Dissertations / Theses on the topic 'Terahertz electronics'

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1

Lucyszyn, Stepan. "Millimetre-wave and terahertz electronics." Thesis, Imperial College London, 2009. http://hdl.handle.net/10044/1/6974.

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Overview: The basic thesis for the advancement of millimetre-wave and terahertz electronics is represented in four sections: Signal Processing, Component Design and Realization, Modelling and Materials, and Paradigm Shift. The first section is at system and circuit levels and reports on complex signal process functions that have been performed directly on the millimetre-wave carrier signal, intended for realizing low-cost and adaptive communications and radar systems architectures. The second section is at circuit and component levels and reports on techniques for the design and realization of low-loss passives for use at millimetrewave frequencies. The third section is at component and material levels and reports on modelling techniques for passives for use at both millimetre-wave and terahertz frequencies. Finally, the fourth section introduces a revolutionary new technology that represents a paradigm shift in the way millimetre-wave and terahertz electronics (i.e. components, circuits and systems) can be implemented. As found with the new generation of mobile phone handsets, a fusion of two extreme technologies can take place; here, complex signal processing operations could be performed both directly on the carrier signal and with the use of a spatial light modulator. Based on a selection of 20 papers (co-)authored by the candidate †b, and published over a period of 15 years, it will be seen that a coherent theme runs throughout this body of work, for the advancement of knowledge in millimetre-wave and terahertz electronics.
2

Othman, Mohd Azlishah. "Sub-Terahertz : generation and detection." Thesis, University of Nottingham, 2013. http://eprints.nottingham.ac.uk/13375/.

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Nowadays, there has been an increasing interest in Terahertz (THz) radiation for application across scientific disciplines including atmospheric sensing, medical diagnosis, security screening and explosive detection. The limitation of THz generators and detectors has gained interest from scientists and engineers to explore the development of both sources and detectors. With the advantages of low cost, low power consumption, high reliability and potential for large-scale integration, sub-THz generator and detector can be developed using CMOS process technology. In this thesis, an IMPATT diode acts as a sub-THz generator, HEMTs and MOSFETs act as sub-THz detectors, which are developed in AMS 0.35 μm CMOS technology and UMC, 0.18 μm CMOS technology. The size of the IMPATT diode was 120 μm x 50 μm with the target resonant frequency at 30 GHz. The experiment results show that the operating frequency of the IMPATT diode was between 12 GHz up to 14 GHz. Then by using HEMTs with 0.2 μm gate length and 200 μm gate widths, sub-THz radiation detection has been demonstrated. Experimental results show that the photoresponse depends on the drain current and the gate to source voltage VGS. In addition, photoresponse also depends on varying frequencies up to 220 GHz and fixed the drain current. Furthermore, the HEMT also give an indication of response by varying the input power of microwave extender. MOSFETs from two types of CMOS technology; AMS 0.35μm and UMC 0.18 μm technology with different gate length ranging from 180 nm up 350 nm were demonstrated. These results provide evidence that the photoresponse increases with the drain current and the RF input power, but inversely to the frequencies. These results also provide evidence that the MOSFETs are able to work as low cost and sensitive sub-THz detector.
3

Shen, Hao. "Compressed sensing on terahertz imaging." Thesis, University of Liverpool, 2012. http://livrepository.liverpool.ac.uk/8457/.

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Most terahertz (THz) time-domain (pulsed) imaging experiments that have been performed by raster scanning the object relative to a focused THz beam require minutes or even hours to acquire a complete image. This slow image acquisition is a major limiting factor for real-time applications. Other systems using focal plane detector arrays can acquire images in real-time, but they are too expensive or are limited by low sensitivity in the THz range. More importantly, such systems cannot provide spectroscopic information of the sample. To develop faster and more efficient THz time-domain (pulsed) imaging systems, this research used random projection approach to reconstruct THz images from the synthetic and real-world THz data based on the concept of compressed/compressive sensing/sampling (CS). Compared with conventional THz time-domain (pulsed) imaging, no raster scanning of the object is required. The simulation results demonstrated that CS has great potential for real-time THz imaging systems because its use can dramatically reduce the number of measurements in such systems. We then implemented two different CS-THz systems based on the random projection method. One is a compressive THz time-domain (pulsed) spectroscopic imaging system using a set of independent optimized masks. A single-point THz detector, together with a set of 40 optimized two-dimensional binary masks, was used to measure the THz waveforms transmitted through a sample. THz time- and frequency-domain images of the sample comprising 20×20 pixels were subsequently reconstructed. This demonstrated that both the spatial distribution and the spectral characteristics of a sample can be obtained by this means. Compared with conventional THz time-domain (pulsed) imaging, ten times fewer THz spectra need to be taken. In order to further speed up the image acquisition and reconstruction process, another hardware implementation - a single rotating mask (i.e., the spinning disk) with random binary patterns - was utilized to spatially modulate a collimated THz. After propagating through the sample, the THz beam was measured using a single detector, and a THz image was subsequently reconstructed using the CS approach. This demonstrated that a 32×32 pixel image could be obtained from 160 to 240 measurements. This spinning disk configuration allows the use of an electric motor to rotate the spinning disk, thus enabling the experiment to be performed automatically and continuously. To the best of our knowledge, this is the first experimental implementation of a spinning disk configuration for high speed compressive image acquisition. A three-dimensional (3D) joint reconstruction approach was developed to reconstruct THz images from random/incomplete subsets of THz data. Such a random sampling method provides a fast THz imaging acquisition and also simplifies the current THz imaging hardware implementation. The core idea is extended in image inpainting to the case of 3D data. Our main objective is to exploit both spatial and spectral/temporal information for recovering the missing samples. It has been shown that this approach has superiority over the case where the spectral/temporal images are treated independently. We first proposed to learn a spatio-spectral/temporal dictionary from a subset of available training data. Using this dictionary, the THz images can then be jointly recovered from an incomplete set of observations. The simulation results using the measured THz image data confirm that this 3D joint reconstruction approach also provides a significant improvement over the existing THz imaging methods.
4

Glynn, David William. "Terahertz frequency doubling circuits for communications." Thesis, University of Birmingham, 2017. http://etheses.bham.ac.uk//id/eprint/7517/.

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Exploitation of the terahertz frequency region offers tantalising rewards over other parts of the congested spectrum, however current technologies and manufacturing methods are not yet commercially effective to capitalise on its riches. This thesis is concerned with developing new techniques to enable and improve radio frequency engineering design for tomorrow’s terahertz applications. The techniques in this thesis will provide engineer’s the knowledge to creatively tackle some of the challenges when designing at the terahertz scale. A novel design of a 9 to 18 GHz microstrip diode frequency doubler using the coupling matrix method is presented, which demonstrates new techniques for matching and integration of the circuit components. It illustrates a new approach for diode doubler design and provides a guide for solving the matching and integrating of passive circuits, such as input and output filters, to the active part of a circuit. Complex circuit interactions are controlled in the design, without the traditional reliance on circuit optimisation. Terahertz manufacturing technologies are investigated, and a 150 GHz E field plane terahertz waveguide using a polymer (SU-8) etching, layering and metal coating technology, is designed, constructed and measured. Such a device would be a fundamental component in a future terahertz frequency communication system.
5

Salmans, Parker Dean. "Semiconductor Terahertz Electronics and Novel High-Speed Single-Shot Measurements." BYU ScholarsArchive, 2017. https://scholarsarchive.byu.edu/etd/6544.

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Ultrafast spectroscopy is used to study essential characteristics of solid-state materials. We use ultrafast techniques to study semiconductors at THz frequencies, as well as demonstrate new single-shot measurement techniques. The future of electronics is in the THz regime. We study a crucial characteristic of semiconductors used in devices: the critical field at which the material becomes conductive. GaAs is a promising semiconductor for high-speed devices, and we use enhanced THz electric fields to measure the critical fields at 0.7, 0.9, 1.1, and 1.5 THz frequencies. Single-shot spectroscopy is a technique used to measure ultrafast time scale laser pulses. We show that a new, optical-fiber-based single-shot technique can map out the electric field of THz pulses. Also, we show two variants on this single-shot theme that can be used to measure ultrafast signals. We compare a classic pump-probe measurement to two types of single-shot measurements that use either a spectrometer or a 3 km fiber optic cable and oscilloscope, and we discuss important considerations to recovering the sample response.
6

Escorcia, Carranza Ivonne. "Metamaterial based CMOS terahertz focal plane array." Thesis, University of Glasgow, 2015. http://theses.gla.ac.uk/6955/.

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The distinctive properties of terahertz radiation have driven an increase in interest to develop applications in the imaging field. The non-ionising radiation properties and transparency to common non-conductive materials have led research into developing a number of important applications including security screening, medical imaging, explosive detection and wireless communications. The proliferation of these applications into everyday life has been hindered by the lack of inexpensive, compact and room-temperature terahertz sources and detectors. These issues are addressed in this work by developing an innovative, uncooled, compact, scalable and low-cost terahertz detector able to target single frequency imaging applications such as stand-off imaging and non-invasive package inspection. The development of two types of metamaterial (MM) based terahertz focal plane arrays (FPAs) monolithically integrated in a standard complementary metal-oxide semiconductor (CMOS) technology are presented in this Thesis. The room temperature FPAs are composed of periodic cross-shaped resonant MM absorbers, microbolometer sensors in every pixel and front-end readout electronics fabricated in a 180 nm six metal layer CMOS process from Texas Instruments (TI). The MM absorbers are used due to the lack of natural selective absorbing materials of terahertz radiation. These subwavelength structures are made directly in the metallic and insulating layers available in the CMOS foundry process. When the MM structures are distributed in a periodic fashion, they behave as a frequency-selective material and are able to absorb at the required frequency. The electromagnetic (EM) properties are determined by the MM absorber geometry rather than their composition, thus being completely customisable for different frequencies. Single band and broadband absorbers were designed and implemented in the FPAs to absorb at 2.5 THz where a natural atmospheric transmission window is found, thus reducing the signal loss in the imaging system. The new approach of terahertz imaging presented in this Thesis is based in coupling a MM absorber with a suitable microbolometer sensor. The MM structure absorbs the terahertz wave while the microbolometer sensor detects the localised temperature change, depending on the magnitude of the radiation. Two widely used microbolometer sensors are investigated to compare the sensitivity of the detectors. The two materials are Vanadium Oxide (VOx) and p-n silicon diodes both of which are widely used in infrared (IR) imaging systems. The VOx microbolometers are patterned above the MM absorber and the p-n diode microbolometers are already present in the CMOS process. The design and fabrication of four prototypes of FPAs with VOx microbolometers demonstrate the scalability properties to create high resolution arrays. The first prototype consists of a 5 x 5 array with a pixel size of 30 μm x 30 μm. An 8 x 8 array, a 64 x 64 array with serial readout and a 64 x 64 array with parallel readout are also presented. Additionally, a 64 x 64 array with parallel output readout electronics with p-n diode microbolometers was fabricated. The design, simulation, characterisation and fabrication of single circuit blocks and a complete 64 x 64 readout integrated circuit is thoroughly discussed in this Thesis. The absorption characteristics of the MMs absorbers, single VOx and p-n diode pixels, 5 x 5 VOx FPA and a 64 x 64 array for both microbolometer types demonstrate the concept of CMOS integration of a monolithic MM based terahertz FPA. The imaging performance using both transmission and reflection mode is demonstrated by scanning a metallic object hidden in a manila envelope and using a single pixel of the array as a terahertz detector. This new approach to make a terahertz imager has the advantages of creating a high sensitivity room temperature technology that is capable of scaling and low-cost manufacture.
7

Khiabani, Neda. "Modelling, design and characterisation of terahertz photoconductive antennas." Thesis, University of Liverpool, 2013. http://livrepository.liverpool.ac.uk/14213/.

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The area of Terahertz (THz) is one of the fastest growing research fields in recent years. THz antennas based upon photoconduction techniques are the most common devices in THz systems. However, the radiated THz power from these devices and the efficiency are very low. Also, different antenna excitation and current generation process in THz antennas, as compared to microwave antennas, requires new analyses approaches. Therefore, the motivation of this thesis is to theoretically establish why the THz antenna is inefficient; from which, general methods to improve the performance of such antennas are explored and validated. These investigations are essential to gain a better understanding of THz photoconductive antenna performance. In this research a new equation for the source conductance of a THz antenna is firstly developed. This is a prerequisite for further antenna radiated power analysis. Next, a new equivalent circuit, modelling the underlying physical behaviour of the device through the use of a lumped-element network, is developed. Through this model, various factors which affect the radiated power and efficiency of the THz photoconductive antenna are examined and compared with measurement results. This model can be applied to maximize the optical-to-THz conversion efficiency. Also, temporal voltage behaviour of the antenna can be predicted more realistically. Furthermore, a computational simulation procedure, solving both optoelectronic and electromagnetic problems, is proposed and validated by measurement results. This approach facilitates prediction of THz photoconductive antenna performance before antenna fabrication. In addition, considering the requirement of high THz power and good SNR devices for various THz applications, a new top loaded THz antenna embedded on a conical horn with the trapezoidal photomixer is proposed. The generation of THz photocurrent, impedance matching and coupling of the THz wave to air (the necessary factors for power enhancement) are improved. Moreover, the new trapezoidal photomixer is examined and the measurement results show that it has better radiated THz power and SNR than the bare gap and rectangular photomixers.
8

Ledwosinska, Elzbieta. "Graphene as a mechanical or electrical transducer for far-infrared / terahertz detection." Thesis, McGill University, 2013. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=119378.

