Journal articles: 'Terahertz electronics'

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O, Kenneth. "Affordable terahertz electronics." IEEE Microwave Magazine 10, no. 3 (May 2009): 113–16. http://dx.doi.org/10.1109/mmm.2009.932070.

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Shur, Michael. "Terahertz Sensing Technology." International Journal of High Speed Electronics and Systems 24, no. 01n02 (March 2015): 1550001. http://dx.doi.org/10.1142/s0129156415500019.

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Sensing applications of THz technology include applications for space exploration, detection of concealed objects, explosive identification, and THz cancer detection. This paper will review these and other emerging applications and existing and potential THz sources and detectors, including photonic and electronic THz devices, such as plasmonic field effect transistors capable of detecting and emitting THz radiation. Plasma wave electronics devices demonstrated THz detection using GaAs-based and GaN-based HEMTs, Si MOS, SOI, and FINFETs and FET arrays. This technology has potential to become a dominant THz electronics technology.

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Song, Ho-Jin. "Packages for Terahertz Electronics." Proceedings of the IEEE 105, no. 6 (June 2017): 1121–38. http://dx.doi.org/10.1109/jproc.2016.2633547.

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Shur, M. "Plasma wave terahertz electronics." Electronics Letters 46, no. 26 (2010): S18. http://dx.doi.org/10.1049/el.2010.8457.

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Shur, Michael S., and Victor Ryzhii. "Plasma Wave Electronics." International Journal of High Speed Electronics and Systems 13, no. 02 (June 2003): 575–600. http://dx.doi.org/10.1142/s0129156403001831.

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Plasma waves are oscillations of electron density in time and space. In deep submicron field effect transistors plasma wave frequencies lie in the terahertz range and can be tuned by applied gate bias. Since the plasma wave frequency is much larger that the inverse electron transit time in the device, it is easier to reach "ballistic" regimes for plasma waves than for electrons moving with drift velocities. In the ballistic regime, no collisions of electrons with impurities or lattice vibrations occur on a time scale on the order of the plasma oscillation period, and the device channel acts as a resonant cavity for the plasma waves, making possible tunable resonant detection or even emission of the electromagnetic radiation in the terahertz range. We review the theory of plasma waves in field effect transistors; discuss instabilities of these waves in different device structures and their applications for detection and generation of the terahertz radiation.

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Huang, Yi Hu, Man Hu, Gui Hua He, and Wen Long Liu. "Terahertz Time-Domain Spectroscopy Technology and its Application in the Field of Pesticide." Key Engineering Materials 561 (July 2013): 640–45. http://dx.doi.org/10.4028/www.scientific.net/kem.561.640.

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Terahertz wave lies between far-infrared and microwave in electromagnetic spectrum with frequency form 0.1 THz to10 THz. Terahertz is believed to be the master technology of electronics and information science, and to be the bridge between micro electronics and macro wavelength. THz has formed a worldwide research climax. This paper introduces the main characters of Terahertz wave, Terahertz time-domain spectroscopy technology and its application researches, especially detailed the researches in pesticide spectra.

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Tamošiūnas, V. "New trends in terahertz electronics." Lithuanian Journal of Physics 46, no. 2 (2006): 131–45. http://dx.doi.org/10.3952/lithjphys.46217.

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Naftaly, Mira, Satyajit Das, John Gallop, Kewen Pan, Feras Alkhalil, Darshana Kariyapperuma, Sophie Constant, Catherine Ramsdale, and Ling Hao. "Sheet Resistance Measurements of Conductive Thin Films: A Comparison of Techniques." Electronics 10, no. 8 (April 17, 2021): 960. http://dx.doi.org/10.3390/electronics10080960.

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Conductive thin films are an essential component of many electronic devices. Measuring their conductivity accurately is necessary for quality control and process monitoring. We compare conductivity measurements on films for flexible electronics using three different techniques: four-point probe, microwave resonator and terahertz time-domain spectroscopy. Multiple samples were examined, facilitating the comparison of the three techniques. Sheet resistance values at DC, microwave and terahertz frequencies were obtained and were found to be in close agreement.

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GONG, Yubin, Qing ZHOU, Hanwen TIAN, Jingchao TANG, Kaicheng WANG, Yaxin ZHANG, Bo ZHANG, and Diwei LIU. "Terahertz radiation sources based on electronics." Journal of Shenzhen University Science and Engineering 36, no. 2 (2019): 111. http://dx.doi.org/10.3724/sp.j.1249.2019.02111.

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Li, Min, Zheng Liu, Yu Xia, Mingyang He, Kangwen Yang, Shuai Yuan, Ming Yan, Kun Huang, and Heping Zeng. "Terahertz Time-of-Flight Ranging with Adaptive Clock Asynchronous Optical Sampling." Sensors 23, no. 2 (January 8, 2023): 715. http://dx.doi.org/10.3390/s23020715.

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We propose and implement a terahertz time-of-flight ranging system based on adaptive clock asynchronous optical sampling, where the timing jitter is corrected in real time to recover the depth information in the acquired interferograms after compensating for laser instabilities using electronic signal processing. Consequently, the involved measurement uncertainties caused by the timing jitter during the terahertz sampling process and the noise intensity of the terahertz electric field have been reduced by the utilization of the adaptive clock. The achieved uncertainty range is about 2.5 μm at a 5 cm distance after averaging the acquisition time of 1876 ms 5000 times, showing a significant improvement compared with the asynchronous optical sampling using a constant clock. The implemented terahertz ranging system only uses free-running mode-locked lasers without any phase-locked electronics, and this favors simple and robust operations for subsequent applications that extend beyond the laboratory conditions.

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Li, Y. Y., J. Q. Liu, F. Q. Liu, and Z. G. Wang. "High performance terahertz quantum cascade lasers." Terahertz Science and Technology 13, no. 2 (June 2020): 61–72. http://dx.doi.org/10.1051/tst/2020132061.

