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Journal articles on the topic 'STT-MTJ'

Author: Grafiati

Published: 1 March 2025

Last updated: 31 July 2025

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1

Jangra, Payal, and Manoj Duhan. "Design and analysis of Voltage-Gated Spin-Orbit Torque (VgSOT) Magnetic Tunnel Junction based Non-Volatile Flip Flop design for Low Energy Applications." Journal of Integrated Circuits and Systems 19, no. 1 (2024): 1–12. http://dx.doi.org/10.29292/jics.v19i1.743.

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In this paper, a Voltage-gated Spin-Orbit Torque based non-volatile flip-flop design has been discussed. Theflip-flop consists of a conventional CMOS master latch used in normal operations, and a VgSOT-MTJ basedslave latch has been considered for interim data saving during power-gating. The current circuit uses the samewrite current to write data into two magnetic tunnel junctions, saving 50% of storing energy. The proposedNVFF circuit has been simulated using Cadence Virtuoso 45nm. The performance parameters like energyconsumption and delay during restore and store operations of VgSOT-MTJ bas

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2

Bu, Kai, Hai Jun Liu, Hui Xu, and Zhao Lin Sun. "Large Capacity Cache Design Based on Emerging Non-Volatile Memory." Applied Mechanics and Materials 513-517 (February 2014): 918–21. http://dx.doi.org/10.4028/www.scientific.net/amm.513-517.918.

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A triple-level-cell (TLC) STT-RAM architecture was proposed basing on parallel MLC MTJ and serial MLC MTJ. A TLC STT-RAM cell can store three bit which will offer higher capacity density compared with SLC STT-RAM. The write process is also analyzed that it contains three types of basic states transitions. Through mapping soft, medium and hard domains to three individual cache lines, the access to soft lines can perform as accessing SLC STT-RAM-based cache. The amount of three-step operations is also much reduced. .

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3

Rao, Dr G. Anantha, and Gopi Kommuju. "A NOVEL LOW POWER ALU DESIGNED BY USING HYBRID STT-MTJ/CMOS CIRCUIT." INTERANTIONAL JOURNAL OF SCIENTIFIC RESEARCH IN ENGINEERING AND MANAGEMENT 07, no. 12 (2023): 1–13. http://dx.doi.org/10.55041/ijsrem27641.

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The rise in power dissipation when the technology descends into the deep submicron zone is one of the main issues for CMOS technology due to its non-volatility, high speed, high endurance, CMOS compatibility, and primarily the low power dissipation. magnetic tunnel junction (MTJ) working on Spin transfer torque (STT). Switching mechanism is recognized as one of the most promising spintronic devices for post-CMOS era. This device can provide solutions for the issues posed by existing CMOS technology. We have put out a brand-new hybrid STT- MTJ/CMOS circuit-based logic-in-memory (LIM) P- magneti

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4

Tankwal, Piyush, Vikas Nehra, Sanjay Prajapati, and Brajesh Kumar Kaushik. "Performance analysis of differential spin hall effect (DSHE)-MRAM-based logic gates." Circuit World 45, no. 4 (2019): 300–310. http://dx.doi.org/10.1108/cw-04-2019-0036.

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Purpose The purpose of this paper is to analyze and compare the characteristics of hybrid conventional complementary metal oxide semiconductor/magnetic tunnel junction (CMOS/MTJ) logic gates based on spin transfer torque (STT) and differential spin Hall effect (DSHE) magnetic random access memory (MRAM). Design/methodology/approach Spintronics technology can be used as an alternative to CMOS technology as it is having comparatively low power dissipation, non-volatility, high density and high endurance. MTJ is the basic spin based device that stores data in form of electron spin instead of char

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5

Vatajelu, Elena Ioana, and Giorgio Di Natale. "High-Entropy STT-MTJ-Based TRNG." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 27, no. 2 (2019): 491–95. http://dx.doi.org/10.1109/tvlsi.2018.2879439.