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We endeavour to fill the "THz gap" in highly performing detectors by employing graphene's mechanical properties in a miniature Golay cell, and hydrogenated graphene's electrical properties in a microbolometer. The Golay cell is the most sensitive room- temperature THz detector on the market, but requires miniaturization as the first step of integration into an imaging array. Currently, ultra-thin membranes for miniature Golay cells suffer diminishing responsivity as the lateral dimensions are reduced. We propose graphene as the ideal membrane material, whereby its minimal elastic stiffness due to its monoatomic nature allows scaling to the microscopic scale. We simulate membrane deflection versus temperature and analyze the optimal cell geometry for maximum performance, with a predicted three-fold increase in sensitivity over current technology four times larger. To fabricate the cell, we developed the first organic-free method to suspend graphene over 10 − 20 μm apertures. Auger electron and Raman spectroscopy, and scanning electron and transmission electron microscopy (TEM) confirm high quality graphene with no measurable contamination beyond that from air exposure. This method applies not only to construct the cell, but also for fundamental studies of graphene where the utmost cleanliness and structural integrity are crucial. Furthermore, our method finds commercial value as the long-sought graphene TEM grid. We present a theoretical analysis of interferometric optical read-out. We then implement atomic force microscopy to mechanically characterize and report the temperature-dependent deflection (up to 60◦C) of our cell, demonstrating a functioning proof-of-concept device. Finally, we examine and utilize the exquisite thermal properties of hydrogenated graphene to produce a microbolometer with responsivity of R ≈ 10^5 V/W, in fair competition with commercially available Si bolometers.
Nous tentons de remplir "le trou THz" pour les détecteurs hautes performance en utilisant les propriétés mécaniques du graphène dans une cellule miniature de Golay ainsi que les propriétés électriques du graphène hydrogéné dans un microbolomètre. La cellule de Golay est le détecteur le plus sensible de THz à température pièce sur le marché, mais requiert une miniaturisation comme première étape d'intégration à une grille d'imagerie. En ce moment, des membranes ultra minces pour des cellules de Golay miniatures souffrent de responsivité diminuée lorsque les dimensions latérales sont réduites. Nous proposons le graphène comme candidat idéal pour la membrane, car sa dureté élastique minimale grâce à sa nature monoatomique permet un agrandissement jusqu'à l'échelle microscopique. Nous simulons la déflection de la membrane en fonction de la température et analysons la géométrie de cellule optimale avec une sensibilité prédite de tripler par rapport à la technologie actuelle qui est quatre fois plus grande. Afin de fabriquer cette cellule, nous avons développé la première méthode de transfert de graphène suspendu sans organiques sur une échelle de 10 − 20 μm. La microscopie Raman, Auger, à balayage électronique et à transmission électronique (TEM) confirment du graphène de haute qualité sans aucune contamination à part celle de l'air ambiant. Cette méthode s'applique non seulement pour construire la cellule, mais aussi pour des études fondamentales du graphène ou la propreté est d'une importance capitale. Par ailleurs, nos méthodes culminent dans une application commerciale soit celle d'une grille TEM à base de graphène. Nous présentons une analyse théorique de lecture optique interférométrique. Nous implémentons ensuite de la microscopie par force atomique afin de caractériser mécaniquement et rapporter la déflection à température pièce (jusqu'à 60◦C) de notre cellule, démontrant ainsi la validation du concept. Finalement, nous examinons et utilisons les propritétés thermiques du graphène hydrogéné afin de produire un microbolomètre avec une responsivité de R ≈ 10^5 V/W, ce qui est comparable avec des bolomètres commerciaux à base de Si.
9

Barnes, Mark. "Terahertz emission from ultrafast lateral diffusion currents within semiconductor devices." Thesis, University of Southampton, 2014. https://eprints.soton.ac.uk/363127/.

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Single cycle THz emission from unbiased semiconductor devices after ultrafast carrier excitation can be attributed to surge currents on the surface of the device. These currents are due to either drift currents where carriers are accelerated by an internal electric field perpendicular to the surface (surface field effect) or diffusion currents where a separation of charge forms due to electrons and holes having different mobilities (photo-Dember effect). This surface emission is difficult to out couple from the semiconductor device as the emission is parallel to the surface of the semiconductor. This difficulty in out coupling led to a decline in interest for these types of emitters in preference to photoconductive emitters which today are the standard type of emitters used in THz time domain spectroscopy. In recent years a new type of surface emitter based on lateral diffusion currents (lateral Dember currents) has been proposed and demonstrated. This work acted as the initial inspiration for the work described within this thesis. The emission was attributed to net diffusion currents that formed from an initially asymmetrical carrier distribution that formed due to partially masking the pump spot with a metal mask. Simulations of the situation revealed that diffusion alone cannot account for the observed THz emission from these devices. From this I have extended the mechanism taking into account lateral diffusion currents and dipole suppression under a metal mask. Along with theoretical arguments experimental evidence is given that supports this new theory. These devices are further explored experimentally giving insights into the nature of the emission and how it depends on different pump parameters and external electric fields. Based on this new interpretation I present the design, fabrication, and testing of multiplex emitters that are are comparable with commercial photoconductive emitters in both power and band-width.
10

Smith, Shane Raymond. "Construction and characterization of a multi-antenna terahertz time-domain spectroscopy setup." Thesis, Stellenbosch : Stellenbosch University, 2015. http://hdl.handle.net/10019.1/96733.

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Thesis (MSc)--Stellenbosch University, 2015.
ENGLISH ABSTRACT: Recent progress in laser and semiconductor technology has allowed for far easier generation and measuring of coherent terahertz radiation, a previously difficult region in the radiation spectrum to coherently generate. Time based terahertz spectroscopy is a rather unique form of spectroscopy. Not only is it time based, but the electric field is measured instead of the intensity. This allows for the measurement of the complex refractive index. From this one can obtain certain details of the structure and environment of the sample being studied. A terahertz time-domain spectroscopy setup was constructed during this project. This setup used low temperature grown GaAs photoconductive antennae, with multiple antenna size options available for both the receiving and transmitting antennae. After the construction and alignment of this setup, the antennae were characterized. Lastly measurements were performed on the background, sugar and silicon to demonstrate the capabilities of the system. It was found that the measured terahertz electric field amplitude increased with the intensity of the pump pulse and that the amplitude of the measured terahertz electric field was dependent on the polarization of the pump pulse. As the size of the antenna was increased so too did the amplitude of the measured electric field and conversely the bandwidth of the measured terahertz electric field decreased with the increase of antenna size. This held true for both the transmitting and receiving antennae.
AFRIKAANSE OPSOMMING: Danksê onlangse tegnologiese onwikkelings in lasers en halfgeleier het dit veel makliker geraak om terahertz straling te genereer wat fase samehangendheid toon. Voor hierdie ontwikkelings was straling in hierdie spektrale gebied moeilik om te genereer op ’n wyse wat fase samehangendheid toon. Tyd verwante terahertz spektroskopie is taamlik uniek, aangesien die metings in tyd geneem word en die elektriese veld amplitude word pleks van die intensiteit gemeet. Een van die voordele van hierdie metode is dat dit toelaat vir die meeting van die komplekse brekingsindeks van monsters. Dit is moontlik om van die komplekse brekingsindeks strukturele en omgewings eienskappe van die monster af te lei. Gedurende die projek was ’n tyd verwante terahertz spektroskopie sisteem gebou wat gebaseer was op lae temperatuur gegroeide GaAs foto-geleidende antennas. Die sisteem bevat vier antennas van verskillende groottes aan beide die sender en ontvanger kant. Die antennas was gekarakteriseer na die bou en belyning van die terahertz sisteem en meetings was gedoen op die agtergrond, suiker en silikon om die sisteem se vermoë te demonstreer. Dit was gevind dat die amplitude van die gemete terahertz elektriese veld groter geraak het soos die intensiteit van die pomp puls verhoog was en dat die die amplitude van die gemete terahertz electriese veld afhanklik was van die polarisasie van die pomp puls. Die amplitude van van die gemete terahertz elektriese veld het gegroei met die grootte van die antenna, maar hoe groter die antenna geraak het, hoe kleiner was die bandwydte van die gemete terahertz elektriese veld. Hierdie was die geval vir beide die sender en ontvanger antennas.
11

Yanson, Dan Andreyevitch. "Generation of terahertz-modulated optical signals using AlGaAs/GaAs laser diodes." Thesis, University of Glasgow, 2004. http://theses.gla.ac.uk/2837/.

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The Thesis reports on the research activities carried out under the Semiconductor-Laser Terahertz-Frequency Converters Project at the Department of Electronics and Electrical Engineering, University of Glasgow. The Thesis presents the work leading to the demonstration of reproducible harmonic modelocked operation from a novel design of monolithic semiconductor laser, comprising a compound cavity formed by a 1-D photonic-bandgap (PBG) mirror. Modelocking was achieved at a harmonic of the fundamental round-trip frequency with pulse repetition rates from 131 GHz up to a record-high frequency of 2.1 THz. The devices were fabricated from GaAs/AlGaAs material emitting at a wavelength of 860 nm and incorporated two gain sections with an etched PBG reflector between them, and a saturable absorber section. Autocorrelation studies are reported, which allow the device behaviour for different modelocking frequencies, compound cavity ratios, and type and number of intra-cavity reflectors to be analyzed. The highly reflective PBG microstructures are shown to be essential for subharmonic-free modelocking operation of the high-frequency devices. It was also demonstrated that the multi-slot PBG reflector can be replaced with two separate slots with smaller reflectivity. Some work was also done on the realisation of a dual-wavelength source using a broad-area laser diode in an external grating-loaded cavity. However, the source failed to deliver the spectrally-narrow lines required for optical heterodyning applications. Photomixer devices incorporating a terahertz antenna for optical-to microwave down-conversion were fabricated, however, no down-conversion experiments were attempted. Finally, novel device designs are proposed that exploit the remarkable spectral and modelocking properties of compound-cavity lasers. The ultrafast laser diodes demonstrated in this Project can be developed for applications in terahertz imaging, medicine, ultrafast optical links and atmospheric sensing.
12

Kotiranta, Mikko [Verfasser], Viktor [Akademischer Betreuer] Krozer, and Claudio [Akademischer Betreuer] Paoloni. "Development of terahertz vacuum electronics for array receivers / Mikko Kotiranta. Gutachter: Viktor Krozer ; Claudio Paoloni." Frankfurt am Main : Univ.-Bibliothek Frankfurt am Main, 2013. http://d-nb.info/1044413441/34.

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13

Shang, Xiaobang. "SU-8 micromachined terahertz waveguide circuits and coupling matrix design of multiple passband filters." Thesis, University of Birmingham, 2011. http://etheses.bham.ac.uk//id/eprint/3087/.

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This thesis presents the designs and measurement performance of nine SU-8 micromachined waveguide circuits operating at WR-10 band (75-110 GHz), WR-3 band (220-325 GHz) and WR-1.5 band (500-750 GHz). Two thick SU-8 photoresist micromachining processes, namely, the separate single-layer process and the joint two-layer process, are developed to fabricate these terahertz waveguide circuits. In order to achieve accurate and secure interconnections with measurement network analyzers, two calibrated measurement methods for micromachined waveguide circuits are proposed. The measurement performance of these micromachined circuits is excellent in terms of very low insertion loss. The design of multiple-passband filters using coupling matrix optimisation is also discussed in this thesis. The optimisation is performed on the coupling matrix and a genetic algorithm (GA) is employed to generate initial values for the control variables for a subsequent local optimisation (sequential quadratic programming - SQP search). The novel cost function presented in this thesis measures the difference of the frequency locations of reflection and transmission zeros between the response produced by the coupling matrix and the ideal response. An eighth-order X-band dual-band waveguide filter with all capacitive coupling irises is fabricated and measured to verify the design technique.
14

Geffroy, Clément. "Impulsions ultra-courte d'électron unique pour les qubits volants." Electronic Thesis or Diss., Université Grenoble Alpes, 2023. http://www.theses.fr/2023GRALY101.

