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Journal articles on the topic 'Thermal interdiffusion'

Author: Grafiati

Published: 10 December 2022

Last updated: 28 January 2023

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1

Lenoble, O., J. F. Bobo, H. Fischer, Ph Bauer, M. F. Ravet, and M. Piecuch. "Structural properties and thermal stability of Fe/Al2O3 multilayers." Journal of Materials Research 10, no. 12 (December 1995): 3062–67. http://dx.doi.org/10.1557/jmr.1995.3062.

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Iron/alumina multilayers have been deposited on sapphire wafers using RF magnetron sputtering. To study the interdiffusion, the multilayers were annealed in a tubular furnace under a 10−7 mbar vacuum, and the samples examined by using a combination of classical diffractometry (θ/2θ) and Grazing Incidence Scattering (GIS) for the phase determination, and Small Angle X-ray Scattering (SAXS) for the superstructure of the multilayers. In all cases, in the as-deposited state the alumina is amorphous and the iron is crystalline in the bcc phase. Thermal anneals at temperatures between 573 and 873 K give evidence for segregation to the interfaces. At higher temperatures, interdiffusion occurs, leading to the formation of different phases. The Fe-Al2O3 interdiffusion coefficient has been evaluated in the temperature range from 873 to 1273 K.

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2

Zhang, Chao, Jianjun Song, and Jie Zhang. "Study of Si–Ge Interdiffusion in Laser Recrystallization of Ge Epitaxial Film on Si Substrate." Science of Advanced Materials 13, no. 1 (January 1, 2021): 1–9. http://dx.doi.org/10.1166/sam.2021.3777.

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Direct epitaxial growth of germanium (Ge) film on silicon (Si) substrate (GOSS) holds great potential in micro-electronics and optoelectronics. However, due to the 4.2% lattice mismatch between Si and Ge, it is difficult to directly obtain high quality Ge by epitaxy on Si substrate. Laser recrystallization technology provides a simple, efficient and low-cost way to improve the crystal quality of epitaxial Ge film grown on Si substrate. This technology is essentially a process of thermally induced phase transformation. By controlling the laser process parameters, epitaxial film of a certain thickness is melted, so that lattice rearrangement and recrystallization are achieved, and high-quality thin Ge/Si can be prepared. Laser recrystallization is a high temperature thermal process, and Si–Ge interdiffusion may detrimentally occur. In this paper, the mechanism of Si–Ge interdiffusion is discussed. Based on Fick's law of diffusion, a numerical model for Si–Ge interdiffusion of GOSS is established. On this basis, the process simulation of thermal annealing and laser recrystallization Si–Ge interdiffusion is carried out by Sentaurus Process simulation. The results show that compared with the traditional thermal annealing, the Si–Ge interdiffusion of Ge on Si almost does not occur in the process of laser recrystallization. By reasonably controlling the process parameters of laser recrystallization, the thin Ge film near the Si–Ge interface does not melt, which can not only improve the crystal quality of Ge epitaxial layer, but also effectively avoid the Si–Ge interdiffusion in the process of laser recrystallization. Through this research, we have aimed at predicting and control the Si–Ge interdiffusion, providing an important technical reference for the preparation of high quality GOSS by laser recrystallization technology.

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3

Filipek, Robert, Marek Danielewski, E. Tyliszczak, M. Pawełkiewicz, and S. Datta. "Thermal Stability of NiAl-Base Coatings for High Temperature Application." Defect and Diffusion Forum 237-240 (April 2005): 709–14. http://dx.doi.org/10.4028/www.scientific.net/ddf.237-240.709.

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Aluminide diffusion coatings act as a remedy against the aggressive environments in which modern aero-gas turbines operate. Platinum addition to basic aluminide coatings significantly improves the oxidation resistance of these coatings. The increase in operating temperatures of industrial energy systems and gas turbines, has led to the extensive use of coatings capable of providing improved service life. Interdiffusion plays a critical role in understanding the integrity of such coatings. The Danielewski-Holly model of interdiffusion which allows for the description of a wide range of processes (including processes stimulated by reactions at interfaces) is employed for studying of interdiffusion in the Pt-modified β-NiAl coatings. Using the inverse method the intrinsic diffusivities of Ni, Al and Pt were calculated. Such obtained diffusivities were subsequently used for modelling of thermal stability of Pt-modified aluminide coatings in air and in argon atmosphere.

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4

Li, Wei Zhou, Yue Qiao Li, Dan Qing Yi, and Hui Qun Liu. "Microstructures and Interfacial Reaction of CrON Diffusion Barrier in the NiCrAlY-CrON Duplex Coating System during Thermal Treatment." Advanced Materials Research 239-242 (May 2011): 206–13. http://dx.doi.org/10.4028/www.scientific.net/amr.239-242.206.

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To decrease the interdiffusion, CrON interlayer as a diffusion barrier was introduced into the interface of NiCrAlY overlayer and DSM11 substrate. The microstructure and effect of the diffusion barrier were investigated. It was found that the as-deposited CrON diffusion barrier was comprised of Cr2O3and CrN. During thermal treatment (including vacuum heat treatment and thermal exposure), the diffusion barrier was first transformed to Al2O3and Cr2N, then to Al2O3dominant interlayer, and porous mixed-oxides including TiO2and NiCr2O4spinels were detected in the interdiffusion zone between the diffusion barrier and the substrate. The presence of α- Al2O3in the diffusion barrier was the main reason for suppressing the interdiffusion. The interfacial reaction mechanism in the diffusion barrier was discussed by elemental diffusion and chemical reaction thermodynamics.

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5

Martins, Ilson C., Guilherme Z. Soriano, Michelangelo Durazzo, Elita F. Urano de Carvalho, Léa Sarita Montagna, and Adonis M. Saliba-Silva. "Thermal Interdiffusion Products of U-10Mo in Al Matrix." Materials Science Forum 660-661 (October 2010): 69–75. http://dx.doi.org/10.4028/www.scientific.net/msf.660-661.69.

