Relevant bibliographies by topics / Thermally assisted switching

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Thermally assisted switching'

Author: Grafiati
Published: 4 May 2024

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Journal articles on the topic "Thermally assisted switching"

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Strukov, Dmitri B., and R. Stanley Williams. "Intrinsic constrains on thermally-assisted memristive switching." Applied Physics A 102, no. 4 (January 26, 2011): 851–55. http://dx.doi.org/10.1007/s00339-011-6269-4.

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Taniguchi, Tomohiro, and Hiroshi Imamura. "Spin torque assisted magnetization switching in thermally activated region." Journal of the Korean Physical Society 62, no. 12 (June 2013): 1773–77. http://dx.doi.org/10.3938/jkps.62.1773.

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Iskandarova, I. M., A. V. Ivanov, A. A. Knizhnik, A. F. Popkov, B. V. Potapkin, P. N. Skirdkov, K. A. Zvezdin, Q. Stainer, L. Lombard, and K. Mackay. "Simulation of switching maps for thermally assisted MRAM nanodevices." Nanotechnologies in Russia 11, no. 3-4 (March 2016): 208–14. http://dx.doi.org/10.1134/s1995078016020063.

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Guillemenet, Y., L. Torres, G. Sassatelli, and N. Bruchon. "On the Use of Magnetic RAMs in Field-Programmable Gate Arrays." International Journal of Reconfigurable Computing 2008 (2008): 1–9. http://dx.doi.org/10.1155/2008/723950.

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This paper describes the integration of field-induced magnetic switching (FIMS) and thermally assisted switching (TAS) magnetic random access memories in FPGA design. The nonvolatility of the latter is achieved through the use of magnetic tunneling junctions (MTJs) in the MRAM cell. A thermally assisted switching scheme helps to reduce power consumption during write operation in comparison to the writing scheme in the FIMS-MTJ device. Moreover, the nonvolatility of such a design based on either an FIMS or a TAS writing scheme should reduce both power consumption and configuration time required at each power up of the circuit in comparison to classical SRAM-based FPGAs. A real-time reconfigurable (RTR) micro-FPGA using FIMS-MRAM or TAS-MRAM allows dynamic reconfiguration mechanisms, while featuring simple design architecture.
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Prejbeanu, Ioan Lucian, Sebastien Bandiera, Ricardo Sousa, and Bernard Dieny. "MRAM Concepts for Sub-Nanosecond Switching and Ultimate Scalability." Advances in Science and Technology 95 (October 2014): 126–35. http://dx.doi.org/10.4028/www.scientific.net/ast.95.126.

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This work reports on advances in MRAM cells aiming at sub-nanosecond switching and for sub-20nm technology nodes. Ultrafast precessional spin-transfer switching in elliptical magnetic tunnel junction nanopillars is possible to obtain in samples integrating a perpendicular polarizer and a tunnel junction with in-plane magnetized electrodes. We show that spin transfer torque (STT) switching in less than 500ps can be achieved in these structures with corresponding write energy less than 100fJ. For high density integration and possibly sub-20nm diameter cells the use of a thermally assisted concept for perpendicular anisotropy cells, where the intrinsic heating is used to simultaneously achieve high thermal stability and low current switching.
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El Baraji, M., V. Javerliac, W. Guo, G. Prenat, and B. Dieny. "Dynamic compact model of thermally assisted switching magnetic tunnel junctions." Journal of Applied Physics 106, no. 12 (December 15, 2009): 123906. http://dx.doi.org/10.1063/1.3259373.

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Akagi, F., T. Matsumoto, and K. Nakamura. "Effect of switching field gradient for thermally assisted magnetic recording." Journal of Applied Physics 101, no. 9 (May 2007): 09H501. http://dx.doi.org/10.1063/1.2710546.

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Khalili Amiri, P., P. Upadhyaya, J. G. Alzate, and K. L. Wang. "Electric-field-induced thermally assisted switching of monodomain magnetic bits." Journal of Applied Physics 113, no. 1 (January 7, 2013): 013912. http://dx.doi.org/10.1063/1.4773342.

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Prejbeanu, I. L., W. Kula, K. Ounadjela, R. C. Sousa, O. Redon, B. Dieny, and J. P. Nozieres. "Thermally Assisted Switching in Exchange-Biased Storage Layer Magnetic Tunnel Junctions." IEEE Transactions on Magnetics 40, no. 4 (July 2004): 2625–27. http://dx.doi.org/10.1109/tmag.2004.830395.

