Journal articles on the topic 'Technologie III-V'
Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles
Consult the top 50 journal articles for your research on the topic 'Technologie III-V.'
Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.
You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.
Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.
Perret, C., C. Lallement, and A. Belleville. "Le Moulinet d'hydrométrie à axe horizontal à travers l'expérience française. Quel avenir pour cette technique ?" La Houille Blanche, no. 5-6 (October 2018): 75–86. http://dx.doi.org/10.1051/lhb/2018054.
ČULÍK, J., V. KELLNER, B. ŠPINAR, J. PROKEŠ, and G. BASAŘOVÁ. "Volatile N-nitrosamines in malt. III. Effect of barley germination on the formation of natural precursors of N-nitrosodimethylamine in green malt and final malt." Kvasny Prumysl 36, no. 6 (June 1, 1990): 162–65. http://dx.doi.org/10.18832/kp1990020.
Kawanami, H. "Heteroepitaxial technologies of III–V on Si." Solar Energy Materials and Solar Cells 66, no. 1-4 (February 2001): 479–86. http://dx.doi.org/10.1016/s0927-0248(00)00209-9.
Dutta, Nlloy K. "III-V Device Technologies for Lightwave Applications." AT&T Technical Journal 68, no. 1 (January 2, 1989): 5–18. http://dx.doi.org/10.1002/j.1538-7305.1989.tb00642.x.
Shah, Nitin J., and Shin-Shem Pei. "III-V Device Technologies for Electronic Applications." AT&T Technical Journal 68, no. 1 (January 2, 1989): 19–28. http://dx.doi.org/10.1002/j.1538-7305.1989.tb00643.x.
Takagi, S., R. Zhang, S. H. Kim, M. Yokoyama, and M. Takenaka. "(Invited) Performance Enhancement Technologies in III-V/Ge MOSFETs." ECS Transactions 58, no. 9 (August 31, 2013): 137–48. http://dx.doi.org/10.1149/05809.0137ecst.
Heinecke, Harald, and Eberhard Veuhoff. "Evaluation of III–V growth technologies for optoelectronic applications." Materials Science and Engineering: B 21, no. 2-3 (November 1993): 120–29. http://dx.doi.org/10.1016/0921-5107(93)90334-j.
Raj, Vidur, Tuomas Haggren, Wei Wen Wong, Hark Hoe Tan, and Chennupati Jagadish. "Topical review: pathways toward cost-effective single-junction III–V solar cells." Journal of Physics D: Applied Physics 55, no. 14 (December 3, 2021): 143002. http://dx.doi.org/10.1088/1361-6463/ac3aa9.
Caimi, D., H. Schmid, T. Morf, P. Mueller, M. Sousa, K. E. Moselund, and C. B. Zota. "III-V-on-Si transistor technologies: Performance boosters and integration." Solid-State Electronics 185 (November 2021): 108077. http://dx.doi.org/10.1016/j.sse.2021.108077.
Takagi, S., M. Kim, M. Noguchi, K. Nishi, and M. Takenaka. "(Invited) Tunneling FET Technologies Using III-V and Ge Materials." ECS Transactions 69, no. 10 (October 2, 2015): 99–108. http://dx.doi.org/10.1149/06910.0099ecst.
Takagi, S., and M. Takenaka. "(Invited) III-V/Ge MOS Transistor Technologies for Future ULSI." ECS Transactions 54, no. 1 (June 28, 2013): 39–54. http://dx.doi.org/10.1149/05401.0039ecst.
Tomioka, Katsuhiro, Hironori Gamo, and Junichi Motohisa. "(Invited) Vertical Tunnel FET Technologies Using III-V/Si Heterojunction." ECS Transactions 92, no. 4 (July 3, 2019): 71–78. http://dx.doi.org/10.1149/09204.0071ecst.
Nedelcu, Alexandru, Cyrille Bonvalot, Rachid Taalat, Jérôme Fantini, Thierry Colin, Philippe Muller, Odile Huet, et al. "III-V detector technologies at Sofradir: Dealing with image quality." Infrared Physics & Technology 94 (November 2018): 273–79. http://dx.doi.org/10.1016/j.infrared.2018.09.027.
Tongesayi, Tsanangurayi, and Ronald B. Smart. "Arsenic Speciation: Reduction of Arsenic(V) to Arsenic(III) by Fulvic Acid." Environmental Chemistry 3, no. 2 (2006): 137. http://dx.doi.org/10.1071/en05095.
CHANG, M. F., and P. M. ASBECK. "III-V HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED APPLICATIONS." International Journal of High Speed Electronics and Systems 01, no. 03n04 (September 1990): 245–301. http://dx.doi.org/10.1142/s0129156490000137.
Takagi, Shinichi, Rui Zhang, Junkyo Suh, Sang-Hyeon Kim, Masafumi Yokoyama, Koichi Nishi, and Mitsuru Takenaka. "III–V/Ge channel MOS device technologies in nano CMOS era." Japanese Journal of Applied Physics 54, no. 6S1 (May 7, 2015): 06FA01. http://dx.doi.org/10.7567/jjap.54.06fa01.
KAMIMURA, Ryuichiro, and Kanji FURUTA. "Dry Etching Technologies of Optical Device and III-V Compound Semiconductors." IEICE Transactions on Electronics E100.C, no. 2 (2017): 150–55. http://dx.doi.org/10.1587/transele.e100.c.150.
Takagi, S., C. Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke, J. H. Han, and M. Takenaka. "(Invited) MOS Interface Control Technologies for Advanced III-V/ Ge Devices." ECS Transactions 69, no. 5 (October 2, 2015): 37–51. http://dx.doi.org/10.1149/06905.0037ecst.
Takagi, Shinichi, Rui Zhang, Takuya Hoshii, Noriyuki Taoka, and Mitsuru Takenaka. "(Invited) MOS Interface Control Technologies for III-V/Ge Channel MOSFETs." ECS Transactions 41, no. 3 (December 16, 2019): 3–20. http://dx.doi.org/10.1149/1.3633015.
Takagi, Shinichi, Masafumi Yokoyama, Sang-Hyeon Kim, Rui Zhang, and Mitsuru Takenaka. "(Invited) Device and Integration Technologies of III-V/Ge Channel CMOS." ECS Transactions 41, no. 7 (December 16, 2019): 203–18. http://dx.doi.org/10.1149/1.3633300.
Takagi, Shinichi, Dae-Hwan Ahn, Munetaka Noguchi, Sanghee Yoon, Takahiro Gotow, Koichi Nishi, Minsoo Kim, et al. "(Invited) Low Power Tunneling FET Technologies Using Ge/III-V Materials." ECS Transactions 80, no. 4 (August 1, 2017): 115–24. http://dx.doi.org/10.1149/08004.0115ecst.
Takagi, S., M. Noguchi, M. Kim, S. H. Kim, C. Y. Chang, M. Yokoyama, K. Nishi, R. Zhang, M. Ke, and M. Takenaka. "III-V/Ge MOS device technologies for low power integrated systems." Solid-State Electronics 125 (November 2016): 82–102. http://dx.doi.org/10.1016/j.sse.2016.07.002.
Heyns, Marc M., Marc M. Meuris, and Matty R. Caymax. "Ge and III/V as Enabling Materials for Future CMOS Technologies." ECS Transactions 3, no. 7 (December 21, 2019): 511–18. http://dx.doi.org/10.1149/1.2355848.
Dautremont-Smith, William C., R. J. McCoy, Randolph H. Burton, and Albert G. Baca. "Fabrication Technologies for III-V Compound Semiconductor Photonic and Electronic Devices." AT&T Technical Journal 68, no. 1 (January 2, 1989): 64–82. http://dx.doi.org/10.1002/j.1538-7305.1989.tb00647.x.
Zeng, Cong, Donghui Fu, Yunjiang Jin, and Yu Han. "Recent Progress in III–V Photodetectors Grown on Silicon." Photonics 10, no. 5 (May 14, 2023): 573. http://dx.doi.org/10.3390/photonics10050573.
Kühn, G. "Landolt-Börnstein. Zahlenwerte und Funktionen aus Naturwissenschaften und Technik, Neue Serie, Gruppe III: Kristall- und Festkörperphysik Bd. 17: Halbleiter, Teilband d: Technologie von III—V, II—VI und nicht-tetraedrisch gebundenen Verbindungen. Herausgegeben von M. Schulz und H. Weiss. Springer-Verlag Berlin, Heidelberg, New York, Tokyo, 429 Seiten, 446 Abbildungen, zahlreiche Tabellen und Literaturzitate. Preis: DM 750.00. ISBN 3–540–11779–2." Crystal Research and Technology 20, no. 7 (July 1985): 898. http://dx.doi.org/10.1002/crat.2170200705.