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6

Xu, Zihan, Chengen Yang, Manqing Mao, Ketul B. Sutaria, Chaitali Chakrabarti, and Yu Cao. "Compact modeling of STT-MTJ devices." Solid-State Electronics 102 (December 2014): 76–81. http://dx.doi.org/10.1016/j.sse.2014.06.003.

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7

Chiou, Kuan-Ru, Jenq-Wei Chen, and Son-Hsien Chen. "Spin-Transfer Torques in One-Dimensional Magnetic Tunneling Junctions of Lateral Structures." SPIN 09, no. 01 (2019): 1950003. http://dx.doi.org/10.1142/s2010324719500036.

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Recent study in [C. C. Lin, Y. F. Gao, A. V. Penumatcha, V. Q. Diep, J. Appenzeller and Z. H. Chen, Acs Nano 8, 3807 (2014)], showed that the spin-transfer torque (STT) is enhanced by the asymmetry in a graphene lateral spin-valve structure. This lateral structure or geometry can be modeled by a four-terminal magnetic tunneling junction (MTJ) as opposite to the conventional two-terminal MTJ. In this paper, using the nonequilibrium Green’s function formalism (NEGF), we compare the anti-damping components of the STT in a similar nonconventional lateral one-dimensional MTJ with that in the conven

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8

Barla, Prashanth, Hemalatha Shivarama, Ganesan Deepa, and Ujjwal Ujjwal. "Design and Assessment of Hybrid MTJ/CMOS Circuits for In-Memory-Computation." Journal of Low Power Electronics and Applications 14, no. 1 (2024): 3. http://dx.doi.org/10.3390/jlpea14010003.

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Hybrid magnetic tunnel junction/complementary metal oxide semiconductor (MTJ/CMOS) circuits based on in-memory-computation (IMC) architecture is considered as the next-generation candidate for the digital integrated circuits. However, the energy consumption during the MTJ write process is a matter of concern in these hybrid circuits. In this regard, we have developed a novel write circuit for the contemporary three-terminal perpendicular-MTJs that works on the voltage-gated spin orbit torque (VG+SOT) switching mechanism to store the information in hybrid circuits for IMC architecture. Investig

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9

Pushp, Aakash, Timothy Phung, Charles Rettner, Brian P. Hughes, See-Hun Yang, and Stuart S. P. Parkin. "Giant thermal spin-torque–assisted magnetic tunnel junction switching." Proceedings of the National Academy of Sciences 112, no. 21 (2015): 6585–90. http://dx.doi.org/10.1073/pnas.1507084112.

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Spin-polarized charge currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer torque (STT). Recently, by taking advantage of the spin-dependent thermoelectric properties of magnetic materials, novel means of generating spin currents from temperature gradients, and their associated thermal-spin torques (TSTs), have been proposed, but so far these TSTs have not been large enough to influence MTJ switching. Here we demonstrate significant TSTs in MTJs by generating large temperature gradients across ultrathin MgO tunnel barriers that considerably affect the switching f

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10

Sugii, Toshihiro, Yoshihisa Iba, Masaki Aoki, et al. "Integration of STT-MRAMs for Embedded Cache Memories." Advances in Science and Technology 95 (October 2014): 146–49. http://dx.doi.org/10.4028/www.scientific.net/ast.95.146.

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We report the current status of our development of spin-transfer torque magnetic RAMs (STT-MRAMs) and their integration with the back-end-of-line (BEOL) process to replace conventional embedded SRAM cache memories. Our MRAM technology features a top-pinned, perpendicular magnetic tunnel junction (MTJ) and a highly reliable MTJ for a cache memory. We could obtain a higher density cache memory than that with conventional SRAMs with our STT-MRAMs, and leakage free characteristics, as well as unlimited write and read cycling times and 10-year time-dependent dielectric breakdown (TDDB) characterist

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11

ZHANG, YAOJUN, WUJIE WEN, and YIRAN CHEN. "STT-RAM CELL DESIGN CONSIDERING MTJ ASYMMETRIC SWITCHING." SPIN 02, no. 03 (2012): 1240007. http://dx.doi.org/10.1142/s2010324712400073.

