Relevant bibliographies by topics / Surface passivation

Academic literature on the topic 'Surface passivation'

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Published: 4 June 2021
Last updated: 4 May 2024

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Journal articles on the topic "Surface passivation"

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Tyagi, Pawan. "GaAs(100) Surface Passivation with Sulfide and Fluoride Ions." MRS Advances 2, no. 51 (2017): 2915–20. http://dx.doi.org/10.1557/adv.2017.380.

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ABSTRACTInteraction of GaAs with sulfur can be immensely beneficial in reducing the deleterious effect of surface states on recombination attributes. Bonding of sulfur on GaAs is also important for developing novel molecular devices and sensors, where a molecular channel can be connected to GaAs surface via thiol functional group. However, the primary challenge lies in increasing the stability and effectiveness of the sulfur passivated GaAs. We have investigated the effect of single and double step surface passivation of n-GaAs(100) by using the sulfide and fluoride ions. Our single-step passivation involved the use of sulfide and fluoride ions individually. However, the two kinds of double-step passivations were performed by treating the n-GaAs surface. In the first approach GaAs surface was firstly treated with sulfide ions and secondly with fluoride ions, respectively. In the second double step approach GaAs surface was first treated with fluoride ions followed by sulfide ions, respectively. Sulfidation was conducted using the nonaqueous solution of sodium sulfide salt. Whereas the passivation steps with fluoride ion was performed with the aqueous solution of ammonium fluoride. Both sulfidation and fluoridation steps were performed either by dipping the GaAs sample in the desired ionic solution or electrochemically. Photoluminescence was conducted to characterize the relative changes in surface recombination velocity due to the single and double step surface passivation. Photoluminescence study showed that the double-step chemical treatment where GaAs was first treated with fluoride ions followed by the sulfide ions yielded the highest improvement. The time vs. photoluminescence study showed that this double-step passivation exhibited lower degradation rate as compared to widely discussed sulfide ion passivated GaAs surface. We also conducted surface elemental analysis using Rutherford Back Scattering to decipher the near surface chemical changes due to the four passivation methodologies we adopted. The double-step passivations affected the shallower region near GaAs surface as compared to the single step passivations.
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Kabalan, Amal. "A Comparative Study on the Effects of Passivation Methods on the Carrier Lifetime of RIE and MACE Silicon Micropillars." Applied Sciences 9, no. 9 (April 30, 2019): 1804. http://dx.doi.org/10.3390/app9091804.

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Silicon micropillars have been suggested as one of the techniques for improving the efficiency of devices. Fabrication of micropillars has been done in several ways—Metal Assisted Chemical Etching (MACE) and Reactive Ion Etching (RIE) being the most popular techniques. These techniques include etching through the surface which results in surface damage that affects the carrier lifetime. This paper presents a study that compares the carrier lifetime of micropillars fabricated using RIE and MACE methods. It also looks at increasing carrier lifetime by surface treatment using three main approaches: surface passivation by depositing Al2O3, surface passivation by depositing SiO2/SiN, and surface passivation by etching using KOH and Hydrofluoric Nitric Acetic (HNA) solution. It was concluded that passivating with SiO2 and SiN results in the highest carrier lifetime on the MACE and RIE pillars.
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Clerix, Jan-Willem J., Golnaz Dianat, Annelies Delabie, and Gregory N. Parsons. "In situ analysis of nucleation reactions during TiCl4/H2O atomic layer deposition on SiO2 and H-terminated Si surfaces treated with a silane small molecule inhibitor." Journal of Vacuum Science & Technology A 41, no. 3 (May 2023): 032406. http://dx.doi.org/10.1116/6.0002493.

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Small-molecule inhibitors have recently been introduced for passivation during area-selective deposition (ASD). Small silanes like ( N, N-dimethylamino)trimethylsilane (DMATMS) selectively react with −OH sites on SiO2 to form a less reactive –OSi(CH3)3 terminated surface. The –OSi(CH3)3 surface termination can inhibit many atomic layer deposition (ALD) processes, including TiCl4/H2O ALD. However, the mechanisms by which ALD is inhibited and by which selectivity is eventually lost are not well understood. This study uses in situ Fourier-transform infrared spectroscopy to probe the adsorption of DMATMS on SiO2 and the subsequent reactions when the passivated surface is exposed to TiCl4/H2O ALD. The chemisorption of DMATMS on isolated –OH groups on SiO2 is shown to inhibit the reaction with TiCl4. Further, we find that starting with an inherently inhibiting H-terminated Si surface, DMATMS can also react with residual –OH groups and reduce the extent of nucleation. Finally, using Rutherford backscattering spectrometry, the effectiveness of DMATMS passivation on SiO2 and H-terminated Si is quantified during extended ALD cycle numbers. The insight into the mechanisms of passivation by DMATMS and passivation loss can enable the rational design of highly selective ASD processes by carefully matching compatible surfaces, passivating agents, and ALD precursors.
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Jones, K. M., M. M. Al-Jassim, and B. L. Soport. "TEM investigation of hydrogen-implanted polycrystalline Si." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 868–69. http://dx.doi.org/10.1017/s0424820100088658.

