Relevant bibliographies by topics / Stochastic Magnetic Tunnel Junctions

Academic literature on the topic 'Stochastic Magnetic Tunnel Junctions'

Author: Grafiati
Published: 10 December 2022
Last updated: 28 January 2023

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Contents

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Stochastic Magnetic Tunnel Junctions.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Stochastic Magnetic Tunnel Junctions"

1

Borders, William A., Ahmed Z. Pervaiz, Shunsuke Fukami, Kerem Y. Camsari, Hideo Ohno, and Supriyo Datta. "Integer factorization using stochastic magnetic tunnel junctions." Nature 573, no. 7774 (September 18, 2019): 390–93. http://dx.doi.org/10.1038/s41586-019-1557-9.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Fukushima, Akio, Kay Yakushiji, Hitoshi Kubota, Hiroshi Imamura, and Shinji Yuasa. "Development of “spin dice” — A Scalable Random Number Generator Based on Spin-Torque Switching." SPIN 09, no. 03 (May 20, 2019): 1940009. http://dx.doi.org/10.1142/s2010324719400095.

Full text
Abstract:
We have developed a random-number-generator (RNG) named “spin dice,” which employs the stochastic nature of spin-torque switching (STS) in a magnetic tunnel junction. The principle of the idea is that the switching probability first tuned around 0.5 is varied linearly with the applied current. After that, the switching results are converted into binary random numbers. We fabricated several types of “spin dice” by combining magnetic tunnel junctions and single-board microcomputer, and achieved generation speed of random numbers up to several hundred kbit/sec. Because STS is scalable and magnetic tunnel junctions have compatibility to semiconductor fabrication process, “spin dice” can be considered as a promising candidate for truly random-number-generator (TRNG) for security applications.
APA, Harvard, Vancouver, ISO, and other styles
3

Safranski, Christopher, Jan Kaiser, Philip Trouilloud, Pouya Hashemi, Guohan Hu, and Jonathan Z. Sun. "Demonstration of Nanosecond Operation in Stochastic Magnetic Tunnel Junctions." Nano Letters 21, no. 5 (February 25, 2021): 2040–45. http://dx.doi.org/10.1021/acs.nanolett.0c04652.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Kobayashi, Keito, William A. Borders, Shun Kanai, Keisuke Hayakawa, Hideo Ohno, and Shunsuke Fukami. "Sigmoidal curves of stochastic magnetic tunnel junctions with perpendicular easy axis." Applied Physics Letters 119, no. 13 (September 27, 2021): 132406. http://dx.doi.org/10.1063/5.0065919.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Lv, Wenxing, Jialin Cai, Huayao Tu, Like Zhang, Rongxin Li, Zhe Yuan, Giovanni Finocchio, et al. "Stochastic artificial synapses based on nanoscale magnetic tunnel junction for neuromorphic applications." Applied Physics Letters 121, no. 23 (December 5, 2022): 232406. http://dx.doi.org/10.1063/5.0126392.

Full text
Abstract:
Bio-inspired neuromorphic computing has aroused great interest due to its potential to realize on-chip learning with bio-plausibility and energy efficiency. Realizing spike-timing-dependent plasticity (STDP) in synaptic electronics is critical toward bio-inspired neuromorphic computing systems. Here, we report on stochastic artificial synapses based on nanoscale magnetic tunnel junctions that can implement STDP harnessing stochastic magnetization switching. We further demonstrate that both the magnitude and the temporal requirements for STDP can be modulated via engineering the pre- and post-synaptic voltage pulses. Moreover, based on arrays of binary magnetic synapses, unsupervised learning can be realized for neuromorphic computing tasks such as pattern recognition with great computing accuracy and efficiency. Our study suggests a potential route toward on-chip neuromorphic computing systems.
APA, Harvard, Vancouver, ISO, and other styles
6

Chakraborty, Indranil, Amogh Agrawal, Akhilesh Jaiswal, Gopalakrishnan Srinivasan, and Kaushik Roy. "In situ unsupervised learning using stochastic switching in magneto-electric magnetic tunnel junctions." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 378, no. 2164 (December 23, 2019): 20190157. http://dx.doi.org/10.1098/rsta.2019.0157.

