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Academic literature on the topic 'Substrate interface'
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Journal articles on the topic "Substrate interface"
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Abualigaledari, Sahar, Mehdi Salimi Jazi, and Fardad Azarmi. "Investigation on Fracture Toughness of Coating/Substrate Interface - Case Study: Thermally Sprayed Nickel Based Superalloy on Variety of Substrates." Materials Science Forum 900 (July 2017): 133–36. http://dx.doi.org/10.4028/www.scientific.net/msf.900.133.
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Nickel based superalloy materials have being extensively used in aerospace and other high tech industries. In the present work, the effect of different substrates on the mechanical properties of the coating-substrate interface has been studied. To this end, alloy 718, commercially known as Inconel 718, was deposited on alloy 718 and low carbon steel substrates using High Velocity Oxygen Fuel (HVOF) technique at the same condition. The bonding strength of the interfaces evaluated using Vickers indentation test on the coating-substrate interface. Hardness results were subjected to a valid empirical method to estimate the fracture toughness. Results illustrated that using the same material as coating and the substrate led to stronger interface bonding strength due to higher hardness, fracture toughness, and less crack propagation.
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Pal, Sunil K., Youngsuk Son, Theodorian Borca-Tasciuc, et al. "Thermal and electrical transport along MWCNT arrays grown on Inconel substrates." Journal of Materials Research 23, no. 8 (2008): 2099–105. http://dx.doi.org/10.1557/jmr.2008.0256.
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This work reports on thermal and electrical conductivities and interface resistances for transport along aligned multiwalled carbon nanotubes (CNT) films grown on a nickel superalloy (Inconel) substrate. The measured specific thermal resistance of the combined Inconel–CNT and indium–CNT interfaces is of the same order as reported for CNT and silicon or SiO2 interfaces but much higher than theoretical predictions considering perfect contact between the tubes and substrate. Imperfect mechanical contact with the substrate and a large contribution caused by indium–CNT interface are thought to be mainly responsible for the high interface resistances and the low effective values of thermal and electrical conductivities. However, reported results represent an incentive for further research on CNT synthesis on metallic substrates for thermal management applications and pave the way for much easier integration of carbon nanotubes in electronic applications.
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An, Bingbing. "Delamination of Stiff Films on Pressure Sensitive Ductile Substrates." International Journal of Applied Mechanics 11, no. 02 (2019): 1950014. http://dx.doi.org/10.1142/s1758825119500145.
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Stiff thin films supported by pressure sensitive ductile solids are an ubiquitous architecture appearing in a wide range of applications. The film rupture and delamination of films are important reliability issues of such an architecture. In this study, we investigate the synergistic effects of plastic deformation of substrates and fracture properties of film/substrate interface on the delamination of films. The focus of this study is on the interplay between the debonding of the interface and the plastic deformation of substrates. Finite deformation analyses are carried out for a stiff film deposited on a soft substrate with the substrate subjected to stretching. The fracture process of film/substrate interface is represented by a cohesive zone model, and the substrate is modeled as an elastic–plastic solid with pressure sensitive and plastically dilatant plastic flow. It is found that increasing the degree of pressure sensitivity of substrate can generate large plastic deformation, promoting crack tip blunting and thereby retarding delamination of film/substrate interface. Whereas, the increase in the degree of plastic dilatancy of substrate gives rise to the limited plastic deformation and leads to poor resistance to interface delamination. The strain hardening of substrate also affects the film/substrate debonding; the substrate with weakly post-yield strain hardening behavior contributes to enhanced resistance to interface delamination. It is further identified that the fracture properties of interface play an important role in activating plastic deformation of substrates. The film/substrate interface with high stiffness, large cohesive strength and high toughness enables the substrate to undergo significant plastic deformation, which suppresses the film/substrate delamination.
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Wang, Yun, Shihao Wang, Zhongping Que, et al. "Manipulating Nucleation Potency of Substrates by Interfacial Segregation: An Overview." Metals 12, no. 10 (2022): 1636. http://dx.doi.org/10.3390/met12101636.
