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Journal articles on the topic 'Switching Transition'

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Author: Grafiati

Published: 6 September 2023

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1

Malinenko, V. P., L. A. Aleshina, A. L. Pergament, and G. V. Germak. "Switching Effects and Metal−Insulator Transition in Manganese Oxide." Journal on Selected Topics in Nano Electronics and Computing 1, no. 1 (December 2013): 44–50. http://dx.doi.org/10.15393/j8.art.2013.3005.

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2

Yan, Zhongna, Dou Zhang, Xuefan Zhou, He Qi, Hang Luo, Kechao Zhou, Isaac Abrahams, and Haixue Yan. "Silver niobate based lead-free ceramics with high energy storage density." Journal of Materials Chemistry A 7, no. 17 (2019): 10702–11. http://dx.doi.org/10.1039/c9ta00995g.

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Electrical field dependence of permittivity in (1 − x)AN-xBZN ceramics. Arrow directions down, up and down then up are related to domain switching, field induced transition and domain switching plus field induced transitions, respectively.

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3

Higgins, Matthew L., and Frank Ofori-Acheampong. "A Markov Regime-Switching Model with Time-Varying Transition Probabilities for Identifying Asset Price Bubbles." International Journal of Economics and Finance 10, no. 4 (March 3, 2018): 1. http://dx.doi.org/10.5539/ijef.v10n4p1.

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In this paper, a Markov regime-switching model with time-varying transition probabilities is developed to identify asset price bubbles in the S&P 500 index. The model nests two different methodologies; a state-dependent regime-switching model and a Markov regime-switching model. Three bubble regimes are identified; dormant, explosive, and collapsing. Time-varying transition probabilities are specified for each of the nine possible transitions in the Markov regime-switching model. Estimation of the model is done using conditional maximum likelihood with the Hamilton filter. Results show that transition probabilities depend significantly on trading volume and relative size of the bubble. Overall, the model works well in detecting multiple bubbles in the S&P 500 between January 1888 and May 2010. Explosive bubbles tend to immediately precede recession periods, while collapsing bubbles tend to coincide with recession periods.

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4

Han, Xiao, Ying Hui Gao, Yao Hong Sun, and Ping Yan. "An Electronic Model of Capacitor Charging Power Supply Considering Transient Switching Interference." Advanced Materials Research 706-708 (June 2013): 1738–41. http://dx.doi.org/10.4028/www.scientific.net/amr.706-708.1738.

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In this paper, a mathematical analysis of the EMI(Electromagnetic Interference) for a 20kHz/10kV capacitor charging power supply in frequency-domain is presented, and a related circuit model considering the transient switching interference is proposed. Due to the high working frequency and the device-switching transitions, the conducted EMI caused by the charging circuit which includes the harmonics of grid frequency, working frequency and device-switching transition frequencies. Thus under certain working situations or loads parallel power supply, the interference may cause charging failure. To solve this problem, a high frequency transformer modeled with stray capacitances and an approximation of the device-switching transition is applied in the Pspice-based simulation model, and a mathematical analysis in frequency-domain is presented.

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5

Shrestha, Ramesh, Yuxuan Luan, Sunmi Shin, Teng Zhang, Xiao Luo, James S. Lundh, Wei Gong, et al. "High-contrast and reversible polymer thermal regulator by structural phase transition." Science Advances 5, no. 12 (December 2019): eaax3777. http://dx.doi.org/10.1126/sciadv.aax3777.

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In comparison with the advancement of switchable, nonlinear, and active components in electronics, solid-state thermal components for actively controlling heat flow have been extremely rare. We demonstrate a high-contrast and reversible polymer thermal regulator based on the structural phase transition in crystalline polyethylene nanofibers. This structural phase transition represents a dramatic change in morphology from a highly ordered all-trans conformation to a combined trans and gauche conformation with rotational disorder, leading to an abrupt change in phonon transport along the molecular chains. For five nanofiber samples measured here, we observe an average thermal switching ratio of ~8× and maximum switching ratio of ~10×, which occurs in a narrow temperature range of 10 K across the structural phase transition. To the best of our knowledge, the ~10× switching ratio exceeds any reported experimental values for solid-solid and solid-liquid phase transitions of materials. There is no thermal hysteresis observed upon heating/cooling cycles.

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6

Castenschiold, R. "Closed-transition switching of essential loads." IEEE Transactions on Industry Applications 25, no. 3 (1989): 403–7. http://dx.doi.org/10.1109/28.31209.

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7

Sawa, Akihito. "Resistive switching in transition metal oxides." Materials Today 11, no. 6 (June 2008): 28–36. http://dx.doi.org/10.1016/s1369-7021(08)70119-6.

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8

TIAN, Shijun, Xifan WANG, Xiuli WANG, Chengcheng SHAO, and Rong YE. "Network transition security for transmission switching." Journal of Modern Power Systems and Clean Energy 7, no. 5 (September 2019): 1105–14. http://dx.doi.org/10.1007/s40565-019-0562-1.