Full text
Abstract:
Spiking neural networks (SNNs) offer a bio-plausible and potentially power-efficient alternative to conventional deep learning. Although there has been progress towards implementing SNN functionalities in custom CMOS-based hardware using beyond Von Neumann architectures, the power-efficiency of the human brain has remained elusive. This has necessitated investigations of novel material systems which can efficiently mimic the functional units of SNNs, such as neurons and synapses. In this paper, we present a magnetoelectric–magnetic tunnel junction (ME-MTJ) device as a synapse. We arrange these synapses in a crossbar fashion and perform in situ unsupervised learning. We leverage the capacitive nature of write-ports in ME-MTJs, wherein by applying appropriately shaped voltage pulses across the write-port, the ME-MTJ can be switched in a probabilistic manner. We further exploit the sigmoidal switching characteristics of ME-MTJ to tune the synapses to follow the well-known spike timing-dependent plasticity (STDP) rule in a stochastic fashion. Finally, we use the stochastic STDP rule in ME-MTJ synapses to simulate a two-layered SNN to perform image classification tasks on a handwritten digit dataset. Thus, the capacitive write-port and the decoupled-nature of read-write path of ME-MTJs allow us to construct a transistor-less crossbar, suitable for energy-efficient implementation of in situ learning in SNNs. This article is part of the theme issue ‘Harmonizing energy-autonomous computing and intelligence’.
APA, Harvard, Vancouver, ISO, and other styles
7

Velarde, Humberto Inzunza, Jheel Nagaria, Zihan Yin, Ajey Jacob, and Akhilesh Jaiswal. "Intrinsic Spike-Timing-Dependent Plasticity in Stochastic Magnetic Tunnel Junctions Mediated by Heat Dynamics." IEEE Magnetics Letters 12 (2021): 1–5. http://dx.doi.org/10.1109/lmag.2021.3136154.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Debashis, Punyashloka, Hai Li, Dmitri Nikonov, and Ian Young. "Gaussian Random Number Generator With Reconfigurable Mean and Variance Using Stochastic Magnetic Tunnel Junctions." IEEE Magnetics Letters 13 (2022): 1–5. http://dx.doi.org/10.1109/lmag.2022.3152991.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Lee, Albert, Di Wu, and Kang L. Wang. "Torque Optimization for Voltage-Controlled Magnetic Tunnel Junctions as Memory and Stochastic Signal Generators." IEEE Magnetics Letters 10 (2019): 1–4. http://dx.doi.org/10.1109/lmag.2019.2944805.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Algarín, J. M., B. Ramaswamy, Y. J. Chen, I. N. Weinberg, I. N. Krivorotov, J. A. Katine, B. Shapiro, and E. Waks. "High rectification sensitivity of radiofrequency signal through adiabatic stochastic resonance in nanoscale magnetic tunnel junctions." Applied Physics Letters 115, no. 19 (November 4, 2019): 192402. http://dx.doi.org/10.1063/1.5123466.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "Stochastic Magnetic Tunnel Junctions"

1

Wong, Pak Kin. "Magnetic tunnel junctions." Thesis, University of Cambridge, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.624388.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Almasi, Hamid, and Hamid Almasi. "Perpendicular Magnetic Tunnel Junctions with MgO Tunnel Barrier." Diss., The University of Arizona, 2017. http://hdl.handle.net/10150/626332.

Full text
Abstract:
Spintronics discusses about fundamental physics and material science in mostly nanometer size structures. Spintronics also delivers many promising technologies for now and the future. One of the interesting spintronic structures is called “Magnetic Tunnel junction” (MTJ). A typical MTJ consists of a thin (1-3nm) insulator layer sandwiched between two ferromagnetic layers. In this work, I present MTJ with perpendicular magnetic anisotropy (PMA) using an MgO tunnel barrier. The effect of different heavy metals (HMs) adjacent to the ferromagnets (FMs) on tunneling magnetoresistance (TMR) and PMA of the junctions are discussed. Namely, Ta, Mo, Ta/Mo, W, Ir, and Hf have been utilized in HM/FM/MgO structures, and magneto-transport properties are explored. It is shown that when Ta/Mo is employed, TMR values as high as 208%, and highly thermally stable PMA can be obtained. Some physical explanation based on electronic band structure and thermochemical effects are discussed. In the last part of this work, the newly discovered tunneling anisotropic magnetoresistance (TAMR) effect in antiferromagnets is studied, and clear TAMR is demonstrated for NiFe/IrMn/MgO/Ta structures.
APA, Harvard, Vancouver, ISO, and other styles
3