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As one promising candidate for next-generation nonvolatile memory technologies, spin-transfer torque random access memory (STT-RAM) has demonstrated many attractive features, such as nanosecond access time, high integration density, nonvolatility, and good CMOS process compatibility. In this paper, we address the asymmetry in the write operations of STT-RAM cells: the mean and the deviation of the write latency for the switching from low- to high-resistance state is much longer or larger than that of the opposite direction. Some special design concerns, e.g., the data-dependent write reliabili

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12

Zhang, Shubin, Peifang Dai, Ning Li, and Yanbo Chen. "A Radiation-hardened Triple Modular Redundancy Design Based on Spin-Transfer Torque Magnetic Tunnel Junction Devices." Applied Sciences 14, no. 3 (2024): 1229. http://dx.doi.org/10.3390/app14031229.

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Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows promising properties, such as non-volatility, speed, and unlimited endurance. One of the important merits of STT-MRAM is its radiation hardness, thanks to its core component, a magnetic tunnel junction (MTJ), being capable of good function in an irradiated environment. This property makes MRAM attractive for space and nuclear technology applications.

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13

Lim, Hyein, Seungjun Lee, and Hyungsoon Shin. "A Survey on the Modeling of Magnetic Tunnel Junctions for Circuit Simulation." Active and Passive Electronic Components 2016 (2016): 1–12. http://dx.doi.org/10.1155/2016/3858621.

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Spin-transfer torque-based magnetoresistive random access memory (STT-MRAM) is a promising candidate for universal memory that may replace traditional memory forms. It is expected to provide high-speed operation, scalability, low-power dissipation, and high endurance. MRAM switching technology has evolved from the field-induced magnetic switching (FIMS) technique to the spin-transfer torque (STT) switching technique. Additionally, material technology that induces perpendicular magnetic anisotropy (PMA) facilitates low-power operation through the reduction of the switching current density. In t

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14

Sun, Zhenyu, Xiuyuan Bi, Hai Li, Weng-Fai Wong, and Xiaochun Zhu. "STT-RAM Cache Hierarchy With Multiretention MTJ Designs." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 22, no. 6 (2014): 1281–93. http://dx.doi.org/10.1109/tvlsi.2013.2267754.

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15

Monga, Kanika, Nitin Chaturvedi, and S. Gurunarayanan. "Energy-efficient data retention in D flip-flops using STT-MTJ." Circuit World 46, no. 4 (2020): 229–41. http://dx.doi.org/10.1108/cw-09-2018-0073.

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Purpose Emerging event-driven applications such as the internet-of-things requires an ultra-low power operation to prolong battery life. Shutting down non-functional block during standby mode is an efficient way to save power. However, it results in a loss of system state, and a considerable amount of energy is required to restore the system state. Conventional state retentive flip-flops have an “Always ON” circuitry, which results in large leakage power consumption, especially during long standby periods. Therefore, this paper aims to explore the emerging non-volatile memory element spin tran

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16

Garzón, C. Esteban J., Marco Lanuzza, Adam Teman, and Leonid Yavits. "AM4: MRAM Crossbar Based CAM/TCAM/ACAM/AP for In-Memory Computing." IEEE Journal on Emerging and Selected Topics in Circuits and Systems 13, no. 1 (2023): 408–21. https://doi.org/10.5281/zenodo.8087076.

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In-memory computing seeks to minimize data movement and alleviate the memory wall by computing in-situ, in the same place that the data is located. One of the key emerging technologies that promises to enable such computing-in-memory is spin-transfer torque magnetic tunnel junction (STT-MTJ). This paper proposes AM4, a combined STT-MTJ-based Content Addressable Memory (CAM), Ternary CAM (TCAM), approximate matching (similarity search) CAM (ACAM), and in-memory Associative Processor (AP) design, inspired by the recently announced Samsung MRAM crossbar. We demonstrate and evaluate the performanc

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17

Useinov, Niazbeck. "Tunnel magnetoresistance and spin transfer torque in magnetic tunnel junction with embedded nanoparticles." EPJ Web of Conferences 185 (2018): 01015. http://dx.doi.org/10.1051/epjconf/201818501015.