Simon, John, Kevin Schulte, Kelsey Horowitz, Timothy Remo, David Young, and Aaron Ptak. "III-V-Based Optoelectronics with Low-Cost Dynamic Hydride Vapor Phase Epitaxy." Crystals 9, no. 1 (December 20, 2018): 3. http://dx.doi.org/10.3390/cryst9010003.
Lan, Luis E., Fernando D. Reina, Graciela E. De Seta, Jorge M. Meichtry, and Marta I. Litter. "Comparison between Different Technologies (Zerovalent Iron, Coagulation-Flocculation, Adsorption) for Arsenic Treatment at High Concentrations." Water 15, no. 8 (April 11, 2023): 1481. http://dx.doi.org/10.3390/w15081481.
Akram, Sabahat, Hajra Faraqat, and Saadia Bano Hashmi. "Examining the Impact of Information and Communication Technologies on Female Economic Participation in Pakistan." Global Economics Review V, no. III (September 30, 2020): 118–30. http://dx.doi.org/10.31703/ger.2020(v-iii).11.
Takagi, S., M. Yokoyama, S. H. Kim, R. Zhang, R. Suzuki, N. Taoka, and M. Takenaka. "(Invited) III-V/Ge CMOS Device Technologies for High Performance Logic Applications." ECS Transactions 53, no. 3 (May 2, 2013): 85–96. http://dx.doi.org/10.1149/05303.0085ecst.
Zhao, Lixia. "Studies of III-V Semiconductor Materials and Devices Using Different Analytical Technologies." Journal of Surface Analysis 26, no. 2 (2019): 136–37. http://dx.doi.org/10.1384/jsa.26.136.
Claeys, C., P.-C. Hsu, L. He, Y. Mols, R. Langer, N. Waldron, G. Eneman, N. Collaert, M. Heyns, and E. Simoen. "Are Extended Defects a Show Stopper for Future III-V CMOS Technologies." Journal of Physics: Conference Series 1190 (May 2019): 012001. http://dx.doi.org/10.1088/1742-6596/1190/1/012001.
Takagi, S., S. H. Kim, M. Yokoyama, R. Zhang, N. Taoka, Y. Urabe, T. Yasuda, et al. "High mobility CMOS technologies using III–V/Ge channels on Si platform." Solid-State Electronics 88 (October 2013): 2–8. http://dx.doi.org/10.1016/j.sse.2013.04.020.
Kerio, Ghulam Ali, Naimatullah Keeryo, and Anjum Bano Kazimi. "A Qualitative Study on Classroom Management of Undergraduate Students: A Case of Information Technologies Class." Global Regional Review V, no. III (September 30, 2020): 91–100. http://dx.doi.org/10.31703/grr.2020(v-iii).10.
Wattoo, Rashid Minas, Muhammad Latif, and Namra Munir. "Information Communication Technologies Hauling Out University Students' Effective Learning during COVID-19: A Qualitative Study." Global Social Sciences Review V, no. III (September 30, 2020): 351–57. http://dx.doi.org/10.31703/gssr.2020(v-iii).37.
Seo, Jung-Hun. "Editorial for the Special Issue on Wide Bandgap Semiconductor Based Micro/Nano Devices." Micromachines 10, no. 3 (March 26, 2019): 213. http://dx.doi.org/10.3390/mi10030213.
Brennan, B., S. McDonnell, D. Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, and R. M. Wallace. "In Situ Studies of III-V Surfaces and High-K Atomic Layer Deposition." Solid State Phenomena 195 (December 2012): 90–94. http://dx.doi.org/10.4028/www.scientific.net/ssp.195.90.
Du, Yong, Buqing Xu, Guilei Wang, Yuanhao Miao, Ben Li, Zhenzhen Kong, Yan Dong, Wenwu Wang, and Henry H. Radamson. "Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon." Nanomaterials 12, no. 5 (February 22, 2022): 741. http://dx.doi.org/10.3390/nano12050741.
