Switching on Magnetic Tunnel Junctions With Perpendicularly Magnetized TbFe Layer." Journal of the Magnetics Society of Japan 38, no. 3-2 (2014): 123–26. http://dx.doi.org/10.3379/msjmag.1403r003.

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15

Le Gallo, Manuel, Aravinthan Athmanathan, Daniel Krebs, and Abu Sebastian. "Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells." Journal of Applied Physics 119, no. 2 (2016): 025704. http://dx.doi.org/10.1063/1.4938532.

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16

Siddik, Manzar, Seungjae Jung, Jubong Park, et al. "Thermally assisted resistive switching in Pr0.7Ca0.3MnO3/Ti/Ge2Sb2Te5 stack for nonvolatile memory applications." Applied Physics Letters 99, no. 6 (2011): 063501. http://dx.doi.org/10.1063/1.3622656.

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17

Hassdenteufel, Alexander, Birgit Hebler, Christian Schubert, et al. "Thermally Assisted All-Optical Helicity Dependent Magnetic Switching in Amorphous Fe100-xTbxAlloy Films." Advanced Materials 25, no. 22 (2013): 3122–28. http://dx.doi.org/10.1002/adma.201300176.

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18

Zheng, Yuankai, Yihong Wu, Kebin Li, et al. "Magnetic Random Access Memory (MRAM)." Journal of Nanoscience and Nanotechnology 7, no. 1 (2007): 117–37. http://dx.doi.org/10.1166/jnn.2007.18010.

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The high density and high speed nonvolatile MTJ MRAMs are reviewed from perspective of the reading and writing operation. The reading operation of the MRAM with different sensing schemes and cell array structures is discussed, in particular the reference resistance generating schemes which are introduced to maximize the cell efficiency and reading reliability. The high density, low cost cross-point cell layout structures are analyzed systematically. The writing operation modes ranging from the half-select, toggle mode, guided SAF direct writing, thermally assisted writing, to the spin transfer switching are investigated both theoretically and experimentally. The thermal factor always plays an important role in determine not only the thermal stability but also the reading and writing reliability.

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19

Cebollada, F., J. M. González, J. De Frutos, and A. M. González. "Mecanismos de inversión de la magnetización e interacciones en sistemas magnéticos: campo coercitivo versus campo de conmutación y desimanación térmicamente asistida." Boletín de la Sociedad Española de Cerámica y Vidrio 44, no. 3 (2005): 169–76. http://dx.doi.org/10.3989/cyv.2005.v44.i3.385.

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20

Chavent, Antoine, Jeremy Alvarez-Herault, Celine Portemont, et al. "Effects of the Heating Current Polarity on the Writing of Thermally Assisted Switching-MRAM." IEEE Transactions on Magnetics 50, no. 11 (2014): 1–4. http://dx.doi.org/10.1109/tmag.2014.2322494.

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21

Papusoi, C., Y. Conraux, I. L. Prejbeanu, R. Sousa, and B. Dieny. "Switching field dependence on heating pulse duration in thermally assisted magnetic random access memories." Journal of Magnetism and Magnetic Materials 321, no. 16 (2009): 2467–71. http://dx.doi.org/10.1016/j.jmmm.2009.03.050.

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22

Hérault, J., R. C. Sousa, C. Ducruet, et al. "Nanosecond magnetic switching of ferromagnet-antiferromagnet bilayers in thermally assisted magnetic random access memory." Journal of Applied Physics 106, no. 1 (2009): 014505. http://dx.doi.org/10.1063/1.3158231.

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23

Tang, Ke, HongJie Yang, LinHong Cao, HongTao Yu, JinSong Liu, and JunXia Wang. "Thermally assisted switching in FePt single-domain particles with a Gaussian distribution of temperature." Science China Physics, Mechanics and Astronomy 54, no. 7 (2011): 1263–66. http://dx.doi.org/10.1007/s11433-011-4353-6.