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Hydrogen implantation for passivating grain boundaries and dislocations in polycrystalline silicon solar cells was studied by TEM and HREM. Back-surface passivation is being investigated because studies have shown that front-side passivation causes serious surface damage with resultant surface recombination velocities as high as 7 x 107 cm/sec. Front-side hydrogenation also restricts solar cell fabrication processes. Since the passivation of defects must occur within the entire volume of the cell, particular emphasis was placed on the depth distribution of hydrogen. The hydrogen implantation was carried out In a Kaufman ion beam system using a beam energy of 0.5-1.5 keV and a beam current of 55 mA for 15 minutes.
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Özeren, Mehmet Derya, Áron Pekker, Katalin Kamarás, and Bea Botka. "Evaluation of surface passivating solvents for single and mixed halide perovskites." RSC Advances 12, no. 44 (2022): 28853–61. http://dx.doi.org/10.1039/d2ra04278a.

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Various surface passivating solvents with different functional groups were used to investigate solvent–perovskite interactions. The identification of the underlying mechanisms provides insight for new surface passivation strategies.
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Vermang, Bart, Aude Rothschild, Karine Kenis, Kurt Wostyn, Twan Bearda, A. Racz, X. Loozen, et al. "Surface Passivation for Si Solar Cells: A Combination of Advanced Surface Cleaning and Thermal Atomic Layer Deposition of Al2O3." Solid State Phenomena 187 (April 2012): 357–61. http://dx.doi.org/10.4028/www.scientific.net/ssp.187.357.

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Thermal atomic layer deposition (ALD) of Al2O3 provides an adequate level of surface passivation for both p-type and n-type Si solar cells. To obtain the most qualitative and uniform surface passivation advanced cleaning development is required. The studied pre-deposition treatments include an HF (Si-H) or oxidizing (Si-OH) last step and finish with simple hot-air drying or more sophisticated Marangoni drying. To examine the quality and uniformity of surface passivation - after cleaning and Al2O3 deposition - carrier density imaging (CDI) and quasi-steady-state photo-conductance (QSSPC) are applied. A hydrophilic surface clean that leads to improved surface passivation level is found. Si-H starting surfaces lead to equivalent passivation quality but worse passivation uniformity. The hydrophilic surface clean is preferred because it is thermodynamically stable, enables higher and more uniform ALD growth and consequently exhibits better surface passivation uniformity.
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Szuromi, Phil. "Optimizing surface passivation." Science 366, no. 6472 (December 19, 2019): 1467.5–1467. http://dx.doi.org/10.1126/science.366.6472.1467-e.

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Meiners, L. G., and H. H. Wieder. "Semiconductor surface passivation." Materials Science Reports 3, no. 3-4 (January 1988): 139–216. http://dx.doi.org/10.1016/s0920-2307(88)80008-2.

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Gaikwad, Pooja Vinod, Nazifa Rahman, Rooshi Parikh, Jalen Crespo, Zachary Cohen, and Ryan M. Williams. "Detection of the Inflammatory Cytokine IL-6 in Complex Human Serum Samples Via Rational Nanotube Surface Passivation Screening." ECS Meeting Abstracts MA2023-01, no. 9 (August 28, 2023): 1124. http://dx.doi.org/10.1149/ma2023-0191124mtgabs.