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Terahertz region is the electromagnetic gap between the infrared optoelectronics and the high frequency electronics, which is of broad prospects in applications. The application requirements drive the rapid development in Terahertz technologies including sources, detectors and systems. In the last two decades, quantum cascade laser has made great progress as one of the most promising terahertz sources. In this paper, we present the development of terahertz quantum cascade lasers in our group.

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PARK, YOON-SOO. "RECENT ADVANCES AND FUTURE TRENDS IN MODERN ELECTRONICS." International Journal of High Speed Electronics and Systems 10, no. 01 (March 2000): 1–4. http://dx.doi.org/10.1142/s0129156400000039.

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We discuss recent advances in various fields of modern electronic and optoelectronic devices. The major trends in electronics point to the nanoscale, to giga to terahertz operation, and to very low power consumption. These trends will require the development of advanced physics concepts and new device processing and characterization techniques. Various novel material systems will be researched. These approaches will greatly improve the performance of the electronic devices, and novel devices will further improve the level of human life as they have done before.

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Tantiwanichapan, Khwanchai, Jeff DiMaria, Shayla N. Melo, and Roberto Paiella. "Graphene electronics for terahertz electron-beam radiation." Nanotechnology 24, no. 37 (August 23, 2013): 375205. http://dx.doi.org/10.1088/0957-4484/24/37/375205.

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Samy, Omnia, and Amine El Moutaouakil. "Comparing the plasmon dispersion in graphene and MoS₂ nanoribbons array under Electromagnetic excitation." Journal of Physics: Conference Series 2751, no. 1 (April 1, 2024): 012015. http://dx.doi.org/10.1088/1742-6596/2751/1/012015.

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Abstract Terahertz properties of different materials have been recently studied due to their wide applications in optoelectronics, industry, product inspection, and spectroscopy. Terahertz frequency applications are promising for the medical field as they are considered safe frequencies. Previous terahertz plasma response focused on 2D materials like graphene and transition metal dichalcogenides (TMDs) due to their favourable electronic properties, high electric conductivity, and their band gap characteristics, so they can be used in electronic devices. Some of these materials showed good biocompatibility so they can be used in biomedical applications. Since graphene has zero band gap, researchers are continuously exploring methods to increase its band gap to be used in electronics. Graphene heterostructures or metamaterials are ways to enhance graphene characteristics for specific applications. This work investigates the possibility of using MoS2 with graphene in THz applications. The plasmon dispersion for graphene and MoS2 nanoribbon array structure is compared. Both graphene and MoS2 behave differently in response to terahertz radiation due to their different band gaps. The results showed that MoS2 exhibits a plasmonic response in the THz region at high carrier concentrations. This opens up opportunities for MoS2 to be employed in THz sensors, both independently and in conjunction with graphene within heterostructures or metamaterials for power sources and detectors. These advancements hold significant potential for the future THz imaging and communication technologies.

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Baiburin, V. B., A. S. Rozov, N. Yu Khorovodova, A. S. Ershov, and A. A. Nikiforov. "A new approach to the development of perspective compact frequency multipliers of the subterahertz and terahertz bands for on-board electronic equipment." Radioengineering 8 (2021): 111–21. http://dx.doi.org/10.18127/j00338486-202108-12.

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Currently, the increasing interest of researchers is attracted by the theoretical and practical problems of mastering the sub-terahertz and terahertz frequency range. Electronic devices operating in these ranges find effective applications in various fields of science and technology: aerospace equipment, security systems, spectroscopy, medicine, biology and many others. The purpose of this work is to focus on a frequency multiplication device that allows using basic sources of relatively low frequency generation to enter the terahertz frequency range. The results of recent years obtained both on the basis of solid-state effects and with the help of vacuum electronics, in particular, magnetron-type devices, which are characterized by compactness, high resistance to radiation loads, mechanical influences, which is important for on-board equipment, are considered. It is known that at high frequencies, vacuum devices require super-precision manufacturing of decelerating systems. This is essentially the main difficulty. The article proposes a new approach based on the hypothesis of P.L. Kapitsa, which allows to significantly simplify the anode structure of a magnetron multiplier with an acceptable level of output parameters. The achievements of recent years in the field of creating sub-terahertz and terahertz frequency multipliers, mainly for on-board equipment of mobile platforms, taking into account the requirements of aerospace systems, first of all, are noted.

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Fujishima, M. "(Invited) Terahertz CMOS Electronics for Future Mobile Applications." ECS Transactions 61, no. 6 (March 19, 2014): 43–50. http://dx.doi.org/10.1149/06106.0043ecst.

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Cha, SeungNam, Jung Han Choi, Chan Wook Baik, Hyung Bin Sohn, Joonhyock Choi, Ohyun Kim, and Jong Min Kim. "Perspectives on Nanotechnology for RF and Terahertz Electronics." IEEE Transactions on Microwave Theory and Techniques 59, no. 10 (October 2011): 2709–18. http://dx.doi.org/10.1109/tmtt.2011.2163728.

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Banks, Peter A., Jefferson Maul, Mark T. Mancini, Adam C. Whalley, Alessandro Erba, and Michael T. Ruggiero. "Thermoelasticity in organic semiconductors determined with terahertz spectroscopy and quantum quasi-harmonic simulations." Journal of Materials Chemistry C 8, no. 31 (2020): 10917–25. http://dx.doi.org/10.1039/d0tc01676d.

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The thermomechanical response of organic semiconducting solids – an essential aspect to consider for the design of flexible electronics – was determined using terahertz vibrational spectroscopy and quantum quasiharmonic approximation simulations.

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Kumar, M., V. Kumar, K. Singh, S. Dubey, P. K. Tiwari, K. S. Seong, and S. H. Park. "A review on teratronics: from present state to future." Digest Journal of Nanomaterials and Biostructures 16, no. 4 (December 2021): 1365–78. http://dx.doi.org/10.15251/djnb.2021.164.1365.