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During solidification of metallic materials, heterogeneous nucleation occurs on substrates, either endogenous or exogenous. The potency of the substrates for nucleation is mainly dependent upon the atomic arrangements on the substrate surface, which are affected by the lattice misfit between the substrate and the nucleated solid, the surface roughness at atomic scale, and the chemical interaction between the substrates and the melt. Extensive examinations on metal/substrate (M/S) interfaces at atomic scale by the state-of-the-art aberration (Cs) corrected STEM and associated EDS and EELS have shown that alloying elements in liquid melts tend to segregate at the interfaces, leading to the formation of various 2-dimensional compounds (2DCs) or 2-dimensional solutions (2DSs), depending upon segregation behavior of the elements. For instance, Al3Ti 2DC and Ti2Zr 2DC at the Al/TiB2 interface, Y2O3 2DC at the Mg/MgO interface, and a Si-rich 2DS layer at Al-Si/TiB2 interface have been identified. Such interfacial segregations significantly affect nucleation potency of the substrates, resulting in either promoting or impeding the heterogeneous nucleation process during solidification. In this paper, we present an overview of the current studies of interfacial segregation behavior, the structure and chemistry of interfaces, and their impacts on the subsequent heterogeneous nucleation and grain initiation processes. Our focus is on the advances made in the understanding of the mechanisms for nucleation and grain refinement. It is demonstrated that it is feasible to manipulate heterogeneous nucleation by modifying nucleation potency of a substrate through deliberate interfacial segregation of desirable elements, achieving effective control of the grain structure of cast metallic materials.
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Li, Hui Qing, Cheng Ming Li, Guang Chao Chen, Fan Xiu Lu, and Yu Mei Tong. "Analysis of Interface between Free-Standing Diamond Films and Mo Substrates." Materials Science Forum 475-479 (January 2005): 3615–18. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.3615.
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Interfaces between Mo substrate and free-standing diamond films prepared by DC arc plasma jet operated at gas recycling mode were investigated, including for the first time used and multi-time used substrate. The morphology, phase composition and bonding state of elements in the interface between substrates and diamond films were examined by optical microscopy, XRD and XPS. The profiles of carbon concentration of Mo substrates were measured by GDOES. It showed that Mo2C and MoC were formed on the first time used Mo substrate, and MoC was found on diamond films nucleation side after detachment. It suggested that MoC was peeled off from Mo substrate. The stable Mo2C on Mo substrate was formed after multi-time use of Mo substrate. However, MoC has not been found on it. The thickness of carburizing layer on the first time used Mo substrate is up to 30µm, and the carburizing layer on the multi-time used substrate is much thicker than that on the first used. The amorphous carbon in the surface of the substrate and nucleation side of diamond films was found by XPS, including for the first time used and multi-time used substrate.
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Prasad, Beesabathina D., L. Salamanca-Riba, S. N. Mao, X. X. Xi, T. Venkatesan, and X. D. Wu. "Effect of substrate materials on laser deposited Nd1.85Ce0.15CuO4−y films." Journal of Materials Research 9, no. 6 (1994): 1376–83. http://dx.doi.org/10.1557/jmr.1994.1376.
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The growth morphology and interface structure of Nd1.85Ce0.15CuO4−y (NCCO) films grown by pulsed laser deposition on two different types of substrates, “perovskite” LaAlO3 (LAO) and SrTiO3 (STO) and “fluorite” Y2O3-stabilized ZrO2 (YSZ), were studied using cross-sectional electron microscopy. Structurally, the NCCO films are different when grown on the two types of substrates in three aspects: (i) epitaxy, (ii) substrate-film intermixing, and (iii) substrate-film interface roughness. In general, films deposited on “fluorite” substrates showed better superconducting properties than the films grown on “perovskite” substrates, especially for thinner films. Lattice mismatch considerations are not sufficient to explain the observed differences since films grown on the YSZ substrate showed sharp substrate-film interface in spite of their large lattice misfit. The atomic arrangements at the interface were analyzed in terms of electrostatic energy (charge balance) and matching of the oxygen sublattices in order to account for the experimental results.
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Kis-Varga, Miklos, G. A. Langer, A. Csik, Z. Erdélyi, and Dezső L. Beke. "Effect of Substrate Temperature on the Different Diffuseness of Subsequent Interfaces in Binary Multilayers." Defect and Diffusion Forum 277 (April 2008): 27–31. http://dx.doi.org/10.4028/www.scientific.net/ddf.277.27.
