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Journal articles on the topic 'Suns-Voc'

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Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Pikna, Peter, Vlastimil Píč, Vítězslav Benda, and Antonín Fejfar. "ANNEALING OF POLYCRYSTALLINE THIN FILM SILICON SOLAR CELLS IN WATER VAPOUR AT SUB-ATMOSPHERIC PRESSURES." Acta Polytechnica 54, no. 5 (October 31, 2014): 341–47. http://dx.doi.org/10.14311/ap.2014.54.0341.

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Thin film polycrystalline silicon (poly-Si) solar cells were annealed in water vapour at pressures below atmospheric pressure. PN junction of the sample was contacted by measuring probes directly in the pressure chamber filled with steam during passivation. Suns-VOC method and a Lock-in detector were used to monitor an effect of water vapour to VOC of the solar cell during whole passivation process (in-situ). Tested temperature of the sample (55°C – 110°C) was constant during the procedure. Open-circuit voltage of a solar cell at these temperatures is lower than at room temperature. Nevertheless, voltage response of the solar cell to the light flash used during Suns-VOC measurements was good observable. Temperature dependences for multicrystalline wafer-based and polycrystalline thin film solar cells were measured and compared. While no significant improvement of thin film poly-Si solar cell parameters by annealing in water vapour at under-atmospheric pressures was observed up to now, in-situ observation proved required sensitivity to changing VOC at elevated temperatures during the process.

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2

Gunawan, Oki, Tayfun Gokmen, and David B. Mitzi. "Suns-VOC characteristics of high performance kesterite solar cells." Journal of Applied Physics 116, no. 8 (August 28, 2014): 084504. http://dx.doi.org/10.1063/1.4893315.

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3

AI, Bin. "QE and Suns-Voc study on the epitaxial CSiTF solar cells." Science in China Series E 48, no. 1 (2005): 41. http://dx.doi.org/10.1360/04ye0201.

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4

Cuevas, Andres, and Jason Tan. "Analytical and computer modelling of suns–Voc silicon solar cell characteristics." Solar Energy Materials and Solar Cells 93, no. 6-7 (June 2009): 958–60. http://dx.doi.org/10.1016/j.solmat.2008.11.041.

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5

Roth, Thomas, Jochen Hohl-Ebinger, Daniela Grote, Evelyn Schmich, Wilhelm Warta, Stefan W. Glunz, and Ronald A. Sinton. "Illumination-induced errors associated with suns-VOC measurements of silicon solar cells." Review of Scientific Instruments 80, no. 3 (March 2009): 033106. http://dx.doi.org/10.1063/1.3095441.

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6

Hidayat, H., P. I. Widenborg, and A. G. Aberle. "Large-area Suns-Voc Tester for Thin-film Solar Cells on Glass Superstrates." Energy Procedia 15 (2012): 258–64. http://dx.doi.org/10.1016/j.egypro.2012.02.030.

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7

Nesswetter, H., N. R. Jost, P. Lugli, A. W. Bett, and C. G. Zimmermann. "Determination of subcell I-V parameters by a pulsed suns-Voc method including optical coupling." Applied Physics Letters 106, no. 2 (January 12, 2015): 023903. http://dx.doi.org/10.1063/1.4906237.

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8

Lantratov, Vladimir M., Sergey A. Mintairov, Sergey A. Blokhin, Nikolay A. Kalyuzhnyy, Nikolay N. Ledentsov, Maxim V. Maximov, Alexey M. Nadtochiy, Alexey S. Pauysov, Alexey V. Sakharov, and Maxim Z. Shvarts. "AlGaAs/GaAs Photovoltaic Cells with InGaAs Quantum Dots." Advances in Science and Technology 74 (October 2010): 231–36. http://dx.doi.org/10.4028/www.scientific.net/ast.74.231.

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We studied the different carrier kinetic mechanisms involved into the interband absorption of quantum dots (QDs) by photocurrent spectroscopy. It was shown that in vertically coupled InGaAs QDs an effective carrier emission, collection and separation take place due to minizone formation. The possibility for the incorporation of vertically-coupled QDs into solar cells (SC) without any deterioration of structural quality of the p-i-n-junction has been shown. Due to the additional absorption of solar spectrum in QD media and the subsequent effective separation of photogenerated carriers, an increase (~1%) in short-circuit current density (Jsc) for the QD SC-devices has been demonstrated. However the insertion of QDs into intrinsic region reduced the open circuit voltage (Voc) of such devices. Moving the QD array in the base layer as well as including the Bragg reflector (BR) centered on 920 nm resulted in increase of the Voc. Moreover an improved absorption in the QD media for SC with BR led to further increase of Jsc (~1%). The efficiency for QD SCs at the level of 25% (30 suns AM1.5D) has been demonstrated.

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9

Sedao, Xxx, Rémi Torres, Thierry Sarnet, Philippe Delaporte, and Marc Sentis. "Laser Textured Black Silicon Solar Cells with Improved Efficiencies." Advanced Materials Research 321 (August 2011): 240–45. http://dx.doi.org/10.4028/www.scientific.net/amr.321.240.

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Femtosecond laser irradiation of silicon has been used for improving light absorption at its surface. In this work we demonstrate the successful implementation of femtosecond laser texturisation to enhance light absorption at Si solar cell surface. In order to adapt this technology into solar industry, the texturisation process is carried out in air ambient. The microstructure similar to what has been produced in vacuum can be made in air by using appropriate laser conditions. The texturised surface shows excellent optical properties with a reflectivity down to 7% without crystalline orientation dependence. Junction formation and metallisation proceeded after texturisation. Suns-Voc measurements are performed to evaluate the cell performance and decent electrical characteristics have been achieved.