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In recent years, biosensors have emerged as a tool with strong potential in medical diagnostics. Single-walled carbon nanotube (SWCNT) based optical nanosensors have notably garnered interest due to the unique characteristics of their near-infrared fluorescence emission, including tissue transparency, photostability, and various chiralities with discrete absorption and fluorescence emission bands. The optoelectronic properties of SWCNT are sensitive to the surrounding environment, which makes them suitable for highly selective biosensing. Single-stranded (ss) DNA-wrapped SWCNTs have been reported as optical nanosensors for cancers and metabolic diseases. However, given the complexity of the human protein environment, non-specific interactions occur between SWCNT-based nanosensors and proteins. This inevitably leads to compromised selectivity of SWCNT-based nanosensors unless strategies for prevention are developed and employed. Non-covalent passivation of the ssDNA-SWCNT surface is reported as an excellent strategy to improve nanosensor selectivity in complex biological settings without causing irreversible changes to the optical properties of SWCNTs. Emerging studies have explored and successfully shown passivation using proteins and phospholipids. However, a systematic comparative study of passivating agents has not been done. In this work, we explore and compare the efficacy of select proteins, polymers, and surfactants as passivating agents. We, therefore, sought to evaluate various potential SWCNT surface passivation agents among broad classes of biomolecules and biomaterials. In the category of protein, Bovine serum albumin, dry-fat milk powder, and casein were selected due to their wide application to improve immunoassay selectivity. In the class of polymers, we selected 1 anionic and 2 cationic polymers, namely, polyethylene glycol, poly-ethylene imine, and poly-l-lysine. From surfactants, 2 phospholipids and 1 anionic surfactant: ammonium salt of 1,2-dipalmitoyl-sn-glycero-3-phosphoethanolamine-N-[methoxy(polyethylene glycol)-2000] (16:0 PE2000PEG); 1,2-distearoyl-sn-glycero-3-phosphoethanolamine-N-[amino(polyethylene glycol)-2000] (DSPE PEG phospholipids), and sodium dodecylbenzene sulfonate (SDBS) were selected. We analyzed the ability of all passivation agents to screen the non-specific interactions of ssDNA- SWCNTs in the presence of fetal bovine serum using fluorescence spectroscopy. The non-specific interactions between ssDNA-SWCNTs and proteins lead to a reorientation of the dipole moments and charge transfer in the corona phase around ssDNA-SWCNTs, leading to modulation in the center wavelength of the fluorescence as well as absorption peaks. We hence hypothesized that smaller changes in the center wavelength of the fluorescence peaks of passivated ssDNA-SWCNTs in presence of serum, lead to higher screening effect of the passivation agent towards non-specific interactions. We found that the most successful candidates were poly-L-lysine, polyethylene imine, dry-fat milk powder, and casein, in that order. Moreover, the ability to screen the interference was retained over a period of at least 3 hours. We further experimented with the four different mass ratios of passivating agents to ssDNA-SWCNTs and found that the mass ratio 50:1 for passivating agents: ss-DNA SWCNTs was most optimal. We confirmed the strength of passivation using absorption spectroscopy. We hypothesized that stronger surface saturation of the SWCNT-TAT6 is by a passivating agent in buffer conditions leads to a larger shift in the absorption peaks. We found that for the above successful passivation agents, the order of passivation strength followed the same trend as the screening abilities of the successful passivating agents, supporting this mechanistic hypothesis. Then, we evaluated an antibody-conjugated ssDNA-SWCNT nanosensor for the pro-inflammatory cytokine IL-6 with our successful passivation agents. We assessed the ability of the passivation agents to confer selective detection of IL-6 detection in clinical serum samples from patients with atherosclerosis and rheumatoid arthritis, both anticipated to have high IL-6 levels. Samples were compared to healthy human serum sample controls. We validated SWCNT fluorescence response with traditional immunoassays (ELISA). We expect this study to provide rational strategies to screen interferences from non-specific interactions and improve the selectivity of the SWCNT-based optical nanosensors for in vivo applications.
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Sioncke, Sonja, Claudia Fleischmann, Dennis Lin, Evi Vrancken, Matty Caymax, Marc Meuris, Kristiaan Temst, et al. "S-Passivation of the Ge Gate Stack Using (NH4)2S." Solid State Phenomena 187 (April 2012): 23–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.187.23.

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The last decennia, a lot of effort has been made to introduce new channel materials in a Si process flow. High mobility materials such as Ge need a good gate stack passivation in order to ensure optimal MOSFET operation. Several routes for passivating the Ge gate stack have been explored in the last years. We present here the S-passivation of the Ge gate stack: (NH4)2S is used to create a S-terminated Ge surface. In this paper the S-treatment is discussed. The S-terminated Ge surface is not chemically passive but can still react with air. After gate oxide deposition, the Ge-S bonds are preserved and an adequate passivation is found for pMOS operation.
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Dissertations / Theses on the topic "Surface passivation"

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Osorio, Ruy Sebastian Bonilla. "Surface passivation for silicon solar cells." Thesis, University of Oxford, 2015. https://ora.ox.ac.uk/objects/uuid:46ebd390-8c47-4e4b-8c26-e843e8c12cc4.

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Passivation of silicon surfaces remains a critical factor in achieving high conversion efficiency in solar cells, particularly in future generations of rear contact cells -the best performing cell geometry to date. In this thesis, passivation is characterised as either intrinsic or extrinsic, depending on the origin of the chemical and field effect passivation components in dielectric layers. Extrinsic passivation, obtained after film deposition or growth, has been shown to improve significantly the passivation quality of dielectric films. Record passivation has been achieved leading to surface recombination velocities below 1.5 cm/s for 1 Ωcm n-type silicon covered with thermal oxide, and 0.15 cm/s in the same material covered with a thermal SiO2/PECVD SiNx double layer. Extrinsic field effect passivation, achieved by means of corona charge and/or ionic species, has been shown to decrease by 3 to 10 times the amount of carrier recombination at a silicon surface. A new parametrisation of interface charge, and electron and hole recombination velocities in a Shockley-Read-Hall extended formalism has been used to model accurately silicon surface recombination without the need to incorporate a term relating to space-charge or surface damage recombination. Such a term is unrealistic in the case of an oxide/silicon interface. A new method to produce extrinsic field effect passivation has been developed in which charge is introduced into dielectric films at high temperature and then permanently quenched in place by cooling to room temperature. This approach was investigated using charge due to one or more of the following species: ions produced by corona discharge, Na+, K+, Cs+, Mg2+ and Ca2+. It was implemented on both single SiO2 and double SiO2/SiNx dielectric layers which were then measured for periods of up to two years. The decay of the passivation was very slow and time constants of the order of 10,000 days were inferred for two systems: 1) corona-charge-embedded into oxide grown on textured FZ-Si, and 2) potassium ions driven into an oxide on planar FZ-Si. The extrinsic field effect passivation methods developed in this work allow more flexibility in the combined optimisation of the optical properties and the chemical passivation properties of dielectric films on semiconductors. Increases in cell Voc, Jsc and η parameters have been observed in simulations and obtained experimentally when extrinsic field effect passivation is applied to the front surface of silicon solar cells. The extrinsic passivation reported here thus represents a major advancement in controlled and stable passivation of silicon surfaces, and shows great potential as a scalable and cost effective passivation technology for solar cells.
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Chang, Wai-Kit. "Porous silicon surface passivation and optical properties." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/41426.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1996.
"June 1996."
Includes bibliographical references (leaves 84-85).
by Wai-Kit Chang.
S.M.
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Sun, Shiyu. "Germanium surface cleaning, passivation, and initial oxidation /." May be available electronically:, 2007. http://proquest.umi.com/login?COPT=REJTPTU1MTUmSU5UPTAmVkVSPTI=&clientId=12498.