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24

Li, Zhen, Liesbet Lagae, Gustaaf Borghs, Robert Mertens, and Willem Van Roy. "Fast thermally assisted switching at low current density in (Ga,Mn)As magnetic tunnel junctions." Applied Physics Letters 96, no. 5 (2010): 052513. http://dx.doi.org/10.1063/1.3302465.

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25

Bandiera, S., R. C. Sousa, M. Marins de Castro, et al. "Spin transfer torque switching assisted by thermally induced anisotropy reorientation in perpendicular magnetic tunnel junctions." Applied Physics Letters 99, no. 20 (2011): 202507. http://dx.doi.org/10.1063/1.3662971.

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26

Deschenes, Austin, Sadid Muneer, Mustafa Akbulut, Ali Gokirmak, and Helena Silva. "Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory." Beilstein Journal of Nanotechnology 7 (November 11, 2016): 1676–83. http://dx.doi.org/10.3762/bjnano.7.160.

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Thermal assistance has been shown to significantly reduce the required operation power for spin torque transfer magnetic random access memory (STT-MRAM). Proposed heating methods include modified material stack compositions that result in increased self-heating or external heat sources. In this work we analyze the self-heating process of a standard perpendicular magnetic anisotropy STT-MRAM device through numerical simulations in order to understand the relative contributions of Joule, thermoelectric Peltier and Thomson, and tunneling junction heating. A 2D rotationally symmetric numerical model is used to solve the coupled electro-thermal equations including thermoelectric effects and heat absorbed or released at the tunneling junction. We compare self-heating for different common passivation materials, positive and negative electrical current polarity, and different device thermal anchoring and boundaries resistance configurations. The variations considered are found to result in significant differences in maximum temperatures reached. Average increases of 3 K, 10 K, and 100 K for different passivation materials, positive and negative polarity, and different thermal anchoring configurations, respectively, are observed. The highest temperatures, up to 424 K, are obtained for silicon dioxide as the passivation material, positive polarity, and low thermal anchoring with thermal boundary resistance configurations. Interestingly it is also found that due to the tunneling heat, Peltier effect, device geometry, and numerous interfacial layers around the magnetic tunnel junction (MTJ), most of the heat is dissipated on the lower potential side of the magnetic junction. This asymmetry in heating, which has also been observed experimentally, is important as thermally assisted switching requires heating of the free layer specifically and this will be significantly different for the two polarity operations, set and reset.

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27

Chen, Yu-Ting, Ting-Chang Chang, Po-Chun Yang, et al. "Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for $\hbox{SiO}_{2}$-Based Structure." IEEE Electron Device Letters 34, no. 2 (2013): 226–28. http://dx.doi.org/10.1109/led.2012.2232276.

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28

Dai, Bing, Takeshi Kato, Satoshi Iwata, and Shigeru Tsunashima. "Spin Transfer Torque Switching of Amorphous GdFeCo With Perpendicular Magnetic Anisotropy for Thermally Assisted Magnetic Memories." IEEE Transactions on Magnetics 48, no. 11 (2012): 3223–26. http://dx.doi.org/10.1109/tmag.2012.2196988.

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29

Liu, Weikang, Bin Cheng, Shaoqing Ren, et al. "Thermally assisted magnetization control and switching of Dy3Fe5O12 and Tb3Fe5O12 ferrimagnetic garnet by low density current." Journal of Magnetism and Magnetic Materials 507 (August 2020): 166804. http://dx.doi.org/10.1016/j.jmmm.2020.166804.

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30

Bi, Chong, Lin Huang, Shibing Long, et al. "Thermally assisted magnetic switching of a single perpendicularly magnetized layer induced by an in-plane current." Applied Physics Letters 105, no. 2 (2014): 022407. http://dx.doi.org/10.1063/1.4890539.

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31

Dai, Bing, Yong Guo, Jiaqi Zhu, et al. "Spin transfer torque switching in exchange-coupled amorphous GdFeCo/TbFe bilayers for thermally assisted MRAM application." Journal of Physics D: Applied Physics 50, no. 13 (2017): 135005. http://dx.doi.org/10.1088/1361-6463/aa5bca.