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Azevedo, Joao, Arnaud Virazel, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri-Sanial, Jeremy Alvarez-Herault, and Ken Mackay. "A Complete Resistive-Open Defect Analysis for Thermally Assisted Switching MRAMs." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 22, no. 11 (November 2014): 2326–35. http://dx.doi.org/10.1109/tvlsi.2013.2294080.

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Dissertations / Theses on the topic "Thermally assisted switching"

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Alvarez-Hérault, Jérémy. "Mémoire magnétique à écriture par courant polarisé en spin assistée thermiquement." Phd thesis, Grenoble, 2010. http://www.theses.fr/2010GRENY038.

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Cette thèse s'inscrit dans la thématique des MRAM, nouvelles mémoires non volatiles utilisant des propriétés originales de l'électronique de spin. Le but de ce travail a été principalement de démontrer qu'un nouveau concept de MRAM était possible afin de passer outre les limitations imposées par chacune des générations déjà existantes (TA-MRAM et STT-RAM). Pour cela, leurs avantages respectifs ont été combinés, à savoir la stabilité thermique pour la TA-MRAM et l'écriture sans champ magnétique pour la STT-RAM. C'est ainsi qu'a été donnée au cours de cette étude la première démonstration de STT-TA-MRAM ainsi qu'une optimisation de ses propriétés grâce une structure améliorée. Le retournement de la couche de stockage par couple de transfert de spin a donc été au centre de ces recherches. Un montage expérimental innovant a également permis d'observer le retournement de l'aimantation en temps réel dans le but de mieux comprendre la physique de l'écriture. Enfin, la problématique de la durée de vie des barrières tunnel a été abordée montrant que celles-ci claquent plus lentement que prévu pour les impulsions courtes
This thesis deals with MRAMs, new non volatile memories using spintronics original properties. The goal of this work has mainly been to demonstrate that a new MRAM concept was possible to break through limitations due to previous generations (TA-MRAM and STT-RAM). Their respective advantages have been combinated, that is to say thermal stability for the TA-MRAM and writing without any magnetic field for the STT-RAM. A first demonstration of this new STT-TA-MRAM has been given at the beginning of this study, followed by improvements on the structure with significantly better electrical results. As a consequence, the spin transfer torque switching of the storage layer has been a key point of our investigation. Moreover, an innovative experimental setup has been tested to measure the real time magnetization reversal in order to understand better the writing physics. To finish, the tunnel barrier lifetime has been explored, showing that breakdown is slower than expected for short pulses
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Chavent, Antoine. "Réduction du champ d'écriture de mémoires magnétiques à écriture assistée thermiquement à l'aide du couple de transfert de spin." Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAT005/document.