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Michalak, David Jason Gray Harry B. "Physics and chemistry of silicon surface passivation /." Diss., Pasadena, Calif. : Caltech, 2006. http://resolver.caltech.edu/CaltechETD:etd-05082006-074414.

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Antu, Antara Debnath. "Morphology and Surface Passivation of Colloidal PbS Nanoribbons." Bowling Green State University / OhioLINK, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1499383746861722.

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Benrabah, Sabria. "Passivation des matériaux III-N de type GaN." Thesis, Lyon, 2021. http://www.theses.fr/2021LYSE1310.

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Pour répondre aux demandes de développement de nouveaux produits dans les domaines des convertisseurs électroniques de puissance pour les voitures électriques, des panneaux solaires, des éoliennes et des nouvelles technologies d'éclairage à base de LED ou de composants RF, la recherche s'est concentrée sur les matériaux à large bande interdite directe, dont le nitrure de gallium (GaN). Le GaN a suscité un grand intérêt en raison de ses propriétés exceptionnelles pour les dispositifs électroniques de puissance de la prochaine génération. Avec une vitesse de saturation élevée et une tension de fonctionnement élevée, les dispositifs à base de GaN peuvent fonctionner à haute fréquence et avec un excellent rendement, ce qui fait du GaN un matériau de choix dans les applications de puissance. Cependant, le développement des matériaux III-N est encore immature, notamment en ce qui concerne le contrôle de la qualité des différentes interfaces au sein des dispositifs. La présence d'une forte densité d'états d'interfaces peut être à l'origine de dysfonctionnements du dispositif. Par conséquent, la compréhension et le contrôle de la surface du GaN constituent un défi pour une éventuelle intégration industrielle future. Aujourd'hui, il n'existe pas de préparation de surface standard appropriée et efficace pour le GaN. Afin d'étudier ce problème, ce projet de thèse a été réalisé dans le cadre d'une collaboration entre le CEA-LETI (Grenoble), le LTM (Grenoble) et les laboratoires CP2M (Catalyse, Polymérisation, Procédés et Matériaux, Lyon). Les principaux objectifs de ce projet sont, d'une part, de comprendre la chimie de surface suite à différentes préparations de surface, et d'autre part, de mettre en place la configuration des liaisons de surface. Ce projet de thèse s'est donc concentré sur la préparation et la caractérisation de l'extrême surface de GaN après divers traitements chimiques et physiques
To meet demands for the development of new products in the fields of power electronic convertors for electric cars, solar panels, wind turbines, and new LED-based lightening technologies or RF components, research has focused on direct wide bandgap materials, including Gallium Nitride (GaN). GaN has attracted significant interest due to its exceptional properties for next-generation power electronic devices. With a high saturation velocity and a high operating voltage, GaN-based devices can operate at high frequency and with excellent efficiency, making GaN a material of choice in power applications. However, the development of III-N materials is still immature, especially in terms of quality control of the various interfaces within the devices. The presence of high density of interfaces states can be the cause of device malfunctions. Therefore, understanding and controlling the surface of GaN is a challenge for possible future industrial integration. Today, there is no suitable and effective standard surface preparation of GaN. In order to investigate this problem, this PhD project was carried out in a collaboration between CEA-LETI (Grenoble), LTM (Grenoble) and CP2M laboratories (Catalysis, Polymerisation, Process and Materials, Lyon). The main objectives of this project are, first, to understand the surface chemistry following various surface preparations, and second, to set up the configuration of surface bonds. Therefore, this PhD project focused on the preparation and characterisation of the extreme surface of GaN after various chemical and physical treatments
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Flynn, Christopher Richard ARC Centre of Excellence in Advanced Silicon Photovoltaics &amp Photonics Faculty of Engineering UNSW. "Sputtering for silicon photovoltaics: from nanocrystals to surface passivation." Awarded by:University of New South Wales. ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, 2009. http://handle.unsw.edu.au/1959.4/44686.