Kaiser, Christian. "Novel materials for magnetic tunnel junctions." kostenfrei, 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=97561388X.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Eames, Matthew E. "The theory of magnetic tunnel junctions." Thesis, University of Exeter, 2007. http://hdl.handle.net/10036/38673.

Full text
Abstract:
Within this work an investigation into the tunnelling magnetoresistance (TMR) will be presented. A base numerical model is developed to describe the tunnelling through a magnetic tunnel junction (MTJ) so that a simple analytic model can be compared. These models have been extended to the crystalline barrier MTJs. This numerical model was based upon an enhanced Wentzel-Kramers-Brillouin (EWKB) method to describe the tunnelling current density. By correctly considering realistic MTJ parameters, the key result was found to be the correct handling of the effective masses in of the three MTJ layers. The extracted barrier-heights of 3.5-4eV is much higher than found previously and closer to the half band-gap result expected. It is then clear that the correct treatment of the parameters produces a far more realistic result. The key parameter which can be extracted from the I-V characteristics is the product b m*d V , where m* is the effective mass of the barrier, d is the effective barrier thickness and Vb is the effective barrier height. The analytic solution is a transparent model in which the key material parameters are visible and simple enough to be applied by experimental researchers to MTJs. The accurate modelling of both the prefactor and exponent are crucial to estimating the TMR. A simplified analytic result was produced that is in good agreement with numerical and experimental results. The numerical and analytic model are then extended to describe the TMR through a crystalline Fe(001)/MgO(001)/Fe(001) trilayer system. The calculation is based on the free-electron-like numerical solution providing a functional dependence of the TMR. The results were found to be in excellent agreement with the ab initio models and experiment. Furthermore a simplified analytic expression shows the TMR is dependent on the band-widths of the tunnelling electron states, the coupling and the thickness of the barrier. These models will be of great benefit to both experimental and theoretical researchers.
APA, Harvard, Vancouver, ISO, and other styles
5

Yu, Chak Chung Andrew. "Electron microscopy studies of magnetic tunnel junctions." Thesis, University of Oxford, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.302402.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Suszka, Anna Kinga. "Resonant spin transfer in magnetic tunnel junctions." Thesis, University of Leeds, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.493600.

Full text
Abstract:
Despite an extensive study and deep analysis of the tunnelling assisted transport the detailed processes that occur inside dielectrics are still unknown. The knowledge of these processes is crucial for the design and studies on future spintronic nanostructures. We propose a system of dusted MgO-based magnetic tunnel junctions to probe the processes inside the insulating barrier in order to gain more information about the physics of electron tunnelling.
APA, Harvard, Vancouver, ISO, and other styles
7

Kirk, Daniel James. "A TEM Study of Magnetic Tunnel Junctions and Magnetic Materials." Thesis, University of Oxford, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.491270.