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Teratronics is an interdisciplinary field of Opto-and Microelectronics embracing the important features of high-speed digital signal processing, high-frequency electronics, and optics and photonics. This is one of the significant challenging fields of solid state physics and technology with the new domains of electronics industry and research. This review outlines the different field of application of terahertz wave in security, medical imaging, chemical and biological sensing and highly emerging field of wide-band telecommunications along with the development of active and passive devices. Discussion encompasses from the founding concept of THz electronics to the development and future scopes. Content of this article will also include the new aspects of terahertz technology with their present contenders in the field of security and telecommunication. Dialogue for the newly evolved devices such as nano-ring and disk transistor along with stacked quantum dots systems also included to provide a novel glimpse for deep and underlying fundamental physical mechanism. All these topics will provide a critical supervision for further innovative stages in this field.

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Xu, Yikai. "Advances in CODE V design in terahertz imaging system." Advances in Engineering Technology Research 6, no. 1 (July 18, 2023): 533. http://dx.doi.org/10.56028/aetr.6.1.533.2023.

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The band of terahertz (THz) spans from microwave to infrared bands, which belongs to the transition band from macro-electronics to micro-photonics, possessing peculiarities different from electromagnetic waves in other bands. THz technology with the characteristics of high penetration, broadband, high resolution and transient are employed in various fields, such as space remote sensing, nondestructive detection biomedical imaging and near-field microscopy. These broad applications, in turn, provide incentive to further improve the basic performance of THz technology. Aiming at the application of terahertz technology in the imaging field, this novel mainly discussed the basic principle, key devices, system composition, technical advantages and future development trend of terahertz imaging system. The application status of CODE V optical design software in designing scanning lens systems for terahertz imaging, such as free-form surfaces, non-free surfaces and multi-lens groups are further discussed in this paper.

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Crowe, Thomas W., William R. Deal, Michael Schroter, Ching-Kuang Clive Tzuang, and Ke Wu. "Terahertz RF Electronics and System Integration [Scanning the Issue]." Proceedings of the IEEE 105, no. 6 (June 2017): 985–89. http://dx.doi.org/10.1109/jproc.2017.2700658.

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Dochev, D., A. B. Pavolotsky, V. Belitsky, and H. Olofsson. "Nb3Al thin film deposition for low-noise terahertz electronics." Journal of Physics: Conference Series 97 (February 1, 2008): 012072. http://dx.doi.org/10.1088/1742-6596/97/1/012072.

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Aghasi, H., S. M. H. Naghavi, M. Tavakoli Taba, M. A. Aseeri, A. Cathelin, and E. Afshari. "Terahertz electronics: Application of wave propagation and nonlinear processes." Applied Physics Reviews 7, no. 2 (June 2020): 021302. http://dx.doi.org/10.1063/1.5129403.

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Naftaly, Vieweg, and Deninger. "Industrial Applications of Terahertz Sensing: State of Play." Sensors 19, no. 19 (September 27, 2019): 4203. http://dx.doi.org/10.3390/s19194203.

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This paper is a survey of existing and upcoming industrial applications of terahertz technologies, comprising sections on polymers, paint and coatings, pharmaceuticals, electronics, petrochemicals, gas sensing, and paper and wood industries. Finally, an estimate of the market size and growth rates is given, as obtained from a comparison of market reports.

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Niu, Pingjuan, Li Pei, Yunhui Mei, Hua Bai, and Jia Shi. "Optoelectronic Materials, Devices, and Applications." Applied Sciences 13, no. 13 (June 25, 2023): 7514. http://dx.doi.org/10.3390/app13137514.

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This Special Issue entitled “Optoelectronic Materials, Devices, and Applications” is devoted to gathering a broad array of research papers on the latest advances in the development of optoelectronic materials and devices of semiconductors, fiber optics, power electronics, microwaves, and terahertz [...]

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Pegrum, Colin. "Modelling high- Tc electronics." Superconductor Science and Technology 36, no. 5 (March 9, 2023): 053001. http://dx.doi.org/10.1088/1361-6668/acbb35.

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Abstract This Review examines methods to model Josephson devices such as arrays of superconducting quantum interference devices (SQUIDs) and rows within two-dimensional superconducting quantum interference filters or SQIFs. The emphasis is on high temperature superconducting (HTS) devices, though the techniques apply for any operating temperature. The methods use freely-available and proven software to first extract all self and mutual inductances of the thin-film device, and then to incorporate these data, plus junction models and thermal noise sources into an equivalent circuit for Josephson simulation. The inductance extraction stage also estimates the effective areas of each loop in a structure and also the variation of inductance as temperature changes, due to the varying penetration depth. The final post-processing stage can yield current–voltage, voltage-field and field spectral density responses. The Review also touches briefly on the simulation of a simple model for a terahertz single-junction HTS mixer and also looks at the behaviour of typical hysteretic and non-hysteric HTS RF SQUIDs.

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Weikle, Robert M., N. Scott Barker, Arthur W. Lichtenberger, Matthew F. Bauwens, and Naser Alijabbari. "Heterogeneous Integration and Micromachining Technologies for Terahertz Devices and Components." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, DPC (January 1, 2015): 002041–81. http://dx.doi.org/10.4071/2015dpc-tha31.