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The theoretical model of spin-dependent transport in magnetic tunnel junctions (MTJ) containing magnetic or non-magnetic nanoparticle is developed. The dependences of tunnel magnetoresistance (TMR) and in-plane component of spin transfer torque (STT) on the applied voltage for various sizes of nanoparticles of the order of the mean free path of the conduction electron are calculated. The calculation is performed in the approximation of the ballistic transport of conduction electrons through the insulating layers of the MTJ and the nanoparticles.

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18

Long, Jingwei, Qi Hu, Zhengping Yuan, et al. "Comparative Study of Temperature Impact in Spin-Torque Switched Perpendicular and Easy-Cone MTJs." Nanomaterials 13, no. 2 (2023): 337. http://dx.doi.org/10.3390/nano13020337.

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The writing performance of the easy-cone magnetic tunnel junction (MTJ) and perpendicularly magnetized MTJ (pMTJ) under various temperatures was investigated based on the macrospin model. When the temperature is changed from 273 K to 373 K, the switching current density of the pMTJ changes by 56%, whereas this value is only 8% in the easy-cone MTJ. Similarly, the temperature-induced variation of the switching delay is more significant in the pMTJ. This indicates that the easy-cone MTJ has a more stable writing performance under temperature variations, resulting in a wider operating temperature

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19

Bromberg, David M., Daniel H. Morris, Larry Pileggi, and Jian-Gang Zhu. "Novel STT-MTJ Device Enabling All-Metallic Logic Circuits." IEEE Transactions on Magnetics 48, no. 11 (2012): 3215–18. http://dx.doi.org/10.1109/tmag.2012.2197186.

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20

Zhang, Yaojun, Xiaobin Wang, Hai Li, and Yiran Chen. "STT-RAM Cell Optimization Considering MTJ and CMOS Variations." IEEE Transactions on Magnetics 47, no. 10 (2011): 2962–65. http://dx.doi.org/10.1109/tmag.2011.2158810.

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21

Wei, Jiaqi, Kaihua Cao, Hushan Cui, et al. "All Perpendicular Spin Nano-Oscillators with Composite Free Layer." SPIN 09, no. 03 (2019): 1940010. http://dx.doi.org/10.1142/s2010324719400101.

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Owing to improved thermal stability and scalability, materials with perpendicular magnetic anisotropy (PMA) are extremely attractive. The all perpendicular magnetic tunnel junction ([Formula: see text]-MTJ) devices are primarily devoted to spin transfer torque (STT)-induced switching and few works report their microwave emission. Here, we demonstrate the basic results of RF function in nanoscale [Formula: see text]-MTJ which has two different thickness free layers separated by atom-thick tungsten insertion. The ultrathin W spacer layer not only enables the two CoFeB free layers precess as a si

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22

Prakash, D. Venkata, Anjaiah Talamala, Mahesh K. Singh, and Y. Kuntam Yamini Devi. "Non-Volatile Logic Design Considerations for Energy Efficient Tolerant Variation." International Journal of Electrical and Electronics Research 10, no. 4 (2022): 868–71. http://dx.doi.org/10.37391/ijeer.100419.

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Systems design for the non-volatile application must work on less energy or power. The spin-transfer torque-magnetic tunnel junction (STT-MTJ) devices added to the flip-flops which are regarded as non-volatile storage devices. Those are addresses to save the energy of that system stated by the nonvolatile logic. The changes during the production of STT-MTJ and CMOS transistors decrease the yield, which leads to overdesign as well as more energy consumption. The total processes of driver circuitry design for the tradeoffs for backup and restore performance. A new method called the novel method

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23

Nisar, Arshid, Seema Dhull, Brajesh Kumar Kaushik, and Sparsh Mittal. "High-performance voltage controlled multilevel MRAM cell." Semiconductor Science and Technology 36, no. 12 (2021): 125013. http://dx.doi.org/10.1088/1361-6641/ac3187.