Full text
Abstract:
Since 1995, magnetic tunnel junction structures have been of great commercial interest because of their use in magnetic recording and data storage applications. In addition, the complex way in which the properties of the junction are influenced by the microstructure makes these structures of great scientific interest. The development of the capabilities of devices based on these structures has also lead to new applications for various materials. In particular, amorphous ferromagnets have become popular choices for use as ferromagnetic layers in these structures. Since the properties of magnetic tunnel junctions are determined by structural features less than 1 nm in size, a technique capable of studying these junctions with very high resolution is needed. In this thesis tunnel junction structures with two different types of barrier material are studied using a variety of transmission electron microscopy techniques. The effects of processing conditions were investigated for both structures. Electron microscopy was also used to investigate the origins ofuniaxial magnetic anisotropy in an important amorphous ferromagnet. The TiOx barrier of IrMnlCoFeffiOx/CoFe tunnel junctions formed by radical oxidation was found to be amorphous and its thickness highly dependent on oxidation time. Increased oxidation times led to the formation of oxides of Co and Fe from the lower ferromagnetic layer. Annealing was shown to have little effect on barrier thickness but does lead to diffusion of Mn to the barrier. Mn was observed to reduce oxides of Co and Fe and form MnOx in the barrier. In a study of PtMnlCoFe/AIOxfNiFe junctions, in which the barrier was formed by natural oxidation, the amorphous AIOx barrier width was found to be independent of oxidation time. The increase in the magnetoresistance of the higher oxidation time junctions was attributed to an increase in the barrier height of the oxide. In addition, evidence of oxidation of the ferromagnetic layers was found in a sample which had not been annealed. Magnetic anisotropy, induced by in-field annealing, was measured in amorphous CoFeB thin films and these films were then studied by electron diffraction to examine the short range order in this material. G(r) was obtained for directions parallel and perpendicular to the easy axis of magnetisation. No bond-length anisotropy was observed and an upper limit for the magnitude of the pair-ordering effect on the coordination of the transition metal and metalloid atoms was established.
APA, Harvard, Vancouver, ISO, and other styles
8

Kugler, Zoe [Verfasser]. "Perpendicular anisotropy in magnetic tunnel junctions / Zoe Kugler." Bielefeld : Universitätsbibliothek Bielefeld, Hochschulschriften, 2012. http://d-nb.info/1023862891/34.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Anderson, Graham Ian Robert. "The effects of annealling on magnetic tunnel junctions." Thesis, University of Leeds, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.485761.

Full text
Abstract:
Magnetic tunnel junctions (MTJs) have come to the technological fore in recent times due to their high applicability to recording media, and the wealth of information that can be obtained in understanding spin-polarised tunnelling phenomena. In 1997 it was first reported that performing a high-vacuum annealling step on MTJs significantly increased tunnelling magnetoresistance (TMR), the figure-of-merit in these devices. Since then research has continued apace into both understanding this increase and determining how to maximise TlvlR via annealling. Recently the annealling step has taken an even larger role in MgO based MTJs, as it is integral in creating the interfaces needed to obtain giant TMR. This thesis contains work based on annealling MTJs using two techniques that have previously not been used to study annealling, despite being highly applicable. The first technique is in situ transport measurements during annealling, which can be used to determine the barrier profile throughout the anneal process. The second technique is soft X-ray resonant magnetic scattering (SXRMS) which has two advantages; firstly, using the incoming X-rays tuned to an absorption edge, buried .interfaces can be probed and, secondly, by switching the photon helicity, magnetic properties of these interfaces can be monitored. The first study comprises the development of MgO plasma oxidised MTJs and uses in situ transport measurements to show that during annealling the Mn moves to the barrier interfaces, which affects the sample performance. The second and third studies use in situ transport in conjunction with SXRMS. One study investIgates the barrier evolution and interface sharpness during the anneal using AIO based MTJs. This shows that the improvement of the barrier quality appears to playa larger role than improving the magnetic interfaces. Lastly; CoFeBjMgOjCoFeB MTJs are measured by both techniques as they are annealed at various temperatures around the CoFeB crystallisation temperature. Upon annealling at 200°C the barrier quality is improved and TMR increases. Annealling at temperatures above this does not im;prove the barrier but causes part-crystallisation of the CoFeB causing a large increase in TMR. SXRMS results showed conflicting results depending upon the cumulative anneal process. These results were modelled qualitatively to understand the crystallisation/ diffusion behaviour seen in the MTJ.
APA, Harvard, Vancouver, ISO, and other styles
10

Romero, Dominguez Saul. "Noise and electrical characterization in magnetic tunnel junctions." Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611223.

Full text
APA, Harvard, Vancouver, ISO, and other styles
More sources

Books on the topic "Stochastic Magnetic Tunnel Junctions"

1

Weides, M. P. Barriers in Josephson Junctions: An Overview. Edited by A. V. Narlikar. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780198738169.013.15.