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La seconde révolution quantique du XXe siècle a contribué à un essor technologique en physique du solide. Les techniques d'ingénierie des matériaux couplées à celles de nanofabrication moderne ont favorisé le perfectionnement de sources d'électrons uniques sur demande. De par leur incroyable précision, elles sont désormais utilisées en métrologie et leur potentiel s'étend au récent domaine de l'optique quantique électronique, notamment à un candidat prometteur pour l’information quantique : le qubit volant électronique. Ces bits quantiques sont créés par de courtes impulsions de tension et la manipulation de leur état quantique se fait à la volée. À ce jour, l’impulsion de tension la plus courte atteint 27 ps, sur puce, dans un environnement cryogénique. Cependant, en raison de l'atténuation et de la dispersion du signal dans les lignes coaxiales, l'accès à des régimes quantiques électroniques d’échelle temporelle plus rapide demeure hors de portée.En revanche, grâce à l'avènement des lasers à impulsions ultracourtes et aux progrès en photonique et plasmonique, la technologie des photocommutateurs peut permettre la génération d'impulsions électromagnétiques de l'ordre de la picoseconde. La large bande passante de ces technologies opto-électroniques THz pourrait venir à bout de la barrière technique à laquelle sont confrontés les équipements électroniques standards. Bien que largement développées dans le cadre d'applications à température ambiante, les démonstrations d'intégration de ces technologies à une architecture quantique en environnement cryogénique restent toujours peu nombreuses. La réalisation d'une telle expérience débloquerait de nouvelles voies de recherche pour l'étude des dynamiques des dispositifs quantiques électroniques en physique du solide.Dans ce manuscrit, nous présentons la mise au point d'une installation expérimentale pouvant générer des impulsions de tension picoseconde en environnement cryogénique pour des applications de qubits volants. Un laser femtoseconde génère des impulsions qui sont injectées dans des fibres optiques intégrées à basse température. Fabriqué à la surface de GaAs basse température (LT-GaAs), un photocommutateur est cointégré au circuit quantique formé à partir d'un gaz d'électrons bidimensionnels (2DEG) à haute mobilité. Du fait de la réponse opto-électronique extrêmement rapide du LT-GaAs, le photocommutateur convertit les impulsions optiques en impulsions de tension d'une durée de quelques picosecondes seulement. Grâce à des guides d'ondes coplanaires (CPW) THz, l'impulsion est acheminée vers le 2DEG, où elle est utilisée comme source d'électrons uniques ultracourts.Pour effectuer la mesure pompe-sonde et résoudre le profil dynamique de telles impulsions, une installation expérimentale originale, impliquant des positionneurs piézo-électriques et des protocoles d'alignement à basses températures, a été mise en place. Comme preuve de concept, nous rapportons d'abord la caractérisation à 300 K d'impulsions électroniques d'une durée de 1.9 ps. Dans un deuxième temps, nous refroidissons le système à 4K, élargissant la preuve de concept aux environnements cryogéniques par la mesure d'impulsions de 2.3 ps. Ensuite, en intégrant une structure 2DEG au circuit THz, des excitations de plasmons THz ont pu être observées dans une cavité Fabry-Pérot. La fréquence de leur mode fondamental a été comparée à un modèle analytique, révélant des informations sur la densité de porteur du gaz électronique sous illumination. Parallèlement, des développements importants ont été menés sur la conception des CPWs dans le but de minimiser les réflexions indésirables du signal ainsi que les pertes par dispersion. Ces travaux ouvriront la voie à l'intégration d'impulsions de tension picoseconde dans les dispositifs quantiques nanoélectroniques et le contrôle de qubits volants électroniques par des grilles électrostatiques THz ultrarapides
The second quantum revolution of the 20th century contributed to a technological expansion in solid-state physics. Modern nanofabrication coupled to material processing techniques have facilitated the development of on-demand single-electron sources. With their remarkable precision, they are currently used for metrology purposes and hold key potential for the recent field of research of electron quantum optics, including a promising candidate for quantum information: the electron flying qubit. These quantum bits are created by short voltage pulses and manipulation of their quantum state occurs on-the-fly. The shortest voltage pulse reported so far attains 27 ps, on-chip, in a cryogenic environment. However, suffering from attenuation and dispersion in coaxial lines, accessibility to electronic quantum regimes at faster time scale remains out-of-reach.On the contrary, empowered by the advent of ultrafast lasers and progress in photonics and plasmonics, photo-conductive-switch technology can allow the generation of electromagnetic pulses with picosecond duration. The large bandwidth of these THz opto-electronic technologies could overcome the technical bottleneck faced by standard electronic equipment. While they have been widely developed for room temperature applications, demonstrations of their integration along-side a quantum architecture in a cryogenic environment are still limited. The realisation of such an experiment would unlock new research directions for studying the dynamics of solid-state electronic quantum devices.In this manuscript, we present the development of an experimental setup to generate picosecond voltage pulses in a cryogenic environment for flying qubit applications. A femtosecond laser generates pulses that are injected into optical fibres and integrated at low temperatures. Fabricated on the surface of Low Temperature grown GaAs (LT-GaAs), a photoconductive-switch is co-integrated to the quantum circuit formed on a high mobility two-Dimensional Electron Gas (2DEG). Owing to the extremely fast opto-electronic response of the LT-GaAs, the photo-conductive device converts optical pulses into voltage pulses with a duration as short as a few picoseconds. Using a THz CoPlanar Waveguide (CPW) circuit, the pulse is conveyed toward the 2DEG, where it is used as an ultra-short single-electron source.To perform pump-probe measurement and resolve the dynamic profile of such pulses, an original experimental setup, involving piezo-electric positioners and alignment protocols at low-temperatures, was implemented. As proof of concept, we first report the characterisation at 300 K of electronic pulses with 1.9 ps duration. In a second step, we cool down the system to 4 K and measure 2.3 ps wide pulses, thus expanding the proof of concept to cryogenic environments. Then, by integrating a 2DEG structure along-side the THz circuit, we were able to excite THz plasmons in a Fabry-Pérot cavity. The characteristic frequency of their fundamental mode was compared to an analytical model that revealed information about the carrier density of the electron gas under illumination. In parallel, extensive developments were carried out on the design of CPWs in order to minimise undesirable signal reflections as well as dispersion losses. Finally, with the prospect of measuring and controlling the propagation of picosecond electron pulse in quantum channels directly with ultrafast THz electrostatic gates, the fabrication of the next generation of devices was initiated. This work will pave the way for on-chip integration of picosecond voltage pulses into quantum nanoelectronics devices and ultrafast control of electronic flying qubits
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Michal, Vratislav. "Design of CMOS analog integrated circuits as readout electronics for High-TC superconductor and semiconductor terahertz bolometric sensors." Phd thesis, Université Pierre et Marie Curie - Paris VI, 2006. http://tel.archives-ouvertes.fr/tel-00417838.

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Cette thèse porte sur la conception d'un circuit intégré CMOS pour l'électronique de lecture de capteurs bolométriques à base de semiconducteurs ou supraconducteurs haute-température. Dans ce manuscrit, une chaîne de traitement du signal est étudiée. Elle est composée d'un amplificateur différentiel à gain fixé pour des températures de 40 à 400K, ainsi que d'un filtre de fréquence passe-bas actif à haute dynamique. Une architecture optimale d'amplificateur est définie sans contre-réaction, permettant d'atteindre une large bande passante (17MHz pour un gain de 40dB), une consommation réduite (Iq = 2mA) et une haute impédance d'entrée. Afin de fixer le gain avec précision dans la structure CMOS, deux méthodes différentes sont présentées et vérifiées sur un circuit intégré. Par la suite, le comportement des filtres dans la bande d'atténuation est étudié afin d'augmenter la fréquence de coupure maximale. Deux structures avec une faible influence des éléments actifs « réels » sont conçues: le filtre Sallen-Key amélioré et la structure basée sur un convoyeur du courant CCII-. Enfin, nous présentons un CCII- intégré en CMOS ayant une très faible impédance de sortie.
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Kernan, Forest Emerson. "Material Characterization of Zinc Oxide in Bulk and Nanowire Form at Terahertz Frequencies." PDXScholar, 2012. https://pdxscholar.library.pdx.edu/open_access_etds/510.

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Many new applications are being proposed and developed for use in the terahertz (THz) frequency region. Similarly, many new materials are being characterized for possible use in this area. Nanostructured forms are of particular interest since they may yield desirable properties, but they remain especially challenging to characterize. This work focuses on the characterization of zinc oxide (ZnO) in bulk and nanowire form. A method for characterizing nanostructures at THz by use of a parallel-plate waveguide (PPWG) is presented. This method is novel in that it is simple, both in theory and practice, and does not require the use of complex measurement techniques such as differential and double modulated terahertz time-domain spectroscopy (THz-TDS). To enable easy evaluation of the quality of the result the maximum deviation in the material response measurement is presented. The dielectric properties of bulk and nanowire ZnO as determined by THz-TDS measurements are reported, and the electrical conductivity extracted from both are presented for comparison. Experimental results are compared to the well established pseudo-harmonic phonon dielectric model. Shortcomings in the pseudo-harmonic phonon model are resolved when coupled with a modified Drude model. This work will enable the determination of THz material properties from nano-scale and very-thin film materials with better reliability and practicality than what has been possible until now.
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Delfini, Duccio. "Développement de récepteurs hétérodynes multi-pixels pour les futures missions spatiales." Thesis, Paris Sciences et Lettres (ComUE), 2018. http://www.theses.fr/2018PSLEO019/document.

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L'observation du milieu interstellaire est très importante aux fréquences mm / (sub) mm / Thz pour comprendre comment se forment les étoiles et les planètes. De telles observations dépendent des récepteurs hétérodynes. Ces instruments atteignent une résolution spectrale très élevée en convertissant un signal haute fréquence à une fréquence plus basse. Dans un récepteur hétérodyne, le signal collecté est superposé sur un signal artificiel, bien connu, monochromatique, généré par l'oscillateur local (OL), donc ce signal artificiel est plus-ou-moins la fréquence du signal du ciel. Le mélangeur produit le signal de la fréquence du battement. Cette fréquence est équivalente à la différence entre le OL et la fréquence du signal du ciel. Ainsi, le signal du ciel est traduit à une fréquence plus basse, pour qu'il soit facile à amplifier et détecter. Habituellement, les récepteurs hétérodynes ont seulement un pixel spatial avec de nombreux canaux en fréquences. Notre objectif est de développer des réseaux de centaines de pixels. Pour faire cela, certains composants de l'hétérodyne doivent être repensés radicalement, tels que l'antenne de réception et le diviseur de faisceau OL. En effet, l'antenne réceptrice est généralement constituée d'une antenne à double fentes sur une lentille, ou d'une antenne cornet. Par contre, ces antennes ne sont pas les meilleurs choix pour des réseaux de nombreux pixels car elles doivent être usinées et montées individuellement. Au lieu de cela, il est commode de développer des structures planaires qui peuvent être facilement produites toutes ensembles. En particulier, nous avons conçu et simulé des réseaux d'antennes patch, de réseaux de transmission, et de plaques de zone. Le réseau d'antennes patch consiste d'un réseau de patchs métalliques reliés par une ligne microruban et séparés du plan de masse par un substrat diélectrique. Cette configuration profite du facteur du réseau pour réduire la largeur de faisceau du signal collecté. Cependant, nos simulations nous montrent que la bande RF des réseaux d'antennes patch est étroite. Pour cette raison, nous avons analysé la possibilité d'utiliser une autre solution : le réseau de transmission. C'est un réseau de plusieurs cellules qui déphase une onde afin de transformer son front de phase de forme planaire en forme sphérique. Le but de la matrice de transmission est de focaliser le faisceau collecté vers une antenne et mélangeur à double fentes. La thés démontre qu'un effet de focalisation satisfaisant est atteint sur une ligne. Nous avons fabriqué un tel réseau de transmission et l'avons testé en laboratoire. En raison des petites dimensions de quelques millimètres, ces tests sont difficiles à réaliser. Au sein de l'erreur de mesure, la conception et les simulations sont cohérentes. Une troisième option (d'une lentille planaire) a été étudiée dans la thèse : la plaque de zone. C'est un type particulier de réseau de transmission qui ne présente que deux déphasages de 0 ° et 180 °. Le plaque de zone focalise bien, mais est peu efficace. La dernière partie de la thèse introduit un type de diviseur de faisceau particulier qui permet une division du faisceau du signal OL vers un réseau de quatre mélangeurs très serrés. Diviser le faisceau avec des angles suffisamment petits est très difficile avec les réseaux de Fourier et Dammann classiques. Pour cette raison la méthode que nous avons proposée pour concevoir un tel diviseur est très novatrice. En effet, il permet la formation de motifs de faisceaux de forme arbitraire, qui ne sont pas limités par les ordres de diffraction. Les simulations montrent des efficacités allant jusqu'à 80% qui sont très bonnes en comparaison avec les réseaux classiques. En résumé, dans cette thèse, j'ai essayé plusieurs moyens radicalement différents pour simplifier les récepteurs hétérodynes et ouvrir la voie aux grandes matrices hétérodynes avec des centaines de pixels
The observation of the interstellar medium is very important at mm/(sub)mm/THz frequencies to understand how stars and planets form. Generally such observations rely on heterodyne receivers. These are instruments that achieve very high spectral resolution by down converting a high frequency signal towards a lower frequency one. In a heterodyne receiver the incoming signal is superimposed onto an artificial, well-known, monochromatic signal generated by the local oscillator (LO), chosen to be close to the frequency of the sky signal. The mixer produces the beat frequency signal. It has a frequency equivalent to the difference between the LO and sky signal frequency. Thus the sky signal is translated to a lower frequency, and it is easier to amplify and detect. Usually heterodyne receivers have only one spatial pixel with many frequency channels. Some prototypes have been realized recently with few pixels. Our objective is to develop arrays of hundreds of pixels. In order to do that, some components which compose the heterodyne receiver must be radically rethought, such as the receiving antenna and the LO beam divider.Indeed the receiving antenna generally consists of a double slot antenna on a lens, or a horn antenna. Such antennas are not the best choice for arrays of many pixels since they have to be machined and mounted individually. Instead it is convenient to develop planar structures which can be easily produced in bulk in a single process. In particular we designed and simulated arrays of patch antennas, transmit-arrays and zone plates. The array of patch antennas consists of an array of metallic patches connected via a microstrip line and separated from the ground plane by a dielectric substrate. This configuration takes advantage of the array factor to reduce the beamwidth of the incoming signal in place of the lens. However our simulations showed the array of patch antennas to be quite narrowband for a general purpose application, and quite difficult to realize. For this reason we also analyzed the possibility to use another solution such as the transmit-array. It is an array of several cells which provide a certain phase shift to an incoming wave in order to transform its phase front from planar to spherical. The purpose of the transmit-array is to focus the incoming beam towards a double slot antenna and a mixer placed below it. The simulations showed that a good focusing effect can be reached on a line. We fabricated such a transmit-array and tested it in the laboratory. Because of the small dimensions of a few millimeters these tests are difficult to carry out. Within the measurement error design and simulations are consistent. A third option of a planar lens was studied in the thesis: the zone plate. This is a particular kind of transmit-array which presents only two phase shift of 0° and 180°. The zone plates focus well, but are unfortunately not very efficient.The final part of the thesis introduces a particular kind of beam divider which allows beam splitting of the LO signal towards an array of four very closely packed mixers. To split the beam with such small relative angles is very difficult with the classical Fourier and Dammann grating, for this reason the method we proposed to design such a beam divider is very innovative. Indeed it allows the forming of arbitrary shaped beam patterns, which are not limited by the diffraction orders. Simulations show efficiencies up to 80% which are very good in comparison with classical gratings.In summary in this thesis I have tried several radically different approaches to simplify heterodyne receivers and made a first step towards for large heterodyne arrays with hundreds of pixels
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Ahmadivand, Arash. "Plasmonic Nanoplatforms for Biochemical Sensing and Medical Applications." FIU Digital Commons, 2018. https://digitalcommons.fiu.edu/etd/3576.

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Plasmonics, the science of the excitation of surface plasmon polaritons (SPP) at the metal-dielectric interface under intense beam radiation, has been studied for its immense potential for developing numerous nanophotonic devices, optical circuits and lab-on-a-chip devices. The key feature, which makes the plasmonic structures promising is the ability to support strong resonances with different behaviors and tunable localized hotspots, excitable in a wide spectral range. Therefore, the fundamental understanding of light-matter interactions at subwavelength nanostructures and use of this understanding to tailor plasmonic nanostructures with the ability to sustain high-quality tunable resonant modes are essential toward the realization of highly functional devices with a wide range of applications from sensing to switching. We investigated the excitation of various plasmonic resonance modes (i.e. Fano resonances, and toroidal moments) using both optical and terahertz (THz) plasmonic metamolecules. By designing and fabricating various nanostructures, we successfully predicted, demonstrated and analyzed the excitation of plasmonic resonances, numerically and experimentally. A simple comparison between the sensitivity and lineshape quality of various optically driven resonances reveals that nonradiative toroidal moments are exotic plasmonic modes with strong sensitivity to environmental perturbations. Employing toroidal plasmonic metasurfaces, we demonstrated ultrafast plasmonic switches and highly sensitive sensors. Focusing on the biomedical applications of toroidal moments, we developed plasmonic metamaterials for fast and cost-effective infection diagnosis using the THz range of the spectrum. We used the exotic behavior of toroidal moments for the identification of Zika-virus (ZIKV) envelope proteins as the infectious nano-agents through two protocols: 1) direct biding of targeted biomarkers to the plasmonic metasurfaces, and 2) attaching gold nanoparticles to the plasmonic metasurfaces and binding the proteins to the particles to enhance the sensitivity. This led to developing ultrasensitive THz plasmonic metasensors for detection of nanoscale and low-molecular-weight biomarkers at the picomolar range of concentration. In summary, by using high-quality and pronounced toroidal moments as sensitive resonances, we have successfully designed, fabricated and characterized novel plasmonic toroidal metamaterials for the detection of infectious biomarkers using different methods. The proposed approach allowed us to compare and analyze the binding properties, sensitivity, repeatability, and limit of detection of the metasensing devices
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Yuan, Jiahui. "Cryogenic operation of silicon-germanium heterojunction bipolar transistors and its relation to scaling and optimization." Diss., Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/33837.

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The objective of the proposed work is to study the behavior of SiGe HBTs at cryogenic temperatures and its relation to device scaling and optimization. Not only is cryogenic operation of these devices required by space missions, but characterizing their cryogenic behavior also helps to investigate the performance limits of SiGe HBTs and provides essential information for further device scaling. Technology computer aided design (TCAD) and sophisticated on-wafer DC and RF measurements are essential in this research. Drift-diffusion (DD) theory is used to investigate a novel negative differential resistance (NDR) effect and a collector current kink effect in first-generation SiGe HBTs at deep cryogenic temperatures. A theory of positive feedback due to the enhanced heterojunction barrier effect at deep cryogenic temperatures is proposed to explain such effects. Intricate design of the germanium and base doping profiles can greatly suppress both carrier freezeout and the heterojunction barrier effect, leading to a significant improvement in the DC and RF performance for NASA lunar missions. Furthermore, cooling is used as a tuning knob to better understand the performance limits of SiGe HBTs. The consequences of cooling SiGe HBTs are in many ways similar to those of combined vertical and lateral device scaling. A case study of low-temperature DC and RF performance of prototype fourth-generation SiGe HBTs is presented. This study summarizes the performance of all three prototypes of these fourth-generation SiGe HBTs within the temperature range of 4.5 to 300 K. Temperature dependence of a fourth-generation SiGe CML gate delay is also examined, leading to record performance of Si-based IC. This work helps to analyze the key optimization issues associated with device scaling to terahertz speeds at room temperature. As an alternative method, an fT -doubler technique is presented as an attempt to reach half-terahertz speeds. In addition, a roadmap for terahertz device scaling is given, and the potential relevant physics associated with future device scaling are examined. Subsequently, a novel superjunction collector design is proposed for higher breakdown voltages. Hydrodynamic models are used for the TCAD studies that complete this part of the work. Finally, Monte Carlo simulations are explored in the analysis of aggressively-scaled SiGe HBTs.
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Sinha, Raju. "Tunable, Room Temperature THz Emitters Based on Nonlinear Photonics." FIU Digital Commons, 2017. http://digitalcommons.fiu.edu/etd/3172.

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The Terahertz (1012 Hz) region of the electromagnetic spectrum covers the frequency range from roughly 300 GHz to 10 THz, which is in between the microwave and infrared regimes. The increasing interest in the development of ultra-compact, tunable room temperature Terahertz (THz) emitters with wide-range tunability has stimulated in-depth studies of different mechanisms of THz generation in the past decade due to its various potential applications such as biomedical diagnosis, security screening, chemical identification, life sciences and very high speed wireless communication. Despite the tremendous research and development efforts, all the available state-of-the-art THz emitters suffer from either being large, complex and costly, or operating at low temperatures, lacking tunability, having a very short spectral range and a low output power. Hence, the major objective of this research was to develop simple, inexpensive, compact, room temperature THz sources with wide-range tunability. We investigated THz radiation in a hybrid optical and THz micro-ring resonators system. For the first time, we were able to satisfy the DFG phase matching condition for the above-mentioned THz range in one single device geometry by employing a modal phase matching technique and using two separately designed resonators capable of oscillating at input optical waves and generated THz waves. In chapter 6, we proposed a novel plasmonic antenna geometry – the dimer rod-tapered antenna (DRTA), where we created a hot-spot in the nanogap between the dimer arms with a very large intensity enhancement of 4.1×105 at optical resonant wavelength. Then, we investigated DFG operation in the antenna geometry by incorporating a nonlinear nanodot in the hot-spot of the antenna and achieved continuously tunable enhanced THz radiation across 0.5-10 THz range. In chapter 8, we designed a multi-metallic resonators providing an ultrasharp toroidal response at THz frequency, then fabricated and experimentally demonstrated an efficient polarization dependent plasmonic toroid switch operating at THz frequency. In summary, we have successfully designed, analytically and numerically investigated novel THz emitters with the advantages of wide range tunability, compactness, room temperature operation, fast modulation and the possibility for monolithic integration, which are the most sought after properties in the new generation THz sources.
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Hessami, Pilehrood Saeid. "Electronic properties of semiconductor nanostructures under terahertz radiation." Access electronically, 2006. http://www.library.uow.edu.au/adt-NWU/public/adt-NWU20061026.162405/index.html.

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Kasjoo, Shahrir Rizal. "Novel electronic nanodevices operating in the terahertz region." Thesis, University of Manchester, 2012. https://www.research.manchester.ac.uk/portal/en/theses/novel-electronic-nanodevices-operating-in-the-terahertz-region(b5cacff4-272c-44fe-b02d-3d500799d954).html.

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A novel electronic nanodevice, the self-switching diode (SSD), is explored in this work. This includes exploration of its ability to operate as an ultra-high-speed detector at room temperature, its low-frequency noise properties, and its application to terahertz (THz) imaging. The SSDs have been realised using two novel nanolithography techniques, known as atomic-force microscope lithography and electron-beam lithography.The SSD is a unipolar two-terminal device. It has a nonlinear current-voltage characteristic which resembles the behaviour of a conventional diode. The planar structure of the SSD provides intrinsically low parasitic capacitance that enables signal rectification at higher speed than a standard vertical diode. It also allows the fabrication of a large number of SSDs in a single lithography step without the need for interconnection layers, which may introduce parasitic elements. Indeed, this is the key feature of the SSD that makes the whole fabrication process simpler, faster and lower cost, when compared with other conventional electronic nanodevices. By using large arrays of SSDs connected in parallel, the overall resistance of the devices can be reduced.A large SSD array, fabricated onto a two-dimensional electron gas (2DEG) in an InGaAs/InAlAs heterostructure material, has been defined within the fingers of an interdigital structure, located in the gaps of a coplanar waveguide. Despite of the large impedance mismatch between the SSD array and the measurement systems, the device successfully converted radio-frequency (RF) signals with frequencies up to 3 GHz (i.e., the highest frequency of the instruments used in the RF experiments) into usable DC power which may be employed in many RF applications. The obtained room-temperature results are matched very well with the theory.The development of the SSD-based THz detectors is a key objective of this work. The SSDs, coupled with either spiral or bow-tie antennas, have been fabricated onto a 2DEG in an AlGaAs/GaAs heterostructure material. Room-temperature detection of free-space radiation up to 1.5 THz using a free-electron laser has been achieved by the SSDs-based detector at unbiased condition. To the best knowledge of the author, this is the highest speed reported in room-temperature nanorectifiers to date.The first experimental study on low-frequency noise properties of the SSDs was also performed. The measurements were carried out at room and elevated temperatures using a two-channel cross-correlation technique. The noise performances of the SSDs, which are important in any detector, are discussed in terms of noise-equivalent power and corner frequency. Both parameters are comparable to those reported for state-of-the-art Schottky diodes. The observed noise in the SSDs is described using Hooge’s mobility fluctuation theory. Other properties extracted from the results obtained at elevated temperatures, such as activation energy, are also presented. Based on the excellent noise properties measured, an active THz imaging experiment using an SSD-based detector was carried out successfully. A low-cost blackbody radiation source (rather than a laser) was used as a continuous-wave THz generator. Several THz images of hidden objects (e.g., a USB connector underneath its plastic cover) have been obtained by means of raster scanning.
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Qui, Junyi. "Terahertz spectrometry applied to proteins." Thesis, Queen Mary, University of London, 2017. http://qmro.qmul.ac.uk/xmlui/handle/123456789/24777.

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Electromagnetic radiation from the radio waves used in nuclear magnetic resonance spectroscopy through to X-rays used in crystallography have provided a wealth of knowledge about the structure, function, and dynamics of protein molecules. Terahertz waves, the topic of this thesis, are lower in frequency than radiation from the infrared, not to the frequencies of individual bond vibrations, but to the frequency range where slower longer range protein librations (low frequency vibrations) are expected to occur. The role of low frequency protein dynamics remains controversial, with some arguing that these motions are crucial for enzyme and protein function. Terahertz spectroscopy may provide key evidence to contribute to this interdisciplinary debate. In this thesis, terahertz (THz) spectroscopy has been applied in studying a number of proteins experimentally. In the first results chapter, the effect of protein concentration and ionic strength in the 0.1-2.5 THz region was investigated using Terahertz time domain spectroscopy. The results confirm the presence of terahertz excess for a number of proteins, which results from the increased absorption of THz waves when protein is introduced into the system. THz spectroscopy was then used to detect the difference between a folded protein, myoglobin, and folding intermediates, including the molten globule form, apomyoglobin. The results collected using THz spectroscopy were unable to differentiate between the folded and molten globule states. A further study was susceptible to the formation of higher order protein complexes and explored structures formed using PduA*. These experiments were primarily biochemical in nature with showing that PduA* assembles into nanotubes of 20nm diameter in vitro. The final results chapter explores the sub-THz circular dichroism signal from a vector network analyser driven by quasi-optical circuits. Wherever possible, the THz experiments were benchmarked using established analytical techniques.
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Zimmer, Aaron A. "Terahertz free-electroni laser optical design and simulation." Monterey, California : Naval Postgraduate School, 2010. http://edocs.nps.edu/npspubs/scholarly/theses/2010/Jun/10Jun_Zimmer.pdf.

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Thesis (M.S. in Applied Physics)--Naval Postgraduate School, June 2010.
Thesis Advisor(s): Colson, William B. ; Second Reader: Armstread, Robert L. "June 2010." Description based on title screen as viewed on July 15, 2010. Author(s) subject terms: Free Electron Laser, FEL, Terahertz, THz, FEL Simulations, Beam Clipping. Includes bibliographical references (p. 55-57). Also available in print.
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Li, Xian Ph D. Massachusetts Institute of Technology. "Terahertz-field-induced nonlinearity in phonons, electrons and spins." Thesis, Massachusetts Institute of Technology, 2019. https://hdl.handle.net/1721.1/122713.

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Thesis: Ph. D., Massachusetts Institute of Technology, Department of Chemistry, 2019
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 189-210).
In this thesis, I describe work aimed at understanding nonlinear material responses initiated by strong terahertz (THz) field excitation. I discuss two aspects of nonlinear THz spectroscopy in condensed-matter materials: developments of experimental THz capabilities and spectroscopy methods and their applications in investigating ultrafast nonlinear dynamics in different classes of materials. I first describe the THz generation, detection and spectroscopy methods, which are the basis of all of our studies. We have generated strong single- and multi-cycle THz pulses covering several spectral ranges using inorganic and organic crystals and developed linear and nonlinear THz spectroscopy techniques to interrogate light-matter interactions based on different observables and/or symmetry criteria.
We have demonstrated a new method for studying time-domain electron paramagnetic resonance that allows us to measure THz-frequency fine structures of spin energy levels on a tabletop and have developed nonlinear two-dimensional (2D) magnetic resonance spectroscopy to distinguish nonlinear THz-spin interaction pathways. We also show that THz-pump, optical-probe spectroscopy, including THz field-induced second-harmonic generation spectroscopy and THz Kerr effect spectroscopy, can be extended to study phase transitions in quantum paraelectric and topological materials. We have employed the THz methods to drive and detect nonlinear responses from several degrees of freedom in the materials. We have demonstrated collective coherent control over material structure by inducing a quantum paraelectric to ferroelectric phase transition using intense THz electric fields in strontium titanate.
We show that a single-cycle THz field is able to drive ions along the microscopic pathway leading directly to their locations in a new crystalline phase on an ultrafast timescale. We have driven highly nonlinear lattice and electronic responses in a topological crystalline insulator by dynamically perturbing the protecting crystalline symmetry through THz phonon excitation. We have observed oscillations in optical reflectivity that may be associated with electronic gap opening and modulation in the topological surface states. Finally, we have demonstrated nonlinear manipulation of collective spin waves in a canted antiferromagnet using strong THz magnetic fields and we have observed full sets of the second- and third-order nonlinear responses in 2D THz magnetic resonance spectra, which are accurately reproduced in our numerical simulations.
by Xian Li.
Ph. D.
Ph.D. Massachusetts Institute of Technology, Department of Chemistry
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Rinzan, Mohamed Buhary. "Threshold extension of gallium arsenide/aluminum gallium arsenide terahetrz detectors and switching in heterostructures." unrestricted, 2006. http://etd.gsu.edu/theses/available/etd-10102006-204618/.

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Thesis (Ph. D.)--Georgia State University, 2006.
Title from title screen. Unil Perera, committee chair; Donald Edwards, Gennady Cymbaluyk, Mark Stockman, Nikolaus Dietz, Paul Wiita, committee members. Electronic text (348, 24-32 p. : ill.) : digital, PDF file. Description based on contents viewed June 8, 2007. Includes bibliographical references (p. 24-30, second sequence).
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Karisan, Yasir. "Full-wave Electromagnetic Modeling of Electronic Device Parasitics for Terahertz Applications." The Ohio State University, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=osu1419019102.

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Hwang, Harold Young. "Nonlinear terahertz spectroscopy of electronic and vibrational responses in condensed matter systems." Thesis, Massachusetts Institute of Technology, 2012. http://hdl.handle.net/1721.1/73174.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemistry, 2012.
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis.
Includes bibliographical references.
In this work, I describe experiments utilizing high-field terahertz (THz) pulses to initiate nonlinear responses in several classes of materials. We have developed several methods for interrogating the nonlinear THz response of materials including collinear and noncollinear THz-pump/THz-probe spectroscopy, and THz-pump/optical probe spectroscopies including THz Kerr effect spectroscopy. We have observed nonlinear free-carrier absorption, occurring through the saturation of free-carrier mobility in bulk semiconductors. We have demonstrated that highly energetic electrons in the conduction band can generate electron-hole pairs in indium antimonide, and have elucidated the dynamics of the carrier generation process. We have observed nonlinear conductivity responses in graphene, showing that a strong THz pulse can heat the electron distribution leading to saturable absorption in the THz range. We have demonstrated THz-induced optical anisotropy in simple liquids, allowing for the measurement of subsequent orientational dynamics. We have driven nonlinear vibrational dynamics in ferroelectrics, demonstrating that the strong anharmonicity of lattice vibrational modes can induce an anisotropic optical response. We have begun to study nonlinear vibrational responses in molecular crystals, which is of importance in mode coupling and energy transfer processes in the THz range. Finally, we have driven nonlinear metamaterial responses in gallium arsenide and vanadium dioxide. In GaAs, we have shown that metamaterial properties may be tuned by an intense THz field if the substrate material (GaAs) is changed by the incident THz pulse, and we have demonstrated carrier multiplication locally in the metamaterial split ring resonator gaps where substantial electric field enhancement occurs. In VO2, we have shown that THz radiation can drive an insulator-to-metal phase transition, opening up new possibilities in the control of the states of matter with THz fields. This work has demonstrated only a few of the capabilities made possible by the interaction of intense THz radiation with matter, and provides a general framework to open up new research in a nascent field.
by Harold Young Hwang.
Ph.D.
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Armakavicius, Nerijus. "Study of novel electronic materials by mid-infrared and terahertz optical Hall effect." Licentiate thesis, Linköpings universitet, Halvledarmaterial, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-142220.

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Development of silicon based electronics have revolutionized our every day life during the last three decades. Nowadays Si based devices operate close to their theoretical limits that is becoming a bottleneck for further progress. In particular, for the growing field of high frequency and high power electronics, Si cannot offer the required properties. Development of materials capable of providing high current densities, carrier mobilities and high breakdown fields is crucial for a progress in state of the art electronics. Epitaxial graphene grown on semi-insulating silicon carbide substrates has a high potential to be integrated in the current planar device technologies. High electron mobilities and sheet carrier densities make graphene extremely attractive for high frequency analog applications. One of the remaining challenges is the interaction of epitaxial graphene with the substrate. Typically, much lower free charge carrier mobilities, compared to free standing graphene, and doping, due to charge transfer from the substrate, is reported. Thus, a good understanding of the intrinsic free charge carriers properties and the factors affecting them is very important for further development of epitaxial graphene. III-group nitrides have been extensively studied and already have proven their high efficiency as light sources for short wavelengths. High carrier mobilities and breakdown electric fields were demonstrated for III-group nitrides, making them attractive for high frequency and high power applications. Currently, In-rich InGaN alloys and AlGaN/GaN high electron mobility structures are of high interest for the research community due to open fundamental questions. Electrical characterization techniques, commonly used for the determination of free charge carrier properties, require good ohmic and Schottky contacts, which in certain cases can be difficult to achieve. Access to electrical properties of buried conductive channels in multilayered structures requires modification of samples and good knowledge of the electrical properties of all electrical contact within the structure. Moreover, the use of electrical contacts to electrically characterize two-dimensional electronic materials, such as graphene, can alter their intrinsic properties. Furthermore, the determination of effective mass parameters commonly employs cyclotron resonance and Shubnikov-de Haas oscillations measurements, which require long scattering times of free charge carriers, high magnetic fields and low temperatures. The optical Hall effect is an external magnetic field induced optical anisotropy in  conductive layers due to the motion of the free charge carriers under the influence of the Lorentz force, and is equivalent to the electrical Hall effect at optical frequencies. The optical Hall effect can be measured by generalized ellipsometry and provides a powerful method for the determination of free charge carrier properties in a non-destructive and contactless manner. In principle, a single optical Hall effect measurement can provide quantitative information about free charge carrier types, concentrations, mobilities and effective mass parameters at temperatures ranging from few kelvins to room temperature and above. Further, it was demonstrated that for transparent samples, a backside cavity can be employed to enhance the optical Hall effect. Measurement of the optical Hall effect by generalized ellipsometry is an indirect technique requiring subsequent data analysis. Parameterized optical models are fitted to match experimentally measured ellipsometric data by varying physically significant parameters. Analysis of the optical response of samples, containing free charge carriers, employing optical models based on the classical Drude model, which is augmented with an external magnetic field contribution, provide access to the free charge carrier properties. The main research results of the graduate studies presented in this licentiate thesis are summarized in the five scientific papers. Paper I. Description of the custom-built terahertz frequency-domain spectroscopic ellipsometer at Linköping University. The terahertz ellipsometer capabilities are demonstrated by an accurate determination of the isotropic and anisotropic refractive indices of silicon and m-plane sapphire, respectively. Further, terahertz optical Hall effect measurements of an AlGaN/GaN high electron mobility structures were employed to extract the two-dimensional electron gas sheet density, mobility and effective mass parameters. Last, in-situ optical Hall effect measurement on epitaxial graphene in a gas cell with controllable environment, were used to study the effects of environmental doping on the mobility and carrier concentration. Paper II. Presents terahertz cavity-enhanced optical Hall measurements of the monolayer and multilayer epitaxial graphene on semi-insulating 4H-SiC (0001) substrates. The data analysis revealed p-type doping for monolayer graphene with a carrier density in the low 1012 cm−2 range and a carrier mobility of 1550 cm2/V·s. For the multilayer epitaxial graphene, n-type doping with a carrier density in the low 1013 cm−2 range, a mobility of 470 cm2/V·s and an effective mass of (0.14 ± 0.03) m0 were extracted. The measurements demonstrate that cavity-enhanced optical Hall effect measurements can be applied to study electronic properties of two-dimensional materials. Paper III. Terahertz cavity-enhanced optical Hall effect measurements are employed to study anisotropic transport in as-grown monolayer, quasi free-standing monolayer and quasi free-standing bilayer epitaxial graphene on semi-insulating 4H-SiC (0001) substrates. The data analysis revealed a strong anisotropy in the carrier mobilities of the quasi freestanding bilayer graphene. The anisotropy is demonstrated to be induced by carriers scattering at the step edges of the SiC, by showing that the mobility is higher along the step than across them. The scattering mechanism is discussed based on the results of the optical Hall effect, low-energy electron microscopy, low-energy electron diffraction and Raman measurements. Paper IV. Mid-infrared spectroscopic ellipsometry and mid-infrared optical Hall effect measurements are employed to determine the electron effective mass in an In0.33Ga0.67N epitaxial layer. The data analysis reveals slightly anisotropic effective mass and carrier mobility parameters together with the optical phonon frequencies and broadenings. Paper V. Terahertz cavity-enhanced optical Hall measurements are employed to study the free charge carrier properties in a set of AlGaN/GaN high electron mobility structures with modified interfaces. The results show that the interface structure has a significant effect on the free charge carrier mobility and that the sample with a sharp interface between an AlGaN barrier and a GaN buffer layers exhibits a record mobility of 2332±73 cm2/V·s. The determined effective mass parameters showed an increase compared to the GaN value, that is attributed the the penetration of the electron wavefunction into the AlGaN barrier layer.
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Massabeau, Sylvain. "Optical and electronic properties of graphene quantum dots in the Terahertz spectral range." Electronic Thesis or Diss., Sorbonne université, 2020. http://www.theses.fr/2020SORUS445.

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L’objectif de cette thèse est d'explorer les propriétés électroniques et optiques des boîtes quantiques de graphène (BQG) dans le domaine spectral THz. En utilisant le formalisme des liaisons fortes, nous calculons d'abord les niveaux d'énergie de BQG (diamètres de 6 à 50 nm) et analysons leurs caractéristiques. Nous calculons ensuite leur couplage à des photons de faible énergie et déterminons les spectres de probabilité d'absorption des BQG dans la gamme spectrale THz, en fonction de leur taille, de la température et du dopage. Ensuite, nous mesurons les propriétés optiques des BQG aux fréquences THz, en utilisant un système de spectroscopie THz dans le domaine temporel. Des échantillons de graphène épitaxial multicouches (GEM) sont sondés puis nanostructurés en réseaux contenant 107 BQG. Nous montrons que la réponse THz de BQG de quelques dizaines de nm de diamètre est principalement caractérisée par une large absorption autour de 6 THz, à basse et à température ambiante. Ces résultats originaux sont étayés par l'analyse théorique et sont fortement différents de ce qui est observé dans le GEM.Enfin, nous étudions les propriétés de transport électronique d’une BQG unique. La BQG est formée à partir de graphène exfolié encapsulé dans des couches de hBN, et est insérée dans un transistor à électron unique couplé à une antenne THz. On observe le régime de blocage de Coulomb et les états excités de la BQG. Enfin, nous étudions la photoréponse à des photons THz incohérents d’une BQG dans le régime de blocage de Coulomb. Ces résultats ouvrent des perspectives très intéressantes pour le développement de dispositifs THz à base de BQG, comme les lasers THz
The goal of the present thesis is to explore the electronic and optical properties of graphene quantum dots (GQDs) in the THz spectral range. Using tight-binding modelling, we first calculate the energy levels of GQDs of diameters ranging from 6 to 50 nm and analyse the different nature of these energy states. We further calculate their coupling to low energy photons and determine the absorption probability spectra in the THz spectral range. We finally explore how the size, temperature and doping of the GQDs affect their absorption spectra. Secondly, we focus on the experimental investigation of the optical properties of GQDs at THz frequencies, using THz time-domain spectroscopy. Multilayer epitaxial graphene (MEG) samples are probed and then nanostructured in 107 GQDs arrays. We show that the THz response of GQDs with diameters of few tens of nm is mainly characterised by a deep absorption around 6 THz at low and room temperature. These original outcomes are supported by the theoretical analysis and are strongly different from what is observed in MEG. Finally, we study the electronic transport properties of a single GQD in the Coulomb-blockade regime. A single GQD, made of exfoliated graphene encapsulated with hBN layers, is inserted within single electron transistor coupled to a bow-tie THz antenna. Dark transport measurements in the GQD-based transistors show Coulomb blockade regime and excited states of the GQD. Finally, we provide the photoresponse of the GQD in the Coulomb blockade regime under incoherent THz illumination. These results open very exciting perspectives for the development of GQD-based devices for THz photonic applications such as THz lasers
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Northeast, David Bernard. "Hot electron bolometer sensors for millimetre-wave and terahertz wave detection." Thesis, Stellenbosch : University of Stellenbosch, 2011. http://hdl.handle.net/10019.1/6468.

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Thesis (MScEng (Electrical and Electronic Engineering))--Univerity of Stellenbosch, 2011.
ENGLISH ABSTRACT: The design and simulation of hot electron bolometer sensors for the detection of millimeter and terahertz wave radiation is presented. These devices can be used for the formation of images or for spectroscopy in these frequency ranges. Many molecules resonate and have absorption spectra over these ranges, allowing for the identi cation, non-destructively and at a distance, of the constitution of many di erent materials. The penetrating ability of the radiation makes mm-wave and THz wave detectors ideal for security imaging. The design and simulation of these devices predicts performance as mixers and as interferometers. Manufacturing processes used while fabricating these thin lm devices are outlined and experimental results are reported.
AFRIKAANSE OPSOMMING: Hierdie tesis bespreek die ontwerp en simulasie van warm-elektron bolometers vir die waarneming van millimetergolf- en terahertz-straling. Sodanige toestelle kan in bogenoemde frekwensiebereike gebruik word vir beeldvorming of spektroskopie. Aangesien heelwat molekules binne hierdie bande resoneer, kan die samestelling van 'n verskeidenheid materiale oor 'n afstand en op 'n nie-vernietigende wyse gedenti seer word. Die deurdringingsvermo van millimetergolf- en terahertz-straling maak sulke detektors ideaal vir beeldvorming in veiligheidstoepassings. Met die ontwerp en simulasie van hierdie toestelle word gewys wat hul werkverrigting as mengers en interferometers kan wees. Die prosesse wat gebruik is om hierdie dun lmtoestelle mee te vervaardig word ook bespreek en eksperimentele resultate word aangebied.
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Ali, Mubarak. "Design and simulation of planar electronic nanodevices for teraherz and memory applications." Thesis, University of Manchester, 2013. https://www.research.manchester.ac.uk/portal/en/theses/design-and-simulation-of-planar-electronic-nanodevices-for-teraherz-and-memory-applications(e97fd687-72d1-4807-97c4-cadecfb6defb).html.

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The performances derived from current electronic technology are fast approaching a plateau since traditional vertically-layered devices are already in the scaling-limit range. The prospects of using planar devices as a solution have become increasingly promising. Besides, they provide additional advantages of being simple yet operating at very high speeds. In this study, the feasibility of utilising a planar nanoscale unipolar diode or a self-switching device (SSD) for terahertz emission and memory applications is demonstrated using simulations. Detailed characterisation of the devices is performed, paying close attention to their geometrical parameters and the surface-charge density which are crucial in planar electron transport.The emission from the SSD is profiled using electron dynamics in the device evidencing the presence of Gunn domains that lead to current oscillations. Following this, the device performance as determined by lithography-tuneable parameters of channel-length, channel-width and interface-charge density is investigated, in terms of their oscillating frequencies and current amplitudes. The study shows that the geometrical dimensions of the SSD can be tailored for optimum emission frequency and current oscillation magnitude, simply by altering the length and width of the channel, respectively. The highest fundamental frequency attained is 0.2 THz and higher harmonics could achieve up to 1 THz. Moreover, the interface-charge density has a much greater effect on the oscillation frequency than expected, providing some promise to extend emission frequency to a range that has been difficult to achieve using a solid-state device at room temperature.The flexibility of the SSD design has been further exploited to conceptualise a novel planar memory device aimed at overcoming the stagnated processing speeds of multilayer computational chips relying on interconnects. The structure is based on a high surface-to-volume ratio which enables conduction to be controlled by a memory storage region that can be charged and discharged by a control gate. Initially, structure dimensions are tuned and thereafter, the memory retention times resulting from the optimisation of geometrical and electrical parameters are discussed. The energy consumption of the device is much lower than flash memories, potentially useful for emerging low-power applications, particularly when device arrays are designed.
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Zhou, Min. "A terahertz holography imaging system for concealed weapon detection application." Thesis, Queen Mary, University of London, 2018. http://qmro.qmul.ac.uk/xmlui/handle/123456789/31876.

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Many research groups have conducted the investigation into terahertz technology for various applications over the last decade. THz imaging for security screening has been one of the most important applications because of its superior performance of high resolution and not health hazardous. Due to increasing security requirements, it is desirable to devise a high-speed imaging system with high image quality for concealed weapon detection. Therefore, this thesis presents my research into a low-cost and fast THz imaging system for security application. This research has made a number of contributes to THz imaging, such as proposing the beam scanning imaging approach to reduce the scanning time; developing the simulation method of the scanned imaging system; investigating new reconstruction algorithms; studying the optimal spatial sampling criterion; and verifying the beam scanning scheme in experiment. Firstly, the beam scanning scheme is proposed and evaluated in both simulation and experiment, compared to the widely applied raster scanning scheme. A better mechanic rotation structure is developed to reduce the scanning time consumed and realise a more compact system. Then, a rotary Dragonian multi-reflector antenna subsystem, comprising two rotated reflectors is designed to form a similar synthetic aperture being realised in the raster scanned scheme. Thirdly, the simulation of the THz scanning imaging system is achieved by employing Physical Optics algorithm. The transposed convolution and partial inverse convolution reconstruction algorithms are investigated to speed up the image re-construction. Finally, two THz imaging systems based on the raster and beam scanning schemes are assessed and compared in the experiments. The back-propagation, transposed convolution and partial inverse convolution algorithms are applied in these experiments to reconstruct the images. The proposed beam scanning scheme can be further explored together with antenna arrays to provide a compact, fast and low-cost THz imaging system in the future.
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Yeng, Zang. "A fundamental critical assessment of efficiencies in terahertz time-domain spectroscopy systems." Thesis, Queen Mary, University of London, 2017. http://qmro.qmul.ac.uk/xmlui/handle/123456789/24855.

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The electric properties of materials in the THz spectrum are of significant interest for scientific research in the past two decades thanks to the development of THz-TDS systems. However, the measurement capability of the system is still bound by the low efficiency and instability of the system. In this work, a thorough assessment of the THz-TDS system is carried out in order to enhance the measurement capability of the system and provide guidelines for accurate and repeatable measurements. In Chapter 2, the operation fundamentals of THz-TDS systems including the generation and detection are reviewed. The limitations of THz-TDS systems are evaluated in the aspects of dynamic range, signal-to-noise ratio, and spectral resolution. The influence of systematic parameters are addressed and examined. In Chapter 3, a systematic characterisation of the performance of PCAs is performed. The performance of THz PCA is evaluated with respect to the intrinsic and extrinsic excitation parameters, as well as the power collection efficiency within the THz-TDS system. Performance evaluation is carried out in combination of experimental measurements and numerical modellings. Chapter 4 extensively investigates the sensitivity of the THz-TDS system regarding on misalignment of the components. An EM simulation model is built for the evaluation. Point E-field respond in frequency domain and time-domain are examined corresponding directly to the detection signal, and compared with lab measurements. The model is then extended to study the field distribution inside the system. Mode analysis of the field is conducted to discover the pattern of energy coupling related to misalignment. Chapter 5 aims to further enhance the efficiency and radiation characteristics of THz PCAs by adapting the concept of antenna array. The influence of array configuration is assessed by array factor analysis. Coupling conditions of array parameters are established. Performance dependences of THz PCAs on the array geometrics are extensively studied in theory, and tested against experiment. Chapter 6 assess the implementation of plasmonoic structures for the improvement of efficiency and power at the THz generation process. Fundamentals are discussed and structures are designed accordingly. Optimisation principles in consideration of the carrier properties are proposed and practised. Photoconductive antennas with plasmonic structures are fabricated and tested in a THz-TDS system, and the results are compared with simulation.
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Eivarsson, Nils, Malin Bohman, Emil Grosfilley, and Axel Lundberg. "Design and Simulation of Terahertz Antenna for Spintronic Applications." Thesis, Uppsala universitet, Institutionen för materialvetenskap, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-412982.

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Spintronics is a spin-electronic field where the electron spinangular momentum, in conjunction with charge, is used to read andwrite information in magnetic sensors and logic circuits, e.g. hard disk drive (HDD), magnetic random access memory (MRAM) and broadband TeraHertz (THz) emitters. To realize the THz operations of the spin logic circuits THz manipulation of the magnetic state is pivotal. This THz manipulation of the magnetic state in anti-ferromagnetic magnetic materials can be realized by coupling the materials with THz antennas. On the other hand, these antennas enhance the THz amplitude of spin-electronic THz emitters when coupled with its output. Therefore, these THz antennas can not only be coupled with the input of magnetic logics to improve the efficiency of magnetic sate manipulation in logic devices but also with the output of the spintronic THz emitters to enhance the generated THz signal amplitude. In this project, we have examined four types of antennas: h-dipole, spiral, bow-tie, and a sub-THz antenna. All the antennas are placed on top of a MgO substrate material for simplicity. However, a bow-tie antenna is also fabricated on an antiferromagnetic substrate of TmFeO3 to check this antenna’s reliability to manipulate its magnetic state. We have studied the impact of antenna geometries on the generated electric field amplitude. We have optimized each antenna for maximum electric field norm profile, with an increase of 30% for the h-dipole and spiral antennas, and an increase of 100% for the bow-tie antenna. However, in this project we were not able to find any general conclusions about what geometrical parameters can further amplify the generated electric field. None of the antennas generated a large enough peak-to-peak electric field amplitude to manipulate the magnetic state of anti-ferromagnetic materials. However, they did successfully amplify the spintronic THz emitter output and could certainly be useful in that regard.
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Zoth, Christina [Verfasser], and Sergey [Akademischer Betreuer] Ganichev. "Terahertz laser radiation induced opto-electronic effects in HgTe based nanostructures / Christina Zoth. Betreuer: Sergey Ganichev." Regensburg : Universitätsbibliothek Regensburg, 2015. http://d-nb.info/1065445474/34.

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Lidberg, Gustav, Karl Pontén, and Johan Millberg. "Design of Optical Magnetic Systems for Terahertz Lensing." Thesis, Uppsala universitet, FREIA, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-445114.

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When graphene is subjected to magnetic fields, it can be used as an optical device with light in the terahertz region. The functionality of the graphene depends on which magnetic field profile is influencing it. In this project, magnet configurations producing uniform and quadratic magnetic field profiles were studied. A script was written that allowed the user to place dipoles and ring magnets in the proximity of a graphene disc. The script would then determine the necessary dimensions of the permanent magnets used to produce the target magnetic field. The resulting magnetic configurations have been shown to produce a magnetic field within ±1% of the target profile, on the specified domain. However, further studies are required to establish if the acquired configurations proves reasonable in practise, and if so, how well the corresponding optical devices will perform.
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Teramoto, Kensuke. "Generation of intense terahertz surface waves on a metal wire by high-intensity laser driven electrons." Kyoto University, 2020. http://hdl.handle.net/2433/253079.

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Hyart, T. (Timo). "Tunable superlattice amplifiers based on dynamics of miniband electrons in electric and magnetic fields." Doctoral thesis, University of Oulu, 2009. http://urn.fi/urn:isbn:9789514260728.

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Abstract The most important paradigms in quantum mechanics are probably a twolevel system, a harmonic oscillator and an ideal (infinite) periodic potential. The first two provide a starting point for understanding the phenomena in systems where the spectrum of energy levels is discrete, whereas the last one results in continuous energy bands. Here an attempt is made to study the dynamics of the electrons in a narrow miniband of a semiconductor superlattice under electric and magnetic fields. Semiconductor superlattices are artificial periodic structures, where certain properties like the period and the energy band structure, defined in standard crystals by the nature, can be controlled. Electron dynamics in a single superlattice miniband is interesting both from the viewpoint of fundamental and applied physics. From the fundamental perspective superlattices serve as a model system for a wealth of phenomena resulting from the wavenature of charge carriers. On the other hand, superlattices can potentially be utilized in oscillators and amplifiers operating at THz frequencies. They can, in principle, provide a reasonable THz Bloch gain under dc bias and parametric amplification in the presence of ac pump field. Because of numerous scientific and technological applications in different areas of science and technology, including astrophysics and atmospheric science, biological and medical sciences, and detection of concealed weapons and biosecurity, a construction of compact tunable THz amplifiers and generators that can operate at room temperature is an important – but so far unrealized – task. This thesis focuses on the influence of electric and magnetic fields on small-signal absorption and gain in semiconductor superlattices in the presence of dissipation (scattering). We present several new ideas how the effects arising due to the wave nature of the electrons can be utilized in an operation of THz oscillators and amplifiers. In Papers I–V, we discuss the properties of superlattice sub-THz and THz parametric amplifiers, whereas the Papers VI–IX are devoted to the problem of domain instability in the realization of cw THz Bloch oscillator. In Paper IX we also establish a feasibility of new type of superlattice THz amplifier based on nonlinear cyclotron-like oscillations of the miniband electrons. The ideas presented in the Papers I–IX are supplemented here with a detailed discussion of the physical origin of the effects and more rigorous mathematical derivations of the main equations.
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Parkinson, Patrick. "Ultrafast electronic processes at nanoscale organic-inorganic semiconductor interfaces." Thesis, University of Oxford, 2009. http://ora.ox.ac.uk/objects/uuid:e68168c6-bcc0-437d-9133-1bfaf955c80a.

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This thesis is concerned with the influence of nanoscale boundaries and interfaces upon the electronic processes that occur within both organic and inorganic semiconductors. Photoluminescent polymers, highly conducting polymers and nanoscale inorganic semiconductors have been investigated using state-of-the-art ultrafast optical techniques, to provide information on the sub-picosecond photoexcitation dynamics in these systems. The influence of dimensionality on the excitation transfer dynamics in a conjugated polymer blend is studied. Using time-resolved photoluminescence spectroscopy, the transfer transients both for a three-dimensional blend film, and for quasi-two-dimensional monolayers formed through intercalation of the polymer blend between the crystal planes of a SnS2 matrix have been measured. A comparison of the experimental data with a simple, dimensionality-dependent model is presented, based on point dipole electronic coupling between electronic transition moments. Within this approximation, the energy transfer dynamics are found to adopt a three-dimensional character in the solid film, and a two-dimensional nature in the monolayers present in the SnS2 -polymer nanocomposite. The time-resolved conductivity of isolated GaAs nanowires has been investigated by optical-pump terahertz-probe time-domain spectroscopy. The electronic response exhibits a pronounced surface plasmon mode that forms within 300 fs, before decaying within 10 ps as a result of charge trapping at the nanowire surface. The mobility has been extracted using the Drude model for a plasmon and is found to be remarkably high, being roughly one third of that typical for bulk GaAs at room-temperature and indicating the high quality and low bulk defect density in the nanowires studied. Finally, the time-resolved conductivity dynamics of photoexcited polymer-fullerene bulk heterojunction blends for two model polymers, P3HT and MDMO-PPV, blended with PCBM are presented. The observed terahertz-frequency conductivity is characteristic of dispersive charge transport for photoexcitation both at the π−π* absorption peak (560 nm for P3HT), and significantly below it (800 nm). The photoconductivity at 800 nm is unexpectedly high, which is attributed to the presence of a charge transfer complex. In addition, the excitation-fluence dependence of the photoconductivity is studied over more than four orders of magnitude. The time-averaged photoconductivity of the P3HT:PCBM blend is over 20 times larger than that of P3HT, indicating that long-lived positive polarons are responsible for the high photovoltaic efficiency of polymer:fullerene blends. At early times (~ ps) the linear dependence of photoconductivity upon fluence indicates that interfacial charge transfer dominates as an exciton decay pathway, generating charges with mobility of at least ~0.1cm2 V−1 s−1. At later times, a sub-linear relationship shows that carrier-carrier recombination effects influence the conductivity on a longer timescale (> 1 μs).
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Diaz, Álvarez Adrián. "Surface characterization of III-V semiconductor nanowires : morphological, structural and electronic properties." Thesis, Lille 1, 2016. http://www.theses.fr/2016LIL10135/document.

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Avec la miniaturisation des composants optoélectroniques, contrôler la surface de leur constituants actifs devient prépondérant. C’est en particulier vrai pour les nanofils semi-conducteurs dont la géométrie favorise un rapport surface sur volume élevé. L’objectif de cette thèse consiste donc à mener une étude précise de la structure cristallographique et électronique de leur surface et à déterminer à quel point cette surface affecte leurs propriétés physiques globales. Ce travail commence par une description détaillée de la croissance des nanofils III-V en insistant sur l’intérêt de fabriquer des ensembles de nanofils uniformes, condition nécessaire pour assurer une grande reproductibilité des résultats. Il se poursuit par un éclairage sur une technique de choix pour analyser la surface des nanofils, la microscopie à effet tunnel, et une technique d’encapsulation des nanofils pour préserver leur surface de toute contamination. L’intérêt de ces deux techniques est démontré au travers de l’étude de la surface de nanofils GaAs et InAs pour expliquer comment la désorption d’une couche protectrice d’arsenic conduit à des morphologies de surface différentes. L’expertise ainsi acquise est alors mise à profit pour caractériser des nanofils GaAs cœur-coquille, dont la coquille est fabriquée à basse température. Au travers de l’identification des défauts rencontrés dans la coquille, cette dernière se révèle posséder des propriétés similaires à celles de films GaAs fabriqués à basse-température. La durée de vie limitée des porteurs de charge photoexcités est alors exploitée pour étudier les effets induits par les défauts sur les propriétés d’émission THz de nanofils à base de GaAs
With the size reduction of optoelectronic devices, controlling the surface of semiconductor materials is becoming crucial to optimize their performances. This is particularly true for one-dimensional systems such as semiconductor nanowires that are subject to high surface-to-volume ratio. The aim of this thesis is therefore to perform a comprehensive study of the surface properties of III-V semiconductor nanowires and to determine to what extent they affect their overall properties. Starting with a description of the basic principles that govern their growth in order to obtain nanowire ensembles with a good uniformity, we then highlight a surface science tool, scanning tunneling microscopy, and a surface preparation technique, based on the use of a protective arsenic layer, that are key to further understand the structural and electronic properties of the surface of self-catalysed GaAs and InAs semiconductor nanowires. In the fourth part of this work, we apply these techniques to analyse the structural and electronic properties of GaAs core-shell nanowires consisting of a thin shell grown at low temperature. We show the similarity of the shell properties with low-temperature grown GaAs thin film through the identification of their point defects and finally compare the THz properties of these nanowires with GaAs nanowires. The importance of the shell in the dynamics of the free charge carriers is demonstrated from the analysis of the THz waveforms
42

Novelli, Fabio. "In search of selective excitations for studying out-of-equilibrium properties in strongly correlated electron systems and high temperature superconductors." Doctoral thesis, Università degli studi di Trieste, 2013. http://hdl.handle.net/10077/8588.