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Terahertz electronics has been a topic of research and development for many years, motivated largely by the technological needs of the radio astronomy and remote sensing scientific communities. Over the past decade, however, this field has experienced dramatic growth and intense, renewed interest from academic researchers and federal agencies, as well as from industry. This interest has arisen, in part, from recent funding initiatives from the federal government (such as DARPA's Terahertz Electronics Program), but is also largely due to the establishment of a commercial infrastructure that has made test and measurement instrumentation available to the engineers and scientists working at these frequencies. Moreover, the emergence of CMOS as a potential submillimeter-wave device technology has greatly expanded access to this spectral region by providing circuit designers with a platform for realizing terahertz circuits without need for specialized fabrication facilities or processes. The recent and rapid progress in terahertz electronics has created a demand for improved approaches to packaging and integration, as well as a need for new measurement instrumentation for characterizing emerging terahertz devices. This paper focuses on two recent research developments aimed at addressing these needs and broadening the technology base for both terahertz system implementation and terahertz metrology. These developments include (1) the development of a direct-contact probe technology that permits on-wafer scattering-parameter characterization and measurement of planar integrated devices at frequencies to 1 THz and beyond, and (2) the establishment of processing technologies that permit fabrication of highly-integrated submillimeter-wave diode-based circuits, such as heterodyne receivers and frequency multipliers, that are based on heterogeneous integration of III-V semiconductor devices with thin silicon membranes as a support and integration substrate. The technical foundation for each of these efforts is micromachining of silicon that allow the formation of mechanically-robust and low-loss membrane carriers to support terahertz devices and circuitry. Two examples of heterogeneous integration with silicon as an approach to packaging terahertz components are detailed in this paper. These include development of micromachined probes for on-wafer measurements of devices and circuits in the WR-1.0 waveguide band (0.75 – 1.1 THz). The probe design concept will be presented and methods for characterizing the probe described. Measurements demonstrate that the probes exhibit an insertion loss of less than 7 dB and return loss of greater than 15 dB over 750—1100 GHz band, yielding the first demonstration of on-wafer probe operating above 1 THz. In addition, an example of heterogeneous integration/packaging of a submillimeter-wave frequency quadrupler operating at 160 GHz with efficiency of 30% and corresponding output power of 70 mW will be discussed. The quadrupler design includes two frequency doubler stages in cascade and is based on a balanced circuit architecture that addresses degradation issues often arising from impedance mismatches between multiplier stages. A unique quasi-vertical diode fabrication process consisting of transfer of GaAs epitaxy to the thin silicon support substrate is used to implement the quadrupler, resulting in an integrated drop-in chip module that incorporates 18 varactors, matching networks and beamleads for mounting.

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Xie, Jingya, Wangcheng Ye, Linjie Zhou, Xuguang Guo, Xiaofei Zang, Lin Chen, and Yiming Zhu. "A Review on Terahertz Technologies Accelerated by Silicon Photonics." Nanomaterials 11, no. 7 (June 23, 2021): 1646. http://dx.doi.org/10.3390/nano11071646.

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In the last couple of decades, terahertz (THz) technologies, which lie in the frequency gap between the infrared and microwaves, have been greatly enhanced and investigated due to possible opportunities in a plethora of THz applications, such as imaging, security, and wireless communications. Photonics has led the way to the generation, modulation, and detection of THz waves such as the photomixing technique. In tandem with these investigations, researchers have been exploring ways to use silicon photonics technologies for THz applications to leverage the cost-effective large-scale fabrication and integration opportunities that it would enable. Although silicon photonics has enabled the implementation of a large number of optical components for practical use, for THz integrated systems, we still face several challenges associated with high-quality hybrid silicon lasers, conversion efficiency, device integration, and fabrication. This paper provides an overview of recent progress in THz technologies based on silicon photonics or hybrid silicon photonics, including THz generation, detection, phase modulation, intensity modulation, and passive components. As silicon-based electronic and photonic circuits are further approaching THz frequencies, one single chip with electronics, photonics, and THz functions seems inevitable, resulting in the ultimate dream of a THz electronic–photonic integrated circuit.

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Chu, James. "An Extensive Reference Guide for Terahertz Electronics [Book/Software Reviews]." IEEE Microwave Magazine 22, no. 11 (November 2021): 19–79. http://dx.doi.org/10.1109/mmm.2021.3102286.

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Chudpooti, Nonchanutt, Natapong Duangrit, Prayoot Akkaraekthalin, Ian D. Robertson, and Nutapong Somjit. "Electronics-Based Free-Space Terahertz Measurement Using Hemispherical Lens Antennas." IEEE Access 7 (2019): 95536–46. http://dx.doi.org/10.1109/access.2019.2929697.

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Xu, Yangyang, Rui Yang, and Yan Wang. "Wide-Angle Scanning Graphene-Biased Terahertz Coding Meta-Surface." Micromachines 14, no. 2 (January 17, 2023): 233. http://dx.doi.org/10.3390/mi14020233.

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We demonstrate a reconfigurable beam steerable meta-surface through a graphene-biased slot-array over a grounded quartz substrate. More specifically, the graphene meta-elements can be dynamically tuned to program the radiations by applying adequate DC bias voltages to different gating pads, capable of turning on or off the releasing slots of the guided fields as adjustable switches. In particular, such a graphene-biased terahertz meta-surface will achieve a wide-angle steerable beam at a fixed frequency and the scanning directions can further be modulated when varying the frequency at a certain state of the graphene, thus should pave the way for building up more advanced reconfigurable transceivers and sensors in terahertz wireless electronics.

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Yoon, Hosang, Kitty Y. M. Yeung, Philip Kim, and Donhee Ham. "Plasmonics with two-dimensional conductors." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, no. 2012 (March 28, 2014): 20130104. http://dx.doi.org/10.1098/rsta.2013.0104.

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A wealth of effort in photonics has been dedicated to the study and engineering of surface plasmonic waves in the skin of three-dimensional bulk metals, owing largely to their trait of subwavelength confinement. Plasmonic waves in two-dimensional conductors, such as semiconductor heterojunction and graphene, contrast the surface plasmonic waves on bulk metals, as the former emerge at gigahertz to terahertz and infrared frequencies well below the photonics regime and can exhibit far stronger subwavelength confinement. This review elucidates the machinery behind the unique behaviours of the two-dimensional plasmonic waves and discusses how they can be engineered to create ultra-subwavelength plasmonic circuits and metamaterials for infrared and gigahertz to terahertz integrated electronics.

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Mustafa, F., and A. M. Hashim. "Plasma Wave Electronics: A Revival Towards Solid-State Terahertz Electron Devices." Journal of Applied Sciences 10, no. 14 (July 1, 2010): 1352–68. http://dx.doi.org/10.3923/jas.2010.1352.1368.

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Chamberlain, J. M. "Where optics meets electronics: recent progress in decreasing the terahertz gap." Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences 362, no. 1815 (December 17, 2003): 199–213. http://dx.doi.org/10.1098/rsta.2003.1312.

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Siegel, Peter H. "Terahertz Pioneer: Shenggang Liu “China's Father of Vacuum and Microwave Electronics”." IEEE Transactions on Terahertz Science and Technology 4, no. 1 (January 2014): 6–11. http://dx.doi.org/10.1109/tthz.2013.2294760.