Full text
Abstract:
This article considers Josephson junction barriers, focusing on barriers made from insulators, metals, semiconductors, magnets, and nanowires. The main characteristic of Josephson junctions is the local reduction or even suppression of the critical current in the barrier. These barriers affect the static and dynamics properties of Josephson junctions, including coupling strength, ground state, phase damping, and tunability of the critical current. The article first provides an overview of the fundamental physics of Josephson junctions, with particular emphasis on the Josephson effect, before describing the properties of two coupled superconductors. It then discusses tunnel barriers, metallic barriers, semiconducting barriers, and magnetic barriers.
APA, Harvard, Vancouver, ISO, and other styles
2

Ansermet, J. Ph. Spintronics with metallic nanowires. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.3.

Full text
Abstract:
This article focuses on spintronics with metallic nanowires. It begins with a review of the highlights of spintronics research, paying attention to the very important developments accomplished with tunnel junctions. It then considers the effect of current on magnetization before discussing spin diffusion and especially spin-dependent conductivities, spin-diffusion lengths, and spin accumulation. It also examines models for spin-polarized currents acting on magnetization, current-induced magnetization switching, and current-driven magnetic excitations. It concludes with an overview of resonant-current excitations, with emphasis on spin-valves and tunnel junctions as well as resonant excitation of spin-waves, domain walls and vortices. In addition, the article reflects on the future of spintronics, citing in particular the potential of the spin Hall effect as the method of generating spin accumulation, free of charge accumulation.
APA, Harvard, Vancouver, ISO, and other styles

Book chapters on the topic "Stochastic Magnetic Tunnel Junctions"

1

Vincent, Adrien F., Nicolas Locatelli, and Damien Querlioz. "Reinterpretation of Magnetic Tunnel Junctions as Stochastic Memristive Devices." In Cognitive Systems Monographs, 81–107. New Delhi: Springer India, 2017. http://dx.doi.org/10.1007/978-81-322-3703-7_5.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Reiss, Günter, Jan Schmalhorst, Andre Thomas, Andreas Hütten, and Shinji Yuasa. "Magnetic Tunnel Junctions." In Springer Tracts in Modern Physics, 291–333. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-73462-8_6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Reiss, Günter, Hubert Brückl, Jan Schmalhorst, and Andy Thomas. "Stability of Magnetic Tunnel Junctions." In Nanostructured Magnetic Materials and Their Applications, 91–110. Berlin, Heidelberg: Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/3-540-36872-8_6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Brückl, Hubert, Andy Thomas, Jörg Schotter, Jan Bornemeier, and Günter Reiss. "New Developments with Magnetic Tunnel Junctions." In Advances in Solid State Physics, 397–412. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/978-3-540-44838-9_28.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Mitani, Seiji. "Magnetic Tunnel Junctions Using Heusler Alloys." In Heusler Alloys, 401–12. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-21449-8_17.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Bandyopadhyay, Supriyo. "Non-volatile Memory Implemented with Straintronic Magnetic Tunnel Junctions." In Magnetic Straintronics, 37–51. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-20683-2_5.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Chudnovskiy, Alexander, Jacek Swiebodzinski, Alex Kamenev, Thomas Dunn, and Daniela Pfannkuche. "Charge and Spin Noise in Magnetic Tunnel Junctions." In Quantum Materials, Lateral Semiconductor Nanostructures, Hybrid Systems and Nanocrystals, 373–94. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-10553-1_15.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Zand, Ramtin, Arman Roohi, and Ronald F. DeMara. "Fundamentals, Modeling, and Application of Magnetic Tunnel Junctions." In Nanoscale Devices, 337–68. Boca Raton : Taylor & Francis, a CRC title, part of the Taylor & Francis imprint, a member of the Taylor & Francis Group, the academic division of T&F Informa, plc, 2019.: CRC Press, 2018. http://dx.doi.org/10.1201/9781315163116-15.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Batlle, X., B. J. Hattink, A. Labarta, B. J. Jonsson-Akerman, R. Escudero, and I. K. Schuller. "XPS Analysis of Thin Insulating Barriers in Magnetic Tunnel Junctions." In Magnetic Storage Systems Beyond 2000, 537–40. Dordrecht: Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-010-0624-8_49.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Alzate, Juan G., Pedram Khalili Amiri, and Kang L. Wang. "Magnetic Tunnel Junctions and Their Applications in Nonvolatile Circuits." In Handbook of Spintronics, 1–36. Dordrecht: Springer Netherlands, 2015. http://dx.doi.org/10.1007/978-94-007-7604-3_42-1.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Stochastic Magnetic Tunnel Junctions"