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New nuclear fuel material with high density in uranium is envisaged for intense irradiation research reactors. The alloy U-Mo has been researched as a feasible candidate to be used in such reactors. This nuclear fuel is conceived to be used encapsulated in aluminum matrix. Nevertheless, there are interaction products of U-Mo/Al which form porosity during irradiation, leading to routine operation harms in research reactors. This interaction is due to solid solution interdiffusion of species, mainly of Al towards U-Mo region forming reaction products. This interaction could be studied by on-pile method, observing the occurrence of formed products during irradiation, but this method is costly and used only for long term experiments in very few reactors in the world. For this, several out-of-pile studies using heat treatments of diffusion pairs are carried out at adequate temperatures and times, just below the -phase eutectoid temperature to simulating the interdiffusion and formation U-Mo-Al phases. In the present study, it was employed a new developed assembling method to prepare interdiffusion pairs by immersing sliced U-10Mo sticks inside molten Al. These samples are made by induction furnace, in temperature range ~660-670 °C, under controlled argon atmosphere, in order to entrap molten Al around U-Mo sticks and so keeping this entangled structure after solidification. The interdiffusion pairs are then cut and prepared for treatments. This novel sample preparation guarantees full contact between the U-Mo and Al without oxidation contact, creating so, the ideal conditions for interdiffusion investigation of the interfaces of Al/U-Mo. Preliminary results to study interaction products where achieved by heat treatments during 5h at 550°C. Observations and calculations from SEM/EDS microstructures and XRD diffractograms revealed few microns interaction layer between the matrix and the fuel material, resembling phases reported in the literature for the interaction products between U-Mo-Al. This layer is mainly composed by Al and U, Mo phases, probably (U, Mo)Al3 and phases containing Si, as U3Si5 and a proposed one Al2Si3U3 that fits better to XRD spectrum of experimented diffusion pairs.

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6

Brunel, M., S. Enzo, M. Jergel, S. Luby, E. Majkova, and I. Vavra. "Structural characterization and thermal stability of W/Si multilayers." Journal of Materials Research 8, no. 10 (October 1993): 2600–2607. http://dx.doi.org/10.1557/jmr.1993.2600.

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Tungsten/silicon multilayers with tungsten layers of a thickness of 1–2 nm were prepared by means of electron beam deposition. Their structure and thermal stability under rapid thermal annealing were investigated by a combination of x-ray diffraction techniques and cross-sectional transmission electron microscopy. The crystallization behavior was found to depend on the interdiffusion and mixing at the tungsten/silicon interfaces during deposition as well as during annealing. The as-deposited tungsten/silicon multilayers were amorphous and remained stable after annealing at 250 °C/40 s. Interdiffusion and crystallization occurred after annealing all samples from 500 °C/40 s up to 1000 °C/20 s. By performing the same heat treatment in the tungsten/silicon multilayers, the formation of body-centered cubic W was observed with a layer thickness ratio δW/δsi = 1, whereas tetragonal WSi2 was detected in tungsten/silicon multilayers with a layer thickness ratio of δw/δsi ∼0.25. This dependence of the crystallization products on the layer thickness ratio δw/δsi originates from the different phenomena of interdiffusion and mixing at the tungsten/silicon interfaces. The possible formation of bcc tungsten as a first stage of crystallization of tungsten-silicon amorphous phase, rich in tungsten, is discussed.

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7

Anderson, G. W., M. Pakala, and Y. Huai. "Spin-valve thermal stability: interdiffusion versus exchange biasing." IEEE Transactions on Magnetics 36, no. 5 (2000): 2605–7. http://dx.doi.org/10.1109/20.908530.

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8

Tsvetkov, Dmitry, Nadezhda Tsvetkova, Ivan Ivanov, Dmitry Malyshkin, Vladimir Sereda, and Andrey Zuev. "PrBaCo2O6−δ-Ce0.8Sm0.2O1.9 Composite Cathodes for Intermediate-Temperature Solid Oxide Fuel Cells: Stability and Cation Interdiffusion." Energies 12, no. 3 (January 29, 2019): 417. http://dx.doi.org/10.3390/en12030417.

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The single-phase oxide PrBaCo2O6−δ and composites (100 − y)PrBaCo2O6−δ-yCe0.8Sm0.2O1.9 (y = 10–30 wt.%) were investigated as cathode materials for intermediate-temperature solid oxide fuel cells. The chemical compatibility, cation interdiffusion, thermal expansion and dc conductivity were studied. As a result, strong interdiffusion of Pr and Sm was found between PrBaCo2O6−δ and Ce0.8Sm0.2O1.9. This leads to only insignificantly decreasing thermal expansion coefficient of composite with increasing fraction of Ce0.8Sm0.2O1.9 and, thus, mixing PrBaCo2O6−δ with Ce0.8Sm0.2O1.9 does not improve thermal expansion behavior of the cathode material. Moreover, formation of poorly-conducting BaCeO3, caused by chemical interaction between the double perovskite and doped ceria, was shown to lead to pronounced drop in the electrical conductivity of the composite cathode material with increasing Ce0.8Sm0.2O1.9 content.

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9

Chen, Zun, Jinyan Zhong, Shanglin Yang, Songmei Li, Jianhua Liu, and Mei Yu. "The Interdiffusion Behavior of NiCoCrAlYHf Coating Deposited by Arc Ion Plating on Carburized Ni-Based Single Crystal Superalloy." Materials 14, no. 23 (December 2, 2021): 7401. http://dx.doi.org/10.3390/ma14237401.

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In the present study, arc ion plating (AIP) was used to prepare a NiCoCrAlYHf coating (HY5 coating) on a carburized third-generation single-crystal superalloy DD10. The interdiffusion behavior of the carburized superalloy with an HY5 coating was investigated for a 1000 h oxidation time at 1100 °C. Carburization enhanced the interfacial bonding force and improved the microstructure of the NiCoCrAlYHf coating. An interdiffusion zone (IDZ) formed after a 300 h oxidation time, and the formation of a carburized layer effectively suppressed an inward diffusion of cobalt, aluminium, and chromium to the DD10 superalloy as well as an outward diffusion of nickel and refractory elements for instance rhenium and tungsten to the HY5 coating that occurred in static air at 1100 °C. The roles of the carburized layer in affecting thermal cyclic oxidation and element interdiffusion were studied. Subsequently, a modified form of the Boltzmann–Matano analysis was used to present the interdiffusion coefficients of aluminium.