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9

Ramesh, K., Pumlianmunga, R. Venkatesh, N. Naresh, and E. S. R. Gopal. "Phase Change Properties of Chalcogenide Glasses - Some Interesting Observations." Key Engineering Materials 702 (July 2016): 37–42. http://dx.doi.org/10.4028/www.scientific.net/kem.702.37.

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Chalcogenide glasses switches from a high-resistance (OFF) state to a low-resistance (ON) state at a threshold voltage (Vth) under high electric fields. This electrical switching is of two types: (i) Threshold switching and (i) memory switching. Threshold switching device revert back to the OFF state immediately upon the removal of the applied voltage, whereas a memory device retains the ON state even after the removal of the applied voltage. Due to Joule heating, a filament is formed between the electrodes and the current is confined within this filament and there is an increase in current density. This increases the temperature inside the filament and there is a transition from high resistive amorphous/glass phase to a low resistive crystalline phase in memory switching materials. In the threshold switching glasses electronic processes like space charge, Poole-Frenkel effect, etc., are responsible. The structural transitions are irreversible whereas the electronic processes are reversible and hence the threshold glasses regain their original state (OFF) and memory glasses remain in the ON state.Interestingly, differential scanning calorimetric studies (DSC) show that both the threshold and memory switching glasses exhibit crystallization (structural transition). Accordingly, glasses which crystallize upon heating should exhibit memory switching behaviour. But the switching experiments indicate that among the glasses which undergo structural transition (crystallization) some show threshold switching and some show memory switching. To understand this, Cu-As-Se, Al-As-Te, Ge-As-Se-Te, Al-As-Se-Te glasses were thermally crystallized under vacuum in two ways: (i) by annealing at their respective crystallization temperatures (Tc) and (ii) heated up to their melting temperatures (Tm) and cooled back to room temperature. Interestingly, most of the threshold switching glasses shows amorphous nature or a huge amorphous background with crystalline peaks when cooled from their melting temperatures. The memory switching glasses crystallize in both the cases.We propose that both threshold and memory glasses undergo phase change and the crystalline phases formed from the melt state are responsible for switching to occur. Hence, at the time of switching the sample in between the electrodes undergo phase change by glass → melt → crystal transformation and not by the direct glass → crystal transformation.

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10

Davis, Peter. "Adaptive Mode Selection Using On–Off Switching of Chaos." International Journal of Bifurcation and Chaos 08, no. 08 (August 1998): 1671–74. http://dx.doi.org/10.1142/s0218127498001339.

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Onset of chaotic mode transition can be used in a simple and robust mechanism for adaptation in multimode systems. We present an idealized model of adaptive mode selection using on–off switching of chaotic basin transitions in a multistable system. A stochastic description obtained in the limit of large switching intervals gives search times in terms of projections of the chaotic state onto basins of multistability.

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11

Cheng, Shaobo, Min-Han Lee, Richard Tran, Yin Shi, Xing Li, Henry Navarro, Coline Adda, et al. "Inherent stochasticity during insulator–metal transition in VO2." Proceedings of the National Academy of Sciences 118, no. 37 (September 7, 2021): e2105895118. http://dx.doi.org/10.1073/pnas.2105895118.

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Vanadium dioxide (VO2), which exhibits a near-room-temperature insulator–metal transition, has great potential in applications of neuromorphic computing devices. Although its volatile switching property, which could emulate neuron spiking, has been studied widely, nanoscale studies of the structural stochasticity across the phase transition are still lacking. In this study, using in situ transmission electron microscopy and ex situ resistive switching measurement, we successfully characterized the structural phase transition between monoclinic and rutile VO2 at local areas in planar VO2/TiO2 device configuration under external biasing. After each resistive switching, different VO2 monoclinic crystal orientations are observed, forming different equilibrium states. We have evaluated a statistical cycle-to-cycle variation, demonstrated a stochastic nature of the volatile resistive switching, and presented an approach to study in-plane structural anisotropy. Our microscopic studies move a big step forward toward understanding the volatile switching mechanisms and the related applications of VO2 as the key material of neuromorphic computing.

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12

WASHABAUGH, SCOTT, PAUL D. FRANZON, and H. TROY NAGLE. "SABSA: SWITCHING-ACTIVITY-BASED STATE ASSIGNMENT." International Journal of High Speed Electronics and Systems 05, no. 02 (June 1994): 203–12. http://dx.doi.org/10.1142/s0129156494000115.

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Many algorithms have been proposed for the state assignment of Finite-State Machines. The usual goal of these algorithms is to reduce the area required to implement these machines. This paper discusses SABSA, an algorithm whose goal is to reduce the number of state bit transitions in the operating environment. SABSA does this by considering measured transition probabilities between states. When combined with a technology such as CMOS, this leads to lower power consumption. A RISC controller was taken from high level design to transistor level layout, and a power reduction of 35% was obtained with this new state assignment algorithm.

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13

Zhu, Yida, Haiyong Luo, Qu Wang, Fang Zhao, Bokun Ning, Qixue Ke, and Chen Zhang. "A Fast Indoor/Outdoor Transition Detection Algorithm Based on Machine Learning." Sensors 19, no. 4 (February 14, 2019): 786. http://dx.doi.org/10.3390/s19040786.