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Dyakonov, M. I., and M. S. Shur. "Plasma wave electronics: novel terahertz devices using two dimensional electron fluid." IEEE Transactions on Electron Devices 43, no. 10 (1996): 1640–45. http://dx.doi.org/10.1109/16.536809.

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Hasan, Muhammad Mahmudul, Chunlei Wang, Nezih Pala, and Michael Shur. "Diamond for High-Power, High-Frequency, and Terahertz Plasma Wave Electronics." Nanomaterials 14, no. 5 (March 1, 2024): 460. http://dx.doi.org/10.3390/nano14050460.

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High thermal conductivity and a high breakdown field make diamond a promising candidate for high-power and high-temperature semiconductor devices. Diamond also has a higher radiation hardness than silicon. Recent studies show that diamond has exceptionally large electron and hole momentum relaxation times, facilitating compact THz and sub-THz plasmonic sources and detectors working at room temperature and elevated temperatures. The plasmonic resonance quality factor in diamond TeraFETs could be larger than unity for the 240–600 GHz atmospheric window, which could make them viable for 6G communications applications. This paper reviews the potential and challenges of diamond technology, showing that diamond might augment silicon for high-power and high-frequency compact devices with special advantages for extreme environments and high-frequency applications.

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Anagha, P., Monu Kinha, Amit Khare, and D. S. Rana. "Precise measurement of correlation parameters driving optical transparency in CaVO₃ thin film by steady state and time resolved terahertz spectroscopy." Journal of Applied Physics 132, no. 3 (July 21, 2022): 033102. http://dx.doi.org/10.1063/5.0091664.

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Transparent conducting materials are inevitable in the fast-developing optoelectronic and photovoltaic industries. Correlated metals are emerging classes of materials that possess a charge density comparable to the metals in which the correlation effects provide transparency. So, understanding the fundamental physics of these materials is equally important to improve the performance of devices. We have investigated the low energy and non-equilibrium dynamics of the CaVO3 (CVO) thin film using terahertz time-domain and time-resolved terahertz spectroscopic measurements. Though the electrical resistivity of the CVO thin film shows a Fermi liquid-like signature, the terahertz conductivity dynamics unveil the presence of metal-insulator transition. Furthermore, the mass renormalization effects indicate the competition between electron correlations and phonon interactions in driving the ground state of this system. It is clear that the relaxation of photo-excited carriers is through electron–phonon thermalization, and comprehensive studies show the metallic nature of the system with electron correlations. Thus, the extracted optical and electrical parameters of CVO are comparable with the existing transparent conducting materials and, hence, make this system another potential candidate for transparent electronics.

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Kartashov, I. N., and M. V. Kuzelev. "Radiative Surface Waves in Layered Plasma–Dielectric Structures and Prospects of Their Application in Plasma Microwave Electronics." Plasma Physics Reports 47, no. 5 (May 2021): 453–64. http://dx.doi.org/10.1134/s1063780x21060088.

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Abstract Surface waves in layered systems consisting of material media with different frequency dispersions are considered: dielectric–plasma–vacuum, vacuum–plasma–plasma, and dielectric–vacuum–plasma. It is shown that in such systems, one of the surface waves can be radiative into a medium that does not form an interface for the surface wave under consideration, in view of which the wave becomes decaying. In the dielectric–vacuum–plasma system, there is only one surface wave localized at the vacuum–plasma interface, which is radiative into the dielectric in a certain region of wavenumbers with a not too small thickness of the vacuum layer. For all cases, the possibilities of exciting surface waves of a layered structure by an electron beam are analyzed. It is indicated which surface waves will be excited most efficiently. The prospects of using such waves in plasma microwave electronics in the development of sub-terahertz and possibly terahertz frequency ranges are shown.

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Surma, Mateusz, Paweł Komorowski, Maciej Neneman, and Agnieszka Siemion. "Chocolate Terahertz Fresnel Lens." Photonics Letters of Poland 12, no. 4 (December 17, 2020): 103. http://dx.doi.org/10.4302/plp.v12i4.1046.

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Recent enormous development of 3D printing techniques gave the possibility of precise manufacturing of designed optical structures. This paper presents designing, manufacturing and the results obtained for chocolate Fresnel lens. Chocolate, similarly to wax, can be melted and used in the 3D printed form to create a terahertz (THz) optical element. Parameters of the chocolate lens are compared with the one made of wax. In simple applications both materials can be used as a cost-effective alternative for conventional optical materials used for THz range of radiation. Both lenses have been designed and compared for 140 GHz. Full Text: PDF ReferencesM. Naftaly, R.E. Miles, and P.J. Greenslade, "THz transmission in polymer materials — a data library", Joint 32nd International Conference on Infrared and Millimeter Waves and the 15th International Conference on Terahertz Electronics, 819-820 (2007). CrossRef S. Firoozabadi, F. Beltran-Mejia, A. Soltani, D. Jahn, S.F. Busch, J.C. Balzer, and M. Koch, "THz transmission blazed grating made out of paper tissue", 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 1-2 (2017). CrossRef D. Headland, W. Withayachumnankul, M. Webb, H. Ebendorff-Heidepriem, A. Luiten, and D. Abbott, "Analysis of 3D-printed metal for rapid-prototyped reflective terahertz optics", Optics express 24(15), 17384-17396 (2016). CrossRef S.F. Busch, M. Weidenbach, M. Fey, F. Schäfer, T. Probst, and M. Koch, "Optical Properties of 3D Printable Plastics in the THz Regime and their Application for 3D Printed THz Optics", Journal of Infrared, Millimeter, and Terahertz Waves 35(12), 993-997 (2014). CrossRef C. Jördens, and M. Koch, "Detection of foreign bodies in chocolate with pulsed terahertz spectroscopy", Optical Engineering 47(3), 037003 (2008). CrossRef A.D. Squires, E. Constable, and R.A. Lewis, "3D Printed Terahertz Diffraction Gratings And Lenses", Journal of Infrared, Millimeter, and Terahertz Waves 36(1), 72-80 (2015). CrossRef W. D. Furlan, V. Ferrando, J. A. Monsoriu, P. Zagrajek, E. Czerwińska, and M. Szustakowski, "3D printed diffractive terahertz lenses", Optics letters 41(8), 1748-1751 (2016). CrossRef X. Wei, C. Liu, L. Niu, Z. Zhang, K. Wang, Z. Yang, and J. Liu, "Generation of arbitrary order Bessel beams via 3D printed axicons at the terahertz frequency range", Applied optics 54(36), 10641-10649 (2015). CrossRef S. Banerji, and B. Sensale-Rodriguez, "3D-printed diffractive terahertz optical elements through computational design", Micro-and Nanotechnology Sensors, Systems, and Applications XI 10982, 109822X, International Society for Optics and Photonics (2019). CrossRef M. Surma, I. Ducin, P. Zagrajek, and A. Siemion, "Sub-Terahertz Computer Generated Hologram with Two Image Planes", Applied Sciences 9(4), 659 (2019). CrossRef A. Siemion, P. Komorowski, M. Surma, I. Ducin, P. Sobotka, M. Walczakowski, and E. Czerwińska, "Terahertz diffractive structures for compact in-reflection inspection setup", Optics Express 28(1), 715-723 (2020). CrossRef E.R. Brown, J.E. Bjarnason, A.M. Fedor, and T.M. Korter, "On the strong and narrow absorption signature in lactose at 0.53THz", Applied Physics Letters 90(6), 061908 (2007). CrossRef M. Bernier, F. Garet, and J. L. Coutaz, "Determining the Complex Refractive Index of Materials in the Far-Infrared from Terahertz Time-Domain Data", Terahertz Spectroscopy-Cutting Edge Technology, Intech-Open Science (2017). CrossRef E.Hecht, Optics 5th global ed.(Boston, Pearson Education 2017). DirectLink