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2011/2012
Negli ossidi dei metalli di transizione le correlazioni elettroniche, magnetiche e reticolari sono all’origine di peculiari proprietà fisiche come la resistenza magnetica colossale e la superconduttività ad alta temperatura critica. La spettroscopia risolta in tempo è uno strumento unico per separare il contributo dei singoli gradi di libertà. Inoltre, tale tecnica può essere usata per indurre transizioni di fase non-termiche nella materia condensata. In particolare, scegliendo appositi impulsi pompa in combinazione con impulsi sonda in grado di misurarne gli effetti, è possibile “guidare” la materia nello stato fisico desiderato tramite un’eccitazione selettiva. I primi capitoli della tesi introducono lo stato dell’arte, le tecniche sperimentali e i modelli usati per studiare le proprietà ottiche dei cristalli fuori equilibrio. I capitoli successivi sono dedicati a singoli materiali: abbiamo eseguito misure di riflettività risolte in tempo con pompa nel visibile e sonda ad ampio spettro (1-3 eV) su alcuni isolanti di Mott (YVO3 e La2CuO4) e superconduttori (YBa2Cu3O7-d), e con pompa THz (1 THz~4 meV) su GaAs. YVO3 è un prototipico isolante di Mott e mostra una varietà di fasi caratterizzate da peculiari ordini orbitali e magnetici in funzione della temperatura. In questo sistema le eccitazioni ottiche sono direttamente collegate al grado di libertà orbitale, magnetico o elettronico, ma la loro interpretazione è controversa. Eseguendo misure di riflettività risolte in tempo e frequenza abbiamo dimostrato che le due transizioni ottiche ad energie minori (1.8 eV e 2.4 eV) appartengono alla stessa banda: in particolare, la transizione a 1.8 eV è interpretabile come un eccitone di Hubbard, ovvero uno stato quasi legato stabilizzato da una diminuzione di energia cinetica. Inoltre, abbiamo suggerito l’interpretazione della fase metastabile (che sopravvive almeno fino a 1 ns dopo la foto-eccitazione) come una fase disordinata di spin, e che il materiale potrebbe pertanto essere utilizzato come interruttore magnetico ultra-veloce (F.Novelli et al., Phys. Rev. B 86, 165135, 2012). Per studiare la dipendenza della risposta ottica transiente dei cuprati dalla lunghezza d’onda della pompa ci siamo concentrati sul La2CuO4. I nostri risultati dimostrano che l’effetto degli impulsi di pompa non può sempre essere trattato come semplice perturbazione della temperatura del sotto-sistema elettronico, poiché dinamiche molto diverse vengono rivelate quando l’energia degli impulsi di pompa è maggiore o minore dell’energia del gap di trasferimento di carica, che si trova a circa 2 eV. In particolare foto-eccitare sopra gap è analogo ad un aumento di temperatura, mentre foto-eccitare sotto gap “indurisce” il gap di trasferimento di carica. Ciò suggerisce l’esistenza di eccitazioni a bassa energia che inducono una rinormalizzaizione non termica del gap (in preparazione). Per studiare l’interazione fra grado di libertà vibrazionale e grado di libertà elettronico nei sistemi a forte correlazione elettronica abbiamo utilizzato impulsi di pompa con lunghezza d’onda centrale pari a 800 nm e impulsi di sonda nell’intervallo 400-1200 nm su film sottili di YBa2Cu3O7-d drogato in modo ottimale. Le oscillazioni della riflettività transiente palesano due fononi con frequenze di pochi THz che coinvolgono rispettivamente vibrazioni, pressoché pure, di Ba e Cu. Mentre il modo del rame è indipendente, il modo del bario risulta chiaramente accoppiato alla fase superconduttiva. L’ampiezza delle oscillazioni del modo del bario aumenta sotto la temperatura critica e la sua distribuzione spettrale è modificata quando il condensato viene sciolto dagli impulsi di pompa. I nostri risultati offrono una nuova prospettiva nell’interpretazione della dinamica delle transizioni inter-banda dei cuprati che subiscono forti modificazioni sotto TC (in preparazione). Abbiamo studiato un regime misto nell’interazione fra luce e materia tramite misure risolte in fase dell’effetto Franz-Keldysh nell’arseniuro di gallio. L’effetto Franz-Keldysh consiste nella perturbazione delle proprietà ottiche di un semiconduttore in una regione energetica intorno al gap a seguito dell’applicazione di un campo elettrico. Le misure sono state effettuate con impulsi di pompa ultra corti a singolo ciclo ottico nella regione spettrale del terahertz, e impulsi di sonda ad ampio spettro nella regione spettrale del visibile. Regolando l’intensità degli impulsi di pompa abbiamo studiato sia l’effetto Franz-Keldysh dinamico che un nuovo regime di saturazione in cui la “memoria” è importante, ovvero in cui la risposta ottica intorno al gap dipende da una funzione integrale del campo elettrico applicato. I nostri risultati potrebbero essere utili nell’ambito della strumentazione ottica ultra-veloce (F. Novelli et al., Scientific Reports 3, 1227, 2013). In conclusione, abbiamo dimostrato che le eccitazioni selettive sono certamente possibili in diversi ossidi dei metalli di transizione tramite tecniche spettroscopiche ultra-veloci risolte in tempo e frequenza: importanti informazioni fisiche possono essere ottenute regolando il contenuto energetico degli impulsi laser utilizzati.
XXV Ciclo
1984
43

Jian, Zhongping. "Terahertz photonic crystals." Thesis, 2006. http://hdl.handle.net/1911/18921.

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This thesis describes the study of two-dimensional photonic crystals slabs with terahertz time domain spectroscopy. In our study we first demonstrate the realization of planar photonic components to manipulate terahertz waves, and then characterize photonic crystals using terahertz pulses. Photonic crystal slabs at the scale of micrometers are first designed and fabricated free of defects. Terahertz time domain spectrometer generates and detects the electric fields of single-cycle terahertz pulses. By putting photonic crystals into waveguide geometry, we successfully demonstrate planar photonic components such as transmission filters, reflection frequency-selective filters, defects modes as well as superprisms. In the characterization study of out-of-plane properties of photonic crystal slabs, we observe very strong dispersion at low frequencies, guided resonance modes at middle frequencies, and a group velocity anomaly at high frequencies. We employ Finite Element Method and Finite-Difference Time-Domain method to simulate the photonic crystals, and excellent agreement is achieved between simulation results and experimental results.
44

Johnson, Jon Lars. "Interferometry in terahertz imaging." Thesis, 2001. http://hdl.handle.net/1911/17435.

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Terahertz Time-Domain Spectroscopy (THz-TDS) techniques have been shown over the last decade to be useful in many diverse applications. This thesis describes the implementation of interferometry in imaging with few-cycle terahertz pulses for the purpose of enhancing depth resolution. By configuring terahertz imaging optics in a Michelson interferometric arrangement, a phase shift of approximately Pi radians can be introduced between the interferometer's two arms via the Gouy effect. The resulting destructive interference provides a nearly background-free measurement and a dramatic enhancement in imaging sub-coherence length features. It is possible to image features thinner than 4% of the coherence length of the radiation. This technique could have applications in THz imaging and other THz-TDS systems, as well as in other low-coherence optical tomographic measurements.
45

"Terahertz imaging with compressive sensing." Thesis, 2010. http://hdl.handle.net/1911/61998.

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Most existing terahertz imaging systems are generally limited by slow image acquisition due to mechanical raster scanning. Other systems using focal plane detector arrays can acquire images in real time, but are either too costly or limited by low sensitivity in the terahertz frequency range. To design faster and more cost-effective terahertz imaging systems, the first part of this thesis proposes two new terahertz imaging schemes based on compressive sensing (CS). Both schemes can acquire amplitude and phase-contrast images efficiently with a single-pixel detector, thanks to the powerful CS algorithms which enable the reconstruction of N-by- N pixel images with much fewer than N2 measurements. The first CS Fourier imaging approach successfully reconstructs a 64x64 image of an object with pixel size 1.4 mm using a randomly chosen subset of the 4096 pixels which defines the image in the Fourier plane. Only about 12% of the pixels are required for reassembling the image of a selected object, equivalent to a 2/3 reduction in acquisition time. The second approach is single-pixel CS imaging, which uses a series of random masks for acquisition. Besides speeding up acquisition with a reduced number of measurements, the single-pixel system can further cut down acquisition time by electrical or optical spatial modulation of random patterns. In order to switch between random patterns at high speed in the single-pixel imaging system, the second part of this thesis implements a multi-pixel electrical spatial modulator for terahertz beams using active terahertz metamaterials. The first generation of this device consists of a 4x4 pixel array, where each pixel is an array of sub-wavelength-sized split-ring resonator elements fabricated on a semiconductor substrate, and is independently controlled by applying an external voltage. The spatial modulator has a uniform modulation depth of around 40 percent across all pixels, and negligible crosstalk, at the resonant frequency. The second-generation spatial terahertz modulator, also based on metamaterials with a higher resolution (32x32), is under development. A FPGA-based circuit is designed to control the large number of modulator pixels. Once fully implemented, this second-generation device will enable fast terahertz imaging with both pulsed and continuous-wave terahertz sources.
46

Pearce, Jeremiah Glen. "Multiple scattering of broadband terahertz pulses." Thesis, 2005. http://hdl.handle.net/1911/18797.

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Propagation of single-cycle terahertz (THz) pulses through a random medium leads to dramatic amplitude and phase variations of the electric field because of multiple scattering. We present the first set of experiments that investigate the propagation of THz pulses through scattering media. The scattering of short pulses is a relevant subject to many communities in science and engineering, because the properties of multiply scattered or diffuse waves provide insights into the characteristics of the random medium. For example, the depolarization of diffuse waves has been used to form images of objects embedded in inhomogeneous media. Most of the previous scattering experiments have used narrowband optical radiation where measurements are limited to time averaged intensities or autocorrelation quantities, which contain no phase information of the pulses. In the experiments presented here, a terahertz time-domain spectrometer (THz-TDS) is used. A THz-TDS propagates single-cycle sub-picosecond pulses with bandwidths of over 1 THz into free space. The THz-TDS is a unique tool to study such phenomena, because it provides access to both the intensity and phase of those pulses through direct measurement of the temporal electric field. Because of the broad bandwidth and linear phase of the pulses, it is possible to simultaneously study Rayleigh scattering and the short wavelength limit in a single measurement. We study the diffusion of broadband single-cycle THz pulses by propagating the pulses through a highly scattering medium. Using the THz-TDS, time-domain measurements provide information on the statistics of both the amplitude and phase of the diffusive waves. We develop a theoretical description, suitable for broadband radiation, which accurately describes the experimental results. We measure the time evolution of the degree of polarization, and directly correlate it with the single-scattering regime in the time domain. Measurements of the evolution of the temporal phase of the radiation demonstrate that the average spectral content depends on the state of polarization. In the case of broadband radiation, this effect distinguishes photons that have been scattered only a few times from those that are propagating diffusively.
47

Srivastava, Rahul. "Optically detected terahertz resonance spectroscopy of semiconductor nanostructures." Thesis, 2005. http://hdl.handle.net/1911/17831.

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In this dissertation work we have developed an ultracompact optically-detected terahertz resonance (ODTR) spectroscopy system, using quantum cascade lasers (QCLs). This system can be used for investigating various terahertz (THz) resonances in semiconductors. We use a THz QCL, of an appropriate frequency, operating in the close vicinity of the sample. Due to the small size of the QCLs, we can mount them on the sample holder of the magnet, which allows focusing of the THz beam onto the sample with minimal loss. This precludes the need of any external source of radiation. We use a single fiber to send the pump laser beam to the sample and collect the PL signal. The use of the fiber makes our system versatile enough to be used in a variety of situations, especially inside our magnet. We have used this setup to obtain some preliminary ODTR data on an InGaAs/AlGaAs multiple-quantum well sample.
48

Jian, Zhongping. "Space-time cross correlations of diffuse broadband terahertz waves." Thesis, 2003. http://hdl.handle.net/1911/17597.

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We describe observations of the amplitude and phase of an electric field diffusing through a three-dimensional random medium by using Terahertz Time-Domain Spectroscopy. These measurements are spatially resolved with a resolution smaller than the speckle spot size, and temporally resolved with a resolution better than one optical cycle. We propose a new correlation function---time-windowed correlation function---to explore the correlation among the measured waveforms. We have obtained information about individual scattering events experienced by the diffusing fields and how correlation fields evolve temporally. This represents a new method to characterize a multiply scattered wave and opens up new possibilities for imaging in biological media.
49

Pearce, Jeremiah Glen. "The propagation of single-cycle terahertz pulses in random media." Thesis, 2002. http://hdl.handle.net/1911/17538.

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We describe what are to our knowledge the first measurements of the propagation of coherent, single-cycle pulses of terahertz radiation in a scattering medium. We measure the propagation constants for pulses in a dense collection of spherical scatterers, and compare to the predictions of the quasi-crystalline approximation. Even though the fractional volume in our measurements exceeds the limit of validity of this model, we find that it still predicts certain features of the propagation with reasonable accuracy. By measuring the transmission as a function of the length L of the medium, we extract the scattering mean free path lambdasc (o) over a broad bandwidth. We observe variations in lambda sc ranging over nearly two orders of magnitude, and covering the entire thin sample regime from L/lambda sc << 1 to L/lambdasc ∼10.
50

Dorney, Timothy Dominic. "Material parameter estimation and imaging with terahertz time-domain spectroscopy." Thesis, 2002. http://hdl.handle.net/1911/18074.

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Terahertz time-domain spectroscopy (THz-TDS) offers a range of unique imaging modalities due to the broad bandwidth, sub-picosecond duration, and phase-sensitive detection of the THz pulses. Previous research in the THz field primarily focused on improving the optoelectronics and on qualitative investigation of suitable applications. In this thesis, we use a quantitative approach to explore and extend the boundaries of the system. First, the possibility exists to combine spectroscopic characterization and/or identification with imaging because the THz radiation is broadband in nature. We describe a robust algorithm for extracting the optical constants and thickness, simultaneously and independently, from a sample. The technique extracts material parameters for both high and low index materials. Second, a fiber-coupled THz system provides an unparalleled opportunity to simulate seismic data collection. We demonstrate the homology between ultra-wideband seismic and THz imaging using multistatic reflective data acquisition. These results broaden the capabilities of THz imaging by borrowing from a mature imaging community. We investigate the resolution limits and show results from both simple and complex layered targets.

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