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The widespread popularity of smartphones makes it possible to provide Location-Based Services (LBS) in a variety of complex scenarios. The location and contextual status, especially the Indoor/Outdoor switching, provides a direct indicator for seamless indoor and outdoor positioning and navigation. It is challenging to quickly detect indoor and outdoor transitions with high confidence due to a variety of signal variations in complex scenarios and the similarity of indoor and outdoor signal sources in the IO transition regions. In this paper, we consider the challenge of switching quickly in IO transition regions with high detection accuracy in complex scenarios. Towards this end, we analyze and extract spatial geometry distribution, time sequence and statistical features under different sliding windows from GNSS measurements in Android smartphones and present a novel IO detection method employing an ensemble model based on stacking and filtering the detection result by Hidden Markov Model. We evaluated our algorithm on four datasets. The results showed that our proposed algorithm was capable of identifying IO state with 99.11% accuracy in indoor and outdoor environment where we have collected data and 97.02% accuracy in new indoor and outdoor scenarios. Furthermore, in the scenario of indoor and outdoor transition where we have collected data, the recognition accuracy reaches 94.53% and the probability of switching delay within 3 s exceeds 80%. In the new scenario, the recognition accuracy reaches 92.80% and the probability of switching delay within 4 s exceeds 80%.

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14

Tasaka, Yuji, Makoto Iima, and Kentaro Ito. "Rotating flow transition related to surface switching." Journal of Physics: Conference Series 137 (November 1, 2008): 012030. http://dx.doi.org/10.1088/1742-6596/137/1/012030.

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15

Wang, Hsing-Yeh, Hsu-Chieh Cheng, Sheng-Di Lin, and Chien-Ping Lee. "Wavelength switching transition in quantum dot lasers." Applied Physics Letters 90, no. 8 (February 19, 2007): 081112. http://dx.doi.org/10.1063/1.2709987.

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16

Tsai, Chin-Chun, Yi-Chi Lee, and Hsiang-Chen Chui. "Optical switching using controlled two-photon transition." Journal of the Optical Society of America B 31, no. 6 (May 22, 2014): 1347. http://dx.doi.org/10.1364/josab.31.001347.

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17

Stefanovich, G., A. Pergament, and D. Stefanovich. "Electrical switching and Mott transition in VO2." Journal of Physics: Condensed Matter 12, no. 41 (September 26, 2000): 8837–45. http://dx.doi.org/10.1088/0953-8984/12/41/310.

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18

Chudnovskii, F. A., L. L. Odynets, A. L. Pergament, and G. B. Stefanovich. "Electroforming and Switching in Oxides of Transition Metals: The Role of Metal–Insulator Transition in the Switching Mechanism." Journal of Solid State Chemistry 122, no. 1 (February 1996): 95–99. http://dx.doi.org/10.1006/jssc.1996.0087.

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19

Schneider, Darryl W., and Gordon D. Logan. "Task switching versus cue switching: Using transition cuing to disentangle sequential effects in task-switching performance." Journal of Experimental Psychology: Learning, Memory, and Cognition 33, no. 2 (2007): 370–78. http://dx.doi.org/10.1037/0278-7393.33.2.370.

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20

Weld, Christopher, Michael Duarte, and Rex Kincaid. "A Runway Configuration Management Model with Marginally Decreasing Transition Capacities." Advances in Operations Research 2010 (2010): 1–21. http://dx.doi.org/10.1155/2010/436765.

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The runway configuration management (RCM) problem governs what combinations of airport runways are in use at a given time, and to what capacity. Runway configurations (groupings of runways) operate under runway configuration capacity envelopes (RCCEs) which limit arrival and departure capacities. The RCCE identifies unique capacity constraints based on which tarmacs are used for arrivals, departures, or both, and their direction of travel. When switching between RCCEs, some decrement in arrival and departure capacities is incurred by the transition. A previous RCM model (Frankovich et al., 2009) accounted for this cost through a required period of inactivity. In this paper, we instead focus on the introduction and assessment of a model capable of marginally decreasing RCCE capacities during configuration transitions. A transition penalty matrix is introduced, specifying the relative costs (in terms of accepted arrival and departure capacities) for switching between RCCEs. The new model benefits from customizable transition penalties which more closely represent real-world conditions, at a reasonable computational cost.

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21

Soll, David R., Thyagarajan Srikantha, Brian Morrow, Anand Chandrasekhar, Klaus Schröppel, and Shawn Lockhart. "Gene regulation in the white–opaque transition ofCandida albicans." Canadian Journal of Botany 73, S1 (December 31, 1995): 1049–57. http://dx.doi.org/10.1139/b95-356.