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Zhuldybina, Mariia, Xavier Ropagnol, and François Blanchard. "Towards in-situ quality control of conductive printable electronics: a review of possible pathways." Flexible and Printed Electronics 6, no. 4 (December 1, 2021): 043007. http://dx.doi.org/10.1088/2058-8585/ac442d.

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Abstract Over the past decade, printed electronics (PE) has shown great potential for a wide range of industries, from consumer goods, electronics, aerospace, automotive, pharmaceutical, biomedical, to textiles and fashion. The rapid development of printing technology has been strongly driven by the growth of the PE market and its many applications. Here, we review the latest trends in PE production quality control, focusing on emerging technologies such as terahertz spectroscopy, which may play a key role in the development of smart manufacturing of PE devices in the near future. We also provide a comparison with conventional quality control technologies or off-line measurements, such as four-point probe measurements, atomic force microscopy, optical microscopy, etc.

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Przewłoka, Aleksandra, Serguei Smirnov, Irina Nefedova, Aleksandra Krajewska, Igor S. Nefedov, Petr S. Demchenko, Dmitry V. Zykov, et al. "Characterization of Silver Nanowire Layers in the Terahertz Frequency Range." Materials 14, no. 23 (December 2, 2021): 7399. http://dx.doi.org/10.3390/ma14237399.

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Thin layers of silver nanowires are commonly studied for transparent electronics. However, reports of their terahertz (THz) properties are scarce. Here, we present the electrical and optical properties of thin silver nanowire layers with increasing densities at THz frequencies. We demonstrate that the absorbance, transmittance and reflectance of the metal nanowire layers in the frequency range of 0.2 THz to 1.3 THz is non-monotonic and depends on the nanowire dimensions and filling factor. We also present and validate a theoretical approach describing well the experimental results and allowing the fitting of the THz response of the nanowire layers by a Drude–Smith model of conductivity. Our results pave the way toward the application of silver nanowires as a prospective material for transparent and conductive coatings, and printable antennas operating in the terahertz range—significant for future wireless communication devices.

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Viti, Leonardo, and Miriam Serena Vitiello. "Tailored nano-electronics and photonics with two-dimensional materials at terahertz frequencies." Journal of Applied Physics 130, no. 17 (November 7, 2021): 170903. http://dx.doi.org/10.1063/5.0065595.

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Deng, Xiangying, and Yukio Kawano. "Terahertz Plasmonics and Nano-Carbon Electronics for Nano-Micro Sensing and Imaging." International Journal of Automation Technology 12, no. 1 (January 5, 2018): 87–96. http://dx.doi.org/10.20965/ijat.2018.p0087.

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Sensing and imaging with THz waves is an active area of modern research in optical science and technology. There have been a number of studies for enhancing THz sensing technologies. In this paper, we review our recent development of THz plasmonic structures and carbon-based THz imagers. The plasmonic structures have strong possibilities of largely increasing detector sensitivity because of their outstanding properties of high transmission enhancement at a subwavelength aperture and local field concentration. We introduce novel plasmonic structures and their performance, including a Si-immersed bull’s-eye antenna and multi-frequency bull’s-eye antennas. The latter part of this paper explains carbon-based THz detectors and their applications in omni-directional flexible imaging. The use of carbon nanotube films has led to a room-temperature, flexible THz detector and has facilitated the visualization of samples with three-dimensional curvatures. The techniques described in this paper can be used effectively for THz sensing and imaging on a micro- and nano-scale.

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Kulchitsky, Nikolay A., Arkady V. Naumov, and Vadim V. Startsev. "Photonic and Terahertz applications as the next gallium arsenide market driver." Modern Electronic Materials 6, no. 3 (September 30, 2020): 77–84. http://dx.doi.org/10.3897/j.moem.6.3.63224.