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32

Kim, Taewook, Tobias Vogel, Eszter Piros, et al. "Oxide thickness-dependent resistive switching characteristics of Cu/HfO₂/Pt ECM devices." Applied Physics Letters 122, no. 2 (2023): 023502. http://dx.doi.org/10.1063/5.0124781.

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HfO2-based resistive random-access memory devices are promising candidates for new memory and computing applications. Hereby, scaling of the devices is a key issue, where overall fundamental switching and conduction mechanisms can be easily influenced by changes in the oxide layer thickness. This work addresses the oxide thickness-dependent resistive switching characteristics in Cu/HfO2/Pt memory devices through bipolar DC switching characterization. Forming, reset, and set characteristics are investigated depending on the oxide layer thickness, revealing a significant difference for thicker compared to thinner films. Thicker samples tend to show a more abrupt reset behavior and a larger set voltage variance, while for thinner samples, a more gradual reset behavior and a low set variance is found. These phenomena can be explained by a model based on thermally assisted electrochemical metallization. Furthermore, to understand the conduction mechanism of the devices, current–voltage curves of the set process were investigated. The devices are found to have an Ohmic conduction mechanism in the lower voltage region generally, while thinner samples tend to show an additional space-charge-limited current conduction mechanism in a higher voltage region.

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33

Wibowo, Nur A., Cahya Handoyo, and Leopoldus R. Sasongko. "Thermally Activated Magnetic Switching Mode for Various Thicknesses of Perpendicularly Ferromagnetic Nano-dot." Nanoscience &Nanotechnology-Asia 9, no. 2 (2019): 259–66. http://dx.doi.org/10.2174/2210681208666180507101809.

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Background: Even applying thermal pulse has been succeeded to reduce the coercivity through randomization the magnetization in such a way stimulate the magnetic reversion, the efficiency of magnetic switching field consumption in writing process still turns out to be an exciting research field to implement the HAMR technology. One of the remarkable geometric properties of HAMR storage media that can be correlated to the writing field reduction issue is the nano-dot thickness. Furthermore, thermal fluctuation causes the magnetization switching process to be probabilistic. This magnetic switching probability determines the magnitude of the writing field. This paper aims to investigate the impact of changes in media thickness on the magnetization process in particular at high temperatures numerically. Methods: Nano-dot was modeled as a parallelepiped with uniaxial anisotropy which was regarded as a magnetically isolated system where no disturbance field of neighboring nano-dots. Simulation arrangements were implemented to evaluate the two viewpoints in the current heat-assisted magnetic recording, either coercivity, as well as writing field consume. Coercivity was gauged by inducing a magnetic field which linearly increased up to 2 Tesla for 2.5 ns at thermal equilibrium to the surrounding. In evaluating writing field consume, thermal field pulse which just below the Curie temperature was generated while the magnetic field inducing the nano-dot. These schemes investigations were based on the Landau-Lifshift- Gilbert equation which accommodates the fluctuation-dissipation theorem in calculating thermal fluctuation effect. Also, temperature dependent material parameters such as magnetic saturation, magnetic anisotropy, and exchange interaction, were taken into account. Results: At room temperature, the coercive and nucleation fields are highly sensitive to the nano-dot thickness. Under thermal assistance, the writing field for 10 nm and 100 nm of the chosen thicknesses are 0.110 T and 0.125 T respectively. These writing grades are significantly lower than the coercivity of the media. For both thicknesses, zero field magnetization reversal phenomena are observed as indicated by the existences of the switching probabilities at H = 0. Conclusion: This numerical study showed that using the heating assistance close to the Curie point, nanodots with the chosen thicknesses and magnetic parameters were probably to be magnetized even no driven magnetic field. Along with this result, magnetic field induction which required to utterly magnetizing was only in the sub-Tesla - about a tenth of the coercive field. During magnetization processes under thermal assistance, randomization of magnetic moments initiated the switching dynamic before the domain wall was nucleated and propagated to reach a single magnetized domain.

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34

Dai, Bing, Takeshi Kato, Satoshi Iwata, and Shigeru Tsunashima. "Temperature Dependence of Critical Current Density of Spin Transfer Torque Switching Amorphous GdFeCo for Thermally Assisted MRAM." IEEE Transactions on Magnetics 49, no. 7 (2013): 4359–62. http://dx.doi.org/10.1109/tmag.2013.2240380.

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35

Tomita, H., S. Miwa, T. Nozaki, et al. "Unified understanding of both thermally assisted and precessional spin-transfer switching in perpendicularly magnetized giant magnetoresistive nanopillars." Applied Physics Letters 102, no. 4 (2013): 042409. http://dx.doi.org/10.1063/1.4789879.

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36

Guillemenet, Y., G. Sassatelli, and L. Torres. "Non-volatile run-time field-programmable gate arrays structures using thermally assisted switching magnetic random access memories." IET Computers & Digital Techniques 4, no. 3 (2010): 211–26. http://dx.doi.org/10.1049/iet-cdt.2009.0019.

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37

Dai, B., J. Zhu, K. Liu, L. Yang, and J. Han. "The dependence of critical current density of GdFeCo layer on composition of thermally assisted STT-RAM." International Journal of Modern Physics B 31, no. 16-19 (2017): 1744075. http://dx.doi.org/10.1142/s0217979217440751.

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Amorphous rare earth–transitional metal (RETM) GdFeCo memory layer with RE- and TM-rich compositions was fabricated in stacks of GdFeCo (10 nm)/Cu (3 nm)/[Co(0.2 nm)/Pd(0.4 nm)]6. Their magnetic properties and spin transfer torque (STT) switching of magnetization were investigated. The maximum magneto-resistance (MR) was around 0.24% for the TM-rich Gd[Formula: see text] (Fe[Formula: see text]Co[Formula: see text])[Formula: see text] memory layer and was −0.03% for the RE-rich Gd[Formula: see text] (Fe[Formula: see text]Co[Formula: see text])[Formula: see text] memory layer. The critical current densities [Formula: see text] to switch the GdFeCo memory layers are in the range of [Formula: see text] A/cm2–[Formula: see text] A/cm2. The dependence of critical current density [Formula: see text] and effective anisotropy constant [Formula: see text] on Gd composition were also investigated. Both [Formula: see text] and [Formula: see text] have maximum values in the Gd composition range from 21–29 at.%, suitable for thermally assisted STT-RAM for storage density exceeding Gb/inch2.

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38

Yaulema, Jorge, Jose Bon, M. Carmen Gómez-Collado, Juan José Pérez, Enrique Berjano, and Macarena Trujillo. "Switching Monopolar Mode for RF-Assisted Resection and Superficial Ablation of Biological Tissue: Computational Modeling and Ex Vivo Experiments." Processes 8, no. 12 (2020): 1660. http://dx.doi.org/10.3390/pr8121660.

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Radiofrequency (RF)-based monopolar (MM) and bipolar mode (BM) applicators are used to thermally create coagulation zones (CZs) in biological tissues with the aim of destroying surface tumors and minimizing blood losses in surgical resection. Both modes have disadvantages as regards safely and in obtaining a sufficiently deep coagulation zone (CZ). In this study, we compared both modes versus a switching monopolar mode (SMM) in which the role of the active electrode changes intermittently between the two electrodes of the applicator. In terms of clinical impact, the three modes can easily be selected by the surgeon according to the surgical maneuver. We used computational and experimental models to study the feasibility of working in MM, BM, and SMM and to compare their CZ characteristics. We focused exclusively on BM and SMM, since MM only creates small coagulation zones in the area between the electrodes. The results showed that SMM produces the deepest CZ between both electrodes (33% more than BM) and SMM did not stop the generator when an electrode lost contact with the tissue, as occurred in BM. Our findings suggest that the selective use of SMM and BM with a bipolar applicator offers greater advantages than using each type alone.

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39

Yoon, Jong-Gul. "A New Approach to the Fabrication of Memristive Neuromorphic Devices: Compositionally Graded Films." Materials 13, no. 17 (2020): 3680. http://dx.doi.org/10.3390/ma13173680.

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Energy-efficient computing paradigms beyond conventional von-Neumann architecture, such as neuromorphic computing, require novel devices that enable information storage at nanoscale in an analogue way and in-memory computing. Memristive devices with long-/short-term synaptic plasticity are expected to provide a more capable neuromorphic system compared to traditional Si-based complementary metal-oxide-semiconductor circuits. Here, compositionally graded oxide films of Al-doped MgxZn1−xO (g-Al:MgZnO) are studied to fabricate a memristive device, in which the composition of the film changes continuously through the film thickness. Compositional grading in the films should give rise to asymmetry of Schottky barrier heights at the film-electrode interfaces. The g-Al:MgZnO films are grown by using aerosol-assisted chemical vapor deposition. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the films show self-rectifying memristive behaviors which are dependent on maximum applied voltage and repeated application of electrical pulses. Endurance and retention performance tests of the device show stable bipolar resistance switching (BRS) with a short-term memory effect. The short-term memory effects are ascribed to the thermally activated release of the trapped electrons near/at the g-Al:MgZnO film-electrode interface of the device. The volatile resistive switching can be used as a potential selector device in a crossbar memory array and a short-term synapse in neuromorphic computing.

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40

Gayen, Anabil, Barnali Biswas, Akhilesh Kumar Singh, Padmanapan Saravanan, and Alagarsamy Perumal. "High Temperature Magnetic Properties of Indirect Exchange Spring FePt/M(Cu,C)/Fe Trilayer Thin Films." Journal of Nanomaterials 2013 (2013): 1–9. http://dx.doi.org/10.1155/2013/718365.

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We report the investigation of temperature dependent magnetic properties of FePt and FePt(30)/M(Cu,C)/Fe(5) trilayer thin films prepared by using magnetron sputtering technique at ambient temperature and postannealed at different temperatures.L10ordering, hard magnetic properties, and thermal stability of FePt films are improved with increasing postannealing temperature. In FePt/M/Fe trilayer, the formation of interlayer exchange coupling between magnetic layers depends on interlayer materials and interface morphology. In FePt/C/Fe trilayer, when the C interlayer thickness was about 0.5 nm, a strong interlayer exchange coupling between hard and soft layers was achieved, and saturation magnetization was enhanced considerably after using interlayer exchange coupling with Fe. In addition, incoherent magnetization reversal process observed in FePt/Fe films changes into coherent switching process in FePt/C/Fe films giving rise to a single hysteresis loop. High temperature magnetic studies up to 573 K reveal that the effective reduction in the coercivity decreases largely from 34 Oe/K for FePt/Fe film to 13 Oe/K for FePt/C(0.5)/Fe film demonstrating that the interlayer exchange coupling seems to be a promising approach to improve the stability of hard magnetic properties at high temperatures, which is suitable for high-performance magnets and thermally assisted magnetic recording media.

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41

Pushp, Aakash, Timothy Phung, Charles Rettner, Brian P. Hughes, See-Hun Yang, and Stuart S. P. Parkin. "Giant thermal spin-torque–assisted magnetic tunnel junction switching." Proceedings of the National Academy of Sciences 112, no. 21 (2015): 6585–90. http://dx.doi.org/10.1073/pnas.1507084112.

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Spin-polarized charge currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin currents from temperature gradients, and their associated thermal-spin torques (TSTs), have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching fields of the MTJ. We attribute the origin of the TST to an asymmetry of the tunneling conductance across the zero-bias voltage of the MTJ. Remarkably, we estimate through magneto-Seebeck voltage measurements that the charge currents that would be generated due to the temperature gradient would give rise to STT that is a thousand times too small to account for the changes in switching fields that we observe.