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Most strains of Candida albicans switch frequently and reversibly among a number of different phenotypes distinguishable by colony morphology. Previous experiments indicated that switching involved differential gene expression. Using the white–opaque transition as a model switching system, we have cloned two opaque-specific genes, PEP1 and OP4, and one white specific gene, WH11. Differential transcription of these genes suggested that switching involves the coordinate regulation of batteries of unlinked phase-specific genes. It has been demonstrated that the frequency of integration at phase specific loci is a function of the transcriptional state of the phase-specific genes. In addition, a functional dissection of the 5′-upstream region of the WH11 gene has identified two major domains containing cis-acting regulatory sequences that are involved in phase-specific transcription. Gel retardation experiments provide evidence for white phase-specific trans-acting factors which form complexes with both domains. The regulation of the switching event is discussed. Key words: Candida albicans, phenotypic switching, white–opaque transition, phase-specific genes, integrative transformation, promoter regions, WH11 gene.

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22

Cheng, Jun, Hong Zhu, Shouming Zhong, Fengxia Zheng, and Kaibo Shi. "Finite-time boundedness of a class of discrete-time Markovian jump systems with piecewise-constant transition probabilities subject to average dwell time switching." Canadian Journal of Physics 92, no. 2 (February 2014): 93–102. http://dx.doi.org/10.1139/cjp-2013-0097.

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This paper investigates the problem of finite-time boundedness of a class of discrete-time Markovian jump systems with piecewise-constant transition probabilities subject to average dwell time switching. Another set of useful regime-switching models has been given for both fixed transition probability Markov switching models and time-varying transition probabilities. Based on the knowledge of average dwell time and multiple Lyapunov function, a novel sufficient condition for finite-time boundedness of H∞ filtering is derived and the system trajectory stays within a prescribed bound. Finally, an example is provided to illustrate the usefulness and effectiveness of the proposed method.

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23

Morrison, Megan, and Lai-Sang Young. "Chaotic heteroclinic networks as models of switching behavior in biological systems." Chaos: An Interdisciplinary Journal of Nonlinear Science 32, no. 12 (December 2022): 123102. http://dx.doi.org/10.1063/5.0122184.

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Key features of biological activity can often be captured by transitions between a finite number of semi-stable states that correspond to behaviors or decisions. We present here a broad class of dynamical systems that are ideal for modeling such activity. The models we propose are chaotic heteroclinic networks with nontrivial intersections of stable and unstable manifolds. Due to the sensitive dependence on initial conditions, transitions between states are seemingly random. Dwell times, exit distributions, and other transition statistics can be built into the model through geometric design and can be controlled by tunable parameters. To test our model’s ability to simulate realistic biological phenomena, we turned to one of the most studied organisms, C. elegans, well known for its limited behavioral states. We reconstructed experimental data from two laboratories, demonstrating the model’s ability to quantitatively reproduce dwell times and transition statistics under a variety of conditions. Stochastic switching between dominant states in complex dynamical systems has been extensively studied and is often modeled as Markov chains. As an alternative, we propose here a new paradigm, namely, chaotic heteroclinic networks generated by deterministic rules (without the necessity for noise). Chaotic heteroclinic networks can be used to model systems with arbitrary architecture and size without a commensurate increase in phase dimension. They are highly flexible and able to capture a wide range of transition characteristics that can be adjusted through control parameters.

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24

Yang, Zhang, Zhang, Tian, and Hu. "Control Strategy of Mode Transition with Engine Start in a Plug-in Hybrid Electric Bus." Energies 12, no. 15 (August 2, 2019): 2989. http://dx.doi.org/10.3390/en12152989.

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Torque coordinated control of the relevant power sources has an important impact on the vehicle dynamics and driving performance during the mode transition of the hybrid electric vehicles(HEVs). Considering the dynamic impact problem caused by mode transition, this paper, based upon the structural features of axially paralleled hybrid power system, introduces the bumpless mode switching control theory to analyze multi-mode transition. Firstly, the state transition process is abstracted as the state space transition problem of hybrid system. Secondly the mode transition is divided into four sub-states, and the state model of each sub-state is established. Thirdly, taking the cost functions as the optimization objective, the state switching process is solved, and the control vectors of each switching process are obtained. Simulation and experimental results show that the proposed control strategy can effectively suppress torque fluctuation, avoid longitudinal acceleration impact, and improve driving performance.

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25

Du, Huiying, Jinghong Chen, Meilin Tu, Songwen Luo, Shangdong Li, Shuoguo Yuan, Tianxun Gong, Wen Huang, Wenjing Jie, and Jianhua Hao. "Transition from nonvolatile bipolar memory switching to bidirectional threshold switching in layered MoO3 nanobelts." Journal of Materials Chemistry C 7, no. 39 (2019): 12160–69. http://dx.doi.org/10.1039/c9tc03842f.

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26

He, Hui-Kai, Yong-Bo Jiang, Jun Yu, Zi-Yan Yang, Chao-Fan Li, Ting-Ze Wang, De-Quan Dong, et al. "Ultrafast and stable phase transition realized in MoTe₂-based memristive devices." Materials Horizons 9, no. 3 (2022): 1036–44. http://dx.doi.org/10.1039/d1mh01772a.

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An electric-field induced phase transition between semiconducting 2H and metallic 1T′ phases in a MoTe2 device is demonstrated for the first time. The phase transition exhibits faster switching compared with phase-change random-access memory (PCRAM), and shows more controllable switching than conventional memristive devices.