Takenaka, Mitsuru, and Shinichi Takagi. "III-V/Ge Device Engineering for CMOS Photonics." Materials Science Forum 783-786 (May 2014): 2028–33. http://dx.doi.org/10.4028/www.scientific.net/msf.783-786.2028.
GAO, GUANG-BO, S. NOOR MOHAMMAND, GREGORY A. MARTIN, and HADIS MORKOÇ. "FUNDAMENTALS, PERFORMANCE AND RELIABILITY OF III-V COMPOUND SEMICONDUCTOR HETEROJUNCTION BIPOLAR TRANSISTORS." International Journal of High Speed Electronics and Systems 06, no. 01 (March 1995): 1–89. http://dx.doi.org/10.1142/s012915649500002x.
Muhammad, Rehan, Shahid Nawaz, and Muhammad Hammad Hussain Shah. "Teachers' Perceptions about the Use of Information Communication Technologies (ICTs) in Second Language Learning at Higher Secondary Level." Global Mass Communication Review V, no. III (September 30, 2020): 164–74. http://dx.doi.org/10.31703/gmcr.2020(v-iii).14.
Yoon, Jongseung. "III-V Nanomembranes for High Performance, Cost-Competitive Photovoltaics." MRS Advances 2, no. 30 (2017): 1591–96. http://dx.doi.org/10.1557/adv.2017.139.
Berd, David, Takami Sato, Henry C. Maguire, John Kairys, and Michael J. Mastrangelo. "Immunopharmacologic Analysis of an Autologous, Hapten-Modified Human Melanoma Vaccine." Journal of Clinical Oncology 22, no. 3 (February 1, 2004): 403–15. http://dx.doi.org/10.1200/jco.2004.06.043.
Kong, Shu Qiong, Yan Xin Wang, Cheng Wang, Li Ling Jin, Ming Liang Liu, and Mei Yu. "Nanoscale Iron-Manganese Binary Oxide for As(III) Removal in Synthesized Groundwater." Applied Mechanics and Materials 319 (May 2013): 209–12. http://dx.doi.org/10.4028/www.scientific.net/amm.319.209.
Feng, Qi, Wenqi Wei, Bin Zhang, Hailing Wang, Jianhuan Wang, Hui Cong, Ting Wang, and Jianjun Zhang. "O-Band and C/L-Band III-V Quantum Dot Lasers Monolithically Grown on Ge and Si Substrate." Applied Sciences 9, no. 3 (January 23, 2019): 385. http://dx.doi.org/10.3390/app9030385.
Ji, Chunnuan, Rongjun Qu, Qinghua Tang, Xiguang Liu, Hou Chen, Changmei Sun, and Peng Yin. "Removal of trace As(V) from aqueous solution by Fe(III)-loaded porous amidoximated polyacrylonitrile." Water Supply 16, no. 6 (May 18, 2016): 1603–13. http://dx.doi.org/10.2166/ws.2016.085.
Xi, Jianhong, and Mengchang He. "Removal of Sb(III) and Sb(V) from aqueous media by goethite." Water Quality Research Journal 48, no. 3 (August 1, 2013): 223–31. http://dx.doi.org/10.2166/wqrjc.2013.030.
Nayak, Bishwajit, Md Amir Hossain, Mrinal Kumar Sengupta, Saad Ahamed, Bhaskar Das, Arup Pal, and Amitava Mukherjee. "Adsorption Studies with Arsenic onto Ferric Hydroxide Gel in a Non-oxidizing Environment: the Effect of Co-occurring Solutes and Speciation." Water Quality Research Journal 41, no. 3 (August 1, 2006): 333–40. http://dx.doi.org/10.2166/wqrj.2006.037.
Liu, Chun Tong, Li Bing, Wang Tao, and Hong Cai Li. "Key Technologies Research of New Generation Concentrating Photovoltaic." Advanced Materials Research 724-725 (August 2013): 171–75. http://dx.doi.org/10.4028/www.scientific.net/amr.724-725.171.
Bakkers, Erik P. A. M., Magnus T. Borgström, and Marcel A. Verheijen. "Epitaxial Growth of III-V Nanowires on Group IV Substrates." MRS Bulletin 32, no. 2 (February 2007): 117–22. http://dx.doi.org/10.1557/mrs2007.43.