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Abstract In the recent past, spin-transfer torque (STT) and spin-orbit torque (SOT) based magnetic random access memories (MRAMs) have been studied for future energy efficient and non-volatile memory applications. Multilevel cell (MLC) design has emerged as one of the promising solutions to enhance the storage density of these MRAMs. However, the conventional MLC design adds a larger magnetic tunnel junction (MTJ) stack that makes it difficult to maintain low switching current and high speed. Moreover, it becomes very difficult to reduce the driver transistor size. This paper describes the app

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24

Garzón, Esteban, Marco Lanuzza, Ramiro Taco, and Sebastiano Strangio. "Ultralow Voltage FinFET- Versus TFET-Based STT-MRAM Cells for IoT Applications." Electronics 10, no. 15 (2021): 1756. http://dx.doi.org/10.3390/electronics10151756.

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Spin-transfer torque magnetic tunnel junction (STT-MTJ) based on double-barrier magnetic tunnel junction (DMTJ) has shown promising characteristics to define low-power non-volatile memories. This, along with the combination of tunnel FET (TFET) technology, could enable the design of ultralow-power/ultralow-energy STT magnetic RAMs (STT-MRAMs) for future Internet of Things (IoT) applications. This paper presents the comparison between FinFET- and TFET-based STT-MRAM bitcells operating at ultralow voltages. Our study is performed at the bitcell level by considering a DMTJ with two reference laye

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25

Wang, Manman, and Yanfeng Jiang. "Compact model of nanometer STT-MTJ device with scale effect." AIP Advances 11, no. 2 (2021): 025201. http://dx.doi.org/10.1063/9.0000049.

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26

Bi, Xiuyuan, Hai Li, and Xiaobin Wang. "STT-RAM Cell Design Considering CMOS and MTJ Temperature Dependence." IEEE Transactions on Magnetics 48, no. 11 (2012): 3821–24. http://dx.doi.org/10.1109/tmag.2012.2200469.

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27

Park, Jaeyoung. "Hybrid Non-Volatile Flip-Flops Using Spin-Orbit-Torque (SOT) Magnetic Tunnel Junction Devices for High Integration and Low Energy Power-Gating Applications." Electronics 9, no. 9 (2020): 1406. http://dx.doi.org/10.3390/electronics9091406.

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This paper presents two novel hybrid non-volatile flip-flops (NVFFs) comprised of the conventional CMOS flip-flop for static storage in normal operations and Spin-Orbit-Torque Magnetic Tunnel Junction (SOT-MTJ) devices for temporary storage during power gating. The proposed NVFFs re-utilize a part of the standard CMOS flip-flop infrastructure for storing and restoring data onto MTJs for reducing the area. Furthermore, the proposed NVFFs re-use a write current, which is used for storing an MTJ, to write the other MTJ at a time, resulting in 50% storing energy reduction. To reduce the area furth

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28

Liang, Yu-Pei, Shuo-Han Chen, Yuan-Hao Chang, Yun-Fei Liu, Hsin-Wen Wei, and Wei-Kuan Shih. "A cache consolidation design of MLC STT-RAM for energy efficiency enhancement on cyber-physical systems." ACM SIGAPP Applied Computing Review 21, no. 1 (2021): 37–49. http://dx.doi.org/10.1145/3477133.3477136.

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Owing to the energy-constraint nature of cyber-physical systems (CPS), energy efficiency has become a primary design consideration for CPS. On CPS, owing to the high leakage power issue of SRAM, the major portion of its energy consumption comes from static random-access memory (SRAM)-based processors. Recently, with the emerging and rapidly evolving nonvolatile Spin-Transfer Torque RAM (STT-RAM), STT-RAM is expected to replace SRAM within processors for enhancing the energy efficiency with its near-zero leakage power features. The advances in Magnetic Tunneling Junction (MTJ) technology also r

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29

Hong, Yunshu, Yiyu Pan, and Zhongfu Xu. "Based on the comparison with other kinds of storage devices to predict the future development of STT-MRAM." Highlights in Science, Engineering and Technology 46 (April 25, 2023): 197–204. http://dx.doi.org/10.54097/hset.v46i.7704.

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Now day with the development of technology, our electronic device is upgraded. Which will bring more data to storage. This causes the development of memory device. Now we already have SRAM flash memory are being widely used. But as the we use it for long time, the disadvantage of these memory device is shown, therefore, a new memory device --STT-MRAM are been created, which is we are going to introduce, we will show you how it basic structure which is MRAM work and the mechanism of the magnetic tunnel junction (the part it storage messages) and how spin electron influence the MTJ to make it mo

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30

Sanchez Hazen, D., B. M. S. Teixeira, D. Salomoni, et al. "Real time investigation of double magnetic tunnel junction with a switchable assistance layer for high efficiency STT-MRAM." APL Materials 10, no. 3 (2022): 031104. http://dx.doi.org/10.1063/5.0080335.

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This work reports experimental confirmation of the working principles of a double magnetic tunnel junction (DMTJ) to achieve highly efficient spin-transfer-torque (STT) switching. This concept uses a magnetically switchable assistance layer (ASL) acting as a top perpendicular spin polarizer. The STT-induced switching dynamics were described by macrospin simulations, while the magnetic and electrical properties of the devices were investigated in switching experiments. The reversal dynamics of the storage layer/ASL coupled system were validated by time-resolved measurements of the device resist

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31

Deng, Erya, Wang Kang, Yue Zhang, Jacques-Olivier Klein, Claude Chappert, and Weisheng Zhao. "Design Optimization and Analysis of Multicontext STT-MTJ/CMOS Logic Circuits." IEEE Transactions on Nanotechnology 14, no. 1 (2015): 169–77. http://dx.doi.org/10.1109/tnano.2014.2375205.

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32

Wang, Manman, Yuhai Yuan, and Yanfeng Jiang. "Realization of Artificial Neurons and Synapses Based on STDP Designed by an MTJ Device." Micromachines 14, no. 10 (2023): 1820. http://dx.doi.org/10.3390/mi14101820.

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As the third-generation neural network, the spiking neural network (SNN) has become one of the most promising neuromorphic computing paradigms to mimic brain neural networks over the past decade. The SNN shows many advantages in performing classification and recognition tasks in the artificial intelligence field. In the SNN, the communication between the pre-synapse neuron (PRE) and the post-synapse neuron (POST) is conducted by the synapse. The corresponding synaptic weights are dependent on both the spiking patterns of the PRE and the POST, which are updated by spike-timing-dependent plastic

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Lim, Hyein, Sora Ahn, Miryeon Kim, Seungjun Lee, and Hyungsoon Shin. "A New Circuit Model for Spin-Torque Oscillator Including Perpendicular Torque of Magnetic Tunnel Junction." Advances in Condensed Matter Physics 2013 (2013): 1–6. http://dx.doi.org/10.1155/2013/169312.

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Spin-torque oscillator (STO) is a promising new technology for the future RF oscillators, which is based on the spin-transfer torque (STT) effect in magnetic multilayered nanostructure. It is expected to provide a larger tunability, smaller size, lower power consumption, and higher level of integration than the semiconductor-based oscillators. In our previous work, a circuit-level model of the giant magnetoresistance (GMR) STO was proposed. In this paper, we present a physics-based circuit-level model of the magnetic tunnel junction (MTJ)-based STO. MTJ-STO model includes the effect of perpend

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Choi, Gwang Hui, and Taehui Na. "Analysis of State-of-the-Art Spin-Transfer-Torque Nonvolatile Flip-Flops Considering Restore Yield in the Near/Sub-Threshold Voltage Region." Electronics 9, no. 12 (2020): 2118. http://dx.doi.org/10.3390/electronics9122118.