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27

Najm, Farid N., and Michael G. Xakellis. "Statistical Estimation of the ,Switching Activity in VLSI Circuits." VLSI Design 7, no. 3 (January 1, 1998): 243–54. http://dx.doi.org/10.1155/1998/46819.

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Higher levels of integration have led to a generation of integrated circuits for which power dissipation and reliability are major design concerns. In CMOS circuits, both of these problems are directly related to the extent of circuit switching activity. The average number of transitions per second at a circuit node is a measure of switching activity that has been called the transition density. This paper presents a statistical simulation technique to estimate individual node transition densities in combinational logic circuits. The strength of this approach is that the desired accuracy and confidence can be specified up-front by the user. Another key feature is the classification of nodes into two categories: regular- and low-density nodes. Regular-density nodes are certified with user-specified percentage error and confidence levels. Low-density nodes are certified with an absolute error, with the same confidence. This speeds convergence while sacrificing percentage accuracy only on nodes which contribute little to power dissipation and have few reliability problems.

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28

HUA, GUICHAO, and FRED C. LEE. "SOFT-SWITCHING PWM CONVERTER TECHNOLOGIES." Journal of Circuits, Systems and Computers 05, no. 04 (December 1995): 531–58. http://dx.doi.org/10.1142/s0218126695000333.

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The switched-mode power conversion technologies have evolved from the basic PWM converters to resonant converters, quasi-resonant converters, multi-resonant converters, and most recently, to soft-switching PWM converters. In this paper, several typical resonant techniques and several soft-switching PWM techniques are reviewed, and their merits and limitations are assessed. The resonant techniques reviewed include the quasi-resonant converters, multi-resonant converters, Class-E converters, and resonant dc link converters; and the soft-switching PWM techniques reviewed include the zero-voltage-switched (ZVS) quasi-square-wave converters, ZVS-PWM converters, zero-current-switched PWM converters, zero-voltage- transition PWM converters, and zero-current-transition PWM converters.

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29

Barbosa, Lúcio dos Reis. "A Zero-Voltage-Transition Interleaved Boost Converter and Its Application to PFC." Advances in Power Electronics 2011 (December 4, 2011): 1–10. http://dx.doi.org/10.1155/2011/925618.

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An efficient power factor correction converter is presented. Two boost-topology switching cells are interleaved to minimize EMI while operating at lower switching frequency and soft switching to minimize losses. The result is a system with high conversion efficiency, able to operate in a pulse-width-modulation (PWM) way. Seven transition states of the ZVT converter in one switching period are described. In order to illustrate the operational principle key, implementation details, including simulations, are described. The validity of this converter is guaranteed by the obtained results.

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30

Cui, Lian, Zhong Yang Qiu, Zhi You Han, Rui Ying Li, and Ji Xin Che. "Study on the Polarization Reversal Characteristics of a Ferroelectric Thin Film with Surface Transition Layers." Advanced Materials Research 936 (June 2014): 269–75. http://dx.doi.org/10.4028/www.scientific.net/amr.936.269.

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Utilizing the Landau-Khalatnikov equation of motion, the polarization reversal characteristics of a ferroelectric thin film with surface transition layers have been first investigated. We have discussed the effects of the thickness, the surface transition layer parameters and the temperature on the switching properties of a ferroelectric thin film. The results show that the stronger the surface transition layer effects are, the smaller the coercive field and switching time are.

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31

Xie, Jing, Han Du, Guobo Guan, Yaojun Tong, Themistoklis K. Kourkoumpetis, Lixin Zhang, Feng-yan Bai, and Guanghua Huang. "N-Acetylglucosamine Induces White-to-Opaque Switching and Mating in Candida tropicalis, Providing New Insights into Adaptation and Fungal Sexual Evolution." Eukaryotic Cell 11, no. 6 (April 27, 2012): 773–82. http://dx.doi.org/10.1128/ec.00047-12.

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ABSTRACTPathogenic fungi are capable of switching between different phenotypes, each of which has a different biological advantage. In the most prevalent human fungal pathogen,Candida albicans, phenotypic transitions not only improve its adaptation to a continuously changing host microenvironment but also regulate sexual mating. In this report, we show thatCandida tropicalis, another important human opportunistic pathogen, undergoes reversible and heritable phenotypic switching, referred to as the “white-opaque” transition. Here we show thatN-acetylglucosamine (GlcNAc), an inducer of white-to-opaque switching inC. albicans, promotes opaque-cell formation and mating and also inhibits filamentation in a number of naturalC. tropicalisstrains. Our results suggest that host chemical signals may facilitate this phenotypic switching and mating ofC. tropicalis, which had been previously thought to reproduce asexually. Overexpression of theC. tropicalis WOR1gene inC. albicansinduces opaque-cell formation. Additionally, an intermediate phase between white and opaque was observed inC. tropicalis, indicating that the switching could be tristable.