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10

Kim, Dasom, Kyungju Kim, and Hansang Kwon. "Interdiffusion and Intermetallic Compounds at Al/Cu Interfaces in Al-50vol.%Cu Composite Prepared by Solid-State Sintering." Materials 14, no. 15 (July 31, 2021): 4307. http://dx.doi.org/10.3390/ma14154307.

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Al–Cu composites have attracted significant interest recently owing to their lightweight nature and remarkable thermal properties. Understanding the interdiffusion mechanism at the numerous Al/Cu interfaces is crucial to obtain Al–Cu composites with high thermal conductivities. The present study systematically investigates the interdiffusion mechanism at Al/Cu interfaces in relation to the process temperature. Al-50vol.%Cu composite powder, where Cu particles were encapsulated in a matrix of irregular Al particles, was prepared and then sintered at various temperatures from 340 to 500 °C. Intermetallic compounds (ICs) such as CuAl2 and Cu9Al4 were formed at the Al/Cu interfaces during sintering. Microstructural analysis showed that the thickness of the interdiffusion layer, which comprised the CuAl2 and Cu9Al4 ICs, drastically increased above 400 °C. The Vickers hardness of the Al-50vol.%Cu composite sintered at 380 °C was 79 HV, which was 1.5 times that of the value estimated by the rule of mixtures. A high thermal conductivity of 150 W∙m−1∙K−1 was simultaneously obtained. This result suggests that the Al-50vol.%Cu composite material with large number of Al/Cu interfaces, as well as good mechanical strength and heat conductance, can be prepared by solid-state sintering at a low temperature.

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11

Kim, S. K., T. W. Kang, Y. T. Oh, C. Y. Hong, and T. W. Kim. "Interdiffusion behavior in GaAs/AlAs superlattices after thermal annealing." Physica Status Solidi (a) 143, no. 2 (June 16, 1994): K91—K95. http://dx.doi.org/10.1002/pssa.2211430242.

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12

Chan, Michael C. Y., Kwok-On Tsang, E. Herbert Li, and Steven P. Denbaars. "Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 642–47. http://dx.doi.org/10.1557/s1092578300003185.

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Quantum well (QW) material engineering has attracted a considerable amount of interest from many people because of its ability to produce a number of optoelectronic devices. QW composition intermixing is a thermal induced interdiffusion of the constituent atoms through the hetero-interface. The intermixing process is an attractive way to achieve the modification of the QW band structure. It is known that the band structure is a fundamental determinant for such electronic and optical properties of materials as the optical gain, the refractive index and the absorption. During the process, the as-grown square-QW compositional profile is modified to a graded profile, thereby altering the confinement profile and the subband structure in the QW. The blue-shifting of the wavelength in the intermixed QW structure is found in this process.In recent years, III-nitride semiconductors have attracted much attention. This is mainly due to their large bandgap range from 1.89eV (wurtzite InN) to 3.44eV (wurtzite GaN). InGaN/GaN quantum well structures have been used to achieve high lumens blue and green light emitting diodes. Such structures also facilitate the production of full colour LED displays by complementing the colour spectrum of available LEDs.In this paper, the effects of thermal annealing on the strained-layer InGaN/GaN QW will be presented. The effects of intermixing on the confinement potential of InGaN/GaN QWs have been theoretically analysed, with sublattices interdiffusion as the basis. This process is described by Fick’s law, with constant diffusion coefficients in both the well and the barrier layers. The diffusion coefficients depend on the annealing temperature, time and the activation energy of constituent atoms. The optical properties of intermixed InGaN/GaN QW structure of different interdiffusion rates have been theoretically analyzed for applications of novel optical devices. The photoluminescence studies and the intermixed QW modeling have been used to understand the effects of intermixing.

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13

Pascual, R., S. Saimoto, and J. M. Baribeau. "Effects of thermal processing on (SimGen)p superlattices." Canadian Journal of Physics 69, no. 3-4 (March 1, 1991): 241–45. http://dx.doi.org/10.1139/p91-040.

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In this work we report an X-ray diffraction study of thermally induced interdiffusion and strain relaxation in molecular beam epitaxy grown (SimGen)p short-period superlattices. Both rapid and furnace thermal annealings in the range 500–700 °C were used to generate structural changes in the various samples. Strain relaxation was studied by measuring the shift of (400) superlattice peaks on annealing. About half of the strain was relieved in the first few minutes of annealing. The remaining strain was relieved at a much lower rate and residual strain persisted even after several hours of heating. Also, the decay of the first order (000) superlattice peak was monitored as a function of annealing time. An initial rapid nonexponential decrease in peak intensity was observed, coincident with the sudden strain relaxation found at short annealing times. A slower, exponential decay rate was observed at longer times, so that a wavelength-dependent interdiffusion coefficient Dλ could be calculated. The variation of Dλ with the superlattice period and the effect of different substrates and buffer layers was studied. Diffusion was faster in structures alternating thin Si and thick Ge layers suggesting that migration of Si into Ge is the dominant diffusion process.

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14

Ding, Fu-Rong, P. R. Okamoto, and L. E. Rehn. "Solid-state amorphization, interdiffusion, and ion-beam mixing in Au/Zr and Ni/Zr." Journal of Materials Research 4, no. 6 (December 1989): 1444–49. http://dx.doi.org/10.1557/jmr.1989.1444.

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Inert-gas markers, Rutherford backscattering, and x-ray diffraction were used to investigate solid-state interdiffusion in Ni/Zr and Au/Zr bilayer films as a function of temperature; microstructural studies during annealing were performed in situ, in a high-voltage electron microscope. Au, in contrast to Ni, is not an anomalously fast diffuser in crystalline Zr. Nevertheless, an amorphous product phase was found in both alloy systems for reaction temperatures  550 K; heterogeneous nucleation of the amorphous phase was observed in Au/Zr. The interdiffusion data reveal two distinct Arrhenius regimes, 330–∼470 K and ∼480–550 K, with quite different apparent activation enthalpies. These thermal interdiffusion results are compared with temperature dependent studies of ion-beam mixing in similar bilayer specimens. This comparison indicates that the enhanced efficiencies observed for ion-beam mixing above ∼480 K result from the as-prepared metastable microstructurc, and are not due to radiation-enhanced diffusion.