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La spintronique propose de nouvelles solutions en microélectronique en termes d’architecture, pour résoudre les problèmes de miniaturisation et de consommation. Son produit phare, les mémoires magnétiques à accès aléatoire (MRAM), est composé de jonctions tunnel magnétiques (JTM). Une alternative intéressante d’architecture MRAM, développée par Crocus Technology propose d’assister thermiquement le retournement du moment magnétique stockant l’information. L’aimantation de la couche de stockage est couplée à une couche antiferromagnétique afin de la stabiliser (couche piégée). Un chauffage par effet Joule à l’aide d’un courant traversant la barrière tunnel permet de libérer la couche de stockage pour écrire l’information à l’aide d’un champ magnétique. Générer un champ magnétique est encore coûteux en puissance. Pour résoudre ce problème, l’idée explorée dans cette thèse est d’exploiter avantageusement le couple de transfert de spin généré par le courant de chauffage pour réduire le champ d’écriture en changeant la polarité du courant de chauffage suivant l’état que l’on cherche à écrire. Pour ce faire, des dispositifs 1 kbit ont été testés, dans lesquels on montre que l’influence du couple de transfert permet de réduire le champ d’écriture. Une nouvelle structure à couche de stockage synthétique ferrimagnétique (SyF) piégée a été développée pour tirer parti du couple de transfert de spin au mieux sans dégrader relations d’épitaxie garantes des propriétés de stabilité et de signal. Pour étudier l’influence du couple de transfert de spin en détail, des diagrammes de phases en champ et tension ont été réalisés sur divers structures, en séparant les différentes composantes de l’empilement complet. En plus du couple de transfert de spin attendu, un effet pair du courant a été observé, favorisant toujours l’état antiparallèle quel que soit la polarité du courant. Cet effet se retrouve tant sur les couches piégées que les couches libres, et peut s’expliquer par un couple de transfert de spin perpendiculaire comme suggéré par la forme des diagrammes obtenus avec des couches libres. Par ailleurs, les diagrammes d’écriture de couche de stockage SyF révèlent une forme complexe qui serait liée à l’excitation d’une seule des deux couches du SyF par le couple de transfert de spin. En variant le produit résistance-surface (RA) de la JTM, on a montré que le couple de transfert de spin semble bien conserver sa proportionnalité avec la densité de courant sur des structures à couche de stockage piégée. Un autre pan du travail concerne la phase de refroidissement à la fin de l’écriture assistée thermiquement. L’influence de la vitesse de refroidissement sur l’efficacité du couple de transfert de spin a été mise en évidence, et il est montré qu’une diminution progressive de la tension permet d’atteindre un régime de refroidissement quasi-statique dans lequel le taux d’erreur est réduit d’un ordre de grandeur sur certaines structures. Les différents résultats sont mis en lien avec la dépendance en température du couplage RKKY au sein du SyF. Celui-ci permet de d’estimer l’évolution de la température en tension et en temps réel. Enfin, l’existence d’un effet thermoélectrique dû à l’asymétrie de chauffage est étudiée
Spintronics offers new solutions in microelectronics regarding architecture, to solve scaling and consumption issues. Its main product, magnetic random access memories (MRAM), is composed of magnetic tunnel junctions (MTJ). Switching of the magnetic moment storing the data is facilitated by a thermally assisted writing method developed by Crocus Technology. The storage layer’s magnetization is coupled to an antiferromagnetic layer to stabilize it (pinned layer). Joule heating thanks to a tunneling current allows freeing the storage layer to write information thanks to a magnetic field. Generating a magnetic field still consumes power. To solve this issue, the idea explored in the thesis is to harness advantageously the spin transfer torque arising from the heating current in order to lower the writing field by changing the heating current polarity depending on the state to write. To do this, 1 kbit test vehicles have been tested, for which it is shown that spin transfer torque influence allows reducing the writing field. A new structure has been developed, consisting of a pinned synthetic ferrimagnetic (SyF) storage layer, to get benefits from the spin transfer torque without degrading epitaxial relations necessary to have a good stability and a good signal. To study the influence of spin transfer torque in details, field-voltage phase diagrams have been measured for various structures, by separating the elementary parts of the full structure. Apart from the expected spin transfer torque, an even effect of the current has been observed, favoring the antiparallel state whatever the current polarity. This effect can be found both in pinned layers and free layers, and can be explained thanks to perpendicular spin transfer torque as suggested by the shape of the diagrams obtained on free layers. Besides, writing diagrams of SyF storage layer have a complexe shape that may be related to the excitation of one only layer of the two of the SyF by spin transfer torque. By varying the resistance-area product (RA) of the MTJ, we showed that spin transfer torque seems to keep its proportionality to current density for structures with pinned storage layer. Another side of the work is related to the cooling phase at the end of the thermally assisted writing. Influence of the cooling rate on the efficiency of spin transfer torque was evidenced, and it is showed that a gradual decrease of the voltage let reach a quasistatic cooling regime in which the writing error rate is reduced by one order of magnitude on some structures. The different results are linked to the temperature dependence of RKKY coupling inside the SyF. This allows estimating real time change of temperature. Finally, thermoelectric effect due to heating asymmetry is studied
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代, 兵., and Bing Dai. "Thermally assisted spin transfer torque switching of amorphous GdFeCo for magnetic random access memories." Thesis, 2013. http://hdl.handle.net/2237/18998.

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Book chapters on the topic "Thermally assisted switching"

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Hassdenteufel, A., B. Hebler, C. Schubert, A. Liebig, M. Teich, J. Schmidt, M. Helm, M. Aeschlimann, M. Albrecht, and R. Bratschitsch. "Thermally Assisted All-Optical Helicity Dependent Switching of Ferrimagnetic Amorphous Fe100−x Tb x Thin Films." In Springer Proceedings in Physics, 238–40. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-07743-7_74.

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Conference papers on the topic "Thermally assisted switching"

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Senni, Sophiane, Lionel Torres, Gilles Sassatelli, Anastasiia Bukto, and Bruno Mussard. "Power efficient Thermally Assisted Switching Magnetic memory based memory systems." In 2014 9th International Symposium on Reconfigurable and Communication-Centric Systems-on-Chip (ReCoSoC). IEEE, 2014. http://dx.doi.org/10.1109/recosoc.2014.6861357.

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Guillemenet, Yoann, Lionel Torres, Gilles Sassatelli, Nicolas Bruchon, and Ilham Hassoune. "A non-volatile run-time FPGA using thermally assisted switching MRAMS." In 2008 International Conference on Field Programmable Logic and Applications (FPL). IEEE, 2008. http://dx.doi.org/10.1109/fpl.2008.4629974.

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Jung, Seungjae, Manzar Siddik, Wootae Lee, Jubong Park, Xinjun Liu, Jiyong Woo, Godeuni Choi, et al. "Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics." In 2011 IEEE International Electron Devices Meeting (IEDM). IEEE, 2011. http://dx.doi.org/10.1109/iedm.2011.6131483.

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Isowaki, Y., Y. Nozaki, and K. Matsuyama. "Thermally assisted switching of exchange coupled bi-layer with different ordering temperature." In INTERMAG Asia 2005: Digest of the IEEE International Magnetics Conference. IEEE, 2005. http://dx.doi.org/10.1109/intmag.2005.1463856.

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Xiong, Shaomin, and David Bogy. "Investigation of the Local Temperature Increase From the Magnetization Decay for Heat Assisted Magnetic Recording." In ASME 2013 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/isps2013-2813.

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The areal data density of magnetic recording hard disk drives (HDDs) increases year by year, following a trend similar to Moore’s law. However, the increase is not unbounded and there are some physical limits. As the density increases, the size of each magnetic grain shrinks. Finally the magnetic grain will be no longer thermally stable due to what is termed superparamagnetism. Above this point, the magnetic storage would be not reliable because the magnetic grains’ orientations fluctuate randomly. To increase magnetic recording density to more than 1 Tb/in2 and break this limit, heat assisted magnetic recording (HAMR) is proposed. In HAMR systems, a more thermally stable magnetic material, one with higher coercivity, will be used as a recording layer. But the coercivity of this material at room temperature is so high that it is difficult for the writer to switch the magnetic orientation with current magnetic transducers. However, the coercivity drops sharply if the temperature is raised close to the Curie temperature. In HAMR systems, a laser is proposed as the means to heat the disk to the Curie point. Simultaneously the magnetic field is applied from the writer to switch the magnetic bits. The success of the magnetic switching is very sensitive to the media temperature [2]. If the temperature is too low compared with the Curie point, it will not be able to write any information into the media. Conversely, heating the media over the Curie point requires more energy and may bring a greater challenge for the head disk interface (HDI). It is very important to understand the local temperature distribution during the laser heating and to calibrate the laser power input for HAMR writing. Some work has been done to evaluate the temperature increase using both numerical and experimental methods [3, 4]. Tagawa et.al. observed the disk refractive index change during laser heating and compared it with the change under conventional oven heating. This is a good method to calibrate the laser power and get the average temperature but it has some limitations for getting the accurate temperature distributions because of the averaging effect for the refractive index measurement by ellipsometry.
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Jewell, J. L., A. Scherer, S. L. McCall, A. C. Gossard, and J. H. English. "GaAs-AlAs Monolithic Microresonator Arrays." In Photonic Switching. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/phs.1987.pdp1.

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Miniaturization of optical logic devices has long been considered to be a key to minimizing their energy requirements but difficult to achieve1-4. We demonstrate a straightforward technique for fabricating arrays of GaAs/AlAs Fabry-Perot etalon devices (microresonators) as small as 1.5 μm in diameter. The growth of integrated GaAs-AlAs nonlinear etalons by molecular beam epitaxy5 (MBE) represents a tremendous advance over previous fabrication techniques6. From the sample of reference 5 we have formed close-packed arrays of monolithic "posts" or microresonators 1.5-5 μm across by ion-beam assisted etching7 and have performed optical NOR/OR gating experiments on them using picosecond pump and probe pulses. These microresonators represent a qualitative advance over the GaAs devices reported by Lee et al8. In that work pixels 9×9 μm square were formed in the active material only, and then sandwiched between dielectric mirrors in the usual way.6 Growth of integrated devices by epitaxial techniques such as MBE allows us to etch right through both mirrors and the active material. This is critical since in an optimized nonlinear etalon the dielectric mirrors comprise most of the total thickness. The lateral optical confinement in these waveguiding structures allows efficient operation with diameters as small as one can focus the light. Elimination of carrier diffusion9,10 out of the devices permits very close spacings. Reduction of energy requirements is expected due to the decreased volume of interaction. Finally, surface recombination8,11 on the sidewalls of the microresonators should produce fast relaxation times. Our experiments show reduced energy requirements (factor of >8), essentially uniform response over small arrays, practically no crosstalk with 3-μm center-center spacing, ~200 ps full recovery time, and thermal stability at 82 MHz operating frequency.
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Yang, Yizhang, W. Liu, S. Shojaeizadeh, S. Zhang, and M. Asheghi. "Thermal Property Measurements of Giant Magnetoresistive (GMR) Layers." In ASME 2002 International Mechanical Engineering Congress and Exposition. ASMEDC, 2002. http://dx.doi.org/10.1115/imece2002-32782.