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32

Begam, V. M. Thoulath, and S. Baulkani. "Ring Counter Based ATPG for Low Transition Test Pattern Generation." Scientific World Journal 2015 (2015): 1–6. http://dx.doi.org/10.1155/2015/729165.

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In test mode test patterns are applied in random fashion to the circuit under circuit. This increases switching transition between the consecutive test patterns and thereby increases dynamic power dissipation. The proposed ring counter based ATPG reduces vertical switching transitions by inserting test vectors only between the less correlative test patterns. This paper presents the RC-ATPG with an external circuit. The external circuit consists of XOR gates, full adders, and multiplexers. First the total number of transitions between the consecutive test patterns is determined. If it is more, then the external circuit generates and inserts test vectors in between the two test patterns. Test vector insertion increases the correlation between the test patterns and reduces dynamic power dissipation. The results prove that the test patterns generated by the proposed ATPG have fewer transitions than the conventional ATPG. Experimental results based on ISCAS’85 and ISCAS’89 benchmark circuits show 38.5% reduction in the average power and 50% reduction in the peak power attained during testing with a small size decoding logic.

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33

Peiravan, Zahra, Majid Delshad, and Mohammad Reza Amini. "A new zero voltage transition interleaved flyback converter." International Journal of Power Electronics and Drive Systems (IJPEDS) 13, no. 2 (June 1, 2022): 1026. http://dx.doi.org/10.11591/ijpeds.v13.i2.pp1026-1036.

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The paper introduced a new zero voltage transition (ZVT) interleaved flyback converter which has two similar flyback converters. Two flyback converters are in parallel connection and auxiliary circuit in this converter provides ZVT condition for all of the main switches and also provides zero current switching and zero voltage zero current switching (ZVZCS) conditions for the auxiliary switch. Also, ZCS conditions are created for diodes turning off, so reverse recovery problem is solved. The auxiliary circuit in the suggested converter is modular, and by adding parallel branches to the flyback circuit, this circuit can provide soft switching conditions for all switches without significantly change. A complete analysis of the converter is provided and its operating intervals are explained. A 180 W laboratory prototype of the converter is made to approve the theoretical calculations. The experimental results show 7.7% increase in efficiency.

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34

Hussain, Sabir, and V. Malleshwara Rao. "An approach to Measure Transition Density of Binary Sequences for X-filling based Test Pattern Generator in Scan based Design." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 4 (August 1, 2018): 2063. http://dx.doi.org/10.11591/ijece.v8i4.pp2063-2071.

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<span>Switching activity and Transition density computation is an essential stage for dynamic power estimation and testing time reduction. The study of switching activity, transition densities and weighted switching activities of pseudo random binary sequences generated by Linear Feedback shift registers and Feed Forward shift registers plays a crucial role in design approaches of Built-In Self Test, cryptosystems, secure scan designs and other applications. This paper proposed an approach to find transition densities, which plays an important role in choosing of test pattern generator We have analyze conventional and proposed designs using our approache, This work also describes the testing time of benchmark circuits. The outcome of this paper is presented in the form of algorithm, theorems with proofs and analyses table which strongly support the same. The proposed algorithm reduces switching activity and testing time up to 51.56% and 84.61% respectively.</span>

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35

Brem, M. "Organisational change in agricultural transition." Acta Oeconomica 52, no. 1 (March 2002): 25–55. http://dx.doi.org/10.1556/aoecon.52.2002.1.2.

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This article seeks to contribute to our understanding of farm restructuring in transition by trying to identify driving forces behind organisational change in agriculture. It focuses on the stakeholders’ trade-off between internal transaction costs and switching costs. The article introduces factors determining the level of these two types of costs, such as the original size of the firm, inside-ownership and the type of production for internal transaction costs, and the remaining asset specificity after establishing the formal property rights for switching costs. The theoretical model is tested by data from a recent survey in two regions of the Czech Republic with both qualitative and quantitative analysis. The quantitative analysis characterises the downsizing process of distinguishable restructuring paths of 87 farms. Mechanisms of individual stakeholders’ redeployment decisions are elaborated on the basis of five qualitative case studies. The article shows perspectives of further farm restructuring in European transition countries.

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Choi, Hyun-Chil. "A novel buck converter with soft-switching transition." International Journal of Electronics 89, no. 3 (March 2002): 221–32. http://dx.doi.org/10.1080/00207210210122541.

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Ruperto, N. "SP0163 Switching Measures on the Transition to Adulthood." Annals of the Rheumatic Diseases 72, Suppl 3 (June 2013): A37.4—A37. http://dx.doi.org/10.1136/annrheumdis-2013-eular.163.

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Ribeiro, J. L., T. Dekola, and L. G. Vieira. "Orientation-switching transition and ferroelectricity in betaine arsenate." Journal of Physics: Condensed Matter 21, no. 32 (July 13, 2009): 325901. http://dx.doi.org/10.1088/0953-8984/21/32/325901.

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Ahmad, Azkar Saeed, Yongcheng Liang, Mingdong Dong, Xuefeng Zhou, Leiming Fang, Yuanhua Xia, Jianhong Dai, et al. "Pressure-driven switching of magnetism in layered CrCl3." Nanoscale 12, no. 45 (2020): 22935–44. http://dx.doi.org/10.1039/d0nr04325g.