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Epitaxial, coherent Mo/V multilayers were deposited by magnetron sputtering on (001) oriented MgO substrates at 873K (sample MoV-T), 923K (sample MoV-U) and 973K (sample MoV-V), respectively. In order to estimate the concentration profiles in our multilayers, a superlattice refinement modelling procedure has been used on high-angle XRD symmetric scans. The Mo/V interfaces were always sharper than V/Mo ones (in this notation the order of element reflects the sequence of deposition: e.g. the Mo/V interface was formed by the deposition of the V on the Mo surface). Furthermore the interface diffuseness was only slightly different at the lowest substrate temperature, but the difference increased with increasing temperature and an abrupt concentration jump could be observed at the Mo/V interface in the sample, sputtered at the 973 K. This indicates that during deposition the interfacial mixing by impact exchange events is important and thermally activated processes (surface diffusion and/or jumps driven by segregation) are less effective. With increasing substrate temperature the thickness of the V/Mo interfaces were unchanged while the Mo/V interface became shaper and sharper i.e. thermally activated jumps were more active during deposition of V atoms. Thus in forming Mo/V interfaces the segregation tendency of V to the Mo surface results in enhanced exchanges between V atoms (buried in the near surface layers of the Mo substrate) and surface Mo atoms, leading to more sharper interface with increasing temperature. On the other hand during the formation of the V/Mo interfaces the chemical thickness of the interface, provided again by impact exchanges, was practically unchanged.
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ZHAO, HONG-PING, YECHENG WANG, BING-WEI LI, and XI-QIAO FENG. "IMPROVEMENT OF THE PEELING STRENGTH OF THIN FILMS BY A BIOINSPIRED HIERARCHICAL INTERFACE." International Journal of Applied Mechanics 05, no. 02 (2013): 1350012. http://dx.doi.org/10.1142/s1758825113500129.
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The peeling behavior of a thin film bonded to a substrate is investigated by using the cohesive interface model. We compare the peeling processes of film/substrate interfaces with three different geometric shapes, including a flat interface, a curved interface of sinusoidal shape, and a wavy interface with two-level sinusoidal hierarchy. The effect of the peeling angle on the maximal peeling strength is also examined. It is demonstrated that the peeling strength can be significantly improved by introducing a hierarchical wavy morphology at the film/substrate interface. This study may be helpful for the design of film/substrate systems with enhanced mechanical properties.
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Song, Zhuguo, and Hui Li. "Plasma Spraying with Wire Feeding: A Facile Route to Enhance the Coating/Substrate Interfacial Metallurgical Bonding." Coatings 12, no. 5 (2022): 615. http://dx.doi.org/10.3390/coatings12050615.
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Thermal spray coatings are widely used in many applications, and the adhesion effect at the coating/substrate interface plays an important role during the service life. The thermal spraying coating and substrate is primarily combined by a mechanical seizure effect. In this work, a strategy to generate interfacial metallurgical bonding is proposed. Plasma spraying with wire feeding was adopted to increase the size of sprayed particles, and metallurgical bonding was clearly formed between deposited particles and the substrate (304 stainless-steel and 7075 aluminum alloy). Interface reaction can be found at both NiAl/7075 and NiAl/304 interfaces. Typical Al-Al3Ni eutectic phase with higher microhardness was formed at NiAl/7075 interface. The adhesive strength of the coatings was significantly improved to 82.67 ± 3.96 MPa and 64.45 ± 2.84 MPa, respectively, for NiAl coating on 304 and 7075 substrates through tensile adhesion tests (TAT) without surface roughening pretreatment. This technique shows a promising aspect of the application of thermal spray coatings.
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Yamagiwa, K., K. Matsumoto, and I. Hirabayashi. "Solid-phase epitaxial growth of oxide buffer materials for Rba2Cu3O7−y(R: rare earth and Y) superconductor." Journal of Materials Research 15, no. 11 (2000): 2547–57. http://dx.doi.org/10.1557/jmr.2000.0365.
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We prepared various oxide buffer films on single-crystalline oxide substrates using chemical solution deposition to investigate general interfacial problems of buffer layers for coated conductors, such as epitaxial relationships between buffer material and the substrate. We found that (i) interfaces between the films and the substrates having the same crystal structure were compatible, even in a range of misfit value up to 7%, showing in-plane alignment; however (ii) interfaces between the films and substrates of other combinations of interface structures, with and without occupying tetragonal sites, narrow the range of the epitaxial growth. The former results (i) can be explained by the arrangement of oxygen ions, but for the latter cases (ii), cation arrangement is also important in forming a compatible interface as well as an anion arrangement. The general tendency is largely explained by the ionic arrangement at the interface. The interface structure becomes unstable by the electrostatic repulsive force since the distance between cations at the interface becomes shorter than that in each original crystal structure.