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Analysis of current GaAs and related device market initiated in a number of earlier works has been continued. Binary semiconductor GaAs compound is a conventional MW electronics material. Until recently GaAs based HF ICs for mobile phones were among the most rapidly growing segments of GaAs market. However the GaAs market development trend is changing. Photonics and Terahertz engineering are becoming the new world GaAs market drivers. This means that the current emphasize of GaAs single crystal technologies will shift toward vertical directional crystallization of “optoelectronic quality” crystals. In the medium and longer terms the world GaAs wafer and epitaxial structure markets will continue growing. In the shorter term we all will have to take into account COVID epidemic consequences. Still the GaAs market is closely related to Smartphone market novelties. Quite probably after a long growth period the GaAs market will keep on shrinking for the second consecutive year: GaAs production may decline by 11–12% in 2020. Assuming that the epidemic will be somehow taken under control in 2021 the overall Smartphone production can probably be expected to grow starting from 2021. Currently the Russian market of semiconductor compounds for photonics and electronic components (GaAs etc.) is but moderate and in predictable terms is not expected to achieve a level that is required for the emergence of a competitive domestic manufacturer, even though all importation replacement programs are accomplished. Meanwhile there is understanding that developing an advanced electronic components industry in Russia requires larger production of source materials.

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Zeranska-Chudek, Klaudia, Agnieszka Siemion, Norbert Palka, Ahmed Mdarhri, Ilham Elaboudi, Christian Brosseau, and Mariusz Zdrojek. "Terahertz Shielding Properties of Carbon Black Based Polymer Nanocomposites." Materials 14, no. 4 (February 9, 2021): 835. http://dx.doi.org/10.3390/ma14040835.

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The majority of industry using high-speed communication systems is shifting towards higher frequencies, namely the terahertz range, to meet demands of more effective data transfer. Due to the rising number of devices working in terahertz range, effective shielding of electromagnetic interference (EMI) is required, and thus the need for novel shielding materials to reduce the electromagnetic pollution. Here, we show a study on optical and electrical properties of a series of ethylene co-butyl acrylate/carbon black (EBA/CB) composites with various CB loading. We investigate the transmittance, reflectance, shielding efficiency, absorption coefficient, refractive index and complex dielectric permittivity of the fabricated composites. Finally, we report a material that exhibits superior shielding efficiency (SE)—80 dB at 0.9 THz (14.44 vol% CB loading, 1 mm thick)—which is one of the highest SE values among non-metallic composite materials reported in the literature thus far. Importantly, 99% of the incoming radiation is absorbed by the material, significantly increasing its applicability. The absorption coefficient (α) reaches ~100 cm−1 for the samples with highest CB loading. The EBA/CB composites can be used as lightweight and flexible shielding packaging materials for electronics, as passive terahertz absorbers or as radiation shields for stealth applications.

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Jiang, Zhaoxia, Jin Leng, Jin Li, Jianfei Li, Boyang Li, Mao Yang, Xiaolian Wang, and Qiwu Shi. "Flexible Terahertz Metamaterials Absorber based on VO2." Photonics 10, no. 6 (May 28, 2023): 621. http://dx.doi.org/10.3390/photonics10060621.

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Terahertz (THz) metamaterials have attracted great attention due to their widely application potential in smart THz devices; however, most of them are fabricated on rigid substrate and thus limit the exploration of flexible THz electronics. In this paper, a flexible THz metamaterial absorber (MMA) incorporated with phase change material vanadium dioxide (VO2) is proposed. The simulation results indicate that two absorption peaks at around 0.24 THz (marked as A) and 0.46 THz (marked as B) can be observed by designing a I-shaped metamaterial combined with split ring structure. The strong absorption over 92% at 0.24 THz is bending-insensitive, but the absorption at 0.46 THz is bending-sensitive, across the bending angle in the range of 0–50 degrees. Moreover, dynamic modulation of the absorption can be achieved across the insulator-metal phase transition of VO2. Particularly, the absorption of the A-peak can be tuned from 99.4% to 46.9%, while the absorption of the B-peak can be tuned from 39.6% to 99.3%. This work would provide significance for the design of flexible THz smart devices.

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Kono, Junichiro. "(Invited, Digital Presentation) Macroscopically Aligned Carbon Nanotubes for Photonics, Electronics, and Thermoelectrics." ECS Meeting Abstracts MA2022-01, no. 10 (July 7, 2022): 775. http://dx.doi.org/10.1149/ma2022-0110775mtgabs.

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The remarkable flexibility, stable chemical structure, and extraordinary thermal, electrical, and optical properties of carbon nanotubes (CNTs) are promising for a variety of applications in flexible and/or high-temperature electronics, optoelectronics, and thermoelectrics, including wearables, refractory photonics, and waste heat harvesting [1]. However, the long-standing goal in the preparation of CNT ensembles is how to maintain the extraordinary properties of individual CNTs on a macroscopic scale. The polydispersity and randomness remain two main challenges. Here, we will discuss different methods for creating macroscopically aligned CNTs, including spontaneous formation of wafer-scale aligned CNT films via controlled vacuum filtration [2-4] and production of ultrahigh-conductivity CNT fibers and films through solution spinning and coating [5,6]. We will then describe the optical [2,7-11], dc and ac electrical [2,12-17], thermal [18], and thermoelectric [19-21] properties of these materials. These results are promising for device applications in various fields such as flexible CNT broadband detectors [22-26], spectrally selective thermal emitters [11], and thermoelectric devices [20,21]. W. Gao et al., “Macroscopically Aligned Carbon Nanotubes for Flexible and High-Temperature Electronics, Optoelectronics, and Thermoelectrics,” Journal of Physics D: Applied Physics 53, 063001 (2020). X. He et al., “Wafer-Scale Monodomain Films of Spontaneously Aligned Single-Walled Carbon Nanotubes,” Nature Nanotechnology 11, 633 (2016). W. Gao and J. Kono, “Science and Applications of Wafer-Scale Crystalline Carbon Nanotube Films Prepared through Controlled Vacuum Filtration,” Royal Society Open Science 6, 181605 (2019). N. Komatsu et al., “Groove-Assisted Global Spontaneous Alignment of Carbon Nanotubes in Vacuum Filtration,” Nano Letters 20, 2332 (2020). N. Behabtu et al., “Strong, Light, Multifunctional Fibers of Carbon Nanotubes with Ultrahigh Conductivity,” Science 339, 182 (2013). L. W. Taylor et al., “Improved Properties, Increased Production, and the Path to Broad Adoption of Carbon Nanotube Fibers,” Carbon 171, 689 (2021). K. Yanagi et al., “Intersubband Plasmons in the Quantum Limit in Gated and Aligned Carbon Nanotubes,” Nature Communications 9, 1121 (2018). W. Gao et al., “Continuous Transition between Weak and Ultrastrong Coupling through Exceptional Points in Carbon Nanotube Microcavity Exciton–Polaritons,” Nature Photonics 12, 362 (2018). M. E. Green et al., “Bright and Ultrafast Photoelectron Emission from Aligned Single-Wall Carbon Nanotubes through Multiphoton Exciton Resonance,” Nano Letters 19, 158 (2019). F. Katsutani et al., “Direct Observation of Cross-Polarized Excitons in Aligned Single-Chirality Single-Wall Carbon Nanotubes,” Physical Review B 99, 035426 (2019). W. Gao et al., “Macroscopically Aligned Carbon Nanotubes as a Refractory Platform for Hyperbolic Thermal Emitters,” ACS Photonics 6, 1602 (2019). X. Wang et al., “High-Ampacity Power Cables of Tightly-Packed and Aligned Carbon Nanotubes,” Advanced Functional Materials 24, 3241 (2014). A. Zubair et al., “Carbon Nanotube Fiber Terahertz Polarizer,” Applied Physics Letters 108, 141107 (2016). D. Tristant et al., “Enlightening the Ultrahigh Electrical Conductivities of Doped Double-Wall Carbon Nanotube Fibers by Raman Spectroscopy and First-Principles Calculations,” Nanoscale 18, 19668 (2016). N. Komatsu et al., “Modulation-Doped Multiple Quantum Wells of Aligned Single-Wall Carbon Nanotubes,” Advanced Functional Materials 27, 1606022 (2017). F. R. G. Bagsican et al., “Terahertz Excitonics in Carbon Nanotubes: Exciton Autoionization and Multiplication,” Nano Letters 20, 3098 (2020). A. Baydin et al., “Giant Terahertz Polarization Rotation in Ultrathin Films of Aligned Carbon Nanotubes,” Optica 8, 760 (2021). S. Yamaguchi et al., “One-Directional Thermal Transport in Densely Aligned Single-Wall Carbon Nanotube Films,” Applied Physics Letters 115, 223104 (2019). K. Fukuhara et al., “Isotropic Seebeck Coefficient of Aligned Single-Wall Carbon Nanotube Films,” Applied Physics Letters 113, 243105 (2018). Y. Ichinose et al., “Solving the Thermoelectric Trade-Off Problem with Metallic Carbon Nanotubes,” Nano Letters 19, 7370 (2019). N. Komatsu et al., “Macroscopic Weavable Fibers of Carbon Nanotubes with Giant Thermoelectric Power Factor,” Nature Communications 12, 4931 (2021). S. Nanot et al., “Broadband, Polarization-Sensitive Photodetector Based on Optically-Thick Films of Macroscopically Long, Dense, and Aligned Carbon Nanotubes,” Scientific Reports 3, 1335 (2013). X. He et al., “Photothermoelectric p-n Junction Photodetector with Intrinsic Broadband Polarimetry Based on Macroscopic Carbon Nanotube Films,” ACS Nano 7, 7271 (2013). X. He et al., “Carbon Nanotube Terahertz Detector,” Nano Letters 14, 3953 (2014). X. He, F. Léonard, and J. Kono, “Uncooled Carbon Nanotube Photodetectors,” Advanced Optical Materials 3, 989 (2015). A. Zubair et al., “Carbon Nanotube Woven Textile Photodetector,” Physical Review Materials 2, 015201 (2018).

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Kulchitskiy, N. A., A. V. Naumov, and V. V. Startsev. "Photonic and terahertz applications as a next driver of gallium arsenide market." Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering 23, no. 3 (November 10, 2020): 167–76. http://dx.doi.org/10.17073/1609-3577-2020-3-167-176.

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Abstract:

Analysis of current GaAs and related device market initiated in a number of earlier works has been continued. Binary semiconductor GaAs compound is a conventional MW electronics material. Until recently GaAs based HF ICs for mobile phones were among the most rapidly growing segments of GaAs market. However the GaAs market development trend is changing. Photonics and TeraHertz engineering are becoming the new world GaAs market drivers. This means that the current emphasize of GaAs single crystal technologies will shift toward vertical directional crystallization of “optoelectronic quality” crystals. In the medium and longer terms the world GaAs wafer and epitaxial structure markets will continue growing. In the shorter term we all will have to take into account COVID epidemic consequences. Still the GaAs market is closely related to Smartphone market novelties. Quite probably after a long growth period the GaAs market will keep on shrinking for the second consecutive year: GaAs production may decline by 11–12 % in 2020. Assuming that the epidemic will be somehow taken under control in 2021 the overall Smartphone production can probably be expected to grow starting from 2021.Currently the Russian market of semiconductor compounds for photonics and electronic components (GaAs etc.) is but moderate and in predictable terms is not expected to achieve a level that is required for the emergence of a competitive domestic manufacturer, even though all importation replacement programs are accomplished. Meanwhile there is understanding that developing an advanced electronic components industry in Russia requires larger production of source materials.

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Торхов, Н. А., Л. И. Бабак, and А. А. Коколов. "Применение диодов Шоттки в терагерцовом частотном диапазоне." Физика и техника полупроводников 53, no. 12 (2019): 1697. http://dx.doi.org/10.21883/ftp.2019.12.48630.9215.

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AbstractThe broad range of possibilities for optimizing the design and electrical parameters of crystals of Schottky diodes, manufactured according to the mesa–substrate and mesa–mesa planar technologies with anode terminals in the form of an air bridge with a whisker, along with the use of higher quality compact models, make it possible to efficiently exploit the physical potential of Schottky contacts when designing monolithic integrated circuits according to diode technologies, increase their reliability, and overcome the significant lag of semiconductor electronics behind optoelectronics in the terahertz (THz) frequency range.

Journal articles on the topic 'Terahertz electronics'

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