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Pressure-induced switching of magnetism from FM to AFM phase has been observed in layered CrCl₃. Concurrently, pressure-induced isostructural transition accompanied with an unusual semiconductor-to-semiconductor transition has been reported.

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Deryugina, E., and A. Ponomarenko. "Money-based Inflation Risk Indicator:a regime Switching Model." Voprosy Ekonomiki, no. 9 (September 20, 2013): 119–27. http://dx.doi.org/10.32609/0042-8736-2013-9-119-127.

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We examine the relationship between probability of large fluctuations of inflation rate and monetary developments. With this purpose we identify the periods of high inflation regime for the cross-section of 15 transition economies. The obtained results are used to estimate the panel probit models that capture the relationship between probability of transition to a high inflation regime and money growth. We calculate the conditional probability of transition to a high inflation regime that may be regarded as a money-based inflation risk indicator for Russia.

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Paramonova, Ekaterina, Vladimir Bystrov, Xiangjian Meng, Hong Shen, Jianlu Wang, and Vladimir Fridkin. "Polarization Switching in 2D Nanoscale Ferroelectrics: Computer Simulation and Experimental Data Analysis." Nanomaterials 10, no. 9 (September 15, 2020): 1841. http://dx.doi.org/10.3390/nano10091841.

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The polarization switching kinetics of nanosized ferroelectric crystals and the transition between homogeneous and domain switching in nanoscale ferroelectric films are considered. Homogeneous switching according to the Ginzburg-Landau-Devonshire (LGD) theory is possible only in two-dimensional (2D) ferroelectrics. The main condition for the applicability of the LGD theory in such systems is its homogeneity along the polarization switching direction. A review is given of the experimental results for two-dimensional (2D) films of a ferroelectric polymer, nanosized barium titanate nanofilms, and hafnium oxide-based films. For ultrathin 2D ferroelectric polymer films, the results are confirmed by first-principle calculations. Fitting of the transition region from homogeneous to domain switching by sigmoidal Boltzmann functions was carried out. Boltzmann function fitting data enabled us to correctly estimate the region sizes of the homogeneous switching in which the LGD theory is valid. These sizes contain several lattice constants or monolayers of a nanosized ferroelectrics.

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42

Soll, D. R. "High-frequency switching in Candida albicans." Clinical Microbiology Reviews 5, no. 2 (April 1992): 183–203. http://dx.doi.org/10.1128/cmr.5.2.183.

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Most strains of Candida albicans are capable of switching frequently and reversibly between a number of phenotypes distinguishable by colony morphology. A number of different switching systems have been defined according to the limited set of phenotypes in each switching repertoire, and each strain appears to possess a single system. Switching can affect many aspects of cellular physiology and morphology and appears to be a second level of phenotypic variability superimposed upon the bud-hypha transition. The most dramatic switching system so far identified is the "white-opaque transition." This system dramatizes the extraordinary effects switching can have on the budding cell phenotype, including the synthesis of opaque-specific antigens, the expression of white-specific and opaque-specific genes, and the genesis of unique cell wall structures. Switching has been demonstrated to occur at sites of infection and between episodes of recurrent vaginitis, and it may function to generate variability in commensal and infecting populations for adaptive reasons. Although the molecular mechanisms involved in the switch event are not understood, recent approaches to its elucidation are discussed and an epigenetic mechanism is proposed.

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43

Pergament, A., G. Stefanovich, V. Malinenko, and A. Velichko. "Electrical Switching in Thin Film Structures Based on Transition Metal Oxides." Advances in Condensed Matter Physics 2015 (2015): 1–26. http://dx.doi.org/10.1155/2015/654840.

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Electrical switching, manifesting itself in the nonlinear current-voltage characteristics with S- and N-type NDR (negative differential resistance), is inherent in a variety of materials, in particular, transition metal oxides. Although this phenomenon has been known for a long time, recent suggestions to use oxide-based switching elements as neuristor synapses and relaxation-oscillation circuit components have resumed the interest in this area. In the present review, we describe the experimental facts and theoretical models, mainly on the basis of the Mott transition in vanadium dioxide as a model object, of the switching effect with special emphasis on the emerging applied potentialities for oxide electronics.

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Li, Dasheng, Jonathan M. Goodwill, James A. Bain, and Marek Skowronski. "Scaling behavior of oxide-based electrothermal threshold switching devices." Nanoscale 9, no. 37 (2017): 14139–48. http://dx.doi.org/10.1039/c7nr03865h.

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Materials exhibiting insulator to metal transition (IMT) and transition metal oxides showing threshold switching behavior are considered as promising candidates for selector devices for crossbar non-volatile memory application.

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Cheng, Shaobo, Min-Han Lee, Xing Li, Lorenzo Fratino, Federico Tesler, Myung-Geun Han, Javier del Valle, et al. "Operando characterization of conductive filaments during resistive switching in Mott VO2." Proceedings of the National Academy of Sciences 118, no. 9 (February 23, 2021): e2013676118. http://dx.doi.org/10.1073/pnas.2013676118.

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Vanadium dioxide (VO2) has attracted much attention owing to its metal–insulator transition near room temperature and the ability to induce volatile resistive switching, a key feature for developing novel hardware for neuromorphic computing. Despite this interest, the mechanisms for nonvolatile switching functioning as synapse in this oxide remain not understood. In this work, we use in situ transmission electron microscopy, electrical transport measurements, and numerical simulations on Au/VO2/Ge vertical devices to study the electroforming process. We have observed the formation of V5O9 conductive filaments with a pronounced metal–insulator transition and that vacancy diffusion can erase the filament, allowing for the system to “forget.” Thus, both volatile and nonvolatile switching can be achieved in VO2, useful to emulate neuronal and synaptic behaviors, respectively. Our systematic operando study of the filament provides a more comprehensive understanding of resistive switching, key in the development of resistive switching-based neuromorphic computing.

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Irfan, Sheheera, Yasir A. Haleem, Muhammad Imran Irshad, Muhammad Farooq Saleem, Muhammad Arshad, and Muhammad Habib. "Tunability of the Optical Properties of Transition-Metal-Based Structural Phase Change Materials." Optics 4, no. 2 (May 24, 2023): 351–63. http://dx.doi.org/10.3390/opt4020026.

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Phase transitions are an intriguing yet poorly understood aspect of transition-metal-based materials; these phase transitions can result in changes to the refractive index, absorption coefficient, and other optical properties of the materials. Transition-metal-based materials exist in a variety of crystalline phases and also have metallic, semi-metallic, and semi-conducting characteristics. In this review, we demonstrate that alloyed W- and Mo-based dichalcogenides enable phase transitions in structures, with phase transition temperatures that are tunable across a wide range using various alloy models and modern DFT-based calculations. We also analyze the tuning the optical bandgap of the metal oxide nanoparticles through doping of the transition metal in a manner that is suitable for optical switching and thermal imaging. After the introduction and a brief illustration of the structures and their exceptional properties, we discuss synthetic methodologies and their application as part of important strategies toward the enhanced performance of transition-metal-based dichalcogenides and oxides. In the end, our conclusion highlights the prospects of 2D materials as phase transition materials due to their advantages in terms of scalability and adaptability.

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Urgun, S. "Zero-voltage transition–zero-current transition pulsewidth modulation DC–DC buck converter with zero-voltage switching–zero-current switching auxiliary circuit." IET Power Electronics 5, no. 5 (2012): 627. http://dx.doi.org/10.1049/iet-pel.2011.0304.

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Tominaga, Junji. "An engineering model for high-speed switching in GeSbTe phase-change memory." Applied Physics Express 15, no. 2 (January 21, 2022): 025505. http://dx.doi.org/10.35848/1882-0786/ac4a11.

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Abstract Ge2Sb2Te5 is the most successful phase-change alloy in non-volatile memory using the amorphous-crystal phase transition. In deriving further high performance in switching, especially the transition speed from amorphous to crystal should still be modified. In this work, we examined an ideal Ge2Sb2Te5 alloy based on the Kolobov model using ab-initio molecular dynamics simulations. As a result, it was clear that a uniaxial exchange between vacancies and Ge atoms plays a crucial role in realizing high-speed switching and a large contrast in the resonance bonding state in the alloy. The vacancy engineering enables the alloy switching speed to be extremely faster.

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Banerjee, Writam, Wu Fa Cai, Xiaolong Zhao, Qi Liu, Hangbing Lv, Shibing Long, and Ming Liu. "Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM." Nanoscale 9, no. 47 (2017): 18908–17. http://dx.doi.org/10.1039/c7nr06628g.

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Extrinsic bias controlled, intrinsic anionic rearrangement-based transition from resistive switching to 100 times higher nonlinear complementary switching, and the control of the same at thermally elevated TiN/HfO₂/Pt RRAM.

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Inoue, Katsuma, Kohei Nakajima, and Yasuo Kuniyoshi. "Designing spontaneous behavioral switching via chaotic itinerancy." Science Advances 6, no. 46 (November 2020): eabb3989. http://dx.doi.org/10.1126/sciadv.abb3989.

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Chaotic itinerancy is a frequently observed phenomenon in high-dimensional nonlinear dynamical systems and is characterized by itinerant transitions among multiple quasi-attractors. Several studies have pointed out that high-dimensional activity in animal brains can be observed to exhibit chaotic itinerancy, which is considered to play a critical role in the spontaneous behavior generation of animals. Thus, how to design desired chaotic itinerancy is a topic of great interest, particularly for neurorobotics researchers who wish to understand and implement autonomous behavioral controls. However, it is generally difficult to gain control over high-dimensional nonlinear dynamical systems. In this study, we propose a method for implementing chaotic itinerancy reproducibly in a high-dimensional chaotic neural network. We demonstrate that our method enables us to easily design both the trajectories of quasi-attractors and the transition rules among them simply by adjusting the limited number of system parameters and by using the intrinsic high-dimensional chaos.

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