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Advanced thin-film growth technology has made it possible to arrange different materials at the atomic level and to fabricate thin-film structures (e.g., GMR) with strong quantum effects. GMR devices appear in two important areas of storage technology: GMR sensors for magnetic read heads, and Magnetic Random Access Memory (MRAM). The former is a well-established commercial technology, in which nanoscale thermal transport is related to reliability, through electrostatic discharge (ESD) events as well as performance. In MRAM, the nanoscale thermal transport limits device ultimate performance, but may also present an opportunity for assisted switching. The thermal transport properties of these thin periodic layers play an important role in design, performance and reliability of these devices, which are fundamentally different from their bulk counterparts [1,2].
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Li, Dongbo, Shaomin Xiong, David Braunstein, Xingcai Guo, Sripathi Canchi, and Qing Dai. "A Method to Measure the Media Lubricant Loss After HAMR Recording." In ASME 2016 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/isps2016-9608.

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Heat assisted magnetic recording (HAMR) is anticipated to increase the areal density in hard disk drives to multiple Tb/in2. During HAMR recording, as a near filed laser light heats the media to the temperature above Curie point to assist magnetic switching, the lubricant that is typically applied to the disk surface will be under an intensive thermal stress, which will lead to the lubricant desorption and/or decomposition, and frequently accompanied with the underneath carbon overcoat (COC) graphitization and oxidation. Due to the optical properties change of the COC at such a high temperature, the traditional optical techniques are not appropriate to measure the lubricant thickness post HAMR recording. In this paper, we introduce a new method based on atomic force microscopy (AFM) in different imaging modes to detect the lubricant and also COC thickness change as a result of laser heating with a vertical resolution at the angstrom scale. Using AFM in a soft tapping mode, we can also characterize the lubricant thickness variation with time after laser exposure, which enables the measurement of the lubricant reflow kinetics on HAMR media.
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Yamashita, S., H. Tomita, M. Shinji, N. Takayuki, T. Nagase, K. Nishiyama, E. Kitagawa, et al. "Spin Transfer Switching in Perpendicularly Magnetized GMR Nanopillars in both Dynamic and Thermally Assist Regimes." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.k-6-2.

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Atalay, Ozan, Murat Gultekin, and Sertac Cadirci. "Parametric Investigation on Thermal and Hydraulic Performance of Minichannel Heatsink." In ASME 2021 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2021. http://dx.doi.org/10.1115/imece2021-70472.

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Abstract Insulated Gate Bipolar Transistor (IGBT) is one of the basic electronic components of rail and electric vehicle traction systems. They are used for switching and can perform this task very quickly. Regarding its operation, thermal modelling of IGBT modules is vital for obtaining temperature distribution for these components and thermal resistances of the entire IGBT as well. Nowadays, Computational Fluid Dynamics (CFD) is a robust and advantageous tool for modelling fluid flow and heat transfer problems that can be adopted to the thermal design of such critical components to better understand the effects of the design variables on the thermal-hydraulic performance of IGBT. This study is about conjugate heat transfer in a heat sink with diode and IGBT chips as heat sources and investigates the effect of minichannel porosity on Nusselt number (Nu) and the pumping power at several inlet Reynolds number (Re). The CFD analysis have been conducted parametrically and revealed that with increasing Re, both Nu and pumping powers increased significantly, indicating that heat transfer enhancement as well as power consumption are dominated by the flowrate. It is also shown that low minichannel porosities provide higher Nu and pumping power as well. The parametric studies provided a knowledge about the thermal-hydraulic performance of the IGBT and assisted to understand the effects of the governing parameters on the target functions.
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