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Deposition of thin material films by sputtering is an increasingly common process in the field of silicon (Si)-based photovoltaics. One of the recently developed sputter-deposited materials applicable to Si photovoltaics comprises Si nanocrystals (NCs) embedded in a Si-based dielectric. The particular case of Si nanocrystals in a Silicon Dioxide (SiO2) matrix was studied by fabricating metal-insulator-semiconductor (MIS) devices, in which the insulating layer consists of a single layer of Si NCs in SiO2 deposited by sputtering (Si:NC-MIS devices). These test structures were subjected to impedance measurements. The presence of Si NCs was found to result in two distinct capacitance peaks. The first of these peaks is attributable to the small signal response of states at the insulator/substrate interface, enhanced by the presence of fixed charge associated with the NC layer. The second peak, which occurs without precedent, is due to external inversion layer coupling, in conjunction with a transition between tunnel-limited and semiconductor-limited electron current. Si:NC-MIS devices are also potential test structures for energy-selective contacts, based on SiO2/Si NC/SiO2 double barrier structures fabricated by sputtering. Using a one-dimensional model, current-voltage (I-V) curve simulations were performed for similar structures, in which the Si NCs are replaced by a Si quantum well (QW). The simulations showed that for non-degenerately doped Si substrates, the density of defects in the SiO2 layers can strongly influence the position of I-V curve structure induced by QW quasi-bound states. Passivation of crystalline Si (c-Si) surfaces by sputter-deposited dielectric films is another major application of sputtering for Si photovoltaics. This application was explored for the cases of sputtered SiO2 and hydrogenated Silicon Oxy-Carbide (SiOC:H). For the case of sputtered SiO2, an effective surface recombination velocity of 146 cm/s was achieved for an injection level of 1E15 cm???3. The investigated SiOC:H films were found to be unsuitable for surface passivation of Si, however their passivation performance could be slightly improved by first coating the Si surface with a chemically-grown or sputtered SiO2 layer. The investigations performed into specific aspects of sputter-deposited SiO2, Si NCs, and SiOC:H have highlighted important properties of these films, and confirmed the effectiveness of sputtering as a deposition technology for Si photovoltaics.
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Pereau, Alban Jean-Joel. "Rear surface passivation for high efficiency silicon solar cells." Thesis, Heriot-Watt University, 2013. http://hdl.handle.net/10399/2828.

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In order to adapt laser grooved buried contact (LGBC) solar cells to a thinner silicon substrate than usually used, we have investigated the reduction of charge carrier loss at the rear surface of p-type silicon wafers by plasma-enhanced chemical vapour deposition (PECVD) of a-Si:H and SiNx films. The efficiency of these passivating films has been measured via the surface recombination velocity (SRV) which is wanted as low as possible. The SRV values of our samples have been compared with the expected theoretical values given by the Shockley-Read Hall (SRH) recombination model. SRH theory is a description of the electron-hole recombination via defects inducing energy levels in the forbidden bandgap. This way of recombination is the predominant mode for semiconductors with indirect bandgaps like silicon. Two influential factors in regard to SRV can be understood from this theory. These two factors are the electron to hole capture cross section ratio and the fixed charge density Qf at the silicon substrate/film interface. These two factors induce an asymmetry between the electron and the hole recombination and are responsible for the excess charge carrier concentration dependence of the SRV. In other words, the SRV depends on the illumination intensity. In this work, the SRV has been measured for an excess charge carrier injection level in the 1.1013-1.1016 cm-3 range and then it has been compared with the theoretical value given by the SRH theory in order to determine the fixed charge density and have an estimation of the defect characteristics including its density. Simulations of LGBC cells under one sun illumination have then been performed using the PC1D5 software. The measured SRV value corresponding to one sun has been integrated in the simulation and the expected efficiency has been extracted as a function of the wafer thickness. It results from this study that 150μm LGBC solar cells can theoretically have an efficiency of 19% by the integration of passivating SiNx films. A second aspect of this work is an effort to understand the relation between the passivating film quality, structure, and the PECVD parameters during deposition. The films have been characterized principally by ellipsometry and also by XPS. All of our SiNx films are located in the Si-rich region (x<1.1) and the passivating quality increases with x.
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Motahari, Sara. "Surface Passivation of CIGS Solar Cells by Atomic Layer Deposition." Thesis, KTH, Kraft- och värmeteknologi, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-127430.

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Thin film solar cells, such as Cu(In,Ga)Se2, have a large potential for cost reductions, due to their reduced material consumption. However, the lack in commercial success of thin film solar cells can be explained by lower efficiency compared to wafer-based solar cells. In this work, we have investigated the aluminum oxide as a passivation layer to reduce recombination losses in Cu(In,Ga)Se2 solar cells to increase their efficiency. Aluminum oxides have been deposited using spatial atomic layer deposition. Blistering caused by post-deposition annealing of thick enough alumina layer was suggested to make randomly arranged point contacts to provide an electrical conduction path through the device. Techniques such as current-voltage measurement, photoluminescence and external quantum efficiency were performed to measure the effectiveness of aluminum oxide as a passivation layer. Very high photoluminescence intensity was obtained for alumina layer between Cu(In,Ga)Se2/CdS hetero-junction after a heat treatment, which shows a reduction of defects at the absorber/buffer layers of the device.
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St-Arnaud, Ken. "Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau." Mémoire, Université de Sherbrooke, 2015. http://hdl.handle.net/11143/7723.