1

Sengupta, Abhronil, Gopalakrishnan Srinivasan, Deboleena Roy, and Kaushik Roy. "Stochastic Inference and Learning Enabled by Magnetic Tunnel Junctions." In 2018 IEEE International Electron Devices Meeting (IEDM). IEEE, 2018. http://dx.doi.org/10.1109/iedm.2018.8614616.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Vincent, A. F., N. Locatelli, J. Larroque, W. Zhao, J. Klein, S. Galdin-Retailleau, and D. Querlioz. "Stochastic Memristive Synapses from Spin-Transfer Torque Magnetic Tunnel Junctions." In 2015 IEEE International Magnetics Conference (INTERMAG). IEEE, 2015. http://dx.doi.org/10.1109/intmag.2015.7156498.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Liyanagedera, Chamika M., Parami Wijesinghe, Akhilesh Jaiswal, and Kaushik Roy. "Image segmentation with stochastic magnetic tunnel junctions and spiking neurons." In 2017 International Joint Conference on Neural Networks (IJCNN). IEEE, 2017. http://dx.doi.org/10.1109/ijcnn.2017.7966155.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Lv, Yang, and Jian-Ping Wang. "A single magnetic-tunnel-junction stochastic computing unit." In 2017 IEEE International Electron Devices Meeting (IEDM). IEEE, 2017. http://dx.doi.org/10.1109/iedm.2017.8268504.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Onizawa, Naoya, Daisaku Katagiri, Warren J. Gross, and Takahiro Hanyu. "Analog-to-stochastic converter using magnetic-tunnel junction devices." In the 2014 IEEE/ACM International Symposium. New York, New York, USA: ACM Press, 2014. http://dx.doi.org/10.1145/2770287.2770303.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Onizawa, Naoya, Daisaku Katagiri, Warren J. Gross, and Takahiro Hanyu. "Analog-to-stochastic converter using magnetic-tunnel junction devices." In 2014 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH). IEEE, 2014. http://dx.doi.org/10.1109/nanoarch.2014.6880490.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

de Barros Naviner, Lirida Alves, Hao Cai, You Wang, Weisheng Zhao, and Arwa Ben Dhia. "Stochastic computation with Spin Torque Transfer Magnetic Tunnel Junction." In 2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS). IEEE, 2015. http://dx.doi.org/10.1109/newcas.2015.7182031.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Srinivasan, Gopalakrishnan, Abhronil Sengupta, and Kaushik Roy. "Magnetic tunnel junction enabled all-spin stochastic spiking neural network." In 2017 Design, Automation & Test in Europe Conference & Exhibition (DATE). IEEE, 2017. http://dx.doi.org/10.23919/date.2017.7927045.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Zhang, Deming, Lang Zeng, Fanghui Gong, Tianqi Gao, Shaolong Gao, Youguang Zhang, and Weisheng Zhao. "Realization of neural coding by stochastic switching of magnetic tunnel junction." In 2015 15th Non-Volatile Memory Technology Symposium (NVMTS). IEEE, 2015. http://dx.doi.org/10.1109/nvmts.2015.7457499.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Kil, G. H., J. T. Choi, C. M. Choi, H. Sukegawa, S. Mitani, and Y. H. Song. "Stochastic Model for SPICE simulation about Resistance Distribution of Magnetic Tunnel Junction." In 2014 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2014. http://dx.doi.org/10.7567/ssdm.2014.ps-4-10.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "Stochastic Magnetic Tunnel Junctions"

1

Baker, Bryan John. A Model for the Behavior of Magnetic Tunnel Junctions. Office of Scientific and Technical Information (OSTI), January 2003. http://dx.doi.org/10.2172/816449.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'Stochastic Magnetic Tunnel Junctions' for particular source types:
Journal articles Dissertations / Theses
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography