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Books on the topic 'Surface passivation'

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Published: 4 June 2021
Last updated: 4 May 2024

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1

Black, Lachlan E. New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-32521-7.

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2

Travassos, M. A. Passivation of surface modified aluminium by tungsten and tantalum ion implantationa. Manchester: UMIST, 1994.

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3

S, Higashi Gregg, Irene Eugene A, Ohmi Tadahiro 1939-, and Materials Research Society. Meeting Symposium Y., eds. Surface chemical cleaning and passivation for semiconductor processing: Symposium held April 13-15, 1993, San Francisco, California, U.S.A. Pittsburgh, PA: Materials Research Society, 1993.

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4

J, Nemanich R., ed. Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing: Symposium held April 27-29, 192, San Francisco, California, U.S.A. Pittsburgh, Pa: Materials Research Society, 1992.

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5

Michael, Liehr, ed. Ultraclean semiconductor processing technology and surface chemical cleaning and passivation: Symposium held April 17-19, 1995, San Francisco, California, U.S.A. Pittsburgh, Pa: Materials Research Society, 1995.

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6

R, Jones William, Herrera-Fierro Pilar, and United States. National Aeronautics and Space Administration., eds. The effects of acid passivation, tricresyl phosphate pre-soak, and UV/ozone treatment on the tribology of perfluoropolyether-lubricated 440C stainless steel couples. [Washington, DC: National Aeronautics and Space Administration, 1997.

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7

International, Symposium on Passivity (7th 1994 Technical University of Clausthal Germany). Passivation of metals and semiconductors: Proceedings of the Seventh International Symposium on Passivity, Passivation of Metals and Semiconductors, Technical University of Clausthal, Germany, August 21-26, 1994. Aedermannsdorf, Switzerland: Trans Tech Publications, 1995.

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8

Norman, Hackerman, McCafferty E, Brodd R. J, and Electrochemical Society Corrosion Division, eds. Surfaces, inhibition, and passivation: Proceedings of an international symposium honoring Doctor Norman Hackerman on his seventy-fifth birthday. Pennington, NJ (10 S. Main St., Pennington 08534-2896): Corrosion Division, Electrochemical Society, 1986.

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9

Kim, Danny. Dry passivation studies of GaAs(110) surfaces by gallium oxide thin films deposited by electron cyclotron resonance plasma reactive molecular beam epitaxy for optoelectronic device applications. Ottawa: National Library of Canada, 2001.

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10

Olsson, Claes Olof A. Surface Modification and Passivation of Stainless Steel. Almqvist & Wiksell Internat., 1994.

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11

John, Joachim, ed. Surface Passivation of Industrial Crystalline Silicon Solar Cells. Institution of Engineering and Technology, 2018. http://dx.doi.org/10.1049/pbpo106e.

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12

Surface Passivation of Industrial Crystalline Silicon Solar Cells. Institution of Engineering & Technology, 2018.

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13

Jeng, Shin-Puu. Surface passivation of nickel-chromium alloys at room temperature. 1988.

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14

Black, Lachlan E. New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface. Springer, 2018.

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15

Black, Lachlan E. New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface. Springer London, Limited, 2016.

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16

Black, Lachlan E. New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface. Springer, 2016.

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17

Pearton, S. J., H. Hasegawa, M. Hong, and Z. H. Lu. Compound Semiconductor Surface Passivation and Novel Device Processing: Volume 573. University of Cambridge ESOL Examinations, 2014.

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18

Surface passivation for III-V semiconductor processing: Stable gallium sulphide films by MOCVD. [Washington, D.C.]: National Aeronautics and Space Administration, 1994.

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19

Leong, Keith R. Characterization of surface passivation of crystalline silicon by hydrogenated amorphous silicon using photocarrier radiometry. 2006.

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20

Compound Semiconductor Surface Passivation and Novel Device Processing: Symposium Held April 5-7, 1999, San Francisco, California, U.S.A (Materials Research Society Symposium Proceedings). Materials Research Society, 1999.

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21

Nemanich, Robert J., and C. Robert Helms. Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing: Symposium Held April 27-29, 1992, San Francisco, Cal (Materials Research Society Symposium Proceedings). Materials Research Society, 1992.

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22

(Editor), Michael Liehr, Marc Heyns (Editor), Masataka Hirose (Editor), and Harold Parks (Editor), eds. Ultraclean Semiconductor Processing Technology and Surface Chemical Cleaning and Passivation: Symposium Held April 17-19, 1995, San Francisco, California, ... Research Society Symposium Proceedings). Materials Research Society, 1995.

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23

Irene, Eugene A., and Greg S. Higashi. Surface Chemical Cleaning and Passivation for Semiconductor Processing: Symposium Held April 13-15, 1993, San Francisco, California, U.S.A. (Materials Research Society Symposium Proceedings). Materials Research Society, 1994.

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24

Fernandez-Serra, M. V., and X. Blase. Electronic and transport properties of doped silicon nanowires. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533046.013.2.

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This article describes a number of theoretical works and methods dedicated to the analysis of the atomic and electronic structure, doping properties and transport characteristics of silicon nanowires (SiNWs). The goal is to show how quantum confinement and dimensionality effects can intrinsically change the behavior of SiNWs as compared to their bulk and thin film counterparts. The article begins with a review of work done on surface reconstructions and electronic structure of SiNWs as a function of system doping and passivation. It then considers the problem of doping in SiNWs as well as the methodology typically used to analyze the problems of transport. It also discusses the electronic transport properties of SiNWs as a function of dopant type, along with their chemical functionalization. Finally, it demonstrates how surface dangling-bond defects trap the impurities in SiNWs and neutralize them.
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25

Rai, Dibya Prakash, ed. Advanced Materials and Nano Systems: Theory and Experiment - Part 2. BENTHAM SCIENCE PUBLISHERS, 2022. http://dx.doi.org/10.2174/97898150499611220201.

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The discovery of new materials and the manipulation of their exotic properties for device fabrication is crucial for advancing technology. Nanoscience, and the creation of nanomaterials have taken materials science and electronics to new heights for the benefit of mankind. Advanced Materials and Nanosystems: Theory and Experiment covers several topics of nanoscience research. The compiled chapters aim to update students, teachers, and scientists by highlighting modern developments in materials science theory and experiments. The significant role of new materials in future technology is also demonstrated. The book serves as a reference for curriculum development in technical institutions and research programs in the field of physics, chemistry and applied areas of science like materials science, chemical engineering and electronics. This part covers 12 topics in these areas: 1. Recent advancements in nanotechnology: a human health Perspective 2. An exploratory study on characteristics of SWIRL of AlGaAs/GaAs in advanced bio based nanotechnological systems 3. Electronic structure of the half-Heusler ScAuSn, LuAuSn and their superlattice 4. Recent trends in nanosystems 5. Improvement of performance of single and multicrystalline silicon solar cell using low-temperature surface passivation layer and antireflection coating 6. Advanced materials and nanosystems 7. Effect of nanostructure-materials on optical properties of some rare earth ions doped in silica matrix 8. Nd2Fe14B and SmCO5: a permanent magnet for magnetic data storage and data transfer technology 9. Visible light induced photocatalytic activity of MWCNTS decorated sulfide based nano photocatalysts 10. Organic solar cells 11. Neodymium doped lithium borosilicate glasses 12. Comprehensive quantum mechanical study of structural features, reactivity, molecular properties and wave function-based characteristics of capmatinib
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