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Ce projet de recherche vise à caractériser l'influence de divers traitements de passivation de surface de l'arséniure de gallium (GaAs) sur les propriétés électriques et optiques de ce matériau. Les procédés de passivation étudiés sont les traitements au soufre (NH[indice inférieur 4])[indice inférieur 2]S et les dépôts de nitrure de silicium SiN[indice inférieur x] et trois types de substrat ont été utilisés à titre comparatif, un type N (10[indice supérieur 16]), un type N+ (10[indice supérieur 18]) et un non dopé. Dans ce dernier cas, un système de déposition chimique en phase vapeur assistée par plasma (PECVD) a été utilisé et l'influence de la fréquence de la source d'alimentation AC du plasma a été étudiée. Des techniques de caractérisation électrique, optique et électro-optique ont été utilisées pour l'étude. Des structures métal-isolant-semiconducteur (MIS) ont été réalisées pour les mesures AC et DC de capacité à plusieurs fréquences. L'analyse des mesures électriques a permis de démontrer un plus grand détachement du niveau de Fermi pour les échantillons passivés avec un dépôt de nitrure de silicium SiN[indice inférieur x] à basse fréquence plutôt qu'à haute fréquence. Des mesures optiques en continu et résolue en temps ont été effectuées sur une série d'échantillons de GaAs présentant différents niveaux de dopage et différents traitements de surface. Les mesures de photoluminescence en continu et les mesures résolues en temps montrent que les propriétés optiques des dispositifs dépendent grandement du type de substrat utilisé. Plus d'information sur le champ surfacique des dispositifs est nécessaire pour conclure sur l'efficacité de la passivation. Pour obtenir cette information, des mesures de photoluminescence, continues et résolues en temps, ont aussi été effectuées sur les structures MIS en présence d'un champ électrique. Ces mesures n'ont pas permis de mettre en évidence l'influence de la modification du champ de surface sur l'intensité du signal de luminescence, et ce peu importe le procédé de traitement de surface utilisé. Finalement, des antennes THz ont été fabriquées sur un substrat de SI-GaAs passivé par le traitement PECVD à basse fréquence. Ces antennes émettent un champ THz plus intense et avec un plus grand contenu fréquentiel que celle fabriquée sans traitement de passivation.
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Books on the topic "Surface passivation"

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Black, Lachlan E. New Perspectives on Surface Passivation: Understanding the Si-Al2O3 Interface. Cham: Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-32521-7.

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Travassos, M. A. Passivation of surface modified aluminium by tungsten and tantalum ion implantationa. Manchester: UMIST, 1994.

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S, Higashi Gregg, Irene Eugene A, Ohmi Tadahiro 1939-, and Materials Research Society. Meeting Symposium Y., eds. Surface chemical cleaning and passivation for semiconductor processing: Symposium held April 13-15, 1993, San Francisco, California, U.S.A. Pittsburgh, PA: Materials Research Society, 1993.

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J, Nemanich R., ed. Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing: Symposium held April 27-29, 192, San Francisco, California, U.S.A. Pittsburgh, Pa: Materials Research Society, 1992.

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Michael, Liehr, ed. Ultraclean semiconductor processing technology and surface chemical cleaning and passivation: Symposium held April 17-19, 1995, San Francisco, California, U.S.A. Pittsburgh, Pa: Materials Research Society, 1995.

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R, Jones William, Herrera-Fierro Pilar, and United States. National Aeronautics and Space Administration., eds. The effects of acid passivation, tricresyl phosphate pre-soak, and UV/ozone treatment on the tribology of perfluoropolyether-lubricated 440C stainless steel couples. [Washington, DC: National Aeronautics and Space Administration, 1997.

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International, Symposium on Passivity (7th 1994 Technical University of Clausthal Germany). Passivation of metals and semiconductors: Proceedings of the Seventh International Symposium on Passivity, Passivation of Metals and Semiconductors, Technical University of Clausthal, Germany, August 21-26, 1994. Aedermannsdorf, Switzerland: Trans Tech Publications, 1995.

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Norman, Hackerman, McCafferty E, Brodd R. J, and Electrochemical Society Corrosion Division, eds. Surfaces, inhibition, and passivation: Proceedings of an international symposium honoring Doctor Norman Hackerman on his seventy-fifth birthday. Pennington, NJ (10 S. Main St., Pennington 08534-2896): Corrosion Division, Electrochemical Society, 1986.

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Kim, Danny. Dry passivation studies of GaAs(110) surfaces by gallium oxide thin films deposited by electron cyclotron resonance plasma reactive molecular beam epitaxy for optoelectronic device applications. Ottawa: National Library of Canada, 2001.

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Olsson, Claes Olof A. Surface Modification and Passivation of Stainless Steel. Almqvist & Wiksell Internat., 1994.

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Book chapters on the topic "Surface passivation"

1

Zhang, Xiaoge Gregory. "Passivation and Surface Film Formation." In Corrosion and Electrochemistry of Zinc, 65–91. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4757-9877-7_3.

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Sioncke, Sonja, Yves J. Chabal, and Martin M. Frank. "Germanium Surface Conditioning and Passivation." In Handbook of Cleaning in Semiconductor Manufacturing, 429–72. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2011. http://dx.doi.org/10.1002/9781118071748.ch12.

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Mönch, Winfried. "Surface Passivation by Adsorbates and Surfactants." In Semiconductor Surfaces and Interfaces, 377–84. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-662-04459-9_18.

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Mönch, Winfried. "Surface Passivation by Adsorbates and Surfactants." In Semiconductor Surfaces and Interfaces, 299–305. Berlin, Heidelberg: Springer Berlin Heidelberg, 1993. http://dx.doi.org/10.1007/978-3-662-02882-7_18.

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Mönch, Winfried. "Surface Passivation by Adsorbates and Surfactants." In Semiconductor Surfaces and Interfaces, 340–46. Berlin, Heidelberg: Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-662-03134-6_18.

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Groll, Juergen, and Martin Moeller. "Surface Passivation for Single Molecule Detection." In Encyclopedia of Biophysics, 2531–36. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-16712-6_576.

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Hoex, Bram. "Surface Passivation and Emitter Recombination Parameters." In Photovoltaic Solar Energy, 114–24. Chichester, UK: John Wiley & Sons, Ltd, 2017. http://dx.doi.org/10.1002/9781118927496.ch12.

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Yates, John T. "Wall Passivation in Stainless Steel Ultrahigh Vacuum Systems." In Experimental Innovations in Surface Science, 136–37. New York, NY: Springer New York, 1998. http://dx.doi.org/10.1007/978-1-4612-2304-7_44.

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Veinot, Jonathan. "Surface Passivation and Functionalization of Si Nanocrystals." In Silicon Nanocrystals, 155–72. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2010. http://dx.doi.org/10.1002/9783527629954.ch6.

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Loup, Virginie, Pascal Besson, Olivier Pollet, Eugénie Martinez, Emmanuelle Richard, and Sandrine Lhostis. "Germanium Surface Passivation Using Ozone Gaseous Phase." In Solid State Phenomena, 37–40. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-46-9.37.

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Conference papers on the topic "Surface passivation"

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WADA, Yoshinori, Yoichi MADA, and Kazumi WADA. "A New Surface Passivation of GaAs Using CVD --Atomic Layer Passivation--." In 1991 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1991. http://dx.doi.org/10.7567/ssdm.1991.d-5-4.

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Rajan, Siddharth, Yi Pei, Zhen Cheng, Steven P. DenBaars, and Umesh K. Mishra. "Surface Passivation of AlGaN/GaN HEMTs." In 2008 66th Annual Device Research Conference (DRC). IEEE, 2008. http://dx.doi.org/10.1109/drc.2008.4800769.

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PURANDARE, R., B. A. KURUVILLA, S. M. CHAUDHARI, D. M. PHASE, and S. K. KULKARNI. "PASSIVATION INVESTIGATIONS OF GaAs (100) SURFACE." In Proceedings of the International Workshop. WORLD SCIENTIFIC, 2004. http://dx.doi.org/10.1142/9789812702876_0009.

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Selvaduray, Guna, and Steve Trigwell. "Effect of Surface Treatment on Surface Characteristics and Biocompatibility of AISI 316L Stainless Steel." In ASME 2006 Frontiers in Biomedical Devices Conference. ASMEDC, 2006. http://dx.doi.org/10.1115/nanobio2006-18031.

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Surface characteristics are essential in determining the biocompatibility of medical implants. Surface treatments such as mechanical polishing, electropolishing, passivation and plastic strain of AISI 316L stainless steel was found to affect the critical surface tension, with the combined electropolishing and passivation treatment resulting in the most desirable critical surface tension for biocompatibility. AES and XPS analysis showed that electropolishing results in changing the surface chemical composition significantly. There is significant Cr enrichment on the surface, compared to the bulk. The surface Cr and Fe exist as a combination of oxides and hydroxides.
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Tao, M. "A new surface passivation technique for crystalline Si solar cells: Valence-mending passivation." In 2008 33rd IEEE Photovolatic Specialists Conference (PVSC). IEEE, 2008. http://dx.doi.org/10.1109/pvsc.2008.4922639.

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Choi, Jong-Hwa, and Hee Chul Lee. "Electrochemical CdTe deposition for HgCdTe surface passivation." In International Symposium on Optical Science and Technology, edited by Randolph E. Longshore and Sivalingam Sivananthan. SPIE, 2002. http://dx.doi.org/10.1117/12.453820.