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15

Gao, Xing Xin, Yan Hui Jia, Gong Ping Li, Jun Ping Ma, and Yun Bo Wang. "The Diffusion and Interfacial Reaction of Cu/Si(100) Systems." Advanced Materials Research 287-290 (July 2011): 2302–7. http://dx.doi.org/10.4028/www.scientific.net/amr.287-290.2302.

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The Cu thin films have been deposited on Si(100) substrates by magnetron sputtering at room temperature. The samples were heat treated by conventional thermal annealing in different temperatures: 230°C, 350°C, 450°C and 500°C. The interface reaction and atomic diffusion of the Cu films and Si substrates between as-deposited and as-annealed at different temperatures are investigated by means of Rutherford backscattering spectrometry(RBS) and X-ray diffraction(XRD). Some significant results are obtained on the following aspects: (1) According to RBS, as-deposited Cu/Si(100) samples are not found interdiffusion, and the onset temperature of interdiffusion is 230°C. With the increase of temperature, the interdiffusion becomes more apparent. (2) After annealing at 230°C, the XRD results of the samples showed formation of Cu3Si(300). As the annealing temperature increases, the other copper-silicide phases are formed. The main copper-silicide phase is Cu3Si(300) after annealing at 500°C. It means that Cu3Si is a reliable copper-silicide in a wide range for the Cu/Si(100) interface.

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16

Zhang, Li Jun, Juan Chen, Wei Min Chen, Na Ta, and Qin Li. "Interdiffusion Databanks of γ, γ′ and β Phases in NiAl-Based Ternary Systems." Diffusion Foundations 13 (November 2017): 136–66. http://dx.doi.org/10.4028/www.scientific.net/df.13.136.

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Advanced modern gas-turbine engines strongly rely on high-temperature thermal barrier coatings (TBCs) for the improved efficiency and power. Interdiffusion between the bond coat and the underlying Ni-based superalloy is one key factor limiting the lifetime of TBCs. In order to assist the engineering-oriented lifetime assessment and even design new TBCs, reliable composition- and temperature-dependent interdiffusivity databanks for γ, γ′ and β phases in different types of bond coats and Ni-based superalloys are the prerequisite. This chapter starts from a very brief introduction of the state-of-art experimental techniques and calculation methods for interdiffusivity determination in ternary systems. After that, the status of the interdiffusion databanks of γ, γ′ and β phases in NiAl-based ternary systems is then summarized, with a special focus on the demonstration of interdiffusivity data measured by means of single-phase diffusion couple/multiple techniques in combination with Matano-Kirkaldy method or numerical inverse method. Several typical results for NiAl-based γ, γ′ and β phases are also given. Finally, two examples of successful applications of the available interdiffusion databanks of ternary NiAl-based γ, γ′ and β phases are presented. One lies in the Re-substitutional element searching in potential new-generation Ni-based superalloys, while the other is the phase-field modeling of interdiffusion microstructure in ternary mode NiAlCr-based TBCs without/with the effect of temperature gradient.

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Mateus, R., M. Dias, V. Livramento, D. Nunes, P. A. Carvalho, K. Hanada, and J. B. Correia. "Elemental interdiffusion in W-Ta composites developed for fusion applications." Microscopy and Microanalysis 19, S4 (August 2013): 123–24. http://dx.doi.org/10.1017/s1431927613001232.

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Tungsten (W) was select for an extensive use in nuclear fusion devices due to its low neutron activation, high melting point and sputtering threshold as well as low hydrogen inventory. Nevertheless, W is brittle at low and moderate temperatures, which results in abnormal thermal stress, component fracture and extra erosion under reactor operation due to inherent thermal cycling events. An attractive way to solve these problems involves the addition of other refractory metals in the W matrix and tantalum (Ta) is a natural candidate. It has a high ductility, toughness and radiation resistance relative to those of W and transmutes to W by high-energy neutron irradiation. Recently, IST proposed the production of W-Ta composite by mechanical synthesis.The composite should reveal the individual properties of the pristine phases as long as the interdiffusion between the components is significantly avoided during the consolidation/sintering route of the final material. Sintering operations at temperatures higher than 1300ºC lead to significant improvements in the final densification and thermal conductivity of the composites, which is crucial for fusion applications. However, W and Ta interdiffusion can be relevant above 1300ºC, mainly due to diffusion of W into Ta, and the aim of the present work is to control the mechanism.W-Taf composites presenting 10 and 20 at.% of Ta where produced by alloying W powders and Ta fibres with a planetary ball milling route (MA) and by consolidating the mixture with spark plasma sintering (SPS) in the 1300-1600ºC temperature range. The final densifications remain fairly constant in both composites after sintering at different temperatures (83 to 87%) and the elemental interdiffusion remained low at 1300ºC. Nevertheless, the diffusivity of W in Ta became significant at 1600ºC, leading to the formation of a solid solution zone with a stoichiometry close to W16Ta84. The mechanism was followed by scanning electron and energy-dispersive X-ray spectroscopies (SEM/EDS; Figures 1 and 2, Table 1). Fabrication routes yielding high densifications and low interdiffusion are currently under investigation.The work has been supported by the Contract of Association between Euratom and IST and by the Fund. Ciência e a Tecnologia contracts PTDC/CTM/100163/2008, Pest-OE/SADG/LA0010/2011 and PEST-OE/CTM-UI0084/2011.

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Yu, Soon Jae, Hajime Asahi, Shuichi Emura, Shun‐ichi Gonda, and Kiichi Nakashima. "Raman scattering study of thermal interdiffusion in InGaAs/InP superlattice structures." Journal of Applied Physics 70, no. 1 (July 1991): 204–8. http://dx.doi.org/10.1063/1.350310.

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Cao, B. S., and M. K. Lei. "Nonlinear interdiffusion in binary nanometer-scale multilayers submitted to thermal annealing." Thin Solid Films 516, no. 8 (February 2008): 1843–48. http://dx.doi.org/10.1016/j.tsf.2007.08.127.