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10

Nayak, Mrutyunjay, Sapna Mudgal, Sonpal Singh, and Vamsi K. Komarala. "Investigation of anomalous behaviour in J-V and Suns-Voc characteristics of carrier-selective contact silicon solar cells." Solar Energy 201 (May 2020): 307–13. http://dx.doi.org/10.1016/j.solener.2020.03.018.

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11

Zhu, Peng, Yuan Liu, Chengjiang Cao, Juan Tian, Aichuang Zhang, and Deliang Wang. "Low Recombination Firing-Through Al Paste for N-Type Solar Cell with Boron Emitter." Materials 14, no. 4 (February 6, 2021): 765. http://dx.doi.org/10.3390/ma14040765.

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A kind of low recombination firing-through screen-printing aluminum (Al) paste is proposed in this work to be used for a boron-diffused N-type solar cell front side metallization. A front side fire-through contact (FTC) approach has been carried out for the formation of local contacts for a front surface passivated solar cell. With a low contact resistivity (ρc) of 1.0 mΩ·cm2, good ohmic contact between the boron-doped front surface of the silicon sample and the Al paste was realized. To obtain a good energy conversion efficiency, a balance can be achieved between the open circuit voltage (Voc) and contact resistivity (ρc) of the cell by combining suitable Al powders and appropriate additives. The detailed micro-contact difference in Si/metallization between the firing-through Al paste and silver-aluminum (Ag-Al) paste was analyzed. The dark saturation current density beneath the metal contact (J0, metal) of the Si/metallization region using our firing-through Al paste was discussed, which was proven to be 61% lower than using Ag-Al paste. The pseudo energy conversion efficiency of the cell using Al paste measured by Suns-VOC was also higher than using Ag-Al paste. The role of Al paste in low surface metal recombination is discussed. The utilization of this new kind of Al paste was much cheaper and more convenient, compared to the traditional process using Ag or Ag-Al paste.

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12

Killam, Alexander C., Joseph F. Karas, André Augusto, and Stuart G. Bowden. "Monitoring of Photovoltaic System Performance Using Outdoor Suns-VOC." Joule, December 2020. http://dx.doi.org/10.1016/j.joule.2020.11.007.

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13

Jung, Miga, Anthony Teal, Rhett Evans, Jae Sung Yun, Sergey Varlamov, and Martin A. Green. "Photoluminescence Characterization of Phosphorus Diffusion and Hydrogenation in Continuous Wave Diode Laser Crystallized Si Thin-Film on Glass." MRS Proceedings 1638 (2014). http://dx.doi.org/10.1557/opl.2014.382.

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ABSTRACTIn this paper, the effect of phosphorus diffusion and hydrogen passivation on the material properties of laser crystallised silicon on glass is investigated. Photoluminescence imaging, as well as Hall effect and Suns-Voc techniques are applied for the characterisation of laser crystallized silicon thin-film material properties. Hall effect as well as Suns-Voc measurements supports the photoluminescence imaging results; phosphorus diffusion and hydrogen passivation of laser crystallized films improves the overall material quality. Hydrogen passivation is more effective at improving the electronic properties of the laser crystallized films than phosphorus diffusion. Hydrogen passivated samples improved the photoluminescence intensity even further by a factor of 3. In addition, a correlation between photoluminescence intensity and open-circuit voltage is demonstrated: samples with highest photoluminescence intensity (1678 counts/s), gave the highest voltage (530 mV). Hall effect measurement shows a significant improvement in the bulk material, with carrier mobility increasing from 208 cm2/Vs to 488 cm2/Vs.

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14

France, Ryan M., and Myles A. Steiner. "High-Irradiance Degradation Studies of Metamorphic 1eV GaInAs Solar Cells." MRS Proceedings 1432 (2012). http://dx.doi.org/10.1557/opl.2012.1028.

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ABSTRACTInitial tests are performed regarding the degradation of lattice-mismatched GaInAs solar cells. 1eV metamorphic GaInAs solar cells with 1-2×106 cm-2 threading dislocation density in the active region are irradiated with an 808 nm laser for 2 weeks time under a variety of temperature and illumination conditions. All devices show a small degradation in Voc that is logarithmic with time. The absolute loss in performance after 2 weeks illuminated at 1300 suns equivalent and 125°C is 7 mV Voc and 0.2% efficiency, showing these devices to be relatively stable. The dark current increases with time and is analyzed with a two-diode model. A GaAs control cell degrades at the same rate, suggesting that the observed degradation mechanism is not related to the additional dislocations in the GaInAs devices.

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15

Liu, Kangping, Odile Cristini-Robbe, Omar Ibrahim Elmi, Shuang Long Wang, Bin Wei, Ingsong Yu, Xavier Portier, Fabrice Gourbilleau, Didier Stiévenard, and Tao Xu. "Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions." Nanoscale Research Letters 14, no. 1 (October 22, 2019). http://dx.doi.org/10.1186/s11671-019-3160-2.

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Abstract Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic layer deposition (ALD) technique. This paper aims at presenting correlated structural/electrical studies for the passivation effect of alumina on Si junctions to obtain optimal thickness of alumina passivation layer. High-resolution transmission electron microscope (HRTEM) observations coupled with energy dispersive X-ray (EDX) measurements are used to determine the thickness of alumina at atomic scale. The correlated electrical parameters are measured with both solar simulator and Sinton’s Suns-Voc measurements. Finally, an optimum alumina thickness of 1.2 nm is thus evidenced.

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