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Wei, Peng, Kelin Zheng, Liwen Wang, Dongfeng Geng, and Xianjun Su. "Surface passivation of backside-illuminated InSb FPAs." In International Symposium on Optoelectronic Technology and Application 2016. SPIE, 2016. http://dx.doi.org/10.1117/12.2245810.

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Zheng, Da’nong, Yaoyao Sun, Zhi Jiang, Chunyan Guo, Yuexi Lv, Dongwei Jiang, Guowei Wang, et al. "Surface passivation of 1550nm AlxInyAsSb avalanche photodiode." In Optoelectronic Devices and Integration VII, edited by Baojun Li, Changyuan Yu, Xuping Zhang, and Xinliang Zhang. SPIE, 2018. http://dx.doi.org/10.1117/12.2500523.

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Hariz, Alex J. "Release and surface-passivation techniques of stiction-free surface micromachined structures." In SPIE's International Symposium on Smart Materials, Nano-, and Micro- Smart Systems, edited by Erol C. Harvey, Derek Abbott, and Vijay K. Varadan. SPIE, 2002. http://dx.doi.org/10.1117/12.472815.

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Norling, Martin, Dan Kuylenstierna, Andrei Vorobiev, Klaus Reimann, Dimitri Lederer, Jean-Pierre Raskin, and Spartak Gevorgian. "Comparison of high-resistivity silicon surface passivation methods." In 2007 European Microwave Integrated Circuit Conference. IEEE, 2007. http://dx.doi.org/10.1109/emicc.2007.4412687.

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Reports on the topic "Surface passivation"

1

Adhikari, Hemant, Shiyu Sun, Piero Pianetta, Chirstopher E. D. Chidsey, and Paul C. McIntyre. Surface Passivation of Germanium Nanowires. Office of Scientific and Technical Information (OSTI), May 2005. http://dx.doi.org/10.2172/890831.

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Clark, E. Evaluation of Alternate Surface Passivation Methods (U). Office of Scientific and Technical Information (OSTI), May 2005. http://dx.doi.org/10.2172/890165.

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Clark, Elliot A. Evaluation of Alternate Stainless Steel Surface Passivation Methods. Office of Scientific and Technical Information (OSTI), May 2005. http://dx.doi.org/10.2172/881451.

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Das, Ujjwal, Ajeet Rohatgi, Clemens Heske, Ajay Upadhyaya, Tasnim Mouri, Amandee Hua, Isaac Lam, et al. Novel and effective surface passivation for high efficiency n- and p-type Silicon solar cell. Office of Scientific and Technical Information (OSTI), March 2022. http://dx.doi.org/10.2172/1859832.

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Schultz-Wittmann, Oliver. Back-Surface Passivation for High-Efficiency Crystalline Silicon Solar Cells: Final Technical Progress Report, September 2010 -- May 2012. Office of Scientific and Technical Information (OSTI), July 2012. http://dx.doi.org/10.2172/1048995.

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Markunas, R. J., G. G. Fountain, R. A. Rudder, and S. V. Hattangady. Passivation and Gating of GaAs and Si Surfaces Using Pseudomorphic Structures. Fort Belvoir, VA: Defense Technical Information Center, February 1990. http://dx.doi.org/10.21236/ada219351.

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Rubloff, G. W., and M. Liehr. Growth and Surface Chemistry of Passivating Insulators for Silicon Technology. Fort Belvoir, VA: Defense Technical Information Center, February 1992. http://dx.doi.org/10.21236/ada247243.

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Acosta Perez, Lina. Development of electronically passivating surfaces to enhance battery performance. Office of Scientific and Technical Information (OSTI), September 2021. http://dx.doi.org/10.2172/1821259.

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Wilmont, Martyn, Greg Van Boven, and Tom Jack. GRI-96-0452_1 Stress Corrosion Cracking Under Field Simulated Conditions I. Chantilly, Virginia: Pipeline Research Council International, Inc. (PRCI), November 1997. http://dx.doi.org/10.55274/r0011963.

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Electrochemical measurements have been performed on polished and mill scaled steel samples. The solutions investigated have included carbonate bicarbonate mixtures of varying pH as well as solutions of neutral pH such as NS4. Results indicate that the mechanism of corrosion associated with the carbonate bicarbonate environments involves passive film formation. No such passivation is observed for solutions associated with neutral pH SCC. Electrochemical corrosion rates measured on polished steel specimens exposed to NS4 solutions in the pH range 5 to 6.8 were in the region of 5 x 10e-1 to 1 x 10e-2 mm/s. However, rates obtained on mill scaled surfaces went much lower and in the region of 5 x 10e-10 mm/s. Field determined crack propagation rates are estimated to be in the region of 2 x 10e-8 mm/s. Whilst the laboratory determined corrosion rates are lower than the field propagation rate it should be remembered that the laboratory rates were obtained on unstressed specimens. The application of load would be expected to increase the corrosion rate and may indicate that stress focused dissolution process may be sufficient to explain the propagation of neutral pH stress corrosion cracks. However, as hydrogen evolution is the most likely cathodic reaction involved in the mechanism of neutral pH SCC the role of hydrogen in the crack propagation mechanism may also be important.
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