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Kim-Ngan, N. T. H., A. G. Balogh, J. D. Meyer, J. Brötz, S. Hummelt, M. Zając, T. Ślęzak, and J. Korecki. "Thermal and irradiation induced interdiffusion in Fe3O4/MgO(001) thin film." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 267, no. 8-9 (May 2009): 1484–88. http://dx.doi.org/10.1016/j.nimb.2009.01.073.

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21

Cardoso, S., P. P. Freitas, C. de Jesus, P. Wei, and J. C. Soares. "Spin-tunnel-junction thermal stability and interface interdiffusion above 300 °C." Applied Physics Letters 76, no. 5 (January 31, 2000): 610–12. http://dx.doi.org/10.1063/1.125833.

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Gao, Q., H. H. Tan, L. Fu, and C. Jagadish. "Effects of thermal stress on interdiffusion in InGaAsN/GaAs quantum dots." Applied Physics Letters 84, no. 24 (June 14, 2004): 4950–52. http://dx.doi.org/10.1063/1.1760886.

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Kammerer, C. C., M. Fu, Le Zhou, Dennis D. Keiser, and Yong Ho Sohn. "Interdiffusion and Reaction between Pure Magnesium and Aluminum Alloy 6061." Defect and Diffusion Forum 364 (June 2015): 174–81. http://dx.doi.org/10.4028/www.scientific.net/ddf.364.174.

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Using solid-to-solid couples investigation, this study characterized the reaction products evolved and quantified the diffusion kinetics when pure Mg bonded to AA6061 is subjected to thermal treatment at 300°C for 720 hours, 350°C for 360 hours, and 400°C for 240 hours. Characterization techniques include optical microscopy, scanning electron microscopy with X-ray energy dispersive spectroscopy, and transmission electron microscopy. Parabolic growth constants were determined for γ-Mg17Al12, β-Mg2Al3, and the elusive ε-phase. Similarly, the average effective interdiffusion coefficients of major constituents were calculated for Mg (ss), γ-Mg17Al12, β-Mg2Al3, and AA6061. The activation energies and pre-exponential factors for both parabolic growth constant and average effective interdiffusion coefficients were computed using the Arrhenius relationship. The activation energy for growth of γ-Mg17Al12 was significantly higher than that for β-Mg2Al3 while the activation energy for interdiffusion of γ-Mg17Al12 was only slightly higher than that for β-Mg2Al3. Comparisons are made between the results of this study and those of diffusion studies between pure Mg and pure Al [1] to examine the influence of alloying additions in AA6061.

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Indacochea, J. Ernesto, Ira Bloom, Michael Krumpelt, and Thomas G. Benjamin. "A comparison of two aluminizing methods for corrosion protection in the wet seal of molten carbonate fuel cells." Journal of Materials Research 13, no. 7 (July 1998): 1834–39. http://dx.doi.org/10.1557/jmr.1998.0260.

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The corrosion behavior of aluminized Type 310S stainless steel (SS) in the wet seal of molten carbonate fuel cells was investigated. Coupons of Type 310S SS were aluminized by two different aluminizing methods: thermal spray and slurry-coating. In both types of samples Fe and Cr diffused readily into the Al layer at 650 °C. At first this interdiffusion is limited to the interfacial area. With time, Fe and Cr aluminides precipitate in the Al layer. The slurry-coated layer contains a higher concentration of FeAl and Fe3Al than does the thermal spray layer. Consequently, the slurry-coated layer also displays a greater degree of corrosion than the thermal spray layer.

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Sun, Li Dong, Hong Bo Guo, He Fei Li, and Sheng Kai Gong. "Hf Modified NiAl Bond Coat for Thermal Barrier Coating Application." Materials Science Forum 546-549 (May 2007): 1777–80. http://dx.doi.org/10.4028/www.scientific.net/msf.546-549.1777.

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The Hf doped NiAl coatings were co-evaporated and co-deposited onto the superalloy substrate by electron beam physical vapor deposition (EB-PVD). During heat-treatment, HfO2 was formed on the NiAl coatings. And, Hf enriched at the interface between the coating and the interdiffusion zone, which could prevent outward diffusion of elements in the substrate. The NiAl coating doped with 0.5% Hf effectively improved the high temperature oxidation resistance compared to the Hf free NiAl coating and the high Hf content coating. Also, the addition of Hf to the coating contributed to enhancing the adherence of TGO layer to coating.

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Liu, Xingquan, Ning Li, Xiaoshuang Chen, Wei Lu, Wenlan Xu, XianZhang Yuan, Na Li, et al. "Wavelength Tuning of GaAs/AlGaAs Quantum-Well Infrared Photodetectors by Thermal Interdiffusion." Japanese Journal of Applied Physics 38, Part 1, No. 9A (September 15, 1999): 5044–45. http://dx.doi.org/10.1143/jjap.38.5044.

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Ai-Qing Jiang, Chang-Zheng Sun, Zhi-Biao Hao, and Jian-Hua Wang. "Novel laser structures based on MQW interdiffusion using rapid thermal annealing technique." IEEE Journal of Selected Topics in Quantum Electronics 4, no. 4 (1998): 736–40. http://dx.doi.org/10.1109/2944.720486.

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Zagula-Yavorska, Maryana, Jan Sieniawski, Ryszard Filip, and Marcin Drajewicz. "The Effect of the Aluminide Coating on the Thermal Properties and Oxidation Resistance of Inconel 625 Ni-Base Superalloy." Solid State Phenomena 227 (January 2015): 313–16. http://dx.doi.org/10.4028/www.scientific.net/ssp.227.313.

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An investigation was conducted to synthesize βNiAl coating on the nickel based superalloy Inconel 625 in the low activity chemical vapor deposition process (CVD). The deposition was carried out for 8 hours at 1050°C using the BPXpro3252 IonBond company equipment. Surface morphology and cross-section microstructure of the diffusion coating were studied and compared using an optical microscope, an X-ray diffractometer and a scanning electron microscope (SEM) equipped with an energy dispersive spectroscope. It was found that 29 μm thick aluminide coating consisted of two layers: an outer one and the inner interdiffusion one. The outer layer consisted of the βNiAl phase. The inner one consisted of the βNiAl phase with chromium, molybdenum and niobium carbides (M23C6 and MC type) inclusions. Outer layer hardness was about 564 HV0.002 while interdiffusion layer hardness was about 725 HV0.002. Thermal diffusivity of Inconel 625 superalloy with and without coating was measured using a NETZSCH model 427 laser flash diffusivity apparatus. The thermal diffusivity measurements were conducted in the argon atmosphere at the temperature interval 20 - 1200 oC. Thermal diffusivity of the uncoated Inconel 625 Ni-base superalloy at the room temperature is about 2 mm2/s, while for the coated superalloy thermal diffusivity is about 2.8 mm2/s. The increase of the temperature from 20 to 1200 oC leads to the increase of the thermal diffusivity of the coated sample from 2.8 to 5.6 mm2/s. Cyclic oxidation tests for both coated and uncoated superalloys were performed at 1100°C for 1000 h in the air atmosphere. The aluminized samples exhibited a small mass increase and the α-Al2O3 scale was formed during the oxidation test.

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Mehrer, Helmut, Martin Luckabauer, and Wolfgang Sprengel. "Self- and Solute Diffusion, Interdiffusion and Thermal Vacancies in the System Iron-Aluminium." Defect and Diffusion Forum 333 (January 2013): 1–25. http://dx.doi.org/10.4028/www.scientific.net/ddf.333.1.

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Starting from fundamental aspects of thermal vacancies and solid-state self-and solute diffusion, this paper reviews procedures for tracer-and interdiffusion studies and of the major techniques for vacancy studies by dilatometry and positron annihilation in metals. Equilibrium vacancy and diffusion studies performed on pure iron and aluminium are mentioned at first. We also comment some peculiarities of solute diffusion in aluminium. Positron annihilation and differential dilatometry studies for Fe-Al alloys with various compositions are summarized and new experimental studies by the authors are reported for vacancy migration in Fe61Al39. All these studies indicate a relatively high fraction of thermal vacancies with relatively low mobility in this type of iron-aluminides as compared to pure metals. Tracer diffusion of iron and of several substitutional solutes such as Co, Ni, Cr, Mn, Zn, and In in Fe-Al from the Münster laboratory are summarized. The diffusion studies of Fe-Al cover various alloy composition between Fe3Al and FeAl and several structures such as A2, B2 and D03. Interdiffusion coefficients obtained from diffusion couples between Fe-Al alloys are discussed together with Fe tracer diffusion data. The Darken-Manning equation is used to deduce Al diffusivities therefrom. The latter are hardly accessible to radiotracer experiments due to a lack of a suitable Al tracer. Diffusion of Al is slightly faster than diffusion of Fe indicating diffusion mechanisms with coupled jumps of Fe and Al atoms.

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Kuhnigk, Justus, Daniel Raps, Tobias Standau, Marius Luik, Volker Altstädt, and Holger Ruckdäschel. "Insights into the Bead Fusion Mechanism of Expanded Polybutylene Terephthalate (E-PBT)." Polymers 13, no. 4 (February 15, 2021): 582. http://dx.doi.org/10.3390/polym13040582.

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Expandable polystyrene (EPS) and expanded polypropylene (EPP) dominate the bead foam market. As the low thermal performance of EPS and EPP limits application at elevated temperatures novel solutions such as expanded polybutylene terephthalate (E-PBT) are gaining importance. To produce parts, individual beads are typically molded by hot steam. While molding of EPP is well-understood and related to two distinct melting temperatures, the mechanisms of E-PBT are different. E-PBT shows only one melting peak and can surprisingly only be molded when adding chain extender (CE). This publication therefore aims to understand the impact of thermal properties of E-PBT on its molding behavior. Detailed differential scanning calorimetry was performed on neat and chain extended E-PBT. The crystallinity of the outer layer and center of the bead was similar. Thus, a former hypothesis that a completely amorphous bead layer enables molding, was discarded. However, the incorporation of CE remarkably reduces the crystallization and re-crystallization rate. As a consequence, the time available for interdiffusion of chains across neighboring beads increases and facilitates crystallization across the bead interface. For E-PBT bead foams, it is concluded that sufficient time for polymer interdiffusion during molding is crucial and requires adjusted crystallization kinetics.

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31

Khadzhai, G. Ya, S. R. Vovk, R. V. Vovk, E. S. Gevorkyan, M. V. Kislitsa, S. V. Dukarov, S. I. Petrushenko, A. Feher, and O. V. Dobrovolskiy. "Structure-induced features of transport processes in an electroconsolidated FeNi composite." Modern Physics Letters B 35, no. 24 (July 30, 2021): 2150425. http://dx.doi.org/10.1142/s021798492150425x.

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The structure and processes of mass, charge and heat transfer are investigated in an equiatomic Fe–Ni composite fabricated by electroconsolidation using the spark plasma sintering (SPS) technology. The system contains regions of almost pure Fe and Ni, separated by areas with variable concentration of components, formed in consequence of the interdiffusion in the electroconsolidation process. The interdiffusion coefficient of the Fe–Ni system has been revealed to be significantly higher than that of an alloy of a similar composition at the same temperature, which is likely the result of the employed SPS technology and the enhanced diffusion along the grain boundaries. The concentration dependence of the interdiffusion coefficient passes through a maximum at a Ni concentration of [Formula: see text]70 at.%. The electrical and thermal conductivity of the studied system is significantly higher than that of an alloy of the same composition. The temperature dependence of the resistivity of the sample in the range 5–300 K is due to the scattering of electrons by defects and phonons, and the scattering of electrons by phonons fits well to the Bloch–Grüneisen–Wilson relation. The boundaries of the conductivity of the investigated composite correspond to the Hashin–Shtrikman boundaries for a three-phase system, if Fe, Ni and the FeNi alloy are selected as phases.