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42

Zhang, Xiangping, Xingan Jiang, Jianming Deng, Xueyun Wang, and Jiawang Hong. "Sunlight-assisted ferroelectric domain switching and ionic migration in Sn-based ferroelectric." Applied Physics Letters 121, no. 19 (2022): 192902. http://dx.doi.org/10.1063/5.0113665.

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Laser-assisted ferroelectric polarization switching recently has been proved to be an effective mean to manipulate the ferroelectric domain structure, but with the possibility to damage the specimen surface due to high energy input and large thermal expansion. Compared to laser, sunlight with moderate energy is expected to be more accessible. Here, we employed a simulated sunlight illumination instead of high-energy lasers to realize the sunlight-assisted ferroelectric domain switching in Sn2P2S6 single crystals. The origin is the enhancement of localized carrier concentration due to the disproportionation reaction of Sn ions, which induces an additional internal field and assists the domain switching. The migration and accumulation of the Sn ions are also verified with scanning probe technique, which can be utilized as a resistive memory prototype. It is noteworthy that this memory effect can be significantly enhanced by sunlight illumination and, thus, make it suitable for the sunlight control of ferroelectric domain switching and ionic memory devices.

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43

Mishra, Pinkesh Kumar, Meenakshi Sravani, M. V. V. Satya Narayana, and Swapnil Bhuktare. "Acoustically assisted energy efficient field free spin orbit torque switching of out of plane nanomagnet." Journal of Applied Physics 133, no. 13 (2023): 133901. http://dx.doi.org/10.1063/5.0143459.

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Deterministic spin orbit torque (SOT) magnetization switching of the perpendicular magnetic anisotropy structures requires an external magnetic field, which is unsuitable for on-chip applications. Various approaches are there to debar the external magnetic field requirement. In this work, we use static stress, which can generate a virtual magnetic field via magnetoelastic coupling. We show that this field can be used for deterministic magnetization switching. In our simulations, we use an antiferromagnetic material for generating the SOT and exchange bias field and avail the benefits of the field like torque (FLT). With the exclusion of thermal noise, this reduces the threshold current density from 114 to 36 MA/cm2, thus mitigating the energy dissipation by more than nine times. To study the effect of thermal noise, we simulate 500 trajectories and find out the switching probability. We perform simulations to study the effects of current density, stress, pulse width, and FLT on the switching probability in great details. Our simulation results show that we can get sub-ns switching with a probability of 0.99 requiring only 45.5 fJ of energy dissipation. This can be very attractive for artificial neural network kind of applications.

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Adhinarta, J. K., E. Jobiliong, M. Shiddiq, H. P. Uranus, and E. Steven. "Light storage and thermal-assisted switching of SrAl2O4:Eu2+, Dy3+." Journal of Nonlinear Optical Physics & Materials 28, no. 04 (2019): 1950042. http://dx.doi.org/10.1142/s0218863519500425.

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In this work, we demonstrate and evaluate the viability of SrAl2O4:Eu[Formula: see text], Dy[Formula: see text] crystals for long-term light storage applications at low temperatures that can be activated at higher temperatures for on-demand lighting applications. The switching mechanism is discussed from the point of view of the possible interplay between charge transport and the persistent luminescence in this system. Step-wise temperature-dependent luminescence decay time measurement is carried out to determine the optimal temperature for photo-charging and the operational temperature limit of the crystal-under-test as light sources.

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Yang, Zichu, Yuanchang Zhong, Yu Chen, and Dalin Li. "Mixed Variable Parameter Energy Storage-Assisted Frequency Support Strategy." Electronics 13, no. 8 (2024): 1450. http://dx.doi.org/10.3390/electronics13081450.