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Recently, the leakage power consumption of Internet of Things (IoT) devices has become a main issue to be tackled, due to the fact that the scaling of process technology increases the leakage current in the IoT devices having limited battery capacity, resulting in the reduction of battery lifetime. The most effective method to extend the battery lifetime is to shut-off the device during standby mode. For this reason, spin-transfer-torque magnetic-tunnel-junction (STT-MTJ) based nonvolatile flip-flop (NVFF) is being considered as a strong candidate to store the computing data. Since there is a

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35

De Rose, Raffaele, Tommaso Zanotti, Francesco Maria Puglisi, Felice Crupi, Paolo Pavan, and Marco Lanuzza. "STT-MTJ Based Smart Implication for Energy-Efficient Logic-in-Memory Computing." Solid-State Electronics 184 (October 2021): 108065. http://dx.doi.org/10.1016/j.sse.2021.108065.

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36

Tripathi, Sandeep, Sudhanshu Choudhary, and Prasanna Kumar Misra. "A Novel STT–SOT MTJ-Based Nonvolatile SRAM for Power Gating Applications." IEEE Transactions on Electron Devices 69, no. 3 (2022): 1058–64. http://dx.doi.org/10.1109/ted.2022.3140407.

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37

Perach, Ben, and shahar kvatinsky. "An Asynchronous and Low-Power True Random Number Generator Using STT-MTJ." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 27, no. 11 (2019): 2473–84. http://dx.doi.org/10.1109/tvlsi.2019.2927816.

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38

Pathak, Sachin, Jongin Cha, Kangwook Jo, Hongil Yoon, and Jongill Hong. "Fast and efficient STT switching in MTJ using additional transient pulse current." Applied Physics Letters 110, no. 23 (2017): 232401. http://dx.doi.org/10.1063/1.4985129.

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39

Garg, Jyoti, and Subodh Wariya. "Design of Low Power Arithmetic logic unit using SHE assisted STT / MTJ." International Journal of Computing and Digital Systems 14, no. 1 (2023): 107–15. http://dx.doi.org/10.12785/ijcds/140110.

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40

Wasef, Shaik, and Hossein Fariborzi. "Theoretical Study of Field-Free Switching in PMA-MTJ Using Combined Injection of STT and SOT Currents." Micromachines 12, no. 11 (2021): 1345. http://dx.doi.org/10.3390/mi12111345.

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Field-free switching in perpendicular magnetic tunnel junctions (P-MTJs) can be achieved by combined injection of spin-transfer torque (STT) and spin-orbit torque (SOT) currents. In this paper, we derived the relationship between the STT and SOT critical current densities under combined injection. We included the damping–like torque (DLT) and field-like torque (FLT) components of both the STT and SOT. The results were derived when the ratio of the FLT to the DLT component of the SOT was positive. We observed that the relationship between the critical SOT and STT current densities depended on t

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41

Polley, Debanjan, Akshay Pattabi, Jyotirmoy Chatterjee, et al. "Progress toward picosecond on-chip magnetic memory." Applied Physics Letters 120, no. 14 (2022): 140501. http://dx.doi.org/10.1063/5.0083897.

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We offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spint

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Zeng, Dinggui, Fantao Meng, Ruofei Chen, et al. "Achieving over 95% yield of sub-1 ppm BER with retention over 10 years at 125 °C and endurance of 1 × 10¹² cycles towards automotive non-volatile RAM applications." Journal of Semiconductors 46, no. 3 (2025): 032301. https://doi.org/10.1088/1674-4926/24090037.

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Abstract Magnetic tunnel junction (MTJ) based spin transfer torque magnetic random access memory (STT-MRAM) has been gaining tremendous momentum in high performance microcontroller (MCU) applications. As eFlash-replacement type MRAM approaches mass production, there is an increasing demand for non-volatile RAM (nvRAM) technologies that offer fast write speed and high endurance. In this work, we demonstrate highly reliable 4 Mb nvRAM type MRAM suitable for industry and auto grade-1 applications. This nvRAM features retention over 10 years at 125 °C, endurance of 1 × 1012 cycles with 20 ns write

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Barla, Prashanth, Vinod Kumar Joshi, and Somashekara Bhat. "A Novel Auto-Write-Stopping Circuit for SHE + STT-MTJ/CMOS Hybrid ALU." IEEE Transactions on Electron Devices 69, no. 4 (2022): 1683–90. http://dx.doi.org/10.1109/ted.2022.3145331.