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32

Kalha, C., M. Reisinger, P. K. Thakur, T. L. Lee, S. Venkatesan, M. Isaacs, R. G. Palgrave, J. Zechner, M. Nelhiebel, and A. Regoutz. "Evaluation of the thermal stability of TiW/Cu heterojunctions using a combined SXPS and HAXPES approach." Journal of Applied Physics 131, no. 16 (April 28, 2022): 165301. http://dx.doi.org/10.1063/5.0086009.

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Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress or at best prevent the interdiffusion between the copper metallization interconnects and the surrounding silicon substructure. The binary pseudo-alloy of titanium–tungsten (TiW), with >70 at. % W, is a well-established copper diffusion barrier but is prone to degradation via the out-diffusion of titanium when exposed to high temperatures ([Formula: see text]400 [Formula: see text]C). Here, the thermal stability of physical vapor deposited TiW/Cu bilayer thin films in Si/SiO[Formula: see text](50 nm)/TiW(300 nm)/Cu(25 nm) stacks were characterized in response to annealing at 400 [Formula: see text]C for 0.5 h and 5 h, using a combination of soft and hard x-ray photoelectron spectroscopy and transmission electron microscopy. Results show that annealing promoted the segregation of titanium out of the TiW and interdiffusion into the copper metallization. Titanium was shown to be driven toward the free copper surface, accumulating there and forming a titanium oxide overlayer upon exposure to air. Annealing for longer timescales promoted a greater out-diffusion of titanium and a thicker oxide layer to grow on the copper surface. However, interface measurements suggest that the diffusion is not significant enough to compromise the barrier integrity, and the TiW/Cu interface remains stable even after 5 h of annealing.

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33

Lee, Eun Kyu, and Seung-Yun Lee. "Thermal stability and microstructure of germanium antimony telluride thin films under interdiffusion conditions." Japanese Journal of Applied Physics 57, no. 8 (July 12, 2018): 081201. http://dx.doi.org/10.7567/jjap.57.081201.

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34

Cardenas, J., S. Hatzikonstantinidou, S. L. Zhang, B. G. Svensson, and C. S. Petersson. "Interdiffusion and phase formation during thermal processing of Co/Ti/Si(100) structures." Physica Scripta T54 (January 1, 1994): 198–201. http://dx.doi.org/10.1088/0031-8949/1994/t54/049.

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35

Chan, Michael C. Y., Elaine M. T. Cheung, and E. Herbert Li. "A tunable blue light emission of InGaN/GaN quantum well through thermal interdiffusion." Materials Science and Engineering: B 59, no. 1-3 (May 1999): 283–87. http://dx.doi.org/10.1016/s0921-5107(98)00342-0.

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36

Rautiainen, Antti, Vesa Vuorinen, Jue Li, and Mervi Paulasto-Kröckel. "Vertical cracking of Cu-Sn solid-liquid interdiffusion bond under thermal shock test." Materials Today: Proceedings 4, no. 7 (2017): 7093–100. http://dx.doi.org/10.1016/j.matpr.2017.08.002.

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37

O’Brien, S., J. R. Shealy, V. K. F. Chia, and J. Y. Chi. "Selective interdiffusion of GaInAs/AlInAs quantum wells by SiO2encapsulation and rapid thermal annealing." Journal of Applied Physics 68, no. 10 (November 15, 1990): 5256–61. http://dx.doi.org/10.1063/1.347194.

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38

Huang, Ting-Chia, Vanessa Smet, Satomi Kawamoto, Markondeya R. Pulugurtha, and Rao R. Tummala. "Accelerated Metastable Solid–liquid Interdiffusion Bonding with High Thermal Stability and Power Handling." Journal of Electronic Materials 47, no. 1 (September 11, 2017): 368–77. http://dx.doi.org/10.1007/s11664-017-5779-z.

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39

Park, Sungkyun, David J. Keavney, and Charles M. Falco. "Interdiffusion and thermal stability in magnetic tunnel junction ferromagnet/insulator/ferromagnet trilayer structures." Journal of Applied Physics 95, no. 6 (March 15, 2004): 3037–40. http://dx.doi.org/10.1063/1.1650533.

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40

Eriksson, Robert, Kang Yuan, Sten Johansson, Ru Lin Peng, and Xin Hai Li. "Life Prediction of High-Temperature MCrAlY Coatings Based on Microstructural Observations." Advanced Materials Research 922 (May 2014): 143–48. http://dx.doi.org/10.4028/www.scientific.net/amr.922.143.

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Thermal barrier coatings are commonly used in gas turbines for protection against high tem-perature and oxidation. Life prediction of oxidation protective coatingsmay be done bymicrostructure-based techniques such as -depletion based life criteria. In this study, a thermal barrier coating sys-tem, with an overlay NiCoCrAlY coating as bond coat, was oxidised up to 10000 h at 900 C. Themicrostructure was studied and related to Al depletion. It was found that a -depletion based lifecriterion could not be used for the studied coating composition and temperature as it would be tooconservative. A 0-depletion based model was instead suggested and supported by interdiffusion sim-ulation.

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41

Kolaklieva, Lilyana, Roumen Kakanakov, Ts Marinova, and G. Lepoeva. "Effect of the Metal Composition on the Electrical and Thermal Properties of Au/Pd/Ti/Pd Contacts to p-Type SiC." Materials Science Forum 483-485 (May 2005): 749–52. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.749.

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X-ray photoelectron spectroscopy is used to study the effect of the metal composition on the electrical and thermal properties of Au/Pd/Ti/Pd contacts to SiC. No reactions and interdiffusion between the contact components and SiC are found for the as-deposited contact layer. The steep metal/SiC interface corresponds to the Schottky behaviour observed before the annealing. Annealing at 900 oC causes Pd2Si formation at the SiC interface and ohmic properties appearance. Due to the addition of Ti to the contact composition the carbon resulting from the SiC dissociation during annealing is completely consumed, which leads to improvement of the thermal stability.

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42

Xie, Feng, Dingjun Li, and Weixu Zhang. "Long-Term Failure Mechanisms of Thermal Barrier Coatings in Heavy-Duty Gas Turbines." Coatings 10, no. 11 (October 23, 2020): 1022. http://dx.doi.org/10.3390/coatings10111022.

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Thermal barrier coatings serve as thermal insulation and antioxidants on the surfaces of hot components. Different from the frequent thermal cycles of aero-engines, a heavy-duty gas turbine experiences few thermal cycles and continuously operates with high-temperature gas over 8000 h. Correspondingly, their failure mechanisms are different. The long-term failure mechanisms of the thermal barrier coatings in heavy-duty gas turbines are much more important. In this work, two long-term failure mechanisms are reviewed, i.e., oxidation and diffusion. It is illustrated that the growth of a uniform mixed oxide layer and element diffusion in thermal barrier coatings are responsible for the changes in mechanical performance and failures. Moreover, the oxidation of bond coat and the interdiffusion of alloy elements can affect the distribution of elements in thermal barrier coatings and then change the phase component. In addition, according to the results, it is suggested that suppressing the growth rate of uniform mixed oxide and oxygen diffusion can further prolong the service life of thermal barrier coatings.

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LITA, B., R. S. GOLDMAN, J. D. PHILLIPS, and P. K. BHATTACHARYA. "INTERDIFFUSION, SEGREGATION, AND DISSOLUTION IN InAs/GaAs QUANTUM DOT SUPERLATTICES." Surface Review and Letters 07, no. 05n06 (October 2000): 539–45. http://dx.doi.org/10.1142/s0218625x00000634.

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We have investigated the effects of in situ and ex situ post-growth thermal annealing on the organization of InAs/GaAs quantum dot superlattices, which consist of regular arrays of InAs islands embedded in GaAs. Using large-scale and high resolution cross-sectional scanning tunneling microscopy, we have mapped out the spatial distributions of the island arrays and the positions of indium atoms located both vertically and laterally between the island arrays. Both in situ and ex situ annealing induce vertical and lateral dissolution of the islands, which in turn significantly affects the organization of the island arrays. Annealing-induced variations in the positions of the indium atoms between the island arrays have enabled us to directly measure indium–gallium interdiffusion and indium segregation lengths. We discuss the effects of residual strain on these processes, which are critical for the design of novel devices based upon semiconductor nanostructures.

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44

Kimura, Yoshisato, Mototsugu Ohsaki, Hiroki Fujita, and Yoshinao Mishima. "Phase Equilibria and Atomic Diffusion in the Ir/CoAl System." Materials Science Forum 561-565 (October 2007): 477–80. http://dx.doi.org/10.4028/www.scientific.net/msf.561-565.477.

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Aiming for the design of simple thermal coatings including Ir as a diffusion barrier layer with B2 aluminides bond coat such as CoAl, diffusion behavior and phase equilibria at the Ir/CoAl interface have been investigated to understand thermal and chemical stability of the interface. Diffusion couples were prepared with various conditions of Ir, plate, powder and film deposited to examine the effects on diffusion behavior. Moreover, the interdiffusion coefficient of binary Ir-M in the Ir solid solution, DIr-M was determined using Boltzmann-Matano method, where M is selected form elements used in heat resistant alloys. The potential of Ir as a diffusion barrier has been evaluated particularly against diffusion of Al.

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45

Kuchuk, Andrian V., M. Guziewicz, Renata Ratajczak, Marek Wzorek, V. P. Kladko, and Anna Piotrowska. "Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers." Materials Science Forum 645-648 (April 2010): 737–40. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.737.

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The reliability of Ni2Si/n-SiC ohmic contacts with Au overlayer either without or with Ta-Si-N diffusion barrier was investigated after long-time aging in air at 400oC and rapid thermal annealing in Ar up to 800oC. It is shown that aging of the Au/Ni2Si/n-SiC contacts in air at 400oC resulted in complete degradation due to both oxygen penetration and interdiffusion/reaction processes. In contrast, only a small change in properties was detected on the contacts annealed in Ar at 800°C. The stability of both electrical and structural properties of Au/TaSiN/Ni2Si/n-SiC thermally stressed contacts at different conditions points out their superior thermal stability.

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46

Zhu, Li Kui, Xiao Ping Zhou, Ying Ze Fang, and Feng Xu. "Ni-Cr-Al Coating Layer Modified by Friction Stir Processing - Analysis of Microstructure and Element Diffusion." Advanced Materials Research 1095 (March 2015): 616–19. http://dx.doi.org/10.4028/www.scientific.net/amr.1095.616.

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Flame thermal spray Ni-Cr-Al coating layer on Q235 steel modified by friction stir processing(FSP) was studied. FSP function area formed a uniform density composite layer, of which internal coating layer formed superfine crystal structure and crystal structure of substrate changed, improved the mechanical properties. The plastic deformation generated by friction stir processing directly influenced the microstructure and mechanical properties. Dynamic recrystallization occurred within a certain range of plastic deformation, temperature and plastic deformation interlocking effect provided advantageous channel to fast element interdiffusion.

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47

Vasilkova, E. I., A. N. Klochkov, A. N. Vinichenko, N. I. Kargin, and I. S. Vasil'evskii. "Comparison of the thermal interdiffusion phenomena in InGaAs/GaAs and InGaAs/AlGaAs strained heterostructures." Surfaces and Interfaces 29 (April 2022): 101766. http://dx.doi.org/10.1016/j.surfin.2022.101766.

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48

Agarwal, A., M. Srujan, S. Chakrabarti, and S. Krishna. "Investigation of thermal interdiffusion in InAs/In0.15Ga0.85As/GaAs quantum dot-in-a-well heterostructures." Journal of Luminescence 143 (November 2013): 96–100. http://dx.doi.org/10.1016/j.jlumin.2013.04.030.

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49

Gillin, W. P., K. P. Homewood, L. K. Howard, and M. T. Emeny. "Thermal interdiffusion in InGaAs/GaAs strained quantum wells as a function of doping density." Superlattices and Microstructures 9, no. 1 (January 1991): 39–42. http://dx.doi.org/10.1016/0749-6036(91)90089-a.

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50

Brunner, K., G. Abstreiter, M. Walther, G. Böhm, and G. Trankle. "Optical characterization of GaAs/AlGaAs nanostructures fabricated by focussed laser beam induced thermal interdiffusion." Surface Science 267, no. 1-3 (January 1992): 218–22. http://dx.doi.org/10.1016/0039-6028(92)91124-t.

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