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With the continuous increase in the installed capacity of new energy systems, the impact of power shocks on grid frequency is becoming more significant, seriously affecting the stability of the grid and thermal power units. For this reason, a mixed variable parameter energy storage-assisted frequency support control method is proposed. This method introduces an integral control mode based on the existing control mode and forms a co-ordinated control mode. The impact of the switching point of the mixed control mode is analyzed, and a new mode switching method is used. The model adjusts the frequency regulation parameters according to the different states of the grid frequency, making the frequency regulation more efficient. Finally, a frequency regulation model that integrates various improvement methods is built, and a 10 min continuous load disturbance is applied to compare and verify the frequency regulation performance of the model as a whole. The results indicate that the proposed control method can significantly improve the quality of grid frequency regulation, reduce the frequency deviation amplitude to 0.00096 p.u., reduce the participation time of thermal power units to 190.8393 s, and reduce the peak output to 0.1934 MW, demonstrating its engineering feasibility.

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Taniguchi, Tomohiro, and Hiroshi Imamura. "Theory of Spin Torque Assisted Thermal Switching of Single Free Layer." IEEE Transactions on Magnetics 48, no. 11 (2012): 3803–6. http://dx.doi.org/10.1109/tmag.2012.2196979.

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Barra, Felipe. "Efficiency Fluctuations in a Quantum Battery Charged by a Repeated Interaction Process." Entropy 24, no. 6 (2022): 820. http://dx.doi.org/10.3390/e24060820.

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A repeated interaction process assisted by auxiliary thermal systems charges a quantum battery. The charging energy is supplied by switching on and off the interaction between the battery and the thermal systems. The charged state is an equilibrium state for the repeated interaction process, and the ergotropy characterizes its charge. The working cycle consists in extracting the ergotropy and charging the battery again. We discuss the fluctuating efficiency of the process, among other fluctuating properties. These fluctuations are dominated by the equilibrium distribution and depend weakly on other process properties.

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Liu, Zengyuan, Pin-Wei Huang, Ganping Ju, and R. H. Victora. "Thermal switching probability distribution of L10 FePt for heat assisted magnetic recording." Applied Physics Letters 110, no. 18 (2017): 182405. http://dx.doi.org/10.1063/1.4983033.

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Panda, Debashis, and Paritosh Piyush Sahu. "Thermal assisted reset modelling in nickel oxide based unipolar resistive switching memory." Journal of Applied Physics 121, no. 20 (2017): 204504. http://dx.doi.org/10.1063/1.4984200.

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Vishnuram, Pradeep, Sudhanshu Kumar, Vivek Kumar Singh, Thanikanti Sudhakar Babu, Ramani Kannan, and Khairul Nisak Bt Md Hasan. "Phase Shift-Controlled Dual-Frequency Multi-Load Converter with Independent Power Control for Induction Cooking Applications." Sustainability 14, no. 16 (2022): 10278. http://dx.doi.org/10.3390/su141610278.

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Induction heating (IH) applications, assisted with converter topology and their control, have become very attractive in recent years. Independent power control for any induction cooking application with simple converter topology, multi-load handling capacity, and a control technique is still a research hot spot. This paper focuses on developing the dual-frequency converter for delivering power to two loads independently. The switching frequencies of the converter for loads 1 and 2 are selected as 20 and 80 kHz, respectively, and the inverter is operated by multiplexing two switching frequencies. The independent power control is performed using a phase shift control scheme and validated in real-time using a PIC16F877A microcontroller. The prototype of 1 kW is developed and load 1 is operated with 550 W and load 2 is operated with 270 W output power. The independent power control is verified for various values of the control angle (ϕ) and it is noticed that the efficiency is 91% at 0∘ and it is above 80% for other values of ϕ. The thermal model of the proposed system is studied using COMSOL multiphysics software and the experimental image is recorded using a FLIR thermal imager. It is noted that the temperature rise in the load is 78 ∘C and 38.5 ∘C for loads 1 and 2, respectively, at time t = 180 s.

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