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Pan, Guangchen, Ali Karymy, Pingping Yu, and Yanfeng Jiang. "Novel Low Noise Amplifier for Neural Signals Based on STT-MTJ Spintronic Device." IEEE Access 7 (2019): 145641–50. http://dx.doi.org/10.1109/access.2019.2945036.

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DAS, JAYITA, SYED M. ALAM, and SANJUKTA BHANJA. "RECENT TRENDS IN SPINTRONICS-BASED NANOMAGNETIC LOGIC." SPIN 04, no. 03 (2014): 1450004. http://dx.doi.org/10.1142/s2010324714500040.

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With the growing concerns of standby power in sub-100-nm CMOS technologies, alternative computing techniques and memory technologies are explored. Spin transfer torque magnetoresistive RAM (STT-MRAM) is one such nonvolatile memory relying on magnetic tunnel junctions (MTJs) to store information. It uses spin transfer torque to write information and magnetoresistance to read information. In 2012, Everspin Technologies, Inc. commercialized the first 64Mbit Spin Torque MRAM. On the computing end, nanomagnetic logic (NML) is a promising technique with zero leakage and high data retention. In 2000,

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Zhang, Li, Hualian Tang, Beilei Xu, Yiqi Zhuang, and Junlin Bao. "A High Reliability Sense Amplifier for Computing In-Memory with STT-MRAM." SPIN 10, no. 02 (2020): 2040001. http://dx.doi.org/10.1142/s2010324720400019.

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In the era of big data, massive data requires processing efficiently. However, the limited data bandwidth between the memory and the processor in conventional computer systems could not meet the requirement of data transferring. Computing in-memory has been considered an effective solution to address this problem. In this paper, based on the spin transfer torque-magnetic random access memory (STT-MRAM), a computing in-memory architecture with as few peripheral circuits as possible is proposed. This computing in-memory architecture gives the specific reference cell so that two rows in one array

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Garzón, Esteban, Raffaele De Rose, Felice Crupi, Lionel Trojman, Adam Teman, and Marco Lanuzza. "Adjusting thermal stability in double-barrier MTJ for energy improvement in cryogenic STT-MRAMs." Solid-State Electronics 194 (August 2022): 108315. http://dx.doi.org/10.1016/j.sse.2022.108315.

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Sun, Hongbin, Chuanyin Liu, Tai Min, Nanning Zheng, and Tong Zhang. "Architectural Exploration to Enable Sufficient MTJ Device Write Margin for STT-RAM Based Cache." IEEE Transactions on Magnetics 48, no. 8 (2012): 2346–51. http://dx.doi.org/10.1109/tmag.2012.2193589.

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Harnsoongnoen, Supakorn, N. Phaengpha, S. Ritjaroenwattu, U. Charoen-In, and Apirat Siritaratiwat. "Joule Heating and Peltier Effects in Thermoelectric Spin-Transfer Torque Mram Devices Using Finite Element Modeling." Advanced Materials Research 931-932 (May 2014): 989–93. http://dx.doi.org/10.4028/www.scientific.net/amr.931-932.989.

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This paper reports the Joule heating and Peltier effects in thermoelectric spin-transfer torque MRAMs (TSTT-MRAMs). The simulation was undertaken based on the current-induced magnetization switching at the MgO/CoFe magnetic tunnel junction. Thermal and heat flux distributions of the TSTT-MRAM cells were simulated and analyzed using finite-element modeling. The Joule heating and Peltier effects lead to the increases in the temperature and heat flux distributions at the magnetic tunnel junction (MTJ) as well as the thermoelectric module. The maximum temperature of Peltier effect is higher than J

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Pak, Murat, Wesley Zanders, Patrick Wong, and Sandip Halder. "Screening of 193i and EUV lithography process options for STT-MRAM orthogonal array MTJ pillars." Micro and Nano Engineering 10 (April 2021): 100082. http://dx.doi.org/10.1016/j.mne.2021.100082.

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